JP2007212202A - Sample evaluation device and method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To evaluate the device sample formed into a thin film in a transmission electron microscope by applying voltage to the device sample to turn the device sample ready to operate. <P>SOLUTION: A plurality of probes are provided in a focused ion beam device and voltage is freely applied across the probes. Further, a detector for measuring the current between the probes to determine the presence of the current is provide. The probes are brought into contact with the contact plug of a semiconductor device, a deposition gas is introduced into the device, the contact position of the probes is irradiated with a focused ion beam to bond the probes to the contact plug to form a current introducing terminal. The current introducing mechanism brought into contact with the current introducing terminal to apply voltage to the current introducing terminal from outside of the electron microscope is provided to the sample holder of the electron microscope. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a sample preparation apparatus and a preparation method for observing a semiconductor device and other various electronic devices while applying a voltage.

  A conventional electron microscope sample preparation apparatus will be described with reference to FIGS. Electron microscope sample preparation methods include several techniques depending on the sample type and purpose, such as a method using electrolytic polishing, a mechanical polishing method using polishing powder and a polishing plate, and an ion beam processing method. In recent semiconductor device analysis and the like, a method of accelerating ions such as gallium and converging them to a diameter of several tens of nanometers with an electromagnetic lens and processing by a sputtering effect has been widely adopted. As an apparatus, it is widely marketed as a focused ion beam (FIB) apparatus. This application will also be described based on this FIB technology.

  FIG. 2 shows a configuration of a conventional FIB apparatus (Patent Document 1). The semiconductor wafer 101 is fixed on the sample stage 102 and is moved in the wafer plane direction by the sample position controller 103. On the other hand, the ion beam 104 emitted from the ion source is converged by the ion beam optical system 105 and converged on the semiconductor wafer 101. The ion beam optical system 105 has a scanning coil, and can be scanned two-dimensionally in the wafer surface direction by the ion beam optical system controller 107. In other words, by using both the scanning of the ion beam 104 and the sample position control device 103, a target region on the wafer 101 can be irradiated two-dimensionally with an ion beam having a diameter of several tens of nm. The ion beam 104 excites secondary electrons in the sample. Accordingly, the secondary electron detector 106 is provided in the vacuum vessel 111, and the secondary electron intensity is monitored on the central processing unit 111 in synchronization with the scanning position of the ion beam 104 via the secondary electron detector controller 108. Thus, the sample structure and the irradiation position of the ion beam 104 can be confirmed as a secondary electron image. Moreover, in order to take out the processed sample for an electron microscope, the microsampling method is utilized. Here, a probe 1001 in which tungsten is finely etched is introduced. The tip of the probe 1001 can contact the semiconductor wafer 101, and the position in the wafer surface is controlled by the probe drive mechanism 1001 'and the probe drive mechanism control device 1001' '. A deposition gas is widely used for bonding the probe 1001 and the processed sample. The vacuum container 111 is provided with a deposition gas source 109, and a deposition gas such as organic tungsten gas is introduced into the vacuum container 111. As the deposition gas, a gas that reacts and solidifies when irradiated with an ion beam is selected. The gas flow rate and the like can be controlled by the deposition gas source control device 110.

  Next, the details of the sample processing and handling process will be described with reference to FIG. In FIG. 3, (a, b) First, three rectangular holes 1102, 1103, 1104 are processed with FIB 1101 in the three-side directions around the desired cross section. (C) Next, by tilting the sample stage and performing the groove 1105 processing, the sample piece 1107 supported by the original sample only by the support portion 1106 can be produced. (D) Next, the inclination of the sample stage is restored, and the tip of the probe 1001 is brought into contact with the sample piece 1107 by the probe driving mechanism 1001 ′ and the probe control device 1001 ′ ′. Next, FIB 1101 is irradiated to the region including the probe tip while supplying the deposition gas 1108 from the deposition gas source 109, thereby forming (e) a deposition film 1109 (in this example, a W film). The sample piece 1107 and the probe 1001 can be fixed. Thereafter, the support portion 1106 is removed by FIB processing, whereby the sample piece can be separated from the original sample. (F, g) The sample piece 1107 thus separated is brought into contact with the sample carrier 1110 by driving the probe. (H) Therefore, the sample piece and the sample carrier are fixed by forming the deposition film 1111 on the contact portion by the same method as described above. (I) After that, the tip of the probe is FIB processed to separate the probe, and (j) the sample piece 1107 can be made independent.

