JP3506660B2 - Method for manufacturing electron source substrate, electron source substrate manufactured by the method, and image display device using the substrate - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing an electron source substrate using a surface conduction electron-emitting device, an electron source substrate manufactured by the method, and an image display device using the substrate.

[0002]

2. Description of the Related Art Conventionally, two types of electron emitters, a thermoelectron source and a cold cathode electron source, are known. The cold cathode electron source includes a field emission type (hereinafter referred to as FE type), a metal / insulating layer / metal type (hereinafter referred to as MIM type), a surface conduction type electron emitting device, and the like. An example of the FE type is "WP Dyke
& W. W. Dolan, “Field Emissi”
on ”, Advance in Electron P
hysics, 8 89 (1956) "or" C.
A. Spindt, “Physical Proper
ties of thin-film fielddem
ision cathodes with molly
bdenium "J. Appl. Phys., 4752.
48 (1976) "and the like are known. An example of the MIM type is “CA Mead,“ The Tunnel-
emission amplifier ", J. App
l. Phys. , 32 646 (1961) "and the like.

As an example of the surface conduction electron-emitting device type,
"MI Elinson, Radio Eng. El
electron Phys. , 1290 (1965) ”and the like. The surface conduction electron-emitting device utilizes a phenomenon in which electron emission occurs when a current is applied to a thin film having a small area formed on a substrate in parallel with the film surface. As the surface conduction electron-emitting device, the above Elinson is used.
Etc. using a SnO ₂ thin film, Au thin film (“G. Dittmer:“ Thin SolidF
ilms ", 9 317 (1972)"), In ₂ O ₃ /
With SnO ₂ thin film (“M. Hartwell a
nd C.I. G. Fonstad: "IEEETran
s. ED Conf. ", 519 (1975)"), by a carbon thin film ("Hiraki Araki et al .: Vacuum, Vol. 26,"
No. 1, p. 22 (1983) ”) and the like are reported.

As a typical device configuration of these surface conduction electron-emitting devices, the above-mentioned M. FIG. 20 shows the Hartwell device configuration. In FIG. 20, 1 is a substrate and 2,
3 is a device electrode, 4 is a conductive thin film, and the conductive thin film 4 is H
The electron-emitting portion 5 is formed on the pattern of the mold shape by a metal oxide thin film or the like formed by sputtering, and by an energization process called energization forming described later. The distance L1 between the device electrodes 2 and 3 in the figure is 0.5 to 1 mm, W1
Is set to 0.1 mm.

Conventionally, in these surface conduction electron-emitting devices, the electron-emitting portion 5 is generally formed by subjecting the conductive thin film 4 to an energization process called energization forming in advance before the electron emission. Target. The energization forming means that a direct current voltage or a very slow rising voltage (for example, about 1 V / min) is applied to both ends of the electroconductive thin film 4 to energize the electroconductive thin film 4 so that the electroconductive thin film 4 is locally broken, deformed or altered to electrically. That is, the electron-emitting portion 5 having a high resistance is formed. In the electron emitting portion 5, a crack is generated in a part of the conductive thin film 4, and electrons are emitted from the vicinity of the crack. In the surface conduction electron-emitting device that has been subjected to the energization forming process, a voltage is applied to the conductive thin film 4 and a current is passed through the device so that electrons are emitted from the electron-emitting portion 5.

Since the surface conduction electron-emitting device as described above has a simple structure and is easy to manufacture, it has an advantage that a large number of devices can be arrayed over a large area. Therefore, application research of a charged beam source, a display device, and the like, which makes use of this feature, has been conducted. As an example in which a large number of surface conduction electron-emitting devices are formed in an array, as will be described later, surface conduction electron-emitting devices are arranged in parallel called a ladder arrangement, and both ends of each device are wired (also called common wiring). ), An electron source in which a large number of connected lines are arranged (for example, JP-A-64-31332, JP-A-1-283749, JP-A-2-257552).

In particular, in an image forming apparatus such as a display device, in recent years, a flat panel display device using a liquid crystal is a CRT.
However, since it is not a self-luminous type, there is a problem that it is necessary to have a backlight, etc. Therefore, development of a self-luminous display device has been desired. An example of the self-luminous display device is an image forming device which is a display device in which an electron source having a large number of surface-conduction type emitting elements arranged therein and a phosphor which emits visible light by electrons emitted from the electron source are combined. (For example, US Pat. No. 5,066,883.
issue).

However, the conventional manufacturing method of the surface conduction electron-emitting device uses the vacuum film formation and the photolithography / etching method in the semiconductor process, and therefore, in order to form the device over a large area,
There are disadvantages that the number of steps is large and the production cost of the electron source substrate is high.

With respect to the above problems, the inventor of the present invention
In forming the conductive thin film of the element portion of the surface conduction electron-emitting device as described above, US Pat.
No., 3298030, 3596275, 34
No. 16153, No. 3747120, No. 5729257
It is possible to form the above-mentioned conductive thin film stably with a good yield and at low cost by the ink jet droplet applying means known as No. etc. without using the vacuum film forming method and the photolithography etching method. I thought it might be.

However, unlike an ink jet printer that ejects and records so-called ink onto paper, the function required as a manufacturing device for manufacturing such an electron source substrate in a factory, and the electronic device manufactured by it. The source substrate also has the character of a component unit that is shipped from the factory, and it is still necessary to devise it when actually applying this inkjet technology.

[0011]

(Object of the Invention) The present invention provides a method for manufacturing an electron source substrate of an image display device using the surface conduction electron-emitting device as described above, the electron source substrate and the same. The present invention relates to an image display device, and an object of the inventions of claims 1 and 2 is to make it possible to distinguish between the manufactured electron source substrates in the electron source substrate having the surface conduction electron-emitting device . Claim 3
An object of the present invention is to enable the image display devices using the above-mentioned electron source substrate to be distinguished from each other after manufacturing.

[0012]

[Summary of the invention of claim 1 arranges the element electrodes of the plurality pieces of a pair on the substrate, a liquid solution containing the material of the conductive thin film between device electrodes of each single pair a method of manufacturing an electron source substrate the droplets ejected applied to form a surface conduction electron-emitting element group by the conductive thin film, outside the region the surface conduction electron-emitting element group is formed, prior to
By applying a droplet of a solution containing the material of the conductive thin film, a pattern that makes it possible to distinguish the electron source substrate manufactured by the method for manufacturing the electron source substrate for each substrate or for each of a plurality of substrate groups. It is characterized by being formed.

[0013]

[0014]

According to a second aspect of the present invention, a surface conduction electron-emitting device having a plurality of paired device electrodes arranged on a substrate and a conductive thin film formed by being sprayed between each pair of device electrodes. An electron source substrate forming a group, outside the region where the surface conduction electron-emitting device group is formed,
It is characterized in that a pattern is formed by which droplets of a solution containing the material of the conductive thin film that has been jetted can be used to distinguish the electron source substrate for each substrate or for each of a plurality of substrate groups. is there.

[0016]

[0017]

The invention of claim 3 has a plurality of paired device electrodes arranged on the substrate, and a conductive thin film formed by spraying a conductive solution between each pair of device electrodes. An electron source substrate having a surface conduction electron-emitting device group formed thereon, and a second electrode separate from the device electrode group outside the region where the surface conduction electron-emitting device group is formed.
A plurality of paired device electrodes of the
An electron source substrate on which a second surface conduction electron-emitting device group made of a conductive thin film is formed by jetting droplets of a conductive solution between a plurality of paired device electrodes, and facing the electron source substrate. And a face plate on which a phosphor is mounted, the second surface conduction electron-emitting device group being driven by inputting different signal information for each electron source substrate. By displaying on the image display device, the image display device can be distinguished for each image display device.

[0019]

1 is a schematic view showing an example of an electron source substrate which constitutes a flat surface conduction electron-emitting device according to an embodiment of the present invention, and FIG. 1 (A) is a plan view thereof. , Figure 1
1B is a sectional view taken along the line BB of FIG. 1A, in which 1 is a substrate, 2 and 3 are element electrodes, 4 is a conductive thin film, and 5 is an electron emitting portion. The basic configuration of the surface conduction electron-emitting device of the present invention is a planar type, and here, for simplification, the configuration of one planar type surface conduction electron-emitting device is schematically shown. As will be described later, such plane type surface conduction electron-emitting devices are configured as a group of devices arranged in a matrix.

As the substrate 1, quartz glass, glass having a reduced content of impurities such as Na, soda lime glass, SiO ₂
It is possible to use a glass substrate having a surface deposited thereon, a ceramic substrate such as alumina, or the like. Element electrodes 2, 3
As a material of the above, a general conductive material can be used. For example, Ni, Cr, Au, Mo, W, Pt, T
Metals or alloys such as i, Al, Cu, Pd, Pd, A
A printed conductor composed of a metal such as s, Ag, Au, RuO ₂ , Pd-Ag or a metal oxide and glass, In
It is appropriately selected from transparent conductors such as ₂ O ₃ —SnO ₂ and semiconductor materials such as polysilicon.

The distance L between the device electrodes 2 and 3 is preferably in the range of several thousand Å to several hundred μm, and more preferably 1 μm to 200 μm in consideration of the voltage applied between the device electrodes 2 and 3. It is a range. Length of element electrodes 2 and 3
Is a few μ in consideration of the electrode resistance and electron emission characteristics.
The thickness d of the element electrodes 2 and 3 is in the range of 100Å to 1 μm. The present invention is not limited to the configuration shown in FIG. 1, but may be a configuration in which the conductive thin film 4 and the electrodes of the device electrodes 2 and 3 are sequentially formed on the substrate 1.

