JP3998755B2 - 半導体表示装置 - Google Patents
半導体表示装置 Download PDFInfo
- Publication number
- JP3998755B2 JP3998755B2 JP14854097A JP14854097A JP3998755B2 JP 3998755 B2 JP3998755 B2 JP 3998755B2 JP 14854097 A JP14854097 A JP 14854097A JP 14854097 A JP14854097 A JP 14854097A JP 3998755 B2 JP3998755 B2 JP 3998755B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- thin film
- display device
- gap
- pixel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title claims description 22
- 239000000758 substrate Substances 0.000 claims description 146
- 239000000463 material Substances 0.000 claims description 96
- 239000010408 film Substances 0.000 claims description 74
- 229920001721 polyimide Polymers 0.000 claims description 28
- 239000010409 thin film Substances 0.000 claims description 25
- 239000004642 Polyimide Substances 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
- 239000004962 Polyamide-imide Substances 0.000 claims description 3
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims description 3
- 150000001408 amides Chemical class 0.000 claims description 3
- 229920002312 polyamide-imide Polymers 0.000 claims description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 75
- 239000011159 matrix material Substances 0.000 description 75
- 210000004027 cell Anatomy 0.000 description 40
- 238000000034 method Methods 0.000 description 19
- 125000006850 spacer group Chemical group 0.000 description 16
- 238000004519 manufacturing process Methods 0.000 description 15
- 239000010410 layer Substances 0.000 description 13
- 238000002347 injection Methods 0.000 description 11
- 239000007924 injection Substances 0.000 description 11
- 239000000565 sealant Substances 0.000 description 9
- 238000000137 annealing Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 7
- 239000011229 interlayer Substances 0.000 description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 229910052698 phosphorus Inorganic materials 0.000 description 5
- 239000011574 phosphorus Substances 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 5
- 238000007639 printing Methods 0.000 description 5
- 238000004528 spin coating Methods 0.000 description 5
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 4
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 239000003795 chemical substances by application Substances 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 238000007789 sealing Methods 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000003566 sealing material Substances 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 2
- 239000009719 polyimide resin Substances 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910018575 Al—Ti Inorganic materials 0.000 description 1
- 239000004677 Nylon Substances 0.000 description 1
- 229920000297 Rayon Polymers 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 1
- 239000004815 dispersion polymer Substances 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000005262 ferroelectric liquid crystals (FLCs) Substances 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229960001730 nitrous oxide Drugs 0.000 description 1
- 235000013842 nitrous oxide Nutrition 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000002964 rayon Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Landscapes
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
Priority Applications (13)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14854097A JP3998755B2 (ja) | 1997-05-22 | 1997-05-22 | 半導体表示装置 |
| TW087107846A TW430859B (en) | 1997-05-22 | 1998-05-20 | Electro-optical device |
| KR1019980018447A KR100569034B1 (ko) | 1997-05-22 | 1998-05-22 | 표시장치 |
| US09/793,116 US6465268B2 (en) | 1997-05-22 | 2001-02-27 | Method of manufacturing an electro-optical device |
| US10/236,957 US6743650B2 (en) | 1997-05-22 | 2002-09-09 | Method of manufacturing an electro-optical device |
| KR1020030030811A KR100528376B1 (ko) | 1997-05-22 | 2003-05-15 | 표시장치 제작방법 |
| US10/845,378 US8045125B2 (en) | 1997-05-22 | 2004-05-14 | Liquid crystal display device having a gap retaining member made of resin formed directly over the driver circuit |
| US10/855,445 US20040218112A1 (en) | 1997-05-22 | 2004-05-28 | Electro-optical device |
| KR1020050056817A KR100686246B1 (ko) | 1997-05-22 | 2005-06-29 | 액정표시장치 제작방법 |
| KR1020050056816A KR100686245B1 (ko) | 1997-05-22 | 2005-06-29 | 표시장치 |
| KR1020050070987A KR100686569B1 (ko) | 1997-05-22 | 2005-08-03 | 표시장치 |
| KR1020050070988A KR100686577B1 (ko) | 1997-05-22 | 2005-08-03 | 액정표시장치 제작방법 |
| US13/278,219 US8854593B2 (en) | 1997-05-22 | 2011-10-21 | Electro-optical device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14854097A JP3998755B2 (ja) | 1997-05-22 | 1997-05-22 | 半導体表示装置 |
Related Child Applications (4)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004160481A Division JP4286722B2 (ja) | 2004-05-31 | 2004-05-31 | 半導体表示装置 |
| JP2004160489A Division JP4286723B2 (ja) | 2004-05-31 | 2004-05-31 | 半導体表示装置 |
| JP2004160461A Division JP3999216B2 (ja) | 2004-05-31 | 2004-05-31 | 半導体表示装置 |
| JP2006186315A Division JP4057040B2 (ja) | 2006-07-06 | 2006-07-06 | 半導体表示装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPH10319440A JPH10319440A (ja) | 1998-12-04 |
| JPH10319440A5 JPH10319440A5 (enExample) | 2005-04-07 |
| JP3998755B2 true JP3998755B2 (ja) | 2007-10-31 |
Family
ID=15455066
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14854097A Expired - Lifetime JP3998755B2 (ja) | 1997-05-22 | 1997-05-22 | 半導体表示装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3998755B2 (enExample) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6465268B2 (en) | 1997-05-22 | 2002-10-15 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing an electro-optical device |
| JP4298131B2 (ja) | 1999-05-14 | 2009-07-15 | 株式会社半導体エネルギー研究所 | 液晶表示装置の作製方法 |
| US6680487B1 (en) | 1999-05-14 | 2004-01-20 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor comprising a TFT provided on a substrate having an insulating surface and method of fabricating the same |
| JP4666723B2 (ja) | 1999-07-06 | 2011-04-06 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| TW459275B (en) | 1999-07-06 | 2001-10-11 | Semiconductor Energy Lab | Semiconductor device and method of fabricating the same |
| US6639265B2 (en) | 2000-01-26 | 2003-10-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing the semiconductor device |
| JP4789369B2 (ja) * | 2001-08-08 | 2011-10-12 | 株式会社半導体エネルギー研究所 | 表示装置及び電子機器 |
| KR100652045B1 (ko) * | 2001-12-21 | 2006-11-30 | 엘지.필립스 엘시디 주식회사 | 액정표시소자 및 그 제조방법 |
| JP5005108B2 (ja) * | 2011-11-15 | 2012-08-22 | 株式会社半導体エネルギー研究所 | 液晶表示装置 |
| JP2013137568A (ja) * | 2013-02-27 | 2013-07-11 | Semiconductor Energy Lab Co Ltd | 液晶表示装置 |
| JP2014059583A (ja) * | 2013-12-05 | 2014-04-03 | Semiconductor Energy Lab Co Ltd | 表示装置 |
| WO2018037988A1 (ja) | 2016-08-23 | 2018-03-01 | シャープ株式会社 | 表示装置 |
-
1997
- 1997-05-22 JP JP14854097A patent/JP3998755B2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH10319440A (ja) | 1998-12-04 |
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