JP3962414B2 - Wafer batch inspection apparatus and manufacturing method of inspection substrate used therefor - Google Patents

Description

  The present invention relates to a wafer collective inspection apparatus that collectively inspects a plurality of semiconductor elements formed on a semiconductor wafer in a wafer state and a method of manufacturing an inspection substrate used therefor.

  2. Description of the Related Art In recent years, electronic devices equipped with semiconductor integrated circuit devices (hereinafter referred to as “semiconductor devices”) have made remarkable progress in downsizing and cost reduction. Accordingly, there is a strong demand for downsizing and cost reduction of semiconductor devices. It has become.

  Usually, a semiconductor device is supplied after a semiconductor element chip (semiconductor chip) and a lead frame are electrically connected by a bonding wire and then the semiconductor chip and the lead frame are sealed with resin or ceramics, and printed. Mounted on the board. However, due to the demand for miniaturization of electronic equipment, a method of directly mounting a semiconductor chip that has been cut out from a semiconductor wafer, a so-called bare chip, on a circuit board has been developed, and quality is guaranteed to support this mounting method. It is desired to supply the bare chip at a low price.

  In order to guarantee the quality of the bare chip, it is necessary to inspect a plurality of semiconductor elements formed on the semiconductor wafer such as burn-in at the wafer level. However, since it takes a lot of time to inspect a plurality of semiconductor elements on a semiconductor wafer one by one or several times, it is not realistic in terms of time and cost. Therefore, it is required to perform an inspection such as burn-in on all the semiconductor elements on the semiconductor wafer at the wafer level.

  In order to collectively inspect a plurality of semiconductor elements at the wafer level, a power supply voltage and a signal are simultaneously applied to a plurality of inspection electrodes provided on the plurality of semiconductor elements formed on the semiconductor wafer. It is necessary to operate the semiconductor element. Therefore, it is necessary to prepare an inspection board having a very large number (usually several thousand or more) of inspection terminals. However, the conventional needle type inspection board has both the number of pins and the price. I can not cope.

  Therefore, a wafer batch inspection apparatus has been proposed that can simultaneously contact a plurality of inspection terminals formed of bumps with a plurality of inspection electrodes provided on a plurality of semiconductor chips on a semiconductor wafer (for example, patents). See reference 1.)

  A conventional wafer batch inspection apparatus will be described below with reference to the cross-sectional view of FIG. 9 shows a cross section of a conventional wafer batch inspection apparatus, FIG. 9 (a) shows the entire wafer batch inspection apparatus, and FIG. 9 (b) enlarges the area A in FIG. 9 (a). It shows.

  As shown in FIG. 9, a semiconductor wafer 112 in which a plurality of semiconductor elements are formed for each chip formation region is held on the wafer holding portion 117 of the wafer tray 111, and the main surface (upper surface) of the semiconductor wafer 112. A plurality of inspection electrodes 113 electrically connected to the respective semiconductor elements are formed on the substrate.

  The inspection substrate 120 is arranged to face the wafer tray 111 so as to sandwich the semiconductor wafer 112 held on the wafer tray 111. A plurality of inspection terminals 118 formed on the surface of the inspection substrate 120 facing the semiconductor wafer 112 are in pressure contact with the corresponding inspection electrodes 113, and the characteristics of each semiconductor element can be inspected collectively. it can.

  The inspection substrate 120 includes a wiring substrate 121 provided with a substrate electrode 126 serving as a base portion of the inspection terminal 118, a bump-attached sheet 141 provided with a bump terminal 143 serving as a tip portion of the inspection terminal 118, and a wiring substrate. 121 and an anisotropic conductive elastic sheet 131 provided with a conductor 133 disposed between the bumped sheet 141 and the substrate electrode 126 and the bump terminal 143.

  The bumped sheet 141 includes an insulating film 142 made of polyimide with an outer peripheral portion fixed by a rigid ring 145, a plurality of hemispherical bump terminals 143 formed on one surface of the insulating film 142, and an insulating film. 142 includes a plurality of connection terminals 144 formed on the surface opposite to the bump terminals 143 and electrically connected to the bump terminals 143.

  The wiring substrate 121 is provided with substrate electrodes 126 at positions corresponding to the connection terminals 144 of the bumped sheet 141, and each substrate electrode 126 is electrically connected to the multilayer wiring composed of the upper layer wiring 124 and the lower layer wiring 122. Connected. A lower layer insulating film 123 is formed as an interlayer insulating film between the lower layer wiring 122 and the upper layer wiring 124, and an upper layer insulating film 125 is formed as an interlayer insulating film on the upper layer wiring 124.

  The anisotropic conductive elastic sheet 131 is made of an elastic member 132 such as silicon rubber, and is disposed between the wiring board 121 and the bumped sheet 141. A conductor 133 made of a plurality of conductive particles connected in a chain shape in the thickness direction of the anisotropic conductive elastic sheet 131 is embedded in a portion of the anisotropic conductive elastic sheet 131 facing the connection terminal 144 of the bumped sheet 141. The board electrode 126 of the wiring board 121 and the connection terminal 144 of the bumped sheet 141 are electrically connected by a conductor 133.

  Further, a projecting portion is formed in a portion of the anisotropic conductive elastic sheet 131 facing the connection terminal 144 of the bumped sheet 141, and when a pressing force is applied to bring the wiring board 121 and the bumped sheet 141 close to each other, Since the bump terminal 143 of the attached sheet 141 is pressed toward the inspection electrode 113 of the semiconductor wafer 112 by the elastic force of the protruding portion, even if the semiconductor wafer 112 has a stepped portion or warps, The inspection terminal 118 and the inspection electrode 113 can be reliably contacted over the entire surface of the semiconductor wafer 112.

  The following method is used to press the inspection terminal 118 of the inspection substrate 120 against the inspection electrode 113.

  Around the wafer tray 111, an annular seal member 114 made of an elastic body having a lip-shaped cross section is provided so as to surround the wafer holding portion 117. An annular pressure-reducing concave groove 115 is formed between the wafer tray 111 and the seal member 114. A channel opening / closing valve 116 is provided at one side of the wafer tray 111, and a pressure reducing means such as a vacuum pump (not shown) is connected to the tip of the channel opening / closing valve 116.

  First, the semiconductor wafer 112 is held on the wafer tray 111, and the inspection substrate 120 is brought into close contact with the annular seal member 114 in a state where each inspection terminal 118 of the inspection substrate 120 is opposed to each inspection electrode 113. Thus, a sealed space 119 surrounding the wafer holding part 117 is formed. Next, the sealed space 119 is brought into a decompressed state by driving the decompression means such as a vacuum pump to decompress the inside of the decompression concave groove 115.