  In sample handling using a probe, Patent Document 2 discloses a technique for cutting a probe adhered to a sample to the sample side for a certain length. In Patent Document 2, the sample (sample in this document) has a microscopic size of several tens of microns, whereas the size of the mesh (grid in this document) for fixing the sample is as large as 3 mm, which is small. It is difficult to fix the sample with high positional accuracy. For this reason, the probe that handles the sample (sample carrier in this document) is largely left on the sample side, so that the level of the probe and the mesh are aligned and the position accuracy for fixing the probe to the mesh is several tens of times. It is devised to be low. However, the purpose of this application is to facilitate sample handling. Therefore, only one probe is required, and the probe is not brought into contact with a position where a device such as a plug is electrically operated. It does not matter whether the probe is in electrical contact.

Japanese Patent No. 2774884

Japanese Patent Laid-Open No. 2005-3682

  In the conventional method, for example, as shown in FIG. 3 (j), the electron microscope sample is an isolated sample made into a thin film, and when the sample piece is introduced into the electron microscope and observed, the device remains stopped. It is. On the other hand, a semiconductor device is operated by applying a voltage to a plug, a gate, etc., and its characteristic evaluation needs to be performed more accurately in an operating state. For example, the shape of an ion implantation region called a dopant profile has a difference in shape between a static state immediately after ion implantation and a state in which a voltage is applied. In addition, when evaluating the resistance of the gate insulating film, it is necessary to perform the evaluation with an operating voltage applied between the substrate and the gate. Transmission electron microscopes have an extremely high spatial resolution of about 0.1 nm and have various analysis functions, so they are widely used in semiconductor device analysis. is doing. The purpose of this application is to apply a voltage to a thinned device sample in a transmission electron microscope to evaluate it in an operating state, and to solve the problem related to sample pretreatment.

An FIB apparatus is used for sample pretreatment. A probe function for contacting each section of the sample is introduced. In the processing region desired by the FIB, a plurality of probes are brought into contact with desired locations such as contact plugs, gates, and substrates, and the probes are separated. At this time, the probe is left with a predetermined length. A sample piece processed by FIB is placed on a sample holder, and the structure is provided with a function that allows a current to be introduced by being brought into contact with a probe that is attached to the sample piece and left uncut.
Preferably, a function for detecting a current from the probe and calculating a resistance value may be installed in the FIB apparatus in order to determine whether or not the probe is electrically contacted correctly.
More preferably, the above-mentioned sample holder is a holder that can be shared with an electron microscope, and the function of introducing an electric current by making contact with the probe left uncut on the above-mentioned sample piece can be applied to the holder or the electron microscope. A structure having a mechanism capable of introducing an electric current to the uncut probe may be used.

  A voltage is applied to various electronic devices including a semiconductor device, and the structure, composition, and electronic state can be measured with an electron microscope in an operating state.

