JP3570738B2 - 太陽光発電用屋根 - Google Patents

太陽光発電用屋根 Download PDF

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JP3570738B2
JP3570738B2 JP18566593A JP18566593A JP3570738B2 JP 3570738 B2 JP3570738 B2 JP 3570738B2 JP 18566593 A JP18566593 A JP 18566593A JP 18566593 A JP18566593 A JP 18566593A JP 3570738 B2 JP3570738 B2 JP 3570738B2
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roof
base material
power generation
solar cell
roofing
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JPH0745852A (ja
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卓郎 井原
修 石川
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Misawa Homes Co Ltd
Fuji Electric Co Ltd
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Misawa Homes Co Ltd
Fuji Electric Holdings Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/202Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
    • H01L31/204Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table including AIVBIV alloys, e.g. SiGe, SiC
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    • H01ELECTRIC ELEMENTS
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    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
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    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042PV modules or arrays of single PV cells
    • H01L31/0445PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042PV modules or arrays of single PV cells
    • H01L31/0445PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • H01L31/0463PV modules composed of a plurality of thin film solar cells deposited on the same substrate characterised by special patterning methods to connect the PV cells in a module, e.g. laser cutting of the conductive or active layers
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    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/202Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02SGENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
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    • H02S20/22Supporting structures directly fixed to an immovable object specially adapted for buildings
    • H02S20/23Supporting structures directly fixed to an immovable object specially adapted for buildings specially adapted for roof structures
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02BCLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B10/00Integration of renewable energy sources in buildings
    • Y02B10/10Photovoltaic [PV]
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    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S136/00Batteries: thermoelectric and photoelectric
    • Y10S136/291Applications

