JP2006127883A - Heater and wafer heating device - Google Patents

Heater and wafer heating device Download PDF

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Publication number
JP2006127883A
JP2006127883A JP2004313838A JP2004313838A JP2006127883A JP 2006127883 A JP2006127883 A JP 2006127883A JP 2004313838 A JP2004313838 A JP 2004313838A JP 2004313838 A JP2004313838 A JP 2004313838A JP 2006127883 A JP2006127883 A JP 2006127883A
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Prior art keywords
wafer
heating element
resistance heating
zone
body
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JP2004313838A
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Japanese (ja)
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Tsunehiko Nakamura
恒彦 中村
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Kyocera Corp
京セラ株式会社
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Priority to JP2004313838A priority Critical patent/JP2006127883A/en
Priority claimed from TW94133740A external-priority patent/TWI281833B/en
Publication of JP2006127883A publication Critical patent/JP2006127883A/en
Application status is Pending legal-status Critical

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Abstract

<P>PROBLEM TO BE SOLVED: To solve a problem where necessary thermal uniformity and temperature responsiveness can not be provided due to temperature dispersion of a wafer heating device. <P>SOLUTION: According to this application, one-side principal surface of a plate-like body is used as a heating surface for heating a heating object; a strip-like resistance heating element is installed in its inside or on the other principal surface; the strip of the strip-like resistance heating element is arranged in a nearly concentric circular ring-like form by continuing arcuate wire parts and folded-back arcuate wire parts having generally the same width; the distance between a pair of the folded-back arcuate wire parts positioned on the same circumference is set smaller than the distance between circular arc-like patterns adjacent to each other in the radial direction; power feed parts are formed at both ends of the resistance heating element; and the power feed parts are located outside the circular ring. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a heater mainly used for heating a wafer. For example, a thin film is formed on a wafer such as a semiconductor wafer, a liquid crystal device, or a circuit board, or a resist solution applied on the wafer is dried. The present invention relates to a heater and a wafer heating apparatus suitable for forming a resist film by baking.

  2. Description of the Related Art A heater for heating a semiconductor wafer (hereinafter abbreviated as a wafer) is used in a semiconductor thin film forming process, an etching process, a resist film baking process, and the like in a manufacturing process of a semiconductor manufacturing apparatus.

  As such a heater, for example, Patent Document 1, Patent Document 2, and Patent Document 3 propose a wafer heating apparatus as shown in FIG.

  The heater 71 has a plate-like body 72 and a metal case 79 as main components, and is made of nitride ceramics or carbide ceramics in an opening of a bottomed metal case 79 made of metal such as aluminum. The plate-like body 72 is fixed with a bolt 80 through a resin heat-insulating connection member 74, and the upper surface thereof is used as a heating surface 73 on which the wafer W is placed, and the lower surface of the plate-like body 72 is shown, for example, in FIG. Such a concentric resistance heating element 75 is provided.

  Furthermore, a power supply terminal 77 is brazed to the power supply portion of the resistance heating element 75, and the power supply terminal 77 is inserted into a lead wire drawing hole 76 formed in the bottom 79 a of the metal case 79. 78 to be electrically connected.

  By the way, in such a heater 71, it is important to make the temperature distribution of the wafer uniform in order to form a homogeneous film on the entire surface of the wafer W and to make the heating reaction state of the resist film uniform. . Therefore, until now, in order to reduce the temperature difference in the surface of the wafer, the resistance heating element 75 is divided and the temperature is controlled independently.

  Patent Document 4 discloses a heater including a plurality of resistance heating element blocks that are easy to control the temperature. As shown in FIG. 6, this resistance heating element forms a block radially divided into four from the center. Further, as shown in FIG. 7, a heater is disclosed in which the resistance heating element at the outer peripheral portion is divided into four blocks and the resistance heating element at the central portion is divided into circular blocks.

  Further, as shown in FIG. 8, Patent Document 5 is composed of eight resistance heating elements having the same rectangular planar shape and controlled independently of each other or in combination of a plurality of them. The four resistance heating elements are perpendicular to the radial direction of the wafer whose long sides of the rectangle pass through the center of the arc at positions facing the arcs obtained by dividing the peripheral edge of the wafer into four equal parts in the circumferential direction. The other four resistance heating elements are arranged in the middle of any two resistance heating elements that occupy positions 180 degrees apart from each other in the circumferential direction, among the four resistance heating elements. A heater arranged side by side in parallel with them is disclosed.

  Further, in Patent Document 6, a circular plate-shaped body is provided with a plurality of resistance heating elements, the outermost resistance heating element is a sine curve, and the outermost periphery as in Patent Document 7 and Patent Document 11. A heater 500 in which the resistance heating element 50 has a rectangular shape has been disclosed (see FIGS. 10 and 11 and FIG. 12). And these electric power feeding parts 60 were arrange | positioned adjacent to the resistance heating element.

  Further, Patent Document 10 discloses a wafer heating apparatus in which a corner portion of a resistance heating element has an arc shape.

  Patent Document 11 discloses a heater in which the position of the central angle between power feeding parts connected to a spiral resistance heating element is reduced.

However, both have the problem that a very complicated and delicate structure and control are required, and a heater capable of heating the temperature distribution more uniformly with a simple structure has been demanded.
JP 2001-203156 A JP 2001-313249 A JP 2002-76102 A JP-A-11-121385 Japanese Patent Laid-Open No. 11-354528 JP 2001-6852 A JP 2001-223257 A JP 2001-267043 A JP 11-191535 A JP 2002-231793 A JP 2001-257200 A

  In recent years, the size of wafers has been increasing in order to improve production efficiency, but the semiconductor elements themselves have also diversified. Manufacturing with large-sized wafers does not necessarily lead to improvement in production efficiency. Therefore, an apparatus that can cope with the wafer size and heat treatment conditions is desired.

  Furthermore, in the chemically amplified resist that has begun to be used with the miniaturization of the wiring of the semiconductor element, not only the uniformity of the temperature of the wafer but also from the moment when the wafer is placed on the heat treatment apparatus until the heat treatment is finished. The transient temperature history is also extremely important, and it is desired that the wafer temperature be stabilized uniformly within about 60 seconds immediately after the wafer is placed.

  However, in the devices introduced in Patent Document 3 and Patent Document 5, the semiconductor wafer is separated directly or a certain distance from the surface inside the surface region corresponding to the region where the plate-like resistance heating element is formed. However, the temperature difference in the wafer surface is as large as 0.5 to 1 ° C., and the influence of the low temperature region on the outer periphery of the plate-like body is large. There is a possibility that the response time until stabilization is increased.

  Further, in the wafer heating apparatus described in Patent Document 4, there is a possibility that the temperature difference between the peripheral portion and the central portion of the wafer W cannot be adjusted in the zone shown in FIG. 6, and in the zone shown in FIG. Even if the temperature difference in the central part can be adjusted, the temperature in the intermediate part may not be adjusted.

  Furthermore, all of them are metal heaters, and there is a possibility that the time for heating the wafer W uniformly, or for rapidly raising or lowering the temperature of the wafer W may be increased.

  In addition, the wafer heating apparatus described in Patent Document 8 is arranged around the resistance heating element and the plate-like body even when the outermost resistance heating element is heated to compensate for the temperature drop due to the heat radiation of the peripheral part of the plate-like body. Since the balance between right and left and right and left cannot be adjusted, it was extremely difficult to keep the temperature difference in the wafer W plane within 0.5 ° C.

  Further, the resistance heating elements described in Patent Document 6 and Patent Document 7 can increase the heat generation density of the outermost resistance heating element, but the balance between the left and right of the resistance heating element cannot be adjusted inside the resistance heating element. There was a problem that the in-plane temperature difference of W could not be reduced.

  Moreover, in the spiral resistance heating element as in Patent Document 11, there is a problem that the temperature variation due to the arrangement of the power feeding portion is large, and the wafer cannot be heated uniformly.

  Further, as disclosed in Patent Document 7, there is a problem that a wafer cannot be overheated even if a plurality of resistance heating elements are provided and the temperature of each resistance heating element is controlled by a temperature measuring element arranged between the resistance heating elements. was there.

  As a result of intensive studies on the above problems, the inventors of the present invention have one main surface of the plate-like body as a heating surface of an object to be heated, and the inside or the other main surface is connected to the heating surface. A belt-like resistance heating element formed by routing in the opposite annular zones, a temperature measuring element for measuring the temperature of the plate-like body or the object to be heated, and a power feeding unit for heating the resistance heating element are provided. In the heater, the temperature measuring element is arranged in the zone, and the power feeding unit is arranged in a region other than the zone.

  The resistance heating element is routed by a U-shaped pattern of a plurality of arc-shaped wiring portions and folded wiring portions.

  A plurality of the U-shaped patterns are arranged in a concentric ring shape, and the distance between the folded wiring portions of the pair of U-shaped patterns arranged on the same circle is shorter than the distance between the U-shaped patterns adjacent in the radial direction. Features.

  The distance between the folded wiring portions of the pair of U-shaped patterns arranged on the same circle among the plurality of U-shaped patterns is 30% to 80% of the distance between the U-shaped patterns adjacent in the radial direction. Features.

  Each of the U-shaped patterns has an independent power feeding section so that it can be heated independently, and the distance between the U-pattern folded wiring sections adjacent to each other on the same circumference is between the adjacent U-shaped patterns in the radial direction. It is characterized by being smaller than the distance.

  Further, the wafer heating apparatus of the present invention is characterized in that a plurality of zones in the heater are arranged in a concentric ring shape, and a power supply terminal for supplying power to the power supply part of each zone can be contacted.

  The outer diameter D1 of the central zone is 23 to 33% of the outer diameter D of the outermost zone, and the outer diameter D2 of the outer zone D1 of the central zone is 45 to 45 of the outer diameter D. The inner diameter D3 of the outer zone of the outer diameter D1 of the central zone is 63 to 83% of the outer diameter D of the outermost zone.

  A through hole penetrating the plate-like body is provided between the central zone and the outer zone.

  The width of the outermost resistance heating element is smaller than the width of the other zone inside thereof.

  The ratio of the area of the resistance heating element in the circumscribed circle to the area of the outer peripheral circle surrounding the zone is 5 to 30%.

