JP3786545B2 - Wiring board and its connection structure - Google Patents

Wiring board and its connection structure Download PDF

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Publication number
JP3786545B2
JP3786545B2 JP18582899A JP18582899A JP3786545B2 JP 3786545 B2 JP3786545 B2 JP 3786545B2 JP 18582899 A JP18582899 A JP 18582899A JP 18582899 A JP18582899 A JP 18582899A JP 3786545 B2 JP3786545 B2 JP 3786545B2
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Prior art keywords
wiring board
signal
conductor
ground layer
signal conductor
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JP18582899A
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JP2001015880A (en
Inventor
義信 澤
謙治 北澤
英博 南上
慎一 郡山
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Kyocera Corp
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Kyocera Corp
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Priority to JP18582899A priority Critical patent/JP3786545B2/en
Priority to US09/363,619 priority patent/US6483406B1/en
Priority to DE69933619T priority patent/DE69933619T2/en
Priority to EP99114940A priority patent/EP0977298B1/en
Publication of JP2001015880A publication Critical patent/JP2001015880A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19107—Disposition of discrete passive components off-chip wires

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  • Waveguide Connection Structure (AREA)
  • Printing Elements For Providing Electric Connections Between Printed Circuits (AREA)
  • Combinations Of Printed Boards (AREA)

Abstract

PROBLEM TO BE SOLVED: To enable a wiring board equipped with a microstrip line to be connected to another wiring board through a simple structure keeping signals low in transmission loss. SOLUTION: A wiring board is equipped with a microstrip line composed of a signal conductor 2 formed on the surface of a dielectric board 1 and a grounding layer 3 formed inside the dielectric board 1 in parallel with the signal conductor 2, where the end of the microstrip line is extended to the edge of the dielectric board 1, cutouts 4a and 4b are provided on each side of the signal conductor 2 at the edge of the board 1, two wiring boards where the inner grounding layers 3 inside the dielectric boards 1 are exposed through the cutouts 4a and 4b are arranged making their edges confront each other, and the signal conductors of the wiring boards and the grounding layers 3 which come out of the cutouts 4a and 4b are each electrically connected together with conductor members 10 such as wires, ribbons, TAB tapes or the like.

Description

【０００１】
【発明の属する技術分野】
本発明は、多層配線基板や高周波素子を収納するパッケージ等に適用され、信号導体とグランド層を有するマイクロストリップ線路を具備する配線基板と、その基板を他の配線基板に接続するための構造に関し、高周波信号の伝送損失を低減して他の配線基板に接続するための改良に関するものである。
【０００２】
【従来技術】
近年、高度情報化時代を迎え、情報伝達に用いられる電波は１〜３０ＧＨｚのマイクロ波領域から、更に３０〜３００ＧＨｚのミリ波領域の周波数まで活用することが検討されており、例えば、車間レーダーやオフィス内高速データ通信システム（無線ＬＡＮ）のようなミリ波の電波を用いたさまざまな応用システムも提案されるようになっている。
【０００３】
