JP3811459B2 - Semiconductor device - Google Patents

Semiconductor device Download PDF

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Publication number
JP3811459B2
JP3811459B2 JP2003076338A JP2003076338A JP3811459B2 JP 3811459 B2 JP3811459 B2 JP 3811459B2 JP 2003076338 A JP2003076338 A JP 2003076338A JP 2003076338 A JP2003076338 A JP 2003076338A JP 3811459 B2 JP3811459 B2 JP 3811459B2
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wiring conductor
semiconductor element
mounting portion
ground
semiconductor device
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JP2004288734A (en
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学 米倉
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Kyocera Corp
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Kyocera Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance

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Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor device which can properly transmit an electric signal of a high frequency ranging from 40 to 80 GHz between a semiconductor element and a connector without causing reflection or the like. <P>SOLUTION: The semiconductor device includes a semiconductor element 6 for transmitting/receiving a high frequency electric signal, placed in a semiconductor element containing package 7 having a base 1, a ground wiring conductor 2b and a first wiring conductor 2a, a ground pad 3b and input/output pads 3a electrically connected to the ground wiring conductor 2b and the first wiring conductor 2a, a second wiring conductor 4 and a connector 5 electrically connected to the second wiring conductor 4 in such a manner that the electrodes of the semiconductor element are connected to the ground wiring conductor 2b, and the first wiring conductor 2a and the second wiring conductor 4 via bonding wires 8a, 8b. In this semiconductor device, the base 1 has a bulged part 1b bulged to the mounting part 1a side at the part having the second wiring conductor 4 formed at the frame part surrounding the mounting part 1a, and the second wiring conductor 4 extended to the upper surface of the bulged part 1a. <P>COPYRIGHT: (C)2005,JPO&amp;NCIPI

Description

【０００１】
【発明の属する技術分野】
本発明は高周波の電気信号を送受信する半導体素子を半導体素子収納用パッケージ内に気密に収容して成る半導体装置に関するものである。
【０００２】
【従来の技術】
近年、光通信や無線通信等の機器には多数の半導体装置が使用されており、かかる半導体装置は一般に、高周波の電気信号を送受信する半導体素子を半導体素子収納用パッケージ内に気密に収容することによって形成されている。
【０００３】
前記半導体素子収納用パッケージは、通常、酸化アルミニウム質焼結体、ムライト質焼結体、窒化アルミニウム質焼結体、ガラスセラミックス等の電気絶縁材料から成り、上面に半導体素子の搭載部が形成された基体と、タングステン、モリブデン、マンガン、銅、銀等の金属材料から成り、基体の半導体素子搭載部から下面にかけて被着導出された複数の入出力用配線導体（第１配線導体）およびグランド用配線導体と、この配線導体と電気的に接続するようにして基体の下面に形成された複数個のグランド用パッドおよび入出力用パッドと、基体の搭載部より上面もしくは側面にかけて導出されている出入力用配線導体（第２配線導体）と、この出入力用配線導体（第２配線導体）に一端が接続されるとともに他端が外部に導出されているコネクターとにより構成されている。
【０００４】
