JP3787644B2 - シリコンウエファ素子の処理条件の検出装置、モニター用素子及び検出方法 - Google Patents
シリコンウエファ素子の処理条件の検出装置、モニター用素子及び検出方法 Download PDFInfo
- Publication number
- JP3787644B2 JP3787644B2 JP20001094A JP20001094A JP3787644B2 JP 3787644 B2 JP3787644 B2 JP 3787644B2 JP 20001094 A JP20001094 A JP 20001094A JP 20001094 A JP20001094 A JP 20001094A JP 3787644 B2 JP3787644 B2 JP 3787644B2
- Authority
- JP
- Japan
- Prior art keywords
- silicon wafer
- manufacturing process
- temperature
- primary coil
- detecting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims description 53
- 229910052710 silicon Inorganic materials 0.000 title claims description 53
- 239000010703 silicon Substances 0.000 title claims description 53
- 238000012545 processing Methods 0.000 title claims description 17
- 238000001514 detection method Methods 0.000 title claims description 15
- 238000004519 manufacturing process Methods 0.000 claims description 22
- 238000012544 monitoring process Methods 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 11
- 230000008859 change Effects 0.000 claims description 7
- 239000004020 conductor Substances 0.000 claims description 7
- 235000012431 wafers Nutrition 0.000 description 44
- 238000000034 method Methods 0.000 description 12
- 238000005259 measurement Methods 0.000 description 10
- 239000000758 substrate Substances 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 4
- 238000012806 monitoring device Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 238000000691 measurement method Methods 0.000 description 2
- 230000005457 Black-body radiation Effects 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 230000003466 anti-cipated effect Effects 0.000 description 1
- 238000009529 body temperature measurement Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000003079 width control Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K1/00—Details of thermometers not specially adapted for particular types of thermometer
- G01K1/02—Means for indicating or recording specially adapted for thermometers
- G01K1/024—Means for indicating or recording specially adapted for thermometers for remote indication
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Measuring Instrument Details And Bridges, And Automatic Balancing Devices (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/123,664 US5466614A (en) | 1993-09-20 | 1993-09-20 | Structure and method for remotely measuring process data |
US08/123,664 | 1993-09-20 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH07106392A JPH07106392A (ja) | 1995-04-21 |
JP3787644B2 true JP3787644B2 (ja) | 2006-06-21 |
Family
ID=22410077
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP20001094A Expired - Lifetime JP3787644B2 (ja) | 1993-09-20 | 1994-08-25 | シリコンウエファ素子の処理条件の検出装置、モニター用素子及び検出方法 |
Country Status (4)
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5902044A (en) * | 1997-06-27 | 1999-05-11 | International Business Machines Corporation | Integrated hot spot detector for design, analysis, and control |
US6030877A (en) * | 1997-10-06 | 2000-02-29 | Industrial Technology Research Institute | Electroless gold plating method for forming inductor structures |
US6278379B1 (en) * | 1998-04-02 | 2001-08-21 | Georgia Tech Research Corporation | System, method, and sensors for sensing physical properties |
DE19910983A1 (de) * | 1999-03-12 | 2000-09-21 | Bosch Gmbh Robert | Vorrichtung und Verfahren zur Bestimmung der lateralen Unterätzung einer strukturierten Oberflächenschicht |
US6553277B1 (en) | 1999-05-07 | 2003-04-22 | Tokyo Electron Limited | Method and apparatus for vacuum treatment |
JP2001242014A (ja) * | 2000-02-29 | 2001-09-07 | Tokyo Electron Ltd | 基板の温度測定方法および処理方法 |
US20020045237A1 (en) * | 2000-03-29 | 2002-04-18 | Gouzel Karimova | Bacterial two-hybrid system for protein-protein interaction screening, new strains for use therein, and their applications |
CA2414724C (en) * | 2002-12-18 | 2011-02-22 | Cashcode Company Inc. | Induction sensor using printed circuit |
TWI268429B (en) * | 2003-11-29 | 2006-12-11 | Onwafer Technologies Inc | Systems, maintenance units and substrate processing systems for wirelessly charging and wirelessly communicating with sensor apparatus as well as methods for wirelessly charging and communicating with sensor apparatus |
KR100601956B1 (ko) * | 2004-06-28 | 2006-07-14 | 삼성전자주식회사 | 자기장의 변화를 이용한 온도측정장치 |
JP4859610B2 (ja) | 2006-09-29 | 2012-01-25 | 富士通セミコンダクター株式会社 | バッファ回路及びその制御方法 |
JP5049018B2 (ja) * | 2007-01-09 | 2012-10-17 | ソニーモバイルコミュニケーションズ株式会社 | 非接触充電装置 |
JP5478874B2 (ja) * | 2008-12-02 | 2014-04-23 | 株式会社フィルテック | 基板、基板保持装置、解析装置、プログラム、検出システム、半導体デバイス、表示装置、および半導体製造装置 |
US8226294B2 (en) * | 2009-08-31 | 2012-07-24 | Arizant Healthcare Inc. | Flexible deep tissue temperature measurement devices |
US8292502B2 (en) * | 2010-04-07 | 2012-10-23 | Arizant Healthcare Inc. | Constructions for zero-heat-flux, deep tissue temperature measurement devices |
