JP3808421B2 - Semiconductor element storage package and semiconductor device using the same - Google Patents

Semiconductor element storage package and semiconductor device using the same Download PDF

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JP3808421B2
JP3808421B2 JP2002321748A JP2002321748A JP3808421B2 JP 3808421 B2 JP3808421 B2 JP 3808421B2 JP 2002321748 A JP2002321748 A JP 2002321748A JP 2002321748 A JP2002321748 A JP 2002321748A JP 3808421 B2 JP3808421 B2 JP 3808421B2
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wire
wiring conductor
semiconductor element
connector
substrate
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JP2004158574A (en
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哲生 平川
伸 松田
義信 澤
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Kyocera Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors

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  • Wire Bonding (AREA)

Description

【０００１】
【発明の属する技術分野】
本発明は高周波の電気信号を送受信する半導体素子を収納する半導体素子収納用パッケージ、およびその半導体素子収納用パッケージを用いて成る半導体装置に関するものである。
【０００２】
【従来の技術】
従来、電気信号を送受信する半導体素子を収容するための半導体素子収納用パッケージは、一般に、酸化アルミニウム質焼結体、ムライト質焼結体、窒化アルミニウム質焼結体等の電気絶縁材料から成り、上面に半導体素子の搭載部が形成された基体と、タングステン、モリブデン、マンガン、銅、銀等の金属材料から成り、基体の半導体素子搭載部から下面にかけて被着導出された複数の入出力用配線導体（第１配線導体）およびグランド用配線導体と、この配線導体と電気的に接続するようにして基体の下面に形成された複数個のグランド用パッドおよび入出力用パッドと、基体の搭載部より上面もしくは側面にかけて導出されている出入力用配線導体（第２配線導体）と、導電性の線材と絶縁性の外囲体とから成り、線材の一端が出入力用配線導体（第２配線導体）に接続され、他端が外部に導出されているコネクターとにより構成されている。
【０００３】
かかる半導体素子収納用パッケージは、その搭載部に電気信号を送受信する半導体素子がＡｕ−Ｓｎろう材あるいは半田等の接合材を介して接着固定されるとともに、半導体素子の電極が入出力配線導体（第１配線導体）、グランド用配線導体および出入力配線導体（第２配線導体）にボンディングワイヤや接続用リボン、半田等の導電性接続材を介して接続され、その後、必要に応じて蓋体等で半導体素子を封止することによって半導体装置となる。
【０００４】
また前記半導体装置は基体の下面に形成されているグランド用パッドおよび入出力用パッドを外部電気回路基板の回路導体に半田バンプ等を介し接続させることによって内部に収容する半導体素子が外部電気回路に接続され、同時にコネクターに同軸ケーブル等を介し外部の通信装置等の外部機器を接続させることによって半導体素子と外部機器とが接続するようになっている。
【０００５】
なお、前記半導体装置に使用されている半導体素子は複数の電気信号を合成して一つの電気信号に変換する、或いは一つの電気信号を分離して複数の電気信号に変換する機能を有しており、第１配線導体を介して入力される複数の周波数帯域が低い電気信号は半導体素子で合成されて一つの周波数帯域が高い電気信号となり、この周波数帯域の高い電気信号は第２配線導体を介してコネクターに伝送されるとともにコネクターより外部の通信装置等の外部機器に伝送され、またコネクターを介して外部機器より伝送された周波数帯域の高い電気信号は半導体素子で複数の周波数帯域が低い電気信号に変換され、各々の周波数帯域の低い電気信号は第１配線導体を介して外部電気回路に伝送されることとなる。
【０００６】
