WO2021100132A1

WO2021100132A1 - Lamellar grid and analysis system

Info

Publication number: WO2021100132A1
Application number: PCT/JP2019/045375
Authority: WO
Inventors: 淳澤田; 恒典野間口
Original assignee: 株式会社日立ハイテク
Priority date: 2019-11-20
Filing date: 2019-11-20
Publication date: 2021-05-27

Abstract

The present invention prevents an analysis unit 11 of a lower lamellar body 10 from being damaged by an upper lamellar body 10 when a plurality of lamellar bodies 10 are transported to a lamellar grid 20. The lamellar grid 20 has: a substrate 21; and a supporting part 22 (pillars 22a-22d) that protrudes from the substrate 21 in a Z direction. For example, by providing a plurality of stages 23 to the pillars 22a-22d, the width of each of the pillars 22a-22d in the X direction becomes smaller as the distance increases from the substrate 21 in the Z direction.

Description

Lamella grid and analysis system

The present invention relates to a lamella grid and an analysis system, and in particular, can be suitably used for a lamella grid for mounting a lamella to be analyzed using a charged particle beam device, and an analysis system to which the lamella grid is applied.

In the field of semiconductor devices, performance has been improved by miniaturization according to Moore's Law. However, in recent years, the limit of miniaturization is approaching, and the use of new materials to replace silicon such as compound semiconductors or graphene, the promotion of three-dimensional structure, and technologies for improving device performance by methods other than miniaturization have been introduced. Attention has been paid.

With these new efforts, the importance of technology for analyzing the interface state and laminated structure between dissimilar materials is increasing. For example, conventional analysis techniques include surface observation using an optical microscope or a scanning electron microscope (SEM), but these surface observations can analyze accurate interface states and laminated structures. It's getting harder.

Therefore, a lamella (thin sample) is prepared from a part of the wafer by a focused ion beam (FIB) device, and the lamella is transported to the lamella grid by the lamella transfer device or the above FIB device to obtain high-resolution electrons. A method of analyzing the lamella on the lamella grid is performed by a microscope. High-resolution electron microscopes (charged particle beam devices) include, for example, SEMs, transmission electron microscopes (TEMs) or scanning transmission electron microscopes (STEMs).

On the other hand, generally when transporting lamella using a lamella grid, the lamella is fixed to the lamella grid using deposition. For example, Patent Document 1 discloses a technique for mounting a plurality of lamellas on one lamella grid by deposition. Further, Patent Document 2 discloses a method using a fitting shape as a method for fixing a lamella without using deposition.

Japanese Unexamined Patent Publication No. 2015-204296 JP-A-2009-115582

It is desired to evaluate the quality of the wafer by automatically performing a series of steps to acquire the interface information and the laminated structure in the wafer. For example, if it is possible to construct an analysis system in which a plurality of lamellas are manufactured from one wafer, a plurality of lamellas are collectively mounted on one lamella grid, and a plurality of lamellas are collectively analyzed by a charged particle beam device. , The throughput of wafer quality evaluation can be improved.

In Patent Document 1, it is possible to transport a large number of lamellas, and a plurality of lamellas are fixed to the lamella grid by using deposition. However, since deposition has a problem that it takes time and a problem of sample contamination, a lamella fixing method that does not use deposition is desired in the quality evaluation of wafers.

Patent Document 2 does not use deposition, so it can be transported in a short time and there is little sample contamination. However, in order to transport a large number of lamellas, it is necessary to increase the number of support portions by the number of lamellas to be transported. In a generally used lamella grid having a diameter of about 3 mm, only about 10 to 20 support portions can be provided. Therefore, it is difficult to transport a large number of lamellas by one lamella grid.

For the above reasons, a technique for transporting a plurality of lamellas by one lamella grid without using deposition is desired, and a technique for improving the throughput of wafer quality evaluation is desired.

FIG. 1 is a front view showing an outline of the lamella 10 and the lamella grid 20 examined by the inventors of the present application. 2 and 3 are perspective views of the main parts showing the lamella 10 and the lamella grid 20 of Study Example 1 and Study Example 2, and show the structure in the vicinity of the support portion 22, which is a region surrounded by a circle in FIG. There is.

As shown in FIG. 1, the lamella grid 20 includes a half-moon-shaped substrate 21 and a plurality of support portions 22 protruding from the surface of the substrate 21 in the Z direction, and each of the plurality of support portions 22 has a lamella. 10 is installed.

In Study Example 1 shown in FIG. 2, one lamella 10 is mounted on one support portion 22. The support portion 22 is composed of columns 22a to 22d, and the columns 22a to 22d project from the upper surface of the substrate 21 in the Z direction. The lamella 10 is sandwiched between the support column 22a and the support column 22b, and between the support column 22c and the support column 22d. Further, an analysis unit 11 to be analyzed later in the charged particle beam apparatus is provided on the upper portion of the lamella 10.

In Study Example 1, as shown in FIG. 2, only one lamella 10 can be conveyed by one support portion 22. Therefore, it is difficult to improve the throughput of wafer quality evaluation.

In Study Example 2 shown in FIG. 3, a plurality of lamellas 10 (10a, 10b) can be conveyed by increasing the height of the support portion 22. However, in the structure of Study Example 2, since the bottom portion of the upper lamella 10b is close to the analysis unit 11 of the lower lamella 10a, the analysis unit 11 may be damaged. Further, during analysis performed using a charged particle beam device such as a TEM device, the substance constituting the bottom of the upper lamella 10b may interfere with the analysis of the analysis section 11 of the lower lamella 10a. For these reasons, it may be difficult to obtain an accurate observation image.

Summarizing the above, it is desirable to develop lamellas and lamella grids that suppress damage to the analysis unit when multiple lamellas are mounted on the lamella grid. Further, it is desired to construct an analysis system capable of producing and transporting such lamellae.

Other issues and new features will become apparent from the description and accompanying drawings of this specification.

Among the embodiments disclosed in the present application, a brief outline of typical ones is as follows.

The lamella grid in one embodiment has a substrate and a first strut, a second strut, a third strut, and a fourth strut projecting from the surface of the substrate in the first direction, respectively. Here, the first strut is separated from the second strut in the second direction orthogonal to the first direction, and the third strut is separated from the second strut in the third direction orthogonal to the first direction and the second direction. The second column is separated from the fourth column in the third direction, and the third column is separated from the fourth column in the second direction. Further, the width of each of the first strut, the second strut, the third strut, and the fourth strut in the third direction becomes smaller as the distance from the substrate increases in the first direction.

The lamella grid in one embodiment has a substrate and a first strut, a second strut, a third strut, and a fourth strut projecting from the surface of the substrate in the first direction, respectively. Here, the first strut is separated from the second strut in the second direction orthogonal to the first direction, and the third strut is separated from the second strut in the third direction orthogonal to the first direction and the second direction. The second column is separated from the fourth column in the third direction, and the third column is separated from the fourth column in the second direction. Further, the second strut is provided with a plurality of first convex portions so as to project toward the first strut and not come into contact with the first strut, and the fourth strut is provided with the third strut. A plurality of second convex portions are provided so as to project to the side and not to come into contact with the third support column.

The analysis system in one embodiment includes a lamella manufacturing mechanism and a lamella transport mechanism, and (a) in the lamella manufacturing mechanism, by etching a part of the wafer, at least a first analysis unit is provided. It has a step of producing a lamella and a second lamella having a second analysis unit, and (b) a step of sequentially transporting the first lamella and the second lamella from the wafer to the lamella grid in the lamella transport mechanism. .. Here, the lamella grid includes a substrate and a first strut, a second strut, a third strut, and a fourth strut projecting from the surface of the substrate in the first direction, respectively. Further, the first strut is separated from the second strut in the second direction orthogonal to the first direction, and is separated from the third strut in the first direction and the third direction orthogonal to the second direction. Separated, the second column is separated from the fourth column in the third direction, and the third column is separated from the fourth column in the second direction. Further, the width of each of the first strut, the second strut, the third strut, and the fourth strut in the third direction becomes smaller as the distance from the substrate increases in the first direction. Further, the first lamella includes a first narrow width region and a first thick width region, and the width of the first narrow width region in the second direction is between the first strut and the second strut. The width of the first thickness region in the second direction, which is smaller than the first distance and the second distance between the third strut and the fourth strut, is the first distance and the second distance. Greater than. Further, the second lamella includes a second narrow region and a second thick region, and the width of the second narrow region in the second direction is smaller than the first distance and the second distance. The width of the second thickness region in the second direction is larger than the first distance and the second distance. Further, the width of the first narrow width region in the third direction is different from the width of the second narrow width region in the third direction, and the width of the first thick width region in the third direction is the first. Unlike the width of the two-thickness region in the third direction, the width of each of the first analysis unit and the second analysis unit in the second direction is the width of the first narrow width region and the second narrow width region. It is smaller than the width in the second direction. Further, in the step (b), the first narrow width region (b1) is inserted between the first strut and the second strut, and between the third strut and the fourth strut. Step, (b2) After the step (b1), the first strut and the second strut are formed in the second narrow region so that the second lamella is separated from the first lamella in the first direction. It has a step of inserting between and between the third strut and the fourth strut.

According to one embodiment, a plurality of lamellas can be conveyed by one lamella grid, and the throughput of wafer quality evaluation can be improved. Further, at that time, it is possible to provide a lamella and a lamella grid that suppress damage to the analysis unit. Further, it is possible to provide an analysis system capable of producing and transporting such a lamella.

