JP3722731B2 - レーザ加工方法 - Google Patents

レーザ加工方法 Download PDF

Info

Publication number
JP3722731B2
JP3722731B2 JP2001278752A JP2001278752A JP3722731B2 JP 3722731 B2 JP3722731 B2 JP 3722731B2 JP 2001278752 A JP2001278752 A JP 2001278752A JP 2001278752 A JP2001278752 A JP 2001278752A JP 3722731 B2 JP3722731 B2 JP 3722731B2
Authority
JP
Japan
Prior art keywords
workpiece
laser
along
region
laser beam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2001278752A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002192369A (ja
JP2002192369A5 (enrdf_load_stackoverflow
Inventor
文嗣 福世
憲志 福満
直己 内山
敏光 和久田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hamamatsu Photonics KK
Original Assignee
Hamamatsu Photonics KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hamamatsu Photonics KK filed Critical Hamamatsu Photonics KK
Priority to JP2001278752A priority Critical patent/JP3722731B2/ja
Publication of JP2002192369A publication Critical patent/JP2002192369A/ja
Publication of JP2002192369A5 publication Critical patent/JP2002192369A5/ja
Application granted granted Critical
Publication of JP3722731B2 publication Critical patent/JP3722731B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36Removing material
    • B23K26/40Removing material taking account of the properties of the material involved
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00Articles made by soldering, welding or cutting
    • B23K2101/36Electric or electronic devices
    • B23K2101/40Semiconductor devices
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00Materials to be soldered, welded or cut
    • B23K2103/50Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Laser Beam Processing (AREA)
  • Re-Forming, After-Treatment, Cutting And Transporting Of Glass Products (AREA)
  • Dicing (AREA)
JP2001278752A 2000-09-13 2001-09-13 レーザ加工方法 Expired - Lifetime JP3722731B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001278752A JP3722731B2 (ja) 2000-09-13 2001-09-13 レーザ加工方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2000278306 2000-09-13
JP2000-278306 2000-09-13
JP2001278752A JP3722731B2 (ja) 2000-09-13 2001-09-13 レーザ加工方法

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2002097725A Division JP3867003B2 (ja) 2000-09-13 2002-03-29 レーザ加工方法
JP2005207559A Division JP4837320B2 (ja) 2000-09-13 2005-07-15 加工対象物切断方法

Publications (3)

Publication Number Publication Date
JP2002192369A JP2002192369A (ja) 2002-07-10
JP2002192369A5 JP2002192369A5 (enrdf_load_stackoverflow) 2005-09-02
JP3722731B2 true JP3722731B2 (ja) 2005-11-30

Family

ID=26599877

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001278752A Expired - Lifetime JP3722731B2 (ja) 2000-09-13 2001-09-13 レーザ加工方法

Country Status (1)

Country Link
JP (1) JP3722731B2 (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8314013B2 (en) 2002-03-12 2012-11-20 Hamamatsu Photonics K.K. Semiconductor chip manufacturing method

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4659300B2 (ja) 2000-09-13 2011-03-30 浜松ホトニクス株式会社 レーザ加工方法及び半導体チップの製造方法
WO2003038880A1 (fr) 2001-10-31 2003-05-08 Mitsuboshi Diamond Industrial Co., Ltd. Procede de formation de chemin de decoupe sur une tranche de semi-conducteur, et dispositif pour former un chemin de decoupe
TWI326626B (en) 2002-03-12 2010-07-01 Hamamatsu Photonics Kk Laser processing method
ES2356817T3 (es) 2002-03-12 2011-04-13 Hamamatsu Photonics K.K. Método de corte de un objeto procesado.
TWI520269B (zh) 2002-12-03 2016-02-01 Hamamatsu Photonics Kk Cutting method of semiconductor substrate
FR2852250B1 (fr) 2003-03-11 2009-07-24 Jean Luc Jouvin Fourreau de protection pour canule, un ensemble d'injection comportant un tel fourreau et aiguille equipee d'un tel fourreau
EP1609559B1 (en) 2003-03-12 2007-08-08 Hamamatsu Photonics K. K. Laser beam machining method
JP2004299969A (ja) * 2003-03-31 2004-10-28 Toshiba Ceramics Co Ltd シリカガラスのスライス方法
KR101121495B1 (ko) * 2003-05-12 2012-03-15 가부시키가이샤 토쿄 세이미쯔 판상부재의 분할방법 및 분할장치
JP4640174B2 (ja) * 2003-05-22 2011-03-02 株式会社東京精密 レーザーダイシング装置
JP4563097B2 (ja) 2003-09-10 2010-10-13 浜松ホトニクス株式会社 半導体基板の切断方法
JP2007235068A (ja) 2006-03-03 2007-09-13 Tokyo Seimitsu Co Ltd ウェーハ加工方法
JP2007235069A (ja) 2006-03-03 2007-09-13 Tokyo Seimitsu Co Ltd ウェーハ加工方法
US9346130B2 (en) 2008-12-17 2016-05-24 Electro Scientific Industries, Inc. Method for laser processing glass with a chamfered edge
US8341976B2 (en) 2009-02-19 2013-01-01 Corning Incorporated Method of separating strengthened glass
US8327666B2 (en) 2009-02-19 2012-12-11 Corning Incorporated Method of separating strengthened glass
WO2010098186A1 (ja) 2009-02-25 2010-09-02 日亜化学工業株式会社 半導体素子の製造方法
JP5340807B2 (ja) * 2009-05-21 2013-11-13 株式会社ディスコ 半導体ウエーハの加工方法
JP5340806B2 (ja) * 2009-05-21 2013-11-13 株式会社ディスコ 半導体ウエーハのレーザ加工方法
JP5340808B2 (ja) * 2009-05-21 2013-11-13 株式会社ディスコ 半導体ウエーハのレーザ加工方法
EP2480507A1 (en) 2009-08-28 2012-08-01 Corning Incorporated Methods for laser cutting articles from chemically strengthened glass substrates
US9828278B2 (en) 2012-02-28 2017-11-28 Electro Scientific Industries, Inc. Method and apparatus for separation of strengthened glass and articles produced thereby
WO2013130549A1 (en) 2012-02-28 2013-09-06 Electro Scientific Industries, Inc. Method and apparatus for separation of strengthened glass and articles produced thereby
US10357850B2 (en) * 2012-09-24 2019-07-23 Electro Scientific Industries, Inc. Method and apparatus for machining a workpiece
US20130221053A1 (en) * 2012-02-28 2013-08-29 Electro Scientific Industries, Inc. Method and apparatus for separation of strengthened glass and articles produced thereby
WO2013130608A1 (en) * 2012-02-29 2013-09-06 Electro Scientific Industries, Inc. Methods and apparatus for machining strengthened glass and articles produced thereby
US9776906B2 (en) 2014-03-28 2017-10-03 Electro Scientific Industries, Inc. Laser machining strengthened glass
JP2016058429A (ja) * 2014-09-05 2016-04-21 株式会社ディスコ ウエーハの加工方法
JP6783374B2 (ja) * 2016-07-15 2020-11-11 テラダイオード, インコーポレーテッド 可変ビーム形状を有するレーザを利用する材料処理
CN114227957B (zh) * 2021-12-20 2024-03-26 常州时创能源股份有限公司 硅棒切割方法