そして、かかる半導体素子収納用パッケージには、その搭載部に電気信号を送受信する半導体素子がガラス−エポキシ樹脂や銀−エポキシ樹脂等の接合材を介して接着固定されるとともに、半導体素子の各電極が入出力配線導体（第１配線導体）、グランド配線導体および出入力配線導体（第２配線導体）にボンディングワイヤを介して接続され、その後、必要に応じて蓋体等で半導体素子を封止することによって半導体装置となる。
【０００５】
また前記半導体装置は基体の下面に形成されているグランド用パッドおよび入出力用パッドを外部電気回路基板の回路導体に半田バンプ等を介し接続させることによって内部に収容する半導体素子が外部電気回路に接続され、同時にコネクターに同軸ケーブル等を介し外部の通信装置等の外部機器を接続させることによって半導体素子と外部機器とが接続するようになっている。
【０００６】
なお、前記半導体装置に使用されている半導体素子は複数の電気信号を合成して一つの電気信号に変換する、或いは一つの電気信号を分離して複数の電気信号に変換する機能を有しており、外部電気回路から第１配線導体を介して入力される複数の周波数帯域が低い電気信号は半導体素子で合成されて一つの周波数帯域が高い電気信号となり、この周波数帯域の高い電気信号は第２配線導体を介してコネクターに伝送されるとともにコネクターより外部の通信装置等の外部機器に伝送され、またコネクターを介して外部機器より伝送された周波数帯域の高い電気信号は半導体素子で複数の周波数帯域が低い電気信号に変換され、各々の周波数帯域の低い電気信号は第１配線導体を介して外部電気回路に伝送されることとなる。
【０００７】
また前記半導体装置において、半導体素子の搭載部への接着固定は、半導体素子と搭載部表面との間に銀−エポキシ樹脂等の接合材を介在させておき、この接合材を加熱溶融させることにより行なわれており、半導体素子の搭載部表面における位置決めは、接合材を溶融させた後、半導体素子を、溶融している接合材の上を滑らせるようにして微調整しながら移動させることにより行なわれる。
【０００８】
【特許文献１】
特開２００２−１６４４６６号公報
【０００９】
【発明が解決しようとする課題】
しかしながら、この従来の半導体装置においては、半導体素子を搭載部上に接着固定するときに、半導体素子の側面と、基体の搭載部を取り囲む枠状の部分の側面との間に溶融した接合材が介在するため、この接合材が妨げになって両側面間の距離を短くすることが難しく、通常は１ｍｍ以上となっており、これに応じて、半導体素子の電極と第２配線導体とを接続するボンディングワイヤの長さも１ｍｍ以上と長くなっていたこと、第２配線導体が比誘電率約２〜１０の基体上に形成されているのに対しボンディングワイヤはその周囲が比誘電率１の空気で囲まれており、ボンディングワイヤのインピーダンスが第２配線導体のインピーダンスよりも高くなっていること等から半導体素子とコネクターを結ぶ線路中にインピーダンスが他よりも高い領域が１ｍｍ以上の長さにわたって形成されていることとなる。そのため、この第２配線導体とボンディングワイヤとを介してコネクターと半導体素子との間に４０ＧＨｚ〜８０ＧＨｚの高周波の電気信号を伝送させた場合、インピーダンスが高いボンディングワイヤで信号に反射等を起こし、伝送特性が大きく劣化するという欠点を有していた。
【００１０】
本発明は上記欠点に鑑み案出されたもので、その目的は半導体素子とコネクターとの間に４０ＧＨｚ〜８０ＧＨｚの高周波の電気信号を反射等を起こすことなく良好に伝送させることができる半導体装置を提供することにある。
【００１１】
【課題を解決するための手段】
本発明の半導体装置は、半導体素子が搭載される搭載部を有する基体と、該基体の前記搭載部より下面にかけて導出されている複数個のグランド配線導体および第１配線導体と、前記基体の下面に形成され、前記グランド配線導体および第１配線導体に電気的に接続している複数個のグランド用パッドおよび入出力用パッドと、前記基体の搭載部より上面もしくは側面にかけて導出されている第２配線導体と、前記基体における前記第２配線導体が形成された面と側面との間の角部に形成された切欠きに嵌め込まれるように取着され、前記第２配線導体に電気的に接続されているコネクターとから成る半導体素子収納用パッケージと、４０ＧＨｚ乃至８０ＧＨｚの電気信号を送受信する半導体素子とで構成され、前記半導体素子収納用パッケージの搭載部に半導体素子を搭載固定するとともに該半導体素子の各電極をグランド配線導体、第１配線導体、第２配線導体にボンディングワイヤを介し電気的に接続して成る半導体装置であって、前記基体は、前記搭載部を取り囲む枠状の部分のうち前記第２配線導体が形成されている部位において前記搭載部側に膨出する膨出部が形成されており、該膨出部の上面に前記第２配線導体が延出されていることを特徴とするものである。
【００１２】
また本発明の半導体装置は、前記膨出部の先端と前記半導体素子の側面とが当接していることを特徴とするものである。
【００１３】
本発明の半導体装置によれば、半導体素子が搭載される搭載部を取り囲む枠状の部分のうち第２配線導体が形成されている部位において、搭載部側に膨出する膨出部を形成し、該膨出部の上面に第２配線導体を延出させたことから、半導体素子の側面と基体の搭載部を取り囲む枠状の部分の側面との間に接合材が介在したとしても、膨出部の先端を半導体素子の側面に、例えば両者間の距離が０．２ｍｍ以下となるように、近付けることができるので、その膨出部の上面に延出させた第２配線導体と半導体素子の電極との間の距離を短くして、両者を接続するボンディングワイヤ長さを従来よりも大幅に短くすることができ、第２配線導体とボンディングワイヤとを介してコネクターと半導体素子との間に４０ＧＨｚ〜８０ＧＨｚの高周波の電気信号を伝送させた場合、インピーダンスが高いボンディングワイヤが短いことから信号に大きな反射等を起こすことはほとんどなく、伝送特性を優れたものとなすことができる。
【００１４】
【発明の実施の形態】
次に、本発明を添付図面に基づき詳細に説明する。
【００１５】
図１は本発明の半導体装置の一実施例を示し、半導体素子収納用パッケージ７内に半導体素子６を収容して構成されている。
【００１６】
前記半導体素子収納用パッケージ７は、基体１、第１配線導体２ａ、グランド配線導体２ｂ、入出力用パッド３ａ、グランド用パッド３ｂ、第２配線導体４およびコネクター５により形成されている。
【００１７】
