JP3981300B2 - Wafer support member - Google Patents

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JP3981300B2
JP3981300B2 JP2002185064A JP2002185064A JP3981300B2 JP 3981300 B2 JP3981300 B2 JP 3981300B2 JP 2002185064 A JP2002185064 A JP 2002185064A JP 2002185064 A JP2002185064 A JP 2002185064A JP 3981300 B2 JP3981300 B2 JP 3981300B2
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heating element
resistance heating
wafer
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ceramic body
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JP2004031593A (en
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恒彦 中村
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Kyocera Corp
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Description

【０００１】
【発明の属する技術分野】
本発明は、主にウェハを加熱する際に用いるウェハ加熱装置に関するものであり、例えば半導体ウェハや液晶装置あるいは回路基板等のウェハ上に薄膜を形成したり、前記ウェハ上に塗布されたレジスト液を乾燥焼き付けしてレジスト膜を形成する際に好適なウェハ支持部材に関するものである。
【０００２】
【従来の技術】
半導体製造装置の製造工程における、半導体薄膜の成膜処理、エッチング処理、レジスト膜の焼き付け処理等においては、半導体ウェハ（以下、ウェハと略す）を加熱するためのウェハ支持部材が用いられている。
【０００３】
従来の半導体製造装置は、複数のウェハを一括して加熱するバッチ式と、１枚ずつ加熱する枚様式とがあり、枚葉式には、温度制御性に優れているので、半導体素子の配線の微細化とウェハ熱処理温度の精度向上が要求されるに伴い、ウェハ支持部材が広く使用されている。
【０００４】
このようなウェハ支持部材として、例えば特開２００１−２０３１５６号公報、特開２００１−３１３２４９号公報や特開２００２−７６１０２号公報には、図６に示すようなウェハ支持部材が提案されている。
【０００５】
このウェハ支持部材７１は、板状セラミック体７２、金属ケース７９、を主要な構成要素としたもので、アルミニウム等の金属からなる有底状の金属ケース７９の開口部に、窒化物セラミックスや炭化物セラミックスからなる板状セラミック体７２を樹脂製の断熱性の接続部材７４を介してボルト８０で固定され、その上面をウェハＷを載せる載置面７３とするとともに、板状セラミック体７２の下面に、例えば図１０に示すような同心円状の抵抗発熱体７５を備えるようになっていた。
【０００６】
さらに、抵抗発熱体７５の端子部には、給電端子７７がロウ付けされており、この給電端子７７が金属ケース７９の底部７９ａに形成されたリード線引出用の孔７６に挿通されたリード線７８と電気的に接続されるようになっていた。
【０００７】
ところで、このようなウェハ支持部材７１において、ウェハＷの表面全体に均質な膜を形成したり、レジスト膜の加熱反応状態を均質にするためには、ウェハの温度分布を均一にすることが重要である。その為、これまでウェハの面内の温度差を小さくするため、抵抗発熱体７５を分割し独立して温度を制御することが行われている。
【０００８】
特開平１１−１２１３８５号公報には、温度制御しやすい抵抗発熱体ブロックを複数備えたウェハ支持部材が開示されている。この抵抗発熱体は図７に示すように中心から放射状に４等分されたブロックを形成している。また、図８に示すように、外周部の抵抗発熱体は４つのブロックに分かれ、中心部の抵抗発熱体は円形のブロックに分かれたウェハ支持部材が開示されている。
【０００９】
また、特開平１１−３５４５３８号公報には、図９に示すように、同一の矩形状の平面形状を備え、互いに独立にまたは複数個づつ組み合わされて制御される８個の抵抗発熱体から構成され、その内４個の抵抗発熱体は、ウェハの周縁部を円周方向に４等分した円弧にそれぞれ対抗する位置に、矩形の長辺が前記円弧の中央を通るウェハの半径方向に対して垂直になる様に配置され、他の４個の抵抗発熱体は、前記４個の抵抗発熱体の内、円周方向で互いに１８０度離れた位置を占めるいずれかの２個の抵抗発熱体の中間に、それらに対して平行に並べて配置されたウェハ支持部材が開示されている。
【００１０】
しかし、いずれも非常に複雑で微妙な構造、制御が必要になるという課題があり、簡単な構造で温度分布を更に均一に加熱できるようなウェハ支持部材が求められていた。
【００１１】
【発明が解決しようとする課題】
近年生産効率の向上の為、ウェハサイズの大型化が進んでいるが、半導体素子自体も多様化し、必ずしも大判ウェハで製造することが生産効率の向上にはつながらず、ひとつの装置で、多種多様のウェハサイズや熱処理条件に対応可能な装置が望まれている。
【００１２】
更に、半導体素子の配線微細化に伴い使用され始めた化学増幅型レジストにおいては、ウェハの温度の均一性は勿論のこと、ウェハを熱処理装置に載置した瞬間から離脱し熱処理を終了させるまでの過渡的な温度履歴も極めて重要となり、ウェハ載置直後から概ね６０秒以内にウェハの温度が均一に安定することが望まれている。
【００１３】
しかしながら、特開２００２−７６１０２号公報や特開平１１−３５４５２８号公報に紹介されている装置では、板状セラミックス体の抵抗発熱体が形成された領域に相当する表面領域の内側に、半導体ウェハを直接或いは表面から一定の距離離間させて載置する領域が存在するウェハ支持部材が示されているが、ウェハの面内の温度差は０．５〜１℃と大きく、しかも板状セラミックス体の外周の低温領域の影響が大きく温度が安定するまでの応答時間が大きくなる虞があった。
【００１４】
また、特開平１１−１２１３８５号公報に記載のウェハ支持部材では図７に示した抵抗発熱体ゾーンでは、ウェハＷの周辺部と中心部の温度差を調整することができない虞があり、図８に示す抵抗発熱体ゾーンでは外周部と中心部の温度差を調整できてもその中間部の温度を調整できない虞があった。
【００１５】
更に、何れも金属製のヒータであり、ウェハＷを均一に加熱したり、ウェハＷを急速に昇温したり急速に降温させる時間が大きくなる虞があった。
【００１６】
【課題を解決するための手段】
本発明者等は、上記の課題について鋭意検討した結果、板状セラミックス体の一方の主面に複数の抵抗発熱体ゾーンを備え、他方の主面にウェハを載せる載置面を備えたウェハ支持部材であって、それぞれの前記抵抗発熱体ゾーンに対応して抵抗発熱体を備えるとともに、該抵抗発熱体に独立して電力を供給する給電部と、該給電部を囲む金属ケースとを有し、上記抵抗発熱体ゾーンは、中心部に備えた円形の抵抗発熱体ゾーンと、その外側の同心円の２つの円環状の抵抗発熱体ゾーンからなり、前記円形の抵抗発熱体ゾーンの外径Ｄ１は、最外周の抵抗発熱体ゾーンの外径Ｄの２５〜４５％であり、前記最外周の前記抵抗発熱体ゾーンの内径Ｄ２は前記最外周の前記抵抗発熱体ゾーンの外径Ｄの６０〜８５％であるとともに、前記２つの円環状の抵抗発熱体ゾーンのうち、内側の抵抗発熱体ゾーンは、円環を２等分した２個の扇状であり、外側の抵抗発熱体ゾーンは、円環を円周方向に４等分した４個の扇状であり、前記抵抗発熱体ゾーンの外接円の直径が前記板状セラミックス体の直径の９０〜９９％であることを特徴とする。
【００１９】
また、前記抵抗発熱体ゾーンの外接円の直径が前記板状セラミックス体の直径の９２〜９５％とする。
【００２０】
更に、前記抵抗発熱体ゾーンは、その前記外接円に接する円弧状パターンと、該円弧状パターンに連続して繋がった連結パターンとを備え、前記外接円の一部に存在する前記円弧状のパターンのない空白域の間隔が、前記板状セラミックス体と前記外接円の直径との差より小さくする。
【００２１】
特に、前記抵抗発熱体ゾーンを囲む外接円の面積に対し、上記外接円内に占める抵抗発熱体の面積の比率を１０〜３０％とする。
【００２２】
【発明の実施の形態】
以下、本発明の実施の形態について説明する。
【００２３】
図１は本発明に係るウェハ支持部材１の１例を示す断面図で、炭化珪素または窒化アルミニウムを主成分とするセラミックスからなる板状セラミックス体２の一方の主面を、ウェハＷを載せる載置面３とするとともに、他方の主面に抵抗発熱体５を形成し、該抵抗発熱体５に電気的に接続する給電部６を具備し、給電部６に給電端子１１が接続している。これらの給電部６を囲む金属ケース１９が接続部材１７を介して板状セラミックス体２の他方の主面の周辺部に固定されている。
【００２４】
また、ウェハリフトピン２５は板状セラミック体２を貫通する孔を通してウェハＷを上下に移動させウェハＷを載置面３に載せたり降ろしたりすることができる。そして、給電部６に給電端子１１が接続し外部から電力が供給され、測温素子２７で板状セラミックス体２の温度を測定しながらウェハＷを加熱することができる。
【００２５】
尚、ウェハＷは、ウェハ支持ピン８により載置面３から浮かした状態で保持され、ウェハＷの片当たり等による温度バラツキを防止するようにしている。また、抵抗発熱体５を複数のゾーンに分割する場合、それぞれのゾーンの温度を独立に制御することにより、各給電部６の給電端子１１に電力を供給し、各測温素子２７の温度が各設定値となるように給電端子１１に加える電力を調整し、載置面３に載せたウェハＷの表面温度が均一となるようにしている。
【００２６】
抵抗発熱体５には、金や銀、パラジウム、白金等の材質からなる給電部６が形成され、該給電部６に給電端子１１を接触させることにより、導通が確保されている。給電端子１１と給電部６とは、導通が確保できる方法で有れば、はんだ付け、ロー付け等の手法を用いてもよい。
【００２７】
ウェハＷの載置面３に対応して同心円環状に２つの抵抗発熱体ゾーン４に分割するのは、円板状のウェハＷの表面を均一に加熱するにはウェハＷ周辺の雰囲気やウェハＷに対抗する壁面やガスの流れの影響を受けるが、円板状のウェハＷの表面温度をばらつかせないために、ウェハＷの周囲や上面の対抗面や雰囲気ガスの流れはウェハＷに対し中心対称となるように設計されているからである。ウェハＷを均一に加熱するにはウェハＷに対し中心対称な上記環境に合わせたウェハ支持部材１が必要で、更に載置面３を中心対称に分割し抵抗発熱体ゾーン４を形成することが好ましい。
【００２８】
図２（ａ）は本発明のウェハ支持部材１で、板状セラミックス体の一方の主面に複数の抵抗発熱体ゾーン４を備え、中心部に円形の抵抗発熱体ゾーン４ａと、その外側に同心円の２つの円環内に抵抗発熱体ゾーン４ｂｃと抵抗発熱体ゾーン４ｄｇとを備える各抵抗発熱体ゾーン４の配置例を示す。
【００２９】
本発明の前記ウェハ支持部材１の中心部の抵抗発熱体ゾーン４ａの外形Ｄ１は外周部の抵抗発熱体ゾーン４ｄｇの外径Ｄの２５〜４５％であり、外周部の抵抗発熱体ゾーン４ｄｇの内径Ｄ２は外周部の抵抗発熱体ゾーンの外形Ｄの６０〜８５％であるとウェハＷの面内温度差を小さくすることができ好ましい。
【００３０】
尚、外周部の抵抗発熱体ゾーン４ｄｇの外径Ｄとは、板状セラミックス体２の他方の主面に平行な投影面でみて、前記抵抗発熱体ゾーン４ｄｇを構成する抵抗発熱体５ｄｇを囲む外接円の直径である。また、同様に、外周部の抵抗発熱体ゾーン４ｄｇの内径Ｄ２とは、前記抵抗発熱体ゾーン４ｄｇを構成する抵抗発熱体５ｄｇに内接する円の直径である。
【００３１】
外径Ｄ１がＤの２５％未満では中心部の抵抗発熱体ゾーン４ａの外形が小さ過ぎることから抵抗発熱体ゾーン４ａの発熱量を大きくしても、抵抗発熱体ゾーン４ａの中心部の温度が上がらず中心部の温度が低下する虞があるからである。また、外径Ｄ１が４５％を越えると中心部の抵抗発熱体ゾーン４ａの外形が大き過ぎることから抵抗発熱体ゾーン４ａの発熱量を充分に小さくする事ができず、抵抗発熱体ゾーン４ａの周辺部が抵抗発熱体ゾーン４ｂｃを加熱した際に温度が高くなり過ぎる虞があるからである。尚、好ましくは、外形Ｄ１はＤの３１〜３７％であり、更に好ましくは、外形Ｄ１はＤの３３〜３５％とすることでウェハＷの面内温度差を更に小さくすることができる。
【００３２】
また、内径Ｄ２が外形Ｄの６０％未満では、ウェハ支持部材１の周辺部が冷却され易いことから、ウェハＷ周辺の温度の低下を防ごうと抵抗発熱体ゾーン４ｄｇの発熱量を増大した際に、ウェハＷの中心に近い抵抗発熱体ゾーン４ｄｇの内側の温度が高くなり、ウェハＷの面内温度差が大きくなる虞があった。また、内径Ｄ２が外形Ｄの８５％を越えると、ウェハＷ周辺の温度の低下を防ごうと抵抗発熱体ゾーン４ｄｇの発熱量を大きくしても、抵抗発熱体ゾーン４ｄｇの温度は上がるが、ウェハＷ周辺の温度の低下の影響が抵抗発熱体ゾーン４ｂｃに達し、抵抗発熱体ゾーン４ｂｃの外側の温度が低くなる虞があった。好ましくは、内径Ｄ２が外形Ｄの６８％〜７８％であり、更に好ましくは７０〜７５％とするとウェハＷの面内温度差は更に小さくできた。
【００３３】
更に、ウェハ支持部材１の周囲の環境から生じる左右前後の微妙な非対称性や、対称な発熱体の厚みバラツキを補正できると、ウェハＷの面内温度差がより小さくなることがわかった。
【００３４】
図２（ｂ）は、本発明のウェハ支持部材１の中心部の円形の抵抗発熱体ゾーン４ａと、その外側に円環４ｂｃを２等分した扇状の２個の抵抗発熱体ゾーン４ｂ、４ｃを備え、更にその外側の円環４ｄｇ内にそれぞれ対抗する位置で円環を円周方向に４等分した扇状の４個の抵抗発熱体ゾーン４ｄ、４ｅ、４ｆ、４ｇからなるウェハ支持部材１であり、ウェハＷの表面温度がより均一となり好ましい。
【００３５】
上記ウェハ支持部材１の各抵抗発熱体ゾーン４ａ〜４ｇは独立して発熱でき、各抵抗発熱体ゾーン４ａ〜４ｇに対応して抵抗発熱体５ａ〜５ｇを備えている。
【００３６】
尚、円環状の抵抗発熱体ゾーン４ｂｃ、４ｄｇはそれぞれ放射方向に２分割、４分割したが、これに限るものではない。
【００３７】
図２（ｂ）の抵発熱体ゾーン４ｂ、４ｃの境界線は直線であるが、必ずしも直線である必要はなく、波線で有ってよい。抵抗発熱体ゾーン４ｂ、４ｃが板状セラミックス体２の中心に対して中心対称であることが好ましい。
【００３８】
同様に、抵抗発熱体ゾーンの４ｄと４ｅ、４ｅと４ｆ、４ｆと４ｇ、４ｇと４ｄとのそれぞれの境界線も必ずしも直線である必要はなく、それぞれの抵抗発熱体４ｄから４ｇは、板状セラミックス体２の中心に対し中心対称であることが好ましい。
【００３９】
上記の各抵抗発熱体５は、印刷法等で作製し、１〜５ｍｍの巾で厚みが５〜５０μｍで形成することが好ましい。一度に印刷する印刷面が大きくなると、印刷面の左右や前後でスキージとスクリーンとの間の圧力の違いから印刷厚みが一定とならない虞が生じる。特に、抵抗発熱体５の大きさが大きくなると、抵抗発熱体５の左右前後の厚みが異なり設計した発熱量がバラツク虞があった。発熱量がバラツクとウェハＷの面内温度差が大きくなり好ましくない。この抵抗発熱体の厚みのバラツキから生じる温度バラツキを防ぐには、一つの抵抗発熱体からなる外径の大きな個々の抵抗発熱体５を分割することが有効である事が判明した。
