JP3855726B2 - Power module - Google Patents

Power module Download PDF

Info

Publication number
JP3855726B2
JP3855726B2 JP2001324739A JP2001324739A JP3855726B2 JP 3855726 B2 JP3855726 B2 JP 3855726B2 JP 2001324739 A JP2001324739 A JP 2001324739A JP 2001324739 A JP2001324739 A JP 2001324739A JP 3855726 B2 JP3855726 B2 JP 3855726B2
Authority
JP
Japan
Prior art keywords
power module
heat
semiconductor
conductive insulating
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2001324739A
Other languages
Japanese (ja)
Other versions
JP2003133514A (en
Inventor
覚 土居
康司 加藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Panasonic Holdings Corp
Original Assignee
Panasonic Corp
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Corp, Matsushita Electric Industrial Co Ltd filed Critical Panasonic Corp
Priority to JP2001324739A priority Critical patent/JP3855726B2/en
Publication of JP2003133514A publication Critical patent/JP2003133514A/en
Application granted granted Critical
Publication of JP3855726B2 publication Critical patent/JP3855726B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]

Landscapes

  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

PROBLEM TO BE SOLVED: To solve the problem that a conventional power module formed by integrating a plurality of semiconductors is electrically connected to a printed board with a lead frame, but a large dead space remains between the printed board and a heat sink and impedes further miniaturization. SOLUTION: The power module 15 comprises a plurality of semiconductor chips 1, a plurality of heat spreaders 2 supporting the semiconductor chips 1, a heat conductive insulator 5 supporting the heat spreaders 2, and electrodes 3 provided on the plurality of chips 1. The side of the heat conductive insulator is taken as a radiation side and forms electrical connections with the electrodes.

