JP2003035682A - Sample holder and sample analysis method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To observe a phenomenon that is generated in a device by directly applying a voltage to a specific section inside an LSI whose design dimensions are approximately 0.1 μm. SOLUTION: A process for mounting fine conductors 30a and 30b to an extracted fine sample piece 72, and a process for applying a voltage to the mounted fine conductors are added to a process for machining and extracting an arbitrary region in a target sample into fine sample pieces using charge particle beams.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a sample analysis method, and more particularly to a method for analyzing a sample such as a semiconductor or an electronic device material, and a sample holder used for the analysis.

[0002]

2. Description of the Related Art In order to find a failure location of an LSI or a failure location that limits the operating characteristics, it is necessary to directly measure the potential inside the LSI. In addition, it is necessary to elucidate the cause of the failure in the searched out part. First, in order to find a failure location, conventionally, a thin metal probe was brought into contact with internal wiring while observing with an optical microscope, and a waveform was observed with an oscilloscope connected thereto, and voltage was measured. In this case, not only does the operation require skill, but the LSI may be broken in some cases. There is also a method of detecting a light emitting portion with a positional accuracy of 1 μm or less and determining a failure portion by using an emission microscope method. Furthermore, as another conventional technique, the potential contrast that reflects the potential distribution on the sample surface of the scanning electron microscope is used, the electron beam is used as a probe for measuring potential, the target wiring is irradiated with the beam, and the potential waveform is sampled. , There are electron beam testers that test the electrical characteristics of LSIs. In any of the above cases, only the failure location and the location where the operating characteristics are restricted are determined.

Therefore, when the analysis point is determined by the above conventional technique, the focused ion beam (FIB: Focused Ion) is next determined.
Beam) method and scanning electron microscope (SEM: Scanning Electr)
on Microscopy) method was used to observe specific analysis points at higher magnification. If there is no analysis point on the surface or if the cause of failure cannot be understood without observing the cross section, FIB
Was processed so that the cross-section would appear on the surface, and observed by SEM or FIB. When observation with higher resolution than that of SEM or FIB is required, JP-A-11-13505
As described in Japanese Patent Publication No. 1, a thin film sample is prepared by separating a micro sample at a specific location from a sample substrate by FIB irradiation and sample transport means, and then a transmission electron microscope (TEM) is used.
Electron Microscopy) method was used for observation.

[0004]

In the above-mentioned prior art, since the optical microscope is used, the resolution is low, and no consideration has been given to dealing with the wiring having the design dimension of the LSI of about 0.1 μm. The other observation methods described above only detect the potential failure portion inside the LSI and cannot directly observe the operation and structural change of the failure portion. Moreover, it is not considered to directly observe the operation of a normal part. Further, in the above-mentioned another conventional technique, after the analysis point is specified, the specific point is searched for with a device for morphological observation and observed, and when the cross-section observation is necessary, the specific point is taken out and thin film processing is performed. Although it was observed, no consideration was given to directly observing the phenomenon occurring in the device while applying a voltage to the minute portion of the sample.

An object of the present invention is to extract a specific portion inside a sample such as an LSI having a design dimension of about 0.1 μm, which was difficult in the prior art, and use it as a sample for TEM, and directly apply a voltage to the minute portion of the sample. An object of the present invention is to provide a sample analysis method capable of observing a change in a device when applied, for example, a change in crystal structure of a metal used for wiring, a measurement of withstand voltage of an insulating film when a voltage is applied, and a change due to voltage. . Another object of the present invention is to provide a sample analysis method capable of detecting a potential fault location by directly wiring a minute portion inside a sample such as an LSI and directly measuring a current when a voltage is applied. It is in. It is still another object of the present invention to provide a sample holder that enables direct analysis to a minute portion inside a sample such as an LSI and applies a voltage.

[0006]

The above object can be achieved by the following means. The sample holder according to the present invention comprises means for holding the sample stage on which the sample is attached, and is mounted in the charged particle beam device so that the sample attached to the sample stage is located on the optical axis of the charged particle beam device. A feature of the sample holder is that the tip for applying a voltage to a predetermined portion of the sample has a pair of fine conductive wires that can freely move.

