JP3461868B2 - 温度センサを較正する無線装置及び方法 - Google Patents

温度センサを較正する無線装置及び方法

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Publication number
JP3461868B2
JP3461868B2 JP19856193A JP19856193A JP3461868B2 JP 3461868 B2 JP3461868 B2 JP 3461868B2 JP 19856193 A JP19856193 A JP 19856193A JP 19856193 A JP19856193 A JP 19856193A JP 3461868 B2 JP3461868 B2 JP 3461868B2
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JP
Japan
Prior art keywords
temperature
calibration
wafer
temperature sensor
melting point
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP19856193A
Other languages
English (en)
Japanese (ja)
Other versions
JPH06224206A (ja
Inventor
エム．モスレヒ メールダッド
ナジム ハビブ
エイ．ベロ リノ
Original Assignee
テキサス インスツルメンツ インコーポレイテツド
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Application filed by テキサス インスツルメンツ インコーポレイテツド filed Critical テキサス インスツルメンツ インコーポレイテツド
Publication of JPH06224206A publication Critical patent/JPH06224206A/ja
Application granted granted Critical
Publication of JP3461868B2 publication Critical patent/JP3461868B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K15/00—Testing or calibrating of thermometers
    • G01K15/005—Calibration
    • H10P74/00—
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/52—Radiation pyrometry, e.g. infrared or optical thermometry using comparison with reference sources, e.g. disappearing-filament pyrometer
    • G01J5/53—Reference sources, e.g. standard lamps; Black bodies
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/80—Calibration

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Measuring Temperature Or Quantity Of Heat (AREA)
  • Radiation Pyrometers (AREA)
JP19856193A 1992-08-11 1993-08-10 温度センサを較正する無線装置及び方法 Expired - Fee Related JP3461868B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/928,564 US5265957A (en) 1992-08-11 1992-08-11 Wireless temperature calibration device and method
US928564 1992-08-11

Publications (2)

Publication Number Publication Date
JPH06224206A JPH06224206A (ja) 1994-08-12
JP3461868B2 true JP3461868B2 (ja) 2003-10-27

Family

ID=25456433

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19856193A Expired - Fee Related JP3461868B2 (ja) 1992-08-11 1993-08-10 温度センサを較正する無線装置及び方法

Country Status (6)

Country Link
US (2) US5265957A (OSRAM)
EP (1) EP0583007B1 (OSRAM)
JP (1) JP3461868B2 (OSRAM)
KR (1) KR100276412B1 (OSRAM)
DE (1) DE69314876T2 (OSRAM)
TW (1) TW287230B (OSRAM)

