JP3949479B2 - ポジ型レジスト組成物 - Google Patents

ポジ型レジスト組成物 Download PDF

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Publication number
JP3949479B2
JP3949479B2 JP2002084074A JP2002084074A JP3949479B2 JP 3949479 B2 JP3949479 B2 JP 3949479B2 JP 2002084074 A JP2002084074 A JP 2002084074A JP 2002084074 A JP2002084074 A JP 2002084074A JP 3949479 B2 JP3949479 B2 JP 3949479B2
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Japan
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group
acid
formula
carbon atoms
atom
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Expired - Lifetime
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JP2002084074A
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English (en)
Japanese (ja)
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JP2003280202A5 (enrdf_load_stackoverflow
JP2003280202A (ja
Inventor
一良 水谷
慎一 漢那
知也 佐々木
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Fujifilm Corp
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Fujifilm Corp
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Priority to JP2002084074A priority Critical patent/JP3949479B2/ja
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  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Materials For Photolithography (AREA)
JP2002084074A 2002-03-25 2002-03-25 ポジ型レジスト組成物 Expired - Lifetime JP3949479B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002084074A JP3949479B2 (ja) 2002-03-25 2002-03-25 ポジ型レジスト組成物

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002084074A JP3949479B2 (ja) 2002-03-25 2002-03-25 ポジ型レジスト組成物

Publications (3)

Publication Number Publication Date
JP2003280202A JP2003280202A (ja) 2003-10-02
JP2003280202A5 JP2003280202A5 (enrdf_load_stackoverflow) 2005-04-07
JP3949479B2 true JP3949479B2 (ja) 2007-07-25

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JP2002084074A Expired - Lifetime JP3949479B2 (ja) 2002-03-25 2002-03-25 ポジ型レジスト組成物

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JP (1) JP3949479B2 (enrdf_load_stackoverflow)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4295052B2 (ja) * 2003-07-23 2009-07-15 ダイセル化学工業株式会社 フッ素原子含有重合性不飽和単量体、フッ素原子含有高分子化合物及びフォトレジスト用樹脂組成物
JP4347110B2 (ja) 2003-10-22 2009-10-21 東京応化工業株式会社 電子線又はｅｕｖ用ポジ型レジスト組成物
JP5518394B2 (ja) * 2008-08-13 2014-06-11 東京応化工業株式会社 ポジ型レジスト組成物及びレジストパターン形成方法
JP5560115B2 (ja) * 2010-06-28 2014-07-23 富士フイルム株式会社 パターン形成方法、化学増幅型レジスト組成物、及び、レジスト膜
JP6195692B2 (ja) * 2010-08-30 2017-09-13 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法並びに新規化合物及び樹脂
JP5194135B2 (ja) * 2011-02-04 2013-05-08 富士フイルム株式会社 化学増幅ポジ型レジスト組成物、並びに、それを用いたレジスト膜、レジスト塗布マスクブランクス、及び、レジストパターン形成方法
JP5833948B2 (ja) * 2011-02-25 2015-12-16 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法
JP5829941B2 (ja) * 2011-02-25 2015-12-09 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法
JP5829943B2 (ja) * 2011-02-25 2015-12-09 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法
JP5829940B2 (ja) * 2011-02-25 2015-12-09 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法
JP5829942B2 (ja) * 2011-02-25 2015-12-09 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法
JP2013079232A (ja) * 2011-09-30 2013-05-02 Rohm & Haas Electronic Materials Llc 光酸発生剤およびこれを含むフォトレジスト
JP6326825B2 (ja) * 2013-02-18 2018-05-23 住友化学株式会社 塩、レジスト組成物及びレジストパターンの製造方法
JP2018072358A (ja) * 2015-03-02 2018-05-10 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物及び感活性光線性又は感放射線性膜
US11782345B2 (en) * 2019-08-05 2023-10-10 Taiwan Semiconductor Manufacturing Co., Ltd. Bottom antireflective coating materials
DE102019134535B4 (de) * 2019-08-05 2023-09-07 Taiwan Semiconductor Manufacturing Co., Ltd. Materialien für unteren antireflexbelag

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