前記基体１は酸化アルミニウム質焼結体、ムライト質焼結体、ガラスセラミックス、窒化アルミニウム質焼結体等の電気絶縁材料から成り、例えば、酸化アルミニウム質焼結体から成る場合、酸化アルミニウム、酸化ケイ素、酸化マグネシウム、酸化カルシウム等の原料粉末に適当な有機溶剤、溶媒、可塑剤、分散剤を添加混合して泥漿物を作り、この泥漿物を従来周知のドクターブレード法やカレンダーロール法等のシート形成法を採用しシート状に形成してセラミックグリーンシート（セラミック生シート）を得、しかる後、それらセラミックグリーンシートに適当な打ち抜き加工を施すとともにこれを必要に応じて複数枚積層し、約１６００℃の高温で焼成することによって製作される。
【００１８】
また前記基体１は、半導体素子の搭載部１ａから下面にかけて複数個の第１配線導体２ａおよびグランド配線導体２ｂが形成されており、該各配線導体２ａ、２ｂは半導体素子６の電気信号入出力用、接地用の各電極を、入出力用パッド３ａやグランド用パッド３ｂに接続するための導電路として作用し、搭載部１ａ側の一端には半導体素子６の電気信号入出力用、接地用の各電極がボンディングワイヤ８ａを介して電気的に接続される。
【００１９】
前記第１配線導体２ａおよびグランド配線導体２ｂ、入出力用パッド３ａおよびグランド用パッド３ｂは、銅、銀、金、パラジウム、タングステン、モリブデン、マンガン等の金属材料から成り、例えば銅から成る場合であれば、銅粉末に有機溶剤を添加して成る金属ペーストを基体１となるセラミックグリーンシートの表面にスクリーン印刷等により所定パターンに印刷しておくことによって形成される。
【００２０】
この第１配線導体２ａおよびグランド配線導体２ｂの基体１下面側の一端は、それぞれ対応する入出力用パッド３ａおよびグランド用パッド３ｂと電気的に接続しており、これらの入出力用パッド３ａ、グランド用パッド３ｂを外部電気回路の所定の信号用や接地用等の回路導体に接続することにより、半導体素子６の電気信号入出力用、接地用の各電極が外部電気回路と電気的に接続される。
【００２１】
また前記基体１は、半導体素子の搭載部１ａから上面や側面等にかけて第２配線導体４が形成されており、該第２配線導体４は半導体素子６の電極をコネクター５の線材５ａに接続するための導電路として作用し、搭載部１ａ側の一端には半導体素子６の電極がボンディングワイヤ８ｂを介して電気的に接続される。
【００２２】
前記第２配線導体４は、上述の第１配線導体２ａ等と同様に、銅、銀、金、パラジウム、タングステン、モリブデン、マンガン等の金属材料から成り、例えば銅から成る場合であれば、銅粉末に有機溶剤等を添加して成る金属ペーストを基体１となるセラミックグリーンシートの表面にスクリーン印刷等により所定パターンに印刷しておくことによって形成される。
【００２３】
この第２配線導体４の基体１外表面側の一端はコネクター５の線材５ａと電気的に接続しており、このコネクター５を同軸ケーブル等を介して通信装置等の外部機器に接続することにより半導体素子６と外部機器との間で高周波信号の送受信が行われる。
【００２４】
前記コネクター５は、半導体素子収納用パッケージ７の第２配線導体４を同軸ケーブル等を介して外部機器に接続するための接続体として作用し、例えば、鉄−ニッケル−コバルト合金等の金属の線材５ａの周囲を、ホウ珪酸系ガラス等の絶縁性の外囲体５ｂで取り囲んだ構造である。
【００２５】
前記線材５ａと外囲体５ｂとから成るコネクター５は、例えば、鉄−ニッケル−コバルト合金から成る線材５ａを、鉄−ニッケル−コバルト合金等の金属から成る円筒状の容器の中央にセットし、容器内にホウ珪酸ガラス等のガラス粉末を充填した後、ガラス粉末を加熱溶融させて線材５ａの周囲に被着させることによって製作される。
【００２６】
かくして上述の半導体素子収納用パッケージによれば、基体１の搭載部１ａに半導体素子６を搭載するとともにガラス−エポキシ樹脂や銀−エポキシ樹脂等の接着材を介して固定し、しかる後、半導体素子６の各電極を第１配線導体２ａおよびグランド用配線導体２ｂおよび第２配線導体４に、ボンディングワイヤ８ａ、８ｂを介して接続し、最後に蓋体１０を基体１の上面に封止材を介して接合させ、半導体素子６を気密に封入することによって半導体装置１１となる。
【００２７】
この半導体装置１１は基体１下面の入出力用パッド３ａおよびグランド用パッド３ｂが外部電気回路基板の所定の信号用や接地用等の回路導体に半田バンプ等の外部端子を介して接続され、これによって半導体素子６の信号用、接地用の各電極は外部電気回路と電気的に接続される。
【００２８】
また、この半導体装置１１に取着されているコネクター５の線材５ａに同軸ケーブル等の外部接続用の導線を接続することにより、半導体素子６の電極が通信装置等の外部機器に接続される。
【００２９】
そしてかかる半導体装置１１は、外部電気回路から供給される複数の周波数帯域が低い（５〜１０ＧＨｚ）電気信号を第１配線導体２ａを介して半導体素子６に入力させ、半導体素子６でこれら入力された電気信号を合成して、一つの周波数帯域が高い（４０〜８０ＧＨｚ）電気信号とするとともにこれを第２配線導体４を介してコネクター５に出力し、該コネクター５の線材５ａを介して外部の通信装置等の外部機器に伝送する、或いは、外部の通信装置等の外部機器から伝送された一つの周波数帯域が高い（４０〜８０ＧＨｚ）電気信号をコネクター５の線材５ａ及び第２配線導体４を介して半導体素子６に入力し、半導体素子６で入力された周波数帯域が高い（４０〜８０ＧＨｚ）電気信号を複数の周波数帯域が低い（５〜１０ＧＨｚ）電気信号に変換するとともにこれらの個々の周波数帯域が低い電気信号を第１配線導体２ａを介して外部電気回路に供給することとなる。
【００３０】
本発明の半導体装置においては、図２に示す如く、基体１の、搭載部１ａを取り囲む枠状の部分のうち第２配線導体４が形成されている部位において、搭載部１ａ側に膨出する膨出部１ｂを形成し、該膨出部１ｂの上面に第２配線導体４を延出させておくことが重要である。
【００３１】
このように、基体１の、搭載部１ａを取り囲む枠状の部分のうち第２配線導体４が形成されている部位において、搭載部１ａ側に膨出する膨出部１ｂを形成し、該膨出部１ｂの上面に第２配線導体４を延出させておくと、半導体素子６を搭載部１ａ上に接着固定する際、半導体素子６の側面と基体１の搭載部１ａを取り囲む枠状の部分の側面との間に銀−エポキシ樹脂等の接合材が介在したとしても、膨出部１ｂの先端を半導体素子６の側面に近付けることができるので、その膨出部１ｂの上面に延出させた第２配線導体４と半導体素子６の電極との間の距離を短くして、両者を接続するボンディングワイヤ８ｂの長さを、従来の１ｍｍ程度に比べて大幅に短くすることができ、その結果、第２配線導体４とボンディングワイヤ８ｂとを介してコネクター５と半導体素子６との間に４０ＧＨｚ〜８０ＧＨｚの高周波の電気信号を伝送させた場合、インピーダンスが高いボンディングワイヤが短いことから信号に大きな反射等を起こすことはほとんどなく、伝送特性を優れたものとなすことができる。