【００４０】
そこで、ウェハＷ載置面３の中心部を除く同心円環状の抵抗発熱体ゾーンは左右に２分割し、更に大きな円環状の抵抗発熱体ゾーンは４分割することで抵抗発熱体ゾーン４にある抵抗発熱体５を印刷する大きさを小さくすることができることから、抵抗発熱体５の各部の厚みを均一にすることができ、更にウェハＷの前後左右の微妙な温度差を補正しウェハＷの表面温度を均一にすることができる。
【００４１】
尚、図３に示す抵抗発熱体５ｂ、５ｃ、５ｄ、５ｅ、５ｆ、５ｇのパターンは夫々折り返しパターンからなり、図４に示す抵抗発熱体５ｂ、５ｃ、５ｄ、５ｅ、５ｆ、５ｇのパターンは夫々渦巻き状となっている。また、これらのパターンを複合したパターンでも良い。
【００４２】
また、本発明のウェハ支持部材１は、板状セラミックス体２の一方の主面に抵抗発熱体５を備えたウェハ支持部材１であって、図３に示すように板状セラミックス体２の外周部に位置する前記抵抗発熱体５ｄ、５ｅ、５ｄ、５ｆは板状セラミックス体２の中心から遠い部位は同心円状をした円弧状パターン５１とこれらと連続して繋がっている連結パターン５２からなることが好ましい。前記抵抗発熱体５に電力を供給する給電部６と、該給電部６を囲む金属ケース１９とからなり、前記板状セラミックス体２の他方の主面にウェハ加熱面を備え、前記抵抗発熱体５の外接円Ｃの直径Ｄが前記板状セラミックス体２の直径ＤＰの９０〜９９％であることが好ましい。
【００４３】
抵抗発熱体５の外接円Ｃの直径Ｄが板状セラミックス体２の直径ＤＰの９０％より小さいと、ウェハを急速に昇温したり急速に降温させる時間が大きくなりウェハＷの温度応答特性が劣る。また、ウェハＷの周辺部の温度を下げないようウェハＷの表面温度を均一に加熱するには、直径ＤはウェハＷの直径の１．０２倍程度が好ましいことから、ウェハＷの大きさに対して板状セラミックス体２の直径ＤＰが大きくなり、均一に加熱できるウェハＷの大きさが板状セラミックス体２の直径ＤＰに比較して小さくなり、ウェハＷを加熱する投入電力に対しウェハＷを加熱する加熱効率が悪くなる。更に、板状セラミックス体２が大きくなることからウェハ製造装置の設置面積が大きくなり、最小の設置面積で最大の生産を行う必要がある半導体製造装置の設置面積に対する稼働率を低下させ好ましくない。
【００４４】
抵抗発熱体５の外接円Ｃの直径Ｄが板状セラミックス体２の直径ＤＰの９９％より大きいと接触部材１７と抵抗発熱体５の外周との間隔が小さく抵抗発熱体５の外周部から熱が接触部材１７に不均一に流れ、特に、外周部の外接円Ｃに接する円弧状パターン５１が存在しない部分からも熱が流れ、外周部の円弧状パターン５１が板状セラミックス体２の中心部へ曲がっていることから抵抗発熱体５を囲む外接円Ｃに沿って円弧状パターン５１が欠落する部分Ｐの温度が低下しウェハＷの面内温度差を大きくする虞がある。より好ましくは、抵抗発熱体５の外接円Ｃの直径Ｄが板状セラミックス体２の直径ＤＰの９２〜９７％である。
【００４５】
また、図１に示す様に板状セラミックス体２と金属ケース１９の外形が略同等で板状セラミックス体２を下から金属ケース１９が支える場合、ウェハＷの面内の温度差を小さくするには、抵抗発熱体５の外接円Ｃの直径Ｄが板状セラミックス体２の直径ＤＰの９２〜９５％であり、更に好ましくは９３〜９５％である。
【００４６】
一方、図５に示す様な板状セラミックス体２の外周面を覆うように金属ケースが接続した場合には、抵抗発熱体５の外接円Ｃの直径Ｄが板状セラミックス体２の直径ＤＰの９５〜９８％が好ましく、更に好ましくは９６〜９７％である。
【００４７】
更に、本発明のウェハ支持部材１において、例えば図３の抵抗発熱体５の外接円Ｃと接する円弧状パターン５１と、該円弧状パターン５１と連続して繋がった連結パターン５２とを備え、前記外接円Ｃの一部に前記円弧状のパターンのない空白域Ｐの間隔Ｓが、前記板状セラミックス体の直径Ｄと前記外接円Ｃの直径ＤＣとの差（以下、Ｌと略する）より小さいことが好ましい。間隔ＳがＬより大きいと空白域Ｐの熱が板状セラミックス体の周辺部へ流れ空白域Ｐの温度が下がる虞がある。しかし、間隔ＳがＬより小さいと空白域Ｐの温度が下がり難く板状セラミックス体２の載置面３に載せたウェハＷの周辺部の一部の温度が低下せずウェハＷ面内の温度差が小さくなり好ましい。
【００４８】
上記空白域Ｐの温度を下げないためには、空白域の温度を上げる必要があり、空白域を加熱する連結パターン５２の抵抗を同等か或いは大きくして発熱量を増大すると、空白域Ｐの温度が下がる虞が小さくなり、ウェハＷの面内温度が均一となり好ましい。印刷法等で作成した抵抗発熱体５が面状の場合、円弧状パターン５１の線巾Ｗｐより連結パターン５２の線巾Ｗｓを小さくすることで連結パターン５２の抵抗を大きくすることができ、連結パターン５２の温度を円弧状パターン５１の温度より高めることでウェハＷの面内温度を均一とすることができる。
【００４９】
板厚が１〜７ｍｍの板状セラミックス体２の一方の主面側を、ウェハを載せる載置面３とするとともに、上記板状セラミックス体２の下面に抵抗発熱体５を備えたウェハ支持部材１において、上記抵抗発熱体５の厚みが５〜５０μｍであるとともに、上記抵抗発熱体を囲む外接円Ｃの面積に対し、上記外接円Ｃに占める抵抗発熱体５の面積の比率が５〜５０％であることが好ましい。
【００５０】
即ち、抵抗発熱体５を囲む外接円Ｃの面積に対し、外接円Ｃ内に占める抵抗発熱体５の面積の比率を５％未満とすると、抵抗発熱体５の相対向する対向領域において、対向領域の対向間隔Ｓ１が大きくなり過ぎることから、抵抗発熱体５のない間隔Ｓ１に対応した載置面３の表面温度が他の部分と比較して小さくなり、載置面３の温度を均一にすることが難しいからであり、逆に抵抗発熱体５を囲む外接円Ｃの面積に対し、外接円Ｃ内に占める抵抗発熱体５の面積の比率が５０％を超えると、板状セラミック体２と抵抗発熱体５との間の熱膨張差を３．０×１０−６／℃以下に近似させたとしても、両者の間に作用する熱応力が大きすぎることから、板状セラミック体２は変形し難いセラミック焼結体からなるものの、その板厚ｔが１ｍｍ〜７ｍｍと薄いこと、から抵抗発熱体５を発熱させると、載置面３側が凹となるように板状セラミック体２に反りが発生し、その結果、ウェハＷの中心部の温度が周縁よりも小さくなり、温度バラツキが大きくなる虞があるからである。
【００５１】
なお、好ましくは、抵抗発熱体５を囲む外接円Ｃの面積に対し、外接円Ｃ内に占める抵抗発熱体５の面積の比率を１０％〜３０％、さらには１５％〜２５％とすることが好ましい。
【００５２】
より具体的には、抵抗発熱体５は外周部に相対抗する対抗領域を有し、上記対抗領域の間隔Ｓ１が０．５ｍｍ以上で、上記板状セラミックス体２の板厚の３倍以下であることが好ましい。上記対抗領域の間隔Ｓ１が０．５ｍｍ以下では抵抗発熱体５を印刷し形成する際に抵抗発熱体５の対抗領域でひげ状の突起が発生しその部分が短絡する虞がある。また、上記対抗領域の間隔Ｓ１が板状セラミックス体２の厚みの３倍を越えると、対抗領域Ｓ１に対応するウェハＷの表面にクールゾーンが発生しウェハＷの面内温度差を大きくする虞があるからである。
【００５３】
さらに、このような効果を効率良く発現させるには、抵抗発熱体５の膜厚を５〜５０μｍとすることが好ましい。
【００５４】
抵抗発熱体５の膜厚が５μｍを下回ると、抵抗発熱体５をスクリーン印刷法で膜厚を均一に印刷することが困難となるからであり、また、抵抗発熱体５の厚みが５０μｍを越えると、外接円Ｐ１に対し、抵抗発熱体５の占める面積の比率を５０％以下としても抵抗発熱体５の厚みが大きく、抵抗発熱体５の剛性が大きくなり、板状セラミック体５の温度変化により抵抗発熱体５の伸び縮みによる影響で板状セラミック体２が変形する虞がある。また、スクリーン印刷で均一の厚みに印刷することが難しくウェハＷの表面の温度差が大きくなったりする虞があるからである。なお、好ましい抵抗発熱体５の厚みは１０〜３０μｍとすることが良い。
【００５５】
更に詳細な構成について説明する。
【００５６】
図１は本発明に係るウェハ支持部材の一例を示す断面図で、板厚ｔが１〜７ｍｍ、１００〜２００℃のヤング率が２００〜４５０ＭＰａである板状セラミック体２の一方の主面を、ウェハＷを載せる載置面３とするとともに、他方の主面に抵抗発熱体５を形成し、この抵抗発熱体５に電気的に接続する給電部６を備えたものである。
【００５７】
１００〜２００℃のヤング率が２００〜４５０ＭＰａである板状セラミック体２の材質としては、アルミナ、窒化珪素、サイアロン、窒化アルミニウムを用いることができ、この中でも特に窒化アルミニウムは５０Ｗ／（ｍ・Ｋ）以上、さらには１００Ｗ／（ｍ・Ｋ）以上の高い熱伝導率を有するとともに、フッ素系や塩素系等の腐食性ガスに対する耐蝕性や耐プラズマ性にも優れることから、板状セラミック体２の材質として好適である。
【００５８】
板状セラミックス体２の厚みは、２〜５ｍｍとすると更に好ましい。板状セラミックス体２の厚みが２ｍｍより薄いと、板状セラミックス体２の強度がなくなり抵抗発熱体５の発熱による加熱時、ガス噴射口２４らの冷却エアーを吹き付けた際に、冷却時の熱応力に耐えきれず、板状セラミックス体２にクラックが発生する虞があるからである。また、板状セラミックス体２の厚みが５ｍｍを越えると、板状セラミックス体２の熱容量が大きくなるので加熱および冷却時の温度が安定するまでの時間が長くなる虞がある。
【００５９】
板状セラミックス体２は、有底の金属ケース１９の開口部の外周にボルト１６を貫通させ、板状セラミックス体２と有底の金属ケース１９が直接当たらないように、リング状の接触部材１７を介在させ、有底の金属ケース１９側より弾性体１８を介在させてナット２０を螺着することにより弾性的に固定している。これにより、板状セラミックス体２の温度が変動した場合に有底の金属ケース１９が変形しても、上記弾性体１８によってこれを吸収し、これにより板状セラミックス体２の反りを抑制し、ウェハ表面に、板状セラミックス体２の反りに起因する温度ばらつきが発生することを防止できるようになる。
【００６０】
リング状の接触部材１７の断面は多角形や円形の何れでも良いが、板状セラミックス体２と接触部材１７が平面で接触する場合において、板状セラミックス体２と接触部材１７の接する接触部の巾は０．１ｍｍ〜１３ｍｍであれば、板状セラミックス体２の熱が接触部材１７を介して有底の金属ケース１９に流れ量を小さくすることをができる。そして、ウェハＷの面内の温度差が小さくウェハＷを均一に加熱することができる。更に好ましくは０．１〜８ｍｍである。接触部材１７の接触部の巾が０．１ｍｍ以下では、板状セラミックス体２と接触固定した際に接触部が変形し、接触部材が破損する虞がある。また、接触部材１７の接触部の巾が１３ｍｍを越える場合には、板状セラミックス体２の熱が接触部材に流れ、板状セラミックス体２の周辺部の温度が低下しウェハＷを均一に加熱することが難しくなる。好ましくは接触部材１７と板状セラミックス体２の接触部の巾は０．１ｍｍ〜８ｍｍであり、更に好ましくは０．１〜２ｍｍである。
【００６１】
また、接触部材１７の熱伝導率は板状セラミックス体２の熱伝導率より小さいことが好ましい。接触部材１７の熱伝導率が板状セラミックス体２の熱伝導率より小さければ板状セラミックス体２に載せたウェハＷ面内の温度分布を均一に加熱することができると共に、板状セラミックス体２の温度を上げたり下げたりする際に、接触部材１７との熱の伝達量が小さく有底の金属ケース１９との熱的干渉が少なく、迅速に温度を変更することが容易となる。
【００６２】
接触部材１７の熱伝導率が板状セラミックス体２の熱伝導率の１０％より小さいウェハ支持部材１では、板状セラミックス体２の熱が有底の金属ケース１９に流れ難く、板状セラミックス体２から有底の金属ケース１９に熱が、雰囲気ガス（ここでは空気）による伝熱や輻射伝熱により流れる熱が多くなり逆に効果が小さい。
【００６３】
接触部材１７の熱伝導率が板状セラミックス体２の熱伝導率より大きい場合には、板状セラミックス体２の周辺部の熱が接触部材１７を介して有底の金属ケース１９に流れ、有底の金属ケース１９を加熱すると共に、板状セラミックス体２の周辺部の温度が低下しウェハＷ面内の温度差が大きくなり好ましくない。また、有底の金属ケース１９が加熱されることからガス噴射口２４からエアを噴射し板状セラミックス体２を冷却しようとしても有底の金属ケース１９の温度が高いことから冷却する時間が大きくなったり、一定温度に加熱する際に一定温度になるまでの時間が大きくなる虞があった。
【００６４】
一方、前記接触部材１７を構成する材料としては、小さな接触部を保持するために、接触部材のヤング率は１ＧＰａ以上が好ましく、更に好ましくは１０ＧＰａ以上である。このようなヤング率とすることで、接触部の巾が０．１ｍｍ〜８ｍｍと小さく、板状セラミックス体２を有底の金属ケース１９に接触部材１７を介してボルト１６で固定しても、接触部材１７が変形することが無く、板状セラミックス体２が位置ズレしたり平行度が変化したりすることなく、精度良く保持することができる。
尚、特開２００１−３１３２４９号公報に記載のような、フッ素系樹脂やガラス繊維を添加した樹脂からなる接触部材では得られない精度を達成することができる。
【００６５】
前記接触部材１７の材質としては鉄とカーボンからなる炭素鋼やニッケル、マンガン、クロムを加えた特殊鋼等の金属がヤング率が大きく好ましい。また、熱伝導率の小さな材料としては、ステンレス鋼やＦｅ―Ｎｉ−Ｃｏ系合金の所謂コバールが好ましく、板状セラミックス体２の熱伝導率より小さくなるように接触部材１７の材料を選択することが好ましい。
【００６６】
更に、接触部材１７と板状セラミックス体２との接触部を小さく、且つ接触部が小さくても接触部が欠損しパーティクルを発生する虞が小さく安定な接触部を保持できるために、板状セラミックス体２に垂直な面で切断した接触部材１７の断面は多角形より円形が好ましく、断面の直径１ｍｍ以下の円形のワイヤを接触部材１７として使用すると板状セラミックス体２と有底の金属ケース１９の位置が変化することなくウェハＷの表面温度を均一にしかも迅速に昇降温することが可能である。
【００６７】
次に、有底の金属ケース１９は側壁部２２と底面２１を有し、板状セラミックス体２はその有底の金属ケース１９の開口部を覆うように設置してある。また、有底の金属ケース１９には冷却ガスを排出するための孔２３が施されており、板状セラミックス体２の抵抗発熱体５に給電するための給電部６に導通するための給電端子１１，板状セラミックス体２を冷却するためのガス噴射口２４、板状セラミックス体２の温度を測定するための熱電対２７を設置してある。
【００６８】
なお、有底の金属ケース１９の深さは１０〜５０ｍｍで、底面２１は、板状セラミックス体２から１０〜５０ｍｍの距離に設置することが望ましい。更に好ましくは２０〜３０ｍｍである。これは、板状セラミックス体２と有底の金属ケース１９相互の輻射熱により載置面３の均熱化が容易となると同時に、外部との断熱効果があるので、載置面３の温度が一定で均一な温度となるまでの時間が短くなるためである。
【００６９】
そして、有底の金属ケース１９内に昇降自在に設置されたリフトピン２５により、ウェハＷを載置面３上に載せたり載置面３より持ち上げたりといった作業がなされる。そして、ウェハＷは、ウェハ支持ピン８により載置面３から浮かした状態で保持され、片当たり等による温度バラツキを防止するようにしている。
【００７０】
