JP3936955B2 - Cmosイメージセンサの製造方法 - Google Patents
Cmosイメージセンサの製造方法 Download PDFInfo
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- JP3936955B2 JP3936955B2 JP2004369144A JP2004369144A JP3936955B2 JP 3936955 B2 JP3936955 B2 JP 3936955B2 JP 2004369144 A JP2004369144 A JP 2004369144A JP 2004369144 A JP2004369144 A JP 2004369144A JP 3936955 B2 JP3936955 B2 JP 3936955B2
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- 238000004519 manufacturing process Methods 0.000 title claims description 23
- 239000012535 impurity Substances 0.000 claims description 65
- 150000002500 ions Chemical class 0.000 claims description 51
- 238000002955 isolation Methods 0.000 claims description 43
- 238000000034 method Methods 0.000 claims description 38
- 239000000758 substrate Substances 0.000 claims description 30
- 239000004065 semiconductor Substances 0.000 claims description 14
- 238000009792 diffusion process Methods 0.000 claims description 13
- 229920002120 photoresistant polymer Polymers 0.000 claims description 6
- 229910015900 BF3 Inorganic materials 0.000 claims description 4
- 238000002513 implantation Methods 0.000 claims description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 3
- 229910052796 boron Inorganic materials 0.000 claims description 3
- 238000000638 solvent extraction Methods 0.000 claims description 3
- -1 boron fluoride ions Chemical class 0.000 claims description 2
- 238000005468 ion implantation Methods 0.000 description 23
- 230000007547 defect Effects 0.000 description 7
- 108091006149 Electron carriers Proteins 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- WTEOIRVLGSZEPR-UHFFFAOYSA-N boron trifluoride Chemical compound FB(F)F WTEOIRVLGSZEPR-UHFFFAOYSA-N 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14689—MOS based technologies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1463—Pixel isolation structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
Description
このような状態で、基板の全面上に低濃度の不純物イオン、例えばn型の不純物イオンを注入して基板の内部にLDD構造のための低濃度の不純物領域(LDD n-)を形成する。
CMOSイメージセンサを構成する複数のゲート電極とオーバーラップするアクティブ領域において、各々のゲート電極下部のアクティブ領域と、アクティブ領域と隣接する素子分離膜間の境界に高濃度の第1導電型の不純物イオン領域(p+)を形成することにより、後続の工程によるアクティブ領域に第2導電型の不純物イオン注入によりアクティブ領域と素子分離膜間の境界面で誘発される電子キャリア発生の問題点を解決できる。
図5は本発明に係るCMOSイメージセンサの単位画素を示したレイアウトであり、図6は図5のC−C’線による断面構造図であり、図7a乃至7cは図4のC−C’線による工程断面図である。
複数のゲート電極とオーバーラップするアクティブ領域とそれに隣接するアクティブ領域は通常のCMOSイメージセンサ製造工程によりLDD構造のための拡散領域、ソース/ドレイン領域またはフローティング拡散領域などを形成するための第2導電型の不純物イオンが注入される領域である。
また、本発明の実施例は3T型CMOSイメージセンサを中心に説明したが、アクティブ領域と素子分離膜の境界面でのイオン注入による基板損傷の防止という技術的思想を反映することにおいて、3T型以上のあらゆるCMOSイメージセンサに同一に適用できることは勿論である。
602 素子分離膜
604 高濃度の第1導電型の不純物イオン領域
605 ゲート絶縁膜
606 ゲート電極
Claims (7)
- 第1導電型の半導体基板上にアクティブ領域を区画する素子分離膜を形成する段階と、
