JP3807639B2 - Heat sink and composite semiconductor device using the same - Google Patents

Heat sink and composite semiconductor device using the same Download PDF

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Publication number
JP3807639B2
JP3807639B2 JP7459697A JP7459697A JP3807639B2 JP 3807639 B2 JP3807639 B2 JP 3807639B2 JP 7459697 A JP7459697 A JP 7459697A JP 7459697 A JP7459697 A JP 7459697A JP 3807639 B2 JP3807639 B2 JP 3807639B2
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Prior art keywords
heat sink
insulating substrate
work
semiconductor device
radiating plate
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JPH10256442A (en
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永吾 福田
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日本インター株式会社
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/35Mechanical effects
    • H01L2924/351Thermal stress
    • H01L2924/3511Warping
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/0271Arrangements for reducing stress or warp in rigid printed circuit boards, e.g. caused by loads, vibrations or differences in thermal expansion
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/03Use of materials for the substrate
    • H05K1/05Insulated conductive substrates, e.g. insulated metal substrate
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/0058Laminating printed circuit boards onto other substrates, e.g. metallic substrates
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/30Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/341Surface mounted components

Description

【0001】
【発明の属する技術分野】
本発明は、経時的変化による反りを可能な限り小さくした放熱板及びそれを使用して組み立てた複合半導体装置に関するものである。
【0002】
【従来の技術】
この種の複合半導体装置の概略構造を図3に示す。図において、1は複合半導体装置全体を示し、この複合半導体装置1はその底面に放熱板2を備えている。この放熱板2上に絶縁基板3がソルダ付けされ、この絶縁基板上に半導体ペレット4、外部導出端子5等の電子部品が載置・固着されている。外部導出端子5の他端は蓋体6の透孔7を介して外部に引き出されている。両端開口の絶縁ケース8の一方の開口部には放熱板2の外周部が当接し他方の開口部は蓋体6が被せられている。なお、絶縁ケース8の内部には封止用樹脂が充填され半導体ペレット4等が封止される。
【0003】
ところで、上記放熱板2の上面には図4(b)に示すように、絶縁基板3の導体パターン3a上に半導体ペレット4がソルダ付けされるが、絶縁基板3の下面のメタライズ層(図示省略)と放熱板2とも、ソルダにより固着される。
【0004】
かかる場合に、絶縁基板3と銅材からなる放熱板2とをソルダ付けすると、両者の熱膨張の差により反りが発生する。この反りの発生方向は図4(b)に示すように、下面中央部2aが凹状(上方に向かって凸状)になる。この状態のままで図3に示す複合半導体装置1を組み立てると、図示を省略した放熱板2の取付穴によって、該複合半導体装置1を他の部材に取り付けた際に、放熱板の下面と他の部材間に隙間が形成されてしまい、放熱効果を悪くする。これを防ぐため、従来では放熱板を製作する時に図4(a)に示すように、あらかじめ下面の中央部2aを凸状にして反り量S1を制御している。
【0005】
さらに、絶縁基板3を放熱板2にソルダ付けした直後の反り量S2は、数日間放置しておくと小さくなり、遂には図4(c)の反り量S3に示すように、放熱板2の中央部2aが凸状に変化して安定する。このようなことを考慮して従来では完成品での放熱板2の反り量S3が最小になるように放熱板2の製作時に逆方向の反り量S1を最初に決めておくようにしている。
【0006】
図4(a),(b),(c)の反り量を12個のサンプルについて計測し放熱板2の製作時には中央部2aを凸状にして反り量S1の平均値44.5μm程度になるように放熱板2を加工しておく。この放熱板2に絶縁基板3をソルダ付けすると、ソルダ付け直後で中央部2aの凹部の反り量S2が平均で114.6μmに逆に反る。この時の変化量は、ΔSa=|S1|+|S2|で表わされ、ΔSa=44.5+114.6=159.1μmとなる。これを数日間放置すると、放熱板2の中央部2aが凸状に変化し、反り量S3が平均21.3μmとなる。この放置後の変化量ΔSは、ΔS=|S2|+|S3|で表わされので、ΔS=114.6+21.3=135.9μmとなる。
【0007】
【発明が解決しようとする課題】
しかしながら、上記のような処置では次のような解決すべき課題がある。
絶縁基板3を放熱板2にソルダ付け後、ΔSa,ΔSもの反り量、すなわち100μm以上の反りが2回も反転するので、絶縁基板3に機械的ストレスが加わり、延いては絶縁基板3上の半導体ペレット4にも悪影響を与え、複合半導体装置の特性が劣化するおれがある。
【0008】
【発明の目的】
本発明は上記のような課題を解決するためになされたもので、放熱板2の最終的な反り量S3を小さくするとともに、反りの変化量ΔSa及びΔSを小さくして絶縁基板3の割れや半導体ペレット4の特性変化を少なくすることができる放熱板及びそれを使用した複合半導体装置を提供することを目的とするものである。
【0009】
【課題を解決するための手段】
請求項1に記載の発明によれば、放熱板の上面に絶縁基板がソルダ付けされ、該絶縁基板の上面に半導体ペレットがソルダ付けされる構造の放熱板において、上記放熱板の上面にプレス加工による加工硬化部を設け、前記放熱板の中央部から外縁部に向かって、第1の加工硬化せしめられていない部分、前記加工硬化部、第2の加工硬化せしめられていない部分の順に、それらを前記放熱板の上面に配列し、前記第1の加工硬化せしめられていない部分上に前記絶縁基板を配置したことを特徴とする放熱板が提供される。
請求項3に記載の発明によれば、放熱板上に、ソルダ付けにより電子部品が載置される絶縁基板を有する複合半導体装置において、上記放熱板の絶縁基板がソルダ付けされる側の面に、ソルダ付けによる反りの発生を小さくするための加工硬化部を設け、前記放熱板の中央部から外縁部に向かって、第1の加工硬化せしめられていない部分、前記加工硬化部、第2の加工硬化せしめられていない部分の順に、それらを前記放熱板の上面に配列し、前記第1の加工硬化せしめられていない部分上に前記絶縁基板を配置し、前記放熱板を用いて組み立てたことを特徴とする複合半導体装置が提供される。
【0010】
【発明の実施の形態】
以下に、本発明の実施の形態を図1を参照して説明する。図1において、放熱板12の絶縁基板がソルダ付けされる面にプレス機械等により凹状に加工し、加工硬化部13を形成する。この実施例では板厚3mmの放熱板12に対して0.5mmの深さの凹部なるまで押圧し、加工硬化部13を形成した。本発明の実施の形態では、図1のように一定の幅を持つ帯状の加工硬化部13が形成されるが、本発明に関連する発明の実施形態では、そのように帯状にせずに全体的に押圧して該加工硬化部13(図示せず)を形成しても良い。
【0011】