そのようなマイクロ波、ミリ波用のシステムにおいて用いられる配線基板４０としては、例えば、図６に示すように、誘電体基板４１表面に高周波用素子４２が搭載されており、さらに基板４１表面には、その高周波素子４２に信号を伝送するための信号線が設けられている。信号線としては、マイクロ波、ミリ波領域では、一般的な導体線では信号の伝送ができないために、通常、従来より、マイクロストリップ線路、ストリップ線路、コプレーナ線路、グランド付きコプレーナ線路などの高周波用線路が用いられている。
【０００４】
高周波用線路のうち、マイクロストリップ線路４３は、信号導体４４とグランド層４５とから構成され、信号導体４４は誘電体基板４１表面に形成され、グランド層４５は誘電体基板４１の裏面または内部に設けることができるが、配線基板の多層化、高密度配線化の要求に対して、グランド層４５は誘電体基板４１の内部に設けられる。
【０００５】
また、このようなマイクロストリップ線路を有する複数の配線基板４０、４０’間を接続してモジュール化する場合、各配線基板４０、４０’の終端部の信号導体４４、４４’の両側に、接続用グランド層４６、４６’を形成し、配線基板４０、４０’内部のグランド層４５、４５’とビアホール導体４７、４７’によって接続する。そして、信号導体４４、４４’と、および接続用グランド層４５、４５’とをそれぞれワイヤやリボンなどの導体線４８によって電気的に接続する。
【０００６】
【発明が解決しようとする課題】
しかしながら、グランド層４５，４５’が誘電体基板４１、４１’の内部に設けられた配線基板４０、４０’同士を接続する場合、図６に示したように、グランド層４５、４５’とをビアホール導体４７、４７’および接続用グランド層４６、４６’を用いて引き回して接続すると、この接続部における線路としての信号導体とグランド層との間隔が変動して電磁的な結合状態が変化するために、この接続部において信号の伝送の損失が大きくなり、しかも、電磁場分布の位相がずれてしまい信号が反射してしまうという問題があった。
【０００７】
従って、本発明は、誘電体基板表面に形成された信号導体と、誘電体基板内部に形成されたグランド層とからなるマイクロストリップ線路を具備する配線基板を他の配線基板に対して簡単な構造で且つ接続部における信号の伝送損失が小さい配線基板とその接続構造を提供することを目的とするものである。
【０００８】
【課題を解決するための手段】
本発明者等は、前記課題に対して検討を重ねた結果、誘電体基板縁部のマイクロストリップ線路における信号導体の両側に切り欠き部を設けて、その切り欠き面に誘電体基板内部に形成されているグランド層を露出せしめ、同様に切り欠き部の形成によって信号導体と切り欠き部に露出したグランド層を有する配線基板とを対峙させ、信号導体およびグランド層とを接続することにより、信号導体間およびグランド層間をそれぞれ略同一平面内にて接続することができる結果、配線基板間の接続部での信号の伝送損失を低減できるとともに、他の配線基板との接続構造を簡略化できることを見出した。
【０００９】
即ち、本発明の配線基板は、誘電体基板の表面に形成された信号導体と、該信号導体と平行に前記誘電体基板内部に形成されたグランド層とからなるマイクロストリップ線路を具備してなり、前記マイクロストリップ線路の終端部を前記誘電体基板の縁部に設けるとともに、前記終端部における前記信号導体の両側に前記グランド層が露出するように切り欠き部を設けた２つの配線基板の前記終端部同志を前記信号導体同士および前記グランド層同士が同一面になるように対峙させ、各配線基板の信号導体同士、および前記両側の切り欠き部に露出した一方側グランド層同士および他方側グランド層同士をそれぞれワイヤ、リボン、ＴＡＢ用テープのいずれかによって電気的に接続したことを特徴とするものであり、前記２つの配線基板のうち、少なくとも一方の基板表面には、高周波素子が搭載され、前記高周波素子と前記信号導体とを接続してもよく、さらには、前記信号導体の前記終端部両側の前記切り欠き部周囲に導体層を被着形成するとともに、該導体層と前記グランド層とを前記切り欠き部の壁面に形成された導体層を介して電気的に接続してもよい。
【００１０】
また、本発明の配線基板は、前記高周波素子は、前記配線基板の前記切り欠き部が設けられた表面と反対側の表面に搭載されてなり、前記高周波素子搭載面側に設けられた前記信号導体と前記グランド層とから成るマイクロストリップ線路と、前記切り欠き部が設けられた表面の前記信号線路と前記グランド層とから成るマイクロストリップ線路とはスルーホール導体によって電気的に接続されていることを特徴とするもの、または、前記高周波素子は、前記配線基板の前記切り欠き部が設けられた表面と反対側の表面に搭載されてなり、前記高周波素子搭載面側に設けられた前記信号導体と前記グランド層とから成るマイクロストリップ線路と、前記切り欠き部が設けられた表面の前記信号線路と前記グランド層とから成るマイクロストリップ線路とはスロットを介して電磁的に結合されていることを特徴とするものである。
【００１２】
【発明の実施の形態】
以下、本発明の接続構造を具体的に図面を用いて説明する。
まず、図１は、本発明の配線基板の基本構造を説明するための（ａ）概略斜視図、および（ｂ）Ｘ1 −Ｘ1 断面図である。
【００１３】
先ず、図１の配線基板Ａは、誘電体層１ａ、１ｂを積層して形成された誘電体基板１を有し、この誘電体基板１の表面には、信号導体２が被着形成されており、誘電体層１ａと誘電体層１ｂの間には、グランド層３が内蔵されている。そして、この信号導体２と、グランド層３によってマイクロストリップ線路が形成されており、その終端部が誘電体基板１の縁部まで延設されている。
【００１４】
かかる構造の配線基板Ａにおいては、誘電体層１ａの厚みを信号の周波数に応じて適宜厚さを調整することにより、信号導体２とグランド層３との間隔が調整され、良好な高周波伝送特性を有するマイクロストリップ線路を形成することができる。また、誘電体層１ｂの厚みの調整によって、配線基板Ａ全体としての厚みを任意に定めることができるために、配線基板Ａとしての強度を向上することもできる。
【００１５】
本発明においては、配線基板Ａの縁部において、信号導体２の両側の誘電体層１ａを切り欠くことにより、切り欠き部４ａ、４ｂが形成され、その切り欠き面にはグランド層３ａ，３ｂが露出されている。
【００１６】
図２は、本発明の図１の配線基板による他の電気回路との接続構造を説明するための（ａ）概略斜視図、（ｂ）Ｘ2 −Ｘ2 断面図である。本発明の接続構造によれば、図１と同様な接続部構造を有する２つの配線基板を対峙させて接続する。
【００１７】
即ち、図２によれば、図１の配線基板Ａに対峙して配置される配線基板Ｂは、誘電体層５ａと誘電体層５ｂとの積層体からなる誘電体基板５の誘電体層５ａ表面に信号導体６が被着形成されており、また、誘電体基板５の内部には、グランド層７が設けられている。また、配線基板Ｂの配線基板Ａと対峙する縁部には、切り欠き部８ａ、８ｂが設けられており、その切り欠き面にはグランド層９ａ，９ｂが露出している。
【００１８】
