JP3730473B2 - High frequency semiconductor devices - Google Patents

High frequency semiconductor devices Download PDF

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JP3730473B2
JP3730473B2 JP2000088072A JP2000088072A JP3730473B2 JP 3730473 B2 JP3730473 B2 JP 3730473B2 JP 2000088072 A JP2000088072 A JP 2000088072A JP 2000088072 A JP2000088072 A JP 2000088072A JP 3730473 B2 JP3730473 B2 JP 3730473B2
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Prior art keywords
frequency
frequency signal
semiconductor device
output
terminal
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JP2001274337A (en
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明男 太田
泰則 河村
正勇 藤原
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Rohm Co Ltd
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Rohm Co Ltd
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Description

【０００１】
【発明の属する技術分野】
本発明は、高周波信号発生手段を備える高周波用半導体装置に関し、特にその高周波出力信号を測定出来るようにした高周波用半導体装置に関する。
【０００２】
【従来の技術】
ＰＬＬ回路などの高周波信号を発生する高周波信号発生手段を有し、その発生された高周波信号を外部へ出力する半導体装置においては、規定の高周波信号が出力されているかどうかを測定する必要がある。
【０００３】
図５は、従来の高周波信号を出力する高周波用半導体装置の測定方法を概略的に説明する図である。図５において、高周波用半導体装置５１には高周波信号発生手段としてＰＬＬ回路５２が内蔵されており、高周波信号が外部端子５３から出力されるように構成されている。この半導体装置５１の高周波出力信号の測定は、外部端子５３に、測定ケーブル５５を介して測定器５４を接続して、行われている。
【０００４】
【発明が解決しようとする課題】
従来の測定方法では、出力される高周波信号の周波数が比較的低い場合にはさしたる問題もなく、測定することが出来てきた。しかし、出力される高周波信号の周波数が１００ＭＨｚを越えるような高い周波数となってくると、測定器５４までの測定ケーブル５５において信号が減衰したり、信号の高調波成分が失われることにより波形品質が低下したりしてしまう。また、図示していないけれども、半導体装置５１の外部端子５３に測定ケーブル５５を接続するためには、半導体装置５１をＩＣソケットに収納し、これを測定用治具基板に装着し、この測定用治具基板に設けられている外部接続用コネクタを介することになる。
【０００５】
このような測定上の問題により、高周波用半導体装置５１からから出力されてくる高周波信号を測定器に正確に伝達することが出来ないため、正しく高周波信号を測定することが困難になってきている。
【０００６】
また、何らかの工夫によって、高周波信号が良い品質で測定器に伝達できたとしても、高周波信号の周波数が高くなるにつれて、測定器の能力をその周波数の測定が可能な周波数帯域を持ったものに更新しなければならず、測定器側の問題もある。
【０００７】
そこで、本発明は、従来と同様の簡易な測定器を使用しながら、より高い周波数の信号を測定することができるようにした、高周波用半導体装置を提供することを目的とする。
【０００８】
【課題を解決するための手段】
請求項１の高周波用半導体装置は、高周波信号を発生する高周波信号発生手段と、入力される信号を所定の比で分周して出力する分周手段と、この高周波信号発生手段で発生された高周波信号を外部に導出するための第１外部端子である高周波信号出力端子と、前記分周手段の入力に接続され、且つ前記高周波信号出力端子と外部で接続可能に設けられた第２外部端子と、前記分周手段の出力に接続され測定用端子となる第３外部端子とを有し、
前記高周波信号出力端子と前記第２外部端子とを外部で相互接続し、前記分周手段の出力に接続された前記第３外部端子で前記高周波信号発生手段からの出力を測定することを特徴とする。
【０００９】
本発明の請求項１の高周波用半導体装置によれば、半導体装置内に分周回路を設け、ＰＬＬ回路などの高周波発生手段から出力された高周波信号をこの分周回路を通すことにより比較的低い周波数信号に変換して、測定するようにしている。そして、この分周回路の入力には本半導体装置の外部端子から一度出力された信号を別の外部端子を介して再び取り込んだ高周波信号を用いる。
