JP3979737B2 - Electrical characteristic measuring apparatus and electrical characteristic measuring method - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to an apparatus for measuring electrical characteristics of a semiconductor element, and more particularly to the structure and measuring method of a measuring apparatus for measuring high breakdown voltage characteristics.
[0002]
[Prior art]
Conventionally, a structure as schematically shown in FIG. 6 is used as a measuring device for measuring electrical characteristics such as a drain withstand voltage, a junction withstand voltage, and an insulating film withstand voltage in a semiconductor element, for example, a high-voltage driven MOS transistor. Is used.
[0003]
The apparatus 100 having such a structure is called a prober, and a plurality of devices are brought into contact with a measurement table 110 (prober stage) on which a semiconductor element as a measurement sample 190 is placed and a measurement terminal (electrode) of the measurement sample 190 (semiconductor element). A probe fixing member 150 (probe card) for fixing the probe 130 (probe), an end portion 130b opposite to the contact end 130a of the probe 130, and supporting the probe fixing member 150 and externally. And a support member 170 (prober head) on which wiring for electrically connecting the measuring instrument and the probe is provided (FIG. 6). Although not shown, in addition to these, a housing for storing the above-described components and a transport system for transporting the semiconductor element to the prober stage are provided.
[0004]
After bringing the probe 130 into contact with the measurement terminal of the measurement sample 190, a desired voltage is applied from the probe 130 to the measurement sample 190, so that, for example, the drain breakdown voltage, the junction breakdown voltage, the insulation film breakdown voltage, etc. Measure electrical characteristics.
[0005]
[Problems to be solved by the invention]
However, in the measurement apparatus having such a configuration, when a high voltage measurement of about 1000 V is performed, the measurement is usually performed in an air atmosphere. For this reason, a leak current is generated from the electrode and the probe due to moisture and dust contained in the air, and it is difficult to perform accurate measurement.
[0006]
For this reason, it is conceivable to perform the measurement in an inert gas atmosphere that does not contain moisture and dust, does not contain a highly reactive substance, and has no problems such as corrosion. For example, the entire measuring device may be placed in an inert gas atmosphere. However, if it does in this way, measurement will take time, the apparatus itself will enlarge, and a lot of inert gas will be needed.
[0007]
Therefore, there has been a demand for the appearance of a more compact apparatus and measurement method that is an apparatus for measuring electrical characteristics that can perform stable measurement in an inert gas atmosphere speedily and inexpensively.
[0008]
[Means for Solving the Problems]
For this reason, according to the apparatus for measuring electrical characteristics of the present invention, the atmosphere in the space area where the probe is in contact with the semiconductor element, that is, the space surrounding at least the contact point between the measurement terminal of the semiconductor element and the probe. An inert gas ejection portion is provided for making the atmosphere of the region an inert gas atmosphere.
[0009]
According to the configuration of the present invention, the measurement atmosphere by the inert gas is formed in the peripheral space region at least surrounding the contact point between the measurement terminal of the semiconductor element and the probe. Of course, not only the space region in the vicinity of the contact point, but also the space region surrounding the entire measurement terminal and the probe may be an inert gas atmosphere.
[0010]
This inert gas is substantially free of moisture and dust, and even if these are included, it can be said that the amount is extremely small compared to air. Generation of leakage current caused by dust can be suppressed. Therefore, according to the apparatus of the present invention, it is possible to perform more accurate measurement than before. Moreover, since it is only necessary to attach an inert gas ejection part to the conventional measuring apparatus, it can be made a more compact apparatus. In addition, since only the space region in the vicinity of the measurement region of the semiconductor element has to be an inert gas atmosphere, a large amount of inert gas is not required. For this reason, the measurement of the electrical characteristics of the semiconductor element can be performed inexpensively and speedily.
[0011]
Further, the electrical characteristic measuring apparatus of the present invention includes a measuring table on which a semiconductor element is placed on the surface, a probe that comes into contact with a measuring terminal of the semiconductor element, and an end opposite to the contact end of the probe And a probe fixing member provided on the upper side of the measurement table and a support member for supporting the probe fixing member. The inert gas ejection part includes a gas supply pipe, a gas ejection nozzle, and a fixture for fixing the inert gas ejection part to the support member, and further between the gas ejection nozzle and the contact point. Comprises a gas flow path for sending an inert gas from the gas ejection nozzle to a space region surrounding the contact point.
