JP3456849B2 - Signal transmission circuit, signal reception circuit and transmission / reception circuit, signal transmission method, signal reception method and signal transmission / reception method, and semiconductor integrated circuit and control method therefor - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to improvement of a semiconductor integrated circuit which operates in synchronization with a clock signal, for example, a large-scale integrated circuit such as a microprocessor or a signal processor, and more particularly, to drive a signal such as the clock signal. The present invention relates to a circuit and method for low power consumption.

[0002]

2. Description of the Related Art Conventionally, in a clock signal transmission technique in a semiconductor integrated circuit, the amplitude of the clock signal is such that the receiver circuit receiving the clock signal operates statically, that is, the output depends on the potential change of the clock signal. Due to the necessity of changing, the full amplitude of the power supply voltage level, which is the potential difference between the power supply potential and the ground potential, was obtained.

In a large-scale chip, a clock skew due to a wiring delay (R / C delay) is used so that a clock signal, which is a synchronizing signal, changes at the same timing from end to end of the chip. The following measures were taken to minimize it.

1) The signal wiring width is widened so that the influence of the clock signal wiring resistance is reduced. 2) Disperse large drivers in various places on the chip.

[0005]

However, in the above-mentioned prior art, since the amplitude voltage of the clock signal is the full amplitude of the power supply voltage level, there is a drawback that the power consumption required for driving the clock signal increases.

Further, when the signal wiring width is widened as in the above measure 1), the wiring resistance can be reduced, but the wiring capacitance becomes large, so that a driver with a large size is required. Therefore, the measures 1) and In both of the measures 2), the power for driving the driver is increased, so that the power consumption required for driving the clock signal is further increased.

The present invention focuses on the above-mentioned drawbacks,
The purpose is to reduce the power consumption required to drive the clock signal.

In order to achieve the above object, the amplitude voltage of the clock signal may be set to a very small voltage. In this case, however, the receiver circuit having the conventional structure cannot operate statically.

The present invention provides a receiver circuit which can be operated statically in conjunction with a potential change of a clock signal having a minute amplitude even when transmitting a clock signal having a minute amplitude voltage, and the receiver circuit is provided with the receiver circuit. The present invention provides a suitable clock signal driver circuit, and further provides a semiconductor integrated circuit adopting the clock signal receiving configuration of the receiver circuit and a control method thereof.

Therefore, according to the present invention, the main points are roughly described. If a clock signal is differentially transmitted and the differential signal is received by a gate electrode and a source electrode of a transistor, when the potential of the differential clock signal changes. Since the gate potential and the source potential of the transistor transit in opposite directions to each other and the transistor can be operated with a potential difference that is twice the potential difference of the differential clock signal, the advantage that static operation can be secured is utilized.

[0011]

In order to achieve the above object, a signal transmission circuit according to a first aspect of the present invention is a signal transmission circuit for transmitting a signal to a signal receiving circuit, wherein the signal is transferred in a potential transition direction. And a differential signal generation unit that expresses a differential signal composed of two signals in opposite directions, and uses one potential of the differential signals as the potential of the power supply of the signal receiving circuit, And a wiring pair for differentially transmitting the differential signal generated by the generation unit.

A signal receiving circuit according to a second aspect of the present invention is a signal receiving circuit composed of transistors, wherein the signal receiving circuit is a differential signal composed of two signals whose potential transition directions are opposite to each other. When a signal is received, the potentials of at least two electrodes of the source electrode, the gate electrode and the substrate electrode in the transistor change in synchronization with the change of the differential signal.

The signal transmitting / receiving circuit according to the invention of claim 3 is
A differential signal in which a signal to be transmitted is represented by a differential signal composed of two signals whose potential transition directions are opposite to each other, and one potential of the differential signals is the potential of the power supply of the signal receiving circuit. The signal receiving circuit includes a generation unit, a wiring pair through which the differential signal generated by the differential signal generation unit is differentially transmitted, and a signal receiving circuit configured by a transistor, and the signal receiving circuit is transmitted to the wiring pair. While receiving the generated differential signal, the potentials of at least two electrodes of the source electrode, the gate electrode, and the substrate electrode in the transistor change in synchronization with the change of the differential signal.

According to a fourth aspect of the invention, in the signal receiving circuit or the signal transmitting / receiving circuit according to the second or third aspect, when one of the differential signals rises in potential and the other of the differential signals falls in potential. When the transistor is turned on and the other of the differential signals rises in potential and the other of the differential signals falls in potential, the transistor is turned off.
It is characterized by performing F.

According to a fifth aspect of the present invention, in the signal transmission circuit or the signal transmission / reception circuit according to the first or third aspect, the signal to be transmitted is a clock signal.

According to a sixth aspect of the present invention, in the signal transmission circuit or the signal transmission / reception circuit according to the first or third aspect, the differential signal generation section inputs a signal having a first amplitude voltage and outputs this signal. A second amplitude smaller than the first amplitude voltage
It is characterized in that it is converted into a differential signal of the amplitude voltage of.

According to a seventh aspect of the present invention, in the signal transmission circuit or the signal transmission / reception circuit according to the sixth aspect, the differential signal generating section includes an inverter that inverts the signal having the first amplitude voltage, and the signal. And a first and a second push-pull circuit that receives an inverted signal from the inverter and is connected to two output terminals that form a pair, and the first push-pull circuit has a predetermined potential. The output terminal is connected to the first power supply terminal, and one of the output terminals is connected to the first power supply terminal when the signal is at "H" level, and the inverted signal from the inverter is at "H" level. The other of the output terminals is connected to the first power supply terminal, and the second
Of the push-pull circuit is connected to a second power supply terminal of another potential different from the predetermined potential by the second amplitude voltage, and the other of the output terminals is connected to the other of the output terminals when the signal is at "H" level. One of the output terminals is connected to the second power supply terminal, and one of the output terminals is connected to the second power supply terminal when the inverted signal from the inverter is at "H" level.

According to an eighth aspect of the present invention, in the signal receiving circuit or the signal transmitting / receiving circuit according to the second or third aspect, the signal receiving circuit is a flip-flop circuit formed by flip-flop connecting two inverter circuits. At least two or more of a source electrode pair, a gate electrode pair, and a substrate electrode pair in one transistor pair between the two inverter circuits forming the flip-flop circuit, in synchronization with a change in the received differential signal. The electric potential of the electrode pair of is changed.