FIG. 2 is a diagram for explaining a method of manufacturing the flat surface conduction electron-emitting device shown in FIG.
FIG. 2A is a diagram in which element electrodes 2 and 3 are formed on the substrate 1, FIG.
(B) is a diagram in which the conductive thin film 4 is formed on the device electrodes 2 and 3,
FIG. 2C shows a view in which the electron emitting portion 5 is formed on the conductive thin film 4. As the conductive thin film 4, a fine particle film composed of fine particles is particularly preferable in order to obtain good electron emission characteristics. The thickness of the conductive thin film 4 depends on the step coverage to the element electrodes 2 and 3 and the resistance between the element electrodes 2 and 3. The value is appropriately set depending on the value and energization forming conditions described later, but is preferably several Å to several thousand Å, particularly preferably 10 Å to 500 Å. The resistance value is 2 with Rs of 10.
It is a value of the power of 7 to 10 7 Ω. Note that Rs is the resistance R of a thin film having a thickness of t, a width of w and a length of 1, and R = Rs (1
/ W), which is expressed by Rs = ρ / t, where ρ is the resistivity of the thin film material. Here, the forming process will be described by taking the energization process as an example, but the forming process is not limited to this.
Any method may be used as long as it is a method of causing a crack in the film to form a high resistance state.

The material forming the conductive thin film 4 is P
d, Pt, Ru, Ag, Au, Ti, In, Cu, C
Metals such as r, Fe, Zn, Sn, Ta, W, Pb, Pd
Oxides such as O, SnO ₂ , In ₂ O ₃ , PbO and Sb ₂ O ₃ , HfB ₂ , ZrB ₂ , LaB ₆ , CeB ₆ , YB ₄ , G
Borides such as dB ₄ , TiC, ZrC, HfC, TaC,
It is appropriately selected from carbides such as SiC and WC, nitrides such as TiN, ZrN, and HfN, semiconductors such as Si and Ge, and carbon.

The fine particle film described here is a film in which a plurality of fine particles are aggregated, and as a fine structure, not only the fine particles are individually dispersed and arranged, but the fine particles are adjacent to each other.
Or they are in an overlapping state (including the case where some fine particles are aggregated to form an island shape as a whole). The particle size of the fine particles is several Å to 1 μm, preferably 10 Å to 200 Å.

An apparatus for manufacturing an electron source substrate having a surface conduction electron-emitting device according to an embodiment of the present invention will be described below. FIG. 3 is a diagram showing an example of an electron source substrate manufacturing apparatus according to an embodiment of the present invention, in which 11 is an ejection head unit (ejection head), 12 is a carriage,
Reference numeral 13 is a substrate holder, 14 is a substrate forming a group of flat surface conduction electron-emitting devices, 15 is a supply tube of a solution containing a material of a conductive thin film, 16 is a signal supply cable, 17
Is a jet head control box, 18 is an X direction scan motor of the carriage 12, 19 is a Y direction scan motor of the carriage 12, 20 is a computer, 21 is a control box, 22 (22X1, 22Y1, 22)
X2, 22Y2) are substrate positioning / holding means.

The structure shown in FIG. 3 shows an example in which the jet head 11 moves on the front surface of the substrate 14 placed on the substrate holder 13 by scanning the carriage to jet and apply a solution containing a conductive thin film material. is there. The ejection head 11 may have any mechanism as long as it can eject an arbitrary amount of liquid droplets in a quantitative manner, and particularly, an inkjet type mechanism capable of forming a liquid droplet of several tens of ng is desirable. The ink jet method may be any one such as a piezo jet method using a piezoelectric element, a bubble jet (registered trademark) method for generating bubbles using heat energy of a heater, or a charge control method (continuous flow method). .

FIG. 4 is a schematic diagram for explaining an example of the configuration of the droplet applying device according to the electron source substrate manufacturing apparatus of the present invention, and FIG. 5 is a discharge head unit of the droplet applying device of FIG. 2 is a schematic configuration diagram of a main part of FIG. The configuration of FIG. 4 is different from the configuration of FIG. 3 in that the substrate 14 side is moved to form the electron-emitting device group on the substrate. 4 and 5, 2, 3
Is an element electrode, 14 is a substrate, 30 is an ejection head unit,
31 is a head alignment control mechanism, 32 is a detection optical system, 33 is an inkjet head, 34 is a head alignment fine movement mechanism, 35 is a control computer, 36 is an image identification mechanism, 37 is an XY direction scanning mechanism, 38 is a position detection mechanism, 39 Is a position correction control mechanism, 40 is an inkjet head drive / control mechanism, 41 is an optical axis, 42 is a droplet, and 43 is a droplet landing position.

As in the case of FIG. 3, the droplet applying device (ink jet head 33) of the discharge head unit 30 is preferably an ink jet type mechanism, a piezo jet type using a piezoelectric element, and the heat energy of a heater is used. Any of a bubble jet method for generating bubbles and a charge control method (continuous flow method) may be used.

The configuration of the device for moving the substrate 14 side as described above will be described below. First, in FIG. 4, the substrate 14 is placed on the XY-direction scanning mechanism 37. Board 14
The surface conduction electron-emitting device above has the same structure as that shown in FIG. 1, and as a single device similar to that shown in FIG. 1, the substrate 1, the device electrodes 2 and 3 and the conductive thin film (fine particle film) 4 Has become. An ejection head unit 30 that applies droplets is located above the substrate 14. In this example, the ejection head unit 30 is fixed, and the substrate 14 is moved to an arbitrary position by the XY direction scanning mechanism 37, whereby the relative movement between the ejection head unit 30 and the substrate 14 is realized.

Next, the structure of the ejection head unit 30 will be described with reference to FIG. The detection optical system 32 captures image information on the electron source substrate 10, is close to the inkjet head 33 that ejects the droplets 42, and the optical axis 41 and the focus position of the detection optical system 32 and the liquid by the inkjet head 33. It is arranged so that the landing position 43 of the droplet 42 coincides with it. In this case, the positional relationship between the detection optical system 32 and the inkjet head 33 is determined by the head alignment fine movement mechanism 3.
4 and the head alignment control mechanism 31 enable precise adjustment. Further, here, the detection optical system 3
A CCD camera and a lens are used as 2.

Returning to FIG. 4 again, description will be made. The image discriminating mechanism 36 discriminates the image information captured by the detection optical system 32 and has a function of binarizing the contrast of the image and calculating the barycentric position of the binarized specific contrast portion. Is. Specifically, a high precision image recognition device manufactured by Keyence Corporation; VX-4210 can be used. The position detecting mechanism 38 is means for giving position information on the substrate 14 to the image information obtained by this.
For this, a length measuring device such as a linear encoder provided in the XY direction scanning mechanism 37 can be used. Further, the position correction control mechanism 39 performs position correction based on the image information and the position information on the substrate 14, and this mechanism corrects the movement of the XY direction scanning mechanism 37. In addition, the inkjet head drive / control mechanism 40
The inkjet head 33 is driven by the so that the droplets are applied onto the substrate 14. The control mechanisms described above are centrally controlled by the control computer 35.

In the above description, the ejection head unit 30 is fixed, and the substrate 14 is moved to an arbitrary position by the XY-direction scanning mechanism 37 to realize the relative movement between the ejection head unit 30 and the substrate 14. However, as shown in FIG. 3, it goes without saying that the substrate 14 may be fixed and the ejection head unit 30 may scan in the XY directions. In particular, when applied to the manufacture of an image forming apparatus having a medium screen of about 200 mm × 200 mm to a large screen of 2000 mm × 2000 mm or more, the substrate 14 is fixed and the ejection head unit 30 is orthogonal to the X, It is preferable that the scanning is performed in two directions of Y and the droplets of the solution are sequentially applied in such two orthogonal directions.

When the substrate size is about 200 mm × 200 mm or less, the ejection head unit for applying droplets is a large array multi-nozzle type capable of covering a 200 mm range, and the relative movement of the ejection head unit and the substrate is orthogonal. It is possible to make relative movement only in one direction (for example, only in the X direction) without performing in two directions (X direction, Y direction), and mass productivity can be improved, but the substrate size is 200 mm × 200 mm. In the above case, it is technically / costly difficult to realize a large array multi-nozzle type ejection head unit capable of covering such a 200 mm range, and the ejection head units 30 are orthogonal to each other as described above. Scanning is performed in two directions of X and Y, and application of droplets of the solution is sequentially performed in such two orthogonal directions. It should be configured to do so.

As the material of the droplet 42, an aqueous solution containing an element or a compound to be the above-mentioned conductive thin film, an organic solvent or the like can be used. For example, the following is an example in which the element or compound forming the conductive thin film is a palladium-based compound. Palladium acetate-ethanolamine complex (PA-M
E), palladium acetate-diethanol complex (PA-D
E), palladium acetate-triethanolamine complex (P
A-TE), palladium acetate-butyl ethanolamine complex (PA-BE), palladium acetate-dimethyl ethanolamine complex (PA-DME), and other aqueous solutions containing ethanolamine-based complexes, or palladium-glycine complex (Pd- Gly), palladium-β-alanine complex (Pd-β-Ala), palladium-DL-alanine complex (pd-DL-Ala), and other aqueous solutions containing an amine acid-based complex, and further palladium acetate bis-di- A butyl acetate solution of a propylamine complex may be used.

