JP3805547B2 - Sample preparation equipment - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
  The present invention relates to a method and apparatus for producing a planar sample for observation with a transmission electron microscope (hereinafter abbreviated as TEM) and a scanning electron microscope (hereinafter abbreviated as SEM), and in particular, using an energy beam. The present invention relates to a method for separating and extracting a micro sample piece including an observation desired region from a sample substrate, and processing the observation desired region of the micro sample piece into a planar shape, and an apparatus therefor.
[0002]
[Prior art]
  The need for observation, analysis, and measurement by TEM (hereinafter abbreviated as “representation”) refers to a sample having an observation surface perpendicular to the surface of a sample substrate (for example, a semiconductor wafer or chip) (hereinafter referred to as a cross section). Not only about the sample) but also about the sample having an observation surface parallel to the surface of the sample substrate (hereinafter abbreviated as a plane sample).
[0003]
  First, a typical method for producing a conventional flat sample will be described. Examples of samples to be observed are as follows. The sample substrate is a semiconductor wafer (for example, a thickness of 500 μm and a diameter of 300 mm), and the region desired to be observed is a specific region on the wafer surface and is located at a depth of about 3 μm from the wafer surface. The area is 5 μm square. First, using a diamond cutter, a dicing saw, or the like, a sample piece having a size of about 1 mm square including the desired observation region is cut out from the wafer. If the cut-out sample piece is such a size, it is easily placed on the mesh holding the TEM sample and is easy to handle. Next, the surface of the cut sample piece (original wafer surface) is bonded and fixed to the surface of the polishing jig so that the surface of the sample piece faces the surface of the polishing jig.
[0004]
  There are various types of polishing jigs, but basically the flatness of the sample is determined by using a polishing jig equipped with a device that can measure micron-order dimensions such as a micrometer head. Polish while adjusting. A polishing jig to which the sample piece is fixed is pressed onto a rotating polishing disk coated with an abrasive and the sample piece is polished from the back surface. About 490 μm is polished from the back surface of the sample piece while adjusting the rotational speed of the abrasive and the polishing machine. By this operation, a polished sample having a thickness of about 10 μm is obtained.
[0005]
  In order to make the polished sample thinner, argon ions with a low acceleration voltage are irradiated from an oblique direction from the front and back surfaces of the polished sample (this operation is called ion thinning). At this time, in order to expose the desired observation region, the timing of the ion irradiation stop is greatly affected, so the ion irradiation and the observation of the ion irradiation portion with an optical microscope, a scanning electron microscope, a transmission electron microscope, etc. are repeated. The ion irradiation is stopped when the hole is opened in the center of the polished sample, and the thin film portion thinned to about 100 nm or less around the hole is used as a planar sample to be observed by TEM. This flaky sample is transferred onto a mesh, this mesh is mounted on a TEM stage, and TEM observation is executed. In such a method, it often takes one day at the earliest from cutting out the sample piece to starting the TEM observation, and several days if the work is advanced carefully.
[0006]
  As for a method for producing such a planar sample, for example, a collection of papers: “Ultramicroscopy”, Vol. 52, (1993), pages 127 to 140 (Ultra-microscopy, 52, (1993) pp. 127 To 140), H. et al. Cerva et al. Have described under the title "Specific prepa-ration procedures for failure analysis of (sub) micron areas in silicon devices" (Publication 1).
[0007]
[Problems to be solved by the invention]
  However, the conventional method for producing a flat sample as described above has the following problems.
[0008]
1) Problem of positioning the target position
  In the above-described conventional planar sample preparation method, it is very difficult to specify a position in the wafer surface, particularly to prepare a planar sample that requires positioning at the micron level, and it is also very difficult to align in the depth direction. For example, in the semiconductor device manufacturing process, for the need to clarify the structure of a 50 nm-thick layer at the bottom of the contact hole at a specific location, it is difficult to position in the horizontal plane by the above-described conventional processing method. And the fact that position control in the depth direction is extremely difficult, few satisfactory observation results are obtained. As described above, in the conventional processing method, the probability that an accurate observation result can be obtained for a precious sample having only one portion to be observed is very small and almost zero.
[0009]
2) Problem of wafer breakage
  When it is necessary to observe a planar TEM for a defective area obtained by wafer inspection, the wafer is cleaved or divided by a diamond cutter or a dicing saw as described above, and processed into a pellet containing the target defective area. The pellet is finished into a flat sample by the above method. That is, in the conventional processing method, in order to produce a planar sample from a wafer, the wafer must be divided even if the observation location is only one point in the wafer. Due to the division, adjacent normal chips are divided. Recently, since the wafer diameter is 200 mm and tends to increase to 300 mm or more, the wafer loaded with a lot of high-value-added devices is cut and cleaved for inspection at only a few locations. Thus, it is very uneconomical to dispose of adjacent normal chips as well. Therefore, there is a demand for a processing method that can extract only the observation required region without cutting the wafer and produce a planar sample of the specific region.
[0010]
3) Problem of plane sample preparation for adjacent parts with different depths
  There are many observation needs in which a plurality of adjacent desired observation regions are separated by, for example, only about 10 μm in the in-plane direction, and the depths from the wafer surface are different from each other. The conventional processing method cannot cope with such needs at all. That is, in the conventional method described above, a planar sample can be prepared / observed only for one region (observation portion having a specific depth) among a plurality of desired observation regions, but sample preparation / observation can be performed for other desired observation regions. I had to give up. In other words, it was not possible to produce planar samples for a plurality of regions that are close to each other in the in-plane direction and have different depths.
[0011]
4) Problem of processing time
  In the conventional method, the time required for mechanical polishing is long, and in particular, a long time is required for manual work while paying attention to many parameters such as adjustment of the abrasive and rotation adjustment of the polishing disk. In addition, since ion bombardment is performed at a low acceleration, the sample surface can be scraped very slowly, so it takes a very long time to expose the desired observation area. The observation of the irradiated part must be repeated and this is a time-consuming operation. As described above, the processing time takes one to several days. Therefore, in order to shorten the time from detection of the defective part to identification of the observation result, it has been desired to shorten the sample preparation time.
[0012]
  In particular, since the polishing work is a valuable observation sample, the polishing work should be performed carefully by hand from the beginning to the end with skilled skills, even if mechanical polishing can be applied to some parts. There was also a problem that mental tension was forced for a long time because it was necessary to always grasp the polishing situation on the way.
[0013]
  The present invention has been made in view of the above-mentioned problems 1) to 4), and the first object of the present invention is to provide a specific desired observation location where foreign matter or a defect detected by wafer inspection exists. An object of the present invention is to provide a sample preparation method for accurately positioning a wafer without cutting and separating it and preparing a flat sample having an observation surface parallel to the wafer surface. A second object of the present invention is to provide a sample preparation apparatus suitable for use in carrying out the above-described sample preparation method of the present invention.
[0014]
[Means for Solving the Problems]
  The above first object of the present invention is to
(01) A method for producing a flat sample for processing a part of a sample substrate placed on a sample stage into a flat sample having an observation surface substantially parallel to the surface of the sample substrate. A step of separating a micro sample piece including a region to be processed into the planar sample by irradiating a beam from the sample substrate and fixing the separated micro sample piece on the sample holder; And processing the at least part of the fixed micro sample piece into a flat sample having an observation surface substantially parallel to the surface of the sample substrate by irradiation with an energy beam. . In this way, by processing a micro sample piece separated and extracted from a sample substrate into a planar shape using an energy beam, a micro flat sample having an observation surface parallel to the surface of the sample substrate can be easily and highly accurately processed. can do.
[0015]
(02)Also,In the method for producing a planar sample according to (01) above,The planar sample can be used as a sample for observation with a scanning electron microscope or transmission electron microscope, or elemental analysis with an energy dispersive X-ray analyzer. As mentioned above, in the present invention, the term “observation” is used in the meaning including observation, analysis, and measurement. Therefore, the sample prepared according to the present invention can be used as a sample for these observation, analysis and measurement.
(03) Also, above (01) From (02) In the method for producing a planar sample according to any one of the above, the sample holder separated from the sample substrate is fixed onto the sample holder by attaching the sample holder to a sample stage of a transmission electron microscope or a scanning electron microscope. The mounting can be performed in such an arrangement that the surface of the sample substrate of the micro sample piece is substantially perpendicular to the optical axis of the transmission electron microscope or the scanning electron microscope when mounted on the surface. That is, by arranging the surface of the original sample substrate of the minute sample piece so as to be substantially perpendicular to the optical axis of the observation apparatus, the observation surface on which the minute sample piece is processed (substantially parallel to the original sample substrate surface). Can be observed from a direction perpendicular thereto.
[0016]
  The second object of the present invention described above is as follows.
(04) An ion beam irradiation optical system for irradiating a sample with an ion beam, secondary particle detection means for detecting secondary particles generated from the sample by irradiation of the ion beam, a sample stage on which the sample is placed, and the above Sample holder holding means for fixing a micro sample piece obtained by separating and extracting a part of the sample by irradiation with an ion beam, and sample piece transfer for transferring the micro sample piece onto the sample holder Means and a gas supply source for supplying a source gas for forming an assist deposition film in the ion beam irradiation region, and the holding means for holding the sample holder includes the ion beam irradiation optics. Centering on an axis perpendicular to the optical axis of the system, the surface of the sample holder for fixing the minute sample piece is at least two positions parallel and perpendicular to the optical axis. Is achieved by making unit for a planar sample, characterized by comprising a constant can function. With this apparatus configuration, the surface corresponding to the original sample surface of the micro sample piece separated and extracted from the sample is held perpendicular to the optical axis of the ion beam irradiation optical system, and the micro sample piece is placed on the sample holder. Ion beam irradiation from the ion beam irradiation optical system in a state where the sample piece is fixed and the surface corresponding to the original sample surface of the micro sample piece is held parallel to the optical axis of the ion beam irradiation optical system. Thus, the micro sample piece can be planarized.
(05) The above (04) In the flat sample preparation apparatus described in (1), the ion beam irradiation optical system can be a focused ion beam irradiation optical system or a projection ion beam irradiation optical system. That is, in the present invention, the ion beam irradiation optical system used for the preparation of the planar sample may be a focused ion beam irradiation optical system or a projection ion beam irradiation optical system. A good flat processed sample can be obtained by using either of them.
[0017]
(06) Also, above (04) In the flat sample preparation apparatus according to the above, a sample holder rotating means for rotating the sample holder about the rotation axis perpendicular to the optical axis of the ion beam irradiation optical system is further provided on the sample stage. Can do. As a result, when the micro sample piece separated and extracted from the sample is fixed on the sample holder and when the micro sample piece fixed on the sample holder is flattened by ion beam irradiation, the posture of the sample holder is set appropriately. be able to.
[0018]
DETAILED DESCRIPTION OF THE INVENTION
  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.
[0019]
  The method for preparing a flaky sample according to this example is a sample preparation for processing a part of a sample substrate placed on a sample stage into a flaky sample having a thin wall surface substantially parallel to the sample substrate surface. A method comprising: irradiating the sample substrate with an ion beam to separate and extract a micro sample piece including an area to be processed into the flaky sample from the sample substrate; and the separated micro sample piece on a sample holder. And at least a part of the micro sample piece fixed on the sample holder is processed into a flaky sample having a thin wall surface substantially parallel to the surface of the sample substrate by irradiation with the ion beam. And a process.
[0020]
  In the method for producing a flat sample described in this example, the step of separating and extracting the micro sample piece from the sample substrate and fixing it on the sample holder is performed by processing the region of the sample substrate to be processed into the flat sample. By vertical irradiation and oblique grooves in the sample substrate by crossing the sample substrate by irradiation with the energy beam in the vicinity of the sample substrate, the sample substrate was cantilevered by a support part made of a part of the sample substrate. A step of forming the micro sample piece, a step of fixing a part of the transfer means to a part of the micro sample piece supported by the cantilever, and cutting the support portion by irradiation of the energy beam to form the micro sample piece. A step of separating and extracting the sample piece from the sample substrate, and driving the transfer means to move the separated and extracted minute sample piece to the sample holder so that the minute sample piece is placed on the sample holder. It can be a process of constant, and separating said transport means from the minute sample piece was fixed onto the sample holder, and those comprising. By adopting such a method, it is possible to easily separate and extract a small sample piece from the sample substrate and fix it on the sample holder without any manual intervention.