According to a ninth aspect of the present invention, in the signal receiving circuit or the signal transmitting / receiving circuit according to the eighth aspect, the differential signal is received via a differential signal wiring pair composed of two signal lines, Each of the flip-flop circuits has an NMO.
The first and second CMOS type inverter circuits having an S type transistor and a PMOS type transistor are flip-flop connected, and the source electrodes of the NMOS type transistor pair are provided between the first and second CMOS type inverter circuits. The pair of differential signal wirings are independently connected to each pair.

According to a tenth aspect of the present invention, in the signal receiving circuit or the signal transmitting / receiving circuit according to the ninth aspect, in the first CMOS type inverter circuit, drain electrodes of the NMOS type transistor and the PMOS type transistor are commonly connected. The source electrode of the NMOS transistor is connected to one of the differential signal line pairs,
The source electrode of the type transistor is connected to the power supply of the signal receiving circuit via the first switch circuit, and the first switch circuit is connected to the gate electrode of the other of the differential signal wiring pair and the current driving capability. Is controlled by the second CMOS
In the inverter circuit, the drain electrodes of the NMOS transistor and the PMOS transistor are commonly connected, the source electrode of the NMOS transistor is connected to the other of the differential signal line pair, and the source electrode of the PMOS transistor is It is connected to the power supply of the signal receiving circuit via a second switch circuit, and the second switch circuit has its gate electrode connected to one of the differential signal wiring pairs to control the current drive capability. Is characterized by.

According to an eleventh aspect of the present invention, in the signal receiving circuit or the signal transmitting / receiving circuit according to the ninth aspect, in the first CMOS type inverter circuit, a source electrode of any one of the transistors is a differential signal wiring pair. The gate electrode of the transistor is connected to one side, and the gate electrode of the transistor is connected to the other side of the differential signal line pair via a capacitance, and the second CMOS is connected.
Type inverter circuit, the source electrode of one of the transistors is connected to the other of the differential signal wiring pair, and the gate electrode of the transistor is connected to one of the differential signal wiring pair via another capacitance. Is characterized by.

According to a twelfth aspect of the present invention, in the signal receiving circuit or the signal transmitting / receiving circuit according to the ninth aspect, there is provided a switch pair composed of first and second switch circuits each of which is formed of a transistor. The first switch circuit is arranged between one of the differential signal wiring pair and a ground line, and its gate electrode is connected to the source electrode of the PMOS transistor of the second CMOS inverter circuit, The second switch circuit is arranged between the other of the differential signal wiring pair and a ground line, and its gate electrode is connected to the source electrode of the PMOS transistor of the first CMOS inverter circuit. And

According to a thirteenth aspect of the present invention, in the signal receiving circuit or the signal transmitting / receiving circuit according to the ninth aspect, separately,
The NMOS transistor pair includes a source electrode pair commonly connected to a ground line, a gate electrode pair and a drain electrode pair cross-coupled, and the gate electrode pair and the drain electrode pair. Are respectively connected to the differential signal wiring pairs.

According to a fourteenth aspect of the present invention, in the signal receiving circuit or the signal transmitting / receiving circuit according to the second or third aspect,
The signal receiving circuit includes a flip-flop circuit,
The flip-flop circuit is configured by flip-flop connecting the first and second NMOS type inverter circuits,
Each of the NMOS type inverter circuits has an NMOS type load transistor and another NMOS type transistor,
The load transistor of each of the NMOS type inverter circuits has a diode connecting portion connecting the gate electrode and the drain electrode thereof, and between the first and second NMOS type inverter circuits, another NMOS type transistor pair is connected. The source electrode pair is connected to the differential signal wiring pair.

The invention according to claim 15 is the same as that according to claim 14.
A signal receiving circuit or a signal transmitting / receiving circuit as described above,
In the NMOS type inverter circuit, the source electrode of the NMOS type load transistor and the drain electrode of the other NMOS type transistor are connected, and the source electrode of the other NMOS type transistor is connected to one of the differential signal wiring pairs, The diode connection portion of the load transistor is connected to the power supply of the signal receiving circuit via the first switch circuit, and the first switch circuit has its gate electrode connected to the other of the differential signal wiring pair to generate a current. The driving capability is controlled, and in the second NMOS type inverter circuit, NM
Source electrode of OS type load transistor and other NMOS
The drain electrode of the MOS transistor is connected, the source electrode of the other NMOS transistor is connected to the other of the differential signal wiring pair, and the diode connection portion of the load transistor is connected to the signal via the second switch circuit. The second switch circuit is connected to the power supply of the receiving circuit, and one of the differential signal wiring pairs is connected to the gate electrode of the second switch circuit to control the current driving capability.

The signal transmission method according to the invention of claim 16 is:
The signal to be transmitted is transmitted as a differential signal composed of two signals whose potential transition directions are opposite to each other and one of the two signals is the potential of the power supply of the signal receiving circuit. And

The invention according to claim 17 is the same as that according to claim 16.
In the signal transmission method described above, the differential signal is a differential signal of a minute amplitude voltage smaller than a potential difference between a power supply potential of the signal receiving circuit and a ground potential.

The invention of claim 18 is the same as that of claim 16
In the signal transmission method described above, the signal to be transmitted is a clock signal.

The invention according to claim 19 is the same as claim 16
In the signal transmission method described above, a signal having a first amplitude voltage is input, and the input signal has a second amplitude that is smaller than the first amplitude voltage and that is based on a potential of a power supply of the signal receiving circuit. It is characterized in that it is converted into a voltage differential signal and this differential signal is transmitted.

The signal receiving method according to the invention of claim 20 is:
It is characterized in that any two electrodes of the source electrode, the gate electrode, and the substrate electrode of the transistor receive a differential signal composed of two signals whose potential transition directions are opposite to each other.

The invention according to claim 21 is the same as claim 20.
In the signal receiving method described above, two of the source electrode pair, the gate electrode pair, and the substrate electrode pair of the transistor pair between the two inverter circuits forming the flip-flop circuit are synchronized with the change of the differential signal. The above-mentioned differential signal is received by changing the potentials of the above electrodes.