また、このウェハ加熱装置１によりウェハＷを加熱するには、搬送アーム（不図示）にて載置面３の上方まで運ばれたウェハＷをリフトピン２５にて支持したあと、リフトピン２５を降下させてウェハＷを載置面３上に載せる。
【００７１】
次に、ウェハ支持部材１をレジスト膜形成用として使用する場合は、板状セラミックス体２の主成分を炭化珪素にすると、大気中の水分等と反応してガスを発生させることもないため、ウェハＷ上へのレジスト膜の貼付に用いたとしても、レジスト膜の組織に悪影響を与えることがなく、微細な配線を高密度に形成することが可能である。この際、焼結助剤に水と反応してアンモニアやアミンを形成する可能性のある窒化物を含まないようにすることが必要である。
【００７２】
なお、板状セラミックス体２を形成する炭化珪素質焼結体は、主成分の炭化珪素に対し、焼結助剤として硼素（Ｂ）と炭素（Ｃ）を添加したり、もしくはアルミナ（Ａｌ2Ｏ3）イットリア（Ｙ2Ｏ3）のような金属酸化物を添加して十分混合し、平板状に加工したのち、１９００〜２１００℃で焼成することにより得られる。炭化珪素はα型を主体とするものあるいはβ型を主体とするもののいずれであっても構わない。
【００７３】
一方、炭化珪素質焼結体を板状セラミックス体２として使用する場合、半導電性を有する板状セラミックス体２と抵抗発熱体５との間の絶縁を保つ絶縁層としては、ガラス又は樹脂を用いることが可能であり、ガラスを用いる場合、その厚みが１００μｍ未満では耐電圧が１．５ｋＶを下回り絶縁性が保てず、逆に厚みが４００μｍを越えると、板状セラミックス体２を形成する炭化珪素質焼結体や窒化アルミニウム質焼結体との熱膨張差が大きくなり過ぎるために、クラックが発生して絶縁層として機能しなくなる。その為、絶縁層としてガラスを用いる場合、絶縁層４の厚みは１００〜４００μｍの範囲で形成することが好ましく、望ましくは２００μｍ〜３５０μｍの範囲とすることが良い。
【００７４】
さらに、板状セラミックス体２の載置面３と反対側の主面は、ガラスや樹脂からなる絶縁層４との密着性を高める観点から、平面度２０μｍ以下、面粗さを中心線平均粗さ（Ｒａ）で０．１μｍ〜０．５μｍに研磨しておくことが好ましい。
【００７５】
また、板状セラミックス体２を、窒化アルミニウムを主成分とする焼結体で形成する場合は、主成分の窒化アルミニウムに対し、焼結助剤としてＹ2Ｏ3やＹｂ2Ｏ3等の希土類元素酸化物と必要に応じてＣａＯ等のアルカリ土類金属酸化物を添加して十分混合し、平板状に加工した後、窒素ガス中１９００〜２１００℃で焼成することにより得られる。板状セラミックス体２に対する抵抗発熱体５の密着性を向上させるために、ガラスからなる絶縁層を形成することもある。ただし、抵抗発熱体５の中に十分なガラスを添加し、これにより十分な密着強度が得られる場合は、省略することが可能である。
【００７６】
この絶縁層を形成するガラスの特性としては、結晶質又は非晶質のいずれでも良く、耐熱温度が２００℃以上でかつ０℃〜２００℃の温度域における熱膨張係数が板状セラミックス体２を構成するセラミックスの熱膨張係数に対し−５〜＋５×１０-7／℃の範囲にあるものを適宜選択して用いることが好ましい。即ち、熱膨張係数が前記範囲を外れたガラスを用いると、板状セラミックス体２を形成するセラミックスとの熱膨張差が大きくなりすぎるため、ガラスの焼付け後の冷却時においてクラックや剥離等の欠陥が生じ易いからである。
【００７７】
なお、ガラスからなる絶縁層を板状セラミックス体２上に被着する手段としては、前記ガラスペーストを板状セラミックス体２の中心部に適量落とし、スピンコーティング法にて伸ばして均一に塗布するか、あるいはスクリーン印刷法、ディッピング法、スプレーコーティング法等にて均一に塗布したあと、ガラスペーストを６００℃以上の温度で焼き付けすれば良い。また、絶縁層としてガラスを用いる場合、予め炭化珪素質焼結体又は窒化アルミニウム質焼結体からなる板状セラミックス体２を８５０〜１３００℃程度の温度に加熱し、絶縁層を被着する表面を酸化処理しておくことで、ガラスからなる絶縁層との密着性を高めることができる。
【００７８】
本発明の抵抗発熱体５のパターン形状としては、図２に示したような折り返しパターン、あるいは図３や図４に示すような複数のブロックに分割され、個々のブロックが円弧状のパターンと直線状のパターンとからなる渦巻き状やジグザクな折り返し形状をしたもので、本願発明のウェハ支持部材１はウェハＷを均一に加熱することが重要であることから、これらのパターン形状は帯状の抵抗発熱体５の各部の密度が均一なことが好ましい。ただし、図７に示すような、板状セラミック体２２の中心から放射方向に見て、抵抗発熱体２５の間隔が密な部分と粗な部分が交互に現れる抵抗発熱体パターンでは、粗な部分に対応するウェハＷの表面温度は小さく、密な部分に対応するウェハＷの温度は大きくなり、ウェハＷの表面の全面を均一に加熱することはできないことから好ましくない。
【００７９】
また、抵抗発熱体５を複数のブロックに分割する場合、それぞれのブロックの温度を独立に制御することにより、載置面３上のウェハＷを均一に加熱することが好ましい。
【００８０】
抵抗発熱体５は、導電性の金属粒子にガラスフリットや金属酸化物を含む電極ペーストを印刷法で板状セラミック体２に印刷、焼き付けしたもので、金属粒子としては、Ａｕ、Ａｇ、Ｃｕ、Ｐｄ、Ｐｔ、Ｒｈの少なくとも一種の金属を用いることが好ましく、またガラスフリットとしては、Ｂ、Ｓｉ、Ｚｎを含む酸化物からなり、板状セラミック体２の熱膨張係数より小さな４．５×１０-6／℃以下の低膨張ガラスを用いることが好ましく、さらに金属酸化物としては、酸化珪素、酸化ホウ素、アルミナ、チタニアから選ばれた少なくとも一種を用いることが好ましい。
【００８１】
ここで、抵抗発熱体５を形成する金属粒子として、Ａｕ、Ａｇ、Ｃｕ、Ｐｄ、Ｐｔ、Ｒｈの少なくとも一種の金属を用いるのは、電気抵抗が小さいからである。
【００８２】
抵抗発熱体５を形成するガラスフリットとして、Ｂ、Ｓｉ、Ｚｎを含む酸化物からなり、抵抗発熱体５を構成する金属粒子の熱膨張係数が板状セラミック体２の熱膨張係数より大きいことから、抵抗発熱体５の熱膨張係数を板状セラミック体２の熱膨張係数に近づけるには、板状セラミック体２の熱膨張係数より小さな４．５×１０-6／℃以下の低膨張ガラスを用いることが好ましいからである。
【００８３】
また、抵抗発熱体５を形成する金属酸化物としては、酸化珪素、酸化ホウ素、アルミナ、チタニアから選ばれた少なくとも一種を用いるのは、抵抗発熱体５の中の金属粒子と密着性が優れ、しかも熱膨張係数が板状セラミック体２の熱膨張係数と近く、板状セラミック体２との密着性も優れるからである。
【００８４】
ただし、抵抗発熱体５に対し、金属酸化物の含有量が８０％を超えると、板状セラミック体２との密着力は増すものの、抵抗発熱体５の抵抗値が大きくなり好ましくない。その為、金属酸化物の含有量は６０％以下とすることが良い。
【００８５】
そして、導電性の金属粒子とガラスフリットや金属酸化物からなる抵抗発熱体５は、板状セラミック体２との熱膨張差が３．０×１０-6／℃以下であるものを用いることが好ましい。
【００８６】
即ち、抵抗発熱体５と板状セラミック体２との熱膨張差を０．１×１０−６／℃とすることは製造上難しく、逆に抵抗発熱体５と板状セラミック体２との熱膨張差が３．０×１０−６／℃を超えると、抵抗発熱体５を発熱させた時、板状セラミック体２との間に作用する熱応力によって、載置面３側が凹状に反る虞があるからである。
【００８７】
さらに、絶縁層上に被着する抵抗発熱体５材料としては、金（Ａｕ）、銀（Ａｇ）、銅（Ｃｕ）、パラジウム（Ｐｄ）等の金属単体を、蒸着法やメッキ法にて直接被着するか、あるいは前記金属単体や酸化レニウム（Ｒｅ2Ｏ3）、ランタンマンガネート（ＬａＭｎＯ3）等の導電性の金属酸化物や上記金属材料を樹脂ペーストやガラスペーストに分散させたペーストを用意し、所定のパターン形状にスクリーン印刷法等にて印刷したあと焼付けして、前記導電材を樹脂やガラスから成るマトリックスで結合すれば良い。マトリックスとしてガラスを用いる場合、結晶化ガラス、非晶質ガラスのいずれでも良いが、熱サイクルによる抵抗値の変化を抑えるために結晶化ガラスを用いることが好ましい。
【００８８】
ただし、抵抗発熱体５材料に銀（Ａｇ）又は銅（Ｃｕ）を用いる場合、マイグレーションが発生する虞があるため、このような場合には、抵抗発熱体５を覆うように絶縁層と同一の材質からなるコート層を４０〜４００μｍ程度の厚みで被覆しておけば良い。
【００８９】
更に、抵抗発熱体５への給電方法については、有底の金属ケース１９に設置した給電端子１１を板状セラミックス体２の表面に形成した給電部６にバネ（不図示）で押圧することにより接続を確保し給電する。これは、２〜５ｍｍの厚みの板状セラミックス体２に金属からなる端子部を埋設して形成すると、該端子部の熱容量により均熱性が悪くなるからである。そのため、本発明のように、給電端子１１をバネで押圧して電気的接続を確保することにより、板状セラミックス体２とその有底の金属ケース１９の間の温度差による熱応力を緩和し、高い信頼性で電気的導通を維持できる。さらに、接点が点接触となるのを防止するため、弾性のある導体を中間層として挿入しても構わない。この中間層は単に箔状のシートを挿入するだけでも効果がある。そして、給電端子１１の給電部６側の径は、１．５〜５ｍｍとすることが好ましい。
【００９０】
また、板状セラミックス体２の温度は、板状セラミックス体２にその先端が埋め込まれた熱電対２７により測定する。熱電対２７としては、その応答性と保持の作業性の観点から、外径０．８ｍｍ以下のシース型の熱電対２７を使用することが好ましい。この熱電対２７の先端部は、板状セラミックス体２に孔が形成され、この中に設置された固定部材により孔の内壁面に押圧固定することが測温の信頼性を向上させるために好ましい。同様に素線の熱電対やＰｔ等の測温抵抗体を埋設して測温を行うことも可能である。
【００９１】
なお、板状セラミック体２の一方の主面には、図５に示すように、複数の支持ピン８を設け、板状セラミック体２の一方の主面より一定の距離をおいてウェハＷを保持するようにしても構わない。
【００９２】
また、図１では板状セラミック体２の他方の主面３に抵抗発熱体５のみを備えたウェハ支持部材１について示したが、本発明は、主面３と抵抗発熱体５との間に静電吸着用やプラズマ発生用としての電極を埋設したものであっても良いことは言うまでもない。
【００９３】
【実施例】
（実施例 １）
まず、窒化アルミニウム粉末に対し、重量換算で１．0質量％の酸化イットリウムを添加し、さらにイソプロピルアルコールとウレタンボールを用いてボールミルにより４８時間混練することにより窒化アルミニウムのスラリーを製作した。
【００９４】
次に、窒化アルミニウムのスラリーを２００メッシュに通し、ウレタンボールやボールミル壁の屑を取り除いた後、防爆乾燥機にて１２０℃で２４時間乾燥した。
【００９５】
次いで、得られた窒化アルミニウム粉末にアクリル系のバインダーと溶媒を混合して窒化アルミニムのスリップを作製し、ドクターブレード法にて窒化アルミニムのグリーンシートを複数枚製作した。
【００９６】
そして、得られた窒化アルミニムのグリーンシートを複数枚積層熱圧着にて積層体を形成した。
【００９７】
しかる後、積層体を非酸化性ガス気流中にて５００℃の温度で５時間脱脂を施した後、非酸化性雰囲気にて１９００℃の温度で５時間の焼成を行い各種の熱伝導率を有する板状セラミックス体を製作した。
【００９８】
そして、窒化アルミニウム焼結体に研削加工を施し、板厚３ｍｍ、直径３１５ｍｍ〜３３０ｍｍの円盤状をした板状セラミックス体２を複数枚製作し、更に中心から６０ｍｍの同心円上に均等に３箇所貫通孔を形成した。貫通口径は、４ｍｍとした。
【００９９】
次いで板状セラミックス体２の上に抵抗発熱体５を被着するため、導電材としてＡｕ粉末とＰｄ粉末と、前記同様の組成からなるバインダーを添加したガラスペーストを混練して作製した導電体ペーストをスクリーン印刷法にて所定のパターン形状に印刷したあと、１５０℃に加熱して有機溶剤を乾燥させ、さらに５５０℃で３０分間脱脂処理を施したあと、７００〜９００℃の温度で焼き付けを行うことにより、厚みが５０μｍの抵抗発熱体５を形成した。
【０１００】
抵抗発熱体ゾーン４の配置は、中心部に直径Ｄ１ｍｍの円形の１つに抵抗発熱体ゾーンを形成し、その外側の円環を同等の２つの抵抗発熱体ゾーンに分割し、更にその外側に内径Ｄ２ｍｍの円環を４つの抵抗発熱体ゾーンに分割した計７個の抵抗発熱体ゾーン構成とした。そして、最外周の４つの抵抗発熱体ゾーンの外接円Ｃの直径を３１０ｍｍとしＤ１とＤ２の比率を変えた試料を作製した。しかるのち抵抗発熱体５に給電部６をロウ付けし固着させることにより、板状セラミックス体２を製作した。
【０１０１】
また、比較用として図９の構成の抵抗発熱体ゾーンとし、矩形の発熱体ゾーンの大きさは２１２×５３ｍｍとして、矩形の発熱体ゾーンを８個用いた試料Ｎｏ．２１を作製した。同様に試料Ｎｏ．２２は図８に示す構成の抵抗発熱体ゾーンで、Ｄ1ｒを１５０ｍｍとし、Ｄ２rは３１０ｍｍとした。試料Ｎｏ．２３は図７に示す構成の抵抗発熱体ゾーンの形状とした。
【０１０２】
また、有底の金属ケースの底面の厚みは２．０ｍｍのアルミニウムと側壁部を構成する厚み１．０ｍｍのアルミニウムからなり、底面に、ガス噴射口、熱電対、導通端子を所定の位置に取り付けた。また、底面から板状セラミックス体までの距離は２０ｍｍとした。
【０１０３】
その後、前記有底の金属ケースの開口部に、板状セラミックス体を重ね、その外周部にボルトを貫通させ、板状セラミックス体と有底の金属ケースが直接当たらないように、リング状の接触部材を介在させ、接触部材側より弾性体を介在させてナットを螺着することにより弾性的に固定することによりウェハ支持部材とした。
【０１０４】
また、板状セラミックス体の周辺部下面を支持する支持構造（１）と、板状セラミックス体の外周面を支持する支持構造（２）との２つの構造でウェハ支持部材を作製した。尚、支持構造（１）では、板状セラミックス体の直径と金属ケースの外形である直径を同じとした。
【０１０５】
尚、接触部材１７の断面は円形状で、リング状とした。円形状の断面の大きさは、直径１ｍｍとした。また、接触部材の材質はＳＵＳ３０４、炭素鋼を用いた。作製した各種のウェハ支持部材を試料Ｎｏ.１〜２４とした。
【０１０６】
作製したウェハ支持部材の評価は、測温抵抗体が２９箇所に埋設された直径３００ｍｍの測温用ウェハを用いて行った。夫々のウェハ支持部材に電源を取り付け２５℃から２００℃まで５分間でウェハＷを昇温し、ウェハＷの温度を２００℃に設定してからウェハＷの平均温度が２００℃±０．５℃の範囲で一定となるまでの時間を応答時間として測定した。また、３０℃から２００℃に５分で昇温し５分間保持した後、３０分間冷却する温度サイクルを１０００サイクル繰り返した後、室温から２００℃に設定し１０分後のウェハ温度の最大値と最小値の差をウェハＷの温度差として測定した。
【０１０７】
それぞれの結果は表１に示す通りである。
【０１０８】
【表１】

Figure 0003981300
【０１０９】
本願発明のウェハ支持部材１で、中心部に円形の抵抗発熱体ゾーンと、その外側の同心円の２つの円環内に抵抗発熱体ゾーンを備えた試料Ｎｏ．１〜２０のウェハ支持部材１はウェハＷの温度差は０．６１℃未満で且つ応答時間は６０秒未満と優れていた。また、中心部の抵抗発熱体ゾーンの外形Ｄ１はその最外周の抵抗発熱体ゾーンの外径Ｄの２５〜４５％であり、最外周の抵抗発熱体ゾーンの内径Ｄ２は最外周の抵抗発熱体ゾーンの外形Ｄの６０〜８５％であるウェハ支持部材１は、表１の試料Ｎｏ．２〜９、１２〜１９であり、ウェハＷの温度差は０．４４℃以下と小さく、しかも応答時間は４９秒以下と小さく優れた特性を示す事が分った。
