JP3904378B2 - 酸化亜鉛透明導電膜 - Google Patents

酸化亜鉛透明導電膜 Download PDF

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Publication number
JP3904378B2
JP3904378B2 JP2000234945A JP2000234945A JP3904378B2 JP 3904378 B2 JP3904378 B2 JP 3904378B2 JP 2000234945 A JP2000234945 A JP 2000234945A JP 2000234945 A JP2000234945 A JP 2000234945A JP 3904378 B2 JP3904378 B2 JP 3904378B2
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Japan
Prior art keywords
type dopant
group
zinc oxide
doped
elements
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Expired - Fee Related
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JP2000234945A
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English (en)
Japanese (ja)
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JP2002050229A5 (https=
JP2002050229A (ja
Inventor
哲也 山本
健 中原
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Rohm Co Ltd
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Rohm Co Ltd
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Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Priority to JP2000234945A priority Critical patent/JP3904378B2/ja
Priority to US09/920,292 priority patent/US6569548B2/en
Publication of JP2002050229A publication Critical patent/JP2002050229A/ja
Publication of JP2002050229A5 publication Critical patent/JP2002050229A5/ja
Application granted granted Critical
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/123—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe
    • H10F77/1233—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/138—Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • H10F77/251—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers comprising zinc oxide [ZnO]
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K2323/00—Functional layers of liquid crystal optical display excluding electroactive liquid crystal layer characterised by chemical composition
    • C09K2323/05—Bonding or intermediate layer characterised by chemical composition, e.g. sealant or spacer
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K2323/00—Functional layers of liquid crystal optical display excluding electroactive liquid crystal layer characterised by chemical composition
    • C09K2323/05—Bonding or intermediate layer characterised by chemical composition, e.g. sealant or spacer
    • C09K2323/051—Inorganic, e.g. glass or silicon oxide
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

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  • Non-Insulated Conductors (AREA)
  • Liquid Crystal (AREA)
  • Surface Treatment Of Optical Elements (AREA)
  • Photovoltaic Devices (AREA)
JP2000234945A 2000-08-02 2000-08-02 酸化亜鉛透明導電膜 Expired - Fee Related JP3904378B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2000234945A JP3904378B2 (ja) 2000-08-02 2000-08-02 酸化亜鉛透明導電膜
US09/920,292 US6569548B2 (en) 2000-08-02 2001-08-02 Transparent conductive film of zinc oxide

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000234945A JP3904378B2 (ja) 2000-08-02 2000-08-02 酸化亜鉛透明導電膜

Publications (3)

Publication Number Publication Date
JP2002050229A JP2002050229A (ja) 2002-02-15
JP2002050229A5 JP2002050229A5 (https=) 2006-03-30
JP3904378B2 true JP3904378B2 (ja) 2007-04-11

Family

ID=18727236

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000234945A Expired - Fee Related JP3904378B2 (ja) 2000-08-02 2000-08-02 酸化亜鉛透明導電膜

Country Status (2)