トランジスタのゲート電極が形成される基板上の部分で、アクティブ領域の前記素子分離膜に接する所定部位と前記素子分離膜の前記アクティブ領域と接する所定部位とを露出させる第1感光膜パターンを形成する段階と、
前記アクティブ領域に第2導電型の不純物イオンを注入する前に、前記基板の全面上に高濃度の第1導電型の不純物イオンを注入して、前記露出させたアクティブ領域の部位に高濃度の第1導電型の不純物イオン領域を形成する段階とを含んでいることを特徴とするCMOSイメージセンサの製造方法。 - 前記高濃度の第1導電型の不純物イオン領域を形成した後、
前記アクティブ領域と素子分離膜上にゲート絶縁膜及びゲート電極を順次形成する段階と、
前記素子分離膜及び高濃度の第1導電型の不純物イオン領域が形成された部位を露出させないように第2感光膜パターンを形成する段階とをさらに含んでいることを特徴とする請求項1に記載のCMOSイメージセンサの製造方法。 - 前記高濃度の第1導電型の不純物イオン領域は200〜400Åの幅で形成することを特徴とする請求項1に記載のCMOSイメージセンサの製造方法。
- 前記高濃度の第1導電型の不純物イオン領域は1E12〜1E15ions/cm2の濃度に注入して形成することを特徴とする請求項1に記載のCMOSイメージセンサの製造方法。
- 前記第1導電型の不純物イオンはホウ素またはフッ化ホウ素イオンのうち、何れか一つのイオンであることを特徴とする請求項1に記載のCMOSイメージセンサの製造方法。
- 前記第1感光膜パターンで露出する素子分離膜の幅は50〜2500Åであることを特徴とする請求項1に記載のCMOSイメージセンサの製造方法。
- 前記第2感光膜パターンにより露出する領域はLDD構造のための拡散領域、ソース/ドレイン領域またはフローティング拡散領域のうち、何れか一つの領域を形成するために第2導電型の不純物イオンが注入される領域であることを特徴とする請求項2に記載のCMOSイメージセンサの製造方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020030101552A KR100603247B1 (ko) | 2003-12-31 | 2003-12-31 | 시모스 이미지 센서 및 그 제조방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005197681A JP2005197681A (ja) | 2005-07-21 |
JP3936955B2 true JP3936955B2 (ja) | 2007-06-27 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2004369144A Expired - Fee Related JP3936955B2 (ja) | 2003-12-31 | 2004-12-21 | Cmosイメージセンサの製造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20050139878A1 (ja) |
JP (1) | JP3936955B2 (ja) |
KR (1) | KR100603247B1 (ja) |
CN (1) | CN1641884A (ja) |
DE (1) | DE102004062970A1 (ja) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101158955B1 (ko) * | 2005-01-24 | 2012-06-21 | 모멘티브 파포만스 마테리아루즈 쟈판 고도가이샤 | 발광 소자 밀봉용 실리콘 조성물과 발광 장치 |
JP5320659B2 (ja) | 2005-12-05 | 2013-10-23 | ソニー株式会社 | 固体撮像装置 |
KR100685889B1 (ko) * | 2005-12-29 | 2007-02-26 | 동부일렉트로닉스 주식회사 | 씨모스 이미지센서의 제조방법 |
US7521742B2 (en) | 2006-06-05 | 2009-04-21 | Samsung Electronics Co., Ltd. | Complementary metal oxide semiconductor (CMOS) image sensor |
KR100825803B1 (ko) | 2007-02-13 | 2008-04-29 | 삼성전자주식회사 | 커플링 방지용 전극 배선층을 구비한 트랜지스터 및 그제조방법과 상기 트랜지스터를 구비한 이미지 센서 |
JP4420039B2 (ja) * | 2007-02-16 | 2010-02-24 | ソニー株式会社 | 固体撮像装置 |
CN101271909B (zh) * | 2007-03-22 | 2010-10-27 | 力晶半导体股份有限公司 | 图像传感器及其制作方法 |
US8072015B2 (en) * | 2007-06-04 | 2011-12-06 | Sony Corporation | Solid-state imaging device and manufacturing method thereof |
JP5558859B2 (ja) * | 2010-02-18 | 2014-07-23 | キヤノン株式会社 | 固体撮像装置および固体撮像装置の製造方法 |
US9184191B2 (en) * | 2013-10-17 | 2015-11-10 | Micron Technology, Inc. | Method providing an epitaxial photonic device having a reduction in defects and resulting structure |
JP6279332B2 (ja) * | 2014-01-21 | 2018-02-14 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
