JP4489652B2 - Small sample table assembly - Google Patents

Description

  The present invention relates to a micro sample base assembly including a plurality of micro sample bases for fixing micro sample pieces for use in electron microscope observation.

  In order to observe a micro sample piece collected from a semiconductor wafer or semiconductor device with a transmission electron microscope (TEM), it is necessary to make the electron beam irradiation region (observation region) of the micro sample piece as thin as possible. As such a thinning technique, a flat sample stage is erected, and a small sample piece is fixed on the upper surface thereof, and is substantially parallel to the surface of the small sample piece, that is, substantially perpendicular to the upper surface of the sample stage. In addition, a technique for thinning a minute sample piece by irradiating a focused ion beam is known (for example, see Patent Document 1).

Japanese Patent Laying-Open No. 2003-35682 (5th page, FIG. 9)

  A micro sample table used as a work table for thinning is generally a consumable item that is not reused once it is used. For this reason, it is desirable to produce a large quantity of the same quality, and it is desirable to store and transport a plurality of samples in a batch until just before using the micro sample table. However, conventionally, it has not been considered to store and transport a plurality of micro sample tables together, and the handling has been complicated.

(1) The micro sample base assembly according to the invention of claim 1 is arranged in a two-dimensional manner by connecting micro sample bases for fixing a micro sample to be processed to each other in a plane of a flat plate-like material. a small sample stage that is, each of the micro sample stage has a multistage shape in the thickness direction, and a single base, arranged along the longitudinal direction of the base, most thick micro sample is fixed A plurality of thin fixing portions, and the fixing portions are formed of the same semiconductor material as that of the base portion and are spaced apart from adjacent fixing portions .
(2) The invention of claim 2 is the micro sample table assembly according to claim 1, wherein the flat plate-like material is a silicon wafer, and the stacking direction of the base portion and the fixing portion is the thickness direction of the silicon wafer. Each of the sample stands is formed in a multistage shape by a micromachining technique.
(3) The invention of claim 3 is the micro sample table assembly according to claim 2, wherein a plurality of columnar bodies in which a plurality of micro sample tables are connected to adjacent micro sample tables in the connecting portion are arranged , interstitial spaces having no silicon wafer between each column-like body is formed, both ends of each column-shaped bodies are characterized by having a connection portion to be connected to the peripheral portion of the silicon wafer.
(4) According to a fourth aspect of the present invention, in the micro sample table assembly according to the third aspect, the gap space between the respective rows is formed after the silicon wafer is diced in the thickness direction. The groove is formed by removing the groove by an etching process.
(5) The invention according to claim 5 is the micro sample table assembly according to claim 3 or 4, wherein the thickness in the thickness direction of the silicon wafer at the connecting portion connecting the micro sample tables forming the row-shaped body. And the thickness in the thickness direction of the silicon wafer at the connection portion connecting the row body to the peripheral edge of the silicon wafer is controlled by performing dicing and etching on the silicon wafer. To do.
(6) The invention of claim 6 is the micro sample table assembly according to any one of claims 3 to 5, wherein the connecting portion and the connecting portion are formed thinner than the height of the base portion. And
(7) The invention according to claim 7 is the micro sample table according to any one of claims 1 to 6, wherein the fixed table is provided on the uppermost stage of the projecting portion having a multistage shape, The projecting portions are arranged so as to be spaced apart from adjacent fixing portions along the longitudinal direction of the base portion.

According to the micro sample table assembly of the present invention, each of the plurality of micro sample tables having a plurality of fixed tables is two-dimensionally arranged in the plane of the plate-like material and connected to each other. Excellent transportation and convenience.

Hereinafter, a micro sample table and a micro sample table assembly according to an embodiment of the present invention will be described with reference to FIGS.
FIG. 1 is a diagram schematically showing a state in which a micro sample table according to an embodiment of the present invention is attached to a pedestal mesh, FIG. 1 (a) is a front view, and FIG. 1 (b) is a side view. . In FIG. 1, directions are represented by XYZ orthogonal coordinates. As shown in FIG. 1, the micro sample table 10 is attached to the surface of a substantially semicircular pedestal mesh 100. The micro sample stage 10 holds a flat micro sample piece S collected from a semiconductor wafer or a semiconductor device, and is used for transmission electron microscope (TEM) observation or Auger electron spectroscopy (AES). It is used as a workbench for performing S thinning preparation. Then, the micro sample table 10 is set in the microscope device or the spectroscopic device while holding the thin micro sample piece S at the time of microscopic observation or spectroscopic analysis.