It is a front view which shows the lamella and the lamella grid in Embodiment 1, Study Example 1 and Study Example 2. It is a main part perspective view which shows the lamella and the lamella grid in Study Example 1. FIG. It is a main part perspective view which shows the lamella and the lamella grid in Study Example 2. It is a main part perspective view which shows the lamella grid in Embodiment 1. FIG. It is a main part perspective view which shows the lamella in Embodiment 1. FIG. It is a main part perspective view which shows the lamella and the lamella grid in Embodiment 1. FIG. It is a schematic diagram which shows the analysis system in Embodiment 1. FIG. It is a schematic diagram which shows the lamella production mechanism in Embodiment 1. FIG. It is a schematic diagram which shows the lamella transport mechanism in Embodiment 1. FIG. It is a schematic diagram which shows the lamella analysis mechanism in Embodiment 1. FIG. It is a schematic diagram which shows the network configuration in Embodiment 1. FIG. It is a processing flow diagram of the analysis system in Embodiment 1. FIG. It is a main part perspective view which shows the manufacturing method of the lamella in Embodiment 1. FIG. It is a main part perspective view which shows the transport method of the lamella in Embodiment 1. FIG. It is a main part perspective view which shows the transport method of the lamella following FIG. It is a main part perspective view which shows the lamella grid in Embodiment 2. FIG. It is a main part perspective view which shows the lamella in Embodiment 2. It is a main part perspective view which shows the lamella and the lamella grid in Embodiment 2. FIG. It is a main part perspective view which shows the lamella grid in Embodiment 3. FIG. It is a main part perspective view which shows the lamella and the lamella grid in Embodiment 3. FIG. It is a main part perspective view which shows the lamella grid in Embodiment 4. FIG. It is a main part perspective view which shows the lamella and the lamella grid in Embodiment 4. FIG. It is a main part perspective view which shows the lamella grid in Embodiment 5. It is a main part perspective view which shows the lamella grid in Embodiment 6. It is a main part perspective view which shows the lamella and the lamella grid in Embodiment 6. It is a main part perspective view which shows the transport method of the lamella in Embodiment 6. It is a side view which shows the transport method of the lamella in Embodiment 6. FIG. 6 is a perspective view of a main part showing a method of transporting lamella following FIG. 26. It is a side view which shows the transport method of the lamella following FIG. FIG. 8 is a perspective view of a main part showing a method of transporting lamella following FIG. 28. It is a side view which shows the transport method of the lamella following FIG.

Hereinafter, the embodiment will be described in detail based on the drawings. In all the drawings for explaining the embodiment, the members having the same function are designated by the same reference numerals, and the repeated description thereof will be omitted. Further, in the following embodiments, the description of the same or similar parts is not repeated in principle except when it is particularly necessary.

Further, the X direction, the Y direction, and the Z direction described in the present application are orthogonal to each other. In the present application, the Z direction may be described as an upward direction or a height direction of a certain structure. Further, the planes formed by the X direction and the Y direction form a plane, which is a plane perpendicular to the Z direction. The plane consisting of the Y direction and the Z direction forms a plane, which is a plane perpendicular to the X direction. The plane consisting of the X direction and the Z direction forms a plane, and is a plane perpendicular to the Y direction. For example, in the present application, when the term "planar view viewed from the Y direction" is used, it means that the plane consisting of the X direction and the Z direction is viewed from the Y direction.

(Embodiment 1)
<Structure of lamella 10 and lamella grid 20>

The rough structure of the lamella 10 and the lamella grid 20 in the first embodiment is as shown in FIG. 4 and 5 are perspective views of the main parts showing the lamella grid 20 and the lamella 10 in the first embodiment, respectively, and FIG. 6 is a main part showing how the three lamella 10s are mounted on the lamella grid 20. It is a perspective view. In the first embodiment, three lamellas 10 are illustrated, but by changing the shape (height) of the lamella grid 20, the number of lamellas 10 mounted on the lamella grid 20 can be increased to two. It may be four or more. That is, the lamella grid 20 can mount a plurality of lamellas 10.

As shown in FIG. 1, the lamella grid (TEM grid, lamella carrier) 20 includes a half moon type substrate 21 and a plurality of support portions (gap portions) 22 protruding from the surface of the substrate 21 in the Z direction. , A plurality of lamellas 10 are mounted on each of the plurality of support portions 22. The substrate 21 including the plurality of support portions 22 may be made of one material such as silicon, but the portion of the substrate 21 where the plurality of support portions 22 are provided and the periphery thereof are the substrate 21. It may be composed of a material different from the material constituting the above. For example, most of the substrate 21 may be made of copper, and the plurality of support parts 22 and their surroundings may be made of silicon.

As shown in FIGS. 4 and 6, the support portion 22 is composed of columns 22a to 22d, and the columns 22a to 22d project from the surface of the substrate 21 in the Z direction and extend in the Z direction. .. One lamella grid 20 is provided with, for example, 4 to 20 support portions 22 including such columns 22a to 22d.

The lamella 10 is supported by a support portion 22 forming a gap portion. Specifically, the lamella 10 is sandwiched between the support column 22a and the support column 22b, and between the support column 22c and the support column 22d. The support portion 22 can support a plurality of lamellas 10, and here, three lamellas 10 are adjacent to each other in the Z direction and are supported by the support portion 22.

As shown in FIG. 4, the support column 22a is separated from the support column 22b in the Y direction, and the support column 22c is separated from the support column 22d in the Y direction. Further, the support column 22a and the support column 22b are separated from the support column 22c and the support column 22d in the X direction. The distance between the support column 22a and the support column 22b and the distance between the support column 22c and the support column 22d are indicated by the distance L1.

A plurality of stairs 23 (23a to 23c) are provided on each of the columns 22a to 22d. Each of the stairs 23a to 23c is composed of a side surface which is a surface viewed from the X direction and an upper surface which is a surface viewed from the Z direction. In the present application, the case where the angle of the stairs 23a to 23c (the angle formed by the side surface and the upper surface) is a right angle is illustrated, but the angle of the stairs 23a to 23c is not limited to a right angle, but is an obtuse angle and an acute angle. The case is also acceptable.

In the X direction, the stairs 23a to 23c of the support column 22a are formed on the opposite side of the support column 22c, the stairs 23a to 23c of the support column 22b are formed on the side opposite to the support column 22d, and the stairs 23a to 23c of the support column 22c are opposite to the support column 22a. The stairs 23a to 23c of the support column 22d are formed on the side opposite to the support column 22b.

Due to such stairs 23a to 23c, the width of each of the columns 22a to 22d in the X direction changes as the distance from the substrate 21 in the Z direction increases, and the width gradually decreases. For example, at the location closest to the substrate 21, each of the columns 22a-22d has a width W1 and each of the columns 22a-22d has a width W2 or a width W3 as it moves away from the substrate 21 in the Z direction. There is. The width W1 is larger than the width W2, and the width W2 is larger than the width W3.

As shown in FIG. 5, the lamella 10 is a flaky sample whose width in the Y direction is thinner than the width in the X direction and the width in the Z direction, and as will be described later, a part of the wafer 1 is etched. It is made by. An analysis unit 11 is provided above the lamella 10 in the Z direction. The analysis unit 11 is a region to be analyzed later in the lamella analysis mechanism, and the width of the analysis unit 11 is smaller than the width of the lamella 10 around it in the Y direction.

The lamella 10 has a thin region A1 having a relatively small width in the Y direction and a thick region A2 having a relatively large width in the Y direction. In the first embodiment, the analysis unit 11 is provided in the narrow region A1. The narrow region A1 has a width W4 in the X direction and a width W6 in the Y direction, the thick region A2 has a width W5 in the X direction and a width W7 in the Y direction, and the width W7 is larger than the width W6. large. Further, by appropriately designing the values of the width W4 and the width W5, it is possible to form a plurality of lamellas 10 having different shapes in the thick width region A2. The width of the analysis unit 11 in the Y direction is smaller than the width W6 of the thin width region A1 and the width W7 of the thick width region A2.

Further, the width W6 of the thin width region A1 is smaller than the distance L1 between the support column 22a and the support column 22b and the distance L1 between the support column 22c and the support column 22d. The width W7 of the thick region A2 is larger than the distance L1 between the columns 22a and the columns 22b and the distance L1 between the columns 22c and the columns 22d. Due to such a relationship, the lamella 10 is firmly held by the lamella grid 20.

As shown in FIG. 6, a plurality of lamellas 10 (10a to 10c) are mounted on the lamella grid 20 so as to be separated from each other in the Z direction. Further, when the analysis is performed by the lamella analysis mechanism, the analysis is performed in a state where a plurality of lamellas 10 are mounted on the lamella grid 20. Therefore, the analysis unit 11 does not overlap the support unit 22 (supports 22a to 22d) and is exposed from the support unit 22 in a plan view viewed from the Y direction so that the analysis unit 11 is not obstructed by the support unit 22. doing.

The width W4 of the thin width region A1 and the width W5 of the thick width region A2 are adjusted so that the lamellas 10a to 10c fit the widths W1 to W3 of the columns 22a to 22d, respectively. Here, the width W4 of the lamella 10b is smaller than the width W4 of the lamella 10a and larger than the width W4 of the lamella 10c. Further, the width W5 of the lamella 10b is larger than the width W5 of the lamella 10a and smaller than the width W5 of the lamella 10c.

Each narrow region A1 of the lamellas 10a to 10c is fitted between the support column 22a and the support column 22b, and between the support column 22c and the support column 22d. The thick region A2 of the lamella 10a is mounted on the substrate 21, the thick region A2 of the lamella 10b is mounted on the stairs 23a, and the thick region A2 of the lamella 10c is mounted on the stairs 23b. As described above, the lamellas 10a to 10c are mounted on the support portions 22 at locations having different widths such as widths W1 to W3.

Therefore, the lamella 10 is firmly held by the lamella grid 20 not only in the Y direction but also in the X direction. Therefore, it is possible to suppress the possibility that the position of the lamella 10 is displaced when the lamella grid 20 is conveyed while the lamella 10 is mounted on the lamella grid 20.