  As described above, according to the present invention, since the temperature measuring element is disposed in the zone and the power feeding unit is disposed outside the zone, heat is not taken away from the terminal electrode connected to the power feeding unit, In addition, since the temperature in the wafer surface can be accurately controlled, a heater and wafer heating apparatus having a small temperature difference in the wafer surface and excellent temperature response characteristics can be obtained.

  Embodiments of the present invention will be described below.

  FIG. 1 is a cross-sectional view showing an example of a heater 1 according to the present invention, in which a semiconductor wafer W, which is an object to be heated, has one main surface of a plate-like body 2 made of ceramics mainly composed of silicon carbide or aluminum nitride. In addition to the heating surface 3 to be mounted, a resistance heating element 5 is formed on the other main surface, and a power feeding part 6 electrically connected to the resistance heating element 5 is provided. A power feeding terminal 11 is connected to the power feeding part 6. Yes. A metal case 19 surrounding these power feeding portions 6 is fixed to a peripheral portion of the other main surface of the plate-like body 2 via a connecting member 17.

  Further, the wafer lift pins 25 can move the wafer W up and down through the holes penetrating the plate-like body 2, so that the wafer W can be placed on or lowered from the heating surface 3. Then, the power supply terminal 11 is connected to the power supply unit 6 and electric power is supplied from the outside, and the wafer W can be heated while the temperature measuring element 27 measures the temperature of the plate-like body 2.

  The wafer W is held in a state of being lifted from the heating surface 3 by the wafer support pins 8 so as to prevent temperature variations due to contact of the wafer W or the like. In addition, when the resistance heating element 5 is divided into a plurality of zones, the temperature of each zone is controlled independently to supply power to the power supply terminals 11 of each power supply unit 6, and the temperature of each temperature measuring element 27 is changed. The electric power applied to the power supply terminal 11 is adjusted so as to have each set value so that the surface temperature of the wafer W placed on the heating surface 3 becomes uniform.

  The resistance heating element 5 is formed with a power feeding portion 6 made of a material such as gold, silver, palladium, platinum or the like, and the power feeding terminal 11 is brought into contact with the power feeding portion 6 to ensure conduction. As long as the power supply terminal 11 and the power supply unit 6 are a method that can ensure conduction, a method such as soldering or brazing may be used.

  A wafer heating apparatus 1 that is a heater of the present invention uses a main surface of a plate-like body 2 as a heating surface 3 for heating an object to be heated, and a strip-like resistance heating element 5 inside or on the other main surface, A plate-shaped body 2 or a temperature measuring element 27 for measuring the temperature of the object to be heated is disposed, and the band-shaped resistance heating element 5 has a substantially same width and an annular shape facing the heating surface 3. It is formed by drawing around the zone. Further, the resistance heating element 5 is routed in the zone by a U-shaped pattern including a plurality of arc-shaped wiring portions and folded wiring portions. Further, the U-shaped pattern is continuously arranged in a substantially concentric ring shape. Further, the power supply unit 6 is provided at both ends of the resistance heating element 5, the power supply unit 6 is located outside the zone, and the temperature measuring element 27 is located inside the zone. The temperature difference at normal time can be reduced, and the temperature difference in the wafer surface can be reduced during the transition.

  FIG. 2 shows the arrangement positions of the resistance heating element 5, the power feeding unit 6, and the temperature measuring element 27. The band of the resistance heating element 5 is composed of arcuate wiring portions 5i, 5j, 5k, 5m, 5n, 5o, 5p and folded wiring portions 5q, 5r, 5s, 5t, 5u, 5v having substantially the same width. It is possible to reduce the temperature difference in the wafer surface at the time of constant or transient. Moreover, it is preferable that the resistance heating element 5 is uniformly disposed in the ring between the circle C1 and the circle C2. By arranging in this way, an object to be heated such as a semiconductor wafer can be heated uniformly. In particular, a circular wafer is formed in a circular shape in accordance with the heater, and is placed in a centrally symmetric processing container for film formation processing, drying processing, and the like. In such a processing apparatus, heat is removed uniformly from the inner wall of the processing vessel, and it is important to heat the wafer uniformly within the wafer surface. When heated centrally with respect to the wafer, the temperature difference in the wafer surface is reduced. be able to. Therefore, the resistance heating element 5 that heats the heating surface 3 corresponding to the wafer with high accuracy in a central symmetry is preferable. From this point, the arcuate wiring portions 5i, 5j, 5k, 5m, 5n, 5o, 5p and the folded wiring portions 5q, If it is composed of 5r, 5s, 5t, 5u, 5v, the wafer can be heated uniformly. Since the power supply section 6 for supplying power to the resistance heating element 5 needs to be connected to the power supply terminal 11 and requires a reliable connection, it is made larger than the width of the band with a small electrical resistance composition so as not to act as a heat generation section. Thus, the resistance value can be kept small and the amount of heat generated can be reduced, so that the resistance heating element 5 can be reliably connected. Then, in order to heat the heating surface 3 of the plate-like body 2 in a centrosymmetric manner, the power feeding unit 6 is adjacent to the outside of the above-described ring, so that the in-plane temperature difference of the wafer can be reduced. In addition, by providing the temperature measuring element 27 in the ring, the heating temperature of the mounting surface 3 by the resistance heating element 5 can be accurately captured, and the temperature of the wafer W can be measured by measuring time delay or temperature measurement. The error can be reduced. In addition, it is preferable that the connection between the power feeding unit 6 and the end of the resistance heating element 5 is connected by a wide lead having a resistance value smaller than that of the resistance heating element 5. The power feeding unit 6 is preferably connected to the power feeding terminal 11 by brazing or pressing. The power feeding section 6 is preferably circular or polygonal larger than the width of the resistance heating element 5 in connection with the power feeding terminal 11. Note that the heater described in Patent Document 11 is provided between rectangular resistance heating elements having independent temperature measuring elements, and it is difficult to accurately control the temperature of the independent resistance heating element. The idea is completely different from the present invention in that the temperature difference cannot be reduced.

  Further, the heater 1 of the present invention has arc-shaped wiring portions 5i to 5p in which the shape of the strip-like resistance heating element 5 formed in the plate body 2 or on the main surface has substantially the same line width as shown in FIG. And the folded wiring portions 5q to 5v are configured to be substantially concentric. That is, the resistance heating element 5 connects arc-shaped wiring portions 5i to 5p having different radii arranged so as to form substantially concentric circles at almost equal intervals, and arc-shaped wiring portions 5i to 5p adjacent in the radial direction to connect a series circuit. It consists of folded wiring portions 5q to 5v to be formed, and the end portions of the arc-shaped wiring portions 5i and 5j are used as the power feeding portion 6. Therefore, the arc-shaped wiring portion 5i and the arc-shaped wiring portion 5j, the arc-shaped wiring portion 5k and the arc-shaped wiring portion 5m, the arc-shaped wiring portion 5n and the arc-shaped wiring portion 5o, and the arc-shaped wiring portion 5p are arranged to form a U-shaped pattern. Since the U-shaped patterns are concentrically arranged, if the resistance heating element 5 is heated, the temperature distribution of the heating surface 3 can be distributed concentrically from the center toward the peripheral edge.

  Then, the resistance heating element 5 is disposed in an annular shape between the circumscribed circle C2 and the inscribed circle C1 in FIG. 2, and the power feeding unit 6 is provided outside the annular ring, thereby suppressing a temperature difference in the wafer surface to be small. be able to. In FIG. 2, the power feeding unit 6 is arranged on the inner side, but it goes without saying that the same effect can be obtained even if arranged on the outer side.

  Further, arc-shaped wiring portions 5i, 5j and arc-shaped wiring portions 5k, 5m, arc-shaped wiring portions 5k, 5m and arc-shaped wiring portions 5n, 5o, arc-shaped wiring portions 5n, 5o and arc-shaped wiring portions in the U-shaped pattern adjacent in the radial direction. Since the distances L4, L5, and L6 with respect to 5p are arranged at substantially equal intervals, the amount of heat generated per unit volume in each arcuate wiring portion 5i to 5p can be made equal. Heat generation unevenness can be suppressed.

  Further, each distance between the pair of folded wiring portions 5q and the folded wiring portion 5r, the folded arc-shaped wiring portion 5s and the folded wiring portion 5t, and the folded wiring portion 5u and the folded wiring portion 5v in the U-shaped pattern located on the same circumference. It is important to make L1, L2, and L3 small corresponding to the distances L4, L5, and L6 between the arc-shaped patterns 5i to 5p adjacent in the radial direction.

  That is, in order to improve the thermal uniformity of the heating surface 3, it is necessary to equalize not only the arcuate wiring portions 5i to 5p but also the calorific values per unit volume in the folded wiring portions 5q to 5v, which are usually on the same circumference. Although the distances L1, L2, and L3 between the pair of positioned folded wiring portions 5q to 5v are designed to be the same as the distances L4, L5, and L6 between the arc-shaped wiring portions 5i to 5p adjacent in the radial direction. In such a pattern shape, since the heat generation density around the folded portion P5 between the arc-shaped wiring portions 5i to 5p and the folded wiring portions 5q to 5v is reduced, the temperature outside the folded portion P5 is decreased, and the wafer W The in-plane temperature difference becomes large, and soaking properties are impaired. In contrast, in the present invention, the distances L1, L2, and L3 between the pair of folded wiring portions 5q to 5v located on the same circumference are represented by the corresponding distances between the arc-shaped wiring portions 5i to 5p adjacent in the radial direction. Since it is smaller than L4, L5, and L6, the heat generation amount of the folded portion P5 is compensated by the heat generated from the opposed folded wiring portions 5q to 5v, and the temperature drop at the folded portion P5 can be suppressed. The in-plane temperature difference of the wafer W placed on the surface 3 can be reduced, and the thermal uniformity can be improved.

  In particular, the distances L1, L2, and L3 between the pair of folded wiring portions 5q to 5v located on the circumference are set to 30 corresponding to the corresponding distances L4, L5, and L6 between the arc-shaped wiring portions 5i to 5p adjacent in the radial direction. If it is made into% -80%, the soaking | uniform-heating property in the heating surface 3 can be improved most. More preferably, L1, L2, and L3 are 40 to 60% of the corresponding L4, L5, and L6, respectively.