Description

【０００１】
【発明の属する技術分野】
本発明はＩＧＢＴやＭＯＳＦＥＴなどの、電気機器に用いられる半導体装置に関するものである。
【０００２】
【従来の技術】
近年、インバータ装置などのパワー変換装置はさらなる小型化、高効率化が求められている。例えばインバータ装置を小型化する手段のひとつとして、複数のパワーデバイスを一体化したパワーモジュールが使われている。このようなパワーモジュールを用いることにより、パワーデバイスを別々に実装した場合に比べてインバータ回路を小型化することができる。図４は従来のパワーモジュール実装例の一つである。図４のパワーモジュール１４は半導体チップ１、ヒートスプレッダ２、アルミワイヤ１２、熱伝導性絶縁部５、リードフレーム１３から構成される。リードフレーム１３によりプリント基板１０との電気的接続が構成されており、放熱は熱伝導性絶縁部５と放熱材料８を経て、放熱器９に行っている。放熱材料８はパワーモジュール１４と放熱器９の間に空気の層ができて熱伝導が悪化するのを防止するために用いられることが多い。
【０００３】
【発明が解決しようとする課題】
図４の実装例では、リードフレームによりプリント基板と電気的接続を得ているために、プリント基板と放熱器との間のデッドスペースが大きく、さらなる小型化の障害になっている。本発明では上記課題を解決するための小型でかつ高熱伝導なパワーモジュールを提供することを目的とする。
【０００４】
【課題を解決するための手段】
本発明にかかるパワーモジュールは、複数の半導体チップと、この半導体チップを支持するヒートスプレッダと、このヒートスプレッダを支持する熱伝導性絶縁部と、前記半導体チップに設けた電極部とを備え、前記熱伝導性絶縁部側を放熱面とし、前記半導体チップに設けた電極部により電気的接合を行う。このような構成にすることにより、一方の面に半導体の電極を電気的に接合するための電極部を、反対側の面に前記半導体で発生する熱を絶縁して伝導する熱伝導性絶縁部を備え、電極部をプリント基板と接続することにより従来のリードフレームに比べて接続距離を減少させ、非常に小型でかつ高熱伝導性を有するパワーモジュールを提供することができる。
【０００５】
【発明の実施の形態】
本発明にかかるパワーモジュールは、複数の半導体チップと、この半導体チップを支持するヒートスプレッダと、このヒートスプレッダの半導体を実装している面を除く全ての面を保持する熱伝導性絶縁部と、前記半導体チップに設けた電極部とを備え、前記熱伝導性絶縁部を放熱面とし、前記半導体チップに設けた電極部により電気的接合を行う。一方の面に半導体の電極を電気的に接合するための電極部を、反対の面に前記半導体で発生する熱を絶縁して伝導する熱伝導性絶縁部を備えており、電極部をプリント基板と接続することにより従来のリードフレームに比べて配線距離を減少させ、非常に小型でかつ高熱伝導性を有するパワーモジュールを提供することができる。
【０００６】
さらに本件発明は、一つのヒートスプレッダが複数の半導体チップを支持してもよい。
【０００７】
さらに本件発明のヒートスプレッダ上に配置した突起部は、パワーモジュールとプリント基板を構造的に支持すると同時に実装高さ精度を確保することができる。
【０００８】
さらに、本件発明の突起部は電気伝導性を有しているため、半導体チップが縦型半導体の場合にはパワーモジュール電極部として用いることができる。
【０００９】
さらに、本件発明は、パワーモジュールの熱伝導性絶縁部下面に熱伝導性絶縁部と一体となる形で放熱器を設けることで、より小型なパワーモジュールを提供することができる。
【００１０】
さらに本件発明は、パワーモジュールと、前記パワーモジュールの電極部と電気的に接合するプリント基板と、前記パワーモジュールの熱伝導性絶縁部と接する放熱器とを備え、前記パワーモジュールは、複数の半導体チップと、この複数の半導体チップを支持するヒートスプレッダと、このヒートスプレッダの半導体を実装している面を除く全ての面を保持する熱伝導性絶縁部と、前記複数の半導体チップに設けた電極部とを備え、前記半導体チップに設けた電極部により電気的接合をなすモータ駆動装置としてもよい。
【００１１】
さらに本件発明はパワーモジュールと、前記パワーモジュールの電極部と電気的に接合するプリント基板とを備え、前記パワーモジュールは、複数の半導体チップと、この複数の半導体チップを支持するヒートスプレッダと、このヒートスプレッダの半導体を実装している面を除く全ての面を保持する熱伝導性絶縁部と、前記複数の半導体チップに設けた電極部とを備えた、パワーモジュールの熱伝導性絶縁部下面に熱伝導性絶縁部と一体となる形で放熱器を設け、前記半導体チップに設けた電極部により電気的接合をなすモータ駆
動装置としてもよい。
【００１２】
【実施例】
以下、本発明の実施例について図面を参照にしながら説明する。
【００１３】
（実施例１）
図１はパワーモジュール１５を上面から見た（絶縁封止材料７を除いた図）状態を示している。パワーモジュール１５は半導体チップ１、半導体チップ１の上部に、半導体電極とプリント基板１０を接続するための電極部３、半導体チップ１を下方で支持し、且つ半導体チップ１で発生した熱を拡散するヒートスプレッダ２、構造的な支持と高さ精度を確保するためと同時に電極としても利用する突起部４、半導体チップ１と電極部３を保護するための封止材料６から構成される。なお、電極部３、突起部４の一部は、パワーモジュール１５の上面に露出している。
【００１４】
このパワーモジュール１５は、１個の熱伝導性絶縁部５に対して、複数の半導体チップ１と複数のヒートスプレッダ２があり、それぞれのヒートスプレッダ２のすべてに、半導体チップ１が乗っている。なお、１個のヒートスプレッダ２の上に、複数の半導体チップ１を乗せてもよい。
【００１５】
このパワーモジュール１５をプリント基板１０に取り付けた状態の断面図を図２に示す。パワーモジュール１５は電極部３と突起部４によりプリント基板１０と電気的に接続されており、絶縁封止材料７はプリント基板上の絶縁距離を確保するためにプリント基板１０とパワーモジュール１５の間に充填する。熱伝導性絶縁部５は、放熱材料８を介して放熱器９と接触している。放熱材料８はパワーモジュール１５と放熱器９の間に空気の層ができて熱伝導が悪化するのを防止する。放熱材料８は例えば、放熱グリースや熱伝導性シートなどを用いてもよい。基板支持部１１はプリント基板１０と放熱器９の間隔を規定すると同時にプリント基板１０を放熱器９と固定し、パワーモジュール１５を放熱器９に密着させるために設けられる。
【００１６】
突起部４はパワーモジュール１５とプリント基板１０の接続を構造的に支持するとともに、突起部４の高さを規定することによりパワーモジュール１５の実装高さ精度を確保することができる。
【００１７】
さらに半導体チップ１とヒートスプレッダ２は通常はんだ付けなどの導電性材料でろう付けされているため、半導体チップ１が縦型半導体の場合は半導体裏面の電極をヒートスプレッダ２と突起部４を介して電気的に接続することができる。また電極部３と半導体チップ１は固相拡散接合やろう付けなどの手段により接続されている。半導体チップ１からの電気信号は電極部３と突起部４を経てプリント基板上の回路へと伝わる。一方、半導体チップ１で発生した熱はヒートスプレッダ２から熱伝導性絶縁部５、放熱材料８を経て放熱器９へと伝導される。図４のような従来のパワーモジュール１４を使用した構成に比べて、半導体チップ１から放熱器９までの距離が短くなり、より良い熱伝導性を得ることができる。熱伝導性絶縁部５は絶縁性と熱伝導性の両方を兼ね備えた特性が必要であり、例えばエポキシ系樹脂やセラミックなどを用いてもよい。
【００１８】
本発明によるパワーモジュール１５は半導体チップ１上の電極部３とプリント基板１０を接続しているために、従来のパワーモジュール１４のようなリードフレーム１３による接続よりも接続距離が短い構成となるため、デッドスペースが小さくなり、電気機器をより小型化することができる。
【００１９】
特にモータ制御装置に使用するパワーモジュールは、他のパワーモジュールに比べて発
熱が大きく、小型にすることが非常に困難であったが、このような構成とすることにより小型化が可能になる。なお、このようなパワーモジュールは、モータ制御装置にかぎらず、インバータ装置、電源装置等に用いても同様の効果を得ることができる。
【００２０】
（実施例２）
図３に実施例２の断面図を示す。実施例２では、パワーモジュール自身が放熱器９を備えている構成のため、電気機器の構造にとらわれずにプリント基板１０の表裏どちら側にも実装でき、基板レイアウトの自由度が向上する。また放熱器９の大きさも発熱量によって適当に変えられるので、電気機器をより小型化するのにも有効である。この場合放熱材料８は使わずに、絶縁封止材料７のみで放熱器と一体成型してもよい。
【００２１】
【発明の効果】
本発明によるパワーモジュールは、一方の面では電気的に最短距離で接続され、反対の面では熱的に最短距離で接続できるため、従来のパワーモジュールと比べて電気機器の小型化に有効である。また電気的接合距離を短くすることで電気抵抗を低減させ、電気機器の効率改善に有効である。さらにパワーモジュール自体に放熱器を備える構造をとることにより、基板レイアウトの自由度が向上し、電気機器のさらなる小型化が可能となる。
【図面の簡単な説明】
【図１】 実施例１のパワーモジュールを上から見た図
【図２】 同モータ制御装置の断面図
【図３】 実施例２のモータ制御装置の断面図
【図４】 従来のモータ制御装置を示す図
【符号の説明】
１ 半導体チップ
２ ヒートスプレッダ
３ 電極部
４ 突起部
５ 熱伝導性絶縁部
６ 封止材料
７ 絶縁封止材料
８ 放熱材料
９ 放熱器
１０ プリント基板
１１ 基板支持部
１２ アルミワイヤ
１３ リードフレーム
１４ 従来のパワーモジュール
１５ 本発明に係るパワーモジュール[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a semiconductor device used for electrical equipment such as an IGBT and a MOSFET.
[0002]
[Prior art]
In recent years, power converters such as inverter devices are required to be further reduced in size and efficiency. For example, as one means for reducing the size of an inverter device, a power module in which a plurality of power devices are integrated is used. By using such a power module, the inverter circuit can be reduced in size compared to the case where the power devices are separately mounted. FIG. 4 is one example of a conventional power module mounting example. The power module 14 in FIG. 4 includes a semiconductor chip 1, a heat spreader 2, an aluminum wire 12, a heat conductive insulating part 5, and a lead frame 13. The lead frame 13 constitutes an electrical connection with the printed circuit board 10, and heat is radiated to the radiator 9 through the heat conductive insulating portion 5 and the heat radiating material 8. The heat dissipating material 8 is often used to prevent an air layer from being formed between the power module 14 and the heat dissipator 9 to deteriorate heat conduction.
[0003]
[Problems to be solved by the invention]