According to the 22nd aspect of the present invention, there is provided a signal transmitting / receiving method, wherein a signal to be transmitted comprises two signals whose potential transition directions are opposite to each other, and one of the two signals has a potential of the signal receiving circuit. Any one of a source electrode, a gate electrode, and a substrate electrode of a transistor, which is transmitted as a differential signal which is a potential of a power source, and transmits the transmitted differential signal.
It is characterized by receiving with one electrode.

The signal transmission circuit according to the twenty-third aspect of the present invention is
In the signal transmission circuit that transmits the signal to the signal reception circuit,
A first signal in which the signal is represented by a differential signal composed of two signals whose potential transition directions are opposite to each other, and one of the differential signals is a potential of a power supply of the signal receiving circuit. A differential signal generation section, a second differential signal generation section that expresses the signal with the differential signal, and uses one of the differential signals as a ground potential, and the first and second differential signal generation sections. And a pair of wirings for differentially transmitting both differential signals generated by the differential signal generating unit.

The invention according to claim 24 is the same as claim 23.
In the signal transmission circuit as described above, the first and second differential signal generators receive a signal having a first amplitude voltage,
The first differential signal generation unit generates a differential signal having a second amplitude voltage smaller than the first amplitude voltage, and outputs the second differential signal.
The differential signal generator of 1 generates a differential signal having a third amplitude voltage smaller than the first amplitude voltage.

The invention of claim 25 is the same as that of claim 24.
In the signal transmission circuit described above, the first differential signal generation unit includes a push-pull circuit including a PMOS transistor and connected to two power supplies having a potential difference equal to the second amplitude voltage, and the second differential signal generation unit. The differential signal generator of
A push-pull circuit including an OS transistor and connected to two power supplies having a potential difference equal to the third amplitude voltage is provided.

The invention according to claim 26 is the same as claim 23.
In the signal transmission circuit described above, the first and second differential signal generation units are connected in series between a power supply and a ground line, and the first differential signal generation unit and the second differential signal generation unit. A resistor is arranged between the parts.

The invention of claim 27 is the same as that of claim 23.
In the signal transmission circuit described above, the first and second differential signal generation units are connected in series between a power supply and a ground line, and the first differential signal generation unit and the second differential signal generation unit. And a third differential signal generation unit having the same configuration as the first or second differential signal generation unit, and the third differential signal generation unit includes a differential signal It is characterized in that a capacitance smaller than the stray capacitance of the wiring for transmitting is connected.

The signal receiving circuit according to the twenty-eighth aspect of the present invention is
A first differential signal of a small amplitude voltage based on a voltage near the potential of the predetermined power source of a predetermined power source and a ground power source of the signal receiving circuit, and a small amplitude voltage based on a voltage near the potential of the ground power source. The second differential signal as the only input, and statically interlocked with the electrical change of the first and second differential signals, and is higher than the amplitude voltage of the first and second differential signals. It is characterized by generating a large third amplitude voltage.

The invention according to claim 29 is the same as claim 28.
In the signal receiving circuit described above, the signal receiving circuit includes a flip-flop circuit, and the flip-flop circuit is
The first and second CMOS-type inverter circuits are formed by flip-flop connection of the first and second CMOS-type inverter circuits, and the first and second CMOS-type inverter circuits each include an NMOS-type transistor and a PMOS-type transistor in which drain electrodes are commonly connected. One of the first and second differential signals is input to the source electrode pair of the NMOS transistor of each of the first and second CMOS inverter circuits, and the first and second differential signals are input. The other of the first and second differential signals is input to the source electrode pair of the PMOS transistor of the CMOS inverter circuit.

The invention according to claim 30 is the above-mentioned claim 29.
In the signal receiving circuit described, the first and second CMOS
The second differential signal is input to the source electrode pair of the NMOS type transistor of the MOS type inverter circuit, and the first difference is input to the source electrode pair of the PMOS type transistors of the first and second CMOS type inverter circuits. It is characterized in that a motion signal is inputted.

The invention of claim 31 is the same as that of claim 29.
In the signal receiving circuit described above, the first and second differential signals are input via the first and second differential signal wiring pairs, respectively, and the respective transistors between the first and second CMOS inverter circuits are provided. The gate electrode pair of each pair is connected to one of the first and second differential signal wiring pairs via a capacitor, and the connection relationship between the gate electrode pair of each transistor pair and the differential signal wiring pair. Are respectively cross-coupled via the capacitors.

The invention according to claim 32 is the same as claim 28.
In the signal receiving circuit described above, the signal receiving circuit is formed of a flip-flop circuit, and the flip-flop circuit is formed by flip-flop connecting first and second NMOS type inverter circuits, and the first and second NMOS are provided.
Type inverter circuits each include an NMOS type load transistor and another NMOS type transistor, and each load transistor has a diode connection part in which its gate electrode and drain electrode are commonly connected, and each of the other N
The drain electrode of the MOS type transistor is connected to the source electrode of the load transistor of its own inverter circuit, and the source electrode pair of the other NMOS type transistor pair between the first and second NMOS type inverter circuits is A second differential signal is input, and the first and second N
The first differential signal is input to the drain electrode pair of the load transistor pair between the MOS inverter circuits.

The invention of claim 33 is the same as that of claim 14
Alternatively, in the signal receiving circuit described in 29, between the inverter circuits forming the flip-flop circuit, the substrate electrode pair of the transistor pair whose source electrode pair is connected to the differential signal wiring pair is the differential signal wiring pair. It is characterized by being cross-coupled.

The invention according to claim 34 is the same as claim 14 described above.
30. The signal receiving circuit according to 29, wherein the flip-flop circuit is formed on the surface of a chip having a plurality of transistors formed on the surface thereof, and the load transistor of the inverter circuit constituting the flip-flop circuit has a threshold value thereof. It is characterized in that the voltage is set to a voltage value smaller than threshold voltages of other transistors forming the flip-flop circuit and a plurality of other transistors formed on the chip surface.

The invention as set forth in claim 35, is based on claim 29.
In the signal receiving circuit described above, the signal receiving circuit includes first and second flip-flop circuits and an auxiliary receiving circuit having four sets of inverter circuits, and the first and second flip-flop circuits are respectively provided. Two diode load type inverter circuits are flip-flop connected, and one of the complementary output potentials is the power supply potential or the ground potential, and the other does not reach the original ground potential or the power supply potential. The receiving circuit receives complementary outputs from the first and second flip-flop circuits, and outputs complementary outputs of the power supply potential and the ground potential based on the four outputs.