【００３２】
この場合、前記膨出部１ｂの先端と半導体素子６の側面との間の距離を０．２ｍｍ以下としておくと、膨出部１ｂの上面に延出させた第２配線導体４と、半導体素子６の電極との間の距離を０．２ｍｍ以下と短くし、これにより両者を接続するボンディングワイヤ８ｂの長さを確実に０．３ｍｍ以下と極めて短いものとなすことができるので、第２配線導体４とボンディングワイヤ８ｂとを介してコネクター５と半導体素子６との間に４０ＧＨｚ〜８０ＧＨｚの高周波の電気信号を伝送させた場合、インピーダンスが高いボンディングワイヤが極めて短いことから信号に大きな反射等を起こすことがより有効に阻止され、伝送特性をより一層確実に優れたものとなすことができる。従って、前記膨出部１ｂの先端と半導体素子６の側面との間の距離は０．２ｍｍ以下としておくことが好ましい。
【００３３】
なお、このような膨出部１ｂの形状は、図２に示したような円弧状のものに限らず、楕円円弧状や四角形状等としてもよい。
【００３４】
前記膨出部１ｂは、例えば、基体１となるグリーンシートに打ち抜き加工を施す際、搭載部１ａを取り囲む枠状の部分となる部位の所定位置に、円弧状等の膨出部分が形成されるようにして加工することにより形成することができる。
【００３５】
また、前記膨出部１ｂは、その先端が半導体素子６の側面に当接し支持するようなものとしておくと、半導体素子６を搭載部１ａに接着固定するときの位置決めがより容易となり、半導体素子６が所定位置に固定された半導体装置の形成をより一層容易なものとすることができる。したがって、前記膨出部１ｂは、その先端が半導体素子６の側面に当接するようにして搭載部１ａ側に膨出させておくことがより一層好ましい。
【００３６】
また、図３に示すように、基体１の、搭載部１ａを取り囲む枠状の部分のうち、前記膨出部１ｂの両側の部位に、搭載部１ａ側に膨出する補助膨出部１ｃを形成しておくと、半導体素子６の側面を膨出部１ｂと補助膨出部１ｃとによりさらに確実に支持させることができ、半導体素子６を搭載部１ａに接着固定するときの位置決めがさらに容易となり、半導体素子６が所定位置に固定された半導体装置の形成をより一層容易かつ確実なものとすることができる。したがって、本発明の半導体装置においては、基体１の、搭載部１ａを取り囲む枠状の部分のうち、前記膨出部１ｂの両側の部位に、搭載部１ａ側に膨出するような補助膨出部１ｃを形成しておくことがより一層好ましい。
【００３７】
なお、前記第２配線導体４と半導体素子６の電極とのボンディングワイヤ８ｂを介しての接続はウエッジボンド法、具体的には、金線等の長尺のボンディングワイヤをボンディング装置のワイヤ用キャピラリを通して第２配線導体４や半導体素子６の電極に当接させるとともに、キャピラリ先端の楔状の部分でボンディングワイヤを接続部位に押し付け、超音波振動、接合する方法により行なわれ、接合（ファーストボンド）後のキャピラリの移動角度を調節してボンディングワイヤのループを低くすることによりボンディングワイヤ８ｂの長さを、例えば０．３ｍｍ以下と極めて短いものとして、第２配線導体４と半導体素子６の電極に接続される。この場合、ボンディングワイヤは、例えばボールボンド法のように第２配線導体４等に接合させるために先端部分を溶融させて金属ボールを形成させるような必要がなく、キャピラリの移動角度によりループ高さを低く調整することができるため、ボンディングワイヤ８ｂの長さを確実に、例えば０．３ｍｍ以下と、極めて短いものとすることができる。
【００３８】
また、本発明は上述の実施例に限定されるものではなく、本発明の要旨を逸脱しない範囲であれば種々の変更は可能である。
【００３９】
【発明の効果】
本発明の半導体装置によれば、半導体素子が搭載される搭載部を取り囲む枠状の部分のうち第２配線導体が形成されている部位において、搭載部側に膨出する膨出部を形成し、該膨出部の上面に第２配線導体を延出させたことから、半導体素子の側面と基体の搭載部を取り囲む枠状の部分の側面との間に接合材が介在したとしても、膨出部の先端を半導体素子の側面に、例えば両者間の距離が０．２ｍｍ以下となるように、近付けることができるので、その膨出部の上面に延出させた第２配線導体と半導体素子の電極との間の距離を短くして、両者を接続するボンディングワイヤ長さを従来よりも大幅に短くすることができ、第２配線導体とボンディングワイヤとを介してコネクターと半導体素子との間に４０ＧＨｚ〜８０ＧＨｚの高周波の電気信号を伝送させた場合、インピーダンスが高いボンディングワイヤが短いことから信号に大きな反射等を起こすことはほとんどなく、伝送特性を優れたものとなすことができる。
【図面の簡単な説明】
【図１】本発明の半導体装置の一実施例を示す断面図である。
【図２】図１に示す半導体装置の要部拡大上面図である。
【図３】本発明の半導体装置の他の実施例を示す要部拡大上面図である。
【符号の説明】
１・・・・・・基体
１ａ・・・・・搭載部
１ｂ・・・・・膨出部
１ｃ・・・・・補助膨出部
２ａ・・・・・第１配線導体
２ｂ・・・・・グランド配線導体
３ａ・・・・・入出力用パッド
３ｂ・・・・・グランド用パッド
４・・・・・・第２配線導体
５・・・・・・コネクター
５ａ・・・・・線材
５ｂ・・・・・外囲体
６・・・・・・半導体素子
７・・・・・・半導体素子収納用パッケージ
８ａ、８ｂ・・ボンディングワイヤ
１０・・・・・蓋体
１１・・・・・半導体装置[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a semiconductor device in which a semiconductor element that transmits and receives high-frequency electrical signals is hermetically accommodated in a package for housing a semiconductor element.