  An embodiment of the present application will be described with reference to FIG. An example of improvement based on the FIB apparatus shown in FIG. 2 will be described. The semiconductor wafer 101 is fixed on the sample stage 102 and is moved in the wafer plane direction by the sample position controller 103. On the other hand, the ion beam 104 emitted from the ion source is converged by the ion beam optical system 105 and converged on the semiconductor wafer 101. The ion beam optical system 105 has a scanning coil, and can be scanned two-dimensionally in the wafer surface direction by the ion beam optical system controller 107. In other words, by using both the scanning of the ion beam 104 and the sample position control device 103, a target region on the wafer 101 can be irradiated two-dimensionally with an ion beam having a diameter of several tens of nm. The ion beam 104 excites secondary electrons in the sample. Accordingly, the secondary electron detector 106 is provided in the vacuum vessel 111, and the secondary electron intensity is monitored on the central processing unit 111 in synchronization with the scanning position of the ion beam 104 via the secondary electron detector controller 108. Thus, the sample structure and the irradiation position of the ion beam 104 can be confirmed as a secondary electron image. Moreover, in order to take out the processed sample for an electron microscope, the microsampling method is utilized. Here, a probe 1001 in which tungsten is finely etched is introduced. The tip of the probe 1001 can contact the semiconductor wafer 101, and the position in the wafer surface is controlled by the probe driving mechanism 1010 and the probe driving mechanism control apparatus 1011. A deposition gas is widely used for bonding the probe 1001 and the processed sample. The vacuum container 111 is provided with a deposition gas source 109, and a deposition gas such as organic tungsten gas is introduced into the vacuum container 111. As the deposition gas, a gas that reacts and solidifies when irradiated with an ion beam is selected. The gas flow rate and the like can be controlled by the deposition gas source control device 110.

  Further, in the present application, the probe B 1002, the probe B driving mechanism 1002 ′, the probe B control device 1002 ″, the probe C 1003, the probe C driving mechanism 1003 ′, the probe C control device 1003 ″, the probe current readout line 1004, and the substrate current readout. A line 1005 and a current control mechanism 1006 are provided. That is, in FIG. 1, the probe function of the same three systems is provided, and the target location on the wafer surface can be approached. Here, the probe mechanism has not only a function as a manipulator for carrying a sample but also a role of a current introduction mechanism. That is, each probe tip has a structure in which a current can be introduced by applying a voltage from the current control mechanism 1006 via the probe current readout line 1004. In addition, a structure is adopted in which a voltage can be applied to the substrate through a substrate current readout line 1005 to introduce a current. That is, in FIG. 1, a total of four independent current introduction mechanisms are provided. In particular, the three systems of probes are equivalent, and when more systems are required depending on the type of device, these are added in parallel.

  Next, details of the sample processing and handling process in the present application will be described with reference to FIG. The first half of the process is the same as the conventional example of FIG. 3, and FIG. 4 (a) is the same as FIG. 3 (d). That is, in FIG. 4, (a) the tip of the probe 1001 is brought into contact with the sample piece 1107 by the probe driving mechanism 1001 '. Next, while supplying the deposition gas 1108 from the deposition gas source 109, the FIB 1101 is irradiated to the region including the probe tip. Next, (b) the probe B driving mechanism 1002 ′ and the probe B control device 1002 ′ ′ bring the probe B 1002 into contact with the next predetermined position of the sample piece 1107 and supply the deposition gas 1108 in the same manner. FIB1101 irradiation is performed on the region including Thereby, the probe 1001 and the probe B1002 are fixed to the sample piece 1107. Therefore, (c) the FIB 1101 is irradiated in the middle of the probe B1002, and (d) it is cut off leaving a predetermined length. Similarly, (e) the same processing is performed on the probe C, so that three probes are fixed to the sample piece 1007. Next, (f) the sample piece can be separated from the original sample by removing the support portion 1106 by FIB processing. As a result, the sample piece 1107 is in a free state, and (g) it can be lifted by the probe 1001. Therefore, (h) the sample piece 1107 thus separated is brought into contact with the sample carrier 1110 by driving the probe. Therefore, the specimen piece and the sample carrier are fixed by forming the deposition film 1111 on the contact portion by the same method as described above.

