JP3847250B2 - Mounting structure of semiconductor device - Google Patents

Mounting structure of semiconductor device Download PDF

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Publication number
JP3847250B2
JP3847250B2 JP2002339919A JP2002339919A JP3847250B2 JP 3847250 B2 JP3847250 B2 JP 3847250B2 JP 2002339919 A JP2002339919 A JP 2002339919A JP 2002339919 A JP2002339919 A JP 2002339919A JP 3847250 B2 JP3847250 B2 JP 3847250B2
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semiconductor element
input
wiring conductor
semiconductor device
electric circuit
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JP2004179178A (en
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伸 松田
哲生 平川
義信 澤
久義 和田
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Kyocera Corp
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Kyocera Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance

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  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Wire Bonding (AREA)

Description

【０００１】
【発明の属する技術分野】
本発明は高周波の電気信号を送受信する半導体素子を半導体素子収納用パッケージ内に気密に収容して成る半導体装置の外部電気回路基板への実装構造に関するものである。
【０００２】
【従来の技術】
近年、光通信や無線通信等の機器には多数の半導体装置が使用されており、かかる半導体装置は一般に、高周波の電気信号を送受信する半導体素子を半導体素子収納用パッケージ内に気密に収容することによって形成されている。
【０００３】
前記半導体素子収納用パッケージは、通常、酸化アルミニウム質焼結体、ムライト質焼結体、窒化アルミニウム質焼結体等の電気絶縁材料から成り、上面に半導体素子の搭載部が形成された基体と、タングステン、モリブデン、マンガン等の金属材料から成り、基体の半導体素子搭載部から下面にかけて被着導出された複数の入出力用配線導体（第１配線導体）およびグランド用配線導体と、この配線導体と電気的に接続するようにして基体の下面に形成された複数個のグランド用パッドおよび入出力用パッドと、基体の搭載部より上面もしくは側面にかけて導出されている出入力用配線導体（第２配線導体）と、この出入力用配線導体（第２配線導体）に一端が接続されるとともに他端が外部に導出されているコネクターとにより構成されている。
【０００４】
そして、かかる半導体素子収納用パッケージには、その搭載部に電気信号を送受信する半導体素子がＡｕ−Ｓｎろう材あるいは半田等の接合材を介して接着固定されるとともに、半導体素子の各電極が入出力用配線導体（第１配線導体）、グランド配線導体および出入力用配線導体（第２配線導体）にボンディングワイヤを介して接続され、その後、必要に応じて蓋体等で半導体素子を封止することによって半導体装置となる。
【０００５】
また前記半導体装置は基体の下面に形成されているグランド用パッドおよび入出力用パッドを外部電気回路基板の回路導体に半田バンプ等を介し接続させることによって、半導体装置は外部電気回路基板上に実装されるとともに内部に収容する半導体素子が外部電気回路に接続され、同時にコネクターに同軸ケーブル等を介し外部の通信装置等の外部機器を接続させることによって半導体素子と外部機器とが接続するようになっている。
【０００６】
なお、前記半導体装置に使用されている半導体素子は複数の電気信号を合成して一つの電気信号に変換する、或いは一つの電気信号を分離して複数の電気信号に変換する機能を有しており、外部電気回路から入出力用パッド及び第１配線導体を介して入力される５〜１０ＧＨｚの複数の電気信号は半導体素子で合成されて４０〜８０ＧＨｚの一つの周波数帯域が高い電気信号となり、この４０〜８０ＧＨｚの電気信号は第２配線導体を介してコネクターに伝送されるとともにコネクターより外部の通信装置等の外部機器に伝送され、またコネクターを介して外部機器より伝送された４０〜８０ＧＨｚの電気信号は半導体素子で５〜１０ＧＨｚの複数の電気信号に変換され、各々の５〜１０ＧＨｚの電気信号は第１配線導体及び入出力用パッドを介して外部電気回路に伝送されることとなる。
【０００７】
