JP3977572B2 - 接着型半導体基板および半導体発光素子並びにこれらの製造方法 - Google Patents

接着型半導体基板および半導体発光素子並びにこれらの製造方法 Download PDF

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Publication number
JP3977572B2
JP3977572B2 JP2000089754A JP2000089754A JP3977572B2 JP 3977572 B2 JP3977572 B2 JP 3977572B2 JP 2000089754 A JP2000089754 A JP 2000089754A JP 2000089754 A JP2000089754 A JP 2000089754A JP 3977572 B2 JP3977572 B2 JP 3977572B2
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JP
Japan
Prior art keywords
layer
substrate
semiconductor substrate
wafer
epitaxial growth
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
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JP2000089754A
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English (en)
Japanese (ja)
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JP2001057441A5 (enExample
JP2001057441A (ja
Inventor
川 和 由 古
池 康 彦 赤
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Toshiba Corp
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Toshiba Corp
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Priority to JP2000089754A priority Critical patent/JP3977572B2/ja
Priority to US09/589,452 priority patent/US6465809B1/en
Priority to DE60042187T priority patent/DE60042187D1/de
Priority to TW089111181A priority patent/TW502458B/zh
Priority to EP00304862A priority patent/EP1065734B1/en
Publication of JP2001057441A publication Critical patent/JP2001057441A/ja
Priority to US10/211,707 priority patent/US6815312B2/en
Priority to US10/961,066 priority patent/US7217635B2/en
Publication of JP2001057441A5 publication Critical patent/JP2001057441A5/ja
Priority to US11/621,638 priority patent/US7364982B2/en
Application granted granted Critical
Publication of JP3977572B2 publication Critical patent/JP3977572B2/ja
Priority to US12/042,561 priority patent/US20080308827A1/en
Priority to US13/595,284 priority patent/US8829488B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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JP2000089754A 1999-06-09 2000-03-28 接着型半導体基板および半導体発光素子並びにこれらの製造方法 Expired - Lifetime JP3977572B2 (ja)

Priority Applications (10)

Application Number Priority Date Filing Date Title
JP2000089754A JP3977572B2 (ja) 1999-06-09 2000-03-28 接着型半導体基板および半導体発光素子並びにこれらの製造方法
DE60042187T DE60042187D1 (de) 1999-06-09 2000-06-08 Bond-typ Halbleitersubstrat, lichtemittierendes Halbleiterbauelement und Herstellungsverfahren
TW089111181A TW502458B (en) 1999-06-09 2000-06-08 Bonding type semiconductor substrate, semiconductor light emission element and manufacturing method thereof
EP00304862A EP1065734B1 (en) 1999-06-09 2000-06-08 Bonding type semiconductor substrate, semiconductor light emitting element, and preparation process thereof.
US09/589,452 US6465809B1 (en) 1999-06-09 2000-06-08 Bonding type semiconductor substrate, semiconductor light emitting element, and preparation process thereof
US10/211,707 US6815312B2 (en) 1999-06-09 2002-08-05 Bonding type semiconductor substrate, semiconductor light emitting element, and preparation process thereof
US10/961,066 US7217635B2 (en) 1999-06-09 2004-10-12 Process for preparing a bonding type semiconductor substrate
US11/621,638 US7364982B2 (en) 1999-06-09 2007-01-10 Process for preparing a bonding type semiconductor substrate
US12/042,561 US20080308827A1 (en) 1999-06-09 2008-03-05 Process for preparing a bonding type semiconductor substrate
US13/595,284 US8829488B2 (en) 1999-06-09 2012-08-27 Process for preparing a bonding type semiconductor substrate

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP11-162985 1999-06-09
JP16298599 1999-06-09
JP2000089754A JP3977572B2 (ja) 1999-06-09 2000-03-28 接着型半導体基板および半導体発光素子並びにこれらの製造方法

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2007135855A Division JP4183731B2 (ja) 1999-06-09 2007-05-22 接着型半導体基板および半導体発光素子
JP2007135843A Division JP2007214597A (ja) 1999-06-09 2007-05-22 半導体発光素子

