JP3951701B2 - Display device manufacturing method, electronic device manufacturing method, display device, and electronic device - Google Patents

Description

【００４８】
【化２】

【００４９】
【化３】

【００５０】
【化４】

【００５１】
【化５】

【００５２】
次に陰極１２は、発光素子部１１の全面に形成されており、画素電極１１１と対になって機能層１１０に電流を流す役割を果たす。この陰極１２は、例えば、カルシウム層とアルミニウム層とが積層されて構成されている。このとき、発光層に近い側の陰極には仕事関数が低いものを設けることが好ましく、特にこの形態においては発光層１１０ｂに直接に接して発光層１１０ｂに電子を注入する役割を果たす。また、フッ化リチウムは発光層の材料によっては効率よく発光させるために、発光層１１０と陰極１２との間にＬｉＦを形成する場合もある。
尚、赤色及び緑色の発光層１１０ｂ1、１１１０ｂ2にはフッ化リチウムに限らず、他の材料を用いても良い。従ってこの場合は青色（Ｂ）発光層１１０ｂ3のみにフッ化リチウムからなる層を形成し、他の赤色及び緑色の発光層１１０ｂ1、１１０ｂ2にはフッ化リチウム以外のものを積層しても良い。また、赤色及び緑色の発光層１１０ｂ1、１１０ｂ2上にはフッ化リチウムを形成せず、カルシウムのみを形成しても良い。
尚、フッ化リチウムの厚さは、例えば２〜５ｎｍの範囲が好ましく、特に２ｎｍ程度がよい。またカルシウムのの厚さは、例えば２〜５０ｎｍの範囲が好ましく、特に２０ｎｍ程度がよい。
また、陰極１２を形成するアルミニウムは、発光層１１０ｂから発した光を基板２側に反射させるもので、Ａｌ膜の他、Ａｇ膜、ＡｌとＡｇの積層膜等からなることが好ましい。また、その厚さは、例えば１００〜１０００ｎｍの範囲が好ましく、特に２００ｎｍ程度がよい。
更にアルミニウム上にＳｉＯ、ＳｉＯ₂、ＳｉＮ等からなる酸化防止用の保護層を設けても良い。
尚、このように形成した発光素子上に封止缶６０４を配置する。図２（ｂ）に示すように、封止缶６０４を封止樹脂６０３により接着し、表示装置１を形成する。
【００５３】
次に、本実施形態の表示装置の製造方法を図面を参照して説明する。
本実施形態の表示装置１の製造方法は、例えば、(1)バンク部形成工程、(2)プラズマ処理工程、(3)正孔注入／輸送層形成工程、(4)発光層形成工程、(5)対向電極形成工程、及び(6)封止工程とを具備して構成されている。なお、製造方法はこれに限られるものではなく必要に応じてその他の工程が除かれる場合、また追加される場合もある。
【００５４】
(1)バンク部形成工程
バンク部形成工程では、基板２の所定の位置にバンク部１１２を形成する工程である。バンク部１１２は、第１のバンク層として無機物バンク層１１２ａが形成されてなり、第２のバンク層として有機物バンク層１１２ｂが形成された構造である。以下に形成方法について説明する。
【００５５】
(1)-1 無機物バンク層の形成
まず、図４に示すように、基板上の所定の位置に無機物バンク層１１２ａを形成する。無機物バンク層１１２ａが形成される位置は、第２層間絶縁膜１４４ｂ上及び電極(ここでは画素電極)１１１上である。なお、第２層間絶縁膜１４４ｂは薄膜トランジスタ、走査線、信号線、等が配置された回路素子部１４上に形成されている。
無機物バンク層１１２ａは、例えば、ＳｉＯ₂、ＴｉＯ₂等の無機物膜を材料として用いることができる。これらの材料は、例えばＣＶＤ法、コート法、スパッタ法、蒸着法等によって形成される。
更に、無機物バンク層１１２ａの膜厚は５０〜２００ｎｍの範囲が好ましく、特に１５０ｎｍがよい。
無機物バンク層１１２は、層間絶縁層１１４及び画素電極１１１の全面に無機物膜を形成し、その後無機物膜をフォトリソグラフィ法等によりパターニングすることにより、開口部を有する無機物バンク層１１２が形成される。開口部は、画素電極１１１の電極面１１１ａの形成位置に対応するもので、図４に示すように下部開口部１１２ｃとして設けられる。
このとき、無機物バンク層１１２ａは画素電極１１１の周縁部と重なるように形成される。図４に示すように、画素電極１１１の周縁部と無機物バンク層１１２ａとが重なるように無機物バンク層１１２ａを形成することにより、発光層１１０の発光領域を制御することができる。
【００５６】
(1)-2 有機物バンク層１１２ｂの形成
次に、第２のバンク層としての有機物バンク層１１２ｂを形成する。
図５に示すように、無機物バンク層１１２ａ上に有機物バンク層１１２ｂを形成する。有機物バンク層１１２ｂとして、アクリル樹脂、ポリイミド樹脂等の耐熱性、耐溶剤性を有する材料を用いる。これらの材料を用い、有機物バンク層１１２ｂをフォトリソグラフィ技術等によりパターニングして形成される。なお、パターニングする際、有機物バンク層１１２ｂに上部開口部１１２ｄを形成する。上部開口部１１２ｄは、電極面１１１ａ及び下部開口部１１２ｃに対応する位置に設けられる。
上部開口部１１２ｄは、図５に示すように、無機物バンク層１１２ａに形成された下部開口部１１２ｃより広く形成する事が好ましい。更に、有機物バンク層１１２ｂはテーパーを有する形状が好ましく、有機物バンク層１１２ｂの最低面では画素電極１１１の幅より狭く、有機物バンク層１１２ｂの最上面では画素電極１１１の幅とほぼ同一の幅に形成する事が好ましい。これにより、無機物バンク層１１２ａの下部開口部１１２ｃを囲む第１積層部１１２ｅが、有機物バンク層１１２ｂよりも画素電極１１１の中央側に延出された形になる。
このようにして、有機物バンク層１１２ｂに形成された上部開口部１１２ｄ、無機物バンク層１１２ａに形成された下部開口部１１２ｃを連通させることにより、無機物バンク層１１２ａ及び有機物バンク層１１２ｂを貫通する開口部１１２ｇが形成される。
【００５７】
なお、有機物バンク層１１２ｂの厚さは、０．１〜３．５μｍの範囲が好ましく、特に２μｍ程度がよい。このような範囲とする理由は以下の通りである。
すなわち、厚さが０．１μｍ未満では、後述する正孔注入／輸送層及び発光層の合計厚より有機物バンク層１１２ｂが薄くなり、発光層１１０ｂが上部開口部１１２ｄから溢れてしまうおそれがあるので好ましくない。また、厚さが３．５μｍを越えると、上部開口部１１２ｄによる段差が大きくなり、上部開口部１１２ｄにおける陰極１２のステップガバレッジが確保できなくなるので好ましくない。また、有機物バンク層１１２ｂの厚さを２μｍ以上にすれば、陰極１２と駆動用の薄膜トランジスタ１２３との絶縁を高めることができる点で好ましい。
【００５８】
(2)プラズマ処理工程
次にプラズマ処理工程では、画素電極１１１の表面を活性化すること、更にバンク部１１２の表面を表面処理する事を目的として行われる。特に活性化工程では、画素電極１１１（ＩＴＯ）上の洗浄、更に仕事関数の調整を主な目的として行っている。更に、画素電極１１１の表面の親液化処理、バンク部１１２表面の撥液化処理を行う。
【００５９】
このプラズマ処理工程は、例えば(2)-1予備加熱工程、(2)-2活性化処理工程（親液性にする親液化工程）、(2)-3撥液化処理工程、及び(2)-4冷却工程とに大別される。なお、このような工程に限られるものではなく、必要に応じて工程を削減、更なる工程追加も行われる。
【００６０】
まず、図６は、プラズマ処理工程で用いられるプラズマ処理装置を示す。
図６に示すプラズマ処理装置５０は、予備加熱処理室５１、第１プラズマ処理室５２、第２プラズマ処理室５３、冷却処理室５４、これらの各処理室５１〜５４に基板２を搬送する搬送装置５５とから構成されている。各処理室５１〜５４は、搬送装置５５を中心として放射状に配置されている。
【００６１】
まず、これらの装置を用いた概略の工程を説明する。
予備加熱工程は、図６に示す予備加熱処理室５１において行われる。そしてこの処理室５１により、バンク部形成工程から搬送された基板２を所定の温度に加熱する。
予備加熱工程の後、親液化工程及び撥液化処理工程を行う。すなわち、基板は第１，第２プラズマ処理室５２，５３に順次搬送され、それぞれの処理室５２，５３においてバンク部１１２にプラズマ処理を行い親液化する。この親液化処理後に撥液化処理を行う。撥液化処理の後に基板を冷却処理室に搬送し、冷却処理室５４おいて基板を室温まで冷却する。この冷却工程後、搬送装置により次の工程である正孔注入／輸送層形成工程に基板を搬送する。
【００６２】
以下に、それぞれの工程について詳細に説明する。
(2)-1 予備加熱工程
予備加熱工程は予備加熱処理室５１により行う。この処理室５１において、バンク部１１２を含む基板２を所定の温度まで加熱する。
基板２の加熱方法は、例えば処理室５１内にて基板２を載せるステージにヒータを取り付け、このヒータで当該ステージごと基板２を加熱する手段がとられている。なお、これ以外の方法を採用することも可能である。
予備加熱処理室５１において、例えば７０℃〜８０℃の範囲に基板２を加熱する。この温度は次工程であるプラズマ処理における処理温度であり、次の工程に合わせて基板２を事前に加熱し、基板２の温度ばらつきを解消することを目的としている。
仮に予備加熱工程を加えなければ、基板２は室温から上記のような温度に加熱されることになり、工程開始から工程終了までのプラズマ処理工程中において温度が常に変動しながら処理される事になる。したがって、基板温度が変化しながらプラズマ処理を行うことは、特性の不均一につながる可能性がある。したがって、処理条件を一定に保ち、均一な特性を得るために予備加熱を行うのである。
【００６３】
そこで、プラズマ処理工程においては、第１，第２プラズマ処理装置５２，５３内の試料ステージ上に基板２を載置した状態で親液化工程または撥液化工程を行う場合に、予備加熱温度を、親液化工程または撥液化工程を連続して行う試料ステージ５６の温度にほぼ一致させることが好ましい。
そこで、第１，第２プラズマ処理装置５２，５３内の試料ステージが上昇する温度、例えば７０〜８０℃まで予め基板２を予備加熱することにより、多数の基板にプラズマ処理を連続的に行った場合でも、処理開始直後と処理終了直前でのプラズマ処理条件をほぼ一定にすることができる。これにより、基板２の表面処理条件を同一にし、バンク部１１２の組成物に対する濡れ性を均一化することができ、一定の品質を有する表示装置を製造することができる。
また、基板２を予め予備加熱しておくことにより、後のプラズマ処理における処理時間を短縮することができる。
【００６４】
(2)-2 活性化処理
つぎに第１プラズマ処理室５２では、活性化処理が行われる。活性化処理には、画素電極１１１における仕事関数の調整、制御、画素電極表面の洗浄、画素電極表面の親液化処理が含まれる。
親液化処理として、大気雰囲気中で酸素を処理ガスとするプラズマ処理（Ｏ₂プラズマ処理）を行う。図７には第１プラズマ処理を模式的に示した図である。図７に示すように、バンク部１１２を含む基板２は加熱ヒータ内臓の試料ステージ５６上に載置され、基板２の上側にはギャップ間隔０．５〜２ｍｍ程度の距離をおいてプラズマ放電電極５７が基板２に対向して配置されている。基板２は、試料ステージ５６によって加熱されつつ、試料ステージ５６は図示矢印方向に向けて所定の搬送速度で搬送され、その間に基板２に対してプラズマ状態の酸素が照射される。
Ｏ₂プラズマ処理の条件は、例えば、プラズマパワー１００〜８００ｋＷ、酸素ガス流量５０〜１００ｍｌ/ｍｉｎ、板搬送速度０．５〜１０ｍｍ／ｓｅｃ、基板温度７０〜９０℃の条件で行われる。なお、試料ステージ５６による加熱は、主として予備加熱された基板２の保温のために行われる。
【００６５】
このＯ₂プラズマ処理により、図８に示すように、画素電極１１１の電極面１１１ａ、無機物バンク層１１２ａの第１積層部１１２ｅ及び有機物バンク層１１２ｂの上部開口部１１２ｄの壁面ならびに上面１１２ｆが親液処理される。この親液処理により、これらの各面に水酸基が導入されて親液性が付与される。
図９では、親液処理された部分を一点鎖線で示している。
なお、このＯ₂プラズマ処理は、親液性を付与するのみならず、上述の通り画素電極であるＩＴＯ上の洗浄，仕事関数の調整も兼ねている。
【００６６】
(2)-3 撥液処理工程
つぎに、第２プラズマ処理室５３では、撥液化工程として、大気雰囲気中でテトラフルオロメタンを処理ガスとするプラズマ処理（ＣＦ₄プラズマ処理）を行う。第２プラズマ処理室５３の内部構造は図７に示した第１プラズマ処理室５２の内部構造と同じである。即ち、基板２は、試料ステージによって加熱されつつ、試料ステージごと所定の搬送速度で搬送され、その間に基板２に対してプラズマ状態のテトラフルオロメタン（四フッ化炭素）が照射される。
ＣＦ₄プラズマ処理の条件は、例えば、プラズマパワー１００〜８００ｋＷ、４フッ化メタンガス流量５０〜１００ｍｌ/ｍｉｎ、基板搬送速度０．５〜１０ｍｍ／ｓｅｃ、基板温度７０〜９０℃の条件で行われる。なお、加熱ステージによる加熱は、第１プラズマ処理室５２の場合と同様に、主として予備加熱された基板２の保温のために行われる。
なお、処理ガスは、テトラフルオロメタン（四フッ化炭素）に限らず、他のフルオロカーボン系のガスを用いることができる。
【００６７】
ＣＦ₄プラズマ処理により、図９に示すように、上部開口部１１２ｄ壁面及び有機物バンク層の上面１１２ｆが撥液処理される。この撥液処理により、これらの各面にフッ素基が導入されて撥液性が付与される。図９では、撥液性を示す領域を二点鎖線で示している。有機物バンク層１１２ｂを構成するアクリル樹脂、ポリイミド樹脂等の有機物はプラズマ状態のフルオロカーボンが照射することで容易に撥液化させることができる。また、Ｏ₂プラズマにより前処理した方がフッ素化されやすい、という特徴を有しており、本実施形態には特に有効である。
尚、画素電極１１１の電極面１１１ａ及び無機物バンク層１１２ａの第１積層部１１２ｅもこのＣＦ₄プラズマ処理の影響を多少受けるが、濡れ性に影響を与える事は少ない。図９では、親液性を示す領域を一点鎖線で示している。
【００６８】
(2)-4 冷却工程
次に冷却工程として、冷却処理室５４を用い、プラズマ処理のために加熱された基板２を管理温度まで冷却する。これは、この以降の工程であるインクジェット工程（液滴吐出工程）の管理温度まで冷却するために行う工程である。
この冷却処理室５４は、基板２を配置するためのプレートを有し、そのプレートは基板２を冷却するように水冷装置が内蔵された構造となっている。
また、プラズマ処理後の基板２を室温、または所定の温度（例えばインクジェット工程を行う管理温度）まで冷却することにより、次の正孔注入／輸送層形成工程において、基板２の温度が一定となり、基板２の温度変化が無い均一な温度で次工程を行うことができる。したがって、このような冷却工程を加えることにより、インクジェット法等の吐出手段により吐出された材料を均一に形成できる。
例えば、正孔注入／輸送層を形成するための材料を含む第１組成物を吐出させる際に、第１組成物を一定の容積で連続して吐出させることができ、正孔注入／輸送層を均一に形成することができる。
【００６９】
上記のプラズマ処理工程では、材質が異なる有機物バンク層１１２ｂ及び無機物バンク層１１２ａに対して、Ｏ₂プラズマ処理とＣＦ₄プラズマ処理とを順次行うことにより、バンク部１１２に親液性の領域と撥液性の領域を容易に設けることができる。
【００７０】
尚、プラズマ処理工程に用いるプラズマ処理装置は、図６に示したものに限られず、例えば図１０に示すようなプラズマ処理装置６０を用いてもよい。
図１０に示すプラズマ処理装置６０は、予備加熱処理室６１と、第１プラズマ処理室６２と、第２プラズマ処理室６３と、冷却処理室６４と、これらの各処理室６１〜６４に基板２を搬送する搬送装置６５とから構成され、各処理室６１〜６４が、搬送装置６５の搬送方向両側（図中矢印方向両側）に配置されてなるものである。
このプラズマ処理装置６０では、図６に示したプラズマ処理装置５０と同様に、バンク部形成工程から搬送された基板２を、予備加熱処理室６１、第１，第２プラズマ処理室６２，６３、冷却処理室６４に順次搬送して各処理室にて上記と同様な処理を行った後、基板２を次の正孔注入／輸送層形成工程に搬送する。
また，上記プラズマ装置は，大気圧下の装置でなくとも，真空下のプラズマ装置を用いても良い。
【００７１】
(3)正孔注入／輸送層形成工程
次に発光素子形成工程では、電極（ここでは画素電極１１１）上に正孔注入／輸送層を形成する。
正孔注入／輸送層形成工程では、液滴吐出としてたとえばインクジェット装置を用いることにより、正孔注入／輸送層形成材料を含む第１組成物（組成物）を電極面１１１ａ上に吐出する。その後に乾燥処理及び熱処理を行い、画素電極１１１上及び無機物バンク層１１２ａ上に正孔注入/輸送層１１０ａを形成する。なお、正孔注入/輸送層１１０ａが形成された無機物バンク層１１２ａをここでは第１積層部１１２ｅという。
この正孔注入／輸送層形成工程を含めこれ以降の工程は、水、酸素の無い雰囲気とする事が好ましい。例えば、窒素雰囲気、アルゴン雰囲気等の不活性ガス雰囲気で行うことが好ましい。
【００７２】
なお、正孔注入/輸送層１１０ａは第１積層部１１２ｅ上に形成されないこともある。すなわち、画素電極１１１上にのみ正孔注入／輸送層が形成される形態もある。
インクジェットによる製造方法は以下の通りである。
図１１に示すように、インクジェットヘッドＨ1に形成されてなる複数のノズルから正孔注入／輸送層形成材料を含む第１組成物を吐出する。ここではインクジェットヘッドを走査することにより各画素毎に組成物を充填しているが、基板２を走査することによっても可能である。更に、インクジェットヘッドと基板２とを相対的に移動させることによっても組成物を充填させることができる。なお、これ以降のインクジェットヘッドを用いて行う工程では上記の点は同様である。
