JP5125174B2 - Microsample processing observation method and apparatus - Google Patents

Description

  The present invention researches and develops electronic devices such as semiconductor devices, liquid crystal devices, magnetic heads, and micro devices that require observation and analysis of not only the surface of the object to be observed but also the internal cross section close to the surface. The present invention relates to an apparatus system used as an observation / analysis / evaluation means in manufacturing and manufacturing.

In the manufacture of semiconductor components such as dynamic random access memory, semiconductor devices such as microprocessors and semiconductor lasers, and electronic components such as magnetic heads, product characteristics are inspected during or at the end of the manufacturing process for product quality control. Is done. In the inspection, measurement of manufacturing dimensions, inspection of circuit pattern defects, and analysis of foreign matter are performed. For this reason, various means are prepared and used.

In particular, when there is an abnormal part inside the product, the conventional focused ion beam (Focused Ion
Beam: FIB) An opportunity to use a microfabrication observation apparatus combining an electron microscope and an electron microscope is increasing. This apparatus is disclosed in Patent Document 1.

A schematic configuration of the same type of apparatus will be described with reference to FIG. A focused ion beam apparatus having a scanning electron microscope function has a vacuum sample chamber 60, and includes a focused ion beam optical system 31, an FIB irradiation, which includes an ion source 1, an ion beam scanning deflector 3, a lens 2, and the like. A secondary particle detector 6 for detecting secondary electrons and secondary ions emitted from the sample by a sample 6, a sample table 24 on which a wafer 21 such as a semiconductor wafer or a semiconductor chip is placed, and the like are arranged. Further, a scanning electron microscope optical system 41 including an electron gun 7 that emits an electron beam, an electron beam lens 9, an electron beam scanning deflector 10, and the like is installed.

Next, the operation of this apparatus will be described. First, the ions emitted from the ion source 1 are irradiated onto the wafer 21 through the lens 31. The FIB 4 is bundled to a diameter of several nanometers to about 1 micrometer on the sample. When the FIB 4 is irradiated onto the wafer 21, the constituent atoms on the sample surface are released into the vacuum by a sputtering phenomenon. Therefore, by scanning the FIB 4 using the ion beam scanning deflector 3, processing from the micrometer level to the submicrometer level can be performed. Therefore, the wafer 21 as a sample in FIG. 14 is placed on the sample stage 24 inside the apparatus, and the observation point p1 designated by the coordinate value is located, and then the observation point is irradiated with FIB 4 to dig a groove, as shown in FIG. An internal cross section s1 of the observation location is created. An outer surface and an inner wall surface of the created slot are observed with a scanning electron microscope function by electron beam irradiation, or analyzed appropriately by the analyzer 51. Note that in a conventional microfabrication observation apparatus used in a wafer process, a focused ion beam optical system and an electron beam optical system are arranged so that both beam axes intersect at an observation site on the sample surface.

Recently, a method has been devised in which a micro-sample cut out of a micron-order region including the observation site is taken out of the processing observation device, transferred to a separately prepared device, and further processed into an optimal shape for observation and analysis. It's being used. This method is disclosed in Patent Document 2.

In this method, as shown in FIG. 17, first, the posture of the sample 102 is maintained so that the FIB 4 irradiates at a right angle to the surface of the sample 102, the FIB 4 is scanned in a rectangular shape on the sample, and a required depth is formed on the sample surface. The square hole 107 is formed (FIG. 17A). Next, the sample 102 is inclined to form the bottom hole 108. The inclination angle of the sample 102 is changed by a sample table (not shown) (FIG. 17B). The posture of the sample 102 is changed, the sample 102 is set so that the surface of the sample 102 is perpendicular to the FIB 4 again, and a notch groove 109 is formed (FIG. 17C).
. A manipulator (not shown) is driven, and the tip of the probe 72 at the tip of the manipulator is brought into contact with a portion where the sample 102 is separated (FIG. 17 (d)). The deposition gas 105 is supplied from the gas nozzle 110 and the FIB 4 is locally irradiated to the region including the tip of the probe 72 to form an ion beam assisted deposition film (hereinafter abbreviated as the deposition film 104). A separation portion of the sample 102 in contact with the tip of the probe 72 is connected by a deposition film 104 (FIG. 17).
(E)). The remaining part is cut out with FIB 4 (FIG. 17 (f)), and a micro sample 12, which is a separated sample, is cut out from the sample 102. The separated sample 12 cut out is supported by the connected probe 72 (FIG. 17 (g)). When this micro sample 12 is processed with FIB 4 and the region to be observed is wall processed, a TEM sample (not shown) is obtained. The above is a method for separating a micro sample including a desired analysis region from a sample such as a wafer by using FIB processing and a micro sample transport means. The micro sample separated by this method can be taken out of the micro processing apparatus and introduced into various observation / analysis apparatuses for analysis. However, it cannot be used if you do not want to expose the sample to the atmosphere. Moreover, since a separate device is required, an increase in equipment cost and installation space is inevitable.

JP 11-260307 A JP 05-52721 A

  The conventional methods described above have the following problems.

  Problem (1) In order to observe the hole groove cross section of the sample formed by FIB processing, the hole groove inner wall cross section is observed from an oblique direction by inclining the sample stage. In this case, the tilt angle adjustment range of the sample stage is limited due to the structural distance caused by the working distance of the FIB apparatus, the presence of the objective lens, or the size of the sample stage, and the tilt cannot be increased beyond that. . Accordingly, vertical observation of the groove inner wall cross section is impossible. However, vertical cross-section observation is indispensable for confirmation of processing characteristics such as dry etching, flattening, and thin film formation in the process development of semiconductor device manufacturing, etc., but the apparatus of the above-mentioned known example cannot cope with it.