The droplet 42 is discharged to the discharge head unit 3
When applying the desired element electrode portion with the inkjet head 33 of 0, the position to be applied is measured by the detection optical system 32 and the image identification mechanism 36, and the measurement data, the ejection port surface of the inkjet head 33 and the substrate are measured. Corrected coordinates are generated based on the distance of 14 and the relative movement speed of the two, and droplets are applied while the substrate 14 and the inkjet head 33 are moved relative to each other according to the corrected coordinates. The detection optical system 32 may be a combination of a CCD camera and a lens, and the image identification mechanism 36 may be a commercially available one that binarizes an image and obtains its barycentric position.

As is apparent from the above description, in the electron source substrate of the present invention, a solution containing an element or a compound to be a conductive thin film is made to fly in the air by the principle of ink jet,
It is manufactured by being applied as droplets on a substrate.

FIG. 5B described above shows an image in which one droplet 42 is attached between the device electrodes 2 and 3.
The electron emission portion is also shown as a round image (that is, the droplet landing position 43 is shown as a round image). In other words, if an electron-emitting device that does not require such high precision is formed, this electron-emitting portion may be formed between the device electrodes 2 and 3 with one large dot formed by one large droplet. For example, when the distance between the device electrodes 2 and 3 is 5 to 10 mm and the dot diameter of one drop is about Φ8 to 15 mm, one drop may be attached to form the electron emitting portion. In this case, a highly accurate electron-emitting device cannot be expected,
If only the electron emission is required, the electron emission element can be formed more efficiently (see FIG. 6). However, in order to form a higher-precision electron-emitting device, this electron-emitting portion may be formed by a plurality of droplets and the contour thereof may be smooth.

FIG. 6 is a schematic plan view for explaining an example in which the electron-emitting device portion is formed by one droplet, and FIG. 7 is a dot of a flat surface-conduction electron-emitting device formed according to the present invention. It is a schematic plan view showing an example of a pattern. As one preferable example, the distance between the device electrodes 2 and 3 is 140
μm. Then, the dot diameter when only one droplet is individually attached is set to about Φ180 μm (FIG. 6). Next, four droplets are ejected so as to form a pattern filling the space between 140 μm of the device electrodes 2 and 3 (FIG. 7). Figure 7
In the example shown by, the dot diameter when four dot patterns 44 are overlapped and attached is about Φ45 μm.

In other words, depending on the productivity or the accuracy of the electron-emitting device, the gap between the device electrodes 2 and 3 is filled with only one large drop, or a plurality of small drops (four drops in this case) are used for high precision. Whether to form a different pattern may be appropriately selected. The specific conditions for forming such droplets and dots are shown below.

The solution used was an aqueous solution of palladium acetate-triethanolamine and was produced as follows. That is, 150 g of palladium acetate
The suspension was suspended in 000 cc of isopropyl alcohol, 610.5 g of triethanolamine was further added, and the mixture was stirred at 35 ° C. for 12 hours. After completion of the reaction, isopropyl alcohol was removed by evaporation, ethyl alcohol was added to the solid matter to dissolve and filter the solid matter, and palladium acetate-triethanolamine was recrystallized from the filtrate to obtain the product. 4 g of the palladium acetate-triethanolamine thus obtained was dissolved in 96 g of pure water to obtain a solution (4.0 wt%).

The jet head used had a structure equivalent to that of an edge shooter type thermal ink jet system (however, the above solution was used instead of ink). The ejection head in the case where one dot diameter is about Φ45 μm as shown in FIG. 7 has a nozzle diameter of Φ25 μm, a heating element size of 25 μm × 90 μm (resistance value 121 Ω),
The driving voltage is 22.6 V, the pulse width is 6 μs, and the driving frequency is 10 kHz, and the energy for forming one drop is about 2
It is set to 5.3 μJ, and the ejection velocity of the droplet at that time is about 7 m / s.
Met.

The above-mentioned conditions of the solution and the jetting are an example of the case where the distance between the device electrodes 2 and 3 is 140 μm and four drops are adhered thereto, and the present invention is not limited to this condition. . For example, FIG.
The distance 3 is 140 μm, but 6 drops × 2 rows = 12 drops are attached to form an electron-emitting device. In this example, the dot diameter is approximately Φ22 μm. In this case, the jet head used has a nozzle diameter of Φ14 μm, and correspondingly, the heating element size is 14 μm × 6.
The driving voltage is 11.5 V, the pulse width is 4 μs, and the driving frequency is 16 k.
The droplets were jetted by driving at a frequency of Hz and the energy for forming one droplet was about 5.2 μJ. The jet speed of the droplets at that time was about 6 m / s.

The distance between the device electrodes 2 and 3 is not limited to 140 μm, and it is necessary to arrange the electron-emitting devices on the electron source substrate at a high density in order to manufacture a higher-definition image display device. For example, the distance between the device electrodes 2 and 3 is 50
In some cases, it may be μm. Also in this case, the jet head used has a nozzle diameter of Φ14 μm as described above, and the heating element size, driving conditions, etc. are appropriately selected.

That is, in the present invention, the number of droplets to be deposited is appropriately selected from about 1 to 30 droplets according to the distance between the device electrodes 2 and 3 and the required accuracy of the electron-emitting device, and electron emission is performed under optimum conditions. It forms an element and is not limited to special conditions. Although the number of droplets to be deposited depends on the nozzle diameter of the jet head used, a maximum of 30
From the viewpoint of productivity, it is desirable to keep the amount of droplets (it is possible to attach a larger number of finer droplets, but the productivity is reduced and this is disadvantageous in terms of cost).

FIG. 9 is a diagram showing an example of an ejection head for performing efficient dot formation, FIG. 9 (A) shows the assembled ejection head, and FIG. 9 (B) shows FIG. 9 (A). 9B is an exploded view of the ejection head in FIG. 9C, and FIG. 9C is a view in which the lid substrate shown in FIG. The ejection head used in the present invention will be described with reference to FIG. Here, an example is shown in which the number of nozzles of the ejection head is four. In FIG.
Reference numeral 51 is a heating element substrate, 52 is a lid substrate, and 50 is a heating element substrate 5.
1 is a jet substrate (ink jet head) formed by joining the lid substrate 52, 53 is a silicon substrate used for forming the heating element substrate 51, 54 is an individual electrode, 5
5 is a common electrode, 56 is a heating element, 57 is a solution inlet, 58
Is a nozzle, 59 is a groove, and 60 is a concave region. The heating element substrate 51 is configured by forming an individual electrode 54, a common electrode 55, and a heating element 56 which is an energy acting portion on a silicon substrate 53 by a wafer process.

On the other hand, the lid substrate 52 has a common groove 59 for forming a channel for introducing a solution containing an element or a compound to be a conductive thin film, and a solution for introducing the solution introduced into the channel. A recessed region 60 for forming a liquid chamber (not shown) is formed, and the heat generating substrate 51 and the lid substrate 52 are joined as shown in FIG. A common liquid chamber is formed. In the state where the heating element substrate 51 and the lid substrate 52 are bonded, the heating element 56 is located on the bottom surface of the flow channel, and the solution introduced into these flow channels is located at the end of the flow channel. A nozzle 58 for ejecting a part as a droplet is formed. Further, the lid substrate 52 is provided with a solution inlet 57 for supplying a solution into the supply liquid chamber by a supply means (not shown).

In this example, an ejection head having four nozzles is shown, but using such a multi-nozzle type ejection head makes it possible to form an electron-emitting device very efficiently. It should be noted that although the ejection head having four nozzles is shown in this example, it is not necessarily limited to four nozzles, and it goes without saying that the greater the number of nozzles, the more efficient the formation of electron-emitting devices. However, it is not a matter of simply increasing the number, and if the number is increased, the ejection head will be more expensive, and the probability of clogging of the ejection nozzle will also increase. The balance of the manufacturing efficiency of the device) is taken into consideration.

Further, not only the number of nozzles but also the nozzle array arrangement length (effective ejection width of the ejection head) must be considered in the same manner. In other words, it is not necessary to simply increase the nozzle array arrangement length (effective ejection width of the ejection head), but this is also determined by considering the balance of the entire device (balance between device cost and manufacturing efficiency of electron-emitting devices). To be

As an example, in the present invention, the number of nozzles and the nozzle array arrangement length of the multi-nozzle (effective ejection width of the ejection head) are equal to or larger than the distance between the element electrodes 2 and 3. The array density is determined. However, here, to be larger than that does not mean that the size is unlimitedly large, but that the size is slightly larger than the distance between the device electrodes 2 and 3. In other words, the basic idea of the present invention is to minimize the cost of the ejection head by using an ejection head that secures a nozzle array arrangement length (effective ejection width of the ejection head) that is equivalent to the distance between the element electrodes 2 and 3. Hold down
In addition, the length of the nozzle array is equal to the distance between the device electrodes 2 and 3 (effective ejection width of the ejection head) to efficiently manufacture the electron-emitting device.

More specific numerical values will be described in the case of driving the four droplets so as to form a pattern filling the space between 140 μm of the device electrodes 2 and 3 as described above. in this case,
In the present invention, the nozzle array arrangement length of four nozzles (effective ejection width of the ejection head, in other words, the distance between the nozzles at both ends) shown in FIG. 9 is about 127 μm (14 of the element electrodes 2 and 3).
It can be considered that the length is almost equal to that of 0 μm), and the distance between each nozzle is about 42.3 μm. In other words, in this case, as the ejection head, 600 dpi (dot per in
ch) A nozzle having a nozzle arrangement density equivalent to that of the above is used.

