JP3924810B2 - 圧電素子とその製造方法 - Google Patents

圧電素子とその製造方法 Download PDF

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Publication number
JP3924810B2
JP3924810B2 JP18455796A JP18455796A JP3924810B2 JP 3924810 B2 JP3924810 B2 JP 3924810B2 JP 18455796 A JP18455796 A JP 18455796A JP 18455796 A JP18455796 A JP 18455796A JP 3924810 B2 JP3924810 B2 JP 3924810B2
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JP
Japan
Prior art keywords
substrate
substrates
forming
bonding
piezoelectric
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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JP18455796A
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English (en)
Japanese (ja)
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JPH0992895A (ja
JPH0992895A5 (enExample
Inventor
昭彦 南波
哲義 小掠
佳宏 冨田
和生 江田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Panasonic Holdings Corp
Original Assignee
Panasonic Corp
Matsushita Electric Industrial Co Ltd
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Priority to JP18455796A priority Critical patent/JP3924810B2/ja
Publication of JPH0992895A publication Critical patent/JPH0992895A/ja
Publication of JPH0992895A5 publication Critical patent/JPH0992895A5/ja
Application granted granted Critical
Publication of JP3924810B2 publication Critical patent/JP3924810B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
JP18455796A 1995-07-19 1996-07-15 圧電素子とその製造方法 Expired - Fee Related JP3924810B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18455796A JP3924810B2 (ja) 1995-07-19 1996-07-15 圧電素子とその製造方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP7-182468 1995-07-19
JP18246895 1995-07-19
JP18455796A JP3924810B2 (ja) 1995-07-19 1996-07-15 圧電素子とその製造方法

Publications (3)

Publication Number Publication Date
JPH0992895A JPH0992895A (ja) 1997-04-04
JPH0992895A5 JPH0992895A5 (enExample) 2004-07-15
JP3924810B2 true JP3924810B2 (ja) 2007-06-06

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JP18455796A Expired - Fee Related JP3924810B2 (ja) 1995-07-19 1996-07-15 圧電素子とその製造方法

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JP (1) JP3924810B2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10297578B2 (en) 2017-03-07 2019-05-21 Toshiba Memory Corporation Memory device

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010073196A (ko) * 1997-04-24 2001-07-31 다니구찌 이찌로오, 기타오카 다카시 박막 압전 소자 및 박막 압전 소자의 제조 방법 및 회로소자
US6236141B1 (en) 1998-12-14 2001-05-22 Matsushita Electric Industrial Co., Ltd. Surface acoustic wave element
JP2002141576A (ja) * 2000-11-02 2002-05-17 Fujitsu Ltd ピエゾ素子と電極との接合方法及び該接合方法を使用したピエゾマイクロアクチュエータ
JP2003007645A (ja) * 2001-06-22 2003-01-10 Japan Radio Co Ltd 電子デバイスパッケージの製造方法及びそれに関するウエハ
JP4653374B2 (ja) * 2001-08-23 2011-03-16 セイコーエプソン株式会社 電気光学装置の製造方法
KR101171189B1 (ko) * 2005-10-21 2012-08-06 삼성전자주식회사 더미 글래스 기판과 표시장치의 제조방법
JP2007189501A (ja) * 2006-01-13 2007-07-26 Matsushita Electric Ind Co Ltd 電子部品
WO2007115379A1 (en) 2006-04-12 2007-10-18 James Hardie International Finance B.V. A surface sealed reinforced building element
JP5180889B2 (ja) * 2009-03-25 2013-04-10 日本碍子株式会社 複合基板、それを用いた弾性波デバイス及び複合基板の製法
JP4863097B2 (ja) 2009-08-11 2012-01-25 株式会社村田製作所 弾性表面波素子の製造方法
JP5720152B2 (ja) * 2010-09-06 2015-05-20 富士通株式会社 振動子の作製方法、振動子および発振器
DE102011016566A1 (de) 2011-03-07 2012-09-13 Osram Opto Semiconductors Gmbh Leiterrahmen für optoelektronische Bauelemente und Verfahren zur Herstellung optoelektronischer Bauelemente
WO2014024611A1 (ja) * 2012-08-09 2014-02-13 富士電機株式会社 半導体装置の製造方法
EP2736169B1 (en) 2012-08-17 2016-09-14 NGK Insulators, Ltd. Composite substrate, elastic surface wave device, and method for producing composite substrate
CN104871431B (zh) * 2012-12-26 2018-04-10 日本碍子株式会社 复合基板及其制造方法，以及弹性波装置
FR3037443B1 (fr) 2015-06-12 2018-07-13 Soitec Heterostructure et methode de fabrication
FR3039003B1 (fr) * 2015-07-17 2017-07-28 Soitec Silicon On Insulator Procede de fabrication d'un substrat
JP6939761B2 (ja) * 2018-12-21 2021-09-22 株式会社村田製作所 弾性波装置、及び電子部品モジュール
CN113394336A (zh) * 2021-05-17 2021-09-14 中国科学院上海硅酸盐研究所 梯度压电复合材料及其制造方法、以及压电换能器
JP7075529B1 (ja) * 2021-06-11 2022-05-25 日本碍子株式会社 複合基板および複合基板の製造方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10297578B2 (en) 2017-03-07 2019-05-21 Toshiba Memory Corporation Memory device
US10741527B2 (en) 2017-03-07 2020-08-11 Toshiba Memory Corporation Memory device
US11270980B2 (en) 2017-03-07 2022-03-08 Kioxia Corporation Memory device

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Publication number Publication date
JPH0992895A (ja) 1997-04-04

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