【００１０】
これにより、高周波信号が半導体装置から確実に出力されていることが確認できる。
【００１１】
また、この分周回路を用いることで、比較的低い信号で測定することができるから、測定回路における波形品質の低下を防ぐことができると同時に、簡易な測定器を用いて高周波信号を問題なく測定できる。
【００１２】
【発明の実施の形態】
図１は、本発明の高周波用半導体装置の実施の形態を示す図であり、図２は、参考として示す好ましくない構成の高周波用半導体装置を示すものである。
【００１３】
図１において、高周波用半導体装置１１には、高周波信号発生手段として例えば１００ＭＨｚの周波数信号を出力するＰＬＬ回路１２が内蔵されている。ＰＬＬ回路１２の高周波出力信号は、接続線１４ａにより第１外部端子である高周波信号出力端子１４に導出される。
【００１４】
また、高周波用半導体装置１１には分周回路１３が内蔵されている。この分周回路１３は、入力された信号の周波数を、分周比Ｎに従ってＮ分の１に分周して出力するものであり、その入力は接続線１５ａを介して第２外部端子である分周回路入力端子１５から供給される。この分周比Ｎとしては、例えばＮ＝４、１０など適宜決定される。そして、その出力は、接続線１６ａを介して、第３外部端子である分周回路出力端子１６に導出される。
【００１５】
このように構成される高周波用半導体装置１１の高周波信号を測定するには、図１に示されるように、高周波信号出力端子１４と分周回路入力端子１５とを高周波用半導体装置１１の外部で、外部接続線１７を用いてショートする。これにより分周回路１３にはＰＬＬ回路１２で発生された高周波信号が高周波信号出力端子１４，外部接続線１７，分周回路入力端子１５を経由して入力される。この入力された高周波信号が分周比Ｎにしたがって、比較的低い周波数に分周され、分周回路出力端子１６に導出される。
【００１６】
そして、測定器を分周回路出力端子１６に接続して、比較的低い周波数に分周された高周波信号を測定する。なお、分周回路１３は測定専用に設けられるものであるが、必要に応じて他の用途に利用することもできる。
【００１７】
この分周回路１３は、ＰＬＬ回路１２と同じ半導体装置、即ち同一チップに内蔵されているから、それらの間の距離は短くかつ配線上の問題もないので、高周波信号の波形品質の低下などの問題はない。したがって、この測定器としては、分周回路出力端子１６に導出される比較的低い周波数を測定できる性能のものでよく、また導出される信号の波形品質も前述のように良好に保たれているから、高周波信号出力端子１４に導出されている本来の高周波信号を直接測定するのと同様に、正確に測定することができる。
【００１８】
さらに、高周波信号出力端子１４と分周回路入力端子１５とが、高周波用半導体装置１１の外部で外部接続線１７によりショートされている。これは、測定すべき高周波信号を高周波用半導体装置１１の高周波信号出力端子１４により一旦外部に出力させ、この高周波信号を再度高周波用半導体装置１１の内部に導入して測定することで、高周波用半導体装置１１、特に高周波信号発生手段であるＰＬＬ回路１２が正しく動作していることを確認している。
【００１９】
この点について図２を参照して、高周波半導体装置の好ましくない構成例について説明する。図２は高周波半導体装置１１´であり、本発明の実施の形態である図１と対応する構成要素には同一の符号を付しており、簡単のために再度の説明は省略する。
【００２０】
この図２では、ＰＬＬ回路１２の高周波信号出力を接続線１２ｂにより直接分周回路１３に入力している。そして、その接続線１２ｂのいずれかの箇所から接続線１８ａを介して、外部端子である高周波出力端子１８に導出している。
【００２１】
この図２の構成によっても、分周回路出力端子１６において、高周波信号を分周回路１３で分周した比較的低い周波数の信号を測定することはできる。しかし、ＰＬＬ回路１２の高周波信号出力を接続線１２ｂと接続線１８ａとにより途中で分岐して、一方は分周回路１３に他方は高周波出力端子１８に供給しているから、分周回路出力端子１６で測定できていたとしても、例えば接続線１８ａの×印の点で不具合がある場合のように、本来の高周波出力端子１８から所定の高周波信号が出力されていることの確認を取ることができない。このような理由から、図２に示されるような構成とすることは、好ましくない。
【００２２】
さて、図３及び図４は、本発明の高周波用半導体装置１１の測定状況を説明する図である。これらの図において、図１の高周波用半導体装置１１におけると同様な構成には同一符号を付している。
【００２３】
図３において、２１は測定用治具を概念的に示すもので、内部にスイッチ２２を有している。このスイッチ２２は、高周波信号出力端子１４と分周回路入力端子１５との間に接続されている。測定に際して、高周波用半導体装置１１をこの測定用治具２１に結合し、スイッチ２２を閉成して、分周回路出力端子１６に導出される周波数が分周された高周波信号を測定する。尚、スイッチ２３と抵抗２４が接続線１５ａに接続されている。これのスイッチ２３は、測定中は開放されており、高周波用半導体装置１１の使用中は閉成されて分周回路１３の入力端を電源電圧、接地点などの一定電位に固定する。高周波信号の測定が終了すると、高周波用半導体装置１１は測定用治具２１から外される。