By reducing the pressure in the sealed space 119, a pressure difference is generated between the front surface side and the back surface side of the inspection substrate 120, and a force is applied to press the inspection substrate 120 toward the wafer tray 111. As a result, the cross-sectional shape of the annular seal member 114 is elastically deformed into an arcuate shape, so that the inspection substrate 120 and the wafer tray 111 come closer to each other and the inspection terminal 118 and the inspection electrode 113 are reliably in contact with each other.
Japanese Patent Laid-Open No. 7-231019

  However, the conventional wafer batch inspection apparatus has the following problems. The inspection substrate 120 is larger than the semiconductor wafer 112 to be inspected, and there is a region where the inspection terminals 118 are not provided in the region outside the inspection substrate 120. When the inspection terminal 118 and the inspection electrode 113 are pressed against each other by reducing the pressure in the sealed space 119, the outermost inspection terminal 118 and the seal member 114 are in contact with each other. There is nothing that supports the inspection substrate 120 in the positioned region.

  Further, since the seal member 114 is an elastic body and is more easily deformed than the inspection terminal 118, the region outside the inspection substrate 120 is closer to the wafer tray 111 than the center portion. As a result, the inspection substrate 120 is deflected and the central portion of the inspection substrate 120 is lifted up.

  Therefore, the force that presses the inspection terminal 118 formed on the peripheral portion of the inspection substrate 120 against the inspection electrode 113 is very strong, while the inspection terminal is located in the central portion excluding the peripheral portion of the inspection substrate 120. The force that presses the terminal 118 against the inspection electrode 113 is weakened. That is, the force for bringing the inspection terminal 118 and the inspection electrode 113 into contact greatly varies within the surface of the semiconductor wafer 112. As a result, there arises a problem that the contact resistance between the inspection terminal 118 and the inspection electrode 113 located in the central portion increases.

  The simplest method for solving this is to increase the rigidity of the inspection substrate 120 by increasing the thickness of the inspection substrate 120. In this case, however, the inspection substrate 120 becomes heavy and the inspection substrate 120 becomes heavy. There is a problem that handling in the process becomes difficult.

  The present invention solves the above-mentioned problem, and even when the peripheral portion of the inspection substrate is deformed so as to be closer to the wafer tray side than the central portion by setting the sealed space around the wafer holding portion in a reduced pressure state, An object of the present invention is to realize a wafer batch inspection apparatus in which inspection terminals are evenly pressed against inspection electrodes and contact resistance between the inspection terminals and the inspection electrodes does not increase.

  In order to achieve the above object, in the present invention, the wafer collective inspection apparatus is configured to include an inspection substrate in which the height of the inspection terminal at the peripheral portion is lower than that of other regions.

  Specifically, a first wafer collective inspection apparatus according to the present invention includes a wafer tray that holds a semiconductor wafer, an inspection substrate that collectively inspects a plurality of semiconductor elements formed on the main surface of the semiconductor wafer, and The inspection substrate is disposed to face the wafer tray and has a plurality of inspection terminals on the surface facing the wafer tray, each inspection terminal being formed on the main surface of the semiconductor wafer and each semiconductor By being in pressure contact with each inspection electrode electrically connected to the element, it is electrically connected to the inspection substrate and each semiconductor element, and is formed on the peripheral portion of the inspection substrate among the plurality of inspection terminals. The inspection terminal is characterized in that the height from the substrate surface of the inspection substrate is lower than the inspection terminal formed in the region excluding the peripheral portion of the inspection substrate.

  According to the first wafer collective inspection apparatus, the inspection terminals formed on the peripheral portion of the inspection substrate among the plurality of inspection terminals are more than the inspection terminals formed in the region excluding the peripheral portion of the inspection substrate. Even when the inspection substrate is deformed when the inspection terminal having a low height from the substrate surface of the inspection substrate is pressed against the inspection electrode, each inspection terminal is equally pressed against the corresponding inspection electrode. Therefore, an increase in contact resistance between the inspection terminal and the inspection electrode can be prevented, and as a result, a highly reliable wafer batch inspection apparatus can be realized.

  In the first wafer collective inspection apparatus, the wafer tray includes a tray main body, a wafer holding portion that is provided on the tray main body and holds a semiconductor wafer, and a seal member that is provided on the tray main body so as to surround the wafer holding portion. The sealing member is in close contact with the inspection substrate, thereby making the space around the wafer holding portion a sealed space, and the plurality of inspection terminals are respectively provided with the corresponding inspection electrodes by depressurizing the sealed space. It is preferable to press-contact. With such a configuration, the inspection terminal can be reliably pressed against the inspection electrode.

  In the first wafer batch inspection apparatus, the inspection substrate includes a wiring substrate, a bumped sheet disposed between the semiconductor substrate held on the wafer tray and the wiring substrate, and the wiring substrate and the bumped sheet. Each inspection terminal is provided on a surface opposite to the bump terminal of the bumped sheet, and a bump terminal provided on the surface facing the semiconductor substrate of the bumped sheet. Connected to the bump terminals and electrically connected to the bump terminals, a substrate electrode provided on the surface of the wiring board facing the bumped sheet, and an anisotropic conductive elastic sheet so as to penetrate and connect to the substrate electrodes A bump terminal formed on a peripheral portion of the bumped sheet, than a bump terminal formed in a region excluding the peripheral portion of the bumped sheet, It is preferable that a low height from the seat surface of the pump with the sheet. By doing in this way, the height of the inspection terminal at the peripheral edge of the inspection substrate can be reliably reduced.

  In the first wafer batch inspection apparatus, the inspection substrate includes a wiring substrate, a bumped sheet disposed between the semiconductor substrate held on the wafer tray and the wiring substrate, and the wiring substrate and the bumped sheet. Each inspection terminal is provided on a surface opposite to the bump terminal of the bumped sheet, and a bump terminal provided on the surface facing the semiconductor substrate of the bumped sheet. Connected to the bump terminals and electrically connected to the bump terminals, a substrate electrode provided on the surface of the wiring board facing the bumped sheet, and an anisotropic conductive elastic sheet so as to penetrate and connect to the substrate electrodes A conductor formed on the periphery of the anisotropic conductive elastic sheet is higher than a conductor formed on a region excluding the periphery of the anisotropic conductive elastic sheet. Saga Ikoto is preferable. Even with such a configuration, the height of the inspection terminal at the peripheral edge of the inspection substrate can be reliably reduced.

  In the first wafer batch inspection apparatus, the inspection substrate includes a wiring substrate, a bumped sheet disposed between the semiconductor substrate held on the wafer tray and the wiring substrate, and the wiring substrate and the bumped sheet. Each inspection terminal is provided on the surface opposite to the bump terminal of the bumped sheet and the bump terminal provided on the surface facing the semiconductor substrate of the bumped sheet. And a connection terminal electrically connected to the bump terminal, a substrate electrode provided on the surface of the wiring substrate facing the bumped sheet, and the substrate electrode and the connection terminal formed so as to penetrate the anisotropic conductive elastic sheet. The substrate electrode formed on the peripheral portion of the wiring board is higher than the substrate electrode formed in the region excluding the peripheral portion of the wiring substrate from the substrate surface of the wiring substrate. The It is preferably formed at a lower position. Even in such a configuration, the height of the inspection terminal at the peripheral edge of the inspection substrate can be reliably reduced.

