JP3627003B2 - 不揮発性強誘電体メモリ装置及びその製造方法 - Google Patents
不揮発性強誘電体メモリ装置及びその製造方法 Download PDFInfo
- Publication number
- JP3627003B2 JP3627003B2 JP31701398A JP31701398A JP3627003B2 JP 3627003 B2 JP3627003 B2 JP 3627003B2 JP 31701398 A JP31701398 A JP 31701398A JP 31701398 A JP31701398 A JP 31701398A JP 3627003 B2 JP3627003 B2 JP 3627003B2
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- capacitor
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- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 239000010410 layer Substances 0.000 claims description 261
- 239000003990 capacitor Substances 0.000 claims description 189
- 238000000034 method Methods 0.000 claims description 47
- 239000011229 interlayer Substances 0.000 claims description 25
- 239000004065 semiconductor Substances 0.000 claims description 23
- 239000000758 substrate Substances 0.000 claims description 23
- 239000004020 conductor Substances 0.000 claims description 18
- 230000004888 barrier function Effects 0.000 claims description 17
- 238000010438 heat treatment Methods 0.000 claims description 12
- 238000002955 isolation Methods 0.000 claims description 12
- 230000002093 peripheral effect Effects 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 10
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 10
- 229920005591 polysilicon Polymers 0.000 claims description 10
- 238000005530 etching Methods 0.000 claims description 7
- 229920002120 photoresistant polymer Polymers 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 238000009413 insulation Methods 0.000 claims description 4
- 238000000059 patterning Methods 0.000 claims 3
- 239000010408 film Substances 0.000 description 48
- 108010020053 Staphylococcus warneri lipase 2 Proteins 0.000 description 26
- 238000010586 diagram Methods 0.000 description 22
- 239000012535 impurity Substances 0.000 description 15
- 239000000463 material Substances 0.000 description 14
- 239000007769 metal material Substances 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- 230000003647 oxidation Effects 0.000 description 6
- 238000007254 oxidation reaction Methods 0.000 description 6
- 230000010287 polarization Effects 0.000 description 6
- 230000005684 electric field Effects 0.000 description 5
- 238000005192 partition Methods 0.000 description 5
- 238000000206 photolithography Methods 0.000 description 5
- 230000010354 integration Effects 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 239000005380 borophosphosilicate glass Substances 0.000 description 2
- 238000012938 design process Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
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- 238000011161 development Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
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- 229910052710 silicon Inorganic materials 0.000 description 1
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- 230000002269 spontaneous effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Memories (AREA)
- Dram (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR17602/1998 | 1998-05-15 | ||
| KR1019980017602A KR100268888B1 (ko) | 1998-05-15 | 1998-05-15 | 비휘발성 강유전체 메모리 소자 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH11340439A JPH11340439A (ja) | 1999-12-10 |
| JP3627003B2 true JP3627003B2 (ja) | 2005-03-09 |
Family
ID=19537387
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP31701398A Expired - Lifetime JP3627003B2 (ja) | 1998-05-15 | 1998-10-21 | 不揮発性強誘電体メモリ装置及びその製造方法 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP3627003B2 (ko) |
| KR (1) | KR100268888B1 (ko) |
| DE (1) | DE19922437C2 (ko) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100281127B1 (ko) * | 1998-11-19 | 2001-03-02 | 김영환 | Nand형 비휘발성 강유전체 메모리 셀 및 그를 이용한 비휘발성 강유전체 메모리 장치 |
| KR100308125B1 (ko) * | 1999-07-05 | 2001-11-01 | 김영환 | 불휘발성 강유전체 메모리소자 및 그 제조방법 |
| KR100317331B1 (ko) * | 1999-11-11 | 2001-12-24 | 박종섭 | 불휘발성 강유전체 메모리 소자 및 그 제조방법 |
| KR100320438B1 (ko) * | 1999-12-27 | 2002-01-15 | 박종섭 | 불휘발성 강유전체 메모리 소자 및 그 제조방법 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5731608A (en) * | 1997-03-07 | 1998-03-24 | Sharp Microelectronics Technology, Inc. | One transistor ferroelectric memory cell and method of making the same |
-
1998
- 1998-05-15 KR KR1019980017602A patent/KR100268888B1/ko not_active IP Right Cessation
- 1998-10-21 JP JP31701398A patent/JP3627003B2/ja not_active Expired - Lifetime
-
1999
- 1999-05-14 DE DE19922437A patent/DE19922437C2/de not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH11340439A (ja) | 1999-12-10 |
| KR19990085276A (ko) | 1999-12-06 |
| DE19922437A1 (de) | 1999-11-25 |
| KR100268888B1 (ko) | 2000-10-16 |
| DE19922437C2 (de) | 2003-06-12 |
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