The invention described in Item 36 is the above Item 35.
In the signal receiving circuit described above, the first flip-flop circuit is formed by flip-flop connecting first and second NMOS type inverter circuits, and each of the first and second NMOS type inverter circuits is an NMOS. Type load transistor and another NMOS type transistor, the load transistor has a diode connection part in which its gate electrode and drain electrode are commonly connected, and the other NMOS type transistor has its drain electrode The first electrode connected to the source electrode of the load transistor;
And between the second NMOS type inverter circuits,
The second source electrode pair of the other NMOS type transistor pair has a second
While the first differential signal is input to the drain electrode pair of the load transistor pair, the second differential signal of
Flip-flop circuit is formed by flip-flop-connecting first and second PMOS type inverter circuits, and each of the first and second PMOS type inverter circuits is P
The load transistor includes a MOS-type load transistor and another PMOS-type transistor, the load transistor has a diode connection part in which its gate electrode and drain electrode are commonly connected, and the other PMOS-type transistor has its drain electrode. Is connected to the source electrode of the load transistor, and the first differential signal is input to the source electrode pair of another PMOS type transistor pair between the first and second PMOS type inverter circuits. The second differential signal is input to the drain electrode pair of the load transistor pair.

The invention described in Item 37 is the above Item 35.
37. The signal receiving circuit according to claim 36, wherein the four inverter circuits in the auxiliary receiving circuit are four CMOs.
S-type inverter circuits, wherein the two sets of CMOS-type inverter circuits have their outputs commonly connected and supply one of the first differential signal and one of the second differential signals, respectively. And one of the complementary outputs of the first flip-flop circuit and one of the complementary outputs of the second flip-flop circuit are input, and the other two sets of CMOS type inverter circuits have their respective outputs. They are commonly connected, and the other of the first differential signal and the other of the second differential signals are used as a power supply and a ground power supply, respectively, and the other of the complementary outputs of the first flip-flop circuit and the The other of the complementary outputs of the two flip-flop circuits is input.

The invention of claim 38 is based on the invention of claim 35.
37. In the signal receiving circuit described in the paragraph 36, the four sets of inverter circuits in the auxiliary receiving circuit are each composed of an NMOS type inverter circuit and a PMOS type inverter circuit.
Set, other NMOS type inverter circuit and other PMOS
And a pair of NMOS-type and PMOS-type inverter circuits which are serially connected to each other in series, and the series connection point serves as an output terminal. One of the first and second differential signals is used as the power source and the ground power source of the series circuit, and further,
One of the outputs of the first and second flip-flop circuits is input to the gate electrode, and the other set of NMOS type and P
Both MOS type inverter circuits are configured as a series circuit connected in series with each other, and the series connection point is used as another output terminal, and the other of the first and second differential signals is a power source for the series circuit. And a ground power source, and the first and second power sources, respectively.
The other output of the flip-flop circuit is input to the gate electrode.

The invention according to claim 39 is the same as claim 16 above.
In the signal transmission method described above, a signal having a first amplitude voltage is input, and the input signal is a second signal which is smaller than the first amplitude voltage and which is based on a vicinity of a potential of a power supply of the signal receiving circuit. While converting to a differential signal of amplitude voltage,
The input signal is converted into a differential signal of a third amplitude voltage which is smaller than the first amplitude voltage and which is based on the vicinity of the ground potential, and both differential signals of the second and third amplitude voltages are converted. Is transmitted.

The signal receiving method of the invention as defined in claim 40 is:
A first differential signal of a small amplitude voltage based on a voltage near the potential of the predetermined power source of a predetermined power source and a ground power source of the signal receiving circuit, and a small amplitude voltage based on a voltage near the potential of the ground power source. The second differential signal as the only input, and statically interlocked with the electrical change of the first and second differential signals, and is higher than the amplitude voltage of the first and second differential signals. It is characterized by outputting a large third amplitude voltage.

According to a 41st aspect of the present invention, in a signal transmitting / receiving method, a signal having a first amplitude voltage is input, and the input signal is a differential signal composed of two signals whose potential transition directions are opposite to each other. The signal is a signal and has a second amplitude voltage smaller than the first amplitude voltage, and further converts one potential of the differential signals into a differential signal in the vicinity of the potential of the power supply of the signal receiving circuit. In addition, the input signal,
Converting the differential signal to a differential signal having a third amplitude voltage smaller than the first amplitude voltage and further having one potential of the differential signals in the vicinity of the ground potential, Transmitting both differential signals of the second and third amplitude voltages,
After that, the transmitted both differential signals are the only inputs,
It is characterized in that a signal having a fourth amplitude voltage larger than the second and third amplitude voltages of the both differential signals is output in static association with the electrical change of the both differential signals.

According to a 42nd aspect of the present invention, in the signal receiving circuit according to the 2nd or 3rd aspect, the signal receiving circuit comprises an inverter circuit having a transistor, and the inverter circuit comprises a source electrode of the transistor.
A differential signal is received by two electrodes of the gate electrode and the substrate electrode, and the two signals are synchronized with a change in the received differential signal.
It is characterized in that the electric potentials of the two electrodes change.

The invention according to claim 43 is the same as claim 42.
In the signal receiving circuit described above, the received differential signals are a first differential signal with a small amplitude voltage near the potential of the power supply of the signal receiving circuit and a second differential signal with a small amplitude voltage near the ground potential. The inverter circuit includes two transistors connected in series, and the one transistor receives the first differential signal on two electrodes of the source electrode, the gate electrode and the substrate electrode, and the other transistor The transistor has two of its source electrode, gate electrode and substrate electrode.
One of the electrodes receives the second differential signal.

The invention described in Item 44 is the same as Item 43.
In the signal receiving circuit described, the inverter circuit,
It has a series circuit in which both PMOS type and NMOS type transistors are connected in series, and comprises a CMOS type inverter circuit having the series connection point as an output terminal, and the first electrode is provided on the source electrode and the gate electrode of the PMOS type transistor. A differential signal is input, and the second differential signal is input to a source electrode and a gate electrode of the NMOS transistor.

