JP2002025428A - Manufacturing method of electron source substrate, electron source manufactured by the method and image display device using the substrate - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a manufacturing method of an electron source substrate which forms surface-conducting electron emission element with few number of processes, stably with high yield rate and at a low cost by an ink jet droplet addition method. SOLUTION: An electron emission element group is formed by adding four drop of droplets between element electrodes, and then a small space is provided at a region Xa, region Xb, region Ya and region Yb, other than a region X and region Y that is a region which forms an electron emission element group, or outside of the region forming an electron element group, where similar plurality of pairs of element electrodes are formed, between which droplets of solution containing materials of conductive thin film are added in spray, whereby a pattern of element electrodes and a conductive film similar to the electron emission elements are formed (here, installed at four corners). Functions or the like of elements at formation of the electron emission part by forming treatment are checked by the pattern of the element electrodes and the conductive thin film formed outside the region forming the electron emission element group.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing an electron source substrate using a surface conduction electron-emitting device, an electron source substrate manufactured by the method, and an image display device using the substrate.

[0002]

2. Description of the Related Art Conventionally, two types of electron emitting devices, a thermionic electron source and a cold cathode electron source, are known. The cold cathode electron source includes a field emission type (hereinafter, referred to as an FE type), a metal / insulating layer / metal type (hereinafter, referred to as an MIM type), a surface conduction type electron emission element, and the like. An example of the FE type is “WP Dyke”.
& W. W. Dolan, "Field emissi
on ", Advance in Electron P
physics, 889 (1956) "or" C.
A. Spindt, "Physical Proper
ties of thin-film fielddem
issue cathodes with molly
bdenium "J. Appl. Phys., 4752.
48 (1976) ". Examples of the MIM type include “CA Mead,“ The Tunnel-
emission amplifier ", J. App.
l. Phys. , 32 646 (1961) "and the like.

Examples of the surface conduction electron-emitting device type include:
"MI Elinson, Radio Eng. El
electron Phys. , 1290 (1965) ". The surface conduction electron-emitting device utilizes a phenomenon in which electron emission occurs when a current flows through a small-area thin film formed on a substrate in parallel with the film surface. As this surface conduction type electron-emitting device, the aforementioned Elinson
And the like using an SnO ₂ thin film and the one using an Au thin film (“G. Dittmer:“ Thin SolidF ”).
ilms ", 9 317 (1972)"), In ₂ O ₃ /
According to SnO ₂ thin film (“M. Hartwell a
nd C.I. G. FIG. Fonstad: “IEEE Tran
s. ED Conf. ", 519 (1975)"), using a carbon thin film ("Hisashi Araki et al .: Vacuum, Vol. 26,
No. 1, p. 22 (1983) ") and the like.

[0004] A typical device configuration of these surface conduction electron-emitting devices is described in the aforementioned M.A. FIG. 20 shows the Hartwell device configuration. In FIG. 20, 1 is a substrate, 2,
3 is an element electrode, 4 is a conductive thin film, and the conductive thin film 4 is H
The electron-emitting portion 5 is formed of a metal oxide thin film or the like formed by sputtering in a pattern of a mold shape, and is subjected to an energization process called energization forming described later. The distance L1 between the device electrodes 2 and 3 in the figure is 0.5 to 1 mm, W1
Is set to 0.1 mm.

Conventionally, in these surface-conduction electron-emitting devices, the electron-emitting portion 5 is generally formed by subjecting the conductive thin film 4 to an energization process called energization forming before performing electron emission. It is a target. The energization forming is to apply a direct current voltage or a very slow rising voltage (for example, about 1 V / min) to both ends of the conductive thin film 4 and to apply electricity to locally destroy, deform or alter the conductive thin film 4, and To form the electron-emitting portion 5 in a high resistance state. In the electron emitting section 5, a crack is generated in a part of the conductive thin film 4, and electrons are emitted from the vicinity of the crack. In the surface conduction type electron-emitting device subjected to the energization forming process, a voltage is applied to the conductive thin film 4 and a current is caused to flow through the device to cause the electron-emitting portion 5 to emit electrons.

[0006] The surface conduction electron-emitting device as described above has an advantage that a large number of devices can be arranged and formed over a large area because the structure is simple and the production is easy. Therefore, applied researches on charged beam sources, display devices and the like utilizing this feature are being made. As an example in which a large number of surface conduction electron-emitting devices are arranged and formed, as will be described later, surface conduction electron-emitting devices are arranged in parallel called a trapezoidal arrangement, and both ends of each element are wired (also referred to as common wiring). ), An electron source in which a plurality of connected lines are arranged (for example, JP-A-64-31332, JP-A-1-283737, JP-A-2-257552, etc.).

In recent years, in particular, in image forming apparatuses such as display apparatuses, flat panel display apparatuses using liquid crystals have been replaced with CRTs.
However, there has been a problem that the backlight must be provided because it is not a self-luminous type, and the development of a self-luminous type display device has been desired. An example of the self-luminous display device is an image forming device which is a display device in which an electron source having a large number of surface conduction emission elements arranged thereon and a phosphor that emits visible light by electrons emitted from the electron source are combined. (See, for example, US Pat. No. 5,066,883.
issue).

However, the method of manufacturing a surface conduction electron-emitting device according to the above-mentioned conventional example uses a lot of vacuum film formation and photolithography / etching in a semiconductor process.
There are disadvantages in that the number of steps is large and the production cost of the electron source substrate is high.

In order to solve the above problems, the present inventor has proposed:
In forming the conductive thin film of the element portion of the surface conduction electron-emitting device as described above, US Pat.
No. 3298030, No. 3596275, No. 34
No. 16153, No. 3747120, No. 5729257
The above-described conductive thin film can be stably formed at a good yield and at low cost without using a vacuum film forming method and a photolithography / etching method by means of an ink jet droplet applying means known as No. I thought it might be.

However, unlike ink jet printers that fly and record ink toward paper, the functions required as a manufacturing apparatus for manufacturing such an electron source substrate at a factory, and the electronic devices manufactured by the manufacturing apparatus, are required. The source substrate also has the character as a component unit to be shipped from the factory, and some ideas are still needed to apply this inkjet technology.

[0011]

SUMMARY OF THE INVENTION The object of the present invention is to provide a method of manufacturing an electron source substrate of an image display device using the above-mentioned surface conduction electron-emitting device, and to provide the electron source substrate and the use thereof. SUMMARY OF THE INVENTION It is an object of the invention according to claims 1 and 4 to allow an electron source substrate having a surface conduction electron-emitting device to be distinguished from each other after the manufacture. Claims 2 and 5
An object of the present invention is to enable performance check of an electron source substrate having a surface conduction electron-emitting device group. It is an object of the present invention to provide a method for manufacturing an electron source substrate having a surface conduction electron-emitting device by a novel method. It is an object of the present invention to provide an image display device using the above-mentioned electron source substrate. It is an object of the present invention to provide an image display device using the above-mentioned electron source substrate, wherein the manufactured image display devices can be distinguished from each other.

[0012]

According to a first aspect of the present invention, a plurality of pairs of device electrodes are arranged on a substrate, and a droplet of a solution containing a material of a conductive thin film is sprayed between each pair of device electrodes. Forming a surface conduction electron-emitting device group by the conductive thin film, wherein a droplet of a solution is ejected outside a region where the surface conduction electron-emitting device group is formed. By providing, the electron source substrate manufactured by the method for manufacturing an electron source substrate is formed with a pattern that can be distinguished for each substrate or for each of a plurality of substrate groups.

According to a second aspect of the present invention, a plurality of pairs of device electrodes are arranged on a substrate, and a droplet of a solution containing a material of the conductive thin film is sprayed between each pair of the device electrodes to apply the conductive thin film. A method of manufacturing an electron source substrate for forming a surface conduction electron-emitting device group according to claim 1, wherein one or more pairs of device electrodes are arranged outside a region where the surface conduction electron-emitting device group is formed. At the same time, by spraying a droplet of a solution containing the material of the conductive thin film between each pair of device electrodes, another surface conduction type electron for performance check of the surface conduction type electron-emitting device group is provided. An emission device or an electron emission device group is formed.

According to a third aspect of the present invention, there is provided a surface conduction electron-emitting device group having a plurality of pairs of device electrodes arranged on a substrate and a conductive thin film formed by spraying between each pair of device electrodes. The formed electron source substrate is characterized in that the area to which the jet is applied is wider than the area where the surface conduction electron-emitting device group is formed.

According to a fourth aspect of the present invention, there is provided a surface conduction electron-emitting device group having a plurality of pairs of device electrodes disposed on a substrate and a conductive thin film formed by spraying between each pair of device electrodes. In the formed electron source substrate, the electron source substrate is disposed for each substrate or for each of a plurality of substrate groups by a droplet of a sprayed solution outside a region where the surface conduction electron-emitting device group is formed. And a pattern which can be distinguished is formed.

According to a fifth aspect of the present invention, there is provided a surface conduction electron-emitting device group having a plurality of pairs of device electrodes disposed on a substrate and a conductive thin film formed by spraying between each pair of device electrodes. In the formed electron source substrate, one or more pairs of device electrodes are arranged outside a region where the surface conduction electron-emitting device group is formed, and the conductive material is provided between each pair of device electrodes. Another surface conduction type electron-emitting device or a group of electron-emitting devices formed of a thin film is formed to check the performance of the surface conduction type electron-emitting device group.

According to a sixth aspect of the present invention, there is provided the method of any one of the third to fifth aspects, further comprising:
And a face plate on which a phosphor is mounted.