[0021]
  The planar sample preparation method described in this example is also a plane for preparing a planar sample having an observation surface substantially parallel to the surface of the sample substrate from a part of the sample substrate placed on the sample stage. A method for preparing a sample, wherein a minute sample piece including a desired observation region is separated from the sample substrate by irradiating the sample substrate with an energy beam, and the separated minute sample piece is used for the observation. A step of fixing on a sample holder suitable for an observation device, and at least a part of the micro sample piece fixed on the sample holder has an observation surface substantially parallel to the surface of the sample substrate by irradiation with an energy beam And a step of processing into a flat sample. In this way, by fixing the micro sample piece separated and extracted from the sample substrate on the sample holder that can be used as the sample holder for the observation device, the sample holder is incorporated into the observation device as it is after the planar processing is completed. The observation can be started immediately.
[0022]
  Further, in the method for producing a planar sample according to the above [0021] paragraph, the step of separating and extracting the minute sample piece from the sample substrate and fixing it on the sample holder includes the step of observing the desired observation region of the sample substrate. By forming the vertical groove and the oblique groove in the sample substrate so as to cross each other in the sample substrate by irradiation with an energy beam in the vicinity, the microscopically supported cantilever is supported by a support portion that is a part of the sample substrate. A step of forming a sample piece, a step of fixing a part of the transfer means to a part of the fine sample piece supported in a cantilever manner, and the fine sample piece by cutting the support portion by irradiation of the energy beam. Separating the sample from the sample substrate and driving the transfer means to transfer the separated and extracted micro sample piece to the sample holder so that the micro sample piece is placed on the sample holder. And fixing can comprise the step of separating said transfer means from the minute sample piece was fixed on the sample holder. By adopting such a method, it is possible to easily and accurately separate a small sample piece from a desired portion on the sample substrate and fix it on the sample holder without any manual intervention.
[0023]
  Further, in the method for producing a planar sample according to the above [0019] or [0020] paragraph, the micro sample in the step of fixing a part of the transfer means to a part of the micro sample piece supported by the cantilever. The fixing of a part of the transfer means to a part of the piece was supported by the cantilever A part of the transfer means is brought into contact with a part of the micro sample piece, and an ion beam assisted deposition film is formed on the contact part to thereby form a part of the micro sample piece through the ion beam assisted deposition film. It can be carried out using a technique for fixing a part of the transfer means. Thus, by using the ion beam assisted deposition film for fixing the small sample piece and the transfer means, a reliable connection between the two can be realized.
[0024]
  Further, in the method for producing a flat sample according to any one of the above paragraphs [0019] to [0023], the sample of the micro sample piece in the step of fixing the separated and extracted micro sample piece on the sample holder. The fixing on the holder is performed by bringing the micro sample piece separated and extracted into contact with the sample holder and forming the ion beam assisted deposition film at the contact portion, thereby separating the separation through the ion beam assisted deposition film. This can be done by using a technique for fixing the extracted minute sample piece on the sample holder. By using the ion beam assisted deposition film for fixing the micro sample piece separated and extracted in this manner onto the sample holder, a reliable connection between the two can be realized.
[0025]
  Further, in the method for preparing a planar sample as described in the above [0024] paragraph, the separation of the transfer means from the micro sample piece in the step of separating the transfer means from the micro sample piece fixed on the sample holder may include: The ion beam assisted deposition film having the transfer means fixed to the minute sample piece is irradiated with an energy beam to cut off the ion beam assisted deposition film, thereby separating the transfer means from the minute sample piece. It can be done using techniques. In this way, by removing the deposition film that fixes the micro sample piece and the transfer means by energy beam irradiation, the micro sample piece can be easily fixed on the sample holder without damaging the micro sample piece. The transfer means can be separated from the machine.
[0026]
  Moreover, in the method for producing a flat sample according to the above [0019] paragraph, the step of separating and extracting the minute sample piece from the sample substrate and fixing it on the sample holder is processed into the flat sample on the sample substrate. It is cantilevered by a support part comprising a part of the sample substrate by forming a vertical groove and an oblique groove in the sample substrate by irradiating the vicinity of the power region with an energy beam. A step of forming the micro sample piece, and a part of the transfer means is brought into contact with a part of the micro sample piece supported by the cantilever, and the ion beam assisted deposition film is formed at the contact portion. A step of fixing a part of the transfer means to a part of the micro sample piece via a beam-assisted deposition film; and the support part for irradiating the energy beam. Cutting and separating and extracting the micro sample piece from the sample substrate, and driving the transfer means to transfer the micro sample piece separated and extracted from the sample substrate to the sample holder. Fixing the micro sample piece on the sample holder through the ion beam assisted deposition film by contacting a piece on the sample holder and forming an ion beam assisted deposition film on the contact portion; By irradiating the ion beam assisted deposition film with a part of the transfer means fixed to a part of the micro sample piece to excise the ion beam assisted deposition film, the ion beam assisted deposition film is removed from the micro sample piece. Separating the transfer means. By adopting such a method, a minute sample piece can be easily separated and extracted from the sample substrate and fixed on the sample holder without any manual intervention.
[0027]
  Further, in the method for producing a planar sample according to the above [0020] paragraph, the step of separating and extracting the minute sample piece from the sample substrate and fixing it on the sample holder is performed in the desired observation region of the sample substrate. By forming the vertical groove and the oblique groove in the sample substrate so as to cross each other in the sample substrate by irradiation with an energy beam in the vicinity, the microscopically supported cantilever by a supporting portion made of a part of the sample substrate. A step of forming a sample piece, and a part of the transfer means are brought into contact with a part of the above-mentioned cantilevered micro sample piece, and an ion beam assist device is brought into contact with the contact part Forming a position film to fix a part of the transfer means to a part of the micro sample piece via the ion beam assisted deposition film; and cutting the support part by irradiation of the energy beam. Separating and extracting the minute sample piece from the sample substrate, and driving the transfer means to move the minute sample piece separated and extracted from the sample substrate to the sample holder to place the minute sample piece on the sample holder. And a step of fixing the micro sample piece on the sample holder through the ion beam assisted deposition film by forming an ion beam assisted deposition film on the contact portion, and a part of the micro sample piece The ion beam assisted deposition film, to which a part of the transfer means is fixed, is irradiated with an energy beam. Can comprise the step of separating said transfer means from said micro sample piece by excising an ion beam assist deposition film. By adopting such a method, a minute sample piece can be easily separated and extracted from the sample substrate and fixed on the sample holder without any manual intervention.
[0028]
  Further, in the method for producing a planar sample according to the above [0019] paragraph or [0020] paragraph, the sample holder is configured to include a thin plate portion for fixing the micro sample piece separated and extracted from the sample substrate. The micro sample piece separated and extracted from the sample substrate can be fixed on the upper surface (surface parallel to the thickness direction) of the thin plate portion. Accordingly, it is possible to ensure an appropriate posture of the minute sample piece when the required observation surface is planarized later and when the observation surface is observed by the observation apparatus.
[0029]
  Further, in the method for producing a planar sample according to the above [0028] paragraph, the sample holder is at least a side surface (thickness direction) of the thin plate portion on the sample stage at the time of separating and extracting the micro sample piece from the sample substrate. The surface perpendicular to the surface of the sample stage may be placed parallel to the upper surface of the sample stage. Thereby, the sample holder at the time of separating and extracting the micro sample piece can be held in a posture suitable for fixing the micro sample piece that has been separated and extracted on the sample holder.
[0030]
  Further, in the method for producing a planar sample according to the above [0021] or [0022] paragraph, the sample holder is configured to include a thin plate portion that can be mounted on a sample holder that is compatible with an observation apparatus used for the observation. The micro sample piece separated and extracted from the sample substrate can be fixed on the upper surface (surface parallel to the thickness direction) of the thin plate portion. With this method, it is possible to ensure an appropriate posture of the minute sample piece at the time of subsequent flattening of the required observation surface and at the time of observation of the observation surface by the observation apparatus.
[0031]
  Further, in the method for producing a planar sample described in the above [0030] paragraph, the sample holder is at least a side surface (thickness direction) of the thin plate portion on the sample stage at the time of separating and extracting the micro sample piece from the sample substrate. The surface perpendicular to the surface of the sample stage may be placed parallel to the upper surface of the sample stage. Thereby, the sample holder at the time of separating and extracting the micro sample piece can be held in a posture suitable for fixing the micro sample piece that has been separated and extracted on the sample holder.
[0032]
  In the method for producing a flat sample according to any one of the above paragraphs [0019] to [0022], the micro sample piece separated and extracted from the sample substrate includes a surface of the sample substrate and the sample substrate. It is possible to have a shape having at least a surface substantially perpendicular to the surface. In this way, the separated micro sample piece is provided with a surface substantially perpendicular to the original sample substrate surface, so that the observation surface obtained after the planarization process is substantially parallel to the sample substrate surface. Easy to do.
[0033]
  Further, in the method for producing a planar sample according to any one of the above paragraphs [0019] to [0022], the micro sample piece separated and extracted from the sample substrate is formed on the sample substrate. It may have a wedge shape having at least a surface, a surface substantially perpendicular to the surface of the sample substrate, and a surface inclined with respect to the surface of the sample substrate. In this way, the micro sample piece separated from the sample substrate is provided with a surface substantially perpendicular to the original sample substrate surface, so that the observation surface obtained after planarization is substantially parallel to the sample substrate surface. It becomes easy to make a smooth surface. Note that the provision of the inclined surface with respect to the sample substrate surface facilitates the separation and extraction of the minute sample pieces from the sample substrate by irradiation with the energy beam.
[0034]
  Further, in the method for producing a flat sample according to any one of the above paragraphs [0019] to [0022], at least a part of the micro sample piece fixed on the sample holder is irradiated with the energy beam to the sample. The step of processing into a flat sample having an observation surface substantially parallel to the surface of the substrate may be performed by irradiating the energy beam from a direction substantially parallel to the surface of the sample substrate included in the minute sample piece. it can. Thus, by irradiating the energy beam from a direction substantially parallel to the original sample substrate surface, an observation surface substantially parallel to the original sample substrate surface can be formed.
[0035]
  In the method for producing a planar sample according to any one of the above paragraphs [0019] to [0022], the energy beam may be a focused ion beam, a projected ion beam, or a laser beam. By using an ion beam as an energy beam for planarization, planarization with high processing accuracy can be realized. Further, when a laser beam is used, processing at a high processing speed can be realized although processing accuracy is slightly inferior.
[0036]
  Further, a micro sample piece separated and extracted from the sample substrate in order to observe a desired observation region of the sample substrate, wherein at least a part of the micro sample piece has an observation surface substantially parallel to the surface of the sample substrate. There is provided a micro sample piece characterized in that a flaky portion is formed. By forming the region including the observation surface in a flaky shape in this way, a flaky flat sample particularly suitable for TEM observation can be obtained.
[0037]
  In the micro sample piece described in the above paragraph [0036], the flaky portion may be formed at a plurality of portions having different depths from the surface of the sample substrate. In this way, by forming observation planes at a plurality of sites having different depths from the original sample substrate surface, it is possible to observe these plurality of sites at once..
[0038]
  Further, in the micro sample piece described in the above paragraph [0037], the thickness of the plurality of lamellar portions respectively formed at a plurality of portions having different depths from the surface of the sample substrate is substantially the same. Can do. Thus, by aligning the thicknesses of the plurality of lamellar portions, the observation conditions for TEM observation can be made uniform.
[0039]
  Further, in the micro sample piece described in the above paragraph [0036], the flaky portion may be formed at a plurality of sites having substantially the same depth from the surface of the sample substrate. As a result, it is possible to carry out observation of a plurality of sites in a substantially uniform depth region from the original sample substrate surface at once.
[0040]
  Furthermore, according to the present embodiment, at least a part of the micro sample piece separated and extracted from a part of the sample substrate fixed to the sample holder that can be mounted on the sample stage of the observation apparatus is substantially parallel to the surface of the sample substrate. There is provided a sample observation method characterized by providing a flaky portion having a simple observation surface and observing the flaky portion with the observation device. In this way, an observation result with a high resolution in the depth direction can be obtained by forming a portion including a desired observation surface into a thin piece and observing the thin piece.