  Problem (2) Decrease in resolution due to oblique observation is a major problem. When irradiating the wafer surface with an electron beam obliquely from above and observing the cross section of the inner wall of the hole groove, the observation resolution in the direction perpendicular to the wafer surface, that is, the inner wall section of the groove hole is lowered. The reduction rate is about 15% at about 30 °, and reaches 30% at around 45 °, which is most frequently used. Recent miniaturization of semiconductor devices has reached the limit, and it is necessary to measure dimensions and shapes with an accuracy of several nanometers or less. The required observation resolution is 3 nm or less, which has entered the technical limit of the scanning electron microscope. In addition, under such a high resolution, the depth of focus becomes extremely shallow and only a range of several tens of percent of 1 μm is in focus. Therefore, the proper observation range of the device longitudinal section during oblique observation is half the required area. Less often occurs. This problem can be achieved by performing high-speed observation with focus in the entire observation region by performing vertical observation.

Problem (3) Since the observed cross section exists on the wall surface of the minute slot formed on the wafer, the number density of secondary electrons coming out of the hole is reduced as compared with the wafer surface. Therefore, the secondary electron detection efficiency is lowered, leading to a reduction in the S / N of the secondary electron image, and the accuracy of cross-sectional observation is inevitably lowered.

The miniaturization of LSI patterns is steadily progressing at a pace of 30% reduction every 2 to 3 years, and higher resolution is required for observation devices. Furthermore, even if elemental analysis (EDX analysis) is performed by measuring the surface distribution of atomic characteristic X-rays excited by irradiation with an electron beam and performing elemental analysis (EDX analysis), the X-ray generation region due to electron beam penetration into the sample The electron beam diameter is 0.1μm by expanding
Even in the following cases, the surface resolution of the analysis is about 1 μm, which is insufficient for analyzing the cross-section of the LSI element having a fine structure.

  Problem (4) As an example in which cross-sectional vertical observation is indispensable, there are performance evaluations such as etching processing, groove hole embedding, and planarization processing in a wafer process. In order to accurately measure the dimension and shape of a processed cross section, conventionally, a chip size sample including a cross section to be viewed from a wafer is determined and observed with a general-purpose scanning electron microscope or the like. However, with the progress of miniaturization of devices and the increase in diameter of wafers, the work of accurately breaking at the position where the element circuit pattern is desired to be observed is very difficult, and there have been failures. On the other hand, due to insufficient supply capacity of evaluation wafers and price increases, evaluation sample preparation is not allowed to fail.

  Problem (5) Although the method disclosed in Patent Document 2 can ensure a sufficient level of accuracy of observation and analysis, such as resolution, a sample is manufactured in a conventional apparatus, and this is taken out of the apparatus and prepared separately. Since it needs to be introduced into the analyzer, there is a problem that the time required from taking out a minute sample to processing / observation / analysis is several hours. In addition, in the case where the sample is deteriorated due to oxidation or moisture absorption when exposed to the atmosphere, it is difficult to avoid it. Cross-sectional observation of semiconductor devices has recently become important as a useful inspection method during semiconductor manufacturing, and the processing capacity in that case is currently expected to be observed and analyzed at 2 to 3 or more locations per hour. There is a trend that requires processing. In response to this demand, the problem that the processing capacity of the conventional method is extremely low has not been solved.

  In view of the above-mentioned problems, the purpose of this application is to observe the internal cross-section of the target sample in a vertical cross-section, with high resolution, high accuracy, high throughput, no degradation due to atmospheric exposure, and observation / analysis without failure An object of the present invention is to provide an apparatus and a micro sample processing observation method.

The present invention relates to a method for processing and analyzing a micro sample in a sample chamber. The sample placed on a sample stage arranged in the sample chamber is irradiated with an ion beam to extract the micro sample. The present invention relates to a method of elemental analysis by adjusting the orientation and / or position of the micro sample with respect to, irradiating the micro sample with an electron beam, detecting characteristic X-rays.

The present invention also provides a sample stage on which a sample is placed; an irradiation angle changing means for holding a micro sample extracted from the sample and changing an irradiation angle of the ion beam and electron beam to the micro sample; A sample chamber in which the stage and the irradiation angle changing means are arranged; a focused ion beam capable of irradiating the ion beam to the sample placed on the sample stage and the minute sample fixed to the irradiation angle changing means A sample disposed in a sample chamber, comprising: an optical system; an electron beam optical system capable of irradiating the electron beam onto the minute sample fixed to the irradiation angle changing means; and an X-ray detector capable of detecting X-rays. The sample placed on the table is irradiated with an ion beam to extract the micro sample, and the orientation and / or position of the micro sample with respect to the electron beam are adjusted in the sample chamber, and the electron beam is applied to the micro sample. Irradiating the beam to detect the characteristic X-rays, to the micro-sample processing analyzer configured to elements.

The present invention also provides a sample stage on which a sample is placed; an irradiation angle changing means for holding a micro sample extracted from the sample and changing an irradiation angle of the ion beam and electron beam to the micro sample; A sample chamber in which a stage and an irradiation angle changing means are arranged; a focused ion beam optical system capable of irradiating an ion beam to the sample placed on the sample stage and the minute sample held by the irradiation angle changing means; An electron beam optical system capable of irradiating the minute sample held by the irradiation angle changing means with an electron beam; a detector capable of measuring characteristic X-rays excited from the minute sample held by the irradiation angle changing means; A charged particle beam apparatus comprising:

The present invention also provides a sample stage on which a sample is placed; a manipulator that can extract a minute sample from the sample; a second that can hold the minute sample and change the irradiation angle of the ion beam and electron beam to the minute sample. A sample stage; a sample chamber in which the sample stage, the manipulator, and the second sample stage are disposed; an ion in the sample placed on the sample stage and the micro sample held on the second sample stage A focused ion beam optical system capable of irradiating a beam; an electron beam optical system capable of irradiating the minute sample held on the second sample stage with an electron beam; and excited from the minute sample held on the second sample stage And a detector capable of measuring characteristic X-rays.

  According to the present invention, it is possible to realize a micro sample processing and observation apparatus and a micro sample processing and observation method capable of performing internal observation of LSI devices and the like that are increasingly miniaturized with high resolution and high quality in a short time. Furthermore, by performing EDX analysis of a micro sample formed by thin film processing and performing high-precision elemental analysis, it is possible to provide a micro sample processing / observing apparatus with a comprehensive cross-section observation and analysis efficiency.

