JP3876175B2 - シリコン結晶中の窒素濃度測定方法、窒素濃度測定用換算表の作成方法、シリコンウエハの製造方法、及び半導体装置の製造方法 - Google Patents

シリコン結晶中の窒素濃度測定方法、窒素濃度測定用換算表の作成方法、シリコンウエハの製造方法、及び半導体装置の製造方法 Download PDF

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JP3876175B2
JP3876175B2 JP2002074870A JP2002074870A JP3876175B2 JP 3876175 B2 JP3876175 B2 JP 3876175B2 JP 2002074870 A JP2002074870 A JP 2002074870A JP 2002074870 A JP2002074870 A JP 2002074870A JP 3876175 B2 JP3876175 B2 JP 3876175B2
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silicon
nitrogen concentration
silicon crystal
measuring
absorption peak
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JP2003152043A5 (enrdf_load_stackoverflow
JP2003152043A (ja
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克人 棚橋
寛 金田
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Fujitsu Ltd
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JP2002074870A 2001-08-29 2002-03-18 シリコン結晶中の窒素濃度測定方法、窒素濃度測定用換算表の作成方法、シリコンウエハの製造方法、及び半導体装置の製造方法 Expired - Fee Related JP3876175B2 (ja)

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JP2002074870A JP3876175B2 (ja) 2001-08-29 2002-03-18 シリコン結晶中の窒素濃度測定方法、窒素濃度測定用換算表の作成方法、シリコンウエハの製造方法、及び半導体装置の製造方法

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JP2001-259446 2001-08-29
JP2002074870A JP3876175B2 (ja) 2001-08-29 2002-03-18 シリコン結晶中の窒素濃度測定方法、窒素濃度測定用換算表の作成方法、シリコンウエハの製造方法、及び半導体装置の製造方法

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JP2006173070A Division JP4346628B2 (ja) 2001-08-29 2006-06-22 シリコン結晶内窒素濃度算出用の換算係数の決定方法、窒素濃度測定方法、シリコンウエハの製造方法、及び半導体装置の製造方法
JP2006173071A Division JP4346629B2 (ja) 2001-08-29 2006-06-22 シリコン結晶中の窒素濃度測定方法、シリコン結晶内窒素濃度算出用の換算係数の決定方法、シリコンウエハの製造方法、及び半導体装置の製造方法

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JP2003152043A5 JP2003152043A5 (enrdf_load_stackoverflow) 2006-08-10
JP3876175B2 true JP3876175B2 (ja) 2007-01-31

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DE102007029666B4 (de) 2007-06-27 2011-03-17 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zum Bearbeiten eines Substrats
JP4756385B2 (ja) * 2008-01-10 2011-08-24 富士通株式会社 シリコン結晶の製造方法及びシリコンウェハの製造方法
JP4992996B2 (ja) * 2010-05-12 2012-08-08 富士通株式会社 窒素濃度測定方法及び窒素濃度測定用比例換算係数の算出方法
JP6638888B2 (ja) * 2017-03-10 2020-01-29 信越半導体株式会社 シリコン結晶の窒素濃度測定方法

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