[0041]
  Furthermore, according to the present embodiment, the sample holder that can be mounted on the sample stage of the analytical apparatus A flaky portion having an analysis surface substantially parallel to the surface of the sample substrate is provided on at least a portion of the micro sample piece separated and extracted from a part of the fixed sample substrate, and the flaky portion is analyzed by the analyzing apparatus. A sample analysis method characterized in that it is performed is provided. Thus, by forming a portion including a desired analysis surface into a thin piece and analyzing the thin piece, an analysis result with high depth resolution can be obtained.
[0042]
  In addition, the flaky sample manufacturing apparatus according to the present embodiment includes an ion beam irradiation optical system that irradiates a sample with an ion beam, and a secondary particle detection unit that detects secondary particles generated from the sample by irradiation with the ion beam. A sample stage on which the sample is placed, a sample holder holding means for fixing a micro sample piece obtained by extracting a part of the sample by irradiation of the ion beam, and the micro sample piece to the sample holder At least a transfer means for transferring upward and a gas supply source for forming an assist deposition film in the irradiation region of the ion beam, and in particular, the holding means is relative to the optical axis of the ion beam. The position of the sample holder can be changed around a vertical axis, and the minute sample piece fixed to the sample holder is positioned at least in the vertical and parallel directions with respect to the optical axis. It is characterized by being obtained configured to hold in.
[0043]
  Further, in the planar sample preparation apparatus described in the above paragraph [0042], the sample piece transfer means may be arranged in a biaxial direction that is parallel to and perpendicular to the optical axis of the ion beam irradiation optical system. The sample piece may be provided with a function of transferring. In this way, the sample piece transfer means is configured to be capable of biaxial transfer, so that the separated and extracted micro sample piece can be easily and accurately transferred onto the sample holder.
[0044]
  In the flat sample preparation apparatus described in paragraph [0042] above, a rotation axis parallel to the tilt axis of the sample stage perpendicular to the optical axis of the ion beam irradiation optical system is centered on the sample stage. Further, sample holder rotating means for rotating the sample holder can be additionally provided. As a result, the posture of the sample holder is set appropriately when the micro sample piece separated and extracted from the sample is fixed on the sample holder and when the micro sample piece fixed on the sample holder is planarized by ion beam irradiation. be able to.
[0045]
  In the planar sample manufacturing apparatus described in paragraph [0042] above, the sample stage is perpendicular to the sample substrate mounting portion for mounting the sample substrate and the optical axis of the ion beam irradiation optical system. A sample holder rotating means for rotating the sample holder about a rotating axis, and the sample holder rotating means can be attached to and detached from the sample stage independently from the sample substrate mounting portion. It can be configured. In this way, the sample holder rotating means can be attached to and detached from the sample stage independently from the sample substrate mounting portion, so that the sample holder rotating means can be detached from the sample stage and used for observation of a TEM or the like as it is. It can be used by being incorporated in the apparatus.
[0046]
  In the flat sample preparation apparatus according to any one of the above paragraphs [0042] to [0045], the sample holder rotating means includes the sample holder having two surfaces orthogonal to each other with the rotation axis as a top side. The holding means fixing part for fixing the holding means can be provided. By adopting such a configuration, the posture of the sample holder with respect to the optical axis of the ion beam irradiation optical system can be set appropriately.
  Further, in the planar sample manufacturing apparatus according to any one of the above paragraphs [0042] to [0045], the sample holder rotating unit includes a light receiving unit, a power source for driving the sample holder rotating unit, And a light emitting unit installed outside the sample chamber through a translucent glass wall for receiving the sample stage, and receiving a light emission signal from the light emitting unit at the light receiving unit. The sample holder rotating means can be driven and controlled by this received signal. By adopting this configuration, By controlling the transmission of the light emission signal from the light emitting section, the posture of the sample holder can be easily and accurately controlled.
[0047]
  Further, in the flat sample manufacturing apparatus described in the above paragraph [0046], the sample holder rotating means further includes a light emission control means for controlling the transmission of a light emission signal from the light emitting section. can do. By using such a light emission control means, the posture of the sample holder can be controlled easily and accurately from outside the sample chamber.
[0048]
  Further, in the flat sample manufacturing apparatus described in the above paragraph [0046], one of the two surfaces is configured to be set in a positional relationship substantially perpendicular to the optical axis of the ion beam irradiation optical system. Can be. As a result, the ion beam irradiation optical systemThe posture of the sample holder with respect to the optical axis can be set appropriately.
[0049]
  Further, in the planar sample manufacturing apparatus described in paragraph [0045] above, the sample substrate mounting portion may be a wafer cassette for holding a semiconductor wafer. As described above, the sample substrate mounting portion for mounting the sample substrate on the sample stage can be constituted by the wafer cassette used in the semiconductor device manufacturing process.
[0050]
  Further, the sample preparation apparatus of the present embodiment described above includes an energy beam irradiation optical system for irradiating the sample with an energy beam, and secondary information detection means for detecting secondary information generated from the sample by the irradiation of the energy beam. A sample stage on which the sample is placed, a sample holder holding means for fixing a micro sample piece obtained by separating and extracting a part of the sample by irradiation of the energy beam, and the micro A sample piece transfer means for transferring the sample piece onto the sample holder, and the holding means of the sample holder is centered on an axis perpendicular to the optical axis of the energy beam irradiation optical system. The surface of the sample holder for fixing the minute sample piece has a function capable of setting at least two positions parallel to and perpendicular to the optical axis. It may be a manufacturing apparatus of the flat sample that. As described above, the processing beam used for sample processing such as separation and extraction of a minute sample piece in the present embodiment is not limited to the ion beam described above, but is generally generically referred to as an energy beam. A processing beam can be used.
[0051]
  In the planar sample manufacturing apparatus described in paragraph [0050] above, the energy beam irradiation optical system can be a focused ion beam irradiation optical system, a projection ion beam irradiation optical system, or a laser beam irradiation optical system. . By using an ion beam as an energy beam for sample processing, planarization processing with high processing accuracy can be realized. When a laser beam is used, processing at a high processing speed can be realized although processing accuracy is slightly inferior.
[0052]
  Hereinafter, specific examples of the present invention will be described in detail.
[0053]
                              <Example 1>
  As an embodiment of the method for producing a flaky sample according to the present invention, a method for producing a planar sample for a specific region of a semiconductor wafer will be described with reference to FIGS. In addition, in order to clarify the processing procedure for sample preparation, the description will be divided into several steps.
[0054]
  Here, as a specific example of the sample preparation method according to the present invention, the interface between the plug and the substrate at a specific location is evaluated for a sample substrate (wafer) that has completed the plug step, which is one step of semiconductor device manufacturing. An example of the scene to be described. The plug process is a process for forming a conductive plug that vertically connects the upper conductive layer and the lower conductive layer. A plug is formed by embedding a conductive material such as polycrystalline silicon in a sub-μm diameter hole formed in the insulating layer. To do. If the buried plug is not in good contact with the underlying conductive layer, it becomes defective.
[0055]
  First, the position of a defective portion where there is a shape abnormality, foreign matter, defect, etc. on the wafer is detected by so-called wafer appearance inspection in which a wafer or a part of the wafer to be inspected is irradiated with light or an electron beam to inspect the defect. To do. For example, in the appearance inspection using an electron beam, the electrical contact state between the lower conductive layer and the plug can be measured, and a defective portion can be detected depending on the secondary electron emission state caused by the electron beam irradiation. In other words, when the conduction with the lower conductive layer at the ground potential is good, the plug is at the ground potential, so many secondary electrons are emitted and are observed as white spots on the secondary electron image. In the case of poor continuity, secondary electrons are not emitted from the plug or less, so that it is not observed as white spots. Therefore, the coordinate information of this poor conduction location is stored. There are various methods for storing the coordinate information. Here, the corresponding chip coordinates of the defective portion with reference to the wafer mark previously provided on the wafer, and the chip mark previously provided on the corresponding chip are used. As a reference, the coordinate information of the observation target location was obtained and stored in the calculation processing apparatus. The following processing is performed based on this coordinate information.
[0056]
  (A) Small sample piece manufacturing process
  This step is a step of producing a small sample piece of several μm square level including a defective portion without dividing the wafer.
[0057]
  First, the wafer is introduced into a sample preparation apparatus, and a desired defective portion is searched based on the coordinate information. Next, a mark is given by a laser beam or a focused ion beam (FIB) so that the defective portion can be identified. At this time, a mark (concave portion) deeper than the predicted depth of the defective portion is formed so as not to destroy the desired observation region. In this example, since the interface between the plug and the substrate is expected to be defective, as shown in FIG. 1A, the sample substrate 1 has a depth of about 1 μm, which is deeper than the interface depth determined from the design specifications. The I-shaped concave marks 2 and 2 ′ having a thickness of about 2 μm were placed so as to be orthogonal to each other. At this time, the sample stage is rotationally adjusted in advance so that the straight line 3 connecting the two marks 2 facing each other among the marks is parallel to the tilt axis of the sample stage. Next, as shown in FIG. 1B, rectangular holes 5 and 5 ′ are formed by FIB 4 on the outer sides of the two marks 2 on the extension of the straight line 3. The rectangular holes 5 and 5 ′ have an opening size of about 3 × 10 μm and a depth of about 15 μm. Next, a straight vertical groove 6 was formed in parallel with the straight line 3 at a distance of about 2 μm from the straight line 3. At this time, the vertical groove 6 is connected to one rectangular hole 5 ′ but not to the other rectangular hole 5. The minute gap portion 7 left between the vertical groove 6 and the rectangular hole 5 becomes a support portion for supporting the minute sample 9 later. In either case, in order to complete the processing in a short time, high-speed processing was performed with a large current FIB having a beam diameter of about 0.1 μm and a beam current of about 10 nA. The processing time required so far was about 5 to 7 minutes.
[0058]
  Thereafter, the sample substrate 1 is inclined (inclined by 15 ° in the present embodiment), and the width of the rectangular holes 5 and 5 ′ is about 2 μm apart from the straight line 3 by about 2 μm as shown in FIG. A groove 8 having a length of about 32 μm and a depth of about 15 μm is formed. An inclined groove 8 is formed by the FIB 4 incident obliquely with respect to the surface of the sample substrate 1 and intersects with the previously formed vertical groove 6 in a deep portion. By this step, the wedge-shaped micro sample piece 9 having a right triangular cross section having an apex angle of about 15 ° including a desired observation region is formed in a state where it is cantilevered by the support portion 7.
[0059]
  Next, as shown in FIG. 1D, the sample stage is returned to the horizontal position, and the probe 10 is brought into contact with the end of the sample piece 9 opposite to the support portion 7. This contact can be detected by a conductive state between the sample substrate 1 and the probe 10, a change in electric capacity, or the like. In addition, in order to prevent the sample piece 9 and the probe 10 from being damaged by excessive pressing of the probe 10, a function of stopping the driving of the probe 10 in the −Z direction (direction approaching the sample substrate) at the point of contact with Is provided. Next, in order to fix and connect the probe 10 to the sample piece 9 to be extracted, a gas for deposition is supplied to the contact portion between the probe 10 and the sample piece 9 and about 2 μm square including the tip of the probe 10 is provided. The area was irradiated with the FIB 4 while scanning, a deposition film 11 was formed in the FIB irradiation area, and the probe 10 and the micro sample piece 9 were fixedly connected via the deposition film 11. (See Fig. 1 (e))
  (A) Micro sample piece extraction process
  This step is a step of separating and extracting the minute sample piece 9 from the sample substrate 1. Specifically, as shown in FIG. 1E, the support portion 7 is irradiated with FIB 4 to be sputter removed. Since the support part 7 is 2 μm square and the depth is about 10 μm on the sample substrate surface, it can be removed by FIB scanning for 2 to 3 minutes. By this operation, the micro sample piece 9 is released from the support state on the sample substrate 1, and the micro sample is driven by driving the probe 10 in the + Z direction (direction away from the sample substrate) as shown in FIG. The piece 9 can be separated and extracted from the sample substrate 1.