そして、配線基板Ａおよび配線基板Ｂの信号導体２と信号導体６、露出しているグランド層３ａとグランド層９ａ、グランド層３ｂとグランド層９ｂとはワイヤ、リボン、ＴＡＢ用テープのいずれかの導体部材１０によってそれぞれ電気的に接続されている。
【００１９】
かかる接続構造によって、配線基板Ａ，配線基板Ｂの信号導体２−６、グランド層３ａ−９ａ，３ｂ−９ｂは、いずれも同一平面内にて導体部材１０によって接続されるために、高周波信号による電磁界分布を乱すことがなく配線基板Ａと配線基板Ｂ間において良好な高周波伝送特性が得られる。なお、配線基板Ａと配線基板Ｂとの隙間は、できるだけ小さいほうが高周波特性を劣化させないために望ましい。
【００２０】
次に、本発明の配線基板とその接続構造の具体例として、高周波素子を搭載した複数のパッケージを相互接続した高周波用モジュールに応用した場合について図３の概略断面図をもとに説明する。
【００２１】
図３における高周波素子収納用パッケージＧ１によれば、誘電体層１１ａ，誘電体層１１ｂを積層してなる誘電体基板１１を具備し、その誘電体層１１ａと誘電体層１１ｂとの界面には、グランド層１２が設けられている。また、誘電体基板１１の中央部には凹部１３が設けられており、凹部１３内のグランド層１２の表面には、高周波素子１４が固着されている。
【００２２】
また、誘電体層１１ｂの表面には、信号導体１５が被着形成されており、誘電体基板１１内部のグランド層１２とともにマイクロストリップ線路を形成しており、信号導体１５は高周波素子１４とワイヤによって接続されている。
【００２３】
そして、誘電体基板１１の高周波素子１４搭載側は、高周波素子１４を気密に封止するためにロウ材や樹脂系接着材などによって金属製の基材１６に固着されている。
【００２４】
一方、誘電体基板１１の高周波素子１４搭載側とは反対の表面には、信号導体１７が設けられており、誘電体基板１１内部のグランド層１２とともにマイクロストリップ線路が形成されている。
【００２５】
そして、高周波素子１４搭載面側に設けられた信号導体１５とグランド層１２からなるマイクロストリップ線路と、高周波素子１４搭載面側の反対側に設けられた信号導体１７とグランド層１２からなるマイクロストリップ線路とは、信号導体１５と信号導体１７との縁部をスルーホール導体１８によって電気的に接続することにより信号の伝達を可能としている。
【００２６】
また、この高周波素子収納用パッケージＧ１によれば、信号導体１７のスルーホール導体１８との接続側と反対側のパッケージ縁部において、信号導体１７の両側に切り欠き部１９が形成されており、その切り欠き面にはグランド層１２が露出しており、接続部を形成している。
【００２７】
一方、パッケージＧ１と全く同様の接続部構造を有するパッケージＧ２を互いに接続部同士を対峙させて、信号導体１７同士、および切り欠き部１９の切り欠き面に露出しているグランド層１２同士をワイヤ、リボン、ＴＡＢ用テープのいずれかの導体部材２０によって電気的に接続することにより、各パッケージＧ１、Ｇ２の各マイクロストリップ線路間を高周波信号による電磁界分布を乱すことがなく良好な高周波信号の伝達が可能となる。
【００２８】
また、他の例としては、高周波素子を搭載したパッケージＧ３を所定の金属製ハウジングＨ内に収納した半導体装置の例について図４の概略断面図に基づいて説明する。図４における高周波素子収納用パッケージＧ３は、高周波素子収納用パッケージＧ１と同様に、誘電体層２１ａ、誘電体層２１ｂを積層してなる誘電体基板２１を具備し、誘電体層２１ａと誘電体層２１ｂとの界面には、グランド層２２が設けられている。また、誘電体基板２１の中央部には凹部２３が設けられており、凹部２３内のグランド層２２の表面には、高周波素子２４が固着され、信号導体２５とワイヤによって接続されている。
【００２９】
また、誘電体層２１ｂの表面には、高周波素子２４への信号入力用および出力用の２本の信号導体２５が被着形成されており、誘電体基板２１内部のグランド層２２とともにマイクロストリップ線路を形成している。一方、誘電体基板２１の高周波素子２４搭載側とは反対の表面には、入力用および出力用となる２本の信号導体２６がパッケージの縁部まで延設されており、誘電体基板２１内部のグランド層２２とともにマイクロストリップ線路が形成されている。そして、誘電体基板２１の高周波素子２４搭載側は、高周波素子２４を気密に封止するために金属製ハウジングＨにロウ材や樹脂系接着材などによって固着されている。
【００３０】
そして、高周波素子２４搭載面側に設けられた信号導体２５とグランド層２２からなるマイクロストリップ線路と、高周波素子２４搭載面側の反対側に設けられた信号導体２６とグランド層２２からなるマイクロストリップ線路とは、信号導体２５と信号導体２６との縁部をグランド層２２に設けられたスロット２７を介して対照的に対峙することにより、互いに電磁的に結合され信号の伝達を可能としている。
【００３１】
また、この高周波素子収納用パッケージＧ３によれば、２本の信号導体２６のスロット２７による電磁結合部と反対側のパッケージ縁部において、各信号導体２６の両側に切り欠き部２８が形成されており、その切り欠き面にはグランド層２２が露出しており、接続部を形成している。
【００３２】
一方、パッケージＧ３が収納される金属製ハウジングＨのパッケージＧ３の前記接続部と対峙する２つの部分には、誘電体基板２９が設けられており、その表面にはそれぞれ信号導体３０が被着形成されており、また金属製ハウジングＨは、電気的に接地されており、いわゆるグランド層を形成し、信号導体３０とともにマイクロストリップ線路を形成している。そして、誘電体基板２９の縁部において、信号導体３０の両側に切り欠き部３１が設けられ、金属製ハウジングＨの金属面が露出している。
【００３３】
そして、パッケージＧ３の信号導体２６とハウジングＨの信号導体３０、またパッケージＧ３の切り欠き部２８に露出しているグランド層２２と、ハウジングＨの切り欠き部３１に露出している金属面とをワイヤ、リボン、ＴＡＢ用テープのいずれかの導体部材３２によって電気的に接続することにより、パッケージＧ３とハウジングＨの各マイクロストリップ線路間を高周波信号による電磁界分布を乱すことがなく良好な高周波信号の伝達が可能となる。
【００３４】
また、本発明の配線基板およびその接続構造によれば、図１に示されるように配線基板の縁部における信号導体２の両側のグランド層３ａ、３ｂが信号導体２と同一面に形成されていないために、線路の特性評価のために、一般にコプレーナ線路からなるプローブを接続することが難しくなる。
【００３５】
そこで、図５の概略斜視図に示すように、信号導体２の終端部両側の切り欠き部４ａ、４ｂ周囲に導体層３２を被着形成し、また切り欠き部４ａ，４ｂの壁面にも導体層３３を形成し、導体層３２と、切り欠き部４に露出してなるグランド層３ａ、３ｂとを前記切り欠き部の壁面に形成された導体層３２を介して電気的に接続する。それによって、信号導体２と導体層３２にプローブ（図示せず）を押し当てることにより線路の伝送特性等を容易に評価することが可能となる。