This sample holder is provided with a pair of conducting wires that pass through the shaft of the sample holder and is connected to an external power source, and a means for detachably connecting a pair of fine conducting wires to the ends of the pair of conducting wires. Can be It is preferable that a part of the fine wire has a coil shape in order to increase the freedom of movement of the tip.

The sample analysis method according to the present invention comprises a step of extracting a minute sample piece from a sample, a step of fixing the minute sample piece to a sample holder, and a pair of fine conducting wires at predetermined positions of the minute sample piece fixed to the sample holder. Is attached so that it can be energized, a step of applying a voltage to the pair of fine conductors, and a step of measuring a current flowing through a pair of fine conductors at a predetermined location of the micro sample piece.

The sample analysis method according to the present invention also includes a step of extracting a minute sample piece from the sample, a step of fixing the minute sample piece to the sample holder, and a pair of predetermined portions of the minute sample piece fixed to the sample holder. A step of attaching a fine conductor wire so that it can be energized, a step of mounting a sample holder to which a minute sample piece having a pair of minute conductor wires attached is fixed to a charged particle beam device, and a predetermined step of the minute sample piece through a pair of minute conductor wires. And a step of observing the predetermined part of the micro sample piece with a charged particle beam device while applying a voltage to the part.

The step of extracting the micro sample piece from the sample may be a step of extracting the micro sample piece from the sample by processing using a focused ion beam, or a step of extracting the micro sample piece from the sample by machining. May be The charged particle beam device can be a transmission electron microscope, in which case it is possible to observe an electron beam transmission image of a predetermined location while applying a voltage to a predetermined location of a micro sample piece through a fine conducting wire. It is possible to observe in real time the phenomenon that occurs when a voltage is applied.

The step of electrically attaching a pair of fine conducting wires to the minute sample piece includes the step of finely processing the tip portion of the fine conducting wire or the tip portion of the chip fixed to the fine conducting wire by the focused ion beam, and the finely worked step. The method may include the step of moving the tip of the fine conductor wire or the tip to a predetermined position on the micro sample piece, and the step of fixing the tip of the finely processed fine conductor wire or the tip to the predetermined position on the micro sample piece.

The step of moving the finely processed fine conductor wire or the tip of the chip to a predetermined position on the fine sample piece is
Three axes (X, Y, Z) provided in the focused ion beam device
This can be performed by fixing the drivable manipulator tip portion to a fine conductor wire or a part of the chip by beam assist deposition and moving the manipulator.

In the sample analyzing method according to the present invention, the tip of the manipulator which can be driven in three axes (X, Y, Z) provided in the focused ion beam apparatus is subjected to beam-assisted deposition to produce the first fine conductor wire or the first fine conductor wire. Fixing to a part of the first chip fixed to the fine conductor wire, and a step of moving the manipulator to move the first fine conductor wire or the tip of the first chip to a predetermined position on the sample. Attaching the first fine conductor wire or the tip of the first chip to a predetermined location in the sample by beam assisted deposition, and repeating the above steps to the second fine conductor wire or the second fine conductor wire in the predetermined location in the sample. Attaching the tip portion of the second chip fixed to the fine conductor wire of
Applying a voltage between the fine conductor wire and the second conductor wire,
And a step of measuring a current flowing through the sample through the first fine conductor wire and the second fine conductor wire.

[0014]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a schematic diagram showing an example of a focused ion beam (FIB) device used in the present invention. The FIB device 1 includes an ion gun 2, a condenser lens 3, a diaphragm 4, a deflector 5, an objective lens 6, a sample fine movement mechanism 7, a sample holder 8, and a secondary electron detector 9. Sample 1
1 is movable in three axis (X, Y, Z) directions, and is loaded on a sample holder 8 whose sample loading section is rotatable. Sample 1
The movement of 1 is performed by the sample fine movement mechanism 7 controlled by the fine movement control unit 12. A deflector 5 for deflecting and scanning the focused ion beam 10 incident on the sample 11 is arranged between the condenser lens 3 and the objective lens 6. The deflector 5 is a deflection signal control unit 15 that controls the processing area.
The deflection signal control unit 15 is connected to the CPU 16 in order to obtain beam position data.