According to a seventh aspect of the present invention, there is provided a surface conduction device having a plurality of pairs of device electrodes disposed on a substrate and a conductive thin film formed by spraying a conductive solution between each pair of device electrodes. The electron source substrate on which the electron-emitting device group is formed, and outside the region where the surface-conduction electron-emitting device group is formed, a second plurality of pairs of electrodes different from the plurality of pairs of device electrodes are provided. An electron source substrate on which device electrodes are arranged and a second surface conduction type electron-emitting device group formed of a conductive thin film is formed by spraying a droplet of a conductive solution between the second plurality of pairs of device electrodes; And a face plate provided with a phosphor, which is disposed opposite to the electron source substrate, wherein the second surface conduction electron-emitting device group is provided with a different signal for each electron source substrate. Input the information and drive to display on the image display device. By performing, in which characterized in that a distinguishable the image display device for each image display device.

[0019]

FIG. 1 is a schematic view showing an example of an electron source substrate constituting a flat surface conduction electron-emitting device according to an embodiment of the present invention. FIG. 1A is a plan view thereof. , FIG.
FIG. 1B is a cross-sectional view taken along the line BB of FIG. 1A. In FIG. 1, reference numeral 1 denotes a substrate, reference numerals 2 and 3 denote device electrodes, reference numeral 4 denotes a conductive thin film, and reference numeral 5 denotes an electron-emitting portion. The basic configuration of the surface conduction electron-emitting device of the present invention is a plane type, and here, for simplicity, the configuration of one flat surface conduction electron-emitting device is schematically shown. As described later, such a planar surface conduction electron-emitting device is configured as a device group in which the devices are arranged in a matrix.

The substrate 1 is made of quartz glass, glass with a reduced content of impurities such as Na, blue plate glass, SiO ₂
And a ceramic substrate made of alumina or the like, on the surface of which is deposited. Device electrodes 2 and 3
As a material for the material, a general conductive material can be used. For example, Ni, Cr, Au, Mo, W, Pt, T
metal or alloy such as i, Al, Cu, Pd, Pd, A
a printed conductor composed of a metal such as s, Ag, Au, RuO ₂ , Pd-Ag or a metal oxide and glass;
It is appropriately selected from a transparent conductor such as ₂ O ₃ —SnO _{2 and} a semiconductor material such as polysilicon.

The distance L between the device electrodes 2 and 3 is preferably in the range of several thousand μm to several hundred μm, and more preferably 1 μm to 200 μm in consideration of the voltage applied between the device electrodes 2 and 3. Range. Length W of device electrodes 2 and 3
Is several μm in consideration of the electrode resistance and electron emission characteristics.
m to several hundred μm, and the thickness d of the device electrodes 2 and 3 is in the range of 100 ° to 1 μm. Note that the present invention is not limited to the configuration shown in FIG.

FIG. 2 is a view for explaining a method of manufacturing the flat surface conduction electron-emitting device shown in FIG.
FIG. 2A is a view in which device electrodes 2 and 3 are formed on a substrate 1 and FIG.
(B) is a diagram in which a conductive thin film 4 is formed on the device electrodes 2 and 3,
FIG. 2 (C) shows a view in which an electron emitting portion 5 is formed on the conductive thin film 4. The conductive thin film 4 is particularly preferably a fine particle film composed of fine particles in order to obtain good electron emission characteristics. It is appropriately set depending on the value and the energization forming conditions to be described later, but is preferably several to several thousand degrees, particularly preferably 10 to 500 degrees. The resistance value of Rs is 10 2
It is a value of the power to 10 7 Ω. Rs represents the resistance R of a thin film having a thickness t, a width w, and a length of 1, and R = Rs (1
/ W), where Rs = ρ / t where ρ is the resistivity of the thin film material. Here, the energization process will be described as an example of the forming process, but the forming process is not limited to this.
Any method may be used as long as it forms a high resistance state by causing cracks in the film.

The material constituting the conductive thin film 4 is P
d, Pt, Ru, Ag, Au, Ti, In, Cu, C
metals such as r, Fe, Zn, Sn, Ta, W, Pb, Pd
Oxides such as O, SnO ₂ , In ₂ O ₃ , PbO, Sb ₂ O ₃ , HfB ₂ , ZrB ₂ , LaB ₆ , CeB ₆ , YB ₄ , G
borides such as dB ₄ , TiC, ZrC, HfC, TaC,
It is appropriately selected from carbides such as SiC and WC, nitrides such as TiN, ZrN and HfN, semiconductors such as Si and Ge, and carbon.

The fine particle film described here is a film in which a plurality of fine particles are aggregated. The fine structure thereof is not limited to a state in which the fine particles are individually dispersed and arranged, but the fine particles are adjacent to each other.
Alternatively, they are in an overlapping state (including a case where some fine particles are aggregated to form an island shape as a whole). The particle size of the fine particles is from several millimeters to 1 μm, preferably from 10 millimeters to 200 millimeters.

Hereinafter, an apparatus for manufacturing an electron source substrate on which a surface conduction electron-emitting device according to an embodiment of the present invention is formed will be described. FIG. 3 is a view showing an example of an apparatus for manufacturing an electron source substrate according to an embodiment of the present invention. In the figure, 11 is an ejection head unit (ejection head), 12 is a carriage,
Reference numeral 13 denotes a substrate holder, 14 denotes a substrate for forming a flat surface conduction electron-emitting device group, 15 denotes a supply tube for a solution containing a conductive thin film material, 16 denotes a signal supply cable, and 17 denotes a signal supply cable.
Is an ejection head control box, 18 is an X-direction scan motor of the carriage 12, 19 is a Y-direction scan motor of the carriage 12, 20 is a computer, 21 is a control box, and 22 (22X1, 22Y1, 22).
X2, 22Y2) are substrate positioning / holding means.

The configuration shown in FIG. 3 shows an example in which the jet head 11 moves by carriage scanning on the front surface of the substrate 14 placed on the substrate holding table 13 and jets a solution containing a conductive thin film material. is there. The ejection head 11 may be any mechanism as long as it can discharge a given amount of liquid droplets, and an ink jet type mechanism capable of forming droplets of about several tens ng is desirable. As the ink jet method, any of a piezo jet method using a piezoelectric element, a bubble jet (registered trademark) method in which bubbles are generated by using heat energy of a heater, and a charge control method (continuous flow method) may be used. .

FIG. 4 is a schematic diagram for explaining an example of the configuration of a droplet applying apparatus according to the apparatus for manufacturing an electron source substrate of the present invention. FIG. 5 is a discharge head unit of the droplet applying apparatus of FIG. FIG. 3 is a schematic configuration diagram of a main part of FIG. The configuration in FIG. 4 differs from the configuration in FIG. 3 in that the electron-emitting device group is formed on the substrate by moving the substrate 14 side. 4 and FIG.
Is an element electrode, 14 is a substrate, 30 is a discharge head unit,
31 is a head alignment control mechanism, 32 is a detection optical system, 33 is an inkjet head, 34 is a head alignment fine movement mechanism, 35 is a control computer, 36 is an image identification mechanism, 37 is an XY direction scanning mechanism, 38 is a position detection mechanism, 39 Is a position correction control mechanism, 40 is an inkjet head drive / control mechanism, 41 is an optical axis, 42 is a droplet, and 43 is a droplet landing position.

As the droplet applying device (ink jet head 33) of the ejection head unit 30, an ink jet type mechanism is desirable, as in the case of FIG. Any of a bubble jet method for generating air bubbles and a charge control method (continuous flow method) may be used.

The structure of the apparatus for moving the substrate 14 as described above will be described below. First, in FIG. 4, the substrate 14 is placed on the XY scanning mechanism 37. Substrate 14
The upper surface conduction electron-emitting device has the same configuration as that shown in FIG. 1. As a single device, the substrate 1, the device electrodes 2, 3 and the conductive thin film (fine particle film) 4 as in FIG. Has become. An ejection head unit 30 for applying liquid droplets is located above the substrate 14. In this example, the ejection head unit 30 is fixed, and the relative movement between the ejection head unit 30 and the substrate 14 is realized by moving the substrate 14 to an arbitrary position by the XY direction scanning mechanism 37.

Next, the configuration of the ejection head unit 30 will be described with reference to FIG. The detection optical system 32 captures image information on the electron source substrate 10, is close to the inkjet head 33 that ejects the droplet 42, and detects the optical axis 41 and the focal position of the detection optical system 32, The droplet 42 is disposed so as to coincide with the landing position 43 of the droplet 42. In this case, the positional relationship between the detection optical system 32 and the inkjet head 33 is determined by the head alignment fine movement mechanism 3.
4 and the head alignment control mechanism 31 allow precise adjustment. Here, the detection optical system 3
2, a CCD camera and a lens are used.

Returning to FIG. 4, the description will be continued. The image identification mechanism 36 identifies the image information captured by the detection optical system 32, and has a function of binarizing the contrast of the image and calculating the position of the center of gravity of the binarized specific contrast portion. It is. Specifically, a high-precision image recognition device manufactured by Keyence Corporation; VX-4210 can be used. A means for giving the obtained image information the position information on the substrate 14 is a position detection mechanism 38.
For this, a length measuring device such as a linear encoder provided in the XY scanning mechanism 37 can be used. The position correction control mechanism 39 performs position correction based on the image information and the position information on the substrate 14, and the movement of the XY direction scanning mechanism 37 is corrected by this mechanism. In addition, the inkjet head drive / control mechanism 40
Accordingly, the inkjet head 33 is driven, and the droplet is applied on the substrate 14. The control mechanisms described so far are centrally controlled by the control computer 35.

In the above description, the ejection head unit 30 is fixed, and the substrate 14 is moved to an arbitrary position by the XY scanning mechanism 37, thereby realizing the relative movement between the ejection head unit 30 and the substrate 14. However, needless to say, as shown in FIG. 3, the substrate 14 may be fixed and the ejection head unit 30 may scan in the X and Y directions. In particular, when the present invention is applied to the production of an image forming apparatus having a medium screen of about 200 mm × 200 mm to a large screen of 2000 mm × 2000 mm or more, the substrate 14 is fixed and the X, X It is preferable that the scanning is performed in two directions of Y, and the application of the liquid droplets is sequentially performed in such two orthogonal directions.