インクジェットヘッドによる吐出は以下の通りである。すなわち、インクジェットヘッドＨ1に形成されてなる吐出ノズルＨ2を電極面１１１ａに対向して配置し、ノズルＨ2から第１組成物を吐出する。画素電極１１１の周囲には下部開口部１１２ｃを区画するバンク１１２が形成されており、この下部開口部１１２ｃ内に位置する画素電極面１１１ａにインクジェットヘッドＨ1を対向させ、このインクジェットヘッドＨ1と基板２とを相対移動させながら、吐出ノズルＨ2から１滴当たりの液量が制御された第１組成物滴１１０ｃを電極面１１１ａ上に吐出する。
【００７３】
ここで用いる第１組成物としては、例えば、ポリエチレンジオキシチオフェン(PEDOT)等のポリチオフェン誘導体とポリスチレンスルホン酸(PSS)等の混合物を、極性溶媒に溶解させた組成物を用いることができる。極性溶媒としては、例えば、イソプロピルアルコール(IPA)、ノルマルブタノール、γ−ブチロラクトン、Ｎ−メチルピロリドン(NMP)、１，３−ジメチル−２−イミダゾリジノン(DMI)及びその誘導体、カルビト−ルアセテート、ブチルカルビト−ルアセテート等のグリコールエーテル類等を挙げることができる。
より具体的な第１組成物の組成としては、PEDOT/PSS混合物(PEDOT/PSS=1:20)：１２．５２重量％、PSS：１．４４重量％、IPA：１０重量％、NMP：２７．４８重量％、DMI：５０重量％のものを例示できる。尚、第１組成物の粘度は２〜２０Ｐｓ程度が好ましく、特に４〜１５ｃＰｓ程度が良い。
上記の第１組成物を用いることにより、吐出ノズルＨ2に詰まりが生じることがなく安定吐出できる。
なお、正孔注入／輸送層形成材料は、赤（Ｒ）、緑（Ｇ）、青（Ｂ）の各発光層１１０ｂ1〜１１０ｂ3に対して同じ材料を用いても良く、各発光層毎に変えても良い。
【００７４】
図１１に示すように、吐出された第１組成物滴１１０ｃは、親液処理された電極面１１１ａ及び第１積層部１１２ｅ上に広がり、下部、上部開口部１１２ｃ、１１２ｄ内に充填される。仮に、第１組成物滴１１０ｃが所定の吐出位置からはずれて上面１１２ｆ上に吐出されたとしても、上面１１２ｆが第１組成物滴１１０ｃで濡れることがなく、はじかれた第１組成物滴１１０ｃが下部、上部開口部１１２ｃ、１１２ｄ内に転がり込む。
【００７５】
電極面１１１ａ上に吐出する第１組成物量は、下部、上部開口部１１２ｃ、１１２ｄの大きさ、形成しようとする正孔注入／輸送層の厚さ、第１組成物中の正孔注入／輸送層形成材料の濃度等により決定される。
また、第１組成物滴１１０ｃは１回のみならず、数回に分けて同一の電極面１１１ａ上に吐出しても良い。この場合、各回における第１組成物の量は同一でも良く、各回毎に第１組成物を変えても良い。更に電極面１１１ａの同一箇所のみならず、各回毎に電極面１１１ａ内の異なる箇所に第１組成物を吐出しても良い。
【００７６】
インクジェットヘッドの構造については、図１４のようなヘッドＨを用いる事ができる。更に、基板とインクジェットヘッドの配置に関しては図１５のように配置することが好ましい。図１４中、符号Ｈ7は前記のインクジェットヘッドＨ1を支持する支持基板であり、この支持基板Ｈ7上に複数のインクジェットヘッドＨ1が備えられている。
インクジェットヘッドＨ1のインク吐出面（基板との対向面）には、ヘッドの長さ方向に沿って列状に、且つヘッドの幅方向に間隔をあけて２列で吐出ノズルが複数（例えば、１列１８０ノズル、合計３６０ノズル）設けられている。また、このインクジェットヘッドＨ1は、吐出ノズルを基板側に向けるとともに、Ｘ軸（またはＹ軸）に対して所定角度傾いた状態で略Ｘ軸方向に沿って列状に、且つＹ方向に所定間隔をあけて２列に配列された状態で平面視略矩形状の支持板２０に複数（図１４では１列６個、合計１２個）位置決めされて支持されている。
また図１５に示すインクジェット装置において、符号１１１５は基板２を載置するステージであり、符号１１１６はステージ１１１５を図中ｘ軸方向（主走査方向）に案内するガイドレールである。またヘッドＨは、支持部材１１１１を介してガイドレール１１１３により図中ｙ軸方向（副主走査方向）に移動できるようになっており、更にヘッドＨは図中θ軸方向に回転できるようになっており、インクジェットヘッドＨ1を主走査方向に対して所定の角度に傾けることができるようになっている。このように、インクジェットヘッドを走査方向に対して傾けて配置することにより、ノズルピッチを画素ピッチに対応させることができる。また、傾き角度調整することにより、どのような画素ピッチに対しても対応させることができる。
【００７７】
図１５に示す基板２は、マザー基板に複数のチップを配置した構造となっている。即ち、１チップの領域が１つの表示装置に相当する。ここでは、３つの表示領域２ａが形成されているが、これに限られるものではない。例えば、基板２上の左側の表示領域２ａに対して組成物を塗布する場合は、ガイドレール１１１３を介してヘッドＨを図中左側に移動させるとともに、ガイドレール１１１６を介して基板２を図中上側に移動させ、基板２を走査させながら塗布を行う。次に、ヘッドＨを図中右側に移動させて基板の中央の表示領域２ａに対して組成物を塗布する。右端にある表示領域２ａに対しても前記と同様である。
尚、図１４に示すヘッドＨ及び図１５に示すインクジェット装置は、正孔注入／輸送層形成工程のみならず、発光層形成工程に用いて良い。
【００７８】
次に、図１２に示すような乾燥工程を行う。乾燥工程を行う事により、吐出後の第１組成物を乾燥処理し、第１組成物に含まれる極性溶媒を蒸発させ、正孔注入／輸送層１１０ａを形成する。
乾燥処理を行うと、第１組成物滴１１０ｃに含まれる極性溶媒の蒸発が、主に無機物バンク層１１２ａ及び有機物バンク層１１２ｂに近いところで起き、極性溶媒の蒸発に併せて正孔注入／輸送層形成材料が濃縮されて析出する。
これにより図１３に示すように、第１積層部１１２ｅ上に、正孔注入／輸送層形成材料からなる周縁部１１０ａ2が形成される。この周縁部１１０ａ2は、上部開口部１１２ｄの壁面（有機物バンク層１１２ｂ）に密着しており、その厚さが電極面１１１ａに近い側では薄く、電極面１１１ａから離れた側、即ち有機物バンク層１１２ｂに近い側で厚くなっている。
【００７９】
また、これと同時に、乾燥処理によって電極面１１１ａ上でも極性溶媒の蒸発が起き、これにより電極面１１１ａ上に正孔注入／輸送層形成材料からなる平坦部１１０ａ1が形成される。電極面１１１ａ上では極性溶媒の蒸発速度がほぼ均一であるため、正孔注入／輸送層の形成材料が電極面１１１ａ上で均一に濃縮され、これにより均一な厚さの平坦部１１０ａが形成される。
このようにして、周縁部１１０ａ2及び平坦部１１０ａ1からなる正孔注入／輸送層１１０ａが形成される。
なお、周縁部１１０ａ2には形成されず、電極面１１１ａ上のみに正孔注入／輸送層が形成される形態であっても構わない。
【００８０】
上記の乾燥処理は、例えば窒素雰囲気中、室温で圧力を例えば１３３．３Ｐａ（１Ｔｏｒｒ）程度にして行う。圧力が低すぎると第１組成物滴１１０ｃが突沸してしまうので好ましくない。また、温度を室温以上にすると、極性溶媒の蒸発速度が高まり、平坦な膜を形成する事ができない。
乾燥処理後は、窒素中、好ましくは真空中で２００℃で１０分程度加熱する熱処理を行うことで、正孔注入／輸送層１１０ａ内に残存する極性溶媒や水を除去することが好ましい。
【００８１】
上記の正孔注入／輸送層形成工程では、吐出された第１組成物滴１１０ｃが、下部、上部開口部１１２ｃ、１１２ｄ内に満たされる一方で、撥液処理された有機物バンク層１１２ｂで第１組成物がはじかれて下部、上部開口部１１２ｃ、１１２ｄ内に転がり込む。これにより、吐出した第１組成物滴１１０ｃを必ず下部、上部開口部１１２ｃ、１１２ｄ内に充填することができ、電極面１１１ａ上に正孔注入／輸送層１１０ａを形成することができる。
【００８２】
(4)発光層形成工程
次に発光層形成工程は、表面改質工程、発光層形成材料吐出工程、および乾燥工程、とからなる。
まず、正孔注入/輸送層１１０ａの表面を表面改質するために表面改質工程を行う。この工程にについては、以下に詳述する。次に、前述の正孔注入/輸送層形成工程と同様、インクジェット法により第２組成物を正孔注入／輸送層１１０ａ上に吐出する。その後、吐出した第２組成物を乾燥処理（及び熱処理）して、正孔注入／輸送層１１０ａ上に発光層１１０ｂを形成する。
【００８３】
発光層形成工程では、正孔注入／輸送層１１０ａの再溶解を防止するために、発光層形成の際に用いる第２組成物の溶媒として、正孔注入／輸送層１１０ａに対して不溶な非極性溶媒を用いる。
しかしその一方で正孔注入／輸送層１１０ａは、非極性溶媒に対する親和性が低いため、非極性溶媒を含む第２組成物を正孔注入／輸送層１１０ａ上に吐出しても、正孔注入／輸送層１１０ａと発光層１１０ｂとを密着させることができなくなるか、あるいは発光層１１０ｂを均一に塗布できないおそれがある。
そこで、非極性溶媒ならびに発光層形成材料に対する正孔注入／輸送層１１０ａの表面の親和性を高めるために、発光層形成の前に表面改質工程を行うことが好ましい。
【００８４】
そこで、表面改質工程について説明する。
表面改質工程は、発光層形成の際に用いる第２組成物の非極性溶媒と同一溶媒またはこれに類する溶媒である表面改質材を、インクジェット法（液滴吐出法）、スピンコート法またはディップ法により正孔注入／輸送層１１０ａ上に塗布した後に乾燥することにより行う。
【００８５】
インクジェット法による塗布は、図１３に示すように、インクジェットヘッドＨ3に、表面改質材を充填し、インクジェットヘッドＨ3に形成された吐出ノズルＨ4から表面改質材を吐出する。前述の正孔注入/輸送層形成工程と同様に、吐出ノズルH4を基板２（すなわち、正孔注入／輸送層１１０ａが形成された基板２）に対向させ、インクジェットヘッドＨ3と基板２とを相対移動させながら、吐出ノズルＨ4から表面改質材１１０ｄを正孔注入／輸送層１１０ａ上に吐出することにより行う。
【００８６】
また、スピンコート法による塗布は、基板２を例えば回転ステージ上に載せ、上方から表面改質材を基板２上に滴下した後、基板２を回転させて表面改質材を基板２上の正孔注入／輸送層１１０ａの全体に広げることにより行う。なお、表面改質材は撥液化処理された上面１１２ｆ上にも一時的に広がるが、回転による遠心力で飛ばされてしまい、正孔注入／輸送層１１０ａ上のみに塗布される。
更にディップ法による塗布は、基板２を例えば表面改質材に浸積させた後に引き上げて、表面改質材を正孔注入／輸送層１１０ａの全体に広げることにより行う。この場合も表面改質材が撥液処理された上面１１２ｆ上に一時的に広がるが、引き上げの際に表面改質材が上面１１２ｆからはじかれて正孔注入／輸送層１１０ａのみに塗布される。
【００８７】
ここで用いる表面改質材としては、第２組成物の非極性溶媒と同一なものとして例えば、シクロへキシルベンゼン、ジハイドロベンゾフラン、トリメチルベンゼン、テトラメチルベンゼン等を例示でき、第２組成物の非極性溶媒に類するものとして例えば、トルエン、キシレン等を例示できる。
特に、インクジェット法により塗布する場合には、ジハイドロベンゾフラン、トリメチルベンゼン、テトラメチルベンゼン、シクロヘキシルベンゼン、またはこれらの混合物，特に第２組成物と同じ溶媒混合物等を用いることが好ましく、スピンコート法またはディップ法による場合は、トルエン、キシレン等が好ましい。
【００８８】
次に、図１６に示すように、塗布領域を乾燥させる。乾燥工程は、インクジェット法で塗布した場合はホットプレート上に基板２を載せて例えば２００℃以下の温度で加熱して乾燥蒸発させることが好ましい。スピンコート法またはディップ法による場合は、基板２に窒素を吹き付けるか、あるいは基板を回転させて基板２表面に気流を発生させることで乾燥させることが好ましい。
【００８９】
尚、表面改質材の塗布を、正孔注入／輸送層入層形成工程の乾燥処理の後に行い、塗布後の表面改質材を乾燥させた後に、正孔注入／輸送層形成工程の熱処理を行っても良い。
【００９０】
このような表面改質工程を行うことで、正孔注入／輸送層１１０ａの表面が非極性溶媒になじみやすくなり、この後の工程で、発光層形成材料を含む第２組成物を正孔注入／輸送層１１０ａに均一に塗布することができる。
【００９１】
尚、上記の表面改質材に、正孔輸送性材料として一般に用いられる前記の化合物２等を溶解して組成物とし、この組成物をインクジェット法により正孔注入／輸送層上に塗布して乾燥させることにより、正孔注入／輸送層上に極薄の正孔輸送層を形成しても良い。
【００９２】
正孔注入／輸送層の大部分は、後の工程で塗布する発光層１１０ｂに溶け込むが、一部が正孔注入／輸送層１１０ａと発光層１１０ｂの間に薄膜状に残存し、これにより正孔注入／輸送層１１０ａと発光層１１０ｂとの間のエネルギー障壁を下げて正孔の移動を容易にし、発光効率を向上させることができる。
【００９３】
次に発光層形成工程として、インクジェット法（液滴吐出法）により、発光層形成材料を含む第２組成物を正孔注入／輸送層１１０ａ上に吐出した後に乾燥処理して、正孔注入／輸送層１１０ａ上に発光層１１０ｂを形成する。
【００９４】
図１７に、インクジェットによる吐出方法を示す。図１７に示すように、インクジェットヘッドＨ5と基板２とを相対的に移動し、インクジェットヘッドに形成された吐出ノズルＨ６から各色（たとえばここでは青色（Ｂ））発光層形成材料を含有する第２組成物が吐出される。
吐出の際には、下部、上部開口部１１２ｃ、１１２ｄ内に位置する正孔注入／輸送層１１０ａに吐出ノズルを対向させ、インクジェットヘッドＨ5と基板２とを相対移動させながら、第２組成物が吐出される。吐出ノズルＨ6から吐出される液量は１滴当たりの液量が制御されている。このように液量が制御された液（第２組成物滴１１０ｅ）が吐出ノズルから吐出され、この第２組成物滴１１０ｅを正孔注入／輸送層１１０ａ上に吐出する。
【００９５】
発光層形成材料としては、［化１］〜［化５］に示すポリフルオレン系高分子誘導体や、（ポリ）パラフェニレンビニレン誘導体、ポリフェニレン誘導体、ポリビニルカルバゾール、ポリチオフェン誘導体、ペリレン係色素、クマリン系色素、ローダミン系色素、あるいは上記高分子に有機ＥＬ材料をドープして用いる事ができる。例えば、ルブレン、ペリレン、９，１０-ジフェニルアントラセン、テトラフェニルブタジエン、ナイルレッド、クマリン６、キナクリドン等をドープすることにより用いることができる。
【００９６】
非極性溶媒としては、正孔注入／輸送層１１０ａに対して不溶なものが好ましく、例えば、シクロへキシルベンゼン、ジハイドロベンゾフラン、トリメチルベンゼン、テトラメチルベンゼン等を用いることができる。
このような非極性溶媒を発光層１１０ｂの第２組成物に用いることにより、正孔注入／輸送層１１０ａを再溶解させることなく第２組成物を塗布できる。
【００９７】
図１７に示すように、吐出された第２組成物１１０ｅは、正孔注入／輸送層１１０ａ上に広がって下部、上部開口部１１２ｃ、１１２ｄ内に満たされる。その一方で、撥液処理された上面１１２ｆでは第１組成物滴１１０ｅが所定の吐出位置からはずれて上面１１２ｆ上に吐出されたとしても、上面１１２ｆが第２組成物滴１１０ｅで濡れることがなく、第２組成物滴１１０ｅが下部、上部開口部１１２ｃ、１１２ｄ内に転がり込む。
【００９８】
各正孔注入／輸送層１１０ａ上に吐出する第２組成物量は、下部、上部開口部１１２ｃ、１１２ｄの大きさ、形成しようとする発光層１１０ｂの厚さ、第２組成物中の発光層材料の濃度等により決定される。
また、第２組成物１１０ｅは１回のみならず、数回に分けて同一の正孔注入／輸送層１１０ａ上に吐出しても良い。この場合、各回における第２組成物の量は同一でも良く、各回毎に第２組成物の液量を変えても良い。更に正孔注入／輸送層１１０ａの同一箇所のみならず、各回毎に正孔注入／輸送層１１０ａ内の異なる箇所に第２組成物を吐出配置しても良い。
【００９９】
次に、第２の組成物を所定の位置に吐出し終わった後、吐出後の第２組成物滴１１０ｅを乾燥処理することにより発光層１１０ｂ３が形成される。すなわち、乾燥により第２組成物に含まれる非極性溶媒が蒸発し、図１８に示すような青色（Ｂ）発光層１１０ｂ3が形成される。なお、図１８においては青に発光する発光層が１つのみ図示されているが、図１やその他の図より明らかなように本来は発光素子がマトリックス状に形成されたものであり、図示しない多数の発光層（青色に対応）が形成されている。
【０１００】
続けて、図１９に示すように、前述した青色（Ｂ）発光層１１０ｂ3の場合と同様の工程を用い、赤色（Ｒ）発光層１１０ｂ1を形成し、最後に緑色（Ｇ）発光層１１０ｂ2を形成する。
なお、発光層１１０ｂの形成順序は、前述の順序に限られるものではなく、どのような順番で形成しても良い。例えば、発光層形成材料に応じて形成する順番を決める事も可能である。
【０１０１】
また、発光層の第２組成物の乾燥条件は、青色１１０ｂ3の場合、例えば、窒素雰囲気中、室温で圧力を１３３．３Ｐａ（１Ｔｏｒｒ）程度として５〜１０分行う条件とする。圧力が低すぎると第２組成物が突沸してしまうので好ましくない。また、温度を室温以上にすると、非極性溶媒の蒸発速度が高まり、発光層形成材料が上部開口部１１２ｄ壁面に多く付着してしまうので好ましくない。
また緑色発光層１１０ｂ2、および赤色発光層ｂ１の場合、発光層形成材料の成分数が多いために素早く乾燥させることが好ましく、例えば、４０℃で窒素の吹き付けを５〜１０分行う条件とするのがよい。
その他の乾燥の手段としては、遠赤外線照射法、高温窒素ガス吹付法等を例示できる。
このようにして、画素電極１１１上に正孔注入／輸送層１１０ａ及び発光層１１０ｂが形成される。