  A second wafer collective inspection apparatus according to the present invention includes a wafer tray for holding a semiconductor wafer, and an inspection substrate for inspecting a plurality of semiconductor elements formed on the main surface of the semiconductor wafer. The substrate for use is disposed facing the wafer tray and has a plurality of inspection terminals on the surface facing the wafer tray, the wafer tray is provided on the tray body, the wafer holding unit on which the semiconductor wafer is mounted, It is provided in the tray body so as to surround the wafer holding part, and has a sealing member that closes the space around the wafer holding part by being in close contact with the inspection substrate. The wafer holding part is decompressed. Thus, the height from the center of the wafer holding part toward the peripheral part is adjusted in accordance with the shape of the warp generated on the inspection substrate when each inspection terminal and each inspection electrode are pressed against each other. Wherein the protruding region to be low in are provided.

  According to the second wafer collective inspection apparatus, the wafer holding portion matches the shape of the warp generated on the inspection substrate when the inspection terminals and the inspection electrodes are pressed against each other by depressurizing the sealed space. In addition, since the convex region in which the height of the central portion of the wafer holding portion is higher than the peripheral portion is provided, the peripheral portion of the inspection substrate is centered when the inspection terminal is pressed against the inspection electrode. Even when it is deformed so as to be closer to the wafer tray side than the portion, it is possible to uniformly press contact each inspection terminal with the corresponding inspection electrode. Accordingly, an increase in contact resistance between the inspection terminal and the inspection electrode can be prevented, and as a result, a highly reliable wafer batch inspection apparatus can be realized.

  In the second wafer collective inspection apparatus, the convex region is preferably formed by a convex member having a structure that is detachable from the wafer holder. By adopting such a configuration, it becomes possible to replace the convex member according to the degree of deformation of the inspection substrate, and it is possible to press the inspection terminals and the inspection electrodes more uniformly.

  A first inspection substrate manufacturing method according to the present invention includes a plurality of inspections used in a wafer batch inspection apparatus that collectively inspects a plurality of semiconductor elements formed on a main surface of a semiconductor wafer held on a wafer tray. A method of manufacturing a test substrate having a test terminal, forming a wiring substrate having a plurality of substrate electrodes as a base portion of each test terminal, and a plurality of bump terminals as tip portions of each test terminal; Forming a sheet with bumps having a plurality of connection terminals electrically connected to each bump terminal, and anisotropic conductivity having a plurality of conductors electrically connecting each substrate electrode and each connection terminal A step of forming an elastic sheet, and a step of forming a sheet with a bump includes a step of bonding a rigid ring to a laminated film in which a conductive film and an insulating film are laminated, and a step in the laminated film. A step of forming a plurality of bump holes penetrating the insulating film and exposing the conductive film at a predetermined position, filling each bump hole with a conductive material, and forming each bump hole on the surface of the insulating film By isotropically growing a conductive material in the peripheral region, a step of forming a plurality of bump terminals each electrically connected to the conductive film and a connection portion between each bump terminal in the conductive film are left. Patterning and forming a plurality of connection terminals each electrically connected to each bump terminal, and the step of forming a bump hole includes a peripheral portion of the laminated film and a peripheral portion of the laminated film. It is a process of forming a bump hole whose diameter is smaller than that of the bump hole formed in the region excluding.

  According to the first method for manufacturing a substrate for inspection, since it includes a step of forming a bump hole having a smaller diameter than a bump hole formed in a region excluding the peripheral portion of the laminated film at the peripheral portion of the laminated film, Since the height of the inspection terminal at the peripheral edge portion of the inspection substrate can be reduced, each inspection terminal corresponds even when the inspection substrate is deformed when the inspection terminal is pressed against the inspection electrode. It is possible to easily obtain an inspection substrate that is uniformly pressed against the inspection electrode.

  In the first method for manufacturing an inspection substrate, the step of forming the bump terminal is preferably a step of depositing a conductive material in the inside of the bump hole and in the peripheral region of the bump hole in the laminated film by electroplating. The conductive material is preferably nickel. By doing so, bump holes having different heights can be reliably formed.

  The second inspection substrate manufacturing method of the present invention is a plurality of inspection substrates used in a wafer collective inspection apparatus that collectively inspects a plurality of semiconductor elements formed on a main surface of a semiconductor wafer held on a wafer tray. Targeting a method for manufacturing an inspection substrate having a terminal, a step of forming a wiring substrate having a plurality of substrate electrodes that are base portions of each inspection terminal, a plurality of bump terminals that are tip portions of each inspection terminal, Forming a sheet with bumps having a plurality of connection terminals electrically connected to each bump terminal, and anisotropic conductive elasticity having a plurality of conductors electrically connecting each substrate electrode and each connection terminal A step of forming a sheet, and the step of forming an anisotropic conductive elastic sheet includes a pair of upper and lower molds provided with a plurality of conductor formation regions in which magnetic materials are embedded in mutually opposing portions. And a man who prepares A step of sandwiching uncured silicon rubber interspersed with conductive particles in a gap between a pair of upper mold and lower mold, and applying a magnetic field from outside the pair of upper mold and lower mold A plurality of conductive particles scattered in the silicon rubber by the magnetic field generated in the magnetic material are arranged in a chain electrically connected to each other in each conductor forming region, and pass through the anisotropic conductive elastic sheet. A pair of upper molds and lower molds in a conductor forming region located at the peripheral edge of the pair of upper molds and lower molds. The gap between the pair of upper mold and the lower mold is a gap between the pair of upper mold and the lower mold in the conductor forming region located at a portion excluding the peripheral portion of the pair of upper mold and the lower mold. It is set to be smaller than the gap between them, and the region located at the peripheral edge of the anisotropic conductive elastic sheet Wherein the conductive periphery height than a conductor formed in a region excluding the elastic sheet to form a lower conductor.

  According to the second inspection substrate manufacturing method, the region located at the peripheral edge of the anisotropic conductive elastic sheet has a height higher than the conductor formed in the region excluding the peripheral edge of the anisotropic conductive elastic sheet. Since the low conductor is formed, the height of the inspection terminal at the peripheral portion of the inspection substrate can be reduced, so that the inspection substrate is deformed when the inspection terminal is pressed against the inspection electrode. In addition, it is possible to easily obtain an inspection substrate in which each inspection terminal is uniformly pressed against the corresponding inspection electrode.

  The third inspection substrate manufacturing method of the present invention is a plurality of inspection substrates used in a wafer batch inspection apparatus that collectively inspects a plurality of semiconductor elements formed on a main surface of a semiconductor wafer held on a wafer tray. Targeting a method for manufacturing an inspection substrate having a terminal, a step of forming a wiring substrate having a plurality of substrate electrodes that are base portions of each inspection terminal, a plurality of bump terminals that are tip portions of each inspection terminal, Forming a sheet with bumps having a plurality of connection terminals electrically connected to each bump terminal, and anisotropic conductive elasticity having a plurality of conductors electrically connecting each substrate electrode and each connection terminal Forming a sheet, and the step of forming the wiring board includes a step of forming a step insulating film in a predetermined region on the substrate body of the wiring substrate, and a substrate including the step insulating film A little on the body The method includes a step of forming an interlayer insulating film of one layer and a step of forming a plurality of substrate electrodes on the interlayer insulating film, wherein the substrate electrode is disposed at a peripheral portion of the wiring substrate from a region excluding the peripheral portion of the wiring substrate. Is formed at a position where the height from the substrate body is low.