As described above, according to the first embodiment, a plurality of lamellas 10 (10a to 10c) can be mounted on the lamella grid 20. Further, the height of each of the stairs 23a to 23c, that is, the width H1 of each of the stairs 23a to 23c in the Z direction is set longer than the width H2 of the lamellas 10a to 10c in the Z direction. Therefore, the lamellas 10a to 10c are separated from each other in the Z direction, and each analysis unit 11 is not in contact with the other lamellas 10. Therefore, it is possible to suppress the problem that the analysis unit 11 is damaged. Further, in the first embodiment, since the deposition is not used at the time of transportation to the lamella grid 20, the transportation can be performed in a short time and the sample contamination is small.

<Analysis system configuration>
Hereinafter, the configuration of the analysis system 30 capable of producing, transporting, and analyzing the lamella 10 will be described with reference to FIGS. 7 to 10. FIG. 7 is a schematic diagram showing the analysis system 30 according to the first embodiment. The analysis system 30 has a lamella production mechanism, a lamella transport mechanism, and a lamella analysis mechanism. As shown in FIG. 7, a lamella production device 40 is used as the lamella production mechanism, a lamella production device 40 or a lamella transfer device 60 is used as the lamella transfer mechanism, and a lamella analysis device is used as the lamella analysis mechanism. 70 is used.

The analysis system 30 receives the wafer 1 from the semiconductor production line 2, and returns the wafer 1 after the production and transfer of the lamella 10 to the semiconductor production line 2. As will be described in detail later, the production of the lamella 10 is performed by the lamella production device 40, and the transfer of the lamella 10 to the lamella grid 20 is performed by the lamella production device 40 or the lamella transfer device 60. After that, the analysis of the lamella 10 is performed by the lamella analyzer 70, and the analysis result of the lamella 10 is provided as the analysis data D4.

Further, during the transfer work performed between the semiconductor manufacturing line 2, the lamella manufacturing apparatus 40, the lamella transport apparatus 60, and the lamella analyzer 70, the wafer 1, the lamella 10, and the lamella grid 20 are filled with an inert gas such as nitrogen. It is stored inside a container (FOUP) and taken out of the container inside each device after the transfer is completed.

The wafer 1 in the first embodiment is formed on a semiconductor substrate on which a p-type or n-type impurity region is formed, a semiconductor element such as a transistor formed on the semiconductor substrate, and the semiconductor element. It is composed of a wiring layer and the like. Further, the state of the wafer 1 includes the case where the semiconductor substrate, the semiconductor element, the wiring layer, and the like are completed, and also includes the case where these are in the process of being manufactured. Since the lamella 10 is a thin piece obtained from a part of the wafer 1, the structure of the lamella 10 includes all or a part of the semiconductor substrate, the semiconductor element, and the wiring layer. Further, although the first embodiment describes the wafer 1 mainly manufactured on the semiconductor manufacturing line 2, the wafer 1 may be a structure used other than the semiconductor technology.

The detailed structures of the lamella manufacturing apparatus 40, the lamella transport apparatus 60, and the lamella analysis apparatus 70, which are the main components of the analysis system 30, will be described below.
<Lamera making device>

FIG. 8 is a schematic view showing the lamella manufacturing apparatus 40 according to the first embodiment. The lamella production device 40 includes at least a lamella production mechanism, and is composed of a charged particle beam device such as a FIB-SEM device.

The lamella manufacturing apparatus 40 includes an ion beam column 41, an electron beam column 42, a sample chamber 43, a wafer stage 44, a wafer retainer 45, a charged particle detector 46, a detacher 47, a lamella grid stage 48, a lamella grid retainer 49, and various controls. Parts C1 to C7 are provided. Further, an input device 50 and a display 51 are provided inside or outside the lamella manufacturing apparatus 40.

The ion beam column 41 includes an ion source for generating an ion beam (charged particle beam) IB, a lens for focusing the ion beam IB, a deflection system for scanning and shifting the ion beam IB, and the like. , Includes all components required as a FIB device. Gallium ions are generally used as the ion beam IB, but the ion species may be appropriately changed depending on the purpose of processing and observation. Further, the ion beam IB is not limited to the focused ion beam, and may be a broad ion beam.

The ion beam column control unit C1 controls the ion beam column 41. For example, the generation of the ion beam IB from the ion source and the driving of the deflection system are controlled by the ion beam column control unit C1.

The electron beam column 42 includes an electron source for generating an electron beam (charged particle beam) EB1, a lens for focusing the electron beam EB1, and a deflection system for scanning and shifting the electron beam EB1. , Includes all components required as an SEM device.

The electron beam column control unit C2 controls the electron beam column 42. For example, the generation of the electron beam EB1 from the electron source and the driving of the deflection system are controlled by the electron beam column control unit C2.

The ion beam IB that has passed through the ion beam column 41 and the electron beam EB1 that has passed through the electron beam column 42 are mainly crosspoint CP1 that is an intersection of the optical axis OA1 of the ion beam column and the optical axis OA2 of the electron beam column. Is focused on.

Further, in the first embodiment, the ion beam column 41 is arranged vertically and the electron beam column 42 is arranged in an inclined manner, but the present invention is not limited to this, and the ion beam column 41 is arranged in an inclined manner and the electron beam column 42 is arranged vertically. It may be arranged. Further, both the ion beam column 41 and the electron beam column 42 may be inclined.

Further, the ion beam column 41 and the electron beam column 42 may be composed of a triple column provided with a gallium focused ion beam column, an argon focused ion beam column and an electron beam column instead of these.

Further, the lamella manufacturing apparatus 40, which is a charged particle beam apparatus, may include only the ion beam column 41 or may include only the electron beam column 42. In other words, the lamella manufacturing apparatus 40 may be provided with either or both of the ion beam column 41 and the electron beam column 42, provided that the wafer 1 can be processed and observed. That is, the lamella manufacturing apparatus 40 may be provided with a charged particle beam column. Further, the electron beam column 42 is not limited to the SEM device, and may be a TEM device or a STEM device for observing using electrons that have passed through the sample.

The wafer stage 44 is provided in the sample chamber 43 at a position where the wafer 1 is irradiated with the ion beam IB and the electron beam EB1. The drive of the wafer stage 44 is controlled by the wafer stage control unit C3. Therefore, the wafer stage 44 can perform planar movement, vertical movement, rotational movement, and tilt movement.

The wafer stage 44 is provided with a wafer retainer 45 for fixing the wafer 1, and the wafer 1 is fixed to the wafer stage 44 via the wafer retainer 45. By driving the wafer stage 44, the position and orientation of the wafer 1 can be freely changed. The wafer stage 44 is moved so that, for example, a desired portion on the wafer 1 is located at the irradiation position of the ion beam IB or the irradiation position of the electron beam EB1.

The charged particle detector 46 detects charged particles generated when the wafer 1 or the lamella 10 is irradiated with the ion beam IB and the electron beam EB1. Further, the lamella manufacturing apparatus 40 may be provided with a composite charged particle detector capable of detecting not only electrons but also ions as the charged particle detector 46.

The detector control unit C4 controls the charged particle detector 46. The detector control unit C4 includes a circuit or an arithmetic processing unit that arithmetically processes and images the detection signal from the charged particle detector 46.

The detachable device 47 is provided in the sample chamber 43 so that the detachable device 47 can reach the position where the ion beam IB and the electron beam EB1 are irradiated. The drive of the detachable device 47 is controlled by the detachable device control unit C5. As a result, the detachable device 47 can perform planar movement, vertical movement, and rotational movement. By driving the detachable device 47, the lamella 10 can be taken out from the wafer 1 and the lamella 10 can be conveyed to the lamella grid 20.

Although nanotweezers are exemplified as the attachment / detachment device 47 in the first embodiment, the attachment / detachment device 47 may be a microprobe. In that case, the microprobe is also controlled by the attachment / detachment control unit C5.

The lamella grid stage 48 is provided with a lamella grid retainer 49 for fixing the lamella grid 20, and the lamella grid 20 is fixed to the lamella grid stage 48 via the lamella grid retainer 49. The drive of the lamella grid stage 48 is controlled by the lamella grid stage control unit C6. Therefore, the lamella grid stage 48 can perform planar movement, vertical movement, rotational movement, and tilt movement. The lamella 10 is taken out from the wafer 1 by the detachable device 47 and conveyed to the lamella grid 20.

The integrated control unit C7 can communicate with each other of the ion beam column control unit C1, the electron beam column control unit C2, the wafer stage control unit C3, the detector control unit C4, the attachment / detachment control unit C5, and the lamella grid stage control unit C6. It controls the operation of the entire lamella manufacturing apparatus 40. The integrated control unit C7 controls each of the control units C1 to C6 according to an instruction from the user by the input device 50 or a preset condition, and the pattern is written or analyzed on the wafer 1 on each of the control units C1 to C6. Have them observe. Further, the integrated control unit C7 includes a storage unit (not shown) for storing information and the like received from the control units C1 to C6 of the lamella manufacturing apparatus 40.

In the present application, for the sake of clarity, the control units C1 to C6 are individually shown near the control targets related to each, but the control units C1 to C6 and the integrated control unit C7 are one. It may be grouped as a control unit. Therefore, in the present application, the control unit having all or a part of the control units C1 to C7 may be simply referred to as a "control unit". It should be noted that such a mode is the same for the control units C2 to C6 and C8, which will be described later, and the control units C9 to C14.

In the input device 50, for example, the user inputs instructions such as inputting information to be analyzed, changing the irradiation conditions of the ion beam IB and the electron beam EB1, and changing the positions of the wafer stage 44 and the lamella grid stage 48. Device for. The input device 50 is, for example, a keyboard or a mouse.