【０１０２】
(5)対向電極（陰極）形成工程
次に対向電極形成工程では、図２０に示すように、発光層１１０ｂ及び有機物バンク層１１２ｂの全面に陰極１２（対向電極）を形成する。なお，陰極１２は複数の材料を積層して形成しても良い。例えば、発光層に近い側には仕事関数が小さい材料を形成することが好ましく、例えばＣａ、Ｂａ等を用いることが可能であり、また材料によっては下層にＬｉＦ等を薄く形成した方が良い場合もある。また、上部側（封止側）には下部側よりも仕事関数が高い材料、例えばＡｌを用いる事もできる。
これらの陰極１２は、例えば蒸着法、スパッタ法、ＣＶＤ法等で形成することが好ましく、特に蒸着法で形成することが、熱による発光層１１０ｂの損傷を防止できる点で好ましい。
また、フッ化リチウムは、発光層１１０ｂ上のみに形成しても良く、更に所定の色に対応して形成する事ができる。例えば、青色（Ｂ）発光層１１０ｂ3上のみに形成しても良い。この場合、他の赤色（Ｒ）発光層及び緑色（Ｇ）発光層１１０ｂ1、１１０ｂ2には、カルシウムからなる上部陰極層１２ｂが接することとなる。
【０１０３】
また陰極１２の上部には、蒸着法、スパッタ法、ＣＶＤ法等により形成したＡｌ膜、Ａｇ膜等を用いることが好ましい。また、その厚さは、例えば１００〜１０００ｎｍの範囲が好ましく、特に２００〜５００ｎｍ程度がよい。
また陰極１２上に、酸化防止のためにＳｉＯ₂、ＳｉＮ等の保護層を設けても良い。
【０１０４】
(6)封止工程
最後に封止工程は、発光素子が形成された基板２と封止基板３ｂとを封止樹脂３ａにより封止する工程である。たとえば、熱硬化樹脂または紫外線硬化樹脂からなる封止樹脂３ａを基板２の全面に塗布し、封止樹脂３ａ上に封止用基板３ｂを積層する。この工程により基板２上に封止部３を形成する。
封止工程は、窒素、アルゴン、ヘリウム等の不活性ガス雰囲気で行うことが好ましい。大気中で行うと、陰極１２にピンホール等の欠陥が生じていた場合にこの欠陥部分から水や酸素等が陰極１２に侵入して陰極１２が酸化されるおそれがあるので好ましくない。
更に、図２に例示した基板５の配線５ａに陰極１２を接続するとともに、駆動ＩＣ６に回路素子部１４の配線を接続することにより、本実施形態の表示装置１が得られる。
【０１０５】
［第２の実施形態］
次に、第１の実施形態の表示装置を備えた電子機器の具体例について説明する。
図２１（ａ）は、携帯電話の一例を示した斜視図である。図２１（ａ）において、符号６００は携帯電話本体を示し、符号６０１は前記の表示装置を用いた表示部を示している。
図２１（ｂ）は、ワープロ、パソコンなどの携帯型情報処理装置の一例を示した斜視図である。図２１（ｂ）において、符号７００は情報処理装置、符号７０１はキーボードなどの入力部、符号７０３は情報処理装置本体、符号７０２は前記の表示装置を用いた表示部を示している。
図２１（ｃ）は、腕時計型電子機器の一例を示した斜視図である。図２１（ｃ）において、符号８００は時計本体を示し、符号８０１は前記の表示装置を用いた表示部を示している。
図２１（ａ）〜（ｃ）に示すそれぞれの電子機器は、前記の第１の実施形態の表示装置を用いた表示部を備えたものであり、先の第１の実施形態の表示装置の特徴を有するので、高輝度であって表示品質に優れた効果を有する電子機器となる。
これらの電子機器を製造するには、第１の実施形態と同様にして、図２に示すような駆動ＩＣ６ａ（駆動回路）を備えた表示装置１を構成し、この表示装置１を、携帯電話、携帯型情報処理装置、腕時計型電子機器に組み込むことにより製造される。
【０１０６】
なお、本発明の技術範囲は上記実施の形態に限定されるものではなく、本発明の趣旨を逸脱しない範囲において種々の変更を加えることが可能である。
図２２には、本発明に係る他の例の表示装置の断面模式図を示す。図２２に示す表示装置は、基板２と、基板２上に形成された表示素子１０と、基板２の周囲に環状に塗布された封止樹脂６０３と、表示素子１０上に備えられた封止部３とを具備して構成されている。
【０１０７】
基板２及び表示素子１０は、第１の実施形態に係る基板２及び表示素子１０と同じものである。表示素子１０は、発光素子部１１と、該発光素子部１１上に形成された陰極１２とを主体として構成されている。
【０１０８】
また図２２に示すように、発光素子部１１上には封止部３が備えられている。この封止部３は、陰極１２上に塗布された熱硬化樹脂あるいは紫外線硬化樹脂等からなる封止樹脂３ａと、封止樹脂３ａ上に配置された封止基板３ｂとからなる。なお、封止樹脂３ａとしては、硬化時にガス、溶媒等が発生しないものが好ましい。
この封止部３は、少なくとも発光素子部１１上にある陰極１２をほぼ覆うように形成されており、陰極１２及び発光素子部１１に対する水又は酸素の侵入を防いで、陰極１２または発光素子部１１内に形成された後述する発光層の酸化を防止する。
尚、封止基板３ｂは、封止樹脂３ａに接合されて封止樹脂３ａを保護するものであり、ガラス板、金属板若しくは樹脂板のいずれかであることが好ましい。
【０１０９】
また図２３には、本発明に係る別の例の表示装置の断面模式図を示す。図２３に示す表示装置は、基板２と、基板２上に形成された表示素子１０と、表示素子１０の全面に塗布された封止樹脂３ａと、封止樹脂３ａ上に備えられた封止用基板３ｂとを具備して構成されている。
【０１１０】
基板２、表示素子１０、封止樹脂３ａ及び封止用基板３ｂは、第１の実施形態に係る基板２、表示素子１０、封止材３及び封止用基板４と同じものである。表示素子１０は、発光素子部１１と、該発光素子部１１上に形成された陰極１２とを主体として構成されている。
【０１１１】
また、図２３に示すように、封止材３と陰極１２の間には保護層７１４が形成されている。保護層７１４は、ＳｉＯ₂、ＳｉＮ等からなるものであり、厚さが１００〜２００ｎｍの範囲とされている。この保護層７１４は、陰極１２及び発光素子部１１に対する水又は酸素の侵入を防いで、陰極１２または発光素子部１１内に形成された図示略の発光層の酸化を防止する。
上記の表示装置によれば、水及び酸素の侵入を効果的に防いで陰極１２または発光層の酸化を防止することにより、表示装置の高輝度化及び長寿命化を図ることができる。
【０１１２】
また、第１の実施形態においては、Ｒ、Ｇ、Ｂの各発光層１１０ｂをストライプ配置した場合について説明したが、本発明はこれに限られず、様々な配置構造を採用しても良い。例えば図２４（ａ）に示すようなストライプ配置の他、図２４（ｂ）に示すようなモザイク配置や、図２４（ｃ）に示すようなデルタ配置とすることができる。
【０１１３】
【発明の効果】
以上、詳細に説明したように、本発明の表示装置の製造方法によれば、正孔注入／輸送層形成工程と発光層形成工程の間に、前記正孔注入／輸送層の表面に表面改質材を塗布した後に乾燥する表面改質工程を設けることにより、正孔注入／輸送層の非極性溶媒に対する親和性を向上させることができるので、発光層形成用の第２組成物を均一に塗布することができる。
これにより、発光層を正孔注入／輸送層上に均一に形成することができるとともに、発光層と正孔注入／輸送層との密着性を向上することができる。
【図面の簡単な説明】
【図１】 本発明の第１の実施形態の表示装置の配線構造の平面模式図である。
【図２】 本発明の第１の実施形態の表示装置を示す図であって、（ａ）は表示装置の平面模式図であり、（ｂ）は（ａ）のＡＢ線に沿う断面模式図である。
【図３】 本発明の第１の実施形態の表示装置の要部を示す図である。
【図４】 本発明の第１の実施形態の表示装置の製造方法を説明する工程図である。
【図５】 本発明の第１の実施形態の表示装置の製造方法を説明する工程図である。
【図６】 本発明の第１の実施形態の表示装置の製造に用いるプラズマ処理装置の一例を示す平面模式図である。
【図７】 図６に示したプラズマ処理装置の第１プラズマ処理室の内部構造を示す模式図である。
【図８】 本発明の第１の実施形態の表示装置の製造方法を説明する工程図である。
【図９】 本発明の第１の実施形態の表示装置の製造方法を説明する工程図である。
【図１０】 本発明の第１の実施形態の表示装置の製造に用いるプラズマ処理装置の別の例を示す平面模式図である。
【図１１】 本発明の第１の実施形態の表示装置の製造方法を説明する工程図である。
【図１２】 本発明の第１の実施形態の表示装置の製造方法を説明する工程図である。
【図１３】 本発明の第１の実施形態の表示装置の製造方法を説明する工程図である。
【図１４】 本発明の第１の実施形態の表示装置を製造する際に用いるヘッドを示す平面図である。
【図１５】 本発明の第１の実施形態の表示装置を製造する際に用いるインクジェット装置を示す平面図である。
【図１６】 本発明の第１の実施形態の表示装置の製造方法を説明する工程図である。
【図１７】 本発明の第１の実施形態の表示装置の製造方法を説明する工程図である。
【図１８】 本発明の第１の実施形態の表示装置の製造方法を説明する工程図である。
【図１９】 本発明の第１の実施形態の表示装置の製造方法を説明する工程図である。
【図２０】 本発明の第１の実施形態の表示装置の製造方法を説明する工程図である。
【図２１】 本発明の第２の実施形態である電子機器を示す斜視図である。
【図２２】 本発明に係る他の例の表示装置を示す断面模式図である。
【図２３】 本発明に係る別の例の表示装置を示す断面模式図である。
【図２４】 発光層の配置を示す平面模式図であって、（ａ）がストライプ配置、（ｂ）がモザイク配置、（ｃ）がデルタ配置を示す図である。
【図２５】 従来の表示装置の要部を示す断面図である。
【符号の説明】
１ 表示装置
２ 基板
２ａ 表示領域
２ｂ 非表示領域
３ 封止部
６ａ 駆動ＩＣ（駆動回路）
１０ 表示素子
１１ 発光素子部
１２ 陰極（（対向電極（発光素子））
１１０ 機能層（発光素子）
１１０ａ 正孔注入／輸送層（機能層）
１１０ａ1 平坦部
１１０ａ2 周縁部
１１０ｂ 発光層（機能層）
１１１ 画素電極（（電極）発光素子）
１１１ａ 電極面
１１２ バンク部
１１２ａ 第１バンク層（無機物バンク層）
１１２ｂ 第２バンク層（有機物バンク層）
１１２ｃ 下部開口部（無機物バンク層側の開口部（壁面））
１１２ｄ 上部開口部（有機物バンク層側の開口部（壁面））
１１２ｅ 上面（無機物バンク層の上面）
１１２ｆ 上面（有機物バンク層の上面）
１１２ｇ 開口部
Ａ 画素領域[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a method for manufacturing a display device.
[0002]
[Prior art]
In recent years, a light emitting material such as an organic fluorescent material is converted into an ink, and a method of patterning the light emitting material by an ink jet method in which the ink (composition) is ejected onto a substrate is employed. A color display device having a structure in which a light emitting layer made of a material is sandwiched, in particular, an organic EL (electroluminescence) display device using an organic light emitting material as a light emitting material has been developed.
Therefore, a conventional display device (organic EL display device) will be described with reference to the drawings.
[0003]
FIG. 25 is a schematic cross-sectional view showing a main part of a conventional display device.
The display device illustrated in FIG. 25 is configured by sequentially stacking an element portion 811 and a cathode 812 on a substrate 802. In addition, a circuit element portion 814 is provided between the element portion 811 and the substrate 802.
In this conventional display device, light emitted from the light emitting element 910 provided in the element portion 811 to the substrate 802 side passes through the circuit element portion 814 and the substrate 802 and is below the substrate 802 (observer side). In addition, the light emitted from the light emitting element 910 to the opposite side of the substrate 802 is reflected by the cathode 812, passes through the circuit element portion 814 and the substrate 802, and is emitted to the lower side (observer side) of the substrate 802. It has come to be.
[0004]
The circuit element portion 814 is formed by sequentially laminating a transparent base film 814, a transparent gate insulating film 942, a transparent first interlayer insulating film 944, and a second interlayer insulating film 947 on the substrate 802. Is provided with an island-shaped silicon film 941, and a gate electrode 943 (scanning line) is provided over the gate insulating film 942. The silicon film 941 is provided with a channel region (not shown) and a drain region and a source region sandwiching the channel region, and the gate electrode 943 is provided at a position corresponding to the channel region of the silicon film 941. Further, a pixel electrode 911 (anode) patterned in a substantially rectangular shape in plan view is stacked on the second interlayer insulating film 947. Contact holes 945 and 946 are formed so as to penetrate the first and second interlayer insulating films 844 and 847. One contact hole 945 connects a source region (not shown) of the silicon film 941 to the pixel electrode 911. The other contact hole 146 is connected to the power supply line 948. In this manner, the driving thin film transistor 913 connected to each pixel electrode 911 is formed in the circuit element portion 814.
[0005]
The element unit 811 mainly includes a light emitting element 910 stacked on each of the plurality of pixel electrodes 911... And a bank unit 912 provided between each pixel electrode 911 and each light emitting element 910 to partition each light emitting element 910. It is configured as.
