JP3998755B2 - 半導体表示装置 - Google Patents

半導体表示装置 Download PDF

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Publication number
JP3998755B2
JP3998755B2 JP14854097A JP14854097A JP3998755B2 JP 3998755 B2 JP3998755 B2 JP 3998755B2 JP 14854097 A JP14854097 A JP 14854097A JP 14854097 A JP14854097 A JP 14854097A JP 3998755 B2 JP3998755 B2 JP 3998755B2
Authority
JP
Japan
Prior art keywords
substrate
thin film
display device
gap
pixel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP14854097A
Other languages
English (en)
Japanese (ja)
Other versions
JPH10319440A5 (enExample
JPH10319440A (ja
Inventor
吉晴 平形
毅 西
舜平 山崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP14854097A priority Critical patent/JP3998755B2/ja
Priority to TW087107846A priority patent/TW430859B/zh
Priority to KR1019980018447A priority patent/KR100569034B1/ko
Publication of JPH10319440A publication Critical patent/JPH10319440A/ja
Priority to US09/793,116 priority patent/US6465268B2/en
Priority to US10/236,957 priority patent/US6743650B2/en
Priority to KR1020030030811A priority patent/KR100528376B1/ko
Priority to US10/845,378 priority patent/US8045125B2/en
Priority to US10/855,445 priority patent/US20040218112A1/en
Publication of JPH10319440A5 publication Critical patent/JPH10319440A5/ja
Priority to KR1020050056817A priority patent/KR100686246B1/ko
Priority to KR1020050056816A priority patent/KR100686245B1/ko
Priority to KR1020050070987A priority patent/KR100686569B1/ko
Priority to KR1020050070988A priority patent/KR100686577B1/ko
Application granted granted Critical
Publication of JP3998755B2 publication Critical patent/JP3998755B2/ja
Priority to US13/278,219 priority patent/US8854593B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
JP14854097A 1997-05-22 1997-05-22 半導体表示装置 Expired - Lifetime JP3998755B2 (ja)

Priority Applications (13)

Application Number Priority Date Filing Date Title
JP14854097A JP3998755B2 (ja) 1997-05-22 1997-05-22 半導体表示装置
TW087107846A TW430859B (en) 1997-05-22 1998-05-20 Electro-optical device
KR1019980018447A KR100569034B1 (ko) 1997-05-22 1998-05-22 표시장치
US09/793,116 US6465268B2 (en) 1997-05-22 2001-02-27 Method of manufacturing an electro-optical device
US10/236,957 US6743650B2 (en) 1997-05-22 2002-09-09 Method of manufacturing an electro-optical device
KR1020030030811A KR100528376B1 (ko) 1997-05-22 2003-05-15 표시장치 제작방법
US10/845,378 US8045125B2 (en) 1997-05-22 2004-05-14 Liquid crystal display device having a gap retaining member made of resin formed directly over the driver circuit
US10/855,445 US20040218112A1 (en) 1997-05-22 2004-05-28 Electro-optical device
KR1020050056817A KR100686246B1 (ko) 1997-05-22 2005-06-29 액정표시장치 제작방법
KR1020050056816A KR100686245B1 (ko) 1997-05-22 2005-06-29 표시장치
KR1020050070987A KR100686569B1 (ko) 1997-05-22 2005-08-03 표시장치
KR1020050070988A KR100686577B1 (ko) 1997-05-22 2005-08-03 액정표시장치 제작방법
US13/278,219 US8854593B2 (en) 1997-05-22 2011-10-21 Electro-optical device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14854097A JP3998755B2 (ja) 1997-05-22 1997-05-22 半導体表示装置

Related Child Applications (4)

Application Number Title Priority Date Filing Date
JP2004160481A Division JP4286722B2 (ja) 2004-05-31 2004-05-31 半導体表示装置
JP2004160489A Division JP4286723B2 (ja) 2004-05-31 2004-05-31 半導体表示装置
JP2004160461A Division JP3999216B2 (ja) 2004-05-31 2004-05-31 半導体表示装置
JP2006186315A Division JP4057040B2 (ja) 2006-07-06 2006-07-06 半導体表示装置

Publications (3)

Publication Number Publication Date
JPH10319440A JPH10319440A (ja) 1998-12-04
JPH10319440A5 JPH10319440A5 (enExample) 2005-04-07
JP3998755B2 true JP3998755B2 (ja) 2007-10-31

Family

ID=15455066

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14854097A Expired - Lifetime JP3998755B2 (ja) 1997-05-22 1997-05-22 半導体表示装置

Country Status (1)

Country Link
JP (1) JP3998755B2 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6465268B2 (en) 1997-05-22 2002-10-15 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing an electro-optical device
JP4298131B2 (ja) 1999-05-14 2009-07-15 株式会社半導体エネルギー研究所 液晶表示装置の作製方法
US6680487B1 (en) 1999-05-14 2004-01-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor comprising a TFT provided on a substrate having an insulating surface and method of fabricating the same
JP4666723B2 (ja) 1999-07-06 2011-04-06 株式会社半導体エネルギー研究所 半導体装置の作製方法
TW459275B (en) 1999-07-06 2001-10-11 Semiconductor Energy Lab Semiconductor device and method of fabricating the same
US6639265B2 (en) 2000-01-26 2003-10-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the semiconductor device
JP4789369B2 (ja) * 2001-08-08 2011-10-12 株式会社半導体エネルギー研究所 表示装置及び電子機器
KR100652045B1 (ko) * 2001-12-21 2006-11-30 엘지.필립스 엘시디 주식회사 액정표시소자 및 그 제조방법
JP5005108B2 (ja) * 2011-11-15 2012-08-22 株式会社半導体エネルギー研究所 液晶表示装置
JP2013137568A (ja) * 2013-02-27 2013-07-11 Semiconductor Energy Lab Co Ltd 液晶表示装置
JP2014059583A (ja) * 2013-12-05 2014-04-03 Semiconductor Energy Lab Co Ltd 表示装置
WO2018037988A1 (ja) 2016-08-23 2018-03-01 シャープ株式会社 表示装置

Also Published As

Publication number Publication date
JPH10319440A (ja) 1998-12-04

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