Ion beam 1 emitted from ion gun 2
0 passes through the condenser lens 3 and the objective lens 6 and is converged on the sample 11 held by the sample holder 8. Secondary electrons generated from the sample 11 by the ion beam irradiation are detected by the secondary electron detector 9. The detection signal of the secondary electron detector 9 is amplified by the amplifier 13 and input to the monitor 14. By synchronizing the XY position signal on the screen of the monitor 14 with the deflection control of the ion beam 10 and modulating the brightness of the monitor 14 by the secondary electron intensity signal from the secondary electron detector 9, the sample on the monitor 14 can be adjusted. Scanning ion microscopy (SIM)
The image is displayed.

As will be described later, two fine conducting wires are attached to the sample holder 8 in the vicinity of the sample supporting portion with the tip thereof floating. A manipulator 20 movable in three axis (X, Y, Z) directions is arranged in the sample chamber of the FIB apparatus 1, and the manipulator 20 is driven by a manipulator drive unit 21 under the control of a manipulator drive control unit 22. . As will be described later, the movement of the tip of the fine conductor wire is performed by fixing the manipulator 20 to the fine conductor wire and moving the manipulator 20. The fixing of the manipulator 20 to the fine lead wire is performed by the deposition gun 23.
A so-called ion beam assisted deposition, in which a tungsten compound gas or a carbon compound gas is sprayed from the above to react with the ion beam 10.

FIG. 2 is a schematic diagram of the tip of an example of the sample holder according to the present invention. The sample holder 8 is used for mounting a minute sample piece extracted from the sample and inserting it into the FIB apparatus or another charged particle beam apparatus such as a transmission electron microscope for observation. Around the sample fixing portion of the sample holder 8, a groove 31 for crawling the fine conductive wires 30a and 30b made of tungsten, copper or the like having a thickness of about 5 to 10 μm.
Is provided, and the inner wall of the groove 31 is coated with an insulator so that the fine conductor wire is not grounded. Alternatively, groove 3
Instead of coating the inner wall of No. 1 with an insulating material, fine conductor wires 30a, 3 having the tip and the end except for the insulating material are coated.
0b may be used. In the tubes 32a, 32b provided in the shaft of the sample holder 8, conductors 33a, 33b thicker than the fine conductors are passed, and the fine conductors 30a, 30b are
Screws 34a and 34b are attached to the tips of the conductors 33a and 33b.
Connected by. The other ends of the conducting wires 33 a and 33 b are drawn out from the end of the sample holder 8. The inner walls of the tubes 32a and 32b are coated with an insulating material. The two fine conducting wires 30a and 30b can be freely moved at their tips, and are partially coiled to increase the degree of freedom of movement of the tips. In-shaft tubes 32a, 32b and conductors 33a provided in the shaft of the sample holder 8,
O-rings 35a and 35b are arranged between the portions 33b in order to maintain the vacuum inside the charged particle beam device sample chamber and the observation device chamber when the sample holder 8 is inserted into the charged particle beam device. Alternatively, the space between the axial tubes 32a, 32b and the conductors 33a, 33b may be sealed with resin or the like to maintain airtightness.