A configuration and operation of a micro sample processing and observation apparatus according to an embodiment of the present invention will be described.
Example 1
The apparatus configuration and operation of the first embodiment will be described with reference to FIGS. 1 and 2 show the overall configuration of the apparatus, and FIG. 3 shows in detail the configuration around the focused ion beam optical system, scanning electron microscope optical system, and sample stage. In the present embodiment, a wafer handling apparatus is shown among the micro sample processing and observation apparatus of the present invention. FIG. 3 shows a schematic overhead cross-section of FIG. 1, but there are some differences in the orientation and details of the device for convenience of explanation, but this is not an essential difference. In FIG. 1, a focused ion beam optical system 31 and an electron beam optical system 41 are appropriately installed above the vacuum sample chamber 60 at the center of the apparatus system. Inside the vacuum sample chamber 60, a sample stage 24 on which a wafer 21 to be a sample is placed is installed. The two optical systems 31 and 41 are adjusted so that the respective central axes intersect at one point near the surface of the wafer 21. The sample stage 24 incorporates a mechanism for moving the wafer 21 from front to back and from side to side with high accuracy, and is controlled so that a specified position on the wafer 21 is directly below the focused ion beam optical system 31. The sample stage 24 has a function of rotating, up and down, or tilting. An exhaust device (not shown) is connected to the vacuum sample chamber 60 and is controlled to an appropriate pressure. The optical systems 31 and 41 are also individually provided with an exhaust system (not shown) and maintained at an appropriate pressure. The vacuum sample chamber 60 has a wafer introduction unit 61 and a wafer transfer unit 62. A wafer transfer robot 82 and a cassette introducing means 81 are arranged adjacent to the vacuum sample chamber 60. An operation control unit 100 that controls and manages the entire apparatus and a series of processing for sample processing observation evaluation is arranged on the left side of the vacuum sample chamber 60.

Next, the wafer introduction operation of this embodiment will be outlined. When the wafer cassette 23 is placed on the table of the cassette introduction means 81 and a work start command is issued from the operation control console 100, the wafer transfer robot 82 pulls out a wafer as a sample from a designated slot in the cassette, and FIG. The orientation adjusting means 83 shown adjusts the orientation of the wafer 21 to a predetermined position. Next, the wafer 21 is placed on the mounting table 63 when the hatch 62 above the wafer introducing means 61 is opened by the wafer transfer robot 82. When the hatch 62 is closed, a narrow space is formed around the wafer to form a load lock chamber, which is evacuated by a vacuum evacuation means (not shown), and then the mounting table 63 is lowered. Next, the wafer transfer means 61 picks up the wafer 21 on the mounting table 63 and mounts it on the sample table 24 in the center of the vacuum sample chamber 60. The sample stage 24 is provided with means for chucking the wafer 21 as necessary to correct warpage of the wafer 21 and to prevent vibration. The coordinate value of the observation analysis position p 1 on the wafer 21 is input from the operation control unit 100, the sample stage 24 is moved, and the observation analysis position p 1 of the wafer 21 is set just below the focused ion beam optical system 31 and stopped.

  Next, the process of sample processing observation evaluation will be described with reference to FIG. In the micro sample processing and observation apparatus of the present invention, the focused ion beam optical system 31 includes an ion source 1, a lens 2 for focusing an ion beam emitted from the ion source 1, an ion beam scanning deflector 3, and the like, and an electron beam. The optical system 41 includes an electron gun 7, an electron lens 9 that focuses the electron beam 8 emitted from the electron gun 7, and an electron beam scanning deflector 10. In addition, a secondary particle detector 6 for detecting a secondary particle from the wafer 21 by irradiating the wafer 21 with a focused ion beam (FIB) 4 or an electron beam 8, a movable sample stage 24 on which the wafer 21 is placed, a desired In order to specify the position of the sample, the position of the sample stage control device 25 for controlling the position of the sample stage and the tip of the probe 72 are moved to the extraction position of the micro sample, extracted, and irradiated with the focused ion beam (FIB) 4 or the electron beam 8 Then, a manipulator control device 15 for controlling the optimum position and direction for observing and evaluating a specific position of the micro sample and an X-ray detector 16 for detecting atomic characteristic X-rays excited upon irradiation with the electron beam 8. And a deposition gas supply device 17.

  Next, in this embodiment, the process of sample processing observation evaluation after wafer introduction will be outlined. First, in a state where the sample stage is lowered and the tip of the probe 72 is separated from the wafer 21, the probe 72 is moved in the horizontal direction (XY direction) with respect to the sample stage 24, and the tip of the probe 72 is set as the FIB4 scanning region. To do. The manipulator control device 15 retracts the probe 72 after storing the position coordinates.

The FIB 4 is irradiated onto the wafer 21 from the focused ion beam optical system 31, and a groove is formed so as to draw a U-shape across the observation analysis position p2 as shown in FIG. The processing region has a length of about 5 μm, a width of about 1 μm, and a depth of about 3 μm, and is connected to the wafer 21 on one side surface. Thereafter, the sample stage 24 is tilted and processed so as to form a slope of a triangular prism with the FIB 4. However, in this state, the micro sample 22 and the wafer 21 are connected by a support portion.

  Next, after returning the inclination of the sample table 24, the probe 72 at the tip of the manipulator 70 is brought into contact with the end of the micro sample 22 on the micro sample 22, and then deposition gas is deposited at the contact point 75 by irradiation with the FIB 4. Then, the probe 72 is joined and integrated with the micro sample 22. Further, the micro sample 22 is cut by cutting the support S2 with the FIB 4. The micro sample 22 is supported by the probe 72, and the preparation for taking out the surface and the internal cross section for the purpose of observation and analysis as the observation analysis surface p3 of the micro sample 22 is completed.

  Next, as shown in FIG. 5B, the manipulator 70 is operated to lift the micro sample 22 to a height that floats from the surface of the wafer 21. If necessary, the irradiation angle of the FIB 4 is appropriately added to the micro sample 22 while being supported by the probe 72 by rotating the manipulator to form a desired observation cross section p3. As an example of this additional machining, there is a finishing process for making the observation cross section p2 formed obliquely by the taper of the beam of the FIB 4 into a truly vertical cross section. In the cross-section processing / observation performed so far, the side wall of the hole dug by FIB had to be used as the observation surface, but according to the apparatus of this embodiment, it is possible to perform additional machining after lifting. Since the processing can be performed while appropriately moving the observation target surface, it is possible to appropriately form a desired cross section.