When the substrate size is about 200 mm × 200 mm or less, the discharge head unit for applying droplets is of a large array multi-nozzle type capable of covering a range of 200 mm, and the relative movement between the discharge head unit and the substrate is orthogonal. Relative movement can be performed only in one direction (for example, only in the X direction) without performing in two directions (X direction and Y direction), and mass productivity can be increased, but the substrate size is 200 mm × 200 mm. In the above case, it is difficult to technically and costly to manufacture a large array multi-nozzle type ejection head unit that can cover such a range of 200 mm, and the ejection head units 30 are orthogonal as described above. The scanning is performed in two directions of X and Y, and the application of the solution droplets is sequentially performed in such two orthogonal directions. It is better to have a configuration in which this is performed.

As the material of the droplet 42, an aqueous solution, an organic solvent, or the like containing the above-described element or compound that becomes a conductive thin film can be used. For example, a palladium-based element or compound as a conductive thin film is shown below, and a palladium acetate-ethanolamine complex (PA-M
E), palladium acetate-diethanol complex (PA-D
E), palladium acetate-triethanolamine complex (P
A-TE), an aqueous solution containing an ethanolamine complex such as a palladium acetate-butylethanolamine complex (PA-BE) and a palladium acetate-dimethylethanolamine complex (PA-DME), and a palladium-glycine complex (Pd- Gly), an aqueous solution containing an amine acid complex such as a palladium-β-alanine complex (Pd-β-Ala) or a palladium-DL-alanine complex (pd-DL-Ala); A butylamine solution of a propylamine complex is exemplified.

The droplets 42 are discharged from the ejection head unit 3
When a desired element electrode portion is applied by the zero inkjet head 33, the position to be applied is measured by the detection optical system 32 and the image identification mechanism 36, and the measurement data, the ejection port surface of the inkjet head 33 and the substrate Correction coordinates are generated based on the distance of 14 and the relative movement speed of both, and droplets are applied while relatively moving the substrate 14 and the inkjet head 33 according to the correction coordinates. As the detection optical system 32, a combination of a CCD camera or the like and a lens is used, and as the image identification mechanism 36, a commercially available one that binarizes an image and obtains the position of the center of gravity can be used.

As is clear from the above description, the electron source substrate of the present invention allows a solution containing an element or a compound to be a conductive thin film to fly in the air by the principle of ink jet,
It is manufactured by applying it as droplets on a substrate.

FIG. 5B shows an image in which one droplet 42 is attached between the device electrodes 2 and 3.
The electron emission portion is also shown as a round image (that is, a round image is shown as the droplet landing position 43). That is, if an electron-emitting device that does not require much accuracy is formed, the electron-emitting portion may be formed between the device electrodes 2 and 3 by a single large dot using one large droplet. For example, when the distance between the device electrodes 2 and 3 is 5 to 10 mm and the dot diameter per drop is about 8 to 15 mm, the electron emission portion may be formed by attaching one drop. In this case, a highly accurate electron-emitting device cannot be expected,
As long as it is only necessary to emit electrons, an electron-emitting device can be formed more efficiently (see FIG. 6). However, in order to form a more accurate electron-emitting device, the electron-emitting portion may be formed by a plurality of droplets, and may be formed so as to have a smooth outline.

FIG. 6 is a schematic plan view for explaining an example in which the electron-emitting device portion is formed by one droplet, and FIG. 7 is a diagram showing a dot of a flat surface conduction electron-emitting device formed according to the present invention. It is a schematic plan view which shows the example of a pattern. As a preferred example, the distance between the device electrodes 2 and 3 is 140.
μm. Then, the dot diameter when only one droplet is attached alone is set to about Φ180 μm (FIG. 6). Next, four droplets are ejected so as to form a pattern filling 140 μm between the device electrodes 2 and 3 (FIG. 7). FIG.
In the example shown by, when one dot pattern 44 of four drops is superposed and attached, one dot diameter is about Φ45 μm.

In other words, depending on the productivity or the accuracy of the target electron-emitting device, the space between the device electrodes 2 and 3 is filled with only one large droplet, or the accuracy is improved with a plurality of small droplets (four in this case). A suitable pattern may be appropriately selected. Specific conditions for forming such droplets and dots are shown below.

The solution used was an aqueous solution of palladium acetate-triethanolamine and was prepared as follows. That is, 150 g of palladium acetate is added to 3
The suspension was suspended in 000 cc of isopropyl alcohol, and 610.5 g of triethanolamine was further added, followed by stirring at 35 ° C. for 12 hours. After completion of the reaction, isopropyl alcohol was removed by evaporation, ethyl alcohol was added to the solid to dissolve and filter, and the filtrate was obtained by recrystallizing palladium acetate-triethanolamine from the filtrate. 4 g of the thus obtained palladium acetate-triethanolamine was dissolved in 96 g of pure water to form a solution (4.0 wt%).

The ejecting head used had the same structure as that of the edge shooter type thermal ink jet system (however, the above solution was used instead of ink). When the diameter of one dot is about Φ45 μm as shown in FIG. 7, the nozzle diameter is Φ25 μm, the heating element size is 25 μm × 90 μm (resistance value 121Ω),
The driving voltage was 22.6 V, the pulse width was 6 μs, the driving frequency was 10 kHz, and the energy for forming one droplet was about 2
5.3 μJ, and the jetting speed of the droplet at that time is about 7 m / s
Met.

The above conditions of the solution and the jetting are an example of a case where the distance between the device electrodes 2 and 3 is 140 μm and four drops adhere to the device electrodes 2 and 3, and the present invention is not limited to these conditions. . For example, FIG.
In this case, the distance of 3 is 140 μm, but 6 drops × 2 rows = 12 drops adhere to form the electron-emitting device. In this example, the dot diameter is about Φ22 μm. In this case, the ejection head used has a nozzle diameter of Φ14 μm, and the size of the heating element is correspondingly 14 μm × 6.
0 μm (resistance value: 102Ω), the driving voltage is 11.5 V, the pulse width is 4 μs, and the driving frequency is 16 k.
And the droplets were ejected at an energy of about 5.2 μJ for forming one droplet. The ejection speed of the droplet at that time was about 6 m / s.

Also, the distance between the device electrodes 2 and 3 is not limited to 140 μm, and it is necessary to arrange the electron-emitting devices of the electron source substrate at a high density in order to manufacture a higher definition image display device. For example, if the distance between the device electrodes 2 and 3 is 50
μm. In this case as well, the ejection head used has a nozzle diameter of Φ14 μm as described above, and the size of the heating element, driving conditions, and the like are appropriately selected in accordance therewith.

That is, in the present invention, the number of droplets to be deposited is appropriately selected from about 1 to about 30 droplets in accordance with the distance between the device electrodes 2 and 3 and the required accuracy of the electron-emitting device. It forms an element and is not limited to special conditions. The number of droplets to be attached depends on the nozzle diameter of the ejection head to be used.
It is desirable from the viewpoint of productivity that the number of droplets is kept to the order of a droplet (it is possible to attach more fine droplets, but the productivity is lowered and the cost is disadvantageous).

FIG. 9 is a view showing an example of an ejection head for performing efficient dot formation. FIG. 9 (A) is a view showing an assembled ejection head, and FIG. 9 (B) is a view showing FIG. 9 (A). 9) is an exploded view of the ejection head, and FIG. 9C is a diagram showing the lid substrate shown in FIG. 9B inverted upside down. The ejection head used in the present invention will be described with reference to FIG. Here, an example is shown in which the number of nozzles of the ejection head is four. In FIG.
51 is a heating element substrate, 52 is a lid substrate, 50 is a heating element substrate 5
An injection head (ink-jet head) formed by joining the first substrate 1 and the lid substrate 52; 53, a silicon substrate used for forming the heating element substrate 51;
5 is a common electrode, 56 is a heating element, 57 is a solution inlet, 58
Denotes a nozzle, 59 denotes a groove, and 60 denotes a concave region. The heating element substrate 51 is configured by forming an individual electrode 54, a common electrode 55, and a heating element 56 as an energy action section on a silicon substrate 53 by a wafer process.

On the other hand, the lid substrate 52 has a groove 59 for forming a flow channel into which a solution containing an element or a compound to be a conductive thin film is introduced, and a common groove for accommodating the solution introduced into the flow channel. A concave region 60 for forming a liquid chamber (not shown) is formed, and the heating element substrate 51 and the lid substrate 52 are joined as shown in FIG. A common liquid chamber is formed. In a state where the heating element substrate 51 and the lid substrate 52 are joined, the heating element 56 is located on the bottom surface of the flow path, and the end of the flow path is provided with the solution introduced into these flow paths. A nozzle 58 for discharging a part as a droplet is formed. The lid substrate 52 has a solution inlet 57 for supplying a solution into the supply liquid chamber by a supply unit (not shown).

In this example, a four-nozzle ejection head is shown. If such a multi-nozzle ejection head is used, an electron-emitting device can be formed very efficiently. Although this example shows a four-nozzle ejection head, it is not necessarily limited to four nozzles. Needless to say, the larger the number of nozzles, the more efficient the formation of electron-emitting devices. However, this does not mean simply increasing the number of nozzles. Increasing the number of nozzles increases the cost of the ejection head and increases the probability of clogging of the ejection nozzles. (A balance of element manufacturing efficiency).

In addition to the number of nozzles, the same consideration is required for the nozzle array length (effective ejection width of the ejection head). That is, it is not necessary to simply increase the length of the nozzle array (effective ejection width of the ejection head). Can be

As an example, in the present invention, the number of nozzles and the number of nozzles are set so that the nozzle array length of the multi-nozzles (effective ejection width of the ejection head) is equal to or greater than the distance between the element electrodes 2 and 3. The array density is determined. However, to be larger than that here does not mean that it is unlimitedly large, but that it is slightly larger than the distance between the device electrodes 2 and 3. In other words, the basic idea of the present invention is to minimize the cost of the ejection head by using an ejection head having a nozzle array arrangement length (effective ejection width of the ejection head) equivalent to the distance between the element electrodes 2 and 3. Hold down
In addition, by making the nozzle row arrangement length (effective ejection width of the ejection head) equal to the distance between the element electrodes 2 and 3, an electron-emitting device can be manufactured efficiently.