  FIG. 2 is a perspective view schematically showing a single crystal silicon wafer on which a micro sample table assembly according to the embodiment is formed. The XYZ orthogonal coordinates in FIG. 2 correspond to the coordinates in FIG. The micro sample table assembly 50 is an assembly of the micro sample table 10 shown in FIG. 1, but in FIG. 2, the number of protrusions is omitted to three for convenience. As shown in FIG. 2, a plurality of minute sample bases 10 form a columnar body regularly arranged in a straight line in the X direction, and such columns are arranged in parallel in the Y direction across a space SP that penetrates in the Z direction. Are arranged regularly. That is, the plurality of micro sample tables 10 are connected to each other in a plane along the XY plane (horizontal plane) of the single crystal silicon wafer and are two-dimensionally distributed.

  The micro sample bases 10 are connected in series via a connecting rib 60, and one end of the micro sample base 10 located on the outermost side in each row is connected to the protrusion 70 a of the outer frame 70 via a connection rib 80. . Therefore, the micro sample table assembly 50 is supported by the outer frame 70. The micro sample table 10, the connecting rib 60, the outer frame 70, and the connecting rib 80 are all made of silicon, and are integrally manufactured from a single crystal silicon wafer described later. As will be described in detail later, the groove Y1 parallel to the Y direction is due to dicing for forming the connecting rib 60, and the outer groove Y2 parallel to the Y direction is for forming the connecting rib 80. This is due to dicing.

  FIG. 3 is a partial perspective view schematically showing the structure of the micro sample table assembly according to the embodiment. The XYZ orthogonal coordinates in FIG. 3 also correspond to the coordinates in FIGS. As shown in FIG. 3, the micro sample table 10 is connected in series via a connecting rib 60. As shown in FIG. 1 (b), it is symmetrical with respect to the center line SP, has a multi-stage structure having four steps in the vertical direction (Z direction), and the upper step has a thickness (length in the Y direction). Is thin. Further, when the minute sample stage 10 is viewed in the Y direction, the first stage 11 and the second stage 12 of the minute sample stage 10 are extended in the X direction, but the second stage consisting of the third stage and the fourth stage. Are separated into five, and the five projecting portions respectively constituted by the third stage 13 to 53 and the fourth stage 14 to 54 are arranged in the X direction and are separated from the upper surface of the second stage 12 by Z. Projected in the direction. The protruding portions 1 to 5 including the third step and the fourth step have the same height (length in the Z direction) and thickness (length in the Y direction), but the width (length in the X direction). ) Can be arbitrarily formed according to the size of the minute sample piece S and the like. For example, the thickness of the fourth steps 14 to 54 can be fixed at 5 μm, and the width can be arbitrarily changed within the range of 5 to 500 μm. The thickness (length in the Z direction) of the connecting rib 60 and the connecting rib 80 is made thinner than the height of the first stage 11 of the micro sample table 10.

  FIG. 15 is a vertical cross-sectional view of the micro sample table 10 shown in FIG. FIG. 15 shows an inclination angle due to a step. 15A shows the inclination angle θ1 between the edge 14e of the fourth stage 14 and the edge 13e of the third stage 13, and FIG. 15B shows the edge 14e of the fourth stage 14 and the edge 12e of the second stage 12. In FIG. 15C, the inclination angle θ3 between the edge 14e of the fourth stage 14 and the edge 11e of the first stage 11 is shown. The thickness and height of the fourth step 14 and the thickness of the third step 13 are adjusted so that the inclination angle θ1 falls within 5 to 30 °. In addition, it is desirable that all the inclination angles θ1, θ2, and θ3 are 5 to 30 °.