In the mounting example of FIG. 4, since the lead frame is electrically connected to the printed circuit board, the dead space between the printed circuit board and the heat sink is large, which is an obstacle to further miniaturization. It is an object of the present invention to provide a small and highly heat conductive power module for solving the above-mentioned problems.
[0004]
[Means for Solving the Problems]
A power module according to the present invention includes a plurality of semiconductor chips, a heat spreader that supports the semiconductor chip, a thermally conductive insulating portion that supports the heat spreader, and an electrode portion provided on the semiconductor chip, and the heat conduction The conductive insulating portion side is used as a heat dissipation surface, and electrical bonding is performed by an electrode portion provided on the semiconductor chip. With such a configuration, an electrode part for electrically joining a semiconductor electrode to one surface and a heat conductive insulating part for insulating and conducting heat generated in the semiconductor on the opposite surface By connecting the electrode part to the printed circuit board, the connection distance can be reduced as compared with the conventional lead frame, and a power module having a very small size and high thermal conductivity can be provided.
[0005]
DETAILED DESCRIPTION OF THE INVENTION
A power module according to the present invention includes a plurality of semiconductor chips, a heat spreader that supports the semiconductor chips, a heat conductive insulating portion that holds all surfaces except the surface on which the semiconductor of the heat spreader is mounted, and the semiconductor And an electrode portion provided on the chip, the heat conductive insulating portion serving as a heat dissipation surface, and electrical connection is performed by the electrode portion provided on the semiconductor chip. An electrode portion for electrically joining a semiconductor electrode is provided on one surface, and a heat conductive insulating portion that insulates and conducts heat generated in the semiconductor on the opposite surface, and the electrode portion is a printed circuit board. As a result, it is possible to provide a power module having a very small size and high thermal conductivity by reducing the wiring distance compared to the conventional lead frame.
[0006]
Further, in the present invention, one heat spreader may support a plurality of semiconductor chips.
[0007]
Furthermore, the protrusions arranged on the heat spreader of the present invention can structurally support the power module and the printed circuit board, and at the same time ensure mounting height accuracy.
[0008]
Furthermore, since the protrusion part of this invention has electrical conductivity, when a semiconductor chip is a vertical semiconductor, it can be used as a power module electrode part.
[0009]
Furthermore, this invention can provide a more compact power module by providing a heat sink in the form integrated with the heat conductive insulating portion on the lower surface of the heat conductive insulating portion of the power module.
[0010]
The present invention further includes a power module, a printed circuit board that is electrically joined to an electrode portion of the power module, and a radiator that is in contact with a heat conductive insulating portion of the power module, wherein the power module includes a plurality of semiconductors. A chip, a heat spreader that supports the plurality of semiconductor chips, a thermally conductive insulating portion that holds all surfaces except the surface on which the semiconductor of the heat spreader is mounted, and an electrode portion provided on the plurality of semiconductor chips; It is good also as a motor drive device which makes electrical joining with the electrode part provided in the said semiconductor chip.
[0011]
The present invention further includes a power module and a printed circuit board that is electrically joined to the electrode portion of the power module. The power module includes a plurality of semiconductor chips, a heat spreader that supports the plurality of semiconductor chips, and the heat spreader. a thermally conductive insulating portion for holding all surfaces except the surface that implement the semiconductor, said a plurality of semiconductor chips provided with the electrode portions, the heat conducted to the heat-conductive insulating portion lower surface of the power module It is good also as a motor drive device which provides a heat sink in the form integrated with a conductive insulating part, and makes electrical connection with the electrode part provided in the semiconductor chip.
[0012]
【Example】
Embodiments of the present invention will be described below with reference to the drawings.
[0013]
Example 1
FIG. 1 shows a state in which the power module 15 is viewed from above (a diagram excluding the insulating sealing material 7). The power module 15 supports the semiconductor chip 1, the electrode portion 3 for connecting the semiconductor electrode and the printed circuit board 10, and the semiconductor chip 1 below the semiconductor chip 1 and diffuses the heat generated in the semiconductor chip 1. The heat spreader 2 is composed of a protrusion 4 used as an electrode for ensuring structural support and height accuracy, and a sealing material 6 for protecting the semiconductor chip 1 and the electrode 3. Part of the electrode part 3 and the protrusion part 4 is exposed on the upper surface of the power module 15.
[0014]