More specific numerical values will be described in the case where four droplets are ejected so as to form a pattern filling 140 μm between the device electrodes 2 and 3 as described above. in this case,
In the present invention, the nozzle row arrangement length of four nozzles shown in FIG. 9 (effective ejection width of the ejection head, in other words, the distance between the nozzles at both ends) is about 127 μm (14 of the element electrodes 2 and 3).
The distance between the nozzles is about 42.3 μm. That is, in this case, as the ejection head, 600 dpi (dot per in
ch) A nozzle having a corresponding nozzle array density is used.

Although the above description has been made with reference to the four-nozzle ejection head shown in FIG. 9, the distance between each nozzle is about 42.3 μm
It is also conceivable to use a six-nozzle ejection head. In this case, the nozzle array length of the six nozzles (the effective ejection width of the ejection head, in other words, the distance between the nozzles at both ends) is about 212 μm (which can be considered to be larger than the interval between 140 μm of the element electrodes 2 and 3). The distance between the electrodes 2 and 3 is sufficiently covered by the length of the array of nozzles, so that the electron-emitting device can be manufactured efficiently.

FIGS. 10 to 12 are schematic plan views for explaining an electron source substrate and a method of manufacturing the same according to an embodiment of the present invention. In the embodiment shown in FIG. 10, a spray application pattern using a solution is formed outside a region where a surface conduction electron-emitting device group is formed. As shown in FIG. Electron source substrate formed with a surface conduction type electron-emitting device group having a plurality of pairs of device electrodes 2 and 3 arranged in a pair and a conductive thin film 4 sprayed and formed between each pair of device electrodes 2 and 3 In this case, the area where the jet is applied is wider than the area where the surface conduction electron-emitting device group is formed.

The electron source substrate 10 includes, in particular, a plurality of pairs of device electrodes 2 and 3 arranged on the substrate 10 and a conductive thin film 4 formed by spraying between each pair of device electrodes 2 and 3. A surface conduction electron-emitting device group having the surface conduction electron-emitting device group, wherein the surface conduction electron-emitting device group is formed on the electron source substrate and sprayed to the outside Xa, Xb, Ya, Yb outside the regions X, Y where the surface conduction electron-emitting device group is formed. A pattern is formed by droplets of the solution so that the electron source substrate 10 can be distinguished for each substrate or for each of a plurality of substrate groups.

In the manufacturing method, a plurality of pairs of device electrodes 2 and 3 are arranged on a substrate 10, and a droplet of a solution containing the material of the conductive thin film 4 is placed between each pair of device electrodes 2 and 3. A method for manufacturing an electron source substrate in which a surface conduction electron-emitting device group is formed by the conductive thin film 4 by spraying, wherein Xa outside the regions X and Y where the surface conduction electron-emitting device group is formed. , Xb, Ya, and Yb are sprayed to form a pattern that enables the electron source substrate 10 manufactured by the method for manufacturing an electron source substrate to be distinguished for each substrate or for each of a plurality of substrate groups. It is something to do.

FIG. 10A is a diagram showing the arrangement of electron-emitting devices on the electron source substrate and the pattern for applying the jet, and FIG. 10B is an enlarged view of the pair of electron-emitting devices shown in FIG. 1
0 (C) is a diagram showing the nozzle arrangement of the ejection head.
58 is a nozzle of the ejection head.

As described above with reference to FIGS. 3 and 4, in the present invention, the ejection head applies droplets while relatively moving with respect to the substrate 14 (electron source substrate 10) to form the electron-emitting device group. Form. FIG. 10 shows the device electrodes 2 and 3 formed on the electron source substrate 10 and the electron-emitting device group formed between the device electrodes 2 and 3 by applying four droplets in the vertical direction (sub-scanning direction). The drawing also shows the ejection head as viewed from the nozzle surface. Here, the horizontal direction is defined as the main scanning direction.

For simplicity of description, here, the relative movement between the ejection head and the substrate 14 (electron source substrate 10) is placed on the front surface of the substrate 14 as shown in FIG. An example in which the head applies droplets while moving in the main scanning direction and the sub-scanning direction to form an electron-emitting device group will be described.

As described above, in FIG.
An electron-emitting device group formed by applying four droplets in the vertical direction (sub-scanning direction) is shown between the electron-emitting device groups. In addition to the formation, other patterns are intended to be formed using the same ejection head.

Therefore, as shown in FIG.
The region Y is a region where the electron-emitting devices are formed in the main scanning direction and the sub-scanning direction, respectively.
A small space is provided outside the electron-emitting-element-group-forming region, such as the region Xb, the region Ya, and the region Yb, and the ejection head mounted on the carriage applies droplets while moving in the main scanning direction and the sub-scanning direction. Also in this case, the carriage scanning can be performed even in these areas Xa, Xb, Ya, and Yb, and the same solution as the solution sprayed for forming the electron-emitting device group is sprayed in those areas. An electron source substrate manufacturing method and apparatus that can be provided. In addition, the substrate 14 (electron source substrate 10) used is not limited to the one in which the electron-emitting device group is formed, and has a small space outside the electron-emitting device group formation region.

By using the electron source substrate manufacturing apparatus, the manufacturing method used in the manufacturing apparatus, and the substrate as described above, the ejection head is not limited to simply forming a pattern for forming an electron-emitting device group, but also forming other patterns. Formation can also be performed. For example, pattern formation for distinguishing each substrate from other substrates can be performed. As a more specific example, FIG. 10 shows “123” as the substrate discriminating pattern. However, the production number, the production date, and the like can be formed on each substrate by an ejection head. Needless to say, the present invention is not limited to such numbers and characters, but may be a symbol or a symbol as long as it is used for distinguishing one by one or a plurality of sheets.

Normally, such a serial number or the like is affixed or engraved on the completed component unit with a nameplate. However, as in the present invention, a component requiring extremely high precision and cleanliness is required. In the manufacture of the unit (electron emission substrate), if a process such as attaching a nameplate or engraving is performed later, contamination of the electron source emission substrate due to contamination during the work or dust and the like in the air Performance may not be maintained. However, in the present invention, such a serial number can be given at the same time when the electron-emitting device group is formed. Therefore, the same environment as the environment in which the electron-emitting device group is formed (normally, a clean room of a class of about 100 to 1000) is maintained. Since such a process (a process of assigning a serial number or the like) can be performed as it is, there is no problem such as contamination of the manufactured electron source substrate, and an extremely high-performance electron source substrate can be manufactured. In addition, since it is not necessary to perform engraving with another device later as in the related art, it is very efficient and the manufacturing cost can be reduced.

FIG. 11 is a schematic plan view for explaining an electron source substrate and a method of manufacturing the same according to the present invention. In the present embodiment, an outer side of a region where a surface conduction electron-emitting device group is formed is shown. The electron source substrate 10 has a plurality of pairs of device electrodes 2 and 3 disposed on the substrate 10 and a plurality of pairs of device electrodes 2 and 3 between each pair of device electrodes 2 and 3, as shown in FIG. An electron source substrate formed with a surface conduction electron-emitting device group having a conductive thin film 4 formed by spraying on the surface of the substrate, wherein the surface conduction electron-emitting device group is formed outside the regions X and Y. Xa, Xb, Ya, and Yb are provided with one or more pairs of device electrodes 2 and 3 and another surface conduction type electron-emitting device using the conductive thin film 4 between each pair of device electrodes 2 and 3. Alternatively, the group of electron-emitting devices may be It is obtained by forming for performance check of the element group.

In the manufacturing method, a plurality of pairs of device electrodes 2 and 3 are arranged on a substrate 10, and a droplet of a solution containing the material of the conductive thin film 4 is sprayed between each pair of device electrodes 2 and 3. And forming a surface conduction electron-emitting device group using the conductive thin film 4, wherein the surface conduction electron-emitting device group is formed in a region X, Y outside Xa,
One or more pairs of device electrodes 2 and 3 are arranged on Xb, Ya and Yb, and a droplet of a solution containing the material of the conductive thin film 4 is sprayed between each pair of device electrodes 2 and 3. By doing so, another surface conduction type electron-emitting device or electron emission device group for checking the performance of the surface conduction type electron-emitting device group is formed.

FIG. 11 shows an electron-emitting device group formed by applying four droplets in the vertical direction (sub-scanning direction) between the device electrodes 2 and 3 similarly to FIG. 10 described above. According to the invention, a small space is provided also in the region Xa other than the region X and the region Y, the region Xb, the region Ya, and the region Yb other than the region Y where the electron-emitting device group is formed, that is, outside the electron-emitting device group formation region.
A plurality of similar device electrodes are formed thereon, and a droplet of a solution containing the material of the conductive thin film is sprayed between the device electrodes, thereby forming the same device electrode and conductive material as the electron-emitting device. In the illustrated embodiment, a pattern of a conductive thin film is provided at four locations.

As described above, the reason why the same pattern of the device electrode and the conductive thin film as the electron-emitting device is formed outside the region where the electron-emitting device group is formed is as follows. This is because the check of the function or the like is performed using this pattern. Although it is certain that all the formed electron-emitting devices are checked, it takes a very long time and is very expensive. However, in the present invention, such a check-only pattern is provided, and not all elements are checked, but the check is performed using this pattern. Therefore, the check is completed in a short time. What is checked is, for example, the current flowing when a voltage is applied between the electrodes of the pattern after the completion of the energization forming process.

