JP3827320B2 - Manufacturing method of electron source substrate - Google Patents

Description

  The present invention relates to a method of manufacturing a substrate in which a plurality of electrodes arranged at intervals from each other and a plurality of thin films connected to different electrodes from each other are arranged. The substrate is, for example, an electron source substrate having a large number of electron-emitting devices arranged on the surface.

  Conventionally, two types of electron-emitting devices are known: a thermionic source and a cold cathode electron source. Cold cathode electron sources include field emission type (hereinafter referred to as FE type), metal / insulating layer / metal type (hereinafter referred to as MIM type), surface conduction type electron-emitting devices, and the like. Examples of the FE type include “WP Dyke & WW Dolan,“ Field emission ”, Advance in Electron Physics, 8 89 (1956)” or “CA Spindt,“ Physical Properties-of-the-Fed- cathodes with mollybdenium “J. Appl. Phys., 475248 (1976)” and the like are known. As an example of the MIM type, “CA Mead,“ The Tunnel-emission amplifier ”, J. Appl. Phys., 32 646 (1961)” and the like are known.

Examples of the surface conduction electron-emitting device type include “MI Elinson, Radio Eng. Electron Phys., 1290 (1965)”. The surface conduction electron-emitting device utilizes a phenomenon in which electron emission occurs when a current flows through a small-area thin film formed on a substrate in parallel to the film surface. As this surface conduction electron-emitting device, those using SnO ₂ thin film by Erinson et al., Those using Au thin film (“G. Dittmer:“ Thin Solid Films ”, 9 317 (1972))), In ₂ O ₃ / By SnO ₂ thin film (“M. Hartwell and CG Fonstad:“ IEEE Trans. ED Conf. ”, 519 (1975)), by carbon thin film (“ Hisa Araki et al .: Vacuum, Vol. 26, Vol. No. 1, page 22 (1983) ").

  As a typical device configuration of these surface conduction electron-emitting devices, the above-described M.P. The element structure of Hartwell is shown in FIG. In the figure, reference numeral 1 denotes a substrate. 4 is a conductive thin film made of a metal oxide thin film formed by sputtering in an H-shaped pattern, and the electron emission portion 5 is formed by an energization process called energization forming described later. In the figure, the element electrode interval L is set to 0.5 to 1 mm, and W ′ is set to 0.1 mm.

  Conventionally, in these surface conduction electron-emitting devices, it is common to form the electron-emitting portion 5 by applying an energization process called energization forming to the conductive thin film 4 in advance before performing electron emission. . In the energization forming, a DC voltage or a very slow rising voltage, for example, about 1 V / min is applied to both ends of the conductive thin film 4, and the conductive thin film 4 is locally broken, deformed, or altered, and electrically high. It is to form the electron emission portion 5 in a resistance state. In the electron emitting portion 5, a crack is generated in a part of the conductive thin film 4, and the electron is emitted from the vicinity of the crack. The surface conduction electron-emitting device subjected to the energization forming process emits electrons from the electron-emitting portion 5 by applying a voltage to the conductive thin film 4 and passing a current through the device.

The above-described surface conduction electron-emitting device has an advantage that a large number of devices can be formed over a large area because of its simple structure and easy manufacture. Therefore, applied researches on charged beam sources, display devices, etc. that take advantage of this feature have been made. As an example in which a large number of surface-conduction electron-emitting devices are arranged, surface-conduction electron-emitting devices are arranged in parallel, referred to as a trapezoidal arrangement as will be described later, and both ends of each element are wired (also called common wiring). And an electron source in which a number of connected lines are arranged (for example, Japanese Patent Laid-Open Nos. 64-31332, 1-283749, and 2-257552). In particular, in image forming apparatuses such as display devices, in recent years, flat-panel display devices using liquid crystals have been widely used in place of CRTs. However, since they are not self-luminous, there are problems such as having to have a backlight. Thus, development of a self-luminous display device has been desired. Examples of the self-luminous display device include an image forming apparatus that is a display device in which an electron source in which a large number of surface-conduction type emission elements are arranged and a phosphor that emits visible light by electrons emitted from the electron source. (For example, USP 5066883).
Japanese Patent Application Laid-Open No. 64-31332 Japanese Patent Laid-Open No. 1-283749 JP-A-2-257552 USP 5066883 “WP Dyke & WW Dolan,“ Field Emission ”, Advance in Electron Physics, 889 (1956)”. “CA Spindt,“ Physical Properties of Thin-Film Field Emission Cathodes with Mollybdenium, ”J. Appl. Phys., 475248 (1976)”. “C. A. Mead,“ The Tunnel-emission amplifier ”, J. Appl. Phys., 32 646 (1961)”. "MI Elinson, Radio Eng. Electron Phys., 1290 (1965)" “G. Dittmer:“ Thin SolidFilms ”, 9 317 (1972)”) “M. Hartwell and C. G. Fonstad:“ IEEE Trans. ED Conf. "519 (1975)" “Hiroshi Araki et al .: Vacuum, Vol. 26, No. 1, p. 22 (1983)”

  However, in the manufacturing method according to the above-described conventional example of the surface conduction electron-emitting device, the vacuum deposition and the photolithography / etching method in the semiconductor process are frequently used. In order to form the device over a large area, the number of steps is required. However, the production cost of the electron source substrate is high.

  Therefore, the present invention provides a method for manufacturing a substrate, particularly an electron source substrate having a surface conduction electron-emitting device having a large area, by using an ink-jet device for the conductive thin film of the element portion, using a vacuum film formation method and a photolithography etching method. Accordingly, it is an object of the present invention to enable stable formation with high yield, and thereby to manufacture an image forming apparatus having an electron source substrate at a low cost.

In order to solve the above problems, in the present invention, an ejection head unit having an inkjet head and a detection optical system that captures image information on a substrate surface, and image identification that identifies image information captured by the detection optical system A plurality of devices on a substrate using an inkjet apparatus including a device, a position detection mechanism that gives position information on the substrate to the obtained image information, and a position correction control mechanism that performs position correction based on the image information and the position information Production of an electron source substrate in which a conductive thin film is formed by applying a droplet of a solution containing a conductive thin film material between each pair of device electrodes , and a surface conduction electron-emitting device group is formed on the substrate a method, on a substrate, and the electrode arrangement step of arranging a plurality of the element electrodes, a solution of the material of the conductive thin film, using said ink jet apparatus, the multi disposed on the substrate A solution step of applying to each of the device electrodes, and the step of heat-treating the substrate on which the solution is applied by the solution applying step, and wherein the solution applying step, the plurality of element electrodes The position detection step for detecting each position information and the detection result of the position detection step so that the solution discharged from the ink jet head included in the ink jet device is applied to each of the plurality of element electrodes. And a position correction step of correcting a relative position between each of the plurality of element electrodes and the inkjet head.

According to the present invention, an electron source substrate is manufactured in which a plurality of element electrodes arranged at intervals and a plurality of conductive thin films that are separated from each other and connected to different element electrodes are arranged . At that time , position information of each of the plurality of element electrodes is detected, and a relative position between each of the plurality of element electrodes and the ink jet head is corrected . Therefore , even when each of the plurality of device electrodes is misaligned, the conductive thin film can be disposed at a good position, and the yield of manufacturing the electron source substrate can be improved. In particular, when a large number of conductive thin films are arranged on a large-area substrate, patterning can be performed at the same time as the film formation without using a photolithography etching method for the production of the conductive thin films . Thereby , the manufacturing process of an electron source board | substrate can be simplified and manufacturing cost can be reduced.