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Description

【0001】
【産業上の利用分野】
本発明は、住宅等の上部に設置して電力を得ることのできる太陽光発電用屋根に関する。
【0002】
【従来の技術】
クリーンエネルギーの供給源としての太陽電池に対する期待は大きい。太陽電池により得られる電力量は、太陽電池の面積に比例するため大きな電力量を得るためには、広い太陽電池の設置場所が必要である。そのような設置場所として、建築物の上面、特に他の利用の途が少ない傾斜した住宅などの瓦ぶきの屋根の上を利用することは、電力消費場所に近接している点でも適している。
【0003】
太陽電池を住宅等の屋根の上に設置する最も単純な方法は、屋根瓦上に架台を屋根構造部材に金具等で固定することによって設置し、この架台上に複数の太陽電池素子からなるモジュールを設置する方法である。しかし、この場合には、架台やモジュールは屋根とは独立の構造物となり、大きな強度を要求されることになるばかりでなく、架台並びに太陽電池モジュールが住宅の美観を損ねてしまうという問題点があった。
【0004】
そこで、これに代わる方法として太陽電池瓦の開発が進められている。この太陽電池瓦は、瓦基材の上に太陽電池素子を直接形成する、あるいは瓦基材に太陽電池素子を貼りつけたり、埋め込んだりすることにより形成される。
【0005】
【発明が解決しようとする課題】
しかし、このような太陽電池瓦には、それ自体が高コストであるという問題点の他に、設置作業が極めて繁雑であるという実用上の大きな問題点がある。すなわち、個々の太陽電池瓦には+と−の2個の出力端が設けられ、瓦敷設時に、この出力端を太陽電池表面を遮らないように適宜直列あるいは並列につないでいく配線作業は極めて繁雑であり、設置コストが高コストとなる。
【0006】
本発明の目的は、これらの問題点を解決し、構築容易で低コストの太陽光発電用屋根を提供することにある。
【0007】
【課題を解決するための手段】
上記の目的を達成するために、本発明の太陽光発電用屋根は、
屋根仕上材が可とう性下地材の上に取り付けられるものであって、仕上材が透光性であり、下地材が可とう性基板上に薄膜太陽電池を形成してなる防水性を有するルーフィングであり、ルーフィングは互いに端部を重ねて敷設されているものとする。ここで、仕上材が透明な材料からなる瓦であることが有効であり、下地材の薄膜太陽電池の、可とう性基板側とは反対側が全面表面保護層で覆われることが良い。また、下地材が切断可能部に出力端導体が露出する長尺のロール材から切り出されたこと、複数の下地材の各切断部に露出する出力端導体が相互に接続されたこと、あるいは下地材の切断部に露出する出力端導体の一対がインバータに接続されることが好ましい。
【0008】
【作用】
住宅などの屋根は、ルーフィングと呼ばれる防水性の可とう性下地材の上に瓦などの屋根仕上材をふくことによって作られる。このルーフィングに、可とう性基板上に薄膜太陽電池を形成したものを用い、その上の仕上材を透光性にすることにより架台を構築する必要がなく、仕上材を透過する太陽光により屋根自体で発電することが可能になる。そして、下地材はロール状長尺物として作成しておき必要な長さだけ切り出すことができ、かつその切り出し部に出力端導体が露出するようにしておけば、その導体相互を接続することにより、下地材上の太陽電池の直列あるいは並列の任意の接続が可能である。また、その出力端導体を用いてインバータに接続することもできる。
【0009】
【実施例】
以下、図を引用して本発明の実施例について述べる。
図1(a) 、(b) は本発明の一実施例の住宅屋根の施工を示し、屋根ボード2の上に、表面上に太陽電池モジュールを備えたルーフィング11、12、13を軒から棟に向かって3列に100mm ずつ重ねて敷設し、タッカーで固定する〔図1(a) 〕。次に、ルーフィングの上に強化ガラスよりなる瓦3をしきつめ、取付部材4を用いて固定する。このあと、さらに大棟のがんぶり部5を構築する〔図1(b) 〕。
【0010】
図1の屋根に用いたルーフィングは、図2に示すようにポリエーテルサルフォン、アラミド、ポリエチレンテレフタレート、ポリエチレンナフタレート、ポリイミドのような高分子材料のフィルム10を基板として用いる。この可とう性基板10の上に、アルミニウム薄膜を300nm の厚さにスパッタ法で成膜し、フォトリソグラフィによりパターニングして裏面電極21、22、23─を短冊状に形成する。次に、プラズマCVD成膜室に、Hと10%のSiHの混合ガスを1000sccm、Cを5sccm、Bを1sccmの流量で流し、0.1Torrの圧力、100 mW/cmのパワー密度で非晶質SiCからなるp層を100 Åの膜厚に、 (10%SiH+H) ガスを1000sccm、Cを5sccmの流量で流し、1.0Torrの圧力、100 mW/cmのパワー密度で非晶質SiCからなるバッファ層を100 Åの膜厚に順次成膜する。次に、100 %SiHガスを1000sccmの流量で流し、0.5Torrの圧力、100 mW/cmのパワー密度で非晶質Siからなるi層を3000Åの膜厚に、(10 %SiH+H) ガスを1000sccm、PHを4sccmの流量で流し、1.0Torrの圧力、100 mA/cmのパワー密度で非晶質Siからなるn層を300 Åの膜厚に順次成膜する。そして、フォトリソグラフィによりパターニングして薄膜半導体領域31、32、33─を短冊状に形成する。次いで、酸化すずあるいはITO、ZnOなどの透明導電材料をスパッタ法で2000nmの厚さに成膜し、パターニングして短冊状の透明電極41、42、43─を形成する。これにより、裏面電極21、半導体薄膜31、透明電極41の組合わせ、裏面電極22、半導体薄膜32、透明電極42の組合わせ等によって構成される各ユニットセルが直列に接続される。
【0011】
ロール状の長尺可とう性基板10上には、図3に示すように、約200 直列に接続したユニットセルからなる発電部61、62、63が間隙7を介して形成され、その間で正端子リード81と負端子リード82が露出している。各発電部61、62、63は、基板10の幅方向に図2に示した方法でユニットセルを直列接続すると共に、基板10の長手方向にも直列接続して200 Vのインバータに対する最適動作電圧である約280 Vの電圧が各発電部ごとに正端子リード81と負端子リード82から取り出せるようにする。さらに、発電部61、62と間隙7全体を覆って、図2に示すように厚さ50μmのポリビニルフルオライドからなる保護フィルム9を貼り付け、防水性を高める。
【0012】
このようにして製造されたルーフィングを図1に示すように屋根に敷設するには、屋根の寸法に合わせて基板10を間隙7の位置で切断する。間隙8の位置では、裏面電極21、22、23─と透明電極31、32、33─の少なくとも一方が除かれた構造となっているので、はさみやナイフ等で切断しても、裏面電極が接触して電気的短絡を起こすことはない。そして、切断されない間隙では、各発電部61、62、63はリード81、82により並列に接続される。図1に示した屋根ボード2の上に敷設されたルーフィング11、12、13は、切断された端部で露出している正端子リード81および負端子リード82をそれぞれ配線によって並列接続する。そして最外端にある正端子リード81と負端子リード82をインバータに接続することにより、太陽光によって発電された電力を実用化する。
【0013】
【発明の効果】
本発明によれば、通常の住宅のルーフィングに相当する可とう性下地材を太陽電池モジュールを表面上に有する可とう性基板で、また、瓦に相当する屋根仕上材を透明なガラスで構成する構造としたので、太陽電池モジュールと住宅との一体感に優れ、屋根上に架台を設置し、その上に太陽電池モジュールを設置する場合のように建物の美観を損なうことがなく、構築が容易である。可とう性下地材は、可とう性フィルムを基板として薄膜太陽電池モジュールをロール状に形成しておき、あらかじめモジュール中に一定間隔おきに設けておいた間隙で屋根の寸法に合わせて切断して屋根上に敷設できるようにしたので、通常の紙製ルーフィングを敷設するのと全く同様の簡便な施工方法により屋根上に太陽電池を設置することができる。
【0014】
さらに、屋根上に敷設した下地材上の太陽電池モジュールの並列接続は、敷設後端部に露出する端子導体をすべて並列に配線すれば良く、1枚ずつ設置する毎に直並列に配線する必要のある太陽電池瓦と比べ、配線作業が極めて容易である。
【図面の簡単な説明】
【図1】本発明の一実施例の屋根の施工を(a) 、(b) の順に示す斜視図
【図2】本発明の一実施例の屋根下地材の断面図
【図3】本発明の一実施例の屋根下地材の素材を示す斜視図
【符号の説明】
10 可とう性基板
11、12、13 ルーフィング
2 屋根ボード
21、22、23 裏面電極
3 ガラス瓦
31、32、33 薄膜半導体領域
4 取付部材
41、42、43 透明電極
5 がんぶり部
61、62、63 発電部
7 間隙
81 正端子リード
82 負端子リード
9 保護フィルム

