JP3722731B2 - レーザ加工方法 - Google Patents
レーザ加工方法 Download PDFInfo
- Publication number
- JP3722731B2 JP3722731B2 JP2001278752A JP2001278752A JP3722731B2 JP 3722731 B2 JP3722731 B2 JP 3722731B2 JP 2001278752 A JP2001278752 A JP 2001278752A JP 2001278752 A JP2001278752 A JP 2001278752A JP 3722731 B2 JP3722731 B2 JP 3722731B2
- Authority
- JP
- Japan
- Prior art keywords
- workpiece
- laser
- along
- region
- laser beam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000003672 processing method Methods 0.000 title claims description 64
- 238000005520 cutting process Methods 0.000 claims description 145
- 238000012545 processing Methods 0.000 claims description 119
- 238000010521 absorption reaction Methods 0.000 claims description 45
- 230000001678 irradiating effect Effects 0.000 claims description 25
- 239000004065 semiconductor Substances 0.000 claims description 24
- 238000010128 melt processing Methods 0.000 claims description 22
- 239000000463 material Substances 0.000 claims description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 38
- 235000012431 wafers Nutrition 0.000 description 37
- 229910052710 silicon Inorganic materials 0.000 description 35
- 239000010703 silicon Substances 0.000 description 35
- 230000010287 polarization Effects 0.000 description 23
- 238000003384 imaging method Methods 0.000 description 21
- 238000002844 melting Methods 0.000 description 18
- 230000008018 melting Effects 0.000 description 18
- 238000000034 method Methods 0.000 description 15
- 239000011521 glass Substances 0.000 description 14
- 239000000758 substrate Substances 0.000 description 14
- 230000015572 biosynthetic process Effects 0.000 description 13
- 230000005684 electric field Effects 0.000 description 11
- 230000003287 optical effect Effects 0.000 description 11
- 230000008859 change Effects 0.000 description 9
- 238000010586 diagram Methods 0.000 description 7
- 238000002834 transmittance Methods 0.000 description 7
- 239000013078 crystal Substances 0.000 description 6
- 230000006378 damage Effects 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 5
- 239000004973 liquid crystal related substance Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 4
- 238000005336 cracking Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 230000010355 oscillation Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 239000005297 pyrex Substances 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- 230000035882 stress Effects 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000013256 coordination polymer Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000010309 melting process Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000002407 reforming Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 230000003685 thermal hair damage Effects 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/40—Semiconductor devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
- Laser Beam Processing (AREA)
- Re-Forming, After-Treatment, Cutting And Transporting Of Glass Products (AREA)
- Dicing (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001278752A JP3722731B2 (ja) | 2000-09-13 | 2001-09-13 | レーザ加工方法 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000278306 | 2000-09-13 | ||
JP2000-278306 | 2000-09-13 | ||
JP2001278752A JP3722731B2 (ja) | 2000-09-13 | 2001-09-13 | レーザ加工方法 |
Related Child Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2002097725A Division JP3867003B2 (ja) | 2000-09-13 | 2002-03-29 | レーザ加工方法 |
JP2005207559A Division JP4837320B2 (ja) | 2000-09-13 | 2005-07-15 | 加工対象物切断方法 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2002192369A JP2002192369A (ja) | 2002-07-10 |
JP2002192369A5 JP2002192369A5 (enrdf_load_stackoverflow) | 2005-09-02 |
JP3722731B2 true JP3722731B2 (ja) | 2005-11-30 |
Family
ID=26599877
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2001278752A Expired - Lifetime JP3722731B2 (ja) | 2000-09-13 | 2001-09-13 | レーザ加工方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP3722731B2 (enrdf_load_stackoverflow) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8314013B2 (en) | 2002-03-12 | 2012-11-20 | Hamamatsu Photonics K.K. | Semiconductor chip manufacturing method |
Families Citing this family (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4659300B2 (ja) | 2000-09-13 | 2011-03-30 | 浜松ホトニクス株式会社 | レーザ加工方法及び半導体チップの製造方法 |
WO2003038880A1 (fr) | 2001-10-31 | 2003-05-08 | Mitsuboshi Diamond Industrial Co., Ltd. | Procede de formation de chemin de decoupe sur une tranche de semi-conducteur, et dispositif pour former un chemin de decoupe |
TWI326626B (en) | 2002-03-12 | 2010-07-01 | Hamamatsu Photonics Kk | Laser processing method |
ES2356817T3 (es) | 2002-03-12 | 2011-04-13 | Hamamatsu Photonics K.K. | Método de corte de un objeto procesado. |