  When using the micro sample stage 10 in the state of FIG. 1, first, the micro sample stage 10 is separated from the silicon wafer 101 shown in FIGS. 2 and 3 by breaking the connecting rib 60 and the connecting rib 80. The separation procedure will be described later. Next, the minute sample piece S is erected on the upper surface (top surface) of any of the fixed portions of the fourth steps 14 to 54 so that the plate surface of the minute sample piece S on the flat plate is parallel to the XZ plane. . At the time of installation, a micro sample piece S collected from a semiconductor wafer or a semiconductor device is sandwiched by, for example, nanotweezers, and after the position and angle are adjusted on the top surfaces of the fourth steps 14 to 54, an adhesive is used, for example. Finally, the nanotweezers are opened and the micro sample piece S is released.

Subsequently, the thin sample of the small sample piece S is prepared. For the thinning preparation, a method of processing with a focused ion beam (FIB) is used. In the FIB processing method, for example, the fine sample piece S is irradiated with a finely focused Ga ⁺ beam in the −Z direction, so that it is thinned to a level of 0.1 μm. At this time, the uppermost fourth stage 14 is also processed thinly. In this FIB processing stage, a work-affected layer or deposits due to the irradiation of the Ga ⁺ beam exist on the surface of the minute sample piece S, and these need to be removed. For the finishing process, as shown in FIG. 1 (b), for example, an ion milling method of irradiating the micro sample piece S from below the micro sample stage 10 with an Ar ⁺ beam at a low angle with respect to the YZ plane. Used. Thereafter, TEM observation or AES microanalysis of the micro sample piece S is performed. For example, in the case of TEM observation, when a small sample piece S thinned by FIB processing and ion milling is set as shown in FIG. 1A, the direction of the electron beam of the TEM is the Y direction.

Next, the process from the process A to the process U shown in FIGS. 4 to 11, directions are represented by XYZ orthogonal coordinates corresponding to FIGS.
The micro sample table 10 of the present embodiment is manufactured using a single crystal silicon wafer having a (001) surface as a material, and the vertical direction (Z direction) of the micro sample table 10 is the thickness direction of the single crystal silicon wafer. Formed as follows.

FIG. 4 is a diagram for explaining the manufacturing steps A to D of the micro sample table 10, and FIGS. 4 (a1) to (a4) are partial plan views of the single crystal silicon wafer on which the micro sample table 10 is formed. (B1)-(b4) is a fragmentary sectional view which followed the II-II line | wire of Fig.4 (a1)-(a4), respectively.
In step A, the single crystal silicon wafer 101 is thermally oxidized in an oxidation furnace to form SiO ₂ layers 102 a and 102 b on both the front and back surfaces of the single crystal silicon wafer 101. As the surface of the silicon wafer 101, a main surface (100) of single crystal Si is selected.
In step B, a resist is applied to the surface of the SiO ₂ layer 102 by a spin coater, and prebaking is performed using a hot plate.
In step C, a photomask is used and pattern exposure and development of the resist 103 are performed using a mask aligner. As shown in FIG. 4 (a3), since the region including the five patterns formed in the X direction is a unit constituting one micro sample table 10, three units C1, C2 and C3 are shown.
In step D, the SiO ₂ layer 102a is wet etched with buffered hydrofluoric acid using the resist 103 as a mask. The SiO ₂ layer 102b formed on the entire back surface is removed by wet etching.

5A and 5B are diagrams for explaining the manufacturing steps E to H of the micro sample stage 10, wherein FIGS. 5A1 to 5A4 are partial plan views of the single crystal silicon wafer, and FIGS. 5B1 to 5B4 are illustrated. FIG. 6 is a partial cross-sectional view taken along line II-II in FIGS. 5 (a1) to (a4).
In step E, the remaining resist 103 is removed by wet etching with a remover.
In step F, an Al film 104 is formed by sputtering on the surface of the silicon wafer 101 on which the SiO ₂ layer 102a is formed.
In step G, a resist is applied to the surface of the Al film 104 by a spin coater, and prebaking is performed using a hot plate.
In step H, a photomask is used and pattern exposure of the resist 105 is performed using a mask aligner.

