JP4012158B2 - Electron microscope apparatus and electron microscope observation method - Google Patents

Description

  The present invention relates to an electron microscope apparatus and an electron microscope observation method for performing observation with a scanning electron microscope by improving the efficiency of secondary electron generation on an observation surface for a thinned observation region.

  FIG. 25 shows a conventional electron microscope observation method of an observation sample (see, for example, Non-Patent Document 1).

  For example, in order to observe the cross section and internal structure of the Si semiconductor device sample in which the semiconductor device pattern 104 is formed on the Si substrate 103, the sample is thinned to about 1 μm, for example, with a focused ion beam so as to expose the observation region 102, and the sample for an electron microscope 101 is produced.

Next, for the electron microscope sample 101 including the observation region 102, a high-acceleration (for example, 200 kV) scanning electron microscope image (hereinafter abbreviated as SEM) observation function and a scanning transmission electron microscope image (hereinafter referred to as scanning) A transmission electron microscope is abbreviated as STEM) In a STEM apparatus configured to have an observation function, an electron beam 105 is scanned in an observation region, and a cross-sectional observation by SEM of the sample 101 and an internal structure by STEM are observed.
Abstracts of the 54th Annual Meeting of the Electron Microscopy Society of Japan 144 (1998) JP-A-6-61320

  In the conventional electron microscope observation, when the structure inside the sample is refined and densified and a detailed cross section by SEM and internal structure observation by STEM are performed, it is necessary to further reduce the film thickness in the observation region. However, for example, when thinned to about 0.1 μm, since the film thickness of the observation surface is thin, the electron beam is transmitted and the amount of secondary electrons generated from the observation surface is reduced. In the case of a sample that also includes a material that does not exhibit conductivity, a charging phenomenon occurs in which electrons are charged on the surface of the observation sample by irradiating an electron beam. Secondary electrons could not be detected, and it was difficult to observe the cross section at high resolution.

Further, when the structure of the sample is miniaturized and densified, the two observation surfaces in the thinned observation region may have different cross-sectional structures. In this case, since the STEM image is an image integrated by the thickness of the sample film, in order to obtain details of the sample structure, it is necessary to perform step surface observation with SEM. When performing simple cross-sectional observation, additional processing such as inserting a sample into a focused ion beam processing apparatus (hereinafter abbreviated as FIB) and depositing a metal film such as W by FIB on the opposite side of the observation direction in the observation region (See, for example, Patent Document 1) , but the observation region is thin enough to perform high-resolution STEM image observation. There was a risk of damaging the observation area by additional processing with FIB.

  Accordingly, an object of the present invention is made in view of the above problems, and a high-resolution image having a function of increasing the efficiency of generating secondary electrons on the observation surface of a sample thinned to a film thickness enabling STEM observation. It is to provide an electron microscope apparatus and an electron microscope observation method that can be observed with a scanning electron microscope.

In order to solve the above problems, an electron microscope apparatus according to claim 1 of the present invention comprises a sample holder for mounting a sample for scanning electron microscope observation or scanning transmission electron microscope observation, and 2 when irradiated with an electron beam. A contrast material composed of tungsten having high secondary electron generation efficiency and conductivity, and a contrast material driving unit for driving the contrast material, wherein the sample holder includes a focused ion beam processing apparatus and a scanning transmission electron microscope The mounting material for mounting the sample and the contrast material are arranged on a sample stage provided at the tip of the sample holder, and the tip of the sample holder is placed at the base end of the sample holder. A switching dial for changing the orientation and the contrast material driving unit are arranged, and the contrast material is placed on the sample. The contrast material driving unit is disposed in a predetermined region on the back surface side opposite to the front surface side irradiated with the electron beam, and an opening in which the sample is positioned on a sample stage of the sample holder A space for limiting the operating range of the contrast material is provided, and a pulley for winding and fixing one end of a metal belt or a metal wire is provided on one of the shaft end portions of the contrast material. The other end is fixed to the drive shaft of the sample stage, and a pressing roller for pressing the metal belt or metal wire is provided between the drive shaft and the pulley, and the other end of the contrast material shaft end. A coil spring or a spiral spring is provided.

The electron microscope apparatus according to claim 2 is the electron microscope apparatus according to claim 1 , wherein the sample holder drives the contrast material driving unit to coil the metal belt or the metal wire together with the driving shaft. The contrast is applied in the range between the sample stage opening and the space inside the sample stage so that the contrast material is positioned below the sample observation surface by applying a rotational force in the opposite direction to the attractive force of the spring or spiral spring. A mechanism for driving the material is provided.

The electron microscope apparatus according to claim 3 has a sample holder for mounting a sample for observation with a scanning electron microscope or a scanning transmission electron microscope, a high secondary electron generation efficiency when irradiated with an electron beam, and exhibits conductivity. A contrast material composed of tungsten; and a contrast material driving unit for driving the contrast material, wherein the sample holder can be shared by a focused ion beam processing apparatus and a scanning transmission electron microscope apparatus. The mounting material for mounting the sample and the contrast material are arranged on a sample stage provided at the distal end of the sample holder, a switching dial for changing the orientation of the distal end of the sample holder and the contrast at the base end of the sample holder The contrast material is opposite to the surface side of the sample irradiated with the electron beam. A sample for a transmission electron microscope, which is arranged in a predetermined region on the back surface side of the image sensor by controlling the contrast material driving unit and is bonded to a mesh as the sample, and the sample holder has the mesh side of the sample on the sample side It is configured to be mounted on a stage with the mesh sandwiched between the mounting material and the sample stage, and by inserting the sample holder into an electron microscope so that the sample faces the electron beam, It drives so that the said contrast material may be arrange | positioned in the back surface side opposite to the surface side irradiated with the said electron beam.

The electron microscope apparatus according to claim 4 has a sample holder for mounting a sample for observation with a scanning electron microscope or a scanning transmission electron microscope, a high secondary electron generation efficiency when irradiated with an electron beam, and exhibits conductivity. A contrast material composed of tungsten; and a contrast material driving unit for driving the contrast material, wherein the sample holder can be shared by a focused ion beam processing apparatus and a scanning transmission electron microscope apparatus. The mounting material for mounting the sample and the contrast material are arranged on a sample stage provided at the distal end of the sample holder, a switching dial for changing the orientation of the distal end of the sample holder and the contrast at the base end of the sample holder The contrast material is opposite to the surface side of the sample irradiated with the electron beam. Is arranged by controlling the contrast material driving unit in a predetermined area on the back surface side of the sample holder, and the sample holder is arranged with a mounting material for mounting the sample at an arbitrary position on the sample stage and two contrast materials. The mounting material provided for the sample stage of the sample holder is formed of a metal material having sufficient strength, and is opposed to each other with a space on the flat sample stage. A second metal member comprising a first metal member having a contact surface projecting one step toward the center and a flat metal member having a metal spring having one end fixed to the sample stage and sufficient strength. The mounting material is disposed so as to face each other, and the second mounting material expands and contracts in the sample insertion direction by the metal spring.

The electron microscope apparatus according to claim 5 is the electron microscope apparatus according to claim 4 , wherein the first mounting material and the sample stage have two cavities for driving the two contrast materials without colliding with each other. A metal plate is provided between them.

The electron microscope apparatus according to claim 6 has a sample holder for mounting a sample for observation with a scanning electron microscope or a scanning transmission electron microscope, a high secondary electron generation efficiency when irradiated with an electron beam, and conductivity. A contrast material composed of tungsten; and a contrast material driving unit for driving the contrast material, wherein the sample holder can be shared by a focused ion beam processing apparatus and a scanning transmission electron microscope apparatus. The mounting material for mounting the sample and the contrast material are arranged on a sample stage provided at the distal end of the sample holder, a switching dial for changing the orientation of the distal end of the sample holder and the contrast at the base end of the sample holder The contrast material is opposite to the surface side of the sample irradiated with the electron beam. Is arranged by controlling the contrast material driving unit in a predetermined area on the back surface side of the sample holder, and the sample holder is arranged with a mounting material for mounting the sample at an arbitrary position on the sample stage and two contrast materials. The two contrast members of the sample holder are composed of a metal spring attached to a fixed part inside the sample stage and a speed reducer in order to apply a force in the direction opposite to the driving direction of the contrast material at all times. A metal wire attached to the contrast material driving unit having a gear and a micrometer is provided, respectively, and the micrometer of the contrast material driving unit is rotated to drive the contrast material via the reduction gear and the metal wire.