[0012]
As a result, the inert gas ejected from the gas ejection nozzle passes through the gas flow path to the atmosphere in the region near the contact end of the probe, that is, the space region surrounding at least the contact point between the terminal and the probe. Or an inert gas containing no or substantially no dust. Therefore, even when a high voltage is applied from the probe to the measurement terminal of the semiconductor element, it is possible to suppress the occurrence of leakage current due to moisture and dust. Therefore, stable electrical characteristics can be measured.
[0013]
The gas flow path may pass through a hole that penetrates the probe fixing member from the support member side to the measurement table side.
[0014]
Thereby, the gas ejected from the gas ejection nozzle is introduced from the hole of the probe fixing member to the measurement table side, and the atmosphere in the space region surrounding the contact point can be changed to the measurement atmosphere by the inert gas.
[0015]
In addition, a gas flow path may be a gap or space that leads from the gas ejection nozzle to a space region surrounding the contact point between the measurement terminal of the semiconductor element and the probe and that is inevitably generated in the apparatus. it can.
[0016]
Preferably, the gas ejection nozzle has a hollow cylindrical or prismatic shape inside, and one end surface side is fixed to the support member by a fixture so as to communicate with the gas supply pipe. Good.
[0017]
The gas ejection nozzle is fixed to a support member that supports the probe fixing member by a fixture. For this reason, the apparatus for measuring electrical characteristics of the present invention having the gas ejection portion can be configured more compactly.
[0018]
Moreover, it is preferable that a gas ejection port is provided on the other end surface of the gas ejection nozzle opposite to the fixed side.
[0019]
Thus, the inert gas is ejected from the gas ejection port through the gas ejection nozzle from the gas supply pipe. In the case where a hole is formed in the probe fixing member, the gas ejection nozzle may be attached to the support member so as to be ejected toward the hole. In this way, at least the atmosphere in the space region near the contact point between the measurement terminal and the probe can be an inert gas atmosphere.
[0020]
Preferably, a plurality of gas jets are provided on the other end face and side face of the gas jet nozzle, and an inert gas is jetted from the gas jets.
[0021]
Thereby, the space area | region near the above-mentioned contact point can be formed as an area | region of an inert gas atmosphere over a wider range. Therefore, the electrical characteristics of the semiconductor element can be measured more stably.
[0022]
Preferably, the other end surface and the side surface of the gas ejection nozzle have a mesh structure, and the mesh structure has a gas ejection port.
[0023]
When measuring the electrical characteristics of the semiconductor element, a certain gas flow rate is required to form a preferable measurement gas atmosphere, and the momentum (gas flow rate) for ejecting the gas must be set as appropriate. If the gas flow rate is too slow, a gas flow rate sufficient to maintain this atmosphere cannot be ensured in the space region that becomes an inert gas atmosphere during measurement. However, if the momentum of the gas to be ejected is increased in order to secure the gas flow rate (the gas flow rate is increased), air containing moisture or dust that causes leakage current or other outside air other than inert gas is removed. There is a risk of getting caught in the jet gas. For this reason, if the other end surface and the side surface of the gas ejection nozzle have a mesh structure as described above, it is possible to secure a gas flow rate for forming a preferable measurement gas atmosphere of the ejected inert gas and to suppress the ejection momentum. it can. Thereby, an inert gas atmosphere can be formed by pushing away the atmosphere other than the inert gas in the space region near the contact point. Therefore, it can suppress that the external air containing a water | moisture content and dust is caught in the space area | region utilized for a measurement. Therefore, a wider area including the space surrounding the vicinity of the contact point can be made an inert gas atmosphere, and as a result, more stable measurement can be performed. In addition, it is thought that a higher effect will be acquired if the mesh structure is made finer.
[0024]
In the electrical characteristic measuring apparatus according to the present invention, wherein the probe fixing member is provided with a hole as a gas flow path, preferably the gas ejection region between the gas ejection nozzle and the hole of the probe fixing member. In addition, it is preferable that a buffer member for weakening the momentum of the ejected gas is provided on the probe fixing member.
[0025]
The inert gas ejected from the gas ejection nozzle once scatters by colliding with the buffer member, thereby suppressing the ejection momentum. For this reason, the entrainment of outside air into the space area near the contact point can be suppressed, and therefore the atmosphere in this space area can be formed as a stable measurement gas atmosphere.