【００２４】
図４において、３１は他の測定用治具を概念的に示すもので、内部に切り替えスイッチ３２，３３を有している。測定に際して、高周波用半導体装置１１をこの測定用治具２１に結合し、切り替えスイッチ３２，３３を図示の状態に切り替えて、高周波信号出力端子１４と分周回路入力端子１５の間をショートし、この状態で分周回路出力端子１６に導出される、周波数が分周された高周波信号を測定する。
【００２５】
切り替えスイッチ３２，３３を図示の状態と逆の状態に切り替えると、高周波信号出力端子１４が測定用治具の出力端子３４に接続され、この出力端子３４から高周波信号が出力される。また、分周回路入力端子１５が測定用治具３１の内部で接地点に接続され、分周回路１３の入力端が接地電位に固定される。
【００２６】
したがって、分周回路出力端子１６に導出される周波数が分周された高周波信号を測定するように測定用治具３１を取り付けた状態でも、通常の使用状態と同様の状態で使用することができる。もちろん、実使用時には、高周波用半導体装置１１は、測定用治具３１から外して使用する。この場合には別途、分周回路入力端子１５を固定電位点に接続することが望ましい。
【００２７】
【発明の効果】
本発明の請求項１の高周波用半導体装置によれば、半導体装置内に分周回路を設け、ＰＬＬ回路などの高周波信号発生手段から出力された高周波信号をこの分周回路を通すことにより比較的低い周波数信号に変換して、測定する。そして、この分周回路の入力には本半導体装置の外部端子から一度出力された信号を別の外部端子を介して再び取り込んだ高周波信号を用いる。
【００２８】
これにより、高周波信号が半導体装置から確実に出力されていることが確認できる。
【００２９】
また、この分周回路を用いることで、比較的低い周波数で測定することができるから、測定回路における波形品質の低下を防ぐことができると同時に、簡易な測定器を用いて高周波信号を問題なく測定できる。
【図面の簡単な説明】
【図１】本発明の高周波半導体装置の実施の形態に係る構成を示す図。
【図２】好ましくない、高周波半導体装置の構成例を示す図。
【図３】本発明の高周波用半導体装置の測定状況を説明する図。
【図４】本発明の高周波用半導体装置の他の測定状況を説明する図。
【図５】高周波用半導体装置の測定状況を説明する図。
【符号の説明】
１１ 高周波用半導体装置
１２ ＰＬＬ回路
１３ 分周回路
１４ 高周波信号出力端子
１５ 分周回路入力端子
１６ 分周回路出力端子
１７ 外部接続線
２１、３１ 測定用治具
２２ スイッチ
３２、３３ 切り替えスイッチ[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a high-frequency semiconductor device including high-frequency signal generating means, and more particularly to a high-frequency semiconductor device that can measure a high-frequency output signal.
[0002]
[Prior art]
In a semiconductor device having a high-frequency signal generating means for generating a high-frequency signal such as a PLL circuit and outputting the generated high-frequency signal to the outside, it is necessary to measure whether or not a specified high-frequency signal is output.
[0003]
FIG. 5 is a diagram schematically illustrating a conventional method for measuring a high-frequency semiconductor device that outputs a high-frequency signal. In FIG. 5, the high-frequency semiconductor device 51 includes a PLL circuit 52 as high-frequency signal generation means, and is configured to output a high-frequency signal from an external terminal 53. The measurement of the high-frequency output signal of the semiconductor device 51 is performed by connecting a measuring instrument 54 to the external terminal 53 via a measurement cable 55.