6A and 6B are diagrams for explaining the manufacturing steps I and J of the micro sample table 10. FIGS. 6A1 and 6A2 are partial plan views of a single crystal silicon wafer, and FIGS. 6B1 and 6B2 are views. FIG. 7 is a partial cross-sectional view taken along line II-II in FIGS. 6 (a1) and (a2), respectively.
In step I, the Al film 104 is wet etched with a mixed acid P solution using the resist 105 as a mask. Three layers consisting of the SiO ₂ layer 102a, the Al film 104, and the resist 105 remain in a pattern.
In step J, the remaining resist 105 is removed by wet etching with a remover.

7A and 7B are diagrams for explaining a manufacturing step K of the micro sample stage 10, in which FIG. 7A is a partial plan view of a single crystal silicon wafer, and FIG. 7B is II-II in FIG. 7A. FIG. 7C is a partial cross-sectional view taken along the line, and is a plan view of the single crystal silicon wafer. The partial plan view of FIG. 7A corresponds to the hatched portion C of FIG. This hatched portion C corresponds to C1 + C2 + C3 shown in FIG.
In step K, dicing is performed in the Y direction in FIGS. 7A and 7C to form grooves Y1 and Y2 having a depth d1 that is halfway through the thickness of the silicon wafer 101. The groove Y1 is formed only at the center of the silicon wafer 101, whereas the groove Y2 is formed from the end to the end of the surface of the silicon wafer 101.

8A and 8B are diagrams for explaining a manufacturing process L of the micro sample table 10, FIG. 8A is a partial plan view of a single crystal silicon wafer, and FIG. 8B is II-II in FIG. 8A. FIG. 8C is a partial cross-sectional view taken along the line, and is a plan view of the single crystal silicon wafer. The partial plan view of FIG. 8A corresponds to the hatched portion C of FIG.
In step L, dicing is performed in the X direction in FIGS. 8A and 8C to form grooves X1 to X4 having a depth d2 (<d1) halfway through the thickness of the silicon wafer 101.

9A and 9B are diagrams for explaining the manufacturing process M of the micro sample table 10, FIG. 9A is a partial plan view of a single crystal silicon wafer, and FIG. 9B is II-II in FIG. 9A. FIG. 9C is a partial cross-sectional view taken along the line, and is a plan view of the single crystal silicon wafer. The partial plan view of FIG. 9A corresponds to the hatched portion C of FIG.
In step M, the grooves X1a to X4a are put in the center of the bottom surface of the grooves X1 to X4 formed in step L to form a step. The depth d3 of the grooves X1a to X4a does not reach the back surface of the silicon wafer 101, but is deeper than the depth d1 of the groove Y1, and the widths of the grooves X1a to X4a are narrower than the grooves X1 to X4.

Here, the dicing used in the processes K to M will be described.
FIG. 12 is a partial side view of the micro sample table 10 in step M shown in FIG. 9 as seen by cutting along the XZ plane passing through the grooves X1 and X1a. As illustrated, the groove X1 is formed by sending the rotary blade DB1 in the + X direction with the height position of the rotary blade DB1 of the dicing apparatus as a1. Similarly, the groove X1a is formed by sending the rotary blade DB2 in the + X direction with the height position of the rotary blade DB2 whose blade thickness is thinner than DB1 as a2 (<a1). The groove Y1 is formed in the same manner with the feed direction of the rotary blade being the Y direction. The thickness of the silicon wafer 101 is represented by t.

  The above groove processing is performed by the method shown in FIG. FIG. 13 is a perspective view for conceptually explaining groove processing by dicing. As shown in FIG. 2, the groove Y <b> 2 is formed by dicing across the surface of the silicon wafer 101, but the groove Y <b> 1 is diced only at the center of the silicon wafer 101. Such a cut is called a chopper traverse cut. In the formation of the groove Y1, the rotary blade DB is lowered from the surface of the silicon wafer 101 by the depth d2 at the position b1, and the rotary blade DB is cut while being fed horizontally. At the position b2, the rotary blade DB is raised from the silicon wafer 101 to finish the cutting. When performing the second chopper traverse cut, the rotary blade DB is moved from the position b2 to another position. In the second cut, the feed direction of the rotary blade DB may be the same direction as the first, or the reverse direction, but the same direction is convenient for setting the cutting conditions.