In this example, the check pattern is described as an example of the same element as the electron-emitting device group. However, it is not always necessary to make the pattern exactly the same. May be.
Also, the number does not necessarily have to be four. However,
Rather than forming a check pattern in only one place and checking, forming such a check pattern in the four corners as in this example and checking it is advantageous for checking the performance of a large-area substrate. It is. Especially 200mm ×
In the case of an electron source substrate smaller than about 200 mm, it may be located at one place, but for a substrate larger than that, a plurality of check patterns should be dispersed in order to ensure constant quality of the entire substrate over a wide range. Is desirable. The reason for providing such a check pattern in the first place is to check whether a plurality of elements manufactured over a wide area are made uniform regardless of the location.

As is apparent from the above description, the electron source substrate of the present invention is manufactured by spraying droplets of a solution containing a material of a conductive thin film between a plurality of pairs of device electrodes on the substrate. However, the electron source substrate is configured to be slightly larger than the area where the surface conduction electron-emitting devices are formed, and it is possible to form various patterns by spraying such solution droplets on the outside of the area. A substrate and a method and apparatus for manufacturing the same are also a manufacturing method and apparatus capable of spraying a liquid droplet onto the outside of the region. Then, after the droplets of the solution containing the material of the conductive thin film are jetted and applied, the electron emitting portion 5 is formed by a forming process described below in the present invention (see FIGS. 1 and 2). .

The electron-emitting portion 5 is constituted by a high-resistance crack formed in a part of the conductive thin film 4 and depends on the thickness, film quality, material, etc. of the conductive thin film 4 or the forming processing conditions. Becomes The inside of the electron emission section 5 has 10
It may contain conductive fine particles having a particle size of not more than 00 °. The conductive fine particles contain some or all of the elements of the material constituting the conductive thin film 4. The electron emitting portion 5 and the conductive thin film 4 in the vicinity thereof may contain carbon or a carbon compound.

As an example of the forming method applied to the conductive thin film 4, a method using an energization process will be described. When current is applied between the device electrodes 2 and 3 using a power supply (not shown), the electron emitting portion 5 having a changed structure
Is formed. That is, according to the energization forming, a portion of the conductive thin film 4 where a structural change such as destruction, deformation or alteration is locally formed, and this portion becomes the electron emission portion 5.

FIG. 13 is a diagram showing an example of a voltage waveform of the energization forming process as described above applied to the present invention. The voltage waveform is particularly preferably a pulse waveform. When a voltage pulse having a constant pulse peak value is continuously applied (FIG. 13)
(A)) and a case where a voltage pulse is applied while increasing the pulse peak value (FIG. 13 (B)). First, the case where the pulse crest value is a constant voltage (FIG. 13A) will be described.

In FIG. 13A, T1 and T2 are the pulse width and pulse interval of the voltage waveform, respectively.
μs to 10 ms, T2 is set to 10 μs to 100 ms, and the peak value of the triangular wave (peak voltage at the time of energization forming) is appropriately selected according to the form of the surface conduction electron-emitting device. Under such conditions, for example, a voltage is applied for several seconds to tens of minutes. Further, the pulse waveform is not limited to a triangular wave, and a desired waveform such as a rectangular wave may be used.

T1 and T2 in FIG. 13B indicate the pulse width and pulse interval of the voltage waveform, respectively, as in FIG. 13A, and the peak value of the triangular wave (peak voltage during energization forming). Can be increased by, for example, about 0.1 V steps.

The end of the energization forming process can be detected by applying a voltage that does not locally destroy or deform the conductive thin film 4 during the pulse interval T2, and measuring the current. For example, the device current flowing when a voltage of about 0.1 V is applied is measured, and the resistance value is calculated. When the resistance value indicates 1 MΩ or more, the energization forming is terminated.

It is desirable to perform a process called an activation process on the device after the energization forming. By performing the activation process, the device current If and the emission current Ie change significantly. The activation step can be performed, for example, by repeatedly applying a pulse in an atmosphere containing an organic substance gas, similarly to the energization forming. The above atmosphere can be formed by using an organic gas remaining in the atmosphere when the inside of the vacuum vessel is discarded using, for example, an oil diffusion pump or a rotary pump, or sufficiently exhausted once by an ion pump or the like. It can also be obtained by introducing a gas of an appropriate organic substance into a vacuum. The preferable gas pressure of the organic substance at this time varies depending on the above-described application form, the shape of the vacuum vessel, the type of the organic substance, and the like, and is appropriately set according to the case.

Examples of the above organic substances include organic hydrocarbons such as aliphatic hydrocarbons of alkane, alkene and alkyne, aromatic hydrocarbons, alcohols, aldehydes, ketones, amines, phenol, carboxylic acid, sulfonic acid and the like. acids and the like are preferable. Specifically, methane, ethane, C _n H _{2n + 2} represented by saturated hydrocarbons, ethylene, propylene C _n H _2n such unsaturated hydrocarbons represented by the composition formula such as propane , Benzene, toluene, methanol, formaldehyde, acetaldehyde, acetone, methyl ethyl ketone, methylamine, ethylamine, phenol, formic acid,
Acetic acid, propionic acid and the like can be used. By this treatment, carbon or a carbon compound is deposited on the device from the organic substance existing in the atmosphere, and the device current If and the emission current Ie are significantly changed. The end of the activation step is determined while measuring the device current If and the emission current Ie. Note that the pulse width, pulse interval, pulse peak value, and the like are set as appropriate.

The carbon or carbon compound includes graphite (both single crystal and polycrystal) and amorphous carbon (carbon including amorphous carbon and a mixture of amorphous carbon and the fine crystals of graphite). The thickness is preferably set to 500 ° or less, more preferably 3 °.
00 ° or less.

It is preferable that the electron-emitting device thus manufactured is subjected to a stabilization process. This treatment is preferably performed at a partial pressure of the organic substance in the vacuum vessel of 1 × 10 ⁻⁸ Torr or less, preferably 1 × 10 ⁻¹⁰ Torr or less. The pressure in the vacuum vessel is preferably 10 ^-6 to 10 ^-7 Torr or less, and particularly preferably 1 × 10 ^-8 Torr or less. It is preferable to use a vacuum evacuation device that does not use oil so that the oil generated from the device does not affect the characteristics of the element. Specifically, a vacuum exhaust device such as a sorption pump and an ion pump can be used. Further, when evacuating the inside of the vacuum vessel, it is preferable to overheat the entire vacuum vessel to facilitate evacuating the organic substance molecules adsorbed on the inner wall of the vacuum vessel and the electron-emitting device. The evacuation conditions in the heated state at this time are desirably 5 hours or more at 80 to 200 ° C., but are not particularly limited to these conditions. It changes with.

The partial pressure of the organic substance is determined by measuring the partial pressure of organic molecules having a mass number of 10 to 200 and mainly containing carbon and hydrogen by a mass spectrometer, and integrating these partial pressures. Desired. After the stabilization step, it is preferable that the atmosphere at the time of driving maintain the atmosphere at the end of the stabilization process, but the present invention is not limited to this. Even if it is slightly reduced, it is possible to maintain sufficiently stable characteristics. By employing such a vacuum atmosphere, deposition of new carbon or a carbon compound can be suppressed, and as a result, the device current If and the emission current Ie are stabilized.

Next, the image display device of the present invention will be described. An image display device according to an embodiment of the present invention includes an electron source substrate 10 according to some of the above-described embodiments, and a face plate (a plate to be described later) that is disposed to face the electron source substrate 10 and has a phosphor mounted thereon. 76).

Various arrangements of the electron-emitting devices of the electron source substrate used in the image display device can be adopted. First, a large number of electron-emitting devices arranged in parallel are connected at both ends, a large number of rows of electron-emitting devices are arranged (referred to as a row direction), and electrons are arranged in a direction orthogonal to the wiring (referred to as a column direction). There is a ladder-like arrangement in which electrons from the electron-emitting device are controlled and driven by a control electrode (also called a grid) arranged above the emitting device. Separately, a plurality of electron-emitting devices are arranged in a matrix in the X direction and the Y direction, and one of the electrodes of the plurality of electron-emitting devices arranged in the same row is commonly connected to a wiring in the X direction. One example is one in which the other of the electrodes of the plurality of electron-emitting devices arranged in the same column is commonly connected to a wiring in the Y direction. Such is the so-called simple matrix arrangement. First, the simple matrix arrangement will be described in detail below.

FIG. 14 is a view showing an example of an electron source substrate obtained by arranging a plurality of electron-emitting devices of the present invention in a matrix. In FIG.
Denotes an X-direction wiring, 62 denotes a Y-direction wiring, 63 denotes a surface conduction electron-emitting device, and 64 denotes a connection. The X-direction wiring 61
X1, DX2,..., DXm
The direction wiring 62 is composed of n wirings DY1, DY2,... DYn. Further, the material, the film thickness, and the wiring width are appropriately set so that a substantially uniform voltage is supplied to many surface conduction type elements 63. These m X-directional wires 61 and n Y wires
The direction wirings 62 are electrically separated by an interlayer insulating layer (not shown) to form a matrix wiring (note that m,
n is a positive integer).

The interlayer insulating layer (not shown) is formed on the entire surface of the substrate 14 on which the X-directional wiring 61 has been formed or on a part of a desired region. The X-direction wiring 61 and the Y-direction wiring 62 are respectively drawn as external terminals. Further, the device electrodes (not shown) of the surface conduction electron-emitting device 63 are electrically connected to the m X-direction wires 61 and the n Y-direction wires 62 by the connection 64. The material forming the X-direction wiring 61 and the Y-direction wiring 62, the material forming the connection 64, and the material forming the pair of element electrodes are different even if some or all of the constituent elements are the same. May be. These materials are appropriately selected from, for example, the above-described materials for the element electrodes. When the material forming the element electrode and the wiring material are the same, the element electrode can be called the element electrode including the wiring connected to the element electrode.