The GUI screen 52 and the like are displayed on the display 51. The GUI screen 52 is a screen for controlling each configuration of the lamella manufacturing apparatus 40. When various instructions are input to the GUI screen 52 by the input device 50, the above instructions are transmitted to the integrated control unit C7. As the GUI screen 52, the display 51 displays, for example, a screen for inputting information to be analyzed, a screen showing the state of each configuration of the lamella manufacturing apparatus 40, and information (including an image) to be analyzed acquired by observation. A screen, an instruction screen for changing the irradiation conditions of the ion beam IB and the electron beam EB1, an instruction screen for changing the positions of the wafer stage 44 and the lamella grid stage 48, and the like can be displayed. One display 51 may be provided, or a plurality of displays 51 may be provided. The display 51 may have the function of the input device 50 such as a touch panel.

In addition to the above, the sample chamber 43 may be equipped with a gas deposition unit (not shown). Each gas deposition unit has a control unit that controls its drive. The gas deposition unit is used to prepare or mark a protective film on a wafer 1 and stores depot gas that forms a deposit film by irradiation with charged particle beams. Depot gas can be supplied from the tip of the nozzle as needed. Further, the sample chamber 43 may be equipped with a decompression device for vacuum exhaust, a cold trap, an optical microscope, or the like. Further, the sample chamber 43 may be equipped with other detectors such as a tertiary electron detector, a STEM detector, a backscattered electron detector or a low energy loss electron detector.

As described above, the lamella manufacturing apparatus 40 has a lamella manufacturing mechanism for manufacturing a plurality of lamellas 10 from the wafer 1 and a lamella transport mechanism for transporting (mounting) the plurality of lamellas 10 to the lamella grid 20. .. In this case, as shown in FIG. 7, the lamella grid 20 on which the lamella 10 is mounted is transferred to the lamella analysis device 70 without going through the lamella transfer device 60 described later.

However, the lamella manufacturing apparatus 40 does not have to include the lamella transport mechanism. That is, the lamella manufacturing apparatus 40 may not include the attachment / detachment device 47, the attachment / detachment control unit C5, the lamella grid stage 48, the lamella grid retainer 49, and the lamella grid stage control unit C6 as constituent elements.

In that case, the lamella transport mechanism is included in the lamella transport device 60. Since a large amount of time is required to prepare the lamella 10 as compared with the transportation of the lamella 10, it is more efficient to transport the lamella 10 in the lamella transport device 60. For example, a plurality of lamella manufacturing devices 40 are prepared as a plurality of lamella manufacturing mechanisms in the analysis system 30, and a large number of lamellas 10 are manufactured from the plurality of wafers 1 in the plurality of lamella manufacturing devices 40. Meanwhile, in the lamella transport device 60, a plurality of lamellas 10 are sequentially transported from the wafer 1 processed by a certain lamella manufacturing device 40 to the lamella grid 20. By dedicating the lamella transfer device 60 as the lamella transfer mechanism, the throughput of wafer quality evaluation can be improved.

<Lamera transfer device>
FIG. 9 is a schematic view showing the lamella transport device 60 according to the first embodiment. The lamella transport device 60 includes at least a lamella transport mechanism, and is composed of a charged particle beam device such as an SEM device including, for example, two electron beam columns. Since many components of the lamella transport device 60 are the same as those of the lamella manufacturing device 40, detailed description thereof will be omitted here.

The lamella transport device 60 is configured by replacing the ion beam column 41 and the ion beam column control unit C1 of the lamella production device 40 with another electron beam column 61 and another electron beam column control unit C8.

Similar to the electron beam column 42, the electron beam column 61 scans the electron source for generating the electron beam (charged particle beam) EB2, the lens for focusing the electron beam EB2, and the electron beam EB2. , Includes all the components required for an SEM device, such as a deflection system for shifting.

The electron beam column control unit C8 controls the electron beam column 61. For example, the generation of the electron beam EB2 from the electron source and the driving of the deflection system are controlled by the electron beam column control unit C8.

Further, the electron beam EB1 that has passed through the electron beam column 42 and the electron beam EB2 that has passed through the electron beam column 61 are mainly crosses that are intersections of the optical axis OA2 of the electron beam column 42 and the optical axis OA3 of the electron beam column 61. Focus is on point CP2. Since the lamella transport device 60 includes the electron beam column 42 and the electron beam column 61, the wafer 1 and the lamella grid 20 can be confirmed from two directions.

In the first embodiment, two electron beam columns are used, but if the images of the wafer 1 and the lamella grid 20 can be observed from two directions, an ion beam column can be used instead of the two electron beam columns. , Optical microscope or laser microscope may be used.

The lamella transport device 60 has a lamella transport mechanism for transporting (mounting) the lamella 10 on the lamella grid 20. In this case, as shown in FIG. 7, the wafer 1 on which the lamella 10 is manufactured is transferred from the lamella manufacturing apparatus 40 to the lamella transport device 60, and the lamella grid 20 on which the lamella 10 is mounted is transferred from the lamella transport device 60. It is transferred to the lamella analyzer 70.

The lamella grid stage 48 in the lamella transport device 60 is also provided with a lamella grid retainer 49 for fixing the lamella grid 20, and the lamella grid 20 is fixed to the lamella grid stage 48 via the lamella grid retainer 49. The drive of the lamella grid stage 48 is controlled by the lamella grid stage control unit C6. Therefore, the lamella grid stage 48 can perform planar movement, vertical movement, rotational movement, and tilt movement.

At the wafer stage 44, a plurality of lamellas 10 are taken out from the wafer 1 by the attachment / detachment device 47, and at the lamella grid stage 48, the plurality of lamellas 10 are sequentially conveyed to the lamella grid 20 by the attachment / detachment device 47.

As described above, the lamella producing device 40 can include the lamella transport mechanism, but by dedicating the lamella transport device 60 as the lamella transport mechanism, the throughput of wafer quality evaluation can be improved.

<Lamera analyzer>
FIG. 10 is a schematic view showing the lamella analyzer 70 according to the first embodiment. The lamella analysis device 70 includes at least a lamella analysis mechanism, and is composed of a charged particle beam device such as a TEM device or a STEM device.

The lamella analyzer 70 includes an electron beam column 71, a sample stage 72, a sample exchange chamber 73, a charged particle detector 74, a charged particle detector 75, an X-ray detector 76, a sample chamber 77, and control units C9 to C14. .. Further, an input device 78 and a display 79 are provided inside or outside the lamella analysis device 70.

Further, inside the sample chamber 77, the sample SAM can be installed on the sample stage 72. The sample SAM includes a plurality of lamellas 10 and a lamella grid 20 as shown in FIG. 6, and the substance and structure of the analysis unit 11 of the lamella 10 are analyzed by the lamella analyzer 70. The sample SAM is installed sideways so that the front surface of the analysis unit 11 in FIG. 6 faces the electron beam column 71.

The electron beam column 71 is required as a TEM device or a STEM device, such as an electron source for generating an electron beam, a lens for focusing the electron beam, and a deflection system for scanning and shifting the electron beam. Includes all components. The electron beam that has passed through the electron beam column 71 irradiates the sample SAM.

The electron beam column control unit C9 controls the electron beam column 71. Specifically, the generation of the electron beam by the electron source of the electron beam column 71 and the driving of the deflection system are controlled by the electron beam column control unit C9. In the first embodiment, as shown in FIG. 10, the electron beam column 71 is arranged perpendicular to the sample SAM, but the present invention is not limited to this, and the electron beam column 71 is arranged with respect to the sample SAM. It may be arranged at an angle.

The sample stage 72 is provided in the sample chamber 77 so that the sample SAM can be irradiated with an electron beam. The sample exchange chamber 73 is a place for exchanging the sample SAM inserted into the sample chamber 77. The drive of the sample stage 72 is controlled by the sample stage control unit C10, and the sample stage 72 can be moved in a plane, vertically, or rotated. By driving the sample stage 72, the position and orientation of the sample SAM can be changed. For example, the sample stage 72 is moved so that the sample SAM is positioned at the irradiation position of the electron beam.

The charged particle detector 74 and the charged particle detector 75 detect the charged particles generated when the sample SAM is irradiated with the electron beam. As the charged particle detector 74 and the charged particle detector 75, a composite charged particle detector capable of detecting not only electrons but also ions may be used.

The detector control unit C11 controls the charged particle detector 74, and the detector control unit C12 controls the charged particle detector 75. The detector control unit C11 and the detector control unit C12 include a circuit or an arithmetic processing unit (not shown) that arithmetically processes and images the detection signal.

The X-ray detector 76 detects the X-rays emitted by the sample SAM. A mass spectrometer may be mounted instead of the X-ray detector 76.

The X-ray detector control unit C13 controls the X-ray detector 76. The X-ray detector control unit C13 includes a circuit or an arithmetic processing unit (not shown) that arithmetically processes and images the detection signal from the X-ray detector 76.

The sample chamber 77 may be equipped with a decompression device for vacuum exhaust, a cold trap, an optical microscope, or the like. Further, the sample chamber 77 may be equipped with other detectors such as a tertiary electron detector, a STEM detector, a backscattered electron detector or a low energy loss electron detector.

The integrated control unit C14 can communicate with each of the electron beam column control unit C9, the sample stage control unit C10, the detector control units C11 and C12, and the X-ray detector control unit C13, and operates the entire lamella analysis device 70. To control. The integrated control unit C14 controls each of the above control units according to an instruction from the user by the input device 78 or according to preset conditions, and causes the sample SAM to be analyzed and the like. Further, the integrated control unit C14 includes a storage unit (not shown) for storing information and the like received from each control unit of the lamella analysis device 70.