また前記酸化アルミニウム質焼結体やムライト質焼結体等から成る基体はその線膨張係数が４×１０-6／℃〜７．５×１０-6／℃であるのに対し、外部電気回路基板は一般にガラスエポキシ樹脂材で形成されており、その線膨張係数は約１５×１０−６／℃程度であり、大きく相違することから外部電気回路基板の回路導体に入出力用パッドを半田バンプ等を介して接続した後、基体と外部電気回路基板に熱が作用すると基体と外部電気回路基板の熱膨張量の相違に起因して大きな応力が発生しこの応力によって入出力用パッドが基体から剥離したり、半田バンプに破断が発生して半導体素子と外部電気回路との間の接続が破られてしまう。そのためこの従来の半導体素子収納用パッケージ等は入出力用パッドを直径が１ｍｍ以上の円形形状（平面積が０．７８５ｍｍ2以上の円形形状）とし基体と入出力用パッドとの接合強度を強くするとともに外部電気回路基板の回路導体と入出力用パッドとを接続する半田バンプ等の量を多くし破断が発生しないようにしている。
【０００８】
【特許文献１】
特開２００１−７７５２７号公報
【０００９】
【発明が解決しようとする課題】
しかしながら、この従来の半導体装置においては、第１配線導体と外部電気回路基板の回路導体とを接続する入出力用パッドが直径１ｍｍ以上の円形形状（平面積が０．７８５ｍｍ2以上の円形形状）をなし、第１配線導体の外形寸法（直径が約０．３ｍｍ以上、平面積で約０．０７ｍｍ2以上の円形形状等）に比し約１０倍大きく、入出力用パッドのインピーダンスが第１配線導体や外部電気回路基板の回路導体に比べ低いものとなっている。そのためこの入出力用パッドを介して第１配線導体と外部電気回路基板の回路導体とを接続するとともに５〜１０ＧＨｚの電気信号を伝送させた場合、５〜１０ＧＨｚの電気信号は高周波信号であるためインピーダンスが低い入出力用パッドで反射等を起こし、伝送特性が大きく劣化してしまうという欠点を有していた。
【００１０】
本発明は上記欠点に鑑み案出されたもので、その目的は半導体装置の入出力用パッドでの高周波の電気信号を反射等を有効に防止し、外部電気回路と半導体素子とを接続する入出力用パッドでの電気信号の伝送特性を大きく改善するとともに入出力用パッドと外部電気回路との接続信頼性を高めた半導体装置の実装構造を提供することにある。
【００１１】
【課題を解決するための手段】
本発明の半導体素子収納用パッケージは、４０ＧＨｚ〜８０ＧＨｚの電気信号を送受信する半導体素子が搭載される搭載部を有する基体と、該基体の前記搭載部より下面にかけて導出されている複数個のグランド配線導体および第１配線導体と、前記基体の下面に形成され、前記グランド配線導体および第１配線導体に電気的に接続している複数個のグランド用パッドおよび入出力用パッドと、前記基体の搭載部より上面もしくは側面にかけて導出されている第２配線導体と、導電性の線材と絶縁性の外囲体とから成り、線材が前記第２配線導体に電気的に接続され、前記基体における前記第２配線導体が形成された面と側面との間の切り欠きに一部が収容されたコネクターとで形成され、前記コネクターは、下面が前記基体に取着されるとともに、該下面に対向する上面が外部に露出するように前記切り欠きに収容され、前記入出力用パッドの平面積が０．１９６ｍｍ２以下であることを特徴とするものである。また、本発明の半導体装置は、前記半導体素子収納用パッケージと４０ＧＨｚ〜８０ＧＨｚの電気信号を送受信する半導体素子とから成り、前記パッケージの搭載部に半導体素子を搭載固定するとともに該半導体素子の各電極を第１配線導体および第２配線導体に電気的に接続したことを特徴とするものである。
【００１２】
本発明の半導体装置の実装構造によれば半導体素子を外部電気回路基板の回路導体に接続する入出力用パッドの平面積を０．１９６ｍｍ2以下とし、入出力用パッドのインピーダンスを半導体素子と入出力用パッドとを接続する第１配線導体や外部電気回路基板の回路導体のインピーダンスに近似させたことから入出力用パッドを介して第１配線導体と外部電気回路基板の回路導体とを接続するとともに５〜１０ＧＨｚの高周波の電気信号を伝送させたとしても入出力用パッドで大きな反射等を起こすことはなく、伝送特性を優れたものとなすことができる。
【００１３】
また本発明の半導体装置の実装構造によれば、半導体装置と外部電気回路基板との間に樹脂充填材を充填し、該樹脂充填材により半導体装置を外部電気回路基板上に固定したことから、入出力用パッドが０．１９６ｍｍ2以下と小さく入出力用パッドの基体への接合の強度が弱いこと、基体と外部電気回路基板の線膨張係数が大きく相違すること等に起因して入出力用パッドが基体より剥離したり、入出力用パッドに接合する半田バンプに破断が発生しようとしたりするが、これらは前記樹脂充填材による半導体装置と外部電気回路基板との固定により有効に防止され、その結果、入出力用パッドを介して半導体素子と外部電気回路基板の回路導体とを確実強固に接続することが可能となる。
【００１４】
【発明の実施の形態】
次に、本発明を添付図面に基づき詳細に説明する。
図１は本発明の半導体装置の実装構造の一実施例を示し、半導体素子収納用パッケージ７内に半導体素子６を収容した半導体装置１１が外部電気回路基板１２上に実装される。
【００１５】
前記半導体素子収納用パッケージ７は、基体１、第１配線導体２ａ、グランド配線導体２ｂ、入出力用パッド３ａ、グランド用パッド３ｂ、第２配線導体４およびコネクター５により形成されている。
【００１６】
前記基体１は酸化アルミニウム質焼結体、ムライト質焼結体、ガラスセラミックス、窒化アルミニウム質焼結体等の電気絶縁材料から成り、例えば、酸化アルミニウム質焼結体から成る場合、酸化アルミニウム、酸化ケイ素、酸化マグネシウム、酸化カルシウム等の原料粉末に適当な有機溶剤、溶媒、可塑剤、分散剤を添加混合して泥漿物を作り、この泥漿物を従来周知のドクターブレード法やカレンダーロール法等のシート形成法を採用しシート状に形成してセラミックグリーンシート（セラミック生シート）を得、しかる後、それらセラミックグリーンシートに適当な打ち抜き加工を施すとともにこれを必要に応じて複数枚積層し、約１６００℃の高温で焼成することによって製作される。
【００１７】
