JP3686581B2 - Semiconductor integrated circuit - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a semiconductor integrated circuit with high integration density and reduced current consumption during standby.
[0002]
[Prior art]
A CMOS circuit is well known as a semiconductor integrated circuit that consumes very little power during standby. When the input is high level, the p-channel MOS transistor is off and the n-channel MOS transistor is on. When the discharge of the capacitive load of the output is completed, the n-channel MOS transistor is turned off. In this state, power consumption is ignored. it can. When the input is at a low level, the p-channel MOS transistor is on and the n-channel MOS transistor is off. When the charging of the output capacitive load is completed, the p-channel MOS transistor is turned off. Can be ignored
On the other hand, a miniaturized MOS transistor is used for the internal circuit in the chip, and an internal power supply voltage lower than the external power supply voltage is applied to the internal voltage drop circuit (ON A highly integrated semiconductor integrated circuit which is generated by a chip voltage limiter and supplies this internal power supply voltage to the internal circuit is conventionally described in Japanese Patent Application Laid-Open No. 57-172761.
[0003]
On the other hand, Japanese Patent Laid-Open No. Sho 63-140486 discloses a current mirror circuit between an external power source and an internal circuit in order to increase the rising speed of the transient current of the internal circuit immediately after the power is turned on, while suppressing the peak value of the transient current. Is connected to limit the current supplied to the internal circuit and clamp the rise of the supply voltage to the internal circuit by a predetermined value by feedback.
[0004]
[Problems to be solved by the invention]
However, recent progress in microfabrication technology used in semiconductor integrated circuits is remarkable, and the process size is approaching 0.1 μm. Compared with a MOS transistor with a channel length of 1 μm, a MOS transistor with a channel length of around 0.1 μm has a lower threshold voltage and a drain current of 0 even when the gate-source voltage is lower than the threshold voltage. Don't be. The leakage current in the region where the gate-source voltage is equal to or lower than the threshold voltage is called a subthreshold current and is exponentially proportional to the gate-source voltage. On the contrary, the threshold voltage is defined in a region where the drain current is exponentially proportional to the gate-source voltage. For example, when the gate width is 10 μm, the drain current of 10 nA flows through the gate-source. Voltage. This increase in subthreshold current caused by miniaturization has the problem that it goes against the demand for lower power consumption of integrated circuits. In particular, power consumption in a non-operating state of a semiconductor integrated circuit using a miniaturized MOS transistor is determined by this subthreshold current, and it is necessary to suppress this subthreshold current in order to achieve low power consumption. .
[0005]
By the way, the word driver for driving the word line of the semiconductor memory is constituted by a CMOS circuit, thereby realizing low power consumption of the semiconductor memory. However, if the MOS transistor of the word driver CMOS circuit is miniaturized, the following problems occur. That is, since the parasitic capacitance of the word line is large, it is necessary to use a MOS transistor having a large gate width as a driving transistor for the word driver. Therefore, the total gate width of the word driver reaches about half of the total gate width of the entire DRAM chip. However, since the subthreshold current increases in proportion to the gate width, if a MOS transistor having a large gate width is used as the driving transistor of the word driver, there arises a problem that power consumption during standby of the word driver CMOS circuit increases.
[0006]
That is, since a semiconductor memory generally uses a large number of word drivers, it is necessary to suppress the subthreshold current of the driving MOS transistor of the word driver constituted by a CMOS circuit. For example, in the case of a 4 Mb DRAM, a period of about 15.9 msec (actually 99% or more) in the refresh period of 16 msec is a period in which all word lines are in a non-selected state. Since the sub-threshold current of the transistor flows, the power consumption in the non-selected state is determined by the sub-threshold current of the driving MOS transistor miniaturized by the word driver. Such a problem becomes a serious problem particularly in the case of a battery-operated semiconductor integrated circuit.
[0007]
On the other hand, when the voltage drop circuit technique disclosed in Japanese Patent Laid-Open No. 57-172761 is applied to a semiconductor memory such as the above DRAM, the internal power supply voltage of the internal circuit including the MOS transistor having a large subthreshold current is an on-chip voltage. Supplied from the output of the limiter. However, in this case, since the on-chip voltage limiter does not have a current limiting function with respect to its output current, it is not possible to reduce the subthreshold current, which has been a problem described above.