[0060]
  Next, the micro sample piece 9 fixedly held at the tip of the probe 10 is moved onto the sample holder. However, in actuality, without moving the probe 10 greatly, the movement of the probe 10 is temporarily stopped in a state where the minute sample piece 9 is separated from the surface of the sample substrate 1, and then the sample stage is moved to move the probe 10. Move the sample holder side so that the sample holder comes directly below. According to this method, since it is not necessary to move the probe 10 greatly, it is not necessary to prepare a complicated mechanism for finely moving the probe 11 with a large stroke.
[0061]
  As shown in FIG. 1G, when the sample holder 12 comes almost directly below the probe 10, the movement of the sample stage is stopped, and the probe 10 is moved in the -Z direction while finely adjusting the probe 10 in the XY direction. To approach. It can be confirmed that the extracted micro sample piece 9 is in contact with the sample holder 12 by monitoring a change in potential of the probe 10 and a change in secondary electron intensity. Here, the vertical side surface 13 of the micro sample piece 9 is on the upper surface (surface perpendicular to the upper surface of the sample stage) 14 of the sample holder 12, and the upper surface (surface of the original sample substrate) 15 of the micro sample piece 9 is the sample. Contact is made so as to be parallel to the side surface 16 (surface parallel to the upper surface of the sample stage) of the holder 12. FIG. 2 (h) shows a state where both are in contact.
[0062]
  Next, as shown in FIG. 2 (i), the FIB 4 is brought into contact with the micro sample piece 9 and the sample holder 12 while introducing the deposition gas in a state where the micro sample piece 9 is in contact with the upper surface of the sample holder 12. To form deposition films 17 and 17 '. By this operation, the minute sample piece 9 can be fixed to the sample holder 12 via the deposition films 17 and 17 '. At this time, the irradiation area of the FIB 4 is about 2 × 3 μm, and the deposition films 17 and 17 ′ are attached across the upper surface 15 of the micro sample piece and the side surface 16 of the sample holder, thereby connecting the two. Is done. In this case, in particular, by placing the surface (original sample substrate 1 surface) 15 of the micro sample piece 9 and the side surface 16 of the sample holder on the same surface, the deposition films 17 and 17 ′ of the micro sample piece 9 are interposed. All sample holders 12 can be easily fixed. After this operation, the introduction of the deposition gas is stopped, and the deposition film 11 connecting the probe 10 and the minute sample piece 9 is sputtered away by FIB irradiation to separate the probe 10 from the minute sample piece 9. . By the above operation, a state in which the minute sample piece 9 is fixed on the sample holder upper surface 14 in a state of being separated from the probe 10 is obtained. (See Fig. 2 (j))
  In FIG. 2 (j), the case where the top surface (the surface of the original sample substrate) of the extracted micro sample piece 9 is flush with the side surface 16 of the sample holder 12 is illustrated. The fixed position is not limited to this. As another method, a method may be used in which the flat thin wall portion 18 to be formed is fixed so as to be positioned substantially at the center of the upper surface 14 of the sample holder. This alternative method will be described with reference to FIG. FIG. 14 is a diagram for explaining the positional relationship between the two when the minute sample piece 9 is fixed on the sample holder 12. The minute sample piece 9 is fixed to a substantially central portion of the upper surface 14 of the sample holder. Here, the thickness of the sample holder 12 is W, and the height of the minute sample piece 9 (the depth on the original sample substrate) is H. W is apparent when measured when the sample holder 12 is manufactured, and H can be determined by preliminary measurement with another sample manufactured under the same conditions.
[0063]
  Hereinafter, the fixing procedure in FIG. 4 will be described. First, the extracted micro sample piece 9 is gradually lowered (moved downward in the drawing) by driving in the Z-axis direction while being attached to the probe of the transfer means, and is brought into contact with the vicinity of the sample fixing surface 14 of the sample holder 12 ( (See FIG. 14 (a)). Confirmation of contact is performed using a method of judging from an image, a method of detecting electrical connection between the probe and the sample holder, etc., and simultaneously with the contact confirmation, a command to stop the descent of the probe is given to the probe drive mechanism, and the probe Stop descent. Next, the micro sample piece 9 is slightly raised to maintain the distance between the holder upper surface 14 and the vertical surface of the micro sample piece 9 to about several μm, and then the micro sample piece 9 is lowered again. The amount of the descent is set to the amount indicated by (H + (W / 2)) using the above W and H, so that the portion where the flat thin wall portion 18 is to be formed is approximately the center in the thickness direction of the sample holder upper surface 14. Can be located. However, the dimensions W and H satisfy the relationship of W> 2H, and the distance from the original sample surface of the flat thin wall portion 18 is sufficiently smaller than the dimension H.
[0064]
  The descending of the micro sample piece 9 is stopped according to the above relational expression, and then approached to the upper surface 14 of the sample holder. When the vertical surface of the micro sample piece 9 contacts the upper surface 14 of the sample holder, the approach is stopped. In this state, a deposition film is formed so as to span both the sample holder upper surface 14 and the minute sample piece 9, and the minute sample piece 9 is fixed to the sample holder upper surface 14.
[0065]
  By the fixing method of the micro sample piece 9 described above, a desired flat sample portion can be positioned at a substantially central portion of the sample holder upper surface 14 in the thickness direction. In this way, by setting the observation surface position almost at the center of the sample holder upper surface 14, even if the parallelism between the thin wall surface to be observed and the side surface of the sample holder is somewhat poor, the TEM sample stage is slightly in TEM observation. By adjusting the tilt angle, it is possible to correct the electron beam so that it is perpendicularly incident on the observation surface.
  (C) Planar sample preparation process
  Next, as shown in FIG. 2 (k), the sample holder 12 is rotated by 90 [deg.] To set the posture so that the upper surface 14 of the sample holder is parallel to the surface of the sample stage (see FIG. 2 (k)). There are various methods for rotating the sample holder 12 by 90 °. In short, the state is changed from a state in which the side surface 16 of the thin plate-shaped sample holder is installed in parallel to the upper surface of the sample stage to a state in which it is installed vertically. Any mechanism can be used. A specific mechanism will be described later in Example 4. Further, without using such a separate rotating mechanism, the sample stage on which the sample holder 12 is mounted is temporarily taken out into the atmosphere, and the posture is set so that the upper surface 14 of the sample holder is parallel to the upper surface of the sample stage. You can also fix it.
[0066]
  Finally, the TEM observation region of the minute sample piece 9 is thinned (FIG. 2 (l)). The micro sample piece 9 is sputter-etched by FIB irradiation, includes a desired observation region, is parallel to the surface (original sample substrate surface) 15 of the micro sample piece 9 and has a thickness of about 100 nm or less. The thin wall portion 18 is formed. Here, since the end surface (upper surface) 15 of the micro sample piece 9 is the surface of the original sample substrate, the thin wall surface substantially parallel to the original sample substrate surface is formed by performing FIB processing with the end surface 15 as a reference. The thin wall part (namely, plane sample) 18 which has can be formed.
[0067]
  The thinning method of the sample itself by FIB irradiation is already known, and the processing method of the present invention is the same as that. However, in the present invention, the thin wall surface is parallel to the sample substrate surface. This method is completely different from the above method, and is further different from the conventional method in that the sample to be thinned is a small sample piece extracted from the sample substrate. Moreover, although the manufacturing method itself of the thin sample (planar sample) parallel to the sample substrate surface has been conventionally known, it is completely different from the processing method according to the present invention in which only a portion necessary for observation is processed into a thin piece.
[0068]
  Finally, the sample holder 12 holding the sample thinned by the above procedure is mounted on the TEM stage. The mounting method on the TEM stage will be described with reference to FIG. As shown in FIG. 3A, when the sample holder 12 is mounted on the TEM stage so that the side surface 16 of the sample holder 12 is horizontal, the electron beam for observation 21 in the TEM has a thin wall portion (observation portion). ) 18 is transmitted substantially perpendicularly to the thin wall surface, and the transmitted electron beam 21 'forms a TEM image. From this TEM image, the internal structure of the thin wall portion (observation portion) 18 can be known. In FIG. 3A, the incident direction of the electron beam at the time of TEM observation is a direction from the top to the bottom of the paper, but the observation direction is not limited to this, and the bottom is upward from the bottom of the paper. It may be a direction.
[0069]
  Here, as an observation object of interest, an abnormal location due to a foreign substance or the like found on the bottom surface of the contact hole can be cited. In that case, the normal wall 19 and the abnormal cross section 20 are included in the thin wall portion 18 in FIG. The presence of 20 can be observed by TEM.
[0070]
  As shown in FIG. 3B, the TEM stage 31 includes a column 32, a grip 33, a tip holding unit 37, and the like. The sample holder 12 is installed in the opening 34 at the tip of the column 32, and a fixture 35, 36, 35 ′, 36 ′. At the time of TEM observation, the electron beam 21 enters the sample from the direction perpendicular to the paper surface in FIG. Needless to say, the means for fixing the sample holder 12 is not limited to the above method.
[0071]
  Here, another method for marking will be described. In general, the mark formed on the surface of the sample by FIB irradiation can be accurately identified as the target position when viewed from the surface, and is indispensable when a conventional cross-sectional TEM sample is manufactured. However, if the mark is attached on the surface or is a very shallow concave mark, the mark may disappear only by FIB scanning during surface observation or the like. If the mark on the surface disappears, the target position (XY coordinate position in the sample surface) is lost. In addition, since the mark is on the surface or the extreme surface of the sample, when forming a flat sample below the surface, information in the depth direction (Z coordinate) cannot be obtained, and determination of the Z coordinate position becomes difficult. . That is, in order to produce a local flat sample, it is necessary to form a mark different from the conventional mark.
[0072]
  Therefore, the following improved marking method was adopted in the method for producing a planar sample according to the present invention. The new marking method will be described with reference to FIG. FIG. 15A shows the surface of the sample 121 including the target position 120. First, the XY coordinates of the target position 120 are determined by using coordinates from a prior inspection apparatus. Next, marks 122A, 122B, and 122C are formed by FIB irradiation at three locations around the target position 120 so as to indicate the target position 120.
[0073]
  The marks 122A, 122B, and 122C for the above-described flat sample are manufactured by the following procedure. When FIB is scanned and irradiated to an appropriate region, a concave portion is formed, and the state of the bottom surface of the concave portion can be observed from the secondary electron image at the time of FIB scanning or stopping. That is, information in the depth direction can be obtained from the bottom surface of the formed recess. When the concave portion is formed by FIB and the bottom surface of the concave portion reaches the same plane as the target position, the FIB scanning is stopped. Next, the recess is filled with a deposition film by FIB assist deposition. The same operation is performed for the remaining two marks. By this operation, marks 122A, 122B, and 123C indicating the XY coordinates and Z coordinates of the target position can be formed. In FIG. 15A, the marks 122A, 122B, and 122C have a rectangular shape with projections 123A, 123B, and 123C in part, but the XY coordinates of the target position are further increased by these projections 123A, 123B, and 123C. It can be shown accurately. As an example of the size of the mark, the rectangular portion was 0.5 μm square and the protrusion was 0.1 × 0.2 μm.
[0074]
  FIG. 15B shows a state in which the target minute sample piece 9 is extracted and fixed to the sample holder upper surface 14 after the mark is formed, and a surface 124 having the same depth as the target observation surface is indicated by a broken line. Show. The bottom surfaces of the marks 122A, 122B, and 122C are on the same plane as the plane 124. Next, as shown in FIG. 15C, after the sample holder 12 is rotated by 90 °, a deposition film for protecting the flat surface 124 is formed on the side surface of the minute sample piece 9. Next, FIB is irradiated in parallel to the sample surface 126, and thinning processing is performed from the back surface of the micro sample piece 9. Reference numeral 125 indicates an incident direction of the FIB when the thin specimen 9 is subjected to thinning processing by FIB irradiation. The thin piece forming operation from the back side of the sample piece by FIB irradiation is continued while carefully observing the processed cross section. When the previously provided marks 122A, 122B, and 122C are exposed on the processed cross section, the processed cross section has just reached the target plane (observation surface) 124. That is, the surface 127 on one side of the target plane (observation surface) 124 is exposed. Finally, when the thin sample wall 9 is thinned by FIB from the surface 126 side of the minute sample piece 9, the thickness of the thin wall portion 18 is about 0.2 to 0.05 μm as shown in FIG. Finish processing. In FIG. 15D, in order to make the processing steps easy to understand, the viewing direction is changed so that the surface 126 side of the micro sample piece 9 in FIG. 15C can be seen. Since the thin wall portion 18 thus completed includes marks 122A, 122B, and 122C indicating the observation target position 120, these marks 122A, 122B, and 122C and the marks are provided for TEM observation. The observation target position 120 can be easily found based on the positions of the protruding portions 123A, 123B, and 123C. Note that the electron beam incident direction in TEM observation is indicated by an arrow 129.