Although the above description has been made with reference to the 4-nozzle jet head shown in FIG. 9, the distance between the nozzles is about 42.3 μm.
It is also conceivable to use a 6-nozzle jet head. In this case, the nozzle array arrangement length of 6 nozzles (effective ejection width of the ejection head, in other words, the distance between nozzles at both ends) is set to about 212 μm (which can be regarded as larger than 140 μm between the element electrodes 2 and 3). The distance between the electrodes 2 and 3 can be covered with a sufficient length of the nozzle array so that the electron-emitting device can be efficiently manufactured.

10 to 12 are schematic plan views for explaining an electron source substrate and a method for manufacturing the same according to one embodiment of the present invention. In the embodiment shown in FIG. 10, a spray application pattern of a solution is formed outside the region where the surface conduction electron-emitting device group is formed. The electron source substrate 10 is on the substrate 10 as shown in the figure. Forming a surface-conduction electron-emitting device group having a plurality of pairs of device electrodes 2 and 3 arranged on the substrate and a conductive thin film 4 formed by being sprayed between the device electrodes 2 and 3 of each pair. The area to which the jetting is applied is wider than the area where the surface conduction electron-emitting device group is formed.

The electron source substrate 10 particularly comprises a plurality of pairs of element electrodes 2 and 3 arranged on the substrate 10 and a conductive thin film 4 formed by jetting between the pair of element electrodes 2 and 3. An electron source substrate having a surface-conduction electron-emitting device group formed thereon, which is jetted and applied to outer sides Xa, Xb, Ya, Yb of regions X and Y where the surface-conduction electron-emitting device group is formed. A pattern that allows the electron source substrate 10 to be distinguished for each substrate or for each of a plurality of substrate groups is formed by the droplets of the solution.

Further, in the manufacturing method, a plurality of pairs of element electrodes 2 and 3 are arranged on the substrate 10, and droplets of a solution containing the material of the conductive thin film 4 are placed between the pair of element electrodes 2 and 3. 1. A method of manufacturing an electron source substrate, wherein a surface conduction electron-emitting device group is formed by jetting and applying the electroconductive thin film, the method comprising: an outer side Xa of regions X and Y where the surface conduction electron-emitting device group is formed. , Xb, Ya, Yb are formed by spraying droplets of a solution to form a pattern that allows the electron source substrate 10 manufactured by the method for manufacturing the electron source substrate to be distinguished for each substrate or for each of a plurality of substrate groups. It is something that is done.

FIG. 10 (A) is a diagram showing the arrangement of electron-emitting devices on the electron source substrate and the spraying pattern, and FIG. 10 (B) is an enlarged view of the pair of electron-emitting devices shown in FIG. 10 (A). 1
0 (C) is a diagram showing the nozzle array of the ejection head,
Reference numeral 58 is a nozzle of the ejection head.

As described above with reference to FIGS. 3 and 4, in the present invention, the ejection head imparts droplets while moving relative to the substrate 14 (electron source substrate 10) to form an electron-emitting device group. Form. FIG. 10 shows the element electrodes 2 and 3 formed on the electron source substrate 10 and an electron-emitting device group formed by applying four droplets in the vertical direction (sub-scanning direction) between the device electrodes 2 and 3. At the same time, the ejection head is shown in a view as seen from the nozzle surface. The horizontal direction is defined herein as the main scanning direction.

In order to simplify the description, here, the relative movement of the ejection head and the substrate 14 (electron source substrate 10) is placed on the front surface of the substrate 14 as in the case of FIG. 3, and the ejection is carried by the carriage. An example will be described in which the head is applied with droplets while moving in the main scanning direction and the sub-scanning direction to form an electron-emitting device group.

As described above, in FIG. 10, the device electrodes 2, 3
Although an electron-emitting device group formed by applying four droplets in the vertical direction (sub-scanning direction) is shown between them, in the present invention, the electron-emitting device group is formed on such a substrate 14 (electron source substrate 10). Not only the pattern is formed, but other patterns are also formed by using the same ejection head.

Therefore, as shown in FIG.
Regions Y are electron-emitting device group formation regions in the main scanning direction and the sub-scanning direction, respectively.
A small space is provided outside the electron-emitting device group formation region such as region Xb, region Ya, and region Yb, and the ejection head mounted on the carriage applies droplets while moving in the main scanning direction and the sub-scanning direction. Also in this case, carriage scanning can be performed even in these areas Xa, Xb, Ya, and Yb, and the same solution as that ejected to form the electron-emitting device group is ejected in these areas as well. The electron source substrate manufacturing method and device can be applied. Further, the substrate 14 (electron source substrate 10) used is not only a substrate on which the electron-emitting device group is formed, but also a substrate provided with a little space outside the electron-emitting device group formation region.

By using the electron source substrate manufacturing apparatus, the manufacturing method used in the manufacturing apparatus, and the substrate as described above, the ejection head is not limited to the pattern formation for forming the electron-emitting device group but other patterns. It also becomes possible to form. For example, pattern formation for distinguishing each substrate from other substrates can be performed. As a more specific example, in FIG. 10, “123” is shown as the board distinguishing pattern, but the manufacturing number, the manufacturing date, and the like can be formed on each board by the ejection head. Needless to say, it is not limited to such numbers and characters, and any symbol or design may be used as long as it is for distinguishing one sheet by one sheet or a plurality of sheets.

Normally, such a serial number or the like is affixed or stamped on a completed component unit with a nameplate, but as in the present invention, a component requiring extremely high precision and cleanliness. In the manufacturing of the unit (electron source emission substrate), if there is a process such as affixing or engraving a nameplate later, contamination of the electron source emission substrate due to contamination during the work or dust in the air The performance of may not be maintained. However, in the present invention, since such a manufacturing number can be given at the same time when the electron-emitting device group is formed, the same environment as that of forming the electron-emitting device group (generally, a clean room of class 100 to 1000) is maintained. Since such a step (a step of giving a serial number or the like) can be performed as it is, an electron source substrate having a very high performance can be manufactured without a problem such as contamination of the manufactured electron source substrate. In addition, since it is not necessary to perform engraving with another device afterward unlike the conventional case, it is very efficient and the manufacturing cost can be reduced.

FIG. 11 is a schematic plan view for explaining an electron source substrate and a method of manufacturing the same according to the present invention. In this embodiment, the surface conduction electron-emitting device group is formed outside the region where it is formed. , A pattern for performance check is formed, and the electron source substrate 10 includes a plurality of pairs of device electrodes 2 and 3 arranged on the substrate 10 and a space between each pair of device electrodes 2 and 3 as shown in the figure. An electron source substrate on which a surface conduction electron-emitting device group having a conductive thin film 4 formed by being jetted onto the surface of the electron source substrate is formed, and outside the regions X and Y where the surface conduction electron-emitting device group is formed. One pair or a plurality of pairs of device electrodes 2 and 3 are arranged on Xa, Xb, Ya, and Yb, and another surface conduction electron-emitting device using the conductive thin film 4 between each pair of device electrodes 2 and 3. Alternatively, the electron-emitting device group is replaced with the surface conduction electron-emitting device. It is obtained by forming for performance check of the element group.

In the manufacturing method, a plurality of pairs of element electrodes 2 and 3 are arranged on the substrate 10, and droplets of a solution containing the material of the conductive thin film 4 are jetted between the pair of element electrodes 2 and 3. A method of manufacturing an electron source substrate for forming a surface conduction electron-emitting device group by the conductive thin film 4, comprising: outside Xa of regions X, Y where the surface conduction electron-emitting device group is formed;
A pair or a plurality of pairs of element electrodes 2 and 3 are arranged on Xb, Ya and Yb, and a droplet of a solution containing the material of the conductive thin film 4 is jetted between the pair of element electrodes 2 and 3. By doing so, another surface-conduction type electron-emitting device or electron-emitting device group for checking the performance of the surface-conduction type electron-emitting device group is formed.

Similar to FIG. 10 described above, FIG. 11 shows an electron-emitting device group formed by applying four liquid drops in the vertical direction (sub-scanning direction) between the device electrodes 2 and 3. The invention provides a small space outside the region Xa which is the electron emission device group formation region, the region Xa other than the region Y, the region Xb, the region Ya, the region Yb, that is, outside the electron emission device group formation region,
A plurality of similar pairs of device electrodes are formed there as well, and by spraying droplets of a solution containing the material of the conductive thin film between the device electrodes, the same device electrodes and conductivity as those of the electron-emitting device are formed. In the illustrated embodiment, the pattern of the device electrode and the conductive thin film is provided at four positions.

As described above, the reason for forming the pattern of the device electrode and the conductive thin film similar to the electron-emitting device on the outside of the electron-emitting device group forming region is that the device when the electron-emitting region is formed by the forming process described later. This is because the function of is checked using this pattern. Although it is certain that all the formed electron-emitting devices are checked, it takes a very long time and the cost becomes very high. However, in the present invention, such a check-dedicated pattern is provided and not all elements are checked, but this pattern is used for checking, so that the check is completed in a short time. What is checked is, for example, the current that flows when a voltage is applied between the electrodes of the pattern after the energization forming process is completed.

In this example, the check pattern has been described as an example of the same element as the electron-emitting element group, but it is not always necessary to make it exactly the same, and it is a simplified pattern as a check-only pattern. May be.
Also, the number does not necessarily have to be four. However,
Rather than forming a check pattern at only one place and checking, it is better to form such check patterns at the four corners and then check as in this example, to check the performance of a large-area board. Is. Especially 200 mm ×
In the case of an electron source substrate smaller than about 200 mm, only one place is required, but for substrates larger than 200 mm, a plurality of check patterns should be arranged in a dispersed manner in order to ensure a certain quality of the entire substrate over a wide range. Is desirable. The reason for providing such a check pattern is to check whether or not a plurality of elements manufactured over a wide area are formed uniformly regardless of location.