[0004]
[Problems to be solved by the invention]
With the conventional measurement method, it has been possible to measure without any problem when the frequency of the output high-frequency signal is relatively low. However, when the frequency of the output high frequency signal exceeds 100 MHz, the signal quality is attenuated in the measurement cable 55 up to the measuring instrument 54 or the harmonic component of the signal is lost, so that the waveform quality is reduced. Will fall. Although not shown, in order to connect the measurement cable 55 to the external terminal 53 of the semiconductor device 51, the semiconductor device 51 is accommodated in an IC socket, and this is mounted on a measurement jig substrate, and this measurement It goes through an external connection connector provided on the jig substrate.
[0005]
Due to such measurement problems, the high-frequency signal output from the high-frequency semiconductor device 51 cannot be accurately transmitted to the measuring instrument, making it difficult to correctly measure the high-frequency signal. .
[0006]
In addition, even if the high frequency signal can be transmitted to the measuring instrument with good quality by some device, as the frequency of the high frequency signal increases, the capacity of the measuring instrument is updated to a frequency band capable of measuring that frequency. There is also a problem on the measuring instrument side.
[0007]
Therefore, an object of the present invention is to provide a high-frequency semiconductor device that can measure a signal having a higher frequency while using a simple measuring instrument similar to the conventional one.
[0008]
[Means for Solving the Problems]
The high-frequency semiconductor device according to claim 1 is generated by a high-frequency signal generating unit that generates a high-frequency signal, a frequency dividing unit that divides and outputs an input signal by a predetermined ratio, and the high-frequency signal generating unit. A high- frequency signal output terminal that is a first external terminal for deriving a high-frequency signal to the outside, and a second external terminal that is connected to the input of the frequency dividing means and that can be connected to the high-frequency signal output terminal externally If, possess a third external terminal connected to the output of the frequency division means a measuring terminal,
The high-frequency signal output terminal and the second external terminal are externally interconnected, and the output from the high-frequency signal generating means is measured at the third external terminal connected to the output of the frequency dividing means. To do.
[0009]
According to the high frequency semiconductor device of the first aspect of the present invention, a frequency dividing circuit is provided in the semiconductor device, and a high frequency signal output from a high frequency generating means such as a PLL circuit is passed through the frequency dividing circuit to be relatively low. It is converted to a frequency signal and measured. A high-frequency signal obtained by taking in a signal once output from the external terminal of the semiconductor device through another external terminal is used as the input of the frequency dividing circuit.
[0010]
Thereby, it can be confirmed that the high-frequency signal is reliably output from the semiconductor device.
[0011]
In addition, by using this frequency divider circuit, it is possible to measure with a relatively low signal, so that it is possible to prevent deterioration in waveform quality in the measurement circuit, and at the same time, there is no problem with high-frequency signals using a simple measuring instrument. It can be measured.
[0012]
DETAILED DESCRIPTION OF THE INVENTION
FIG. 1 is a diagram showing an embodiment of a high-frequency semiconductor device of the present invention, and FIG. 2 shows an unfavorable configuration of a high-frequency semiconductor device shown as a reference.
[0013]
In FIG. 1, a high-frequency semiconductor device 11 includes a PLL circuit 12 that outputs a frequency signal of 100 MHz, for example, as high-frequency signal generating means. The high frequency output signal of the PLL circuit 12 is led to the high frequency signal output terminal 14 which is the first external terminal through the connection line 14a.
[0014]
In addition, the high-frequency semiconductor device 11 includes a frequency divider 13. The frequency dividing circuit 13 divides the frequency of the input signal by 1 / N according to the frequency dividing ratio N and outputs the divided signal. The input is a second external terminal via the connection line 15a. It is supplied from the frequency dividing circuit input terminal 15. The frequency division ratio N is appropriately determined, for example, N = 4, 10. And the output is derived | led-out to the frequency divider circuit output terminal 16 which is a 3rd external terminal via the connection line 16a.