The X-direction wiring 61 is electrically connected to a scanning signal generating means (not shown) for applying a scanning signal for scanning a row of the surface conduction electron-emitting devices 63 arranged in the X direction according to an input signal. ing. On the other hand, the Y-direction wiring 62 is electrically connected to a modulation signal generating means (not shown) for applying a modulation signal for modulating each column of the surface conduction electron-emitting devices 63 arranged in the Y direction according to an input signal. ing. Further, the drive voltage applied to each element of the surface conduction electron-emitting device 63 is supplied as a difference voltage between a scanning signal and a modulation signal applied to the element. As a result, individual elements can be selected and driven independently using only simple matrix wiring.

Next, a description will be given of an image display apparatus using the electron sources of the simple matrix arrangement prepared as described above. FIG. 15 is a view for explaining an example of the basic configuration of the display panel of the image display device. A rear plate, 72 is a support frame, 76 is a fluorescent film 74 and a metal back 75 on the inner surface of a glass substrate 73.
The face plate on which the rear plate 7 is formed
1, frit glass or the like is applied to the support frame 72 and the face plate 76, and 400 to 50 in the air or in nitrogen.
The envelope 78 is formed by baking at 0 degree for 10 minutes or more to seal. In FIG. 15, reference numeral 63 denotes an electron-emitting device corresponding to the structure shown in FIG. 1; is there.

The envelope 78 is composed of the face plate 76, the support frame 72, and the rear plate 71 as described above. However, since the rear plate 71 is provided mainly for the purpose of reinforcing the strength of the electron source substrate 10, the envelope 78 is If the source substrate 10 itself has a sufficient strength, the separate rear plate 71 is unnecessary, and the support frame 71 is directly sealed to the electron source substrate 10, and the face plate 76, the support frame 72, and the electron source substrate 10 are attached. The envelope 78 may be configured by the following method. Further, by installing an anti-atmospheric pressure support member called a spacer between the face plate 76 and the rear plate 71, an envelope 78 having sufficient strength against atmospheric pressure can be formed.

FIG. 16 is a schematic diagram showing an example of the structure of a fluorescent film used in the image display device of FIG. 15, in which a black stripe type fluorescent film is shown in FIG. 16A and a black matrix type fluorescent film is shown in FIG. This is shown in FIG.
In FIG. 16, 74 is a fluorescent film, 81 is a black conductive material, 8
2 is a phosphor.

The fluorescent film 74 is made of only a fluorescent material in the case of a monochrome image. However, in the case of a color fluorescent film, a black conductive material 81 called a black stripe or a black matrix and a fluorescent material 82 are used depending on the arrangement of the fluorescent materials. Be composed. The purpose of providing the black stripes and the black matrix is to make the color separation between the phosphors 82 of the necessary three primary color phosphors black in the case of color display so that color mixing and the like become inconspicuous. The purpose is to suppress a decrease in contrast due to light reflection. The material of the black stripe is not limited to the commonly used material containing graphite as a main component, as long as it is conductive and has little light transmission and reflection.

In the present invention, the directions of the stripes of the phosphors 82 formed as a matrix as described above, or two directions orthogonal to each other of the matrix, and the two directions orthogonal to each other of the electron-emitting device 63 are parallel to each other. , And the phosphors 82 are positioned and laminated so as to coincide with the respective electron-emitting devices 63 to form an image display device. In the image display device having such a configuration, since the directions and positions of the matrices match each other,
A very high-quality image display device can be realized.

As a method of applying the phosphor on the glass substrate 73, a precipitation method or a printing method is used regardless of monochrome or color. A metal back 75 is usually provided on the inner surface side of the fluorescent film 74 (FIG. 15). Metal back 7
5 is to improve the luminance by mirror-reflecting the light emitted from the phosphor toward the inner surface side to the face plate 76 side, to act as an electrode for applying an electron beam acceleration voltage, It has a role of protecting the phosphor from damage due to the collision of negative ions generated in the above. After fabricating the fluorescent film 74, the metal back 75 smoothes the inner surface of the fluorescent film 74 (usually called filming).
And then depositing Al by vacuum evaporation or the like. The face plate 76 may be provided with a transparent electrode (not shown) on the outer surface side of the fluorescent film 74 in order to further increase the conductivity of the fluorescent film 74.

When the sealing for forming the envelope 78 is performed, in the case of color, the phosphors 82 of each color must correspond to the electron-emitting devices 63, and sufficient alignment must be performed. There is. In order to perform this sufficient alignment, according to the present invention, as described above, the phosphor 82 is arranged at a position facing the electron-emitting device 63 and the electron-emitting device 6
The two orthogonal directions of the matrix of the phosphor 3 and the matrix of the phosphor 82 are parallel to each other.
In order to obtain a highly accurate image display device having such a configuration, it is desirable that the phosphor substrate also employs the same positioning technique as the electron source substrate of the present invention.

The image display device shown in FIG. 15 is specifically manufactured as follows. The envelope 78 is evacuated through an exhaust pipe (not shown) by an exhaust device that does not use oil, such as an ion pump and a sorption pump, while being appropriately heated, similarly to the above-described stabilization process, and the degree of vacuum is about 10 ⁻⁷ Torr. After the atmosphere of the organic material is made sufficiently small, the substrate is sealed. In some cases, a getter process is performed to maintain the degree of vacuum after sealing the envelope 78. This is done by heating a getter disposed at a predetermined position (not shown) in the envelope 78 by a heating method such as resistance heating or high-frequency heating immediately before or after sealing of the envelope 78, and performing vapor deposition. This is a process for forming a film. A getter typically contains Ba as a principal component, by the adsorption action of the evaporated film, for example, 1 × 10 ^-5 Tor
The vacuum degree of r to 1 × 10 ⁻⁷ Torr is maintained.

Next, a display panel constituted by using an electron source having a simple matrix arrangement type substrate is driven to drive the NTS.
A schematic configuration of a driving circuit for performing television display based on a C-system television signal will be described. Figure 17 shows NTSC
FIG. 2 is a block diagram illustrating an example of a driving circuit for performing display according to a television signal of a system, and illustrates an image display device including the driving circuit. 17, reference numeral 91 denotes an image display panel; 92, a scanning circuit; 93, a control circuit; 94, a shift register; 95, a line memory; It is a voltage source.

The function of each unit shown in FIG. 17 will be described below. The display panel 91 is connected to an external electric circuit via terminals Dox1 to Doxm, terminals Doy1 to Doyn, and a high voltage terminal Hv. Terminal Dox1
The Doxm is used to sequentially drive electron sources provided in the display panel 91, that is, a group of surface conduction electron-emitting devices arranged in a matrix of M rows and N columns one by one (N elements). A scanning signal is applied. on the other hand,
To the terminals Doy1 to Doyn, a modulation signal for controlling an output electron beam of each element of the surface conduction electron-emitting device in one row selected by the scanning signal is applied.
The high voltage terminal Hv is connected to the DC voltage source Va by, for example, 10
A DC voltage of kV is supplied, which is an accelerating voltage for applying sufficient energy to the electron beam output from the surface conduction electron-emitting device to excite the phosphor.

Next, the scanning circuit 92 will be described. This circuit has M switching elements inside (in the drawing, S1 to Sm are schematically shown), and each switching element is an output voltage of a DC voltage source Vx or 0V.
(Ground level), and is electrically connected to the terminals Dox1 to Doxm of the display panel 91. Each of the switching elements S1 to Sm operates based on the control signal Tscan output from the control circuit 93, but can be actually configured by combining switching elements such as FETs, for example. Note that the DC voltage source Vx is a characteristic (electron emission threshold voltage) of the surface conduction electron-emitting device.
Is set so as to output a constant voltage such that the drive voltage applied to the element that is not scanned is equal to or lower than the electron emission threshold voltage.

The control circuit 93 has a function of coordinating the operation of each part so that an appropriate display is performed based on an externally input image signal. Based on a synchronization signal Tsync sent from a synchronization signal separation circuit 96 described later, Tscan, Tsft, and Tmr
Generate y control signals.

The synchronizing signal separating circuit 96 is a circuit for separating a synchronizing signal component and a luminance signal component from an NTSC television signal input from the outside, and can be formed by using a frequency separating (filter) circuit. The synchronizing signal separated by the synchronizing signal separating circuit 96 is composed of a vertical synchronizing signal and a horizontal synchronizing signal, as is well known, but is shown here as a Tsync signal for convenience of explanation. On the other hand, the luminance signal component of the image separated from the television signal is referred to as a DATA signal for convenience.
Is input to

The shift register 94 is for serially / parallel-converting the DATA signal input serially in time series for each line of an image, and is based on a control signal Tsft sent from the control circuit 93. Operate. That is, the control signal Tsft is
May be rephrased as the shift clock. One line of serial / parallel converted image (electron emitting element N
(Corresponding to the drive data for the elements) is output from the shift register 94 as N parallel signals Id1 to Idn.

The line memory 95 is a storage device for storing data for one line of an image for a required time only, and stores the contents of Id1 to Idn as appropriate according to a control signal Tmry sent from the control circuit 93. The stored contents are output as Id'1 to Id'n and input to the modulation signal generator 97.

The modulation signal generator 97 outputs the image data I
It is a signal source for appropriately driving and modulating each of the surface conduction electron-emitting devices in accordance with each of d1 to Idn. Applied.

As described above, the electron-emitting device according to the present invention has the following basic characteristics with respect to the emission current Ie. That is, as described above, electron emission has a clear threshold voltage Vth, and electron emission occurs only when a voltage higher than Vth is applied. For a voltage equal to or higher than the electron emission threshold, the emission current also changes according to the change in the voltage applied to the element. The electron emission threshold voltage Vth can be changed by changing the material, configuration, and manufacturing method of the electron emission element.
In some cases, the degree of change of the emission current with respect to the value or the applied voltage changes, but in any case, the following can be said.