[0008]
On the other hand, if the current mirror circuit technique disclosed in Japanese Patent Laid-Open No. 63-140486 is applied to a semiconductor memory such as a DRAM, the internal power supply voltage and the internal power supply current of the internal circuit including the MOS transistor having a large subthreshold current are described. Is supplied from the output transistor of the current mirror circuit. However, in this case, although the current mirror circuit has a current limiting function that limits the peak value of the transient current of the internal circuit to a predetermined value or less, the subthreshold current corresponding to the predetermined value is higher than the above-described subthreshold current. This is a much larger value, and again, the subthreshold current, which has been a problem in the above, cannot be reduced.
[0009]
Accordingly, an object of the present invention is to provide a semiconductor integrated circuit in which power consumption during standby is not determined by a large subthreshold current accompanying miniaturization even when a miniaturized CMOS circuit is used.
[0010]
[Means for Solving the Problems]
In order to achieve such an object, a switching MOS transistor is provided between a first power supply terminal common to a plurality of CMOS circuits and an external power supply terminal or an internal power supply terminal which is an output of an on-chip voltage limiter. When a control signal having a voltage amplitude smaller than the absolute value of the threshold voltage is applied between the gate and source of the transistor and the first power supply terminal and the second power supply terminal of the plurality of CMOS circuits are short-circuited, The first subthreshold current flowing from the power supply terminal or the internal power supply terminal which is the output of the on-chip voltage limiter through the source-drain path of the switching MOS transistor is electrically connected to the source included in the plurality of CMOS circuits. Multiple switching MOS transistors and the same conductivity type channel connected to one power supply terminal When a signal having a voltage amplitude smaller than the absolute value of the threshold voltage is applied between the gate and source of the MOS transistor and the source and drain of the switching MOS transistor are short-circuited, the external power supply terminal or on-chip voltage The device parameter of the switching MOS transistor is set so as to be smaller than the second subthreshold current flowing from the internal power supply terminal which is the output of the limiter through the source-drain paths of the MOS transistors of the plurality of CMOS circuits.
[0011]
In the standby state, the currents of the off-state CMOS circuits are limited to the subthreshold currents of the off-state switching MOS transistors.
[0012]
DETAILED DESCRIPTION OF THE INVENTION
The present invention will be specifically described with reference to examples. Unless otherwise specified, the symbol representing the terminal name also serves as the wiring name and signal name, and in the case of a power supply, also serves as the voltage value.
[0013]
FIG. 1 is a diagram showing a first embodiment of the present invention. Ci (i = 1 to n) is a logic circuit or driver configured using CMOS transistors, but paying attention to driving of the output terminal Oi, here, a simple CMOS inverter is taken as an example. Ii is the input terminal. VS and VC are power lines from an internal power source generated by an external voltage source or an internal voltage conversion circuit such as an internal voltage down converter or an internal voltage booster circuit. The external power supply voltage is, for example, about 1.5 to 3.6V. VC is set to 1.5 to 2.5 V, for example. VS is usually 0V. A switch circuit S1 is inserted between Ci and VC. T1 is a control terminal of this switch circuit. For example, a MOS transistor or a bipolar transistor is used for the switch circuit S1. N1 is a first power supply terminal of the CMOS inverter group. N2 is a second power supply terminal of the CMOS inverter group.
[0014]
The operation of this circuit will be described with reference to FIG. Here, consider the case where only one circuit (here, C1) operates during operation. That is, the current supplied by the switch S1 during operation is only one circuit of Ci (current consumption at C1 here). In FIG. 2, S1 is turned on when T1 is at a high level, and S1 is turned off when T1 is at a low level.