[0026]
The buffer member may have any shape as long as it does not cover the upper side of the hole of the probe fixing member. This is for observing a semiconductor element as a measurement sample from above the hole using a microscope. Therefore, for example, the buffer member may have a plate shape, for example, and may be provided so that the gas to be ejected collides with the surface of the plate. Moreover, it is preferable that the plate-shaped buffer member is provided with a plurality of openings that penetrate from the front surface to the back surface. As a result, the inert gas which has collided with the buffer member and has become weak in momentum flows from the opening to the hole of the probe fixing member, and as a result, the vicinity of the measurement region of the semiconductor element becomes an inert gas atmosphere. .
[0027]
Moreover, the buffer member may have a cylindrical shape with both ends opened so as to surround the outside of the hole of the probe fixing member. Similarly to the plate-shaped buffer member described above, it is preferable that this cylinder is provided with a plurality of openings through which the gas to be ejected can pass. Further, the shape of the open end of the tube may be the same as that of the hole of the probe fixing member, or may be other shapes such as a rectangle as long as it is larger than this hole.
[0028]
In addition, in the plurality of openings provided in the buffer member, each opening prevents the gas to be ejected from passing through without colliding. For this reason, for example, an opening having a diameter of about 1 mm is 2 × 2 cm. ² It is preferable that about 50 pieces are provided on the plate with such a density that they are formed at equal intervals.
[0029]
Also, when measuring the electrical characteristics of this semiconductor element by contacting the probe to the measurement terminal of the semiconductor element, Inert gas is ejected from the gas ejection nozzle, and the moment of the inert gas ejected on the probe fixing member by the buffer member is made weaker than the moment of ejection, The measurement should be performed while exposing the measurement terminal and the probe to an inert gas atmosphere.
[0030]
This The inert gas ejected from the gas ejection nozzle once scatters by colliding with the buffer member, thereby suppressing the ejection momentum. For this reason, it is possible to suppress the inclusion of outside air in the space area near the contact point, and therefore, the atmosphere in this space area can be measured stably. Measurement can be performed in a gas atmosphere. For this reason, generation | occurrence | production of leak current can be suppressed and a stable measurement can be performed.
[0031]
In addition, as the inert gas, it is preferable to use one kind of gas selected from the group of inert gases of nitrogen gas, carbon dioxide gas, and rare gas, or a mixed gas in which two or more kinds of gases are mixed.
[0032]
For example, when two or more kinds of mixed gases are used, a wider range of atmospheres can be made an inert gas atmosphere by mixing two or more kinds of gases having different specific gravities. For this reason, more stable measurement can be expected.
[0033]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, an embodiment of the present invention will be described with reference to the drawings. Each drawing merely schematically shows the shape, size, and arrangement relationship of each component so that the invention can be understood. Therefore, the present invention is not limited to the illustrated examples.
[0034]
<First Embodiment>
As a first embodiment, a preferred example of an electrical characteristic measuring device according to the present invention will be described with reference to FIG. 1 and FIG. FIG. 1 (A) is a diagram schematically showing the structure of the main part of the apparatus for measuring electrical characteristics according to the present invention, and shows a cut section. FIG. 1B is a diagram schematically showing the structure of the end face for ejecting the gas of the gas ejection nozzle constituting the apparatus for measuring electrical characteristics. FIG. 2 is a schematic three-dimensional view of the probe fixing member for explaining the gas flow path of the electrical characteristic measuring apparatus of this embodiment.
[0035]
First, the structure of this apparatus will be described with reference to FIGS. 1 (A) and 1 (B).
[0036]
The electrical characteristic measuring apparatus 10 according to the present invention includes an inert gas ejection portion for making an atmosphere of a spatial region at least surrounding a contact point between a measurement terminal of a semiconductor element 19 as a measurement sample and a probe into an inert gas atmosphere. 21 is provided.
[0037]
The electrical characteristic measuring apparatus 10 includes a measuring table 11 on which a semiconductor element 19 is placed on the surface, a probe 13 that is in contact with a measurement terminal of the semiconductor element 19, and a contact end 13a of the probe 13 opposite to the contact end 13a. A probe fixing member 15 that fixes the end 13b and is provided on the upper side of the measurement table 11 and a support member 17 that supports the probe fixing member 15 are provided.