また前記基体１は、半導体素子の搭載部１ａから下面にかけて複数個の第１配線導体２ａおよびグランド配線導体２ｂが形成されており、該各配線導体２ａ、２ｂは半導体素子の電気信号入出力用、接地用の各電極を、入出力用パッド３ａやグランド用パッド３ｂに接続するための導電路として作用し、搭載部１ａ側の一端には半導体素子６の電気信号入出力用、接地用の各電極が導電性接続材を介して電気的に接続される。
【００１８】
前記第１配線導体２ａおよびグランド配線導体２ｂ、入出力用パッド３ａおよびグランド用パッド３ｂは、銅、銀、金、パラジウム、タングステン、モリブデン、マンガン等の金属材料から成り、例えば銅から成る場合であれば、銅粉末に有機溶剤を添加して成る金属ペーストを基体１となるセラミックグリーンシートの表面にスクリーン印刷等により所定パターンに印刷しておくことによって形成される。
【００１９】
この第１配線導体２ａおよびグランド配線導体２ｂの基体１下面側の一端は、それぞれ対応する入出力用パッド３ａおよびグランド用パッド３ｂと電気的に接続しており、これらの入出力用パッド３ａ、グランド用パッド３ｂを外部電気回路基板１２の所定の信号用や接地用等の回路導体１３に半田バンプ等により接続することによって、半導体素子６の電気信号入出力用、接地用の各電極が外部電気回路と電気的に接続される。
【００２０】
また前記基体１は、半導体素子の搭載部１ａから上面や側面等にかけて第２配線導体４が形成されており、該第２配線導体４は半導体素子６の電極をコネクター５の線材５ａに接続するための導電路として作用し、搭載部１ａ側の一端には半導体素子６の電極がボンディングワイヤ８を介して電気的に接続される。
【００２１】
前記第２配線導体４は、上述の第１配線導体２ａ等と同様に、銅、銀、金、パラジウム、タングステン、モリブデン、マンガン等の金属材料から成り、例えば銅から成る場合であれば、銅粉末に有機溶剤等を添加して成る金属ペーストを基体１となるセラミックグリーンシートの表面にスクリーン印刷等により所定パターンに印刷しておくことによって形成される。
【００２２】
この第２配線導体４の基体１外表面側の一端はコネクター５の線材５ａと電気的に接続しており、このコネクター５を同軸ケーブル等を介して通信装置等の外部機器に接続することにより半導体素子６と外部機器との間で高周波信号の送受信が行われる。
【００２３】
前記コネクター５は、半導体素子収納用パッケージ７の第２配線導体４を同軸ケーブル等を介して外部機器に接続するための接続体として作用し、例えば、鉄−ニッケル−コバルト合金等の金属の線材５ａの周囲を、ホウ珪酸系ガラス等の絶縁性の外囲体５ｂで取り囲んだ構造である。
【００２４】
前記線材５ａと外囲体５ｂとから成るコネクター５は、例えば、鉄−ニッケル−コバルト合金から成る線材５ａを、鉄−ニッケル−コバルト合金等の金属から成る円筒状の容器の中央にセットし、容器内にホウ珪酸ガラス等のガラス粉末を充填した後、ガラス粉末を加熱溶融させて線材５ａの周囲に被着させることによって製作される。
【００２５】
かくして上述の半導体素子収納用パッケージ７によれば、基体１の搭載部１ａに半導体素子６を搭載するとともにガラス、樹脂、ロウ材等の接着材を介して固定し、しかる後、半導体素子６の各電極を第１配線導体２ａおよびグランド配線導体２ｂに、例えば、ボンディングワイヤ８を介して接続し、最後に蓋体１０を基体１の上面に封止材を介して接合させ、半導体素子６を気密に封入することによって半導体装置１１となる。
【００２６】
この半導体装置１１は基体１下面の入出力用パッド３ａおよびグランド用パッド３ｂが外部電気回路基板１２の所定の信号用や接地用等の回路導体１３に半田バンプ１４等の外部端子を介し接続させることによって半導体装置１１は外部電気回路基板１２上に実装されるとともに半導体素子６の信号用、接地用の各電極は外部電気回路と電気的に接続される。
【００２７】
また、この半導体装置１１に取着されているコネクター５の線材５ａに同軸ケーブル等の外部接続用の導線を接続することにより、半導体素子６の電極が通信装置等の外部機器に接続される。
【００２８】
そしてかかる半導体装置１１は、外部電気回路から供給される複数の周波数帯域が低い（５〜１０ＧＨｚ）電気信号を第１配線導体２ａを介して半導体素子６に入力させ、半導体素子６でこれら入力された電気信号を合成して、一つの周波数帯域が高い（４０〜８０ＧＨｚ）電気信号とするとともにこれを第２配線導体４を介してコネクター５に出力し、該コネクター５の線材５ａを介して外部の通信装置等の外部機器に伝送する、或いは、外部の通信装置等の外部機器から伝送された一つの周波数帯域が高い（４０〜８０ＧＨｚ）電気信号をコネクター５の線材５ａ及び第２配線導体４を介して半導体素子６に入力し、半導体素子６で入力された周波数帯域が高い（４０〜８０ＧＨｚ）電気信号を複数の周波数帯域が低い（５〜１０ＧＨｚ）電気信号に変換するとともにこれらの個々の周波数帯域が低い電気信号を第１配線導体２ａを介して外部電気回路に供給することとなる。
【００２９】
本発明の半導体装置の実装構造においては、半導体素子６を外部電気回路基板１２の回路導体１３に接続する入出力用パッド３ａの平面積を０．１９６ｍｍ2以下としておくことが重要である。
【００３０】
前記入出力用パッド３ａの平面積を０．１９６ｍｍ2以下としておくと入出力用パッド３ａのインピーダンスが半導体素子６と入出力用パッド３ａとを接続する第１配線導体２ａと外部電気回路基板１２の回路導体１３等のインピーダンスに近似し、その結果、入出力用パッド３ａを介して第１配線導体２ａと外部電気回路基板１２の回路導体１３とを接続するとともに５〜１０ＧＨｚの高周波の電気信号を伝送させたとしても入出力用パッド３ａで大きな反射等を起こすことはなく、伝送特性が極めて優れたものとなすことができる。
【００３１】
なお、前記入出力用パッド３ａはその平面積が０．１９６ｍｍ2を超えると第１配線導体２ａと外部電気回路基板１２の回路導体１３とを入出力用パッド３ａを介して接続した後、５〜１０ＧＨｚの高周波の電気信号が伝送された場合、入出力用パッド３ａで電気信号に反射が発生し伝送特性が大きく劣化してしまう。従って、前記入出力用パッド３ａはその平面積が０．１９６ｍｍ2以下のものに特定される。