【０１１０】
更に、中心部の抵抗発熱体ゾーンの外形Ｄ１は抵抗発熱体の外接円Ｄの２５〜４５％である試料Ｎｏ．２〜９のウェハ支持部材で、ウェハの温度差が０．４５℃以下と小さく、且つ応答時間も５０秒以下と小さく優れていることが分った。また、外径Ｄ１はＤの３１〜３７％である試料Ｎｏ．４〜７のウェハ支持部材で、ウェハの温度差が０．３５℃以下と小さく応答時間は４４秒以下と小さく好ましいことが分った。更に、外径Ｄ１はＤの３３〜３５％である試料Ｎｏ．５〜６のウェハ支持部材で、ウェハの温度差が０．２４℃以下と小さく応答時間は３４秒以下と更に小さく好ましいことが分った。
【０１１１】
（実施例 ２）
実施例１と同様に板状セラミックス体を作製した。
【０１１２】
そして、窒化アルミニウム焼結体に研削加工を施し、板厚３ｍｍ、直径３１５ｍｍ〜３４５ｍｍの円盤状をした板状セラミックス体２を複数枚製作し、更に中心から６０ｍｍの同心円上に均等に３箇所貫通孔を形成した。貫通口径は、４ｍｍとした。
【０１１３】
次いで板状セラミックス体２の上に抵抗発熱体５を被着するため、導電材としてＡｕ粉末とＰｄ粉末と、前記同様の組成からなるバインダーを添加したガラスペーストを混練して作製した導電体ペーストをスクリーン印刷法にて所定のパターン形状に印刷したあと、１５０℃に加熱して有機溶剤を乾燥させ、さらに５５０℃で３０分間脱脂処理を施したあと、７００〜９００℃の温度で焼き付けを行うことにより、厚みが５０μｍの抵抗発熱体５を形成した。抵抗発熱体５のパターン配置は、中心部から放射状に円と円環状に分割し、中心部に円形の１つにパターンを形成し、その外側の円環状の部分に２つにパターンを形成し、更に最外周に４つのパターンの計７個のパターン構成とした。そして、最外周の４つのパターンの外接円Ｃの直径を３１０ｍｍとして、板状セラミックスの直径を変えて作製した。しかるのち抵抗発熱体５に給電部６をロウ付けし固着させることにより、板状セラミックス体２を製作した。
【０１１４】
また、有底の金属ケースの底面の厚みは２．０ｍｍのアルミニウムと、側壁部を構成する厚み１．０ｍｍのアルミニウムとからなり、底面に、ガス噴射口、熱電対、導通端子を所定の位置に取り付けた。また、底面から板状セラミックス体までの距離は２０ｍｍとした。
【０１１５】
その後、前記有底の金属ケースの開口部に、板状セラミックス体を重ね、その外周部にボルトを貫通させ、板状セラミックス体と有底の金属ケースが直接当たらないように、リング状の接触部材を介在させ、接触部材側より弾性体を介在させてナットを螺着することにより弾性的に固定することによりウェハ支持部材とした。
【０１１６】
また、板状セラミックス体の周辺部下面を支持する支持構造（１）と、板状セラミックス体の外周面を支持する支持構造（２）との２つの構造でウェハ支持部材を作製した。尚、支持構造（１）では、板状セラミックス体の直径と金属ケースの外形である直径を同じとした。
【０１１７】
尚、接触部材１７の断面は円形状で、リング状とした。円形状の断面の大きさは、直径１ｍｍとした。また、接触部材の材質はＳＵＳ３０４、炭素鋼を用いた。作製した各種のウェハ支持部材を試料Ｎｏ.３１〜４１とした。
【０１１８】
作製したウェハ支持部材の評価は、測温抵抗体が２９箇所に埋設された直径３００ｍｍの測温用ウェハを用いて行った。夫々のウェハ支持部材に電源を取り付け２５℃から２００℃まで５分間でウェハＷを昇温し、ウェハＷの温度を２００℃に設定してからウェハＷの平均温度が２００℃±０．５℃の範囲で一定となるまでの時間を応答時間として測定した。また、３０℃から２００℃に５分で昇温し５分間保持した後、３０分間冷却する温度サイクルを１０００サイクル繰り返した後、室温から２００℃に設定し１０分後のウェハ温度の最大値と最小値の差をウェハＷの温度差として測定した。
【０１１９】
それぞれの結果は表２に示す通りである。
【０１２０】
【表２】
Figure 0003981300
【０１２１】
表２の試料Ｎｏ．３１は、板状セラミックス体の直径に対する抵抗発熱体の外接円の比率が８５％と小さくウェハの面内温度差は０．４９℃と大きく、特に応答時間が５８秒とやや大きかった。
【０１２２】
試料Ｎｏ.４１は板状セラミックス体の直径に対する抵抗発熱体の外接円の比率が９９．５％と大きくウェハの面内温度差は１．０５℃と大きく、応答時間も６５秒と大きく好ましくなかった。
【０１２３】
これらに対し、試料Ｎｏ.３２〜４０はウェハの面内の温度差が０．２４℃以下と小さく、しかも応答時間も３４秒以下と小さく優れていることから、板状セラミックス体の直径に対する抵抗発熱体の外接円の比率は、９０〜９９％が優れたウェハ支持部材であることが分る。
【０１２４】
更に、板状セラミックス体の外周部下面で金属ケースと接触部材を介して接続した支持構造（１）では、試料Ｎｏ．３３〜３５に示すように板状セラミックス体の直径に対する抵抗発熱体の外接円の比率が９２〜９５％で、ウェハの面内温度差が０．２０℃以下で且つ応答時間が３２秒以下と優れている。試料Ｎｏ．３４，３５は面内温度差が０．１８℃以下で応答時間も３１秒以下と小さいことから、板状セラミックス体の直径に対する抵抗発熱体の外接円の比率が９３〜９５％であることがさらに好ましいことが分る。
【０１２５】
一方、板状セラミックス体の外周部側面で金属ケースと接触部材を介して接続した支持構造（２）では、試料Ｎｏ．３６〜３９に示すように板状セラミックス体の直径に対する抵抗発熱体の外接円の比率が９５％〜９８％で、ウェハの面内温度差が０．２２℃以下で且つ応答時間は２８秒以下と優れていた。試料Ｎｏ．３７，３８の面内温度差はどちらも０．２０℃で応答時間が２５秒と小さいことから、板状セラミックス体の直径に対する抵抗発熱体の外接円の比率が９６％〜９７％であることがさらに好ましいことが分る。
【０１２６】
（実施例 ３）
実施例１と同様の工程で板状セラミックス体を作製した。そして、板状セラミックス体の主面に実施例１と同様の工程で抵抗発熱体を印刷した。抵抗発熱体のパターンは実施例１と同様の構成として、抵抗発熱体として最外周の４つのパターンに接する外接円の一部に円弧状パターンのない空白域Ｐの間隔Ｓと、前記抵抗発熱体に接する外接円の直径を３１０ｍｍとして板状セラミックス体の直径を変えたウェハ支持部材を作製した。
【０１２７】
また、板状セラミックス体に上記接触部材を介してアルミニウム製の有底の金属ケースを取り付けウェハ支持部材を作製した。
【０１２８】
そして、実施例１と同様に評価した。
【０１２９】
その結果を表３に示す。
【０１３０】
【表３】
Figure 0003981300
【０１３１】
板状セラミックス体の直径と抵抗発熱体の外接円の直径との差Ｌが、空白域の間隔Ｓより大きい試料Ｎｏ.５１、５５、５７は、ウェハの温度差はそれぞれ０．４５、０．４４、０．４４℃で応答時間は３６、３４、３２秒とやや大きかった。
【０１３２】
これらに対し、試料Ｎｏ.５２、５３，５４、５６、５８の空白域の間隔Ｓは差Ｌより小さく、ウェハの温度差は０．２℃以下で、しかも応答時間は２６秒以下と優れた特性を示すことが判明した。
【０１３３】
（実施例 ４）
実施例１と同様に板状セラミックス体を作製した。
【０１３４】
ただし、ペーストの印刷厚みは２０μｍとし、また、抵抗発熱体を囲む外接円に対し、抵抗発熱体の占める面積の比率を異ならせたものを用意した。
【０１３５】
そして、実施例１と同様に評価した。
【０１３６】
その結果を表４に示す。
【０１３７】
【表４】
Figure 0003981300
【０１３８】
この結果、試料Ｎｏ．６０のように、抵抗発熱体を囲む外接円に対し、抵抗発熱体の占める面積の比率が５％を下回る試料は、ウェハの面内の温度差が０．３７℃とやや大きかった。また、試料Ｎｏ．６９のように、抵抗発熱体を囲む外接円に対し、抵抗発熱体の占める面積の比率が５０％を越えると、ウェハの一部に温度の高いホットエリアが現れ、ウェハの面内温度差が０．３９℃と大きかった。
【０１３９】
これに対し、試料Ｎｏ．６１〜６８に示すように、抵抗発熱体の外接円に対して、抵抗発熱体の占める面積の比率を５〜５０％とした試料は、ウェハの面内温度差が０．２５℃以下と小さくすることができ、優れていた。
【０１４０】
また、試料Ｎｏ．６２〜６６のように、抵抗発熱体の外接円に対して、抵抗発熱体の占める面積の比率を１０〜３０％とすることで、ウェハの面内の温度差を０．２０℃以内とすることができ、さらには試料Ｎｏ．６３〜６５のように、抵抗発熱体の外接円に対して、抵抗発熱体の占める面積の比率を１５〜２５％とすることでウェハの面内の温度差を０．１４℃以内にまで低減することができ、特に優れていた。
【０１４１】
【発明の効果】
以上のように、本発明によれば、板状セラミックス体の一方の主面に複数の抵抗発熱体ゾーンを備え、他方の主面にウェハを載せる載置面を備えたウェハ支持部材であって、それぞれの前記抵抗発熱体ゾーンに対応して抵抗発熱体を備えるとともに、該抵抗発熱体に独立して電力を供給する給電部と、該給電部を囲む金属ケースとからなり、中心部に円形の抵抗発熱体ゾーンと、その外側に同心円の２つの円環内に抵抗発熱体ゾーンからなり、前記円形の抵抗発熱体ゾーンの外径Ｄ１は、最外周の抵抗発熱体ゾーンの外径Ｄの２５〜４５％であり、前記最外周の前記抵抗発熱体ゾーンの内径Ｄ２は前記最外周の前記抵抗発熱体ゾーンの外径Ｄの６０〜８５％であるとともに、前記２つの円環状の抵抗発熱体ゾーンのうち、内側の抵抗発熱体ゾーンは、円環を２等分した２個の扇状であり、外側の抵抗発熱体ゾーンは、円環を円周方向に４等分した４個の扇状であり、前記抵抗発熱体ゾーンの外接円の直径が前記板状セラミックス体の直径の９０〜９９％とすることでウェハ面内の温度差が小さく温度応答特性の優れたウェハ保持部材が得られる。
【図面の簡単な説明】
【図１】本発明のウェハ加熱装置の一例を示す断面図である。
【図２】（ａ）（ｂ）は本発明の抵抗発熱体ゾーンの形状を示す概略図である。
【図３】本発明の抵抗発熱体の形状を示す概略図である。
【図４】本発明の他の抵抗発熱体の形状を示す概略図である。
【図５】本発明の他のウェハ加熱装置の一例を示す断面図である。
【図６】従来のウェハ加熱装置の一例を示す断面図である。
【図７】従来の抵抗発熱体の形状を示す概略図である。
【図８】従来の他の抵抗発熱体の形状を示す概略図である。
【図９】従来の他の抵抗発熱体の形状を示す概略図である。
【図１０】従来の他の抵抗発熱体の形状を示す概略図である。
【符号の説明】
１、７１：ウェハ支持部材
２、７２：板状セラミックス体
３、７３：載置面
５、７５：抵抗発熱体
６：給電部
８：支持ピン
１１、７７：給電端子
１２：ガイド部材
１６：ボルト
１７：接触部材
１８：弾性体
１９、７９：金属ケース
２０：ナット
２１：底面
２３：孔
２４：ガス噴射口
２５：ウェハリフトピン
２６：貫通孔
２７：熱電対
２８：従来のガイド部材
Ｗ：半導体ウェハ[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a wafer heating apparatus mainly used for heating a wafer. For example, a thin film is formed on a wafer such as a semiconductor wafer, a liquid crystal device or a circuit board, or a resist solution applied on the wafer. The present invention relates to a wafer support member suitable for forming a resist film by dry baking.
[0002]
[Prior art]
A wafer support member for heating a semiconductor wafer (hereinafter abbreviated as a wafer) is used in a semiconductor thin film forming process, an etching process, a resist film baking process, and the like in a manufacturing process of a semiconductor manufacturing apparatus.
[0003]
The conventional semiconductor manufacturing apparatus has a batch type that heats a plurality of wafers at once and a sheet type that heats one wafer at a time. The single wafer type has excellent temperature controllability, so wiring of semiconductor elements is possible. Wafer support members have been widely used in accordance with demands for miniaturization of wafers and improved accuracy of wafer heat treatment temperature.
[0004]
As such a wafer support member, for example, JP 2001-203156 A, JP 2001-313249 A, and JP 2002-76102 A propose a wafer support member as shown in FIG. 6.
[0005]
The wafer support member 71 includes a plate-shaped ceramic body 72 and a metal case 79 as main components, and nitride ceramics or carbide is formed in an opening of a bottomed metal case 79 made of a metal such as aluminum. A plate-shaped ceramic body 72 made of ceramics is fixed with a bolt 80 via a heat insulating connecting member 74 made of a resin, and the upper surface thereof is used as a mounting surface 73 on which the wafer W is placed, and the lower surface of the plate-shaped ceramic body 72 is placed on the lower surface. For example, a concentric resistance heating element 75 as shown in FIG. 10 is provided.
