JP4012705B2 - Sample holder and charged particle beam apparatus using the same - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a sample analysis method, and more particularly, to a method for analyzing a sample such as a semiconductor or an electronic device material, and a sample holder used for the analysis.
[0002]
[Prior art]
In order to find a fault location of an LSI or a fault location that restricts operating characteristics, it is necessary to directly measure the potential inside the LSI. In addition, it is necessary to elucidate the cause of failure at the found location. First, in order to find a faulty part, conventionally, a thin metal probe is contacted with an internal wiring while observing with an optical microscope, and a waveform is observed with a connected oscilloscope to measure a voltage. In this case, not only skill is required for operation, but the LSI may be broken in some cases. There is also a method of detecting a light emission location with a positional accuracy of 1 μm or less and determining a failure location using emission microscopy. Furthermore, as another conventional technique, the potential contrast reflecting the potential distribution on the sample surface of the scanning electron microscope is used, the electron beam is used as a probe for potential measurement, the target wiring is irradiated with the beam, and the potential waveform is sampled. There are electron beam testers that test the electrical characteristics of LSIs. In any of the above cases, only the failure location and the location that restricts the operation characteristics are determined.
[0003]
Therefore, when the analysis location is determined by the above-described conventional technique, the specific analysis location is then enlarged at a higher magnification by using a focused ion beam (FIB) method or a scanning electron microscope (SEM) method. I was observing. When the analysis location is not on the surface, or when the cause of the failure cannot be grasped without observing the cross section, the cross section is processed using FIB so that the cross section appears on the surface, and observed with SEM or FIB. When observation with higher resolution than SEM or FIB is required, a thin sample is obtained by separating a small sample at a specific location from the sample substrate by FIB irradiation and sample transporting means, as described in Japanese Patent Application Laid-Open No. 11-135051. Were observed by a transmission electron microscope (TEM) method.
[0004]
[Problems to be solved by the invention]
In the above prior art, since an optical microscope is used, the resolution is low, and no consideration is given to the correspondence to the wiring whose LSI design dimension is about 0.1 μm. The other observation methods described above only detect the potential fault location inside the LSI and cannot directly observe the operation and structural change of the fault location. Moreover, the point of observing directly the operation | movement of a normal location is not considered.
In the above-mentioned other conventional technology, after the analysis location is specified, the specific location is searched for and observed with a device for morphological observation. When cross-sectional observation is necessary, the specific location is taken out and processed into a thin film. Although it was observed, no consideration was given to the direct observation of the phenomenon occurring in the device while applying a voltage to the microscopic part of the sample.
[0005]
The object of the present invention is to extract a specific portion inside a sample such as an LSI having a design dimension of about 0.1 μm, which has been difficult with the prior art, and use it as a TEM sample. It is an object of the present invention to provide a sample analysis method capable of observing changes in a device, for example, changes in the crystal structure of a metal used for wiring, measurement of withstand voltage of an insulating film when a voltage is applied, and changes due to voltage. Another object of the present invention is to provide a sample analysis method capable of detecting a potential failure point by directly wiring a minute part inside a sample such as LSI and directly measuring a current when a voltage is applied. It is in. Still another object of the present invention is to provide a sample holder that can be directly wired to a minute portion inside a sample such as an LSI and apply a voltage.
[0006]
[Means for Solving the Problems]
The above object is achieved by the following means.
The sample holder according to the present invention includes means for holding the sample stage to which the sample is attached, and is mounted in the charged particle beam apparatus so that the sample attached to the sample stage is positioned on the optical axis of the charged particle beam apparatus. The sample holder is characterized by having a pair of fine conductors that can freely move the tip for applying a voltage to a predetermined portion of the sample.
[0007]
The sample holder includes a pair of conductors that are connected to an external power source through the shaft portion of the sample holder, and a means for detachably connecting the pair of fine conductors to the ends of the pair of conductors. Can do.