[0002]
[Prior art]
In recent years, a large number of semiconductor devices are used in devices such as optical communication and wireless communication, and such semiconductor devices generally contain a semiconductor element that transmits and receives high-frequency electrical signals in a package for housing a semiconductor element. Is formed by.
[0003]
The package for housing a semiconductor element is usually made of an electrically insulating material such as an aluminum oxide sintered body, a mullite sintered body, an aluminum nitride sintered body, or a glass ceramic, and a semiconductor element mounting portion is formed on the upper surface. A plurality of input / output wiring conductors (first wiring conductors) and grounds, which are made of a base material and a metal material such as tungsten, molybdenum, manganese, copper, silver, etc. A wiring conductor, a plurality of ground pads and input / output pads formed on the lower surface of the substrate so as to be electrically connected to the wiring conductor, and an output led out from the mounting portion of the substrate to the upper surface or side surface. One end of the input wiring conductor (second wiring conductor) is connected to the input / output wiring conductor (second wiring conductor) and the other end is led out to the outside. It is constituted by a connector.
[0004]
In such a package for housing a semiconductor element, a semiconductor element that transmits and receives electrical signals is bonded and fixed to the mounting portion via a bonding material such as glass-epoxy resin or silver-epoxy resin, and each electrode of the semiconductor element is also fixed. Is connected to the input / output wiring conductor (first wiring conductor), the ground wiring conductor and the input / output wiring conductor (second wiring conductor) via bonding wires, and then the semiconductor element is sealed with a lid or the like as necessary. As a result, a semiconductor device is obtained.
[0005]
In the semiconductor device, a ground pad and an input / output pad formed on the lower surface of the base are connected to a circuit conductor of an external electric circuit board through a solder bump or the like, so that a semiconductor element accommodated in the semiconductor device is an external electric circuit. At the same time, an external device such as an external communication device is connected to the connector via a coaxial cable or the like, so that the semiconductor element and the external device are connected.
[0006]
The semiconductor element used in the semiconductor device has a function of synthesizing and converting a plurality of electric signals into one electric signal, or separating one electric signal into a plurality of electric signals. A plurality of low frequency band electric signals input from the external electric circuit through the first wiring conductor are combined by the semiconductor element to become one high frequency electric signal. A high-frequency electrical signal transmitted to an external device such as an external communication device or the like from the connector via two wiring conductors and transmitted from the external device via the connector is a semiconductor element with a plurality of frequencies. The electric signal having a low band is converted into an electric signal, and the electric signal having a low frequency band is transmitted to an external electric circuit via the first wiring conductor.
[0007]
In the semiconductor device, the bonding and fixing of the semiconductor element to the mounting portion is performed by interposing a bonding material such as silver-epoxy resin between the semiconductor element and the mounting portion surface, and heating and melting the bonding material. Positioning on the surface of the mounting portion of the semiconductor element is performed by melting the bonding material and then moving the semiconductor element with fine adjustment so that the semiconductor element slides on the molten bonding material. It is.
[0008]
[Patent Document 1]
Japanese Patent Laid-Open No. 2002-164466
[Problems to be solved by the invention]
However, in this conventional semiconductor device, when the semiconductor element is bonded and fixed on the mounting portion, a molten bonding material is formed between the side surface of the semiconductor element and the side surface of the frame-shaped portion surrounding the mounting portion of the base. Therefore, it is difficult to shorten the distance between both side surfaces due to this bonding material, and it is usually 1 mm or more. Accordingly, the electrode of the semiconductor element and the second wiring conductor are connected accordingly. The length of the bonding wire to be increased is 1 mm or more, and the second wiring conductor is formed on the substrate having a relative dielectric constant of about 2 to 10, whereas the bonding wire has an air with a relative dielectric constant of 1 around it. The impedance of the bonding wire is higher than the impedance of the second wiring conductor. So that the region higher is formed over a length of 1 mm. Therefore, when a high frequency electrical signal of 40 GHz to 80 GHz is transmitted between the connector and the semiconductor element via the second wiring conductor and the bonding wire, the signal is reflected and transmitted by the bonding wire having a high impedance. It had the disadvantage that the characteristics deteriorated greatly.
[0010]
The present invention has been devised in view of the above-mentioned drawbacks, and its purpose is to provide a semiconductor device that can transmit a high-frequency electric signal of 40 GHz to 80 GHz between a semiconductor element and a connector without causing reflection or the like. It is to provide.
[0011]
[Means for Solving the Problems]
The semiconductor device of the present invention includes a base having a mounting portion on which a semiconductor element is mounted, a plurality of ground wiring conductors and first wiring conductors led out from the mounting portion to the lower surface of the base, and a lower surface of the base A plurality of ground pads and input / output pads electrically connected to the ground wiring conductor and the first wiring conductor, and a second lead extended from the mounting portion of the base to the upper surface or side surface. The wiring conductor is attached so as to be fitted into a notch formed at a corner between the side surface of the base body on which the second wiring conductor is formed, and is electrically connected to the second wiring conductor. A package for housing a semiconductor element, and a semiconductor element for transmitting and receiving an electrical signal of 40 GHz to 80 GHz. A semiconductor device in which a semiconductor element is mounted and fixed on a mounting portion of the device and each electrode of the semiconductor element is electrically connected to a ground wiring conductor, a first wiring conductor, and a second wiring conductor via bonding wires, The base has a bulging portion that bulges toward the mounting portion at a portion where the second wiring conductor is formed in a frame-shaped portion surrounding the mounting portion, and an upper surface of the bulging portion Further, the second wiring conductor is extended.