[0038]
The inert gas ejection part 21 includes a gas supply pipe 21 a, a gas ejection nozzle 21 b, and a fixture 21 c that fixes the inert gas ejection part 21 to the support member 17. Between the gas ejection nozzle 21b and the contact point between the measurement terminal and the probe 13, there is provided a gas flow path for sending an inert gas from the gas ejection nozzle 21b to a space region surrounding the contact point. . As the gas flow path, a gap or space that is inevitably formed due to the structure of the apparatus 10 is generally used. In addition, in this embodiment, as shown in FIG. 2, a hole 15x penetrating from the support member 17 side to the measurement table 11 side is formed as a gas flow path in the probe fixing member 15 (FIG. 2). That is, in this configuration example, the probe fixing member 15 is a donut-shaped or ring-shaped member. When this member 15 is attached to the support member 17, the measurement terminal of the semiconductor element 19 and the probe 13 are made visible from above through the hole 15x.
[0039]
In the configuration example described here, in order to efficiently test the electrical characteristics of the electronic circuit formed on the semiconductor wafer, the electrical characteristic measuring apparatus 10 is automatically provided with a probe called a probe on the electrode of each electronic circuit. A device called a prober that allows electrical testing of each electronic circuit by an external measuring instrument connected to the probe.
[0040]
As a result, the prober 10 includes a prober stage as the measurement table 11, a probe as the probe 13, a probe card as the probe fixing member 15, and a prober head as the support member 17 (FIG. 1 (A)).
[0041]
The probe card 15 is formed with a hole 15x having a size such that a measurement region including at least a measurement terminal of the semiconductor element 19 can be seen from above. This hole 15x becomes the main gas flow path, and the inert gas ejected from the gas ejection nozzle flows from the prober head 17 side to the prober stage 11 side as shown by the arrows in the figure (FIG. 2). ).
[0042]
The semiconductor element 19 measured in this embodiment is, for example, 2000 × 300 μm ² A high-voltage driving MOS transistor having a driving voltage of 900 V formed on a semiconductor wafer is a large transistor of about the size. And the measurement area to measure at once is 4x4mm ² About the size. In FIG. 1, only two probes 13 brought into contact with two measurement terminals of one semiconductor element 19 are shown for easy understanding of the drawing. However, as is well known, actually, 40 to 50 probes are provided, and these probes individually contact the corresponding measurement terminals of each element of the element group to be measured (TEG: Test element group). ing. In this embodiment, the hole 15x formed in the probe card 15 is, for example, a circular one having a diameter of 1 cm (FIG. 2).
[0043]
Further, the inert gas ejection portion 21 is fixed to the upper side of the prober head 17 by a fixture 21c. By this fixture 21c, the gas supply pipe 21a and the gas ejection nozzle 21b are joined and communicated, and gas is supplied from the gas supply pipe 21a to the gas ejection nozzle 21b. In this case, for example, the gas ejection nozzle 21b here has a hollow cylindrical shape inside, and the one end surface 21bx side of the nozzle 21b is fixed to the gas supply pipe 21a by the fixture 21c. And as shown to FIG. 1 (B), the gas ejection port 23 is provided in the approximate center of the other end surface 21by of the nozzle 21b. In this example, for example, the diameter l of the gas ejection port 23 is 5 mm, and the diameter L of the end face 21by where the gas ejection port 23 of the gas ejection nozzle 21b is provided is 20 mm (FIG. 1B). In addition, the gas ejection nozzle 21b is configured so that the inert gas ejected from the gas ejection port 23 has a hole 15x provided in the probe card 15 as a gas flow path, and the measurement terminal of the semiconductor element 19 passes through the hole 15x. It is fixed at a position where it is introduced into a space region including a contact point with the probe 13 (probe) (FIG. 1A).
[0044]
For this reason, the inert gas 25 ejected from the gas ejection nozzle 21b is introduced from the hole 15x of the probe card 15 to the prober stage 11 side, and in the space region in the vicinity of the probe 13 in contact with the semiconductor element 19. The atmosphere is an inert gas atmosphere.
[0045]
Next, the electrical characteristics of the semiconductor element 19 are measured using the electrical characteristics measuring apparatus 10 of this embodiment.
[0046]
In this example, for example, a high voltage driving MOS transistor having a driving voltage of about 900 V is used as the semiconductor element as the measurement sample 19.
[0047]
A measurement sample 19 is placed on the prober stage 11 and fixed with a vacuum chuck. Next, the contact end 13a of the probe 13 is brought into contact with the three terminals of the drain electrode, the gate electrode, and the source electrode of the measurement sample 19, respectively. A voltage of 0 V is applied to the gate electrode and the source electrode. And it is made to apply to a drain electrode so that it may become a high voltage gradually in the voltage range from 0V to 1000V. A voltage applied to the drain electrode when a current of 100 μA flows between the drain electrode and the source electrode is defined as a drain breakdown voltage.
