JP3875033B2 - 結晶性珪素膜の作製方法 - Google Patents
結晶性珪素膜の作製方法 Download PDFInfo
- Publication number
- JP3875033B2 JP3875033B2 JP2001086935A JP2001086935A JP3875033B2 JP 3875033 B2 JP3875033 B2 JP 3875033B2 JP 2001086935 A JP2001086935 A JP 2001086935A JP 2001086935 A JP2001086935 A JP 2001086935A JP 3875033 B2 JP3875033 B2 JP 3875033B2
- Authority
- JP
- Japan
- Prior art keywords
- silicon film
- film
- amorphous silicon
- crystalline silicon
- crystalline
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 229910021419 crystalline silicon Inorganic materials 0.000 title claims description 144
- 238000004519 manufacturing process Methods 0.000 title claims description 31
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 141
- 229910052759 nickel Inorganic materials 0.000 claims description 109
- 238000010438 heat treatment Methods 0.000 claims description 86
- 229910052751 metal Inorganic materials 0.000 claims description 77
- 239000002184 metal Substances 0.000 claims description 67
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 49
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 46
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 42
- 229910052710 silicon Inorganic materials 0.000 claims description 40
- 239000010703 silicon Substances 0.000 claims description 40
- 238000000034 method Methods 0.000 claims description 34
- 238000002425 crystallisation Methods 0.000 claims description 22
- 230000008025 crystallization Effects 0.000 claims description 21
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 8
- 230000001737 promoting effect Effects 0.000 claims description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 8
- 238000004544 sputter deposition Methods 0.000 claims description 6
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 229910052741 iridium Inorganic materials 0.000 claims description 2
- 229910052742 iron Inorganic materials 0.000 claims description 2
- 229910052763 palladium Inorganic materials 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 239000010408 film Substances 0.000 description 372
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 216
- 239000000758 substrate Substances 0.000 description 53
- 239000010409 thin film Substances 0.000 description 42
- 239000011521 glass Substances 0.000 description 38
- 238000005530 etching Methods 0.000 description 28
- 239000010410 layer Substances 0.000 description 23
- 239000013078 crystal Substances 0.000 description 20
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 16
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 14
- 239000004973 liquid crystal related substance Substances 0.000 description 13
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 12
- 230000007547 defect Effects 0.000 description 12
- 239000000243 solution Substances 0.000 description 10
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 10
- 239000002585 base Substances 0.000 description 9
- 150000002500 ions Chemical class 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 9
- 230000009471 action Effects 0.000 description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 238000009826 distribution Methods 0.000 description 7
- 239000007789 gas Substances 0.000 description 7
- 239000012535 impurity Substances 0.000 description 7
- MQRWBMAEBQOWAF-UHFFFAOYSA-N acetic acid;nickel Chemical compound [Ni].CC(O)=O.CC(O)=O MQRWBMAEBQOWAF-UHFFFAOYSA-N 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 229940078494 nickel acetate Drugs 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 229910000077 silane Inorganic materials 0.000 description 4
- 238000004528 spin coating Methods 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- -1 phosphorus ions Chemical class 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000008151 electrolyte solution Substances 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 229910000078 germane Inorganic materials 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 239000002253 acid Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 238000007743 anodising Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000003472 neutralizing effect Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
Images
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- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
- Recrystallisation Techniques (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001086935A JP3875033B2 (ja) | 1994-09-29 | 2001-03-26 | 結晶性珪素膜の作製方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25911794 | 1994-09-29 | ||
| JP6-259117 | 1994-09-29 | ||
| JP2001086935A JP3875033B2 (ja) | 1994-09-29 | 2001-03-26 | 結晶性珪素膜の作製方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP27170395A Division JP3727387B2 (ja) | 1994-09-29 | 1995-09-26 | 結晶性珪素膜の作製方法、デバイス、液晶表示装置、薄膜トランジスタおよび電子機器 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006271004A Division JP4559397B2 (ja) | 1994-09-29 | 2006-10-02 | 結晶性珪素膜の作製方法、及び薄膜トランジスタの作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2001319880A JP2001319880A (ja) | 2001-11-16 |
| JP2001319880A5 JP2001319880A5 (enExample) | 2004-09-09 |
| JP3875033B2 true JP3875033B2 (ja) | 2007-01-31 |
Family
ID=26543974
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001086935A Expired - Fee Related JP3875033B2 (ja) | 1994-09-29 | 2001-03-26 | 結晶性珪素膜の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3875033B2 (enExample) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5123349B2 (ja) * | 2010-04-19 | 2013-01-23 | Ｈｏｙａ株式会社 | 多階調マスクの製造方法 |
-
2001
- 2001-03-26 JP JP2001086935A patent/JP3875033B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2001319880A (ja) | 2001-11-16 |
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