That is, when a pulse-like voltage is applied to the device, for example, when a voltage lower than the electron emission threshold is applied, no electron emission occurs, but when a voltage higher than the electron emission threshold is applied. Outputs an electron beam. At that time, first, it is possible to control the intensity of the output electron beam by changing the peak value Vm of the pulse,
Second, it is possible to control the total amount of charges of the output electron beam by changing the pulse width Pw.

Therefore, as a method of modulating the electron-emitting device in accordance with the input signal, there are a voltage modulation method, a pulse width modulation method, and the like. A voltage modulation circuit that generates a voltage pulse having a length corresponding to the pulse length, and modulates the peak value of the pulse appropriately according to input data is used. In order to implement the pulse width modulation method, the modulation signal generator 97 generates a voltage pulse having a constant peak value, but a pulse width that modulates the width of the voltage pulse appropriately according to input data. A modulation type circuit is used.

The shift register 94 and the line memory 95
The image signal may be of a digital signal type or an analog signal type, as long as the serial / parallel conversion and storage of the image signal are performed at a predetermined speed.

When a digital signal type is used,
It is necessary to convert the output signal DATA of the synchronization signal separation circuit 96 into a digital signal. This can be achieved by providing an A / D converter at the output of the synchronization signal separation circuit 96. In connection with this, the circuit used for the modulation signal generator 97 is slightly different depending on whether the output signal of the line memory 95 is a digital signal or an analog signal.

First, the case of a digital signal will be described.
In the voltage modulation method, for example, a well-known D / A conversion circuit may be used as the modulation signal generator 97, and an amplification circuit or the like may be added as necessary. In the case of the pulse width modulation method, the modulation signal generator 97 includes, for example, a high-speed oscillator,
A counter for counting the number of waves output by the oscillator,
And a circuit combining a comparator (comparator) for comparing the output value of the counter with the output value of the line memory 95. If necessary, an amplifier may be added to amplify the pulse width modulated signal output from the comparator to the drive voltage of the surface conduction electron-emitting device.

Next, the case of an analog signal will be described.
In the voltage modulation method, for example, an amplification circuit using a well-known operational amplifier or the like may be used as the modulation signal generator 97, and a level shift circuit or the like may be added as necessary. In the case of the pulse width modulation method, for example, a well-known voltage-controlled oscillator (VCO) may be used. May be added.

In the image display device having the above-described configuration, each of the electron-emitting devices of the display panel 91 is provided with external terminals Dox1 to Doxm, Doy1 to Doyn.
Through the high voltage terminal Hv to apply a high voltage to the metal back 75 or a transparent electrode (not shown) to accelerate the electron beam, collide with the fluorescent film 74, and excite An image can be displayed by emitting light.

The configuration described here is a schematic configuration necessary for producing a suitable image display device used for display or the like. For example, detailed portions such as materials of each member are not limited to those described above. Instead, it is appropriately selected so as to be suitable for the use of the image display device. Although the NTSC system has been described as an example of an input signal, the present invention is not limited to this, and PAL, SECA
Various systems such as the M system may be used, and a TV signal composed of a larger number of scanning lines (for example, a high-definition TV including the MUSE system) may be used.

Next, the ladder-type arranged electron source substrate and the image display device will be described. FIG. 18 is a schematic diagram showing a configuration example of an electron source substrate in which electron emission elements are arranged in a ladder shape. In the figure, reference numeral 10 denotes an electron source substrate, 14 denotes a substrate, 63 denotes an electron emission element, and 98 denotes an electron emission element. Dx1 to Dx1 connected to
0 is a common wiring. A plurality of electron-emitting devices 63 are arranged on the substrate 14 in parallel in the X direction (this arrangement is called an element row). A plurality of the element rows are arranged on a substrate to form an electron source substrate 10. By applying a drive voltage between the common wires of each element row, each element row can be driven independently. In other words, a voltage equal to or higher than the electron emission threshold may be applied to an element row in which an electron beam is to be emitted, and a voltage equal to or lower than the electron emission threshold may be applied to an element row in which an electron beam is not emitted. Further, the common wirings Dx2 to Dx9 between the element rows, for example, Dx2 and Dx3 may be the same wiring.

FIG. 19 is a diagram for explaining a panel structure in an image display device provided with a ladder-type arranged electron source substrate as shown in FIG. 18. In FIG. An electron source substrate, 101 is a grid electrode, 102 is an opening through which electrons pass, and 103 is D
ox1, Dox2,... Doxm, outer terminals of the container, 104 are G1, G connected to the grid electrode 101
2,... External terminals made of Gn.
Alternatively, parts having the same functions as those in FIG. 18 are denoted by the same reference numerals. The image display device shown in FIG. 19 is different from the image display device having the simple matrix arrangement (FIG. 15) in that a grid electrode 101 is provided between the electron source substrate 100 and the face plate 76.

The grid electrode 101 is for modulating the electron beam emitted from the surface conduction electron-emitting device. For this purpose, one circular opening 102 is provided for each element. The shape and installation position of the grid are not limited to those shown in FIG. For example, a large number of passage openings may be provided in a mesh shape as openings, and a grid may be provided around or near the surface conduction electron-emitting device. In addition, terminal 103 outside the container and terminal 104 outside the grid container
Are electrically connected to a control circuit (not shown).

In this image display device, a modulation signal for one line of an image is simultaneously applied to the grid electrode rows in synchronization with the sequential driving (scanning) of the element rows one by one. Thereby, the irradiation of each electron beam to the phosphor is controlled, and the image is reduced to one.
Can be displayed line by line. According to this, in addition to a display device of a television broadcast, a video conference system, a display device of a computer, etc., it can also be used as an image display device as an optical printer configured using a photosensitive drum or the like.

FIG. 12 is a schematic plan view showing the structure of an electron source substrate according to an embodiment of the present invention. The second surface is located outside the region where the surface conduction electron-emitting device group is formed. FIG. 4 is a diagram showing an example in which a conduction type electron-emitting device group is formed.
As described above, the electron source substrate used in the present invention has a droplet of a solution containing the material of the conductive thin film also in a region wider (outer) than the region where the surface conduction electron-emitting device group is formed. Is sprayed to form a surface conduction type electronic element using a conductive thin film.

The image display device of this embodiment is formed by spraying a conductive solution between a plurality of pairs of device electrodes 2 and 3 arranged on a substrate and between each pair of device electrodes 2 and 3. The plurality of pairs of the electron source substrates 10 and 100 on which the surface conduction electron-emitting device group having the conductive thin film 4 is formed, and outside the region where the surface conduction electron-emitting device group is formed. A second plurality of pairs of device electrodes different from the device electrodes are arranged, and a droplet of a conductive solution is sprayed between the second plurality of pairs of device electrodes 2 and 3 to form a second pair of device electrodes. An image display device comprising: electron source substrates 10 and 100 on which two surface conduction electron-emitting device groups are formed; and a face plate 76 that is disposed to face the electron source substrate and has a phosphor mounted thereon. And the second surface conduction type electron-emitting device group By performing display in the image display apparatus is driven by the input different signals information for each 10,100, it is obtained by a distinguishable the image display device for each image display device.

That is, this is an electron source substrate in which, in addition to the surface conduction type electron element group used for the original image display, the second surface conduction type electron emission element group is formed in a further outer region. FIG. 12 shows an example thereof. In this example, the second surface conduction electron-emitting device group is formed in the region Ya.

In the present invention, the second surface conduction electron-emitting device group is formed as described above, and such an electron source substrate and a face plate which is disposed to face the electron source substrate and on which a phosphor is mounted are provided. And an image display device having the following. By inputting and driving signal information to the second group of surface conduction electron-emitting devices, an image can be displayed even in the region of the second group of surface conduction electron-emitting devices.

Therefore, the input of signal information to the second group of surface conduction electron-emitting devices is made different for each completed image display device, for example, a serial number is displayed for each image display device, or By changing the display color for each production lot, the image display devices after production can be easily distinguished. In particular, by displaying the serial number in the form of an image, it is extremely efficient without the need for engraving with a separate device later.

In the above description, an example in which the second surface conduction electron-emitting device group is provided separately from the original surface conduction electron-emitting device group has been described, but they are not particularly distinguished. Alternatively, a signal may be input to the surface-conduction electron-emitting device group to switch the display signal to the original display signal and to change the display color for each manufacturing lot or to display the serial number. Alternatively, a display for changing a display color for each production lot and a display of a serial number or the like may be performed at the same time as the original display without performing the switching.

[0119]

According to the present invention, an electron source substrate is formed by spraying a droplet of a solution containing a material for a conductive thin film to form a surface conduction electron-emitting device group using the conductive thin film. In the above, the pattern, manufacturing date, serial number ( (Serial number) can be formed, and the electron source substrate after manufacturing can be easily distinguished. In addition, by forming a pattern or the like that can be distinguished for each of a plurality of substrate groups, it is possible to distinguish for each lot to be manufactured. In particular, by spraying a droplet of the solution with the production number, it is possible to simultaneously perform the formation of the surface conduction type electron-emitting device group. Good. Further, when engraving is performed later by another device as in the conventional case, there is a problem of contamination or the like. A high-performance electron source substrate can be manufactured.

According to the second aspect of the present invention, in the electron source substrate in which a droplet of a solution containing the material of the conductive thin film is sprayed to form a surface conduction electron-emitting device group using the conductive thin film, Forming a plurality of pairs of device electrodes outside the region where the surface conduction electron-emitting device group is formed,
By spraying droplets of a solution containing a conductive thin film material between the device electrodes, a pattern for checking the performance of the surface conduction electron-emitting device was formed. It is possible to measure the resistance value between patterns for patterning, and it is possible to perform a performance check in this pattern part without checking the surface conduction electron-emitting device group, which is extremely efficient. good. Also, before the image display device is finally completed, the performance can be checked as an electron source substrate in this pattern portion, so that the efficiency is very high.