In order to increase the degree of freedom of movement of the tip, it is preferable that a part of the fine conductor is coiled.
[0008]
The sample analysis method according to the present invention is capable of energizing a pair of fine conductors to a predetermined portion of a micro sample piece fixed to the sample holder, a step of extracting the micro sample piece from the sample, a step of fixing the micro sample piece to the sample holder, And a step of applying a voltage to a pair of fine conductors, and a step of measuring a current flowing through a pair of fine conductors to a predetermined location of a micro sample piece.
[0009]
The sample analysis method according to the present invention also includes a step of extracting a micro sample piece from the sample, a step of fixing the micro sample piece to the sample holder, and a pair of fine conductors at predetermined positions of the micro sample piece fixed to the sample holder. A step of attaching the sample to the charged particle beam apparatus, a step of attaching the sample holder to which the minute sample piece to which the pair of fine conductors are attached is fixed, and a voltage to a predetermined portion of the minute sample piece via the pair of fine conductors. And a step of observing the predetermined portion of the micro sample piece with a charged particle beam device while applying a voltage.
[0010]
The step of extracting the minute sample piece from the sample may be a step of extracting the minute sample piece from the sample by processing using a focused ion beam, or a step of extracting the minute sample piece from the sample by machining. Also good.
The charged particle beam apparatus can be a transmission electron microscope. In this case, an electron beam transmission image at a predetermined location can be observed while applying a voltage to a predetermined location on a micro sample piece via a fine conducting wire. Phenomena generated by applying a voltage can be observed in real time.
[0011]
The step of attaching a pair of fine conductors to a small sample piece so as to be energized includes a step of finely processing the tip of the fine conductor or the tip of the chip fixed to the fine conductor with a focused ion beam, and a finely processed fine conductor or The step of moving the tip of the chip to a predetermined position on the micro sample piece and the step of fixing the finely processed fine conductor or the tip of the chip at a predetermined position on the micro sample piece can be included.
[0012]
The process of moving the tip of the finely processed fine wire or tip to a predetermined position on the micro sample piece is performed by beam assisting the tip of the manipulator capable of driving three axes (X, Y, Z) provided in the focused ion beam apparatus. The deposition can be performed by fixing the fine conductor or a part of the chip and moving the manipulator.
[0013]
In the sample analysis method according to the present invention, the tip of the manipulator capable of being driven in three axes (X, Y, Z) provided in the focused ion beam apparatus is used for the first fine lead or the first fine lead by beam assist deposition. Fixing to a part of the first chip fixed to the substrate, moving the manipulator to move the first fine conductor or the tip of the first chip to a predetermined position on the sample, and beam assist A step of attaching the first fine conductor or the tip of the first chip to a predetermined position in the sample by deposition, and a second fine conductor or a second fine conductor at a predetermined position in the sample by repeating the above steps. Attaching the tip of the second chip fixed to the substrate, applying a voltage between the first fine conductor and the second conductor, the first fine conductor and the second fine conductor. Wherein the via comprises a step of measuring the current flowing through the sample.
[0014]
DETAILED DESCRIPTION OF THE INVENTION
Embodiments of the present invention will be described below with reference to the drawings.
FIG. 1 is a schematic view showing an example of a focused ion beam (FIB) apparatus used in the present invention. The FIB apparatus 1 includes an ion gun 2, a condenser lens 3, a diaphragm 4, a deflector 5, an objective lens 6, a sample fine movement mechanism 7, a sample holder 8, and a secondary electron detector 9. A sample 11 is loaded in a sample holder 8 that is movable in three axis (X, Y, Z) directions and in which a sample loading unit can rotate. The movement of the sample 11 is performed by the sample fine movement mechanism 7 controlled by the fine movement control unit 12. A deflector 5 for deflecting and scanning the focused ion beam 10 incident on the sample 11 is disposed between the condenser lens 3 and the objective lens 6. The deflector 5 is controlled by a deflection signal control unit 15 that controls the machining area, and the deflection signal control unit 15 is connected to the CPU 16 in order to obtain beam position data.