[0048]
During this series of measurement operations, the inert gas 25 is ejected from the gas ejection nozzle 21b, and the surrounding atmosphere including at least the contact point between the measurement terminal and the probe is made the inert gas atmosphere. In this example, for example, nitrogen gas is used as the inert gas 25.
[0049]
As a result, an inert gas measurement atmosphere is formed in the vicinity where the semiconductor element 19 and the probe 13 are in contact with each other. Therefore, when a high voltage of about 900 V is applied to the semiconductor element 19 to check the electrical characteristics, it is possible to prevent moisture and dust that cause a leak current from entering the measurement atmosphere. Therefore, stable measurement is possible.
[0050]
In addition, the measurement apparatus 10 of this embodiment has a compact structure because only the gas ejection part 21 is installed in the conventional apparatus. Further, with this apparatus 10, since only the atmosphere around the contact point can be made an inert gas atmosphere, a large amount of inert gas is not required. Therefore, measurement can be performed inexpensively and speedily.
[0051]
Further, in this embodiment, the gas ejection port 23 is provided at the approximate center of the end surface 21by of the gas ejection nozzle 21b from which the inert gas 25 is ejected. However, the present invention is not limited to this, for example, on the end surface of the gas ejection nozzle. Many gas outlets may be provided. For example, the end surface may have a network structure over the entire surface. In this case, each mesh is a gas outlet.
[0052]
In this embodiment, a donut-shaped probe fixing member 15 (probe card) having a hole 15x formed at the center is used, and the hole 15x is a gas flow path. For example, as long as the probe 13 (probe) can be fixed, the probe fixing member 16 shown in FIG. 3 may be used. FIG. 3 shows an applicable example of the shape of the probe fixing member of the apparatus for measuring electrical characteristics according to the present invention. FIG. 3 is a schematic perspective view. The probe fixing member 16 includes a first member 16a and a second member 16b. If such a probe fixing member 16 is used, a gas flow path that leads from the gas ejection nozzle to a space region near the contact point between the measurement terminal of the semiconductor element and the probe can be secured without providing a hole. . And as shown by the arrow in a figure, the inert gas ejected from a gas ejection nozzle flows into the space area | region around a contact point (FIG. 3).
[0053]
<Second Embodiment>
As a second embodiment, an example in which the shape of the gas ejection nozzle of the gas ejection section is different from that of the first embodiment will be described with reference to FIG. FIG. 4A is a diagram schematically showing the structure of the main part of the electrical characteristic measuring apparatus according to the second embodiment, and shows a cross-section cut. FIG. 4B is a perspective view schematically showing the structure of the gas ejection nozzle that constitutes the electrical characteristic measuring device of this embodiment.
[0054]
Hereinafter, differences from the first embodiment will be described, and detailed description of points similar to those of the first embodiment will be omitted.
[0055]
The prober, which is the electrical characteristic measuring device 30 of this embodiment, includes an inert gas ejection part 31 as in the device of the first embodiment. And the structure of this apparatus 30 is the prober 13 which contacts the prober stage which is the measurement stand 11 which mounts the semiconductor element 19 on the surface, and the measurement terminal of the semiconductor element 19 similarly to 1st Embodiment. A probe card, which is a probe fixing member 15 provided to fix the probe and the end 13b opposite to the contact end 13a of the probe 13 and to cover the semiconductor element 19 on the upper side of the prober stage 11; A prober head which is a support member 17 for supporting the probe card 15 is provided. The probe card 15 is formed with a hole 15x through which a measurement region including a measurement terminal of the semiconductor element 19 on the prober stage 11 is exposed. Further, the prober head 17 is provided with a gas ejection part 31 comprising a gas supply pipe 31a, a hollow cylindrical gas ejection nozzle 31b, and a fixture 31c. The gas supply pipe 31a and the one end surface 31bx side of the gas ejection nozzle 31b are joined by the fixture 31c, and the gas ejection nozzle 3 The gas ejected from 1b is fixed to the prober head 17 so as to be introduced into the hole 15x of the probe card 15 which is a gas flow path (FIG. 4A). The other end surface 31by and the side surface 31bz of the gas ejection nozzle 31b have a mesh structure. And this mesh is the gas outlet 33 (FIG. 4B).