FIG. 10 is a diagram for explaining manufacturing steps N to Q following the step M of the micro sample table 10. FIGS. 10 (a1) to (a4) are partial plan views of the single crystal silicon wafer, and FIG. 10 (b1) to FIG. (B4) is a partial sectional view taken along line II-II in FIGS. 10 (a1) to (a4).
In step N, the silicon wafer 101 is dry-etched in the thickness direction (−Z direction) by ICP-RIE (inductively coupled plasma-reactive ion etching) using the pattern of the Al film 104 as a mask. By this dry etching, the area of the silicon wafer 101 where the pattern of the Al film 104 does not exist is uniformly reduced in thickness, and the grooves Y1, X1 to X4, and grooves X1a to X4a are also uniformly deepened. Etching is controlled so that X1a to X4a do not reach the back surface of the silicon wafer 101. In this process, as shown in FIG. 10 (b2), a three-step step is formed as a prototype of a multistage micro sample table.
In step O, the pattern of the Al film 104 is removed by wet etching with a mixed acid P solution.

In step P, the silicon wafer 101 is dry-etched in the thickness direction (−Z direction) by ICP-RIE using the exposed pattern of the SiO ₂ layer 102a as a mask. By this dry etching, the region of the silicon wafer 101 where the pattern of the SiO ₂ layer 102a does not exist is uniformly reduced in thickness. The grooves Y1, X1 to X4, and X1a to X4a are also uniformly deep, but the etching is controlled so that the deepest grooves X1a to X4a do not reach the back surface of the silicon wafer 101. Each of the three steps is dug down, and the uppermost step based on the pattern of the SiO ₂ layer 102a is newly formed. As shown in FIG. 10 (b3), four steps are formed.
In step Q, the pattern of the SiO ₂ layer 102a is removed by wet etching using buffered hydrofluoric acid.

FIG. 11 is a diagram for explaining manufacturing steps R to U of the micro sample table 10. FIGS. 11 (a1) to (a4) are partial plan views of the single crystal silicon wafer, and FIGS. 11 (b1) to (b4) FIG. 12 is a partial cross-sectional view taken along line II-II in FIGS. 11 (a1) to (a4).
In step R, the silicon wafer 101 on which the structure of the micro sample table 10 is being formed is thermally oxidized to form a thermal oxide film 106 on the entire surface. The thermal oxide film 106 serves as a protective film against subsequent wet etching.
In step S, the thermal oxide film 106 formed on the back surface 101A of the silicon wafer 101 is etched away by RIE.
In step T, the layer on the back side of the silicon wafer 101 is removed by wet etching. This etching is stopped when the thermal oxide film 106 formed on the bottom surfaces of the grooves X1a to X4a is reached.
In step U, the thermal oxide film 106 remaining on the surface of the silicon wafer 101 is removed by etching. The grooves X1a to X4a penetrate to the back side of the silicon wafer 101, and a space extending in the X direction (same as the space SP shown in FIG. 2) is formed between the micro sample tables 10. At this stage, the groove Y1 does not reach the back surface of the silicon wafer 101.

  As shown in FIG. 2, the lower part of the groove Y <b> 1 becomes the connecting rib 60 by the above-described steps A to U, and the micro sample tables 10 are connected in a row in the X direction via the connecting rib 60. Similarly to the groove Y 1, the groove Y 2 does not reach the back surface of the silicon wafer 101, and the lower part of the groove Y 2 becomes the connection rib 80, and the row of the micro sample tables 10 is connected to the outer frame in the X direction via the connection rib 80. 70. That is, the minute sample base assembly 50 of the present embodiment has a structure supported by the outer frame 70.

FIG. 14 is a diagram for explaining a procedure for separating individual micro sample tables 10 from the silicon wafer 101 on which the micro sample table aggregate 50 shown in FIG. 2 is formed.
FIG. 14A shows the silicon wafer 101 when the process U of FIG. 11 is completed, and grooves Y1, Y2 and grooves X1 to X4 are formed. As shown in FIG. 14 (b1) and FIG. 14 (b2) which is a side view of FIG. 14 (b1), two plates on a flat plate having a width substantially equal to the interval between the two upper and lower grooves Y2 are shown. The silicon wafer 101 is sandwiched between the tools 201. 14 (c1) and FIG. 14 (c2) which is a side view of FIG. 14 (c1), the upper and lower portions 71 of the outer frame 70 not contacting the jig 201 are folded along the groove Y2. Separate. By separating the upper and lower portions 71, the left and right portions 72 of the outer frame 70 shown in FIG. Finally, each micro sample stage 10 is separated by separating the connecting rib 60 shown in the side view of FIG. 14E using, for example, tweezers. Such a separation operation can be easily performed by the user.

