JP3983341B2 - 炭化珪素、及び炭化珪素の製造方法 - Google Patents

炭化珪素、及び炭化珪素の製造方法 Download PDF

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Publication number
JP3983341B2
JP3983341B2 JP12308597A JP12308597A JP3983341B2 JP 3983341 B2 JP3983341 B2 JP 3983341B2 JP 12308597 A JP12308597 A JP 12308597A JP 12308597 A JP12308597 A JP 12308597A JP 3983341 B2 JP3983341 B2 JP 3983341B2
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Japan
Prior art keywords
silicon carbide
grown
silicon
layer
antiphase boundary
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Expired - Fee Related
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JP12308597A
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Japanese (ja)
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JPH10297998A5 (enExample
JPH10297998A (ja
Inventor
邦明 八木
弘幸 長澤
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Hoya Corp
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Hoya Corp
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Publication of JPH10297998A5 publication Critical patent/JPH10297998A5/ja
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  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
JP12308597A 1997-04-26 1997-04-26 炭化珪素、及び炭化珪素の製造方法 Expired - Fee Related JP3983341B2 (ja)

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JP12308597A JP3983341B2 (ja) 1997-04-26 1997-04-26 炭化珪素、及び炭化珪素の製造方法

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JP12308597A JP3983341B2 (ja) 1997-04-26 1997-04-26 炭化珪素、及び炭化珪素の製造方法

Publications (3)

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JPH10297998A JPH10297998A (ja) 1998-11-10
JPH10297998A5 JPH10297998A5 (enExample) 2005-03-17
JP3983341B2 true JP3983341B2 (ja) 2007-09-26

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JP12308597A Expired - Fee Related JP3983341B2 (ja) 1997-04-26 1997-04-26 炭化珪素、及び炭化珪素の製造方法

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Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3650727B2 (ja) 2000-08-10 2005-05-25 Ｈｏｙａ株式会社 炭化珪素製造方法
JP6702268B2 (ja) * 2017-06-15 2020-05-27 信越半導体株式会社 エピタキシャルウェーハの製造方法
KR20230021993A (ko) * 2021-08-06 2023-02-14 주성엔지니어링(주) SiC 기판의 제조 방법

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JPH10297998A (ja) 1998-11-10

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