  Further, the resistance heating element 5 of the present invention has a U-shaped pattern composed of the arcuate wiring portions 5i to 5p and the folded wiring portions 5q to 5v, so that excessive stress is applied to the edge portion as compared with the conventional rectangular folded resistance heating element. There is little risk of working, and even if the temperature of the wafer heating apparatus 1 is suddenly increased or decreased, the possibility of damage to the plate-like body 2 or the resistance heating element 5 is reduced, and the highly reliable wafer heating apparatus 1 can be provided.

  The resistance heating element 5 described above has a great effect when embedded in the plate-like body, and the same effect can be obtained when the belt-like resistance heating element 5 is disposed on the other main surface of the plate-like body 2. There is. In particular, when the strip-like resistance heating element 5 is formed on the other main surface, the plate-like body 2 and the resistance heating element 5 are damaged when an overcoated insulating film is formed on the resistance heating element 5. The effect of preventing this is great and preferable.

  Further, the resistance heating element 5 is composed of a plurality of U-shaped patterns that can be heated independently in a concentric ring shape, and the distance between the outermost resistance heating element band in the concentric ring shape and the inner band thereof is the outermost peripheral pattern. It is preferably smaller than the interval between the concentric bands of the resistance heating element excluding independent resistance heating elements. By forming the resistance heating element 5 in this way, it is more preferable because replenishment of more heat dissipated from the outer peripheral portion of the plate-like body 2 can be facilitated, and a temperature drop around the wafer W surface can be prevented.

  The wafer heating apparatus 1 of the present invention is more preferably divided into three concentric annular zones 4 corresponding to the heating surface 3 of the wafer W. Evenly heating the surface of the disk-shaped wafer W is affected by the atmosphere around the wafer W, the wall surface facing the wafer W, and the flow of gas, but the surface temperature of the disk-shaped wafer W varies. This is because the flow around the wafer W, the opposing surface of the upper surface, and the flow of the atmospheric gas are designed to be symmetrical with respect to the wafer W. In order to uniformly heat the wafer W, the wafer heating apparatus 1 that matches the above-mentioned environment that is symmetric with respect to the wafer W is required, and it is preferable to divide the heating surface 3 into the central symmetry to form the zone 4.

  In particular, in order to uniformly heat the surface temperature of the wafer W of 300 mm or more, it is preferable that there are three concentric annular zones.

  FIG. 3A shows an example of the zone 4 of the present invention. The zone 4 includes a plurality of zones 4 on one main surface of the plate-like body 2, and a zone 4 b, 4 cd, a zone 4 eh in a circular zone 4 a at the center, and three concentric rings outside the zone 4 Is provided. In order to improve the thermal uniformity of the wafer W, the resistance heating element 5 is divided corresponding to four zones.

  Further, the outer diameter D1 of the center zone 4a of the wafer heating apparatus 1 of the present invention is 23 to 33% of the outer diameter D of the outer zone 4eh, and the outer diameter D2 of the outer zone 4bc is the outer circumference. If the inner diameter D3 of the outermost zone is 63 to 83% of the outer diameter D of the outermost zone, the in-plane temperature difference of the wafer W can be reduced. preferable.

  The outer diameter D of the outer peripheral zone 4eh is the diameter of a circumscribed circle surrounding the resistance heating element 5eh constituting the zone 4eh when viewed from a projection plane parallel to the other main surface of the plate-like body 2. Similarly, the outer diameter D2 of the zone 4b is a diameter of a circle circumscribing the resistance heating element 5b constituting the zone 4b. D3 is the diameter of a circle inscribed in the resistance heating element 5cd. The circumscribed circle can be obtained along a concentric circular arc except for the connection portion 6 a with the resistance heating element 5 connected to the power feeding portion 6.

  If the outer diameter D1 is less than 23% of D, the outer diameter of the central zone 4a is too small, so even if the calorific value of the zone 4a is increased, the temperature of the central portion of the zone 4a does not rise and the temperature of the central portion decreases. It is because there is a possibility of doing. Further, if the outer diameter D1 exceeds 33%, the outer diameter of the central zone 4a is too large. Therefore, when the temperature of the central portion is raised, the temperature of the peripheral portion of the zone 4a increases, and the peripheral portion of the zone 4a increases. This is because the temperature may become too high. Preferably, the outer diameter D1 is 25 to 30% of D, and more preferably the outer diameter D1 is 26 to 29% of D, so that the in-plane temperature difference of the wafer W can be further reduced. .

  Further, when the outer diameter D2 is less than 45% of the outer diameter D, the peripheral portion of the wafer heating apparatus 1 is easily cooled. Therefore, when the amount of heat generated in the zone 4cd is increased in order to prevent a decrease in the temperature around the wafer W. There is a possibility that the temperature inside the zone 4cd near the center of the wafer W becomes high and the in-plane temperature difference of the wafer W becomes large. Further, if the outer diameter D2 exceeds 55% of the outer diameter D, the temperature of the zone 4cd rises even if the amount of heat generated in the zone 4cd is increased in order to prevent the temperature around the wafer W from decreasing. There is a possibility that the influence of the temperature decrease reaches the zone 4b and the temperature outside the zone 4b is lowered. Preferably, when the outer diameter D2 is 47% to 53% of the outer diameter D, and more preferably 48 to 51%, the in-plane temperature difference of the wafer W can be further reduced.

  Further, when the outer diameter D3 is less than 63% of the outer diameter D, the peripheral portion of the wafer heating apparatus 1 is easily cooled. Therefore, when the amount of heat generated in the zone 4eh is increased in order to prevent a decrease in the temperature around the wafer W. There is a possibility that the temperature inside the zone 4eh near the center of the wafer W becomes high and the in-plane temperature difference of the wafer W becomes large. Further, if the outer diameter D3 exceeds 83% of the outer diameter D, the temperature of the zone 4eh is increased even if the heat generation amount of the zone 4eh is increased to prevent the temperature around the wafer W from being lowered. There is a possibility that the temperature decrease affects the zone 4cd and the temperature outside the zone 4cd is lowered. Preferably, when the outer diameter D3 is 68% to 78% of the outer diameter D, and more preferably 71 to 75%, the in-plane temperature difference of the wafer W can be further reduced.

  Further, in the wafer heating apparatus 1 composed of the resistance heating elements 5 arranged in a plurality of annular shapes as described above, from the left and right subtle asymmetry caused by the surrounding environment, and the manufacturing method of the belt-shaped resistance heating elements. For example, in screen printing, when a large resistance heating element is printed, there is a possibility that the thickness variation on the left and right becomes large. It has been found that it is preferable to further divide the above-mentioned annular zone because of such restrictions on the use environment and the manufacturing method because the in-plane temperature difference of the wafer becomes smaller.

  FIG.3 (b) shows an example of the zone which subdivided the annular zone 4 of the wafer heating apparatus 1 of this invention. Out of the four annular zones 4a, 4b, 4cd, 4eh, the inner zones 4a, 4b are annular zones 4a, 4b, and the outer zone 4cd is an annular zone 2 in the circumferential direction. Two fan-like zones 4c and 4d are equally divided, and the outer zone 4eh is composed of four fan-like zones 4e, 4f, 4g and 4h obtained by dividing the ring into four equal parts in the circumferential direction. This is preferable for making the surface temperature of the wafer W uniform.

  Each of the zones 4c to 4g of the wafer heating apparatus 1 can generate heat independently, and preferably includes independent resistance heating elements 5c to 5g corresponding to the zones 4c to 4g.

  Further, the zone 4a and the zone 4b can be connected in parallel or in series and controlled as one circuit unless the installation location which is also the external environment of the wafer heating apparatus 1 is frequently changed. The reason for this configuration is that a predetermined interval can be set between the zones 4a and 4b, so that a through hole 26 through which a lift pin for lifting the wafer W passes can be installed.

  The annular zones 4cd and 4eh are divided into two and four in the radial direction, respectively, but this is not restrictive.

  The boundary lines of the zones 4c and 4d in FIG. 3B are straight lines, but are not necessarily straight lines, and may be wavy lines. The zones 4c and 4d are centered with respect to the center of the concentric heating element zone. Symmetry is preferred.

  Similarly, the boundary lines of zones 4e and 4f, 4f and 4g, 4g and 4h, 4h and 4e do not necessarily have to be straight lines, and may be wavy lines, and the center of the concentric heating element zone Is preferably centrally symmetric.

  As described above, the outer size of the zone 4 has been described in detail. The greatest feature of the zone 4 of the present invention is that a blank area in which the resistance heating element 5 does not exist can be provided in an annular shape between the respective annular rings. . By taking a blank area in this way, it is possible to form a large power feeding section 6 in the blank area, and it is possible to prevent the occurrence of temperature variations due to the power feeding section 6. Since the diameter D11 on the center side of the central zone 4a can be 10 to 20% of the diameter D, for example, support pins 8 can be provided in the range of the diameter D11. Decrease etc. can be prevented.

  Further, the inner diameter D22 of the second annular ring 4b from the center can be set to 30 to 35% of the diameter D. By setting in this way, an annular ring having a diameter of about 5% between the annular rings 4a and 4b. Therefore, even if lift pins 25 and the like are provided in this region, a temperature drop in the wafer surface can be prevented to a minimum.

  Further, the inner diameter D33 of the zone 4cd can be set to 55 to 65% of the diameter D, and a resistance heating element blank area of about 5% of the diameter can be annularly provided between the zones 4b and 4cd. A power feeding unit 6 that feeds power to each resistance heating element can be provided in the annular region.

  Further, the inner diameter D0 of the zone 4eh can be 82 to 93% of the diameter D. Therefore, it is possible to provide a resistance blank area having a width of about 5 to 10% of the diameter between the zones 4eh and 4cd in an annular shape. By providing the wafer support pins 8 and the power feeding unit 6 in the annular blank area, it becomes easy to heat the wafer W without increasing the temperature variation in the wafer surface.