[0015]
The ion beam 10 emitted from the ion gun 2 passes through the condenser lens 3 and the objective lens 6 and is converged on the sample 11 held by the sample holder 8. Secondary electrons generated from the sample 11 by the ion beam irradiation are detected by the secondary electron detector 9. The detection signal of the secondary electron detector 9 is amplified by the amplifier 13 and input to the monitor 14. The XY position signal on the screen of the monitor 14 is synchronized with the deflection control of the ion beam 10, and the brightness of the monitor 14 is modulated by the secondary electron intensity signal from the secondary electron detector 9. A scanning ion microscopy (SIM) image is displayed.
[0016]
As will be described later, two fine conducting wires are attached near the sample support portion of the sample holder 8 with the tip floating. A manipulator 20 that can move in three axis (X, Y, Z) directions is arranged in the sample chamber of the FIB apparatus 1, and the manipulator 20 is driven by the manipulator drive unit 21 under the control of the manipulator drive control unit 22. . As will be described later, the tip of the fine conductor is moved by fixing the manipulator 20 to the fine conductor and moving the manipulator 20. The manipulator 20 is fixed to the fine conducting wire by so-called ion beam assisted deposition in which a tungsten compound gas or a carbon compound gas is blown from the deposition gun 23 to react with the ion beam 10.
[0017]
FIG. 2 is a schematic configuration diagram of a tip portion of an example of a sample holder according to the present invention.
The sample holder 8 is used to mount a small sample piece extracted from a sample, and insert it into an FIB apparatus or another charged particle beam apparatus such as a transmission electron microscope for observation. Around the sample fixing portion of the sample holder 8, there is provided a groove 31 for placing fine conductive wires 30a and 30b made of tungsten, copper or the like having a thickness of about 5 to 10 μm. It is coated with an insulator to prevent grounding. Alternatively, instead of coating the inner wall of the groove 31 with an insulator, fine conductive wires 30a and 30b in which the tip and end portions are covered with an insulator may be used. Conductors 33a and 33b that are thicker than the fine conductors are passed through the tubes 32a and 32b provided in the shaft of the sample holder 8, and the fine conductors 30a and 30b are connected to the tips of the conductors 33a and 33b by screws 34a and 34b. Connected with. The other end portions of the conducting wires 33 a and 33 b are drawn out from the end portion of the sample holder 8. The inner walls of the tubes 32a and 32b are coated with an insulating material. The two fine conductive wires 30a and 30b can be moved freely at the tip, and a part thereof is coiled to increase the degree of freedom of movement of the tip. When the sample holder 8 is inserted into the charged particle beam device between the in-axis tubes 32a and 32b and the conducting wires 33a and 33b provided in the shaft of the sample holder 8, the charged particle beam device is in the sample chamber and the observation device chamber. In order to maintain a vacuum, O-rings 35a and 35b are arranged. Or between the tubes 32a and 32b in the shaft and the conducting wires 33a and 33b may be sealed with a resin or the like to keep airtight.
[0018]
FIG. 3 is a detailed view showing a structure for fixing the tips of the fine conductors 30a and 30b to the conductors 33a and 33b. 3A is a top view and FIG. 3B is a side view.
As shown in the drawing, the fine conductors 30a and 30b have a structure that can be detachably fixed to the ends of the conductors 33a and 33b, and can be exchanged. As the conducting wires 33a and 33b passing through the tubes 32a and 32b in the shaft of the sample holder 8, those having a diameter larger than that of the fine conducting wires 30a and 30b are used. The ends of the conducting wires 33a and 33b are divided into two parts, and have screws 24 at the bases divided into two parts. The ends of the conductors 33a and 33b are sandwiched in the gaps between the ends of the fine conductors 30a and 30b, and the ends are fixed by tightening the screws 34a and 34b to narrow the gap.