Next, preferred embodiments of the present invention will be described.
Here, an example of manufacturing an electron source substrate in which a number of surface conduction electron-emitting devices are arranged on a substrate will be described . The basic configuration of the surface conduction electron-emitting device is a planar type.

7A and 7B are schematic views showing the configuration of a planar surface conduction electron-emitting device according to an embodiment of the present invention. FIG. 7A is a plan view and FIG. 7B is a cross-sectional view thereof. . In FIG. 7, 1 is a substrate, 2 and 3 are element electrodes, 4 is a conductive thin film, and 5 is an electron emission portion. As the substrate 1, quartz glass, glass with reduced impurity content such as Na, blue plate glass, a glass substrate on which SiO ₂ is deposited, a ceramic substrate such as alumina, and the like can be used. As the material for the device electrodes 2 and 3, a general conductive material can be used. For example, a metal or alloy such as Ni, Cr, Au, Mo, W, Pt, Ti, Al, Cu, and Pd, Pd, As As appropriate from printed conductors composed of metals such as Ag, Au, RuO ₂ , Pd—Ag or metal oxides and glass, transparent conductors such as In ₂ O ₃ —SnO ₂ , semiconductor materials such as polysilicon, etc. Selected.

  The distance L between the device electrodes 2 and 3 is preferably in the range of several thousand angstroms to several hundreds of micrometers, more preferably 1 μm to 100 μm in consideration of the voltage applied between the device electrodes 2 and 3. Range. The length W2 of the device electrodes 2 and 3 is several micrometers to several hundred micrometers in consideration of the resistance value and electron emission characteristic of the electrodes, and the film thickness d of the device electrodes 2 and 3 is 100 angstroms to 1 It is in the micrometer range. The configuration is not limited to the configuration shown in FIG. 7, and the conductive thin film 4 and the device electrodes 2 and 3 may be formed on the substrate 1 in this order.

FIG. 8 shows a method for manufacturing a planar surface conduction electron-emitting device having the configuration shown in FIG.
The conductive thin film 4 is particularly preferably a fine particle film composed of fine particles in order to obtain good electron emission characteristics. The film thickness is step coverage to the device electrodes 2 and 3 and the resistance between the device electrodes 2 and 3. Although it is appropriately set depending on the value and energization forming conditions described later, it is preferably several angstroms to several thousand angstroms, particularly preferably 10 angstroms to 500 angstroms. The resistance value is a value of R _s of 10 2 to 10 7 ohms. R _s is a value that appears when the resistance R of a thin film having a thickness of t, a width of w, and a length of 1 is R = R _s (1 / w), and the resistivity of the thin film material is represented by ρ. Then, R _s = ρ / t. Here, the energization process is described as an example of the forming process. However, the forming process is not limited to this, and any method may be used as long as the film is cracked to form a high resistance state.

Examples of the material constituting the conductive thin film 4 include metals such as Pd, Pt, Ru, Ag, Au, Ti, In, Cu, Cr, Fe, Zn, Sn, Ta, W, and Pb, PdO, SnO ₂ , In Oxides such as ₂ O ₃ , PbO, Sb ₂ O ₃ , borides such as HfB ₂ , ZrB ₂ , LaB ₆ , CeB ₆ , YB ₄ , GdB ₄ , TiC, ZrC, HfC, TaC, SiC, WC, etc. It is appropriately selected from carbides, nitrides such as TiN, ZrN, and HfN, semiconductors such as Si and Ge, and carbon.

  The fine particle film described here is a film in which a plurality of fine particles are aggregated, and the fine structure is not only in a state where the fine particles are individually dispersed and arranged, but also in a state where the fine particles are adjacent to each other or overlap (some fine particles are aggregated). And the case where an island is formed as a whole). The particle size of the fine particles is several angstroms to 1 micrometer, preferably 10 angstroms to 200 angstroms.

Hereinafter, a method for forming a conductive thin film of a surface conduction electron-emitting device according to an embodiment of the present invention will be described.
FIG. 1 is a schematic diagram showing a configuration of a droplet applying device used in this manufacturing method, and FIG. 2 is a schematic configuration diagram of an ejection head unit of the droplet applying device in FIG. 1 and 2, 6 is an ejection head unit, 7 is a detection optical diameter, 9 is a droplet, 14 is an image identification device, 71 is an electron source substrate, 15 is an XY direction scanning mechanism, 16 is a position detection mechanism, and 17 is A position correction control mechanism 19 is a control computer.

  As the droplet applying device 6 of the discharge head unit, any mechanism may be used as long as it can quantitatively discharge arbitrary droplets, and an inkjet mechanism capable of forming droplets of about several tens of ng is particularly desirable. As the ink jet method, any of a piezo jet method using a piezoelectric element, a bubble jet method in which bubbles are generated using the heat energy of a heater, or the like may be used.

  As the material of the droplet 9, an aqueous solution, an organic solvent, or the like containing the element or compound that becomes the conductive thin film described above can be used. For example, when the element or compound used as the conductive thin film is palladium, examples thereof include palladium acetate-ethanolamine complex (PA-ME), palladium acetate-diethanol complex (PA-DE), palladium acetate-triethanolamine. An aqueous solution containing an ethanolamine complex such as a complex (PA-TE), palladium acetate-butylethanolamine complex (PA-BE), palladium acetate-dimethylethanolamine complex (PA-DME), or a palladium-glycine complex ( Pd-Gly), palladium-β-alanine complex (Pd-β-Ala), aqueous solution containing an amine acid complex such as palladium-DL-alanine complex (pd-DL-Ala), and further palladium acetate bis- Examples thereof include a butyl acetate solution of a di-propylamine complex.

  When such a droplet 9 is applied to a desired element electrode portion by the ink jet head 8, the amount of element electrode positional deviation to be applied is measured by the detection optical system 7 and the image identification device 14, and based on the measurement data. Then, correction coordinates are generated, and droplets are applied after the electron source substrate 14 and the inkjet head 8 are moved relative to each other according to the correction coordinates. As the detection optical system 7, a combination of a CCD camera or the like and a lens can be used, and as the image identification device 14, a commercially available one that binarizes an image and obtains its gravity center position can be used.

  The electron emission portion 5 is constituted by a high-resistance crack formed in a part of the conductive thin film 4, and depends on the film thickness, film quality, material, and a method such as energization forming described later. Become. The inside of the electron emission part 5 may contain conductive fine particles having a particle diameter of 1000 angstroms or less. The conductive fine particles contain part or all of the elements of the material constituting the conductive thin film 4. The electron emitting portion 5 and the conductive thin film 4 in the vicinity thereof may contain carbon or a carbon compound.

  As an example of the forming process applied to the conductive thin film 4, a method using an energization process will be described. When energization is performed between the device electrodes 2 and 3 using a power source (not shown), an electron emission portion 5 having a changed structure is formed at a portion of the conductive thin film 4. That is, according to the energization forming, a region having a structural change such as local destruction, deformation, or alteration is formed in the conductive thin film 4, and this site becomes the electron emission portion 5. An example of the voltage waveform of energization forming is shown in FIG.