  Each of the resistance heating elements 5 is preferably produced by a printing method or the like, and the band of the resistance heating element 5 is preferably formed with a width of 1 to 5 mm and a thickness of 5 to 50 μm. When the printing surface to be printed at one time becomes large, there is a concern that the printing thickness may not be constant due to the difference in pressure between the squeegee and the screen on the left and right or front and back of the printing surface. In particular, when the size of the resistance heating element 5 is increased, the thickness of the resistance heating element 5 on the left and right sides is different and the designed heat generation may vary. The amount of heat generation varies, and the in-plane temperature difference between the wafer W increases, which is not preferable. In order to prevent the temperature variation caused by the variation in thickness of the resistance heating element, it has been found that it is effective to divide the individual resistance heating elements 5 having a large outer diameter, which is composed of one resistance heating element.

  Therefore, the concentric annular zone 4cd excluding the central portion of the wafer W heating surface 3 is divided into left and right parts, and the larger annular zone 4eh is divided into four parts so that the resistance heating element 5 in the zone 4 is printed. Therefore, the thickness of each part of the resistance heating element 5 can be made uniform, and the subtle temperature difference between the front, back, left and right of the wafer W can be corrected to make the surface temperature of the wafer W uniform. . Further, in order to finely adjust the resistance value of the band of each resistance heating element 5, it is possible to adjust the resistance value by forming a long groove with a laser or the like along the resistance heating element.

  Note that the resistance heating elements 5a, 5b, 5c, 5d, 5e, 5f, 5g, and 5h shown in FIG. 4 each have a folded pattern.

  Further, the wafer heating apparatus 1 of the present invention is a wafer heating apparatus 1 having a resistance heating element 5 on one main surface of a plate-like body 2, and is provided on the outer periphery of the plate-like body 2 as shown in FIG. The resistance heating elements 5e, 5f, 5g, and 5h that are positioned are arc-shaped wiring portions 51 that are concentric in a portion far from the center of the plate-like body 2 and a small arc-shaped wiring portion 52 that is a continuous pattern continuously connected to these. Preferably it consists of. The power supply unit 6 for supplying power to the resistance heating element 5 and a metal case 19 surrounding the power supply unit 6 are provided with a wafer heating surface on the other main surface of the plate-like body 2 and on the other main surface. The diameter D of the circumscribed circle C of the resistance heating element 5 is preferably 90 to 97% of the diameter DP of the plate-like body 2 when viewed in parallel projection planes.

  If the diameter D of the circumscribed circle C of the resistance heating element 5 is smaller than 90% of the diameter DP of the plate-like body 2, the time for rapidly raising or lowering the temperature of the wafer increases and the temperature response characteristics of the wafer W are inferior. . Further, in order to uniformly heat the surface temperature of the wafer W so as not to lower the temperature at the periphery of the wafer W, the diameter D is preferably about 1.02 times the diameter of the wafer W that is the object to be heated. The diameter DP of the plate-like body 2 increases with respect to the size of W, and the size of the wafer W that can be heated uniformly becomes smaller than the diameter DP of the plate-like body 2. On the other hand, the heating efficiency for heating the wafer W is deteriorated. Furthermore, since the plate-like body 2 becomes large, the installation area of the wafer manufacturing apparatus becomes large, which is not preferable because the operation rate with respect to the installation area of the semiconductor manufacturing apparatus that needs to perform the maximum production with the minimum installation area is lowered.

  When the diameter D of the circumscribed circle C of the resistance heating element 5 is larger than 97% of the diameter DP of the plate-like body 2, the distance between the contact member 17 and the outer periphery of the resistance heating element 5 is small, and heat is transmitted from the outer periphery of the resistance heating element 5. Heat flows non-uniformly to the contact member 17, and in particular, heat also flows from a portion where the arc-shaped pattern 51 in contact with the circumscribed circle C on the outer peripheral portion does not exist, and the arc-shaped pattern 51 on the outer peripheral portion bends to the center of the plate-like body 2. For this reason, the temperature of the portion P where the arc-shaped pattern 51 is missing along the circumscribed circle C surrounding the resistance heating element 5 may decrease, and the in-plane temperature difference of the wafer W may be increased. More preferably, the diameter D of the circumscribed circle C of the resistance heating element 5 is 92 to 95% of the diameter DP of the plate-like body 2.

  Further, as shown in FIG. 1, in the case where the outer diameters of the plate-like body 2 and the metal case 19 are substantially equal and the metal case 19 supports the plate-like body 2 from below, in order to reduce the in-plane temperature difference of the wafer W. The diameter D of the circumscribed circle C of the resistance heating element 5 is 91 to 95%, more preferably 92 to 94% of the diameter DP of the plate-like body 2.

  Furthermore, in the wafer heating apparatus 1 of the present invention, for example, the arc-shaped pattern 51 in contact with the circumscribed circle C of the resistance heating element 5 in FIG. 4 and the small arc-shaped wiring portion which is a connection pattern continuously connected to the arc-shaped wiring portion 51. 52, the interval L1 of the blank area P without the arc-shaped pattern in a part of the circumscribed circle C is the difference between the diameter DP of the plate-like body and the diameter D of the circumscribed circle C (hereinafter referred to as LL). It is preferable to be smaller. If the distance L1 is larger than LL, the heat of the blank area P flows to the peripheral part of the plate-like body, and the temperature of the blank area P may be lowered. However, if the distance L1 is smaller than LL, the temperature of the blank area P is difficult to decrease, and the temperature of a part of the peripheral portion of the wafer W placed on the heating surface 3 of the plate-like body 2 does not decrease, and the temperature difference in the wafer W surface is reduced. Smaller is preferable.

  In order not to lower the temperature of the blank area P, it is necessary to increase the temperature of the blank area. If the resistance of the connection pattern 52 for heating the blank area is equal or slightly increased to increase the heat generation amount, the blank area The possibility that the temperature of P decreases is reduced, and the in-plane temperature of the wafer W becomes uniform, which is preferable. When the resistance heating element 5 created by a printing method or the like is planar, the connection pattern 52 is reduced by reducing the line width Ws of the small arc-shaped wiring portion 52 which is a connection pattern from the line width Wp of the arc-shaped pattern 51 by 1 to 5%. , And the in-plane temperature of the wafer W can be made uniform by raising the temperature of the small arc-shaped wiring portion 52 as the connection pattern higher than the temperature of the arc-shaped pattern 51.

  Further, one main surface side of the plate-like body 2 having a plate thickness of 1 to 7 mm is used as a heating surface 3 on which a wafer is placed, and a wafer heating apparatus 1 provided with a resistance heating element 5 on the lower surface of the plate-like body 2. The thickness of the resistance heating element 5 is 5 to 50 μm, and the area of the circumscribed circle C surrounding the resistance heating element 5 when viewed in a projection plane parallel to the main surface of the plate-like body 2 is The area ratio of the resistance heating element 5 to the circumscribed circle C is preferably 5 to 30%.

  That is, if the ratio of the area of the resistance heating element 5 in the circumscribed circle C to the area of the circumscribed circle C surrounding the resistance heating element 5 is less than 5%, Since L1, L2,..., Which are also the opposing intervals of the regions, become too large, the surface temperature of the heating surface 3 corresponding to the interval L1 without the resistance heating element 5 becomes smaller than the other portions, and the heating surface If the ratio of the area of the resistance heating element 5 in the circumscribed circle C to the area of the circumscribed circle C surrounding the resistance heating element 5 is more than 30%. Even if the thermal expansion difference between the plate-like body 2 and the resistance heating element 5 is approximated to 2.0 × 10 −6 / ° C. or less, the thermal stress acting between the two is too large. Although the ceramic 2 is not easily deformed and the Young's modulus is large and preferable, When the thickness t of that 1mm~7mm and thin, thereby heating the resistance heating element 5 from the heating surface 3 side there is a fear that warp is generated in the plate-like body 2 so that the concave. As a result, the temperature of the central portion of the wafer W becomes lower than the peripheral edge, and there is a possibility that the temperature variation becomes large.

  Preferably, the ratio of the area of the resistance heating element 5 in the circumscribed circle C to the area of the circumscribed circle C surrounding the resistance heating element 5 is 7% to 20%, more preferably 8% to 15%. Is preferred.

  More specifically, the resistance heating element 5 has a counter area that opposes the outer peripheral portion, and the distance L1 between the counter areas is 0.5 mm or more and is not more than three times the plate thickness of the plate-like body 2. It is preferable. When the distance L1 between the opposing regions is 0.5 mm or less, when the resistance heating element 5 is printed and formed, whisker-like protrusions may occur in the opposing region of the resistance heating element 5 and the portion may be short-circuited. Further, if the distance L1 between the opposing regions exceeds three times the thickness of the plate-like body 2, a cool zone may be generated on the surface of the wafer W corresponding to the opposing region L1, and the in-plane temperature difference of the wafer W may be increased. Because there is.

  Furthermore, in order to efficiently exhibit such an effect, the thickness of the resistance heating element 5 is preferably set to 5 to 50 μm.

  This is because if the thickness of the resistance heating element 5 is less than 5 μm, it becomes difficult to uniformly print the resistance heating element 5 by screen printing, and the thickness of the resistance heating element 5 exceeds 50 μm. Even if the ratio of the area occupied by the resistance heating element 5 to the circumscribed circle c is 30% or less, the thickness of the resistance heating element 5 is increased, the rigidity of the resistance heating element 5 is increased, and the temperature change of the plate-like body 5 There is a possibility that the plate-like body 2 is deformed by the influence of the expansion and contraction of the resistance heating element 5. In addition, it is difficult to print to a uniform thickness by screen printing, and the temperature difference on the surface of the wafer W may increase. A preferable thickness of the resistance heating element 5 is 10 to 30 μm.

  A more detailed configuration will be described.

  FIG. 1 is a cross-sectional view showing an example of a wafer heating apparatus according to the present invention. One main surface of a plate-like body 2 having a plate thickness t of 1 to 7 mm and a Young's modulus of 100 to 200 ° C. of 200 to 450 MPa, In addition to the heating surface 3 on which the wafer W is placed, a resistance heating element 5 is formed on the other main surface, and a power feeding unit 6 electrically connected to the resistance heating element 5 is provided.