Next, the micro sample 22 is rotated, and the manipulator 70 is moved so that the electron beam 8 of the electron beam optical system 41 is substantially perpendicularly incident on the observation cross section p <b> 3 to control the posture of the micro sample 22, and is then stopped. Thereby, the detection efficiency of the secondary electrons in the secondary particle detector 6 is the same as that in the case of observing the outermost surface of the wafer even when the sample cross section is observed. The observation conditions for p3 are very good, the reduction in resolution, which was a problem in the conventional example, can be avoided, and the angle of the observation analysis planes p2 and p3 can be adjusted to a desired angle. become able to.

  In addition, since the micro sample 22 is observed and analyzed while being left in the sample chamber in a vacuum atmosphere without being taken out of the apparatus, the internal cross section of the target sample can be high resolution without being contaminated by foreign air exposure or adhering foreign matter. High-precision observation and analysis at the optimum angle can be realized. Moreover, observation and analysis can be performed with a high processing capacity of 2 to 3 or more locations per hour.

  Furthermore, since the micro sample 22 having the observation cross section p3 can be tilted and moved by the manipulator 70 in the apparatus of the present embodiment, for example, a hole is provided in the observation cross section p2 to provide a three-dimensional fault inside the sample. It is also possible to confirm the formation state.

  In the example of FIG. 3, the manipulator 70 and the electron beam optical system 41 are formed facing each other with the FIB 4 interposed therebetween. In order to reduce the processing / observation time as much as possible by reducing the number of operations of the manipulator 70 and the like, It is desirable that the relative angle between the manipulator 70 and the electron beam optical system 41 is formed to be an angle close to 90 ° in a plane perpendicular to the irradiation direction of the FIB 4. Because of this formation, the manipulator 70 only lifts the micro sample 22 from the wafer 21, rotates the probe 72 so that the observation section p2 is perpendicular to the electron beam 8, and other fine tuning operations. It is because it is sufficient to perform.

  In the above description, an example in which the micro sample 22 is lifted from the wafer 21 by the manipulator 70 is used. However, the present invention is not limited to this, and the micro sample 22 is lifted by lowering the wafer 21 as a result. Also good. In this case, the sample stage 24 is provided with a Z-axis moving mechanism for moving the wafer 21 in the Z direction (the optical axis direction of the FIB 4). According to such a configuration, it is possible to cut out and lift the micro sample 22 in a state where the optical axis of the electron beam optical system 41 is positioned at the position of the micro sample 22 in the wafer 21. In this case, the process from cutting out the micro sample 22 with the FIB 4 to observing the observation cross section p2 can be executed while confirming with an electron microscope, and can be realized without much change of the irradiation position during that time. Become.

  The electron beam optical system 41 provides an electron microscope image obtained by viewing the surface of the wafer 21 from an oblique direction. If the model cross-section and the processing arrival position by the FIB 4 are superimposed on the electron microscope image, the FIB 4 is used. The cross-section processing state can be easily confirmed. To superimpose and display the planned cross section on the electron microscope image, an animation showing the cross section is superimposed on the electron microscope based on the set processing depth and the dimensions in the electron microscope image calculated from the magnification. .

Also, if the processing depth in real time is calculated based on the FIB current, acceleration voltage, sample material, etc., and the animation showing the current processing depth is superimposed on the electron microscope image, the processing progress It becomes easy to confirm. Since the electron beam optical system 41 of the apparatus of this embodiment is arranged at a bird's-eye view with respect to the wafer 21 and the electron microscope image becomes a bird's-eye view image, the above-mentioned animation is displayed in a three-dimensional manner, so that the processing status can be changed. It can be confirmed more clearly.

  Further, the apparatus according to the present embodiment has a function of setting a cross-sectional processing position on a scanning ion microscope image (SIM image) formed based on secondary electrons obtained by scanning the wafer 21 with FIB. However, it is also possible to provide a sequence that automatically performs other settings and apparatus operations (drive of the sample stage and determination of the processing position by the ion beam) based on the input of the cross-sectional position and the processing depth. In this case, first, a portion to be the upper side of the observation cross section p3 is specified on the SIM image, and a processing depth (dimension in the depth direction of the observation cross section p3) is set. Based on these two settings, the formation angle of the inclined portion of the micro sample 22 and the observation analysis plane p3 are automatically determined, and the subsequent processing is automatically performed by this setting. It is also possible to provide a sequence for automatically performing the subsequent processing by setting the observation analysis plane p3 (rectangular region) on the SIM image and setting the processing depth.

  In the apparatus of this embodiment, the probe 72 is provided with a fine movement mechanism (not shown) so that the observation cross section p3 is properly positioned with respect to the electron beam 8 after the micro sample 22 is lifted. For example, in the example of FIG. 4, simply rotating the probe 72 causes the micro sample 22 to rotate around the point of attachment with the probe 72, so the observation cross section p3 is only rotated about the longitudinal direction of the micro sample 22 as the rotation axis. Instead, a rotation component with the FIB 4 irradiation direction as the rotation axis is included. The probe 72 is provided with a fine movement mechanism for removing the rotation component, and the fine movement mechanism is operated at a timing different from the rotation operation in accordance with the rotation of the probe 72, whereby the electron beam 8 optical axis. It is possible to accurately position the observation cross section p3 in the vertical plane with respect to. The same effect can also be obtained by arranging the probe 72 at an angle slightly larger than 90 ° with respect to the electron beam optical system 41 in a plane perpendicular to the optical axis of the FIB 4. In this case, the effect is achieved by arranging the probe 72 with respect to the electron beam optical system 41 at a rotation component + 90 ° with the irradiation direction of the focused ion beam as the rotation axis.