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8314013B2 (en) 2002-03-12 2012-11-20 Hamamatsu Photonics K.K. Semiconductor chip manufacturing method
US8518801B2 (en) 2002-03-12 2013-08-27 Hamamatsu Photonics K.K. Substrate dividing method
US8519511B2 (en) 2002-03-12 2013-08-27 Hamamatsu Photonics K.K. Substrate dividing method
US8518800B2 (en) 2002-03-12 2013-08-27 Hamamatsu Photonics K.K. Substrate dividing method
US8889525B2 (en) 2002-03-12 2014-11-18 Hamamatsu Photonics K.K. Substrate dividing method
US9142458B2 (en) 2002-03-12 2015-09-22 Hamamatsu Photonics K.K. Substrate dividing method
US9287177B2 (en) 2002-03-12 2016-03-15 Hamamatsu Photonics K.K. Substrate dividing method
US9543256B2 (en) 2002-03-12 2017-01-10 Hamamatsu Photonics K.K. Substrate dividing method
US9543207B2 (en) 2002-03-12 2017-01-10 Hamamatsu Photonics K.K. Substrate dividing method
US9548246B2 (en) 2002-03-12 2017-01-17 Hamamatsu Photonics K.K. Substrate dividing method
US9553023B2 (en) 2002-03-12 2017-01-24 Hamamatsu Photonics K.K. Substrate dividing method
US9711405B2 (en) 2002-03-12 2017-07-18 Hamamatsu Photonics K.K. Substrate dividing method
US10068801B2 (en) 2002-03-12 2018-09-04 Hamamatsu Photonics K.K. Substrate dividing method
US10622255B2 (en) 2002-03-12 2020-04-14 Hamamatsu Photonics K.K. Substrate dividing method
US11424162B2 (en) 2002-03-12 2022-08-23 Hamamatsu Photonics K.K. Substrate dividing method

Also Published As

Publication number Publication date
JP2002192369A (ja) 2002-07-10

Similar Documents

Publication Publication Date Title
JP3722731B2 (ja) レーザ加工方法
JP3626442B2 (ja) レーザ加工方法
JP4659300B2 (ja) レーザ加工方法及び半導体チップの製造方法
JP4964376B2 (ja) レーザ加工装置及びレーザ加工方法
JP4762458B2 (ja) レーザ加工装置
JPWO2003076119A1 (ja) 加工対象物切断方法
JP2002192371A (ja) レーザ加工方法及びレーザ加工装置
JP3867109B2 (ja) レーザ加工方法
JP4659301B2 (ja) レーザ加工方法
JP4837320B2 (ja) 加工対象物切断方法
JP3751970B2 (ja) レーザ加工装置
JP4167094B2 (ja) レーザ加工方法
JP3867107B2 (ja) レーザ加工方法
JP3867108B2 (ja) レーザ加工装置
JP3867110B2 (ja) レーザ加工方法
JP4664140B2 (ja) レーザ加工方法
JP3867102B2 (ja) 半導体材料基板の切断方法
JP3867101B2 (ja) 半導体材料基板の切断方法
JP3867103B2 (ja) 半導体材料基板の切断方法
JP2006192506A (ja) レーザ加工方法
JP2006255789A (ja) レーザ加工方法
JP2006167809A (ja) レーザ加工方法
JP3867003B2 (ja) レーザ加工方法
JP2006148175A (ja) レーザ加工方法
JP4095092B2 (ja) 半導体チップ

Legal Events

Date Code Title Description
A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20050302

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20050302

A871 Explanation of circumstances concerning accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A871

Effective date: 20050302

A975 Report on accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A971005

Effective date: 20050316

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20050517

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20050715

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20050906

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20050913

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

Ref document number: 3722731

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

S531 Written request for registration of change of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313532

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20080922

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20090922

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100922

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110922

Year of fee payment: 6

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110922

Year of fee payment: 6

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120922

Year of fee payment: 7

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120922

Year of fee payment: 7

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130922

Year of fee payment: 8

EXPY Cancellation because of completion of term