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US6536944B1 (en) * 1996-10-09 2003-03-25 Symyx Technologies, Inc. Parallel screen for rapid thermal characterization of materials
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US6169271B1 (en) 1998-07-13 2001-01-02 Mattson Technology, Inc. Model based method for wafer temperature control in a thermal processing system for semiconductor manufacturing
DE19934299C2 (de) * 1998-07-28 2003-04-03 Steag Ast Elektronik Gmbh Verfahren und Vorrichtung zum Kalibrieren von emissivitätsunabhängigen Temperaturmessungen
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JP4056148B2 (ja) * 1998-10-09 2008-03-05 東京エレクトロン株式会社 放射温度計を用いた温度測定方法
US6200023B1 (en) * 1999-03-15 2001-03-13 Steag Rtp Systems, Inc. Method for determining the temperature in a thermal processing chamber
US6293696B1 (en) * 1999-05-03 2001-09-25 Steag Rtp Systems, Inc. System and process for calibrating pyrometers in thermal processing chambers
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US7234862B2 (en) * 2000-10-13 2007-06-26 Tokyo Electron Limited Apparatus for measuring temperatures of a wafer using specular reflection spectroscopy
US6666577B2 (en) * 2000-11-02 2003-12-23 Matsushita Electric Industrial Co., Ltd. Method for predicting temperature, test wafer for use in temperature prediction, and method for evaluating lamp heating system
US6517235B2 (en) 2001-05-31 2003-02-11 Chartered Semiconductor Manufacturing Ltd. Using refractory metal silicidation phase transition temperature points to control and/or calibrate RTP low temperature operation
US20050233770A1 (en) * 2002-02-06 2005-10-20 Ramsey Craig C Wireless substrate-like sensor
US20050224902A1 (en) * 2002-02-06 2005-10-13 Ramsey Craig C Wireless substrate-like sensor
US7289230B2 (en) * 2002-02-06 2007-10-30 Cyberoptics Semiconductors, Inc. Wireless substrate-like sensor
DE10325602B3 (de) * 2003-06-05 2004-09-09 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur temperaturgeregelten Prozessierung von Substraten
FR2874285B1 (fr) * 2004-08-13 2006-10-13 Commissariat Energie Atomique Procede de realisation d'empilements d'ilots de materiau semi-conducteur encapsules dans un autre materiau semi-conducteur
US7406397B2 (en) * 2004-09-02 2008-07-29 International Business Machines Corporation Self heating monitor for SiGe and SOI CMOS devices
DE102004051409B4 (de) * 2004-10-21 2010-01-07 Ivoclar Vivadent Ag Brennofen
US8547521B1 (en) * 2004-12-01 2013-10-01 Advanced Micro Devices, Inc. Systems and methods that control liquid temperature in immersion lithography to maintain temperature gradient to reduce turbulence
US7275861B2 (en) * 2005-01-31 2007-10-02 Veeco Instruments Inc. Calibration wafer and method of calibrating in situ temperatures
US7380982B2 (en) * 2005-04-01 2008-06-03 Lam Research Corporation Accurate temperature measurement for semiconductor applications
DE102005049477A1 (de) * 2005-10-13 2007-04-19 Freiberger Compound Materials Gmbh Verfahren und Vorrichtung zur Kristallzüchtung mittels kombinierter Heizerregelung
US7893697B2 (en) 2006-02-21 2011-02-22 Cyberoptics Semiconductor, Inc. Capacitive distance sensing in semiconductor processing tools
CN101410690B (zh) * 2006-02-21 2011-11-23 赛博光学半导体公司 半导体加工工具中的电容性距离感测
US8823933B2 (en) * 2006-09-29 2014-09-02 Cyberoptics Corporation Substrate-like particle sensor
US7778793B2 (en) * 2007-03-12 2010-08-17 Cyberoptics Semiconductor, Inc. Wireless sensor for semiconductor processing systems
JP4991390B2 (ja) * 2007-05-21 2012-08-01 株式会社日立ハイテクノロジーズ マイクロサンプル加熱用試料台
US8047706B2 (en) * 2007-12-07 2011-11-01 Asm America, Inc. Calibration of temperature control system for semiconductor processing chamber
US8523427B2 (en) * 2008-02-27 2013-09-03 Analog Devices, Inc. Sensor device with improved sensitivity to temperature variation in a semiconductor substrate
US9109961B2 (en) * 2010-08-31 2015-08-18 Canon U.S. Life Sciences, Inc. Compound calibrator for thermal sensors
US8749629B2 (en) 2011-02-09 2014-06-10 Siemens Energy, Inc. Apparatus and method for temperature mapping a turbine component in a high temperature combustion environment
DE102015106805A1 (de) 2015-04-30 2016-11-03 Anton Paar Optotec Gmbh Temperaturkalibration für Messgerät
KR102616595B1 (ko) * 2022-11-02 2023-12-28 한국표준과학연구원 서모커플 웨이퍼 교정 시스템 및 이를 이용한 교정방법
WO2024130209A1 (en) * 2022-12-16 2024-06-20 Lam Research Corporation Reference wafer for high fidelity in-situ temperature metrology calibration
CN117109776B (zh) * 2023-10-24 2024-01-19 成都明夷电子科技有限公司 一种光模块单点温度校准方法

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Title
Ｒｅｖ．Ｓｃｉ．Ｉｎｓｔｒｕｍ．，１９９２年 １月，６３（１），ｐｐ．１８８−１９０

Also Published As

Publication number Publication date
US5326170A (en) 1994-07-05
US5265957A (en) 1993-11-30
DE69314876D1 (de) 1997-12-04
DE69314876T2 (de) 1998-03-12
EP0583007A1 (en) 1994-02-16
KR100276412B1 (ko) 2001-01-15
EP0583007B1 (en) 1997-10-29
TW287230B (OSRAM) 1996-10-01
JPH06224206A (ja) 1994-08-12
KR940006239A (ko) 1994-03-23

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