  The rotation component having the FIB 4 irradiation direction as the rotation axis is included because the rotation axis of the probe 72 is inclined with respect to the observation analysis plane p2 and the observation cross section p3. That is, if the probe 72 is formed so that the rotation axis is parallel to the observation analysis plane p2 and the observation cross section p3, the above problem can be solved. Therefore, in the case of an apparatus having a mirror structure as shown in FIG. 3, the rotation axis of the probe 72 is preferably formed parallel to the surface of the wafer 21 (perpendicular to the optical axis of the FIB 4). By bending the tip of the probe 72, the micro sample 22 can be supported even with a probe having a rotation axis parallel to the surface of the wafer 21. Further, the rotation axis of the probe 72 may be formed so as to be perpendicular to the electron beam optical system 41 so that the sample can be moved below the optical axis of the electron beam 8 by the rotation and parallel movement of the probe.

  Further, if a mechanism for transmitting the driving power from the manipulator control device 15 to a probe having a height different from that of the probe holding unit 71 and having a rotation axis parallel to the wafer 21 is provided, the micro sample 22 is enlarged. The observation cross section p3 can be aligned with the electron beam 8 without being swung.

Since the micro sample 22 suspended by the probe 72 is easily affected by vibrations, the micro sample 22 is obstructed on the wafer 21 when observing and analyzing in an installation environment with high magnification and high vibration. The vibration of the micro sample can be greatly suppressed by landing at a position where it does not exist, or landing on the micro sample port provided in the empty space around the wafer on the sample stage, and high quality observation and analysis are possible. The example shown in FIG. 18 is an example thereof, and shows an example in which the seismic resistance is improved by grounding the cut out micro sample 22 on the wafer 21. In the case of adopting such a method, it is preferable to set a sequence in advance so that the grounding position of the micro sample matches the optical axis of the electron beam 8.

In the preparation of the micro sample 22 shown in FIG. 4, the micro sample 22 was processed into a pentahedron. Thereby, in particular, there is little waste in processing for separating a micro sample, and a micro sample can be manufactured in a short time. However, although illustration is omitted, it goes without saying that the effect of the present invention can be obtained even with a tetrahedron that can minimize the machining time because of the smallest machining surface or a shape close to this.

Further, in the EDX analysis in which the electron beam 8 is scanned on the micro sample 22, if the micro sample 22 is formed thinner in the electron beam irradiation direction than the penetration distance of about 1 μm by the electron beam irradiation, the elemental analysis accuracy is improved.
(Example 2)
The configuration and operation of the micro sample processing and observation apparatus according to the second embodiment of the present invention will be described with reference to FIGS. Here, FIG. 7 shows a plan view of FIG. 6. For convenience of explanation, although there are some differences in the orientation and details of the device, they are not essential differences. In this apparatus, a focused ion beam optical system 31 is vertically installed on the upper portion of the vacuum sample chamber 60 in the center of the apparatus system, and a second focused ion beam optical system 32 is further inclined at about 40 °. Yes. The electron beam optical system 41 is installed with an inclination of about 45 °. The three optical systems 31, 32, and 41 are adjusted so that their central axes intersect at one point near the surface of the wafer 21. Similarly to the apparatus of the first embodiment, a sample stage 24 on which a wafer 21 to be a sample is placed is installed in the vacuum sample chamber 60. However, although the sample stage 24 of this embodiment has functions of horizontal movement (XY), rotation, and vertical movement, the tilt function is not necessarily required.

  Next, the sample preparation operation by this apparatus will be described with reference to FIG. First, the FIB 4 is irradiated onto the wafer 21 from the focused ion beam optical system 31, and grooves are formed so as to draw a U-shape across the observation analysis position p2 as shown in FIG. The process up to this point is the same as in the first embodiment. Next, the slope of the triangular prism is formed by FIB 4 from the other focused ion beam optical system 32. However, in this state, the micro sample 22 and the wafer 21 are connected by a support portion. Thereafter, a micro sample is again cut out from the focused ion beam optical system 31 using the FIB 4 as in the first embodiment. That is, after the probe 72 at the tip of the probe holding portion 71 of the manipulator 70 is brought into contact with the end of the micro sample 22 on the micro sample 22, the deposition gas is deposited on the contact point 75 by irradiation of the FIB 4, and the probe 72 is made micro. The sample 22 is joined and integrated, and the support portion is cut with the FIB 4 to cut out the micro sample 22. Thereafter, the steps such as observation and analysis of the micro sample 22 are the same as those in the first embodiment.

  As described above, this embodiment can perform high-resolution and high-speed observation analysis as in the first example. In the present embodiment, in particular, by using two focused ion beam optical systems, it is possible to eliminate the inclination of the sample stage. Since the tilt mechanism of the sample stage can be omitted, the positioning accuracy of the sample stage can be improved several times to 10 times or more. At the LSI device manufacturing site, in recent years, various types of wafer inspection / evaluation devices have been subjected to foreign matter inspection and defect inspection, and the characteristics and coordinate data of abnormal points on the wafer have been recorded. It has become customary to determine the designated coordinate position and perform observation analysis. Since the positioning accuracy is high, it is possible to automate the position indexing process of the observation location of the sample wafer 21 and simplify the algorithm. As a result, the required time can be greatly shortened, so that high throughput can be obtained. Furthermore, since the sample stage having no tilting mechanism is small and lightweight, high rigidity is easily obtained and the reliability is increased, higher quality observation analysis can be performed, and the apparatus can be reduced in size and cost.

In addition, by making the focused ion beam optical system 31 wait for the swing function so that the two positions of the vertical position and the tilt position are appropriately moved, the same processing as in the second embodiment can be performed without tilting the sample stage 24. Thus, the effects of the present invention can be obtained.
(Example 3)
The configuration and operation of a micro sample processing and observation apparatus according to a third embodiment of the present invention will be described with reference to FIGS. Here, FIG. 9 shows a plan view of FIG. 8. For convenience of explanation, although there are some differences in the orientation and details of the device, this is not an essential difference. In the apparatus of this embodiment, the focused ion beam optical system 33 is installed at an inclination of about 45 ° above the vacuum sample chamber 60 at the center of the apparatus system. The electron beam optical system 42 is also installed with an inclination of about 45 °. The two optical systems 33 and 42 are adjusted so that the respective central axes intersect at one point near the surface of the wafer 21. As in the apparatus of the first embodiment, a sample stage 24 is installed inside the vacuum sample chamber 60. As in the second embodiment, the sample stage 24 does not have a tilt function.