  A method of bringing the shape of the sample into contact with each probe will be described with reference to FIG. FIG. 5 is a cross-sectional view of the electron microscope sample obtained in the step of FIG. That is, the semiconductor device sample is fixed on the sample carrier 1110 by the deposition film 1111. Here, a sample including a gate 1202, a source-side contact plug A1200, and a drain-side contact plug B1201 is extracted. A probe C1003 is fixed to the contact plug A1200 by a deposition film 1009, a probe 1001 is fixed to the contact plug B1201 by a deposition film 1009, and a probe 1001 is fixed to the gate 1202 by a deposition film 1009. The sample carrier 1110 is electrically connected to the substrate current readout line 1005. That is, a voltage is applied to the cross-sectional sample of FIG.

  In this embodiment, the wafer-shaped sample, that is, the semiconductor wafer 101 is described as the sample. However, the FIB apparatus includes a wafer-compatible apparatus and a chip-compatible apparatus cut into several centimeter squares. It is needless to say that the two examples are different only in the size of the sample, and the above-described embodiment is also applicable to the chip sample. Further, in order to observe the sample structure, a composite apparatus that can irradiate an electron beam in addition to an ion beam is commercially available, but this may be used as a base mirror. In addition, the timing of leaving the probe with respect to the sample piece may be before the sample piece is produced from the sample, during the production, or after being separated from the sample.

  Here, the probe material and the deposition gas material will be described. In the FIB apparatus, organic molybdenum, organic tungsten, organic copper gas, or the like is used for the tungsten probe. In the present application, since the main purpose is to make the probe contact with the target structure of the sample, more preferable electrical continuity can be achieved by devising a combination of the structure, the probe, and the material of the deposition gas. For example, in a semiconductor device, when the plug is tungsten, an organic tungsten deposition gas is used for the tungsten probe. When the target structure is a copper wiring, an organic copper gas is used for the copper probe and the deposition gas. The structure, probe, and deposition gas materials should be aligned as much as possible. Thereby, the contact resistance between the probe and the sample can be lowered. If the materials cannot be matched in this way, conventional molybdenum or tungsten can be used, but the resistance of the electrical path, such as a probe, is sufficient to apply a minute current / voltage to the sample. I want to lower it. For this reason, as a material selection, a material with low resistivity such as gold, silver, platinum, copper and the like that is difficult to oxidize is selected.

  FIG. 8 shows details of the current control mechanism 1006. Probe 1001, probe B1002, and probe C1003 are electrically connected to probe ammeter 2001 and probe power supply 2011, probe B ammeter 2002 and probe B power supply 2012, probe C ammeter 2003 and probe C power supply 2013 by probe current readout line 1004, respectively. It is connected. The sample carrier 1110 is electrically connected to the substrate ammeter 2004 and the substrate power supply 2014 via a substrate current readout line 1005. With this structure, a voltage can be applied to each probe and substrate independently. Also, the current generated by the potential difference between the probes can be read by each ammeter. The ammeter and the power source are controlled by a current / voltage processing device 2020, and each current and voltage value are monitored. For example, whether or not the probe is electrically correctly connected to the contact or gate can be determined from the resistance value calculated from these current and voltage values. For example, a Schottky junction is often formed between a metal and a semiconductor. The contact between the current and voltage is proportional, that is, ohmic contact is desired, but this can be detected by the current / voltage processing device 2020 and a pass sign can be sent to the central processing device 111 to enable automation of the machining process. It becomes. In addition, even when the evaluation is performed under a series of conditions in which the current and voltage values are changed in the electron microscope, the current and voltage conditions can be automatically recorded by the current-voltage processing device 2020, and the evaluation results of the electron microscope It is extremely useful for mapping.

  In this application, samples are evaluated with an electron microscope. A sample holder for introducing the processed sample into the electron microscope in FIG. 6 and an example of the electron microscope main body will be described with reference to FIG. 6A is a view of the sample holder 1505 as seen from the optical axis direction of the electron microscope, and FIG. 6B is a view of the sample holder 1505 as seen from the direction perpendicular to the optical axis of the electron microscope.