【００３２】
また前記入出力用パッド３ａの平面積を０．１９６ｍｍ2以下にする方法としては、金属ペーストを基体１となるグリーンシートに印刷しておくことによって入出力用パッド３ａを形成する際、スクリーン印刷におけるスクリーンマスクの開口を０．１９６ｍｍ2以下としておくことによって行われる。
【００３３】
また本発明の半導体装置の実装構造においては、半導体装置１１と外部電気回路基板１２との間に樹脂充填材１５を充填しておくことが重要である。
【００３４】
前記半導体装置１１と外部電気回路基板１２との間に樹脂充填材１５を充填すると、該樹脂充填材１５が半導体装置１１を外部電気回路基板１２上に強固に固定し、これによって入出力用パッド３ａが０．１９６ｍｍ2以下と小さく入出力用パッド３ａの基体１への接合強度が弱いこと、基体１と外部電気回路基板１２の線膨張係数が大きく相違すること等に起因して入出力用パッド３ａが基体１より剥離したり、入出力用パッド３ａに接合する半田バンプ１４に破断が発生しようとしてもこれらは前記樹脂充填材１５による半導体装置１１と外部電気回路基板１２との固定により有効に防止され、その結果、入出力用パッド３ａを介して半導体素子６と外部電気回路基板１２の回路導体１３とを確実強固に接続することが可能となる。
【００３５】
前記樹脂充填材１５はエポキシ樹脂やシリコーン樹脂等の有機樹脂から成り、半導体装置１１の入出力用パッド３ａを外部電気回路基板１２の回路導体１３に半田バンプ１４等を介して接続した後、半導体装置１１と外部電気回路基板１２との間に形成される間隙内に液状の未硬化のエポキシ樹脂を注入し、これを熱硬化させることによって形成される。
【００３６】
なお、本発明は上述の実施例に限定されるものではなく、本発明の要旨を逸脱しない範囲であれば種々の変更は可能である。
【００３７】
例えば、前記樹脂充填材１５は、半田バンプ１４の周囲で高弾性として半田バンプ１４による半導体装置１１と外部電気回路基板１２との機械的接続を補強するとともに、その外側で低弾性として半導体装置１１と外部電気回路基板１２との間に発生する熱応力を吸収緩和させるようにし、接続の信頼性をより一層高めるようにしてもよい。
【００３８】
【発明の効果】
本発明の半導体素子収納用パッケージおよび半導体装置によれば、第１配線導体を外部電気回路基板の回路導体に接続する入出力用パッドの平面積を０．１９６ｍｍ ２ 以下とし、入出力用パッドのインピーダンスを第１配線導体や外部電気回路基板の回路導体のインピーダンスに近似させたことから入出力用パッドを介して第１配線導体と外部電気回路基板の回路導体とを接続するとともに５〜１０ＧＨｚの高周波の電気信号を伝送させたとしても入出力用パッドで大きな反射等を起こすことはなく、伝送特性を優れたものとなすことができる。
【００３９】
また本発明の半導体装置の実装構造によれば、半導体装置と外部電気回路基板との間に樹脂充填材を充填し、該樹脂充填材により半導体装置を外部電気回路基板上に固定したことから、入出力用パッドが０．１９６ｍｍ2以下と小さく入出力用パッドの基体への接合の強度が弱いこと、基体と外部電気回路基板の線膨張係数が大きく相違すること等に起因して入出力用パッドが基体より剥離したり、入出力用パッドに接合する半田バンプに破断が発生しようとしたりするが、これらは前記樹脂充填材による半導体装置と外部電気回路基板との固定により有効に防止され、その結果、入出力用パッドを介して半導体素子と外部電気回路基板の回路導体とを確実強固に接続することが可能となる。
【図面の簡単な説明】
【図１】本発明の半導体装置の実装構造の一実施例を示す断面図である。
【符号の説明】
１・・・・・・基体
１ａ・・・・・搭載部
２ａ・・・・・第１配線導体
２ｂ・・・・・グランド配線導体
３ａ・・・・・入出力用パッド
３ｂ・・・・・グランド用パッド
４・・・・・・第２配線導体
５・・・・・・コネクター
５ａ・・・・・線材
５ｂ・・・・・外囲体
６・・・・・・半導体素子
７・・・・・・半導体素子収納用パッケージ
８・・・・・・ボンディングワイヤ
１０・・・・・蓋体
１１・・・・・半導体装置
１２・・・・・外部電気回路基板
１３・・・・・回路導体
１４・・・・・半田バンプ
１５・・・・・樹脂充填材[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a structure for mounting a semiconductor device on an external electric circuit board in which a semiconductor element for transmitting and receiving a high-frequency electric signal is hermetically accommodated in a package for housing a semiconductor element.
[0002]
[Prior art]
In recent years, a large number of semiconductor devices are used in devices such as optical communication and wireless communication, and such semiconductor devices generally contain a semiconductor element that transmits and receives high-frequency electrical signals in a package for housing a semiconductor element. Is formed by.