  Next, in this embodiment, the process of sample processing observation evaluation after wafer introduction will be described with reference to FIG. First, in a state where the sample stage is lowered and the tip of the probe 72 is separated from the wafer 21, the probe 72 is moved in the horizontal direction (XY direction) with respect to the sample stage 24, and the tip of the probe 72 is set as the FIB4 scanning region. To do. The manipulator control device 15 retracts the probe 72 after storing the position coordinates.

  The direction of the sample stage is adjusted so that the intersecting line between the vertical plane including the optical axis of the focused ion beam optical system 33 and the upper surface of the wafer overlaps the observation cross section of the sample to be formed. Next, the FIB 4 is irradiated onto the wafer 21 and scanned to form a vertical section C1 having a length and depth necessary for observation. Next, an oblique cut surface C2 intersecting with the formed cross section is formed. When the cut surface C2 is formed, the direction is determined by horizontally rotating the sample stage to a position where the slope angle can be obtained. Next, an oblique groove is formed by FIB 4 in parallel with the vertical cutting line. Further, one end C3 is cut at right angles to the groove. The processing region has a length of about 5 μm, a width of about 1 μm, and a depth of about 3 μm, and is connected to the wafer 21 in a cantilever state having a length of about 5 μm. Next, after the probe 72 at the tip of the manipulator 70 is brought into contact with the end of the micro sample 22 on the micro sample 22, the deposition gas is deposited at the contact point 75 by irradiation of the FIB 4, and the probe 72 is joined to the micro sample 22. And unite. Thereafter, the other end C4 that supports the micro sample with the FIB 4 is cut with the FIB 4, and the micro sample 22 is cut out. The micro sample 22 is supported by the probe 72, and the preparation for taking out the surface and the internal cross section for the purpose of observation and analysis as the observation analysis surface p3 of the micro sample 22 is completed. The subsequent processing is performed except that the orientation of the sample stage 24 needs to be appropriately adjusted when setting the orientation of the micro sample in the direction optimal for processing / observation by the focused ion beam optical system or observation by the electron beam optical system. The description is omitted since it is almost the same as the first embodiment.

As described above, this embodiment can perform high-resolution and high-speed observation analysis as in the first example. This embodiment has an advantage that a single sample ion beam optical system is tilted with respect to the sample stage, so that a minute sample can be cut out and extracted from the wafer without giving the tilt function to the sample stage. Since it is necessary to mount many devices around the optical system, space is difficult, and the total mass of these devices is large, which makes it difficult to design including securing the rigidity of the mounting board. Maintenance is also a concern. In this embodiment, the tilting mechanism of the sample stage is not required, and only one focused ion beam optical system is required. Therefore, the structure is simple, lightweight, and the cost can be reduced.
Example 4
A schematic configuration of a micro sample processing and observation apparatus according to a fourth embodiment of the present invention will be described with reference to FIG. In this embodiment, a second sample stage 18 and a second sample stage controller 19 for controlling the angle and height of the second sample stage are added to the basic configuration of the micro sample processing and observation apparatus shown in FIG. Is. The process from the focused ion beam optical system 31 in this embodiment to irradiating the sample with the ion beam and extracting the minute sample from the wafer is the same as in the first embodiment. In this embodiment, instead of observing and analyzing the extracted micro sample in a state supported by a manipulator, the micro sample is fixed to the second sample stage for observation and analysis.

FIG. 11 shows a state in which the micro sample 22 is fixed to the second sample stage 18. Although a member having a flat surface is used for the minute sample fixing portion of the second sample stage 18 of the present embodiment, it does not matter whether the surface is flat. The bottom surface of the micro sample is brought into contact with the second sample stage 18, the deposition gas is deposited at the contact point between the second sample stage 18 and the micro sample 22 by the FIB 4, and the assist deposit film 76 is applied to the second sample stage 18. The micro sample 22 is fixed. It should be noted that the FIB 4 irradiation angle is set to prevent inconvenience of foreign matter adsorbing to the surface of the observation cross section or destruction of the surface of the observation cross section when the micro sample 22 is created or when the deposition gas is deposited. It is also possible to create a desired observation cross section by irradiating the FIB 4 after appropriately setting the angle by operating the second sample stage so as to be parallel to the observation cross section of the micro sample.

  By installing the second sample stage shown in FIG. 12, a plurality of minute samples can be handled together. The micro sample 22 is extracted from the wafer 21, fixed to an appropriate position on the second sample table 18 beside the sample table, and the operation of extracting the next micro sample 22 is repeated, so that a plurality of wafers 21 are fixed to the sample table 24. Individual cross-section observation and elemental analysis are possible, and the distribution of the cross-sectional structure over the entire wafer 21 can be efficiently examined.

  In FIG. 12, several micro samples are fixed side by side on the second sample stage 18, and the stop orientation of the sample stage 24 and the angle of the second sample stage 18 so that the micro sample 22 is at an appropriate angle with respect to the electron beam 8. If the sample observation / analysis is performed in a state in which both are adjusted, it is possible to repeatedly observe and analyze a plurality of micro samples continuously or while comparing them, so that the cross-sectional structure and element distribution over the entire wafer 21 are examined in detail and efficiently. be able to. Further, the second sample stage 18 shown in FIG. 13 can arrange a group of micro samples on the outer peripheral surface of a rotatable columnar sample stage, and can handle a larger number of micro samples at a time than in the case of FIG. it can.

  Further, the micro sample 22 is attached to and removed from the designated position in the sample collection tray and is collected, and a micro sample identification means is attached, so that it is taken out again for observation and analysis when a subsequent detailed evaluation is required. It is also possible.

As described above, the secondary electron detection efficiency similar to that in the case of observing the wafer surface can be obtained in this embodiment, the angle of observation analysis can be adjusted to a desired angle including vertical observation, vacuum The observation condition of the micro sample 22 becomes very good because it can be observed while it is placed in the sample chamber in the atmosphere, etc., so that it is possible to avoid the decrease in resolution, which has been a problem in the past, and to perform an optimal and detailed observation analysis quickly. It can be performed with high efficiency. As a result, high quality observation analysis can be performed with high throughput.