上記のように加工硬化部13を形成した放熱板12を、図2(a)に示すように、放熱板12の製作時にあらかじめ、中央部12aが反り量S10となるように凸状に形成しておく。なお、種々の実験の結果、S10=0〜30μmの範囲で反り量を決めると、最終的に良好な結果が得られることが判明した。次いで、絶縁基板3をソルダ付けすると、図2(b)に示すように中央部12aが反り量S20の凹状となる。その後、数日間放置すると、図2(c)に示すように中央部12aが反り量S30の僅かな反りとなり安定した形状となる。上記図2(a),(b)及び(c)の反り量から、放熱板製作後の反り(S10)の平均は22.6μm、絶縁基板ソルダ付け後の反り(S20)の平均は、−69.2μmであるから反り変化量ΔSa=|S10|+|S20|=|22.6|+|69.2|=91.8μmとなる。また、放熱板放置後の反り(S30)の平均は、7.3μmであり、放置後変化量ΔS=|S20|+|S30|=|69.2|+|7.3|=76.5μmとなる。このように、本発明によれば、放熱板放置後の反りS30は、従来のS3に比較し、約1/3程度となる。また、製作途中における反りの変化量ΔSaは、従来のΔSaに比較して約1/2程度になる。これらの結果から絶縁基板の割れの発生率が減少し、この絶縁基板にソルダ付けされる半導体ペレットの特性変化を少なくすることができる。
【0012】
次に、上記の放熱板を使用し、従来と同様に図3に示したように、放熱板12の外周に両端開口の絶縁ケース8の一方が当接し、他方の開口端には外部端子5を導出した蓋体6を被せ、絶縁ケース8の内部には樹脂を充填して複合半導体装置1を完成させる。
こうして完成した複合半導体装置1は、放熱板12の反り及び放置後の変化量が少ないために、放熱板12とソルダ付けされる絶縁基板3の割れが少なくなり、最終的に複合半導体装置1の特性への悪影響を効果的に防ぐことができる。
【0013】
【発明の効果】
以上のように、本発明の放熱板及びそれを用いた複合半導体装置は、放熱板の反りが小さくかつ製作途中での反りの変化量を相対的に低く抑えることができるので、半導体ペレットに与える機械的ストレスも少なく、結果的に複合半導体装置の特性を向上させることができる。
【図面の簡単な説明】
【図1】本発明の放熱板の平面図である。
【図2】同図(a)は本発明による放熱板の製作直後の反りの状態を示す正面図、同図(b)は本発明による放熱板に絶縁基板及び半導体ペレットをソルダ付けした後の反り状態を示す正面図、同図(c)は本発明による放熱板を所定期間放置後の反りの状態を示す正面図である。
【図3】本発明及び従来の放熱板を使用して組み立てた複合半導体装置の概略構造を示す断面図である。
【図4】同図(a)は従来の放熱板の製作直後の反りの状態を示す正面図、同図(b)は従来の放熱板に絶縁基板及び半導体ペレットをソルダ付けした後の反り状態を示す正面図、同図(c)は従来の放熱板を所定期間放置後の反りの状態を示す正面図である。
【符号の説明】
1 複合半導体装置
3 絶縁基板
4 半導体ペレット
5 外部導出端子
6 蓋体
12 放熱板
13 加工硬化部
[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a heat sink that minimizes warping due to changes over time and a composite semiconductor device assembled using the heat sink.
[0002]
[Prior art]
A schematic structure of this type of composite semiconductor device is shown in FIG. In the figure, reference numeral 1 denotes the entire composite semiconductor device, and this composite semiconductor device 1 includes a heat sink 2 on its bottom surface. An insulating substrate 3 is soldered on the heat radiating plate 2, and electronic components such as a semiconductor pellet 4 and an external lead-out terminal 5 are placed and fixed on the insulating substrate 3 . The other end of the external lead-out terminal 5 is drawn out through the through hole 7 of the lid body 6. The one opening of openings at both ends of the insulating case 8 against the outer peripheral portion of the heat radiating plate 2 is brought, the other opening lid 6 is covered. The insulating case 8 is filled with a sealing resin to seal the semiconductor pellet 4 and the like.
[0003]
Incidentally, as shown in FIG. 4B, the semiconductor pellet 4 is soldered on the conductor pattern 3a of the insulating substrate 3 on the upper surface of the heat radiating plate 2, but the metallized layer (not shown) on the lower surface of the insulating substrate 3 is omitted. ) And the heat sink 2 are fixed by solder.
[0004]
In such a case, when the insulating substrate 3 and the heat radiating plate 2 made of a copper material are soldered, warpage occurs due to the difference in thermal expansion between the two. As shown in FIG. 4B, the direction of occurrence of warpage is such that the lower surface central portion 2a is concave (convex upward). When the composite semiconductor device 1 shown in FIG. 3 is assembled in this state, when the composite semiconductor device 1 is attached to another member by a mounting hole of the heat sink 2 (not shown), the lower surface of the heat sink and others A gap is formed between the members, and the heat dissipation effect is deteriorated. In order to prevent this, conventionally, when the heat radiating plate 2 is manufactured, as shown in FIG. 4A, the center portion 2a of the lower surface is made convex in advance to control the warpage amount S1.
[0005]
Furthermore, warpage S2 of immediately after with solder the insulating substrate 3 to the heat radiating plate 2, if left for several days, decreases, eventually as shown in warp amount S3 in FIG. 4 (c), the heat radiating plate 2 The central part 2a of the slab changes to a convex shape and becomes stable. Considering this, conventionally, the amount of warp S1 in the reverse direction is determined first when manufacturing the heat sink 2 so that the amount of warp S3 of the heat sink 2 in the finished product is minimized.
[0006]