  The voltage waveform is particularly preferably a pulse waveform. When a voltage pulse having a constant pulse peak value is applied continuously (FIG. 9A), or when a voltage pulse is applied while increasing the pulse peak value (FIG. 9). (B)). First, the case where the pulse peak value is a constant voltage (FIG. 9A) will be described.

  In FIG. 9A, T1 and T2 are the pulse width and pulse interval of the voltage waveform, T1 is 1 microsecond to 10 milliseconds, T2 is 10 microseconds to 100 milliseconds, and the peak value of the triangular wave (during energization forming) Is appropriately selected according to the form of the surface conduction electron-emitting device. Under such conditions, for example, a voltage is applied for several seconds to several tens of minutes. The pulse waveform is not limited to a triangular wave, and a desired waveform such as a rectangular wave may be used.

  T1 and T2 in FIG. 9B are the same as those shown in FIG. 9A, and the peak value of the triangular wave (peak voltage during energization forming) can be increased by, for example, about 0.1 V step. it can.

  The end of the energization forming process can be detected by applying a voltage that does not cause local destruction or deformation of the conductive thin film 4 during the pulse interval T2, and measuring the current. For example, the element current that flows when a voltage of about 0.1 V is applied is measured, the resistance value is obtained, and energization forming is terminated when a resistance of 1 M ohm or higher is indicated.

  It is desirable to perform a process called an activation process on the element that has completed energization forming. By applying the activation process, the device current If and the emission current Ie change remarkably.

The activation step can be performed, for example, by repeating the application of pulses in the same manner as the energization forming in an atmosphere containing an organic substance gas. This atmosphere can be formed by using the organic gas remaining in the atmosphere when the inside of the vacuum container is discarded using, for example, an oil diffusion pump or a rotary pump. It can also be obtained by introducing a gas of an appropriate organic substance in a vacuum. A preferable gas pressure of the organic material at this time is appropriately set according to the case because it varies depending on the application form, the shape of the vacuum container, the kind of the organic material, and the like. Suitable organic substances include alkanes, alkenes, alkyne aliphatic hydrocarbons, aromatic hydrocarbons, alcohols, aldehydes, ketones, amines, organic acids such as phenol, carboxylic acid, sulfonic acid, etc. Specifically, saturated hydrocarbons represented by C _n H _{2n + 2} such as methane, ethane, propane, etc., unsaturated hydrocarbons represented by composition formulas such as C _n H _2n such as ethylene and propylene, and benzene , Toluene, methanol, formaldehyde, acetaldehyde, acetone, methyl ethyl ketone, methylamine, ethylamine, phenol, formic acid, acetic acid, propionic acid and the like can be used. By this treatment, carbon or a carbon compound is deposited on the element from an organic substance present in the atmosphere, and the element current If and the method SHTU current Ie change remarkably. The end of the activation process is determined while measuring the device current If and the emission current Ie. The pulse width, pulse interval, pulse peak value, etc. are set as appropriate.

  Carbon or a carbon compound is graphite (refers to both single crystal and polycrystal) and amorphous carbon (amorphous carbon and carbon including a mixture of amorphous carbon and microcrystalline graphite). The film thickness is preferably 500 angstroms or less, more preferably 300 angstroms or less.

The electron-emitting device thus produced is preferably subjected to a stabilization process. This treatment may be performed at a partial pressure of the organic substance in the vacuum vessel of 1 × 10 ⁻⁸ Torr or less, preferably 1 × 10 ⁻¹⁰ Torr or less. The pressure in the vacuum vessel is preferably 10 ^−6.5 to 10 ⁻⁷ Torr, and particularly preferably 1 × 10 ⁻⁸ Torr or less. As the vacuum exhaust device for exhausting the vacuum vessel, it is preferable to use a device that does not use oil so that the oil generated from the device does not affect the characteristics of the element. Specifically, a vacuum exhaust apparatus such as a sorption pump or an ion pump can be used. Further, when the inside of the vacuum vessel is evacuated, it is preferable to overheat the whole vacuum vessel so that organic molecules adsorbed on the inner wall of the vacuum vessel or the electron-emitting device can be easily evacuated. The evacuation condition in the heated state at this time is preferably 80 to 200 ° C. for 5 hours or longer, but is not particularly limited to this condition, and various conditions such as the size and shape of the vacuum vessel and the configuration of the electron-emitting device. It depends on. In addition, the partial pressure measurement of the said organic substance is calculated | required by measuring the partial pressure of the organic molecule | numerator which has carbon and hydrogen whose mass number is 10-200 by a mass spectrometer, and integrating those partial pressures. After the stabilization process, the driving atmosphere is preferably maintained at the end of the stabilization process, but is not limited to this, and the degree of vacuum itself is sufficient if the organic substance is sufficiently removed. Sufficiently stable characteristics can be maintained even with a slight decrease. By adopting such a vacuum atmosphere, deposition of new carbon or a carbon compound can be suppressed, and as a result, the device current If and the emission current Ie are stabilized.

Next, the image forming apparatus of the present invention will be described.
Various arrangements of the electron-emitting devices of the electron source substrate used in the image forming apparatus can be adopted.

  First, each of a large number of electron-emitting devices arranged in parallel is connected at both ends, and a plurality of rows of electron-emitting devices are arranged (referred to as the row direction), and electrons are perpendicular to the wiring (referred to as the column direction). There is a ladder-type arrangement in which electrons from the electron-emitting device are controlled and driven by a control electrode (also called a grid) arranged in the information of the emitting device. Separately, a plurality of electron-emitting devices are arranged in a matrix in the X and Y directions, and one of the electrodes of the plurality of electron-emitting devices arranged in the same row is connected in common to the wiring in the X direction, Examples include one in which the other of the electrodes of the plurality of electron-emitting devices arranged in the same column is commonly connected to the Y-direction wiring. Such is a so-called simple matrix arrangement. First, the simple matrix arrangement will be described in detail below.

  An electron source substrate obtained by arranging a plurality of electron-emitting devices of the present invention in a matrix will be described with reference to FIG. In FIG. 10, 71 is an electron source substrate, 72 is an X-direction wiring, 73 is a Y-direction wiring, 74 is a surface conduction electron-emitting device, and 75 is a connection. The m X-direction wirings 72 are composed of DX1, DX2,... DXm, and the Y-direction wiring 73 is composed of n wirings DY1, DY2,. The material, film thickness, and wiring width are appropriately set so that a substantially uniform voltage is supplied to the large number of surface conduction type elements 74. These m X-direction wirings 72 and n Y-direction wirings 73 are electrically separated by an interlayer insulating layer (not shown) to form a matrix wiring (m and n are both positive integers).

  The interlayer insulating layer (not shown) is formed in a part of a desired region on the entire surface of the substrate 71 on which the X direction wiring 72 is formed. The X-direction wiring 72 and the Y-direction wiring 73 are drawn out as external terminals, respectively. Further, the device electrodes (not shown) of the surface conduction electron-emitting device 74 are electrically connected to the m X-direction wirings 72 and the n Y-direction wirings 73 by connection 75. The materials constituting the wiring 72 and the wiring 73, the material constituting the connection 75, and the material constituting the pair of element electrodes may be the same or partially different from each other. These materials are appropriately selected from, for example, the above-described element electrode materials. When the material constituting the element electrode and the wiring material are the same, the wiring connected to the element electrode can also be called an element electrode.