1 is an overall apparatus configuration of an embodiment of the present invention. 1 is a plan view of the overall configuration of an apparatus according to an embodiment of the present invention. The apparatus detailed structure of one Example of this invention. The example of the micro sample processing method of this invention. The example of the micro sample observation method of this invention. The whole apparatus structure of the 2nd Example of this invention. The top view with the whole apparatus structure of the 2nd Example of this invention. The whole apparatus structure of the 3rd Example of this invention. The top view with the whole apparatus structure of the 3rd Example of this invention. The apparatus detailed structure of 4th Example of this invention. The principal part detail drawing of 4th Example of this invention. The principal part detail drawing of 4th Example of this invention. The principal part detail drawing of 4th Example of this invention. Conventional processing method. Conventional observation method. The schematic block diagram of the conventional apparatus. Conventional micro sample preparation method. The example of the micro sample observation method of this invention. The example of the micro sample observation method of this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Ion source, 2 ... Lens, 3 ... Ion beam scanning deflector, 4 ... Focused ion beam (FIB), 5 ... Central control display apparatus, 6 ... Secondary electron detector, 7 ... Electron gun, 8 ... Electron beam , 9 ... Electron lens, 10 ... Electron beam scanning deflector, 14 ... Manipulator, 15 ... Manipulator control device, 16 ... X-ray detector, 17 ... Deposition gas supply device, 18 ... Second sample stage,
DESCRIPTION OF SYMBOLS 19 ... 2nd sample stand control apparatus, 21 ... Wafer, 22 ... Micro sample, 23 ... Cassette, 24 ... Sample stand, 25 ... Sample stand control apparatus, 31 ... Focused ion beam optical system, 32 ... Focused ion beam optical system, DESCRIPTION OF SYMBOLS 41 ... Electron beam optical system, 51 ... Analysis apparatus, 60 ... Vacuum sample chamber, 61 ... Wafer conveyance means, 62 ... Hatch, 63 ... Mounting table, 70 ... Manipulator, 71 ... Probe holding part, 72 ... Probe, 75 ... Assist Deposition film, 81 ... cassette introduction means, 82 ... wafer transfer robot, 83 ... orientation adjustment means, 90 ... gas introduction pipe, 100 ... operation control unit, 101 ... sample, 105 ... deposition gas, 107 ... square hole, 108 ... Bottom hole 109... Crevice groove 110. Gas nozzle p1... Observation location p2. Observation analysis plane p3. Observation analysis plane s1 Internal cross section s2 Support .

Claims (47)