The power module 15 includes a plurality of semiconductor chips 1 and a plurality of heat spreaders 2 with respect to one heat conductive insulating portion 5, and the semiconductor chip 1 is mounted on all of the heat spreaders 2. A plurality of semiconductor chips 1 may be placed on one heat spreader 2.
[0015]
A cross-sectional view of the power module 15 attached to the printed circuit board 10 is shown in FIG. The power module 15 is electrically connected to the printed circuit board 10 by the electrode portion 3 and the protrusion 4, and the insulating sealing material 7 is provided between the printed circuit board 10 and the power module 15 in order to secure an insulation distance on the printed circuit board. To fill. The thermally conductive insulating portion 5 is in contact with the radiator 9 through the heat dissipation material 8. The heat dissipating material 8 prevents an air layer from being formed between the power module 15 and the heat dissipator 9 to deteriorate heat conduction. For example, a heat dissipating grease or a heat conductive sheet may be used as the heat dissipating material 8. The board support part 11 is provided to regulate the distance between the printed board 10 and the radiator 9 and to fix the printed board 10 to the radiator 9 and to bring the power module 15 into close contact with the radiator 9.
[0016]
The protrusion 4 structurally supports the connection between the power module 15 and the printed board 10, and the mounting height accuracy of the power module 15 can be ensured by defining the height of the protrusion 4.
[0017]
Further, since the semiconductor chip 1 and the heat spreader 2 are usually brazed with a conductive material such as soldering, when the semiconductor chip 1 is a vertical semiconductor, the electrodes on the back surface of the semiconductor are electrically connected via the heat spreader 2 and the protrusions 4. Can be connected to. The electrode unit 3 and the semiconductor chip 1 are connected by means such as solid phase diffusion bonding or brazing. An electrical signal from the semiconductor chip 1 is transmitted to the circuit on the printed circuit board through the electrode part 3 and the protrusion part 4. On the other hand, heat generated in the semiconductor chip 1 is conducted from the heat spreader 2 to the heat radiator 9 through the heat conductive insulating portion 5 and the heat radiation material 8. Compared with the configuration using the conventional power module 14 as shown in FIG. 4, the distance from the semiconductor chip 1 to the radiator 9 is shortened, and better thermal conductivity can be obtained. The heat conductive insulating part 5 needs to have both insulating properties and heat conductive properties. For example, an epoxy resin or ceramic may be used.
[0018]
Since the power module 15 according to the present invention connects the electrode portion 3 on the semiconductor chip 1 and the printed circuit board 10, the connection distance is shorter than the connection by the lead frame 13 like the conventional power module 14. Thus, the dead space is reduced and the electric device can be further downsized.
[0019]
In particular, the power module used in the motor control device generates more heat than other power modules, and it has been very difficult to reduce the size. However, such a configuration makes it possible to reduce the size. Note that such a power module is not limited to a motor control device, and the same effect can be obtained even when used in an inverter device, a power supply device, or the like.
[0020]
(Example 2)
FIG. 3 shows a cross-sectional view of the second embodiment. In the second embodiment, since the power module itself includes the radiator 9, the power module itself can be mounted on either the front or back side of the printed circuit board 10 without being restricted by the structure of the electric device, and the degree of freedom of the board layout is improved. In addition, since the size of the radiator 9 can be appropriately changed according to the amount of heat generated, it is effective for further downsizing the electric equipment. In this case, the heat radiating material 8 may not be used, and the heat radiating material 8 may be integrally formed with the heat radiating member using only the insulating sealing material 7.
[0021]
【The invention's effect】
The power module according to the present invention is electrically connected at the shortest distance on one side and can be connected at the shortest distance on the opposite side, so that it is more effective for miniaturization of electric devices than conventional power modules. . In addition, shortening the electrical junction distance reduces the electrical resistance, which is effective in improving the efficiency of electrical equipment. Further, by adopting a structure in which the power module itself is provided with a heat radiator, the degree of freedom of the board layout is improved, and the electric device can be further reduced in size.
[Brief description of the drawings]
1 is a top view of a power module according to a first embodiment. FIG. 2 is a cross-sectional view of the motor control device. FIG. 3 is a cross-sectional view of a motor control device according to a second embodiment. Figure showing symbols [Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 Semiconductor chip 2 Heat spreader 3 Electrode part 4 Protrusion part 5 Thermally conductive insulating part 6 Sealing material 7 Insulating sealing material 8 Heat radiation material 9 Heat radiator 10 Printed circuit board 11 Board | substrate support part 12 Aluminum wire 13 Lead frame 14 Conventional power module 15 Power module according to the present invention