[0015]
At the first standby, all the inputs Ii of Ci are at the high level VC, and all the outputs Oi are at the low level VS. At this time, the p-channel MOS transistor is normally off, and the n-channel MOS transistor is normally on. However, an off-state subthreshold current becomes a problem due to miniaturization. That is, the subthreshold current that becomes a problem when there is no switch S1 is a current that flows from VC to VS through an off p-channel MOS transistor and an on-n channel MOS transistor when the output Oi is at a low level. . In this embodiment, T1 is set to a low level during standby, and the switch S1 is turned off. However, even if the switch S1 is turned off, the leakage current of the switch S1 cannot be ignored. However, the leakage current of the switch S1 is set smaller than the above-described subthreshold current. Therefore, at this time, the maximum current from VC to Ci is the leakage current of the switch S1. As a result, even if a MOS transistor having a low threshold voltage is used for Ci for low voltage operation, the current flowing through Ci is determined not by the subthreshold current but by the leakage current of the small switch S1. The Therefore, current consumption during standby is small.
[0016]
Next, at the time of operation, T1 becomes high level, S1 is turned on, and S1 enters a state of supplying a current necessary for charging the output O1 of C1. Here, the input I1 changes to the low level VS, and the output O1 rises to the voltage VC due to the current from the power supply VC. Thereafter, the force I1 becomes a high level VC, and the output O1 becomes a low level VS. When the above operations are completed, T1 becomes low level again in the standby state, and S1 is turned off.
[0017]
The switch S1 can be formed of a p-channel MOS transistor or a pnp bipolar transistor.
[0018]
FIG. 3 is a diagram showing a second embodiment of the present invention. 1 differs from FIG. 1 in that a switch S2 is provided between VS and Ci instead of providing a switch S1 between VC and Ci, and that the first power supply terminal N1 and the second power supply terminal N2 are different from each other. This is the opposite point. Others are the same as FIG. The operation of this circuit is shown in FIG.
[0019]
In the circuit of FIG. 3, the leakage current of the switch S2 is set smaller than the subthreshold current of the n-channel MOS transistor of the circuit Ci in which the low potential is applied to the input Ii. Therefore, at this time, the maximum current from Ci to VS is the leakage current of the switch S2. As a result, even if a MOS transistor having a low threshold voltage is used for Ci for low voltage operation, the current flowing through Ci is determined not by the subthreshold current but by the leakage current of the small switch S2. The Therefore, current consumption during standby is small.
[0020]
The switch S2 can be formed of an n-channel MOS transistor or an npn bipolar transistor.
[0021]
FIG. 5 is a diagram showing a third embodiment of the present invention. In this embodiment, the switch S1 of the first embodiment shown in FIG. 1 is specifically constituted by a p-channel MOS transistor. The current drive capability of the p-channel MOS transistor S1 is set in consideration of the number of circuits Ci that charge the output Oi in response to the low potential input Ii. On the other hand, in order to reduce the current consumption during standby, it is necessary to reduce the leakage current of the switch S1 as described above. For this purpose, it is necessary to set the device parameters of the p-channel MOS transistor of the switch S1. For example, the gate width of the p-channel MOS transistor of the switch S1 is smaller than the sum of the gate widths of all the p-channel MOS transistors of the circuits C1, C2,... Cn, and larger than the gate width of the p-channel MOS transistor of one circuit Ci. Is set. In order to reduce the leakage current, the threshold voltage of the p-channel MOS transistor of the switch S1 can be increased, the gate length can be increased, or the gate insulating film thickness can be increased. As a result, current consumption during standby can be reduced.
[0022]
The operation of this circuit will be described with reference to FIG. During operation, only one circuit C1 outputs a high potential.
[0023]
First, at the time of the first standby, as in the previous embodiment, all the input Ii of Ci are set to the high level VC, and all the outputs Oi are at the low potential VS. Further, since the subthreshold current flowing through the switch element S1 is smaller than the sum of the subthreshold currents of C1, C2,... Cn, the potential of the common power supply terminal N gradually decreases. Then, for example, when considering the p-channel MOS transistor of the circuit C1, the gate voltage is VC, but the source voltage is lower than VC. That is, since the p-channel MOS transistor is further turned off, the subthreshold current is greatly reduced. The gate-source voltage dependence of the subthreshold current is about DECADE / 100 mV. Therefore, if the voltage drops by 0.2 V, the subthreshold current becomes 1/100. Therefore, if the standby period is increased to some extent, the current consumption can be reduced to a negligible level due to the potential drop of the terminal N.