As is clear from the above description, the electron source substrate of the present invention is manufactured by jetting droplets of a solution containing the material of the conductive thin film between a plurality of pairs of device electrodes on the substrate. However, the electron source substrate is configured to be slightly larger than the area where the surface conduction electron-emitting device group is formed, and droplets of such a solution can be jetted and applied to the outside of that area to form various patterns. The substrate and the method and apparatus for manufacturing the substrate are also the manufacturing method and apparatus capable of spraying droplets of the solution to the outside of the region. Then, after the droplets of the solution containing the material of the conductive thin film are jetted and applied in this way, in the present invention, the electron emitting portion 5 is formed by the forming process described below (see FIGS. 1 and 2). .

The electron-emitting portion 5 is composed of a crack having a high resistance formed in a part of the conductive thin film 4, and depends on the film thickness, film quality, material, etc. of the conductive thin film 4 or forming processing conditions. Becomes Inside the electron emitting portion 5, 10
In some cases, conductive fine particles having a particle size of 00 Å or less are included. The conductive fine particles contain some or all of the elements of the material forming the conductive thin film 4. The electron emitting portion 5 and the conductive thin film 4 in the vicinity thereof may contain carbon or a carbon compound.

As an example of a forming treatment method applied to the conductive thin film 4, a method of energizing treatment will be described. When electricity is applied between the device electrodes 2 and 3 by using a power source (not shown), the electron-emitting portion 5 having a changed structure is formed at the site of the conductive thin film 4.
Is formed. That is, according to the energization forming, a region having a structural change such as destruction, deformation or alteration locally is formed in the conductive thin film 4, and this region becomes the electron emitting portion 5.

FIG. 13 is a diagram showing an example of the voltage waveform of the energization forming process as described above applied to the present invention. A pulse waveform is particularly preferable as the voltage waveform, and when a voltage pulse having a constant pulse peak value is continuously applied (see FIG. 13).
(A)) and a case of applying a voltage pulse while increasing the pulse crest value (FIG. 13 (B)). First, the case where the pulse peak value is a constant voltage (FIG. 13A) will be described.

In FIG. 13A, T1 and T2 are the pulse width and pulse interval of the voltage waveform, respectively.
The peak value of the triangular wave (peak voltage during energization forming) is appropriately selected according to the form of the surface conduction electron-emitting device, with μs to 10 ms and T2 set to 10 μs to 100 ms. Under such conditions, for example, the voltage is applied for several seconds to several tens of minutes. The pulse waveform is not limited to the triangular wave, and a desired waveform such as a rectangular wave may be used.

Similar to the one shown in FIG. 13A, T1 and T2 in FIG. 13B indicate the pulse width and pulse interval of the voltage waveform, respectively, and the peak value of the triangular wave (peak voltage during energization forming). Can be increased in steps of, for example, 0.1V.

The end of the energization forming process can be detected by applying a voltage that does not locally break or deform the conductive thin film 4 during the pulse interval T2 and measure the current. For example, the device current flowing by applying a voltage of about 0.1 V is measured, the resistance value is obtained, and the energization forming is terminated when a resistance of 1 MΩ or more is shown.

It is desirable to perform a process called an activation process on the element which has completed the energization forming. By performing the activation process, the device current If and the emission current Ie are significantly changed. The activation step can be performed, for example, in an atmosphere containing a gas of an organic substance, by repeating application of a pulse, similarly to the energization forming. The above-mentioned atmosphere can be formed by using the organic gas remaining in the atmosphere when the inside of the vacuum container is discarded by using, for example, an oil diffusion pump or a rotary pump. It can also be obtained by introducing a gas of an appropriate organic substance into the vacuum. The preferable gas pressure of the organic substance at this time is different depending on the form of application, the shape of the vacuum container, the type of the organic substance, and the like, and is appropriately set depending on the case.

Examples of the above-mentioned organic substances include organic hydrocarbons such as alkanes, alkenes, alkyne aliphatic hydrocarbons, aromatic hydrocarbons, alcohols, aldehydes, ketones, amines, phenols, carboxylic acids and sulfonic acids. Acids and the like are preferable, and specifically, saturated hydrocarbons represented by C _n H _{2n + 2} such as methane, ethane and propane, unsaturated hydrocarbons represented by a composition formula such as C _n H _2n such as ethylene and propylene. , Benzene, toluene, methanol, formaldehyde, acetaldehyde, acetone, methyl ethyl ketone, methyl amine, ethyl amine, phenol, formic acid,
Acetic acid, propionic acid, etc. can be used. By this treatment, carbon or a carbon compound is deposited on the device from the organic substance existing in the atmosphere, and the device current If and the emission current Ie change remarkably. The termination of the activation process is determined while measuring the device current If and the emission current Ie. The pulse width, pulse interval, pulse peak value, etc. are set appropriately.

Carbon or a carbon compound means graphite (both single crystal and polycrystal), amorphous carbon (amorphous carbon and carbon containing a mixture of amorphous carbon and fine crystals of the graphite). The film thickness is preferably 500 Å or less, more preferably 3
It is less than 00Å.

The electron-emitting device thus produced is preferably subjected to a stabilizing treatment. This treatment is preferably carried out when the partial pressure of the organic substance in the vacuum container is 1 × 10 ⁻⁸ Torr or less, preferably 1 × 10 ⁻¹⁰ Torr or less. The pressure in the vacuum container is preferably 10 ⁻⁶ to 10 ⁻⁷ Torr or less, and particularly preferably 1 × 10 ⁻⁸ Torr or less. It is preferable to use a vacuum evacuation device that evacuates the vacuum container without using oil so that the oil generated from the device does not affect the characteristics of the element. Specifically, a vacuum evacuation device such as a sorption pump or an ion pump can be used. Further, when the inside of the vacuum container is evacuated, it is preferable that the entire vacuum container is overheated so that organic substance molecules adsorbed on the inner wall of the vacuum container and the electron-emitting device can be easily exhausted. At this time, the vacuum evacuation condition in the heated state is preferably 80 to 200 ° C. for 5 hours or more, but is not particularly limited to this condition, and various conditions such as the size and shape of the vacuum container and the configuration of the electron-emitting device. It changes with.

The partial pressure of the organic substance is obtained by measuring the partial pressure of the organic molecule having a mass number of 10 to 200 and having carbon and hydrogen as the main components by a mass spectrometer and integrating the partial pressures. Desired. After the stabilization process, the atmosphere during driving is preferably maintained at the end of the stabilization process, but the present invention is not limited to this, and if the organic substance is sufficiently removed, the degree of vacuum itself is It is possible to maintain sufficiently stable characteristics even if it is lowered to some extent. By adopting such a vacuum atmosphere, the deposition of new carbon or carbon compound can be suppressed, and as a result, the device current If and the emission current Ie are stabilized.

Next, the image display device of the present invention will be described. An image display device according to an embodiment of the present invention includes an electron source substrate 10 according to some of the above-described embodiments, and a face plate (a plate described later) that is arranged so as to face the electron source substrate 10 and has a phosphor mounted thereon. 76).

Various arrangements of electron-emitting devices on the electron source substrate used for the image display device can be adopted. First, a large number of electron-emitting devices arranged in parallel are individually connected at both ends, a large number of rows of electron-emitting devices are arranged (called a row direction), and electrons are arranged in a direction orthogonal to this wiring (called a column direction). There is a ladder-like arrangement in which control electrodes (also referred to as grids) arranged above the emission elements control and drive the electrons from the electron emission elements. Separately, a plurality of electron-emitting devices are arranged in a matrix in the X and Y directions, and one of the electrodes of the plurality of electron-emitting devices arranged in the same row is commonly connected to a wiring in the X direction. For example, the other of the electrodes of the plurality of electron-emitting devices arranged in the same column is commonly connected to the wiring in the Y direction. This is a so-called simple matrix arrangement. First, the simple matrix arrangement will be described in detail below.

FIG. 14 is a diagram showing an example of an electron source substrate obtained by arranging a plurality of electron-emitting devices of the present invention in a matrix form. In the figure, 10 is an electron source substrate, 14 is a substrate, and 61 is a substrate.
Is an X-direction wiring, 62 is a Y-direction wiring, 63 is a surface conduction electron-emitting device, and 64 is a connection. X direction wiring 61 is D
It consists of m wires of X1, DX2, ... DXm, and Y
The directional wiring 62 is composed of n wirings DY1, DY2, ... DYn. Further, the material, the film thickness, and the wiring width are appropriately set so that a substantially uniform voltage is supplied to the large number of surface conduction elements 63. These m X-direction wirings 61 and n Ys
The directional wirings 62 are electrically separated by an interlayer insulating layer (not shown) to form a matrix wiring (the above-mentioned m,
n are both positive integers).

The interlayer insulating layer (not shown) is formed on the entire surface of the substrate 14 on which the X-direction wiring 61 is formed or in a desired portion thereof. The X-direction wiring 61 and the Y-direction wiring 62 are drawn out as external terminals. Further, the device electrodes (not shown) of the surface conduction electron-emitting device 63 are electrically connected to the m X-direction wirings 61 and the n Y-direction wirings 62 by connection lines 64. The material forming the X-direction wiring 61 and the Y-direction wiring 62, the material forming the connecting wire 64, and the material forming the pair of element electrodes may be the same or different in some or all of the constituent elements. May be. These materials are appropriately selected, for example, from the above-mentioned material for the device electrode. When the material forming the element electrode and the wiring material are the same, the wiring connected to the element electrode can also be referred to as an element electrode.