In FIG. 3, the fine conductors 3 are attached to the conductors 33a and 33b.
It is a detailed view showing the structure for fixing the tip of 0a, 30b. 3A is a top view and FIG. 3B is a side view. As shown in the figure, the fine conductors 30a and 30b have a structure in which they can be detachably fixed to the ends of the conductors 33a and 33b and can be replaced. Conductors 33a, 33b passing through tubes 32a, 32b in the shaft of the sample holder 8
The diameter of the fine conductive wires 30a and 30b is larger than that of the fine conductive wires 30a and 30b. The ends of the conductive wires 33a and 33b are divided into two parts, and the screw 24 is provided at the base part of the two divided parts. Fine conductor 3
In the gap between the two divided ends of 0a and 30b, the conductive wire 33a,
The end of 33b is sandwiched, and screws 34a and 34b are tightened to narrow the gap to fix the end. 4A and 4B are schematic views of a sample holder 40 for fixing the sample holder to which the sample is attached to the sample holder 8. FIG. 4A is a view of the surface of the sample holder, and FIG. FIG. 4C is a top view of the sample holder, which is a view of the back surface of the sample holder facing each other.

A sample table to which a sample is attached (see FIG. 9 etc.)
Is placed so as to bridge the annular sample holder 36 (see FIG. 2) that is lowered in the shape of a semi-disk near the central opening of the sample holder 8, and the sample holder 40 is placed on it. Fix it. The left and right ends 41, 42 of the sample holder 40 and the peripheral portion 43 of the opening are tapered. The sample holder 40 is fixed to the sample holder 8 by the sample holder spring 38 (see FIG. 2). Specifically, sample holder 4
The taper part 41 of 0 is inserted into the reverse taper part 37 of the sample holder 8 shown in FIG. 2, the sample pressing spring 38 is moved to the set sample pressing 40, and the sample pressing 40
The sample table is fixed so that the sample table is mounted on the taper portion 42 of. The portion where the sample holder 40 is in contact with the fine conductors 30a and 30b or the back surface 44 of the sample holder 40 has the fine conductor 3
0a and 30b are coated with an insulating material so as not to be grounded.

For the sample to which the fine conductor wire is fixed by the processing using the FIB device, a voltage is applied to the specimen from the fine conductor wire to measure the energization current, or a change in the state of the specimen when the current is passed is observed. It For sample measurement and observation,
It can be carried out continuously in the FIB device used for attaching the fine conductor wire to the sample, or depending on the purpose of measurement or observation, after attaching the fine conductor wire to the sample by the FIB device, the sample holder is detached from the FIB device. It can also be carried out by mounting it on a charged particle beam device such as a transmission electron microscope. The FIB device 1 shown in FIG. 1 is equipped with a voltage power supply 18 for applying a voltage to the conductors 33a, 33b drawn out from the sample holder 8 and a voltage power supply controller 19 for controlling the voltage power supply. A voltage can be applied to the processed sample for subsequent measurement and observation.

FIG. 5 is a detailed view of a sample voltage applying section for applying a voltage to a sample through a fine lead wire of a sample holder 8 mounted on a lens barrel 50 of a charged particle beam apparatus such as a FIB apparatus or a transmission electron microscope. is there. The sample voltage application unit is composed of the sample holder 8, the voltage power supply 18, and the voltage power supply control unit 19. The minute sample piece is fixed in advance by a tungsten deposition film on, for example, a semi-disc-shaped sample table attached to the sample holder 8. The sample table is fixed to the sample holder 8 by a sample holder. The tips of two fine conducting wires are fixed to the micro sample piece by a tungsten deposition film. Conductive wires 33a, 3 led out to the outside
The end of 3b is connected to the voltage power supply 18,
Is connected to the voltage power supply controller 19. Sample holder 8
The axis of is equipped with an O-ring 51 around it to maintain the vacuum in the charged particle beam device.

Next, an example of the sample analysis method according to the present invention will be described step by step with reference to FIGS. 6 to 13. (A) In advance, a specific portion in the LSI sample 60 is observed with an optical microscope or the like, and markings 61a to 61d are provided around the specific portion using a laser marker (FIG. 6A). (B) The sample 60 is introduced into the FIB device shown in FIG.
The sample 60 is irradiated with the focused ion beam 10 and the SIM image by the generated secondary electrons is observed. With the markings 61a to 61d attached with laser markers as marks, SIM images,
Search for a specific location (Fig. 6 (b)).