4A and 4B are schematic views of the sample holder 40 for fixing the sample stage to which the sample is attached to the sample holder 8. FIG. 4A is a diagram of the surface of the sample holder, and FIG. FIG. 4C is a top view of the sample holder, and FIG.
[0019]
The sample stage (see FIG. 9 and the like) to which the sample is attached bridges the annular sample stage receiving part 36 (see FIG. 2) which is lowered in a semi-disc shape near the central opening of the sample holder 8. The sample holder 40 is placed thereon and fixed thereon. The left and right ends 41 and 42 of the sample presser 40 and the peripheral portion 43 of the opening are tapered. The sample presser 40 is fixed to the sample holder 8 by a sample presser spring 38 (see FIG. 2). Specifically, the taper portion 41 of the sample presser 40 is inserted into the reverse taper portion 37 of the sample holder 8 shown in FIG. 2, and the sample presser spring 38 is moved to the set sample presser 40. The sample stage is fixed so as to be placed on the tapered portion 42. The portion where the sample holder 40 is in contact with the fine conductors 30a and 30b or the back surface 44 of the sample holder 40 is coated with an insulating material so that the fine conductors 30a and 30b are not grounded.
[0020]
In the sample in which the fine conducting wire is fixed by processing using the FIB apparatus, a current is measured by applying a voltage to the sample from the fine conducting wire, or a change in the state of the sample when the current is passed is observed. The measurement and observation of the sample can be continued in the FIB apparatus used to attach the fine conductor to the sample. Depending on the purpose of measurement and observation, the sample holder can be attached after the fine conductor is attached to the sample by the FIB apparatus. It can also be carried out by removing it from the FIB apparatus and mounting it on another charged particle beam apparatus such as a transmission electron microscope. The FIB apparatus 1 shown in FIG. 1 includes a voltage power supply 18 that applies a voltage to the conducting wires 33a and 33b drawn from the sample holder 8, and a voltage power supply control unit 19 that controls the voltage power supply. Measurement and observation can be continued by applying a voltage to the processed sample.
[0021]
FIG. 5 is a detailed view of a sample voltage application unit that applies a voltage to the sample via a fine conductor of a sample holder 8 mounted on a lens barrel 50 of a charged particle beam device such as an FIB device or a transmission electron microscope. The sample voltage application unit includes a sample holder 8, a voltage power source 18, and a voltage power source control unit 19. The minute sample piece is fixed in advance by a tungsten deposition film on, for example, a semi-disc-shaped sample stage attached to the sample holder 8. The sample stage is fixed to the sample holder 8 by a sample presser. The tip of two fine conductors is fixed to the minute sample piece by a tungsten deposition film. Terminal portions of the lead wires 33a and 33b drawn to the outside are connected to a voltage power source 18, and the voltage power source 18 is connected to a voltage power source control unit 19. The axis of the sample holder 8 is provided with an O-ring 51 around it in order to maintain a vacuum in the charged particle beam apparatus.
[0022]
Next, an example of the sample analysis method according to the present invention will be described step by step with reference to FIGS.
(A) A specific portion in the LSI sample 60 is observed with an optical microscope or the like in advance, and markings 61a to 61d are applied to the periphery using a laser marker (FIG. 6 (a)).
(B) The sample 60 is introduced into the FIB apparatus shown in FIG. The sample 60 is irradiated with the focused ion beam 10 and a SIM image due to the generated secondary electrons is observed. Using the markings 61a to 61d attached with the laser marker as a mark, a specific portion is searched for in the SIM image (FIG. 6B).
[0023]
(C) The groove 62 is processed with the focused ion beam 10 around a specific location (FIG. 6C).
(D) The manipulator 20 mounted in the FIB apparatus and operable in the X, Y, and Z directions is micro-sample including a specific portion with the tungsten (W) deposition film 71 using the beam assist deposition function also mounted in the FIB apparatus. Adhering to the end of the piece 72 (FIG. 7A).