[0024]
Since the p-channel MOS transistor S1 is turned on during operation, the difference from the previous embodiment is that T1 becomes a low level VS, and the rest is the same as the previous embodiment. Note that the switch S1 can be formed of a pnp bipolar transistor.
[0025]
In the case of a bipolar transistor, between at least one power supply terminal of the plurality of CMOS circuits having the first and second power supply terminals and the internal power supply terminal that is the output of the external power supply terminal or the on-chip voltage limiter. An npn or pnp switching bipolar transistor is provided. The leakage current when the switching bipolar transistor is off when the first and second power supply terminals of the plurality of CMOS circuits are short-circuited, and conversely the plurality of CMOS when the switching bipolar transistor is short-circuited (not short-circuited). The device parameter of the switching bipolar transistor is set so as to be smaller than the subthreshold current in the circuit off state. The device parameter is, for example, the emitter width.
[0026]
FIG. 7 is a diagram showing a fourth embodiment of the present invention. In this embodiment, the potential of the first power supply terminal N1 is maintained at a predetermined potential between VC and VS between the power supplies VC and Ci in parallel with the switch S1 of the third embodiment shown in FIG. It has a voltage clamp circuit L.
[0027]
For example, the voltage clamp circuit L is composed of an n-channel MOS transistor of source follower operation in which the drain is set to VC, the gate is set to a predetermined potential, and the source is connected to the terminal N1. In this embodiment, this voltage clamp circuit is realized by a diode-connected n-channel MOS transistor whose gate and drain are short-circuited.
[0028]
The features and operation of this circuit will be described with reference to FIG. The initial state is the same as that described with reference to FIGS. At this time, as shown in FIG. 8, the potential of the common power supply terminal N1 of Ci differs in the standby state when the voltage clamp circuit L is present (solid line) and when it is not present (broken line). If an extremely long standby time continues, the potential at the terminal N1 drops to VS in the worst case due to the subthreshold current flowing through Ci and other leakage currents when there is no voltage clamp circuit L. For this reason, in order to shift from standby to operation, the common power supply terminal N1 must first be charged, so that there is a delay in shifting to the operating state until this charging is completed. On the other hand, when the threshold voltage of the n-channel MOS transistor constituting the voltage clamp circuit L is VT, when the voltage clamp circuit L is present, the potential of the common power supply terminal N is only up to VC−VT. It does not decline. Therefore, the transition to the operation state is completed in a short time. Note that the level of the clamp potential VC-VT of N1 is set so that the sub-threshold current of Ci at the time when VC is applied to the input becomes so small that it can be ignored as in the previous embodiment. For example, when VT is 0.2 V and the gate-source voltage dependency of the subthreshold current is DECADE / 100 mV, the subthreshold current can be reduced to 1/100 or less.
[0029]
The present invention has a case where a semiconductor integrated circuit including a large number of similar CMOS circuits has an operation mode in which the semiconductor integrated circuit is in a standby state (a state in which valid data cannot be guaranteed to be output from an output in a state where a power supply voltage is not substantially supplied). This is suitable for reducing the current consumption in the standby state.
[0030]
A semiconductor memory, for example, a dynamic random access memory (DRAM), a static random access memory (SRAM), or a nonvolatile memory such as an EEPROM has a word decoder, a word driver, a Y-system decoder, and a Y-system driver. Therefore, long-term battery operation can be ensured if the current consumption of such a decoder or driver is greatly reduced in a standby state of the semiconductor memory where it cannot be guaranteed that valid data is output from the output.
[0031]
By applying the CMOS circuit of the present invention to such a decoder or driver, current consumption can be greatly reduced and long-term battery operation can be guaranteed.