According to a third aspect of the present invention, there is provided a method for manufacturing an electron source substrate, wherein a droplet of a solution containing a material for a conductive thin film is sprayed to form a surface conduction electron-emitting device group using the conductive thin film. The droplet spray application area can be made wider than the area where the surface conduction electron-emitting device group is formed, so that a droplet of a solution containing the material of the conductive thin film is sprayed and applied to the surface by the conductive thin film. In addition to forming the conduction electron-emitting device group, the solution can be sprayed to the outside of the region where the surface conduction electron-emitting device group is formed.

Advantageous Effect According to Claim 6: Since the electron source substrate is manufactured efficiently and performance is efficiently checked during the manufacturing process, a high-performance and low-cost electron source substrate can be obtained. Is used for an image display device, so that a high-performance and low-cost image display device can be obtained.

According to a seventh aspect of the present invention, a surface conduction electron-emitting device group is formed by spraying a droplet of a solution containing a material of a conductive thin film between a plurality of pairs of device electrodes on a substrate. In the electron source substrate formed with, a second plurality of pairs of device electrodes different from the plurality of pairs of device electrodes are provided outside a region where the surface conduction electron-emitting device group is formed. By spraying a droplet of a conductive solution between each pair of device electrodes, a second conductive thin film is formed.
An electron source substrate on which the surface conduction electron-emitting device group of (1) is formed, the image display device comprising: the electron source substrate; and a face plate, which is disposed to face the electron source substrate and has a phosphor mounted thereon. And driving the second group of surface conduction electron-emitting devices by inputting different signal information for each electron source substrate, performing display on the image display device, and distinguishing the image display device for each image display device. Therefore, a pattern, a serial number, and the like that can be distinguished for each manufactured image display device can be displayed as an image, and the manufactured image display devices can be easily distinguished. In particular, by displaying the serial number in the form of an image, it is extremely efficient without the need for engraving with a separate device later.

[Brief description of the drawings]

FIG. 1 is a schematic view showing a configuration of a flat surface conduction electron-emitting device according to an embodiment of the present invention.

FIG. 2 is a schematic diagram for explaining a method of manufacturing the flat surface conduction electron-emitting device shown in FIG.

FIG. 3 is a configuration diagram illustrating an example of an apparatus for manufacturing an electron source substrate according to an embodiment of the present invention.

FIG. 4 is a view for explaining an example of a configuration of a droplet applying apparatus according to the apparatus for manufacturing an electron source substrate according to the present invention.

FIG. 5 is a schematic configuration diagram of a main part of an ejection head unit of the droplet applying apparatus of FIG. 4;

FIG. 6 is a schematic plan view for explaining an example in which the electron-emitting device section is formed by one droplet.

FIG. 7 is a schematic plan view showing an example of a dot pattern of a planar surface conduction electron-emitting device formed according to the present invention.

FIG. 8 is a schematic plan view showing another example of the dot pattern of the flat surface conduction electron-emitting device formed according to the present invention.

FIG. 9 is a diagram showing a configuration example of an ejection head used in a device for manufacturing a surface conduction electron-emitting device according to the present invention.

FIG. 10 is a schematic plan view for explaining an electron source substrate and a method of manufacturing the same according to the present invention, in which a spray application pattern by a solution is formed outside a region where a surface conduction electron-emitting device group is formed. It is a figure which shows the example formed.

FIG. 11 is a schematic plan view for explaining an electron source substrate and a method of manufacturing the same according to the present invention, wherein a pattern for performance check is provided outside a region where a group of surface conduction electron-emitting devices is formed. It is a figure showing the example which formed.

FIG. 12 is a schematic plan view for explaining an electron source substrate and a method of manufacturing the same according to the present invention, in which a second surface conduction type electron-emitting device is formed outside a region where a surface conduction electron-emitting device group is formed. FIG. 3 is a diagram illustrating an example in which an electron-emitting device group is formed.

FIG. 13 is a diagram showing an example of a voltage waveform in the energization forming process that can be used for manufacturing the surface conduction electron-emitting device according to the present invention.

FIG. 14 is a schematic diagram showing an example of a matrix-disposed electron source substrate to which the present invention can be applied.

FIG. 15 is a diagram illustrating an example of a basic configuration of a display panel of an image display device using a matrix arrangement type electron source substrate to which the present invention can be applied.

FIG. 16 is a schematic diagram illustrating a configuration example of a fluorescent film used in an image display device to which the present invention can be applied.

FIG. 17 is a block diagram illustrating an example of a driving circuit for performing display on an image display device according to an NTSC television signal.

FIG. 18 is a schematic view showing an example of a ladder-type arrangement type electron source substrate to which the present invention can be applied.

FIG. 19 is a diagram illustrating an example of a basic configuration of a display panel of an image display device using a ladder-type arrangement type electron source substrate to which the present invention can be applied.

FIG. 20 is a schematic view showing an example of a conventional electron-emitting device.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... board | substrate, 2, 3 ... element electrode, 4 ... conductive thin film, 5 ... electron emission part, 10 ... electron source board, 11 ... ejection head unit (ejection head), 12 ... carriage, 13 ... substrate holding stand, 14 ... substrate, 15 ... supply tube, 16 ... signal supply cable, 17 ... injection head control box, 1
8 X-direction scan motor of carriage 12, 19 Y-direction scan motor of carriage 12, 20 computer, 21 control box, 22 (22X1,
22Y1, 22X2, 22Y2): substrate positioning / holding means, 30: ejection head unit, 31: head alignment control mechanism, 32: detection optical system, 33: inkjet head, 34: head alignment fine movement mechanism, 35
... Control computer, 36 ... Image identification mechanism, 37 ... XY
Direction scanning mechanism, 38: position detection mechanism, 39: position correction control mechanism, 40: inkjet head drive / control mechanism,
41: optical axis, 42: droplet, 43: droplet landing position, 44:
Dots by the ejected droplets, 50: ejection head (inkjet head), 51: heating element substrate, 52: lid substrate,
53: silicon substrate, 54: individual electrode, 55: common electrode, 56: heating element, 57: solution inlet, 58: nozzle,
59: groove, 60: concave area, 61: X-direction wiring, 62
... Y-direction wiring, 63 ... Surface conduction electron-emitting device, 64 ...
Connection: 71: rear plate, 72: support frame, 73: glass substrate, 74: fluorescent film, 75: metal back, 76: face plate, 78: envelope, 81: black conductive material, 8
2: phosphor, 91: image display panel, 92: scanning circuit, 93: control circuit, 94: shift register, 95: line memory, 96: synchronization signal separation circuit, 97: modulation signal generator, 98: common wiring , 100... Electron source substrate, 101
... grid electrode, 102 ... opening, 103, 104 ... terminal outside the container, Vx and Va ... DC voltage source.

Claims (7)

[Claims] 1. A plurality of pairs of device electrodes are arranged on a substrate, and a droplet of a solution containing a material for a conductive thin film is sprayed between each pair of device electrodes to apply surface conductive electrons by the conductive thin film. A method for manufacturing an electron source substrate forming an emission element group,
By spraying droplets of the solution onto the outside of the region where the surface conduction electron-emitting device group is formed, the electron source substrate manufactured by the method for manufacturing an electron source substrate can be used for each substrate or a plurality of substrate groups. A method for manufacturing an electron source substrate, comprising forming a pattern that can be distinguished for each electron beam. 2. A plurality of pairs of device electrodes are arranged on a substrate, and a droplet of a solution containing a material of a conductive thin film is sprayed between each pair of the device electrodes to apply surface conductive electrons by the conductive thin film. A method for manufacturing an electron source substrate forming an emission element group,
One or more pairs of device electrodes are arranged outside the region where the surface conduction electron-emitting device group is formed, and a solution of a solution containing the material of the conductive thin film between each pair of device electrodes. A method for manufacturing an electron source substrate, comprising forming another surface conduction type electron-emitting device or an electron emission device group for checking the performance of the surface conduction type electron-emitting device group by spraying a droplet. . 3. An electron source substrate on which a surface conduction electron-emitting device group having a plurality of pairs of device electrodes arranged on a substrate and a conductive thin film formed by spraying between each pair of device electrodes is formed. The electron source substrate, wherein the area to which the jet is applied is wider than the area where the surface conduction electron-emitting device group is formed. 4. An electron source substrate on which a surface conduction electron-emitting device group having a plurality of pairs of device electrodes disposed on a substrate and a conductive thin film formed by spraying between each pair of device electrodes is formed. The electron source substrate can be distinguished for each substrate or for each of a plurality of substrate groups by a droplet of a solution sprayed out of the region where the surface conduction electron-emitting device group is formed. An electron source substrate having a pattern formed thereon. 5. An electron source substrate on which a surface conduction electron-emitting device group having a plurality of pairs of device electrodes arranged on a substrate and a conductive thin film formed by spraying between each pair of device electrodes is formed. Wherein one or more pairs of device electrodes are arranged outside a region where the surface conduction electron-emitting device group is formed, and another surface of the conductive thin film is provided between each pair of device electrodes. An electron source substrate, wherein a conduction type electron emission element or an electron emission element group is formed for checking the performance of the surface conduction type electron emission element group. 6. An image display, comprising: the electron source substrate according to claim 3; and a face plate disposed opposite to the electron source substrate and having a phosphor mounted thereon. apparatus. 7. A surface conduction electron-emitting device group having a plurality of pairs of device electrodes arranged on a substrate and a conductive thin film formed by spraying a conductive solution between each pair of device electrodes. Is formed, outside the region where the surface conduction electron-emitting device group is formed,
A second plurality of pairs of device electrodes different from the plurality of pairs of device electrodes are arranged, and a droplet of a conductive solution is sprayed between the second plurality of pairs of device electrodes to form a conductive thin film. An electron source substrate on which two surface conduction electron-emitting devices are formed;
And a face plate on which a phosphor is mounted, facing the electron source substrate, wherein the second surface conduction electron-emitting device group transmits different signal information for each electron source substrate. An image display device, wherein the image display device can be distinguished for each image display device by inputting, driving, and displaying on the image display device.