また、前記コネクターは、通常、銅等の金属の線材の周囲をセラミックス等の絶縁性材料から成る外囲体で取り囲んだ構造を有しており、コネクターの線材と第２配線導体とはコネクターの線材が熱により膨張した際、第２配線導体より外れてしまうのを防止するため約２ｍｍ（２０００μｍ）以上の長さに接続し、接続面積を大としていた。
【０００７】
【特許文献１】
特開２００２−１６４４６６号公報
【０００８】
【発明が解決しようとする課題】
しかしながら、この従来の半導体素子収納用パッケージおよび半導体装置においては、第２配線導体にコネクターの線材を２ｍｍ以上の長さにわたって接続しており、両者の接続部におけるインピーダンスは第２配線導体とコネクターの線材との合計となって他よりも低い低インピーダンスになるとともにその低インピーダンスの領域が２ｍｍ以上のものとなっている。そのため、この第２配線導体とコネクターの線材との間に４０ＧＨｚ〜８０ＧHzの高周波の電気信号を伝送させた場合、高周波の電気信号は前記インピーダンスが低い領域（第２配線導体とコネクターの線材とが２ｍｍ以上にわたって接続されている領域）で反射等を起こし、伝送特性が大きく劣化するという欠点を有していた。
【０００９】
また、この従来の半導体素子収納用パッケージおよび半導体装置においては基体が酸化アルミニウム質焼結体やムライト質焼結体等で形成されており、その線膨張係数が７．５×１０-6／℃であるのに対し、コネクターの線材は線膨張係数が約１６×１０-6／℃程度の銅等から成り、基体の線膨張係数とコネクターの線材の線膨張係数とが大きく相違することから基体に設けた第２配線導体にコネクターの線材を接続させた後、基体と線材に熱が作用すると線材が基体よりも大きく熱膨張し、その結果、線材が基体に設けた第２配線導体より外れて半導体素子収納用パッケージ或いは半導体装置としての信頼性が大きく低下するという欠点を有していた。
【００１０】
本発明は上記欠点に鑑み案出されたもので、その目的は、基体に設けた第２配線導体にコネクターの線材を強固に接続させ、かつ、第２配線導体とコネクターの線材との接続部での高周波電気信号の反射等を有効に防止し、伝送特性の優れた半導体素子収納用パッケージおよび半導体装置を提供することにある。
【００１１】
【課題を解決するための手段】
本発明の半導体素子収納用パッケージは、４０ＧＨｚ〜８０ＧＨｚの電気信号を送信または受信する半導体素子を搭載するための搭載部を有する基体と、該基体の前記搭載部から導出されている配線導体と、導電性の線材を含み、該線材が前記配線導体に電気的に接続されているコネクターとを備えている。
【００１２】
そして、本発明の半導体素子収納用パッケージは、前記基体が、クォーツ、クリストバライト、トリジマイト、エンスタタイトおよびフォルステライトからなる群より選択される結晶相を含有するガラスセラミック焼結体により構成されており、前記線材は、ベリリウム−銅により構成されており、前記コネクターの前記線材と前記配線導体との接続長さが８００μｍ以下である。
【００１３】
本発明の半導体装置は、上記構成の半導体素子収納用パッケージと、前記搭載部に搭載される半導体素子とを備えることを特徴とするものである。
【００１４】
本発明の半導体素子収納用パッケージおよび半導体装置では、基体とコネクターの線材との線膨張係数差を小さく（例えば８．０×１０−６／℃以下に）することができるため、基体に設けた配線導体にコネクターの線材を接続させた後、基体と線材に熱が作用したとしても線材が基体より大きく熱膨張して外れることはなく配線導体にコネクターの線材を常に接続させておくことが可能となる。そのため、本半導体素子収納用パッケージおよび半導体装置では、配線導体と線材との接続長さを２ｍｍより短く（例えば８００μｍ以下に）しても、コネクターの線材の熱膨張などに起因して配線導体から該線材が外れるのを防ぐことができる。したがって、本半導体素子収納用パッケージおよび半導体装置では、配線導体とコネクターの線材との接続を強固に保つとともに、配線導体とコネクターの線材との接続領域における反射などを有効に防止して伝送特性の優れたものとすることができる。
【００１５】
【発明の実施の形態】
次に、本発明を添付図面に基づき詳細に説明する。
図１は本発明の半導体素子収納用パッケージの一実施例を示し、１は基体、２ａは第１配線導体、２ｂはグランド配線導体、３ａは入出力用パッド、３ｂはグランド用パッド、４は第２配線導体、５はコネクターである。これら基体１、第１配線導体２ａ、グランド配線導体２ｂ、入出力用パッド３ａ、グランド用パッド３ｂ、第２配線導体４およびコネクター５により半導体素子６を収納するための半導体素子収納用パッケージ７が基本的に構成される。
【００１６】
前記基体１は酸化アルミニウム質焼結体、ムライト質焼結体、ガラスセラミックス、窒化アルミニウム質焼結体等の電気絶縁材料から成り、例えば、酸化アルミニウム質焼結体から成る場合、酸化アルミニウム、酸化ケイ素、酸化マグネシウム、酸化カルシウム等の原料粉末に適当な有機溶剤、溶媒、可塑剤、分散剤を添加混合して泥漿物を作り、この泥漿物を従来周知のドクターブレード法やカレンダーロール法等のシート形成法を採用しシート状に形成してセラミックグリーンシート（セラミック生シート）を得、しかる後、それらセラミックグリーンシートに適当な打ち抜き加工を施すとともにこれを必要に応じて複数枚積層し、約１６００℃の高温で焼成することによって製作される。