[0032]
FIG. 9 is a diagram showing an example in which the present invention is applied to a word driver / decoder of a dynamic random access memory. WD1 to WD8 are word drivers corresponding to Ci in FIG. 1, and a switch for supplying current from the power supply VCH to this is S11. XD1 is a decoder, which also corresponds to Ci in FIG. 1, and a switch for supplying current from the power supply VCL to SD1 is S12. The power supply voltage VCH for the word drivers WD1 to WD8 is set to a high voltage necessary for sufficiently taking a storage voltage of a memory cell (not shown). For example, if the storage voltage of the memory cell is 1.5V, VCH is set to 2.5V. Since the power supply voltage VCL for the decoder XD1 does not need to drive the memory cell directly, it is set to a voltage as low as possible so as to reduce the current consumption and the speed does not deteriorate so much. For example, it is set to 1.5V. For this reason, VCH is set higher than VCL. VCH can also be obtained, for example, by boosting the external power supply voltage. The circuit block XB1 is composed of WD1 to WD8 and XD1, and there are n such circuit blocks as XB1 to XBn. W11 to Wn8 are word lines. In WD1, the pMOS MW1 and the nMOS MW2 are CMOS inverters for driving the word line W11. XDPH is a precharge signal. As shown in Japanese Patent Laid-Open No. 62-178013, the basic operation of this WD1 is to turn on PMOSMP1 with XDPH while the nMOS MS1 is off, precharge the terminal N3 to VCH, and lower the W11 output from the CMOS inverter. It is set to VS, and then the nMOS MS1 is selectively turned on to lower the potential of N3 and invert the CMOS inverter. The pMOS MF1 applies weak feedback from the output of the CMOS inverter to the input for preventing malfunction. MS1 is controlled by Xm and an output N2 of a decoder described later. Conventionally, in such a word driver, the pMOS MW1 is directly connected to the power supply VCH together with other word drivers. This MW1 generally has a large gate width since the load on the word line is large. For this reason, the total gate width of all the word drivers occupies most of the total gate width of the logic circuits of the entire chip. Conventionally, such a large gate width MOS is connected to the power supply VCH. For this reason, if the power supply voltage is lowered in accordance with the decrease in the breakdown voltage between the source and drain of the MOS due to the miniaturization of processing technology, and the threshold voltage is lowered to maintain high-speed operation under this power supply voltage, the subthreshold current Had the problem of increasing. This increases the standby current, and even if the battery can be driven by lowering the voltage, it becomes an obstacle in terms of current consumption. In the present invention, the switch S11 is provided between the power source VCH of the word driver and a large number of word drivers. A number of word drivers are connected to the output VCHL of the switch S11. The switch S11 is composed of a pMOS, and the gate width of the pMOS only needs to be small if it can supply current to the word driver operating at a time. Since this pMOS is connected to VCH, the subthreshold current can be reduced. This solves the conventional problem. For example, if the gate width of MW1 is 20 μm and one S11 is provided for every 512 word drivers, the gate width of the pMOS controlled by T11 in this S11 may be 200 μm. The threshold voltage of the pMOS is set to an absolute value higher than MW1, for example, 0.1V. As a result, the subthreshold current can be reduced by three digits.
[0033]
The configuration of the decoder XD1 is the same. The only difference from the word driver is that a two-stage nMOS MS21 and MS22 are arranged in place of the word driver MS1. MD1 and MD2 are CMOS inverters for driving the decoder output terminal N2, MP2 is a precharge PMOS, XDP is a precharge signal, and MF2 gives a weak feedback from the output of the CMOS inverter to the input. pMOS. MS21 and MS22 are controlled by Xi, Xj and Xk. Conventionally, even in such a decoder, MD1 is directly connected to the power supply VCL. For this reason, a large number of decoder MOSs are connected to VCL, and when the threshold voltage is reduced in accordance with the progress of miniaturization of the processing technique and the decrease of the power supply voltage, a large subthreshold current flows. Using the present invention, a switch S12 is provided between the power supply and a number of decoders, and this output VCLL is connected to the decoder. In this way, the gate width of the pMOS that constitutes this switch only needs to be able to supply current to a small number of operating decoders, and can be made small. Since this pMOS is connected to VCL, the subthreshold current can be reduced.