(C) A groove 62 is formed around the specific portion by the focused ion beam 10 (FIG. 6 (c)). (D) Using the beam assist deposition function of the manipulator 20 mounted on the FIB device and capable of operating in the XYZ directions, a micro sample including a specific portion on the tungsten (W) deposition film 71. It is adhered to the end of the piece 72 (FIG. 7A).

(E) The micro sample piece 72 is completely cut from the original sample 60, and the manipulator 20 is lifted and retracted (FIG. 7 (b)). (F) The sample holder 80 for fixing the minute sample piece 72 is set on the sample holder 8 provided with the fine conducting wires 30a, 30b for voltage application, and the sample holder 40 is pressed and fixed (FIG. 8). The sample holder 8 is introduced into the FIB device.
Tips 39a and 39b made of tungsten or the like are fixed to the tips of the fine conductive wires 30a and 30b, and the tips of the tips are preliminarily processed by the FIB 10 so as to have a diameter of about submicron. The chips 39a and 39b do not necessarily have to be used. Although the shape of the sample table 80 is a rectangular parallelepiped in the drawing, it is generally an annular sample table receiving portion 3 of the sample holder 8.
It has a semi-disc shape that fits in 6 (see FIG. 2).

(G) The manipulator 20 to which the micro sample piece 72 is adhered is moved to fix the micro sample piece 72 to the sample table 80 with W deposition films 81a and 81b (FIG. 9).
(A)). (H) The manipulator 20 is separated by the focused ion beam 10 (FIG. 9B). (I) When it is necessary to reduce the film thickness, the sample ion piece 72 is processed into a thin film by the focused ion beam 10 (FIG. 9C).

(J) The manipulator 20 is brought into contact with the root portion of the tip 39a attached to the tip of the fine conducting wire 30a attached to the sample holder 8 to bring the W deposition film 8 into contact.
The manipulator 20 is adhered to the fine conducting wire 30a by 2 (FIG. 10A). (K) The tip portion of the tip 39a is
It is processed into a diameter of about 0.1 μm and sharpened. Chip 1
When 2 is not used, the tip of the fine conductive wire 39a itself is processed to have a diameter of about 0.1 μm and sharpened (FIG. 10).
(B)).

(L) The manipulator 20 is driven to bring the tip of the tip 39a of the fine conducting wire 30a into contact with the wiring in the micro sample piece 72, and the W deposition film 83a is used to connect the tip 39a and the wire in the micro sample piece 72. And (FIG. 11A). (M) The manipulator 20 is separated by the focused ion beam 10 (FIG. 11B). (N) Similarly, the other fine conducting wire 30b is adhered to another wiring portion of the sample minute piece 72 by the W deposition film 83b (FIG. 11C). After that, focused ion beam 1
0 is used to disconnect the manipulator 20 from the fine conductor wire 30b. Next, the micro sample piece 72 is conveyed together with the sample holder 8 to an observation device such as a transmission electron microscope, and the micro conductive wire 30a,
The conductors 33a and 33b to which 30b is attached are connected to a voltage power source placed outside the device.

(O) After that, the voltage power source is controlled to apply a voltage to the wiring portion of the sample fine piece 72 in contact with the fine conductive wires 30a and 30b, and while measuring the current, the voltage is applied to the inside of the sample piece 72. The phenomenon occurring in the wiring portion is observed (Fig. 12). For example, when a large current is applied to a metal wire in a device, the metal atom of the wire moves and is swept away by collision with an electron, and a cavity or a crack is generated. Although this phenomenon is called migration, the above method makes it possible to observe such phenomenon in real time.