  According to the third method for manufacturing a substrate for inspection, the substrate electrode is formed at a position where the height from the substrate body is lower than the region excluding the periphery of the wiring substrate at the peripheral portion of the wiring substrate. Since the height of the inspection terminal at the peripheral edge can be reduced, even if the inspection substrate is deformed when the inspection terminal is pressed against the inspection electrode, each inspection terminal becomes a corresponding inspection electrode. It is possible to easily obtain an inspection substrate that is uniformly pressed.

  According to the inspection substrate, the manufacturing method thereof, and the wafer tray of the present invention, the peripheral space of the inspection substrate is closer to the wafer tray side than the center portion by reducing the sealed space around the wafer holding portion. Even when the bump terminal is deformed, it is possible to realize a wafer batch inspection apparatus in which the bump terminals are uniformly pressed against the inspection electrodes and the contact resistance between the bump terminals and the inspection electrodes does not increase.

(First embodiment)
A first embodiment of the present invention will be described with reference to the drawings. FIG. 1 shows a sectional structure of a wafer batch inspection apparatus provided with an inspection substrate according to the present embodiment, FIG. 1 (a) shows the whole, and FIG. 1 (b) shows FIG. 1 (a). The area A of FIG.

  As shown in FIG. 1, the wafer batch inspection apparatus according to the present embodiment includes a wafer tray 11, a wafer tray 11, and an inspection substrate 20 disposed so that the main surfaces face each other.

  The semiconductor wafer 12 is held on the wafer holder 17 of the wafer tray 11 with the main surface facing up. On the main surface of the semiconductor wafer 12, a plurality of semiconductor elements are formed in each chip formation region, and a plurality of inspection electrodes 13 are provided on each semiconductor element.

  On the main surface of the inspection substrate 20, inspection terminals 18 are provided at positions corresponding to the plurality of inspection electrodes 13 provided on the semiconductor wafer 12 held on the wafer tray 11. By pressing the inspection terminals 18 corresponding to the respective inspection electrodes 13 and electrically connecting the inspection substrate 20 and the respective semiconductor elements, the power supply voltage and various signals are supplied to the respective semiconductor elements. Then, the operation state of each semiconductor element is monitored. Thereby, inspections such as burn-in can be performed in a batch of wafers.

  The inspection substrate 20 of the present embodiment includes a wiring substrate 21, an anisotropic conductive elastic sheet 31, and a bumped sheet 41.

  The bumped sheet 41 includes an insulating film 42 made of polyimide with an outer peripheral portion fixed by a rigid ring 45, a plurality of bump terminals 43 provided on the surface of the insulating film 42 facing the wafer tray 11, and an insulating film. 42 is provided on a surface opposite to the bump terminal 43 and is constituted by a connection terminal 44 electrically connected to each bump terminal. In the present embodiment, two types of bump terminals having different diameters are provided as the bump terminals 43, and the bump terminals 43 provided on the peripheral edge where the inspection substrate 20 is largely deformed on the wafer tray 11 side are the other bump terminals 43. The diameter is smaller and the height is lower than the bump terminal 43 provided in the region.

  The wiring substrate 21 includes a substrate body 28 that is a glass substrate, a multilayer wiring provided on a surface (main surface) facing the wafer tray 11 of the substrate body 28, and each of the bumped sheets 41 connected to the multilayer wiring. A plurality of substrate electrodes 26 are provided at positions facing the connection terminals 44. In the present embodiment, the multilayer wiring is composed of two layers of a lower layer wiring 22 and an upper layer wiring 24, and the lower layer wiring 22 and the upper layer wiring 24 are embedded in the lower layer insulating film 23 and the upper layer insulating film 25, which are interlayer insulating films, respectively. It is.

  The anisotropic conductive elastic sheet 31 includes an elastic body 32 that is an insulating silicon rubber and a conductive body 33 that penetrates the elastic body 32, and is disposed between the wiring substrate 21 and the bumped sheet 41. The conductor 33 is provided at a position corresponding to each connection terminal 44 of the bumped sheet 41 and each substrate electrode 26 of the wiring board 21. Thereby, each connection terminal 44 of the sheet | seat 41 with a bump and each board | substrate electrode 26 of the wiring board 21 corresponding are each electrically connected, and the terminal 18 for an inspection is formed. In the present embodiment, the conductor 33 is formed as a row of conductive particles arranged in a chain so that a plurality of conductive particles are in contact with the surface. As the conductive particles, nickel plated nickel balls having a diameter of about 10 μm may be used.

  The portion of the anisotropic conductive elastic sheet 31 where the conductor 33 is formed is formed so as to protrude toward the bumped sheet 41. For this reason, even when the semiconductor wafer 12 has a stepped portion or warps, the effect of the step or the like is absorbed by the elasticity of the anisotropic conductive elastic sheet, and the inspection terminal 18 is reliably inspected. The electrode 13 can be pressed.

  In the present embodiment, the following method is used to press the inspection terminal 18 against the inspection electrode 13.

  An annular seal member 14 is provided on the wafer tray 11 so as to surround the wafer holding portion 17. The seal member 14 is an elastic body having a lip-shaped cross section, and forms a sealed space 19 that surrounds the wafer holding portion 17 by being in close contact with the inspection substrate 20.

  The wafer tray 11 is provided with a flow path opening / closing valve 16 and a pressure-reducing concave groove 15. The flow path opening / closing valve 16 is opened, and the sealed space 19 is decompressed by a pressure reducing means such as a vacuum pump. By making the internal pressure of the sealed space 19 lower than the atmospheric pressure, a pressure corresponding to the difference between the atmospheric pressure and the internal pressure of the sealed space 19 is applied to the surface opposite to the main surface of the inspection substrate 20. The substrate 20 is pressed against the wafer tray 11 side. Therefore, the inspection terminal 18 provided on the main surface of the inspection substrate 20 and the inspection electrode 13 of the semiconductor wafer 12 held on the wafer tray 11 are pressed against each other.

  When the inspection substrate 20 is pressed against the wafer tray 11, the central portion of the inspection substrate 20 where the inspection terminals 18 are provided is supported by the inspection terminals 18. On the other hand, the region outside the inspection terminal 18 formed on the outermost side is supported only by the seal member 14. The seal member 14 is an elastic body, and is greatly deformed compared to the inspection terminal 18 when a force is applied. Therefore, since the inspection substrate 20 is closer to the wafer tray 11 than the central portion in the outer region, distortion occurs, and the inspection terminal 18 is pressed against the inspection electrode 13 when the height of the inspection terminal 18 is uniform. The force that presses the inspection terminal 18 against the inspection electrode becomes weaker toward the center of the inspection substrate 20, resulting in poor conduction.

  In the present embodiment, among the bump terminals 43 of the sheet 41 with bumps, the diameter of the bump terminals 43 provided at the peripheral edge where the inspection substrate 20 is greatly deformed toward the wafer tray 11 is provided in another region. The bump terminal 43 is smaller and the height is lower. Thereby, the inspection terminal 18 provided on the peripheral portion of the inspection substrate 20 has a lower height than the inspection terminals 18 provided in other regions. Accordingly, even when the peripheral portion of the inspection substrate 20 is deformed so as to be closer to the wafer tray 11 than the central portion by reducing the pressure of the sealed space 19, each inspection terminal 18 is uniform with the corresponding inspection electrode 13. Pressure contacted.