  The X-direction wiring 72 is electrically connected to scanning signal generating means (not shown) for applying a scanning signal for scanning a row of surface conduction electron-emitting devices 74 arranged in the X direction according to an input signal. Yes. On the other hand, the Y-direction wiring 73 is electrically connected to a modulation signal generating means (not shown) for applying a modulation signal for modulating each column of the surface conduction electron-emitting elements 74 arranged in the Y direction according to an input signal. It is connected. Furthermore, the drive voltage applied to each element of the surface conduction electron-emitting element 74 is supplied as a differential voltage between the scanning signal and the modulation signal applied to the element. As a result, individual elements can be selected and driven independently by simple matrix wiring.

  Next, an image forming apparatus using the simple matrix arrangement electron source created as described above will be described with reference to FIGS. FIG. 11 is a basic configuration diagram of a display panel of the image forming apparatus, and FIG. 12 shows a fluorescent film used for the display panel. FIG. 13 shows a block diagram of a driving circuit for performing display in accordance with an NTSC television signal and represents an image forming apparatus including the driving circuit.

  In FIG. 11, 71 is an electron source substrate on which an electron-emitting device 74 is formed on a substrate, 81 is a rear plate on which the electron source substrate 71 is fixed, 86 is a fluorescent film 84, a metal back 85, etc. formed on the inner surface of a glass substrate 83. The face plate 82 is a support frame, and the rear plate 81, the support frame 82, and the face plate 86 are coated with frit glass or the like and baked at 400 to 500 degrees for 10 minutes or more in the air or in nitrogen. The envelope 88 is formed by sealing. 74 corresponds to the electron-emitting device of FIG. Reference numerals 72 and 73 denote an X-direction wiring and a Y-direction wiring connected to a pair of device electrodes of the surface conduction electron-emitting device.

  Although the envelope 88 is constituted by the face plate 86, the support frame 82, and the rear plate 81 as described above, the rear plate 81 is provided mainly for the purpose of reinforcing the strength of the electron source substrate 71. If the substrate itself has sufficient strength, the separate rear plate 81 is not necessary, and the support frame 82 is directly sealed to the electron source substrate 71 and surrounded by the face plate 86, the support frame 82, and the electron source substrate 71. The device 88 may be configured. Furthermore, by providing an atmospheric pressure resistant support member called a spacer between the face plate 86 and the rear plate 81, the envelope 88 having sufficient strength against atmospheric pressure can be obtained.

  FIG. 12 is a schematic view showing a fluorescent film. In the case of monochrome, the phosphor is composed of only the phosphor, but in the case of a color phosphor film, the phosphor is composed of a black conductive material 91 called a black stripe or a black matrix depending on the arrangement of the phosphors. The purpose of providing the black stripe and the black matrix is to make the mixed colors and the like inconspicuous by making the coloration portions between the phosphors 92 of the three primary color phosphors necessary in the case of color display, It is to suppress a decrease in contrast due to light reflection. The material of the black stripe is not limited to the material that is not only a material mainly composed of graphite, which is usually used well, but also a material that is conductive and has little light transmission and reflection.

  As a method of applying the phosphor on the glass substrate 83, a precipitation method or a printing method is used regardless of monochrome or color. A metal back 85 is usually provided on the inner surface side of the fluorescent film 84 (FIG. 7). The metal back 85 improves the luminance by specularly reflecting the light emitted from the phosphor toward the inner surface to the face plate 86 side, acts as an electrode for applying an electron beam acceleration voltage, It has a role of protecting the phosphor from damage caused by collision of negative ions generated in the vessel. The metal back 85 can be manufactured by performing a smoothing process (usually called filming) on the inner surface of the fluorescent film 84 after forming the fluorescent film 84 and then depositing Al by vacuum evaporation or the like.

The face plate 86 may be provided with a transparent electrode (not shown) on the outer surface side of the fluorescent film 84 in order to further increase the conductivity of the fluorescent film 84.
When performing the above-described sealing, in the case of a color, each color phosphor must correspond to the electron-emitting device, and it is necessary to perform sufficient alignment.

The image forming apparatus shown in FIG. 11 is manufactured as follows, for example.
The envelope 88 is exhausted through an exhaust pipe (not shown) by an exhaust device that does not use oil, such as an ion pump or a sorption pump, with appropriate heating, as in the above-described stabilization step, and a vacuum degree of about 10 ⁻⁷ torr. After the atmosphere is sufficiently reduced, it is sealed. In some cases, a getter process is performed to maintain the degree of vacuum after the envelope 88 is sealed. This is because vapor deposition is performed by heating a getter disposed at a predetermined position (not shown) in the envelope 88 by a heating method such as resistance heating or high-frequency heating immediately before or after sealing the envelope 88. This is a process for forming a film. The getter usually contains Ba or the like as a main component, and maintains a vacuum degree of, for example, 1 × 10 ⁻⁵ torr to 1 × 10 ⁻⁷ torr by the adsorption action of the deposited film.

  Next, a schematic configuration of a driving circuit for driving the display panel configured using an electron source having a simple matrix arrangement type substrate and performing television display based on an NTSC television signal will be described with reference to FIG. To do. In FIG. 13, 101 is an image display panel, 102 is a scanning circuit, 103 is a control circuit, 104 is a shift register, 105 is a line memory, 106 is a synchronizing signal separation circuit, 107 is a modulation signal generator, Vx and Va are DC voltages. Is the source.

  The function of each part will be described below. First, the display panel 101 is connected to an external electric circuit via the terminals Dox1 to Doxm, the terminals Doy1 to Doyn, and the high voltage terminal Hv. Among these, the terminals Dox1 to Doxm sequentially drive the electron source provided in the display panel 101, that is, a group of surface conduction electron-emitting devices arranged in a matrix of M rows and N columns, row by row (N devices). A scanning signal for applying is applied. On the other hand, a modulation signal for controlling the output electron beam of each element of the surface conduction electron-emitting devices in one row selected by the scanning signal is applied to the terminals Doy1 to Doyn. The high voltage terminal Hv is supplied with a DC voltage of, for example, 10 K [V] from the DC voltage source Va. This is sufficient to excite the phosphor with the electron beam output from the surface conduction electron-emitting device. This is the acceleration voltage for applying energy.

  Next, the scanning circuit 102 will be described. The circuit includes M switching elements (schematically indicated by S1 to Sm in the figure), and each switching element is an output voltage of a DC voltage source Vx or 0 [V] (ground level). Any one of these is selected and electrically connected to the terminals Dox1 to Doxm of the display panel 101. Each of the switching elements S1 to Sm operates based on the control signal Tscan output from the control circuit 103, but in actuality, it can be configured by combining switching elements such as FETs. The DC voltage source Vx is such that the driving voltage applied to the element not scanned based on the characteristics (electron emission threshold voltage) of the surface conduction electron-emitting element is equal to or lower than the electron emission threshold voltage. It is set to output a constant voltage.

  The control circuit 103 has a function of matching the operation of each unit so that appropriate display is performed based on an image signal input from the outside. Based on a synchronization signal Tsync sent from a synchronization signal separation circuit 106 to be described next, control signals Tscan, Tsft, and Tmry are generated for each unit.