【００１７】
また前記基体１は、半導体素子の搭載部１ａから下面にかけて複数個の第１配線導体２ａおよびグランド用配線導体２ｂが形成されており、該各配線導体２ａ、２ｂは半導体素子の電気信号入出力用、接地用の各電極を、入出力用パッド３ａやグランド用パッド３ｂに接続するための導電路として作用し、搭載部１ａ側の一端には半導体素子６の電気信号入出力用、接地用の各電極が導電性接続材を介して電気的に接続される。
【００１８】
前記第１配線導体２ａおよびグランド用配線導体２ｂ、入出力用パッド３ａおよびグランド用パッド３ｂは、銅、銀、金、パラジウム、タングステン、モリブデン、マンガン等の金属材料から成り、例えば銅から成る場合であれば、銅粉末に有機溶剤等を添加して成る金属ペーストを基体１となるセラミックグリーンシートの表面に所定パターンに印刷しておくことにより形成される。
【００１９】
この第１配線導体２ａおよびグランド用配線導体２ｂの基体１下面側の一端は、それぞれ対応する入出力用パッド３ａおよびグランド用パッド３ｂと電気的に接続しており、これらの入出力用パッド３ａ、グランド用パッド３ｂを外部電気回路の所定の信号用や接地用等の回路導体に接続することにより、半導体素子６の電気信号入出力用、接地用の各電極が外部電気回路と電気的に接続される。
【００２０】
また前記基体１は、半導体素子の搭載部１ａから上面や側面等にかけて第２配線導体４が形成されており、該第２配線導体４は半導体素子６の電極をコネクター５の線材５ａに接続するための導電路として作用し、搭載部１ａ側の一端には半導体素子６の電極が導電性接続材８を介して電気的に接続される。
【００２１】
前記第２配線導体４は、上述の第１配線導体２ａ等と同様に、銅、銀、金、パラジウム、タングステン、モリブデン、マンガン等の金属材料から成り、例えば銅から成る場合であれば、銅粉末に有機溶剤等を添加して成る金属ペーストを基体１となるセラミックグリーンシートの表面に所定パターンに印刷しておくことにより形成される。
【００２２】
この第２配線導体４の基体１外表面側の一端はコネクター５の線材５ａと電気的に接続しており、このコネクター５を同軸ケーブル等を介して通信装置等の外部機器に接続することにより半導体素子６と外部機器との間で高周波信号の送受信が行われる。
【００２３】
前記コネクター５は、半導体素子収納用パッケージ７の第２配線導体４を同軸ケーブル等を介して外部機器に接続するための接続体として作用し、例えば、銅やＦｅ−Ｎｉ−Ｃｏ合金、Ｆｅ−Ｎｉ合金等の金属の線材の周囲を、ホウ珪酸系ガラス等の絶縁性の外囲体５ｂで取り囲んだ構造である。
【００２４】
前記線材５ａと外囲体５ｂとから成るコネクター５は、例えば、銅から成る線材５ａを、銅等の金属から成る円筒状の容器の中央にセットし、容器内にホウ珪酸ガラス等のガラス粉末を充填した後、ガラス粉末を加熱溶融させて線材５ａの周囲に被着させることによって製作される。
【００２５】
かくして上述の半導体素子収納用パッケージによれば、基体１の搭載部１ａに半導体素子６を搭載するとともにガラス、樹脂、ロウ材等の接着材を介して固定し、しかる後、半導体素子６の各電極を第１配線導体２ａおよびグランド用配線導体２ｂに、例えば、ボンディングワイヤ８を介して接続し、最後に蓋体１０を基体１の上面に封止材を介して接合させ、半導体素子６を気密に封入することによって半導体装置１１となる。
【００２６】
この半導体装置１１は基体１下面の入出力用パッド３ａおよびグランド用パッド３ｂが外部電気回路基板の所定の信号用や接地用等の回路導体に半田バンプ等の外部端子を介して接続され、これによって半導体素子６の信号用、接地用の各電極は外部電気回路と電気的に接続される。
【００２７】
また、この半導体装置１１に取着されているコネクター５の線材５ａに同軸ケーブル等の外部接続用の導線を接続することにより、半導体素子６の電極が通信装置等の外部機器に接続される。
【００２８】
そしてかかる半導体装置１１は、外部電気回路から供給される複数の周波数帯域が低い（５〜１０ＧＨｚ）電気信号を第１配線導体２ａを介して半導体素子６に入力させ、半導体素子６でこれら入力された電気信号を合成して一つの周波数帯域が高い（４０〜８０ＧＨｚ）電気信号とするとともにこれを第２配線導体４を介してコネクター５に出力し、該コネクター５の線材５ａを介して外部の通信装置等の外部機器に伝送する、或いは、外部の通信装置等の外部機器から伝送された一つの周波数帯域が高い（４０〜８０ＧＨｚ）電気信号をコネクター５の線材５ａ及び第２配線導体４を介して半導体素子６に入力し、半導体素子６で入力された周波数帯域が高い（４０〜８０ＧＨｚ）電気信号を複数の周波数帯域が低い（５〜１０ＧＨｚ）電気信号に変換するとともにこれらの個々の周波数帯域が低い電気信号を第１配線導体２ａを介して外部電気回路に供給することとなる。
【００２９】