  Hereinafter, the manufacturing method of the sheet | seat with a bump which comprises the board | substrate for an inspection which concerns on this embodiment is demonstrated, referring FIG.

  FIG. 2 shows a cross-sectional configuration in each manufacturing process of the bumped sheet 41 in the order of processes. First, as shown in FIG. 2A, a polyimide precursor is cast to a thickness of about 25 μm on a conductive film 46 made of copper having a thickness of about 18 μm. Subsequently, the polyimide precursor is dried and cured by heating to form an insulating film 42 made of polyimide, and a laminated film 47 of copper and polyimide is formed.

  Next, a thin, uniform (50 μm to 100 μm) thermosetting adhesive applied to one side of a circular rigid ring 45 having a diameter of about 12 inches and a thickness of about 4 mm is used as the insulating film 42 of the laminated film 47. Paste to the side. Subsequently, the laminated film 47 to which the rigid ring 45 is bonded is heated to a temperature higher than the curing temperature of the adhesive to adhere the rigid ring 45 to the laminated film 47.

  As the thermosetting adhesive used for bonding the rigid ring 45, a thermosetting adhesive that cures at a temperature higher by 0 ° C. to 50 ° C. than the maximum set temperature of a test such as burn-in is used. In this embodiment, since the inspection set temperature is 80 ° C. to 150 ° C., a thermosetting adhesive having a curing temperature of 200 ° C. is used, and heat treatment is performed at a temperature of 200 ° C. for 3 hours.

  Next, the laminated film 47 to which the rigid ring 45 is bonded is cooled to room temperature, the laminated film 47 is contracted to a state before heating, and then the laminated film 47 outside the rigid ring 45 along the outer periphery of the rigid ring 45. Cut off.

  Next, a bump hole 48 is formed at a predetermined position of the insulating film 42 in the laminated film 47 using an excimer laser. The diameter of the bump hole 48 is set in accordance with a deformation state in which the inspection substrate 20 is deformed toward the wafer tray 11 when the sealed space 19 is decompressed. In the present embodiment, the diameter of the bump hole 48 formed in the region serving as the peripheral portion of the inspection substrate 20 is 20 μm, and the diameter of the bump hole formed in the other region is 40 μm.

  Next, as shown in FIG. 2B, nickel (Ni) is embedded in the bump holes 48 by electroplating. When the bump hole 48 is filled with Ni and reaches the surface of the insulating film 42, the Ni film spreads isotropically and grows almost hemispherical. Accordingly, bump terminals 43 having different heights are formed in the bump holes 48 having different diameters.

  During electroplating, a protective film is formed on the surface of the conductive film 46 so that the surface of the conductive film 46 is not plated.

  Next, as shown in FIG. 2C, after applying a resist 49 to the entire surface of the conductive film 46, the resist 49 is applied only to the region on the back side of the bump terminal 43 as shown in FIG. Pattern to leave.

  Next, as shown in FIG. 2E, the connection terminal 44 is formed by etching the conductive film 46 such as a copper foil using the resist pattern as a mask. After that, the bumped sheet 41 is completed by removing the resist pattern.

  Here, the copper foil is used as the conductive film, the polyimide film is used as the insulating film, and the Ni plating is used as the conductive material. However, the present invention is not limited to these materials, and has respective characteristics. As long as other materials are used, there is no problem.

  In the present embodiment, Ni is used to form the hard nickel bump terminal, but the bump terminal may be formed of a material mainly composed of metal such as Au. An alloy such as Au may be formed on the surface of the Ni bump. In addition, the area where the height of the bump terminal is lowered and the ratio where the height of the bump terminal is lowered may be changed as appropriate depending on the size and material of the inspection substrate, the degree of vacuum of the sealed space, and the like.

(Second Embodiment)
Below, the 2nd Embodiment of this invention is described, referring drawings. FIG. 3 shows a cross-sectional structure of a wafer batch inspection apparatus provided with the inspection substrate according to the present embodiment, FIG. 3 (a) shows the whole, and FIG. 3 (b) shows the structure of FIG. 3 (a). Region A is shown enlarged. In FIG. 3, the same components as those in FIG.

  As shown in FIG. 3, in the present embodiment, the height of the conductor 33 formed on the anisotropic conductive elastic sheet 31 constituting the inspection substrate 20 is higher than that of other regions at the peripheral edge of the inspection substrate 20. Is also low. For this reason, the height of the inspection terminal 18 is lower than the other regions in the peripheral portion of the inspection substrate 20. Therefore, when the sealed space 19 surrounding the wafer holding unit 17 is depressurized, even when the peripheral portion of the inspection substrate 20 is deformed so as to be closer to the wafer tray 11 than the central portion, it is provided in the central portion of the inspection substrate 20. The pressure at which the inspection terminal 18 is in pressure contact with the inspection electrode 13 is not smaller than the pressure at which the inspection terminal 18 provided on the peripheral portion of the inspection substrate 20 is in pressure contact with the inspection electrode 13, All the inspection terminals 18 are in pressure contact with the inspection electrodes 13 with a uniform pressure.

  Below, the manufacturing method of the anisotropic conductive elastic sheet which comprises the board | substrate for an inspection which concerns on this embodiment is demonstrated, referring FIG.

  FIG. 4 shows a cross-sectional configuration in each manufacturing process of the anisotropic conductive elastic sheet in the order of processes.

  First, as shown in FIG. 4A, an upper mold 34 and a lower mold 35 for forming a rubber sheet are prepared. A resin mold made of a non-magnetic material is used as the mold material. The upper metal mold 34 and the lower metal mold 35 are provided with a plurality of conductor forming regions at predetermined portions, and the magnetic material 36 is embedded in each conductor forming region of the upper metal mold 34 so as to face each other. A magnetic body 37 is embedded in each conductor forming region of the mold 35.

  A depression is formed in each conductor forming region in the upper mold 34, and the distance between the upper mold 34 and the lower mold 35 is wider than other regions. Thereby, the area | region where the conductor 33 was embedded can be shape | molded in the shape which protruded. In the present embodiment, the gap between the upper mold 34 and the lower mold 35 is set to 400 μm to 600 μm in the conductor forming region and 200 μm in the other regions.

  Next, the uncured silicon rubber 38 in which the conductive balls are dispersed is sandwiched between the upper mold 34 and the lower mold 35. As the conductive ball dispersed in the silicon rubber 38, a nickel ball having a diameter of 10 μm and a gold plating of about 1 μm was used.

  Next, as shown in FIG. 4B, in this state, a magnetic field is applied from the outside of the upper mold 34 and the lower mold 35 by a magnet. As a result, the conductive balls dispersed in the silicon rubber 38 are localized in the conductor formation region by the magnetic field of the magnetic body 36 and the magnetic body 37, are arranged in a chain form in contact with each other, and the elastic body 32. It becomes the conductor 33 which penetrates.