【００３６】
本発明の配線基板の誘電体基板は、アルミナ、ムライト、ガラス、ガラスセラミックス、窒化アルミニウム（ＡｌＮ）、窒化珪素等の焼結体や、有機樹脂を構成要素として含有する有機質絶縁材によって構成される。また、グランド層、信号導体などは、高周波信号の伝送損失を小さくするためには、導体層材料としてＡｇ、Ｃｕ、Ａｕ等の低抵抗導体によって形成されていることが望ましく、そのために、誘電体基板を焼結体によって形成する場合には、焼成温度が８００〜１０００℃程度のガラス、ガラスセラミックス等の低温焼成の焼結体が最適であり、この組み合わせにより誘電体層と信号導体やグランド層とを同時焼成によって形成することも可能である。
【００３７】
また、本発明における配線基板は、例えば、ガラスセラミックスを構成する原料粉末に有機物系のバインダーを混合して調製した成形材料を、ドクターブレード法やプレス成形法、圧延法等の周知の成形方法でシート状の成形体を得た後、各シート状成形体に適宜打ち抜き加工して凹部やスルーホール等を形成し、次いでスルーホール内にＡｇ、Ｃｕ、Ａｕ等の低抵抗金属を主体とするペーストを用いてスルーホール導体や、信号導体、グランド層などの線路パターンを印刷形成する。
【００３８】
そして、複数のシート状成形体のうちグランド層の上側に位置するシート状成形体の信号導体の両側部分を切り欠いて積層して、切り欠き部にグランド層を露出させる。その後、この該積層体を８００〜１０００℃の温度で、窒素等の非酸化性雰囲気中で焼成することにより配線基板が得られる。
【００３９】
また、切り欠き部の形成は、焼成した配線基板から、グランド層の上側、または下側の誘電体層を研削加工してグランド層を露出させることも可能である。
【００４０】
かくして得られた配線基板の凹部内に高周波素子をＡｕ・Ｇｅ合金、Ａｕ・Ｓｎ合金等により凹部内の所定位置に接着固定した後、ワイヤボンディングやリボンなどにより信号導体と電気的に接続する。
【００４１】
【発明の効果】
以上詳述した通り、本発明の配線基板およびその接続構造は、信号導体とグランド層とからなるマイクロストリップ線路が形成された配線基板において、その縁部おいてグランド層が露出した切り欠き部を形成し、また同様に他の回路も同様な構造となし、信号導体間、グランド層間をそれぞれ略同一平面内にて接続することにより、接続部における信号導体とグランド層間の極端な間隙の変化を抑制することができるために、簡略化した構造からなり、接続部での伝送損失の小さい接続構造を提供できる。
【図面の簡単な説明】
【図１】本発明の配線基板の基本的な構造を説明するための（ａ）概略斜視図、（ｂ）Ｘ1 −Ｘ1 断面図である。
【図２】本発明の配線基板の基本的な接続構造を説明するための（ａ）概略斜視図、（ｂ）Ｘ2 −Ｘ2 断面図である。
【図３】本発明の配線基板とその接続構造の具体例として、高周波素子を搭載した複数のパッケージを相互接続した高周波用モジュールの概略断面図である。
【図４】本発明の配線基板とその接続構造の具体例として、高周波素子を搭載したパッケージＧ３を所定の金属製ハウジングＨ内に収納した半導体装置の概略断面図である。
【図５】本発明の配線基板における接続部の他の例を説明するための概略斜視図である。
【図６】従来のマイクロストリップ線路を有する配線基板の接続構造を説明するための（ａ）概略斜視図と（ｂ）Ｙ−Ｙ断面図である。
【符号の説明】
１ａ，１ｂ 誘電体層
Ａ 配線基板
２ 信号導体
３ａ，３ｂ，３ グランド層
４ａ，４ｂ，４ 切り欠き部[0001]
BACKGROUND OF THE INVENTION
The present invention is applied to a multilayer wiring board, a package for housing a high-frequency element, and the like, and relates to a wiring board having a microstrip line having a signal conductor and a ground layer, and a structure for connecting the board to another wiring board. The present invention relates to an improvement for reducing transmission loss of a high-frequency signal and connecting to another wiring board.
[0002]
[Prior art]
In recent years, with the advent of advanced information era, it has been studied to use radio waves used for information transmission from the microwave region of 1 to 30 GHz to the millimeter wave region of 30 to 300 GHz. Various application systems using millimeter-wave radio waves, such as an in-office high-speed data communication system (wireless LAN), have been proposed.
[0003]
As a wiring substrate 40 used in such a microwave and millimeter wave system, for example, as shown in FIG. 6, a high-frequency element 42 is mounted on the surface of a dielectric substrate 41, and further on the surface of the substrate 41. Is provided with a signal line for transmitting a signal to the high-frequency element 42. As signal lines, in the microwave and millimeter wave regions, signals cannot be transmitted by general conductor lines. Therefore, for conventional high frequency applications such as microstrip lines, strip lines, coplanar lines, and grounded coplanar lines. A track is used.
