JP3800520B2 - 半導体集積回路装置と半導体装置 - Google Patents

半導体集積回路装置と半導体装置 Download PDF

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Publication number
JP3800520B2
JP3800520B2 JP2002046740A JP2002046740A JP3800520B2 JP 3800520 B2 JP3800520 B2 JP 3800520B2 JP 2002046740 A JP2002046740 A JP 2002046740A JP 2002046740 A JP2002046740 A JP 2002046740A JP 3800520 B2 JP3800520 B2 JP 3800520B2
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JP
Japan
Prior art keywords
mosfet
pair
transistor
drain
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2002046740A
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English (en)
Japanese (ja)
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JP2003249829A (ja
JP2003249829A5 (enExample
Inventor
佳代子 斉藤
貢 楠
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Technology Corp
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Renesas Technology Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Renesas Technology Corp filed Critical Renesas Technology Corp
Priority to JP2002046740A priority Critical patent/JP3800520B2/ja
Priority to US10/360,868 priority patent/US6806743B2/en
Publication of JP2003249829A publication Critical patent/JP2003249829A/ja
Publication of JP2003249829A5 publication Critical patent/JP2003249829A5/ja
Application granted granted Critical
Publication of JP3800520B2 publication Critical patent/JP3800520B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
    • H03F3/4521—Complementary long tailed pairs having parallel inputs and being supplied in parallel
    • H03F3/45219—Folded cascode stages
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/72—Gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45396—Indexing scheme relating to differential amplifiers the AAC comprising one or more switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45506—Indexing scheme relating to differential amplifiers the CSC comprising only one switch

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
  • Logic Circuits (AREA)
JP2002046740A 2002-02-22 2002-02-22 半導体集積回路装置と半導体装置 Expired - Fee Related JP3800520B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2002046740A JP3800520B2 (ja) 2002-02-22 2002-02-22 半導体集積回路装置と半導体装置
US10/360,868 US6806743B2 (en) 2002-02-22 2003-02-10 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002046740A JP3800520B2 (ja) 2002-02-22 2002-02-22 半導体集積回路装置と半導体装置

Publications (3)

Publication Number Publication Date
JP2003249829A JP2003249829A (ja) 2003-09-05
JP2003249829A5 JP2003249829A5 (enExample) 2005-08-04
JP3800520B2 true JP3800520B2 (ja) 2006-07-26

Family

ID=27750653

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002046740A Expired - Fee Related JP3800520B2 (ja) 2002-02-22 2002-02-22 半導体集積回路装置と半導体装置

Country Status (2)

Country Link
US (1) US6806743B2 (enExample)
JP (1) JP3800520B2 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4532847B2 (ja) * 2003-05-16 2010-08-25 株式会社リコー 差動増幅器
KR100577566B1 (ko) * 2004-12-28 2006-05-08 삼성전자주식회사 입력버퍼회로
US7310018B2 (en) 2005-08-23 2007-12-18 Micron Technology, Inc. Method and apparatus providing input buffer design using common-mode feedback
JP4626456B2 (ja) * 2005-09-13 2011-02-09 ソニー株式会社 差動増幅回路、レシーバ回路、発振回路及びドライバ回路
US8010813B2 (en) * 2005-11-30 2011-08-30 International Business Machines Corporation Structure for system for extending the useful life of another system
US7437620B2 (en) * 2005-11-30 2008-10-14 International Business Machines Corporation Method and system for extending the useful life of another system
US7425847B2 (en) * 2006-02-03 2008-09-16 Micron Technology, Inc. Input buffer with optimal biasing and method thereof
KR101159045B1 (ko) 2006-05-04 2012-06-25 삼성전자주식회사 레귤레이티드 캐스코드 회로 및 이를 구비하는 증폭기
WO2015046025A1 (en) * 2013-09-26 2015-04-02 Semiconductor Energy Laboratory Co., Ltd. Switch circuit, semiconductor device, and system
KR102609662B1 (ko) * 2018-04-20 2023-12-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP7655742B2 (ja) * 2021-03-03 2025-04-02 キヤノン株式会社 比較器、光電変換装置、および機器

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4958133A (en) * 1989-11-13 1990-09-18 Intel Corporation CMOS complementary self-biased differential amplifier with rail-to-rail common-mode input-voltage range
JP3519499B2 (ja) * 1995-05-11 2004-04-12 株式会社ルネサステクノロジ 相補差動増幅器およびそれを備える半導体メモリ装置
US5815020A (en) * 1996-09-24 1998-09-29 Motorola, Inc. Balance differential receiver
DE19725286A1 (de) * 1997-06-14 1998-12-17 Philips Patentverwaltung Schaltungsanordnung mit einer Differenzverstärkerstufe
US6549971B1 (en) * 1999-08-26 2003-04-15 International Business Machines Corporation Cascaded differential receiver circuit

Also Published As

Publication number Publication date
JP2003249829A (ja) 2003-09-05
US20030160639A1 (en) 2003-08-28
US6806743B2 (en) 2004-10-19

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