The input device 78 is a device for the user to input instructions such as changing the irradiation conditions of the electron beam or changing the position of the sample stage 72. The input device 78 is, for example, a keyboard or a mouse.

The GUI screen 80 and the like are displayed on the display 79. The GUI screen 80 is a screen for controlling the lamella analysis device 70. When various instructions are input to the GUI screen 80 by the input device 78, the above instructions are transmitted to the integrated control unit C14. The display 79 is a GUI screen 80, for example, a screen showing the state of each configuration of the lamella analysis device 70, a screen displaying sample information (including an image) acquired by the analysis, and information on the sample SAM obtained by the analysis. A screen for inputting an image, an instruction screen for changing the irradiation conditions of the electron beam, an instruction screen for changing the position of the sample stage 72, and the like can be displayed. One display 79 may be provided, or a plurality of displays 79 may be provided. The display 79 may have the function of an input device 78 such as a touch panel.

<Network configuration of analysis system>
FIG. 11 is a schematic diagram showing the network configuration 31 of the analysis system 30. The semiconductor manufacturing line 2, the lamella manufacturing apparatus 40, the lamella transport apparatus 60, the lamella analysis apparatus 70, and the server SV that manages data are electrically connected by a network 32. Therefore, various data can be exchanged between them. The server SV can hold the analysis position data D1, the lamella production position data D2, the lamella transport position data D3, and the analysis data D4.

The analysis position data D1 is data indicating a position on the wafer 1 where the cross-section analysis is scheduled to be performed. The lamella production position data D2 is data indicating a position on the wafer 1 where the lamella 10 has been successfully produced. The lamella transport position data D3 is data indicating the position of the lamella 10 transported on the lamella grid 20. The analysis data D4 is data including the analysis result, and is data including a detection signal of charged particles or X-rays from the sample SAM irradiated with the electron beam, an observation image obtained from the detection signal, and the like.

Further, the analysis position data D1, the lamella production position data D2, the lamella transport position data D3, and the analysis data D4 are associated with their respective information. That is, it is possible to know at which position on the lamella grid 20 the lamella 10 produced at a predetermined position on the wafer 1 is mounted, and what the analysis result of the lamella 10 is.

As the shape of the lamella 10, there are lamellas 10a to 10c in which the shape of the thin width region A1 and the shape of the thick width region A2 are different from each other. Not only that, shape data indicating which shape of the lamellas 10a to 10c is included is also included. Thereby, for example, when transporting a plurality of lamellas 10, the

lamellas

10a, 10b and 10c can be transported to the lamella grid 20 in order from the side closer to the substrate 21.

<Processing flow of analysis system>
FIG. 12 is a processing flow diagram of the analysis system 30 according to the first embodiment. Further, FIG. 13 is a perspective view of a main part showing a method of manufacturing a lamella by the lamella manufacturing mechanism, and FIGS. 14 and 15 are perspective views of a main part showing a method of transporting the lamella by the lamella transport mechanism.

In step S1, the wafer 1 whose cross-section analysis is to be performed is transferred from the semiconductor manufacturing line 2 to the lamella manufacturing apparatus 40, and the wafer 1 is installed on the wafer stage 44 of the lamella manufacturing apparatus 40.

In step S2, the lamella manufacturing apparatus 40 acquires the analysis position data D1 corresponding to the received wafer 1 from the server SV. The analysis position data D1 also includes data on which shape of the lamellas 10a to 10c.

In step S3, the wafer stage 44 is moved to the analysis position based on the analysis position data D1. Then, as shown in FIG. 13, the lamella 10 is made from a part of the wafer 1.

First, as shown in FIG. 13, in the lamella manufacturing apparatus 40, the periphery of the region to be analyzed in cross section on the wafer 1 is etched by a charged particle beam such as an ion beam IB to prepare the outer shape of the lamella 10. At this time, the shapes of the thin width region A1 and the thick width region A2 of the lamella 10 are also created. Next, the analysis unit 11 is produced on the upper part of the lamella 10 by etching a part of the lamella 10. The analysis unit 11 is subjected to a finished surface treatment or the like for later analysis.

Here, the lamella 10 is connected to the wafer 1 by the connection point 1a. In other words, at this point, the lamella 10, the connection point 1a and the wafer 1 are integrated, and the lamella 10 is separated from the connection point 1a when the lamella 10 is conveyed. The structure of the lamella 10 in this state is the same as the structure described with reference to FIG. 5 above, except for the connection portion 1a. Therefore, for the detailed structure of the lamella 10, refer to the above description of FIG.

Such movement of the wafer stage 44 and fabrication of the lamella 10 are carried out for all regions of the wafer 1 being processed corresponding to the analysis position data D1. That is, step S3 is repeated until the production of all the lamellas 10 corresponding to the analysis position data D1 is completed.

In step S4, among all the lamellas 10 produced in step S3, the positions of the plurality of lamellas 10 that have been successfully produced are transmitted to the server SV and stored in the server SV as lamella production position data D2. The lamella production position data D2 also includes data on which shape of the lamellas 10a to 10c.

In step S5, the wafer 1 on which a plurality of lamellas 10 are manufactured is transferred from the lamella manufacturing apparatus 40 to the lamella transporting apparatus 60. That is, the wafer 1 is transferred from the lamella manufacturing mechanism to the lamella transport mechanism.

Here, as described above, when the lamella production apparatus 40 has a lamella production mechanism and a lamella transport mechanism, the steps related to step S5 and the following steps S6 to S9 are performed by the lamella production apparatus 40.

In step S6, the lamella transport device 60 acquires the lamella production position data D2 corresponding to the received wafer 1 from the server SV.

In step S7, the wafer stage 44 is moved to the lamella manufacturing position based on the lamella manufacturing position data D2. Then, as shown in FIGS. 14 and 15, a plurality of lamellas 10 are conveyed to the lamella grid 20.

First, in the lamella transport device 60, the image formed by the electron beam column 42 or the electron beam column 61 is confirmed. Next, as shown in FIG. 14, the lamella 10 produced on the wafer 1 is held by using the attachment / detachment device 47. Here, the attachment / detachment device 47 is nano tweezers, and the lamella 10 is gripped by the nano tweezers. At this time, it is desirable to operate the nano tweezers so that the analysis unit 11 is not grasped.

Next, by lowering the wafer stage 44 or raising the detachable device 47, the lamella 10 is separated from the connection point 1a and lifted off from the wafer 1. In this way, the lamella 10 is obtained from a part of the wafer 1.

Next, the lamella grid stage 48 is moved to a position where an image can be acquired by the electron beam column 42 and the electron beam column 61, and the positions of the detachable device 47 and the lamella grid stage 48 are adjusted. Then, as shown in FIG. 15, the lamella 10 held by the detachable device 47 is moved directly above the support portions 22 (supports 22a to 22d) on the lamella grid 20.

Next, while checking the image formed by the electron beam column 42, the lamella 10 is inserted into the support portion 22 as shown in FIG. Specifically, the narrow region A1 of the lamella 10 is inserted between the support column 22a and the support column 22b, and between the support column 22c and the support column 22d. After the insertion of the lamella 10 to a desired position is completed, the attachment / detachment device 47 is released from the grip and the attachment / detachment device 47 is retracted. As described above, the first lamella 10 is conveyed from the wafer 1 to the lamella grid 20.

Next, the lamella 10 of the second and subsequent wafers is acquired from the wafer 1 by the same method as that of the first wafer, and the lamella 10 of the second and subsequent wafers is conveyed from the wafer 1 to the lamella grid 20. That is, as shown in FIG. 6, the first lamella 10a, the second lamella 10b, and the third lamella 10c are sequentially conveyed to the lamella grid 20.

Such movement of the wafer stage 44 and transfer of the lamella 10 are carried out on the wafer 1 for all regions corresponding to the lamella production position data D2. That is, step S7 is repeated until the transfer of all the lamellas 10 corresponding to the lamella production position data D2 is completed. Further, when the permissible range of one support portion 22 is exceeded, the subsequent lamella 10 is conveyed to the other support portion 22 on the lamella grid 20. Then, when the permissible range of one lamella grid 20 is exceeded, the subsequent lamella 10 is further conveyed to the support portion 22 of the other lamella grid 20.

As described above, according to the first embodiment, a plurality of lamellas 10 (10a to 10c) can be conveyed to the lamella grid 20. Further, the lamellas 10a to 10c are separated from each other in the Z direction, and each analysis unit 11 is not in contact with the other lamellas 10. Therefore, it is possible to suppress the problem that the analysis unit 11 is damaged. Further, in the first embodiment, since the deposition is not used at the time of transportation to the lamella grid 20, the transportation can be performed in a short time and the sample contamination is small.

As described in FIG. 6, each narrow region A1 of the lamellas 10a to 10c is fitted between the support column 22a and the support column 22b, and between the support column 22c and the support column 22d. The thick region A2 of the lamella 10a is mounted on the substrate 21, the thick region A2 of the lamella 10b is mounted on the stairs 23a, and the thick region A2 of the lamella 10c is mounted on the stairs 23b. Therefore, the lamella 10 is firmly held by the lamella grid 20 not only in the Y direction but also in the X direction. Therefore, it is possible to suppress the possibility that the position of the lamella 10 is displaced when the lamella grid 20 is conveyed while the lamella 10 is mounted on the lamella grid 20.

After the above steps S7, in step S8, among the lamellas 10 transported to the lamella grid 20, the positions of the lamellas 10 successfully transported on the lamella grid 20 are transmitted to the server SV and used as the lamella transport position data D3. It is saved in the server SV. The lamella transport position data D3 also includes data on which shape of the lamellas 10a to 10c.

In step S9, the wafer 1 in which the transfer of the plurality of lamellas 10 is completed is discharged from the lamella transfer device 60. After that, if necessary, the discharged wafer 1 may be returned to the semiconductor production line 2.