[0004]
Among the high-frequency lines, the microstrip line 43 includes a signal conductor 44 and a ground layer 45, the signal conductor 44 is formed on the surface of the dielectric substrate 41, and the ground layer 45 is formed on the back surface or inside of the dielectric substrate 41. Although it can be provided, the ground layer 45 is provided inside the dielectric substrate 41 in response to the demand for multilayer wiring boards and high-density wiring.
[0005]
Further, when a plurality of wiring boards 40, 40 'having such a microstrip line are connected to form a module, connection is made on both sides of the signal conductors 44, 44' at the end of each wiring board 40, 40 '. Ground layers 46, 46 'are formed and connected to the ground layers 45, 45' inside the wiring boards 40, 40 'by via-hole conductors 47, 47'. Then, the signal conductors 44 and 44 ′ and the connection ground layers 45 and 45 ′ are electrically connected by conductor wires 48 such as wires and ribbons.
[0006]
[Problems to be solved by the invention]
However, when the ground layers 45 and 45 ′ connect the wiring substrates 40 and 40 ′ provided inside the dielectric substrates 41 and 41 ′, as shown in FIG. When the connection is made by using the via-hole conductors 47 and 47 ′ and the connection ground layers 46 and 46 ′, the distance between the signal conductor as the line in the connection portion and the ground layer is changed to change the electromagnetic coupling state. For this reason, there is a problem in that loss of signal transmission becomes large at this connection portion, and the phase of the electromagnetic field distribution is shifted and the signal is reflected.
[0007]
Therefore, according to the present invention, a wiring board having a microstrip line composed of a signal conductor formed on the surface of a dielectric substrate and a ground layer formed inside the dielectric substrate has a simple structure with respect to other wiring substrates. In addition, it is an object of the present invention to provide a wiring board having a small signal transmission loss in a connection portion and a connection structure thereof.
[0008]
[Means for Solving the Problems]
As a result of studying the above problems, the present inventors have provided notches on both sides of the signal conductor in the microstrip line at the edge of the dielectric substrate, and formed the inside of the dielectric substrate on the notch surface. The signal ground is exposed by connecting the signal conductor and the ground layer to each other by exposing the ground layer exposed to the signal conductor and the wiring board having the ground layer exposed to the notch by forming the notch. As a result of being able to connect between conductors and between ground layers in substantially the same plane, it is possible to reduce the signal transmission loss at the connection part between the wiring boards and to simplify the connection structure with other wiring boards. I found it.
[0009]
That is, the wiring board of the present invention comprises a microstrip line comprising a signal conductor formed on the surface of a dielectric substrate and a ground layer formed inside the dielectric substrate in parallel with the signal conductor. The wiring board having two end portions provided with an end portion of the microstrip line at an edge portion of the dielectric substrate and a notch portion so that the ground layer is exposed on both sides of the signal conductor at the end portion. The end conductors face each other so that the signal conductors and the ground layers are flush with each other, and the signal conductors of each wiring board and the one-side ground layers and the other-side ground exposed at the notches on both sides The layers are electrically connected to each other by one of a wire, a ribbon, and a TAB tape. The high-frequency element is mounted on at least one substrate surface, and the high-frequency element and the signal conductor may be connected. Further, a conductor layer is provided around the notch on both sides of the terminal end of the signal conductor. The conductor layer and the ground layer may be electrically connected via a conductor layer formed on the wall surface of the notch.
[0010]
In the wiring board of the present invention, the high-frequency element is mounted on the surface of the wiring board opposite to the surface on which the notch portion is provided, and the signal provided on the high-frequency element mounting surface side. A microstrip line composed of a conductor and the ground layer, and the microstrip line composed of the signal line on the surface provided with the notch and the ground layer are electrically connected by a through-hole conductor. Or the high-frequency element mounted on the surface of the wiring board opposite to the surface provided with the notch, and the signal conductor provided on the high-frequency element mounting surface side. And a microstrip line composed of the ground layer, a microstrip line composed of the signal line on the surface provided with the notch and the ground layer. The flop line is characterized in that it is electromagnetically coupled through the slot.
[0012]
DETAILED DESCRIPTION OF THE INVENTION
The connection structure of the present invention will be specifically described below with reference to the drawings.
First, FIG. 1A is a schematic perspective view for explaining the basic structure of a wiring board of the present invention, and FIG. 1B is a sectional view taken along line X 1 -X 1 .
[0013]
First, the wiring board A of FIG. 1 has a dielectric substrate 1 formed by laminating dielectric layers 1a and 1b, and a signal conductor 2 is deposited on the surface of the dielectric substrate 1. A ground layer 3 is built between the dielectric layer 1a and the dielectric layer 1b. A microstrip line is formed by the signal conductor 2 and the ground layer 3, and a terminal portion thereof extends to the edge of the dielectric substrate 1.
[0014]
In the wiring board A having such a structure, the distance between the signal conductor 2 and the ground layer 3 is adjusted by appropriately adjusting the thickness of the dielectric layer 1a in accordance with the frequency of the signal, and good high-frequency transmission characteristics. Can be formed. Further, since the thickness of the entire wiring board A can be arbitrarily determined by adjusting the thickness of the dielectric layer 1b, the strength as the wiring board A can be improved.
[0015]
In the present invention, the notched portions 4a and 4b are formed by notching the dielectric layers 1a on both sides of the signal conductor 2 at the edge of the wiring board A, and the ground layers 3a and 3b are formed on the notched surfaces. Is exposed.
[0016]
2A is a schematic perspective view, and FIG. 2B is a cross-sectional view taken along line X 2 -X 2 , for explaining a connection structure with another electric circuit using the wiring board of FIG. 1 according to the present invention. According to the connection structure of the present invention, two wiring boards having a connection structure similar to that in FIG. 1 are connected to face each other.