The invention of claim 45 is the same as claim 43.
In the signal receiving circuit described above, the amplitude voltages of the first and second differential signals are each smaller than a half value of the voltage of the power supply of the signal receiving circuit.

The invention according to claim 46 is the same as claim 20.
In the signal receiving method described above, the differential signal is input to two or more electrodes of a source electrode, a gate electrode, and a substrate electrode of a transistor that forms an inverter circuit that is a signal receiving circuit, and the differential signal It is characterized in that the potentials of the two or more electrodes are changed in synchronization.

The invention according to claim 47 is the same as claim 20.
In the signal receiving method described above, the inverter circuit, which is the signal receiving circuit, includes two transistors, and outputs the first differential signal at a potential near the potential of the power source of the signal receiving circuit to one of the transistors of the inverter circuit. A second differential signal, which is input to two or more electrodes of the source electrode, the gate electrode, and the substrate electrode, and is at a potential near the ground potential,
It is characterized in that the information indicated by the first and second differential signals is received by inputting to two or more electrodes of a source electrode, a gate electrode and a substrate electrode of the other transistor of the inverter circuit.

The invention described in Item 48 is the above Item 47.
In the signal receiving method described above, the amplitude voltages of the first and second differential signals are each set to a minute amplitude voltage smaller than the potential difference between the power supply of the signal receiving circuit and the ground potential.

The invention according to claim 49 is the same as claim 47.
In the signal receiving method described above, after receiving the information indicated by the first and second differential signals, a detection signal of an amplitude voltage equal to the potential difference between the potential of the power supply of the signal receiving circuit and the ground potential according to this information. Is output.

A semiconductor integrated circuit according to a fiftieth aspect of the present invention is a semiconductor integrated circuit comprising switch means connected to a power supply line, and a circuit section which receives power supply from the power supply line via the switch means by the switch means. In the integrated circuit, when power is supplied from the power supply line to the circuit section by the switch means, and when the power supply is stopped,
It is characterized by further comprising potential control means for controlling the potential of the power supply line.

The invention according to claim 51 is the same as claim 50.
In the semiconductor integrated circuit according to, the power supply from the power supply line to the circuit unit is stopped by the switch means when the circuit unit changes from an activated state to a deactivated state,
The potential control means controls the potential of the power supply line so as to bring the switch means into a higher impedance state when the power supply to the circuit section is stopped by the switch means. .

The invention according to claim 52 is the same as claim 50.
51. In the semiconductor integrated circuit according to the item 51, the switch means comprises a transistor, the source electrode of the transistor is connected to the power supply line, the drain electrode thereof is connected to the circuit portion, and the gate electrode thereof is controlled by a gate voltage control. A control line for use is connected.

The invention of claim 53 is based on the invention of claim 52.
In the semiconductor integrated circuit described above, the potential control means is
When the power supply to the circuit unit is stopped by the switch means, the potential of the power supply line is controlled and the potential of the control line for controlling the gate voltage is set in a direction opposite to the changing direction of the potential of the power supply line. It is characterized by changing to.

The invention of claim 54 is the same as claim 52.
In the semiconductor integrated circuit described above, the potential control means is
When the power supply to the circuit section is stopped by the switch means, the potential of the power supply line is controlled and the potential of the control line for controlling the gate voltage is set to a direction in which the transistor is in a further high impedance state. It is characterized in that a transition is made and the potential at the transition reaching point is changed to a potential exceeding the potential of the source electrode of the transistor.

The invention according to claim 55 is the same as claim 50.
51. In the semiconductor integrated circuit according to item 51, the switch means is composed of a transistor, and the threshold voltage of the transistor is set to a voltage value equal to or lower than the threshold voltage of the transistor forming the circuit section. And

The invention according to claim 56 is the same as claim 50.
51. In the semiconductor integrated circuit according to item 51, the switch means is disposed between the power supply line having a predetermined potential and the circuit section, and between the power supply line having a ground potential and the circuit section. And a switch means.

A semiconductor integrated circuit control method according to a fifty-seventh aspect of the present invention is provided with a power supply line, a circuit section, and switch means connected to the power supply line and the circuit section. In the semiconductor integrated circuit adapted to supply power to the circuit section via the switch means, when power is supplied to the circuit section from the power supply line by the switch means, and when the power supply is stopped,
It is characterized in that the potential of the power supply line is changed.

The invention according to claim 58 is the same as claim 57.
In the method for controlling a semiconductor integrated circuit described above, when stopping the power supply to the circuit unit by the switch means,
It is characterized in that the potential of the power supply line is changed so as to bring the switch means into a higher impedance state.

The invention described in Item 59 is the above Item 58.
In the method for controlling a semiconductor integrated circuit described above, the switch means is constituted by a transistor, and when the power supply to the circuit portion is stopped by the switch means, the gate electrode of the transistor is set to a direction in which the potential of a power supply line changes. Is characterized by changing in the opposite direction.

In the semiconductor integrated circuit according to the 60th aspect of the present invention, a logic circuit or an arithmetic circuit is divided into a plurality of stages in the direction of the processing order and divided into a plurality of stages, and a switch circuit and a switch circuit are provided between the respective stages. In a semiconductor integrated circuit having a pipeline configuration in which a latch circuit is arranged, first and second clock differential wiring pairs for transmitting first and second differential clock signals lower than a power supply voltage, respectively, Are arranged in stages and receive the first and second differential clock signals of the first and second differential wiring pairs to generate another clock signal, and the other clock signal causes the corresponding clock of the corresponding stage to be generated. And a control means for controlling the switch circuit.

The invention described in Item 61 is the above Item 60.
In the semiconductor integrated circuit described above, the first differential clock signal is a differential signal of a small amplitude voltage based on a power supply potential, and the second differential clock signal is a small signal based on a ground potential. It is characterized in that it is a differential signal of an amplitude voltage.

The invention described in Item 62 is the above Item 61.
In the semiconductor integrated circuit described above, the control means is a PMOS transistor and an NM to which drain electrodes are connected.
The first differential clock signal is input to the source electrode and the gate electrode of the PMOS transistor, and the NMOS transistor is connected to the source electrode and the gate electrode of the NMOS transistor. The second differential clock signal is input, and both the PMOS type and NMOS type drain electrodes are used as output terminals, and the other clock signal is output from the output terminals.