  The synchronization signal separation circuit 106 is a circuit for separating a synchronization signal component and a luminance signal component from an NTSC television signal input from the outside, and can be configured by using a frequency separation (filter) circuit. The synchronization signal separated by the synchronization signal separation circuit 106 is composed of a vertical synchronization signal and a horizontal synchronization signal as is well known, but is shown here as a Tsync signal for convenience of explanation. On the other hand, the luminance signal component of the image separated from the television signal is represented as a DATA signal for convenience, and this signal is input to the shift register 104.

  The shift register 104 is for serial / parallel conversion of the DATA signal input serially in time series for each line of the image, and operates based on the control signal Tsft sent from the control circuit 103. That is, the control signal Tsft may be rephrased as a shift clock of the shift register 104. Data for one line (corresponding to drive data for N electron-emitting devices) subjected to serial / parallel conversion is output from the shift register 104 as N parallel signals Id1 to Idn.

  The line memory 105 is a storage device for storing data for one image line for a necessary time, and appropriately stores the contents of Id1 to Idn according to the control signal Tmry sent from the control circuit 103. The stored contents are output as Id1 to Idn and input to the modulation signal generator 107.

  The modulation signal generator 107 is a signal source for appropriately driving and modulating each of the surface conduction electron-emitting devices according to each of the image data Id1 to Idn, and an output signal thereof is displayed on the display panel 101 through the terminals Doy1 to Doyn. It is applied to the surface conduction electron-emitting device.

  As described above, the electron-emitting device according to the present invention has the following basic characteristics with respect to the emission current Ie. That is, as described above, there is a clear threshold voltage Vth for electron emission, and electron emission occurs only when a voltage higher than Vth is applied. In addition, for a voltage higher than the electron emission threshold, the emission current also changes in accordance with the change in the voltage applied to the device. Note that the value of the electron emission threshold voltage Vth and the degree of change of the emission current with respect to the applied voltage may change by changing the material, configuration, and manufacturing method of the electron-emitting device. I can say that.

  That is, when a pulse voltage is applied to the device, for example, electron emission does not occur when a voltage lower than the electron emission threshold is applied, but when a voltage higher than the electron emission threshold is applied, an electron beam is applied. Is output. At that time, first, it is possible to control the intensity of the output electron beam by changing the peak value Vm of the pulse. Second, it is possible to control the total amount of charges of the electron beam output by changing the pulse width Pw.

  Therefore, as a method for modulating the electron-emitting device according to the input signal, there are a voltage modulation method, a pulse width modulation method, etc. In order to implement the voltage modulation method, the modulation signal generator 107 has a certain length. However, a voltage modulation circuit that appropriately modulates the peak value of the pulse according to the input data is used. In order to implement the pulse width modulation method, the modulation signal generator 107 generates a voltage pulse having a constant peak value, but a pulse width that appropriately modulates the width of the voltage pulse according to input data. A modulation circuit is used.

  The shift register 104 and the line memory 105 may be digital signal type or analog signal type. In short, the serial / parallel conversion and storage of the image signal may be performed at a predetermined speed.

  In the case of using a digital signal type, it is necessary to convert the output signal DATA of the synchronization signal separation circuit 106 into a digital signal. If the output part of the synchronization signal separation circuit 106 is provided with an A / D converter, Is possible. In this connection, the circuit used for the modulation signal generator 107 is slightly different depending on whether the output signal of the line memory 105 is a digital signal or an analog signal.

  First, the case of a digital signal will be described. In the voltage modulation method, for example, a well-known D / A conversion circuit may be used as the modulation signal generator 107, and an amplifier circuit or the like may be added as necessary. In the case of the pulse width modulation method, the modulation signal generator 107 compares, for example, a high-speed oscillator, a counter (counter) that counts the wave number output from the oscillator, and the output value of the counter with the output value of the line memory 105. It can be configured by using a circuit in which a comparator (comparator) is combined. If necessary, an amplifier may be added to amplify the voltage of the modulation signal output from the comparator to the driving voltage of the surface conduction electron-emitting device.

  Next, the case of an analog signal will be described. In the voltage modulation system, for example, an amplification circuit using a well-known operational amplifier or the like may be used as the modulation signal generator 107, and a level shift circuit or the like may be added as necessary. In the case of the pulse width modulation method, for example, a well-known voltage controlled oscillation circuit (VCO) may be used, and an amplifier for amplifying the voltage to the driving voltage of the surface conduction electron-emitting device is added if necessary. May be.

  In the image display apparatus having the above-described configuration, each electron-emitting device of the display panel 101 emits electrons by applying a voltage through the external terminals Dox1 to Doxm, Doy1 to Doyn, and also outputs the high-voltage terminal Hv. Then, a high voltage is applied to the metal back 85 or the transparent electrode (not shown), the electron beam is accelerated, collides with the fluorescent film 84, and is excited and emitted to display an image.

  The configuration described here is a schematic configuration necessary for producing a suitable image forming apparatus used for display or the like. For example, detailed portions such as materials of each member are not limited to the above-described contents, and the image It selects suitably so that it may be suitable for the use of a forming apparatus. Further, although the NTSC system has been exemplified as an input signal example, the present invention is not limited to this, and various systems such as the PAL and SECAM systems may be used, and more than this, a TV signal (for example, MUSE) composed of a large number of scanning lines. A high-definition TV system such as a system may be used.

Next, a ladder-type arrangement electron source substrate and an image display device will be described with reference to FIGS.
In FIG. 14, 110 is an electron source substrate, 111 is an electron-emitting device, and Dx 1 to Dx 10 of 112 are common wirings connected to the electron-emitting device 111. A plurality of electron-emitting devices 111 are arranged on the substrate 110 in parallel in the X direction. This is called an element row. A plurality of element rows are arranged on a substrate to constitute an electron source substrate. By applying a driving voltage between the common lines of each element row, each element row can be driven independently. That is, a voltage equal to or higher than the electron emission threshold may be applied to an element row where an electron beam is to be emitted, and a voltage equal to or lower than an electron emission threshold may be applied to an element row where no electron beam is emitted. Further, the common wirings Dx2 to Dx9 between the element rows, for example, Dx2 and Dx3, may be the same wiring.

  FIG. 15 shows a panel structure in an image forming apparatus having such a ladder-type arrangement of electron sources. 120 is a grid electrode, 121 is a hole for allowing electrons to pass through, 122 is a terminal outside the container made of Dox1, Dox2, ... Doxm, 123 is G1, G2, ... connected to the grid electrode 120 ... Container outer terminal 124 made of Gn is an electron source substrate in which the common wiring between the element rows is the same wiring. 11 and 13 indicate the same members. The difference from the image forming apparatus (FIG. 7) having the simple matrix arrangement described above is whether or not the grid electrode 110 is provided between the electron source substrate 110 and the face plate 86.

The grid electrode 120 is for modulating the electron beam emitted from the surface conduction electron-emitting device, and passes the electron beam through a striped electrode provided orthogonal to the element row of the ladder type arrangement. One circular opening 121 is provided corresponding to each element. The shape and installation position of the grid are not limited to those shown in FIG. For example, a large number of mesh openings can be provided as openings, and a grid can be provided around or in the vicinity of the surface conduction electron-emitting device.
The container outer terminal 122 and the grid container outer terminal 123 are electrically connected to a control circuit (not shown).