An example will be described in which the sample 72 produced by the above method is inserted into a transmission electron microscope and its cross section is observed. FIG. 13 is a schematic diagram illustrating an example of a phenomenon observed by the method of the present invention. FIG. 13A is an example of a cross-section observation of the micro sample piece 90 having the metal wiring 91. The metal wiring 91 is a metal nitride film 9 for preventing migration.
It is covered with 2,93 etc. In the state where no voltage is applied, as shown in FIG. 13A, no voids or cracks are observed in the wiring 91, it is observed that the crystal grains 94 are spread, and inclusions are not present in the crystal grain boundaries 95. Not observed.
Next, an electric current is applied to the wiring 91 of the sample 90 to observe the phenomenon of occurrence of migration. By passing a large current,
By directly observing how the cavities 96 and cracks are generated, finally, as shown in FIG. 13B, a state in which the metal nitride film 93 is broken and the metal crystal grains 94 are melted and projected, and the cavities 96 are formed.
Structural changes such as occurrence of are observed in real time. Also, the applied voltage is changed and the voltage dependence of migration occurrence is measured. From the results obtained, it becomes possible to elucidate the mechanism of migration occurrence.

In the above observation example, the site specified by the optical microscope was extracted from the sample. However, the failure site of the sample may be detected in the FIB apparatus by applying a voltage, and the site may be extracted. . The method will be described with reference to FIG. (A) The manipulator 20 is driven to drive the fine conductor wire 30a.
The tip portion of the chip 39a attached to the sample 100a is brought into contact with the wiring inside the sample 100, and the W deposition film 101 bonds the chip 39a and the wiring inside the sample 100 (FIG. 14).
(A)). (B) The manipulator 20 is separated from the tip 39a by a focused ion beam, and another wiring in the sample 100 is brought into contact with the tip 39b attached to the other fine conducting wire 30b in the same manner as in (a), and the W deposition film 102 is formed. To adhere (FIG. 14B). (C) The manipulator 20 is separated from the chip 39b by a focused ion beam, the voltage power supply 25 is controlled, and a voltage is applied to the contacted wiring portion. Measure the current and sample 100
Observe the state of and determine the analysis point.

By the above operation, the sample 100 can be observed in a plane in a bulk state when a voltage is applied. It is also possible to extract the determined analysis point according to the steps described with reference to FIGS. 6 and 7 and further observe it from the cross-sectional direction. Further, in the above-mentioned embodiment, a specific portion was extracted and a voltage was applied to a part of the extracted minute sample piece. However, a sample thinned in advance by machining or the like is used, and the steps described in FIGS. Accordingly, a voltage may be applied to the sample wiring for observation.

Further, in the above example, the fine conductive wires 30a, 3
Although 0b is attached to the sample holder 8, it may be attached near the sample piece arranged in the sample chamber of the FIB device.
FIG. 15 is a schematic view of a sample chamber of an FIB device in which a fine conductor wire for applying a voltage to the sample is provided in the sample chamber.

This FIB device is installed in the sample holder 110 and is installed near the sample 111 set in the sample chamber.
Book hollow ports 112 and 113 are provided. The sample 111 is passed through the inside of each hollow port 112, 113.
Fine conductors 130a and 130b are arranged in the vicinity of. In order to maintain the vacuum of the sample chamber 120 of the FIB device, a hollow port 112 penetrating the wall of the sample chamber 120,
An O-ring 121 is arranged around 113. Inside the hollow ports 112 and 113, the fine conductors 130a and 130
A conductor wire having a diameter larger than that of b is arranged, and the fine conductor wires 130a and 130b are detachably connected to the conductor wire in the hollow port in the same structure as described in FIGS. 2 and 3. The inner walls of the hollow ports 112 and 113 are coated with an insulating material or the conductive wire is coated with an insulating material to prevent a short circuit between the conductive wire and the hollow port. Two fine conductors 130a from each port 112, 113,
In order to easily attach the tip of 130b to the sample 111,
The distance between the tips of the ports 112 and 113 is determined. The fine wiring of the sample 111 includes two fine conducting wires 130.
The tip portions of a and 130b are fixed to the cross section of the sample 111 from both sides by a W deposition film using a W deposition gun 23. The terminal end of the lead wire extended to the outside of the FIB device is connected to the voltage power supply 118, and the voltage power supply 118 is connected to the voltage power supply control unit 119.

In the above-mentioned embodiment, a tip of the fine conducting wire is provided with a conical tip made of the same material as the fine conducting wire and having a diameter larger than that of the fine conducting wire, and the tip of the tip is made to have a diameter of 0.
Although it was processed to have a size of 1 micron or less, the tip of the fine conductor wire itself may be processed using a focused ion beam without using a conical tip.