本発明の半導体素子収納用パッケージおよびこれを用いた半導体装置においては、第２配線導体４とコネクター５の線材５ａとの接続長さを８００μｍ以下とすることが重要である。
【００３０】
第２配線導体４とコネクター５の線材５ａとの接続長さを８００μｍ以下とすると第２配線導体４とコネクター５の線材５ａとの接続部における低インピーダンス領域の長さが極めて短いものとなり、その結果、第２配線導体４とコネクター５の線材５ａに４０ＧＨｚ〜８０ＧＨｚの高周波の電気信号を伝送させたとしても低インピーダンス領域が短いことから大きな反射を起こすことはなく伝送特性を極めて優れたものとなすことが可能となる。
【００３１】
前記第２配線導体４とコネクター５の線材５ａとの接続部の長さが８００μｍを超えると第２配線導体４とコネクター５の線材５ａとの接続部における低インピーダンス領域が長いものとなり、第２配線導体４とコネクター５の線材５ａとの間に４０ＧＨｚ〜８０ＧＨｚの高周波の電気信号を伝送させた際、接続部で反射等を起こし、伝送特性が大きく劣化してしまう。従って、前記第２配線導体４とコネクター５の線材５ａとの接続部の長さは８００μｍ以下に特定される。
【００３２】
また本発明の半導体素子収納用パッケージおよび半導体装置においては、基体１とコネクター５の線材５ａとの線膨張係数差を８．０×１０-6／℃以下としておくことが重要である。
【００３３】
前記基体１とコネクター５の線材５ａとの線膨張係数差を８．０×１０-6／℃以下とすると基体１に設けた第２配線導体４にコネクター５の線材５ａを接続させた後、基体１と線材５ａに熱が作用したとしても線材５ａが基体１より大きく熱膨張して外れることはなく、これによって第２配線導体４にコネクター５の線材５ａを常に接続させておくことが可能となる。
【００３４】
前記基体１とコネクター５の線材５ａとの線膨張係数差は８．０×１０-6／℃を超えると基体１に設けた第２配線導体４にコネクター５の線材５ａを接続した後、基体１と線材５ａに熱が作用した時、線材５ａが基体１より大きく熱膨張して線材５ａが第２配線導体４より外れてしまう。従って、前記基体１とコネクター５の線材５ａとの線膨張係数差は８．０×１０-6／℃以下に特定される。
【００３５】
前記基体１とコネクター５の線材５ａとの線膨張係数差を８．０×１０-6／℃以下とする際の基体１及び線材５ａの具体的材料としては、基体１が酸化アルミニウム質焼結体（線膨張係数：７．５×１０-6／℃）から成る場合、線材５ａは鉄―ニッケル−コバルト合金、基体１が高熱膨張のクォーツ、クリストバライト、トリジマイト、エンスタタイト、フォルステライト等の結晶相を含有するガラスセラミック焼結体（線膨張係数：約１６．０×１０-6／℃）から成る場合、線材５ａはベリリウム−銅が好適に使用される。
【００３６】
なお、本発明は上述の実施例に限定されるものではなく、本発明の要旨を逸脱しない範囲であれば種々の変更は可能である。
【００３７】
【発明の効果】
本発明の半導体素子収納用パッケージおよび半導体装置によれば、第２配線導体とコネクターの線材との接続長さを８００μｍ以下と短くしたことから、第２配線導体とコネクターの線材との接続部における低インピーダンス領域の長さが極めて短いものとなり、その結果、第２配線導体とコネクターの線材に４０ＧＨｚ〜８０ＧＨｚの高周波の電気信号を伝送させたとしても低インピーダンス領域が短いことから大きな反射を起こすことはなく、伝送特性を優れたものとなすことができる。
【００３８】
また本発明の半導体素子収納用パッケージおよび半導体装置によれば、基体とコネクターの線材との線膨張係数差を８．０×１０-6／℃以下としたことから基体に設けた第２配線導体にコネクターの線材を接続させた後、基体と線材に熱が作用したとしても線材が基体より大きく熱膨張して外れることはなく第２配線導体にコネクターの線材を常に接続させておくことが可能となる。
【図面の簡単な説明】
【図１】本発明の半導体素子収納用パッケージおよびこの半導体素子収納用パッケージを用いた半導体装置の一実施例を示す断面図である。
【符号の説明】
１・・・・・基体
１ａ・・・・搭載部
２ａ・・・・第１配線導体
２ｂ・・・・グランド配線導体
３ａ・・・・入出力用パッド
３ｂ・・・・グランド用パッド
４・・・・・第２配線導体
５・・・・・コネクター
５ａ・・・・線材
５ｂ・・・・外囲体
６・・・・・半導体素子
７・・・・・半導体素子収納用パッケージ
８・・・・・ボンディングワイヤ
１０・・・・蓋体
１１・・・・半導体装置[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a semiconductor element storage package for storing a semiconductor element that transmits and receives a high-frequency electrical signal, and a semiconductor device using the semiconductor element storage package.