  In FIG. 6, the electron microscope sample described in FIG. 5 is fixed to the sample holder 1505. On the sample holder 1505, a sample stage 1500 is placed between the rotating pivots 1506. An inclined pivot 1507 is installed at the tip of the sample holder 1505. That is, the sample stage 1500 is rotated (tilted) about two axes around two pivots. The sample carrier 1110 is mechanically fixed on the sample stage 1500. Three probes, ie, a probe 1001, a probe B1002, and a probe C1003, extend from the sample. A probe contact member 1501 is electrically floated on the sample stage 1500 and fixed, and the three probes are also in contact with the probe contact member 1501 by fixing the sample carrier 1110 on the sample stage 1500. . The probe contact member 1501 is electrically connected to the sample holder terminal 1504 via a current introduction terminal 1502 and a current introduction line 1503. In this embodiment, there are four types of probe contact members 1501, current introduction terminals 1502, and current introduction lines 1503, one of which is electrically connected to the sample carrier 1110 via the sample stage 1500 and reads the substrate current. It is a structure that can. As described in the first embodiment, it is necessary to introduce four or more kinds of currents depending on the type of device. In this case, it is possible to cope with increasing the number of systems according to the purpose.

  FIG. 7 shows an example in which the sample holder 1505 shown in FIG. 6 is used and observed with a scanning transmission electron microscope. The primary electron beam 26 radiated from the electron gun 11 controlled by the electron gun control circuit 11 ′ is an irradiation lens 12, an irradiation lens control circuit 12 ′, a condenser diaphragm 13, a condenser diaphragm control circuit 13 ′, a deflection for correcting an axis deviation. 14, deflector control circuit 14 ′ for correcting axial deviation, aberration corrector 15, aberration corrector control circuit 15 ′, image shift deflector 16, image shift deflector control circuit 16 ′ and objective lens 18, objective lens The control circuit 18 ′ is used to converge and irradiate the thinned sample 24 on the sample holder 1505. Since the primary electron beam 26 is two-dimensionally scanned on the sample surface by the scanning deflector 17, the intensity of the transmitted electron beam 27 is detected by the electron detector 21, and the electron detector control circuit 21 'is operated. Thus, by displaying an image in synchronization with the scanning position, a transmission electron beam image having a contrast corresponding to the sample structure, composition, and electronic state can be displayed on the electron microscope control computer 23. The sample holder terminal 1504 is connected to a sample holder driving mechanism 1510 with a current introduction terminal. A sample holder driving mechanism 1510 with a current introduction terminal moves the sample holder 1505 in three directions of x, y, and z, and rotates (tilts) about two axes around the rotating pivot 1506 and the tilting pivot 1507. Furthermore, current / voltage can be supplied to the sample from outside the electron microscope (outside vacuum) via the sample holder terminal 1504. The sample holder driving mechanism 1510 with a current introduction terminal is controlled by the electron microscope control computer 23 via the sample holder driving mechanism control circuit 1510 ′ with a current introduction terminal, and the applied voltage / current value to the sample position and sample. Etc. are recorded.

  In this embodiment, an example of the configuration of a single electron microscope has been described. However, it is obvious that the present invention can also be achieved by a composite apparatus having an ion beam optical system and an electron beam optical system.

  In the first embodiment, the apparatus and method described in FIG. 1 are equipped with three sets of probes. However, the method shown in FIG. 4 includes a conventional set of probes, a probe driving mechanism, and a probe control apparatus. It can also be realized with a device having the same. The embodiment will be described below with reference to FIGS.

