JP3564215B2 - 干渉露光装置およびそれを用いた干渉露光方法 - Google Patents

干渉露光装置およびそれを用いた干渉露光方法 Download PDF

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Publication number
JP3564215B2
JP3564215B2 JP31291495A JP31291495A JP3564215B2 JP 3564215 B2 JP3564215 B2 JP 3564215B2 JP 31291495 A JP31291495 A JP 31291495A JP 31291495 A JP31291495 A JP 31291495A JP 3564215 B2 JP3564215 B2 JP 3564215B2
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Japan
Prior art keywords
prism
light
interference exposure
exposure apparatus
photosensitive film
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Expired - Fee Related
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JP31291495A
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English (en)
Japanese (ja)
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JPH09153446A (ja
JPH09153446A5 (enExample
Inventor
幸司 高橋
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Sharp Corp
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Sharp Corp
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Priority to JP31291495A priority Critical patent/JP3564215B2/ja
Publication of JPH09153446A publication Critical patent/JPH09153446A/ja
Application granted granted Critical
Publication of JP3564215B2 publication Critical patent/JP3564215B2/ja
Publication of JPH09153446A5 publication Critical patent/JPH09153446A5/ja
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70408—Interferometric lithography; Holographic lithography; Self-imaging lithography, e.g. utilizing the Talbot effect
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03H—HOLOGRAPHIC PROCESSES OR APPARATUS
    • G03H2223/00—Optical components
    • G03H2223/18—Prism

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Diffracting Gratings Or Hologram Optical Elements (AREA)
JP31291495A 1995-11-30 1995-11-30 干渉露光装置およびそれを用いた干渉露光方法 Expired - Fee Related JP3564215B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP31291495A JP3564215B2 (ja) 1995-11-30 1995-11-30 干渉露光装置およびそれを用いた干渉露光方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP31291495A JP3564215B2 (ja) 1995-11-30 1995-11-30 干渉露光装置およびそれを用いた干渉露光方法

Publications (3)

Publication Number Publication Date
JPH09153446A JPH09153446A (ja) 1997-06-10
JP3564215B2 true JP3564215B2 (ja) 2004-09-08
JPH09153446A5 JPH09153446A5 (enExample) 2004-12-16

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ID=18034990

Family Applications (1)

Application Number Title Priority Date Filing Date
JP31291495A Expired - Fee Related JP3564215B2 (ja) 1995-11-30 1995-11-30 干渉露光装置およびそれを用いた干渉露光方法

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JP (1) JP3564215B2 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4514317B2 (ja) * 2000-11-27 2010-07-28 株式会社ミツトヨ 露光装置
US8110345B2 (en) * 2002-12-04 2012-02-07 Taiwan Semiconductor Manufacturing Company, Ltd. High resolution lithography system and method
US7492442B2 (en) * 2004-08-27 2009-02-17 Asml Holding N.V. Adjustable resolution interferometric lithography system
KR100881140B1 (ko) * 2007-08-09 2009-02-02 삼성전기주식회사 나노패턴 형성장치 및 이를 이용한 나노패턴 형성방법
JP5487592B2 (ja) * 2007-11-06 2014-05-07 セイコーエプソン株式会社 レーザー加工方法
CN112596139A (zh) * 2020-12-18 2021-04-02 中国科学院上海光学精密机械研究所 一种短波范围反射式体光栅的光栅结构写入方法

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Publication number Publication date
JPH09153446A (ja) 1997-06-10

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