Claims (2)

表面に基板と電気的接合をなす電極部を備えた複数の半導体チップと、これらの半導体チップの下面を支持する複数のヒートスプレッダと、前記複数のヒートスプレッダの半導体を実装している面を除く全ての面を保持する熱伝導性絶縁部と、前記熱伝導性絶縁部の下面に前記熱伝導性絶縁部と一体となる形で放熱器を備えたパワーモジュールにおいて、前記ヒートスプレッダ上には、パワーモジュールの電極となる電気的電気伝導性を有する突起部を備え、前記突起部によりパワーモジュールを構造的に支持すると同時に、実装高さ精度を確保することを特徴としたパワーモジュール。A plurality of semiconductor chips each having an electrode portion that is electrically connected to the substrate on the surface, a plurality of heat spreaders that support the lower surfaces of these semiconductor chips, and all of the plurality of heat spreaders except the surface on which the semiconductor is mounted. In a power module having a heat conductive insulating part that holds a surface, and a heat radiator integrated with the heat conductive insulating part on a lower surface of the heat conductive insulating part, on the heat spreader, A power module comprising a projecting portion having electrical and electrical conductivity to be an electrode, and structurally supporting the power module by the projecting portion, and at the same time ensuring mounting height accuracy . 請求項１記載のパワーモジュールを用いたモータ制御装置。  A motor control device using the power module according to claim 1.
JP2001324739A 2001-10-23 2001-10-23 Power module Expired - Fee Related JP3855726B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001324739A JP3855726B2 (en) 2001-10-23 2001-10-23 Power module