[0006]
The bank portion 912 is formed until it rides on the peripheral edge of the pixel electrode 911, so that an opening 912c corresponding to the formation position of the pixel electrode 911 is provided. The bank portion 912 is made of a liquid repellent resin such as a fluororesin, or CF _Four When a composition ink (composition) containing an organic EL material is ejected as ink droplets from an ink jet head, it is formed of a resin whose surface has been fluorinated by plasma treatment or the like to impart liquid repellency. Due to the liquid repellency of the portion 912, the droplet is patterned in the opening 912c.
[0007]
The light emitting element 910 includes a hole injection / transport layer 910a formed on the pixel electrode 911 and a light emitting layer 910b disposed adjacent to the hole injection / transport layer 910a.
The hole injection / transport layer 910 a is obtained by discharging and drying a composition containing a hole injection / transport layer forming material on the pixel electrode 911.
[0008]
The cathode 812 is formed over the entire surface of the element portion 811 and plays a role of injecting electrons into the light emitting element 910 in a pair with the pixel electrode 911. The cathode 912 is formed of a plurality of layers. For example, a metal having a low work function such as lithium fluoride, calcium, Mg, Ag, or Ba is generally used.
[0009]
In the above display device, for example, after the patterned bank portion 912 is formed on the circuit element portion 814, the composition containing the hole injection / transport layer forming material is discharged and dried into the opening portion 912c of the bank portion 912. Then, the hole injection / transport layer 910a is formed, and the light emitting layer 910b is formed on the hole injection / transport layer 910a by discharging and drying the composition containing the light emitting layer forming material. Finally, the bank portion 912 is formed. In addition, a cathode 812 is stacked on the light emitting layer 910b.
[0010]
[Problems to be solved by the invention]
However, in the conventional method for manufacturing a display device, a polar solvent is used as a solvent for the composition containing the hole injection / transport layer forming material, and a nonpolar solvent is used for the composition containing the light emitting layer forming material. Since there are many cases, the affinity of the hole injection / transport layer to the nonpolar solvent is low, and when the composition of the light emitting layer containing the nonpolar solvent is discharged onto the hole injection / transport layer, In some cases, the light emitting layer could not be uniformly formed on the hole injection / transport layer.
In addition, even if the light emitting layer can be formed uniformly on the hole injection / transport layer, the adhesion between the light emitting layer and the hole injection / transport layer may be low, and the light emission efficiency of the light emitting layer is reduced. There was a case.
[0011]
The present invention has been made in view of the above circumstances, and is formed by improving the wettability of the hole injection / transport layer with respect to a nonpolar solvent and uniformly and closely adhering the light emitting layer on the hole injection / transport layer. It is an object of the present invention to provide a method for manufacturing a display device that can be used.
[0012]
[Problems to be solved by the invention]
In order to achieve the above object, the present invention employs the following configuration.
The method for manufacturing a display device according to the present invention is a method for manufacturing a display device in which a functional layer is formed on each of a plurality of electrodes formed on a substrate, and a bank portion is provided between the plurality of functional layers. A bank part forming step of forming the bank part so that a part of each of the plurality of electrodes overlaps, and a lyophilic process for treating at least a part of each of the plurality of electrodes to be lyophilic A first composition comprising: a step, a liquid repellency step for treating the surface of a part of the bank part with a liquid repellency; a hole injection / transport layer forming material; and a polar solvent; A hole injection / transport layer forming step of forming a hole injection / transport layer by drying, and applying a first nonpolar solvent to the surface of the hole injection / transport layer, and then injecting / transporting the hole Surface modification step for surface modification of the surface of the layer, and after the surface modification step, A light emitting layer forming step of forming a light emitting layer by discharging a second composition containing a light emitting layer forming material and a second nonpolar solvent on the hole injecting / transporting layer, and drying the second composition; A counter electrode forming step of forming a counter electrode on the light emitting layer.
Further, the first nonpolar solvent is the same solvent as the second nonpolar solvent or a solvent similar to the second nonpolar solvent.
Further, the first nonpolar solvent is any one of cyclohexylbenzene, dihydrobenzofuran, trimethylbenzene, tetramethylbenzene, toluene, xylene, or a mixture thereof.
The bank portion is formed of a first bank layer and a second bank layer, and the first bank layer is formed so as to overlap a part of the electrode.
Further, the first bank layer is made of SiO. ₂ TiO ₂ It is formed from either of these.
The second bank layer is made of either acrylic resin or polyimide resin.
The display device manufacturing method of the present invention is a method for manufacturing a display device in which a plurality of light emitting elements are formed on one surface of a substrate, and a bank portion is provided between the plurality of light emitting elements. A first step of forming the bank part on the substrate, and a hole injection / transport by applying a first composition containing a hole injection / transport layer forming material and a polar solvent to a region surrounded by the bank. A second step of forming a layer, and a third composition for forming a light emitting layer by applying a second composition containing a first nonpolar solvent on the surface of the hole injection / transport layer opposite to the substrate. And a third composition comprising a second nonpolar solvent on the surface of the hole injection / transport layer opposite to the substrate between the second step and the third step. It has the 4th process of apply | coating.
The first composition may include a mixture of a polythiophene derivative and polystyrene sulfonic acid.
Further, the third composition includes the same material as the hole transporting material contained in the first composition.
The second nonpolar solvent may be the same solvent as the first nonpolar solvent or a solvent similar to the first nonpolar solvent.
Further, the second nonpolar solvent is any one of cyclohexylbenzene, dihydrobenzofuran, trimethylbenzene, tetramethylbenzene, toluene, xylene, or a mixture thereof.
Further, the bank part is formed of a first bank layer and a second bank layer, and the first bank layer is made of SiO. ₂ TiO ₂ The second bank layer is formed of either an acrylic resin or a polyimide resin.
The display device manufacturing method of the present invention is a display device in which a light emitting element having a light emitting layer and a hole injection / transport layer formed on either side of the light emitting layer is formed on a substrate. A first step of applying a first composition containing a polar solvent to form the hole injection / transport layer; and applying a second composition containing a first nonpolar solvent. A second step of forming the light emitting layer, and a second non-between surface of the hole injection / transport layer facing any of the surfaces between the first step and the second step. It has the 3rd process of apply | coating the 3rd composition containing a polar solvent, It is characterized by the above-mentioned.
The second nonpolar solvent may be the same solvent as the first nonpolar solvent or a solvent similar to the first nonpolar solvent.
Further, the third composition includes the same material as the hole transporting material contained in the first composition.
The second nonpolar solvent is any one of cyclohexylbenzene, dihydrobenzofuran, trimethylbenzene, tetramethylbenzene, toluene, and xylene.
The display device of the present invention is manufactured by any of the above-described display device manufacturing methods.
In the electronic device manufacturing method of the present invention, a functional layer is formed on each of the plurality of electrodes formed on the substrate of the present invention, and a bank portion is provided between the plurality of functional layers. And a drive circuit for driving the display device, wherein the bank portion is formed so as to partially overlap each of the plurality of electrodes. A bank portion forming step, a lyophilic step of processing at least a part of each of the plurality of electrodes to be lyophilic, a lyophobic step of processing the surface of the bank portion to be lyophobic, and hole injection / Hole injection / transport layer forming step of forming a hole injection / transport layer by discharging a first composition containing a transport layer forming material and a polar solvent and drying the first composition; A first nonpolar solvent is applied to the surface of the hole injection / transport layer, and the positive A surface modification step for modifying the surface of the injection / transport layer; and a second light-emitting layer forming material and a second nonpolar solvent on the hole injection / transport layer after the surface modification step. A light emitting layer forming step of forming a light emitting layer by discharging the composition and drying the second composition; and a counter electrode forming step of forming a counter electrode on the light emitting layer. It is characterized by.
The electronic device manufacturing method according to the present invention includes a display device in which a plurality of light emitting elements are formed on one surface of a substrate and a bank portion is provided between the light emitting elements, and the display device is driven. And a driving circuit for performing the first step of forming the bank portion at a predetermined position of the substrate, and a hole injection / A second step of forming a hole injection / transport layer by applying a first composition comprising a transport layer forming material and a polar solvent; and on the opposite side of the hole injection / transport layer from the substrate, And a third step of forming a light emitting layer by applying a second composition containing a first nonpolar solvent, and the hole injection / transport between the second step and the third step Having a fourth step of applying a third composition containing a second nonpolar solvent on the surface of the layer opposite to the substrate And features.
Also, in the method for manufacturing an electronic device of the present invention, a light emitting element having a light emitting layer and a hole injection / transport layer formed on either side of the light emitting layer is formed in a matrix on a substrate. And a driving circuit for driving the display device, wherein the hole injection / transport is performed by applying a first composition containing a polar solvent. A first step of forming a layer, and a second step of forming the light emitting layer by applying a second composition containing a first non-polar solvent, the first step and the second step There is a third step of applying a third composition containing a second non-polar solvent to the surface of the hole injection / transport layer facing one of the surfaces.
An electronic device according to the present invention is manufactured by any one of the above-described methods for manufacturing an electronic device.
In the display device manufacturing method of the present invention, a functional layer is formed on each of a plurality of electrodes formed on a substrate, and a bank unit is provided between the functional layers. A bank part forming step for forming the bank part so as to overlap with a part of the electrode, a lyophilic process for treating at least a part of the electrode to be lyophilic, and one of the bank parts. A liquid repellent step for making the surface of the liquid repellent, a first composition containing a hole injecting / transporting layer forming material, and drying the first composition to form a hole injecting / transporting layer. A hole injection / transport layer forming step to be formed, a surface modification step of applying a surface modifier to the surface of the hole injection / transport layer, and surface modifying the surface of the hole injection / transport layer; Discharging a second composition containing a light emitting layer forming material and drying the second composition; Ri is a light-emitting layer forming step of forming a light emitting layer, a counter electrode forming step of forming a counter electrode on the light emitting layer, characterized by comprising comprises a.
In the present invention, the functional layer includes at least a hole injection / transport layer and a light emitting layer.
[0013]
According to the display device manufacturing method, a surface modification step of applying a surface modifier to the surface of the hole injection / transport layer is provided between the hole injection / transport layer formation step and the light emitting layer formation step. As a result, the wettability of the hole injection / transport layer with respect to the second composition can be improved, so that the second composition can be applied uniformly.
Thereby, the light emitting layer can be uniformly formed on the hole injection / transport layer, and the adhesion between the light emitting layer and the hole injection / transport layer can be improved.
[0014]
In the method for manufacturing a display device of the present invention, the surface modifying material is made of a nonpolar solvent or a material similar to a nonpolar solvent.
Furthermore, in the method for producing a display device of the present invention, the surface modifier is a solvent used in an ink composition containing toluene, xylene or a light emitting material, and is selected from cyclohexylbenzene, dihydrobenzofuran, trimethylbenzene, and tetramethylbenzene. Or a mixture thereof.
[0015]
The display device manufacturing method of the present invention is the display device manufacturing method described above, wherein the bank portion is formed of a first bank layer and a second bank layer, and the first bank layer is the electrode. It is formed so that it may overlap with a part of.
In the display device manufacturing method of the present invention, the first bank layer is made of SiO. ₂ TiO ₂ It is preferable that it is formed from either of these.
In the method for manufacturing a display device of the present invention, it is preferable that the second bank layer is made of an organic material having excellent heat and solvent resistance such as acrylic resin and polyimide resin.
[0016]
Next, a method for manufacturing a display device according to the present invention is a method for manufacturing a display device in which a plurality of light emitting elements are formed on a substrate, and a bank portion is provided between the light emitting elements. A bank portion forming step for forming the bank portion at a predetermined position; a hole injection / transport layer forming step for forming a hole injection / transport layer in a region surrounded by the bank; and the hole injection / transport layer. A surface modification step for modifying the surface of the substrate with a surface modifying material, a light emitting layer forming step for forming a light emitting layer on the hole injection / transport layer, and a counter electrode for forming a counter electrode on the light emitting layer An electrode forming step.
In the present invention, the light emitting element includes at least an electrode formed on a substrate, a functional layer formed adjacent to the electrode, and a counter electrode formed adjacent to the functional layer. The functional layer includes at least a hole injection / transport layer and a light emitting layer.
[0017]
Moreover, the manufacturing method of the display apparatus of this invention is a manufacturing method of the display apparatus as described above, and the said positive hole injection / transport layer contains the 1st composition which contains a positive hole injection / transport layer forming material in the said board | substrate. It is formed by discharging.
The display device manufacturing method of the present invention is the display device manufacturing method described above, wherein the light emitting layer is formed by discharging a second composition containing a light emitting layer forming material onto the substrate. Features.
[0018]
The display device manufacturing method of the present invention is the display device manufacturing method described above, wherein the surface modifier is made of a nonpolar solvent or a material similar to a nonpolar solvent.
In the display device manufacturing method of the present invention, the surface modifying material is any one of cyclohexylbenzene, dihydrobenzofuran, trimethylbenzene, tetramethylbenzene, toluene, xylene, or a mixture thereof. Is preferred.
The display device manufacturing method of the present invention is the display device manufacturing method described above, wherein the bank portion is formed of a first bank layer and a second bank layer, and the first bank layer is the electrode. It is formed so that it may overlap with a part of.
[0019]
Next, the display device manufacturing method of the present invention is the display device manufacturing method described above, and includes a light emitting layer and a hole injection / transport layer formed adjacent to the light emitting layer. Is a method of manufacturing a display device formed on a substrate, wherein the functional layer surface is modified after the hole injection / transport layer is formed.
[0020]
The display device manufacturing method of the present invention is the above-described display device manufacturing method, wherein the hole injection / transport layer surface is modified by applying a surface modifier to the surface of the hole injection / transport layer. It is characterized in that it is carried out by drying after coating.
The display device manufacturing method of the present invention is the above-described display device manufacturing method, wherein the surface modifying material for modifying the hole injection / transport layer surface is a nonpolar solvent or a nonpolar solvent. It is made of a material similar to the above.
In the method for manufacturing a display device of the present invention, the surface modifier is preferably any one of cyclohexylbenzene, dihydrobenzofuran, trimethylbenzene, tetramethylbenzene, toluene, and xylene.
[0021]
Next, the display device of the present invention is manufactured by the method for manufacturing a display device according to any one of the above.
[0022]
Next, a method for manufacturing an electronic device according to the present invention is a method for manufacturing a display device as described above, in which a functional layer is formed on each of a plurality of electrodes formed on a substrate, and between each functional layer. A method of manufacturing an electronic apparatus comprising: a display device provided with a bank portion; and a drive circuit for driving the display device, wherein the bank portion overlaps with a part of the electrode. Forming a bank part, a lyophilic process for processing at least a portion of the electrode to be lyophilic, a lyophobic process for processing the surface of the bank part to be lyophobic, and a hole injection / transport layer A hole injection / transport layer forming step of forming a hole injection / transport layer by discharging a first composition containing a forming material and drying the first composition; Apply a surface modifier on the surface to modify the surface of the hole injection / transport layer. A surface modification step, a light emitting layer forming step of discharging a second composition containing a light emitting layer forming material and drying the second composition to form a light emitting layer; and a counter electrode on the light emitting layer. And a counter electrode forming step to be formed.
The electronic device manufacturing method of the present invention includes a display device in which a functional layer is formed on each of a plurality of electrodes formed on a substrate, and a bank unit is provided between the functional layers; And a driving circuit for driving the display device, comprising: a bank part forming step for forming the bank part at a predetermined position of the substrate; and a portion between the bank part. A hole injection / transport layer forming step for forming a hole injection / transport layer, a surface modifying material is applied to the surface of the hole injection / transport layer, and the surface of the hole injection / transport layer is modified. A surface modification step, a light emitting layer forming step of forming a light emitting layer on the hole injection / transport layer, and a counter electrode forming step of forming a counter electrode on the light emitting layer. Features.
[0023]
The electronic device manufacturing method according to the present invention includes a display device in which light emitting elements each having a light emitting layer and a hole injection / transport layer formed adjacent to the light emitting layer are formed in a matrix on a substrate. And a driving circuit for driving the display device, wherein after the hole injection / transport layer is formed, the surface of the hole injection / transport layer is modified. It is characterized by quality.
[0024]
Next, an electronic device according to the present invention is manufactured by the method for manufacturing an electronic device described above.
[0025]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, embodiments of the present invention will be described with reference to the drawings. 1 to 23, the scale of each layer and each member is shown to be different from the actual scale so that each layer and each member can be recognized on the drawings.
[0026]
[First Embodiment]
A first embodiment of the present invention will be described below with reference to the drawings.
FIG. 1 shows a schematic plan view of the wiring structure of the display device of this embodiment, and FIG. 2 shows a schematic plan view and a cross-sectional schematic diagram of the display device of this embodiment.
[0027]
As shown in FIG. 1, the display device 1 of the present embodiment includes a plurality of scanning lines 101, a plurality of signal lines 102 extending in a direction intersecting the scanning lines 101, and a plurality of signal lines 102 extending in parallel with the signal lines 102. The power source line 103 is wired and the pixel region A is provided near each intersection of the scanning line 101 and the signal line 102.
[0028]
Connected to the signal line 102 is a data side driving circuit 104 including a shift register, a level shifter, a video line, and an analog switch. Further, a scanning side driving circuit 105 including a shift register and a level shifter is connected to the scanning line 101.
