JP3721588B2 - Method for manufacturing silicon carbide semiconductor device - Google Patents
Method for manufacturing silicon carbide semiconductor device Download PDFInfo
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- JP3721588B2 JP3721588B2 JP23979894A JP23979894A JP3721588B2 JP 3721588 B2 JP3721588 B2 JP 3721588B2 JP 23979894 A JP23979894 A JP 23979894A JP 23979894 A JP23979894 A JP 23979894A JP 3721588 B2 JP3721588 B2 JP 3721588B2
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- silicon carbide
- carbide semiconductor
- ion implantation
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- 229910010271 silicon carbide Inorganic materials 0.000 title claims description 33
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims description 32
- 239000004065 semiconductor Substances 0.000 title claims description 26
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 238000000034 method Methods 0.000 title claims description 11
- 238000005468 ion implantation Methods 0.000 claims description 25
- 238000010438 heat treatment Methods 0.000 claims description 17
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 15
- 239000001301 oxygen Substances 0.000 claims description 15
- 229910052760 oxygen Inorganic materials 0.000 claims description 15
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 12
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 11
- 239000013078 crystal Substances 0.000 claims description 9
- 230000007547 defect Effects 0.000 claims description 9
- 230000004888 barrier function Effects 0.000 claims 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 15
- 239000010410 layer Substances 0.000 description 12
- 229910052757 nitrogen Inorganic materials 0.000 description 9
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 5
- 239000012298 atmosphere Substances 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 239000011261 inert gas Substances 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- -1 nitrogen ions Chemical class 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/0455—Making n or p doped regions or layers, e.g. using diffusion
- H01L21/046—Making n or p doped regions or layers, e.g. using diffusion using ion implantation
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
- Formation Of Insulating Films (AREA)
Description
【０００１】
【産業上の利用分野】
本発明は、炭化けい素（以下ＳｉＣと記す）からなる半導体素子の製造方法に関する。
【０００２】
【従来の技術】
半導体材料として広く用いられているシリコン（Ｓｉ）に対して、その性能限界が考慮され、過酷な環境下でも使用に耐える半導体材料が模索されている。そして、例えば、３ｅＶ（エレクトロンボルト）のバンドギャップを持つＳｉＣのようなワイドギャップ半導体が次世代の半導体材料として有望視されている。ＳｉＣはＳｉと比較して、熱伝導度が３倍、最大電界強度が１０倍、電子のドリフト速度が２倍と優れた特性をもっている。既に、このＳｉＣの特性を生かし、１．１ｋＶの高耐圧ショットキーダイオードが試作されたことが報告されている〔ＳｉＣ及び関連ワイドギャップ半導体研究会第２回講演予稿集、１９頁、１９９３年１１月〕。