[0012]
The semiconductor device according to the present invention is characterized in that a tip of the bulging portion is in contact with a side surface of the semiconductor element.
[0013]
According to the semiconductor device of the present invention, a bulging portion that bulges toward the mounting portion is formed at a portion where the second wiring conductor is formed in the frame-shaped portion surrounding the mounting portion on which the semiconductor element is mounted. Since the second wiring conductor is extended on the upper surface of the bulging portion, even if a bonding material is interposed between the side surface of the semiconductor element and the side surface of the frame-shaped portion surrounding the mounting portion of the base body, Since the leading end of the protruding portion can be brought close to the side surface of the semiconductor element, for example, so that the distance between them is 0.2 mm or less, the second wiring conductor and the semiconductor element extended to the upper surface of the protruding portion The distance between the two electrodes can be shortened, and the length of the bonding wire connecting the two can be made significantly shorter than before, and between the connector and the semiconductor element via the second wiring conductor and the bonding wire. Of high frequency of 40 GHz to 80 GHz If allowed to transmit the electrical signal, seldom causing significant reflection or the like on a signal from the impedance is high bonding wires short, can be made with excellent transmission characteristics.
[0014]
DETAILED DESCRIPTION OF THE INVENTION
Next, the present invention will be described in detail with reference to the accompanying drawings.
[0015]
FIG. 1 shows an embodiment of a semiconductor device of the present invention, in which a semiconductor element 6 is accommodated in a semiconductor element accommodation package 7.
[0016]
The semiconductor element housing package 7 is formed of a base 1, a first wiring conductor 2a, a ground wiring conductor 2b, an input / output pad 3a, a ground pad 3b, a second wiring conductor 4 and a connector 5.
[0017]
The substrate 1 is made of an electrically insulating material such as an aluminum oxide sintered body, a mullite sintered body, a glass ceramic, an aluminum nitride sintered body. For example, when the substrate 1 is made of an aluminum oxide sintered body, An appropriate organic solvent, solvent, plasticizer, and dispersing agent are added to and mixed with raw material powders such as silicon, magnesium oxide, and calcium oxide to make a mud, and this mud is made by a conventionally known doctor blade method, calender roll method, etc. A ceramic green sheet (ceramic green sheet) is obtained by forming a sheet by using a sheet forming method, and then appropriately punching the ceramic green sheet and laminating a plurality of sheets as necessary. It is manufactured by firing at a high temperature of 1600 ° C.
[0018]
The base body 1 is formed with a plurality of first wiring conductors 2a and ground wiring conductors 2b from the semiconductor element mounting portion 1a to the lower surface, and the wiring conductors 2a and 2b are connected to the electric signal input / output of the semiconductor element 6, respectively. Each of the electrodes for grounding and grounding acts as a conductive path for connecting to the input / output pad 3a and the grounding pad 3b, and one end on the mounting portion 1a side is for electrical signal input / output of the semiconductor element 6 and grounding Are electrically connected through the bonding wire 8a.
[0019]
The first wiring conductor 2a, the ground wiring conductor 2b, the input / output pad 3a, and the ground pad 3b are made of a metal material such as copper, silver, gold, palladium, tungsten, molybdenum, manganese, and the like. If it exists, it forms by printing the metal paste which adds an organic solvent to copper powder on the surface of the ceramic green sheet used as the base | substrate 1 by a screen printing etc. in a predetermined pattern.
[0020]
One end of the first wiring conductor 2a and the ground wiring conductor 2b on the lower surface side of the base 1 is electrically connected to the corresponding input / output pad 3a and ground pad 3b, respectively. By connecting the ground pad 3b to a predetermined signal or ground circuit conductor of the external electric circuit, the electric signal input / output and ground electrodes of the semiconductor element 6 are electrically connected to the external electric circuit. Is done.
[0021]
The base 1 has a second wiring conductor 4 formed from the semiconductor element mounting portion 1 a to the upper surface, side surface, and the like. The second wiring conductor 4 connects the electrode of the semiconductor element 6 to the wire 5 a of the connector 5. The electrode of the semiconductor element 6 is electrically connected to one end on the mounting portion 1a side via the bonding wire 8b.
[0022]
The second wiring conductor 4 is made of a metal material such as copper, silver, gold, palladium, tungsten, molybdenum, manganese, etc., like the first wiring conductor 2a described above. It is formed by printing a metal paste formed by adding an organic solvent or the like to the powder on the surface of the ceramic green sheet serving as the substrate 1 in a predetermined pattern by screen printing or the like.
[0023]
One end of the second wiring conductor 4 on the outer surface side of the base 1 is electrically connected to the wire 5a of the connector 5, and the connector 5 is connected to an external device such as a communication device via a coaxial cable or the like. High frequency signals are transmitted and received between the semiconductor element 6 and the external device.
[0024]
The connector 5 acts as a connection body for connecting the second wiring conductor 4 of the package 7 for housing a semiconductor element to an external device via a coaxial cable or the like. For example, a metal wire such as iron-nickel-cobalt alloy This is a structure in which the periphery of 5a is surrounded by an insulating envelope 5b such as borosilicate glass.
[0025]
The connector 5 consisting of the wire 5a and the enclosure 5b is set, for example, by setting the wire 5a made of iron-nickel-cobalt alloy in the center of a cylindrical container made of metal such as iron-nickel-cobalt alloy, After the container is filled with glass powder such as borosilicate glass, the glass powder is heated and melted and deposited around the wire 5a.
[0026]
Thus, according to the above-described package for housing a semiconductor element, the semiconductor element 6 is mounted on the mounting portion 1a of the base body 1 and fixed through an adhesive such as glass-epoxy resin or silver-epoxy resin. 6 are connected to the first wiring conductor 2a, the ground wiring conductor 2b, and the second wiring conductor 4 through bonding wires 8a and 8b, and finally the lid 10 is attached to the upper surface of the base 1 with a sealing material. The semiconductor device 11 is formed by sealing the semiconductor element 6 in an airtight manner.