[0002]
[Prior art]
Conventionally, a package for housing a semiconductor element for housing a semiconductor element that transmits and receives an electrical signal is generally made of an electrically insulating material such as an aluminum oxide sintered body, a mullite sintered body, an aluminum nitride sintered body, A substrate having a semiconductor element mounting portion formed on the upper surface, and a plurality of input / output wirings made of a metal material such as tungsten, molybdenum, manganese, copper, silver, etc. A conductor (first wiring conductor) and a ground wiring conductor, a plurality of ground pads and input / output pads formed on the lower surface of the base so as to be electrically connected to the wiring conductor, and a base mounting portion It consists of an input / output wiring conductor (second wiring conductor) led out to the upper surface or side surface, a conductive wire and an insulating enclosure, and one end of the wire is in and out Is connected to use wire conductors (second wiring conductor), the other end is constituted by a connector that is led to the outside.
[0003]
In such a package for housing a semiconductor element, a semiconductor element that transmits and receives an electrical signal is bonded and fixed to the mounting portion via a bonding material such as an Au—Sn brazing material or solder, and the electrode of the semiconductor element is connected to an input / output wiring conductor ( The first wiring conductor), the ground wiring conductor and the input / output wiring conductor (second wiring conductor) are connected to each other through a conductive connecting material such as a bonding wire, a connecting ribbon, or solder, and then a lid as required. A semiconductor device is obtained by sealing the semiconductor element with, for example.
[0004]
In the semiconductor device, a ground pad and an input / output pad formed on the lower surface of the base are connected to a circuit conductor of an external electric circuit board through a solder bump or the like, so that a semiconductor element accommodated in the semiconductor device is an external electric circuit. At the same time, an external device such as an external communication device is connected to the connector via a coaxial cable or the like, so that the semiconductor element and the external device are connected.
[0005]
The semiconductor element used in the semiconductor device has a function of synthesizing and converting a plurality of electric signals into one electric signal, or separating one electric signal into a plurality of electric signals. In addition, a plurality of low frequency band electrical signals input through the first wiring conductor are combined by the semiconductor element to become one high frequency frequency electrical signal. The high frequency band electrical signal passes through the second wiring conductor. The high frequency signal transmitted from the connector to the external device such as an external communication device is transmitted from the connector to the external device such as a communication device. The signals are converted into signals, and the electric signals having low frequency bands are transmitted to the external electric circuit via the first wiring conductor.
[0006]
The connector usually has a structure in which a metal wire such as copper is surrounded by an enclosure made of an insulating material such as ceramics. The connector wire and the second wiring conductor are connected to the connector. When the wire expands due to heat, it is connected to a length of about 2 mm (2000 μm) or more in order to prevent it from coming off from the second wiring conductor, thereby increasing the connection area.
[0007]
[Patent Document 1]
Japanese Patent Laid-Open No. 2002-164466
[Problems to be solved by the invention]
However, in this conventional package for housing a semiconductor element and semiconductor device, the wire material of the connector is connected to the second wiring conductor over a length of 2 mm or more, and the impedance at the connecting portion between the second wiring conductor and the connector is The total with the wire becomes a low impedance lower than the others, and the low impedance region is 2 mm or more. Therefore, when a high-frequency electrical signal of 40 GHz to 80 GHz is transmitted between the second wiring conductor and the connector wire, the high-frequency electrical signal has a low impedance (the second wiring conductor and the connector wire are In the region connected over 2 mm or more), reflection and the like are caused, and the transmission characteristics are greatly deteriorated.
[0009]
Further, in this conventional semiconductor element housing package and semiconductor device, the base is formed of an aluminum oxide sintered body, a mullite sintered body, or the like, and its linear expansion coefficient is 7.5 × 10 −6 / ° C. On the other hand, the wire material of the connector is made of copper or the like having a linear expansion coefficient of about 16 × 10 −6 / ° C., and the linear expansion coefficient of the substrate and the linear expansion coefficient of the connector wire material are greatly different. After connecting the connector wire to the second wiring conductor provided on the wire, if the heat acts on the base and the wire, the wire expands more than the base, and as a result, the wire is detached from the second wiring conductor provided on the base. As a result, the reliability as a package for housing a semiconductor element or a semiconductor device is greatly reduced.
[0010]
The present invention has been devised in view of the above drawbacks, and its object is to firmly connect the connector wire to the second wiring conductor provided on the base, and to connect the second wiring conductor and the connector wire. An object of the present invention is to provide a semiconductor device housing package and a semiconductor device that effectively prevent reflection of a high-frequency electrical signal in the semiconductor device and have excellent transmission characteristics.
[0011]
[Means for Solving the Problems]
A package for housing a semiconductor element of the present invention includes a base body having a mounting portion for mounting a semiconductor element that transmits or receives an electrical signal of 40 GHz to 80 GHz, a wiring conductor led out from the mounting portion of the base body, A connector including a conductive wire, and the wire is electrically connected to the wiring conductor.