【０００３】
【発明が解決しようとする課題】
前述のショットキーダイオードは、ＳｉＣ基板上にｎ型ＳｉＣをエピタキシャル成長させた後、ショットキー電極として金（Ａｕ）、オーミック電極としてニッケル（Ｎｉ）を形成して、作成された半導体素子である。この製造工程には、イオン注入による拡散層の形成工程が含まれていなかった。しかし種々の半導体素子をＳｉＣを適用する場合に、イオン注入およびその後の熱処理による拡散層の形成が必要となる。ＳｉＣへのイオン注入に関しては、学会等で多数の研究がなされている〔例えば、ＳｉＣ及び関連ワイドギャップ半導体研究会第２回講演予稿集、２７頁、１９９３年１１月〕。そして、ＳｉＣへのイオン注入によって生じる結晶欠陥は、Ｓｉと同程度の１１００〜１２００℃の熱処理では回復しきらず、Ｓｉより高い１３００〜１４００℃の熱処理が必要となることが知られている。一方、イオン注入層は、未注入層と比較して、非常に酸化速度が早いからである〔シャパニーズジャーナルオブアプライドフィジックス、３３巻、Ｌ１１２１頁、１９９４年〕。一般に結晶欠陥の多い層の酸化速度は速いことが知られており、イオン注入によって生じた結晶欠陥の多いためと考えられる。
【０００４】
通常、イオン注入後の高温熱処理は、不活性ガス雰囲気下で行われるが、このとき、不活性ガス雰囲気中に含まれる微量の酸素により、イオン注入領域の表面層が酸化される心配がある。特に、イオン注入領域が非常に浅い場合は、注入領域が全部酸化されて、不純物拡散領域が形成できないことになる。
以上の問題に鑑み、 本発明の目的は、イオン注入後の熱処理時に、不活性ガス雰囲気中の酸素の影響を受けずに熱処理が行え、そして、充分に結晶欠陥を回復させることができるＳｉＣ半導体素子の製造方法を提供することにある。
【０００５】
【課題を解決するための手段】
上記の目的を達成するために、本発明のＳｉＣ半導体素子の製造方法は、炭化けい素半導体基板にイオン注入後、イオン注入した表面上に酸素遮蔽性の膜を形成し、１３００℃以上の高温熱処理を行うこととする。
また、炭化けい素半導体基板にイオン注入後、イオン注入した表面上に酸素遮蔽性の膜を形成し、１３００℃〜１４００℃の高温熱処理を行うこととする。
また、炭化けい素半導体基板にイオン注入後、イオン注入した表面上に酸素遮蔽性の膜を形成し、前記イオン注入時に生じた結晶欠陥を回復するように１３００℃以上の高温熱処理を行うこととする。
さらに、酸素遮蔽性の膜として窒化けい素膜を成膜することとする。
【０００６】
【作用】
上記の手段を講じ、イオン注入後、そのイオン注入した表面上に酸素遮蔽性の膜、例えば窒化膜を成膜することによつて、結晶欠陥の回復に充分な高温熱処理を可能にし、また熱処理雰囲気中の微量酸素による酸化を防止する。
窒化けい素膜の形成方法としては、高周波スパッタリング法、減圧ＣＶＤ法、またはプラズマＣＶＤ法のいずれの方法でも、緻密な成膜が可能である。
【０００７】
【実施例】
以下、図を引用して本発明の実施例について述べる。
図１（ａ）ないし（ｅ）は、本発明の製造方法にかかるＳｉＣ半導体素子の工程順に示した断面図であり、例としてｎｐｎトランジスタを取り上げる。６Ｈ−ＳｉＣのｎ型サブストレート１上に、ｎ型エピタキシャル層２、ｐ型エピタキシャル層３をエピタキシャル成長したＳｉＣエピタキシャルウェハ４を使用する〔図１（ａ）〕。ｎ型エピタキシャル層２は、ノンドープで厚さ５μｍ、ｐ型エピタキシャル層３は、不純物濃度が９．０×１０16ｃｍ-3で厚さ１．２μｍのものを用いた。このＳｉＣエピタキシャルウェハ４に、フォトレジスト５を塗布し、露光・現像を行い、イオン注入用の窓を開け、窒素イオン６を注入する〔同図（ｂ）〕。ここでは、イオン種として窒素（Ｎ+ ）を用いた。注入条件は、加速電圧が３５ｋｅＶでドーズ量が１．０×１０15ｃｍ-2、７０ｋｅＶで１．０×１０15ｃｍ-2、１５０ｋｅＶで４．０×１０15ｃｍ-2、１８０ｋｅＶで２．０×１０15ｃｍ-2という多重エネルギイオン注入を行った。窒素は、ＳｉＣにイオン注入されると、ｎ型領域を形成するドナー形成型の不純物である。この窒素イオン注入を行った部分をｎソース領域として利用することができる。多重エネルギイオン注入をしたのは、表面から深さ方向に０．３〜０．４μｍの距離で均一に１０19ｃｍ-3以上の窒素濃度を得るためである。イオン注入後、フォトレジスト５は、酸素プラズマにより灰化した後、剥離液を通して除去する。次に高周波スパッタリング法にて窒化けい素膜７を成膜する〔同図（ｃ）〕。高周波スパッタリングには、反応焼結法で作成したターゲットを用いた。ターゲットの組成は、けい素：窒素比が３：４のものである。ターゲットを叩くガスは、アルゴン：窒素＝１：１の混合ガスを用いた。高周波スパッタリング法で成膜した窒化けい素膜７は、膜中に水素（Ｈ）が含まれる割合が少ないので、膜質が緻密である。よって、高温環境においても表面保護膜として働く。続いて、窒素雰囲気下で１３００℃、５時間の熱処理を行う〔同図（ｄ）〕。この時にイオン注入時に生じた結晶欠陥は、ほぼ完全に回復する。また、前記窒素雰囲気中の微量酸素により、窒化けい素膜７の一部が酸化されて、窒化けい素膜７上に３０ｎｍ程度の酸化膜が形成される。また、この熱処理時にイオン注入された窒素がイオン化し（活性化率数％）、ドナーとなってｎエミッタ領域８が形成される。この後、フッ化水素酸（ＨＦ）をＨＦ：水＝１：１の割合で混合した希釈フッ化水素酸溶液を用い、窒化けい素膜７を除去する〔同図（ｅ）〕。この後、ｎエミッタ領域８上にエミッタ電極、ｐ型エピタキシャル層３の表面上にベース電極、ｎ型サブストレート１の裏面にコレクタ電極を設ければ、ｎｐｎトランジスタが完成する。
【０００８】
酸素遮蔽性の膜としては、上記の窒化けい素膜の他に、多結晶シリコン等がある。なお、窒化けい素膜７は、減圧ＣＶＤ法やプラズマＣＶＤ法によっても形成できる。
【０００９】
【発明の効果】