[0027]
In this semiconductor device 11, input / output pads 3a and ground pads 3b on the lower surface of the substrate 1 are connected to predetermined signal or ground circuit conductors of an external electric circuit board via external terminals such as solder bumps. Thus, the signal and ground electrodes of the semiconductor element 6 are electrically connected to an external electric circuit.
[0028]
Further, by connecting an external connection conductor such as a coaxial cable to the wire 5a of the connector 5 attached to the semiconductor device 11, the electrode of the semiconductor element 6 is connected to an external device such as a communication device.
[0029]
The semiconductor device 11 inputs a plurality of low frequency band (5 to 10 GHz) electric signals supplied from an external electric circuit to the semiconductor element 6 through the first wiring conductor 2a, and these are input by the semiconductor element 6. The electric signal is synthesized to produce an electric signal having a high frequency band (40 to 80 GHz) and output to the connector 5 through the second wiring conductor 4, and externally through the wire 5a of the connector 5. An electrical signal transmitted from an external device such as an external communication device or from one external device such as an external communication device (40 to 80 GHz) is transmitted as an electric signal having a high frequency band (40 to 80 GHz). Are input to the semiconductor element 6 through the semiconductor element 6, and an electric signal having a high frequency band (40 to 80 GHz) input by the semiconductor element 6 is converted into a plurality of low frequency bands (5 to 10 GHz). The supplying to the external electrical circuit through the first wiring conductor 2a of these individual frequency band lower electrical signals and converts into an electrical signal.
[0030]
In the semiconductor device of the present invention, as shown in FIG. 2, the portion of the base 1 surrounding the mounting portion 1a in the portion where the second wiring conductor 4 is formed bulges toward the mounting portion 1a. It is important to form the bulging portion 1b and extend the second wiring conductor 4 on the upper surface of the bulging portion 1b.
[0031]
In this manner, a bulging portion 1b that bulges toward the mounting portion 1a is formed at a portion where the second wiring conductor 4 is formed in the frame-shaped portion of the base 1 surrounding the mounting portion 1a. If the second wiring conductor 4 is extended on the upper surface of the protruding portion 1b, a frame-like shape surrounding the side surface of the semiconductor element 6 and the mounting portion 1a of the base 1 when the semiconductor element 6 is bonded and fixed on the mounting portion 1a. Even if a bonding material such as silver-epoxy resin is interposed between the side surface of the portion, the tip of the bulging portion 1b can be brought close to the side surface of the semiconductor element 6, so that it extends to the upper surface of the bulging portion 1b. The distance between the second wiring conductor 4 and the electrode of the semiconductor element 6 can be shortened, and the length of the bonding wire 8b connecting the two can be significantly shortened compared to the conventional 1 mm, As a result, the second wiring conductor 4 and the bonding wire 8b are interposed. When a high-frequency electrical signal of 40 GHz to 80 GHz is transmitted between the connector 5 and the semiconductor element 6, the bonding wire with high impedance is short, so there is almost no large reflection or the like in the signal, and transmission characteristics are excellent. Can be impersonated.
[0032]
In this case, when the distance between the tip of the bulging portion 1b and the side surface of the semiconductor element 6 is set to 0.2 mm or less, the second wiring conductor 4 extended to the upper surface of the bulging portion 1b and the semiconductor element 6 is shortened to 0.2 mm or less, so that the length of the bonding wire 8b connecting them can be surely reduced to 0.3 mm or less, so that the second wiring When a high-frequency electrical signal of 40 GHz to 80 GHz is transmitted between the connector 5 and the semiconductor element 6 via the conductor 4 and the bonding wire 8b, the bonding wire having a high impedance is extremely short, so that the signal is greatly reflected. Occurrence can be prevented more effectively, and the transmission characteristics can be more reliably improved. Accordingly, the distance between the tip of the bulging portion 1b and the side surface of the semiconductor element 6 is preferably set to 0.2 mm or less.
[0033]
The shape of the bulging portion 1b is not limited to the arc shape as shown in FIG. 2, and may be an elliptical arc shape, a square shape, or the like.
[0034]
For example, when the green sheet serving as the base body 1 is punched, the bulged portion 1b is formed with a bulged portion such as an arc at a predetermined position of a frame-shaped portion surrounding the mounting portion 1a. Thus, it can form by processing.
[0035]
Further, if the bulging portion 1b has a tip abutting against and supported by the side surface of the semiconductor element 6, positioning when the semiconductor element 6 is bonded and fixed to the mounting portion 1a becomes easier. It is possible to further facilitate the formation of the semiconductor device in which 6 is fixed at a predetermined position. Therefore, it is even more preferable that the bulging portion 1b bulges toward the mounting portion 1a such that the tip thereof is in contact with the side surface of the semiconductor element 6.
[0036]
Moreover, as shown in FIG. 3, the auxiliary | assistant bulging part 1c which bulges to the mounting part 1a side is provided in the site | part of the both sides of the said bulging part 1b among the frame-shaped parts surrounding the mounting part 1a of the base | substrate 1. As shown in FIG. If formed, the side surface of the semiconductor element 6 can be more reliably supported by the bulging portion 1b and the auxiliary bulging portion 1c, and positioning when the semiconductor element 6 is bonded and fixed to the mounting portion 1a is further facilitated. Thus, the formation of the semiconductor device in which the semiconductor element 6 is fixed at a predetermined position can be made easier and more reliable. Therefore, in the semiconductor device of the present invention, the auxiliary bulge that bulges toward the mounting portion 1a at the both sides of the bulging portion 1b in the frame-like portion surrounding the mounting portion 1a of the base 1 is provided. It is still more preferable to form the part 1c.