4 (a), (b), and (c) are measured for twelve samples . When the heat sink 2 is manufactured, the central portion 2a is convex and the average value of the amount of warp S1 is about 44.5 μm. The heat sink 2 is processed in advance. When the insulating substrate 3 is soldered to the heat radiating plate 2, the warpage amount S2 of the concave portion of the central portion 2a is warped reversely to 114.6 μm on average immediately after the soldering. The amount of change at this time is represented by ΔSa = | S1 | + | S2 |, and ΔSa = 44.5 + 114.6 = 159.1 μm. If this is left for several days, the central portion 2a of the heat radiating plate 2 changes into a convex shape, and the amount of warpage S3 becomes 21.3 μm on average. Since the change amount ΔS after being left is expressed by ΔS = | S2 | + | S3 |, ΔS = 114.6 + 21.3 = 13.5 μm.
[0007]
[Problems to be solved by the invention]
However, the above treatment has the following problems to be solved.
After the insulating substrate 3 is soldered to the heat sink 2, the warping amount of ΔSa, ΔS, that is, the warp of 100 μm or more is reversed twice, so that mechanical stress is applied to the insulating substrate 3 and eventually on the insulating substrate 3 The semiconductor pellet 4 may be adversely affected and the characteristics of the composite semiconductor device may deteriorate.
[0008]
OBJECT OF THE INVENTION
The present invention has been made to solve the above-described problems. The final warpage amount S3 of the heat radiating plate 2 is reduced, and the warpage change amounts ΔSa and ΔS are reduced to reduce cracks in the insulating substrate 3. An object of the present invention is to provide a heat sink capable of reducing the change in characteristics of the semiconductor pellet 4 and a composite semiconductor device using the heat sink.
[0009]
[Means for Solving the Problems]
According to the first aspect of the present invention, in the heat sink having a structure in which the insulating substrate is soldered on the upper surface of the heat sink, and the semiconductor pellet is soldered on the upper surface of the insulating substrate, the upper surface of the heat sink is pressed. In the order of the first work-hardened part, the second work-hardened part, the second work-hardened part, in order from the center part of the heat sink toward the outer edge part. Are arranged on the upper surface of the heat radiating plate, and the insulating substrate is arranged on a portion not cured by the first work.
According to a third aspect of the present invention, in the composite semiconductor device having the insulating substrate on which the electronic component is mounted by soldering on the heat sink, the surface of the heat sink on the side to which the insulating substrate is soldered. A work hardening portion for reducing the occurrence of warpage due to soldering, and a first work hardening portion, a second work hardening portion, and a second work hardening portion from the center portion of the heat sink toward the outer edge portion. In order of the parts that are not work hardened, they are arranged on the upper surface of the heat sink, the insulating substrate is disposed on the first work hardened part, and assembled using the heat sink. A composite semiconductor device is provided.
[0010]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, an embodiment of the present invention will be described with reference to FIG. In FIG. 1, the work hardening portion 13 is formed by processing the surface of the heat sink 12 on which the insulating substrate is soldered into a concave shape by a press machine or the like. In this embodiment, the work hardened portion 13 was formed by pressing the heat sink 12 having a thickness of 3 mm until a recess having a depth of 0.5 mm was formed. In the embodiment of the present invention, a band-shaped work-hardening portion 13 having a constant width is formed as shown in FIG. 1, but in the embodiment of the invention related to the present invention , the entire band is not formed in such a manner. The work-hardened portion 13 (not shown) may be formed by pressing to the right.