[0024]
(E) The micro sample piece 72 is completely cut out from the original sample 60, and the whole manipulator 20 is lifted and retracted (FIG. 7B).
(F) A sample stage 80 for fixing the micro sample piece 72 is set on the sample holder 8 provided with the fine conducting wires 30a and 30b for voltage application, and is pressed and fixed by the sample presser 40 (FIG. 8). The sample holder 8 is introduced into the FIB apparatus. Chips 39a and 39b made of tungsten or the like are fixed to the tips of the fine conductors 30a and 30b, and the tips of the chips are processed in advance by the FIB 10 so as to have a diameter of about submicron. The chips 39a and 39b are not necessarily used. The shape of the sample stage 80 is a rectangular parallelepiped in the figure, but generally has a semi-disc shape that fits in the annular sample stage receiving part 36 (see FIG. 2) of the sample holder 8.
[0025]
(G) The manipulator 20 to which the minute sample piece 72 is bonded is moved, and the minute sample piece 72 is fixed to the sample stage 80 with the W deposition films 81a and 81b (FIG. 9A).
(H) The manipulator 20 is separated by the focused ion beam 10 (FIG. 9B).
(I) When a thin film is necessary, the sample micro-piece 72 is processed into a thin film with the focused ion beam 10 (FIG. 9C).
[0026]
(J) The manipulator 20 is brought into contact with the root portion of the tip 39a attached to the tip of the fine conducting wire 30a attached to the sample holder 8, and the manipulator 20 is bonded to the fine conducting wire 30a by the W deposition film 82 (FIG. 10 ( a)).
(K) The tip portion of the tip 39a is processed to a diameter of about 0.1 μm by the FIB 10 and sharpened. When the chip 12 is not used, the tip of the fine conductor 39a itself is processed to have a diameter of about 0.1 μm and sharpened (FIG. 10B).
[0027]
(L) The manipulator 20 is driven to bring the tip of the chip 39a of the fine conductor 30a into contact with the wiring in the micro sample piece 72, and the chip 39a and the wiring in the micro sample piece 72 are bonded by the W deposition film 83a. (FIG. 11A).
(M) The manipulator 20 is separated by the focused ion beam 10 (FIG. 11B).
(N) Similarly, the other fine conducting wire 30b is bonded to another wiring portion of the sample minute piece 72 by the W deposition film 83b (FIG. 11C). Thereafter, the manipulator 20 is separated from the fine conducting wire 30b using the focused ion beam 10.
Next, the micro sample piece 72 is transported together with the sample holder 8 to an observation device such as a transmission electron microscope, and the lead wires 33a and 33b to which the fine lead wires 30a and 30b are attached are connected to a voltage power source placed outside the device.
[0028]
(O) Thereafter, the voltage power source is controlled, voltage is applied to the wiring portion of the sample micro-piece 72 that is in contact with the fine conductors 30a and 30b, and the voltage is applied to the wiring portion in the sample piece 72 while measuring the current. The phenomenon that occurs is observed (FIG. 12).
For example, when a large current is passed through the metal wiring in the device, the metal atoms in the wiring move and are swept away by collision with electrons to generate cavities and cracks. This phenomenon is called migration, but the above method makes it possible to observe such a phenomenon in real time.
[0029]
An example will be described in which the sample 72 produced by the above method is inserted into a transmission electron microscope and the cross section is observed. FIG. 13 is a schematic diagram for explaining an example of a phenomenon observed by the method of the present invention. FIG. 13A is a cross-sectional observation example of a micro sample piece 90 having a metal wiring 91. The metal wiring 91 is covered with metal nitride films 92 and 93 for preventing migration. In the state where no voltage is applied, as shown in FIG. 13A, no cavities or cracks are observed in the wiring 91, the crystal grains 94 are observed, and inclusions are observed in the crystal grain boundaries 95. Not observed. Next, a current is passed through the wiring 91 of the sample 90, and the phenomenon of migration is observed. By passing a large current, the appearance of the cavities 96 and cracks is directly observed, and finally, as shown in FIG. 13B, the metal nitride film 93 is broken and the metal crystal grains 94 are melted and protruded. State changes and structural changes such as the generation of cavities 96 are observed in real time. In addition, the voltage dependency of the occurrence of migration is measured by changing the applied voltage. From the obtained results, it is possible to elucidate the mechanism of migration occurrence.