[0015]
In order to measure the high-frequency signal of the high-frequency semiconductor device 11 configured as described above, as shown in FIG. 1, the high-frequency signal output terminal 14 and the divider circuit input terminal 15 are connected to the outside of the high-frequency semiconductor device 11. Short-circuit using the external connection line 17. As a result, the high frequency signal generated by the PLL circuit 12 is input to the frequency dividing circuit 13 via the high frequency signal output terminal 14, the external connection line 17, and the frequency dividing circuit input terminal 15. This input high frequency signal is frequency-divided to a relatively low frequency in accordance with the frequency division ratio N, and is derived to the frequency divider output terminal 16.
[0016]
Then, a measuring instrument is connected to the frequency dividing circuit output terminal 16 to measure a high frequency signal divided to a relatively low frequency. The frequency divider 13 is provided exclusively for measurement, but can be used for other purposes as required.
[0017]
Since the frequency dividing circuit 13 is built in the same semiconductor device as the PLL circuit 12, that is, in the same chip, the distance between them is short and there is no problem in wiring. No problem. Therefore, this measuring device may have a performance capable of measuring a relatively low frequency derived to the frequency divider output terminal 16, and the waveform quality of the derived signal is also kept good as described above. From the above, it is possible to measure accurately in the same manner as the direct measurement of the original high frequency signal derived from the high frequency signal output terminal 14.
[0018]
Further, the high frequency signal output terminal 14 and the frequency dividing circuit input terminal 15 are short-circuited by the external connection line 17 outside the high frequency semiconductor device 11. This is because the high-frequency signal to be measured is once output to the outside by the high-frequency signal output terminal 14 of the high-frequency semiconductor device 11, and this high-frequency signal is again introduced into the high-frequency semiconductor device 11 and measured. It has been confirmed that the semiconductor device 11, particularly the PLL circuit 12, which is a high-frequency signal generating means, is operating correctly.
[0019]
With respect to this point, an undesirable configuration example of the high-frequency semiconductor device will be described with reference to FIG. FIG. 2 shows a high-frequency semiconductor device 11 ′, and components corresponding to those in FIG. 1, which is an embodiment of the present invention, are denoted by the same reference numerals, and will not be described again for the sake of simplicity.
[0020]
In FIG. 2, the high frequency signal output of the PLL circuit 12 is directly input to the frequency divider circuit 13 through the connection line 12b. And it has led out to the high frequency output terminal 18 which is an external terminal from the connection line 12a via the connection line 18a.
[0021]
2, it is possible to measure a relatively low frequency signal obtained by dividing the high frequency signal by the frequency dividing circuit 13 at the frequency dividing circuit output terminal 16. However, since the high-frequency signal output of the PLL circuit 12 is branched in the middle by the connection line 12b and the connection line 18a, one is supplied to the frequency-dividing circuit 13 and the other is supplied to the high-frequency output terminal 18. Even if the measurement can be performed at 16, it can be confirmed that a predetermined high-frequency signal is output from the original high-frequency output terminal 18 as in the case where there is a defect at the point of the cross mark of the connection line 18a. Can not. For this reason, the configuration as shown in FIG. 2 is not preferable.
[0022]
3 and 4 are diagrams for explaining the measurement status of the high-frequency semiconductor device 11 of the present invention. In these drawings, the same components as those in the high-frequency semiconductor device 11 in FIG.
[0023]
In FIG. 3, reference numeral 21 conceptually shows a measuring jig, and has a switch 22 inside. The switch 22 is connected between the high frequency signal output terminal 14 and the frequency dividing circuit input terminal 15. At the time of measurement, the high-frequency semiconductor device 11 is coupled to the measurement jig 21 and the switch 22 is closed to measure a high-frequency signal obtained by dividing the frequency derived to the frequency dividing circuit output terminal 16. The switch 23 and the resistor 24 are connected to the connection line 15a. The switch 23 is opened during measurement, and is closed during use of the high-frequency semiconductor device 11 to fix the input terminal of the frequency divider circuit 13 at a constant potential such as a power supply voltage or a ground point. When the measurement of the high frequency signal is completed, the high frequency semiconductor device 11 is removed from the measurement jig 21.