[0006]
Furthermore, a power supply terminal 77 is brazed to the terminal portion of the resistance heating element 75, and the power supply terminal 77 is inserted into a lead wire drawing hole 76 formed in the bottom 79 a of the metal case 79. 78 to be electrically connected.
[0007]
By the way, in such a wafer support member 71, it is important to make the temperature distribution of the wafer uniform in order to form a homogeneous film on the entire surface of the wafer W and to make the heating reaction state of the resist film uniform. It is. Therefore, until now, in order to reduce the temperature difference in the surface of the wafer, the resistance heating element 75 is divided and the temperature is controlled independently.
[0008]
Japanese Patent Application Laid-Open No. 11-121385 discloses a wafer support member provided with a plurality of resistance heating element blocks that are easy to control the temperature. As shown in FIG. 7, this resistance heating element forms a block radially divided into four from the center. Further, as shown in FIG. 8, a wafer support member is disclosed in which the resistance heating element at the outer peripheral portion is divided into four blocks and the resistance heating element at the central portion is divided into circular blocks.
[0009]
Japanese Patent Laid-Open No. 11-354538, as shown in FIG. 9, is composed of eight resistance heating elements having the same rectangular planar shape and controlled independently of each other or in combination. Among them, the four resistance heating elements are respectively opposed to arcs obtained by dividing the peripheral edge of the wafer into four equal parts in the circumferential direction, and the rectangular long side passes through the center of the arc with respect to the radial direction of the wafer. The other four resistance heating elements are any two of the four resistance heating elements that occupy positions 180 degrees apart from each other in the circumferential direction. In the middle of the above, there is disclosed a wafer support member arranged in parallel to them.
[0010]
However, both have the problem that a very complicated and delicate structure and control are required, and a wafer support member that can heat the temperature distribution more uniformly with a simple structure has been demanded.
[0011]
[Problems to be solved by the invention]
In recent years, the size of wafers has been increased to improve production efficiency, but the semiconductor elements themselves have also diversified. Manufacturing with large-sized wafers does not necessarily lead to improvement in production efficiency. Therefore, an apparatus that can cope with the wafer size and heat treatment conditions is desired.
[0012]
Furthermore, in the chemically amplified resist that has begun to be used with the miniaturization of the wiring of the semiconductor element, not only the uniformity of the temperature of the wafer but also from the moment when the wafer is placed on the heat treatment apparatus until the heat treatment is finished. The transient temperature history is also extremely important, and it is desired that the wafer temperature be stabilized uniformly within about 60 seconds immediately after the wafer is placed.
[0013]
However, in the apparatus introduced in Japanese Patent Application Laid-Open No. 2002-76102 and Japanese Patent Application Laid-Open No. 11-354528, the semiconductor wafer is placed inside the surface region corresponding to the region where the resistance heating element of the plate-like ceramic body is formed. Although a wafer support member is shown in which there is a region to be mounted directly or at a certain distance from the surface, the temperature difference within the wafer surface is as large as 0.5 to 1 ° C. There is a concern that the response time until the temperature becomes stable is greatly affected by the low temperature region on the outer periphery and the response time becomes long.
[0014]
Further, in the wafer support member described in JP-A-11-121385, there is a possibility that the temperature difference between the peripheral portion and the central portion of the wafer W cannot be adjusted in the resistance heating element zone shown in FIG. In the resistance heating element zone shown in FIG. 2, there is a possibility that the temperature of the intermediate portion cannot be adjusted even if the temperature difference between the outer peripheral portion and the central portion can be adjusted.
[0015]
Further, all of them are metal heaters, and there is a possibility that the time for heating the wafer W uniformly, or for rapidly raising or lowering the temperature of the wafer W may be increased.
[0016]
[Means for Solving the Problems]
As a result of intensive studies on the above problems, the present inventors have provided a wafer support having a plurality of resistance heating element zones on one main surface of a plate-like ceramic body and a mounting surface on which the wafer is placed on the other main surface. A resistance heating element corresponding to each of the resistance heating element zones, a power supply section that supplies power independently to the resistance heating element, and a metal case that surrounds the power supply section the resistance heating element zone is a circular resistance heating element zone having a center, Ri outside of the resistance heating element zones of the two annular concentric Tona, an outer diameter of said circular resistance heating element zone D1 Is 25 to 45% of the outer diameter D of the outermost resistance heating element zone, and the inner diameter D2 of the outermost resistance heating element zone is 60 to 60% of the outer diameter D of the outermost resistance heating element zone. 85% and the two circles Of the resistance heating element zones, the inner resistance heating element zone is in the form of two fans that divide the ring into two equal parts, and the outer resistance heating element zone divides the ring into four equal parts in the circumferential direction. a four fan-shaped, the diameter of the circumscribed circle of the resistance heating element zone and wherein 90 to 99% der Rukoto diameter of the plate-like ceramic body.
[0019]
The diameter of the circumscribed circle of the resistance heating element zone and 9 2-9 5% of the diameter of the plate-like ceramic body.
[0020]
Furthermore, before Ki抵 antipyretic body zone, an arcuate pattern in contact with the said circumscribed circle, and a connecting pattern continuously linked to the circular arc pattern, the arcuate present in a portion of the circumscribed circle The space between the blank areas without the pattern is made smaller than the difference between the plate-like ceramic body and the diameter of the circumscribed circle.
[0021]
In particular, the ratio of the area of the resistance heating element in the circumscribed circle to the area of the circumscribed circle surrounding the resistance heating element zone is set to 10 to 30 %.
[0022]
DETAILED DESCRIPTION OF THE INVENTION
Embodiments of the present invention will be described below.
[0023]
FIG. 1 is a cross-sectional view showing an example of a wafer support member 1 according to the present invention. One main surface of a plate-like ceramic body 2 made of ceramics mainly composed of silicon carbide or aluminum nitride is mounted on a wafer W. In addition to the mounting surface 3, a resistance heating element 5 is formed on the other main surface, and a power feeding unit 6 electrically connected to the resistance heating element 5 is provided. A power feeding terminal 11 is connected to the power feeding unit 6. . A metal case 19 surrounding these power feeding portions 6 is fixed to the peripheral portion of the other main surface of the plate-like ceramic body 2 via a connecting member 17.
[0024]
Further, the wafer lift pins 25 can move the wafer W up and down through the holes penetrating the plate-like ceramic body 2 to place or drop the wafer W on the mounting surface 3. Then, the power supply terminal 11 is connected to the power supply unit 6 and electric power is supplied from the outside, and the temperature W of the plate ceramic body 2 can be heated by the temperature measuring element 27 to heat the wafer W.
[0025]
The wafer W is held in a state of being lifted from the mounting surface 3 by the wafer support pins 8 so as to prevent temperature variations due to contact of the wafer W or the like. In addition, when the resistance heating element 5 is divided into a plurality of zones, the temperature of each zone is controlled independently to supply power to the power supply terminals 11 of each power supply unit 6, and the temperature of each temperature measuring element 27 is changed. The electric power applied to the power supply terminal 11 is adjusted so as to be each set value so that the surface temperature of the wafer W placed on the placement surface 3 is uniform.
[0026]
The resistance heating element 5 is formed with a power feeding portion 6 made of a material such as gold, silver, palladium, platinum or the like, and the power feeding terminal 11 is brought into contact with the power feeding portion 6 to ensure conduction. As long as the power supply terminal 11 and the power supply unit 6 are a method that can ensure conduction, a method such as soldering or brazing may be used.
[0027]
The resistance heating element zone 4 is concentrically divided into two resistance heating element zones 4 corresponding to the mounting surface 3 of the wafer W in order to uniformly heat the surface of the disk-shaped wafer W or the atmosphere around the wafer W or the wafer W Although it is affected by the wall surface and gas flow that opposes the surface of the wafer W, the surrounding surface of the wafer W and the surface of the upper surface of the wafer W and the flow of atmospheric gas are This is because it is designed to be centrosymmetric. In order to uniformly heat the wafer W, the wafer support member 1 that matches the above-mentioned environment that is symmetric with respect to the wafer W is required. Further, the mounting surface 3 is divided into the center of symmetry to form the resistance heating element zone 4. preferable.
[0028]
FIG. 2A shows a wafer support member 1 according to the present invention, which has a plurality of resistance heating element zones 4 on one main surface of a plate-like ceramic body, a circular resistance heating element zone 4a at the center, and an outer side thereof. The example of arrangement | positioning of each resistance heating element zone 4 provided with resistance heating element zone 4bc and resistance heating element zone 4dg in two concentric rings is shown.
[0029]
The outer shape D1 of the resistance heating element zone 4a at the center of the wafer supporting member 1 of the present invention is 25 to 45% of the outer diameter D of the outer resistance heating element zone 4dg. The inner diameter D2 is preferably 60 to 85% of the outer shape D of the resistance heating element zone on the outer peripheral portion, which can reduce the in-plane temperature difference of the wafer W.
[0030]
Incidentally, the outer diameter D of the resistance heating element zone 4dg on the outer peripheral portion surrounds the resistance heating element 5dg constituting the resistance heating element zone 4dg when viewed in a projection plane parallel to the other main surface of the plate-like ceramic body 2. The diameter of the circumscribed circle. Similarly, the inner diameter D2 of the resistance heating element zone 4dg on the outer periphery is the diameter of a circle inscribed in the resistance heating element 5dg constituting the resistance heating element zone 4dg.
[0031]
If the outer diameter D1 is less than 25% of D, the outer shape of the resistance heating element zone 4a at the center is too small. Therefore, even if the heating value of the resistance heating element zone 4a is increased, the temperature at the center of the resistance heating element zone 4a remains. This is because there is a risk that the temperature in the center portion will be lowered without rising. If the outer diameter D1 exceeds 45%, the outer shape of the resistance heating element zone 4a at the center is too large, so that the amount of heat generated in the resistance heating element zone 4a cannot be made sufficiently small. This is because the temperature may become too high when the peripheral portion heats the resistance heating element zone 4bc. Preferably, the outer shape D1 is 31 to 37% of D, and more preferably, the outer shape D1 is 33 to 35% of D, whereby the in-plane temperature difference of the wafer W can be further reduced.
[0032]
Further, when the inner diameter D2 is less than 60% of the outer diameter D, the peripheral portion of the wafer support member 1 is easily cooled. Therefore, when the amount of heat generated in the resistance heating element zone 4dg is increased in order to prevent a decrease in the temperature around the wafer W. In addition, the temperature inside the resistance heating element zone 4dg close to the center of the wafer W is increased, and the in-plane temperature difference of the wafer W may be increased. If the inner diameter D2 exceeds 85% of the outer diameter D, the temperature of the resistance heating element zone 4dg increases even if the heating value of the resistance heating element zone 4dg is increased to prevent the temperature around the wafer W from being lowered. The influence of the temperature decrease around the wafer W reaches the resistance heating element zone 4bc, and the temperature outside the resistance heating element zone 4bc may be lowered. Preferably, when the inner diameter D2 is 68% to 78% of the outer diameter D, and more preferably 70 to 75%, the in-plane temperature difference of the wafer W can be further reduced.
[0033]
Further, it was found that the in-plane temperature difference of the wafer W can be further reduced by correcting the slight left / right asymmetry caused by the environment around the wafer support member 1 and the thickness variation of the symmetric heating element.
[0034]
FIG. 2 (b) shows a circular resistance heating element zone 4a at the center of the wafer support member 1 of the present invention and two fan-shaped resistance heating element zones 4b and 4c obtained by dividing the annular ring 4bc into two equal parts. Further, the wafer support member 1 is composed of four fan-shaped resistance heating element zones 4d, 4e, 4f, and 4g obtained by equally dividing the ring into four in the circumferential direction at positions facing each other in the outer ring 4dg. This is preferable because the surface temperature of the wafer W becomes more uniform.
[0035]
Each of the resistance heating element zones 4a to 4g of the wafer support member 1 can generate heat independently, and includes resistance heating elements 5a to 5g corresponding to the resistance heating element zones 4a to 4g.
[0036]
The annular resistance heating element zones 4bc and 4dg are divided into two and four in the radial direction, respectively, but this is not restrictive.
[0037]
Although the boundary line of the resistance heating element zones 4b and 4c in FIG. 2B is a straight line, it is not necessarily a straight line and may be a wavy line. It is preferable that the resistance heating element zones 4 b and 4 c are centrosymmetric with respect to the center of the plate-like ceramic body 2.
[0038]
Similarly, the boundary lines of the resistance heating element zones 4d and 4e, 4e and 4f, 4f and 4g, 4g and 4d do not necessarily have to be straight lines, and each resistance heating element 4d to 4g has a plate shape. The center of the ceramic body 2 is preferably symmetric with respect to the center.
[0039]
Each of the resistance heating elements 5 is preferably manufactured by a printing method or the like, and is formed to have a width of 1 to 5 mm and a thickness of 5 to 50 μm. When the printing surface to be printed at a time becomes large, there is a possibility that the printing thickness may not be constant due to the difference in pressure between the squeegee and the screen on the left and right or front and back of the printing surface. In particular, when the size of the resistance heating element 5 is increased, the thickness of the resistance heating element 5 on the left and right sides is different and the designed heat generation may vary. The amount of heat generation varies, and the in-plane temperature difference between the wafer W increases, which is not preferable. In order to prevent the temperature variation caused by the variation in thickness of the resistance heating element, it has been found that it is effective to divide the individual resistance heating elements 5 having a large outer diameter, which is composed of one resistance heating element.
[0040]
Accordingly, the concentric annular resistance heating element zone excluding the central portion of the wafer W mounting surface 3 is divided into two parts on the left and right sides, and the larger annular resistance heating element zone is divided into four parts so that the resistance in the resistance heating element zone 4 is divided. since it is possible to reduce the size of printing a heating element 5, the thickness of each part of the resistance heating element 5 can be made uniform, yet the surface of the corrected wafer W subtle temperature difference before and after the left and right wafer W The temperature can be made uniform.
[0041]
The resistance heating elements 5b, 5c, 5d, 5e, 5f, and 5g shown in FIG. 3 each have a folded pattern, and the resistance heating elements 5b, 5c, 5d, 5e, 5f, and 5g shown in FIG. Each is spiral. Moreover, the pattern which compounded these patterns may be sufficient.
[0042]
Further, the wafer support member 1 of the present invention is a wafer support member 1 provided with a resistance heating element 5 on one main surface of a plate-like ceramic body 2, and the outer periphery of the plate-like ceramic body 2 as shown in FIG. The resistance heating elements 5d, 5e, 5d, and 5f that are located in the section are formed of a concentric arc-shaped pattern 51 and a connection pattern 52 that is continuously connected to the center of the plate-like ceramic body 2 at a position far from the center. Is preferred. The resistance heating element 5 includes a power supply unit 6 that supplies power to the resistance heating element 5 and a metal case 19 that surrounds the power supply unit 6, and includes a wafer heating surface on the other main surface of the plate-like ceramic body 2. 5 is preferably 90 to 99% of the diameter DP of the plate-like ceramic body 2.
[0043]
If the diameter D of the circumscribed circle C of the resistance heating element 5 is smaller than 90% of the diameter DP of the plate-like ceramic body 2, the time for rapidly increasing or decreasing the temperature of the wafer increases, and the temperature response characteristics of the wafer W are increased. Inferior. In order to uniformly heat the surface temperature of the wafer W so as not to lower the temperature at the periphery of the wafer W, the diameter D is preferably about 1.02 times the diameter of the wafer W. On the other hand, the diameter DP of the plate-shaped ceramic body 2 is increased, and the size of the wafer W that can be uniformly heated is smaller than the diameter DP of the plate-shaped ceramic body 2. The heating efficiency for heating the is deteriorated. Furthermore, since the plate-like ceramic body 2 becomes large, the installation area of the wafer manufacturing apparatus becomes large, which is not preferable because the operating rate with respect to the installation area of the semiconductor manufacturing apparatus that needs to perform the maximum production with the minimum installation area is lowered.