[0017]
That is, according to FIG. 2, the wiring board B arranged opposite to the wiring board A of FIG. 1 is the dielectric layer 5a of the dielectric substrate 5 made of a laminate of the dielectric layer 5a and the dielectric layer 5b. A signal conductor 6 is deposited on the surface, and a ground layer 7 is provided inside the dielectric substrate 5. Further, notches 8a and 8b are provided at the edges of the wiring board B facing the wiring board A, and the ground layers 9a and 9b are exposed at the notches.
[0018]
The signal conductor 2 and the signal conductor 6 of the wiring board A and the wiring board B, the exposed ground layer 3a and the ground layer 9a, and the ground layer 3b and the ground layer 9b are either a wire, a ribbon, or a TAB tape. The conductor members 10 are electrically connected to each other.
[0019]
With such a connection structure, the signal conductor 2-6 and the ground layers 3a-9a and 3b-9b of the wiring board A and the wiring board B are all connected by the conductor member 10 in the same plane, and therefore, by the high-frequency signal. Good high frequency transmission characteristics can be obtained between the wiring board A and the wiring board B without disturbing the electromagnetic field distribution. Note that the gap between the wiring board A and the wiring board B is preferably as small as possible in order not to deteriorate the high frequency characteristics.
[0020]
Next, as a specific example of the wiring board of the present invention and its connection structure, a case where it is applied to a high frequency module in which a plurality of packages mounted with high frequency elements are interconnected will be described with reference to the schematic sectional view of FIG.
[0021]
3 includes a dielectric substrate 11 formed by laminating a dielectric layer 11a and a dielectric layer 11b, and an interface between the dielectric layer 11a and the dielectric layer 11b is provided. A ground layer 12 is provided. A recess 13 is provided in the center of the dielectric substrate 11, and a high frequency element 14 is fixed to the surface of the ground layer 12 in the recess 13.
[0022]
A signal conductor 15 is deposited on the surface of the dielectric layer 11b, and a microstrip line is formed together with the ground layer 12 inside the dielectric substrate 11. The signal conductor 15 is connected to the high-frequency element 14 and a wire. Connected by.
[0023]
The high-frequency element 14 mounting side of the dielectric substrate 11 is fixed to a metal base 16 with a brazing material, a resin adhesive or the like in order to hermetically seal the high-frequency element 14.
[0024]
On the other hand, a signal conductor 17 is provided on the surface of the dielectric substrate 11 opposite to the high frequency element 14 mounting side, and a microstrip line is formed together with the ground layer 12 inside the dielectric substrate 11.
[0025]
Then, a microstrip line composed of the signal conductor 15 and the ground layer 12 provided on the high-frequency element 14 mounting surface side, and a microstrip composed of the signal conductor 17 and the ground layer 12 provided on the opposite side of the high-frequency element 14 mounting surface side. The line enables signal transmission by electrically connecting the edge portions of the signal conductor 15 and the signal conductor 17 by the through-hole conductor 18.
[0026]
Further, according to the high-frequency element storage package G1, the notch 19 is formed on both sides of the signal conductor 17 at the package edge opposite to the connection side of the signal conductor 17 to the through-hole conductor 18. The ground layer 12 is exposed on the cut surface, and a connection portion is formed.
[0027]
On the other hand, the package G2 having the same connection structure as that of the package G1 is connected to each other so that the signal conductors 17 and the ground layers 12 exposed on the notch surface of the notch 19 are wired. By electrically connecting with any one of the conductor members 20 of the ribbon and the tape for TAB, a good high-frequency signal can be generated without disturbing the electromagnetic field distribution due to the high-frequency signal between the microstrip lines of the packages G1 and G2. Communication is possible.
[0028]
As another example, an example of a semiconductor device in which a package G3 on which a high-frequency element is mounted is housed in a predetermined metal housing H will be described with reference to the schematic cross-sectional view of FIG. The high frequency element storage package G3 in FIG. 4 includes a dielectric substrate 21 formed by laminating a dielectric layer 21a and a dielectric layer 21b, similar to the high frequency element storage package G1, and the dielectric layer 21a and the dielectric A ground layer 22 is provided at the interface with the layer 21b. A recess 23 is provided in the center of the dielectric substrate 21, and a high frequency element 24 is fixed to the surface of the ground layer 22 in the recess 23 and connected to the signal conductor 25 by a wire.
[0029]
Further, two signal conductors 25 for signal input to and output from the high-frequency element 24 are formed on the surface of the dielectric layer 21b, and together with the ground layer 22 inside the dielectric substrate 21, a microstrip line is formed. Is forming. On the other hand, two signal conductors 26 for input and output are extended to the edge of the package on the surface of the dielectric substrate 21 opposite to the side on which the high frequency element 24 is mounted. A microstrip line is formed together with the ground layer 22. The high frequency element 24 mounting side of the dielectric substrate 21 is fixed to the metal housing H with a brazing material, a resin adhesive, or the like in order to hermetically seal the high frequency element 24.
[0030]
Then, a microstrip line composed of the signal conductor 25 and the ground layer 22 provided on the high-frequency element 24 mounting surface side, and a microstrip composed of the signal conductor 26 and the ground layer 22 provided on the opposite side of the high-frequency element 24 mounting surface side. The lines are opposed to each other through the slots 27 provided in the ground layer 22 so that the edges of the signal conductors 25 and 26 are opposed to each other, thereby being electromagnetically coupled to each other to enable signal transmission.