[0034]
Next, the operation of this circuit will be described with reference to FIG. Although not shown in FIG. 9, / RAS is a signal which is applied to the chip and controls whether or not to operate this word driver / decoder group. From this signal and a so-called address signal that designates which word line to be applied from the outside of the chip is selected, a signal necessary for operating the circuit of FIG. 9 by a circuit in the chip not shown in FIG. 9 is generated. To do. Initially, / RAS is high and the chip is in a standby state. At this time, since Xi is the high level VCL and Xj and Xk are the low level VS, MS21 and MS22 are turned off and the decoder is in a non-selected state. Furthermore, since XDP is at a low level VS, pMOS MP2 is turned on, and the input N1 of the CMOS inverter of the decoder is precharged to VCL. Therefore, the output N2 of the decoder is at the low level VS. On the other hand, in the word driver, since Xm is the high level VCL and N2 is the low level VS as described above, the nMOS MS1 is off. Since XDPH is at the low level VS, the pMOS MP1 is turned on and N3 is precharged to the high level VCH. Therefore, the word line W11 is at the low level. The same applies to other word drivers / decoders, and all word lines are at a low level VS. Next, when the operating state is entered, / RAS is at a low level, the precharge signal XDP is at a high level VCL, and XDPH is at a high level VCH. T11 and T12 also become low level VS, and switches S11 and S12 are turned on. Further, Xi and Xm become low level VS, and Xj and Xk become high level VCL. As a result, since M21 and M22 are turned on, N1 is discharged toward Xi to the low level VS. For this reason, since N2 becomes the high level VCL and Xm becomes the low level VS, MS1 is turned on, and N3 is discharged toward Xi up to the low level VS. As a result, W11 becomes a high level, and the memory cell connected thereto is selected. After this, when / RAS changes to high level again, Xi, Xj, Xk, and Xm return to the standby state, and XDP and XDPH also return to the initial state. It will be precharged for operation. Although FIG. 9 shows the case of a word driver / decoder, this can also be applied to a Y driver / decoder. In this case, since it is not necessary to directly drive the memory cell, in general, VCH in FIG. 9 may be set to the same potential as VCL.
[0035]
FIG. 11 shows an example of the control circuit of the switches S11 and S12 in FIG. MA is an input signal of this control circuit. In FIG. 11, T11 is provided for S11 and T12 is provided for S12. In this control circuit, S11 and S12 are controlled by one output signal T. The operation of this circuit will be described with reference to FIG. In a non-selected state where / RAS is at a high level, since MA is at a low level VS, nMOS MG2 is off. Also, M1 is at the high level VCL due to the CMOS inverter. For this reason, in the level conversion circuit that constitutes the flip-flop and the power supply is connected to VCH, M2 is at the low level VS and pMOS MG1 is on. Therefore, T is a high level VCH, and the switches S11 and S12 are off. Next, when / RAS is at a high level and enters an operating state, MA becomes a high level VCL and M1 becomes a low level VS. As a result, the NOR flip-flop is inverted and M2 becomes the high level VCH. Here, since MA is input to the gate of nMOSMG2, nMOSMG2 is turned on when MA becomes high level. Since M2 becomes high level by the above-described operation, pMOS MG1 is also turned off with a delay. However, by setting the gate width of MG2 sufficiently larger than MG1, T is lowered by changing MA to high level VCL. Level VS can be set. Since it is necessary for the high-speed operation to turn on the switches S11 and S12 as soon as possible when operating, such a circuit configuration is preferable. When / RAS goes high and returns to the non-selected state, MA goes low first and MG2 is turned off. Then, the flip-flop operates to turn on MG1, and set T to a high level. As a result, the switches S11 and S12 are turned off.
[0036]
FIG. 13 is a diagram showing a configuration of a data processing system using the semiconductor memory of the present invention for the storage device M. Arrows indicate signal flow. M is a DRAM using the present invention, CPU is a processor for controlling the entire system, RAG is a refresh address generator, TC is a control signal generator, and SLCT is an address signal and RAG sent from the CPU. A select device for switching a refresh address signal to be sent, and PFY indicates another device in the system (for example, an external storage device, a display device, a numerical operation device, etc.). The PFY may be connected to another information processing apparatus through a communication line.
[0037]
DATA is data communicated between the CPU and M, Aic is an address signal generated by the CPU, Air is a refresh address signal generated by RAG, Ai is an address signal selected by SLCT and sent to M, ST is a status signal sent from the CPU to the RAG, BS is a busy signal from the TC to the CPU, SE is a signal for starting the SLCT sent from the TC, and / RAS and / CAS are DRAMs using the present invention. It is a signal to start. SG collectively represents the exchange of signals between the CPU and other devices in the system. As M, SRAM, EEPROM, etc. can be considered. At this time, of course, there are start signals and control signals corresponding to the signals.