[0012]
And the semiconductor element storage package of the present invention, the base is composed of a glass ceramic sintered body containing a crystal phase selected from the group consisting of quartz, cristobalite, tridymite, enstatite and forsterite, The wire is made of beryllium-copper, and the connection length between the wire of the connector and the wiring conductor is 800 μm or less.
[0013]
A semiconductor device according to the present invention includes a semiconductor element storage package having the above-described configuration and a semiconductor element mounted on the mounting portion .
[0014]
In the package for housing a semiconductor element and the semiconductor device of the present invention, the difference in linear expansion coefficient between the substrate and the wire of the connector can be reduced (for example, 8.0 × 10 −6 / ° C. or less ) . after connecting the connector wires of the wiring conductor, should always be connected to the wire of the connector to a substrate and wiring conductors rather than being disengaged wire is larger thermal expansion than the substrate even heat the wire acts It becomes possible. Therefore, in the semiconductor element storage package and the semiconductor device, even if the connection length between the wiring conductor and the wire is shorter than 2 mm (for example, 800 μm or less), the wiring conductor is separated from the wiring conductor due to thermal expansion of the connector wire. It is possible to prevent the wire from coming off. Therefore, in the semiconductor element storage package and the semiconductor device, the connection between the wiring conductor and the wire of the connector is kept strong, and reflection in the connection region between the wiring conductor and the wire of the connector is effectively prevented to improve the transmission characteristics. It can be excellent .
[0015]
DETAILED DESCRIPTION OF THE INVENTION
Next, the present invention will be described in detail with reference to the accompanying drawings.
FIG. 1 shows an embodiment of a package for housing a semiconductor device according to the present invention. Reference numeral 1 denotes a base, 2a denotes a first wiring conductor, 2b denotes a ground wiring conductor, 3a denotes an input / output pad, 3b denotes a ground pad, The second wiring conductor 5 is a connector. A semiconductor element housing package 7 for housing the semiconductor element 6 by the substrate 1, the first wiring conductor 2a, the ground wiring conductor 2b, the input / output pad 3a, the ground pad 3b, the second wiring conductor 4 and the connector 5 is provided. Basically composed.
[0016]
The substrate 1 is made of an electrically insulating material such as an aluminum oxide sintered body, a mullite sintered body, a glass ceramic, an aluminum nitride sintered body. For example, when the substrate 1 is made of an aluminum oxide sintered body, An appropriate organic solvent, solvent, plasticizer, and dispersing agent are added to and mixed with raw material powders such as silicon, magnesium oxide, and calcium oxide to make a mud, and this mud is made by a conventionally known doctor blade method, calender roll method, etc. A ceramic green sheet (ceramic green sheet) is obtained by forming a sheet by using a sheet forming method, and then appropriately punching the ceramic green sheet and laminating a plurality of sheets as necessary. It is manufactured by firing at a high temperature of 1600 ° C.
[0017]
The base 1 is formed with a plurality of first wiring conductors 2a and ground wiring conductors 2b from the semiconductor element mounting portion 1a to the lower surface, and the wiring conductors 2a and 2b are input / output electric signals of the semiconductor elements. Each of the electrodes for grounding and grounding acts as a conductive path for connecting to the input / output pad 3a and the grounding pad 3b, and one end on the mounting portion 1a side is for electrical signal input / output of the semiconductor element 6 and grounding These electrodes are electrically connected through a conductive connecting material.
[0018]
The first wiring conductor 2a, the ground wiring conductor 2b, the input / output pad 3a, and the ground pad 3b are made of a metal material such as copper, silver, gold, palladium, tungsten, molybdenum, manganese, for example, copper. If so, the metal paste formed by adding an organic solvent or the like to the copper powder is printed on the surface of the ceramic green sheet serving as the substrate 1 in a predetermined pattern.
[0019]
One end of the first wiring conductor 2a and the ground wiring conductor 2b on the lower surface side of the base body 1 is electrically connected to the corresponding input / output pad 3a and ground pad 3b, respectively, and these input / output pads 3a. By connecting the ground pad 3b to a predetermined signal or ground circuit conductor of the external electric circuit, the electric signal input / output and ground electrodes of the semiconductor element 6 are electrically connected to the external electric circuit. Connected.
[0020]
The base 1 has a second wiring conductor 4 formed from the semiconductor element mounting portion 1 a to the upper surface, side surface, and the like. The second wiring conductor 4 connects the electrode of the semiconductor element 6 to the wire 5 a of the connector 5. The electrode of the semiconductor element 6 is electrically connected to one end on the mounting portion 1a side via the conductive connecting material 8.