本発明によれば、ＳｉＣ半導体基板表面にイオン注入後、高周波スパッタリング法他の方法で、窒化けい素膜等の酸素遮蔽性の膜を成膜してから高温熱処理を行う。これにより、不活性ガス中の酸素によるＳｉＣ半導体表面の酸化が抑えられ、なおかつ、イオン注入時の結晶欠陥を回復させられる充分な高温熱処理を行うことができて、拡散領域が確実に形成できる。
【図面の簡単な説明】
【図１】（ａ）ないし（ｅ）は本発明の製造方法にかかるＳｉＣ半導体素子の工程順に示した断面図
【符号の説明】
１ ｎ型サブストレート
２ ｎ型エピタキシャル層
３ ｐ型エピタキシャル層
４ エピタキシャルウェハ
５ フォトレジスト
６ 窒素イオン
７ 窒化けい素膜
８ ｎエミッタ領域[0001]
[Industrial application fields]
The present invention relates to a method for manufacturing a semiconductor element made of silicon carbide (hereinafter referred to as SiC).
[0002]
[Prior art]
With respect to silicon (Si), which is widely used as a semiconductor material, its performance limit is considered, and a semiconductor material that can be used even in a harsh environment is being sought. For example, a wide gap semiconductor such as SiC having a band gap of 3 eV (electron volts) is promising as a next-generation semiconductor material. Compared with Si, SiC has excellent characteristics such as three times the thermal conductivity, ten times the maximum electric field strength, and twice the electron drift velocity. Already, it has been reported that a 1.1 kV high voltage Schottky diode has been prototyped taking advantage of the characteristics of SiC [SiC and related wide gap semiconductor study group second lecture proceedings, page 19, 1993 11 Month〕.
[0003]
[Problems to be solved by the invention]
The aforementioned Schottky diode is a semiconductor element formed by epitaxially growing n-type SiC on a SiC substrate and then forming gold (Au) as a Schottky electrode and nickel (Ni) as an ohmic electrode. This manufacturing process did not include a step of forming a diffusion layer by ion implantation. However, when SiC is applied to various semiconductor elements, it is necessary to form a diffusion layer by ion implantation and subsequent heat treatment. Many studies have been made on ion implantation into SiC at academic societies and the like [for example, the second lecture proceedings collection of the SiC and related wide gap semiconductor research group, 27 pages, November 1993]. It is known that crystal defects caused by ion implantation into SiC cannot be recovered by heat treatment at 1100 to 1200 ° C., which is similar to that of Si, and heat treatment at 1300 to 1400 ° C. higher than Si is required. On the other hand, the ion-implanted layer has a much faster oxidation rate than the non-implanted layer [Japanese Journal of Applied Physics, 33, L1121, 1994]. In general, it is known that the oxidation rate of a layer having many crystal defects is high, and it is considered that there are many crystal defects generated by ion implantation.