Country Link
US (1) US6569548B2 (https=)
JP (1) JP3904378B2 (https=)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7098591B1 (en) * 1999-12-17 2006-08-29 Osram Opto Semiconductors Gmbh Transparent electrode material for quality enhancement of OLED devices
JP3826755B2 (ja) * 2001-09-28 2006-09-27 株式会社村田製作所 ＺｎＯ膜及びその製造方法並びに発光素子
JP2004017994A (ja) * 2002-06-13 2004-01-22 Thermos Kk 断熱容器およびその製造方法
TW589672B (en) * 2002-12-31 2004-06-01 Ind Tech Res Inst Method of manufacturing p-type transparent conductive film and its system
US7786550B2 (en) 2003-03-06 2010-08-31 Panasonic Corporation P-type semiconductor and semiconductor hetero material and manufacturing methods thereof
KR100571818B1 (ko) * 2003-10-08 2006-04-17 삼성전자주식회사 질화물계 발광소자 및 그 제조방법
US7061026B2 (en) * 2004-04-16 2006-06-13 Arima Optoelectronics Corp. High brightness gallium nitride-based light emitting diode with transparent conducting oxide spreading layer
EP1897968B1 (en) * 2005-06-28 2013-08-07 JX Nippon Mining & Metals Corporation Gallium oxide-zinc oxide sputtering target, method of forming transparent conductive film and transparent conductive film
RU2380455C2 (ru) * 2005-06-28 2010-01-27 Ниппон Майнинг Энд Металз Ко., Лтд. Распыляемая мишень на основе оксид галлия-оксид цинка, способ формирования прозрачной проводящей пленки и прозрачная проводящая пленка
JP5396579B2 (ja) * 2005-08-18 2014-01-22 国立大学法人山梨大学 酸化亜鉛薄膜の製造方法及び製造装置
US7674404B2 (en) * 2005-12-08 2010-03-09 Nippon Mining & Metals Co., Ltd. Gallium oxide/zinc oxide sputtering target, method of forming transparent conductive film and transparent conductive film
KR101028985B1 (ko) 2006-03-17 2011-04-12 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 산화아연계 투명 도전체 및 동 투명 도전체 형성용 스퍼터링 타겟
EP2056304A4 (en) * 2006-08-24 2010-06-16 Nippon Mining Co ZINKOXIDE-BASED TRANSPARENT ELECTRICAL LADDER, SPUTTER TARGET FOR FORMING THE LADDER AND PROCESS FOR PRODUCING THE TARGET
US8163342B2 (en) * 2006-08-29 2012-04-24 Pilkington Group Limited Method of making low resisitivity doped zinc oxide coatings and the articles formed thereby
US8835756B2 (en) * 2006-12-21 2014-09-16 Rutgers, The State University Of New Jersey Zinc oxide photoelectrodes and methods of fabrication
US8747630B2 (en) 2007-01-16 2014-06-10 Alliance For Sustainable Energy, Llc Transparent conducting oxides and production thereof
JP4808682B2 (ja) * 2007-08-03 2011-11-02 Ｊｘ日鉱日石金属株式会社 焼結体、透明導電膜の製造方法及び透明導電膜
US8253012B2 (en) * 2008-03-17 2012-08-28 Alliance For Sustainable Energy, Llc High quality transparent conducting oxide thin films
US9528182B2 (en) 2009-06-22 2016-12-27 Arkema Inc. Chemical vapor deposition using N,O polydentate ligand complexes of metals
WO2011025715A1 (en) * 2009-08-24 2011-03-03 First Solar, Inc. Doped transparent conductive oxide
JP5451320B2 (ja) * 2009-10-30 2014-03-26 スタンレー電気株式会社 ＺｎＯ系化合物半導体素子
US8546797B2 (en) 2009-10-20 2013-10-01 Stanley Electric Co., Ltd. Zinc oxide based compound semiconductor device
US20120024360A1 (en) * 2010-07-28 2012-02-02 General Electric Company Photovoltaic device
WO2013119550A1 (en) 2012-02-10 2013-08-15 Alliance For Sustainable Energy, Llc Thin film photovoltaic devices with a minimally conductive buffer layer
US20150270423A1 (en) 2012-11-19 2015-09-24 Alliance For Sustainable Energy, Llc Devices and methods featuring the addition of refractory metals to contact interface layers

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5324365A (en) * 1991-09-24 1994-06-28 Canon Kabushiki Kaisha Solar cell
EP0578046B1 (en) * 1992-07-10 1996-11-06 Asahi Glass Company Ltd. Transparent conductive film, and target and material for vapor deposition to be used for its production

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Publication number Publication date
US6569548B2 (en) 2003-05-27
US20020025440A1 (en) 2002-02-28
JP2002050229A (ja) 2002-02-15

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