  In the manufacturing processes A to U described above, a series of manufacturing procedures for the three micro sample tables 10 has been described. However, the actual manufacturing process is a so-called batch process performed in units of silicon wafers. In this batch processing, a large number of micro sample tables 10 can be produced from a single silicon wafer at a time by micromachining using photolithography, dicing, and the like, and a significant reduction in manufacturing cost can be expected. Furthermore, since the processing is performed so that the height direction of the micro sample table 10 is the thickness direction of the silicon wafer, the material can be used without waste.

As described above, the micro sample table 10 and the micro sample table assembly 50 of the present embodiment have the following effects (1) to (3).
(1) Since the user can easily perform the separation work of the micro sample table 10 immediately before use, the micro sample table 10 can be stored or transported collectively as the micro sample table assembly 50, which is excellent in handling convenience.
(2) Since a large number of micro sample bases 10 can be simultaneously fabricated from a silicon wafer by micromachining technology, the manufacturing cost per unit can be greatly reduced. Moreover, since the height direction of the micro sample stage 10 is the thickness direction of the silicon wafer, it is advantageous for material removal.
(3) Since a symmetrical shape is exhibited in the thickness direction, the balance is maintained even if the thickness is reduced, and the shape stability during and after FIB processing is high. Furthermore, since the structure is symmetrical, the manufacturing process can be simplified as compared with the asymmetric structure.

  Various modifications are conceivable for the micro sample table 10 and the micro sample table assembly 50 according to the above embodiment. For example, the thicknesses of the connecting rib 60 and the connecting rib 80 can be adjusted by changing the cut depths of the grooves Y1 and Y2, respectively. The thicker the rib, the harder it is to separate, but the strength stability of the micro sample table assembly 50 is improved.

  The present invention is not limited to the embodiments described above as long as the characteristics are not impaired. For example, the material is not limited to a silicon wafer, and various flat plate materials can be used. Further, the groove or the gap space may be formed only by the etching process without performing the dicing process.

It is a figure which shows typically the state which affixed the micro sample stand which concerns on embodiment of this invention to the base mesh, FIG. 1 (a) is a front view, FIG.1 (b) is a side view. It is a perspective view which shows typically the single crystal silicon wafer in which the micro sample stand aggregate | assembly concerning embodiment of this invention was formed. It is a fragmentary perspective view which shows typically the structure of the micro sample stand aggregate | assembly which concerns on embodiment. It is a figure explaining the manufacturing process AD of the micro sample stand which concerns on embodiment, FIG.4 (a1)-(a4) is a partial top view of the silicon wafer 101 which is material, FIG.4 (b1)-(b4) ) Is a partial sectional view taken along line II-II. FIGS. 5A to 5A are partial plan views of a silicon wafer 101 as a material, and FIGS. 5B1 to 5B4. FIG. ) Is a partial sectional view taken along line II-II. FIGS. 6A and 6B are diagrams for explaining manufacturing steps I and J of a micro sample stage according to the embodiment, FIGS. 6A1 and 6A2 are partial plan views of a single crystal silicon wafer, and FIGS. 6B1 and 6B2 are FIGS. FIG. 7 is a partial cross-sectional view taken along line II-II in FIGS. 6 (a1) and (a2), respectively. FIGS. 7A and 7B are diagrams illustrating a manufacturing step K of a micro sample stage according to the embodiment, FIG. 7A is a partial plan view of a single crystal silicon wafer, and FIG. 7B is II-II in FIG. FIG. 7C is a partial cross-sectional view taken along the line, and is a plan view of the single crystal silicon wafer. It is a figure explaining the manufacturing process L of the micro sample stand which concerns on embodiment, FIG. 8 (a) is a partial top view of a single crystal silicon wafer, FIG.8 (b) is II-II of Fig.8 (a). FIG. 8C is a partial cross-sectional view taken along the line, and is a plan view of the single crystal silicon wafer. It is a figure explaining the manufacturing process M of the micro sample stand which concerns on embodiment, FIG. 9 (a) is a fragmentary top view of a single crystal silicon wafer, FIG.9 (b) is II-II of Fig.9 (a). FIG. 9C is a partial cross-sectional view taken along the line, and is a plan view of the single crystal silicon wafer. It is a figure explaining manufacturing process NQ following process M of the micro sample stand concerning an embodiment, and Drawing 10 (a1)-(a4) is a partial top view of a single crystal silicon wafer, and Drawing 10 (b1)- (B4) is a partial sectional view taken along line II-II in FIGS. 10 (a1) to (a4). FIGS. 11A to 11A are partial plan views of a single crystal silicon wafer, and FIGS. 11B1 to 11B4 are diagrams illustrating manufacturing steps R to U of a micro sample table according to an embodiment. FIGS. FIG. 12 is a partial cross-sectional view taken along line II-II in FIGS. 11 (a1) to (a4). It is the partial side surface sectional view seen by cut | disconnecting the micro sample stand 10 by the XZ surface which passes along groove | channel X1, X1a. It is a perspective view explaining the groove processing by dicing notionally. It is a figure explaining the procedure which isolate | separates each micro sample stand 10 from the silicon wafer 101 in which the micro sample stand aggregate | assembly 50 shown in FIG. 2 was formed. It is a longitudinal cross-sectional view of the micro sample stand 10 shown in FIG. 3, and shows an inclination angle due to a step.