The electron microscope apparatus according to claim 7 has a sample holder on which a sample for scanning electron microscope observation or scanning transmission electron microscope observation is mounted, and has a high secondary electron generation efficiency when irradiated with an electron beam and exhibits conductivity. A contrast material composed of tungsten; and a contrast material driving unit for driving the contrast material, wherein the sample holder can be shared by a focused ion beam processing apparatus and a scanning transmission electron microscope apparatus. The mounting material for mounting the sample and the contrast material are arranged on a sample stage provided at the distal end of the sample holder, a switching dial for changing the orientation of the distal end of the sample holder and the contrast at the base end of the sample holder The contrast material is opposite to the surface side of the sample irradiated with the electron beam. Is arranged by controlling the contrast material driving unit in a predetermined area on the back surface side of the sample holder, and the sample holder is arranged with a mounting material for mounting the sample at an arbitrary position on the sample stage and two contrast materials. The sample for the electron microscope used for the sample holder is a convex part protruding in a convex shape including the observation region, and the outer peripheral part of the convex part is uniformly at a predetermined height. The second mounting material is in contact with the bottom surface of the sample, and the contact surfaces formed on the two first mounting materials facing each other are in contact with the sample surface of the outer peripheral portion of the convex portion of the sample. While the contact surface serves as a positioning stopper, the sample can always be mounted at any position with the sample surface on the outer periphery of the convex portion of the sample and the bottom surface of the sample interposed therebetween.

The electron microscope apparatus according to claim 8 is an electron microscope apparatus provided with a scanning transmission electron microscope of a pole piece mounting type, a sample holder for mounting a sample for performing the scanning transmission electron microscope observation, and an electron beam. Two contrast materials composed of tungsten having high secondary electron generation efficiency when irradiated, and two contrast material driving portions for driving the contrast material, It is arranged by controlling the contrast material driving unit in a predetermined region on the back surface side opposite to the front surface side irradiated with the electron beam in the sample, and the two contrast materials are not thinned of the electron microscope sample. In order not to be affected by the sample film thickness in the peripheral part, the width of the sample is smaller than the thin piece region, and the peripheral part of the sample that has not been thinned is damaged. Consists in the stomach size of the metal plate, the contrast material is placed at a height from the surface opposite of the viewing surface having a predetermined distance.

The electron microscope apparatus according to claim 9 is an electron microscope apparatus provided with a scanning transmission electron microscope of a pole piece mounting type, a sample holder for mounting a sample for performing the scanning transmission electron microscope observation, and an electron beam Two contrast materials composed of tungsten having high secondary electron generation efficiency when irradiated, and two contrast material driving portions for driving the contrast material, The sample holder tip disposed inside the pole piece of the electron microscope is disposed in a predetermined region on the back surface side opposite to the front surface side irradiated with the electron beam in the sample by controlling the contrast material driving unit. Within the movable space, the two contrast materials are at an arbitrary height opposite to the observation direction of the sample observation surface mounted on the sample holder. It is disposed, and a function of driving only in the direction perpendicular to the incident direction of the electron beam at the desired height.

According to the electron microscope apparatus of the first to ninth aspects of the present invention, the sample microscope includes the sample holder, the contrast material, and the contrast material driving unit, and the contrast material is opposite to the surface side of the sample irradiated with the electron beam. Since the contrast material driving unit is disposed in a predetermined area on the back surface side of the substrate, a reworking process such as depositing a metal film on the side opposite to the observation direction of the sample is omitted. Without damaging the observation direction, with the contrast material installed at a position close to the thinned portion of the sample opposite to the observation direction, an electron beam is irradiated on an arbitrary observation surface to improve the secondary electron generation efficiency, High-resolution SEM observation can be performed.

  In addition, a high-resolution SEM image in which secondary electron generation efficiency is improved using a contrast material in accordance with the analysis purpose of the sample, and STEM observation without using a contrast material can be easily selected and switched for observation. Details about the cross-section and internal structure of the exfoliated sample can be obtained.

Further, since the contrast material is made of a metal having high secondary electron generation efficiency and conductivity, a high-resolution SEM image can be obtained for an arbitrary observation surface of the sample.

In claims 1-7, the sample holder is capable shared scanning transmission electron microscope and a focused ion beam processing apparatus, arranged mounting member and contrast material for mounting a sample on a sample stage provided at the tip of the sample holder In addition, since a switching dial for changing the direction of the tip of the sample holder and a contrast material driving unit are arranged at the base end of the sample holder, the sample holder is a focused ion beam processing device and a scanning transmission electron microscope device. Can be shared with other sample holders. Further, only the distal end portion of the sample holder can be rotated by a switching dial provided at the base end portion of the sample holder, and SEM observation can be performed by driving the contrast material by the contrast material driving portion.

In the first aspect of the present invention , the sample stage of the sample holder is provided with an opening in which the sample is located and a space that limits the operating range of the contrast material, and one end of a metal belt or metal wire is provided on one of the shaft end portions of the contrast material. The other end of the metal belt or wire is fixed to the drive shaft of the sample stage, and a pressing roller for pressing the metal belt or metal wire is provided between the drive shaft and the pulley. A coil spring or a spiral spring is provided at the other end of the contrast material shaft, and one end of the coil spring or spiral spring is wound around and fixed to the contrast material shaft end. The side is fixed to the spring mounting part of the sample stage, so that an attractive force is always applied to the opposite side of the contrast material located under the sample observation surface. Going on. The contrast material can be driven by applying a rotational force in a direction in which the metal belt or the metal wire is connected to the distal end portion and the proximal end portion of the sample holder, that is, in a direction opposite to the attractive force of the coil spring or the spiral spring.

According to a second aspect of the present invention , the sample holder drives the contrast material driving unit so that the metal belt or the metal wire moves back and forth together with the driving shaft, and the contrast material is moved in the range between the sample stage opening and the space inside the sample stage. Since the driving mechanism is provided, the contrast material can be driven by the contrast material driving unit.

According to a third aspect of the present invention, a sample for a transmission electron microscope bonded to a mesh is used as a sample, and the sample holder is mounted so that the mesh side of the sample is placed on the sample stage and the mesh is sandwiched between the mounting material and the sample stage. Since the sample holder is inserted into the electron microscope so that the sample faces the electron beam, the contrast material is driven on the back side opposite to the surface side irradiated with the electron beam in the sample. the sample can be mounted on the sample stage by the mesh, it is possible to perform SEM observation.

In the fourth , sixth , and seventh aspects , since the sample holder is configured by arranging a mounting material for mounting the sample at an arbitrary position and two or more contrast materials on the sample stage, two specimens are used. In the case of samples having different cross-sectional structures, it is possible to perform SEM observation in detail from two directions for a desired observation region.

According to a fourth aspect of the present invention , the mounting material provided for the sample stage of the sample holder is formed of a metal material having sufficient strength, and is opposed to each other with a space on the flat sample stage so as to face the center side of the sample stage opening. Two first mounting members each formed with a contact surface projecting one step toward the surface, and a second mounting member made of a flat metal material having a metal spring with one end fixed to the sample stage and having sufficient strength; Are arranged so as to face each other, and the second mounting material expands and contracts in the sample insertion direction by the metal spring. Therefore, when the second mounting material is pushed and the sample is loaded, the elasticity of the metal spring is used to place the sample into the two first samples. It can be supported while pressed against the mounting material.