[0075]
  In the above-described embodiment, the case where the marks are provided at three positions is shown. However, the marks may be installed in four directions surrounding the observation target position 120, or two marks may be formed in orthogonal directions. The feature of this method is that a concave portion having the same depth as that of the plane portion to be observed is provided, and the concave portion is filled with a deposition film and used as a mark.
[0076]
  In the method for producing a planar sample according to the present invention, since it is important to form a plane having a desired depth, the marking method will be described in more detail with a specific example. FIG. 16 is a perspective view showing a part of the small sample piece 9 fixed on the sample holder so that its internal structure can be easily understood. As an example of a sample, in a structure portion in which conductive plugs 131 are arranged side by side in an amorphous insulator 130 in a silicon semiconductor device, the conductive plug 131 has three stages of plugs 131A, 131B, and 131C having different diameters in series. It is shown that they are connected and each plug is formed by chemical vapor deposition. In the case of such a structure, sometimes the plugs connected in series have a high resistance or a contact failure may not be achieved. Causes of contact failure are non-contact due to failure of upper plug hole due to poor etching of upper plug hole, reduction of contact cross-sectional area due to shape failure, formation of insulating layer such as oxide film between plugs, mixing of insulating foreign matter However, actually observing the interface between the plugs is a clue to solving the problem. In the case of such an example, it is very convenient because a flat sample including a plug interface is prepared and observed with a TEM so that the connecting portion of the plug can be observed from the plug axis direction at a high magnification. For example, it is assumed that the plug 131A and 131B are determined to be abnormal using some kind of inspection means in advance, and the mark 122D is applied to observe the interface. The mark 122D was formed by irradiating the sample surface 132 with the FIB 133 from the vertical direction to form a rectangular recess and then embedding a deposition film. The bottom surface of the mark 122D was formed to be flush with the bottom surface of the plug 131B.
[0077]
  Next, as in FIG. 15C, with the sample surface 132 placed parallel to the FIB optical axis, the FIB 133 ′ is irradiated parallel to the sample surface 132 to excise the sample from its back surface. At this time, a protective film is required on the FIB incident surface, but the illustration thereof is omitted here. Reference numeral 134 indicates the direction of rear surface resection by FIB 133 '. When the cut surface is observed while cutting, the cross sections of the plugs 131A, 131′A, 131 ″ A are observed on the cut surface, and the bottom surface of the mark 122D is observed on the cut surface by further cutting. Here, the rear surface excision in the direction of reference numeral 134 is stopped, and then the excision is performed in the direction of reference numeral 135 from the sample surface 132 side, and the excision is performed when the remaining thickness 136 of the thin wall portion 18 reaches about 100 nm. As shown in FIG.16 (b), the thin-wall part 18 produced in this way is irradiated with the observation electron beam from the direction of the arrow indicated by reference numeral 137 or 137 'and observed by TEM. The plugs 131A, 131B, 131 ″ A, 131 ″ B, and the mark 122D ′ can be observed, and the interface of the plugs 131A, 131B of interest can be observed without making a mistake in the location. Here, if the material of the deposition film embedded in the recess of the mark is a heavy metal such as tungsten or platinum, it can be observed black on the TEM image, which is convenient because it can be clearly identified as a mark. In addition, the above-described mark structure and marking method make it possible to accurately produce a plane (thin wall portion) including an observation target position below the sample surface.
[0078]
  Further, if the TEM stage 31 has a structure that can be inserted into the above-described sample preparation apparatus, the minute sample piece 9 extracted from the sample substrate 1 can be directly fixed on the sample holder 12 held on the TEM stage 31. This is convenient because the manual work of mounting the sample holder 12 to which the minute sample piece 9 is fixed on the TEM stage 31 again is eliminated. This method will be described in detail later in Example 7.
[0079]
  In the above embodiment, the method for producing a flat sample has been described with emphasis. However, a thinned sample on an arbitrary slope with respect to the surface of the sample substrate 1 can be produced by the same operation as described above.
[0080]
                              <Example 2>
  In the present embodiment, a processing method for accurately finding the depth position of the required observation surface from the surface of the sample substrate with respect to the extracted micro sample piece 9 and producing a flat sample on the surface will be described.
[0081]
  FIG. 4 shows the processing steps of the sample preparation method according to this example. FIG. 4A shows a state in which the extracted micro sample piece 9 is fixed on the upper surface 14 of the sample holder 12 by the deposition films 17 and 17 ′, and reference numeral 22 is formed in the sample substrate. Reference numeral 23 denotes a top side formed by a sample substrate surface and a slope formed by FIB irradiation.
[0082]
  The purpose of this step is to thinly include the bottom surface of the contact hole in order to observe a foreign substance, a defect or the like existing at the bottom of the center row among the three rows of contact holes 22 on the micro sample piece 9. The purpose is to produce a wall (planar sample).
[0083]
  In FIG. 4B, first, in order to make it easy to produce a flat sample, the top side 23 of the minute sample piece 9 is cut off by FIB irradiation to form a surface 24 parallel to the upper surface 14 of the sample holder. Next, in order to grasp the position of the planar sample to be manufactured (that is, the position of the bottom surface 25 of the contact hole 22), a central section 26 of the endmost contact hole 22 'is formed.
[0084]
  Next, in FIG. 4C, the installation direction of the sample holder 12 is changed by 90 ° so that the upper surface 14 of the sample holder is perpendicular to the optical axis 27 of the FIB. When the central cross section 26 of the contact hole previously formed is observed in this state, the contact hole bottom surface 25 can be clearly observed from the side, and the distance from the sample surface 15 to the contact hole bottom surface 25 can be accurately grasped.
[0085]
  Furthermore, in FIG. 4D, the bottom surface of the contact hole is obtained by performing FIB scanning of the two rectangular portions 28 and 28 'with the bottom surface 25 of the contact hole formed in the cross section as a reference so as to sandwich the bottom surface 25. A planar portion (thin wall portion) 18 having a thickness of about 0.1 μm including 25 is formed. The thin wall portion 18 is a flat sample that is parallel to the sample substrate surface 15 and includes the contact hole bottom surface 25.
[0086]
  By preparing a flat sample by such a procedure and mounting the sample holder holding the flat sample on the TEM stage, TEM observation of the contact hole bottom surface 25 can be performed. As can be understood from the above description, according to the sample preparation method of the present invention, a planar sample at a desired depth position of a sample substrate can be easily manufactured while viewing a secondary electron image. Compared with the method of preparing a flat sample by polishing work, which has been performed with the skill, intuition, and time, it is possible to prepare a sample of only a necessary portion accurately and in a short time.
[0087]
                              <Example 3>
  A configuration example of a sample preparation apparatus suitable for use in realizing the sample preparation method shown in the first embodiment will be described with reference to FIG.
[0088]
  The sample preparation apparatus 40 according to the present embodiment detects secondary electrons and secondary ions generated by irradiation of the FIB irradiation optical system 42 and the FIB 43 used for processing and observing a sample substrate 41 such as a semiconductor wafer and an extracted sample. A secondary particle detector 44, a deposition gas supply source 45 for supplying a source gas for forming a deposition film in the irradiation region of the FIB, a sample stage 46 for mounting the sample substrate 41, and a sample substrate At least a sample transfer mechanism 47 for transferring a micro sample piece having a size of μm level extracted from the sample 41 onto the sample holder 12 is provided. These components are housed in a sample chamber 49 that is evacuated.
[0089]
  The sample chamber 49 further includes a sample holder 12 for fixing and holding a micro sample piece separated and extracted from the sample substrate 41, a holder cassette 58 for holding the sample holder 12, and the like. In addition, a display device 48 for displaying a secondary particle image, a calculation processing result, and the like based on a detection signal from the secondary particle detector 44 is also provided outside the sample chamber 49. In addition, a sample stage controller 52 for controlling the sample stage 46, an FIB controller 53 for controlling the FIB irradiation optical system 42, a controller 54 for the deposition gas supply source 45, a controller 55 for the secondary particle detector, a sample A control device 56 of the transfer mechanism is also provided, and these are controlled by the calculation processing device 57. The FIB irradiation optical system 42 can form the FIB 43 having a beam diameter of about 10 nm to 100 nm by passing ions emitted from the liquid metal ion source through a beam limiting aperture, a focusing lens, an objective lens, and the like. By scanning the FIB on the sample substrate 1 using a deflector, the sample substrate 1 can be processed in a shape corresponding to a scanning shape having a size of sub-μm to 10 μm.
[0090]
  Here, the detailed configuration of the FIB irradiation optical system 42 is not particularly concerned with the present invention, and thus the description thereof is omitted. In addition, the “processing” here refers to a concave portion forming processing by sputtering, a convex portion (film) forming processing by FIB assist deposition, or a shape changing operation of the sample substrate or the extracted sample piece by combining these. . For the deposition film formed by FIB irradiation, the probe 10 attached to the tip of the sample transfer means 47 is fixedly connected to the surface of the sample substrate 41, or a micro sample piece separated and extracted from the sample substrate 41 is placed on the sample holder 12. It is used for fixed mounting, and further used as a filler for filling the recess and a protective film for the sample surface.
[0091]
  The sample stage 46 is installed in a sample chamber 49 to be evacuated, and each component of the FIB irradiation optical system 42 is also held in a vacuum. The sample stage 46 can detachably mount a holder cassette 58 on which the sample holder 12 is mounted, and movement, tilting, and rotation in the XYZ triaxial directions are controlled by the sample stage control device 52.
[0092]
  Even if the sample substrate 41 is a large-diameter wafer, the sample transfer mechanism 47 has a high movement speed and a rough stroke with a large stroke in order to realize quick extraction of a small sample piece from an arbitrary position on the sample substrate. The moving unit 60 and the fine moving unit 61 having a slightly narrower stroke but high movement resolution are configured. The entire sample transfer mechanism 47 is installed independently of the sample stage 46, and the large movement of the sample piece extraction position (sampling position) is shared by the movement of the sample stage 46. The driving system in the XYZ directions of the coarse movement unit 60 is composed of a motor, a gear, a piezoelectric element, etc., and has a moving resolution of several μm with a stroke of about several mm. The fine movement portion 61 is required to be as compact and precise as possible so that mechanical interference with other components in the sample chamber 49 does not occur. Therefore, a bimorph piezoelectric element is used. Sub-μm moving resolution is achieved. A thinly sharpened molybdenum probe 10 having a diameter of about 50 μm is connected to the tip (moving end) of the bimorph piezoelectric element, and between the base end of the bimorph piezoelectric element and the moving end of the coarse moving part 60, It connected via the connecting rod 62. By applying an operating voltage to the bimorph piezoelectric element, the tip of the probe 10 slightly moves in the Z direction (up and down direction). Further, when the sample stage 46 is inclined, the sample transfer mechanism 47 is installed on the side where the surface of the sample substrate 41 is lowered with respect to the inclined axis 46 ′, and the holder cassette 58 on which the sample holder 50 is mounted is mounted on the same side. Set the location. With such an arrangement, it is possible to avoid mechanical interference such as collision between the sample transfer mechanism 47 and the surface of the sample substrate 1 when the sample stage 46 is inclined.
[0093]
  Japanese Patent Laid-Open No. 05-052721 “Method for separating a sample and method for analyzing a separated sample obtained by this separation method” (conventional example 2) is known as a related art relating to a transport mechanism similar to the configuration of the sample transport mechanism 47 described above. According to the conventional example 2, the transport mechanism for transporting the separated sample is constituted by three bimorph piezoelectric elements corresponding to the XYZ axes. However, the installation position of the transport mechanism is unknown and is the only one in the above publication. It can be read from FIG. 3 that the transport mechanism is installed on the stage. Thus, when the transfer means is installed on the sample stage, when the observation target part is the center of a wafer having a diameter of, for example, 300 mm, the movement stroke of the transfer mechanism tip is moved from the transfer mechanism installation position to the sample. Since it is much smaller than the distance to the center, there is a fatal problem that the moving end does not reach the center of the sample (observation target / sample piece extraction part). Furthermore, since the bimorph piezoelectric element operates such that the other end (moving end) is bent and finely moved with one end (base end) as a fulcrum, the other end draws an arc according to the application of the operating voltage. In the movement in the (horizontal plane), the transport mechanism tip (probe tip) does not move linearly in one direction only by the operation of one bimorph piezoelectric element. Therefore, in order to move the tip of the probe to a desired position by using bimorph piezoelectric elements in all three axial directions, very complicated control must be performed so that the three bimorph piezoelectric elements correct each other's movements. It has the difficulty of not becoming. According to the configuration of the transfer mechanism 47 according to the present invention, such difficulties can be solved.