The invention according to claim 63 is the same as claim 61.
In the semiconductor integrated circuit described above, the latch circuit at each stage is
The dynamic flip-flop circuit includes a flip-flop unit, a first switch unit disposed between the power supply line and the flip-flop unit, a ground line, and the flip-flop unit. And a second switch portion disposed between the first switch portion and the second switch portion.

The invention according to claim 64 is the same as claim 63.
In the semiconductor integrated circuit described above, the first switch unit is formed of a PMOS type transistor, and the second switch unit is formed of an NMOS type transistor.
A gate electrode and a source electrode of the MOS transistor are connected to the first clock differential wiring pair, a drain electrode thereof is connected to the flip-flop section, and a gate electrode and a source electrode of the NMOS transistor are connected to each other. It is characterized in that it is connected to the second clock differential wiring pair, and its drain electrode is connected to the flip-flop section.

A semiconductor integrated circuit control method according to a sixty-fifth aspect of the present invention has a plurality of stages obtained by dividing a logic circuit or an arithmetic circuit into a plurality of processing directions, and a switch circuit and a switch circuit are provided between the respective stages. In a pipelined semiconductor integrated circuit in which a latch circuit is arranged, a first differential clock signal based on a power supply potential and a second differential clock signal based on a ground potential are input to input the power supply. A clock signal having an electric potential as an amplitude voltage is generated, and the switch circuit of each stage is controlled based on the generated clock signal.

The invention described in Item 66 is the above Item 65.
In the method for controlling a semiconductor integrated circuit described above, the power supply to the latch circuit is cut off in the first half cycle of the generated clock signal, and data is taken into the latch circuit via the switch circuit, and the second half cycle of the clock signal. In (1), the switch circuit is closed to prevent the next data from being taken into the latch circuit, and power is supplied to the latch circuit to output the taken data.

A semiconductor integrated circuit according to a sixty-seventh aspect of the present invention is an inverter circuit for inputting data, inverting the data and outputting the data, and a first switch circuit arranged between the inverter circuit and a power supply line. And a second switch circuit arranged between the inverter circuit and a ground line, the semiconductor integrated circuit comprising a clocked inverter circuit, one of which also serves as a power supply line and whose potential transition direction is The first switch circuit has a wiring pair of a first differential clock signal composed of two signals in opposite directions and a wiring pair of a second differential clock signal whose other also serves as a ground line. A second switch circuit connected to the first differential clock signal wiring line pair and controlled by the first differential clock signal; and a second switch circuit connected to the second differential clock signal wiring line pair. Differential Characterized in that it is controlled by the lock signal.

The invention according to claim 68 is the same as claim 67.
In the semiconductor integrated circuit described above, the first switch circuit is formed of a PMOS transistor, and its gate electrode and source electrode are connected to the first differential clock signal wiring pair.

The invention described in Item 69 is the above Item 67.
In the semiconductor integrated circuit described above, the second switch circuit is formed of an NMOS transistor, and its gate electrode and source electrode are connected to the second differential clock signal wiring pair.

A semiconductor integrated circuit according to a seventy-seventh aspect of the present invention is an inverter circuit in which two clocked inverter circuits according to the sixty-seventh aspect are cascade-connected and which receives and inverts the output of the clocked inverter circuit of the latter stage. And a half-latch circuit having a configuration in which the output of the inverter circuit is fed back to the vertical connection point of the two clocked inverter circuits.

The invention according to claim 71 is the above-mentioned claim 70.
In the semiconductor integrated circuit described above,
And a second source clock differential wiring pair, and the first and second
The first and second switch circuits respectively arranged between the source clock differential wiring pair and the first and second clock differential wiring pair, and one of the first clock differential wiring pair. A connection circuit for connecting a power supply and grounding the other, grounding one of the second clock differential wiring pairs and connecting a power supply to the other, the first and second switch circuits, and the connection And a control circuit for controlling the circuit.

The invention according to claim 72 is the same as claim 71.
In the semiconductor integrated circuit described above, the control circuit is the first
And connecting one of the first clock differential wiring pair to a power supply when controlling the first and second switch circuits to separate the second clock differential wiring pair from the source clock differential wiring pair. However, the connection circuit is controlled so that the other is grounded, one of the second clock differential wiring pairs is grounded, and the other is connected to a power supply.

The invention according to claim 73 is the same as claim 72.
In the semiconductor integrated circuit described above, the control circuit is configured to control the first circuit when the content of the data input to the clocked inverter circuit does not change over time and when it is not necessary to transfer the data to the next stage. And controlling the second switch circuit and the connection circuit.

With the above configuration, according to the present invention, for example, when a differential signal composed of two complementary signals is transmitted,
One of the differential signals is transmitted using a signal line that also serves as a power supply line or a ground line of the receiver circuit, that is, one of the differential signals is placed on the power supply line or the ground line. In addition, the differential signal is input to two or more electrodes of a transistor forming the receiver circuit, for example, a source electrode and a gate electrode. Therefore, the potential of the gate electrode of the transistor of the receiver circuit changes according to the change in the other potential of the differential signal, and the power supply line or the ground line and the gate electrode of the transistor are connected by capacitive coupling, The small-capacity gate electrode electrically separated from the large-capacity power supply line or the ground line operates at high speed in response to the potential change of the power supply line or the ground line (that is, one potential change of the differential signal). Change. Therefore, even if the amplitude voltage of the differential signal is a minute amplitude voltage of about a fraction of the power supply voltage,
The potential difference between the potentials of the two or more electrodes (for example, the source electrode and the gate electrode) of the transistor forming the receiver circuit changes significantly, and the signal receiving circuit operates statically.

[0085]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below with reference to the drawings.

(First Embodiment) FIG. 1 shows an overall schematic configuration diagram of an embodiment of the present invention. The present embodiment proposes a clock signal transmission / reception circuit that reduces the delay time difference at any position when the system clock is distributed to every corner of the chip.