In claim 5 , since the first mounting material and the sample stage are provided with two cavities for driving the two contrast materials without colliding with each other and a metal plate therebetween, the metal plate and the cavity are provided with The contrast material can be translated along.

According to a sixth aspect of the present invention , the two contrast members of the sample holder are provided with a metal spring, a reduction gear, and a micro gear attached to a fixed portion inside the sample stage in order to constantly apply a force in the direction opposite to the driving direction of the contrast material. Each having a metal wire attached to a contrast material driving unit having a meter and rotating the micrometer of the contrast material driving unit to drive the contrast material via the reduction gear and the metal wire. The two contrast materials can be translated.

According to the seventh aspect of the present invention , the electron microscope sample used for the sample holder has a convex portion in which the portion including the observation region protrudes in a convex shape, and the outer peripheral portion of the convex portion has a uniform height. The outer peripheral part of the part is positioned in contact with the two first mounting materials. Further, a contrast material can be disposed on one or the other side of the observation surface of the convex portion, and SEM observation can be performed in detail from two directions.

Further , the second mounting material contacts the bottom surface of the sample, the contact surfaces formed on the two first mounting materials facing each other contact the sample surface of the outer peripheral portion of the convex portion of the sample, and these contact surfaces While serving as a positioning stopper, the sample can always be mounted at any position with the sample surface on the outer periphery of the convex portion of the sample sandwiched between the bottom surface of the sample. The sample can always be mounted at an arbitrary position of the sample holder and parallel to the sample holder.

Claims 8 and 9 are electron microscope apparatuses provided with a scanning transmission electron microscope equipped with a pole piece, wherein two or more contrast materials, and two or more contrast material driving units for driving the contrast materials, A configuration equipped with a pole piece mounting type electron microscope equipped with a magnetic type electron lens configured by applying a magnetic field by an objective lens to a metal pole piece to enable a short focal length and high resolution. In the case of the samples having different cross-sectional structures on the two observation surfaces, the SEM observation can be performed in detail from two directions for the desired observation region.

According to claim 8 , the two contrast materials are not affected by the sample film thickness in the peripheral portion of the electron microscope sample that has not been thinned, so that the width of the contrast material is smaller than that of the thin piece region of the sample and is not thinned. Contrast material is installed at a height with a predetermined distance from the surface opposite to the observation surface, so that the contrast material does not touch the unflaked part of the sample. Therefore, the sample can be moved so as to be located on the opposite side of the observation surface without being affected by the sample thickness in the peripheral region where the sample is not thinned.

According to a ninth aspect of the present invention , in the space in which the tip of the sample holder provided in the pole piece of the electron microscope can move, the two contrast materials are at an arbitrary height opposite to the observation direction of the sample observation surface mounted on the sample holder. Since it is arranged and has a function of driving at an arbitrary height only in a direction perpendicular to the incident direction of the electron beam, if the SEM observation is performed with the contrast material close to the observation surface, the observation surface is in the observation direction. The contrast material on the opposite side improves the generation efficiency of secondary electrons and enables high-resolution SEM observation on the observation surface.

  A first embodiment of the present invention will be described with reference to FIGS.

  In Embodiment 1 of the present invention, a sample holder capable of performing detailed cross-sectional SEM observation in any one direction and an electron microscope observation method using the sample holder will be described with reference to the observation region of the sample.

  FIG. 1 is a schematic configuration diagram of a sample holder H1 according to an embodiment of the present invention. This sample holder H1 includes a focused ion beam processing apparatus (hereinafter abbreviated as FIB), a scanning electron microscope (hereinafter abbreviated as SEM) and a scanning transmission electron microscope (hereinafter abbreviated as STEM). As shown in FIG. 1, the sample holder H1 is composed of a front end H101 and an end (base end) H102, and the front end H101 of the sample holder H1 is a sample stage H103 and a sample mounting material H104. The sample stage H103 includes a contrast material H105, a cavity H103a with respect to the operating range of the contrast material H105, an abutting surface H103b at an end thereof, an axis H114 of the contrast material H105, and an H103c for rotating the axis H114. (FIG. 3), the end H102 of the sample holder H1 is provided with a switching dial H1. And a 6 and contrast material driver H107.

  Next, as shown in FIGS. 2 (1-a, b), (2-a, b), (3-a, b), the switching dial H106 of the end portion H102 of the sample holder H1 is FIB, STEM1. When the switching dial H106 is switched to the direction of STEM2, only the tip H101 of the sample holder H1 can be rotated by 90 degrees as shown in the figure. At this time, the contrast material driving unit H107 at the end H102 does not rotate even when the direction of the switching dial H106 is switched. However, as shown in FIG. 7 (1-a, 2-a), the directions of FIB and STEM1 are as follows. It is assumed that the contrast material H105 is driven by rotating it to the right. Further, FIG. 2 shows the orientation of the tip H101 of the sample holder H1 in the FIB and the STEM, the direction of the Ga + ion beam B1 in the FIB, and the electron beam B2 in the STEM in the direction of each switching dial H106. Showing the relationship.

  Next, as shown in FIGS. 3 and 4, the contrast material H105 provided in the sample stage H103 is made of W which is a metal having high secondary electron generation efficiency and conductivity, and the tip does not hit the sample. The protrusion H105a has a flat surface corresponding to the size of the protrusion (for example, approximately 1.5 mm) and the height of the protrusion corresponding to the notch mesh thickness (for example, 50 μm). Further, the shaft H114 of the contrast material H105 is provided with a metal belt H108 and a pulley H109 for winding and fixing the belt on one end of the shaft H114. One end of the metallic belt H108 is wound around and fixed to the pulley H109 of the sample stage H103, and the other side is fixed to the driving shaft H110 of the sample stage H103. A coil spring H113 is provided at the other end of the shaft H114. One end of the coil spring H113 is wound around and fixed to the end portion of the shaft H114, and the other side is fixed to a spring mounting portion H115 attached to the sample stage H103. The contrast material H105 contacts the contact surface H103b. Attraction is always applied to touch.

  Further, a pressing roller H111 is inserted between the contrast material driving shaft H110 and the pulley H109 of the sample stage H103, thereby pressing the middle of the metal belt H108. The contrast material 105 is driven by rotating the contrast material driving portion H107 of the end portion H102 of the sample holder H1, thereby connecting the metal belt H108 to the tip portion H101 and the end portion H102 of the sample holder H1, that is, a coil. This is done by applying a rotational force in the direction opposite to the attractive force of the spring H113. Depending on the length of the metal belt H108, the operating range of the contrast material 105 is limited between the cavity H103a of the sample stage H103 and the sample stage opening H112. Accordingly, the position of the contrast material H105 can be changed via the contrast material driving unit H106 provided in the sample stage H103 with the sample holder H1 inserted into the STEM apparatus.

  Next, a sample according to Embodiment 1 of the present invention is shown in FIG. The sample used in this embodiment is a Si semiconductor device, and a semiconductor device pattern 104 is formed on a Si substrate 103 as in FIG. 25, and dicing is performed into an L-shape as shown in FIG. The L-shaped sample 106 is produced by bonding the convex portion of the L-shaped sample 106 to a semicircular cutout mesh 107 of 3 mmΦ. Note that the L-shaped sample 106 is bonded to the cutout mesh 107 so that the convex portion, which is a portion to be observed, and the cutout mesh 107 do not necessarily overlap with each other, thereby producing a sample for an electron microscope.

  Next, as shown in FIG. 6, the L-shaped sample 106 is oriented so that the notch mesh 107 is arranged on the sample stage H103 side and the sample observation surface 108 is arranged on the sample mounting material H104 side of the sample holder H1. The sample stage H103 of the sample holder H1 and the sample mounting material H104 are mounted by sandwiching a part of the cutout mesh 107 of the L-shaped sample 106. As shown in FIG. 5B, the observation surface 108 of the L-shaped sample 106 is thinned into an arbitrary film thickness (for example, 0.1 μm) that can be observed with a transmission electron microscope by FIB processing.