  As a material of the plate-like body 2 having a Young's modulus at 100 to 200 ° C. of 200 to 450 MPa, alumina, silicon nitride, sialon, and aluminum nitride can be used. Among these, aluminum nitride is 50 W / (m · K). In addition to having a high thermal conductivity of 100 W / (m · K) or more, and being excellent in corrosion resistance and plasma resistance to corrosive gases such as fluorine and chlorine, the material of the plate-like body 2 It is suitable as.

  The thickness of the plate-like body 2 is more preferably 2 to 5 mm. If the thickness of the plate-like body 2 is less than 2 mm, the strength of the plate-like body 2 is lost, and when the resistance heating element 5 is heated by the heat generated, when the cooling air from the gas injection port 24 is blown, It is because it cannot endure and there exists a possibility that the crack may generate | occur | produce in the plate-shaped body 2. FIG. On the other hand, if the thickness of the plate-like body 2 exceeds 5 mm, the heat capacity of the plate-like body 2 increases, so that there is a possibility that the time until the temperature during heating and cooling becomes stable becomes longer.

  The plate-like body 2 has a bolt 16 passing through the outer periphery of the opening of the bottomed metal case 19, and a ring-shaped contact member 17 is interposed so that the plate-like body 2 and the bottomed metal case 19 do not directly contact each other. The nut 20 is screwed in via the elastic body 18 from the bottomed metal case 19 side and is elastically fixed. Thereby, even if the bottomed metal case 19 is deformed when the temperature of the plate-like body 2 fluctuates, it is absorbed by the elastic body 18, thereby suppressing the warpage of the plate-like body 2 and the wafer surface. In addition, it is possible to prevent temperature variations due to warpage of the plate-like body 2.

  The cross section of the ring-shaped contact member 17 may be either polygonal or circular. However, when the plate-like body 2 and the contact member 17 are in contact with each other in a plane, the width of the contact portion where the plate-like body 2 and the contact member 17 are in contact is as follows. If it is 0.1 mm-13 mm, the amount of heat of the plate-like body 2 can be reduced to the bottomed metal case 19 via the contact member 17. And the temperature difference in the surface of the wafer W is small, and the wafer W can be heated uniformly. More preferably, it is 0.1-8 mm. If the width of the contact portion of the contact member 17 is 0.1 mm or less, the contact portion may be deformed when the plate 2 is contacted and fixed, and the contact member may be damaged. Further, when the width of the contact portion of the contact member 17 exceeds 13 mm, the heat of the plate-like body 2 flows to the contact member, the temperature of the peripheral portion of the plate-like body 2 is lowered, and the wafer W is uniformly heated. Becomes difficult. Preferably, the width of the contact portion between the contact member 17 and the plate-like body 2 is 0.1 mm to 8 mm, more preferably 0.1 to 2 mm.

  Further, the thermal conductivity of the contact member 17 is preferably smaller than the thermal conductivity of the plate-like body 2. If the thermal conductivity of the contact member 17 is smaller than the thermal conductivity of the plate-like body 2, the temperature distribution in the surface of the wafer W placed on the plate-like body 2 can be heated uniformly, and the temperature of the plate-like body 2 can be changed. When raising or lowering, the amount of heat transfer with the contact member 17 is small, and there is little thermal interference with the bottomed metal case 19, making it easy to change the temperature quickly.

  In the wafer heating apparatus 1 in which the thermal conductivity of the contact member 17 is smaller than 10% of the thermal conductivity of the plate-like body 2, it is difficult for the heat of the plate-like body 2 to flow into the bottomed metal case 19. The heat of the bottom metal case 19 increases due to heat transfer by atmospheric gas (in this case, air) or radiation heat transfer, and the effect is small.

  When the thermal conductivity of the contact member 17 is larger than the thermal conductivity of the plate-like body 2, the heat of the peripheral part of the plate-like body 2 flows to the bottomed metal case 19 through the contact member 17, While heating the metal case 19, the temperature of the peripheral part of the plate-shaped body 2 falls and the temperature difference in the wafer W surface becomes large, which is not preferable. In addition, since the bottomed metal case 19 is heated, even if it is attempted to cool the plate-like body 2 by injecting air from the gas injection port 24, the cooling time increases because the temperature of the bottomed metal case 19 is high. When heating to a constant temperature, there is a concern that the time until the temperature reaches a certain temperature may increase.

  On the other hand, as a material constituting the contact member 17, the Young's modulus of the contact member is preferably 1 GPa or more, and more preferably 10 GPa or more in order to hold a small contact portion. With such a Young's modulus, even if the contact portion width is as small as 0.1 mm to 8 mm and the plate-like body 2 is fixed to the bottomed metal case 19 with the bolt 16 via the contact member 17, the contact The member 17 is not deformed, and the plate-like body 2 can be held with high accuracy without being displaced or changing the parallelism.

  In addition, the precision which cannot be obtained with the contact member which consists of resin which added fluororesin and glass fiber like patent document 2 can be achieved.

  As the material of the contact member 17, metals such as carbon steel made of iron and carbon and special steel added with nickel, manganese, and chromium are preferable because of their large Young's modulus. Further, as the material having low thermal conductivity, so-called Kovar such as stainless steel or Fe—Ni—Co alloy is preferable, and the material of the contact member 17 may be selected so as to be smaller than the thermal conductivity of the plate-like body 2. preferable.

  Furthermore, since the contact portion between the contact member 17 and the plate-like body 2 is small, and the contact portion is small, there is no possibility of the contact portion being lost and particles are generated, so that the stable contact portion can be held. The cross-section of the contact member 17 cut along a plane perpendicular to the polygonal shape is preferably circular rather than polygonal. When a circular wire having a cross-sectional diameter of 1 mm or less is used as the contact member 17, the position of the plate-like body 2 and the bottomed metal case 19 is It is possible to raise and lower the temperature of the wafer W uniformly and quickly without changing.

  Next, the bottomed metal case 19 has a side wall portion 22 and a bottom surface 21, and the plate-like body 2 is installed so as to cover the opening of the bottomed metal case 19. The bottomed metal case 19 is provided with a hole 23 for discharging the cooling gas, and the power supply terminal 11 for conducting to the power supply unit 6 for supplying power to the resistance heating element 5 of the plate-like body 2. , A gas injection port 24 for cooling the plate-like body 2 and a thermocouple 27 for measuring the temperature of the plate-like body 2 are provided.

  In addition, the depth of the bottomed metal case 19 is 10 to 50 mm, and the bottom surface 21 is desirably installed at a distance of 10 to 50 mm from the plate-like body 2. More preferably, it is 20-30 mm. This is because heat equalization of the heating surface 3 is facilitated by radiant heat between the plate-like body 2 and the bottomed metal case 19, and at the same time, since there is a heat insulation effect from the outside, the temperature of the heating surface 3 is constant and uniform. This is because the time until the temperature is reached is shortened.

  Then, work such as placing the wafer W on the heating surface 3 or lifting it from the heating surface 3 is performed by lift pins 25 installed in the bottomed metal case 19 so as to be movable up and down. Then, the wafer W is held in a state of being lifted from the heating surface 3 by the wafer support pins 8 so as to prevent temperature variation due to one piece contact or the like.

  In addition, in order to heat the wafer W by the wafer heating apparatus 1, the lift pin 25 is lowered after the wafer W carried to the upper part of the heating surface 3 by the transfer arm (not shown) is supported by the lift pin 25. Wafer W is placed on heating surface 3.

  Next, when the wafer heating apparatus 1 is used for forming a resist film, if the main component of the plate-like body 2 is made of silicon carbide, the wafer does not react with moisture in the atmosphere and no gas is generated. Even if it is used for attaching a resist film on W, fine wiring can be formed at a high density without adversely affecting the structure of the resist film. At this time, it is necessary that the sintering aid does not contain nitrides that may react with water to form ammonia or amines.

  In the silicon carbide sintered body forming the plate-like body 2, boron (B) and carbon (C) are added as sintering aids to the main component silicon carbide, or alumina (Al2O3) yttria is added. It is obtained by adding a metal oxide such as (Y 2 O 3), mixing well, processing into a flat plate shape, and firing at 1900 to 2100 ° C. Silicon carbide may be either mainly α-type or β-type.

  On the other hand, when a silicon carbide sintered body is used as the plate-like body 2, glass or resin is used as an insulating layer for maintaining insulation between the semi-conductive plate-like body 2 and the resistance heating element 5. In the case of using glass, if the thickness is less than 100 μm, the withstand voltage is less than 1.5 kV and the insulation cannot be maintained. Conversely, if the thickness exceeds 400 μm, the silicon carbide that forms the plate-like body 2 Since the difference in thermal expansion between the sintered body and the aluminum nitride sintered body becomes too large, cracks occur and the insulating layer does not function. Therefore, when glass is used as the insulating layer, the thickness of the insulating layer 4 is preferably formed in the range of 100 to 400 μm, and desirably in the range of 200 μm to 350 μm.

  Furthermore, the main surface opposite to the heating surface 3 of the plate-like body 2 has a flatness of 20 μm or less and a surface roughness with a centerline average roughness (from the viewpoint of enhancing the adhesion to the insulating layer 4 made of glass or resin. It is preferable to polish to 0.1 μm to 0.5 μm with Ra).

  When the plate-like body 2 is formed of a sintered body mainly composed of aluminum nitride, a rare earth element oxide such as Y2O3 or Yb2O3 is used as a sintering aid with respect to the main component aluminum nitride as necessary. Then, an alkaline earth metal oxide such as CaO is added and mixed sufficiently, and after processing into a flat plate, it is obtained by firing at 1900 to 2100 ° C. in nitrogen gas. In order to improve the adhesion of the resistance heating element 5 to the plate-like body 2, an insulating layer made of glass may be formed. However, when sufficient glass is added in the resistance heating element 5 and sufficient adhesion strength can be obtained by this, it can be omitted.

  The glass that forms this insulating layer may be crystalline or amorphous, and has a heat-resistant temperature of 200 ° C. or higher and a thermal expansion coefficient in the temperature range of 0 ° C. to 200 ° C. constituting the plate-like body 2. It is preferable to appropriately select and use a material in the range of −5 to + 5 × 10 −7 / ° C. with respect to the thermal expansion coefficient of the ceramic. That is, if a glass whose thermal expansion coefficient is out of the above range is used, the difference in thermal expansion from the ceramic forming the plate-like body 2 becomes too large, so that there are defects such as cracks and peeling during cooling after baking the glass. It is because it is easy to occur.

