JP3813313B2 - プラズマ表面処理装置 - Google Patents
プラズマ表面処理装置 Download PDFInfo
- Publication number
- JP3813313B2 JP3813313B2 JP20089397A JP20089397A JP3813313B2 JP 3813313 B2 JP3813313 B2 JP 3813313B2 JP 20089397 A JP20089397 A JP 20089397A JP 20089397 A JP20089397 A JP 20089397A JP 3813313 B2 JP3813313 B2 JP 3813313B2
- Authority
- JP
- Japan
- Prior art keywords
- tray
- surface treatment
- plasma
- bus bar
- treatment apparatus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004381 surface treatment Methods 0.000 title claims description 13
- 238000003780 insertion Methods 0.000 claims description 12
- 230000037431 insertion Effects 0.000 claims description 12
- 238000004140 cleaning Methods 0.000 description 13
- 239000004065 semiconductor Substances 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 239000007789 gas Substances 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 229910001220 stainless steel Inorganic materials 0.000 description 4
- 239000010935 stainless steel Substances 0.000 description 4
- 239000004020 conductor Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005755 formation reaction Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- KYKAJFCTULSVSH-UHFFFAOYSA-N chloro(fluoro)methane Chemical compound F[C]Cl KYKAJFCTULSVSH-UHFFFAOYSA-N 0.000 description 1
- 238000005108 dry cleaning Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005459 micromachining Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
Images
Landscapes
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Plasma Technology (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20089397A JP3813313B2 (ja) | 1997-07-09 | 1997-07-09 | プラズマ表面処理装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20089397A JP3813313B2 (ja) | 1997-07-09 | 1997-07-09 | プラズマ表面処理装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPH1131600A JPH1131600A (ja) | 1999-02-02 |
| JPH1131600A5 JPH1131600A5 (enrdf_load_stackoverflow) | 2005-01-20 |
| JP3813313B2 true JP3813313B2 (ja) | 2006-08-23 |
Family
ID=16432014
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20089397A Expired - Lifetime JP3813313B2 (ja) | 1997-07-09 | 1997-07-09 | プラズマ表面処理装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3813313B2 (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100462772B1 (ko) * | 2002-12-02 | 2004-12-23 | 에이치아이티 주식회사 | 플라즈마를 이용한 세정장치 |
| FR2938120B1 (fr) * | 2008-10-31 | 2011-04-08 | Commissariat Energie Atomique | Procede de formation d'une couche monocristalline dans le domaine micro-electronique |
-
1997
- 1997-07-09 JP JP20089397A patent/JP3813313B2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH1131600A (ja) | 1999-02-02 |
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