  Next, when the silicon rubber 38 is thermoset by heating the mold, the anisotropic conductive elastic sheet 31 having a plurality of conductors 33 penetrating the elastic body 32 is obtained. In the present embodiment, by changing the distance between the upper mold 34 and the lower mold 35 in the conductor formation region, the height of the conductor 33 in the region serving as the peripheral portion of the inspection substrate 20 is set in other regions. It is lower than the height of the conductor 33. Thereby, the height of the terminal 18 for inspection can be made lower than the other region in the peripheral portion of the substrate 20 for inspection.

(Third embodiment)
Below, the 2nd Embodiment of this invention is described, referring drawings. FIG. 5 shows a cross-sectional structure of a wafer batch inspection apparatus provided with an inspection substrate according to the present embodiment, FIG. 5 (a) shows the whole, and FIG. 5 (b) shows FIG. 5 (a). The area A of FIG. In FIG. 5, the same components as those in FIG.

  As shown in FIG. 6, in the present embodiment, a step forming insulating film 27 is provided at the center of the wiring substrate 21 constituting the inspection substrate 20, and the substrate electrode 26 is disposed at the peripheral portion of the inspection substrate 20. The height from the substrate main body 28 is lower than the center portion.

  For this reason, the height of the inspection terminal 18 is lower than the other regions in the peripheral portion of the inspection substrate 20. Therefore, when the sealed space 19 is depressurized, the inspection terminal 18 provided in the central portion of the inspection substrate 20 also when the peripheral portion of the inspection substrate 20 is deformed so as to be closer to the wafer tray 11 than the central portion. The pressure at which the inspection terminal 13 is in pressure contact with the inspection electrode 13 does not become smaller than the pressure at which the inspection terminal 18 provided on the peripheral portion of the inspection substrate 20 is in pressure contact with the inspection electrode 13. Is in pressure contact with the inspection electrode 13 with a uniform pressure.

  Below, the manufacturing method of the wiring board which comprises the test | inspection board | substrate which concerns on this embodiment is demonstrated, referring FIG.

  FIG. 6 shows a cross-sectional configuration in each manufacturing process of the wiring board of this embodiment in the order of processes.

  First, as shown in FIG. 6 (a), a chromium (Cr) film having a film thickness of about 300 angstroms is formed on one surface of a substrate body 28 made of glass having a thickness of 5 mm whose surface is polished flat by sputtering. A copper (Cu) film having a thickness of about 2.5 μm and a nickel (Ni) film having a thickness of about 0.3 μm are sequentially formed to form a conductor laminated film. Here, Cr is provided for the purpose of strengthening the adhesion between glass and Cu. Ni is provided for the purpose of preventing the oxidation of Cu, the purpose of enhancing the adhesion to the resist, and the purpose of preventing the polyimide from remaining at the bottom of the contact hole (via) due to the reaction between Cu and polyimide. Note that the method of forming the Ni film is not limited to the sputtering method, and may be formed by an electrolytic plating method or the like. It is also possible to reduce the contact resistance by forming a gold (Au) film or the like on the Ni film by a sputtering method, an electrolytic plating method or an electroless plating method.

  Next, a predetermined photolithography process (resist coating, exposure, development and etching) is performed, and the conductor laminated film is patterned to form the lower layer wiring 22.

  Next, a photosensitive polyimide precursor is applied on the lower layer wiring 22 to a thickness of 10 μm using a spinner or the like. After the applied photosensitive polyimide precursor is baked at 80 ° C. for 30 minutes, the photosensitive polyimide precursor is removed from the peripheral portion of the substrate body 28 by exposure and development using a predetermined mask, and at a predetermined position. A contact hole (not shown) is formed.

  Next, curing is performed at 350 ° C. for 4 hours in a nitrogen atmosphere to completely convert the photosensitive polyimide precursor into a polyimide, thereby forming the step forming insulating film 27. The thickness of the step forming insulating film 27 made of polyimide after curing is reduced to about half (5 μm) after coating. Thereafter, the surface of the polyimide is roughened by plasma treatment to enhance the adhesion with the second wiring layer formed in the next step.

  Next, as shown in FIG. 6B, a photosensitive polyimide precursor is applied to the entire surface of the substrate body 28 including the region where the step forming insulating film 27 is formed with a thickness of 10 μm using a spinner or the like. After forming a contact hole (not shown) in the same manner as the step insulating film, the lower insulating film 23 is formed by curing.

  Next, as shown in FIG. 6C, the upper layer wiring 24 and the substrate electrode 26 made of a conductor laminate film are formed on the lower insulating film 23 in the same manner as the lower layer wiring 22. Next, only the substrate electrode 26 has a thickness of 0.3 μm on the Ni film for the purpose of preventing oxidation and improving the electrical contact with the conductor 33 of the anisotropic conductive elastic sheet 31. The gold (Au) film is formed by electroless plating (not shown).

  Next, after applying polyimide as an insulating film on the substrate, only the polyimide on the substrate electrode 26 is removed to form the upper insulating film 25.

  Thus, by providing the step forming insulating film 27 only at the central portion of the wiring substrate 21, the substrate electrode 26 can be formed at a lower position than the other regions in the peripheral portion of the wiring substrate 21. Thereby, the height of the terminal 18 for inspection can be made lower than the other region in the peripheral portion of the substrate 20 for inspection.

  In the first to third embodiments, two types of bump terminals, conductors, or substrate electrodes are set so that the peripheral edge of the inspection substrate is lower than the other regions. Although an example is shown, the present invention is not limited to this, and three or more types of heights that change stepwise from the center of the wafer tray toward the peripheral edge may be set. Moreover, you may make it change continuously toward a peripheral part from a center part. In this way, the bump terminals, the inspection electrodes, and the wafer surface can be more uniformly pressed.

(Fourth embodiment)
Below, the 4th Embodiment of this invention is described, referring drawings. FIG. 7 shows a cross-sectional structure of a wafer batch inspection apparatus according to the fourth embodiment. In FIG. 7, the same components as those in FIG.

  As shown in FIG. 7, in the present embodiment, a convex region 50 is provided on the surface of the wafer holder 17 that is provided on the main surface of the wafer tray 11 and holds the semiconductor wafer 12. The convex region 50 is formed in accordance with the shape of the warp generated in the inspection substrate 20 when the sealed space 19 formed by bringing the inspection substrate 20 and the annular seal member 14 into close contact with each other is decompressed. The height is gradually reduced from the center to the periphery.

  Therefore, the distance between the inspection substrate 20 and the semiconductor wafer 12 can be made constant over the entire surface of the semiconductor wafer 12, and each inspection terminal 18 provided on the inspection substrate 20 is provided on the semiconductor wafer 12. Thus, it is possible to uniformly press-contact each of the inspection electrodes 13.

  The convex region 50 may be formed by polishing the main surface of the wafer tray 11 into a predetermined shape. Alternatively, a convex member separately formed on the main surface of the wafer tray 11 may be fixed.

  For example, as shown in FIG. 8, a concave portion 52 may be formed on the main surface of the wafer tray 11 so that the convex member 51 is fitted into the concave portion 52 so that the convex member 51 can be replaced. Thus, by making the convex member 51 replaceable, the shape of the convex region 50 can be changed when the inspection substrate 20 is replaced in accordance with the semiconductor wafer 12 to be inspected. As a result, regardless of the inspection substrate 20 used, all the inspection terminals 18 can be uniformly in pressure contact with the corresponding inspection electrodes 13.