[0021]
The second wiring conductor 4 is made of a metal material such as copper, silver, gold, palladium, tungsten, molybdenum, manganese, etc., like the first wiring conductor 2a described above. It is formed by printing a metal paste obtained by adding an organic solvent or the like to the powder in a predetermined pattern on the surface of the ceramic green sheet serving as the substrate 1.
[0022]
One end of the second wiring conductor 4 on the outer surface side of the base 1 is electrically connected to the wire 5a of the connector 5, and the connector 5 is connected to an external device such as a communication device via a coaxial cable or the like. High frequency signals are transmitted and received between the semiconductor element 6 and the external device.
[0023]
The connector 5 acts as a connection body for connecting the second wiring conductor 4 of the semiconductor element storage package 7 to an external device via a coaxial cable or the like. For example, copper, Fe—Ni—Co alloy, Fe— This is a structure in which a metal wire such as a Ni alloy is surrounded by an insulating envelope 5b such as borosilicate glass.
[0024]
The connector 5 comprising the wire 5a and the outer enclosure 5b is, for example, in which a wire 5a made of copper is set in the center of a cylindrical container made of metal such as copper, and a glass powder such as borosilicate glass is placed in the container. Then, the glass powder is heated and melted and deposited around the wire 5a.
[0025]
Thus, according to the above-described package for housing a semiconductor element, the semiconductor element 6 is mounted on the mounting portion 1a of the base 1 and fixed through an adhesive such as glass, resin, brazing material, and then each of the semiconductor elements 6 is mounted. The electrodes are connected to the first wiring conductor 2a and the ground wiring conductor 2b through, for example, bonding wires 8, and finally the lid body 10 is bonded to the upper surface of the base body 1 through a sealing material, so that the semiconductor element 6 is bonded. The semiconductor device 11 is formed by hermetically sealing.
[0026]
In this semiconductor device 11, input / output pads 3a and ground pads 3b on the lower surface of the substrate 1 are connected to predetermined signal or ground circuit conductors of an external electric circuit board via external terminals such as solder bumps. Thus, the signal and ground electrodes of the semiconductor element 6 are electrically connected to an external electric circuit.
[0027]
Further, by connecting an external connection conductor such as a coaxial cable to the wire 5a of the connector 5 attached to the semiconductor device 11, the electrode of the semiconductor element 6 is connected to an external device such as a communication device.
[0028]
The semiconductor device 11 inputs a plurality of low frequency band (5 to 10 GHz) electric signals supplied from an external electric circuit to the semiconductor element 6 through the first wiring conductor 2a, and these are input by the semiconductor element 6. The electrical signal is combined into an electrical signal having a high frequency band (40 to 80 GHz) and output to the connector 5 through the second wiring conductor 4, and externally connected through the wire 5a of the connector 5. An electrical signal that is transmitted to an external device such as a communication device or is transmitted from an external device such as an external communication device (40 to 80 GHz) is transmitted through the wire 5a and the second wiring conductor 4 of the connector 5. To the semiconductor element 6, and an electric signal having a high frequency band (40 to 80 GHz) input by the semiconductor element 6 has a plurality of low frequency bands (5 to 10 GHz). The electrical signals of these individual frequency band is low and converts the electrical signal through the first wiring conductor 2a so that the supply to an external electrical circuit.
[0029]
In the semiconductor element housing package and the semiconductor device using the same according to the present invention, it is important that the connection length between the second wiring conductor 4 and the wire 5a of the connector 5 is 800 μm or less.
[0030]
If the connection length between the second wiring conductor 4 and the wire 5a of the connector 5 is 800 μm or less, the length of the low impedance region at the connection portion between the second wiring conductor 4 and the wire 5a of the connector 5 becomes extremely short. As a result, even if a high-frequency electrical signal of 40 GHz to 80 GHz is transmitted to the wire 5a of the second wiring conductor 4 and the connector 5, the low impedance region is short, so that no large reflection occurs and the transmission characteristics are extremely excellent. Can be made.
[0031]
When the length of the connecting portion between the second wiring conductor 4 and the wire 5a of the connector 5 exceeds 800 μm, the low impedance region at the connecting portion between the second wiring conductor 4 and the wire 5a of the connector 5 becomes long. When a high frequency electric signal of 40 GHz to 80 GHz is transmitted between the wiring conductor 4 and the wire 5a of the connector 5, reflection or the like is caused at the connection portion, and the transmission characteristics are greatly deteriorated. Therefore, the length of the connecting portion between the second wiring conductor 4 and the wire 5a of the connector 5 is specified to be 800 μm or less.
[0032]
In the package for housing a semiconductor element and the semiconductor device of the present invention, it is important that the difference in coefficient of linear expansion between the substrate 1 and the wire 5a of the connector 5 is 8.0 × 10 −6 / ° C. or less.