In step S10, the lamella grid 20 on which the plurality of lamellas 10 are mounted is transferred from the lamella transport device 60 to the lamella analysis device 70 as a sample SAM.

In step S11, the lamella analysis device 70, which is a lamella analysis mechanism, acquires the lamella transport position data D3 corresponding to the received lamella grid 20 from the server SV. The lamella analyzer 70 analyzes the lamella 10 (analysis unit 11) prepared as described above.

The analysis method of the lamella 10 performed by using the lamella analyzer 70 in the following steps S12 and S13 will be described. Here, a case where the lamella analysis apparatus 70 is a TEM apparatus is illustrated.

In step S12, the sample stage 72 is moved so as to reach the transport position of the sample SAM to be analyzed based on the lamella transport position data D3. The sample SAM is installed sideways so that the front surface of the sample SAM (analysis unit 11 of the lamella 10) corresponding to the plane seen from the Y direction in FIG. 4 faces the electron beam column 71.

Of the sample SAM, substantially each analysis unit 11 of the plurality of lamellas 10 is the analysis target unit, and the lamella grid 20 is a holder that supports the plurality of lamellas 10, but these are collectively referred to here. Described as sample SAM. Further, the analysis unit 11 does not overlap the support unit 22 and is exposed from the support unit 22 in a plan view viewed from the Y direction so that the analysis unit 11 is not obstructed by the support unit 22.

At the time of analysis of the analysis unit 11, first, the image of the sample SAM is acquired at a low magnification, and the position information (coordinates) of the sample stage 72 such that the analysis unit 11 of the lamella 10 is at the center of the field of view is acquired. Next, the sample stage 72 is moved to the coordinates, and then the cross-section analysis of the analysis unit 11 is performed at a high magnification.

As the analysis method of the analysis unit 11, a general method can be used. For example, by irradiating the analysis unit 11 with an electron beam from the electron beam column 71, the charged particle detector 74 and the charged particle detector 75 can analyze the charged particles emitted from the analysis unit 11. Further, the X-ray detector 76 can analyze the X-rays emitted from the analysis unit 11.

Here, when three lamellas 10a to 10c are mounted on one support portion 22, the position information of the sample stage 72 of each analysis unit 11 of the lamellas 10a to 10c is obtained when acquiring a low-magnification image. It is possible to get it. Therefore, it is not necessary to alternately perform low magnification and high magnification, and the time for cross-sectional analysis can be shortened.

Specifically, after moving the sample stage 72 to the coordinates of the analysis unit 11 of the lamella 10a and completing the high-magnification cross-sectional analysis in the analysis unit 11 of the lamella 10a, the lamella 10b is not reduced in magnification again. The sample stage 72 is moved to the coordinates of the analysis unit 11, and the analysis unit 11 of the lamella 10b performs high-magnification cross-sectional analysis. After that, the sample stage 72 is moved to the coordinates of the analysis unit 11 of the lamella 10c, and the analysis unit 11 of the lamella 10c performs a high-magnification cross-sectional analysis.

According to the analysis method of the lamella 10 in the first embodiment, since the plurality of lamella 10s are separated from each other in the Z direction, there is no other lamella 10 near the analysis unit 11 to be observed. Cross-section analysis can be performed with. Therefore, at the time of cross-section analysis, the possibility of being affected by other components of the lamella 10 is reduced, so that the accuracy of the observation image obtained by the charged particle detector 74 and the charged particle detector 75 can be further improved. In addition, the accuracy of elemental analysis obtained by the X-ray detector 76 can be improved.

After that, in step S13, the analysis result of the analysis unit 11 of the lamella 10 obtained by the cross-section analysis is transmitted to the server SV and stored in the server SV as analysis data D4. The analysis data D4 also includes data on which shape of the lamellas 10a to 10c.

(Embodiment 2)
The lamella 10 and the lamella grid 20 in the second embodiment will be described below with reference to FIGS. 16 to 18. In the following description, the differences from the first embodiment will be mainly described.

In the first embodiment, the stairs 23 of the columns 22a and the stairs 23 of the columns 22c are formed so as not to face each other in the X direction, and the stairs 23 of the columns 22b and the stairs 23 of the columns 22d do not face each other in the X direction. Was formed in.

As shown in FIG. 16, in the second embodiment, the stairs 23 of the columns 22a and the stairs 23 of the columns 22c are formed so as to face each other in the X direction, and the stairs 23 of the columns 22b and the stairs 23 of the columns 22d are formed. They are formed so as to face each other in the X direction. In other words, in the X direction, the stairs 23 of the columns 22a are formed on the columns 22c side, the stairs 23 of the columns 22b are formed on the columns 22d side, the stairs 23 of the columns 22c are formed on the columns 22a side, and the stairs of the columns 22d. 23 is formed on the support column 22b side.

Also in the second embodiment, the width of each of the columns 22a to 22d in the X direction changes as the distance from the substrate 21 in the Z direction increases, and the width gradually decreases. For example, at the location closest to the substrate 21, each of the columns 22a-22d has a width W8, and each of the columns 22a-22d has a width W9 or a width W10 as it moves away from the substrate 21 in the Z direction. There is. The width W8 is larger than the width W9, and the width W9 is larger than the width W10.

As shown in FIG. 17, the lamella 10 in the second embodiment also has the thin width region A1 and the thick width region A2, but in the second embodiment, the analysis unit 11 is provided in the thick width region A2. The thick region A2 has a width W11 in the X direction and a width W13 in the Y direction, the thin region A1 has a width W12 in the X direction and a width W14 in the Y direction, and the width W13 is larger than the width W14. large. Further, by appropriately designing the values of the width W11 and the width W12, it is possible to form a plurality of lamellas 10 having different shapes in the thin width region A1. The width of the analysis unit 11 in the Y direction is smaller than the width W14 of the thin width region A1 and the width W13 of the thick width region A2.

As shown in FIG. 18, a plurality of lamellas 10 (10a to 10c) are mounted on the lamella grid 20 so as to be separated from each other in the Z direction. Further, the width W12 of the thin width region A1 and the width W11 of the thick width region A2 are adjusted so that the lamellas 10a to 10c fit the widths W8 to W10 of the columns 22a to 22d, respectively. The width W12 of the lamella 10a is larger than the width W12 of the lamella 10b, and the width W12 of the lamella 10b is larger than the width W12 of the lamella 10c.

Also in the second embodiment, the lamellas 10a to 10c are mounted on the support portions 22 having different widths such as widths W8 to W10. Each narrow region A1 of the lamellas 10a to 10c is fitted between the

columns

22a and 22b and between the

columns

22c and 22d. The thick region A2 of the lamella 10a is mounted on the substrate 21, the thick region A2 of the lamella 10b is mounted on the stairs 23a, and the thick region A2 of the lamella 10c is mounted on the stairs 23b.

As described above, in the second embodiment as in the first embodiment, a plurality of lamellas 10 (10a to 10c) can be mounted on the lamella grid 20. Further, the width H1 of the stairs 23a to 23c in each Z direction is set longer than the width H2 of the lamellas 10a to 10c in the Z direction. Therefore, since the lamellas 10a to 10c are separated from each other in the Z direction, it is possible to suppress a problem that the analysis unit 11 is damaged. Also, no deposition is used during transport to the lamella grid 20. Further, the lamella 10 is firmly held by the lamella grid 20 in the Y direction and the X direction.

(Embodiment 3)
The lamella 10 and the lamella grid 20 in the third embodiment will be described below with reference to FIGS. 19 and 20. In the following description, the differences from the first embodiment will be mainly described.

In the first embodiment, the widths of the columns 22a to 22d in the X direction are gradually reduced as the stairs 23a to 23c move away from the substrate 21 in the Z direction.

As shown in FIG. 19, the columns 22a to 22d in the third embodiment have a tapered shape, and the surface on which the stairs 23a to 23c are formed in the first embodiment is inclined instead of the stairs 23a to 23c. It is composed of faces. Therefore, in the third embodiment, the width of each of the columns 22a to 22d in the X direction changes and continuously decreases as the distance from the substrate 21 in the Z direction increases. For example, at a location relatively close to the substrate 21, each of the columns 22a to 22d has a width W15, and as the distance from the substrate 21 increases, each of the columns 22a to 22d has a width W16 smaller than the width W15, or It has a width W17 that is smaller than the width W16.

As shown in FIG. 20, in the third embodiment, lamellas 10a to 10c having the same structure as those in FIGS. 5 and 6 of the first embodiment are used. The lamellas 10a to 10c are mounted on the support portions 22 at locations having different widths such as widths W15 to W17. Therefore, also in the third embodiment, it is possible to firmly hold the plurality of lamellas 10 on the lamella grid 20 while separating the plurality of lamellas 10 from each other in the Z direction.

(Embodiment 4)
The lamella 10 and the lamella grid 20 in the fourth embodiment will be described below with reference to FIGS. 21 and 22. In the following description, the differences from the second embodiment will be mainly described.

As shown in FIG. 21, the columns 22a to 22d in the fourth embodiment have a tapered shape, and the surface on which the stairs 23a to 23c are formed in the second embodiment is inclined instead of the stairs 23a to 23c. It is composed of faces. Therefore, in the fourth embodiment, the width of each of the columns 22a to 22d in the X direction changes and continuously decreases as the distance from the substrate 21 in the Z direction increases. For example, at a location relatively close to the substrate 21, each of the columns 22a to 22d has a width W18, and as the distance from the substrate 21 increases, each of the columns 22a to 22d has a width W19 smaller than the width W18, or It has a width W20 smaller than the width W19.