US8292495B2 (en) | 2010-04-07 | 2012-10-23 | Arizant Healthcare Inc. | Zero-heat-flux, deep tissue temperature measurement devices with thermal sensor calibration |
US9354122B2 (en) | 2011-05-10 | 2016-05-31 | 3M Innovative Properties Company | Zero-heat-flux, deep tissue temperature measurement system |
AU2013388629A1 (en) * | 2013-05-03 | 2015-11-19 | 3M Innovative Properties Company | System for monitoring temperature of electrical conductor |
Family Cites Families (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2989691A (en) * | 1956-05-28 | 1961-06-20 | Gen Electric | Temperature measuring apparatus |
US3350760A (en) * | 1959-02-06 | 1967-11-07 | Texas Instruments Inc | Capacitor for miniature electronic circuits or the like |
US3234461A (en) * | 1960-12-05 | 1966-02-08 | Texas Instruments Inc | Resistivity-measuring device including solid inductive sensor |
US3338100A (en) * | 1963-06-12 | 1967-08-29 | Hitachi Ltd | Non-contact resonant thermometer |
US3320495A (en) * | 1963-07-02 | 1967-05-16 | Atomic Energy Commission | Surface-barrier diode for detecting high energy particles and method for preparing same |
US3391576A (en) * | 1965-03-13 | 1968-07-09 | Hitachi Ltd | Thermometric device for rotating structures |
US3544893A (en) * | 1968-08-05 | 1970-12-01 | Anatoly Ivanovich Savin | Apparatus for noncontact measurement of semiconductor resistivity including a toroidal inductive coil with a gap |
US3781506A (en) * | 1972-07-28 | 1973-12-25 | Gen Electric | Non-contacting temperature measurement of inductively heated utensil and other objects |
US4000458A (en) * | 1975-08-21 | 1976-12-28 | Bell Telephone Laboratories, Incorporated | Method for the noncontacting measurement of the electrical conductivity of a lamella |
JPS52111775A (en) * | 1976-03-17 | 1977-09-19 | Nippon Kokan Kk | Temperature measuring instrument and method of using same |
US4333225A (en) * | 1978-12-18 | 1982-06-08 | Xerox Corporation | Method of making a circular high voltage field effect transistor |
JPS5648145A (en) * | 1979-09-28 | 1981-05-01 | Hitachi Ltd | Measurement for sheet resistance of semiconductor layer |
DE3113557C2 (de) * | 1981-04-03 | 1984-04-26 | Siemens AG, 1000 Berlin und 8000 München | Elektrische Meßeinrichtung für die Läufertemperatur elektrischer Maschinen |
US4457794A (en) * | 1982-06-25 | 1984-07-03 | Matsushita Electric Industrial Co., Ltd. | Method for manufacturing optical memory disc |
GB8422360D0 (en) * | 1984-09-05 | 1984-10-10 | Kon I | Thermometers |
EP0261353A3 (de) * | 1986-09-24 | 1989-02-01 | Grapha-Holding Ag | Messeinrichtung |
JPH065691B2 (ja) * | 1987-09-26 | 1994-01-19 | 株式会社東芝 | 半導体素子の試験方法および試験装置 |
JPH0623935B2 (ja) * | 1988-02-09 | 1994-03-30 | 大日本スクリーン製造株式会社 | 再現性を高めた熱処理制御方法 |
EP0359922A1 (de) * | 1988-09-13 | 1990-03-28 | Landis & Gyr Betriebs AG | Vorrichtung zur Messung eines magnetischen Feldes |
NL8901079A (nl) * | 1989-04-28 | 1990-11-16 | Nedap Nv | Passieve elektronische opnemer. |
EP0406751A1 (de) * | 1989-07-07 | 1991-01-09 | Balzers Aktiengesellschaft | Verfahren und Anordnung zur Ermittlung von Messdaten während der Behandlung von Scheiben |
EP0452483A4 (en) * | 1989-11-09 | 1992-07-29 | The Johns Hopkins University | Inductive coupled high temperature monitor |
JPH07113664B2 (ja) * | 1990-02-26 | 1995-12-06 | シャープ株式会社 | 超電導磁界分布測定装置 |
US5119025A (en) * | 1990-07-26 | 1992-06-02 | Eastman Kodak Company | High-sensitivity magnetorresistive magnetometer having laminated flux collectors defining an open-loop flux-conducting path |
US5288649A (en) * | 1991-09-30 | 1994-02-22 | Texas Instruments Incorporated | Method for forming uncooled infrared detector |
US5370766A (en) * | 1993-08-16 | 1994-12-06 | California Micro Devices | Methods for fabrication of thin film inductors, inductor networks and integration with other passive and active devices |
US5439850A (en) * | 1993-09-08 | 1995-08-08 | North Carolina State University | Method for forming a layer of uniform thickness on a semiconductor wafer during rapid thermal processing |
-
1993
- 1993-09-20 US US08/123,664 patent/US5466614A/en not_active Expired - Lifetime
-
1994
- 1994-08-25 JP JP20001094A patent/JP3787644B2/ja not_active Expired - Lifetime
- 1994-09-15 DE DE69428086T patent/DE69428086T2/de not_active Expired - Fee Related
- 1994-09-15 EP EP94306773A patent/EP0644409B1/en not_active Expired - Lifetime
-
1995
- 1995-06-02 US US08/460,287 patent/US5576224A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
DE69428086D1 (de) | 2001-10-04 |
JPH07106392A (ja) | 1995-04-21 |
EP0644409A3 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1995-04-19 |
US5466614A (en) | 1995-11-14 |
EP0644409B1 (en) | 2001-08-29 |
US5576224A (en) | 1996-11-19 |
EP0644409A2 (en) | 1995-03-22 |
DE69428086T2 (de) | 2002-03-28 |
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