[0003]
The package for housing a semiconductor element is usually made of an electrically insulating material such as an aluminum oxide sintered body, a mullite sintered body, an aluminum nitride sintered body, and a base body on which a semiconductor element mounting portion is formed. A plurality of input / output wiring conductors (first wiring conductors) and ground wiring conductors, which are made of a metal material such as tungsten, molybdenum, manganese, etc. A plurality of ground pads and input / output pads formed on the lower surface of the base so as to be electrically connected to the base, and an input / output wiring conductor (second wiring) led out from the mounting portion of the base to the upper surface or the side surface. Wiring conductor) and a connector having one end connected to the input / output wiring conductor (second wiring conductor) and the other end led to the outside. There.
[0004]
In such a package for housing a semiconductor element, a semiconductor element that transmits and receives electrical signals is bonded and fixed to the mounting portion via a bonding material such as an Au-Sn brazing material or solder, and each electrode of the semiconductor element is inserted. Connected to the output wiring conductor (first wiring conductor), the ground wiring conductor, and the input / output wiring conductor (second wiring conductor) via bonding wires, and then the semiconductor element is sealed with a lid or the like as necessary. As a result, a semiconductor device is obtained.
[0005]
The semiconductor device is mounted on the external electric circuit board by connecting the ground pads and the input / output pads formed on the lower surface of the base to the circuit conductors of the external electric circuit board via solder bumps. At the same time, the semiconductor element housed inside is connected to an external electric circuit, and at the same time, an external device such as an external communication device is connected to the connector via a coaxial cable or the like, so that the semiconductor element and the external device are connected. ing.
[0006]
The semiconductor element used in the semiconductor device has a function of synthesizing and converting a plurality of electric signals into one electric signal, or separating one electric signal into a plurality of electric signals. A plurality of electrical signals of 5 to 10 GHz input from the external electrical circuit through the input / output pads and the first wiring conductors are synthesized by a semiconductor element to become an electrical signal having a high frequency band of 40 to 80 GHz, The 40 to 80 GHz electrical signal is transmitted to the connector via the second wiring conductor, transmitted from the connector to an external device such as an external communication device, and transmitted from the external device to the 40 to 80 GHz via the connector. The electrical signal is converted into a plurality of electrical signals of 5 to 10 GHz by a semiconductor element, and each electrical signal of 5 to 10 GHz is a first wiring conductor and an input / output pad. And thus transmitted to the external electric circuit through.
[0007]
To Also said substrate consisting of sintered aluminum oxide and mullite sintered body such that the linear expansion coefficient of 4 × 10 -6 /℃~7.5×10 -6 / ℃ , external electric circuit The substrate is generally made of a glass epoxy resin material, and its linear expansion coefficient is about 15 × 10 −6 / ° C., which is largely different, so input / output pads are solder bumps on the circuit conductor of the external electric circuit substrate. When the heat acts on the base body and the external electric circuit board after the connection is made through the above, a large stress is generated due to the difference in thermal expansion between the base body and the external electric circuit board. The connection between the semiconductor element and the external electric circuit is broken due to peeling or breakage of the solder bump. For this reason, in this conventional package for housing semiconductor elements, the input / output pads have a circular shape with a diameter of 1 mm or more (a circular shape with a flat area of 0.785 mm 2 or more), and the bonding strength between the substrate and the input / output pads is increased. At the same time, the amount of solder bumps connecting the circuit conductors of the external electric circuit board and the input / output pads is increased to prevent breakage.
[0008]
[Patent Document 1]
Japanese Patent Laid-Open No. 2001-77527
[Problems to be solved by the invention]
However, in this conventional semiconductor device, the input / output pad for connecting the first wiring conductor and the circuit conductor of the external electric circuit board has a circular shape with a diameter of 1 mm or more (circular shape with a flat area of 0.785 mm 2 or more). It is about 10 times larger than the external dimensions of the first wiring conductor (circular shape with a diameter of about 0.3 mm or more and a flat area of about 0.07 mm 2 or more), and the impedance of the input / output pad is the first. It is lower than the wiring conductor and the circuit conductor of the external electric circuit board. For this reason, when the first wiring conductor and the circuit conductor of the external electric circuit board are connected via the input / output pad and an electric signal of 5 to 10 GHz is transmitted, the electric signal of 5 to 10 GHz is a high-frequency signal. The input / output pads with low impedance cause reflection and the like, and have the disadvantage that transmission characteristics are greatly deteriorated.
[0010]
The present invention has been devised in view of the above disadvantages, and its purpose is to effectively prevent reflection of high-frequency electric signals at input / output pads of a semiconductor device, and to connect an external electric circuit and a semiconductor element. An object of the present invention is to provide a mounting structure of a semiconductor device that greatly improves the transmission characteristics of an electric signal at an output pad and has improved connection reliability between an input / output pad and an external electric circuit.
[0011]
[Means for Solving the Problems]
A package for housing a semiconductor element according to the present invention includes a base having a mounting portion on which a semiconductor element that transmits and receives an electrical signal of 40 GHz to 80 GHz is mounted, and a plurality of ground wirings extending from the mounting portion to the lower surface of the base A plurality of ground pads and input / output pads formed on a lower surface of the base body and electrically connected to the ground wiring conductor and the first wiring conductor; and mounting the base body A second wiring conductor led out from the top surface to the side surface, a conductive wire and an insulating envelope, the wire being electrically connected to the second wiring conductor, and is formed by a connector part is accommodated in the notch between the second wiring conductor is formed the surface and the side surface, the connector, when the lower surface is attached to said substrate Moni, upper surface facing the lower surface is housed in away the cut so as to be exposed to the outside, the plane area of the input-output pad is characterized in that it 0.196Mm 2 or less. The semiconductor device according to the present invention includes the semiconductor element storage package and a semiconductor element that transmits and receives an electrical signal of 40 GHz to 80 GHz. The semiconductor element is mounted and fixed on the mounting portion of the package and each electrode of the semiconductor element is mounted. Is electrically connected to the first wiring conductor and the second wiring conductor.