The X-direction wiring 61 is electrically connected to a scan signal generating means (not shown) for applying a scan signal for scanning the row of the surface conduction electron-emitting devices 63 arranged in the X direction according to the input signal. ing. On the other hand, the Y-direction wiring 62 is electrically connected to a modulation signal generating means (not shown) for applying a modulation signal that modulates each column of the surface conduction electron-emitting devices 63 arranged in the Y direction according to an input signal. ing. Further, the drive voltage applied to each element of the surface conduction electron-emitting device 63 is supplied as a difference voltage between the scanning signal and the modulation signal applied to the element. As a result, individual elements can be selected and driven independently with simple matrix wiring.

Next, an image display device using the electron source of the simple matrix arrangement created as described above will be described. FIG. 15 is a diagram for explaining an example of the basic configuration of the display panel of the image display device. In the figure, 10 is an electron source substrate on which the electron-emitting device 63 is formed, and 71 is the electron source substrate 10 fixed. Rear plate, 72 is a support frame, and 76 is a fluorescent film 74 and a metal back 75 on the inner surface of the glass substrate 73.
The rear plate 7 is a face plate formed with
1. Frit glass or the like is applied to the support frame 72 and the face plate 76, and 400 to 50 in the air or nitrogen.
The envelope 78 is configured by sealing by firing at 0 ° C. for 10 minutes or more. In FIG. 15, 63 is an electron-emitting device corresponding to the configuration shown in FIG. 1, and 61 and 62 are X-direction wiring and Y-direction wiring connected to a pair of device electrodes of the surface conduction electron-emitting device, respectively. is there.

The envelope 78 is composed of the face plate 76, the support frame 72, and the rear plate 71 as described above. The rear plate 71 is provided mainly for the purpose of reinforcing the strength of the electron source substrate 10, so that the electron If the source substrate 10 itself has sufficient strength, the separate rear plate 71 is not necessary, and the support frame 71 is directly sealed to the electron source substrate 10, and the face plate 76, the support frame 72 and the electron source substrate 10 are attached. The envelope 78 may be configured as a unit. Furthermore, by installing an atmospheric pressure resistant supporting member called a spacer between the face plate 76 and the rear plate 71, it is possible to configure the envelope 78 having sufficient strength against atmospheric pressure.

FIG. 16 is a schematic view showing an example of the structure of the fluorescent film used in the image display device of FIG. 15. The black stripe type fluorescent film is shown in FIG. 16A and the black matrix type fluorescent film is shown in FIG. It is shown in (B).
In FIG. 16, 74 is a fluorescent film, 81 is a black conductive material, 8
2 is a phosphor.

In the case of monochrome, the fluorescent film 74 is composed of only the phosphor, but in the case of a color fluorescent film, it is composed of a black conductive material 81 and a phosphor 82 called a black stripe or a black matrix depending on the arrangement of the phosphors. Composed. In the case of color display, the purpose of providing the black stripes and the black matrix is to make the mixed portions between the respective phosphors 82 of the three primary color phosphors black so as to make the color mixture inconspicuous, and to prevent the external appearance of the phosphor film 74. This is to suppress a decrease in contrast due to light reflection. The material of the black stripe is not limited to the commonly used material containing graphite as a main component, but is not limited to this as long as it is a material having conductivity and little light transmission and reflection.

In the present invention, the directions of the stripes of the fluorescent material 82 matrixed as described above, or the two directions of the matrix that are orthogonal to each other, and the two directions of the electron-emitting device 63 that are orthogonal to each other are parallel to each other. And the phosphors 82 are positioned and laminated so that the phosphors 82 are aligned with the electron-emitting devices 63 to form an image display device. In the image display device having such a configuration, since the directions of the matrixes and the positions thereof are the same,
An image display device with extremely high image quality can be realized.

As a method of applying the phosphor to the glass substrate 73, a precipitation method or a printing method is used regardless of monochrome or color. A metal back 75 is usually provided on the inner surface side of the fluorescent film 74 (FIG. 15). Metal back 7
Numeral 5 improves the brightness by specularly reflecting the light to the inner surface side of the light emitted from the phosphor to the face plate 76 side, acts as an electrode for applying an electron beam acceleration voltage, and the inside of the envelope. It has a role of protecting the phosphor from the damage caused by the collision of negative ions generated in 1. The metal back 75, after forming the fluorescent film 74, smoothes the inner surface of the fluorescent film 74 (usually called filming).
And then depositing Al by vacuum evaporation or the like. Further, the face plate 76 may be provided with a transparent electrode (not shown) on the outer surface side of the fluorescent film 74 in order to further increase the conductivity of the fluorescent film 74.

When performing sealing for forming the envelope 78 described above, in the case of a color, the phosphors 82 of the respective colors and the electron-emitting devices 63 must correspond to each other, and sufficient alignment is required. There is. In order to perform this sufficient alignment, in the present invention, as described above, the phosphor 82 is arranged at the position facing the electron-emitting device 63, and the electron-emitting device 6 is provided.
The three directions of the matrix of the phosphor 3 and the matrix of the phosphor 82 are orthogonal to each other.
In order to obtain a highly accurate image display device having such a configuration, it is desirable that the phosphor substrate also adopts a positioning method similar to that of the electron source substrate of the present invention.

The image display device shown in FIG. 15 is specifically manufactured as follows. Similar to the stabilization process described above, the envelope 78 is evacuated through an exhaust pipe (not shown) by an exhaust device that does not use oil, such as an ion pump and a sorption pump, while appropriately heating, and a vacuum degree of about 10 ^-7 Torr. After the atmosphere of the organic substance is sufficiently small, it is sealed. A getter process may be performed to maintain the degree of vacuum after the envelope 78 is sealed. This is performed by heating the getter placed at a predetermined position (not shown) in the envelope 78 by a heating method such as resistance heating or high frequency heating immediately before or after the envelope 78 is sealed and vapor deposition. This is a process for forming a film. The getter usually has Ba as a main component, and is, for example, 1 × 10 ⁻⁵ Tor due to the adsorption action of the deposited film.
The degree of vacuum of r to 1 × 10 ⁻⁷ Torr is maintained.

Next, the display panel constructed by using the electron source having the simple matrix arrangement type substrate is driven to drive the NTS.
A schematic configuration of a drive circuit for performing television display based on a C system television signal will be described. Figure 17 is NTSC
FIG. 2 is a block diagram showing an example of a drive circuit for performing display in accordance with a television signal of a system, and shows an image display device including the drive circuit. In FIG. 17, 91 is an image display panel, 92 is a scanning circuit, 93 is a control circuit, 94 is a shift register, 95 is a line memory, 96 is a sync signal separation circuit, 97 is a modulation signal generator, and Vx and Va are DC. It is a voltage source.

The function of each section shown in FIG. 17 will be described below. The display panel 91 is connected to an external electric circuit via terminals Dox1 to Doxm, terminals Doy1 to Doyn, and a high voltage terminal Hv. Of these, the terminal Dox1
To Doxm, an electron source provided in the display panel 91, that is, a group of surface conduction electron-emitting devices that are matrix-wired in a matrix of M rows and N columns is sequentially driven row by row (N elements). A scanning signal is applied. on the other hand,
A modulation signal for controlling the output electron beam of each element of the surface conduction electron-emitting devices of one row selected by the scanning signal is applied to the terminals Doy1 to Doyn.
Further, the high voltage terminal Hv receives, for example, 10 from the DC voltage source Va.
A DC voltage of kV is supplied, which is an accelerating voltage for giving enough energy to excite the phosphor to the electron beam output from the surface conduction electron-emitting device.

Next, the scanning circuit 92 will be described. The circuit is provided with M switching elements inside (schematically shown by S1 to Sm in the figure), and each switching element is the output voltage of the DC voltage source Vx or 0V.
One of (ground level) is selected and electrically connected to the terminals Dox1 to Doxm of the display panel 91. Each of the switching elements S1 to Sm operates based on the control signal Tscan output from the control circuit 93, but can actually be configured by combining switching elements such as FETs. The DC voltage source Vx has characteristics of the surface conduction electron-emitting device (electron emission threshold voltage).
Based on the above, it is set to output a constant voltage such that the drive voltage applied to the non-scanned element is equal to or lower than the electron emission threshold voltage.

The control circuit 93 has a function of matching the operation of each part so that an appropriate display is performed based on an image signal input from the outside. Based on the sync signal Tsync sent from the sync signal separation circuit 96 described later, Tscan, Tsft, and Tmr are applied to the respective units.
Each control signal of y is generated.

The sync signal separation circuit 96 is a circuit for separating the sync signal component and the luminance signal component from the NTSC system television signal input from the outside, and can be constructed by using a frequency separation (filter) circuit. The sync signal separated by the sync signal separation circuit 96 is composed of a vertical sync signal and a horizontal sync signal, as is well known, but it is shown here as a Tsync signal for convenience of description. On the other hand, the luminance signal component of the image separated from the television signal is referred to as a DATA signal for the sake of convenience.
Entered in.

The shift register 94 is for serial / parallel conversion of the DATA signals serially input in time series for each line of the image, and based on the control signal Tsft sent from the control circuit 93. Operate. That is, the control signal Tsft is output to the shift register 94.
It may be paraphrased as the shift clock of the above. One line of serial / parallel converted image (electron emitting device N
The data (corresponding to drive data for the elements) is output from the shift register 94 as N parallel signals Id1 to Idn.