[0037]
The connection between the second wiring conductor 4 and the electrode of the semiconductor element 6 through the bonding wire 8b is a wedge bonding method, specifically, a long bonding wire such as a gold wire is used as a wire capillary of a bonding apparatus. And is brought into contact with the electrodes of the second wiring conductor 4 and the semiconductor element 6 through a wedge-shaped portion at the tip of the capillary and pressed by a ultrasonic wave vibration and bonding. After bonding (first bond) The length of the bonding wire 8b is made extremely short, for example, 0.3 mm or less by adjusting the moving angle of the capillary and lowering the loop of the bonding wire, and connected to the second wiring conductor 4 and the electrode of the semiconductor element 6 Is done. In this case, the bonding wire does not need to have a metal ball formed by melting the tip portion in order to be bonded to the second wiring conductor 4 or the like, for example, as in the ball bond method, and the loop height depends on the moving angle of the capillary. Therefore, the length of the bonding wire 8b can be assuredly as short as 0.3 mm or less, for example.
[0038]
The present invention is not limited to the above-described embodiments, and various modifications can be made without departing from the gist of the present invention.
[0039]
【The invention's effect】
According to the semiconductor device of the present invention, a bulging portion that bulges toward the mounting portion is formed at a portion where the second wiring conductor is formed in the frame-shaped portion surrounding the mounting portion on which the semiconductor element is mounted. Since the second wiring conductor is extended on the upper surface of the bulging portion, even if a bonding material is interposed between the side surface of the semiconductor element and the side surface of the frame-shaped portion surrounding the mounting portion of the base body, Since the leading end of the protruding portion can be brought close to the side surface of the semiconductor element, for example, so that the distance between them is 0.2 mm or less, the second wiring conductor and the semiconductor element extended to the upper surface of the protruding portion The distance between the two electrodes can be shortened, and the length of the bonding wire connecting the two can be made significantly shorter than before, and between the connector and the semiconductor element via the second wiring conductor and the bonding wire. Of high frequency of 40 GHz to 80 GHz If allowed to transmit the electrical signal, seldom causing significant reflection or the like on a signal from the impedance is high bonding wires short, can be made with excellent transmission characteristics.
[Brief description of the drawings]
FIG. 1 is a cross-sectional view showing an embodiment of a semiconductor device of the present invention.
2 is an enlarged top view of the main part of the semiconductor device shown in FIG. 1;
FIG. 3 is an enlarged top view of a main part showing another embodiment of the semiconductor device of the present invention.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 ... Base 1a ... Mounting part 1b ... Bulging part 1c ... Auxiliary bulging part 2a ... 1st wiring conductor 2b ...・ Ground wiring conductor 3a... I / O pad 3b... Ground pad 4 ....... Second wiring conductor 5 ..Connector 5a. ... Enclosure 6 ... Semiconductor element 7 ... Semiconductor element storage package 8a, 8b ... Bond wire 10 ... Cover 11 ... Semiconductor device

Claims (2)

半導体素子が搭載される搭載部を有する基体と、該基体の前記搭載部より下面にかけて導出されている複数個のグランド配線導体および第１配線導体と、前記基体の下面に形成され、前記グランド配線導体および第１配線導体に電気的に接続している複数個のグランド用パッドおよび入出力用パッドと、前記基体の搭載部より上面もしくは側面にかけて導出されている第２配線導体と、前記基体における前記第２配線導体が形成された面と側面との間の角部に形成された切欠きに嵌め込まれるように取着され、前記第２配線導体に電気的に接続されているコネクターとから成る半導体素子収納用パッケージと、４０ＧＨｚ乃至８０ＧＨｚの電気信号を送受信する半導体素子とで構成され、前記半導体素子収納用パッケージの搭載部に半導体素子を搭載固定するとともに該半導体素子の各電極をグランド配線導体、第１配線導体、第２配線導体にボンディングワイヤを介し電気的に接続して成る半導体装置であって、前記基体は、前記搭載部を取り囲む枠状の部分のうち前記第２配線導体が形成されている部位において前記搭載部側に膨出する膨出部が形成されており、該膨出部の上面に前記第２配線導体が延出されていることを特徴とする半導体装置。A base body having a mounting portion on which a semiconductor element is mounted; a plurality of ground wiring conductors and first wiring conductors led out from the mounting portion of the base body to a lower surface; and the ground wiring formed on the lower surface of the base body. A plurality of ground pads and input / output pads electrically connected to the conductor and the first wiring conductor; a second wiring conductor led out from an upper surface or a side surface of the mounting portion of the base ; A connector that is attached so as to be fitted into a notch formed at a corner between the side surface on which the second wiring conductor is formed and is electrically connected to the second wiring conductor; A semiconductor element storage package and a semiconductor element that transmits and receives electrical signals of 40 GHz to 80 GHz, and a semiconductor element is mounted on the mounting portion of the semiconductor element storage package Is mounted and fixed, and each electrode of the semiconductor element is electrically connected to the ground wiring conductor, the first wiring conductor, and the second wiring conductor via bonding wires, and the base includes the mounting portion A bulging portion that bulges toward the mounting portion is formed at a portion of the frame-shaped portion that surrounds the second wiring conductor, and the second wiring conductor is formed on the upper surface of the bulging portion. A semiconductor device which is extended. 前記膨出部の先端と前記半導体素子の側面とが当接していることを特徴とする請求項１記載の半導体装置。The semiconductor device according to claim 1, wherein a tip of the bulging portion is in contact with a side surface of the semiconductor element.
JP2003076338A 2003-03-19 2003-03-19 Semiconductor device Expired - Fee Related JP3811459B2 (en)

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