Explanation of symbols

1-5: Protruding portion 10: Micro sample stage 11: First stage 12: Second stage 13, 23, 33, 43, 53: Third stage 14, 24, 34, 44, 54: Fourth stage 50: Micro sample base assembly 60: Connection rib 70: Outer frame 80: Connection rib 100: Base mesh 101: Silicon wafer 102: SiO ₂ layer 103, 105: Resist 104: Al film 106: Thermal oxide film DB, DB1, DB2: Rotating blade S: Minute sample piece X1 to X4, X1a to X4a, Y1, Y2: Groove

Claims (7)

A micro sample table for fixing a micro sample to be processed is connected to each other in a plane of a flat plate-like material, and is arranged in a two-dimensional manner . It has a multi-stage shape in the thickness direction, and has one base portion and a plurality of fixing portions arranged along the longitudinal direction of the base portion and having the thinnest thickness to which a micro sample is fixed. The part is formed of the same semiconductor material as that of the base part and is spaced apart from the adjacent fixed part . In the micro sample stand assembly according to claim 1,
The flat plate material is a silicon wafer, the stacking direction of the base and the fixed portion is the thickness direction of the silicon wafer, and each of the micro sample tables is formed in a multistage shape by a micromachining technique. A small sample table assembly. In the micro sample stand assembly according to claim 2,
Column-shaped body which is connected to the micro-sample stand adjacent in a plurality of micro sample stage is connected portions are a plurality of sequences, interstitial spaces there are no silicon wafers between each column-like body is formed, each column-like body Both end portions of the micro sample table assembly have connection portions connected to the peripheral edge portion of the silicon wafer. In the micro sample stand assembly according to claim 3,
The gap space between the rows is formed by dicing the silicon wafer in the thickness direction and then removing the formed grooves by etching. Aggregation. In the micro sample stand assembly according to claim 3 or 4,
The thickness in the thickness direction of the silicon wafer at the connecting portion that connects between the micro sample tables that form the columnar body, and the silicon wafer at the connection portion that connects the columnar body to the peripheral edge of the silicon wafer. The thickness in the thickness direction is controlled by performing a dicing process and an etching process on the silicon wafer.   The micro sample stage assembly according to any one of claims 3 to 5, wherein the connection part and the connection part are formed thinner than a height of the base part. In the micro sample stand according to any one of claims 1 to 6,
The fixing base is provided at the uppermost stage of the projecting portion having a multi-stage shape, and the projecting portion having a multi-stage shape is arranged along the longitudinal direction of the base portion so as to be spaced apart from adjacent fixing portions. A micro sample table assembly characterized by having

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