The line memory 95 is a storage device for storing data for one line of an image for a required time, and stores the contents of Id1 to Idn as appropriate in accordance with the control signal Tmry sent from the control circuit 93. The stored contents are output as Id'1 to Id'n and input to the modulation signal generator 97.

The modulation signal generator 97 outputs the image data I
It is a signal source for appropriately driving and modulating each of the surface conduction electron-emitting devices according to each of d1 to Idn, and its output signal is output to the surface conduction electron emission devices in the display panel 91 through terminals Doy1 to Doyn. Is applied.

As described above, the electron-emitting device according to the present invention has the following basic characteristics with respect to the emission current Ie. That is, as described above, electron emission has a clear threshold voltage Vth, and electron emission occurs only when a voltage equal to or higher than Vth is applied. Further, for a voltage equal to or higher than the electron emission threshold value, the emission current also changes according to the change in the voltage applied to the element. The electron emission threshold voltage Vth can be changed by changing the material, structure, and manufacturing method of the electron emission element.
There is a case where the value of V and the degree of change of the emission current with respect to the applied voltage change, but in any case, the following can be said.

That is, when a pulsed voltage is applied to this element, for example, when a voltage below the electron emission threshold is applied, no electron emission occurs, but when a voltage above the electron emission threshold is applied. An electron beam is output to. At that time, first, it is possible to control the intensity of the output electron beam by changing the peak value Vm of the pulse.
Second, it is possible to control the total amount of charges of the electron beam output by changing the pulse width Pw.

Therefore, as a method of modulating the electron-emitting device in accordance with the input signal, there are a voltage modulation method, a pulse width modulation method and the like. To implement the voltage modulation method, the modulation signal generator 97 is set to a constant value. A voltage-modulation circuit is used to generate a voltage pulse having a length of, but to appropriately modulate the peak value of the pulse according to the input data. Further, in order to implement the pulse width modulation method, the modulation signal generator 97 generates a voltage pulse having a constant crest value, but a pulse width that appropriately modulates the width of the voltage pulse according to the input data. Modulation circuit is used.

The shift register 94 and the line memory 95
May be of a digital signal type or an analog signal type as long as the serial / parallel conversion and storage of the image signal are performed at a predetermined speed.

When using the digital signal type,
It is necessary to convert the output signal DATA of the sync signal separation circuit 96 into a digital signal, but this is possible if the output section of the sync signal separation circuit 96 is equipped with an A / D converter. Further, in connection with this, the circuit used for the modulation signal generator 97 is slightly different depending on whether the output signal of the line memory 95 is a digital signal or an analog signal.

First, the case of digital signals will be described.
In the voltage modulation method, for example, a well-known D / A conversion circuit may be used as the modulation signal generator 97, and an amplification circuit or the like may be added as necessary. In the case of the pulse width modulation method, the modulation signal generator 97 is, for example, a high speed oscillator,
A counter that counts the number of waves output by the oscillator,
Also, it can be configured by using a circuit in which a comparator (comparator) that compares the output value of the counter and the output value of the line memory 95 is combined. If necessary, an amplifier for voltage-amplifying the pulse-width-modulated modulation signal output from the comparator up to the drive voltage of the surface conduction electron-emitting device may be added.

Next, the case of an analog signal will be described.
In the voltage modulation method, for example, a well-known amplifier circuit using an operational amplifier may be used as the modulation signal generator 97, and a level shift circuit or the like may be added if necessary. In the case of the pulse width modulation method, for example, a well-known voltage control type oscillation circuit (VCO) may be used, and if necessary, an amplifier for amplifying the voltage up to the driving voltage of the surface conduction electron-emitting device may be used. May be added.

In the image display device having the above-described structure, each of the electron-emitting devices of the display panel 91 has terminals outside the container Dox1 to Doxm, Doy1 to Doyn.
Through the high voltage terminal Hv, a high voltage is applied to the metal back 75 or the transparent electrode (not shown) to accelerate the electron beam and cause it to collide with the fluorescent film 74 for excitation. An image can be displayed by emitting light.

The structure described here is a schematic structure necessary for manufacturing a suitable image display device used for display or the like, and the detailed parts such as the material of each member are not limited to the above contents. Instead, it is appropriately selected to suit the application of the image display device. Also, although the NTSC system is given as an example of the input signal, the input signal is not limited to this, and PAL, SECA
Various methods such as the M method may be used, or a TV signal (for example, a high-definition TV such as the MUSE method) including a number of scanning lines may be used.

Next, the ladder type electron source substrate and the image display device will be described. FIG. 18 is a schematic diagram showing a configuration example of an electron source substrate in which electron emitting devices are arranged in a ladder shape. In the figure, 10 is an electron source substrate, 14 is a substrate, 63 is an electron emitting device, and 98 is an electron emitting device 63. Dx1 to Dx1 connected to
It is a common wiring consisting of 0s. A plurality of electron-emitting devices 63 are arranged in parallel in the X direction on the substrate 14 (this array is called a device row). The electron source substrate 10 is configured by arranging a plurality of this element rows on the substrate. By applying a drive voltage between the common lines of each element row, each element row can be driven independently. That is, a voltage equal to or higher than the electron emission threshold value may be applied to the element row where the electron beam is desired to be emitted, and a voltage equal to or lower than the electron emission threshold value may be applied to the element row where the electron beam is not to be emitted. Further, the common wirings Dx2 to Dx9 between the element rows, for example, Dx2 and Dx3 may be the same wiring.

FIG. 19 is a view for explaining a panel structure in an image display device provided with a ladder-type arrangement electron source substrate as shown in FIG. 18, in which 100 is a common wiring between each element row and the same wiring. Electron source substrate, 101 is a grid electrode, 102 is an opening for passing electrons, and 103 is D
ox1, Dox2, ... Doxm external terminals, 104 are G1 and G connected to the grid electrode 101
2, ... Gn external terminal of container, other
Alternatively, parts having the same functions as those in FIG. 18 are denoted by the same reference numerals. The image display device shown in FIG. 19 differs from the image display device having the simple matrix arrangement (FIG. 15) described above in that the grid electrode 101 is provided between the electron source substrate 100 and the face plate 76.

The grid electrode 101 is for modulating the electron beam emitted from the surface conduction electron-emitting device, and passes the electron beam through a striped electrode provided orthogonally to the ladder-type arrangement of element rows. For this reason, one circular opening 102 is provided for each element. The shape and installation position of the grid are not limited to those shown in FIG. For example, a large number of passage openings may be provided in the form of a mesh as openings, and the grid may be provided around or near the surface conduction electron-emitting device. In addition, the terminal 103 outside the container and the terminal 104 outside the grid container
Are electrically connected to a control circuit (not shown).

In this image display device, a modulation signal for one line of an image is simultaneously applied to the grid electrode column in synchronization with the sequential driving (scanning) of the element rows one column at a time. This controls the irradiation of each electron beam on the phosphor, and
Can be displayed line by line. According to this, it can be used not only as a display device for a television broadcast, a video conference system, a display device such as a computer, but also as an image display device as an optical printer configured by using a photosensitive drum.

FIG. 12 is a schematic plan view showing the structure of the electron source substrate according to one embodiment of the present invention. The second surface is located outside the region where the surface conduction electron-emitting device group is formed. It is a figure which shows the example which formed the conduction electron-emitting device group.
The electron source substrate used in the present invention is, as described above, a droplet of a solution containing the material of the conductive thin film in a region (outer) wider than the region where the surface conduction electron-emitting device group is formed. Is sprayed and applied, and a surface conduction type electronic element made of a conductive thin film can be formed.

The image display device of this embodiment is formed by jetting a conductive solution between a plurality of pairs of element electrodes 2 and 3 arranged on a substrate and each pair of element electrodes 2 and 3. An electron source substrate 10, 100 in which a surface conduction electron-emitting device group having a conductive thin film 4 is formed, and the plurality of pairs of the plurality of pairs are provided outside an area in which the surface conduction electron-emitting device group is formed. A second plurality of pairs of element electrodes different from the element electrodes are arranged, and a droplet of a conductive solution is jetted and applied between the second plurality of pairs of element electrodes 2 and 3 to form a first thin film by the conductive thin film 4. 2. An image display device comprising: electron source substrates 10 and 100 on which the surface conduction electron-emitting device group 2 is formed; and a face plate 76, which is arranged so as to face the electron source substrates and has a phosphor mounted thereon. The second surface conduction electron-emitting device group as an electron source substrate By performing display in the image display apparatus is driven by the input different signals information for each 10,100, it is obtained by a distinguishable the image display device for each image display device.

That is, in addition to the surface-conduction electron device group used for the original image display, the second surface-conduction electron-emitting device group is further formed in the outer region of the electron source substrate. The example is shown in FIG. 12, but in this example, the second surface conduction electron-emitting device group is formed in the region Ya.

According to the present invention, the second surface conduction electron-emitting device group is thus formed, and such an electron source substrate and a face plate which is arranged so as to face the electron source substrate and has a phosphor mounted thereon. And an image display device having. By inputting signal information to the second surface conduction electron-emitting device group and driving it, image display can be performed even in the region of the second surface conduction electron-emitting device group.

Therefore, the signal information input to the second surface conduction electron-emitting device group may be made different for each completed image display device, for example, the manufacturing number may be displayed for each image display device, or By changing the display color for each manufacturing lot, the image display device after manufacturing can be easily distinguished. In particular, by displaying the manufacturing number as an image, there is no need to engrave with another device afterwards as in the conventional case, which is very efficient.