Claims (6)

  1. 屋根仕上材が可とう性下地材の上に取り付けられるものであって、仕上材が透光性であり、下地材が可とう性基板上に薄膜太陽電池を形成してなる防水性を有するルーフィングであり、ルーフィングは互いに端部を重ねて敷設されていることを特徴とする太陽光発電用屋根。
  2. 仕上材が透明な材料よりなる瓦である請求項1記載の太陽光発電用屋根。
  3. 下地材の薄膜太陽電池の、可とう性基板側とは反対側が全面表面保護層で覆われた請求項1あるいは請求項2記載の太陽光発電用屋根。
  4. 下地材が切断可能部に出力端導体が露出する長尺のロール材から切り出された請求項1ないし3のいずれかに記載の太陽光発電用屋根。
  5. 複数の下地材の各切断部に露出する出力端導体が相互に接続された請求項4記載の太陽光発電用屋根。
  6. 下地材の切断部に露出する出力端導体の一対がインバータに接続された請求項4あるいは5記載の太陽光発電用屋根。
JP18566593A 1993-07-28 1993-07-28 太陽光発電用屋根 Expired - Fee Related JP3570738B2 (ja)

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US08/280,882 US5482569A (en) 1993-07-28 1994-07-27 Roof for generating electricity by solar light

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