  Next, an example of the electron microscope observation method according to the first embodiment of the present invention will be described in detail with reference to FIGS. Here, as shown in FIG. 7 (1-a, b, c), the L-shaped sample 106 irradiates the observation surface 108 of the sample with an electron beam B2, and ends the sample holder H1. The switching dial H106 of H102 is inserted into the STEM in accordance with the direction of the STEM1. In this state, since the contrast material H105 is in contact with the contact surface H103b by the attractive force of the coil spring H113, both SEM observation and STEM observation can be performed.

  Next, by rotating the contrast material driving unit H107 provided at the end H102 of the sample holder H1 to the STEM1, the viewing direction of the observation surface 108 is as shown in FIG. 7 (2-a, b, c). The contrast material H105 is driven through the cavity H103a of the sample stage so as to be installed on the side opposite to the direction of the electron beam B2. When the contrast material H105 is driven and the surface of the contrast material projection H105a reaches the upper surface of the notch mesh 107 while contacting the surface 106a of the sample peripheral portion, the drive of the contrast material H105 is stopped. If SEM observation is performed in the state shown in FIG. 7 (2-a, b, c), the observation surface 108 of the thinned sample is secondarily arranged by the contrast material projection H105a on the side opposite to the observation direction. Electron generation efficiency is improved, and an SEM image of the observation surface 108 can be obtained with high resolution.

  As shown in FIG. 8, if the projection H105a of the contrast material is in contact with the convex side wall 109 around the observation surface 108 of the sample, the charging effect by electron beam irradiation on the observation surface 108 can also be reduced. Therefore, high-resolution SEM observation can be performed together with the effect of improving the efficiency of generating secondary electrons.

According to the first embodiment, a contrast material composed of a metal typified by W as a contrast material for improving the secondary electron generation rate for scanning electron microscope observation of a scanning transmission electron microscope holder that can be shared with FIB Therefore, the efficiency of secondary electron generation can be increased by using an existing STEM device without replacing the sample with the STEM device and without additional processing such as depositing a metal film on the opposite side of the observation surface. High-resolution SEM observation.
Further, the reason that the contrast material H105 is provided with the protrusion H105a is to improve the secondary electron generation efficiency by reducing the distance between the observation surface 108 and the contrast material H105, and to improve the secondary electron generation efficiency. In order to reduce the distance between the contrast material projection H105a and the sample observation surface 108 in order to maintain the effect, the contrast material H105 can be installed by reducing the distance by the notch mesh 107 and the adhesive. It is. Since the projection H105a of the contrast material only hits the peripheral portion of the observation surface 108 of the L-shaped sample 106, the contrast material H105 does not collide with the observation surface 108 to be damaged.

  It should be noted that the contrast material H105, which is completely flat without the protrusion, and has the same size as the opening H112 of the sample stage H103, is used on the mesh side of the sample mounted on the sample stage H103. If driven, an ion milling sample that is made thin by Ar ion sputtering and bonded to a 3 mmΦ single-hole mesh, or an adhesive material made of C is applied to one side of the thinned part by FIB processing. For the lift-out (also referred to as pickup) sample produced by adhering to the attached porous mesh, high-resolution SEM observation is performed on the observation region by driving the contrast material and increasing the secondary electron generation efficiency in the same manner as described above. I can do it.

  A second embodiment of the present invention will be described with reference to FIGS.

  In Embodiment 2 of the present invention, in the same way as in FIG. 2, when the sample holder switching dial is set to STEM1 and STEM2, respectively, and the two observation planes have different cross-sectional structures for the observation area of the sample, the two directions are described in detail. A sample holder capable of performing SEM observation and an electron microscope observation method using the same will be described.

  In the case of Embodiment 2 of the present invention, the distance between the sample observation surface and the contrast material installed on the opposite side can be obtained in order to obtain the effect of improving the secondary electron generation efficiency by the contrast material on the observation surface in two directions. It is necessary to make it small, and the driving of the contrast material requires further positional accuracy.

  FIG. 9 is a schematic configuration diagram of a sample holder according to the embodiment of the present invention. The sample holder H2 is a shared holder for the FIB apparatus and the STEM apparatus. The sample holder H2 includes a front end H201 and an end H202. The front end H201 of the sample holder H2 is attached to the sample stage H203 and a mounting material. H210 and contrast materials H221A and H221B, and an end H202 of the sample holder H2 includes a contrast material driving unit H230 and a switching dial H204.

  Next, the switching dial H204 of the end portion H202 of the sample holder H2 is shown in FIG. 10 (1-a, b), (2-a, b), (3-a, b), FIB, STEM1, When the dial is switched to the direction of the STEM2, the tip end portion H201 of the sample holder can be rotated by 90 degrees, and the orientation of the tip end portion H201 of the sample holder in the FIB and the STEM in each direction of the switching dial H204. The relationship between the direction of the ion beam B1 in the FIB and the direction of the electron beam B2 in the STEM is shown.

  Next, as shown in FIGS. 11 (1), (2), and (3-a, b), the mounting material H210 provided in the sample stage H203 is composed of mounting materials H211, H212, and H213 made of metal plates, respectively. Further, the mounting material H211 and the sample stage H203 do not collide with each other with the cavities H211a and H211b, which allow the contrast materials H221a and H221b to move in parallel, and the contrast materials H221a and H221b. And a metal plate H206 having a thickness about the sample convex portion so that the contrast materials H221a and H221b do not collide with each other, and the mounting material H213 is provided with a metal spring H214 provided to move in parallel within the sample stage H203. Composed.

  Next, as shown in FIGS. 12 and 13, the contrast materials H221a and H221b provided in the sample stage H203 are composed of a metal plate made of W, which is a metal having high secondary electron generation efficiency and conductivity. . Further, metal wires H222a and H222b are attached to the contrast materials H221a and H221b, respectively, and one of the metal wires H222 is provided with metal springs H223a and H223b so that a force in the direction opposite to the driving direction of the contrast material is always applied. In order to add, one is attached to a metal plate H207 which is built in and fixed inside the holder, and the other is attached to a reduction gear H224 of a contrast material driving unit H230 provided at the sample holder end H202. The contrast material driving unit H230 includes a micrometer H231a and H231b provided with reduction gears H224a and H224b provided on the sample holder end H202, and has a function of driving the contrast material H221. The metal spring H223 provided on the metal wire H222 serves to limit the moving speed of the contrast materials H221a and H221b and the operating range thereof (for example, within the operating range of 2 mm) when driving the contrast materials H221a and H221b. Fulfill. The contrast materials H221a and H221b are driven by rotating the micrometers H231a and H231b provided in the contrast material driving unit H230 of the sample holder H2, respectively, so that the metal wire H222 is connected to the front end portion H201 and the end portion of the sample holder H2. By moving back and forth in the direction connecting H202, the contrast materials H221a and H221Bb are translated along the metal plate H206 provided in the sample mounting material H211 and the cavities H211a and H211b.

  As shown in FIG. 14, when the micrometer H231a of the contrast material driving unit H230 provided in the sample holder end H202 is rotated, the contrast material H221a is brought into contact with the micrometer H231b of the contrast material driving unit H230 via the reduction gear H224a. When rotated, the contrast material H221b is driven through the reduction gear H224b. Since both the contrast materials H221a and H221b are driven within the above-described operation range, the contrast materials H221a and H221b are connected via the contrast material driving portion H230 provided in the sample holder end portion H202 with the sample holder H2 inserted into the STEM apparatus. Can be driven.

  As described above, the sample holder H2 can be observed by cross-sectional SEM in both the STEM1 and STEM2 observation directions. Hereinafter, the shape of the sample and the method of mounting the sample on the sample holder H2 will be described.

  FIG. 15 is a diagram illustrating an example of a sample according to Embodiment 2 of the present invention. The convex sample 110 is a Si semiconductor device sample as illustrated in FIG. 25, and the sample surface is partially convex. It is manufactured by dicing into a shape having 111a and 111b and arbitrary dimensions.