[0035]

According to the present invention, a charged particle beam apparatus is used to directly apply a voltage to a minute wiring portion of a device,
By observing the change, it becomes possible to directly observe the phenomenon that occurs in the actual device due to voltage application,
This makes it possible to elucidate the mechanism of failure occurrence due to voltage, making it easier to understand the cause of failure.

[Brief description of drawings]

FIG. 1 is a schematic view showing an example of a focused ion beam (FIB) device used in the present invention.

FIG. 2 is a schematic configuration diagram of a tip portion of an example of a sample holder according to the present invention.

FIG. 3 is a detailed view showing a connection structure for fixing the tip portion of the fine conductor wire to the conductor wire.

FIG. 4 is a schematic view of a sample holder for fixing a sample table on which a sample is attached to a sample holder.

FIG. 5 is a detailed view of a sample voltage applying section.

FIG. 6 is a diagram illustrating an example of a sample analysis method according to the present invention.

FIG. 7 is a diagram illustrating an example of a sample analysis method according to the present invention.

FIG. 8 is a schematic view of a sample holder on which a sample table is set.

FIG. 9 is a diagram illustrating an example of a sample analysis method according to the present invention.

FIG. 10 is a diagram illustrating an example of a sample analysis method according to the present invention.

FIG. 11 is a diagram illustrating an example of a sample analysis method according to the present invention.

FIG. 12 is an explanatory diagram of a state in which a voltage is applied to the wiring portion of the sample micro piece.

FIG. 13 is a schematic diagram illustrating an example of a phenomenon observed by the method of the present invention.

FIG. 14 is a diagram illustrating another example of the sample analysis method according to the present invention.

FIG. 15 is a schematic view of a sample chamber of an FIB device in which a fine conductor wire is provided in the sample chamber.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... FIB apparatus, 2 ... Ion gun, 3 ... Condenser lens, 4 ... Aperture, 5 ... Deflector, 6 ... Objective lens, 7 ... Sample fine movement mechanism, 8 ... Sample holder, 9 ... Secondary electron detector, 10
... Focused ion beam, 11 ... Sample, 12 ... Fine motion control unit,
14 ... Monitor, 15 ... Deflection signal controller, 16 ... CP
U, 18 ... Voltage power supply, 19 ... Voltage power supply control unit, 20 ... Manipulator, 21 ... Manipulator drive unit, 22 ... Manipulator drive control unit, 23 ... Deposition gun, 30
a, 30b ... Fine conductor wire, 31 ... Groove, 32a, 32b ... Tube, 33a, 33b ... Conductor wire, 36 ... Sample stage receiving portion,
38 ... Sample pressing spring, 39a, 39b ... Chip, 40
… Sample holder, 41, 42… Tapered part, 60… LSI
Samples, 61a to 61d ... Marking, 72 ... Micro sample piece, 80 ... Sample stage, 90 ... Micro sample piece, 91 ... Metal wiring, 92, 93 ... Metal nitride film, 94 ... Crystal grain, 95 ... Crystal grain boundary, 96 … Cavity, 100… Sample, 110… Sample holder, 111… Sample

   ─────────────────────────────────────────────────── ─── Continued front page    (72) Inventor Takeo Ueno             1040 Ichimo, Ichima, Hitachinaka City, Ibaraki Prefecture             Inside the company Hitachi Science Systems (72) Inventor Hidemi Koike             882 Ichige, Ichima, Hitachinaka City, Ibaraki Prefecture             Ceremony company Hitachi measuring instruments group F-term (reference) 2G001 AA03 AA05 BA07 BA11 CA03                       GA06 GA09 GA11 HA13 JA02                       JA03 QA01 QA02 QA10                 2G052 AA13 AC28 AD12 AD32 AD52                       CA04 DA33 GA33 JA04                 2G132 AA00 AE02 AF12 AF13 AL11                       AL12                 5C001 AA01 BB06 BB07 CC03