[0004]
Usually, the high-temperature heat treatment after ion implantation is performed in an inert gas atmosphere. At this time, there is a concern that the surface layer of the ion implantation region is oxidized by a small amount of oxygen contained in the inert gas atmosphere. In particular, when the ion implantation region is very shallow, the implantation region is entirely oxidized and an impurity diffusion region cannot be formed.
In view of the above problems, an object of the present invention is to provide a SiC semiconductor capable of performing heat treatment without being affected by oxygen in an inert gas atmosphere and sufficiently recovering crystal defects during heat treatment after ion implantation. The object is to provide a method for manufacturing an element.
[0005]
[Means for Solving the Problems]
In order to achieve the above object, a method for manufacturing an SiC semiconductor device according to the present invention includes forming an oxygen-shielding film on an ion-implanted surface after ion implantation into a silicon carbide semiconductor substrate, and a high temperature of 1300 ° C. or higher. Heat treatment is to be performed.
Further, after ion implantation into the silicon carbide semiconductor substrate, an oxygen shielding film is formed on the ion implanted surface, and high-temperature heat treatment at 1300 ° C. to 1400 ° C. is performed.
In addition, after ion implantation into the silicon carbide semiconductor substrate, an oxygen shielding film is formed on the ion-implanted surface, and high-temperature heat treatment at 1300 ° C. or higher is performed so as to recover crystal defects generated during the ion implantation. To do.
Further, a silicon nitride film is formed as an oxygen shielding film.
[0006]
[Action]
By taking the above measures and forming an oxygen shielding film such as a nitride film on the ion-implanted surface after the ion implantation, it is possible to perform a high-temperature heat treatment sufficient to recover crystal defects. Prevents oxidation by trace oxygen in the atmosphere.
As a method for forming the silicon nitride film, dense film formation is possible by any of a high-frequency sputtering method, a low pressure CVD method, and a plasma CVD method.
[0007]
【Example】
Examples of the present invention will be described below with reference to the drawings.
FIGS. 1A to 1E are cross-sectional views showing the order of steps of a SiC semiconductor device according to the manufacturing method of the present invention, taking an npn transistor as an example. A SiC epitaxial wafer 4 in which an n-type epitaxial layer 2 and a p-type epitaxial layer 3 are epitaxially grown on a 6H—SiC n-type substrate 1 is used [FIG. 1A]. The n-type epitaxial layer 2 is non-doped and has a thickness of 5 μm, and the p-type epitaxial layer 3 has an impurity concentration of 9.0 × 10 16 cm −3 and a thickness of 1.2 μm. Photoresist 5 is applied to this SiC epitaxial wafer 4, exposure and development are performed, an ion implantation window is opened, and nitrogen ions 6 are implanted [FIG. Here, nitrogen (N + ) was used as the ion species. The implantation conditions are an acceleration voltage of 35 keV, a dose of 1.0 × 10 15 cm −2 , 70 keV of 1.0 × 10 15 cm −2 , 150 keV of 4.0 × 10 15 cm −2 , and 180 keV of 2. Multiple energy ion implantation of 0 × 10 15 cm −2 was performed. Nitrogen is a donor-forming impurity that forms an n-type region when ion-implanted into SiC. The portion where the nitrogen ions are implanted can be used as an n source region. The reason why the multiple energy ion implantation is performed is to obtain a nitrogen concentration of 10 19 cm −3 or more uniformly at a distance of 0.3 to 0.4 μm in the depth direction from the surface. After the ion implantation, the photoresist 5 is ashed by oxygen plasma and then removed through a stripping solution. Next, a silicon nitride film 7 is formed by high frequency sputtering [FIG. For high-frequency sputtering, a target prepared by a reactive sintering method was used. The composition of the target is that having a silicon: nitrogen ratio of 3: 4. As a gas for hitting the target, a mixed gas of argon: nitrogen = 1: 1 was used. The silicon nitride film 7 formed by the high frequency sputtering method has a dense film quality because the ratio of hydrogen (H) contained in the film is small. Therefore, it functions as a surface protective film even in a high temperature environment. Subsequently, heat treatment is performed at 1300 ° C. for 5 hours in a nitrogen atmosphere [(d)]. At this time, crystal defects generated at the time of ion implantation are almost completely recovered. Further, a part of the silicon nitride film 7 is oxidized by the trace amount of oxygen in the nitrogen atmosphere, and an oxide film of about 30 nm is formed on the silicon nitride film 7. Further, the nitrogen ion-implanted during the heat treatment is ionized (activation rate: several%), and the n emitter region 8 is formed as a donor. Thereafter, the silicon nitride film 7 is removed using a diluted hydrofluoric acid solution in which hydrofluoric acid (HF) is mixed at a ratio of HF: water = 1: 1 [(e) in FIG. Thereafter, if an emitter electrode is provided on the n emitter region 8, a base electrode is provided on the surface of the p-type epitaxial layer 3, and a collector electrode is provided on the back surface of the n-type substrate 1, an npn transistor is completed.