  The semiconductor wafer 101 is fixed on the sample stage 102 and is moved in the wafer plane direction by the sample position controller 103. On the other hand, the ion beam 104 emitted from the ion source is converged by the ion beam optical system 105 and converged on the semiconductor wafer 101. The ion beam optical system 105 has a scanning coil, and can be scanned two-dimensionally in the wafer surface direction by the ion beam optical system controller 107. In other words, by using both the scanning of the ion beam 104 and the sample position control device 103, a target region on the wafer 101 can be irradiated two-dimensionally with an ion beam having a diameter of several tens of nm. The ion beam 104 excites secondary electrons in the sample. Accordingly, the secondary electron detector 106 is provided in the vacuum vessel 111, and the secondary electron intensity is monitored on the central processing unit 111 in synchronization with the scanning position of the ion beam 104 via the secondary electron detector controller 108. Thus, the sample structure and the irradiation position of the ion beam 104 can be confirmed as a secondary electron image. Moreover, in order to take out the processed sample for an electron microscope, the microsampling method is utilized. Here, a probe 1001 in which tungsten is finely etched is introduced. The tip of the probe 1001 can contact the semiconductor wafer 101, and the position in the wafer surface is controlled by the probe drive mechanism 1001 'and the probe control device 1001' '. A deposition gas is widely used for bonding the probe 1001 and the processed sample. The vacuum container 111 is provided with a deposition gas source 109, and a deposition gas such as organic tungsten gas is introduced into the vacuum container 111. As the deposition gas, a gas that reacts and solidifies when irradiated with an ion beam is selected. The gas flow rate and the like can be controlled by the deposition gas source control device 110. In the present application, a probe current readout line 1004, a substrate current readout line 1005, and a current control mechanism 1006 are provided. Here, the probe mechanism has not only a function as a manipulator for carrying a sample but also a role of a current introduction mechanism. That is, each probe tip has a structure in which a current can be introduced by applying a voltage from the current control mechanism 1006 via the probe current readout line 1004. In addition, a structure is adopted in which a voltage can be applied to the substrate through a substrate current readout line 1005 to introduce a current.

  Next, details of the sample processing and handling process in the present application will be described with reference to FIG. That is, in FIG. 10, (a) the probe driving mechanism 1001 'brings the tip of the probe 1001 into contact with the sample piece 1107. Next, while supplying the deposition gas 1108 from the deposition gas source 109, the FIB 1101 is irradiated to the region including the probe tip. Thereby, the probe 1001 is fixed to the sample piece 1107. Therefore, (b) the FIB 1101 is irradiated in the middle of the probe 1001, and (c) it is cut off leaving a predetermined length. Thereby, the probe 1002 is formed. Next, the probe 1001 is moved to the next contact position, and the fixing process is performed as in (a). Then, (d) by irradiating the FIB 1101 again in the middle of the probe 1001, it is also cut away leaving a predetermined length. Thereby, the probe 1003 is formed. Next, (e) the probe 1001 is moved to the next contact position and fixed to the sample piece 1107. Here, the sample piece can be separated from the original sample by removing the support portion 1106 by FIB processing. As a result, the sample piece 1107 becomes free and can be lifted by the (f) probe 1001. Therefore, (h) the sample carrier 1110 is introduced instead of the semiconductor wafer, and the sample piece 1107 thus separated is brought into contact with the sample carrier 1110 by driving the probe. Therefore, the specimen piece and the sample carrier are fixed by forming the deposition film 1111 on the contact portion by the same method as described above. Finally, by irradiating the probe 1001 with the FIB 1101, an observation sample having the structure shown in FIG. 5 is formed.

  It can be used in the semiconductor industry such as semiconductor device evaluation and measurement, and in the measurement equipment industry such as electron microscope and ion beam equipment.

The figure which shows one Example of the focused ion beam apparatus of this application. The figure which shows the structure of the focused ion beam apparatus which processes the sample for conventional electron microscopes. The figure which shows the method of processing the sample for conventional electron microscopes. The figure which shows one Example of the method of processing the sample for electron microscopes of this application. The figure which shows one Example of a sample structure. The figure which shows one Example of the sample holder for electron microscopes. The figure which shows one Example of the electron microscope for evaluation. The figure which shows the detail of an electric current control mechanism structure. The figure which shows one Example of the focused ion beam apparatus of this application (in the case of 1 probe apparatus). The figure which shows one Example of the method of processing the sample for electron microscopes of this application (in the case of 1 probe apparatus).

