JP4014913B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP4014913B2
JP4014913B2 JP2002104435A JP2002104435A JP4014913B2 JP 4014913 B2 JP4014913 B2 JP 4014913B2 JP 2002104435 A JP2002104435 A JP 2002104435A JP 2002104435 A JP2002104435 A JP 2002104435A JP 4014913 B2 JP4014913 B2 JP 4014913B2
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Japan
Prior art keywords
semiconductor layer
film
forming
insulating film
impurity
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Expired - Fee Related
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JP2002104435A
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English (en)
Japanese (ja)
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JP2003045858A (ja
JP2003045858A5 (cg-RX-API-DMAC7.html
Inventor
茂則 早川
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2002104435A priority Critical patent/JP4014913B2/ja
Publication of JP2003045858A publication Critical patent/JP2003045858A/ja
Publication of JP2003045858A5 publication Critical patent/JP2003045858A5/ja
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  • Liquid Crystal (AREA)
  • Drying Of Semiconductors (AREA)
  • Thin Film Transistor (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2002104435A 2001-04-13 2002-04-05 半導体装置の作製方法 Expired - Fee Related JP4014913B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002104435A JP4014913B2 (ja) 2001-04-13 2002-04-05 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2001116208 2001-04-13
JP2001-116208 2001-04-13
JP2002104435A JP4014913B2 (ja) 2001-04-13 2002-04-05 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2003045858A JP2003045858A (ja) 2003-02-14
JP2003045858A5 JP2003045858A5 (cg-RX-API-DMAC7.html) 2005-09-02
JP4014913B2 true JP4014913B2 (ja) 2007-11-28

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JP2002104435A Expired - Fee Related JP4014913B2 (ja) 2001-04-13 2002-04-05 半導体装置の作製方法

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JP (1) JP4014913B2 (cg-RX-API-DMAC7.html)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4526857B2 (ja) * 2004-04-12 2010-08-18 パナソニック株式会社 レジスト除去能力の評価方法及び電子デバイスの製造方法
TWI473149B (zh) * 2006-04-26 2015-02-11 Advanced Tech Materials 半導體製程系統之清潔
CN101743629B (zh) 2007-07-17 2012-06-13 夏普株式会社 具备薄膜晶体管的半导体装置及其制造方法
TWI494975B (zh) 2008-02-11 2015-08-01 Advanced Tech Materials 在半導體處理系統中離子源之清洗
JP2015008235A (ja) 2013-06-25 2015-01-15 富士電機株式会社 半導体装置の製造方法

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JP2003045858A (ja) 2003-02-14

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