In the above description, an example in which the second surface conduction electron-emitting device group is provided separately from the original surface conduction electron-emitting device group has been described, but they are not particularly distinguished. A signal may be input to the surface conduction electron-emitting device group by switching the display signal from the original display signal and changing the display color for each manufacturing lot or displaying the manufacturing number. Alternatively, the display may be changed at the same time as the original display, and the display color may be changed for each production lot and the production number may be displayed.

[0119]

EFFECTS OF THE INVENTION Corresponding to claims 1 and 2 : A droplet of a solution containing a material of a conductive thin film is jetted and applied,
In an electron source substrate in which a surface conduction electron-emitting device group is formed by a conductive thin film, a droplet of a solution containing the material of the conductive thin film is outside the region where the surface conduction electron-emitting device group is formed. The pattern and manufacturing date that makes it possible to distinguish the electron source substrate for each substrate by applying
A manufacturing number (serial number) and the like can be formed, and the electron source substrate after manufacturing can be easily distinguished. Further, by forming a distinguishable pattern or the like for each of a plurality of substrate groups, it is possible to distinguish each lot to be manufactured. In particular, since the production number can be applied simultaneously with the formation of the surface conduction electron-emitting device group by ejecting a droplet of a solution, there is no need to engrave with another device afterwards as in the conventional method, which is very efficient. Good. Further, when engraving with another device later as in the conventional case, there was a problem such as contamination, but in the present invention, there is no fear of it because it can be performed simultaneously with the formation of the surface conduction electron-emitting device group. A high-performance electron source substrate can be manufactured.

[0120]

[0121]

[0122]

Effect corresponding to claim 3 : A droplet of a solution containing a material of a conductive thin film is jetted and applied between a plurality of pairs of device electrodes on a substrate, and the surface conduction electron emission by the conductive thin film. In the electron source substrate having the element group formed thereon, a second plurality of pair of element electrodes different from the element electrodes are provided outside the region where the surface conduction electron-emitting device group is formed, and An electron source substrate in which a second surface conduction electron-emitting device group is formed by a conductive thin film by jetting and applying a droplet of a conductive solution between a plurality of paired device electrodes of 2. In an image display device having the electron source substrate and a face plate that is arranged to face the electron source substrate and has a phosphor mounted thereon, the second surface conduction electron-emitting device group is different for each electron source substrate. Drive by inputting signal information However, since the images are displayed on the image display device and the image display devices can be distinguished for each image display device, a pattern, a manufacturing number (serial number), or the like that can be distinguished for each image display device after manufacturing is displayed as an image. It can be displayed, and the image display device after manufacturing can be easily distinguished. In particular, by displaying the manufacturing number as an image, there is no need to engrave with another device afterwards as in the conventional case, which is very efficient.

[Brief description of drawings]

FIG. 1 is a schematic diagram showing a configuration of a planar surface conduction electron-emitting device according to an embodiment of the present invention.

FIG. 2 is a schematic diagram for explaining a method of manufacturing the flat surface-conduction type electron-emitting device shown in FIG.

FIG. 3 is a configuration diagram showing an example of an electron source substrate manufacturing apparatus according to an embodiment of the present invention.

FIG. 4 is a diagram for explaining an example of the configuration of a droplet deposition device relating to the electron source substrate manufacturing apparatus according to the present invention.

5 is a schematic configuration diagram of a main part of an ejection head unit of the droplet applying device of FIG.

FIG. 6 is a schematic plan view for explaining an example in which the electron-emitting device portion is formed by one droplet.

FIG. 7 is a schematic plan view showing an example of a dot pattern of a planar surface conduction electron-emitting device formed according to the present invention.

FIG. 8 is a schematic plan view showing an example of another dot pattern of a flat surface conduction electron-emitting device formed according to the present invention.

FIG. 9 is a diagram showing a configuration example of an ejection head used in the apparatus for manufacturing a surface conduction electron-emitting device according to the present invention.

FIG. 10 is a schematic plan view for explaining an electron source substrate and a method for manufacturing the same according to the present invention, in which a spray application pattern of a solution is formed outside a region where a surface conduction electron-emitting device group is formed. It is a figure which shows the formed example.

FIG. 11 is a schematic plan view for explaining the electron source substrate and the method for manufacturing the same according to the present invention, in which a pattern for performance check is provided outside the region where the surface conduction electron-emitting device group is formed. It is a figure which shows the example which formed.

FIG. 12 is a schematic plan view for explaining an electron source substrate and a method for manufacturing the same according to the present invention, in which a second surface conduction type is provided outside an area where a surface conduction type electron-emitting device group is formed. It is a figure which shows the example which formed the electron emission element group.

FIG. 13 is a diagram showing an example of a voltage waveform in an energization forming process which can be adopted for manufacturing the surface conduction electron-emitting device according to the present invention.

FIG. 14 is a schematic view showing an example of a matrix arrangement type electron source substrate to which the present invention can be applied.

FIG. 15 is a diagram for explaining an example of a basic configuration of a display panel of an image display device using a matrix-arranged electron source substrate to which the present invention can be applied.

FIG. 16 is a schematic diagram showing a configuration example of a fluorescent film used in an image display device to which the present invention can be applied.

FIG. 17 is a block diagram showing an example of a drive circuit for displaying on an image display device according to an NTSC television signal.

FIG. 18 is a schematic view showing an example of a ladder type arrangement type electron source substrate to which the present invention can be applied.

FIG. 19 is a diagram for explaining an example of a basic configuration of a display panel of an image display device using a ladder-type layout type electron source substrate to which the present invention can be applied.

FIG. 20 is a schematic view showing an example of a conventional electron-emitting device.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Substrate, 2, 3 ... Element electrode, 4 ... Conductive thin film, 5 ... Electron emission part, 10 ... Electron source substrate, 11 ... Ejection head unit (ejection head), 12 ... Carriage, 13 ... Substrate holding stand, 14 ... substrate, 15 ... supply tube, 16 ... signal supply cable, 17 ... jet head control box, 1
8 ... X-direction scan motor of carriage 12, 19 ... Y-direction scan motor of carriage 12, 20 ... Computer, 21 ... Control box, 22 (22X1,
22Y1, 22X2, 22Y2) ... Substrate positioning / holding means, 30 ... Ejection head unit, 31 ... Head alignment control mechanism, 32 ... Detection optical system, 33 ... Inkjet head, 34 ... Head alignment fine adjustment mechanism, 35
... control computer, 36 ... image identification mechanism, 37 ... XY
Direction scanning mechanism, 38 ... Position detection mechanism, 39 ... Position correction control mechanism, 40 ... Inkjet head drive / control mechanism,
41 ... Optical axis, 42 ... Droplet, 43 ... Droplet landing position, 44 ...
Dots by ejected droplets, 50 ... Ejection head (inkjet head), 51 ... Heating element substrate, 52 ... Lid substrate,
53 ... Silicon substrate, 54 ... Individual electrode, 55 ... Common electrode, 56 ... Heating element, 57 ... Solution inlet port, 58 ... Nozzle,
59 ... Groove portion, 60 ... Recessed region, 61 ... X-direction wiring, 62
... Y-direction wiring, 63 ... Surface conduction electron-emitting device, 64 ...
Connections, 71 ... Rear plate, 72 ... Support frame, 73 ... Glass substrate, 74 ... Fluorescent film, 75 ... Metal back, 76 ... Face plate, 78 ... Envelope, 81 ... Black conductive material, 8
2 ... Phosphor, 91 ... Image display panel, 92 ... Scanning circuit, 93 ... Control circuit, 94 ... Shift register, 95 ... Line memory, 96 ... Synchronous signal separation circuit, 97 ... Modulation signal generator, 98 ... Common wiring , 100 ... Electron source substrate, 101
... grid electrodes, 102 ... openings, 103, 104 ... terminals outside the container, Vx and Va ... DC voltage source.

Claims (3)

(57) [Claims] 1. A plurality of paired device electrodes are arranged on a substrate, and a droplet of a solution containing a material for the conductive thin film is jetted between each pair of device electrodes to provide surface conduction by the conductive thin film. A method of manufacturing an electron source substrate for forming a group of electron-emitters, wherein liquid droplets of a solution containing the material of the conductive thin film are formed outside the region where the surface-conduction electron-emitters are formed. A method for manufacturing an electron source substrate, which comprises forming a pattern that allows the electron source substrate manufactured by the method for manufacturing the electron source substrate to be distinguished for each substrate or for each of a plurality of substrate groups by applying the spray. 2. An electron forming a surface conduction electron-emitting device group having a plurality of pair of device electrodes arranged on a substrate and a conductive thin film formed by being sprayed between each pair of device electrodes. The electron source substrate, which is a source substrate and is formed by droplets of a solution containing the material of the conductive thin film sprayed and applied to the outside of the region where the surface conduction electron-emitting device group is formed. Alternatively, the electron source substrate is characterized in that a distinguishable pattern is formed for each of a plurality of substrate groups. 3. A surface conduction electron emission device having a plurality of pair of device electrodes arranged on a substrate and a conductive thin film formed by spraying a conductive solution between each pair of device electrodes. An electron source substrate on which an element group is formed, and a plurality of second pair of element electrodes different from the element electrode group are provided outside the region where the surface conduction electron-emitting element group is formed. And an electron source substrate on which a second surface conduction electron-emitting device group is formed by a conductive thin film by arranging and ejecting droplets of a conductive solution between the second plurality of device electrodes. An image display device having a face plate on which a phosphor is mounted, the face plate being arranged to face the electron source substrate, wherein the second surface conduction electron-emitting device group has different signal information for each electron source substrate. Input to drive and display on the image display device. An image display device, wherein the image display device can be distinguished for each image display device by performing.