  As a means for depositing an insulating layer made of glass on the plate-like body 2, an appropriate amount of the glass paste is dropped on the center of the plate-like body 2 and stretched by a spin coating method to be uniformly applied, or After applying uniformly by a screen printing method, dipping method, spray coating method or the like, the glass paste may be baked at a temperature of 600 ° C. or higher. Moreover, when using glass as an insulating layer, the plate-like body 2 made of a silicon carbide sintered body or an aluminum nitride sintered body is heated to a temperature of about 850 to 1300 ° C. in advance, and the surface on which the insulating layer is deposited is formed. By performing the oxidation treatment, the adhesion with the insulating layer made of glass can be enhanced.

  As the pattern shape of the resistance heating element 5 of the present invention, it is divided into a plurality of blocks as shown in FIG. 3 and FIG. 4, and each block has an arc-shaped pattern, a linear pattern, a small arc-shaped pattern, or a zigzag pattern. Since the wafer heating apparatus 1 of the present invention is important to uniformly heat the wafer W, it is important that these pattern shapes have a uniform density of each part of the belt-like resistance heating element 5. preferable.

  When the resistance heating element 5 is divided into a plurality of blocks, it is preferable to uniformly heat the wafer W on the heating surface 3 by independently controlling the temperature of each block.

  The resistance heating element 5 is obtained by printing and baking an electrode paste containing glass frit or metal oxide on conductive metal particles on the plate-like body 2 by a printing method. As the metal particles, Au, Ag, Cu, Pd It is preferable to use at least one metal of Pt, Rt, and the glass frit is made of an oxide containing B, Si, Zn and is 4.5 × 10 −6 smaller than the thermal expansion coefficient of the plate-like body 2. It is preferable to use low-expansion glass at / ° C. or lower, and it is preferable to use at least one selected from silicon oxide, boron oxide, alumina, and titania as the metal oxide.

  Here, the reason why at least one kind of metal of Au, Ag, Cu, Pd, Pt, Rh is used as the metal particles forming the resistance heating element 5 is that the electric resistance is small.

  The glass frit forming the resistance heating element 5 is made of an oxide containing B, Si, Zn, and the thermal expansion coefficient of the metal particles constituting the resistance heating element 5 is larger than the thermal expansion coefficient of the plate-like body 2. In order to bring the coefficient of thermal expansion of the resistance heating element 5 close to the coefficient of thermal expansion of the plate-like body 2, it is necessary to use a low expansion glass of 4.5 × 10 −6 / ° C. or less that is smaller than the thermal expansion coefficient of the plate-like body 2. It is because it is preferable.

  In addition, as the metal oxide forming the resistance heating element 5, using at least one selected from silicon oxide, boron oxide, alumina, and titania has excellent adhesion to the metal particles in the resistance heating element 5, Moreover, the thermal expansion coefficient is close to the thermal expansion coefficient of the plate-like body 2, and the adhesion with the plate-like body 2 is also excellent.

  However, if the content of the metal oxide exceeds 80% with respect to the resistance heating element 5, the adhesion with the plate-like body 2 is increased, but the resistance value of the resistance heating element 5 is not preferable. Therefore, the content of the metal oxide is preferably 60% or less.

  The resistance heating element 5 made of conductive metal particles and glass frit or metal oxide preferably has a thermal expansion difference of 3.0 × 10 −6 / ° C. or less from the plate-like body 2. .

  That is, it is difficult to manufacture the difference in thermal expansion between the resistance heating element 5 and the plate-like body 2 to be 0.1 × 10 −6 / ° C. On the contrary, the difference in thermal expansion between the resistance heating element 5 and the plate-like body 2 is difficult. If the temperature exceeds 3.0 × 10 −6 / ° C., the heating surface 3 may be warped in a concave shape due to thermal stress acting between the resistance heating element 5 and the plate-like body 2 when the resistance heating element 5 is heated. It is.

  Further, as the resistance heating element 5 material deposited on the insulating layer, a simple metal such as gold (Au), silver (Ag), copper (Cu), palladium (Pd) or the like is directly applied by a vapor deposition method or a plating method. Prepare a paste in which the metal alone, conductive metal oxides such as rhenium oxide (Re2O3), lanthanum manganate (LaMnO3), and the above metal materials are dispersed in a resin paste or glass paste. The pattern shape may be printed by a screen printing method or the like and then baked to bond the conductive material with a matrix made of resin or glass. When glass is used as the matrix, either crystallized glass or amorphous glass may be used, but crystallized glass is preferably used in order to suppress a change in resistance value due to thermal cycling.

  However, when silver (Ag) or copper (Cu) is used for the resistance heating element 5 material, migration may occur. In such a case, the same as the insulating layer is provided so as to cover the resistance heating element 5. What is necessary is just to coat | cover the coating layer which consists of material with the thickness of about 40-400 micrometers.

  Further, regarding the method of feeding power to the resistance heating element 5, the feeding terminal 11 installed on the bottomed metal case 19 is connected to the feeding part 6 formed on the surface of the plate-like body 2 by pressing it with a spring (not shown). Secure and supply power. This is because when the terminal portion made of metal is embedded in the plate-like body 2 having a thickness of 2 to 5 mm, the thermal uniformity is deteriorated due to the heat capacity of the terminal portion. Therefore, as in the present invention, by pressing the power supply terminal 11 with a spring to ensure electrical connection, the thermal stress due to the temperature difference between the plate-like body 2 and the bottomed metal case 19 is relaxed, Electrical continuity can be maintained with high reliability. Further, an elastic conductor may be inserted as an intermediate layer in order to prevent the contact from becoming a point contact. This intermediate layer is effective by simply inserting a foil-like sheet. And it is preferable that the diameter by the side of the electric power feeding part 6 of the electric power feeding terminal 11 shall be 1.5-5 mm.

  Further, the temperature of the plate-like body 2 is measured by a thermocouple 27 whose tip is embedded in the plate-like body 2. As the thermocouple 27, it is preferable to use a sheath-type thermocouple 27 having an outer diameter of 0.8 mm or less from the viewpoint of responsiveness and workability of holding. In order to improve the reliability of temperature measurement, it is preferable that the tip of the thermocouple 27 has a hole formed in the plate-like body 2 and is fixed to the inner wall surface of the hole by a fixing member installed therein. Similarly, it is also possible to perform temperature measurement by embedding a temperature measuring resistor such as a thermocouple of a wire or Pt.

  As shown in FIG. 1, a plurality of support pins 8 are provided on one main surface of the plate-like body 2 to hold the wafer W at a certain distance from the one main surface of the plate-like body 2. It doesn't matter if you do.

  Although FIG. 1 shows the wafer heating apparatus 1 having only the resistance heating element 5 on the other main surface 3 of the plate-like body 2, the present invention provides a static between the main surface 3 and the resistance heating element 5. Needless to say, an electrode for electrodeposition or plasma generation may be embedded.

  First, 1.0% by mass of yttrium oxide in terms of weight was added to the aluminum nitride powder, and further kneaded for 48 hours with a ball mill using isopropyl alcohol and urethane balls to produce an aluminum nitride slurry.

  Next, the aluminum nitride slurry was passed through 200 mesh to remove urethane balls and ball mill wall debris, and then dried at 120 ° C. for 24 hours in an explosion-proof dryer.

  Next, the obtained aluminum nitride powder was mixed with an acrylic binder and a solvent to produce an aluminum nitride slip, and a plurality of aluminum nitride green sheets were produced by a doctor blade method.

  A laminate was formed by laminating a plurality of obtained aluminum nitride green sheets.

  Thereafter, the laminate is degreased at a temperature of 500 ° C. for 5 hours in a non-oxidizing gas stream, and then fired at a temperature of 1900 ° C. for 5 hours in a non-oxidizing atmosphere to obtain various thermal conductivities. A plate-like body having this was manufactured.

  The aluminum nitride sintered body was then ground to produce a plurality of disk-shaped plates having a plate thickness of 3 mm and a diameter of 330 mm, and three through-holes were formed evenly on a concentric circle 60 mm from the center. . The through-hole diameter was 4 mm.

  Next, in order to deposit a resistance heating element on the plate-like body, screen printing is performed on a conductive paste prepared by kneading Au powder and Pd powder as conductive materials and glass paste to which a binder having the same composition as described above is added. After printing in a predetermined pattern shape by the method, the organic solvent is dried by heating to 150 ° C., and after degreasing at 550 ° C. for 30 minutes, baking is performed at a temperature of 700 to 900 ° C. A resistance heating element having a thickness of 50 μm was formed.

  The arrangement of the zone, the power feeding unit, and the temperature measuring element was the arrangement shown in FIG. 3 and FIG. Then, a zone is formed in one of the circular shapes of 25% of the maximum diameter D of the resistance heating element at the center, an outer annular zone is formed, and an outer ring of 45% of the outer diameter D is formed outside thereof. It was divided into two zones, and an annular structure having an inner diameter of 70% of D at the outermost peripheral zone was divided into four zones, for a total of eight zones. And the sample was produced by setting the diameter of the circumscribed circle C of the four outermost zones to 310 mm. After that, the plate-like body 2 was manufactured by brazing and fixing the feeding portion 6 to the resistance heating element 5. In this embodiment, the resistance heating element at the center and the annular heating element on the outer side thereof are connected in parallel, and heating control is performed simultaneously.

  Further, a wafer support member was produced in which the distance L1 between the arc-shaped wiring portions was set as the distance L2 between the arc-shaped patterns adjacent in the radial direction, and the ratio was changed to L1 / L4 × 100%.

  The bottom of the bottomed metal case is made of 2.0mm of aluminum and 1.0mm of aluminum constituting the side wall, and the gas injection port, thermocouple, and conduction terminal are attached to the bottom of the case. It was. The distance from the bottom surface to the plate-like body was 20 mm.

  Thereafter, a plate-like body is overlaid on the opening of the bottomed metal case, a bolt is passed through the outer periphery thereof, and a ring-shaped contact member is provided so that the plate-like body and the bottomed metal case do not directly contact each other. A wafer heating device was obtained by interposing and elastically fixing the nut by screwing in through an elastic body from the contact member side.