As shown in FIG. 22, in the fourth embodiment, the lamellas 10a to 10c having the same structure as those of FIGS. 17 and 18 of the second embodiment are used. The lamellas 10a to 10c are mounted on the support portions 22 at locations having different widths such as widths W15 to W17. Therefore, also in the fourth embodiment, it is possible to firmly hold the plurality of lamellas 10 on the lamella grid 20 while separating the plurality of lamellas 10 from each other in the Z direction.

(Embodiment 5)
The lamella 10 and the lamella grid 20 in the fifth embodiment will be described below with reference to FIG. 23. In the following description, the differences between the third embodiment and the fourth embodiment will be mainly described.

As shown in FIG. 23, the columns 22a to 22d in the fifth embodiment are formed with the inclined surfaces shown in the third and fourth embodiments. That is, in the X direction, the support column 22a has an inclined surface on the support column 22c side and the side opposite to the support column 22c, the support column 22b has an inclined surface on the support column 22d side and the side opposite to the support column 22d, and the support column 22c has an inclined surface. The strut 22a side and the side opposite to the strut 22a have an inclined surface, and the strut 22d has an inclined surface on the strut 22b side and the side opposite to the strut 22b.

Therefore, in the fifth embodiment, the width of each of the columns 22a to 22d in the X direction changes and continuously decreases as the distance from the substrate 21 in the Z direction increases. For example, at a location relatively close to the substrate 21, each of the columns 22a to 22d has a width W21, and as the distance from the substrate 21 increases, each of the columns 22a to 22d has a width W22 smaller than the width W21, or It has a width W23 smaller than the width W22.

Although not shown, the lamella grid 20 in the fifth embodiment may be equipped with lamellas 10a to 10c having the same structure as those in FIGS. 5 and 6, and lamellas 10a to 10c having the same structure as those in FIGS. 17 and 18. Can also be installed. In any case, the lamellas 10a to 10c are mounted on the support portions 22 having different widths such as widths W21 to W23. Therefore, it is possible to firmly hold the plurality of lamellas 10 on the lamella grid 20 while separating the plurality of lamellas 10 from each other in the Z direction.

Further, in the fifth embodiment, since both side surfaces of the columns 22a to 22d are inclined surfaces, the columns 22a to 22d tend to be higher than those of the third and fourth embodiments, and the plurality of support portions 22 The pitch in the X direction tends to be wide. However, by using the lamella grid 20 in the fifth embodiment, the thick region A2 is provided at the central portion of the lamella 10, and the thick region A2 is provided at both ends of the lamella 10. However, it is possible to save the trouble of preparing the lamella grid 20 corresponding to them.

That is, when it is desired to narrow the pitch of the plurality of support portions 22, the techniques of the third and fourth embodiments are excellent, but when there is a margin in the pitch of the plurality of support portions 22, the lamella 10 The technique of the fifth embodiment, which has a high degree of freedom for the shape of the above, is excellent.

(Embodiment 6)
The lamella 10 and the lamella grid 20 in the sixth embodiment will be described below with reference to FIGS. 24 to 31. In the following description, the differences from the first to fifth embodiments will be mainly described.

In the first to fifth embodiments, the columns 22a to 22d are provided with a plurality of stairs 23 or inclined surfaces, but the columns 22a to 22d in the sixth embodiment have a convex portion 24 for holding the lamella 10. It is provided.

The convex portion 24 is provided on either one of the

support columns

22a or 22b and one of the

support columns

22c or 22d. FIG. 24 illustrates a case where the convex portions 24 are provided on the support columns 22b and the support columns 22d, and a plurality of convex portions 24 are provided in the Z direction. The convex portion 24 of the support column 22b is provided so as to project toward the support column 22a and not come into contact with the support column 22a. Further, the convex portion 24 of the support column 22d is provided so as to project toward the support column 22c side and not in contact with the support column 22c.

Further, the shape of the convex portion 24 is preferably a hemisphere so that damage to the lamella 10 can be suppressed as much as possible and the lamella 10 can be easily attached and detached. The hemisphere includes not only a hemisphere based on a true arc but also a hemisphere based on an elliptical arc.

Further, the convex portion 24 may be made of the same material as the material constituting the support portion 22, or may be made of a material different from the material constituting the support portion 22.

As shown in FIG. 25, in the sixth embodiment, the

lamellas

10a and 10b having the same structure as those of the study example 1 and the study example 2 are mounted, but in these

lamellas

10a and 10b, the width in the Y direction is the distance L1. Because it is smaller than, these

lamellas

10a and 10b can be mounted between the columns 22a and the columns 22b and between the columns 22c and the columns 22d. It is also possible to mount the lamellas 10a to 10c having the thin width region A1 and the thick width region A2 as in the first and second embodiments on the lamella grid 20 in the sixth embodiment.

Further, here, a case where two

lamellas

10a and 10b are mounted is illustrated, but by changing the shape (height) of the support portion 22 and further increasing the number of convex portions 24, three or more lamella grids 20 are mounted. It is also possible to mount a plurality of lamellas 10 of the above.

The lower lamella 10a is mounted on the substrate 21, while the upper lamella 10b is mounted on the convex portion 24. Further, the width H3, which is the distance between the lower convex portion 24 and the substrate 21 and the distance between the two convex portions 24, is set longer than the width H2 of the lamella 10a in the Z direction. Therefore, since the lamella 10a and the lamella 10b are separated from each other in the Z direction, the analysis unit 11 of the lamella 10a does not come into contact with the lamella 10b.

The method of transporting the lamella 10 in the sixth embodiment will be described with reference to FIGS. 26 to 31. 26 and 27, 28 and 29, and 30 and 31, respectively, are transport steps at the same timing, and are shown as perspective views and side views, respectively. Further, the following transport method is performed in step S7 described above, and is performed by a lamella transport mechanism (for example, a lamella transport device 60).

First, as shown in FIGS. 26 and 27, the lamella 10a acquired from the wafer 1 using the detachable device 47 is moved directly above the support portions 22 (supports 22a to 22d) on the lamella grid 20.

Next, as shown in FIGS. 28 and 29, by applying a driving force for moving the attachment / detachment 47 in the Z direction, the distance between the support column 22b and the support column 22a (the distance between the support column 22d and the support column 22c) is slightly increased. Spread, the lamella 10a scrapes the upper convex portion 24.

Next, as shown in FIGS. 30 and 31, the lamella 10a that has scraped the convex portion 24 by further moving the detachable device 47 is conveyed between the lower convex portion 24 and the upper convex portion 24. Will be done. After that, by further moving the attachment / detachment device 47, the lamella 10a scrapes the lower convex portion 24 and is conveyed onto the substrate 21. In this way, the lamella 10a is inserted between the support column 22a and the support column 22b and between the support column 22c and the support column 22d while scraping the plurality of convex portions 24.

After that, the second and subsequent lamellas 10 are transported to the lamella grid 20 by the same method as above. As described above, the plurality of lamellas 10 are conveyed to the lamella grid 20. Since the plurality of lamellas 10 are separated from each other in the Z direction via the convex portion 24 of the support column 22b and the convex portion 24 of the support column 22d, the analysis unit 11 does not come into contact with the other lamellas 10.

Although the present invention has been specifically described above based on the above-described embodiment, the present invention is not limited to the above-described embodiment and can be variously modified without departing from the gist thereof.

For example, although the lamella grid 20 is provided with a plurality of support portions 22, some of the support portions 22 have the structure of the first embodiment, and the other support portions 22 have the structure of the second embodiment. It is also possible to mount the support portions 22 of the first to sixth embodiments having different structures on the lamella grid 20 in a mixed manner.

In addition, a part of the contents described in the above embodiment is described below.

[Appendix 1]
An analysis system including a lamella manufacturing mechanism and a lamella transport mechanism.
(A) In the lamella manufacturing mechanism, a step of manufacturing at least a first lamella having a first analysis unit and a second lamella having a second analysis unit by etching a part of the wafer.
(B) In the lamella transport mechanism, a step of sequentially transporting the first lamella and the second lamella from the wafer to the lamella grid.
Have,
The lamella grid includes a substrate and first, second, third and fourth struts projecting from the surface of the substrate in the first direction, respectively.
The first strut is separated from the second strut in the second direction orthogonal to the first direction, and separated from the third strut in the first direction and the third direction orthogonal to the second direction. ,
The second strut is separated from the fourth strut in the third direction.
The third strut is separated from the fourth strut in the second direction.
The second support column is provided with a plurality of first convex portions so as to project toward the first support column and not come into contact with the first support column.
The fourth strut is provided with a plurality of second convex portions so as to project toward the third strut and not come into contact with the third strut.
The width of each of the first analysis unit and the second analysis unit in the second direction is smaller than the width of the lamella around the analysis unit in the second direction.
The step (b) is
(B1) While scraping the plurality of first convex portions and the plurality of second convex portions, the first lamella is placed between the first strut and the second strut, and the third strut and the first strut. The process of inserting between 4 columns,
(B2) After the step (b1), the second lamella is removed from the first lamella in the first direction via a part of the plurality of first convex portions and a part of the plurality of second convex portions. While scraping the plurality of first convex portions and the plurality of second convex portions so as to be separated from each other, the second lamella is placed between the first support column and the second support column, and the third support column. And the process of inserting between the fourth support column,
Has an analysis system.

[Appendix 2]
In the analysis system described in Appendix 1,
An analysis system in which the shapes of the plurality of first convex portions and the plurality of second convex portions are hemispherical bodies.

[Appendix 3]
In the analysis system described in Appendix 1,
Further equipped with a lamella analysis mechanism having an electron beam column and a sample stage,
(C) In the lamella analysis mechanism, the first lamella and the second lamella are mounted so that the first analysis unit and the second analysis unit face the electron beam column, respectively, in the first direction. A step of analyzing the first analysis unit and the second analysis unit while the lamella grid is installed on the sample stage.
An analysis system that further has.