[0033]
When the difference in linear expansion coefficient between the substrate 1 and the wire 5a of the connector 5 is 8.0 × 10 −6 / ° C. or less, the wire 5a of the connector 5 is connected to the second wiring conductor 4 provided on the substrate 1, Even if heat is applied to the base 1 and the wire 5a, the wire 5a does not thermally expand and disengage from the base 1, so that the wire 5a of the connector 5 can always be connected to the second wiring conductor 4. It becomes.
[0034]
When the difference in linear expansion coefficient between the substrate 1 and the wire 5a of the connector 5 exceeds 8.0 × 10 −6 / ° C., the wire 5a of the connector 5 is connected to the second wiring conductor 4 provided on the substrate 1, and then the substrate When heat is applied to the wire 1 and the wire 5 a, the wire 5 a expands larger than the base 1, and the wire 5 a is detached from the second wiring conductor 4. Therefore, the difference in coefficient of linear expansion between the substrate 1 and the wire 5a of the connector 5 is specified to be 8.0 × 10 −6 / ° C. or less.
[0035]
As a specific material of the substrate 1 and the wire 5a when the difference in linear expansion coefficient between the substrate 1 and the wire 5a of the connector 5 is 8.0 × 10 −6 / ° C. or less, the substrate 1 is sintered with aluminum oxide. Body (linear expansion coefficient: 7.5 × 10 −6 / ° C.), the wire 5a is an iron-nickel-cobalt alloy, and the substrate 1 is a crystal of high thermal expansion quartz, cristobalite, tridymite, enstatite, forsterite, etc. In the case of a glass ceramic sintered body containing a phase (linear expansion coefficient: about 16.0 × 10 −6 / ° C.), beryllium-copper is preferably used for the wire 5a.
[0036]
In addition, this invention is not limited to the above-mentioned Example, A various change is possible if it is a range which does not deviate from the summary of this invention.
[0037]
【The invention's effect】
According to the semiconductor element storage package and the semiconductor device of the present invention, since the connection length between the second wiring conductor and the connector wire is shortened to 800 μm or less, in the connection portion between the second wiring conductor and the connector wire. The length of the low impedance region is extremely short, and as a result, even if a high frequency electric signal of 40 GHz to 80 GHz is transmitted to the second wiring conductor and the wire of the connector, the low impedance region is short and causes a large reflection. It is possible to improve the transmission characteristics.
[0038]
Further, according to the semiconductor element storage package and the semiconductor device of the present invention, since the difference in coefficient of linear expansion between the substrate and the wire of the connector is 8.0 × 10 −6 / ° C. or less, the second wiring conductor provided on the substrate After the connector wire is connected to the connector, even if heat acts on the base and the wire, the wire does not expand by thermal expansion from the base and the connector wire can always be connected to the second wiring conductor. It becomes.
[Brief description of the drawings]
FIG. 1 is a cross-sectional view showing an embodiment of a semiconductor element housing package and a semiconductor device using the semiconductor element housing package of the present invention.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 ... Base | substrate 1a ... Mounting part 2a ... 1st wiring conductor 2b ... Ground wiring conductor 3a ... Input / output pad 3b ... Ground pad 4 2nd wiring conductor 5 Connector 5a Wire 5b Enclosure 6 Semiconductor element 7 Package 8 for housing semiconductor elements .... Bonding wire 10 ... Lid 11 ... Semiconductor device

Claims (2)

４０ＧＨｚ〜８０ＧＨｚの電気信号を送信または受信する半導体素子を搭載するための搭載部を有する基体と、該基体の前記搭載部から導出されている配線導体と、導電性の線材を含み、該線材が前記配線導体に電気的に接続されているコネクターとを備え、
前記基体は、クォーツ、クリストバライト、トリジマイト、エンスタタイトおよびフォルステライトからなる群より選択される結晶相を含有するガラスセラミック焼結体により構成されており、
前記線材は、ベリリウム−銅により構成されており、
前記コネクターの前記線材と前記配線導体との接続長さが８００μｍ以下であることを特徴とする半導体素子収納用パッケージ。A substrate having a mounting portion for mounting a semiconductor element that transmits or receives an electrical signal of 40 GHz to 80 GHz, a wiring conductor led out from the mounting portion of the substrate, and a conductive wire, A connector electrically connected to the wiring conductor;
The substrate is quartz, cristobalite, tridymite, is constituted by a glass-ceramic sintered body containing crystal phase selected from the group consisting of enstatite and forsterite,
The wire is beryllium - is composed of copper,
A package for housing a semiconductor element , wherein a connection length between the wire of the connector and the wiring conductor is 800 μm or less . 請求項１に記載の半導体素子収納用パッケージと、前記搭載部に搭載された半導体素子とを備えることを特徴とする半導体装置。A semiconductor device comprising: the semiconductor element storage package according to claim 1, further comprising a semiconductor element mounted on the mounting portion.
JP2002321748A 2002-11-05 2002-11-05 Semiconductor element storage package and semiconductor device using the same Expired - Fee Related JP3808421B2 (en)

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