In the figure, A is a single-line input clock signal having an amplitude voltage equal to the difference between the power supply potential and the ground potential) (first amplitude voltage), and 1 is the single-line input clock signal A.
2 is a driver circuit for inputting a differential signal composed of the single-line input clock signal A and the inverted signal / A from the inverter 1. The amplitude voltage of the differential signal input to the driver circuit 2 is CM
Although the OS circuit has a full amplitude (that is, the first amplitude voltage), the driver circuit 2 outputs the input differential signal with an amplitude voltage (second amplitude voltage) smaller than the first amplitude voltage. Generates and outputs a differential signal. The inverter 1 and the driver circuit 2 constitute a differential signal generator D.

The internal structure of the driver circuit 2 is shown in FIG. The driver circuit 2 shown in the figure includes two output terminals 2m and 2n forming a pair, and first and second push-pull circuits 2x and 2y connected to the output terminals.
The first push-pull circuit 2x is connected to a first power supply terminal 2s having a predetermined potential and has two NMOS type transistors 2a and 2b. The differential signals A, / A is input. In this push-pull circuit 2x, when one side A of the differential signal is at "H" level, only one transistor 2a is turned on to connect the first power supply terminal 2s to one output terminal 2m, and the differential signal Of the other transistor / A is "H" level, the other transistor 2
Only b is turned on to connect the first power supply terminal 2s to the other output terminal 2n. In addition, the second push-pull circuit 2
y is connected to the second power supply terminal 2t and is connected to the other 2
The NMOS transistors 2c and 2d are provided, and the differential signals A and / A are input to both gate electrodes thereof. In the push-pull circuit 2y, when one of the differential signals A is at "H" level, only the other transistor 2d is turned on to connect the second power supply terminal 2t to the other output terminal 2n and When the other / A is at "H" level, only one transistor 2c is turned on and the second power supply terminal 2
t is connected to one output terminal 2m. The first and second
Difference V between both potentials V1 and V2 of the power supply terminals 2s and 2t
1-V2 is smaller than the potential difference between the differential signals A and / A, and is equal to the second amplitude voltage. The potential V2 of the second power supply terminal 2t is, for example, the ground potential.

In FIG. 1, 3 is a differential signal wiring pair driven by the driver circuit 2 and 4 is a receiver circuit (signal receiving circuit) for receiving the differential signals L1 and L2 of the differential signal wiring pair 3. ). This receiver circuit 4
Has a differential signal of the differential signal wiring pair 3 as its only input, and is statically interlocked with an electrical change of the input and has an amplitude voltage larger than the second amplitude voltage (third amplitude voltage). ) Signals T1 and T2 are output.

Next, a concrete structure of the receiver circuit 4 is shown in FIG.

In the figure, reference numeral 10 is a first CMOS which is composed of a PMOS transistor P1 and an NMOS transistor N1 whose drain electrodes are commonly connected to each other.
-Type inverter circuit 11 includes another PMOS-type transistor P2 and an N-type drain electrode that is commonly connected to the PMOS-type transistor P2.
It is a second CMOS inverter circuit composed of a MOS transistor N2.

The two inverter circuits 10 and 11 are
They are flip-flop connected to each other to form a flip-flop circuit 13. The output terminal of the flip-flop circuit 13 has the first and second inverter circuits 10, 1
Each two transistors (P1, N1) that make up 1,
Connection points T1 and T2 between the drain electrodes of (P2, N2)
Is.

Then, both the inverter circuits 10 and 11
The source electrode pairs of the mutual NMOS type transistor pairs N1 and N2 are independently connected to the differential signal wiring pair L1 and L2, respectively, and the PMOS type transistor pair P1 and P2.
The two source electrode pairs U1 and U2 are independently PMOS
Type first and second switch circuits P each including a transistor
It is connected to the power supply VCC through a switch pair composed of 3 and P4.

The first and second switch circuits P3 and P
Reference numeral 4 denotes a pair of differential signal wirings L1 and L for its gate electrode pair.
2 is connected to control the current driving capability.

The two inverter circuits 10 and 11, the switch circuits P3 and P4, and the differential signal wiring pair L1 and L2.
The connection relationship with is as follows. That is, the NMOS transistor N1 of one inverter circuit (for example, 10)
Source electrode of the differential signal wiring pair (for example, L
1), the other of the differential signal wiring pair (L
2) turns on one of the switch pairs (P4), and the other inverter circuit (1
The source electrode of the PMOS transistor (P2) of 1) is connected to the power supply Vcc.

With the above configuration, for example, the differential signal L
If the potential relationship between L1 and L2 is as shown in FIG. 3, NM of the inverter circuit 10 is reduced as L1 of the differential signal decreases.
The potential of the source electrode of the OS type transistor N1 decreases, the NMOS type transistor N1 tends to turn on, and the potential of the output terminal T1 begins to decrease.

On the other hand, the NMO of the other inverter circuit 11
In the S-type transistor N2, the potential of its source electrode rises as the potential of the other L2 of the differential signal rises, and
The potential of the gate electrode decreases as the potential of the output terminal T1 decreases, and the transistor N2 turns off. At this time, the PMOS transistor P2 of the inverter circuit 11 and one of the switch pairs P3 are both turned on, so that power is supplied from the power supply Vcc to the output terminal T2 via these, and the potential of the output terminal T2 rises.

Next, the NMO of the inverter circuit 10 is
In the S-type transistor N1, the potential of the gate electrode of the S-type transistor N1 rises due to the rise of the potential of the output terminal T2 in addition to the decrease of the potential of the source electrode thereof, and the NMOS-type transistor N1 is turned on more and Lower.

Therefore, the determination of the potentials of the output terminal pair T1 and T2 is stable. Further, when the potential of the differential signal changes, both the source electrode and the gate electrode of the NMOS-type transistor pair N1, N2 change in synchronization with the potential change of the differential signal, so the potential of the output terminal pair T1, T2. The change is fast.

(Second Embodiment) Next, a second embodiment of the present invention will be described with reference to FIG.

Only points different from the first embodiment will be described. That is, FIG. 4 shows an improved receiver circuit. In this receiver circuit 4 ', an NMOS type transistor pair N1, N2 and a PMOS type transistor pair P1, P2 are provided.
And an NMOS type transistor pair N
1, N2 gate electrode pair and output terminal pair T1, T
The feature is that the node pair which is also 2 is connected to the differential signal wiring pair 3 via the capacitance pair 15a and 15b.