[0094]
  The sample holder 12 used in this example is a semi-circular metal thin plate 12a as shown in FIG. 6A, which is a molybdenum semi-circular plate having a diameter of 2.9 mm and a thickness of 40 μm. The micro sample piece 9 extracted is mounted on the upper surface 14 in the diameter direction of the semicircular disk. FIG. 6A shows a case where three micro sample pieces 9 are mounted. Thus, the sample holder 12 carrying the plurality of sample pieces 9 is placed on the sample stage in the TEM sample chamber, and a plurality of samples can be observed by TEM one after another by simply evacuating the sample chamber once. . Further, the sample holder 12 is not limited to the above shape, and may be a strip-shaped thin plate 12b as shown in FIG. The point is that the shape can be mounted on the sample stage 46, the TEM stage, or the SEM stage of the processing apparatus 40 without interfering with the beam irradiation during FIB processing, TEM observation, and SEM observation, as long as the micro sample piece 9 can be mounted.
[0095]
  The holder cassette 58 is a jig for holding the sample holder 12 and is mounted on the sample stage 46 as shown in FIG. 7A, for example. The sample stage 46 indicates a general-purpose large stage capable of mounting a large-diameter wafer or a small stage capable of mounting a device chip of several mm square. The number of sample holders 12 mounted on one holder cassette 58 may be one or more, and the number of holder cassettes 58 that can be set on the sample stage 46 may be one or more. In the example of FIG. 7A, two sample holders 12 are mounted on one holder cassette, and three or two micro sample pieces 9 are fixed to each sample holder 12. Five observation samples can be obtained by exchanging the cassette 58 once. Moreover, although the example of the strip-shaped sample holder was shown here, the shape of the sample holder is not particularly limited to the strip shape. Furthermore, the holder cassette 58 can be exchanged while maintaining the vacuum in the sample chamber 49 by the exchange mechanism 59 using the sub-chamber 59a and the operation rod 59b of FIG. The holder cassette 58 taken out of the sample chamber 49 changes the sample holder 12 in order to change the direction of the minute sample piece 9. 7B is a diagram showing the positional relationship between the sample holder 12 and the holder cassette 58 before the sample holder 12 is replaced, and the right diagram shows the sample holder 12 shown in the left diagram 90 for forming a thin wall portion. It is a figure which shows the state which rotated and fixed. After replacing the sample holder, the holder cassette 58 can be placed on the sample stage 46 again, and FIB processing for forming the thin wall portion can be performed. Such a change in the orientation of the sample holder 12 may be performed in the sample chamber using an operation rod. In the present embodiment, the case where a fixing method using a probe and a deposition film is employed when separating and extracting a micro sample has been described. However, the method for extracting a micro sample is not limited to the above method. For example, you may carry out using the mechanism which pinches and extracts like tweezers.
[0096]
                              <Example 4>
  As described above, the orientation of the sample holder differs by 90 ° between fixing the extracted sample piece 9 to the sample holder 12 and processing the thin wall. When the extracted sample piece 9 is fixed to the sample holder 12, the upper surface (sample piece mounting surface) of the sample holder 12 is placed in a parallel relationship with the optical axis of the FIB irradiation optical system, and is placed in a vertical relationship during thin wall processing. In the above-described third embodiment, the 90 ° attitude change of the sample holder 12 is performed by fixing the extracted sample piece 9 to the sample holder 12 and then taking the holder cassette 58 out into the atmosphere and rotating the sample holder 12 90 ° to fix it. This is realized by the simplest method and apparatus configuration in which the sample is put in the sample chamber 49 again. However, this method may be accompanied by a problem that the valuable sample piece 9 is damaged due to an unexpected accident when the sample holder 12 is handled. Therefore, in the fourth embodiment, a sample holder rotating tool 70 that rotates about an axis parallel to the tilt axis of the sample stage is provided in a part of the sample stage. The configuration example will be described with reference to FIGS.
[0097]
  The sample holder rotating tool 70 is configured by providing a part of the cylindrical member 71 with a four-divided cylindrical portion 75 having two surfaces 73a and 73b orthogonal to each other with the central axis 72 of the cylindrical member as a top side. One of the surfaces (here, 73a) is used as an installation surface of the sample holder 12.
[0098]
  When the sample piece 9 extracted from the sample substrate is fixed to the sample holder 12, the surface of the extracted sample piece 9 (the surface of the original sample substrate) is set to be perpendicular to the upper surface (sample piece mounting surface) of the sample holder 12. Therefore, the sample holder installation surface 73a is kept stationary so as to be parallel to the sample stage surface, and the extracted sample piece 9 is fixed to the upper surface of the sample holder 12. At this time, the sample holder installation surface 73 a is in a positional relationship perpendicular to the FIB optical axis 73.
[0099]
  In order to more clearly show the orientation of the sample holder 12 at this time and the positional relationship with the FIB optical axis, FIG. 8B shows a cross section 74 passing through the sample holder 12 and perpendicular to the central axis of the sample holder rotating tool 70. Sectional drawing seen from the direction of arrow A is shown. The sample holder 12 is arranged and set so that the side surface 16 thereof is flush with the sample holder installation surface 73 a of the four-divided cylindrical portion 75 and the sample piece 9 is positioned in the vicinity of the FIB optical axis 73. Next, after fixing the extracted sample piece 9 to the upper surface of the sample holder 12, the sample holder rotating tool 70 is rotated by 90 ° by an appropriate rotating means (not shown), and the sample holder 12 is moved as shown in FIG. The posture is changed so that the side surface is substantially parallel to the FIB optical axis 73. FIG. 9B is a view of a cross section 74 ′ passing through the sample holder 12 as viewed from the direction of the arrow B. By rotating the sample holder mounting surface 73a by 90 °, the upper surface (sample piece mounting surface) of the sample holder 12 is in a positional relationship perpendicular to the FIB optical axis 73, and the surface of the sample piece 9 (original sample substrate surface) is FIB optical. The positional relationship is parallel to the axis 73. In this state, the sample piece 9 is subjected to FIB processing for forming a thin wall portion. Although FIG. 9 illustrates the case where there is one sample holder 12 attached to the sample holder rotating tool 70, the number is not limited to one.
[0100]
  Next, the rotating means of the sample holder rotating tool 70 will be described with reference to FIG. The columnar member 71 is connected to rotational driving means 80 such as a motor, a power source 81, a light receiver 82, and the like, and an optical signal 85 from a light emitter 84 outside the vacuum chamber 49 is passed through the vacuum partition glass 86 (or The light receiver 82 receives the optical signal from the light emitter installed in the vacuum chamber 49 directly, receives the output signal from the light receiver, the power supply 81 is turned on, and the rotation driving means 80 is operated. The sample holder installation surface 73a is rotated by 90 °. By using this optical signal 85, the surface of the sample holder can be easily installed from the outside of the vacuum chamber 49 without making troublesome wiring to the sample holder rotating tool 70 installed on the sample stage 46 that rotates, tilts and moves in plane. 73a can be rotated. Therefore, even when the potential of the sample stage 46 is not a ground potential, for example, the posture of the sample holder can be changed (rotated by 90 °). Further, since a troublesome wiring portion is unnecessary, the sample holder rotating tool 70 can be easily attached to and detached from the sample stage 46, and this can be taken out of the vacuum vessel 49 while the holder rotating tool 70 as a whole is integrated. . In order to prevent excessive rotation of the cylindrical member 71, a stopper is used to stop the rotation in a state where the sample holder installation surface 73a and the surface 73b perpendicular to the sample holder installation surface 73b are parallel to the sample stage surface at the respective rotation positions. 87 is provided.
[0101]
  The sample holder rotating tool 70 equipped with the sample holder to which the extracted sample piece is fixed can be transferred onto the SEM stage, and can be rotated by an optical signal in the SEM sample chamber, so that the viewpoint of the extracted sample piece is changed. Can be observed. In addition, since the sample holder can be separated from the cylindrical member 71 and mounted on the tip portion of the TEM stage, the small sample holder is placed on the TEM stage after finishing the flat processing (formation of the thin wall portion) of the extracted sample piece. The detailed work of transferring is unnecessary, and the flat sample can be easily transferred onto the TEM stage and observed.
[0102]
                              <Example 5>
  The present embodiment relates to a method for manufacturing a flaky sample, and is an example of a processing method in the case where the planar region to be observed is not only one plane as shown in the second embodiment. One of the features of the processing method according to the present invention is that a plurality of planar sample portions close to each other at a μm level can be formed, and a plurality of planar sample portions having different depths from the sample substrate surface can be produced. . (A) of FIG. 11 is a perspective view for explaining a sample having a plurality of planar sample portions with different depth positions fixed on the sample holder, and the direction of electron beam passage during TEM observation is parallel to the paper surface. The vertical direction. On the other hand, FIG. 11B is a view of a processed flat sample viewed from a direction perpendicular to the sample substrate surface 15 and shows a processing procedure. FIG. 11C is a diagram for clearly showing the position of the flat sample portion after processing.
[0103]
  In FIG. 11A, the micro sample piece 9 fixed to the upper surface 14 of the sample holder 12 is parallel to the sample substrate surface 15 and has a plurality of different depths (distances from the sample substrate surface to the planar sample portion). Planar sample portions 101a, 101b, and 101c are formed.
[0104]
  The processing method is shown below. For the sample (corresponding to (b) of FIG. 4) in which the top side of the wedge-shaped micro sample piece 9 fixed to the upper surface 14 of the sample holder is deleted by FIB scanning, the desired observation region is as shown in (b) of FIG. Rectangular recesses 102a, 102b, 102c, 102d, 102e, and 102f are formed by FIB scanning so as to remain as thin wall portions (planar portions) 101a, 101b, and 101c. (C) in FIG. 11 is a plane sample having three plane portions 101a, 101b, and 101c formed. When TEM observation is performed, the electron beam 103 is irradiated to each of the three plane portions almost perpendicularly for observation. it can. Here, the thicknesses of the flat portions 101a, 101b, and 101c are approximately the same, approximately 100 nm, so that the same level of image contrast can be obtained during TEM observation, the distance between them is approximately 2 μm, and the depth from the substrate surface 15 is The positions were 1.0 μm, 0.2 μm, and 0.4 μm, respectively, and the opening widths were 5 μm, 5 μm, and 12 μm, respectively. (In the drawing, the vertical and horizontal dimension ratios are exaggerated.) Of course, the production of a planar sample need not be limited to these numerical examples and dimension examples.
[0105]
  When observing a sample in which such a plurality of flat portions are formed by a TEM, a portion having different depth positions is observed for a plurality of regions that are close to each other on the order of μm even though they are one minute sample piece. In this example, the structure observation on the uppermost layer surface of the contact hole bottom surface or a relatively deep layer surface can be performed together. In the conventional method for producing a planar TEM sample, since only a planar sample portion at the same depth position can be created from one sample, structural observations at different depth positions in the vicinity of the observation region of interest are combined. Although it was impossible to carry out, they could be realized by the processing method according to the present invention.
[0106]
                              <Example 6>
  Still another feature of the sample preparation method according to the present invention is that a plurality of plane portions close to the μm level can be formed on the sample substrate, and the plurality of plane portions have different inclination angles with respect to the sample substrate surface. It is also possible to produce a sample. 12A is a perspective view showing a state in which a sample piece 9 having a plurality of plane portions 110a, 110b, 110c having different inclination angles with respect to the sample substrate surface 15 is fixed on the upper surface 14 of the sample holder 12. FIG. 11 (b) is a diagram showing a processing region viewed from a direction perpendicular to the sample substrate surface 15, and FIG. 11 (c) is a plurality of planar portions formed in different inclination directions. A sample piece 9 having 110a, 110b, 110c is shown.