  The cross section of the contact member 17 is L-shaped and annular. The upper surface of the L-shaped stepped portion and the lower surface of the plate-like body were in contact with the ring shape, and the width of the contact surface with the plate-like body was 3 mm. Moreover, the material of the contact member was a heat resistant resin. The produced various wafer heating devices were designated as sample Nos. 1-9.

  Evaluation of the produced wafer heating apparatus was performed using a temperature measuring wafer having a diameter of 300 mm in which temperature measuring resistors were embedded in 29 locations. A power supply is attached to each wafer heating device, and the temperature of the wafer W is raised from 25 ° C. to 200 ° C. in 5 minutes. After the temperature of the wafer W is set to 200 ° C., the wafer W is removed, and the temperature measuring wafer W at room temperature is heated. The time until the average temperature of the wafer W became constant in the range of 200 ° C. ± 0.5 ° C. was measured as a response time. Further, after the temperature cycle of 30 ° C. to 200 ° C. in 5 minutes and holding for 5 minutes and then cooling for 30 minutes is repeated 1000 cycles, the temperature is set from room temperature to 200 ° C. and the maximum value of the wafer temperature after 10 minutes The difference between the minimum values was measured as the temperature difference of the wafer W.

Each result is as shown in Table 1.

  Sample No. No. 9 had a large temperature difference of 1.73 ° C. because the ratio of L1 / L4 was too large at 120%.

  On the other hand, the distance between the pair of folded arc-shaped wiring portions located on the same circumference is smaller than the distance between the arc-shaped patterns adjacent in the radial direction. It was found that 1 to 8 exhibited excellent characteristics with a small temperature difference of 0.5 ° C. or less.

  Sample No. Nos. 2 to 6 have a ratio of L1 / L4 of 30 to 80%, and the temperature difference of the wafer was as small as 0.41 ° C. or less, which was further excellent.

  A plate-like body was produced in the same manner as in Example 1.

  Then, the aluminum nitride sintered body is ground to produce a plurality of disk-like bodies 2 having a plate thickness of 3 mm and a diameter of 315 mm to 330 mm, and further, three through-holes are equally formed on a concentric circle 60 mm from the center. Formed. The through-hole diameter was 4 mm.

  Next, in order to deposit the resistance heating element 5 on the plate-like body 2, a conductor paste prepared by kneading a glass paste to which a binder composed of Au powder and Pd powder as described above and a binder having the same composition as described above was kneaded. After printing in a predetermined pattern shape by screen printing, heating to 150 ° C. to dry the organic solvent, degreasing treatment at 550 ° C. for 30 minutes, and baking at 700 to 900 ° C. Thus, the resistance heating element 5 having a thickness of 50 μm was formed.

  The arrangement of the zone 4 is such that a zone is formed in one circular shape having a diameter D1 mm at the center, an annular zone is formed on the outer side thereof, and an outer ring D2 (mm) is formed on the outer side thereof in two zones. A total of eight zones were obtained by dividing the ring with the inner diameter D3 of the outermost zone into four zones. And the sample which changed the ratio of D1, D2, and D3 by making the diameter of circumscribed circle C of four outermost zones D = 310 mm was produced. In addition, an annular blank area having a width of 5% of the diameter D was provided between the annular zones 4a and 4b, and the feeding portion 6 and the lift pin through hole were formed. Further, an annular blank area having a width of 5% of the diameter D was provided between the annular zones 4b and 4cd, and a power feeding portion was formed here. Further, an annular blank area having a width of 10% of the diameter D was provided between the annular zones 4cd and 4eh, and a wafer support pin and a power feeding portion were formed here.

  After that, the plate-like body 2 was manufactured by brazing and fixing the feeding portion 6 to the resistance heating element 5. In this embodiment, the resistance heating element at the center and the annular heating element on the outer side thereof are connected in parallel, and heating control is performed simultaneously.

  Further, for comparison, a sample No. 1 having the configuration shown in FIG. 8 is used, the size of the rectangular heating element zone is 212 × 53 mm, and eight rectangular heating element zones are used. 41 was produced. Similarly, sample no. Reference numeral 42 denotes a zone having the structure shown in FIG. 7, wherein D1r is 150 mm and D2r is 310 mm. Sample No. 43 is the shape of the zone having the configuration shown in FIG. Sample No. No. 44 is a wafer heating device having a circular zone and made of one resistance heating element.

  The bottom of the bottomed metal case is made of 2.0mm of aluminum and 1.0mm of aluminum constituting the side wall, and the gas injection port, thermocouple, and conduction terminal are attached to the bottom of the case. It was. The distance from the bottom surface to the plate-like body was 20 mm.

  Thereafter, a plate-like body is overlaid on the opening of the bottomed metal case, a bolt is passed through the outer periphery thereof, and a ring-shaped contact member is provided so that the plate-like body and the bottomed metal case do not directly contact each other. A wafer heating device was obtained by interposing and elastically fixing the nut by screwing in through an elastic body from the contact member side.

  The cross section of the contact member 17 is L-shaped and annular. The size of the L-shaped cross section was such that the width of the contact surface with the plate-like body was 3 mm. Moreover, the material of the contact member was a heat resistant resin. The produced various wafer heating apparatuses were designated as sample Nos. 11 to 39.

  Evaluation of the produced wafer heating apparatus was performed using a temperature measuring wafer having a diameter of 300 mm in which temperature measuring resistors were embedded in 29 locations. A power supply is attached to each wafer heating device, and the temperature of the wafer W is raised from 25 ° C. to 200 ° C. in 5 minutes. After the temperature of the wafer W is set to 200 ° C., the wafer W is removed, and the temperature measuring wafer W at room temperature is heated. The time until the average temperature of the wafer W became constant in the range of 200 ° C. ± 0.5 ° C. was measured as a response time. Further, after the temperature cycle of 30 ° C. to 200 ° C. in 5 minutes and holding for 5 minutes and then cooling for 30 minutes is repeated 1000 cycles, the temperature is set from room temperature to 200 ° C. and the maximum value of the wafer temperature after 10 minutes The difference between the minimum values was measured as the temperature difference of the wafer W.

Each result is as shown in Table 2.

  In the wafer heating apparatus 1 according to the present invention, the wafer heating apparatus 1 of Sample Nos. 11 to 35 having a circular zone at the center and three zones in the concentric circles outside thereof has a temperature difference of the wafer W. The response time was excellent at less than 0.5 ° C. and 48 seconds or less. The outer diameter D1 of the central zone is 23 to 33% of the outer diameter D of the outermost zone, the outer diameter D2 is 40 to 55% of the outer diameter D, and the outer diameter D3 is the outer diameter D. The wafer heating apparatus 1, which is 63 to 83% of the sample No. The temperature difference of the wafer W was as small as 0.43 ° C. or less, and the response time was as small as 39 seconds or less, indicating excellent characteristics.

  Furthermore, the outer diameter D1 of the central zone is 25-30% of the circumscribed circle D of the resistance heating element. It was found that the wafer temperature difference of 13 to 15 was excellent with a small wafer temperature difference of 0.33 ° C. or less and a response time of 34 seconds or less. The outer diameter D1 is 26 to 29% of D. It was found that with the 14 wafer heating apparatus, the temperature difference of the wafer was as small as 0.31 ° C. or less, and the response time was as small as 33 seconds or less, which was further preferable.

  The outer diameter D2 is 47 to 53% of D. It was found that the wafer heating apparatus of 20 to 24 is preferable because the temperature difference of the wafer is as small as 0.39 ° C. or less and the response time is as small as 34 seconds or less. The outer diameter D2 is 48 to 51% of D. In the wafer heating apparatuses 21 to 23, it was found that the temperature difference of the wafer was as small as 0.32 ° C. or less, and the response time was as small as 31 seconds or less, which is more preferable.

  The outer diameter D3 is 68 to 78% of D. It was found that the wafer heating devices 29 to 33 were preferable because the temperature difference of the wafer was as small as 0.38 ° C. or less and the response time was as small as 39 seconds or less. The outer diameter D3 is 71 to 75% of D. It was found that, in the 30 to 32 wafer heating apparatus, the temperature difference of the wafer was as small as 0.32 ° C. or less, and the response time was as small as 34 seconds or less, which was further preferable. The outer diameter D3 is 67 to 70% of D. It was found that, with the 31 and 32 wafer heating apparatuses, the temperature difference of the wafer was as small as 0.23 ° C. or less, and the response time was as small as 28 seconds or less.

  On the other hand, sample No. It was found that 36 to 39 had a large temperature difference in the wafer surface of 1.8 ° C. or more and a response time of 55 seconds, which was inferior.

  A plate-like body was produced in the same manner as in Example 2.

  Then, the aluminum nitride sintered body is ground to produce a plurality of plate-like bodies 2 each having a plate thickness of 3 mm and a diameter of 315 mm to 345 mm, and three through-holes are equally formed on a concentric circle 60 mm from the center. Formed. The through-hole diameter was 4 mm.

  Next, in order to deposit the resistance heating element 5 on the plate-like body 2, a conductor paste prepared by kneading a glass paste to which a binder composed of Au powder and Pd powder as described above and a binder having the same composition as described above was kneaded. After printing in a predetermined pattern shape by screen printing, heating to 150 ° C. to dry the organic solvent, degreasing treatment at 550 ° C. for 30 minutes, and baking at 700 to 900 ° C. Thus, the resistance heating element 5 having a thickness of 50 μm was formed. The pattern arrangement of the resistance heating element 5 is divided into a circle and an annular shape radially from the central portion, a pattern is formed in one circular shape at the central portion, and an outer annular resistance heating element is formed. The annular portion is provided with two resistance heating elements, and further four patterns are formed on the outermost periphery, for a total of eight patterns. Then, the diameter of the circumscribed circle C of the four outermost resistance heating elements was set to 310 mm, and the diameter of the plate ceramic was changed. After that, the plate-like body 2 was manufactured by brazing and fixing the feeding portion 6 to the resistance heating element 5.

  Further, the bottom of the bottomed metal case is made of 2.0 mm aluminum and 1.0 mm thick aluminum constituting the side wall, and the gas injection port, the thermocouple, and the conduction terminal are arranged at predetermined positions on the bottom. Attached to. The distance from the bottom surface to the plate-like body was 20 mm.