  Next, a method of mounting the convex sample 110 on the sample holder H2 will be described with reference to FIGS. 16 (1-a, b), (2-a, b), and (3-a, b). As shown in FIG. 16 (1-a, b), the mounting material (second mounting material) H 213 of the sample stage H 203 is pushed with the tweezers P, and as shown in FIG. 16 (2-a, b) on the sample stage H 203. A sample 110 is placed on the surface. Next, as shown in FIG. 16 (3-a, b), the bottom surface 111c of the sample 110 is pushed by the mounting material H213 using the elasticity of the metal spring H214 provided in the mounting material H213, and the sample surfaces 111a, 111b are pressed. And the sample bottom surface 111c are supported by the mounting materials H212, H211 and H213, respectively, and mounted on the sample holder H2.

  As shown in FIG. 16, the mounting material H213 of the sample holder H2 always moves the convex sample 110 along the sample stage H203, and the sample surfaces 111a and 111b are always mounted materials (first mounting materials). Since it moves so as to be in contact with H212 and H211, the convex sample 110 is always produced with an arbitrary dimension, and the convex sample 110 is always mounted at an arbitrary position of the sample holder H2 and parallel to the sample holder H2. It is something that can be done.

  As shown in FIG. 15 (2-a, b), the cross-sectional observation region of the convex sample 110 mounted on the sample holder H2 as described above is formed to have a thickness of about 0.1 μm as in the first embodiment. Thinner than ever. Here, it is assumed that the convex sample 110 is mounted on the sample holder H2 in such a direction that the sample stage H203 and the observation surface 122 face each other, as an observation surface 121.

  As shown in FIG. 17, with the observation surface 121 facing the electron beam B2 irradiation direction and mounted on the sample holder H2, the switching dial H204 is inserted into the STEM with the direction of the STEM1 being aligned. As shown in FIG. 10 (2-a, b), in a state where the sample holder H2 is inserted into the STEM apparatus, the micrometer H231b provided in the contrast material driving unit H230 at the end of the sample holder is rotated, and a convex sample is obtained. The contrast material H221b provided on the side opposite to the observation surface 121 of 110 is translated along the cavity H221b of the mounting material H211 toward the sample stage opening H205. When the contrast material H221b reaches a position as shown in FIG. 17 (2-a, b) with the contrast material H221b in contact with the peripheral portion on the sample surface 122 side, the drive of the contrast material H221B is stopped. Since the contrast material H221b is close to the sample surface 122 on the opposite side of the observation surface 121 of the convex sample 110 and is in contact with the sample periphery, if SEM observation is performed in this state, the contrast material 221b The secondary electron generation efficiency on the observation surface 121 can be improved and the charging phenomenon can be reduced, so that a high-resolution SEM image can be obtained on the observation surface 121.

  Next, a case where detailed cross-sectional SEM observation of the observation surface 122 is performed with the sample 110 mounted on the sample holder H2 as described above will be described. As shown in FIG. 10 (3-a, b), the switching dial H204 is inserted into the STEM so that the direction of the switching dial H204 is aligned with the STEM2 so that the electron beam B2 is irradiated facing the observation surface 122.

  In the state of FIG. 10 (3-a, b) in which the sample holder H2 is inserted into the STEM apparatus, the micrometer H231a provided in the contrast material driving unit H230 of the sample holder end H202 is rotated to observe the convex sample 110. The contrast material H221a provided on the side opposite to the surface 122 is translated along the cavity H211a of the mounting material H211 toward the sample stage opening H205. When the contrast material H221a reaches the position shown in FIG. 18 with the contrast material H221a in contact with the peripheral portion on the sample surface 121 side, the drive of the contrast material H221a is stopped. Since the contrast material H221a is placed at a distance close to the sample surface 121 on the opposite side of the observation surface 122 of the convex sample 110 and in contact with the sample periphery, if SEM observation is performed in this state, the contrast material 221b Thus, the secondary electron generation efficiency on the observation surface 122 can be improved and the charging phenomenon can be reduced, and a high-resolution SEM image can be obtained on the observation surface 122. When the contrast material driving unit 230 is not driven, STEM observation can also be performed as internal structure observation.

  As described above, according to the second embodiment, the sample holder of the present invention enables detailed SEM observation in two directions by rotating the tip of the sample holder that can be shared by FIB and STEM by 180 °. As described above, a contrast material composed of a metal having a high secondary electron generation efficiency represented by W as a contrast material for improving the secondary electron generation rate is provided with a function that can be installed near both cross sections of the sample. Therefore, additional processing steps such as depositing a metal film on the side opposite to the observation surface are omitted, and further, the step of adhering the sample to the mesh is omitted, and the observation is made into a thin piece using an existing STEM device. Perform high-resolution SEM observation of any observation surface by improving the efficiency of secondary electron generation by installing a contrast material on the opposite side of the observation direction of any observation surface. Can. When both cross-sectional structures of the observation surface are different from each other in a sample having a fine structure, such as a semiconductor device, the entire cross-section of the sample is transmitted in the STEM image, so detailed cross-sectional observation of both the observation surfaces of the sample is possible. It is an effective electron microscope observation method when necessary. Since the contrast material contacts only the sample side wall which is the peripheral part of the sample observation region, the observation region is not damaged.

  The sample is used without being attached to the mesh for the purpose of maintaining the positional accuracy with the contrast material, and the sample itself is directly handled with tweezers. Therefore, although a convex sample is used to facilitate handling of the sample with tweezers, the sample shape may be an L-shaped sample as in the first embodiment. In this case, however, the positions of the cavities H211a and H211b provided in the mounting material H211 and the metal plate H206 in the sample holder H2 need to be configured in accordance with the dimensions of the convex portions of the L-shaped sample.

  In addition, the sample obtained by cutting the sliced portion including the observation region by FIB is centered on a semicircular 3 mmφ cutout mesh thickness (for example, thickness 50 μm) and on the cutout portion of the cutout mesh. On the other hand, the same effect as described above can be obtained for the μ sampling sample produced by bonding with a metal vapor deposition film or the like in parallel. In that case, the notch mesh is configured so that the notch mesh can be always mounted at any position on the sample stage mounting materials H211, H212, H213 of the sample holder H2, and the notch portion and the semicircular portion of the notch mesh of the sample are arranged. The three points are supported by the sample mounting material H210 and mounted on the sample holder H2. In this state, the contrast materials H221a and H221b provided in the sample stage are moved in parallel from the sample stage toward the sample stage opening along the notch portion of the notch mesh of the sample, respectively, and the contrast material becomes the observation surface. If SEM observation is performed in a state of being installed on the opposite side, secondary electron generation efficiency is improved as an effect similar to the above, and high-resolution SEM observation can be performed on the observation region.

  Furthermore, in Embodiments 1 and 2 of the present invention, if the contrast material driving unit is provided with a control unit based on an electrical signal, when the contrast material comes into contact with the peripheral portion of the sample, the contrast material is energized to detect the electrical signal and Since the function of stopping the driving of the contrast material can be provided when a signal is detected, the positional accuracy between the contrast material and the sample can be further improved, so that the efficiency of secondary electron generation by the contrast material is improved and the observation is performed. By irradiating the region with an electron beam and grounding partially charged electrons to the contrast material, the charging phenomenon on the sample surface can be reduced, so that a higher-resolution SEM image can be obtained.

  A third embodiment of the present invention will be described with reference to FIGS.

  In Embodiment 3 of the present invention, when the two observation surfaces have different cross-sectional structures for the observation region of the sample, the sample holder switching dial is aligned with STEM1 and STEM2 as in FIG. An electron microscope apparatus capable of performing detailed SEM observation on both observation surfaces using an existing sample holder that can be rotated 180 ° and an electron microscope observation method using the same will be described.