[0044]
When the diameter D of the circumscribed circle C of the resistance heating element 5 is larger than 99% of the diameter DP of the plate-like ceramic body 2, the distance between the contact member 17 and the outer periphery of the resistance heating element 5 is small, and heat is generated from the outer periphery of the resistance heating element 5. Flows non-uniformly to the contact member 17, and in particular, heat flows from a portion where the arc-shaped pattern 51 in contact with the circumscribed circle C of the outer peripheral portion does not exist, and the arc-shaped pattern 51 of the outer peripheral portion is the central portion of the plate-like ceramic body 2. Since it bends, the temperature of the portion P where the arc-shaped pattern 51 is missing along the circumscribed circle C surrounding the resistance heating element 5 may be lowered, and the in-plane temperature difference of the wafer W may be increased. More preferably, the diameter D of the circumscribed circle C of the resistance heating element 5 is 92 to 97% of the diameter DP of the plate-like ceramic body 2.
[0045]
In addition, as shown in FIG. 1, when the plate-shaped ceramic body 2 and the metal case 19 have substantially the same outer shape and the metal case 19 supports the plate-shaped ceramic body 2 from below, the temperature difference in the surface of the wafer W is reduced. The diameter D of the circumscribed circle C of the resistance heating element 5 is 92 to 95%, more preferably 93 to 95% of the diameter DP of the plate-like ceramic body 2.
[0046]
On the other hand, when the metal case is connected so as to cover the outer peripheral surface of the plate-like ceramic body 2 as shown in FIG. 5, the diameter D of the circumscribed circle C of the resistance heating element 5 is equal to the diameter DP of the plate-like ceramic body 2. 95-98% is preferable, More preferably, it is 96-97%.
[0047]
Furthermore, the wafer support member 1 of the present invention includes, for example, an arc-shaped pattern 51 in contact with the circumscribed circle C of the resistance heating element 5 of FIG. 3 and a connection pattern 52 continuously connected to the arc-shaped pattern 51, The interval S between the blank areas P having no arc-shaped pattern in a part of the circumscribed circle C is based on the difference between the diameter D of the plate-like ceramic body and the diameter DC of the circumscribed circle C (hereinafter abbreviated as L). Small is preferable. If the distance S is larger than L, the heat of the blank area P flows to the peripheral part of the plate-shaped ceramic body, and the temperature of the blank area P may be lowered. However, if the interval S is smaller than L, the temperature of the blank area P is unlikely to decrease, and the temperature in the peripheral portion of the wafer W placed on the mounting surface 3 of the plate-like ceramic body 2 does not decrease, but the temperature within the wafer W surface. This is preferable because the difference is reduced.
[0048]
In order not to lower the temperature of the blank area P, it is necessary to increase the temperature of the blank area. If the resistance of the connection pattern 52 for heating the blank area is equal or increased to increase the heat generation amount, The possibility that the temperature is lowered is reduced, and the in-plane temperature of the wafer W is preferably uniform. When the resistance heating element 5 created by a printing method or the like is planar, the resistance of the connection pattern 52 can be increased by making the line width Ws of the connection pattern 52 smaller than the line width Wp of the arc-shaped pattern 51. By increasing the temperature of the pattern 52 above the temperature of the arc-shaped pattern 51, the in-plane temperature of the wafer W can be made uniform.
[0049]
One main surface side of a plate-like ceramic body 2 having a plate thickness of 1 to 7 mm is used as a mounting surface 3 on which a wafer is placed, and a wafer support member provided with a resistance heating element 5 on the lower surface of the plate-like ceramic body 2 1, the thickness of the resistance heating element 5 is 5 to 50 μm, and the ratio of the area of the resistance heating element 5 in the circumscribed circle C to the area of the circumscribed circle C surrounding the resistance heating element 5 is 5 to 50. % Is preferred.
[0050]
That is, if the ratio of the area of the resistance heating element 5 in the circumscribed circle C to the area of the circumscribed circle C surrounding the resistance heating element 5 is less than 5%, Since the facing interval S1 of the region becomes too large, the surface temperature of the mounting surface 3 corresponding to the interval S1 without the resistance heating element 5 becomes smaller than other portions, and the temperature of the mounting surface 3 is made uniform. Conversely, if the ratio of the area of the resistance heating element 5 in the circumscribed circle C to the area of the circumscribed circle C surrounding the resistance heating element 5 exceeds 50%, the plate-like ceramic body 2 Even if the difference in thermal expansion between the heating element 5 and the resistance heating element 5 is approximated to 3.0 × 10 −6 / ° C. or less, the thermal stress acting between the two is too large. Although it is made of a ceramic sintered body that is difficult to deform, its thickness t is from 1 mm to When the resistance heating element 5 is heated because it is as thin as 7 mm, the plate-like ceramic body 2 is warped so that the mounting surface 3 side is concave, and as a result, the temperature of the central portion of the wafer W is higher than that of the peripheral edge. It is because there exists a possibility that it may become small and temperature variation may become large.
[0051]
Preferably, the ratio of the area of the resistance heating element 5 in the circumscribed circle C to the area of the circumscribed circle C surrounding the resistance heating element 5 is 10% to 30%, more preferably 15% to 25%. Is preferred.
[0052]
More specifically, the resistance heating element 5 has a counter area that opposes the outer peripheral portion, and the interval S1 between the counter areas is 0.5 mm or more, and is not more than three times the plate thickness of the plate-like ceramic body 2. Preferably there is. If the interval S1 between the opposing regions is 0.5 mm or less, when the resistance heating element 5 is printed and formed, whisker-like protrusions may occur in the opposing region of the resistance heating element 5 and the portion may be short-circuited. Further, when the interval S1 between the opposing regions exceeds three times the thickness of the plate-like ceramic body 2, a cool zone is generated on the surface of the wafer W corresponding to the opposing region S1, and the in-plane temperature difference of the wafer W may be increased. Because there is.
[0053]
Furthermore, in order to efficiently exhibit such an effect, the thickness of the resistance heating element 5 is preferably set to 5 to 50 μm.
[0054]
This is because if the thickness of the resistance heating element 5 is less than 5 μm, it becomes difficult to uniformly print the resistance heating element 5 by screen printing, and the thickness of the resistance heating element 5 exceeds 50 μm. Even if the ratio of the area occupied by the resistance heating element 5 to the circumscribed circle P1 is 50% or less, the thickness of the resistance heating element 5 is increased, the rigidity of the resistance heating element 5 is increased, and the temperature change of the plate-like ceramic body 5 Therefore, the plate-like ceramic body 2 may be deformed due to the influence of the expansion and contraction of the resistance heating element 5. Further, it is difficult to print with a uniform thickness by screen printing, and the temperature difference on the surface of the wafer W may increase. A preferable thickness of the resistance heating element 5 is 10 to 30 μm.
[0055]
A more detailed configuration will be described.
[0056]
FIG. 1 is a cross-sectional view showing an example of a wafer support member according to the present invention, and shows one main surface of a plate-like ceramic body 2 having a plate thickness t of 1 to 7 mm and a Young's modulus of 100 to 200 ° C. of 200 to 450 MPa. In addition to the mounting surface 3 on which the wafer W is placed, a resistance heating element 5 is formed on the other main surface, and a power feeding unit 6 electrically connected to the resistance heating element 5 is provided.
[0057]
As the material of the plate-like ceramic body 2 having a Young's modulus of 100 to 200 ° C. of 200 to 450 MPa, alumina, silicon nitride, sialon, and aluminum nitride can be used. Of these, aluminum nitride is particularly 50 W / (m · K). ) above, together with further has a 100W / (m · K) or more high thermal conductivity, since it is excellent in corrosion resistance and耐Pu La Zuma against fluorine-based or corrosive gases chlorine etc., a plate-like ceramic It is suitable as a material for the body 2.
[0058]
The thickness of the plate-like ceramic body 2 is more preferably 2 to 5 mm. When the thickness of the plate-like ceramic body 2 is less than 2 mm, the strength of the plate-like ceramic body 2 is lost, and when the cooling heat from the gas injection port 24 is blown when heating by the heat generation of the resistance heating body 5, This is because the plate-shaped ceramic body 2 may not be able to withstand stress and may crack. On the other hand, if the thickness of the plate-like ceramic body 2 exceeds 5 mm, the heat capacity of the plate-like ceramic body 2 increases, so that there is a possibility that the time until the temperature at the time of heating and cooling becomes stable becomes longer.
[0059]
The plate-shaped ceramic body 2 has a ring-shaped contact member 17 so that the bolt 16 passes through the outer periphery of the opening of the bottomed metal case 19 so that the plate-shaped ceramic body 2 and the bottomed metal case 19 do not directly contact each other. And the nut 20 is screwed together with the elastic body 18 interposed from the bottomed metal case 19 side to be elastically fixed. Thereby, even if the bottomed metal case 19 is deformed when the temperature of the plate-like ceramic body 2 fluctuates, the elastic body 18 absorbs this, thereby suppressing the warp of the plate-like ceramic body 2, It is possible to prevent temperature variations due to warpage of the plate-shaped ceramic body 2 from occurring on the wafer surface.
[0060]
The cross-section of the ring-shaped contact member 17 may be either polygonal or circular. However, when the plate-shaped ceramic body 2 and the contact member 17 are in contact with each other in a plane, the contact portion of the plate-shaped ceramic body 2 and the contact member 17 is in contact. If the width is 0.1 mm to 13 mm, the amount of heat of the plate-like ceramic body 2 flowing through the contact member 17 to the bottomed metal case 19 can be reduced. And the temperature difference in the surface of the wafer W is small, and the wafer W can be heated uniformly. More preferably, it is 0.1-8 mm. If the width of the contact portion of the contact member 17 is 0.1 mm or less, the contact portion may be deformed when the contact is fixed to the plate-like ceramic body 2, and the contact member may be damaged. Further, when the width of the contact portion of the contact member 17 exceeds 13 mm, the heat of the plate-like ceramic body 2 flows to the contact member, the temperature of the peripheral portion of the plate-like ceramic body 2 is lowered, and the wafer W is heated uniformly. It becomes difficult to do. Preferably, the width of the contact portion between the contact member 17 and the plate-like ceramic body 2 is 0.1 mm to 8 mm, more preferably 0.1 to 2 mm.
[0061]
Further, the thermal conductivity of the contact member 17 is preferably smaller than the thermal conductivity of the plate-like ceramic body 2. If the thermal conductivity of the contact member 17 is smaller than the thermal conductivity of the plate-like ceramic body 2, the temperature distribution in the wafer W surface placed on the plate-like ceramic body 2 can be heated uniformly, and the plate-like ceramic body 2. When the temperature is raised or lowered, the amount of heat transferred to the contact member 17 is small, and there is little thermal interference with the bottomed metal case 19, so that it is easy to change the temperature quickly.
[0062]
In the wafer support member 1 in which the thermal conductivity of the contact member 17 is smaller than 10% of the thermal conductivity of the plate-like ceramic body 2, it is difficult for the heat of the plate-like ceramic body 2 to flow into the bottomed metal case 19. The heat from 2 to the bottomed metal case 19 flows due to heat transfer by atmospheric gas (air in this case) or radiation heat transfer, and the effect is small.
[0063]
When the thermal conductivity of the contact member 17 is higher than the thermal conductivity of the plate-like ceramic body 2, the heat around the plate-like ceramic body 2 flows to the bottomed metal case 19 via the contact member 17 and is present. While heating the bottom metal case 19, the temperature of the peripheral part of the plate-shaped ceramic body 2 falls, and the temperature difference in the wafer W surface becomes large, which is not preferable. In addition, since the bottomed metal case 19 is heated, even if it is attempted to cool the plate-like ceramic body 2 by injecting air from the gas injection port 24, the cooling time is large because the temperature of the bottomed metal case 19 is high. Or when it is heated to a certain temperature, there is a possibility that the time until the temperature reaches a certain temperature is increased.
[0064]
On the other hand, as a material constituting the contact member 17, the Young's modulus of the contact member is preferably 1 GPa or more, and more preferably 10 GPa or more in order to hold a small contact portion. By setting such a Young's modulus, the width of the contact portion is as small as 0.1 mm to 8 mm, and the plate-like ceramic body 2 is fixed to the bottomed metal case 19 with the bolt 16 via the contact member 17, The contact member 17 is not deformed, and the plate-shaped ceramic body 2 can be held with high accuracy without being displaced or changing in parallelism.
In addition, the precision which cannot be obtained with the contact member which consists of resin which added fluororesin and glass fiber like Unexamined-Japanese-Patent No. 2001-313249 can be achieved.
[0065]
As the material of the contact member 17, metals such as carbon steel made of iron and carbon and special steel added with nickel, manganese, and chromium are preferable because of their large Young's modulus. Further, as the material having a low thermal conductivity, so-called kovar of stainless steel or Fe—Ni—Co alloy is preferable, and the material of the contact member 17 is selected so as to be smaller than the thermal conductivity of the plate-like ceramic body 2. Is preferred.
[0066]
Furthermore, since the contact portion between the contact member 17 and the plate-like ceramic body 2 is small, and even if the contact portion is small, the contact portion is not liable to be lost and particles can be generated. The cross section of the contact member 17 cut at a plane perpendicular to the body 2 is preferably circular rather than polygonal. When a circular wire having a cross section diameter of 1 mm or less is used as the contact member 17, the plate-like ceramic body 2 and the bottomed metal case 19 are used. It is possible to raise and lower the temperature of the wafer W evenly and quickly without changing the position of the wafer W.
[0067]
Next, the bottomed metal case 19 has a side wall portion 22 and a bottom surface 21, and the plate-like ceramic body 2 is installed so as to cover the opening of the bottomed metal case 19. Further, the bottomed metal case 19 is provided with a hole 23 for discharging a cooling gas, and a power supply terminal for conducting to a power supply portion 6 for supplying power to the resistance heating element 5 of the plate-like ceramic body 2. 11. A gas injection port 24 for cooling the plate-like ceramic body 2 and a thermocouple 27 for measuring the temperature of the plate-like ceramic body 2 are provided.
[0068]
The depth of the bottomed metal case 19 is 10 to 50 mm, and the bottom surface 21 is preferably installed at a distance of 10 to 50 mm from the plate-like ceramic body 2. More preferably, it is 20-30 mm. This is because heat equalization of the mounting surface 3 is facilitated by radiant heat between the plate-like ceramic body 2 and the bottomed metal case 19, and at the same time, there is a heat insulation effect from the outside, so the temperature of the mounting surface 3 is constant. This is because the time until the temperature becomes uniform is shortened.
[0069]
Then, work such as placing the wafer W on the placement surface 3 or lifting it from the placement surface 3 is performed by lift pins 25 installed in the bottomed metal case 19 so as to be movable up and down. The wafer W is held in a state of being lifted from the mounting surface 3 by the wafer support pins 8 so as to prevent temperature variation due to contact with each other.
[0070]
Further, in order to heat the wafer W by the wafer heating apparatus 1, the lift pin 25 is lowered after the wafer W carried to the upper side of the mounting surface 3 by the transfer arm (not shown) is supported by the lift pin 25. The wafer W is then placed on the placement surface 3.
[0071]
Next, when the wafer support member 1 is used for forming a resist film, if the main component of the plate-like ceramic body 2 is silicon carbide, it does not react with moisture in the atmosphere and does not generate gas. Even when the resist film is applied to the wafer W, fine wirings can be formed at a high density without adversely affecting the structure of the resist film. At this time, it is necessary that the sintering aid does not contain nitrides that may react with water to form ammonia or amines.
[0072]
In the silicon carbide sintered body forming the plate-like ceramic body 2, boron (B) and carbon (C) are added as sintering aids to the main component silicon carbide, or alumina (Al 2 It can be obtained by adding a metal oxide such as O 3 ) yttria (Y 2 O 3 ), mixing it well, processing it into a flat plate, and firing it at 1900-2100 ° C. Silicon carbide may be either mainly α-type or β-type.