  In addition, although the example in which the height of the convex region 50 is continuously changed is shown, it may be changed stepwise.

  In the wafer batch inspection apparatus and the inspection substrate manufacturing method according to the present invention, the peripheral portion of the inspection substrate is closer to the wafer tray side than the center portion by reducing the sealed space around the wafer holding portion. Even when it is deformed, a bump terminal is pressed against the inspection electrode evenly, and a wafer batch inspection device can be realized in which the contact resistance between the bump terminal and the inspection electrode does not increase. The present invention is useful as a wafer batch inspection apparatus that collectively inspects a plurality of semiconductor chips in a wafer state and a method of manufacturing an inspection substrate used therefor.

It is sectional drawing which shows the wafer package inspection apparatus provided with the board | substrate for an inspection which concerns on the 1st Embodiment of this invention, (a) is a general view, (b) is an enlarged view of the area | region A of (a). is there. It is sectional drawing which shows the manufacturing method of the sheet | seat with a bump which comprises the board | substrate for a test | inspection which concerns on the 1st Embodiment of this invention in order of a process. It is sectional drawing which shows the wafer package inspection apparatus provided with the board | substrate for an inspection which concerns on the 2nd Embodiment of this invention, (a) is a general view, (b) is an enlarged view of the area | region A of (a). is there. It is sectional drawing which shows the manufacturing method of the anisotropic conductive rubber sheet which comprises the board | substrate for a test | inspection which concerns on the 2nd Embodiment of this invention in order of a process. It is sectional drawing which shows the wafer package inspection apparatus provided with the board | substrate for an inspection which concerns on the 3rd Embodiment of this invention, (a) is a general view, (b) is an enlarged view of the area | region A of (a). is there. It is sectional drawing which shows the manufacturing method of the wiring board which comprises the board | substrate for a test | inspection which concerns on the 3rd Embodiment of this invention in order of a process. It is sectional drawing which shows the wafer batch inspection apparatus provided with the wafer tray which concerns on the 4th Embodiment of this invention. It is sectional drawing which shows an example of the wafer tray which concerns on the 4th Embodiment of this invention. It is sectional drawing which shows the wafer package inspection apparatus provided with the board | substrate for an inspection which concerns on a prior art example, (a) is a general view, (b) is an enlarged view of the area | region A of (a).

Explanation of symbols

DESCRIPTION OF SYMBOLS 11 Wafer tray 12 Semiconductor wafer 13 Inspection electrode 14 Sealing member 15 Pressure-reducing concave groove 16 Flow path opening / closing valve 17 Wafer holding portion 18 Inspection terminal 19 Sealed space 20 Inspection substrate 21 Wiring substrate 22 Lower layer wiring 23 Lower layer insulating film 24 Upper layer wiring 25 Upper layer insulating film 26 Substrate electrode 27 Step forming insulating film 28 Substrate body (glass substrate)
31 Anisotropic conductive elastic sheet 32 Elastic body 33 Conductor 34 Upper mold 35 Lower mold 36 Magnetic body 37 Magnetic body 38 Uncured silicon rubber 41 Bumped sheet 42 Insulating film 43 Bump terminal 44 Connection terminal 45 Rigid ring 46 Conductive film 47 Laminated film 48 Bump hole 49 Resist 50 Convex region 51 Convex member 52 Concave

Claims (12)