[0012]
According to the mounting structure of the semiconductor device of the present invention, the plane area of the input / output pad for connecting the semiconductor element to the circuit conductor of the external electric circuit board is 0.196 mm 2 or less, and the impedance of the input / output pad is inserted between the semiconductor element and the semiconductor element. Since the impedance of the first wiring conductor connecting the output pad and the circuit conductor of the external electric circuit board is approximated, the first wiring conductor and the circuit conductor of the external electric circuit board are connected via the input / output pad. In addition, even if a high-frequency electrical signal of 5 to 10 GHz is transmitted, the input / output pad does not cause a large reflection or the like, and the transmission characteristics can be improved.
[0013]
Further, according to the mounting structure of the semiconductor device of the present invention, the resin filler is filled between the semiconductor device and the external electric circuit board, and the semiconductor device is fixed on the external electric circuit board by the resin filler. The input / output pads are as small as 0.196 mm 2 or less, and the strength of bonding of the input / output pads to the substrate is weak, and the linear expansion coefficient of the substrate and the external electric circuit board are greatly different. The pads are peeled off from the base body or the solder bumps joined to the input / output pads are about to break, but these are effectively prevented by fixing the semiconductor device and the external electric circuit board with the resin filler, As a result, the semiconductor element and the circuit conductor of the external electric circuit board can be securely and securely connected via the input / output pads.
[0014]
DETAILED DESCRIPTION OF THE INVENTION
Next, the present invention will be described in detail with reference to the accompanying drawings.
FIG. 1 shows an embodiment of a semiconductor device mounting structure according to the present invention. A semiconductor device 11 in which a semiconductor element 6 is housed in a semiconductor element housing package 7 is mounted on an external electric circuit board 12.
[0015]
The semiconductor element housing package 7 is formed of a base 1, a first wiring conductor 2a, a ground wiring conductor 2b, an input / output pad 3a, a ground pad 3b, a second wiring conductor 4 and a connector 5.
[0016]
The substrate 1 is made of an electrically insulating material such as an aluminum oxide sintered body, a mullite sintered body, a glass ceramic, an aluminum nitride sintered body. For example, when the substrate 1 is made of an aluminum oxide sintered body, An appropriate organic solvent, solvent, plasticizer, and dispersing agent are added to and mixed with raw material powders such as silicon, magnesium oxide, and calcium oxide to make a mud, and this mud is made by a conventionally known doctor blade method, calender roll method, etc. A ceramic green sheet (ceramic green sheet) is obtained by forming a sheet by using a sheet forming method, and then appropriately punching the ceramic green sheet and laminating a plurality of sheets as necessary. It is manufactured by firing at a high temperature of 1600 ° C.
[0017]
The base 1 is formed with a plurality of first wiring conductors 2a and ground wiring conductors 2b from the semiconductor element mounting portion 1a to the lower surface, and the wiring conductors 2a and 2b are used for inputting and outputting electric signals of the semiconductor elements. The grounding electrode functions as a conductive path for connecting to the input / output pad 3a and the grounding pad 3b. One end on the mounting portion 1a side is used for input / output of electric signals of the semiconductor element 6 and for grounding. Each electrode is electrically connected through a conductive connecting material.
[0018]
The first wiring conductor 2a, the ground wiring conductor 2b, the input / output pad 3a, and the ground pad 3b are made of a metal material such as copper, silver, gold, palladium, tungsten, molybdenum, manganese, and the like. If it exists, it forms by printing the metal paste which adds an organic solvent to copper powder on the surface of the ceramic green sheet used as the base | substrate 1 by a screen printing etc. in a predetermined pattern.
[0019]
One end of the first wiring conductor 2a and the ground wiring conductor 2b on the lower surface side of the base 1 is electrically connected to the corresponding input / output pad 3a and ground pad 3b, respectively. By connecting the ground pad 3b to a predetermined signal or ground circuit conductor 13 of the external electric circuit board 12 by solder bumps or the like, the respective electrodes for electric signal input / output and ground of the semiconductor element 6 are externally connected. It is electrically connected to the electric circuit.
[0020]
The base 1 has a second wiring conductor 4 formed from the semiconductor element mounting portion 1 a to the upper surface, side surface, and the like. The second wiring conductor 4 connects the electrode of the semiconductor element 6 to the wire 5 a of the connector 5. The electrode of the semiconductor element 6 is electrically connected to one end on the mounting portion 1a side via the bonding wire 8.
[0021]
The second wiring conductor 4 is made of a metal material such as copper, silver, gold, palladium, tungsten, molybdenum, manganese, etc., like the first wiring conductor 2a described above. It is formed by printing a metal paste formed by adding an organic solvent or the like to the powder on the surface of the ceramic green sheet serving as the substrate 1 in a predetermined pattern by screen printing or the like.
[0022]
One end of the second wiring conductor 4 on the outer surface side of the base 1 is electrically connected to the wire 5a of the connector 5, and the connector 5 is connected to an external device such as a communication device via a coaxial cable or the like. High frequency signals are transmitted and received between the semiconductor element 6 and the external device.