[0056]
Thereby, the inert gas 25 ejected from the gas ejection nozzle 31b of the apparatus 30 of this embodiment is introduced from the hole 15x of the probe card 15 to the prober stage 11 side, so that the semiconductor element 19 of the probe 13 is provided. The space area in the vicinity of the contact with the gas can be made an inert gas atmosphere. Further, since a large number of gas ejection ports 33 are formed on the other end surface 31by and the side surface 31bz of the gas ejection nozzle 31b, a wider area can be made an inert gas atmosphere. Further, since the gas ejection nozzle 31b has a mesh structure, the gas flow rate for making the atmosphere in the space region surrounding the contact point between the measurement terminal of the semiconductor element and the probe into an inert gas atmosphere during measurement is set. It is not necessary to spout and maintain the gas at such a moment as to involve outside air. Therefore, it is possible to avoid the possibility that the outside air containing moisture and dust is caught in the inert gas atmosphere by the momentum of gas ejection.
[0057]
Therefore, moisture and dust that cause leakage current in the measurement atmosphere can be reduced, and the electrical characteristics of the semiconductor element can be measured more stably.
[0058]
Moreover, although the gas ejection nozzle of this embodiment was cylindrical, the shape is not limited to this. For example, the tip portion of the nozzle may have a hemispherical shape, and a number of gas jets may be formed on this surface.
[0059]
Further, the probe fixing member of this embodiment is not limited to the donut-shaped member having the hole 15x formed at the center, and may be the probe fixing member 16 having a shape as shown in FIG. .
[0060]
<Third Embodiment>
As a third embodiment, referring to FIG. 5, it is a gas ejection region between the gas ejection nozzle and the hole of the probe fixing member, and shows the momentum of the gas ejected on the probe fixing member. An example in which a buffer member for weakening is provided will be described. FIG. 5 (A) is a diagram schematically showing the structure of the main part of the electrical characteristic measuring apparatus of this embodiment, and shows a cut section. FIG. 5B is a schematic perspective view of the buffer member.
[0061]
Hereinafter, differences from the first and second embodiments will be described, and detailed descriptions of similar points will be omitted.
[0062]
The prober which is the electrical characteristic measuring device 40 of this embodiment includes an inert gas ejection portion 21 similar to that of the device of the first embodiment. And the structure of the apparatus 40 is the prober 13 which contacts the prober stage which is the measurement stand 11 which mounts the semiconductor element 19 on the surface, and the measurement terminal of the semiconductor element 19 similarly to 1st Embodiment. A probe card, which is a probe fixing member 15 provided to fix the probe and the end 13b opposite to the contact end 13a of the probe 13 and to cover the semiconductor element 19 on the upper side of the prober stage 11; A prober head which is a support member 17 for supporting the probe card 15 is provided. The probe card 15 has a hole 15x in which a measurement region including a measurement terminal of the semiconductor element 19 on the prober stage 11 can be seen from above. This hole 15x becomes a gas flow path. Further, the prober head 17 is provided with a gas ejection portion 21 including a gas supply pipe 21a, a gas ejection nozzle 21b having a hollow inside and a columnar shape, and a fixture 21c. The prober head 17 is configured such that the gas supply pipe 21a and the one end surface 21bx side of the gas ejection nozzle 21b are joined by the fixture 21c, and the gas ejected from the gas ejection nozzle 21b is introduced into the hole 15x of the probe card 15. It is fixed to. The other end surface 21by is provided with a gas outlet 23 as in the first embodiment (FIG. 5A).
[0063]
Further, in this embodiment, a buffer member 41 for reducing the momentum of the inert gas 25 ejected from the gas ejection nozzle 21b is provided.
[0064]
In this embodiment, as the buffer member 41, a cylindrical member having both ends (41a and 41b) opened so as to surround the hole 15x of the probe card 15 is provided on the probe card 15. Good. The open end 41 a of the tubular member 41 is in contact with the probe card 15. Moreover, the shape of the open ends (41a and 41b) is a quadrangle in this example. Here, a square cylindrical member 41 is formed by combining a plate having a horizontal width of 2 cm and a vertical width of 2 cm with about four plate-like members 45 that are uniformly formed with about 50 openings 43 having a diameter of 1 mm. (FIG. 5B). The material of the plate member 45 constituting the cylindrical member 41 is, for example, plastic. When the inert gas 25 is ejected from the gas ejection nozzle 21b, the inert gas 25 once collides with the cylindrical member 41 before entering the hole 15x of the probe card 15. As a result, the momentum of the inert gas 25 ejected can be suppressed. Then, an inert gas is introduced into the hole 15 x of the probe card 15 through the plurality of openings 43 formed in the cylindrical member 41. Thereby, the area | region of the probe 13 near the semiconductor element 19 can be made into inert gas atmosphere.