A wafer tray for holding semiconductor wafers;
An inspection substrate for collectively inspecting a plurality of semiconductor elements formed on the main surface of the semiconductor wafer;
The inspection substrate has a plurality of inspection terminals disposed on a surface facing the wafer tray and facing the wafer tray,
Each inspection terminal is formed in contact with each inspection electrode formed on the main surface of the semiconductor wafer and electrically connected to each semiconductor element, whereby the inspection substrate and each semiconductor an element electrically connected,
Of the plurality of inspection terminals, only the inspection terminal formed at the peripheral edge of the inspection substrate is a substrate of the inspection substrate rather than the inspection terminal formed in a region excluding the peripheral edge of the inspection substrate. Wafer batch inspection apparatus characterized by low height from surface. The inspection substrate is:
A wiring board;
A bumped sheet disposed between the semiconductor substrate and the wiring substrate held by the wafer tray;
An anisotropic conductive elastic sheet sandwiched between the wiring board and the bumped sheet,
Each of the inspection terminals is
Bump terminals provided on the surface of the sheet with bumps facing the semiconductor substrate,
A connection terminal provided on a surface opposite to the bump terminal of the bumped sheet and electrically connected to the bump terminal;
A substrate electrode provided on a surface of the wiring board facing the bumped sheet;
A conductor formed so as to penetrate the anisotropic conductive elastic sheet and electrically connecting the substrate electrode and the connection terminal;
The bump terminal formed on the periphery of the bumped sheet has a lower height from the sheet surface of the bumped sheet than the bump terminal formed in a region excluding the periphery of the bumped sheet. The wafer collective inspection apparatus according to claim 1 . A wafer tray for holding a semiconductor wafer on which a plurality of semiconductor elements are formed on the main surface;
An inspection substrate that is disposed to face the wafer tray and inspects the plurality of semiconductor elements at once;
The inspection substrate is:
A wiring board;
A bumped sheet disposed between the semiconductor substrate and the wiring substrate held by the wafer tray;
An anisotropic conductive elastic sheet sandwiched between the wiring board and the bumped sheet ;
A plurality of inspection terminals electrically connected to the inspection substrate and the semiconductor elements by being brought into pressure contact with inspection electrodes provided on the semiconductor elements, provided on a surface facing the wafer tray. And
Each of the inspection terminals is
Bump terminals provided on the surface of the sheet with bumps facing the semiconductor substrate,
A connection terminal provided on a surface opposite to the bump terminal of the bumped sheet and electrically connected to the bump terminal;
A substrate electrode provided on a surface of the wiring board facing the bumped sheet;
A conductor formed so as to penetrate the anisotropic conductive elastic sheet and electrically connecting the substrate electrode and the connection terminal;
Testing terminals formed on the periphery of the testing board of the plurality of terminals for inspection, wherein the anisotropic conductive elastic sheet said conductor formed on the periphery of, the peripheral edge of the anisotropic conductive elastic sheet Since the height is lower than the conductor formed in the region excluding the portion, the height from the substrate surface of the inspection substrate is higher than the inspection terminal formed in the region excluding the peripheral portion of the inspection substrate. Lou vinegar and characterized by a low E Ha batch inspection apparatus. A wafer tray for holding a semiconductor wafer on which a plurality of semiconductor elements are formed on the main surface;
An inspection substrate that is disposed to face the wafer tray and inspects the plurality of semiconductor elements at once;
The inspection substrate is:
A wiring board;
A bumped sheet disposed between the semiconductor substrate and the wiring substrate held by the wafer tray;
An anisotropic conductive elastic sheet sandwiched between the wiring board and the bumped sheet ;
A plurality of inspection terminals electrically connected to the inspection substrate and the semiconductor elements by being brought into pressure contact with inspection electrodes provided on the semiconductor elements, provided on a surface facing the wafer tray. And
Each of the inspection terminals is
Bump terminals provided on the surface of the sheet with bumps facing the semiconductor substrate,
A connection terminal provided on a surface opposite to the bump terminal of the bumped sheet and electrically connected to the bump terminal;
A substrate electrode provided on a surface of the wiring board facing the bumped sheet;
A conductor formed so as to penetrate the anisotropic conductive elastic sheet and electrically connecting the substrate electrode and the connection terminal;
Among the plurality of inspection terminals, the inspection terminal formed on the peripheral portion of the inspection substrate has the substrate electrode formed on the peripheral portion of the wiring substrate in a region excluding the peripheral portion of the wiring substrate. By being formed at a position where the height from the substrate surface of the wiring substrate is lower than the formed substrate electrode, the inspection terminal is formed more than the inspection terminal formed in the region excluding the peripheral portion of the inspection substrate. the low height characteristics and to roux E c bulk inspection apparatus from the substrate surface of the substrate. The wafer tray includes a tray main body, a wafer holding portion that is provided in the tray main body and holds the semiconductor wafer, and a seal member that is provided in the tray main body so as to surround the wafer holding portion,
The sealing member is in close contact with the inspection substrate, thereby making the space around the wafer holding portion a sealed space,
Wherein the plurality of terminals for inspection, said by the enclosed space under reduced pressure, the wafer batch testing apparatus according to any one of claims 1-4, characterized in that it is pressed against and the inspection electrodes corresponding . A wafer tray for holding semiconductor wafers;
An inspection substrate for collectively inspecting a plurality of semiconductor elements formed on the main surface of the semiconductor wafer;
The inspection substrate has a plurality of inspection terminals disposed on a surface facing the wafer tray and facing the wafer tray,
The wafer tray includes a tray body,
A wafer holder provided on the tray body, on which the semiconductor wafer is mounted;
A seal member that is provided in the tray body so as to surround the wafer holding unit, and seals a space around the wafer holding unit by being in close contact with the inspection substrate;
In the wafer holding portion, the wafer holding portion matches the shape of the warp generated in the inspection substrate when the inspection terminals and the inspection electrodes are pressed against each other by depressurizing the sealed space. A wafer collective inspection apparatus characterized in that a convex region is formed in which the height of the central portion of the substrate is higher than that of the peripheral portion.   The wafer collective inspection apparatus according to claim 6, wherein the convex region is formed by a convex member having a structure that is detachable from the wafer holding unit. A method for manufacturing an inspection substrate having a plurality of inspection terminals used in a wafer collective inspection apparatus for collectively inspecting a plurality of semiconductor elements formed on a main surface of a semiconductor wafer held on a wafer tray,
Forming a wiring board having a plurality of substrate electrodes which are base portions of the respective inspection terminals;
Forming a bumped sheet having a plurality of bump terminals which are tip portions of the respective inspection terminals and a plurality of connection terminals electrically connected to the respective bump terminals;
Forming an anisotropic conductive elastic sheet having a plurality of conductors that electrically connect each of the substrate electrodes and each of the connection terminals,
The step of forming the bumped sheet includes
Bonding a rigid ring to a laminated film in which a conductive film and an insulating film are laminated;
Forming a plurality of bump holes through the insulating film and exposing the conductive film at a predetermined position in the laminated film;
Each of the bump holes is filled with a conductive material, and the conductive material is isotropically grown in a peripheral region of each bump hole on the surface of the insulating film, thereby electrically connecting the conductive film and the conductive film. Forming a plurality of bump terminals connected to
Patterning to leave a connection portion with each of the bump terminals in the conductive film, and forming a plurality of connection terminals each electrically connected to the bump terminals,
The step of forming the bump hole is a step of forming a bump hole having a smaller diameter than a bump hole formed in a region excluding the peripheral portion of the laminated film at a peripheral portion of the laminated film. Manufacturing method for industrial use.   9. The step of forming the bump terminal is a step of depositing the conductive material in the inside of the bump hole and in the peripheral area of the bump hole in the laminated film by electroplating. Manufacturing method of inspection substrate.   The method for manufacturing an inspection substrate according to claim 9, wherein the conductive material is nickel. A method for manufacturing an inspection substrate having a plurality of inspection terminals used in a wafer collective inspection apparatus for collectively inspecting a plurality of semiconductor elements formed on a main surface of a semiconductor wafer held on a wafer tray,
Forming a wiring board having a plurality of substrate electrodes which are base portions of the respective inspection terminals;
Forming a bumped sheet having a plurality of bump terminals which are tip portions of the respective inspection terminals and a plurality of connection terminals electrically connected to the respective bump terminals;
Forming an anisotropic conductive elastic sheet having a plurality of conductors that electrically connect each of the substrate electrodes and each of the connection terminals,
The step of forming the anisotropic conductive elastic sheet includes:
Preparing a pair of upper and lower molds provided with a plurality of conductor formation regions in which magnetic materials are embedded in mutually facing parts;
Sandwiching uncured silicon rubber interspersed with conductive particles in a gap between the pair of upper mold and lower mold; and
The conductive particles scattered in the silicon rubber are electrically generated in the respective conductor formation regions by a magnetic field generated in each of the magnetic bodies by applying a magnetic field from outside the pair of upper mold and lower mold. A plurality of conductors penetrating the anisotropic conductive elastic sheet, arranged in a chain connected to each other, and
Curing the silicone rubber,
The pair of upper molds and lower molds is a gap between the pair of upper molds and lower molds in the conductor forming region located at the peripheral portion of the pair of upper molds and lower molds. Is set to be smaller than the gap between the pair of upper mold and the lower mold in the conductor forming region located in a portion excluding the peripheral portion of the pair of upper mold and the lower mold, A conductor having a height lower than that of a conductor formed in a region excluding the peripheral portion of the anisotropic conductive elastic sheet is formed in a region located at the peripheral portion of the anisotropic conductive elastic sheet. A method for manufacturing an inspection substrate. A method for manufacturing an inspection substrate having a plurality of inspection terminals used in a wafer collective inspection apparatus for collectively inspecting a plurality of semiconductor elements formed on a main surface of a semiconductor wafer held on a wafer tray,
Forming a wiring board having a plurality of substrate electrodes which are base portions of the respective inspection terminals;
Forming a bumped sheet having a plurality of bump terminals which are tip portions of the respective inspection terminals and a plurality of connection terminals electrically connected to the respective bump terminals;
Forming an anisotropic conductive elastic sheet having a plurality of conductors that electrically connect each of the substrate electrodes and each of the connection terminals,
The step of forming the wiring board includes
Forming an insulating film for a step in a predetermined region on the substrate body of the wiring board;
Forming at least one interlayer insulating film on the substrate body including the step insulating film;
Forming a plurality of substrate electrodes on the interlayer insulating film,
The inspection is characterized in that the substrate electrode is formed at a position where the height from the substrate body is lower than the substrate electrode formed in a region excluding the peripheral portion of the wiring substrate at the peripheral portion of the wiring substrate. Manufacturing method for industrial use.

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