[0023]
The connector 5 acts as a connection body for connecting the second wiring conductor 4 of the package 7 for housing a semiconductor element to an external device via a coaxial cable or the like. For example, a metal wire such as iron-nickel-cobalt alloy This is a structure in which the periphery of 5a is surrounded by an insulating envelope 5b such as borosilicate glass.
[0024]
The connector 5 consisting of the wire 5a and the enclosure 5b is set, for example, by setting the wire 5a made of iron-nickel-cobalt alloy in the center of a cylindrical container made of metal such as iron-nickel-cobalt alloy, After the container is filled with glass powder such as borosilicate glass, the glass powder is heated and melted and deposited around the wire 5a.
[0025]
Thus, according to the semiconductor element storage package 7 described above, the semiconductor element 6 is mounted on the mounting portion 1a of the base 1 and fixed through an adhesive such as glass, resin, brazing material, and then the semiconductor element 6 is mounted. Each electrode is connected to the first wiring conductor 2a and the ground wiring conductor 2b via, for example, bonding wires 8, and finally the lid 10 is joined to the upper surface of the base 1 via a sealing material, and the semiconductor element 6 is bonded. The semiconductor device 11 is formed by hermetically sealing.
[0026]
In this semiconductor device 11, the input / output pads 3a and the ground pads 3b on the lower surface of the base 1 are connected to predetermined signal or ground circuit conductors 13 of the external electric circuit board 12 via external terminals such as solder bumps 14 or the like. As a result, the semiconductor device 11 is mounted on the external electric circuit board 12 and the signal and ground electrodes of the semiconductor element 6 are electrically connected to the external electric circuit.
[0027]
Further, by connecting an external connection conductor such as a coaxial cable to the wire 5a of the connector 5 attached to the semiconductor device 11, the electrode of the semiconductor element 6 is connected to an external device such as a communication device.
[0028]
The semiconductor device 11 inputs a plurality of low frequency band (5 to 10 GHz) electric signals supplied from an external electric circuit to the semiconductor element 6 through the first wiring conductor 2a, and these are input by the semiconductor element 6. The electric signal is synthesized to produce an electric signal having a high frequency band (40 to 80 GHz) and output to the connector 5 through the second wiring conductor 4, and externally through the wire 5a of the connector 5. An electrical signal transmitted from an external device such as an external communication device or from one external device such as an external communication device (40 to 80 GHz) is transmitted as an electric signal having a high frequency band (40 to 80 GHz). Are input to the semiconductor element 6 through the semiconductor element 6, and an electric signal having a high frequency band (40 to 80 GHz) input by the semiconductor element 6 is converted into a plurality of low frequency bands (5 to 10 GHz). The supplying to the external electrical circuit through the first wiring conductor 2a of these individual frequency band lower electrical signals and converts into an electrical signal.
[0029]
In the mounting structure of the semiconductor device of the present invention, it is important that the plane area of the input / output pad 3a for connecting the semiconductor element 6 to the circuit conductor 13 of the external electric circuit board 12 is 0.196 mm 2 or less.
[0030]
When the plane area of the input / output pad 3a is 0.196 mm 2 or less, the impedance of the input / output pad 3a is the first wiring conductor 2a connecting the semiconductor element 6 and the input / output pad 3a and the external electric circuit board 12. As a result, the first wiring conductor 2a is connected to the circuit conductor 13 of the external electric circuit board 12 via the input / output pad 3a, and a high-frequency electric signal of 5 to 10 GHz is connected. Even if the signal is transmitted, the input / output pad 3a does not cause a large reflection or the like, and the transmission characteristic can be made extremely excellent.
[0031]
When the plane area of the input / output pad 3a exceeds 0.196 mm 2 , the first wiring conductor 2a and the circuit conductor 13 of the external electric circuit board 12 are connected via the input / output pad 3a. When a high-frequency electric signal of 10 GHz is transmitted, reflection occurs in the electric signal at the input / output pad 3a and the transmission characteristics are greatly deteriorated. Therefore, the input / output pad 3a is specified to have a plane area of 0.196 mm 2 or less.
[0032]
Further, as a method for reducing the plane area of the input / output pad 3a to 0.196 mm 2 or less, when the input / output pad 3a is formed by printing a metal paste on a green sheet as the base 1, screen printing is performed. The opening of the screen mask is set to 0.196 mm 2 or less.
[0033]
In the semiconductor device mounting structure of the present invention, it is important to fill the resin filler 15 between the semiconductor device 11 and the external electric circuit board 12.
[0034]
When the resin filler 15 is filled between the semiconductor device 11 and the external electric circuit board 12, the resin filler 15 firmly fixes the semiconductor device 11 on the external electric circuit board 12, thereby the input / output pads. 3a is as small as 0.196 mm 2 or less, the bonding strength of the input / output pad 3a to the base 1 is weak, and the linear expansion coefficients of the base 1 and the external electric circuit board 12 are greatly different. Even if the pads 3a are peeled off from the base 1 or the solder bumps 14 joined to the input / output pads 3a are to be broken, these are effective by fixing the semiconductor device 11 and the external electric circuit board 12 with the resin filler 15. As a result, the semiconductor element 6 and the circuit conductor 13 of the external electric circuit board 12 can be reliably and securely connected via the input / output pad 3a.
[0035]
The resin filler 15 is made of an organic resin such as epoxy resin or silicone resin. After the input / output pad 3a of the semiconductor device 11 is connected to the circuit conductor 13 of the external electric circuit board 12 via the solder bump 14 or the like, the semiconductor filler It is formed by injecting a liquid uncured epoxy resin into a gap formed between the device 11 and the external electric circuit board 12 and thermally curing it.