Further, in each of the pixel regions A, a switching thin film transistor 112 to which a scanning signal is supplied to the gate electrode via the scanning line 101 and a pixel signal shared from the signal line 102 via the switching thin film transistor 112. A storage capacitor cap that holds the pixel signal, a driving thin film transistor 123 to which a pixel signal held by the storage capacitor cap is supplied to the gate electrode, and the power supply line 103 via the driving thin film transistor 123 A pixel electrode (electrode) 111 into which a driving current flows from the power line 103 and a functional layer 110 sandwiched between the pixel electrode 111 and the cathode (counter electrode) 12 are provided. The electrode 111, the counter electrode 12, and the functional layer 110 constitute a light emitting element.
[0029]
According to such a configuration, when the scanning line 101 is driven and the switching thin film transistor 112 is turned on, the potential of the signal line 102 at that time is held in the holding capacitor cap, and the holding capacitor cap is driven according to the state. The on / off state of the thin film transistor 123 is determined. Then, a current flows from the power supply line 103 to the pixel electrode 111 through the channel of the driving thin film transistor 123, and further a current flows to the cathode 12 through the functional layer 110. The functional layer 110 emits light according to the amount of current flowing through it.
[0030]
Next, as shown in FIGS. 2A and 2B, the display device 1 according to the present embodiment includes a transparent substrate 2 made of glass or the like and light emitting elements arranged in a matrix. The light emitting element part 11 formed on 2 and the cathode 12 formed on the light emitting element part 11 are comprised. The light emitting element portion 11 and the cathode 12 constitute a display element 10.
The substrate 2 is a transparent substrate such as glass, for example, and is partitioned into a display region 2a located at the center of the substrate 2 and a non-display region 2b located at the periphery of the substrate 2 and surrounding the display region 2a.
The display area 2a is an area formed by light emitting elements arranged in a matrix, and a non-display area 2b is formed outside the display area. In the non-display area 2b, a dummy display area 2d adjacent to the display area 2a is formed.
Further, as shown in FIG. 2B, a circuit element unit 14 is provided between the light emitting element unit 11 and the substrate 2, and the above-described scanning line, signal line, storage capacitor, and switching circuit are provided in the circuit element unit 14. Thin film transistors, a driving thin film transistor 123, and the like.
Further, one end of the cathode 12 is connected to the cathode wiring 12 a formed on the substrate 2 from the light emitting element portion 11, and one end 12 b of this wiring is connected to the wiring 5 a on the flexible substrate 5. Yes. Further, the wiring 5 a is connected to a driving IC 6 (driving circuit) provided on the flexible substrate 5.
[0031]
Further, as shown in FIGS. 2A and 2B, the above-described power supply lines 103 (103R, 103G, and 103B) are wired in the non-display area 2b of the circuit element unit.
Further, the above-described scanning side drive circuits 105 and 105 are arranged on both sides of the display area 2a in FIG. 2A. The scanning side drive circuits 105 and 105 are provided in the circuit element portion 14 below the dummy region 2d. Further, in the circuit element section 14, a drive circuit control signal line 105a and a drive circuit power supply line 105b connected to the scanning side drive circuits 105 and 105 are provided.
Further, an inspection circuit 106 is disposed above the display area 2a in FIG. The inspection circuit 106 can inspect the quality and defects of the display device during manufacturing or at the time of shipment.
[0032]
Further, as shown in FIG. 2B, the sealing portion 3 is provided on the light emitting element portion 11. The sealing portion 3 includes a sealing resin 3 a applied to the substrate 2 and a sealing can 604. The sealing resin 603 is made of a thermosetting resin, an ultraviolet curable resin, or the like, and is particularly preferably made of an epoxy resin that is a kind of thermosetting resin.
The sealing resin 603 is annularly applied around the substrate 2 and is applied by, for example, a microdispenser. The sealing resin 603 joins the substrate 2 and the sealing can 604, prevents water or oxygen from entering the sealing can 604 from between the substrate 2 and the sealing can 604, and prevents the cathode 12 or light emission. Oxidation of a light emitting layer (not shown) formed in the element portion 11 is prevented.
The sealing can 604 is made of glass or metal, and is bonded to the substrate 2 via a sealing resin 603, and a concave portion 604 a that houses the display element 10 is provided inside thereof. In addition, a getter agent 605 that absorbs water, oxygen, or the like is attached to the recess 604a so that water or oxygen that has entered the inside of the sealing can 604 can be absorbed. The getter agent 605 may be omitted.
[0033]
Next, FIG. 3 shows an enlarged view of the cross-sectional structure of the display region in the display device. In FIG. 3, three pixel regions A are shown. The display device 1 is configured by sequentially laminating a circuit element unit 14 in which a circuit such as a TFT is formed, a light emitting element unit 11 in which a functional layer 110 is formed, and a cathode 12 on a substrate 2.
In this display device 1, light emitted from the functional layer 110 to the substrate 2 side is transmitted through the circuit element unit 14 and the substrate 2 and emitted to the lower side (observer side) of the substrate 2, and the functional layer 110. The light emitted from the opposite side of the substrate 2 is reflected by the cathode 12, passes through the circuit element unit 14 and the substrate 2, and is emitted to the lower side (observer side) of the substrate 2.
Note that light emitted from the cathode side can be emitted by using a transparent material as the cathode 12. As the transparent material, ITO, Pt, Ir, Ni, or Pd can be used. The film thickness is preferably about 75 nm and more preferably less than this film thickness.
[0034]
In the circuit element portion 14, a base protective film 2c made of a silicon oxide film is formed on the substrate 2, and an island-shaped semiconductor film 141 made of polycrystalline silicon is formed on the base protective film 2c. In the semiconductor film 141, a source region 141a and a drain region 141b are formed by high concentration P ion implantation. A portion where P is not introduced is a channel region 141c.
Further, a transparent gate insulating film 142 that covers the base protective film 2c and the semiconductor film 141 is formed in the circuit element portion 14, and a gate electrode 143 made of Al, Mo, Ta, Ti, W, or the like is formed on the gate insulating film 142. (Scanning line 101) is formed, and transparent first interlayer insulating film 144a and second interlayer insulating film 144b are formed on gate electrode 143 and gate insulating film 142. The gate electrode 143 is provided at a position corresponding to the channel region 141c of the semiconductor film 141. In addition, contact holes 145 and 146 are formed through the first and second interlayer insulating films 144a and 144b and connected to the source and drain regions 141a and 141b of the semiconductor film 141, respectively.
On the second interlayer insulating film 144b, a transparent pixel electrode 111 made of ITO or the like is formed by patterning into a predetermined shape, and one contact hole 145 is connected to the pixel electrode 111.
The other contact hole 146 is connected to the power supply line 103.
In this way, the driving thin film transistor 123 connected to each pixel electrode 111 is formed in the circuit element unit 14.
The circuit element unit 14 is also formed with the storage capacitor cap and the switching thin film transistor 112 described above, but these are not shown in FIG.
[0035]
Next, as shown in FIG. 3, the light emitting element unit 11 includes a functional layer 110 stacked on each of the plurality of pixel electrodes 111... And a functional layer provided between each pixel electrode 111 and the functional layer 110. The bank unit 112 that divides 110 is mainly configured. A cathode 12 is disposed on the functional layer 110. The pixel electrode 111, the functional layer 110, and the cathode 12 constitute a light emitting element.
Here, the pixel electrode 111 is made of, for example, ITO, and is formed by patterning into a substantially rectangular shape in plan view. The thickness of the pixel electrode 111 is preferably in the range of 50 to 200 nm, particularly about 150 nm. A bank 112 is provided between the pixel electrodes 111.
[0036]
As shown in FIG. 3, the bank unit 112 includes an inorganic bank layer 112 a (first bank layer) positioned on the substrate 2 side and an organic bank layer 112 b (second bank layer) positioned away from the substrate 2. Configured.
[0037]
The inorganic bank layer and the organic bank layer (112 a, 112 b) are formed so as to ride on the peripheral edge of the pixel electrode 111. In plan view, the periphery of the pixel electrode 111 and the inorganic bank layer 112a are arranged so as to overlap in plan view. The same applies to the organic bank layer 112b, and the organic bank layer 112b is disposed so as to overlap a part of the pixel electrode 111 in a planar manner. The inorganic bank layer 112a is further formed on the center side of the pixel electrode 111 than the organic bank layer 112b. In this manner, each first stacked portion 112e of the inorganic bank layer 112a is formed inside the pixel electrode 111, so that a lower opening 112c corresponding to the formation position of the pixel electrode 111 is provided.
An upper opening 112d is formed in the organic bank layer 112b. The upper opening 112d is provided so as to correspond to the formation position of the pixel electrode 111 and the lower opening 112c. As shown in FIG. 3, the upper opening 112d is wider than the lower opening 112c and narrower than the pixel electrode 111. In some cases, the upper position of the upper opening 112d and the end of the pixel electrode 111 are substantially the same position. In this case, as shown in FIG. 3, the cross section of the upper opening 112d of the organic bank layer 112b is inclined.
In the bank portion 112, an opening 112g penetrating the inorganic bank layer 112a and the organic bank layer 112b is formed by communicating the lower opening 112c and the upper opening 112d.
[0038]
The inorganic bank layer 112a is made of, for example, SiO. ₂ TiO ₂ It is preferable that it consists of inorganic materials, such as. The film thickness of the inorganic bank layer 112a is preferably in the range of 50 to 200 nm, particularly 150 nm. If the film thickness is less than 50 nm, the inorganic bank layer 112a is thinner than the hole injection / transport layer described later, and the flatness of the hole injection / transport layer cannot be ensured. On the other hand, if the film thickness exceeds 200 nm, a step due to the lower opening 112c becomes large, and it is not preferable because the flatness of a light emitting layer described later stacked on the hole injection / transport layer cannot be secured.
[0039]
Further, the organic bank layer 112b is formed of a resist having heat resistance and solvent resistance such as acrylic resin and polyimide resin. The thickness of the organic bank layer 112b is preferably in the range of 0.1 to 3.5 μm, and particularly preferably about 2 μm. If the thickness is less than 0.1 μm, the organic bank layer 112b becomes thinner than the total thickness of the hole injection / transport layer and the light emitting layer, which will be described later, and the light emitting layer may overflow from the upper opening 112d. On the other hand, if the thickness exceeds 3.5 μm, the step due to the upper opening 112d becomes large, and step coverage of the cathode 12 formed on the organic bank layer 112b cannot be secured. Further, if the thickness of the organic bank layer 112b is 2 μm or more, it is more preferable in that the insulation with the driving thin film transistor 123 can be improved.
[0040]
In the bank portion 112, a region showing lyophilicity and a region showing liquid repellency are formed.
The regions showing lyophilicity are the first stacked portion 112e of the inorganic bank layer 112a and the electrode surface 111a of the pixel electrode 111. These regions are surface-treated lyophilically by plasma treatment using oxygen as a processing gas. ing. The regions exhibiting liquid repellency are the wall surface of the upper opening 112d and the upper surface 112f of the organic bank layer 112. These regions are formed by using tetrafluoromethane, tetrafluoromethane, or carbon tetrafluoride as a processing gas. The surface is fluorinated (treated to be liquid repellent) by the plasma treatment.
[0041]
Next, as shown in FIG. 3, the functional layer 110 includes a hole injection / transport layer 110a stacked on the pixel electrode 111, and a light emitting layer 110b formed adjacent to the hole injection / transport layer 110a. It is composed of Note that another functional layer having another function may be further formed adjacent to the light emitting layer 110b. For example, it is possible to form an electron transport layer.
The hole injection / transport layer 110a has a function of injecting holes into the light emitting layer 110b and a function of transporting holes inside the hole injection / transport layer 110a. By providing such a hole injecting / transporting layer 110a between the pixel electrode 111 and the light emitting layer 110b, device characteristics such as light emitting efficiency and life of the light emitting layer 110b are improved. In the light emitting layer 110b, the holes injected from the hole injection / transport layer 110a and the electrons injected from the cathode 12 are recombined in the light emitting layer, and light emission is obtained.
[0042]
The hole injection / transport layer 110a is located in the lower opening 112c and formed on the pixel electrode surface 111a, and a flat portion 110a1 is formed in the upper opening 112d, and the first stacked portion 112e of the inorganic bank layer is located in the upper opening 112d. It consists of a peripheral edge 110a2 formed on the top. Further, depending on the structure, the hole injection / transport layer 110a is formed only on the pixel electrode 111 and between the inorganic bank layers 110a (the lower opening 110c) (on the flat portion described above). Some forms are only formed).
The flat portion 110a1 has a constant thickness and is formed in a range of, for example, 50 to 70 nm.
In the case where the peripheral edge portion 110a2 is formed, the peripheral edge portion 110a2 is located on the first stacked portion 112e and is in close contact with the wall surface of the upper opening 112d, that is, the organic bank layer 112b. The peripheral edge 110a2 is thin on the side close to the electrode surface 111a, increases along the direction away from the electrode surface 111a, and is thickest near the wall surface of the lower opening 112d.
The reason why the peripheral portion 110a2 has the shape as described above is that the hole injection / transport layer 110a discharges the first composition containing the hole injection / transport layer forming material and the polar solvent into the opening 112. The polar solvent is volatilized mainly on the first stacked portion 112e of the inorganic bank layer, and the hole injection / transport layer forming material is formed on the first stacked portion 112e. This is because it was concentrated and precipitated on the surface.
[0043]
The light emitting layer 110b is formed over the flat portion 110a1 and the peripheral portion 110a2 of the hole injection / transport layer 110a, and the thickness on the flat portion 112a1 is in the range of 50 to 80 nm.
The light emitting layer 110b has three types, a red light emitting layer 110b1 that emits red (R), a green light emitting layer 110b2 that emits green (G), and a blue light emitting layer 110b3 that emits blue (B). The light emitting layers 110b1 to 110b3 are arranged in stripes.
[0044]
As described above, since the peripheral portion 110a2 of the hole injection / transport layer 110a is in close contact with the wall surface (organic bank layer 112b) of the upper opening 112d, the light emitting layer 110b can be in direct contact with the organic bank layer 112b. Absent. Accordingly, the water contained as an impurity in the organic bank layer 112b can be prevented from moving to the light emitting layer 110b side by the peripheral edge portion 110a2, and the light emitting layer 110b can be prevented from being oxidized by water.
Further, since the peripheral edge portion 110a2 having a non-uniform thickness is formed on the first stacked portion 112e of the inorganic bank layer, the peripheral edge portion 110a2 is insulated from the pixel electrode 111 by the first stacked portion 112e. Holes are not injected from 110a2 into the light emitting layer 110b. Thereby, the current from the pixel electrode 111 flows only in the flat portion 112a1, and holes can be uniformly transported from the flat portion 112a1 to the light emitting layer 110b, and only the central portion of the light emitting layer 110b can emit light. The light emission amount in the light emitting layer 110b can be made constant.
Further, since the inorganic bank layer 112a extends further to the center side of the pixel electrode 111 than the organic bank layer 112b, the shape of the joint portion between the pixel electrode 111 and the flat portion 110a1 is trimmed by the inorganic bank layer 112a. Thus, variation in the emission intensity between the light emitting layers 110b can be suppressed.
[0045]
Furthermore, since the electrode surface 111a of the pixel electrode 111 and the first stacked portion 112e of the inorganic bank layer exhibit lyophilicity, the functional layer 110 is uniformly adhered to the pixel electrode 111 and the inorganic bank layer 112a, and is formed on the inorganic bank 112a. The functional layer 110 is not extremely thin, and a short circuit between the pixel electrode 111 and the cathode 12 can be prevented.
Further, since the upper surface 112f and the wall surface of the upper opening 112d of the organic bank layer 112b exhibit liquid repellency, the adhesion between the functional layer 110 and the organic bank layer 112b is lowered, and the functional layer 110 overflows from the opening 112g. It will not be done.
[0046]
In addition, as a hole injection / transport layer forming material, for example, a mixture of a polythiophene derivative such as polyethylenedioxythiophene and polystyrene sulfonic acid can be used.
Further, as a material of the light emitting layer 110b, for example, [Chemical Formula 1] to [Chemical Formula 5] are polyfluorene derivatives, in addition, (poly) paraphenylene vinylene derivatives, polyphenylene derivatives, polyfluorene derivatives, polyvinylcarbazole, polythiophene derivatives. Alternatively, these polymer materials may be doped with perylene dyes, coumarin dyes, rhodamine dyes, rubrene, perylene, 9,10-diphenylanthracene, tetraphenylbutadiene, nile red, coumarin 6, quinacridone, and the like. it can.
[0047]
[Chemical 1]

[0048]
[Chemical 2]

[0049]
[Chemical 3]

[0050]
[Formula 4]

[0051]
[Chemical formula 5]

[0052]
Next, the cathode 12 is formed on the entire surface of the light emitting element portion 11 and plays a role of flowing a current through the functional layer 110 in a pair with the pixel electrode 111. For example, the cathode 12 is formed by laminating a calcium layer and an aluminum layer. At this time, it is preferable to provide a cathode having a low work function on the cathode near the light emitting layer, and in this embodiment, in particular, it plays a role of injecting electrons into the light emitting layer 110b in direct contact with the light emitting layer 110b. Further, depending on the material of the light emitting layer, lithium fluoride may form LiF between the light emitting layer 110 and the cathode 12 in order to efficiently emit light.
The red and green light emitting layers 110b1 and 1110b2 are not limited to lithium fluoride, and other materials may be used. Therefore, in this case, a layer made of lithium fluoride may be formed only on the blue (B) light-emitting layer 110b3, and layers other than lithium fluoride may be laminated on the other red and green light-emitting layers 110b1 and 110b2. Further, only calcium may be formed on the red and green light emitting layers 110b1 and 110b2 without forming lithium fluoride.