[0107]
  The processing procedure is the same as the steps from (a) in FIG. 1 to (j) in FIG. 2 until the wedge-shaped minute sample piece 9 is extracted from the sample substrate and fixed to the sample holder 12. The posture is changed so that the upper surface 14 of the sample holder 12 is perpendicular to the FIB optical axis. As shown in FIG. 12B, the regions 111a, 111b, and 111c are substantially perpendicularly triangular, trapezoidal, and triangular. Recesses having shapes are formed, and flat portions 110a, 110b, and 110c having different inclination angles with respect to the sample substrate surface 15 are formed as shown in FIG.
[0108]
  FIG. 13 is an explanatory diagram for TEM observation. In particular, FIG. 13A illustrates a method of placing a sample holder on a TEM stage, and FIGS. 13B and 13C illustrate a TEM observation method. FIG. In FIG. 13A, the sample holder 12 that holds and holds the planarized fine sample piece is fixedly installed at a predetermined position on the TEM stage 31 by using a pressing tool 35 ', a screw 36', and the like. Here, the orientation of the sample holder 12 is set so that the upper surface 14 of the sample holder 12 is perpendicular to the rotation axis 38 of the TEM stage 31.
[0109]
  Since the planar portions 110a and 110c of the planarized sample in the present embodiment have an inclination angle with respect to the sample substrate surface, TEM observation cannot be performed with an electron beam incident perpendicularly to the sample substrate surface. Therefore, by using the rotation of the TEM stage 31 around the rotation axis 38, the TEM stage 31 is rotated and adjusted so that the electron beam is perpendicularly incident on the flat portions 110a and 110c. For example, when observing the flat portion 110a, the TEM stage 31 is rotated and adjusted as shown in FIG. 13B so that the sample holder 12 is tilted so that the electron beam 103 is perpendicularly incident on the flat portion 110a ( In practice, adjustment is performed while viewing the TEM image so that the contrast becomes good. Also, when observing the flat surface portion 110c, as shown in FIG. 13C, the TEM stage 31 is rotated and adjusted to incline the sample holder 12, so that the TEM image of the flat surface portion 110c is adjusted to be clear. .
[0110]
  In the above embodiment, the micro sample piece extracted from the sample is described as having a wedge shape, but the fine sample piece to be extracted is not limited to the wedge shape, and may be a trapezoidal shape as shown in FIG. . In the case of this trapezoidal sample piece, it is more suitable to produce a flat sample at a deep position from the original sample substrate surface.
[0111]
  By the operation as described above, the flat portions 110a and 110c having different inclination angles with respect to the sample substrate surface 15 and the flat portions 110b parallel to the sample substrate surface 15 can be observed by TEM. Such a flattened sample could not be produced at all by a conventional method such as polishing, but it was realized by the processing method according to the present invention, and TEM observation evaluation became possible.
[0112]
                              <Example 7>
  The present embodiment is another configuration example of the flat sample preparation apparatus, and will be described below with reference to FIGS. The sample preparation apparatus according to the present embodiment is an example in which the sample stage is a side entry type. A sample to be observed is a small sample of several mm square or less, such as a semiconductor chip, and is mounted on a sample mounting stage (referred to herein as a first sample stage), and a micro sample including a target portion from this sample A series of processing operations are performed in which a piece is extracted and fixed to a sample holder on a stage that is also used as a TEM or SEM (herein referred to as a second sample stage) and finished into a flat thin sample for TEM or a flat sample for SEM. It can be executed by inserting and removing the first and second sample stages, and the main feature is that the planar TEM sample and the bottom SEM sample prepared by this sample preparation apparatus can be immediately observed by being inserted into the TEM or SEM while being mounted on the sample stage. is there.
[0113]
  In FIG. 17, the configuration of the sample preparation device 40 a is composed of an FIB irradiation optical system 42, a secondary particle detector 44, a deposition gas supply source 45, an FIB control device 53, a deposition gas supply source control device 54, and secondary particles. The part of the control device 55 of the detector is the same as that shown in the third embodiment (FIG. 5). The sample stages 142 and 144 are side entry type, and the sample 41 ′ and the minute sample piece 9 can be taken in and out without releasing the vacuum in the sample chamber 49. The main feature is that the first sample stage 142 on which the original sample 41 ′ for separating and extracting the minute sample pieces is mounted and the second stage 144 for fixing the extracted minute sample pieces and performing the finishing process for each observation apparatus are separated. is there. The sample stages 142 and 144 can be driven by fine movement mechanisms 143Y and 143Z in the Y and Z directions and the shaft rotation mechanism 143R provided in the sample stage drive unit 143, and can be driven and controlled by the sample stage controller 52 '. The sample stages 142 and 144 can be inserted through a valve provided in the sample stage driving unit 143 without releasing the vacuum in the sample chamber 49. This side entry type vacuum holding mechanism is a well-known technique. The second sample stage is also used as a sample stage for TEM or SEM, and the sample stage is left in the TEM or SEM as it is without removing the flat TEM sample or the flat SEM sample prepared by the flat sample preparation apparatus from the sample stage. And can be observed.
[0114]
  The sample transfer mechanism 47 for transferring the micro sample piece 9 from the original sample 41 ′ is composed of a side entry type probe stage 140 having the probe 10 at the tip and its drive mechanism 141, and the probe 10 is exchanged due to breakage or the like. When it is necessary, as with the sample stage, it is possible to insert and remove the stage portion without opening the vacuum in the sample chamber, and the probe can be easily replaced in a short time. The driving mechanism 141 is provided with driving means 141X, 141Y, and 141Z in the X, Y, and Z directions, respectively, and moves with high accuracy when the minute sample piece 9 is connected to the probe 10 or transferred to the sample holder 12. This is controlled by the sample transport mechanism controller 56 '.
[0115]
  In the example of FIG. 17, a standby portion 145 of the sample stages 142 and 144 is provided, and when one of the sample stages is in the sample chamber 49, another sample stage can be kept on standby, and the tip thereof The part can be in a vacuum state or an atmospheric pressure state, and is characterized by a structure that does not adhere dust and the like and a structure that prevents damage to the sample due to unexpected contact with foreign matter or the like.
[0116]
  Further, in the sample preparation device 40a, the sample stage control device 52, the FIB control device 53, the deposition gas supply source control device 54, the secondary particle detector control device 55, and the sample transport mechanism control device 56 are subjected to calculation processing. Controlled by the device 57, the micro sample piece, the probe 10, etc. can be displayed on the display 48 as secondary particle images of secondary electrons, secondary ions, etc., and there are devices that can monitor the progress of sample preparation in an enlarged manner. is doing.
[0117]
  FIG. 18 shows the detailed structure of the first sample stage 142 and the second stage 144. In FIG. 18A, the first sample stage 142 includes a sample stage 150 on which the original sample substrate is placed, a rotation adjustment mechanism for correcting the rotation of the sample stage 150 perpendicular to the stage axis, and adjustment in the axial direction. And an axial position adjustment mechanism for performing the above. Reference numeral 151 denotes a rotation adjustment knob for adjusting the rotation, and reference numeral 152 denotes an axial position adjustment knob for adjusting the axial position. The sample stage can be transported by grasping the grip portion 153 including the rotation adjustment knob 151 and the axial position adjustment knob 152 by hand. Further, the sample stage 150 and the grip portion 153 are connected by a rod-like connecting portion 154, and a support portion 155 for absorbing the vibration and vibration of the sample stage 142 and facilitating shaft rotation is provided at the tip thereof. ing. Further, the second sample stage 144 shown in FIG. 17B is a stage that also serves as a TEM or SEM, and has a grip portion 153 ′, a rod-shaped portion 154 ′, and a support portion 155 ′. Can hold the sample holder 12. FIG. 18C shows details of the tip of the second sample stage 144, and particularly shows a fixing means for the sample holder 12. The sample holder 12 is held by fixing jigs 156 and 156 ′ using screws or the like. Is done. At this time, if the upper surface of the sample holder 12 is flush with the axis of the sample stage, the desired observation area of the minute sample piece 9 is not greatly deviated from the field of view of the TEM when the sample stage 144 is introduced into the TEM. Can be found. Furthermore, the sample holder 12 mounted on the second sample stage 144 may have a semicircular shape having a flat portion 157 in a part as shown in FIG. 18D, in addition to the shape shown in FIG. The advantage of this shape is that by providing a portion in surface contact with the flat portion 157 on the sample stage side, the upper surface of the sample holder 12 can be easily placed parallel to the rotation axis of the sample stage, and a conventional TEM stage ( For example, it can be installed on FIG. 3 (b) and can be observed with another TEM having a different length from the grip portion to the sample portion.
[0118]
  FIG. 19 is a diagram for explaining how to use the second sample stage. The second sample stage 144 needs to change the incident direction of the FIB when fixing the extracted small sample piece 9 on the sample holder 12 and when finishing the processing corresponding to TEM or SEM. The shaft rotation must be corrected. FIG. 19A shows the orientation when the extracted micro sample piece 9 is fixed to the sample holder 12. The incident direction of the FIB 4 is the vertical direction of the page. FIG. 19B is an enlarged view of the sample holder 12 portion to clarify the directional relationship between the energy beam 4 ′, the sample holder 12, and the minute sample piece 9. The surface of the original sample in the minute sample piece 9 is perpendicular to the energy beam axis. After fixing the small sample piece 9, the surface of the original sample in the sample piece 9 is set parallel to the FIB 4 by rotating the grip portion 153 ′ of the 90 ° sample stage on the spot without pulling out the sample stage 144. it can. FIG. 19C shows the state of the sample stage 144 after 90 ° rotation. FIG. 19 (d) is an enlarged view of the sample holder 12, and the sample holder 12 is rotated by 90 ° compared to when the micro sample piece is fixed. When the second sample stage 144 is rotated by 90 °, a mark 158 indicating the direction of the sample holder 144 is written on a part of the grip portion 153 ′, so that the direction of the thin wall portion of the sample preparation apparatus can be determined. It can be confirmed at a glance from the outside, and the minute sample piece 9 is not damaged by irradiating unnecessary FIB. Further, this mark 157 also indicates which direction the observation sample surface is facing when the second sample stage 144 is introduced into the TEM or SEM, so that it does not enter the TEM or SEM in the wrong direction.
[0119]
  Further, as shown in FIG. 20, the planar sample of the local region prepared according to the procedure of FIGS. 1 and 2 is pulled out from the sample preparation device 40 and inserted into the TEM 160 or SEM 161 as shown in FIG. Thus, since it is possible to shift to the planar TEM observation or the planar SEM observation without changing the small sample holder 12 or touching the minute sample piece 9 itself, it is a great advantage that it is not necessary to give an excessive mental tension to the operator. It is.
[0120]
  In the above-described embodiments, the focused ion beam has been described as the beam to be processed. However, this is not limited to the focused ion beam, and processing of the reduced shape of the opening pattern provided in the stencil mask is performed collectively. It may be a projection ion beam that can be performed by a laser beam, or may be based on an energy beam such as a laser beam that is not as good as a focused ion beam or a projection ion beam but has a high processing speed. In these cases, a sample having a surface parallel to the sample table in a sample placed on a sample table that is basically perpendicular to the optical axis of the energy beam is called a flat sample. The apparatus configuration is the same as that of FIG. 5 regardless of whether the apparatus uses a projection ion beam or a laser beam. Basically, the optical system is replaced, and in the case of a laser beam, the detection unit is reflected. A light receiver may be provided.
[0121]
  In the above embodiment, the planar TEM sample has been described with emphasis. However, the planar sample for SEM observation is almost the same, but in the case of SEM observation, it is not necessary to process into a thin wall. Only exposure is required. By this method, it is possible to form an observation sample having a certain plane coordinate and a certain depth for SEM observation. Furthermore, the planar sample formed in this way is not only so-called observation, but also energy dispersive X-ray spectroscopy (EDX), Auger electron spectroscopy (AES), secondary ion mass spectrometry (SIMS), etc. in the observation plane. Needless to say, the present invention can also be applied to elemental analysis.