  Thereafter, a plate-like body is overlaid on the opening of the bottomed metal case, and a bolt is passed through the outer peripheral portion thereof, so that the plate-like body and the bottomed metal case do not directly contact each other. The wafer heating apparatus was obtained by interposing a ring-shaped contact member similar to 1 and elastically fixing by screwing a nut through an elastic body from the contact member side.

  The produced wafer heating apparatus was evaluated in the same manner as in Example 1.

Each result is as shown in Table 3.

  Sample No. in Table 3 In No. 45, the ratio of the circumscribed circle of the resistance heating element to the diameter of the plate-like body was as small as 85%, the in-plane temperature difference of the wafer was slightly large as 0.47 ° C., and the response time was slightly large as 34 seconds.

  In Sample No. 52, the ratio of the circumscribed circle of the resistance heating element to the diameter of the plate-like body is 99%, the in-plane temperature difference of the wafer is slightly large, 0.44 ° C., and the response time is also slightly large, 35 seconds. It was.

  On the other hand, sample Nos. 46 to 51 are excellent because the temperature difference in the plane of the wafer is as small as 0.31 ° C. or less and the response time is as small as 31 seconds or less. It was found that the ratio of the circumscribed circle of the body is 90 to 97%, which is an excellent wafer heating apparatus. Furthermore, the ratio of the circumscribed circle of the resistance heating element to the diameter of the plate-like body is 92 to 95%. 47 to 49 were found to be more preferable because the wafer surface temperature difference was 0.25 ° C. or less and the response time was 26 seconds or less.

  A plate-like body was produced in the same manner as in Example 1.

  However, the paste printing thickness was 20 μm, and the ratio of the area occupied by the resistance heating element to the circumscribed circle surrounding the resistance heating element was prepared.

And it evaluated similarly to Example 1. FIG. The results are shown in Table 4.

  As a result, as in sample No. 60, the sample in which the ratio of the area occupied by the resistance heating element to the circumscribed circle surrounding the resistance heating element is less than 5% has a temperature difference in the plane of the wafer of 0.45 ° C. It was a little big. As in sample No. 67, when the ratio of the area occupied by the resistance heating element to the circumscribed circle surrounding the resistance heating element exceeds 30%, a hot area having a high temperature appears in a part of the wafer, and the wafer The in-plane temperature difference was slightly large at 0.46 ° C.

  On the other hand, as shown in sample Nos. 61 to 66, the sample in which the ratio of the area occupied by the resistance heating element to the circumscribed circle of the resistance heating element is 5 to 30% has an in-plane temperature difference of the wafer. It could be as small as 0.32 ° C. or less and was excellent.

  Sample No. Like 62-65, the ratio of the area which a resistance heating element occupies with respect to the circumscribed circle of a resistance heating element shall be 10-25%, and the temperature difference in the surface of a wafer shall be less than 0.24 degreeC. In addition, sample no. Like 63 and 64, the ratio of the area occupied by the resistance heating element to the circumscribed circle of the resistance heating element is 15 to 20%, thereby reducing the temperature difference in the wafer surface to within 0.17 ° C. It was found to be particularly excellent.

It is sectional drawing which shows an example of the wafer heating apparatus of this invention. It is the schematic which shows the shape of the resistance heating element of this invention. (A) (b) is the schematic which shows the shape of the zone of this invention. It is the schematic which shows the shape of the resistance heating element of this invention. It is sectional drawing which shows an example of the conventional wafer heating apparatus. It is the schematic which shows the shape of the conventional resistance heating element. It is the schematic which shows the shape of the other conventional resistance heating element. It is the schematic which shows the shape of the other conventional resistance heating element. It is the schematic which shows the shape of the other conventional resistance heating element. It is the schematic which shows the shape of the other conventional resistance heating element. It is the schematic which shows the shape of the other conventional resistance heating element. It is the schematic which shows the shape of the other conventional resistance heating element.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1, 71: Wafer heating apparatus 2, 72: Plate-shaped body 3, 73: Heating surface 5, 75: Resistance heating element 6: Feeding part 8: Support pin 11, 77: Feeding terminal 12: Guide member 16: Bolt 17: Contact member 18: Elastic body 19, 79: Metal case 20: Nut 21: Bottom surface 23: Hole 24: Gas injection port 25: Wafer lift pin 26: Through hole 27: Thermocouple 28: Guide member W: Semiconductor wafer

Claims (10)

  1. One of the main surfaces of the plate-shaped body is a heating surface of the object to be heated, and the belt-shaped resistance heating element formed by routing the inside or the other main surface in an annular zone facing the heating surface, the plate-shaped body A heater comprising a temperature measuring element for measuring the temperature of the body or the object to be heated and a power feeding unit for heating the resistance heating element, wherein the temperature measuring element is in the zone, and the power feeding unit is in the zone. A heater characterized by being arranged in each other.
  2. The heater according to claim 1, wherein the resistance heating element is routed by a U-shaped pattern including a plurality of arc-shaped wiring portions and folded wiring portions.
  3. A plurality of the U-shaped patterns are arranged in a concentric ring shape, and the distance between the folded wiring portions of the pair of U-shaped patterns arranged on the same circle is shorter than the distance between the U-shaped patterns adjacent in the radial direction. The heater according to claim 2, wherein
  4. The distance between the folded wiring portions of the pair of U-shaped patterns arranged on the same circle among the plurality of U-shaped patterns is 30% to 80% of the distance between the U-shaped patterns adjacent in the radial direction. The heater according to claim 3.
  5. Each of the U-shaped patterns has an independent power feeding section so that it can be heated independently, and the distance between the U-pattern folded wiring sections adjacent to each other on the same circumference is between the adjacent U-shaped patterns in the radial direction. The heater according to claim 4, wherein the heater is smaller than the distance.
  6. 6. A wafer heating apparatus comprising a plurality of the concentric annular zones arranged in the heater of claim 1 and configured to contact a power supply terminal for supplying power to a power supply portion of each zone.
  7. The outer diameter D1 of the central zone is 23 to 33% of the outer diameter D of the outermost zone, and the outer diameter D2 of the outer zone D1 of the central zone is 45 to 45 of the outer diameter D. 7. The wafer heating apparatus according to claim 6, wherein the inner diameter D3 of the outer zone of the outer zone D1 of the central zone is 63 to 83% of the outer diameter D of the outermost zone. .
  8. The wafer heating apparatus according to any one of claims 6 to 7, further comprising a through-hole penetrating the plate-like body between the central zone and an outer zone.
  9. 9. The wafer heating apparatus according to claim 6, wherein a width of the outermost resistance heating element is smaller than a width of another zone inside thereof.
  10. 10. The wafer heating apparatus according to claim 1, wherein the ratio of the area of the resistance heating element in the circumscribed circle to the area of the outer peripheral circle surrounding the zone is 5 to 30%. .
JP2004313838A 2004-10-28 2004-10-28 Heater and wafer heating device Pending JP2006127883A (en)

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TW94133740A TWI281833B (en) 2004-10-28 2005-09-28 Heater, wafer heating apparatus and method for manufacturing heater
US11/238,641 US7417206B2 (en) 2004-10-28 2005-09-29 Heater, wafer heating apparatus and method for manufacturing heater
KR20050091400A KR100725123B1 (en) 2004-10-28 2005-09-29 Heater, apparatus for heating wafer and process for producing the heater

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JP2008192643A (en) * 2007-01-31 2008-08-21 Tokyo Electron Ltd Substrate treating equipment
JP2009238381A (en) * 2008-03-25 2009-10-15 Ulvac Japan Ltd Hot plate and processor using the same
JP2009272631A (en) * 2008-05-08 2009-11-19 Asml Netherlands Bv Lithography apparatus, and method
JP2010500762A (en) * 2006-08-07 2010-01-07 株式会社Sokudo Method and system for controlling critical dimensions in track lithography tools
JP2010080909A (en) * 2008-08-26 2010-04-08 Nuflare Technology Inc Heater, manufacturing apparatus for semiconductor device, and manufacturing method for semiconductor device
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JP2010500762A (en) * 2006-08-07 2010-01-07 株式会社Sokudo Method and system for controlling critical dimensions in track lithography tools
JP2008192643A (en) * 2007-01-31 2008-08-21 Tokyo Electron Ltd Substrate treating equipment
JP2009238381A (en) * 2008-03-25 2009-10-15 Ulvac Japan Ltd Hot plate and processor using the same
JP2009272631A (en) * 2008-05-08 2009-11-19 Asml Netherlands Bv Lithography apparatus, and method
US8564763B2 (en) 2008-05-08 2013-10-22 Asml Netherlands B.V. Lithographic apparatus and method
JP2010080909A (en) * 2008-08-26 2010-04-08 Nuflare Technology Inc Heater, manufacturing apparatus for semiconductor device, and manufacturing method for semiconductor device
JP2013251558A (en) * 2008-08-26 2013-12-12 Nuflare Technology Inc Semiconductor manufacturing device and semiconductor manufacturing method
US8610034B2 (en) 2008-08-26 2013-12-17 Nuflare Technology, Inc. Heater, manufacturing apparatus for semiconductor device, and manufacturing method for semiconductor device
JP2012064764A (en) * 2010-09-16 2012-03-29 Bridgestone Corp Heater unit and method of manufacturing semiconductor
JP2013016806A (en) * 2011-06-30 2013-01-24 Semes Co Ltd Substrate supporting unit and substrate treating apparatus including the same
JP2015516667A (en) * 2012-05-18 2015-06-11 株式会社 ケイエスエムコンポーネントKsm Component Co.,Ltd. Heat wire arrangement structure for ceramic heater
US10004113B2 (en) 2012-05-18 2018-06-19 Ksm Component Co., Ltd Heating wire arrangement for ceramic heater
JP2015018704A (en) * 2013-07-11 2015-01-29 日本碍子株式会社 Ceramic heater
JP2017010884A (en) * 2015-06-25 2017-01-12 京セラ株式会社 Sample holder
JPWO2017115758A1 (en) * 2015-12-28 2017-12-28 日本碍子株式会社 Disc heater and heater cooling plate assembly

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