For example, the thickness of lithium fluoride is preferably in the range of 2 to 5 nm, and particularly preferably about 2 nm. The thickness of calcium is preferably in the range of, for example, 2 to 50 nm, and particularly preferably about 20 nm.
The aluminum forming the cathode 12 reflects light emitted from the light emitting layer 110b toward the substrate 2, and is preferably made of an Ag film, an Al / Ag laminated film, or the like in addition to the Al film. Further, the thickness is preferably in the range of, for example, 100 to 1000 nm, particularly about 200 nm.
Furthermore, SiO, SiO on aluminum ₂ An anti-oxidation protective layer made of SiN or the like may be provided.
Note that a sealing can 604 is disposed on the light-emitting element formed in this manner. As shown in FIG. 2B, the sealing can 604 is bonded with a sealing resin 603 to form the display device 1.
[0053]
Next, a method for manufacturing the display device of this embodiment will be described with reference to the drawings.
The manufacturing method of the display device 1 of this embodiment includes, for example, (1) a bank part forming step, (2) a plasma processing step, (3) a hole injection / transport layer forming step, (4) a light emitting layer forming step, 5) A counter electrode forming step, and (6) a sealing step. In addition, a manufacturing method is not restricted to this, When other processes are removed as needed, it may be added.
[0054]
(1) Bank part formation process
In the bank portion forming step, the bank portion 112 is formed at a predetermined position on the substrate 2. The bank portion 112 has a structure in which an inorganic bank layer 112a is formed as a first bank layer, and an organic bank layer 112b is formed as a second bank layer. The formation method will be described below.
[0055]
(1) -1 Formation of inorganic bank layer
First, as shown in FIG. 4, an inorganic bank layer 112a is formed at a predetermined position on the substrate. The positions where the inorganic bank layer 112 a is formed are on the second interlayer insulating film 144 b and the electrode (here, the pixel electrode) 111. The second interlayer insulating film 144b is formed on the circuit element portion 14 in which a thin film transistor, a scanning line, a signal line, and the like are arranged.
The inorganic bank layer 112a is made of, for example, SiO. ₂ TiO ₂ An inorganic film such as the above can be used as a material. These materials are formed by, for example, a CVD method, a coating method, a sputtering method, a vapor deposition method, or the like.
Furthermore, the film thickness of the inorganic bank layer 112a is preferably in the range of 50 to 200 nm, particularly 150 nm.
In the inorganic bank layer 112, an inorganic film is formed on the entire surface of the interlayer insulating layer 114 and the pixel electrode 111, and then the inorganic film is patterned by a photolithography method or the like, whereby the inorganic bank layer 112 having an opening is formed. The opening corresponds to the formation position of the electrode surface 111a of the pixel electrode 111, and is provided as the lower opening 112c as shown in FIG.
At this time, the inorganic bank layer 112 a is formed so as to overlap with the peripheral edge of the pixel electrode 111. As shown in FIG. 4, the light emitting region of the light emitting layer 110 can be controlled by forming the inorganic bank layer 112a so that the peripheral edge of the pixel electrode 111 and the inorganic bank layer 112a overlap.
[0056]
(1) -2 Formation of organic bank layer 112b
Next, an organic bank layer 112b as a second bank layer is formed.
As shown in FIG. 5, the organic bank layer 112b is formed on the inorganic bank layer 112a. As the organic bank layer 112b, a material having heat resistance and solvent resistance such as acrylic resin and polyimide resin is used. Using these materials, the organic bank layer 112b is formed by patterning using a photolithography technique or the like. When patterning, an upper opening 112d is formed in the organic bank layer 112b. The upper opening 112d is provided at a position corresponding to the electrode surface 111a and the lower opening 112c.
As shown in FIG. 5, the upper opening 112d is preferably formed wider than the lower opening 112c formed in the inorganic bank layer 112a. Further, the organic bank layer 112b preferably has a tapered shape, which is narrower than the width of the pixel electrode 111 on the lowest surface of the organic bank layer 112b, and substantially the same width as the pixel electrode 111 on the uppermost surface of the organic bank layer 112b. It is preferable to do. As a result, the first stacked portion 112e surrounding the lower opening 112c of the inorganic bank layer 112a is extended toward the center of the pixel electrode 111 from the organic bank layer 112b.
In this manner, the upper opening 112d formed in the organic bank layer 112b and the lower opening 112c formed in the inorganic bank layer 112a are connected to each other, thereby opening the inorganic bank layer 112a and the organic bank layer 112b. 112g is formed.
[0057]
The thickness of the organic bank layer 112b is preferably in the range of 0.1 to 3.5 μm, and particularly preferably about 2 μm. The reason for this range is as follows.
That is, when the thickness is less than 0.1 μm, the organic bank layer 112b becomes thinner than the total thickness of the hole injection / transport layer and the light emitting layer, which will be described later, and the light emitting layer 110b may overflow from the upper opening 112d. It is not preferable. On the other hand, if the thickness exceeds 3.5 μm, a step difference due to the upper opening 112d becomes large, and step coverage of the cathode 12 in the upper opening 112d cannot be secured, which is not preferable. In addition, it is preferable that the thickness of the organic bank layer 112b is 2 μm or more because the insulation between the cathode 12 and the driving thin film transistor 123 can be enhanced.
[0058]
(2) Plasma treatment process
Next, the plasma processing step is performed for the purpose of activating the surface of the pixel electrode 111 and further surface-treating the surface of the bank portion 112. In particular, in the activation process, cleaning on the pixel electrode 111 (ITO) and adjustment of the work function are performed mainly. Further, a lyophilic process on the surface of the pixel electrode 111 and a lyophobic process on the surface of the bank unit 112 are performed.
[0059]
This plasma treatment process includes, for example, (2) -1 preheating process, (2) -2 activation treatment process (lyophilic process to make lyophilic), (2) -3 lyophobic process process, and (2) -4 It is roughly divided into cooling process. In addition, it is not restricted to such a process, A process is reduced as needed and the further process addition is also performed.
[0060]
First, FIG. 6 shows a plasma processing apparatus used in the plasma processing step.
The plasma processing apparatus 50 shown in FIG. 6 transports the substrate 2 to the preliminary heating processing chamber 51, the first plasma processing chamber 52, the second plasma processing chamber 53, the cooling processing chamber 54, and the processing chambers 51 to 54. The apparatus 55 is comprised. The processing chambers 51 to 54 are arranged radially around the transfer device 55.
[0061]
First, a schematic process using these apparatuses will be described.
The preheating step is performed in a preheating treatment chamber 51 shown in FIG. Then, the substrate 2 transported from the bank portion forming step is heated to a predetermined temperature by the processing chamber 51.
After the preheating step, a lyophilic step and a lyophobic treatment step are performed. That is, the substrate is sequentially transferred to the first and second plasma processing chambers 52 and 53, and the bank 112 is subjected to plasma processing in the processing chambers 52 and 53 to be lyophilic. A lyophobic treatment is performed after the lyophilic treatment. After the liquid repellent treatment, the substrate is transferred to the cooling treatment chamber, and the substrate is cooled to room temperature in the cooling treatment chamber 54. After this cooling step, the substrate is transferred to the hole injection / transport layer forming step which is the next step by the transfer device.
[0062]
Below, each process is demonstrated in detail.
(2) -1 Preheating process
The preheating process is performed in the preheating treatment chamber 51. In the processing chamber 51, the substrate 2 including the bank unit 112 is heated to a predetermined temperature.
As a method for heating the substrate 2, for example, a heater is attached to a stage on which the substrate 2 is placed in the processing chamber 51, and a means for heating the substrate 2 together with the stage using the heater is employed. It should be noted that other methods may be employed.
In the preheating chamber 51, the substrate 2 is heated to a range of, for example, 70 ° C to 80 ° C. This temperature is a processing temperature in the plasma processing that is the next step, and is intended to eliminate the temperature variation of the substrate 2 by heating the substrate 2 in advance in accordance with the next step.
If the preheating step is not added, the substrate 2 is heated from room temperature to the above temperature, and the substrate 2 is processed while the temperature constantly fluctuates during the plasma processing step from the start of the step to the end of the step. Become. Therefore, performing plasma treatment while the substrate temperature changes may lead to non-uniform characteristics. Therefore, preheating is performed in order to keep the processing conditions constant and obtain uniform characteristics.
[0063]
Therefore, in the plasma processing step, when the lyophilic step or the lyophobic step is performed with the substrate 2 placed on the sample stage in the first and second plasma processing apparatuses 52 and 53, the preheating temperature is set as follows: It is preferable to make the temperature substantially coincide with the temperature of the sample stage 56 in which the lyophilic step or the liquid repellent step is continuously performed.
Therefore, the substrate 2 is preheated to a temperature at which the sample stage in the first and second plasma processing apparatuses 52 and 53 rises, for example, 70 to 80 ° C., so that plasma processing is continuously performed on a large number of substrates. Even in this case, the plasma processing conditions immediately after the start of processing and immediately before the end of processing can be made substantially constant. Thereby, the surface treatment conditions of the substrate 2 can be made the same, the wettability with respect to the composition of the bank part 112 can be made uniform, and a display device having a certain quality can be manufactured.
Further, by preheating the substrate 2 in advance, the processing time in the subsequent plasma processing can be shortened.
[0064]
(2) -2 Activation treatment
Next, activation processing is performed in the first plasma processing chamber 52. The activation process includes adjustment and control of a work function in the pixel electrode 111, cleaning of the pixel electrode surface, and lyophilic process of the pixel electrode surface.
As a lyophilic treatment, a plasma treatment (O ₂ Plasma treatment) is performed. FIG. 7 is a view schematically showing the first plasma treatment. As shown in FIG. 7, the substrate 2 including the bank portion 112 is placed on a sample stage 56 with a built-in heater, and a plasma discharge electrode is disposed above the substrate 2 with a gap interval of about 0.5 to 2 mm. 57 is arranged to face the substrate 2. While the substrate 2 is heated by the sample stage 56, the sample stage 56 is transported at a predetermined transport speed in the direction of the arrow in the figure, and the substrate 2 is irradiated with oxygen in the plasma state during that time.
O ₂ The plasma treatment is performed under the conditions of, for example, plasma power of 100 to 800 kW, oxygen gas flow rate of 50 to 100 ml / min, plate conveyance speed of 0.5 to 10 mm / sec, and substrate temperature of 70 to 90 ° C. Note that the heating by the sample stage 56 is mainly performed to keep the preheated substrate 2 warm.
[0065]
This O ₂ As shown in FIG. 8, the plasma treatment causes the electrode surface 111a of the pixel electrode 111, the wall surface of the first stacked portion 112e of the inorganic bank layer 112a and the upper opening 112d of the organic bank layer 112b, and the upper surface 112f to be lyophilic. . By this lyophilic treatment, hydroxyl groups are introduced into these surfaces to impart lyophilic properties.
In FIG. 9, the lyophilic portion is indicated by a one-dot chain line.
This O ₂ The plasma treatment not only imparts lyophilicity, but also serves to clean the ITO as the pixel electrode and adjust the work function as described above.
[0066]
(2) -3 Liquid repellent treatment process
Next, in the second plasma processing chamber 53, as a lyophobic process, plasma processing (CF) using tetrafluoromethane as a processing gas in an air atmosphere is performed. _Four Plasma treatment) is performed. The internal structure of the second plasma processing chamber 53 is the same as the internal structure of the first plasma processing chamber 52 shown in FIG. That is, the substrate 2 is conveyed by the sample stage at a predetermined conveyance speed while being heated by the sample stage, and plasma tetrafluoromethane (carbon tetrafluoride) is irradiated to the substrate 2 during that time.
CF _Four The plasma treatment is performed under the conditions of, for example, a plasma power of 100 to 800 kW, a tetrafluoromethane gas flow rate of 50 to 100 ml / min, a substrate transfer speed of 0.5 to 10 mm / sec, and a substrate temperature of 70 to 90 ° C. Note that the heating by the heating stage is performed mainly to keep the preheated substrate 2 warm as in the case of the first plasma processing chamber 52.
The processing gas is not limited to tetrafluoromethane (carbon tetrafluoride), and other fluorocarbon gases can be used.
[0067]
CF _Four By the plasma treatment, as shown in FIG. 9, the wall surface of the upper opening 112d and the upper surface 112f of the organic bank layer are subjected to a liquid repellent treatment. By this liquid repellent treatment, fluorine groups are introduced into each of these surfaces to impart liquid repellency. In FIG. 9, the region showing liquid repellency is indicated by a two-dot chain line. Organic substances such as an acrylic resin and a polyimide resin constituting the organic bank layer 112b can be easily made liquid repellent when irradiated with plasma fluorocarbon. O ₂ The pretreatment with plasma is characterized in that it is more easily fluorinated, and is particularly effective in this embodiment.
Note that the electrode surface 111a of the pixel electrode 111 and the first stacked portion 112e of the inorganic bank layer 112a are also formed of this CF. _Four Although it is somewhat affected by plasma treatment, it hardly affects wettability. In FIG. 9, a region showing lyophilicity is indicated by a one-dot chain line.
[0068]
(2) -4 Cooling process
Next, as a cooling process, the cooling processing chamber 54 is used to cool the substrate 2 heated for the plasma processing to the management temperature. This is a process performed for cooling to a control temperature of an ink jet process (droplet discharge process) which is a subsequent process.
The cooling processing chamber 54 has a plate for placing the substrate 2, and the plate has a structure in which a water cooling device is incorporated so as to cool the substrate 2.
In addition, by cooling the substrate 2 after the plasma treatment to room temperature or a predetermined temperature (for example, a management temperature for performing the ink jet process), the temperature of the substrate 2 becomes constant in the next hole injection / transport layer forming process, The next process can be performed at a uniform temperature without any temperature change of the substrate 2. Therefore, by adding such a cooling step, the material discharged by the discharging means such as the ink jet method can be formed uniformly.
For example, when the first composition containing the material for forming the hole injection / transport layer is ejected, the first composition can be ejected continuously at a constant volume, and the hole injection / transport layer is Can be formed uniformly.
[0069]
In the above plasma treatment process, O bank 112b and inorganic bank layer 112a of different materials are subjected to O ₂ Plasma treatment and CF _Four By sequentially performing the plasma treatment, a lyophilic region and a lyophobic region can be easily provided in the bank portion 112.
[0070]
Note that the plasma processing apparatus used in the plasma processing step is not limited to that shown in FIG. 6, and for example, a plasma processing apparatus 60 as shown in FIG. 10 may be used.
A plasma processing apparatus 60 shown in FIG. 10 includes a preheating processing chamber 61, a first plasma processing chamber 62, a second plasma processing chamber 63, a cooling processing chamber 64, and a substrate 2 in each of the processing chambers 61 to 64. The processing chambers 61 to 64 are arranged on both sides in the carrying direction of the carrying device 65 (both sides in the direction of the arrow in the figure).
In this plasma processing apparatus 60, the substrate 2 transported from the bank part forming step is transferred to the preliminary heating processing chamber 61, the first and second plasma processing chambers 62, 63, similarly to the plasma processing apparatus 50 shown in FIG. After sequentially transporting to the cooling processing chamber 64 and performing the same processing as above in each processing chamber, the substrate 2 is transported to the next hole injection / transport layer forming step.
Further, the plasma apparatus may be a plasma apparatus under vacuum, not an apparatus under atmospheric pressure.
[0071]
(3) Hole injection / transport layer formation process
Next, in the light emitting element formation step, a hole injection / transport layer is formed on the electrode (here, the pixel electrode 111).
In the hole injection / transport layer forming step, the first composition (composition) containing the hole injection / transport layer forming material is discharged onto the electrode surface 111a by using, for example, an ink jet apparatus as droplet discharge. Thereafter, a drying process and a heat treatment are performed to form a hole injection / transport layer 110a on the pixel electrode 111 and the inorganic bank layer 112a. Here, the inorganic bank layer 112a on which the hole injection / transport layer 110a is formed is referred to as a first stacked portion 112e herein.
Subsequent steps including the hole injection / transport layer forming step are preferably an atmosphere free of water and oxygen. For example, it is preferably performed in an inert gas atmosphere such as a nitrogen atmosphere or an argon atmosphere.
[0072]
The hole injection / transport layer 110a may not be formed on the first stacked unit 112e. That is, the hole injection / transport layer may be formed only on the pixel electrode 111.
The manufacturing method by inkjet is as follows.
As shown in FIG. 11, a first composition containing a hole injection / transport layer forming material is discharged from a plurality of nozzles formed in the inkjet head H1. Here, the composition is filled for each pixel by scanning the ink jet head, but it is also possible to scan the substrate 2. Further, the composition can be filled by moving the inkjet head and the substrate 2 relatively. In addition, in the process performed using the inkjet head after this, said point is the same.
The ejection by the inkjet head is as follows. That is, the discharge nozzle H2 formed on the ink jet head H1 is disposed so as to face the electrode surface 111a, and the first composition is discharged from the nozzle H2. A bank 112 that defines a lower opening 112c is formed around the pixel electrode 111. The ink jet head H1 is opposed to the pixel electrode surface 111a located in the lower opening 112c. The first composition droplet 110c, whose liquid amount per droplet is controlled, is discharged onto the electrode surface 111a from the discharge nozzle H2.