A method for analyzing and processing a micro sample in a sample chamber,
A sample placed on a sample stage placed in the sample chamber is irradiated with an ion beam to extract a micro sample,
A method of performing elemental analysis by adjusting the orientation and / or position of the micro sample with respect to the electron beam in the sample chamber, irradiating the micro sample with the electron beam, detecting characteristic X-rays. It is a micro sample processing analysis method according to claim 1,
The method for analyzing and processing a minute sample, wherein the elemental analysis is EDX analysis. It is a micro sample processing analysis method according to claim 1,
In the sample chamber, wherein said excised small sample is characterized Tei Rukoto held in the manipulator. It is a micro sample processing analysis method according to claim 1,
In the sample chamber, wherein said excised small sample is characterized Tei Rukoto held in the probe. It is a micro sample processing analysis method in any one of Claims 1-4,
A method of holding the extracted micro sample on a second sample stage in a sample chamber. A micro sample processing analysis method according to claim 5,
The method, wherein the second sample stage can hold a plurality of the micro samples. A micro sample processing analysis method according to claim 6,
A method for processing and analyzing a micro sample, wherein the micro sample is repeatedly extracted from a sample and held on the second sample stage, and elemental analysis of a plurality of the micro samples is performed. A micro sample processing analysis method according to claim 6,
A method for processing and analyzing a micro sample, wherein element analysis is performed while continuously or comparing a plurality of micro samples. It is a micro sample processing analysis method in any one of Claims 1-8,
The method wherein the sample is any one of a dynamic random access memory, a semiconductor memory, a microprocessor, a semiconductor chip, a semiconductor laser, a semiconductor wafer, a semiconductor device, a magnetic head, an electronic device, a liquid crystal device, or a microdevice. It is a micro sample processing analysis method in any one of Claims 1-9,
A method characterized in that the shape of the micro sample is a pentahedron. It is a micro sample processing analysis method in any one of Claims 1-9,
The method for forming a micro sample is a tetrahedron. It is a micro sample processing analysis method in any one of Claims 1-11,
A method comprising irradiating a minute sample with an electron beam and measuring a surface distribution of excited atomic characteristic X-rays with an X-ray detector. It is a micro sample processing analysis method in any one of Claims 1-12,
A method of adjusting a direction and / or position of the micro sample with respect to an ion beam in a sample chamber and irradiating the micro sample with an ion beam to form a thin film on the micro sample. A micro sample processing analysis method according to claim 13,
A method for processing and analyzing a micro sample, wherein the direction of the micro sample is adjusted so that an electron beam is incident on the thin film substantially perpendicularly. In the micro sample processing analysis method in any one of Claim 13 or 14,
The method is characterized in that the thin film is processed to be thinner in the electron beam irradiation direction than the electron penetration distance by irradiation of the electron beam to the sample. In the micro sample processing analysis method in any one of Claims 1-15,
A method of adjusting an orientation of the micro sample so that an incident angle of the ion beam with respect to an observation cross section of the micro sample is substantially parallel, and irradiating the micro sample with the ion beam. A sample stage on which the sample is placed;
Irradiation angle changing means for holding a micro sample extracted from the sample and changing the irradiation angle of the ion beam and electron beam to the micro sample;
A sample chamber in which the sample stage and the irradiation angle changing means are arranged;
A focused ion beam optical system capable of irradiating the ion beam to the sample placed on the sample stage and the minute sample fixed to the irradiation angle changing means;
An electron beam optical system capable of irradiating the electron beam onto the minute sample fixed to the irradiation angle changing means;
An X-ray detector capable of detecting X-rays;
With
A sample placed on a sample stage placed in the sample chamber is irradiated with an ion beam to extract a micro sample,
A micro sample processing / analysis apparatus configured to adjust an orientation and / or position of the micro sample with respect to an electron beam in a sample chamber, irradiate the micro sample with the electron beam, detect characteristic X-rays, and form an element. The micro sample processing / analysis apparatus according to claim 17,
The method for analyzing and processing a minute sample, wherein the elemental analysis is EDX analysis. A micro sample processing / analysis apparatus according to claim 17 or 18,
The irradiation angle changing means includes a manipulator capable of holding the minute sample. A micro sample processing / analysis apparatus according to claim 17 or 18,
The irradiation angle changing means includes a probe capable of holding the minute sample. A micro sample processing / analysis apparatus according to claim 17 or 18,
The apparatus according to claim 1, wherein the irradiation angle changing means includes a second sample stage capable of holding the minute sample. The micro sample processing / analysis apparatus according to claim 21,
The apparatus, wherein the second sample stage can hold a plurality of the micro samples. A micro sample processing and analyzing apparatus according to claim 22,
A micro sample processing / analysis apparatus configured to perform elemental analysis of a plurality of micro samples by repeatedly extracting the micro sample from a sample and holding the micro sample on the second sample stage. The micro sample processing and analyzing apparatus according to claim 23,
A micro sample processing / analysis apparatus configured to perform elemental analysis while continuously or comparing a plurality of micro samples. A micro sample processing and analyzing apparatus according to any one of claims 17 to 24,
The sample is any one of a dynamic random access memory, a semiconductor memory, a microprocessor, a semiconductor chip, a semiconductor laser, a semiconductor wafer, a semiconductor device, a magnetic head, an electronic device, a liquid crystal device, or a micro device. . A micro sample processing and analyzing apparatus according to any one of claims 17 to 25,
An apparatus characterized in that the shape of the micro sample is a pentahedron. A micro sample processing and analyzing apparatus according to any one of claims 17 to 25,
An apparatus characterized in that the shape of the micro sample is a tetrahedron. A micro sample processing / analysis apparatus according to any one of claims 17 to 27,
The X-ray detector measures the surface distribution of atomic characteristic X-rays excited from a minute sample. A micro sample processing and analyzing apparatus according to any one of claims 17 to 28,
An apparatus characterized in that in the sample chamber, the orientation and / or position of the micro sample with respect to the ion beam is adjusted, and the micro sample is irradiated with the ion beam to form a thin film on the micro sample. The micro sample processing / analysis apparatus according to claim 29,
An apparatus configured to adjust the direction of the minute sample so that an electron beam is incident on the thin film substantially perpendicularly. The micro sample processing / analysis apparatus according to claim 29 or 30,
The apparatus is characterized in that the thin film is processed to be thinner in the electron beam irradiation direction than the electron penetration distance by irradiation of the electron beam to the sample. The micro sample processing / analysis apparatus according to claim 17,
An apparatus characterized by adjusting the direction of the micro sample so that the incident angle of the ion beam with respect to the observation cross section of the micro sample is substantially parallel and irradiating the micro sample with the ion beam. A sample stage on which the sample is placed;
Irradiation angle changing means for holding a micro sample extracted from the sample and changing the irradiation angle of the ion beam and electron beam to the micro sample;
A sample chamber in which the sample stage and the irradiation angle changing means are arranged;
A focused ion beam optical system capable of irradiating the sample placed on the sample stage and the minute sample held by the irradiation angle changing means with an ion beam;
An electron beam optical system capable of irradiating the minute sample held by the irradiation angle changing means with an electron beam;
A detector capable of measuring characteristic X-rays excited from the minute sample held in the irradiation angle changing means;
A charged particle beam apparatus comprising: A charged particle beam device according to claim 33,
The irradiation angle changing means is a manipulator. A charged particle beam device according to claim 33,
The irradiation angle changing means is a probe. A charged particle beam device according to claim 33,
The irradiation angle changing means is a second sample stage. The charged particle beam device according to claim 36,
The apparatus, wherein the second sample stage can hold a plurality of the micro samples. A charged particle beam device according to claim 37,
An apparatus capable of elemental analysis of a plurality of minute samples held on the second sample stage continuously or comparing them. A charged particle beam device according to any of claims 33-38,
The sample is any one of a dynamic random access memory, a semiconductor memory, a microprocessor, a semiconductor chip, a semiconductor laser, a semiconductor wafer, a semiconductor device, a magnetic head, an electronic device, a liquid crystal device, or a micro device. . A charged particle beam device according to any of claims 33-38,
An apparatus characterized in that the shape of the micro sample is a pentahedron. A charged particle beam device according to any of claims 33-38,
An apparatus characterized in that the shape of the micro sample is a tetrahedron. A charged particle beam device according to any of claims 33-41,
An apparatus in which the detector measures a surface distribution of characteristic X-rays excited from a minute sample. A charged particle beam device according to any of claims 36-42,
An apparatus characterized in that the orientation of the second sample stage can be controlled so that the observation cross section of the micro sample is substantially perpendicular to the electron beam irradiation direction. A charged particle beam device according to any of claims 36-43,
An apparatus characterized in that the orientation of the second sample stage can be controlled so that the observation cross section of the micro sample is substantially parallel to the ion beam irradiation direction. A charged particle beam device according to any of claims 33-44,
An apparatus characterized by irradiating an ion beam to the micro sample and forming a thin film on the micro sample. A charged particle beam device according to claim 45,
The apparatus is characterized in that the thin film is thinner in an electron beam irradiation direction than an electron penetration distance by irradiation of the electron beam onto the sample. A sample stage on which the sample is placed;
A manipulator capable of extracting a minute sample from the sample;
A second sample stage for holding the micro sample and changing an irradiation angle of the ion beam and electron beam to the micro sample;
A sample chamber in which the sample stage, the manipulator, and the second sample stage are disposed;
A focused ion beam optical system capable of irradiating an ion beam to the sample placed on the sample stage and the minute sample held on the second sample stage;
An electron beam optical system capable of irradiating the minute sample held on the second sample stage with an electron beam;
A detector capable of measuring characteristic X-rays excited from the micro sample held on the second sample stage;
A charged particle beam apparatus comprising:

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