JP3872925B2 - 研磨装置および半導体装置の製造方法 - Google Patents
研磨装置および半導体装置の製造方法 Download PDFInfo
- Publication number
- JP3872925B2 JP3872925B2 JP2000016951A JP2000016951A JP3872925B2 JP 3872925 B2 JP3872925 B2 JP 3872925B2 JP 2000016951 A JP2000016951 A JP 2000016951A JP 2000016951 A JP2000016951 A JP 2000016951A JP 3872925 B2 JP3872925 B2 JP 3872925B2
- Authority
- JP
- Japan
- Prior art keywords
- functional group
- semiconductor device
- polishing pad
- abrasive grains
- polishing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
- B24D3/34—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents characterised by additives enhancing special physical properties, e.g. wear resistance, electric conductivity, self-cleaning properties
- B24D3/346—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents characterised by additives enhancing special physical properties, e.g. wear resistance, electric conductivity, self-cleaning properties utilised during polishing, or grinding operation
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000016951A JP3872925B2 (ja) | 2000-01-26 | 2000-01-26 | 研磨装置および半導体装置の製造方法 |
| US09/494,656 US6312321B1 (en) | 2000-01-26 | 2000-01-31 | Polishing apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000016951A JP3872925B2 (ja) | 2000-01-26 | 2000-01-26 | 研磨装置および半導体装置の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2001205554A JP2001205554A (ja) | 2001-07-31 |
| JP2001205554A5 JP2001205554A5 (https=) | 2005-06-16 |
| JP3872925B2 true JP3872925B2 (ja) | 2007-01-24 |
Family
ID=18544009
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000016951A Expired - Fee Related JP3872925B2 (ja) | 2000-01-26 | 2000-01-26 | 研磨装置および半導体装置の製造方法 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US6312321B1 (https=) |
| JP (1) | JP3872925B2 (https=) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9902038B2 (en) | 2015-02-05 | 2018-02-27 | Toshiba Memory Corporation | Polishing apparatus, polishing method, and semiconductor manufacturing method |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6773337B1 (en) * | 2000-11-07 | 2004-08-10 | Planar Labs Corporation | Method and apparatus to recondition an ion exchange polish pad |
| JP2002164307A (ja) * | 2000-11-24 | 2002-06-07 | Fujimi Inc | 研磨用組成物およびそれを用いた研磨方法 |
| JP2002200554A (ja) * | 2000-12-28 | 2002-07-16 | Sumitomo Chem Co Ltd | 研磨パッド、それを用いた研磨装置及び研磨方法 |
| CN1209662C (zh) * | 2001-12-17 | 2005-07-06 | 精工爱普生株式会社 | 显示装置及电子机器 |
| US7097541B2 (en) * | 2002-01-22 | 2006-08-29 | Cabot Microelectronics Corporation | CMP method for noble metals |
| US7316603B2 (en) * | 2002-01-22 | 2008-01-08 | Cabot Microelectronics Corporation | Compositions and methods for tantalum CMP |
| US6899596B2 (en) | 2002-02-22 | 2005-05-31 | Agere Systems, Inc. | Chemical mechanical polishing of dual orientation polycrystalline materials |
| US7087187B2 (en) * | 2002-06-06 | 2006-08-08 | Grumbine Steven K | Meta oxide coated carbon black for CMP |
| US7803203B2 (en) | 2005-09-26 | 2010-09-28 | Cabot Microelectronics Corporation | Compositions and methods for CMP of semiconductor materials |
| JP4868840B2 (ja) * | 2005-11-30 | 2012-02-01 | Jsr株式会社 | 半導体装置の製造方法 |
| JP2016004903A (ja) | 2014-06-17 | 2016-01-12 | 株式会社東芝 | 研磨装置、研磨方法、及び半導体装置の製造方法 |
| CN117532492A (zh) * | 2023-11-17 | 2024-02-09 | 华侨大学 | 一种用于二维材料高取向生长的蓝宝石衬底的加工方法 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5658183A (en) * | 1993-08-25 | 1997-08-19 | Micron Technology, Inc. | System for real-time control of semiconductor wafer polishing including optical monitoring |
| JPH0982668A (ja) * | 1995-09-20 | 1997-03-28 | Sony Corp | 研磨用スラリー及びこの研磨用スラリーを用いる研磨方法 |
| US5807165A (en) * | 1997-03-26 | 1998-09-15 | International Business Machines Corporation | Method of electrochemical mechanical planarization |
-
2000
- 2000-01-26 JP JP2000016951A patent/JP3872925B2/ja not_active Expired - Fee Related
- 2000-01-31 US US09/494,656 patent/US6312321B1/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9902038B2 (en) | 2015-02-05 | 2018-02-27 | Toshiba Memory Corporation | Polishing apparatus, polishing method, and semiconductor manufacturing method |
Also Published As
| Publication number | Publication date |
|---|---|
| US6312321B1 (en) | 2001-11-06 |
| JP2001205554A (ja) | 2001-07-31 |
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