[0073]
As the first composition used here, for example, a composition obtained by dissolving a mixture of a polythiophene derivative such as polyethylenedioxythiophene (PEDOT) and polystyrenesulfonic acid (PSS) in a polar solvent can be used. Examples of the polar solvent include isopropyl alcohol (IPA), normal butanol, γ-butyrolactone, N-methylpyrrolidone (NMP), 1,3-dimethyl-2-imidazolidinone (DMI) and its derivatives, carbitol acetate And glycol ethers such as butyl carbitol acetate.
More specifically, the composition of the first composition is PEDOT / PSS mixture (PEDOT / PSS = 1: 20): 12.52% by weight, PSS: 1.44% by weight, IPA: 10% by weight, NMP: 27 And 48% by weight and DMI: 50% by weight. The viscosity of the first composition is preferably about 2 to 20 Ps, particularly about 4 to 15 cPs.
By using the first composition, the discharge nozzle H2 can be stably discharged without clogging.
The hole injection / transport layer forming material may be the same for the red (R), green (G), and blue (B) light emitting layers 110b1 to 110b3, and may be changed for each light emitting layer. May be.
[0074]
As shown in FIG. 11, the discharged first composition droplet 110c spreads on the lyophilic electrode surface 111a and the first laminated portion 112e, and fills the lower and upper openings 112c and 112d. Even if the first composition droplet 110c deviates from the predetermined ejection position and is ejected onto the upper surface 112f, the upper surface 112f is not wetted by the first composition droplet 110c and is repelled. Rolls into the lower and upper openings 112c and 112d.
[0075]
The amount of the first composition discharged onto the electrode surface 111a is the size of the lower and upper openings 112c and 112d, the thickness of the hole injection / transport layer to be formed, and the hole injection / transport in the first composition. It is determined by the concentration of the layer forming material.
Further, the first composition droplet 110c may be discharged not only once but also several times onto the same electrode surface 111a. In this case, the amount of the first composition at each time may be the same, and the first composition may be changed every time. Furthermore, you may discharge a 1st composition not only to the same location of the electrode surface 111a but to a different location in the electrode surface 111a every time.
[0076]
For the structure of the inkjet head, a head H as shown in FIG. 14 can be used. Further, the arrangement of the substrate and the ink jet head is preferably arranged as shown in FIG. In FIG. 14, reference numeral H7 denotes a support substrate that supports the inkjet head H1, and a plurality of inkjet heads H1 are provided on the support substrate H7.
The ink discharge surface (surface facing the substrate) of the inkjet head H1 has a plurality of discharge nozzles (for example, 1 in a row along the length direction of the head and in two rows at intervals in the width direction of the head). 180 nozzles in a total of 360 nozzles). In addition, the inkjet head H1 has the discharge nozzle directed toward the substrate side, and is inclined in a row along the X-axis direction at a predetermined angle with respect to the X-axis (or Y-axis) and at a predetermined interval in the Y direction. A plurality (6 in a row, 12 in total in FIG. 14) are positioned and supported on a support plate 20 having a substantially rectangular shape in a plan view in a state of being arranged in two rows.
In the ink jet apparatus shown in FIG. 15, reference numeral 1115 denotes a stage on which the substrate 2 is placed, and reference numeral 1116 denotes a guide rail that guides the stage 1115 in the x-axis direction (main scanning direction) in the drawing. The head H can be moved in the y-axis direction (sub-main scanning direction) in the figure by the guide rail 1113 via the support member 1111. Further, the head H can be rotated in the θ-axis direction in the figure. The inkjet head H1 can be inclined at a predetermined angle with respect to the main scanning direction. As described above, the nozzle pitch can be made to correspond to the pixel pitch by arranging the inkjet head to be inclined with respect to the scanning direction. Further, any pixel pitch can be accommodated by adjusting the tilt angle.
[0077]
A substrate 2 shown in FIG. 15 has a structure in which a plurality of chips are arranged on a mother substrate. That is, one chip area corresponds to one display device. Here, three display areas 2a are formed, but the present invention is not limited to this. For example, when the composition is applied to the left display area 2 a on the substrate 2, the head H is moved to the left side in the drawing via the guide rail 1113 and the substrate 2 is shown in the drawing via the guide rail 1116. Application is performed while moving the substrate 2 and scanning the substrate 2. Next, the head H is moved to the right side in the drawing to apply the composition to the display area 2a at the center of the substrate. The same applies to the display area 2a at the right end.
The head H shown in FIG. 14 and the ink jet apparatus shown in FIG. 15 may be used not only in the hole injection / transport layer forming step but also in the light emitting layer forming step.
[0078]
Next, a drying process as shown in FIG. 12 is performed. By performing the drying step, the discharged first composition is dried, the polar solvent contained in the first composition is evaporated, and the hole injection / transport layer 110a is formed.
When the drying process is performed, the evaporation of the polar solvent contained in the first composition droplet 110c mainly occurs near the inorganic bank layer 112a and the organic bank layer 112b, and the hole injection / transport layer is combined with the evaporation of the polar solvent. The forming material is concentrated and deposited.
As a result, as shown in FIG. 13, a peripheral portion 110a2 made of a hole injection / transport layer forming material is formed on the first stacked portion 112e. The peripheral edge 110a2 is in close contact with the wall surface (organic bank layer 112b) of the upper opening 112d. It is thicker on the side closer to.
[0079]
At the same time, the polar solvent evaporates on the electrode surface 111a as a result of the drying process, thereby forming a flat portion 110a1 made of a hole injection / transport layer forming material on the electrode surface 111a. Since the evaporation rate of the polar solvent is almost uniform on the electrode surface 111a, the material for forming the hole injection / transport layer is uniformly concentrated on the electrode surface 111a, thereby forming a flat portion 110a having a uniform thickness. The
In this way, the hole injection / transport layer 110a composed of the peripheral portion 110a2 and the flat portion 110a1 is formed.
The hole injection / transport layer may be formed only on the electrode surface 111a without being formed on the peripheral edge 110a2.
[0080]
The drying process is performed, for example, in a nitrogen atmosphere at room temperature and a pressure of, for example, about 133.3 Pa (1 Torr). If the pressure is too low, the first composition droplet 110c will bump, which is not preferable. On the other hand, if the temperature is higher than room temperature, the evaporation rate of the polar solvent increases and a flat film cannot be formed.
After the drying treatment, it is preferable to remove the polar solvent and water remaining in the hole injecting / transporting layer 110a by performing heat treatment in nitrogen, preferably in vacuum, at 200 ° C. for about 10 minutes.
[0081]
In the hole injecting / transporting layer forming step, the discharged first composition droplets 110c are filled in the lower and upper openings 112c and 112d, while the organic bank layer 112b subjected to the liquid repellent treatment is used for the first. The composition is repelled and rolls into the lower and upper openings 112c and 112d. Thus, the discharged first composition droplet 110c can be surely filled in the lower and upper openings 112c and 112d, and the hole injection / transport layer 110a can be formed on the electrode surface 111a.
[0082]
(4) Light emitting layer formation process
Next, the light emitting layer forming step includes a surface modifying step, a light emitting layer forming material discharging step, and a drying step.
First, a surface modification process is performed to modify the surface of the hole injection / transport layer 110a. This process will be described in detail below. Next, as in the hole injection / transport layer forming step described above, the second composition is discharged onto the hole injection / transport layer 110a by an inkjet method. Thereafter, the discharged second composition is dried (and heat-treated) to form the light emitting layer 110b on the hole injection / transport layer 110a.
[0083]
In the light emitting layer forming step, in order to prevent re-dissolution of the hole injecting / transporting layer 110a, as a solvent for the second composition used in forming the light emitting layer, a non-insoluble insoluble in the hole injecting / transporting layer 110a. A polar solvent is used.
However, since the hole injection / transport layer 110a has a low affinity for the nonpolar solvent, the hole injection / transport layer 110a can be injected even if the second composition containing the nonpolar solvent is discharged onto the hole injection / transport layer 110a. / There is a possibility that the transport layer 110a and the light emitting layer 110b cannot be adhered to each other or the light emitting layer 110b cannot be applied uniformly.
Therefore, in order to enhance the affinity of the surface of the hole injection / transport layer 110a with respect to the nonpolar solvent and the light emitting layer forming material, it is preferable to perform a surface modification step before forming the light emitting layer.
[0084]
Therefore, the surface modification step will be described.
In the surface modification step, a surface modifying material that is the same solvent as the non-polar solvent of the second composition used in the formation of the light emitting layer or a similar solvent is applied to the ink jet method (droplet discharge method), spin coating method or The coating is performed by applying the film on the hole injection / transport layer 110a by the dipping method and then drying.
[0085]
As shown in FIG. 13, the application by the ink jet method is performed by filling the ink jet head H3 with a surface modifying material and discharging the surface modifying material from a discharge nozzle H4 formed on the ink jet head H3. Similar to the hole injection / transport layer forming step described above, the discharge nozzle H4 is opposed to the substrate 2 (that is, the substrate 2 on which the hole injection / transport layer 110a is formed), and the inkjet head H3 and the substrate 2 are relative to each other. While moving, the surface modifying material 110d is discharged from the discharge nozzle H4 onto the hole injection / transport layer 110a.
[0086]
In addition, the application by spin coating is performed by placing the substrate 2 on, for example, a rotary stage, dropping the surface modifying material onto the substrate 2 from above, and then rotating the substrate 2 so that the surface modifying material is placed on the substrate 2. This is performed by expanding the whole hole injection / transport layer 110a. The surface modifying material also temporarily spreads on the top surface 112f that has been subjected to the lyophobic treatment, but is blown away by centrifugal force due to rotation, and is applied only to the hole injection / transport layer 110a.
Further, application by the dip method is performed by immersing the substrate 2 in a surface modifying material, for example, and then pulling it up to spread the surface modifying material over the whole hole injection / transport layer 110a. In this case as well, the surface modifying material temporarily spreads on the upper surface 112f that has been subjected to the liquid repellent treatment, but the surface modifying material is repelled from the upper surface 112f and applied only to the hole injection / transport layer 110a. .
[0087]
Examples of the surface modifier used here include cyclohexylbenzene, dihydrobenzofuran, trimethylbenzene, tetramethylbenzene and the like as the nonpolar solvent of the second composition. Examples of the nonpolar solvent include toluene and xylene.
In particular, in the case of coating by an ink jet method, it is preferable to use dihydrobenzofuran, trimethylbenzene, tetramethylbenzene, cyclohexylbenzene, or a mixture thereof, particularly the same solvent mixture as the second composition. In the case of the dip method, toluene, xylene and the like are preferable.
[0088]
Next, as shown in FIG. 16, the application region is dried. In the drying step, it is preferable that the substrate 2 is placed on a hot plate and heated at a temperature of, for example, 200 ° C. or less to dry and evaporate when applied by an inkjet method. In the case of the spin coating method or the dip method, it is preferable to dry by blowing nitrogen on the substrate 2 or rotating the substrate to generate an air flow on the surface of the substrate 2.
[0089]
The surface modifying material is applied after the drying process in the hole injection / transport layer entering layer forming process, and after the surface modifying material is dried, the heat treatment in the hole injection / transport layer forming process is performed. May be performed.
[0090]
By performing such a surface modification step, the surface of the hole injection / transport layer 110a is easily adapted to the nonpolar solvent, and in the subsequent step, the second composition containing the light emitting layer forming material is injected into the hole. / Can be uniformly applied to the transport layer 110a.
[0091]
In addition, the above-mentioned compound 2 or the like generally used as a hole transporting material is dissolved in the surface modifying material to form a composition, and this composition is applied onto the hole injection / transport layer by an ink jet method. An extremely thin hole transport layer may be formed on the hole injection / transport layer by drying.
[0092]
Most of the hole injecting / transporting layer dissolves in the light emitting layer 110b to be applied in a later step, but a part of the hole injecting / transporting layer remains in a thin film between the hole injecting / transporting layer 110a and the light emitting layer 110b. The energy barrier between the hole injection / transport layer 110a and the light emitting layer 110b can be lowered to facilitate the movement of holes and improve the light emission efficiency.
[0093]
Next, as a light emitting layer forming step, the second composition containing the light emitting layer forming material is discharged onto the hole injection / transport layer 110a by an ink jet method (droplet discharge method), and then dried to perform hole injection / A light emitting layer 110b is formed on the transport layer 110a.
[0094]
FIG. 17 shows an ink jetting method. As shown in FIG. 17, the ink-jet head H5 and the substrate 2 are moved relatively to each other (for example, blue (B) in this case) from the discharge nozzle H6 formed on the ink-jet head. The composition is discharged.
At the time of discharge, the second composition is formed while the discharge nozzle is opposed to the hole injection / transport layer 110a located in the lower and upper openings 112c and 112d and the inkjet head H5 and the substrate 2 are relatively moved. Discharged. The amount of liquid discharged from the discharge nozzle H6 is controlled per drop. Thus, the liquid (second composition droplet 110e) whose liquid amount is controlled is discharged from the discharge nozzle, and the second composition droplet 110e is discharged onto the hole injection / transport layer 110a.
[0095]
Examples of the light emitting layer forming material include polyfluorene polymer derivatives represented by [Chemical Formula 1] to [Chemical Formula 5], (poly) paraphenylene vinylene derivatives, polyphenylene derivatives, polyvinyl carbazole, polythiophene derivatives, perylene dyes, and coumarin dyes. , Rhodamine dyes, or the above polymers can be doped with an organic EL material. For example, it can be used by doping rubrene, perylene, 9,10-diphenylanthracene, tetraphenylbutadiene, Nile red, coumarin 6, quinacridone and the like.
[0096]
As the nonpolar solvent, those insoluble in the hole injection / transport layer 110a are preferable. For example, cyclohexylbenzene, dihydrobenzofuran, trimethylbenzene, tetramethylbenzene and the like can be used.
By using such a nonpolar solvent for the second composition of the light emitting layer 110b, the second composition can be applied without re-dissolving the hole injection / transport layer 110a.
[0097]
As shown in FIG. 17, the discharged second composition 110e spreads on the hole injection / transport layer 110a and fills the lower and upper openings 112c and 112d. On the other hand, even if the first composition droplet 110e is deviated from the predetermined discharge position and discharged onto the upper surface 112f on the liquid repellent upper surface 112f, the upper surface 112f does not get wet with the second composition droplet 110e. The second composition droplet 110e rolls into the lower and upper openings 112c and 112d.
[0098]
The amount of the second composition discharged onto each hole injection / transport layer 110a is the size of the lower and upper openings 112c and 112d, the thickness of the light emitting layer 110b to be formed, and the light emitting layer material in the second composition. It is determined by the concentration etc.
The second composition 110e may be discharged not only once but also several times on the same hole injection / transport layer 110a. In this case, the amount of the second composition at each time may be the same, and the liquid amount of the second composition may be changed every time. Further, the second composition may be discharged and disposed not only at the same location of the hole injection / transport layer 110a but also at different locations within the hole injection / transport layer 110a each time.
[0099]
Next, after the second composition is completely discharged to a predetermined position, the light emitting layer 110b3 is formed by drying the discharged second composition droplet 110e. That is, the nonpolar solvent contained in the second composition is evaporated by drying, and a blue (B) light emitting layer 110b3 as shown in FIG. 18 is formed. In FIG. 18, only one light emitting layer emitting blue light is shown. However, as is clear from FIG. 1 and other drawings, the light emitting elements are originally formed in a matrix and are not shown. A number of light emitting layers (corresponding to blue) are formed.
[0100]
Subsequently, as shown in FIG. 19, the red (R) light emitting layer 110b1 is formed and the green (G) light emitting layer 110b2 is finally formed by using the same process as that of the blue (B) light emitting layer 110b3. To do.
Note that the order of forming the light emitting layers 110b is not limited to the order described above, and may be formed in any order. For example, the order of formation can be determined according to the light emitting layer forming material.
[0101]
In the case of blue 110b3, the drying condition of the second composition of the light emitting layer is, for example, a condition in which the pressure is set to about 133.3 Pa (1 Torr) at room temperature in a nitrogen atmosphere for 5 to 10 minutes. If the pressure is too low, the second composition will bump, which is not preferable. Further, if the temperature is higher than room temperature, the evaporation rate of the nonpolar solvent is increased, and a large amount of the light emitting layer forming material adheres to the wall surface of the upper opening 112d.
Also, in the case of the green light emitting layer 110b2 and the red light emitting layer b1, it is preferable to dry quickly because the number of components of the light emitting layer forming material is large. Is good.
Examples of other drying means include a far-infrared irradiation method and a high-temperature nitrogen gas spraying method.
In this manner, the hole injection / transport layer 110a and the light emitting layer 110b are formed on the pixel electrode 111.
[0102]
(5) Counter electrode (cathode) formation process
Next, in the counter electrode forming step, as shown in FIG. 20, the cathode 12 (counter electrode) is formed on the entire surface of the light emitting layer 110b and the organic bank layer 112b. The cathode 12 may be formed by stacking a plurality of materials. For example, it is preferable to form a material with a small work function on the side close to the light emitting layer, for example, Ca, Ba, etc. can be used, and depending on the material, it is better to form a thin layer of LiF, etc. There is also. In addition, a material having a work function higher than that of the lower side, for example, Al can be used on the upper side (sealing side).
These cathodes 12 are preferably formed by, for example, a vapor deposition method, a sputtering method, a CVD method, or the like. In particular, it is preferable to form the cathode 12 by a vapor deposition method from the viewpoint of preventing damage to the light emitting layer 110b due to heat.