[0031]
Further, according to the high-frequency element storage package G3, notches 28 are formed on both sides of each signal conductor 26 at the package edge opposite to the electromagnetic coupling portion by the slots 27 of the two signal conductors 26. The ground layer 22 is exposed at the notch surface, and a connection portion is formed.
[0032]
On the other hand, a dielectric substrate 29 is provided on two portions of the metal housing H that accommodates the package G3 that face the connection portion of the package G3, and the signal conductors 30 are formed on the surfaces thereof, respectively. In addition, the metal housing H is electrically grounded, forms a so-called ground layer, and forms a microstrip line together with the signal conductor 30. Then, at the edge of the dielectric substrate 29, notches 31 are provided on both sides of the signal conductor 30, and the metal surface of the metal housing H is exposed.
[0033]
Then, the signal conductor 26 of the package G3, the signal conductor 30 of the housing H, the ground layer 22 exposed at the notch 28 of the package G3, and the metal surface exposed at the notch 31 of the housing H A good high frequency signal without disturbing the electromagnetic field distribution due to the high frequency signal between the package G3 and each microstrip line of the housing H by being electrically connected by any one of the conductor members 32 of a wire, ribbon, or TAB tape. Can be transmitted.
[0034]
Further, according to the wiring board and the connection structure thereof of the present invention, the ground layers 3a and 3b on both sides of the signal conductor 2 at the edge of the wiring board are formed on the same surface as the signal conductor 2 as shown in FIG. For this reason, it is generally difficult to connect a probe composed of a coplanar line for the characteristic evaluation of the line.
[0035]
Therefore, as shown in the schematic perspective view of FIG. 5, a conductor layer 32 is formed around the notches 4a and 4b on both sides of the terminal portion of the signal conductor 2, and the conductors are also formed on the wall surfaces of the notches 4a and 4b. A layer 33 is formed, and the conductor layer 32 and the ground layers 3a and 3b exposed at the notch 4 are electrically connected via the conductor layer 32 formed on the wall surface of the notch. Accordingly, it is possible to easily evaluate the transmission characteristics of the line by pressing a probe (not shown) against the signal conductor 2 and the conductor layer 32.
[0036]
The dielectric substrate of the wiring substrate of the present invention is composed of a sintered body such as alumina, mullite, glass, glass ceramics, aluminum nitride (AlN), silicon nitride, or an organic insulating material containing an organic resin as a constituent element. . Further, in order to reduce the transmission loss of the high-frequency signal, the ground layer, the signal conductor, etc. are preferably formed of a low resistance conductor such as Ag, Cu, Au or the like as the conductor layer material. When the substrate is formed of a sintered body, a low-temperature fired sintered body such as glass or glass ceramic having a firing temperature of about 800 to 1000 ° C. is optimal, and this combination allows a dielectric layer, a signal conductor, and a ground layer. It is also possible to form by simultaneous firing.
[0037]
In addition, the wiring board in the present invention is prepared by mixing a molding material prepared by mixing an organic binder with a raw material powder constituting glass ceramics by a known molding method such as a doctor blade method, a press molding method, a rolling method, or the like. After obtaining a sheet-like molded body, each sheet-like molded body is appropriately punched to form recesses, through holes, etc., and then a paste mainly composed of a low resistance metal such as Ag, Cu, Au, etc. in the through holes Is used to print and form line patterns such as through-hole conductors, signal conductors, and ground layers.
[0038]
Then, both side portions of the signal conductor of the sheet-like molded body located above the ground layer among the plurality of sheet-like molded bodies are cut out and stacked, and the ground layer is exposed at the cut-out portions. Thereafter, the laminate is baked at a temperature of 800 to 1000 ° C. in a non-oxidizing atmosphere such as nitrogen to obtain a wiring board.
[0039]
Further, the notch can be formed by grinding the dielectric layer on the upper side or the lower side of the ground layer from the fired wiring board to expose the ground layer.
[0040]
The high-frequency element is bonded and fixed at a predetermined position in the recess by Au / Ge alloy, Au / Sn alloy or the like in the recess of the wiring board thus obtained, and then electrically connected to the signal conductor by wire bonding or ribbon.
[0041]
【The invention's effect】
As described above in detail, the wiring board and the connection structure thereof according to the present invention have a notch portion where the ground layer is exposed at the edge of the wiring board on which the microstrip line composed of the signal conductor and the ground layer is formed. Similarly, other circuits have the same structure, and the signal conductors and the ground layers are connected in substantially the same plane, thereby changing the extreme gap between the signal conductors and the ground layers in the connection portion. Since it can be suppressed, it is possible to provide a connection structure having a simplified structure and having a small transmission loss at the connection portion.
[Brief description of the drawings]
[1] (a) a schematic perspective view for explaining a basic structure of a wiring board of the present invention, a (b) X 1 -X 1 cross section.
2 (a) schematic perspective view for explaining the basic connection structure of the wiring board of the present invention, a (b) X 2 -X 2 sectional view.
FIG. 3 is a schematic cross-sectional view of a high-frequency module in which a plurality of packages mounted with high-frequency elements are interconnected as a specific example of the wiring board of the present invention and its connection structure.
FIG. 4 is a schematic cross-sectional view of a semiconductor device in which a package G3 on which a high-frequency element is mounted is housed in a predetermined metal housing H as a specific example of the wiring board and the connection structure thereof according to the present invention.
FIG. 5 is a schematic perspective view for explaining another example of the connecting portion in the wiring board of the present invention.
6A is a schematic perspective view and FIG. 6B is a YY sectional view for explaining a connection structure of a wiring board having a conventional microstrip line.