  In the case of Embodiment 3 of the present invention, the distance between the sample observation surface and the contrast material installed on the opposite side can be obtained in order to obtain the effect of improving the secondary electron generation efficiency by the contrast material on the observation surface in two directions. In the first and second embodiments of the present invention, it is necessary to further reduce the distance between the contrast surface and the observation surface that is separated by the film thickness of the peripheral portion where the sample is not thinned, and the contrast material. It is necessary to provide a positional accuracy for bringing the lens closer to the opposite side of the observation surface.

FIG. 19 is a schematic configuration diagram of an electron microscope apparatus according to an embodiment of the present invention. This electron microscope apparatus 300 has a pole piece mounting type electron equipped with a magnetic type electron lens that is configured by applying a magnetic field by an objective lens 308 to a metal pole piece 305 so that the focal length is short and high resolution is possible. Two contrast members 306 and a contrast member driving unit 307 which are microscopes and face each other in the direction perpendicular to the direction in which the sample holder H3 is inserted (here, in FIG. 19, they are displayed in a direction parallel to the sample holder H3). In fact, it is provided in the vertical direction), the goniometer 304 that can smoothly move the sample holder H3 in the x and y directions and tilt in one direction, and the observation surface of the sample in the pole piece 305. The electron microscope includes a secondary electron detector 303 that detects the generated secondary electrons. Here, the display is omitted, but in the x and y directions, the insertion direction of the sample holder H3 is the x direction, and the direction parallel to the direction in which the contrast material 306 faces is the y direction. Also good. Also, the direction facing the incident direction of the electron beam B2 of the electron microscope 300 is defined as the z direction. The sample holder H3 is a common holder for the existing FIB apparatus and the STEM apparatus, and is a sample holder that has the same configuration as that shown in FIGS. 1 and 2 and does not include a contrast material and a contrast material driving unit.
Next, FIGS. 20 (1-a, b) and (2-a, b) are produced by attaching the L-shaped sample 106 to the sample holder H3 and cutting the mesh 107 in the same manner as in the first embodiment, for example. 6 shows the positional relationship between the orientation of the switching dial H106 of the sample holder H3, the sample in the pole piece, and the contrast material 306 when not driven, when the sample holder is mounted on the sample holder H3. It is shown. When the direction of the switching dial H106 is the direction of STEM1, the opening H112 of the sample holder H3 faces the contrast material 306a, and when the direction of the switching dial H106 is the direction of STEM2, the opening H112 of the sample holder H3 is contrast. Opposite the material 306b.

  Next, each of the contrast materials 306a and 306b is made of a metal plate made of W, which is a metal having high secondary electron generation efficiency and conductivity, and can cover an observation region at a somewhat high magnification. The width is an arbitrary size (for example, 10 μm) that can be accommodated in a locally thinned region by FIB processing, and each contrast material driving unit 307 drives only in the direction perpendicular to the insertion direction of the sample holder H3. I can do it. In a state where the contrast material 306 is not driven, the tip of the contrast material 306 does not hit when the tip of the sample holder H3 is inserted into the pole piece. Is at the observation visual field center position 311, and the drive range of the contrast material 306 is limited by the above range. Further, the driving of the two contrast material driving units 307 is configured to have a function of restricting so that when one is driven, the other cannot be driven.

  Next, as shown in FIGS. 23 (1) and 23 (2), the pole piece 305 includes the insertion of the tip of the sample holder H3, the inclination of the sample holder H3 by the goniometer 304, and the insertion of the contrast materials 306a and 306b. It is configured with possible space. The height Z0 in the z direction in FIG. 23 (2) is a height at which the SEM image can be observed most clearly with respect to the sample observation surface when the focus value of the electron microscope is 0, and the height Z1 is below the height Z0. In addition, the contrast material 306a, 306b is driven at a position where the top surface is always at the height Z1. The contrast material 306a, 306b is always driven at the position where the height Z1 is not reached. To do.

Next, an example of an electron microscope observation method according to Embodiment 3 of the present invention will be described in detail with reference to FIGS.
The sample used in the present invention is a Si semiconductor device, and a semiconductor device pattern 104 is formed on a Si substrate 103 as in FIG. 25, and is diced into an L-shape as shown in FIG. The L-shaped sample 106 is produced by bonding the convex portion of the L-shaped sample 106 to a semicircular cutout mesh 107 of 3 mmΦ. Note that the L-shaped sample 106 is bonded to the cutout mesh 107 so that the convex portion, which is a portion to be observed, and the cutout mesh 107 do not necessarily overlap with each other, thereby producing a sample for an electron microscope.

  Next, as shown in FIG. 6, the L-shaped sample 106 is oriented so that the notch mesh 107 is arranged on the sample stage H103 side and the sample observation surface 108 is arranged on the sample mounting material H104 side of the sample holder H3. The sample stage H103 of the sample holder H3 and the sample mounting material H104 are mounted by sandwiching a part of the cutout mesh 107 of the L-shaped sample 106. As shown in FIG. 5B, the observation surface 108 of the L-shaped sample 106 is thinned into an arbitrary film thickness (for example, 0.1 μm) that can be observed with a transmission electron microscope by FIB processing. The observation surface 108 and the observation surface 123 are thinned with a width sufficiently larger than the width of the contrast material 306.

  Next, the L-shaped sample 106 irradiates the observation surface 108 of the sample with the electron beam B2, and, as shown in FIG. 20 (1-a), the switching dial of the end H102 of the sample holder H3. H106 is inserted into the STEM in accordance with the direction of the STEM1.

  Next, the observation surface 108 is moved to the observation visual field center 311 in a state where the contrast material 306 in FIG. 20 (1-b) is not driven, and as shown in FIG. Is adjusted to the position of the height Z0.

  Next, as shown in FIG. 21 (2), the goniometer 304 is moved in the direction of the contrast material 306b only in the x and y directions of the observation surface 108 in the state of the height Z0. In this state, the contrast material driving unit 307a drives the contrast material 306a to move the tip of the contrast material 306a to the position of the observation visual field center 311. At this time, the upper surface of the contrast material 306a has a height of Z1.

  Next, in a state where the contrast material 306a is driven, the observation surface 108 is moved only in the x and y directions by the goniometer 304, so that the contrast material 306a does not come into contact with the non-flaked portion of the sample. 23 (2), the contrast material 306a moves so as to be positioned on the opposite side of the observation surface 108.

  As shown in FIGS. 23 (2) and 24, when the SEM observation is performed in a state where the contrast material 306a is close to the observation surface 108, the observation surface 108 of the thinned sample has a contrast on the opposite side to the observation direction. The placement of the material 306a improves the secondary electron generation efficiency, and the observation surface 108 can be observed with high resolution SEM.

  Next, the L-shaped sample 106 irradiates the observation surface 123 of the sample with the electron beam B2, and, as shown in FIG. 20 (2-a), the switching dial of the end H102 of the sample holder H3. H106 is inserted into the STEM in accordance with the direction of the STEM2.

  Next, the observation surface 123 is moved to the observation visual field center 311 in a state where the contrast material 306 of FIG. 20 (2-b) is not driven, and as shown in FIG. Is adjusted to the position of the height Z0.

  Next, as shown in FIG. 22 (2), only the x and y directions of the observation surface 123 in the state of height Z0 are moved by the goniometer 304 in the direction provided with the contrast material 306a. In this state, the contrast material driving unit 307 b drives the contrast material 306 b to move the tip of the contrast material 306 b to the position of the observation visual field center 311. At this time, the upper surface of the contrast material 306b has a height of Z1.

  Next, with the contrast material 306b being driven, the goniometer 304 moves the observation surface 123 only in the x and y directions so that the contrast material 306b does not come into contact with the non-flaked portion of the sample. 23 (2), the contrast material 306b moves on the opposite side of the observation surface 123.

  As shown in FIGS. 23 (2) and 24, if the SEM observation is performed in a state where the contrast material 306b is close to the observation surface 123, the observation surface 123 of the thinned sample has a contrast on the side opposite to the observation direction. By providing the material 306b, the secondary electron generation efficiency is improved, and the observation surface 123 can be observed with high resolution SEM.