  In this image forming apparatus, a modulation signal for one image line is simultaneously applied to the grid electrode columns in synchronization with the sequential driving (scanning) of the element rows one by one. Thereby, irradiation of the phosphors with each electron beam can be controlled, and an image can be displayed line by line. According to this, in addition to a display device such as a television broadcast display device, a video conference system, and a computer, it can also be used as an image forming device as an optical printer configured using a photosensitive drum or the like.

  EXAMPLES Hereinafter, although an Example is given and this invention is demonstrated in detail, this invention is not limited to these Examples.

[Example 1]
FIG. 1 is a diagram that best represents the features of the present invention. FIG. 1 shows an ink jet droplet applying apparatus used for forming a fine particle film of a surface conduction electron-emitting device on an electron source substrate according to an embodiment of the present invention. It is a diagram showing the configuration of an apparatus provided with means for capturing image information and position information on a substrate surface and means for identifying. FIG. 2 is a schematic configuration diagram illustrating the ejection head unit of the apparatus of FIG. 1 in an enlarged manner.

The configuration of this apparatus will be described below.
First, in FIG. 1, reference numeral 15 denotes an XY direction scanning mechanism, on which an electron source substrate 71 is placed. The surface conduction electron-emitting device on the electron source substrate has the same structure as that shown in FIG. 7, and the single device is the same as shown in FIG. 7, the substrate 1, the device electrodes 2 and 3, the conductive thin film (fine particle film). ) 4. Disposed above the electron source substrate 71 is an ejection head unit 6 that applies droplets. In the present embodiment, the ejection head unit 6 is fixed, and the electron source substrate 71 is moved to an arbitrary position by the XY direction scanning mechanism 15, so that the ejection head unit 6 and the electron source substrate 71 are relatively moved.

  Next, the configuration of the ejection head unit 6 will be described with reference to FIG. Reference numeral 7 denotes a detection optical system that captures image information on the electron source substrate 71. The detection optical system 7 is close to the inkjet head 8 that discharges the droplet 9, and the optical axis 11 and the focal position of the detection optical system 7 and the inkjet head 8. The droplets 9 are arranged so as to coincide with the landing positions 10 of the droplets 9. In this case, the positional relationship between the detection optical system 7 and the inkjet head 8 can be precisely adjusted by the head alignment fine movement mechanism 12 and the head alignment control mechanism 13. The detection optical system 7 uses a CCD camera and a lens.

  Returning again to FIG. Reference numeral 14 denotes an image identification device that identifies image information captured by the previous detection optical system 7 and has a function of binarizing the contrast of the image and calculating the position of the center of gravity of the binarized specific contrast portion. is there. Specifically, VX-4210, a high-precision image recognition device manufactured by Keyence Corporation can be used. A means for giving position information on the electron source substrate 71 to the image information thus obtained is the position detection mechanism 16. For this purpose, a length measuring device such as a linear encoder provided in the XY direction scanning mechanism 15 can be used. The position correction control mechanism 17 corrects the position based on the image information and the position information on the electron source substrate 71. This mechanism corrects the movement of the XY direction scanning mechanism 15. . Further, the inkjet head 8 is driven by the inkjet head control / drive mechanism 18, and droplets are applied on the electron source substrate 71. Each control mechanism described so far is centrally controlled by the control computer 19.

  Next, FIGS. 3 and 4 will be described. FIG. 3 is a schematic diagram showing how droplets are applied to the electrode gap portion, and FIG. 4 is a schematic diagram showing a droplet applying method in this apparatus. In FIG. 3, 22 is an element electrode formed at a position as designed, 23 is an element electrode group in which the pitch between a pair of element electrodes is shortened, 24 is an element electrode group displaced to the left, and 25 is to the right. The group of element electrodes 26, which are gradually displaced, are droplets that are displaced. In FIG. 4, 27 is the center of gravity position of the element electrode read by the image measurement, 28 is the corrected droplet application position, and 29 is the droplet applied after position correction on the element electrode.

A method for manufacturing an electron source substrate will be sequentially described with reference to FIGS.
First, a blue glass substrate was prepared as an insulating substrate, which was sufficiently washed with an organic solvent or the like and then dried in a 120 ° C. drying oven. A plurality of a pair of element electrodes having an electrode width of 500 μm and an electrode gap interval of 20 μm were formed on this substrate using a Pt film (film thickness of 2000 mm), and an electron source substrate 71 was prepared in which wirings were connected to the electrodes. As the wiring, a matrix arrangement was adopted. In the electron source substrate 71 of FIG. 1, the wiring is not shown, and only the element electrode group is shown. In addition, an organic solvent-based palladium acetate / bis / di / propylamine complex butyl acetate solution was prepared as a droplet raw material solution. As the ink discharge head, a piezo jet type was prepared.

  Next, the electron source substrate 71 is set on the XY direction scanning mechanism 15 of FIG. 1, and droplets are applied. At this time, as shown in FIG. 3 (a-2), if the element electrode position is almost the same as the design value and there is a deviation of about several μm, the coating is performed according to the coordinates of the design value as shown in FIG. Can be applied. In order to manufacture the device electrode over a large area, a printing method may be used depending on the size because of cost merit. The Pt film (thickness: 2000 mm) of this example was produced by screen printing, and the position of the device electrode was shifted from the design value by several tens of μm due to deformation of the screen plate, and the glass substrate was subjected to a heat treatment process after printing. The whole is shrunk and the pitch is shortened by several μm, and the position of the entire device electrode may be shifted from the design value by several tens of μm at the maximum. FIG. 3B-1 shows such a situation. Here, as an example of the deviation from the design value, the element electrode group 23 in which the pitch between the pair of element electrodes is shortened, the element electrode group 24 displaced to the left, and the three rows of elements gradually displaced to the right Although the electrode group 23 is shown, in such a situation, as shown in FIG. 3B-2, when the upper left droplet is applied as the origin, the droplet is dropped from above the gap. As shown in FIG. 26, the coating is applied with a large deviation, and this does not function sufficiently as an element.

  Although the printing method is not always inaccurate, irregular deviations are sufficiently considered for each printing lot. In this case, for example, such irregular deviation cannot be dealt with at all by simply correcting the pitch of the design value evenly.

  Therefore, the above problems can be solved by using the image measurement and correction function of this apparatus. This will be described with reference to FIG. First, FIG. 4 (a) shows a group of device electrodes that are shifted in the same manner as FIG. 3 (b-1), and this electrode arrangement is formed on the electron source substrate 71 of FIG. Assume that At this time, the coordinates of the electron source substrate 71 on the apparatus are determined by an alignment marker or the like on the electron source substrate 71. Next, a pair of element electrode positions are read by the detection optical system 7 incorporated in the ejection head unit 6, and the image identification device 14 calculates a centroid position based on the binarized contrast. Thus, it is recognized as position information on coordinates in the electron source substrate 71. Such a series of data processing is all performed by the control computer 19 of FIG. Crosses 27 on each electrode in FIG. 4A indicate the position of the center of gravity. Based on this, the corrected coordinates are determined, and the droplet application position 28 as shown in FIG. 4B. Is corrected, and the corrected droplet 29 is applied to the displaced element electrode as shown in FIG. The position correction operation at this time is performed by correcting the movement position of the substrate itself by the position correction control mechanism 17 and the XY direction scanning mechanism 15.