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001324739A JP3855726B2 (en) 2001-10-23 2001-10-23 Power module

Publications (2)

Publication Number Publication Date
JP2003133514A JP2003133514A (en) 2003-05-09
JP3855726B2 true JP3855726B2 (en) 2006-12-13

Family

ID=19141419

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001324739A Expired - Fee Related JP3855726B2 (en) 2001-10-23 2001-10-23 Power module

Country Status (1)

Country Link
JP (1) JP3855726B2 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4089636B2 (en) 2004-02-19 2008-05-28 三菱電機株式会社 Method for manufacturing thermally conductive resin sheet and method for manufacturing power module
JP5274007B2 (en) * 2007-12-27 2013-08-28 三菱電機株式会社 Thermally conductive resin sheet and power module using the same
WO2010147201A1 (en) * 2009-06-19 2010-12-23 株式会社安川電機 Power conversion device
JP5158102B2 (en) * 2010-01-05 2013-03-06 富士電機株式会社 Semiconductor device
JP6237006B2 (en) * 2013-08-30 2017-11-29 富士通株式会社 Heat sink and board unit
JP6711098B2 (en) * 2016-04-15 2020-06-17 オムロン株式会社 Heat dissipation structure of semiconductor device

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001203313A (en) * 1999-11-09 2001-07-27 Matsushita Electric Ind Co Ltd Thermal conduction substrate and manufacturing method therefor
JP3971568B2 (en) * 1999-11-29 2007-09-05 松下電器産業株式会社 Semiconductor package and semiconductor package manufacturing method

Also Published As

Publication number Publication date
JP2003133514A (en) 2003-05-09

Similar Documents

Publication Publication Date Title
US7274105B2 (en) Thermal conductive electronics substrate and assembly
JP4192396B2 (en) Semiconductor switching module and semiconductor device using the same
US20070236883A1 (en) Electronics assembly having heat sink substrate disposed in cooling vessel
JPH09139461A (en) Semiconductor power module
JP2020072106A (en) Semiconductor device
WO2005119896A1 (en) Inverter device
JPH11204700A (en) Power module integrating heat radiating fin
JP2007068302A (en) Power semiconductor device and semiconductor power converter
US11195775B2 (en) Semiconductor module, semiconductor device, and manufacturing method of semiconductor module
JP2004006603A (en) Semiconductor power device
US10062632B2 (en) Semiconductor device having improved heat dissipation efficiency
JP2001284524A (en) Power semiconductor module
JP3855726B2 (en) Power module
JP3922809B2 (en) Semiconductor device
JP2002164485A (en) Semiconductor module
JP4375299B2 (en) Power semiconductor device
TWI660471B (en) Chip package
JP2002050722A (en) Semiconductor package and application device thereof
WO2013105456A1 (en) Circuit board and electronic device
JPH10247702A (en) Ball grid array package and printed board
JP4120581B2 (en) Power module
JPH11220074A (en) Semiconductor device
JP2004048084A (en) Semiconductor power module
JP2004096135A5 (en)
CN110676232A (en) Semiconductor device packaging structure, manufacturing method thereof and electronic equipment

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20040615

RD01 Notification of change of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7421

Effective date: 20050701

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20060131

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20060214

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20060412

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20060620

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20060802

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20060822

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20060904

R151 Written notification of patent or utility model registration

Ref document number: 3855726

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R151

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20090922

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100922

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110922

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120922

Year of fee payment: 6

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130922

Year of fee payment: 7

LAPS Cancellation because of no payment of annual fees