Further, the lithium fluoride may be formed only on the light emitting layer 110b, and can be formed corresponding to a predetermined color. For example, it may be formed only on the blue (B) light emitting layer 110b3. In this case, the upper cathode layer 12b made of calcium is in contact with the other red (R) light emitting layers and green (G) light emitting layers 110b1 and 110b2.
[0103]
Further, an Al film, an Ag film, or the like formed by vapor deposition, sputtering, CVD, or the like is preferably used on the cathode 12. The thickness is preferably in the range of, for example, 100 to 1000 nm, particularly about 200 to 500 nm.
Further, on the cathode 12, SiO 2 is used for preventing oxidation. ₂ A protective layer such as SiN may be provided.
[0104]
(6) Sealing process
Finally, the sealing step is a step of sealing the substrate 2 on which the light emitting element is formed and the sealing substrate 3b with a sealing resin 3a. For example, a sealing resin 3a made of a thermosetting resin or an ultraviolet curable resin is applied to the entire surface of the substrate 2, and the sealing substrate 3b is laminated on the sealing resin 3a. By this process, the sealing portion 3 is formed on the substrate 2.
The sealing step is preferably performed in an inert gas atmosphere such as nitrogen, argon, or helium. It is not preferable to perform in the atmosphere because when there is a defect such as a pinhole in the cathode 12, water or oxygen may enter the cathode 12 from the defective portion and the cathode 12 may be oxidized.
Further, the cathode 12 is connected to the wiring 5a of the substrate 5 illustrated in FIG. 2, and the wiring of the circuit element unit 14 is connected to the driving IC 6, whereby the display device 1 of this embodiment is obtained.
[0105]
[Second Embodiment]
Next, a specific example of an electronic apparatus including the display device according to the first embodiment will be described.
FIG. 21A is a perspective view showing an example of a mobile phone. In FIG. 21A, reference numeral 600 denotes a mobile phone body, and reference numeral 601 denotes a display unit using the display device.
FIG. 21B is a perspective view showing an example of a portable information processing apparatus such as a word processor or a personal computer. In FIG. 21B, reference numeral 700 denotes an information processing apparatus, reference numeral 701 denotes an input unit such as a keyboard, reference numeral 703 denotes an information processing apparatus body, and reference numeral 702 denotes a display unit using the display device.
FIG. 21C is a perspective view showing an example of a wristwatch type electronic device. In FIG. 21C, reference numeral 800 indicates a watch body, and reference numeral 801 indicates a display unit using the display device.
Each of the electronic devices shown in FIGS. 21A to 21C is provided with a display unit using the display device of the first embodiment, and the display device of the previous first embodiment. Since it has the characteristics, the electronic device has an effect of high luminance and excellent display quality.
In order to manufacture these electronic devices, a display device 1 including a drive IC 6a (drive circuit) as shown in FIG. 2 is configured as in the first embodiment, and this display device 1 is connected to a mobile phone. It is manufactured by being incorporated into a portable information processing device and a wristwatch type electronic device.
[0106]
The technical scope of the present invention is not limited to the above embodiment, and various modifications can be made without departing from the spirit of the present invention.
In FIG. 22, the cross-sectional schematic diagram of the display apparatus of the other example which concerns on this invention is shown. The display device shown in FIG. 22 includes a substrate 2, a display element 10 formed on the substrate 2, a sealing resin 603 applied in an annular shape around the substrate 2, and a sealing provided on the display element 10. Part 3.
[0107]
The substrate 2 and the display element 10 are the same as the substrate 2 and the display element 10 according to the first embodiment. The display element 10 is mainly composed of a light emitting element portion 11 and a cathode 12 formed on the light emitting element portion 11.
[0108]
Further, as shown in FIG. 22, the sealing portion 3 is provided on the light emitting element portion 11. The sealing portion 3 includes a sealing resin 3a made of a thermosetting resin or an ultraviolet curable resin applied on the cathode 12, and a sealing substrate 3b disposed on the sealing resin 3a. In addition, as sealing resin 3a, what does not generate | occur | produce a gas, a solvent, etc. at the time of hardening is preferable.
The sealing part 3 is formed so as to substantially cover at least the cathode 12 on the light emitting element part 11, and prevents water or oxygen from entering the cathode 12 and the light emitting element part 11. 11 prevents oxidation of a light emitting layer, which will be described later, formed in the substrate 11.
The sealing substrate 3b is bonded to the sealing resin 3a to protect the sealing resin 3a, and is preferably a glass plate, a metal plate, or a resin plate.
[0109]
FIG. 23 is a schematic cross-sectional view of another example display device according to the present invention. The display device shown in FIG. 23 includes a substrate 2, a display element 10 formed on the substrate 2, a sealing resin 3a applied to the entire surface of the display element 10, and a sealing provided on the sealing resin 3a. And a circuit board 3b.
[0110]
The substrate 2, the display element 10, the sealing resin 3a, and the sealing substrate 3b are the same as the substrate 2, the display element 10, the sealing material 3, and the sealing substrate 4 according to the first embodiment. The display element 10 is mainly composed of a light emitting element portion 11 and a cathode 12 formed on the light emitting element portion 11.
[0111]
Further, as shown in FIG. 23, a protective layer 714 is formed between the sealing material 3 and the cathode 12. The protective layer 714 is made of SiO. ₂ , SiN or the like, and the thickness is in the range of 100 to 200 nm. The protective layer 714 prevents water or oxygen from entering the cathode 12 and the light emitting element unit 11 and prevents oxidation of a light emitting layer (not shown) formed in the cathode 12 or the light emitting element unit 11.
According to the above display device, it is possible to increase the luminance and extend the life of the display device by effectively preventing water and oxygen from entering and preventing the cathode 12 or the light emitting layer from being oxidized.
[0112]
In the first embodiment, the case where the R, G, and B light emitting layers 110b are arranged in stripes has been described. However, the present invention is not limited to this, and various arrangement structures may be adopted. For example, in addition to the stripe arrangement as shown in FIG. 24A, a mosaic arrangement as shown in FIG. 24B or a delta arrangement as shown in FIG.
[0113]
【The invention's effect】
As described above in detail, according to the method for manufacturing a display device of the present invention, the surface of the hole injection / transport layer is modified between the hole injection / transport layer formation step and the light emitting layer formation step. By providing a surface modification step of drying after applying the material, the affinity of the hole injection / transport layer for the nonpolar solvent can be improved, so the second composition for forming the light emitting layer can be uniformly formed. Can be applied.
Thereby, the light emitting layer can be uniformly formed on the hole injection / transport layer, and the adhesion between the light emitting layer and the hole injection / transport layer can be improved.
[Brief description of the drawings]
FIG. 1 is a schematic plan view of a wiring structure of a display device according to a first embodiment of the present invention.
2A and 2B are diagrams illustrating a display device according to a first embodiment of the present invention, in which FIG. 2A is a schematic plan view of the display device, and FIG. 2B is a schematic cross-sectional view taken along line AB in FIG. It is.
FIG. 3 is a diagram showing a main part of the display device according to the first embodiment of the present invention.
FIG. 4 is a process drawing that explains the manufacturing method of the display device of the first embodiment of the present invention.
FIGS. 5A to 5D are process diagrams illustrating a method for manufacturing a display device according to a first embodiment of the present invention. FIGS.
FIG. 6 is a schematic plan view showing an example of a plasma processing apparatus used for manufacturing the display device according to the first embodiment of the present invention.
7 is a schematic diagram showing an internal structure of a first plasma processing chamber of the plasma processing apparatus shown in FIG. 6. FIG.
FIG. 8 is a process drawing that explains the manufacturing method of the display apparatus of the first embodiment of the present invention.
FIG. 9 is a process drawing that explains the manufacturing method of the display apparatus of the first embodiment of the present invention.
FIG. 10 is a schematic plan view showing another example of the plasma processing apparatus used for manufacturing the display device according to the first embodiment of the present invention.
FIG. 11 is a process drawing that explains the manufacturing method of the display apparatus of the first embodiment of the present invention.
FIG. 12 is a process drawing that explains the manufacturing method of the display apparatus of the first embodiment of the present invention.
FIG. 13 is a process drawing that explains the manufacturing method of the display apparatus of the first embodiment of the present invention.
FIG. 14 is a plan view showing a head used when manufacturing the display device according to the first embodiment of the present invention;
FIG. 15 is a plan view showing the ink jet device used when manufacturing the display device according to the first embodiment of the present invention.
FIG. 16 is a process drawing that explains the manufacturing method of the display apparatus of the first embodiment of the present invention.
FIG. 17 is a process drawing that explains a manufacturing method of a display apparatus of a first embodiment of the present invention.
FIG. 18 is a process drawing that explains a manufacturing method of a display apparatus of a first embodiment of the present invention.
FIG. 19 is a process drawing that explains a manufacturing method of a display apparatus of a first embodiment of the present invention.
FIG. 20 is a process drawing that explains a manufacturing method of a display apparatus of a first embodiment of the present invention.
FIG. 21 is a perspective view showing an electronic apparatus according to a second embodiment of the present invention.
FIG. 22 is a schematic cross-sectional view showing another example display device according to the present invention.
FIG. 23 is a schematic cross-sectional view showing another example display device according to the present invention.
FIG. 24 is a schematic plan view showing the arrangement of the light emitting layers, where (a) shows a stripe arrangement, (b) shows a mosaic arrangement, and (c) shows a delta arrangement.
FIG. 25 is a cross-sectional view showing a main part of a conventional display device.
[Explanation of symbols]
1 Display device
2 Substrate
2a Display area
2b Non-display area
3 Sealing part
6a Drive IC (Drive circuit)
10 Display element
11 Light emitting element
12 Cathode ((Counter electrode (light emitting element))
110 Functional layer (light emitting device)
110a Hole injection / transport layer (functional layer)
110a1 flat part
110a2 peripheral edge
110b Light emitting layer (functional layer)
111 pixel electrode ((electrode) light emitting element)
111a electrode surface
112 Bank
112a First bank layer (inorganic bank layer)
112b Second bank layer (organic bank layer)
112c Lower opening (inorganic bank layer side opening (wall surface))
112d Upper opening (opening (wall surface) on the organic bank layer side)
112e Upper surface (upper surface of inorganic bank layer)
112f Upper surface (upper surface of organic bank layer)
112g opening
A Pixel area

Claims (21)

A method of manufacturing a display device in which a functional layer is formed on each of a plurality of electrodes formed on a substrate, and a bank unit is provided between the plurality of functional layers.
A bank part forming step of forming the bank part so as to partially overlap each of the plurality of electrodes;
A lyophilic step of treating at least a part of each of the plurality of electrodes to be lyophilic,
A liquid repellency process for treating a part of the surface of the bank portion with liquid repellency;
Hole injection / transport layer forming step of forming a hole injection / transport layer by discharging a first composition containing a hole injection / transport layer forming material and a polar solvent and drying the first composition When,
A surface modification step of applying a first nonpolar solvent to the surface of the hole injection / transport layer, and surface modifying the surface of the hole injection / transport layer;
After the surface modification step, a light emitting layer forming material and a second composition containing a second non-polar solvent are discharged onto the hole injection / transport layer, and light is emitted by drying the second composition. A light emitting layer forming step of forming a layer;
A counter electrode forming step of forming a counter electrode on the light emitting layer;
A method of manufacturing a display device, comprising:   The method for manufacturing a display device according to claim 1, wherein the first nonpolar solvent is the same solvent as the second nonpolar solvent or a solvent similar to the second nonpolar solvent.   The first nonpolar solvent is any one of cyclohexylbenzene, dihydrobenzofuran, trimethylbenzene, tetramethylbenzene, toluene, xylene, or a mixture thereof. Item 3. A method for manufacturing a display device according to Item 2.   The said bank part is formed from the 1st bank layer and the 2nd bank layer, The said 1st bank layer is formed so that it may overlap with a part of said electrode, The any one of Claim 1 to 3 characterized by the above-mentioned. A method for manufacturing the display device according to claim 1. The method for manufacturing a display device according to claim 4, wherein the first bank layer is formed of any one of SiO ₂ and TiO ₂ .   The method for manufacturing a display device according to claim 4, wherein the second bank layer is made of either an acrylic resin or a polyimide resin. A method of manufacturing a display device, wherein a plurality of light emitting elements are formed on one surface of a substrate, and a bank portion is provided between the plurality of light emitting elements.
A first step of forming the bank portion on the substrate;
A second step of forming a hole injection / transport layer by applying a first composition containing a hole injection / transport layer forming material and a polar solvent to a region surrounded by the bank;
A third step of forming a light emitting layer by applying a second composition containing a first nonpolar solvent on the surface of the hole injection / transport layer opposite to the substrate;
Comprising
Between the second step and the third step, a fourth step of applying a third composition containing a second nonpolar solvent on the surface of the hole injection / transport layer opposite to the substrate. A method for manufacturing a display device, comprising:   The method for manufacturing a display device according to claim 7, wherein the first composition includes a mixture of a polythiophene derivative and polystyrenesulfonic acid.   9. The method for manufacturing a display device according to claim 7, wherein the third composition contains the same material as the hole transporting material contained in the first composition.   10. The method according to claim 7, wherein the second non-polar solvent is the same solvent as the first non-polar solvent or a solvent similar to the first non-polar solvent. The manufacturing method of the display apparatus of description.   The second nonpolar solvent is any one of cyclohexylbenzene, dihydrobenzofuran, trimethylbenzene, tetramethylbenzene, toluene, xylene, or a mixture thereof. Item 11. A method for manufacturing a display device according to any one of Items 10 to 10. The bank portion is formed of a first bank layer and a second bank layer, the first bank layer is formed of any one of SiO ₂ and TiO ₂ , and the second bank layer is an acrylic resin or polyimide. The method for manufacturing a display device according to any one of claims 7 to 11, wherein the display device is formed of any one of resins. A method for manufacturing a display device, wherein a light emitting element having a light emitting layer and a hole injection / transport layer formed on any surface side of the light emitting layer is formed on a substrate,
Applying a first composition containing a polar solvent to form the hole injection / transport layer;
Applying a second composition containing a first nonpolar solvent to form the light emitting layer;
Including
A third step of applying a third composition containing a second nonpolar solvent on the surface of the hole injection / transport layer facing any one of the surfaces between the first step and the second step A method for manufacturing a display device, comprising:   14. The method of manufacturing a display device according to claim 13, wherein the second nonpolar solvent is the same solvent as the first nonpolar solvent or a solvent similar to the first nonpolar solvent.   15. The method for manufacturing a display device according to claim 13, wherein the third composition contains the same material as the hole transporting material contained in the first composition.   16. The method according to claim 13, wherein the second nonpolar solvent is any one of cyclohexylbenzene, dihydrobenzofuran, trimethylbenzene, tetramethylbenzene, toluene, and xylene. 2. A method for manufacturing a display device according to item 1.   A display device manufactured by the method for manufacturing a display device according to claim 1. A display device in which a functional layer is formed on each of a plurality of electrodes formed on a substrate, and a bank unit is provided between the plurality of functional layers, and a drive circuit for driving the display device And an electronic device manufacturing method comprising:
A bank part forming step of forming the bank part so as to partially overlap each of the plurality of electrodes;
A lyophilic step of processing at least a part of each of the plurality of electrodes to be lyophilic,
A lyophobic process for processing the surface of the bank part to be lyophobic;
Hole injection / transport layer forming step of forming a hole injection / transport layer by discharging a first composition containing a hole injection / transport layer forming material and a polar solvent and drying the first composition When,
A surface modification step of applying a first nonpolar solvent to the surface of the hole injection / transport layer, and surface modifying the surface of the hole injection / transport layer;
After the surface modification step, a second composition containing a light emitting layer forming material and a second non-polar solvent is discharged onto the hole injection / transport layer, and the second composition is dried. A light emitting layer forming step of forming a light emitting layer;
A counter electrode forming step of forming a counter electrode on the light emitting layer;
A method of manufacturing an electronic device, comprising: A display device in which a plurality of light emitting elements are formed on one surface of a substrate and a bank portion is provided between the light emitting elements, and a drive circuit for driving the display device. A method of manufacturing an electronic device,
A first step of forming the bank portion at a predetermined position of the substrate;
A second step of forming a hole injection / transport layer by applying a first composition containing a hole injection / transport layer forming material and a polar solvent between the bank portions;
A third step of forming a light emitting layer by applying a second composition containing a first nonpolar solvent on the surface of the hole injection / transport layer opposite to the substrate;
Comprising
Between the second step and the third step, a fourth step of applying a third composition containing a second nonpolar solvent on the surface of the hole injection / transport layer opposite to the substrate. A method for manufacturing an electronic device, comprising: A display device in which a light emitting element having a light emitting layer and a hole injection / transport layer formed on either side of the light emitting layer is formed in a matrix on a substrate, and driving the display device A drive circuit for manufacturing an electronic device comprising:
Applying a first composition containing a polar solvent to form the hole injection / transport layer;
Applying a second composition containing a first nonpolar solvent to form the light emitting layer;
Including
A third step of applying a third composition containing a second nonpolar solvent on the surface of the hole injection / transport layer facing any one of the surfaces between the first step and the second step The manufacturing method of the electronic device characterized by having.   21. An electronic device manufactured by the method for manufacturing an electronic device according to any one of claims 18 to 20.

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