JP3858462B2 - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

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Publication number
JP3858462B2
JP3858462B2 JP21511998A JP21511998A JP3858462B2 JP 3858462 B2 JP3858462 B2 JP 3858462B2 JP 21511998 A JP21511998 A JP 21511998A JP 21511998 A JP21511998 A JP 21511998A JP 3858462 B2 JP3858462 B2 JP 3858462B2
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JP
Japan
Prior art keywords
grindstone
semiconductor device
abrasive grains
manufacturing
processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP21511998A
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English (en)
Japanese (ja)
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JP2000049122A (ja
JP2000049122A5 (https=
Inventor
創一 片桐
感 安井
亮成 河合
貞之 西村
雅彦 佐藤
喜雄 河村
茂夫 森山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP21511998A priority Critical patent/JP3858462B2/ja
Priority to US09/359,760 priority patent/US6524961B1/en
Publication of JP2000049122A publication Critical patent/JP2000049122A/ja
Priority to US10/308,088 priority patent/US6723144B2/en
Publication of JP2000049122A5 publication Critical patent/JP2000049122A5/ja
Application granted granted Critical
Publication of JP3858462B2 publication Critical patent/JP3858462B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
    • B24B37/245—Pads with fixed abrasives
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
    • B24D3/02—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent
    • B24D3/20—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially organic
    • B24D3/28—Resins or natural or synthetic macromolecular compounds
    • B24D3/32—Resins or natural or synthetic macromolecular compounds for porous or cellular structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/062—Manufacture or treatment of conductive parts of the interconnections by smoothing of conductive parts, e.g. by planarisation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/092—Manufacture or treatment of dielectric parts thereof by smoothing the dielectric parts

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Grinding Of Cylindrical And Plane Surfaces (AREA)
JP21511998A 1998-07-30 1998-07-30 半導体装置の製造方法 Expired - Fee Related JP3858462B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP21511998A JP3858462B2 (ja) 1998-07-30 1998-07-30 半導体装置の製造方法
US09/359,760 US6524961B1 (en) 1998-07-30 1999-07-22 Semiconductor device fabricating method
US10/308,088 US6723144B2 (en) 1998-07-30 2002-12-03 Semiconductor device fabricating method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21511998A JP3858462B2 (ja) 1998-07-30 1998-07-30 半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2000049122A JP2000049122A (ja) 2000-02-18
JP2000049122A5 JP2000049122A5 (https=) 2004-10-14
JP3858462B2 true JP3858462B2 (ja) 2006-12-13

Family

ID=16667063

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21511998A Expired - Fee Related JP3858462B2 (ja) 1998-07-30 1998-07-30 半導体装置の製造方法

Country Status (2)

Country Link
US (2) US6524961B1 (https=)
JP (1) JP3858462B2 (https=)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3858462B2 (ja) * 1998-07-30 2006-12-13 株式会社日立製作所 半導体装置の製造方法
US20030199238A1 (en) * 2000-01-18 2003-10-23 Shigeo Moriyama Polishing apparatus and method for producing semiconductors using the apparatus
JP3649393B2 (ja) * 2000-09-28 2005-05-18 シャープ株式会社 シリコンウエハの加工方法、シリコンウエハおよびシリコンブロック
JP2002324772A (ja) 2001-04-25 2002-11-08 Hitachi Ltd 半導体装置の製造方法及び製造装置
JP3934388B2 (ja) * 2001-10-18 2007-06-20 株式会社ルネサステクノロジ 半導体装置の製造方法及び製造装置
TW523826B (en) * 2002-03-15 2003-03-11 Mosel Vitelic Inc Determination method of CMP processing time
US7066801B2 (en) * 2003-02-21 2006-06-27 Dow Global Technologies, Inc. Method of manufacturing a fixed abrasive material
US6910951B2 (en) 2003-02-24 2005-06-28 Dow Global Technologies, Inc. Materials and methods for chemical-mechanical planarization
US7300875B2 (en) * 2004-02-11 2007-11-27 Infineon Technologies Richmond, Lp Post metal chemical mechanical polishing dry cleaning
US8048086B2 (en) 2004-02-25 2011-11-01 Femasys Inc. Methods and devices for conduit occlusion
US9238127B2 (en) 2004-02-25 2016-01-19 Femasys Inc. Methods and devices for delivering to conduit
US8052669B2 (en) 2004-02-25 2011-11-08 Femasys Inc. Methods and devices for delivery of compositions to conduits
US8048101B2 (en) 2004-02-25 2011-11-01 Femasys Inc. Methods and devices for conduit occlusion
US7004814B2 (en) * 2004-03-19 2006-02-28 Taiwan Semiconductor Manufacturing Co., Ltd. CMP process control method
JP2005288645A (ja) * 2004-04-01 2005-10-20 Hitachi Maxell Ltd 固定砥粒研削研磨用工具
JP5034262B2 (ja) 2006-02-24 2012-09-26 富士通セミコンダクター株式会社 研磨装置および研磨方法
US7837888B2 (en) * 2006-11-13 2010-11-23 Cabot Microelectronics Corporation Composition and method for damascene CMP
JP2008178886A (ja) * 2007-01-23 2008-08-07 Disco Abrasive Syst Ltd 製品情報の刻印方法
US12171463B2 (en) 2008-10-03 2024-12-24 Femasys Inc. Contrast agent generation and injection system for sonographic imaging
US10070888B2 (en) 2008-10-03 2018-09-11 Femasys, Inc. Methods and devices for sonographic imaging
US9554826B2 (en) 2008-10-03 2017-01-31 Femasys, Inc. Contrast agent injection system for sonographic imaging
DE102008053610B4 (de) * 2008-10-29 2011-03-31 Siltronic Ag Verfahren zum beidseitigen Polieren einer Halbleiterscheibe
WO2010114075A1 (ja) * 2009-03-31 2010-10-07 本田技研工業株式会社 砥石、砥石の製造方法、砥石の製造装置
WO2010140671A1 (ja) * 2009-06-05 2010-12-09 株式会社Sumco シリコンウェーハの研磨方法及びシリコンウェーハ
DE102009047926A1 (de) * 2009-10-01 2011-04-14 Siltronic Ag Verfahren zum Polieren von Halbleiterscheiben
CN104742007B (zh) * 2013-12-30 2017-08-25 中芯国际集成电路制造(北京)有限公司 化学机械研磨装置和化学机械研磨方法
US9105687B1 (en) 2014-04-16 2015-08-11 Nxp B.V. Method for reducing defects in shallow trench isolation
CN111744891B (zh) * 2020-05-22 2022-06-10 西安奕斯伟材料科技有限公司 研磨机吸附台表面的清洁方法
CN114310627A (zh) * 2021-12-30 2022-04-12 西安奕斯伟材料科技有限公司 一种用于对硅片进行抛光的抛光垫和抛光设备

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JP3858462B2 (ja) * 1998-07-30 2006-12-13 株式会社日立製作所 半導体装置の製造方法

Also Published As

Publication number Publication date
US20030084998A1 (en) 2003-05-08
JP2000049122A (ja) 2000-02-18
US6524961B1 (en) 2003-02-25
US6723144B2 (en) 2004-04-20

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