As described above, according to the embodiment of the present invention, when an electron microscope having a contrast material and a function for driving the contrast material is used, the existing film can be formed without additional processing such as depositing a metal film on the side opposite to the observation surface. Using a sample holder for an electron microscope that can be used for both FIB and STEM, the tip of the sample holder is rotated 180 °, and the portion of the sample that is thinned on the opposite side of the observation direction for any observation surface Since it has a function to install a contrast material at a very close distance to the opposite side of the observation surface without being affected by the distance from the surface to the non-flaked periphery, the efficiency of secondary electron generation on any observation surface And high-resolution SEM observation of the observation surface can be performed. When both cross-sectional structures of the observation surface are different from each other in a sample having a fine structure, such as a semiconductor device, the entire cross-section of the sample is transmitted in the STEM image, so detailed cross-sectional observation on both observation surfaces of the sample is possible. It is an effective electron microscope observation method when necessary.
In the third embodiment of the present invention, an L-shaped sample is used. However, a convex sample may be used as long as the thinned portion including the observation surface does not hit the contrast material 306.

  In the first, second, and third embodiments of the present invention, the Si semiconductor device is used as a sample, but the sample may be other than the Si semiconductor device.

  The electron microscope apparatus and the scanning electron microscope observation method according to the present invention improve the efficiency of secondary electron generation on an arbitrary observation surface without damaging the sample by subjecting the observation region of the sliced sample to additional processing. In addition, since scanning electron microscope observation can be performed with high resolution, it is useful for detailed structural analysis.

(1) is the front schematic diagram of the sample holder in Embodiment 1 of this invention, (2) is a cross-sectional schematic diagram, (3) is a sample holder edge schematic diagram. It is the sample holder cross-sectional schematic diagram and end schematic diagram showing the correlation between the sample holder and the direction of the switching dial in Embodiment 1 of the present invention. (1) is a front view of a sample stage showing driving of a contrast material provided in a sample holder in Embodiment 1 of the present invention, (2) is a cross-sectional view, and (3) is a schematic diagram of an end of a sample holder. (1) is a front view of a sample stage showing driving of a contrast material provided in a sample holder in Embodiment 1 of the present invention, (2) is a cross-sectional view, and (3) is a schematic diagram of an end of a sample holder. (1) is the schematic diagram before thinning of the sample in Embodiment 1 of this invention, (2) is the schematic diagram after thinning of a sample. (1) is a simplified front view when a sample is mounted on a sample holder in Embodiment 1 of the present invention, and (2) is a simplified sectional view. 1 is a schematic diagram of a sample holder end showing a correlation between a contrast material driving unit, a sample, and a contrast material before and after driving a contrast material when the sample is mounted in Embodiment 1 of the present invention, a simplified front view of a sample stage, and a simplified cross section. FIG. It is a correlation outline figure of the sample and contrast material in Embodiments 1 and 2 of the present invention. (1) is a schematic front view of a sample holder in Embodiment 2 of the present invention, (2) is a schematic cross-sectional view, and (3) is a schematic diagram of an end of a sample holder. It is the sample holder cross-sectional schematic diagram and end schematic diagram which show the correlation with the sample holder in Embodiment 2 of this invention, and the direction of a switching dial. (1) is a schematic diagram of a switching dial in Embodiment 2 of the present invention, (2) is a simplified front view of a sample mounting material, (3-a) is a simplified sectional view, and (3-b) is an opening of a sample stage. FIG. (1) is a schematic diagram of a switching dial according to Embodiment 2 of the present invention, and (2) is a schematic cross-sectional view of a sample stage for explaining driving of a contrast material provided in a sample holder. (1) is a schematic diagram of a switching dial in Embodiment 2 of the present invention, and (2) is a schematic diagram of a sample stage front for explaining the driving of a contrast material provided in the sample holder. FIG. 5 is a simplified cross-sectional view of a sample stage showing a correlation between a sample stage before and after driving a contrast material and the direction of a switching dial in Embodiment 2 of the present invention, and a sample holder end schematic diagram. (1) is a schematic diagram before thinning of a sample in Embodiment 2 of the present invention, (2-a) is a schematic diagram after thinning of the sample, and (2-b) is a schematic front view thereof. It is the front simplified view which shows the sample mounting method in Embodiment 2 of this invention, and the cross-sectional simplified view seen from the sample stage opening part. Overview diagram. Embodiment 2 of the present invention is a sample holder end schematic diagram showing the correlation between the contrast material driving unit, the sample and the contrast material before and after driving the contrast material when the sample is mounted, a simplified front view of the sample stage, and a simplified cross section. FIG. Embodiment 2 of the present invention is a sample holder end schematic diagram showing the correlation between the contrast material driving unit, the sample and the contrast material before and after driving the contrast material when the sample is mounted, a simplified front view of the sample stage, and a simplified cross section. FIG. It is a simplification figure of the electron microscope apparatus in Embodiment 3 of this invention. It is the schematic diagram of the switching dial in Embodiment 3 of this invention, and the correlation outline | summary front view of the sample and contrast material in a pole piece. It is a schematic diagram of a switching dial in Embodiment 3 of the present invention, a front view of the correlation outline between a sample and a contrast material in a pole piece, explaining an electron microscope observation method using a contrast material. It is a schematic diagram of a switching dial in Embodiment 3 of the present invention, a front view of the correlation outline between a sample and a contrast material in a pole piece, explaining an electron microscope observation method using a contrast material. (1) is a schematic cross-sectional view showing the z-direction positions of the sample and contrast material in the pole piece in Embodiment 3 of the present invention, and (2) is an enlarged cross-sectional schematic view of the sample and contrast material. It is a correlation outline figure of the sample and contrast material in Embodiment 3 of the present invention. It is a schematic diagram of the sample for electron microscopes of a prior art example.

Explanation of symbols

DESCRIPTION OF SYMBOLS 101 Electron microscope sample 102 Observation area 103 Si substrate 104 Semiconductor device pattern 105 Electron beam 106 L-shaped sample 107 Notch mesh 108 Observation surface 109 Sample convex part side wall 110 Convex sample 111 Sample surface 121 Observation surface 122 Observation surface 123 Observation Surface 300 electron microscope apparatus 301 electron gun 302 condenser lens 303 secondary electron detector 304 goniometer 305 pole piece 306 contrast material 307 contrast material driving unit 308 objective lens 309 projection lens 310 transmission electron detector 311 observation field center B2 electron beam H1 sample Holder H101 Tip H102 End H103 Sample stage H104 Sample mounting material H105 Contrast material H106 Switching dial H107 Contrast material drive H108 Metal belt H109 Pulley H110 Driving shaft H111 Pressing roller H112 Opening portion H113 Coil spring H114 Shaft H115 Spring mounting portion H2 Sample holder H201 Tip portion H202 End portion H203 Sample stage H204 Switching dial H205 Opening portion H206 Metal plate H207 Metal plate H210 Sample mounting material H211 Mounting material H211a Cavity H212 Mounting material H213 Mounting material H214 Metal spring H221 Contrast material H222 Metal wire H223 Metal spring H224 Reduction gear H230 Contrast material drive H231 Micrometer H3 Sample holder Z0 Height Z1 Height

Claims (9)