[0073]
On the other hand, when the silicon carbide sintered body is used as the plate-like ceramic body 2, glass or resin is used as an insulating layer for maintaining insulation between the plate-like ceramic body 2 having semiconductivity and the resistance heating element 5. When glass is used, if the thickness is less than 100 μm, the withstand voltage is less than 1.5 kV and the insulation cannot be maintained. Conversely, if the thickness exceeds 400 μm, the plate-like ceramic body 2 is formed. Since the thermal expansion difference between the silicon carbide sintered body and the aluminum nitride sintered body becomes too large, cracks are generated and the insulating layer does not function. Therefore, when glass is used as the insulating layer, the thickness of the insulating layer 4 is preferably formed in the range of 100 to 400 μm, and desirably in the range of 200 μm to 350 μm.
[0074]
Furthermore, the main surface opposite to the mounting surface 3 of the plate-shaped ceramic body 2 has a flatness of 20 μm or less and a surface roughness of the center line average roughness from the viewpoint of improving the adhesion with the insulating layer 4 made of glass or resin. The thickness (Ra) is preferably polished to 0.1 μm to 0.5 μm.
[0075]
Further, when the plate-like ceramic body 2 is formed of a sintered body mainly composed of aluminum nitride, a rare earth element such as Y 2 O 3 or Yb 2 O 3 is used as a sintering aid for the main component aluminum nitride. It is obtained by adding an elemental oxide and, if necessary, an alkaline earth metal oxide such as CaO and mixing them well, processing them into a flat plate, and then firing them in nitrogen gas at 1900-2100 ° C. In order to improve the adhesion of the resistance heating element 5 to the plate-like ceramic body 2, an insulating layer made of glass may be formed. However, when sufficient glass is added in the resistance heating element 5 and sufficient adhesion strength can be obtained by this, it can be omitted.
[0076]
The glass forming this insulating layer may be crystalline or amorphous, and has a heat-resistant temperature of 200 ° C. or higher and a thermal expansion coefficient in the temperature range of 0 ° C. to 200 ° C. It is preferable to select and use a material in the range of −5 to + 5 × 10 −7 / ° C. with respect to the thermal expansion coefficient of the ceramics to be formed. That is, if a glass whose thermal expansion coefficient is out of the above range is used, the difference in thermal expansion from the ceramic forming the plate-like ceramic body 2 becomes too large, so that defects such as cracks and delamination occur during cooling after baking the glass. It is because it is easy to occur.
[0077]
In addition, as a means for depositing an insulating layer made of glass on the plate-like ceramic body 2, an appropriate amount of the glass paste is dropped on the center of the plate-like ceramic body 2, and is spread and applied uniformly by a spin coating method. Alternatively, the glass paste may be baked at a temperature of 600 ° C. or higher after being uniformly applied by a screen printing method, a dipping method, a spray coating method, or the like. When glass is used as the insulating layer, the surface of the plate-like ceramic body 2 made of a silicon carbide sintered body or an aluminum nitride sintered body is heated to a temperature of about 850 to 1300 ° C. to deposit the insulating layer. By subjecting to an oxidation treatment, adhesion to an insulating layer made of glass can be enhanced.
[0078]
As a pattern shape of the resistance heating element 5 of the present invention, a folded pattern as shown in FIG. 2 or a plurality of blocks as shown in FIG. 3 and FIG. Since the wafer support member 1 of the present invention is important to uniformly heat the wafer W, these pattern shapes have a strip-like resistance heat generation. It is preferable that the density of each part of the body 5 is uniform. However, in the resistance heating element pattern in which a portion where the resistance heating elements 25 are closely spaced and a rough portion appear alternately in the radial direction from the center of the plate-like ceramic body 22 as shown in FIG. The surface temperature of the wafer W corresponding to is small, the temperature of the wafer W corresponding to the dense portion is large, and the entire surface of the wafer W cannot be heated uniformly, which is not preferable.
[0079]
Further, when the resistance heating element 5 is divided into a plurality of blocks, it is preferable to uniformly heat the wafer W on the mounting surface 3 by independently controlling the temperature of each block.
[0080]
The resistance heating element 5 is obtained by printing and baking an electrode paste containing glass frit or metal oxide on conductive metal particles on the plate-like ceramic body 2 by a printing method. As the metal particles, Au, Ag, Cu, It is preferable to use at least one metal of Pd, Pt, and Rh, and the glass frit is made of an oxide containing B, Si, and Zn, and is 4.5 × 10 4 smaller than the thermal expansion coefficient of the plate-like ceramic body 2. It is preferable to use a low expansion glass of −6 / ° C. or lower, and it is preferable to use at least one selected from silicon oxide, boron oxide, alumina, and titania as the metal oxide.
[0081]
Here, the reason why at least one kind of metal of Au, Ag, Cu, Pd, Pt, Rh is used as the metal particles forming the resistance heating element 5 is that the electric resistance is small.
[0082]
The glass frit forming the resistance heating element 5 is made of an oxide containing B, Si, and Zn, and the thermal expansion coefficient of the metal particles constituting the resistance heating element 5 is larger than the thermal expansion coefficient of the plate-like ceramic body 2. In order to make the thermal expansion coefficient of the resistance heating element 5 close to the thermal expansion coefficient of the plate-like ceramic body 2, a low expansion glass of 4.5 × 10 −6 / ° C. or less which is smaller than the thermal expansion coefficient of the plate-like ceramic body 2 is used. It is because it is preferable to use.
[0083]
In addition, as the metal oxide forming the resistance heating element 5, using at least one selected from silicon oxide, boron oxide, alumina, and titania has excellent adhesion to the metal particles in the resistance heating element 5, In addition, the thermal expansion coefficient is close to the thermal expansion coefficient of the plate-like ceramic body 2 and the adhesiveness with the plate-like ceramic body 2 is also excellent.
[0084]
However, if the content of the metal oxide exceeds 80% with respect to the resistance heating element 5, the adhesion with the plate-like ceramic body 2 is increased, but the resistance value of the resistance heating element 5 is not preferable. Therefore, the content of the metal oxide is preferably 60% or less.
[0085]
As the resistance heating element 5 made of conductive metal particles and glass frit or metal oxide, one having a thermal expansion difference with the plate-like ceramic body 2 of 3.0 × 10 −6 / ° C. or less is used. preferable.
[0086]
That is, it is difficult to make the difference in thermal expansion between the resistance heating element 5 and the plate-like ceramic body 2 to be 0.1 × 10 −6 / ° C. On the contrary, the heat between the resistance heating element 5 and the plate-like ceramic body 2 is difficult. When the difference in expansion exceeds 3.0 × 10 −6 / ° C., when the resistance heating element 5 is heated, the mounting surface 3 side warps in a concave shape due to thermal stress acting between the plate-like ceramic body 2. This is because there is a fear .
[0087]
Further, as the resistance heating element 5 material deposited on the insulating layer, a simple metal such as gold (Au), silver (Ag), copper (Cu), palladium (Pd) or the like is directly applied by a vapor deposition method or a plating method. Either a metal paste or a conductive metal oxide such as rhenium oxide (Re 2 O 3 ) or lanthanum manganate (LaMnO 3 ) or a paste in which the above metal material is dispersed in a resin paste or glass paste. The conductive material may be prepared, printed by a screen printing method or the like in a predetermined pattern shape, and baked, and the conductive material may be bonded with a matrix made of resin or glass. When glass is used as the matrix, either crystallized glass or amorphous glass may be used, but crystallized glass is preferably used in order to suppress a change in resistance value due to thermal cycling.
[0088]
However, if the resistance heating element 5 material using silver (Ag) or copper (Cu), since there is a possibility that migration occurs in such a case, the resistance heating element 5 the same as the insulating layer so as to cover What is necessary is just to coat | coat the coating layer which consists of material with the thickness of about 40-400 micrometers.
[0089]
Further, regarding a method of feeding power to the resistance heating element 5, the power feeding terminal 11 installed on the bottomed metal case 19 is pressed against the power feeding portion 6 formed on the surface of the plate-like ceramic body 2 by a spring (not shown). Secure the connection and supply power. This is because if the terminal portion made of metal is embedded in the plate-like ceramic body 2 having a thickness of 2 to 5 mm, the thermal uniformity is deteriorated due to the heat capacity of the terminal portion. Therefore, as in the present invention, the thermal stress due to the temperature difference between the plate-shaped ceramic body 2 and the bottomed metal case 19 is reduced by pressing the power supply terminal 11 with a spring to ensure electrical connection. The electrical conduction can be maintained with high reliability. Further, an elastic conductor may be inserted as an intermediate layer in order to prevent the contact from becoming a point contact. This intermediate layer is effective by simply inserting a foil-like sheet. And it is preferable that the diameter by the side of the electric power feeding part 6 of the electric power feeding terminal 11 shall be 1.5-5 mm.
[0090]
Further, the temperature of the plate-like ceramic body 2 is measured by a thermocouple 27 whose tip is embedded in the plate-like ceramic body 2. As the thermocouple 27, it is preferable to use a sheath-type thermocouple 27 having an outer diameter of 0.8 mm or less from the viewpoint of responsiveness and workability of holding. In order to improve the reliability of temperature measurement, it is preferable that the tip of the thermocouple 27 has a hole formed in the plate-shaped ceramic body 2 and is fixed to the inner wall surface of the hole by a fixing member installed therein. . Similarly, it is also possible to perform temperature measurement by embedding a temperature measuring resistor such as a thermocouple of a wire or Pt.
[0091]
As shown in FIG. 5, a plurality of support pins 8 are provided on one main surface of the plate-like ceramic body 2, and the wafer W is placed at a certain distance from one main surface of the plate-like ceramic body 2. You may make it hold | maintain.
[0092]
Although FIG. 1 shows the wafer support member 1 having only the resistance heating element 5 on the other main surface 3 of the plate-like ceramic body 2, the present invention is arranged between the main surface 3 and the resistance heating element 5. Needless to say, an electrode for electrostatic adsorption or plasma generation may be embedded.
[0093]
【Example】
(Example 1)
First, 1.0% by mass of yttrium oxide in terms of weight was added to the aluminum nitride powder, and further kneaded for 48 hours with a ball mill using isopropyl alcohol and urethane balls to produce an aluminum nitride slurry.
[0094]
Next, the aluminum nitride slurry was passed through 200 mesh to remove urethane balls and ball mill wall debris, and then dried at 120 ° C. for 24 hours in an explosion-proof dryer.
[0095]
Next, the obtained aluminum nitride powder was mixed with an acrylic binder and a solvent to produce an aluminum nitride slip, and a plurality of aluminum nitride green sheets were produced by a doctor blade method.
[0096]
A laminate was formed by laminating a plurality of obtained aluminum nitride green sheets.
[0097]
Thereafter, the laminate is degreased at a temperature of 500 ° C. for 5 hours in a non-oxidizing gas stream, and then fired at a temperature of 1900 ° C. for 5 hours in a non-oxidizing atmosphere to obtain various thermal conductivities. A plate-like ceramic body having the same was produced.
[0098]
Then, the aluminum nitride sintered body is ground to produce a plurality of disk-shaped ceramic bodies 2 having a disk thickness of 3 mm and a diameter of 315 mm to 330 mm, and further penetrates three places evenly on a concentric circle of 60 mm from the center. A hole was formed. The through-hole diameter was 4 mm.
[0099]
Next, in order to deposit the resistance heating element 5 on the plate-like ceramic body 2, a conductor paste produced by kneading a glass paste to which Au powder, Pd powder and a binder having the same composition as described above are added as a conductive material. Is printed in a predetermined pattern shape by a screen printing method, heated to 150 ° C. to dry the organic solvent, further degreased at 550 ° C. for 30 minutes, and then baked at a temperature of 700 to 900 ° C. Thus, the resistance heating element 5 having a thickness of 50 μm was formed.
[0100]
The resistance heating element zone 4 is arranged in such a manner that a resistance heating element zone is formed in a circular shape having a diameter of D1 mm at the center, and an outer ring is divided into two equal resistance heating element zones, and further on the outer side. A total of seven resistance heating element zones were formed by dividing an annular ring with an inner diameter of D2 mm into four resistance heating element zones. And the sample which changed the ratio of D1 and D2 by making the diameter of circumscribed circle C of four resistance heating element zones of the outermost circumference into 310 mm was produced. After that, the plate-like ceramic body 2 was manufactured by brazing and fixing the feeding portion 6 to the resistance heating element 5.
[0101]
For comparison, a resistance heating element zone having the configuration shown in FIG. 9 is used, the size of the rectangular heating element zone is 212 × 53 mm, and sample No. 8 using eight rectangular heating element zones is used. 21 was produced. Similarly, sample no. Reference numeral 22 denotes a resistance heating element zone configured as shown in FIG. 8, wherein D1r is 150 mm and D2r is 310 mm. Sample No. Reference numeral 23 denotes the shape of the resistance heating element zone having the configuration shown in FIG.
[0102]
The bottom of the bottomed metal case is made of 2.0mm of aluminum and 1.0mm of aluminum constituting the side wall, and the gas injection port, thermocouple, and conduction terminal are attached to the bottom of the case. It was. The distance from the bottom surface to the plate-like ceramic body was 20 mm.
[0103]
After that, a plate-shaped ceramic body is overlaid on the opening of the bottomed metal case, and a bolt is passed through the outer periphery thereof, so that the plate-shaped ceramic body and the bottomed metal case do not directly contact each other. A wafer support member was obtained by interposing a member and elastically fixing the member by screwing a nut through an elastic body from the contact member side.
[0104]
In addition, a wafer support member was fabricated with two structures, a support structure ( 1 ) that supports the lower surface of the peripheral portion of the plate-like ceramic body and a support structure ( 2 ) that supports the outer peripheral surface of the plate-like ceramic body. In the support structure ( 1 ) , the diameter of the plate-like ceramic body is the same as the diameter of the metal case.
[0105]
The contact member 17 has a circular cross section and a ring shape. The size of the circular cross section was 1 mm in diameter. The material of the contact member was SUS304 or carbon steel. The produced various wafer support members were designated as sample Nos. 1-24.
[0106]
Evaluation of the produced wafer support member was performed using a temperature measuring wafer having a diameter of 300 mm in which temperature measuring resistors were embedded in 29 locations. A power supply is attached to each wafer support member, the wafer W is heated from 25 ° C. to 200 ° C. in 5 minutes, the temperature of the wafer W is set to 200 ° C., and then the average temperature of the wafer W is 200 ° C. ± 0.5 ° C. The time until it became constant in the range of was measured as the response time. Further, after the temperature cycle of 30 ° C. to 200 ° C. in 5 minutes and holding for 5 minutes and then cooling for 30 minutes is repeated 1000 cycles, the temperature is set from room temperature to 200 ° C. and the maximum value of the wafer temperature after 10 minutes The difference between the minimum values was measured as the temperature difference of the wafer W.
[0107]
Each result is as shown in Table 1.
[0108]
[Table 1]
Figure 0003981300
[0109]
In the wafer support member 1 of the present invention, a sample No. 1 having a circular resistance heating element zone in the center and resistance heating element zones in two concentric rings on the outer side thereof. The wafer support members 1 to 1 have a temperature difference of 0. The response time was excellent at less than 61 ° C. and less than 60 seconds. Further, the outer shape D1 of the resistance heating element zone at the center is 25 to 45% of the outer diameter D of the outermost resistance heating element zone, and the inner diameter D2 of the outermost resistance heating element zone is the outermost resistance heating element zone. The wafer support member 1 which is 60 to 85% of the outer shape D of the zone is the sample No. 2 to 9 and 12 to 19, and the temperature difference of the wafer W was as small as 0.44 ° C. or less, and the response time was as small as 49 seconds or less, indicating excellent characteristics.
[0110]
Further, the outer shape D1 of the resistance heating element zone at the center is 25 to 45% of the circumscribed circle D of the resistance heating element. It was found that the wafer support members of 2 to 9 were excellent, with the wafer temperature difference as small as 0.45 ° C. or less and the response time as small as 50 seconds or less. The outer diameter D1 is 31 to 37% of D. It was found that the wafer support members of 4 to 7 were preferable because the temperature difference of the wafer was as small as 0.35 ° C. or less and the response time was as small as 44 seconds or less. Furthermore, the outer diameter D1 is 33 to 35% of D. It has been found that the wafer temperature difference between the wafer support members of 5 to 6 is as small as 0.24 ° C. or less, and the response time is as small as 34 seconds or less.
[0111]
(Example 2)
A plate-like ceramic body was produced in the same manner as in Example 1.