1 Wafer 1a Connection point 2

Semiconductor production line

10, 10a, 10b, 10c Lamella 11 Analysis unit 20 Lamella grid 21 Base 22 Support parts 22a to

22d Support columns

23, 23a, 23b, 23c Stairs 24 Convex 30 Analysis system 31 Network configuration 32 Network 40 Lamella fabrication device 41 Ion beam column 42 Electron beam column 43 Sample chamber 44 Wafer stage 45 Wafer holder 46 Charged particle detector 47 Detacher 48 Lamella grid stage 49 Lamella grid holder 50 Input device 51 Display 52 GUI screen 60 Lamella transfer device 61 Electron beam column 70 Lamella analyzer 71 Electron beam column 72 Sample stage 73 Sample exchange chamber 74 Charged particle detector 75 Charged particle detector 76 X-ray detector 77 Sample chamber 78 Input device 79 Display 80 GUI screen A1 Narrow width region A2 Thick region C1 Ion beam column control unit C2 Electron beam column control unit C3 Wafer stage control unit C4 Detector control unit C5 Detachable device control unit C6 Lamella grid stage control unit C7 Integrated control unit C8 Electron beam column control unit C9 Electron beam column Control unit C10 Sample stage control unit C11 Detector control unit C12 Detector control unit C13 X-ray detector control unit C14 Integrated control unit CP1, CP2 Cross point D1 Analysis position data D2 Lamella production position data D3 Lamella transfer position data D4 Analysis data EB1, EB2 electron beam (charged particle beam)
H1 to H3 width IB ion beam (charged particle beam)
L1 Distance OA1 to OA3 Optical axis S1 to S13 Step SV server W1 to W23 Width

Claims

A lamella grid for mounting lamellas analyzed using a charged particle beam device.
With the base
The first strut, the second strut, the third strut, and the fourth strut projecting from the surface of the substrate in the first direction, respectively.
Have,
The first strut is separated from the second strut in the second direction orthogonal to the first direction, and separated from the third strut in the first direction and the third direction orthogonal to the second direction. ,
The second strut is separated from the fourth strut in the third direction.
The third strut is separated from the fourth strut in the second direction.
A lamella grid in which the width of each of the first strut, the second strut, the third strut, and the fourth strut in the third direction decreases as the distance from the substrate increases in the first direction.
In the lamella grid according to claim 1,
The width of each of the first strut, the second strut, the third strut, and the fourth strut in the third direction gradually decreases as the distance from the substrate in the first direction increases. , Lamella grid.
In the lamella grid according to claim 2.
A plurality of stairs are provided in each of the first strut, the second strut, the third strut, and the fourth strut.
The plurality of stairs provided on the first support column are provided on the opposite side to the third support column.
The plurality of stairs provided on the second support column are provided on the opposite side to the fourth support column.
The plurality of stairs provided on the third support column are provided on the opposite side of the first support column.
The plurality of stairs provided on the fourth support column are lamella grids provided on the opposite side to the second support column.
In the lamella grid according to claim 2.
A plurality of stairs are provided in each of the first strut, the second strut, the third strut, and the fourth strut.
The plurality of stairs provided on the first support column are provided on the third support column side.
The plurality of stairs provided on the second support column are provided on the fourth support column side.
The plurality of stairs provided on the third support column are provided on the first support column side.
The plurality of stairs provided on the fourth support column are lamella grids provided on the second support column side.
In the lamella grid according to claim 1,
The width of each of the first strut, the second strut, the third strut, and the fourth strut in the third direction is continuously reduced as the distance from the substrate in the first direction increases. , Lamella grid.
In the lamella grid according to claim 5.
The first strut has a first inclined surface on the side of the third strut or on the side opposite to the third strut.
The second strut has a second inclined surface on the side of the fourth strut or on the side opposite to the fourth strut.
The third strut has a third inclined surface on the side of the first strut or on the side opposite to the first strut.
The fourth strut is a lamella grid having a fourth inclined surface on the side of the second strut or on the side opposite to the second strut.
In the lamella grid according to claim 5.
The first strut has a fifth inclined surface on the side of the third strut and has a first inclined surface on the side opposite to the third strut.
The second strut has a sixth inclined surface on the side of the fourth strut, and has a second inclined surface on the side opposite to the fourth strut.
The third strut has a seventh inclined surface on the side of the first strut, and has a third inclined surface on the side opposite to the first strut.
The fourth strut is a lamella grid having an eighth inclined surface on the side of the second strut and a fourth inclined surface on the side opposite to the second strut.
A lamella grid for mounting lamellas analyzed using a charged particle beam device.
With the base
The first strut, the second strut, the third strut, and the fourth strut projecting from the surface of the substrate in the first direction, respectively.
Have,
The first strut is separated from the second strut in the second direction orthogonal to the first direction, and separated from the third strut in the first direction and the third direction orthogonal to the second direction. ,
The second strut is separated from the fourth strut in the third direction.
The third strut is separated from the fourth strut in the second direction.
The second support column is provided with a plurality of first convex portions so as to project toward the first support column and not come into contact with the first support column.
A lamella grid provided with a plurality of second convex portions on the fourth strut so as to project toward the third strut and not come into contact with the third strut.
In the lamella grid according to claim 8.
A lamella grid in which the shape of each of the plurality of first convex portions and the plurality of second convex portions is a hemisphere.
An analysis system including a lamella manufacturing mechanism and a lamella transport mechanism.
(A) In the lamella manufacturing mechanism, a step of manufacturing at least a first lamella having a first analysis unit and a second lamella having a second analysis unit by etching a part of the wafer.
(B) In the lamella transport mechanism, a step of sequentially transporting the first lamella and the second lamella from the wafer to the lamella grid.
Have,
The lamella grid includes a substrate and first, second, third and fourth struts projecting from the surface of the substrate in the first direction, respectively.
The first strut is separated from the second strut in the second direction orthogonal to the first direction, and separated from the third strut in the first direction and the third direction orthogonal to the second direction. ,
The second strut is separated from the fourth strut in the third direction.
The third strut is separated from the fourth strut in the second direction.
The width of each of the first strut, the second strut, the third strut, and the fourth strut in the third direction decreases as the distance from the substrate increases in the first direction.
The first lamella includes a first narrow region and a first thick region.
The width of the first narrow width region in the second direction is the first distance between the first strut and the second strut, and the second distance between the third strut and the fourth strut. Smaller than
The width of the first thickness region in the second direction is larger than the first distance and the second distance.
The second lamella includes a second narrow region and a second thick region.
The width of the second narrow region in the second direction is smaller than the first distance and the second distance.
The width of the second thick region in the second direction is larger than the first distance and the second distance.
The width of the first narrow region in the third direction is different from the width of the second narrow region in the third direction.
The width of the first width region in the third direction is different from the width of the second width region in the third direction.
The width of each of the first analysis unit and the second analysis unit in the second direction is smaller than the width of the first narrow width region and the second narrow width region in the second direction.
The step (b) is
(B1) A step of inserting the first narrow width region between the first strut and the second strut and between the third strut and the fourth strut.
(B2) After the step (b1), the second narrow region is formed by the first strut and the second strut so that the second lamella is separated from the first lamella in the first direction. Between and the step of inserting between the third strut and the fourth strut,
Has an analysis system.
In the analysis system according to claim 10,
A plurality of stairs are provided in each of the first strut, the second strut, the third strut, and the fourth strut.
The plurality of stairs provided on the first support column are provided on the opposite side to the third support column.
The plurality of stairs provided on the second support column are provided on the opposite side to the fourth support column.
The plurality of stairs provided on the third support column are provided on the opposite side of the first support column.
The plurality of stairs provided on the fourth support column are provided on the opposite side to the second support column.
The width of the first narrow region in the third direction is larger than the width of the second narrow region in the third direction.
An analysis system in which the width of the first width region in the third direction is smaller than the width of the second width region in the third direction.
In the analysis system according to claim 10,
A plurality of stairs are provided in each of the first strut, the second strut, the third strut, and the fourth strut.
The plurality of stairs provided on the first support column are provided on the third support column side.
The plurality of stairs provided on the second support column are provided on the fourth support column side.
The plurality of stairs provided on the third support column are provided on the first support column side.
The plurality of stairs provided on the fourth support column are provided on the second support column side.
The width of the first narrow region in the third direction is smaller than the width of the second narrow region in the third direction.
An analysis system in which the width of the first width region in the third direction is larger than the width of the second width region in the third direction.
In the analysis system according to claim 10,
The first strut has a first inclined surface on the opposite side of the third strut.
The second strut has a second inclined surface on the opposite side of the fourth strut.
The third strut has a third inclined surface on the opposite side of the first strut.
The fourth strut has a fourth inclined surface on the opposite side of the second strut.
The width of the first narrow region in the third direction is larger than the width of the second narrow region in the third direction.
An analysis system in which the width of the first width region in the third direction is smaller than the width of the second width region in the third direction.
In the analysis system according to claim 10,
The first strut has a fifth inclined surface on the third strut side.
The second strut has a sixth inclined surface on the side of the fourth strut.
The third strut has a seventh inclined surface on the first strut side.
The fourth strut has an eighth inclined surface on the second strut side.
The width of the first narrow region in the third direction is smaller than the width of the second narrow region in the third direction.
An analysis system in which the width of the first width region in the third direction is larger than the width of the second width region in the third direction.
In the analysis system according to claim 10,
Further equipped with a lamella analysis mechanism having a second electron beam column and a sample stage,
(C) In the lamella analysis mechanism, the first lamella and the second lamella are mounted so that the first analysis unit and the second analysis unit face the second electron beam column, respectively, in the first direction. A step of analyzing the first analysis unit and the second analysis unit while the lamella grid is installed on the sample stage.
An analysis system that further has.