[0038]
In the embodiment of FIG. 13, the / RAS signal and the / CAS signal are set to the high level, and the DRAM storage device M shifts to the standby state with an ultra-low current consumption as described in the previous embodiment. At this time, the CPU can also enter a low power consumption standby state and the other peripheral devices can also enter a low power consumption standby state by a sleep command.
[0039]
In the semiconductor integrated circuit using the present invention, the current consumption can be made smaller than the subthreshold current of the MOS transistor having a small threshold voltage under a low power supply voltage suitable for battery driving. Therefore, it is possible to realize a semiconductor integrated circuit that is high speed, low voltage, and has a small standby current.
[0040]
【The invention's effect】
The device parameter of the switch transistor is set so that the leakage current of the switch transistor constituting the power switch that is turned off during standby is smaller than the sum of the sub-threshold currents of the p-channel or n-channel MOS of the plurality of CMOS circuits. Is set. Therefore, the current flowing through the plurality of CMOS circuits during standby is set not by the subthreshold current of the plurality of CMOS circuits but by a small leakage current of the switch transistor. Thus, even when the CMOS circuit is miniaturized and the subthreshold current increases, the current consumption during standby can be reduced.
[Brief description of the drawings]
FIG. 1 is a diagram showing a first embodiment.
FIG. 2 is a diagram illustrating the operation of the first embodiment.
FIG. 3 is a diagram showing a second embodiment.
FIG. 4 is a diagram illustrating the operation of the second embodiment.
FIG. 5 is a diagram showing a third embodiment.
FIG. 6 is a diagram illustrating the operation of the third embodiment.
FIG. 7 is a diagram showing a fourth embodiment.
FIG. 8 is a diagram illustrating the operation of the fourth embodiment.
FIG. 9 is a diagram showing application of the present invention to a word driver / decoder.
10 is a diagram illustrating the operation of the circuit of FIG. 9;
FIG. 11 is a diagram illustrating an example of a control circuit.
12 is a diagram illustrating an operation of the circuit of FIG.
FIG. 13 is a diagram showing a system configuration using the present invention.
[Explanation of symbols]
S, S1, S2, S11, S12 ... switch, T, T1, T2, T11, T12 ... switch control terminal, Ci ... many circuits that operate only a few at a time, N1, N2 ... power supply terminals, VC ... high potential Side power supply, VS ... low potential side power supply, I ... input, O ... output, VCH ... high potential side power supply of word driver, VCL ... high potential side power supply of decoder, WD1 to WD8 ... word driver, XD1 ... decoder, XB1 XBn: Word driver / decoder, W11 to Wn8: Word line, Xi, Xj, Xk, Xl: Word driver / decoder selection signal, MA: Control circuit input signal, M: Memory, DRAM, CPU: System control processor, SLT ... Address select device, RAG ... Refresh address generator, TC ... Control signal generator, PFY ... Other devices in the system, DAT ... data signal, Aic, Air, Ai ... address signal, ST ... status signal, BS ... busy signal, SE ... start-up signal, / RAS, / CAS ... DRAM of the start-up signal.