[0011]
As shown in FIG. 2A, the heat radiating plate 12 having the work hardening portion 13 formed as described above is formed in a convex shape in advance so that the central portion 12a has a warp amount S10 when the heat radiating plate 12 is manufactured. Keep it. As a result of various experiments, it was found that when the amount of warpage was determined in the range of S10 = 0 to 30 μm, good results were finally obtained. Next, when the insulating substrate 3 is soldered, the central portion 12a becomes concave with a warp amount S20 as shown in FIG. After that, when left for several days, the central portion 12a is slightly warped with a warp amount S30 as shown in FIG. 2 (a), (b) and (c), the average of the warp (S10) after manufacturing the heat sink is 22.6 μm, and the average of the warp (S20) after soldering the insulating substrate is − Since it is 69.2 μm, the warpage change amount ΔSa = | S10 | + | S20 | = | 22.6 | + | 69.2 | = 91.8 μm. Further, the average of the warp (S30) after leaving the heat sink is 7.3 μm, and the amount of change after leaving ΔS = | S20 | + | S30 | = | 69.2 | + | 7.3 | = 76.5 μm It becomes. As described above, according to the present invention, the warpage S30 after leaving the heat sink is about 比較 compared to the conventional S3. Further, the amount of change ΔSa of the warp during the production is about ½ compared to the conventional ΔSa. From these results, the occurrence rate of cracks in the insulating substrate is reduced, and the characteristic change of the semiconductor pellet soldered to the insulating substrate can be reduced.
[0012]
Next, using the above heat sink, as shown in FIG. 3 as in the prior art, one end of the insulating case 8 having both ends opened to the outer periphery of the heat sink 12, and the external terminal 5 is connected to the other open end. The insulating body 8 is filled with resin and the composite semiconductor device 1 is completed.
Since the composite semiconductor device 1 thus completed has less warpage of the heat sink 12 and a change amount after being left, the heat sink 12 and the insulating substrate 3 to be soldered are less cracked, and finally the composite semiconductor device 1 The adverse effect on the characteristics can be effectively prevented.
[0013]
【The invention's effect】
As described above, since the heat sink of the present invention and the composite semiconductor device using the heat sink have a small warp of the heat sink and the amount of change of the warp during the manufacturing can be relatively low, it is given to the semiconductor pellet. There is little mechanical stress, and as a result, the characteristics of the composite semiconductor device can be improved.
[Brief description of the drawings]
FIG. 1 is a plan view of a heat sink according to the present invention.
FIG. 2 (a) is a front view showing a state of warping immediately after manufacturing a heat sink according to the present invention, and FIG. 2 (b) is a view after soldering an insulating substrate and a semiconductor pellet to the heat sink according to the present invention. The front view which shows a curvature state, the figure (c) is a front view which shows the state of the curvature after leaving the heat sink by this invention for a predetermined period.
FIG. 3 is a cross-sectional view showing a schematic structure of a composite semiconductor device assembled using the present invention and a conventional heat sink.
4A is a front view showing a state of warping immediately after manufacturing a conventional heat sink, and FIG. 4B is a warp state after an insulating substrate and a semiconductor pellet are soldered to the conventional heat sink. FIG. 2C is a front view showing a warped state after leaving a conventional heat sink for a predetermined period.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 Composite semiconductor device 3 Insulating substrate 4 Semiconductor pellet 5 External lead-out terminal 6 Lid 12 Heat sink 13 Work hardening part