[Explanation of symbols]
1a, 1b Dielectric layer A Wiring board 2 Signal conductors 3a, 3b, 3 Ground layers 4a, 4b, 4 Notch

Claims (5)

誘電体基板の表面に形成された信号導体と、該信号導体と平行に前記誘電体基板内部に形成されたグランド層とからなるマイクロストリップ線路を具備してなり、前記マイクロストリップ線路の終端部を前記誘電体基板の縁部に設けるとともに、前記終端部における前記信号導体の両側に前記グランド層が露出するように切り欠き部を設けた２つの配線基板の前記終端部同士を前記信号導体同士および前記グランド層同士が同一面になるように対峙させ、各配線基板の信号導体同士、および前記両側の切り欠き部に露出した一方側グランド層同士および他方側グランド層同士をそれぞれワイヤ、リボン、ＴＡＢ用テープのいずれかによって電気的に接続したことを特徴とする配線基板。A microstrip line comprising a signal conductor formed on the surface of the dielectric substrate and a ground layer formed in the dielectric substrate in parallel with the signal conductor; wherein it is provided on the edge of the dielectric substrate, the signal conductor 2 of the said end portions of the wiring board signal conductor the ground layer on both sides is provided with a cutout portion to expose between the said terminal portion and the ground layer with each other is opposed to be in the same plane, the signal conductors same Judges of each wiring board, and the opposite sides of the notch on one side ground layer exposed in portions and the other side ground layers What happened each wire, ribbon A wiring board that is electrically connected by any one of TAB tapes . 前記２つの配線基板のうち、少なくとも一方の基板表面に高周波素子が搭載されてなり、該基板に設けられた信号導体と接続してなることを特徴とする請求項１記載の配線基板。 2. The wiring board according to claim 1, wherein a high-frequency element is mounted on at least one of the two wiring boards and is connected to a signal conductor provided on the board . 前記信号導体の前記終端部両側の前記切り欠き部周囲に導体層を被着形成するとともに、該導体層と前記グランド層とを前記切り欠き部の壁面に形成された導体層を介して電気的に接続してなることを特徴とする請求項１記載の配線基板。  A conductor layer is deposited around the notch on both sides of the terminal end of the signal conductor, and the conductor layer and the ground layer are electrically connected via a conductor layer formed on the wall surface of the notch. The wiring board according to claim 1, wherein the wiring board is connected to the wiring board. 前記高周波素子は、前記配線基板の前記切り欠き部が設けられた表面と反対側の表面に搭載されてなり、前記高周波素子搭載面側に設けられた前記信号導体と前記グランド層とから成るマイクロストリップ線路と、前記切り欠き部が設けられた表面の前記信号線路と前記グランド層とから成るマイクロストリップ線路とはスルーホール導体によって電気的に接続されていることを特徴とする請求項３記載の配線基板。The high-frequency element is mounted on the surface of the wiring board opposite to the surface on which the cutout portion is provided, and is a microscopic circuit comprising the signal conductor provided on the high-frequency element mounting surface side and the ground layer. The strip line and the microstrip line composed of the signal line on the surface provided with the notch and the ground layer are electrically connected by a through-hole conductor. Wiring board. 前記高周波素子は、前記配線基板の前記切り欠き部が設けられた表面と反対側の表面に搭載されてなり、前記高周波素子搭載面側に設けられた前記信号導体と前記グランド層とから成るマイクロストリップ線路と、前記切り欠き部が設けられた表面の前記信号線路と前記グランド層とから成るマイクロストリップ線路とはスロットを介して電磁的に結合されていることを特徴とする請求項３記載の配線基板。The high-frequency element is mounted on the surface of the wiring board opposite to the surface on which the cutout portion is provided, and is a microscopic circuit comprising the signal conductor provided on the high-frequency element mounting surface side and the ground layer. 4. The strip line and the microstrip line comprising the signal line on the surface provided with the notch and the ground layer are electromagnetically coupled through a slot. Wiring board.
JP18582899A 1998-07-31 1999-06-30 Wiring board and its connection structure Expired - Fee Related JP3786545B2 (en)

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JP18582899A JP3786545B2 (en) 1999-06-30 1999-06-30 Wiring board and its connection structure
US09/363,619 US6483406B1 (en) 1998-07-31 1999-07-29 High-frequency module using slot coupling
DE69933619T DE69933619T2 (en) 1998-07-31 1999-07-30 RF module
EP99114940A EP0977298B1 (en) 1998-07-31 1999-07-30 High-frequency module

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KR100460674B1 (en) * 2002-03-15 2004-12-09 주식회사 맥퀸트전자 Tilted surface interconnection type printed circuit board
JP3935833B2 (en) * 2002-11-28 2007-06-27 京セラ株式会社 Electronic equipment
US7018219B2 (en) * 2004-02-25 2006-03-28 Rosenau Steven A Interconnect structure and method for connecting buried signal lines to electrical devices
KR100586278B1 (en) 2004-12-07 2006-06-08 삼성전자주식회사 Printed circuit board with bonding wire shield structure for high speed semiconductor package
DE202007012719U1 (en) 2007-09-11 2007-11-22 Rosenberger Hochfrequenztechnik Gmbh & Co. Kg Multiple micro-HF-contact arrangement
JP2012089935A (en) * 2010-10-15 2012-05-10 Nec Engineering Ltd High frequency module connection structure
JP2013187344A (en) * 2012-03-08 2013-09-19 Hitachi Ltd Semiconductor device and manufacturing method of the same
JP2015204547A (en) * 2014-04-15 2015-11-16 日本電信電話株式会社 Connection structure of high frequency component
JP6441697B2 (en) * 2015-01-29 2018-12-19 京セラ株式会社 Wiring board and electronic device
KR102576089B1 (en) 2018-09-21 2023-09-08 삼성전자주식회사 printed circuit board assembly
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