Claims (11)

[Claims] 1. A sample holder equipped with a means for holding a sample stage having a sample attached thereto, the sample holder being mounted in the charged particle beam device such that the sample attached to the sample stage is located on the optical axis of the charged particle beam device. In the sample holder, the tip for applying a voltage to a predetermined portion of the sample has a pair of fine conductive wires that can move freely. 2. The sample holder according to claim 1, wherein a pair of conductive wires that pass through a shaft portion of the sample holder and are connected to an external power source, and the pair of fine conductive wires are attached to and detached from the ends of the pair of conductive wires, respectively. And a means for freely connecting the sample holder. 3. The sample holder according to claim 1, wherein a part of the fine conductor wire has a coil shape. 4. A step of extracting a micro sample piece from a sample, a step of fixing the micro sample piece to a sample holder, and a pair of micro conductive wires can be energized to predetermined locations of the micro sample piece fixed to the sample holder. A sample, a step of applying a voltage to the pair of fine conductors, and a step of measuring a current flowing through the pair of fine conductors to the predetermined location of the micro sample piece. Analysis method. 5. A step of extracting a micro sample piece from a sample, a step of fixing the micro sample piece to a sample holder, and a pair of micro conducting wires can be energized to predetermined locations of the micro sample piece fixed to the sample holder. A step of attaching the sample holder to which the micro sample piece to which the pair of fine conductor wires are attached is fixed to a charged particle beam device, and the step of attaching the micro sample piece to the charged particle beam device via the pair of fine conductor wires. Observing the said predetermined part of the said micro sample piece with the said charged particle beam device, applying a voltage to a predetermined part, The sample analysis method characterized by the above-mentioned. 6. The sample analysis method according to claim 4 or 5, wherein the step of extracting the micro sample piece from the sample is a step of extracting the micro sample piece from the sample by processing using a focused ion beam. A sample analysis method characterized by the above. 7. The sample analysis method according to claim 4 or 5, wherein the step of extracting the micro sample piece from the sample is a step of extracting the micro sample piece from the sample by machining. Analysis method. 8. The sample analysis method according to claim 5, wherein
The charged particle beam device is a transmission electron microscope, and a sample analysis characterized by observing an electron beam transmission image of the predetermined location while applying a voltage to the predetermined location of the micro sample piece through the fine conducting wire. Method. 9. The sample analysis method according to claim 4, wherein the step of attaching the pair of fine conductive wires to the micro sample piece so that electricity can flow is the tip portion of the fine conductive wire or the fine conductive wire. A step of finely processing the tip of the tip fixed by a focused ion beam; a step of moving the finely processed fine conductor wire or the tip of the tip to a predetermined position on the micro sample piece; Fixing the tip of the fine conductor wire or the tip at a predetermined position on the minute sample piece. 10. The method for analyzing a sample according to claim 9, wherein the step of moving the tip end of the finely processed fine conductor wire or chip to a predetermined position on the minute sample piece comprises:
Three axes (X, Y, Z) provided in the focused ion beam device
A sample analysis method, wherein a drivable manipulator tip portion is fixed to the fine conductor wire or a part of a chip by beam assist deposition, and the manipulator is moved. 11. A focused ion beam device equipped with 3
Fixing the tip of the manipulator capable of driving the axis (X, Y, Z) to the first fine conductor wire or a part of the first chip fixed to the first fine conductor wire by beam assist deposition; Moving the manipulator to move the tip of the first fine conductor or the tip of the first chip to a predetermined position on the sample; and the beam assist deposition to move the first fine conductor or the first fine conductor to a predetermined position in the sample. Attaching the tip of the first chip and attaching the tip of the second chip fixed to the second fine conductor or the second fine conductor to a predetermined position in the sample by repeating the above steps A step of applying a voltage between the first fine conductor wire and the second fine conductor wire, and a current flowing through the sample via the first fine conductor wire and the second fine conductor wire. Sample analysis method characterized by comprising the step of constant.