Publications (3)

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JP2001057441A JP2001057441A (ja) 2001-02-27
JP2001057441A5 JP2001057441A5 (enExample) 2005-06-16
JP3977572B2 true JP3977572B2 (ja) 2007-09-19

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JP2000089754A Expired - Lifetime JP3977572B2 (ja) 1999-06-09 2000-03-28 接着型半導体基板および半導体発光素子並びにこれらの製造方法

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008252151A (ja) * 1999-06-09 2008-10-16 Toshiba Corp 半導体発光素子の製造方法

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002359399A (ja) * 2001-05-31 2002-12-13 Shin Etsu Handotai Co Ltd 発光素子の製造方法及び発光素子
JP3705791B2 (ja) 2002-03-14 2005-10-12 株式会社東芝 半導体発光素子および半導体発光装置
JP4116387B2 (ja) * 2002-09-30 2008-07-09 株式会社東芝 半導体発光素子
JP3737494B2 (ja) 2003-06-10 2006-01-18 株式会社東芝 半導体発光素子及びその製造方法並びに半導体発光装置
WO2005013365A2 (en) 2003-07-30 2005-02-10 Matsushita Electric Industrial Co., Ltd. Semiconductor light emitting device, light emitting module, and lighting apparatus
JP4899348B2 (ja) * 2005-05-31 2012-03-21 信越半導体株式会社 発光素子の製造方法
JP4584785B2 (ja) 2005-06-30 2010-11-24 シャープ株式会社 半導体発光素子の製造方法
JP4918245B2 (ja) * 2005-10-14 2012-04-18 昭和電工株式会社 発光ダイオード及びその製造方法
JP4913415B2 (ja) * 2006-01-23 2012-04-11 昭和電工株式会社 発光ダイオード及びその製造方法
US7863630B2 (en) 2005-07-05 2011-01-04 Showa Denko K.K. Light-emitting diode and method for fabrication thereof
JP4225510B2 (ja) 2005-07-06 2009-02-18 昭和電工株式会社 化合物半導体発光ダイオードおよびその製造方法
WO2007083829A1 (en) 2006-01-23 2007-07-26 Showa Denko K.K. Light-emitting diode and method for fabrication thereof
US8269236B2 (en) 2006-02-08 2012-09-18 Showa Denko K.K. Light-emitting diode and fabrication method thereof
US8097892B2 (en) 2006-02-14 2012-01-17 Showa Denko K.K. Light-emitting diode
TWI394294B (zh) * 2007-01-26 2013-04-21 Shinetsu Handotai Kk Light emitting element and manufacturing method thereof
JP4892445B2 (ja) 2007-10-01 2012-03-07 昭和電工株式会社 半導体発光素子および半導体発光素子の製造方法
JP5315070B2 (ja) * 2008-02-07 2013-10-16 昭和電工株式会社 化合物半導体発光ダイオード
JP2010098068A (ja) * 2008-10-15 2010-04-30 Showa Denko Kk 発光ダイオード及びその製造方法、並びにランプ
JP2010192701A (ja) 2009-02-18 2010-09-02 Showa Denko Kk 発光ダイオード、発光ダイオードランプ及び発光ダイオードの製造方法
JP5957358B2 (ja) 2012-10-16 2016-07-27 昭和電工株式会社 発光ダイオード、発光ダイオードランプ及び照明装置
JP6633881B2 (ja) * 2015-09-30 2020-01-22 ローム株式会社 Ｌｅｄ照明器具およびその製造方法
DE102015121056A1 (de) * 2015-12-03 2017-06-08 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung einer Mehrzahl von Bauelementen und Bauelement
JP7306736B2 (ja) * 2021-04-21 2023-07-11 ナシモト工業株式会社 切断用板、耕うん用板などの作業用板の製造方法
JP7711612B2 (ja) * 2022-03-15 2025-07-23 信越半導体株式会社 接合型ウェーハの製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008252151A (ja) * 1999-06-09 2008-10-16 Toshiba Corp 半導体発光素子の製造方法

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