Claims (3)

放熱板の上面に絶縁基板がソルダ付けされ、該絶縁基板の上面に半導体ペレットがソルダ付けされる構造の放熱板において、上記放熱板の上面にプレス加工による加工硬化部を設け、前記放熱板の中央部から外縁部に向かって、第1の加工硬化せしめられていない部分、前記加工硬化部、第2の加工硬化せしめられていない部分の順に、それらを前記放熱板の上面に配列し、前記第1の加工硬化せしめられていない部分上に前記絶縁基板を配置したことを特徴とする放熱板。In a heat sink having a structure in which an insulating substrate is soldered on the upper surface of the heat sink, and a semiconductor pellet is soldered on the upper surface of the heat insulating plate, a work hardening portion by press working is provided on the upper surface of the heat sink. From the central part toward the outer edge part, the first work-cured part, the work-hardened part, and the second work-hardened part are arranged in this order on the upper surface of the heat sink, A heat radiating plate , wherein the insulating substrate is disposed on a portion that is not first cured . 上記放熱板の加工硬化部を設けた後の下面は、S10=0〜30μmの範囲で全体が凸状に反りを有することを特徴とする請求項1に記載の放熱板。  2. The heat sink according to claim 1, wherein the lower surface of the heat sink after the work hardening portion is provided has a convexly warped surface in a range of S10 = 0 to 30 μm. 放熱板上に、ソルダ付けにより子部品が載置される絶縁基板を有する複合半導体装置において、上記放熱板の絶縁基板がソルダ付けされる側の面に、ソルダ付けによる反りの発生を小さくするための加工硬化部を設け、前記放熱板の中央部から外縁部に向かって、第1の加工硬化せしめられていない部分、前記加工硬化部、第2の加工硬化せしめられていない部分の順に、それらを前記放熱板の上面に配列し、前記第1の加工硬化せしめられていない部分上に前記絶縁基板を配置し、前記放熱板を用いて組み立てたことを特徴とする複合半導体装置。On the heat radiating plate, the composite semiconductor device having an insulating substrate electronic components are mounted by solder with, the surface on the side where the insulating substrate of the heat radiating plate is solder attached, to reduce the occurrence of warpage due to solder with For the work hardening part for providing , from the central part of the radiator plate toward the outer edge part, the first work hardening part, the work hardening part, the second work hardening part, in this order, A composite semiconductor device characterized in that they are arranged on the upper surface of the heat radiating plate, the insulating substrate is arranged on a portion not cured by the first work, and is assembled using the heat radiating plate.
JP7459697A 1997-03-11 1997-03-11 Heat sink and composite semiconductor device using the same Expired - Lifetime JP3807639B2 (en)

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JP3807639B2 true JP3807639B2 (en) 2006-08-09

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US6933443B2 (en) * 2004-01-28 2005-08-23 Infineon Technologies North America Corp. Method for bonding ceramic to copper, without creating a bow in the copper
JP5391151B2 (en) * 2010-05-25 2014-01-15 日鉄住金エレクトロデバイス株式会社 Package for housing semiconductor element and manufacturing method thereof
JP5601384B2 (en) * 2011-02-08 2014-10-08 富士電機株式会社 Manufacturing method of heat sink for semiconductor module, heat sink, and semiconductor module using the heat sink
JP6201828B2 (en) * 2014-03-10 2017-09-27 三菱マテリアル株式会社 Manufacturing method of power module substrate with heat sink
WO2019230826A1 (en) * 2018-05-29 2019-12-05 京セラ株式会社 Electronic element mounting substrate, electronic device, and electronic module

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