  After applying droplets to the gap portions of each element electrode in this device by applying them four times in succession, the element electrode substrate is heated in a baking furnace at 350 ° C. for 20 minutes to remove organic components, thereby forming the element electrode portion. A conductive thin film made of palladium oxide (PdO) fine particles was formed. The circular diameter after firing was about 100 μm and the film thickness was 150 mm. The element length is about 100 μm.

  Furthermore, a voltage was applied between the device electrodes 2 and 3 on which the conductive thin film was formed, and the conductive thin film was subjected to energization treatment (forming treatment) to form an electron emission portion. Thus, an electron source substrate having a surface conduction electron-emitting device group was completed. FIG. 5 shows a schematic diagram of the electron source substrate according to the completed matrix arrangement. Reference numeral 30 in FIG. 5 denotes a conductive thin film formed by firing droplets.

  On the electron source substrate, as shown in FIG. 11, an envelope 88 is formed by a face plate 86, a support frame 82, and a rear plate 81, vacuum-sealed, and a display panel using matrix wiring is formed. . Then, an image forming apparatus having a drive circuit for performing television display based on an NTSC television signal as shown in FIG. 13 was produced.

  An image equivalent to that obtained by the conventional vacuum film formation, photolithography, and etching process was obtained by the image forming apparatus using the surface conduction electron-emitting device manufactured by the method described in Example 1 above.

[Example 2]
A method for manufacturing an image forming apparatus having a surface conduction electron-emitting device according to a second embodiment of the present invention will be described. In this embodiment, as shown in FIG. 14, a plurality of electrodes are arranged in a matrix and the electrodes are connected in a ladder shape by wiring. The method for manufacturing the surface conduction electron-emitting device is exactly the same as in Example 1.

First, a glass substrate was used as an insulating substrate, which was sufficiently washed with an organic solvent or the like and then dried in a drying furnace at 120 ° C. An element electrode having an electrode width of 500 μm and an electrode gap interval of 20 μm was formed on this substrate using a Pt film (thickness 1000 μm). A ladder-like wiring was connected to this electrode. (Not shown)
In addition, an organic solvent-based palladium acetate / bis / di / propylamine complex butyl acetate solution was prepared as a droplet raw material solution. An inkjet head using a piezo jet method was prepared.

  Also in the example, the apparatus shown in FIG. 1 of Example 1 was used, and droplets were applied by correcting the similarly displaced elements without any problem. Next, after applying droplets four times in succession to the gap portions of each element electrode, the element electrode substrate is heated in a firing furnace at 350 ° C. for 20 minutes to remove the organic components, whereby the element electrode portion A conductive thin film composed of palladium oxide (PdO) fine particles was formed. The fired conductive thin film had a circular diameter of about 100 μm, a film thickness of 150 mm, and an element length of about 100 μm. Further, a voltage is applied between the device electrodes 2 and 3 on which the conductive thin film is formed, and the conductive thin film is energized (forming process) to form an electron emission portion, thereby forming a surface conduction electron-emitting device group. The electron source substrate was completed. FIG. 6 shows a schematic diagram of the electron source substrate according to the completed ladder type arrangement. Reference numeral 30 in FIG. 6 denotes a conductive thin film formed by firing droplets.

  With respect to this electron source substrate, as shown in FIG. 15, an envelope is formed by a face plate 86, a support frame 82, and a rear plate 81, and vacuum sealing is performed to form a display panel using ladder wiring. . Using this, an image forming apparatus having a drive circuit for performing television display based on an NTSC television signal as shown in FIG. 13 was produced.

  The image forming apparatus using the surface conduction electron-emitting device manufactured by the method shown in the above Example 2 was able to obtain an image equivalent to that obtained by the conventional vacuum film formation, photolithography, and etching process.

[Example 3]
In this Example 3, an electron source substrate with matrix arrangement type wiring is used, and the raw material solution of the droplet is an aqueous solution type, and an aqueous solution of palladium acetate-ethanol-amine complex is used. A bubble jet system was used.

  Using the apparatus shown in FIG. 1 of Example 1, droplets were applied by correcting the similarly displaced elements without any problem. After the droplets are applied to the gap portions of the device electrodes in an order of 4 times, the device electrode substrate is heated in a firing furnace at 350 ° C. for 20 minutes to remove moisture and organic components. A conductive thin film made of palladium oxide (PdO) fine particles was formed. The fired conductive thin film had a circular diameter of about 100 μm, a film thickness of 150 mm, and an element length of about 100 μm. Furthermore, a voltage was applied between the device electrodes 2 and 3 on which the conductive thin film was formed, and the conductive thin film was subjected to energization treatment (forming treatment) to form an electron emission portion. Thus, an electron source substrate having a surface conduction electron-emitting device group was completed. The schematic diagram of the electron source substrate with the completed matrix arrangement is the same as FIG. 5 of the first embodiment. Reference numeral 30 in FIG. 5 denotes a conductive thin film formed by firing droplets.

  An envelope is formed on the electron source substrate by the face plate 86, the support frame 82, and the rear plate 81, and vacuum sealed to form a display panel with matrix type wiring as shown in FIG. 11, as shown in FIG. An image forming apparatus having a driving circuit for performing television display based on an NTSC television signal was manufactured.

  The image forming apparatus using the surface conduction electron-emitting device manufactured by the method shown in the above Example 1 obtained an image equivalent to that obtained by the conventional vacuum film formation, photolithography, and etching process.

[Example 4]
In this embodiment, an electron source substrate with ladder-arranged wiring is used, and the raw material solution of the droplet is an aqueous solution type, and an aqueous solution of palladium acetate-ethanol-amine complex is used. A jet was used.

  Using the apparatus shown in FIG. 1 of Example 1, droplets could be applied by correcting the similarly displaced elements without any problem. After applying the droplets to the gap portions of each device electrode four times in succession, the device electrode substrate is heated in a baking furnace at 350 ° C. for 20 minutes to remove moisture, organic components, etc. A conductive thin film made of palladium oxide (PdO) fine particles was formed. The circular diameter after firing was about 100 μm, the film thickness was 150 mm, and the element length was about 100 μm. Further, a voltage is applied between the device electrodes 2 and 3 on which the conductive thin film is formed, and the conductive thin film is energized (forming process) to form an electron emission portion, thereby forming a surface conduction electron-emitting device group. The electron source substrate was completed. The schematic diagram of the electron source substrate according to the completed ladder arrangement is the same as FIG. 6 of the second embodiment. Reference numeral 30 in FIG. 6 denotes a conductive thin film formed by firing droplets.

  An envelope is formed on the electron source substrate by the face plate 86, the support frame 82, and the rear plate 81, and vacuum-sealed to form a display panel with ladder-type wiring as shown in FIG. 15, as shown in FIG. An image forming apparatus having a driving circuit for performing television display based on an NTSC television signal was manufactured.

  The image forming apparatus using the surface conduction electron-emitting device manufactured by the method shown in the above Example 2 was able to obtain an image equivalent to that obtained by the conventional vacuum film formation, photolithography, and etching process.