[0122]
  In the present specification, an example of observation with a transmission electron microscope (TEM) has been described as an example of observation with a transmission electron microscope. However, the present invention is also applicable to observation with a scanning transmission electron microscope (STEM). It goes without saying that it is possible.
[0123]
【The invention's effect】
  By using the method and apparatus for producing a flaky sample according to the present invention, a flat sample (flaky sample) including a desired observation region in the sample substrate is produced without subdividing the sample substrate such as a wafer. In particular, it is possible to easily produce a sample having a plurality of planar sample portions for portions having different depths from the surface of the sample substrate from a plurality of regions in the sample substrate adjacent to each other.
[Brief description of the drawings]
FIG. 1 is a view for explaining the first half of a processing step in a method for producing a flaky sample according to an embodiment of the present invention.
FIG. 2 is a view for explaining the latter half of the processing step in the method for producing a flaky sample according to an embodiment of the present invention.
FIG. 3 is a diagram for explaining a state at the time of TEM observation of a flaky sample manufactured through the processing steps shown in FIGS. 1 and 2;
FIG. 4 is a view for explaining a processing procedure in a method for producing a flaky sample according to another embodiment of the present invention.
FIG. 5 is a diagram showing a configuration example of a flaky sample manufacturing apparatus according to an embodiment of the present invention.
6 is a diagram showing a specific configuration example of a sample holder 12 in the flaky sample manufacturing apparatus shown in FIG. 5;
7 is a view for explaining an arrangement relationship between a sample holder 12 and a holder cassette 58 in the flaky sample manufacturing apparatus shown in FIG. 5;
FIG. 8 is a diagram showing a specific configuration example of a rotation mechanism of a sample holder 12 in a flaky sample manufacturing apparatus according to another embodiment of the present invention.
9 is a view for explaining the operation of the sample holder rotating mechanism 70 shown in FIG. 8. FIG.
10 is a diagram illustrating a specific configuration example of a unit that rotationally drives the sample holder rotation mechanism 70 illustrated in FIG. 8;
FIG. 11 is a view for explaining a processing procedure in a method for producing a flaky sample according to still another embodiment of the present invention.
FIG. 12 is a view for explaining a processing procedure in a method for manufacturing a flaky sample according to still another embodiment of the present invention.
13 is a diagram for explaining a state at the time of TEM observation of a flaky sample manufactured through the processing steps shown in FIG. 12;
FIG. 14 is a view for explaining a method for fixing a removed micro sample piece to a sample holder, in particular, in the method for producing a flat sample according to the present invention.
FIG. 15 is a view showing an embodiment of a method for producing a planar sample according to an embodiment of the present invention, and more particularly a view for explaining marking.
FIG. 16 is a view for more specifically explaining marking, in particular, in the method for producing a planar sample according to one embodiment of the present invention.
FIG. 17 is a diagram showing a configuration example of a sample preparation apparatus according to an embodiment of the present invention.
18 is a diagram showing a specific configuration example of a sample stage in the sample manufacturing apparatus shown in FIG.
FIG. 19 is a diagram for explaining the installation relationship of the sample stage in the case where a flat sample is manufactured using the sample manufacturing apparatus shown in FIG.
20 is a diagram for explaining the cooperation between the sample preparation apparatus illustrated in FIG. 17 and a TEM or SEM.
[Explanation of symbols]
        1 ... sample substrate, 4 ... FIB (focused ion beam),
        5, 5 '... rectangular hole, 6 ... vertical groove,
        8 ... inclined groove, 9 ... minute sample piece,
      10 ... probe, 11 ... deposition film,
      12 ... Sample holder, 14 ... Upper surface of sample holder,
      15 ... Sample substrate surface, 16 ... Sample holder side surface,
      17, 17 '... deposition film, 18 ... thin wall,
      21: Incident electron beam, 21 ': Transmitted electron beam,
      19 ... normal cross section, 20 ... abnormal cross section,
      31 ... TEM stage, 46 ... Sample stage,
    101a, 101b, 101c ... planar sample part,
    110a, 110b, 110c... Planar sample part.

Claims (29)

A sample stage on which the sample is placed;
A sample chamber in which the sample stage is installed and capable of being evacuated;
An irradiation optical system for irradiating the sample with an ion beam;
A holder capable of holding at least one sample piece separated from the sample by irradiation of the ion beam;
A transfer means provided in the sample chamber for placing the sample piece on the holder;
A holder holding member for holding at least one of the holders;
Means for changing a rotation angle of the holder holding member with respect to the ion beam. A tiltable sample stage on which the sample is placed;
A sample chamber capable of being evacuated in which the sample stage is installed;
An irradiation optical system for irradiating the sample with an ion beam;
A holder capable of holding a sample piece separated from the sample by irradiation of the ion beam;
Means for extracting the sample piece from the sample in the sample chamber and transferring it to the holder;
Means for changing the rotation angle of the holder with respect to the tilt axis of the sample stage. A first stage for placing a sample;
A sample chamber in which the first stage is installed;
An irradiation optical system for irradiating the sample with an ion beam;
A second stage for placing a sample piece extracted from the sample;
Transfer means for placing the sample piece on the second stage;
Means for changing the tilt angle of the second stage with respect to the ion beam. A sample stage on which the sample is placed;
A sample chamber in which the sample stage is installed;
An irradiation optical system for irradiating the sample with an ion beam;
A holder capable of holding a sample piece separated from the sample by irradiation of the ion beam;
Means for extracting the sample piece from the sample and transferring it to the holder;
Means for rotating the holder with respect to the incident direction of the ion beam. A sample stage on which the sample is placed;
A holder for placing a sample piece extracted from the sample;
An irradiation optical system for irradiating the sample or the sample piece with an ion beam;
Transfer means for placing the sample piece on the holder;
Means for changing the tilt angle of the holder with respect to the incident direction of the ion beam. In the sample preparation device according to claim 3,
A sample preparation apparatus, wherein a plurality of the sample pieces can be mounted on the second stage. In the sample preparation device according to any one of claims 2, 4, and 5,
A sample preparation apparatus, wherein a plurality of the sample pieces can be mounted on the holder. In the sample preparation device according to claim 3,
The sample preparation apparatus, wherein the second stage is a sample stage also used as an inspection apparatus. In the sample preparation device according to any one of claims 1, 2, 4, and 5,
A sample preparation apparatus, wherein the holder is a sample stage also used as an inspection apparatus. In the sample preparation device according to claim 8 or 9,
The sample preparation apparatus characterized in that the inspection apparatus includes a scanning electron microscope, a scanning transmission electron microscope, and a transmission electron microscope. In the sample preparation device according to any one of claims 1, 3, and 5,
The sample preparation apparatus, wherein the transfer means includes a probe and a probe driving means for driving the probe. In the sample preparation device according to claim 2 or 4,
The means for extracting the sample piece from the sample and transferring it to the holder comprises a probe and a probe driving means for driving the probe. In the sample preparation device according to any one of claims 1 to 12,
A sample preparation apparatus, wherein the sample is a semiconductor wafer. In the sample preparation device according to any one of claims 1 to 12,
A sample preparation apparatus, wherein the sample is a semiconductor chip. In the sample preparation device according to any one of claims 1 to 12,
A sample preparation apparatus, wherein the sample is a device chip. A sample stage on which the sample is placed;
A sample chamber in which the sample stage is installed;
An irradiation optical system for irradiating the sample with an ion beam;
A detector for detecting secondary particles generated by irradiation of the ion beam;
A sample holder having an installation surface capable of fixing a sample piece separated from the sample by irradiation of the ion beam;
A probe for transferring the separated sample piece to an installation surface of the sample holder;
A probe driving mechanism for moving the probe to a desired location;
Means for rotating an installation surface of the sample holder with respect to an incident direction of the ion beam. In the sample preparation device according to any one of claims 1, 2, 3, 4, 5, and 16,
The sample preparation apparatus, wherein the ion beam is a focused ion beam. A sample stage on which the sample is placed;
An irradiation optical system for irradiating the sample with an ion beam;
A sample holder for placing a sample piece extracted from the sample;
A transfer means for placing the sample piece on the sample holder;
A sample preparation apparatus comprising: means for inclining the sample holder and means for inclining the sample stage with respect to an incident direction of the ion beam. The sample preparation device according to claim 18,
The sample preparation apparatus characterized in that the means for inclining the sample stage is a stage control device for controlling at least movement and inclination of the sample stage. A sample stage on which the sample is placed;
A vacuum sample chamber in which the sample stage is installed;
An irradiation optical system for irradiating the sample with an ion beam;
A TEM or STEM holder that can hold at least one sample piece separated from the sample by irradiation with the ion beam;
A transfer means provided in the vacuum sample chamber for placing the sample piece on the TEM or STEM holder;
A holder holding member for holding at least one TEM or STEM holder;
Means for rotating the holder holding member about an axis perpendicular to the optical axis of the ion beam,
A sample preparation apparatus characterized in that the orientation of the sample piece held by the TEM or STEM holder is changed by rotation of the holder holding member, and the processing of the sample piece is executed in the vacuum sample chamber. A tiltable sample stage on which the sample is placed;
A vacuum sample chamber in which the sample stage is installed;
An irradiation optical system for irradiating the sample with an ion beam;
A sample holder capable of holding a sample piece separated from the sample by irradiation of the ion beam;
Means for extracting the sample piece from the sample in the vacuum sample chamber and transferring it to the sample holder;
Means for rotating the sample holder about an axis parallel to the tilt axis of the sample stage,
A sample preparation apparatus characterized in that the orientation of the sample piece held by the sample holder is changed by the rotation of the sample holder, and the processing of the sample piece is executed in the vacuum sample chamber. A sample stage on which the sample is placed;
A sample chamber in which the sample stage is installed;
An irradiation optical system for irradiating the sample with an ion beam;
A sample holder capable of holding a sample piece separated from the sample by irradiation of the ion beam;
Means installed in the sample chamber, extracting the sample piece from the sample and transferring it to the sample holder;
And a means for rotating the holder to change the irradiation position of the ion beam on the sample piece. A first stage for placing a sample;
A sample chamber in which the first stage is installed;
An irradiation optical system for irradiating the sample with an ion beam;
A second stage for placing a sample piece extracted from the sample;
A transfer means provided in the sample chamber for placing the sample piece on the second stage;
Means for controlling the tilt angle of the second stage with respect to the optical axis of the ion beam. In the sample preparation device according to any one of claims 1, 2, 4, 20, 21, and 22,
A sample preparation apparatus comprising a detector for detecting secondary particles generated by irradiation with the ion beam. A tiltable sample stage on which the sample is placed;
A sample chamber in which the sample stage is installed;
An irradiation optical system for irradiating the sample with an ion beam;
A holder capable of holding a sample piece separated from the sample by irradiation of the ion beam;
Means for extracting the sample piece from the sample and transferring it to the holder;
A sample preparation apparatus comprising: a rotation mechanism that rotates the holder with respect to the sample stage independently of the inclination of the sample stage. A sample stage on which the sample is placed;
A sample chamber in which the sample stage is installed;
An irradiation optical system for irradiating the sample with an ion beam;
A holder capable of holding a sample piece separated from the sample by irradiation of the ion beam;
Means for extracting the sample piece from the sample and transferring it to the holder;
A sample preparation apparatus comprising a rotation mechanism for rotating the holder so that the ion beam is irradiated to a desired processing position of the sample piece. A sample stage on which the sample is placed;
A holder for placing a sample piece extracted from the sample, and changing the tilt angle with respect to the incident direction of the ion beam;
An irradiation optical system for irradiating the sample or the sample piece with an ion beam;
Transfer means for placing the sample piece on the holder;
A sample preparation apparatus comprising: A sample stage on which the sample is placed;
A sample piece extracted from the sample, and a holder rotatable with respect to the incident direction of the ion beam;
An irradiation optical system for irradiating the sample or the sample piece with an ion beam;
A sample preparation apparatus comprising: a transfer means for placing the sample piece on the holder. A tiltable sample stage on which the sample is placed;
A sample chamber capable of being evacuated in which the sample stage is installed;
An irradiation optical system for irradiating the sample with an ion beam;
A holder for holding a sample piece separated from the sample by irradiation of the ion beam and capable of changing a rotation angle with respect to an inclination axis of the sample stage;
Means for extracting the sample piece from the sample and transferring it to the holder in the sample chamber.

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