TWI520269B (zh) | 2002-12-03 | 2016-02-01 | Hamamatsu Photonics Kk | Cutting method of semiconductor substrate |
FR2852250B1 (fr) | 2003-03-11 | 2009-07-24 | Jean Luc Jouvin | Fourreau de protection pour canule, un ensemble d'injection comportant un tel fourreau et aiguille equipee d'un tel fourreau |
EP1609559B1 (en) | 2003-03-12 | 2007-08-08 | Hamamatsu Photonics K. K. | Laser beam machining method |
JP2004299969A (ja) * | 2003-03-31 | 2004-10-28 | Toshiba Ceramics Co Ltd | シリカガラスのスライス方法 |
KR101121495B1 (ko) * | 2003-05-12 | 2012-03-15 | 가부시키가이샤 토쿄 세이미쯔 | 판상부재의 분할방법 및 분할장치 |
JP4640174B2 (ja) * | 2003-05-22 | 2011-03-02 | 株式会社東京精密 | レーザーダイシング装置 |
JP4563097B2 (ja) | 2003-09-10 | 2010-10-13 | 浜松ホトニクス株式会社 | 半導体基板の切断方法 |
JP2007235068A (ja) | 2006-03-03 | 2007-09-13 | Tokyo Seimitsu Co Ltd | ウェーハ加工方法 |
JP2007235069A (ja) | 2006-03-03 | 2007-09-13 | Tokyo Seimitsu Co Ltd | ウェーハ加工方法 |
US9346130B2 (en) | 2008-12-17 | 2016-05-24 | Electro Scientific Industries, Inc. | Method for laser processing glass with a chamfered edge |
US8341976B2 (en) | 2009-02-19 | 2013-01-01 | Corning Incorporated | Method of separating strengthened glass |
US8327666B2 (en) | 2009-02-19 | 2012-12-11 | Corning Incorporated | Method of separating strengthened glass |
WO2010098186A1 (ja) | 2009-02-25 | 2010-09-02 | 日亜化学工業株式会社 | 半導体素子の製造方法 |
JP5340807B2 (ja) * | 2009-05-21 | 2013-11-13 | 株式会社ディスコ | 半導体ウエーハの加工方法 |
JP5340806B2 (ja) * | 2009-05-21 | 2013-11-13 | 株式会社ディスコ | 半導体ウエーハのレーザ加工方法 |
JP5340808B2 (ja) * | 2009-05-21 | 2013-11-13 | 株式会社ディスコ | 半導体ウエーハのレーザ加工方法 |
EP2480507A1 (en) | 2009-08-28 | 2012-08-01 | Corning Incorporated | Methods for laser cutting articles from chemically strengthened glass substrates |
US9828278B2 (en) | 2012-02-28 | 2017-11-28 | Electro Scientific Industries, Inc. | Method and apparatus for separation of strengthened glass and articles produced thereby |
WO2013130549A1 (en) | 2012-02-28 | 2013-09-06 | Electro Scientific Industries, Inc. | Method and apparatus for separation of strengthened glass and articles produced thereby |
US10357850B2 (en) * | 2012-09-24 | 2019-07-23 | Electro Scientific Industries, Inc. | Method and apparatus for machining a workpiece |
US20130221053A1 (en) * | 2012-02-28 | 2013-08-29 | Electro Scientific Industries, Inc. | Method and apparatus for separation of strengthened glass and articles produced thereby |
WO2013130608A1 (en) * | 2012-02-29 | 2013-09-06 | Electro Scientific Industries, Inc. | Methods and apparatus for machining strengthened glass and articles produced thereby |
US9776906B2 (en) | 2014-03-28 | 2017-10-03 | Electro Scientific Industries, Inc. | Laser machining strengthened glass |
JP2016058429A (ja) * | 2014-09-05 | 2016-04-21 | 株式会社ディスコ | ウエーハの加工方法 |
JP6783374B2 (ja) * | 2016-07-15 | 2020-11-11 | テラダイオード, インコーポレーテッド | 可変ビーム形状を有するレーザを利用する材料処理 |
CN114227957B (zh) * | 2021-12-20 | 2024-03-26 | 常州时创能源股份有限公司 | 硅棒切割方法 |
-
2001
- 2001-09-13 JP JP2001278752A patent/JP3722731B2/ja not_active Expired - Lifetime
Cited By (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8314013B2 (en) | 2002-03-12 | 2012-11-20 | Hamamatsu Photonics K.K. | Semiconductor chip manufacturing method |
US8518801B2 (en) | 2002-03-12 | 2013-08-27 | Hamamatsu Photonics K.K. | Substrate dividing method |
US8519511B2 (en) | 2002-03-12 | 2013-08-27 | Hamamatsu Photonics K.K. | Substrate dividing method |
US8518800B2 (en) | 2002-03-12 | 2013-08-27 | Hamamatsu Photonics K.K. | Substrate dividing method |
US8889525B2 (en) | 2002-03-12 | 2014-11-18 | Hamamatsu Photonics K.K. | Substrate dividing method |
US9142458B2 (en) | 2002-03-12 | 2015-09-22 | Hamamatsu Photonics K.K. | Substrate dividing method |
US9287177B2 (en) | 2002-03-12 | 2016-03-15 | Hamamatsu Photonics K.K. | Substrate dividing method |
US9543256B2 (en) | 2002-03-12 | 2017-01-10 | Hamamatsu Photonics K.K. | Substrate dividing method |
US9543207B2 (en) | 2002-03-12 | 2017-01-10 | Hamamatsu Photonics K.K. | Substrate dividing method |
US9548246B2 (en) | 2002-03-12 | 2017-01-17 | Hamamatsu Photonics K.K. | Substrate dividing method |
US9553023B2 (en) | 2002-03-12 | 2017-01-24 | Hamamatsu Photonics K.K. | Substrate dividing method |
US9711405B2 (en) | 2002-03-12 | 2017-07-18 | Hamamatsu Photonics K.K. | Substrate dividing method |
US10068801B2 (en) | 2002-03-12 | 2018-09-04 | Hamamatsu Photonics K.K. | Substrate dividing method |
US10622255B2 (en) | 2002-03-12 | 2020-04-14 | Hamamatsu Photonics K.K. | Substrate dividing method |
US11424162B2 (en) | 2002-03-12 | 2022-08-23 | Hamamatsu Photonics K.K. | Substrate dividing method |
Also Published As
Publication number | Publication date |
---|---|
JP2002192369A (ja) | 2002-07-10 |
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