Explanation of symbols

DESCRIPTION OF SYMBOLS 101 ... Semiconductor wafer, 102 ... Sample stand, 103 ... Sample position control apparatus,
104 ... Ion beam, 105 ... Ion beam optical system,
106 ... Secondary electron detector, 107 ... Ion beam optical system controller,
108 ... Secondary electron detector controller, 109 ... Deposition gas source,
110 ... deposition gas source control device, 111 ... central processing unit,
112 ... Vacuum container, 1001 ... Probe, 1001 '... Probe drive mechanism,
1001 '' ... probe control device, 1002 ... probe B,
1002 '... Probe B drive mechanism, 1002 "... Probe B control device,
1003 ... Probe C, 1003 '... Probe C drive mechanism,
1003 '' ... probe C controller, 1004 ... probe current readout line,
DESCRIPTION OF SYMBOLS 1005 ... Substrate current read-out line, 1006 ... Current control mechanism 1010 ... Probe drive mechanism, 1011 ... Probe control device 1101 ... FIB, 1102 ... Rectangular hole, 1103 ... Rectangular hole, 1104 ... Rectangular hole,
1105 ... groove, 1106 ... support part, 1107 ... sample piece, 1108 ... deposition gas,
DESCRIPTION OF SYMBOLS 1109 ... Deposition film | membrane, 1110 ... Sample carrier, 1111 ... Deposition film | membrane 1200 ... Contact plug A, 1201 ... Contact plug B, 1202 ... Gate 1500 ... Sample stand, 1501 ... Probe contact member, 1502 ... Current introduction terminal, 1503 ... Current introduction line, 1504 ... Sample holder terminal, 1505 ... Sample holder,
1506... Rotating pivot 1507. Inclined pivot 1510. Sample holder driving mechanism with current introduction terminal.
1510 '... Sample holder drive mechanism control circuit with current introduction terminal,
11 ... an electron gun, 11 '... an electron gun control circuit, 12 ... an irradiation lens,
12 '... irradiation lens control circuit, 13 ... condenser aperture,
13 ′… capacitor aperture control circuit, 14… deflection deflector,
14 '... Axis deviation correcting deflector control circuit, 15 ... Aberration corrector,
15 '... aberration correction device control circuit, 16 ... image shift deflector,
16 '... image shift deflector control circuit, 17 ... scanning deflector,
17 '... scanning deflector control circuit, 18 ... objective lens,
18 '... objective lens control circuit, 21 ... electron detector,
21 '... electron detector control circuit, 23 ... electron microscope control computer,
24 ... Thinned sample, 26 ... Primary electron beam, 27 ... Transmission electron beam 2001 ... Probe ammeter, 2002 ... Probe B ammeter,
2003 ... Probe C ammeter, 2004 ... Substrate ammeter,
2011 ... Probe power supply, 2012 ... Probe B power supply,
2013 ... Probe C power supply, 2014 ... Board power supply,
2020: Current voltage processing apparatus.

Claims (3)

An optical system for irradiating the sample with an ion beam;
A probe capable of extracting a sample piece separated by irradiating the sample with the ion beam;
A stage on which the sample piece is placed;
Means for attaching the probe and the sample piece;
The probe is fixed to a plurality of locations on the sample piece, and the tip of the probe is left on the sample piece by a desired length by irradiation with the ion beam,
The stage comprises means for introducing current into the plurality of uncut probes.
A sample preparation device, wherein the stage can be introduced into an electron microscope.   Means for irradiating the sample with an ion beam, means for detecting a secondary charged particle beam generated due to the irradiated ion beam and acquiring an image of the sample, and display means for displaying the image A sample evaluation apparatus comprising: at least two or more probes; drive means for driving the probes; and means for independently applying a current or voltage to the plurality of probes.   The sample is irradiated with an ion beam, a secondary charged particle beam generated due to the ion beam irradiation is detected to obtain an image of the sample, and a plurality of probes are applied to a desired portion of the sample. A sample evaluation method comprising applying a current or a voltage.

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