[0008]
Examples of the oxygen shielding film include polycrystalline silicon in addition to the above silicon nitride film. The silicon nitride film 7 can also be formed by a low pressure CVD method or a plasma CVD method.
[0009]
【The invention's effect】
According to the present invention, after ion implantation into the SiC semiconductor substrate surface, an oxygen shielding film such as a silicon nitride film is formed by a high frequency sputtering method or the like, and then a high temperature heat treatment is performed. Thereby, oxidation of the SiC semiconductor surface by oxygen in the inert gas can be suppressed, and sufficient high-temperature heat treatment that can recover crystal defects during ion implantation can be performed, and a diffusion region can be formed reliably.
[Brief description of the drawings]
FIGS. 1A to 1E are cross-sectional views showing the order of steps of a SiC semiconductor device according to a manufacturing method of the present invention.
1 n-type substrate 2 n-type epitaxial layer 3 p-type epitaxial layer 4 epitaxial wafer 5 photoresist 6 nitrogen ion 7 silicon nitride film 8 n emitter region
Claims (4)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23979894A JP3721588B2 (en) | 1994-10-04 | 1994-10-04 | Method for manufacturing silicon carbide semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23979894A JP3721588B2 (en) | 1994-10-04 | 1994-10-04 | Method for manufacturing silicon carbide semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH08107223A JPH08107223A (en) | 1996-04-23 |
| JP3721588B2 true JP3721588B2 (en) | 2005-11-30 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23979894A Expired - Lifetime JP3721588B2 (en) | 1994-10-04 | 1994-10-04 | Method for manufacturing silicon carbide semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3721588B2 (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5952679A (en) * | 1996-10-17 | 1999-09-14 | Denso Corporation | Semiconductor substrate and method for straightening warp of semiconductor substrate |
| JP3956487B2 (en) * | 1998-06-22 | 2007-08-08 | 富士電機デバイステクノロジー株式会社 | Method for manufacturing silicon carbide semiconductor device |
| JP4961633B2 (en) * | 2001-04-18 | 2012-06-27 | 株式会社デンソー | Method for manufacturing silicon carbide semiconductor device |
| KR100446954B1 (en) * | 2001-09-22 | 2004-09-01 | 한국전기연구원 | Fabrication method of silicon carbide semiconducting devices |
| US7462540B2 (en) * | 2004-02-06 | 2008-12-09 | Panasonic Corporation | Silicon carbide semiconductor device and process for producing the same |
| JP2008112834A (en) | 2006-10-30 | 2008-05-15 | Sumitomo Electric Ind Ltd | Manufacturing method of silicon carbide semiconductor device |
| CN115513172B (en) * | 2022-11-22 | 2023-04-28 | 广东芯粤能半导体有限公司 | Semiconductor structure and preparation method thereof |
-
1994
- 1994-10-04 JP JP23979894A patent/JP3721588B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH08107223A (en) | 1996-04-23 |
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