According to the above-described embodiments and examples, in the formation of the surface conduction electron-emitting device on the electron source substrate, the conductive fine particle film serving as the electron-emitting portion is detected by detecting the rough counter position between the device and the ejection head. Since droplets are applied using an ink jet device having a means for correcting, when a droplet is applied to an element electrode that has shifted over a large area, the shift can be automatically and reliably handled. In addition, the conductive thin film can be formed stably and accurately, and the yield of manufacturing the electron source substrate can be improved. In addition, when forming a large number of elements on a large-area electron source substrate, patterning can be performed at the same time as the film formation without using a photolithography etching method for the production of the conductive thin film. The manufacturing process can be simplified and the manufacturing cost of the electron source substrate can be reduced.
Further, the image forming apparatus using the above-described electron source substrate can be similarly realized at a low price and with little variation.

It is a schematic block diagram which shows the droplet application apparatus used by this invention. It is a schematic block diagram of the discharge head unit of the droplet application apparatus of FIG. It is a schematic diagram which shows the droplet application condition to an element electrode. It is a schematic diagram which shows the droplet application method to the element electrode by the droplet application apparatus which concerns on one Embodiment of this invention. FIG. 3 is a schematic plan view of a matrix-arranged electron source substrate manufactured by a droplet applying device according to an embodiment of the present invention. It is a typical top view of the ladder arrangement type electron source board concerning one embodiment of the present invention. 1A and 1B are a schematic plan view and a cross-sectional view showing a configuration of a planar surface conduction electron-emitting device according to an embodiment of the present invention. It is a schematic diagram which shows the manufacturing method of the surface conduction electron-emitting device which concerns on one Embodiment of this invention. It is a schematic diagram which shows the voltage waveform example in the energization forming process which can be employ | adopted at the time of manufacture of the surface conduction electron-emitting device which concerns on one Embodiment of this invention. It is a schematic diagram showing an example of a matrix arrangement type electron source substrate according to an embodiment of the present invention. 1 is a schematic diagram illustrating an example of a display panel of an image forming apparatus using a matrix-arranged electron source substrate according to an embodiment of the present invention. It is a schematic diagram which shows the fluorescent film which concerns on one Embodiment of this invention. FIG. 13 is a block diagram of a drive circuit for displaying on the display panel of FIG. 12 in accordance with an NTSC television signal on the image forming apparatus. It is a figure showing a ladder arrangement type electron source board concerning one embodiment of the present invention. It is a schematic diagram which shows the display panel of the image forming apparatus by the ladder arrangement type electron source substrate concerning one embodiment of the present invention. It is a block diagram of the conventional surface conduction electron-emitting device.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1: Substrate, 2, 3: Element electrode, 4: Conductive thin film, 5: Electron emission part, 6: Discharge head unit, 7: Detection optical system, 8: Inkjet head, 9: Droplet, 10: Droplet Landing position, 11: optical axis, 12: head alignment fine movement mechanism, 13: head alignment control mechanism, 14: image identification device, 15: XY direction scanning mechanism, 16: position detection mechanism, 17: position correction control mechanism, 18: Ink-jet head drive / control mechanism, 19: control computer, 22: device electrode formed at a position as designed, 23: device electrode group with a pitch shift, 24: device electrode group with a shift to the left, 25 : Device electrode group gradually shifted to the right, 26: liquid droplet displaced, 27: device electrode correction position read by image measurement, 28: corrected liquid droplet application position, 29: device electrode 30: Conductive thin film formed by firing droplets, 71: Electron source substrate, 72: X direction wiring, 73: Y direction wiring, 74: Surface conduction electron-emitting device, 75: Connection, 81: Rear plate, 82: Support frame, 83: Glass substrate, 84: Fluorescent film, 85: Metal back, 86: Face plate, 87: High voltage terminal, 88: Envelope, 91: Black member, 92: phosphor, 101: display panel, 102: scanning circuit, 103: control circuit, 104: shift register, 105: line memory, 106: synchronization signal separation circuit, 107: modulation signal generator, Vx, Va: DC voltage 110: electron source substrate, 111: electron-emitting device, 112: Dx1 to Dx10 are common wires for wiring the electron-emitting device, 120: grid electrode, 121: hole, 122: Do 1, Dox2 ······ vessel terminals consisting Doxm, 123: G1 is connected the grid electrode 120, G2, grid vessel terminals consisting · · · · · · Gn.

Claims (9)

An ejection head unit having an inkjet head and a detection optical system for capturing image information on the substrate surface, an image identification device for identifying image information captured by the detection optical system, and a position on the substrate for the obtained image information Using an inkjet apparatus including a position detection mechanism that provides information, and a position correction control mechanism that performs position correction based on image information and position information,
Electrons that form a conductive thin film by applying droplets of a solution containing a conductive thin film material between a plurality of pairs of element electrodes on a substrate, and form a surface conduction electron-emitting device group on the substrate A method for manufacturing a source substrate, comprising:
An electrode arrangement step of arranging a plurality of the device electrodes on a substrate;
A solution of the material of the conductive thin film, by using the ink jet apparatus, a solution step of applying to each of the plurality of element electrodes arranged on the substrate,
And heat-treating the substrate to which the solution has been applied by the solution application step,
The solution application step includes
A position detection step of detecting position information of each of the plurality of element electrodes;
The way the solution inkjet device is ejected from an inkjet head comprising is applied to each of the plurality of element electrodes, on the basis of the detection result of the position detecting step, wherein the each of the plurality of element electrodes A position correction step for correcting the relative position to the inkjet head;
The manufacturing method of the electron source board | substrate characterized by comprising. The position detecting step includes a step of calculating a deviation amount from a design value of each position of the plurality of element electrodes arranged on the substrate,
In the position correction step, each of the plurality of element electrodes and the inkjet ink are applied so that the solution discharged from the inkjet head is applied to each of the plurality of element electrodes based on the deviation amount. The method of manufacturing an electron source substrate according to claim 1, further comprising a step of correcting a relative position with respect to the head. The method of manufacturing an electron source substrate according to claim 1, wherein the design value is a value set as a coordinate position defined by an alignment marker provided on the substrate. Wherein the position detection step, according to claim 1, wherein based on each of the image information of a plurality of element electrodes comprising the step of detecting a relative position between each said ink-jet head of the plurality of element electrodes, it is characterized by The manufacturing method of the electron source substrate of any one of thru | or 3. Said position detecting step, the center of gravity of each of the plurality of element electrodes, any one of claims 1 to 4, characterized in that it comprises the step of calculating on the basis of the image information of each of the plurality of element electrodes 1 The manufacturing method of the electron source board | substrate as described in a term. 6. The electron source substrate according to claim 1, wherein the electrode arranging step further includes a step of forming a plurality of wirings to which each of the plurality of element electrodes is connected. Production method. The said electrode arrangement | positioning process includes the process of drying after wash | cleaning the said board | substrate previously, before arrange | positioning these element electrodes on the said board | substrate, The any one of Claim 1 thru | or 6 characterized by the above-mentioned. The manufacturing method of the electron source board | substrate of description. The method of manufacturing an electron source substrate according to claim 1, wherein the inkjet head is of a bubble jet type or a piezo type. 9. The electron source substrate according to claim 1, wherein the position correcting step includes a step of moving the position of the substrate without moving the position of the inkjet head. Production method.

Images