[0065]
Using the electrical characteristic measuring apparatus 40 of this embodiment, the electrical characteristics of the semiconductor element 19 having a drive voltage of about 900 V are measured in the same manner as in the first embodiment. The inert gas 25 ejected from the gas ejection nozzle 21b is, for example, nitrogen gas.
[0066]
As a result, a measurement atmosphere by nitrogen gas is formed in a space region around the contact point where the semiconductor element 19 and the probe 13 contact. During the measurement, the nitrogen gas ejected from the gas ejection nozzle 21b must be ejected at a certain flow rate so that the space area around the contact point becomes a measurement atmosphere by nitrogen gas. If the gas flow rate is too high, the outside air containing moisture and dust may be entrained in the measurement atmosphere. In this embodiment, the nitrogen gas 25 ejected from the gas ejection nozzle 21b once enters the buffer member 41. The momentum of ejection can be suppressed by colliding and scattering. The buffer member 41 is provided with a plurality of openings 43, and the nitrogen gas 25 is introduced into the holes 15 x of the probe card 15 through the openings 43. Thereby, the area | region of the vicinity where the semiconductor element 19 and the probe 13 contact can be made into the stable nitrogen gas atmosphere. Therefore, even if a high voltage is applied to the probe 13 that is in contact with the semiconductor element 19, the occurrence of leakage current can be suppressed. For this reason, stable measurement is possible.
[0067]
Further, the measurement device 40 of this embodiment is compact because only the gas ejection part 21 and the buffer member 41 are installed in the conventional device. Further, with this apparatus 40, since only the atmosphere in the space region surrounding the contact point between the measurement terminal of the semiconductor element and the probe 13 can be made an inert gas atmosphere, a large amount of inert gas is required. do not do. Therefore, measurement can be performed inexpensively and speedily.
[0068]
Further, in this embodiment, a cylindrical member having a square end surface opened as the buffer member is used. However, the present invention is not limited to this, and a cylindrical member having both ends opened may be used. In addition, it is a member that can weaken the momentum of the inert gas and introduce the inert gas into the hole of the probe card between the gas ejection nozzle and the hole without blocking the upper side of the hole of the probe card. Any shape may be used. For example, a plate-like member having a plurality of openings may be used. For example, this plate-shaped member is installed at a position that shields the inert gas that is ejected. Thereby, the ejected inert gas collides and scatters on the plate-like member, and then is introduced into the hole of the probe card from the opening. Therefore, the space region around the contact point between the measurement terminal of the semiconductor element and the probe can be set to a preferable inert gas atmosphere.
[0069]
Further, in the first, second and third embodiments, nitrogen gas is used as an inert gas ejected from the gas ejection nozzle. ₂ Other inert gases such as gas may be used, or a mixed gas thereof may be used.
[0070]
In the above-described embodiment, two examples of the probe are given. However, the number of probes is not limited to this, and the number of probes can be provided as necessary.
[0071]
In these embodiments, a high voltage driving MOS transistor having a driving voltage of 900 V is measured. However, the present invention is not limited to this, and other electrical characteristics such as junction withstand voltage and insulation film withstand voltage of other semiconductor elements are used. May be measured.
[0072]
Further, the semiconductor element measured using the electrical characteristic measuring apparatus of the present invention is not limited to an element driven at a high voltage, and the same effect can be obtained even when the driving voltage is 700 V or less.
[0073]
【The invention's effect】
As is apparent from the above description, according to the apparatus for measuring electrical characteristics of the present invention, the atmosphere in the space region at least surrounding the contact point between the measurement terminal of the semiconductor element and the probe is made an inert gas atmosphere. It has an inert gas spout.
[0074]
Thereby, since the measurement atmosphere by an inert gas is formed in the space area | region around a contact point, generation | occurrence | production of the leakage current resulting from the water | moisture content and dust in a measurement atmosphere can be suppressed. Accordingly, accurate measurement can be performed. Moreover, since it is only necessary to attach an inert gas ejection part to a conventional measuring apparatus, a more compact apparatus structure can be achieved. In addition, since a large amount of inert gas is not required, the measurement of the electrical characteristics of the semiconductor element can be performed inexpensively and speedily.
[Brief description of the drawings]
FIG. 1A is a cross-sectional view schematically showing a structure of a main part of an electrical characteristic measuring apparatus according to a first embodiment, and FIG. 1B is a structure of an end face of a gas ejection nozzle. FIG.