[0112]
Then, the aluminum nitride sintered body is ground to produce a plurality of disk-shaped plate-like ceramic bodies 2 having a plate thickness of 3 mm and a diameter of 315 mm to 345 mm, and further penetrates three places evenly on a concentric circle of 60 mm from the center. A hole was formed. The through-hole diameter was 4 mm.
[0113]
Next, in order to deposit the resistance heating element 5 on the plate-like ceramic body 2, a conductor paste produced by kneading a glass paste to which Au powder, Pd powder and a binder having the same composition as described above are added as a conductive material. Is printed in a predetermined pattern shape by a screen printing method, heated to 150 ° C. to dry the organic solvent, further degreased at 550 ° C. for 30 minutes, and then baked at a temperature of 700 to 900 ° C. Thus, the resistance heating element 5 having a thickness of 50 μm was formed. The pattern of the resistance heating element 5 is divided into a circle and an annular shape radially from the central portion, a pattern is formed in one circular shape in the central portion, and a pattern is formed in two in the outer annular portion. Furthermore, a total of 7 patterns of 4 patterns on the outermost periphery were formed. Then, the diameter of the circumscribed circle C of the outermost four patterns was set to 310 mm, and the diameter of the plate ceramic was changed. After that, the plate-like ceramic body 2 was manufactured by brazing and fixing the feeding portion 6 to the resistance heating element 5.
[0114]
Further, the bottom of the bottomed metal case is made of 2.0 mm aluminum and 1.0 mm thick aluminum constituting the side wall, and the gas injection port, the thermocouple, and the conduction terminal are arranged at predetermined positions on the bottom. Attached to. The distance from the bottom surface to the plate-like ceramic body was 20 mm.
[0115]
After that, a plate-shaped ceramic body is overlaid on the opening of the bottomed metal case, and a bolt is passed through the outer periphery thereof, so that the plate-shaped ceramic body and the bottomed metal case do not directly contact each other. A wafer support member was obtained by interposing a member and elastically fixing the member by screwing a nut through an elastic body from the contact member side.
[0116]
In addition, a wafer support member was fabricated with two structures, a support structure ( 1 ) that supports the lower surface of the peripheral portion of the plate-like ceramic body and a support structure ( 2 ) that supports the outer peripheral surface of the plate-like ceramic body. In the support structure ( 1 ) , the diameter of the plate-like ceramic body is the same as the diameter of the metal case.
[0117]
The contact member 17 has a circular cross section and a ring shape. The size of the circular cross section was 1 mm in diameter. The material of the contact member was SUS304 or carbon steel. The produced various wafer support members were designated as sample Nos. 31-41.
[0118]
Evaluation of the produced wafer support member was performed using a temperature measuring wafer having a diameter of 300 mm in which temperature measuring resistors were embedded in 29 locations. A power supply is attached to each wafer support member, the wafer W is heated from 25 ° C. to 200 ° C. in 5 minutes, the temperature of the wafer W is set to 200 ° C., and then the average temperature of the wafer W is 200 ° C. ± 0.5 ° C. The time until it became constant in the range of was measured as the response time. Further, after the temperature cycle of 30 ° C. to 200 ° C. in 5 minutes and holding for 5 minutes and then cooling for 30 minutes is repeated 1000 cycles, the temperature is set from room temperature to 200 ° C. and the maximum value of the wafer temperature after 10 minutes The difference between the minimum values was measured as the temperature difference of the wafer W.
[0119]
Each result is as shown in Table 2.
[0120]
[Table 2]
Figure 0003981300
[0121]
Sample No. in Table 2 In No. 31, the ratio of the circumscribed circle of the resistance heating element to the diameter of the plate-like ceramic body was as small as 85%, the in-plane temperature difference of the wafer was as large as 0.49 ° C., and the response time was particularly large at 58 seconds.
[0122]
In sample No. 41, the ratio of the circumscribed circle of the resistance heating element to the diameter of the plate-like ceramic body was 99.5%, the in-plane temperature difference of the wafer was as large as 1.05 ° C., and the response time was also large as 65 seconds, which is not preferable. It was.
[0123]
On the other hand, sample Nos. 32 to 40 are excellent because the temperature difference in the plane of the wafer is as small as 0.24 ° C. or less and the response time is as small as 34 seconds or less. It can be seen that 90 to 99% of the circumscribed circle ratio of the heating element is an excellent wafer support member.
[0124]
Furthermore, in the support structure ( 1 ) connected to the lower surface of the outer peripheral portion of the plate-like ceramic body via the metal case, the sample No. 3 3-3 in a ratio of the circumscribed circle of the resistance heating element to the diameter of the plate-shaped ceramic body as shown in 5 is 92-95%, and the response time is 32 seconds in the in-plane temperature difference of the wafer 0.20 ° C. or less Excellent with: Sample No. 34 and 35 have an in-plane temperature difference of 0.18 ° C. or less and a response time of 31 seconds or less, so that the ratio of the circumscribed circle of the resistance heating element to the diameter of the plate-like ceramic body is 93 to 95%. It can be seen that more preferable.
[0125]
On the other hand, in the support structure ( 2 ) connected to the metal case and the contact member on the outer peripheral side surface of the plate-shaped ceramic body, As shown in 36 to 39, the ratio of the circumscribed circle of the resistance heating element to the diameter of the plate-like ceramic body is 95% to 98%, the in-plane temperature difference of the wafer is 0.22 ° C. or less, and the response time is 28 seconds or less. And was excellent. Sample No. The in-plane temperature difference between 37 and 38 is both 0.20 ° C. and the response time is as small as 25 seconds. Therefore, the ratio of the circumscribed circle of the resistance heating element to the diameter of the plate-like ceramic body is 96% to 97%. Is more preferable.
[0126]
(Example 3)
A plate-like ceramic body was produced in the same process as in Example 1. Then, a resistance heating element was printed on the main surface of the plate-like ceramic body in the same process as in Example 1. The pattern of the resistance heating element has the same configuration as that of the first embodiment. The resistance heating element has a space S between the blank areas P having no arc-shaped pattern in a part of a circumscribed circle in contact with the four outermost patterns as the resistance heating element. A wafer support member was produced in which the diameter of the circumscribed circle in contact with the substrate was 310 mm and the diameter of the plate-like ceramic body was changed.
[0127]
In addition, a bottomed metal case made of aluminum was attached to the plate-like ceramic body via the contact member to produce a wafer support member.
[0128]
And it evaluated similarly to Example 1. FIG.
[0129]
The results are shown in Table 3.
[0130]
[Table 3]
Figure 0003981300
[0131]
Sample Nos. 51, 55, and 57, in which the difference L between the diameter of the plate-shaped ceramic body and the diameter of the circumscribed circle of the resistance heating element is larger than the space S between the blank areas, have a wafer temperature difference of 0.45,. At 44 and 0.44 ° C., the response time was slightly large at 36, 34 and 32 seconds.
[0132]
In contrast, the blank space interval S of sample Nos. 52, 53, 54, 56, and 58 was smaller than the difference L, the wafer temperature difference was 0.2 ° C. or less, and the response time was 26 seconds or less. It was found to exhibit characteristics.
[0133]
(Example 4)
A plate-like ceramic body was produced in the same manner as in Example 1.
[0134]
However, the paste was printed at a thickness of 20 μm, and the ratio of the area occupied by the resistance heating element to the circumscribed circle surrounding the resistance heating element was prepared.
[0135]
And it evaluated similarly to Example 1. FIG.
[0136]
The results are shown in Table 4.
[0137]
[Table 4]
Figure 0003981300
[0138]
As a result, sample no. As 60, to the circumscribed circle surrounding the resistance heating element, a sample the ratio of the area occupied by the resistance heating element is below 5%, the temperature difference in the plane of the window E wafer was slightly large as 0.37 ° C.. Sample No. 69 as in, to the circumscribed circle surrounding the resistance heating element, the ratio of the area occupied by the resistance heating element exceeds 50%, some high Hottoeri A temperature appears in the window E Ha, the plane of the U E c The internal temperature difference was as large as 0.39 ° C.
[0139]
In contrast, sample no. As shown in 61 to 68, relative to the circumscribed circle of the resistance heating element, and samples 5 to 50 percent ratio of the area occupied by the resistance heating element, in-plane temperature difference of U E Ha 0.25 ° C. or less And could be smaller and was better.
[0140]
Sample No. As in the 62 to 66, relative to the circumscribed circle of the resistance heating element, the ratio of the area occupied by the resistance heating element by 10 to 30% within 0.20 ° C. The temperature difference in the plane of the U E c Furthermore, sample No. As 63 to 65, relative to the circumscribed circle of the resistance heating element, the ratio of the area occupied by the resistive heating element the temperature difference in the plane of the U E c by 15 to 25% within 0.14 ° C. It was particularly excellent.
[0141]
【The invention's effect】
As described above, according to the present invention, there is provided a wafer support member including a plurality of resistance heating element zones on one main surface of a plate-shaped ceramic body and a mounting surface on which a wafer is placed on the other main surface. A resistance heating element corresponding to each of the resistance heating element zones, a power supply section that supplies power independently to the resistance heating element, and a metal case that surrounds the power supply section. Resistance heating element zone and a resistance heating element zone in two concentric rings on the outer side, and the outer diameter D1 of the circular resistance heating element zone is equal to the outer diameter D of the outermost resistance heating element zone. 25 to 45%, the inner diameter D2 of the outermost resistance heating element zone is 60 to 85% of the outer diameter D of the outermost resistance heating element zone, and the two annular resistance heating elements The resistance heating element inside the body zone The outer resistance heating element zone has four fan shapes obtained by dividing the annular ring into four equal parts in the circumferential direction, and circumscribes the resistance heating element zone. By setting the diameter of the circle to 90 to 99% of the diameter of the plate-shaped ceramic body, a wafer holding member having a small temperature difference in the wafer surface and excellent temperature response characteristics can be obtained.
[Brief description of the drawings]
FIG. 1 is a cross-sectional view showing an example of a wafer heating apparatus of the present invention.
2A and 2B are schematic views showing the shape of a resistance heating element zone of the present invention.
FIG. 3 is a schematic view showing the shape of a resistance heating element of the present invention.
FIG. 4 is a schematic view showing the shape of another resistance heating element of the present invention.
FIG. 5 is a cross-sectional view showing an example of another wafer heating apparatus of the present invention.
FIG. 6 is a cross-sectional view showing an example of a conventional wafer heating apparatus.
FIG. 7 is a schematic view showing the shape of a conventional resistance heating element.
FIG. 8 is a schematic view showing the shape of another conventional resistance heating element.
FIG. 9 is a schematic view showing the shape of another conventional resistance heating element.
FIG. 10 is a schematic view showing the shape of another conventional resistance heating element.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1, 71: Wafer support member 2, 72: Plate-shaped ceramic body 3, 73: Mounting surface 5, 75: Resistance heating element 6: Power supply part 8: Support pin 11, 77: Power supply terminal 12: Guide member 16: Bolt 17: Contact member 18: Elastic body 19, 79: Metal case 20: Nut 21: Bottom 23: Hole 24: Gas injection port 25: Wafer lift pin 26: Through hole 27: Thermocouple 28: Conventional guide member W: Semiconductor wafer

Claims (4)

板状セラミックス体の一方の主面に複数の抵抗発熱体ゾーンを備え、他方の主面にウェハを載せる載置面を備えたウェハ支持部材であって、それぞれの前記抵抗発熱体ゾーンに対応して抵抗発熱体を備えるとともに、該抵抗発熱体に独立して電力を供給する給電部と、該給電部を囲む金属ケースとを有し、前記抵抗発熱体ゾーンは、中心部に備えた円形の抵抗発熱体ゾーンと、その外側の同心円の２つの円環状の抵抗発熱体ゾーンからなり、前記円形の抵抗発熱体ゾーンの外径Ｄ１は、最外周の抵抗発熱体ゾーンの外径Ｄの２５〜４５％であり、前記最外周の前記抵抗発熱体ゾーンの内径Ｄ２は前記最外周の前記抵抗発熱体ゾーンの外径Ｄの６０〜８５％であるとともに、前記２つの円環状の抵抗発熱体ゾーンのうち、内側の抵抗発熱体ゾーンは、円環を２等分した２個の扇状であり、外側の抵抗発熱体ゾーンは、円環を円周方向に４等分した４個の扇状であり、前記抵抗発熱体ゾーンの外接円の直径が前記板状セラミックス体の直径の９０〜９９％であることを特徴とするウェハ支持部材。A wafer supporting member having a plurality of resistance heating element zones on one main surface of a plate-shaped ceramic body and a mounting surface on which the wafer is placed on the other main surface, corresponding to each of the resistance heating element zones. A resistance heating element, a power supply section that supplies power independently to the resistance heating element, and a metal case that surrounds the power supply section, and the resistance heating element zone has a circular shape provided at the center. a resistance heating element zone, Ri the outer two annular resistive heating element zone concentric Tona, the circular resistance heating body outer diameter D1 of the zone, the outer diameter D of the outermost resistive heating element zone 25 The inner diameter D2 of the outermost resistance heating element zone is 60 to 85% of the outer diameter D of the outermost resistance heating element zone, and the two annular resistance heating elements Inside the zone, the resistance heating element zone inside Are two fan-shaped parts that divide the ring into two equal parts, and the outer resistance heating element zone is four fan-shaped parts that divide the ring into four equal parts in the circumferential direction, and circumscribed circle of the resistance heating element zone The wafer support member is characterized by having a diameter of 90 to 99% of the diameter of the plate-like ceramic body . 前記抵抗発熱体ゾーンの外接円の直径が前記板状セラミックス体の直径の９２〜９５％であることを特徴とする請求項１に記載のウェハ支持部材。 2. The wafer support member according to claim 1 , wherein a diameter of a circumscribed circle of the resistance heating element zone is 9 2 to 9 5 % of a diameter of the plate-like ceramic body. 前記抵抗発熱体ゾーンは、その前記外接円に接する円弧状パターンと、該円弧状パターンに連続して繋がった連結パターンとを備え、前記外接円の一部に存在する前記円弧状のパターンのない空白域の間隔が、前記板状セラミックス体と前記外接円の直径との差より小さいことを特徴とする請求項１に記載のウェハ支持部材。The resistance heating element zone includes an arc-shaped pattern in contact with the circumscribed circle and a connection pattern continuously connected to the arc-shaped pattern, and does not have the arc-shaped pattern existing in a part of the circumscribed circle. interval blank region is, the wafer support member according to claim 1, wherein the smaller than the difference between the diameter of the circumscribed circle and the plate-shaped ceramic body. 前記抵抗発熱体ゾーンを囲む前記外接円の面積に対し、前記外接円内に占める抵抗発熱体の面積の比率が１０〜３０％であることを特徴とする請求項２に記載のウェハ支持部材。 3. The wafer support member according to claim 2 , wherein the ratio of the area of the resistance heating element in the circumscribed circle to the area of the circumscribed circle surrounding the resistance heating element zone is 10 to 30 %. .
JP2002185064A 2002-06-25 2002-06-25 Wafer support member Expired - Fee Related JP3981300B2 (en)

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Publication number Priority date Publication date Assignee Title
JP4693429B2 (en) * 2004-06-28 2011-06-01 京セラ株式会社 Heater, wafer heating heater and wafer heating apparatus using the same
JP4761723B2 (en) * 2004-04-12 2011-08-31 日本碍子株式会社 Substrate heating device
US8071916B2 (en) 2004-06-28 2011-12-06 Kyocera Corporation Wafer heating apparatus and semiconductor manufacturing apparatus
JP2006332410A (en) * 2005-05-27 2006-12-07 Kyocera Corp Device for heating wafer and device for manufacturing semiconductor using it
JP6593413B2 (en) * 2017-10-10 2019-10-23 住友電気工業株式会社 Heater unit for wafer heating
JP6593415B2 (en) * 2017-10-10 2019-10-23 住友電気工業株式会社 Heater unit for wafer heating
KR20190053941A (en) * 2017-10-10 2019-05-20 스미토모덴키고교가부시키가이샤 Heater unit for wafer heating
JP6593414B2 (en) * 2017-10-10 2019-10-23 住友電気工業株式会社 Heater unit for wafer heating

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