KR102274182B1 (ko) | 2014-08-01 | 2021-07-06 | 삼성전자주식회사 | 반도체 장치와 이를 위한 제조 방법 |
KR102301778B1 (ko) | 2014-08-28 | 2021-09-13 | 삼성전자주식회사 | 이미지 센서, 및 상기 이미지 센서의 픽셀 |
Family Cites Families (14)
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SE462665B (sv) * | 1988-12-22 | 1990-08-06 | Saab Scania Ab | Givare till en klimatanlaeggning foer fordon |
JPH06123654A (ja) * | 1992-08-25 | 1994-05-06 | Nippondenso Co Ltd | 日射センサ |
NL1011381C2 (nl) * | 1998-02-28 | 2000-02-15 | Hyundai Electronics Ind | Fotodiode voor een CMOS beeldsensor en werkwijze voor het vervaardigen daarvan. |
US6084228A (en) * | 1998-11-09 | 2000-07-04 | Control Devices, Inc. | Dual zone solar sensor |
US6294809B1 (en) * | 1998-12-28 | 2001-09-25 | Vantis Corporation | Avalanche programmed floating gate memory cell structure with program element in polysilicon |
US6333205B1 (en) * | 1999-08-16 | 2001-12-25 | Micron Technology, Inc. | CMOS imager with selectively silicided gates |
US20020072169A1 (en) * | 2000-11-29 | 2002-06-13 | Shigeki Onodera | CMOS device and method of manufacturing the same |
EP1233453A3 (en) * | 2001-02-19 | 2005-03-23 | Kawasaki Microelectronics, Inc. | Semiconductor integrated circuit having anti-fuse, method of fabricating, and method of writing data in the same |
TW548835B (en) * | 2001-08-30 | 2003-08-21 | Sony Corp | Semiconductor device and production method thereof |
KR100494030B1 (ko) * | 2002-01-10 | 2005-06-10 | 매그나칩 반도체 유한회사 | 이미지센서 및 그 제조 방법 |
JP2004014861A (ja) * | 2002-06-07 | 2004-01-15 | Renesas Technology Corp | 半導体装置および半導体装置の製造方法 |
US6974715B2 (en) * | 2002-12-27 | 2005-12-13 | Hynix Semiconductor Inc. | Method for manufacturing CMOS image sensor using spacer etching barrier film |
US7087944B2 (en) * | 2003-01-16 | 2006-08-08 | Micron Technology, Inc. | Image sensor having a charge storage region provided within an implant region |
US7164161B2 (en) * | 2003-11-18 | 2007-01-16 | Micron Technology, Inc. | Method of formation of dual gate structure for imagers |
-
2003
- 2003-12-31 KR KR1020030101552A patent/KR100603247B1/ko not_active IP Right Cessation
-
2004
- 2004-12-21 JP JP2004369144A patent/JP3936955B2/ja not_active Expired - Fee Related
- 2004-12-27 CN CNA2004101026895A patent/CN1641884A/zh active Pending
- 2004-12-28 US US11/022,886 patent/US20050139878A1/en not_active Abandoned
- 2004-12-28 DE DE102004062970A patent/DE102004062970A1/de not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
CN1641884A (zh) | 2005-07-20 |
KR20050069443A (ko) | 2005-07-05 |
US20050139878A1 (en) | 2005-06-30 |
KR100603247B1 (ko) | 2006-07-20 |
JP2005197681A (ja) | 2005-07-21 |
DE102004062970A1 (de) | 2005-10-06 |
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