[0024]
In FIG. 4, 31 conceptually shows another measurement jig, and has changeover switches 32 and 33 inside. At the time of measurement, the high-frequency semiconductor device 11 is coupled to the measurement jig 21, the changeover switches 32 and 33 are switched to the state shown in the figure, and the high-frequency signal output terminal 14 and the frequency divider circuit input terminal 15 are short-circuited. In this state, a high-frequency signal whose frequency is divided and is derived to the frequency divider output terminal 16 is measured.
[0025]
When the changeover switches 32 and 33 are switched to a state opposite to the illustrated state, the high frequency signal output terminal 14 is connected to the output terminal 34 of the measuring jig, and a high frequency signal is output from the output terminal 34. Further, the frequency dividing circuit input terminal 15 is connected to the ground point inside the measuring jig 31, and the input end of the frequency dividing circuit 13 is fixed to the ground potential.
[0026]
Therefore, even when the measurement jig 31 is attached so as to measure a high frequency signal obtained by dividing the frequency derived to the frequency divider output terminal 16, it can be used in the same state as the normal use state. . Of course, in actual use, the high-frequency semiconductor device 11 is removed from the measurement jig 31 for use. In this case, it is desirable to separately connect the frequency dividing circuit input terminal 15 to the fixed potential point.
[0027]
【The invention's effect】
According to the high frequency semiconductor device of the present invention, a frequency dividing circuit is provided in the semiconductor device, and the high frequency signal output from the high frequency signal generating means such as a PLL circuit is relatively passed through the frequency dividing circuit. Convert to low frequency signal and measure. A high-frequency signal obtained by taking in a signal once output from the external terminal of the semiconductor device through another external terminal is used as the input of the frequency dividing circuit.
[0028]
Thereby, it can be confirmed that the high-frequency signal is reliably output from the semiconductor device.
[0029]
In addition, by using this frequency dividing circuit, it is possible to measure at a relatively low frequency, so that it is possible to prevent deterioration in waveform quality in the measuring circuit, and at the same time, there is no problem with high-frequency signals using a simple measuring instrument. It can be measured.
[Brief description of the drawings]
FIG. 1 is a diagram showing a configuration according to an embodiment of a high-frequency semiconductor device of the present invention.
FIG. 2 is a diagram showing a configuration example of a high-frequency semiconductor device that is not preferable.
FIG. 3 is a view for explaining the measurement status of the high-frequency semiconductor device of the present invention.
FIG. 4 is a diagram for explaining another measurement state of the high-frequency semiconductor device of the present invention.
FIG. 5 is a diagram for explaining a measurement state of a high-frequency semiconductor device.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 11 High frequency semiconductor device 12 PLL circuit 13 Frequency dividing circuit 14 High frequency signal output terminal 15 Frequency dividing circuit input terminal 16 Frequency dividing circuit output terminal 17 External connection line 21, 31 Measuring jig 22 Switch 32, 33 Changeover switch

Claims (1)

高周波信号を発生する高周波信号発生手段と、
入力される信号を所定の比で分周して出力する分周手段と、
この高周波信号発生手段で発生された高周波信号を外部に導出するための第１外部端子である高周波信号出力端子と、
前記分周手段の入力に接続され、且つ前記高周波信号出力端子と外部で接続可能に設けられた第２外部端子と、
前記分周手段の出力に接続され測定用端子となる第３外部端子とを有し、
前記高周波信号出力端子と前記第２外部端子とを外部で相互接続し、前記分周手段の出力に接続された前記第３外部端子で前記高周波信号発生手段からの出力を測定することを特徴とする高周波用半導体装置。High-frequency signal generating means for generating a high-frequency signal;
Frequency dividing means for dividing an input signal by a predetermined ratio and outputting it,
And a high frequency signal output terminal is a first external terminal for deriving a high frequency signal generated by the high-frequency signal generating means to the outside,
A second external terminal connected to the input of the frequency dividing means and provided to be externally connectable to the high-frequency signal output terminal ;
Have a third external terminal connected to the output of the frequency division means a measuring terminal,
The high-frequency signal output terminal and the second external terminal are externally interconnected, and the output from the high-frequency signal generating means is measured at the third external terminal connected to the output of the frequency dividing means. A high-frequency semiconductor device.
JP2000088072A 2000-03-28 2000-03-28 High frequency semiconductor devices Expired - Fee Related JP3730473B2 (en)

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