Claims (11)

A plurality of word lines to which the memory cells are connected;
A plurality of word drivers connected to each of the plurality of word lines to drive the word lines;
A first operating potential point;
A second operating potential point;
A first potential point common to the plurality of word drivers;
A second potential point electrically connected to the second operating potential point and common to the plurality of word drivers;
A first conductivity type first MOS transistor having a source / drain path between the first operating potential point and the first potential point, and having a source connected to the first operating potential point;
Each of the plurality of word drivers has a source / drain path between the first potential point and the second potential point, and a first conductivity type second MOS having a source connected to the first potential point. A second conductive type third MOS transistor connected in series with the second MOS transistor and having a source / drain path between the first potential point and the second potential point; The gate and the gate of the third MOS transistor are connected in common, and are connected to one of the plurality of word lines at a connection point between the second MOS transistor and the third MOS transistor,
The first MOS transistor, the second MOS transistor, and the third MOS transistor are MOS transistors through which a subthreshold current flows in an off state,
Applying a control signal to the gate of the first MOS transistor;
It is turned on to the first 1MOS transistors by the control signal to the first state, through the source-drain path of the ON state of the first 2MOS transistor capacitor between the first potential point and said second potential point Allow current to flow,
By setting the control signal to the second state, the first MOS transistor is turned off, and the source and drain paths of the second MOS transistor in the off state are interposed between the first potential point and the second potential point. Limit the sub-threshold current flowing,
The voltage between the gate and source of the second MOS transistor when the control signal is in the second state is opposite in polarity to the voltage between the gate and source of the second MOS transistor when the second MOS transistor is in the on state. A semiconductor memory device. In claim 1,
The semiconductor memory device in which the subthreshold current flows due to a processing dimension of the second MOS transistor being in a 0.1 μm region. In claim 1 or 2,
A semiconductor memory device in which a gate width of the first MOS transistor is smaller than a total gate width of the second MOS transistors connected to the first potential point. In any one of Claims 1 thru | or 3,
Both the first MOS transistor and the second MOS transistor are p-channel MOS transistors,
When the control signal is in the second state, the potential at the first potential point is such that the subthreshold current of the first MOS transistor is smaller than the sum of the subthreshold currents of the second MOS transistors of the plurality of word drivers. Decreasing semiconductor memory device. In any one of Claims 1 thru | or 4,
A semiconductor memory device having a voltage clamp circuit in parallel with the first MOS transistor. A plurality of word lines to which the memory cells are connected;
A plurality of word drivers connected to each of the plurality of word lines to drive the word lines;
A first operating potential point;
A second operating potential point;
A first potential point common to the plurality of word drivers;
A second potential point electrically connected to the second operating potential point and common to the plurality of word drivers;
A first conductivity type first MOS transistor having a source / drain path between the first operating potential point and the first potential point, the source of which is connected to the first operating potential point;
A fourth MOS transistor of the first conductivity type;
Each of the plurality of word drivers has a source / drain path between the first potential point and the second potential point, and a first conductivity type second MOS having a source connected to the first potential point. A second conductive type third MOS transistor connected in series with the second MOS transistor and having a source / drain path between the first potential point and the second potential point; The gate and the gate of the third MOS transistor are connected in common, and connected to one of the plurality of word lines at a connection point between the second MOS transistor and the third MOS transistor,
The fourth MOS transistor has a source / drain path between the first operating potential point and a gate of the second MOS transistor and a gate of the third MOS transistor, and a source is connected to the first operating potential point.
The first MOS transistor, the second MOS transistor, and the third MOS transistor are MOS transistors through which a subthreshold current flows in an off state,
Applying a control signal to the gate of the first MOS transistor;
It is turned on to the first 1MOS transistors by the control signal to the first state, through the source-drain path of the ON state of the first 2MOS transistor capacitor between the first potential point and said second potential point Allow current to flow,
By setting the control signal to the second state, the first MOS transistor is turned off, and the source and drain paths of the second MOS transistor in the off state are interposed between the first potential point and the second potential point. A semiconductor memory device that limits a flowing subthreshold current. In claim 6,
When the control signal is in the second state, the fourth MOS transistor is turned on, and the voltage between the gate and the source of the second MOS transistor is the second MOS transistor when the second MOS transistor is in the on state. A semiconductor memory device having a polarity opposite to the gate-source voltage. In claim 6 or 7,
The semiconductor memory device in which the subthreshold current flows due to a processing dimension of the second MOS transistor being in a 0.1 μm region. In any of claims 6 to 8,
A semiconductor memory device in which a gate width of the first MOS transistor is smaller than a total gate width of the second MOS transistors connected to the first potential point. In any one of Claims 6 thru | or 9.
The first MOS transistor, the second MOS transistor, and the fourth MOS transistor are all p-channel MOS transistors,
When the control signal is in the second state, the potential at the first potential point is such that the subthreshold current of the first MOS transistor is smaller than the sum of the subthreshold currents of the second MOS transistors of the plurality of word drivers. Decreasing semiconductor memory device. In any of claims 6 to 10,
A semiconductor memory device having a voltage clamp circuit in parallel with the first MOS transistor.

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