FIG. 2 is a three-dimensional view for explaining the shape of a probe fixing member that constitutes the electrical characteristic measuring apparatus according to the first embodiment;
FIG. 3 is a schematic perspective view showing one application example of a probe fixing member.
4A is a cross-sectional view schematically showing a partial structure of an electrical characteristic measuring apparatus according to a second embodiment, and FIG. 4B is a perspective view of a gas ejection nozzle. .
5A is a cross-sectional view schematically showing a partial structure of an electrical characteristic measuring apparatus according to a third embodiment, and FIG. 5B is a schematic perspective view of a buffer member. FIG.
FIG. 6 is a schematic view showing a partial structure of a conventional device for measuring electrical characteristics.
[Explanation of symbols]
10, 30, 40, 100: Electrical characteristic measuring device (prober)
11, 110: Measuring table (prober stage)
13, 130: Probe (probe)
13a, 130a: contact end
13b, 130b: opposite end
15, 16, 150: Probe fixing member (probe card)
15x: hole (gas flow path)
16a: 1st member
16b: second member
17, 170: Support member (prober head)
19, 190: Semiconductor element (high voltage drive MOS transistor, measurement sample)
21, 31: Inert gas ejection part
21a, 31a: Gas supply pipe
21b, 31b: Gas ejection nozzle
21bx, 31bx: one end surface
21by, 31by: other end surface
21c, 31c: Fixing tool
23, 33: Gas outlet
25: Inert gas (nitrogen gas)
31bz: Side
41: Buffer member (tubular member)
41a: one end
41b: end
43: Opening
45: Plate-shaped member

Claims (7)

In an electrical characteristic measuring apparatus for measuring electrical characteristics of a semiconductor element by bringing a probe into contact with a measurement terminal of the semiconductor element,
An inert gas ejection portion for making an atmosphere of a space region at least surrounding a contact point between the measurement terminal and the probe into an inert gas atmosphere ;
A measuring table for mounting the semiconductor element on the surface, a probe to be in contact with the measuring terminal of the semiconductor element, an end opposite to the contact end of the probe is fixed, and the upper side of the measuring table A probe fixing member provided, and a support member for supporting the probe fixing member;
The inert gas ejection part comprises a gas supply pipe, a gas ejection nozzle, and a fixture for fixing the inert gas ejection part to the support member,
Between the gas ejection nozzle and the contact point, comprising a gas flow path for sending the inert gas from the gas ejection nozzle to a space region surrounding the contact point,
The gas ejection nozzle has a hollow cylindrical or prismatic shape inside, and one end surface side of the gas ejection nozzle is fixed to the support member so as to communicate with the gas supply pipe by the fixture,
An apparatus for measuring electrical characteristics, wherein a plurality of gas ejection ports are provided on the other end surface and side surface of the gas ejection nozzle . The apparatus for measuring electrical characteristics according to claim 1 ,
The apparatus for measuring electrical characteristics, wherein the gas flow path passes through a hole penetrating the probe fixing member from the support member side to the measurement table side. The apparatus for measuring electrical characteristics according to claim 1 or 2 ,
An apparatus for measuring electrical characteristics, wherein a gas jet outlet is provided on the other end face of the gas jet nozzle. The apparatus for measuring electrical characteristics according to claim 1 or 2 ,
An apparatus for measuring electrical characteristics, wherein the other end surface and the side surface of the gas ejection nozzle have a mesh structure, and the mesh structure is a gas ejection port. In the apparatus for measuring electrical characteristics according to any one of claims 2 to 4 ,
A gas ejection region between the gas ejection nozzle and the hole of the probe fixing member, and a buffer member for weakening the force of the ejected gas is provided on the probe fixing member. A device for measuring electrical characteristics. In measuring the electrical characteristics of the semiconductor element by bringing the probe into contact with the measurement terminal of the semiconductor element,
An inert gas is ejected from the gas ejection nozzle, and the moment of the inert gas ejected onto the probe fixing member by the buffer member is made weaker than the moment of ejection, and the measurement terminal and the probe are moved to the inert gas. An electrical property measuring method, wherein the measurement is performed while exposed to an active gas atmosphere. In the electrical property measuring method according to claim 6 ,
A method for measuring electrical characteristics, wherein the inert gas is one kind of gas selected from an inert gas group of nitrogen gas, carbon dioxide gas, and rare gas, or a mixed gas of two or more kinds.

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