[0030]
In the observation example described above, the part specified by the optical microscope is extracted from the sample. However, in the FIB apparatus, detection of the failed part of the sample may be obtained by applying a voltage, and the part may be extracted. The method will be described with reference to FIG.
(A) The manipulator 20 is driven, the tip of the chip 39a attached to the fine conductor 30a is brought into contact with the wiring in the sample 100, and the chip 39a and the wiring in the sample 100 are bonded by the W deposition film 101 (FIG. 14 (a)).
(B) The manipulator 20 is separated from the tip 39a with a focused ion beam, and the tip 39b attached to the other fine conducting wire 30b is brought into contact with another wiring in the sample 100 in the same manner as in FIG. (FIG. 14B).
(C) The manipulator 20 is separated from the chip 39b with a focused ion beam, the voltage power supply 25 is controlled, and a voltage is applied to the contacted wiring part. The current is measured, the state of the sample 100 is observed, and the analysis location is determined.
[0031]
By the above operation, the sample 100 can be observed in a bulk state in a bulk state. Further, the determined analysis location can be extracted according to the process described with reference to FIGS. 6 and 7 and further observed from the cross-sectional direction.
Moreover, in the said Example, although the specific location was extracted and the voltage was applied to some extracted micro sample pieces, the process demonstrated in FIGS. 10-12 using the sample previously thinned by machining etc. According to the above, voltage may be applied to the sample wiring for observation.
[0032]
In the above example, the fine conductors 30a and 30b are attached to the sample holder 8. However, the fine conductors 30a and 30b may be attached in the vicinity of the sample piece arranged in the sample chamber of the FIB apparatus. FIG. 15 is a schematic view of the sample chamber of the FIB apparatus in which fine conductors for applying a voltage to the sample are provided in the sample chamber.
[0033]
This FIB apparatus is provided with two hollow ports 112 and 113 in the vicinity of a sample 111 mounted on the sample holder 110 and set in the sample chamber. Fine conducting wires 130a and 130b are arranged in the vicinity of the sample 111 through the insides of the hollow ports 112 and 113, respectively. In order to maintain the vacuum in the sample chamber 120 of the FIB apparatus, an O-ring 121 is disposed around the hollow ports 112 and 113 that penetrate the wall of the sample chamber 120. In the hollow ports 112 and 113, conductive wires having a diameter larger than that of the fine conductive wires 130a and 130b are arranged, and the fine conductive wires 130a and 130b are attached to and detached from the conductive wires in the hollow ports with the same structure as described in FIGS. Connected freely. The inner walls of the hollow ports 112 and 113 are coated with an insulator or the conductor is coated with an insulator to prevent a short circuit between the conductor and the hollow port. The distance between the tip portions of the ports 112 and 113 is determined so that the tip portions of the two fine conductive wires 130a and 130b coming out of the ports 112 and 113 can be easily bonded to the sample 111. The tip ends of the two fine conductive wires 130 a and 130 b are fixed to the micro wiring of the sample 111 by W deposition films using the W deposition gun 23 from both sides with respect to the cross section of the sample 111. A terminal portion of the lead wire drawn out of the FIB apparatus is connected to a voltage power source 118, and the voltage power source 118 is connected to a voltage power source control unit 119.
[0034]
In the above embodiment, the tip of the fine lead is made of the same material as the fine lead and has a conical tip with a diameter larger than that of the fine lead, and the tip of the tip is processed to a diameter of 0.1 microns or less with a focused ion beam. However, the tip of the fine conductor itself may be processed using a focused ion beam without using a conical tip.