[0036]
In addition, this invention is not limited to the above-mentioned Example, A various change is possible if it is a range which does not deviate from the summary of this invention.
[0037]
For example, the resin filler 15 has high elasticity around the solder bumps 14 to reinforce the mechanical connection between the semiconductor device 11 and the external electric circuit board 12 by the solder bumps 14, and has low elasticity at the outside of the semiconductor device 11. And the external electrical circuit board 12 may be absorbed and relaxed to further improve the connection reliability.
[0038]
【The invention's effect】
According to the semiconductor element storage package and the semiconductor device of the present invention, the plane area of the input / output pad for connecting the first wiring conductor to the circuit conductor of the external electric circuit board is 0.196 mm 2 or less, and Since the impedance is approximated to the impedance of the first wiring conductor and the circuit conductor of the external electric circuit board, the first wiring conductor and the circuit conductor of the external electric circuit board are connected via the input / output pad and 5-10 GHz. Even if a high-frequency electrical signal is transmitted, the input / output pad does not cause a large reflection or the like, and the transmission characteristics can be improved.
[0039]
Further, according to the mounting structure of the semiconductor device of the present invention, the resin filler is filled between the semiconductor device and the external electric circuit board, and the semiconductor device is fixed on the external electric circuit board by the resin filler. The input / output pads are as small as 0.196 mm 2 or less, and the strength of bonding of the input / output pads to the substrate is weak, and the linear expansion coefficient of the substrate and the external electric circuit board are greatly different. The pads are peeled off from the base body or the solder bumps joined to the input / output pads are about to break, but these are effectively prevented by fixing the semiconductor device and the external electric circuit board with the resin filler, As a result, the semiconductor element and the circuit conductor of the external electric circuit board can be securely and securely connected via the input / output pads.
[Brief description of the drawings]
FIG. 1 is a cross-sectional view showing an embodiment of a semiconductor device mounting structure according to the present invention.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 ... Base 1a ... Mounting part 2a ... 1st wiring conductor 2b ... Ground wiring conductor 3a ... Input / output pad 3b ...・ Ground pad 4 ・ ・ ・ ・ ・ ・ Second wiring conductor 5 ・ ・ ・ ・ ・ ・ Connector 5 a ..Wire material 5 b. ...... Semiconductor element storage package 8... Bonding wire 10 .. Lid 11... Semiconductor device 12 .. External electric circuit board 13. Circuit conductor 14 Solder bump 15 Resin filler

Claims (3)

４０ＧＨｚ〜８０ＧＨｚの電気信号を送受信する半導体素子が搭載される搭載部を有する基体と、該基体の前記搭載部より下面にかけて導出されている複数個のグランド配線導体および第１配線導体と、前記基体の下面に形成され、前記グランド配線導体および第１配線導体に電気的に接続している複数個のグランド用パッドおよび入出力用パッドと、前記基体の搭載部より上面もしくは側面にかけて導出されている第２配線導体と、導電性の線材と絶縁性の外囲体とから成り、線材が前記第２配線導体に電気的に接続され、前記基体における前記第２配線導体が形成された面と側面との間の切り欠きに一部が収容されたコネクターとで形成され、前記コネクターは、下面が前記基体に取着されるとともに、該下面に対向する上面が外部に露出するように前記切り欠きに収容され、前記入出力用パッドの平面積が０．１９６ｍｍ２以下であることを特徴とする半導体素子収納用パッケージ。A base having a mounting portion on which a semiconductor element for transmitting and receiving electrical signals of 40 GHz to 80 GHz is mounted; a plurality of ground wiring conductors and first wiring conductors extending from the mounting portion to a lower surface of the base; and the base A plurality of ground pads and input / output pads that are electrically connected to the ground wiring conductor and the first wiring conductor, and are led out from the mounting portion of the base body to the upper surface or the side surface. A side surface and a side surface of the base body, each of which includes a second wiring conductor, a conductive wire, and an insulating envelope, the wire is electrically connected to the second wiring conductor, and the second wiring conductor is formed on the base. is formed by a connector part is accommodated in the notch between the connector together with the lower surface is attached to the substrate, dew upper surface facing the outside in the lower surface Accommodated in the notch so as to, for housing semiconductor chip package, wherein the plane area of the input-output pad is 0.196Mm 2 or less. 請求項１に記載の半導体素子収納用パッケージと４０ＧＨｚ〜８０ＧＨｚの電気信号を送受信する半導体素子とから成り、前記パッケージの搭載部に半導体素子を搭載固定するとともに該半導体素子の各電極を第１配線導体および第２配線導体に電気的に接続したことを特徴とする半導体装置。A package for housing a semiconductor element according to claim 1 and a semiconductor element for transmitting and receiving an electrical signal of 40 GHz to 80 GHz. The semiconductor element is mounted and fixed on a mounting portion of the package, and each electrode of the semiconductor element is connected to a first wiring. A semiconductor device characterized by being electrically connected to a conductor and a second wiring conductor. 請求項２に記載の半導体装置が外部電気回路基板と電気的に接続されるとともに、前記半導体装置と外部電気回路基板の間に樹脂充填材が充填されていることを特徴とする半導体装置の実装構造。The semiconductor device according to claim 2, wherein the semiconductor device is electrically connected to an external electric circuit board, and a resin filler is filled between the semiconductor device and the external electric circuit board. Construction.
JP2002339919A 2002-11-22 2002-11-22 Mounting structure of semiconductor device Expired - Fee Related JP3847250B2 (en)

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JP3847250B2 true JP3847250B2 (en) 2006-11-22

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