A sample holder for mounting a sample for scanning electron microscope observation or scanning transmission electron microscope observation;
A contrast material composed of tungsten having high secondary electron generation efficiency and conductivity when irradiated with an electron beam;
A contrast material driving unit for driving the contrast material,
The sample holder can be shared by a focused ion beam processing apparatus and a scanning transmission electron microscope apparatus, and a mounting material for mounting the sample and a contrast material are disposed on a sample stage provided at a tip portion of the sample holder, A switching dial for changing the orientation of the tip of the sample holder and the contrast material driving unit are arranged at the base end of the sample holder, and the contrast material is a surface irradiated with an electron beam in the sample Arranged in a predetermined region on the back side opposite to the side by controlling the contrast material driving unit,
The sample stage of the sample holder is provided with an opening where the sample is located and a space that limits the operating range of the contrast material, and one end of a metal belt or metal wire is attached to one of the shaft end portions of the contrast material. A pulley for winding and fixing is provided, and the other end of the metal belt or metal wire is fixed to a drive shaft of the sample stage, and the metal belt or metal wire is interposed between the drive shaft and the pulley. An electron microscope apparatus characterized in that a pressing roller for pressing is provided, and a coil spring or a spiral spring is provided on the other end of the shaft end of the contrast material.   The sample holder applies a rotational force in a direction opposite to the attractive force of a coil spring or a spiral spring to the metal belt or the metal wire together with the driving shaft by driving the contrast material driving unit, and the sample stage opening The electron microscope apparatus according to claim 1, further comprising a mechanism for driving the contrast material in a range between the space inside the sample stage and the space inside the sample stage. A sample holder for mounting a sample for scanning electron microscope observation or scanning transmission electron microscope observation;
A contrast material composed of tungsten having high secondary electron generation efficiency and conductivity when irradiated with an electron beam;
A contrast material driving unit for driving the contrast material,
The sample holder can be shared by a focused ion beam processing apparatus and a scanning transmission electron microscope apparatus, and a mounting material for mounting the sample and a contrast material are disposed on a sample stage provided at a tip portion of the sample holder, At the base end of the sample holder, a switching dial for changing the direction of the tip of the sample holder and the contrast material driving unit are arranged,
The contrast material is arranged by controlling the contrast material driving unit in a predetermined region on the back surface side opposite to the front surface side irradiated with the electron beam in the sample,
A sample for a transmission electron microscope bonded to a mesh is used as the sample, and the sample holder is mounted by placing the mesh side of the sample on the sample stage and sandwiching the mesh between the mounting material and the sample stage. The contrast material is arranged on the back surface side of the sample opposite to the front surface side irradiated with the electron beam by inserting the sample holder into the electron microscope so that the sample faces the electron beam. The electron microscope apparatus is driven as described above. A sample holder for mounting a sample for scanning electron microscope observation or scanning transmission electron microscope observation;
A contrast material composed of tungsten having high secondary electron generation efficiency and conductivity when irradiated with an electron beam;
A contrast material driving unit for driving the contrast material,
The sample holder can be shared by a focused ion beam processing apparatus and a scanning transmission electron microscope apparatus, and a mounting material for mounting the sample and a contrast material are disposed on a sample stage provided at a tip portion of the sample holder, At the base end of the sample holder, a switching dial for changing the direction of the tip of the sample holder and the contrast material driving unit are arranged,
The contrast material is arranged by controlling the contrast material driving unit in a predetermined region on the back surface side opposite to the front surface side irradiated with the electron beam in the sample,
The sample holder is configured by arranging a mounting material and two contrast materials for mounting a sample on an arbitrary position on the sample stage,
The mounting material provided for the sample stage of the sample holder is formed of a metal material, and a contact surface is formed on the flat sample stage so as to be opposed to each other at an interval and projecting one step toward the center side of the sample stage opening. Two first mounting members and a second mounting member made of a flat metal material and having a metal spring fixed at one end to the sample stage, are arranged to face each other, and the second mounting member is arranged by the metal spring. An electron microscope apparatus characterized in that the material is expanded and contracted in the sample insertion direction.   The electron microscope apparatus according to claim 4, wherein the first mounting material and the sample stage are provided with two cavities for driving the two contrast materials without colliding with each other and a metal plate therebetween. A sample holder for mounting a sample for scanning electron microscope observation or scanning transmission electron microscope observation;
A contrast material composed of tungsten having high secondary electron generation efficiency and conductivity when irradiated with an electron beam;
A contrast material driving unit for driving the contrast material,
The sample holder can be shared by a focused ion beam processing apparatus and a scanning transmission electron microscope apparatus, and a mounting material for mounting the sample and a contrast material are disposed on a sample stage provided at a tip portion of the sample holder, At the base end of the sample holder, a switching dial for changing the direction of the tip of the sample holder and the contrast material driving unit are arranged,
The contrast material is arranged by controlling the contrast material driving unit in a predetermined region on the back surface side opposite to the front surface side irradiated with the electron beam in the sample,
The sample holder is configured by arranging a mounting material and two contrast materials for mounting a sample on an arbitrary position on the sample stage,
The two contrast members of the sample holder always have a metal spring, a reduction gear and a micrometer attached to a fixed part inside the sample stage in order to apply a force in the direction opposite to the driving direction of the contrast material. An electron microscope comprising: a metal wire attached to the contrast material driving unit, wherein the contrast material driving unit is rotated by a micrometer to drive the contrast material via a reduction gear and the metal wire. apparatus. A sample holder for mounting a sample for scanning electron microscope observation or scanning transmission electron microscope observation;
A contrast material composed of tungsten having high secondary electron generation efficiency and conductivity when irradiated with an electron beam;
A contrast material driving unit for driving the contrast material,
The sample holder can be shared by a focused ion beam processing apparatus and a scanning transmission electron microscope apparatus, and a mounting material for mounting the sample and a contrast material are disposed on a sample stage provided at a tip portion of the sample holder, At the base end of the sample holder, a switching dial for changing the direction of the tip of the sample holder and the contrast material driving unit are arranged,
The contrast material is arranged by controlling the contrast material driving unit in a predetermined region on the back surface side opposite to the front surface side irradiated with the electron beam in the sample,
The sample holder is configured by arranging a mounting material and two contrast materials for mounting a sample on an arbitrary position on the sample stage,
The sample for the electron microscope used for the sample holder is a convex portion in which the portion including the observation region protrudes in a convex shape, and the outer peripheral portion of the convex portion is uniformly at a predetermined height,
The second mounting material is in contact with the bottom surface of the sample, and the contact surfaces formed on the two first mounting materials facing each other are in contact with the sample surface of the outer peripheral portion of the convex portion of the sample. An electron microscope characterized in that the sample can always be mounted at an arbitrary position with the surface serving as a positioning stopper between the sample surface of the outer peripheral portion of the convex portion of the sample and the bottom surface of the sample apparatus. An electron microscope apparatus equipped with a pole piece-mounted scanning transmission electron microscope,
A sample holder for mounting a sample for performing the scanning transmission electron microscope observation;
Two contrast materials composed of tungsten having high secondary electron generation efficiency and conductivity when irradiated with an electron beam;
Two contrast material driving units for driving the contrast material,
The contrast material is arranged by controlling the contrast material driving unit in a predetermined region on the back surface side opposite to the front surface side irradiated with the electron beam in the sample,
Since the two contrast materials are not affected by the sample film thickness of the non-flaked peripheral portion of the electron microscope sample, the width of the sample is smaller than that of the thin piece region of the sample, and the non-flaked sample peripheral portion is An electron microscope apparatus comprising a metal plate having a size that is not damaged, wherein the contrast material is installed at a height having a predetermined distance from a surface opposite to the observation surface. An electron microscope apparatus equipped with a pole piece-mounted scanning transmission electron microscope,
A sample holder for mounting a sample for performing the scanning transmission electron microscope observation;
Two contrast materials composed of tungsten having high secondary electron generation efficiency and conductivity when irradiated with an electron beam;
Two contrast material driving units for driving the contrast material,
The contrast material is arranged by controlling the contrast material driving unit in a predetermined region on the back surface side opposite to the front surface side irradiated with the electron beam in the sample,
In the space where the tip of the sample holder provided inside the pole piece of the electron microscope can move, the two contrast materials are arranged at an arbitrary height opposite to the observation direction of the sample observation surface mounted on the sample holder. An electron microscope apparatus having a function of driving only in a direction perpendicular to the incident direction of the electron beam at the arbitrary height.

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