[0035]
【The invention's effect】
According to the present invention, it is possible to directly observe a phenomenon generated in an actual device by applying a voltage by directly applying a voltage to a micro wiring portion of the device using a charged particle beam apparatus and observing the change. Thus, it becomes possible to elucidate the mechanism of failure occurrence due to voltage, and it becomes easier to elucidate the cause of failure.
[Brief description of the drawings]
FIG. 1 is a schematic view showing an example of a focused ion beam (FIB) apparatus used in the present invention.
FIG. 2 is a schematic configuration diagram of a tip portion of an example of a sample holder according to the present invention.
FIG. 3 is a detailed view showing a connection structure for fixing a tip portion of a fine conducting wire to the conducting wire.
FIG. 4 is a schematic view of a sample holder for fixing a sample stage to which a sample is attached to a sample holder.
FIG. 5 is a detailed view of a sample voltage application unit.
FIG. 6 is a diagram illustrating an example of a sample analysis method according to the present invention.
FIG. 7 is a diagram illustrating an example of a sample analysis method according to the present invention.
FIG. 8 is a schematic view of a sample holder on which a sample stage is set.
FIG. 9 is a diagram illustrating an example of a sample analysis method according to the present invention.
FIG. 10 is a diagram illustrating an example of a sample analysis method according to the present invention.
FIG. 11 is a diagram illustrating an example of a sample analysis method according to the present invention.
FIG. 12 is an explanatory diagram of a state in which a voltage is applied to the wiring portion of the sample micro-piece.
FIG. 13 is a schematic diagram illustrating an example of a phenomenon observed by the method of the present invention.
FIG. 14 is a diagram for explaining another example of the sample analysis method according to the present invention.
FIG. 15 is a schematic view of a sample chamber of an FIB apparatus in which fine conductors are provided in the sample chamber.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 ... FIB apparatus, 2 ... Ion gun, 3 ... Condenser lens, 4 ... Diaphragm, 5 ... Deflector, 6 ... Objective lens, 7 ... Sample fine movement mechanism, 8 ... Sample holder, 9 ... Secondary electron detector, 10 ... Focused ion beam, 11 ... sample, 12 ... fine movement control unit, 14 ... monitor, 15 ... deflection signal control unit, 16 ... CPU, 18 ... voltage power supply, 19 ... voltage power supply control unit, 20 ... manipulator, 21 ... manipulator drive unit 22 ... Manipulator drive control unit, 23 ... Deposition gun, 30a, 30b ... Fine conductor, 31 ... Groove, 32a, 32b ... Tube, 33a, 33b ... Conductor, 36 ... Sample holder, 38 ... Sample holding spring, 39a, 39b ... chip, 40 ... sample presser, 41,42 ... tapered portion, 60 ... LSI sample, 61a to 61d ... marking, 72 ... micro sample piece, 80 ... sample stage, 9 ... micro sample piece, 91 ... metal wiring, 92 and 93 ... metal nitride film, 94 ... crystal grains, 95 ... grain boundary, 96 ... cavity, 100 ... sample, 110 ... sample holder, 111 ... sample

Claims (2)

In a sample holder equipped with a means for holding a sample stage to which a sample is attached, and mounted in the charged particle beam apparatus so that the sample attached to the sample stage is positioned on the optical axis of the charged particle beam apparatus,
A pair of fine conductors that can freely move the tip for applying a voltage to a predetermined portion of the sample, and a pair of conductors connected to an external power source, and ends of the pair of conductors are the pair of conductors Removably connected to the fine conductors, the conductors are respectively disposed in a pair of tubes provided in the sample holder, the fine conductors are disposed in a pair of grooves provided in the sample holder, and the tip In order to increase the degree of freedom of movement, a part of the fine conductor is coiled.   A charged particle beam apparatus capable of mounting the sample holder according to claim 1.

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