That is, in FIG. 4, the NMOS transistor pair N1 and N2 and the differential signal wiring pair 3 are connected to each other by a capacitance 15
Cross-coupled via a and 15b. Specifically, one of the differential signals L1 is input to the source electrode N
In the MOS transistor N1, the gate electrode thereof receives the other differential signal L2 via the capacitor 15a, and the other differential signal L2 is inputted to the source electrode NM.
The OS-type transistor N2 has a configuration in which one of the differential signals L1 is input to the gate electrode thereof via the capacitor 15b.

With the above configuration, in the NMOS transistors N1 and N2, the potential of the gate electrode and the potential of the source electrode are controlled simultaneously, so that the differential signal L that is an input is supplied.
These NMOS-type transistor pairs N1 and N2 cause impedance changes at high speed with respect to the potential changes of 1 and L2, and the potential changes of the output terminal pairs T1 and T2 can be made even faster.

(Third Embodiment) Next, a third embodiment of the present invention will be described with reference to FIG. Only parts different from those of the first and second embodiments will be described.

The figure shows a modification of the receiver circuit. In the receiver circuit 4 ″ of the figure, N5 and N6 are NMO
These are two switch circuits that form a switch pair with S-type transistors. One switch circuit (first switch circuit) N6 includes one of the differential signal wiring pairs 3a and the ground line V.
It is arranged between ss and the gate electrode of the second CM.
The PMOS type transistor P of the OS type inverter circuit 11
2 source electrodes U2. On the other hand, the other switch circuit (second switch circuit) N5 is arranged between the other 3b of the differential signal wiring pair and the ground line Vss, and its gate electrode is PM of the first CMOS inverter circuit 10.
It is connected to the source electrode U1 of the OS type transistor P1.

Therefore, in the present embodiment, for example, when one of the differential signals L1 is at the ground potential and the other L2 is at a potential higher than the differential potential difference, one NMOS type of the switch pair is used. Since the transistor pair N6 is turned on and the wiring 3a of one of the differential signals L1 is connected to the ground line Vss, the signal wiring that should originally be fixed to the ground potential is connected to the ground potential near the input of the receiver circuit. It will be possible to keep stable. Therefore, it is possible to correct the difference in reference voltage between the arrangement position of the driver circuit 2 and the arrangement position of the receiver circuit 4 ″, for example, the difference in the ground level, and suppress the influence of the difference in the potential of the ground line on the chip. Alternatively, it is possible to suppress the floating of the potential of the signal line due to the wiring resistance.

(Fourth Embodiment) Next, a fourth embodiment of the present invention will be described with reference to FIG.

Only the points different from the third embodiment will be described. In the receiver circuit 4 ″ of the third embodiment, the gate electrodes of the NMOS type transistor pair N5 and N6 are connected to the source electrode pairs U1 and U2 of the PMOS type transistor pair P1 and P2 of the flip-flop circuit 13. In the receiver circuit 4 ′ ″ of this embodiment, the differential signal wiring pair 3 is connected. The connection relationship is a cross-coupled connection between the gate electrode and the drain electrode in each NMOS type transistor pair N5 'and N6'. Specifically, one of the differential signals L1 is input to the drain electrode N
In the MOS type transistor N6 ′, the other side L2 of the differential signal is input to the gate electrode and the other side L2 of the differential signal is input to the drain electrode of the NMOS type transistor N5 ′.
Then, one of the differential signals L1 is input to the gate electrode.

Therefore, also in the present embodiment, as in the third embodiment, the signal wiring which should originally be at the ground level Vss at the arrangement position of the receiver circuit 4 '''is connected to the driver circuit 2. It is possible to fix the same ground level Vss as that of the arrangement point and to enable the stable operation of the receiver circuit 4 '''.

Moreover, in the third embodiment, the NM
While the OS type transistors N5 and N6 are both turned on with a low impedance, only one of the NMOS type transistors N5 'and N6' is turned on in the present embodiment, so that the differential signal wiring is grounded. The difference in impedance value can be increased, and further stabilization and higher speed are possible.

(Fifth Embodiment) Next, a fifth embodiment of the present invention will be described with reference to FIG.

Only the differences from the first to fourth embodiments will be described. The difference from the above embodiment is the configuration of each inverter of the inverter circuit pair in the flip-flop connection in the receiver circuit 4 ″ ″ of FIG. 7.

That is, the PMOS transistors P1 and P2 of the inverter circuit pair 10 and 11 of the fourth embodiment shown in FIG. 6, that is, the transistors forming the power supply load circuit are formed by the NMOS transistors N3 and N4. The gate electrodes and the drain electrodes are diode-connected so that the NMOS transistors N3 and N4 operate in the saturation region.

With the above configuration, the first and second NMOs
The high level of the output terminal pair T1, T2 of the flip-flop circuit 13 'composed of the S-type inverter circuits 10', 11 'is equal to the threshold voltage of each NMOS type transistor N3, N4 rather than the potential of the power supply Vcc. Declines,
This decrease is caused by, for example, the NMOS type load transistor N
If a threshold voltage lower than the normal value is set for 3 and N4, the influence can be suppressed to a small level.

Further, the NMOS type load transistor N
3 and N4 are PMOSs having two diode connecting portions 10a 'and 11a' connecting the gate electrode and each drain electrode.
Type transistor (first and second switch circuits) P3
It is connected to the power supply Vcc via a switch pair composed of P4, and two PMOS type transistors P of this switch pair are connected.
3 and P4 are controlled by the differential signals L1 and L2. Therefore, impedance control for the power source Vcc of the NMOS type load transistors N3 and N4 is performed by the switch pair P.
3 and P4, the rate of change of the potential of the output terminal pair T1 and T2 with respect to the potential change of the differential signals L1 and L2 is also accelerated.

(Sixth Embodiment) Next, a sixth embodiment of the present invention will be described with reference to FIG.

In the figure, 20 and 21 are respectively shown in FIG.
Inverters for inverting the external clock signal IN having the first amplitude voltage dVo of full amplitude of CMOS level as shown in the signal waveform of FIG. It is the 1st and 2nd driver circuit which outputs the differential signal of voltage. The inverter 20 and the first driver circuit 22
Thus, the first differential signal generator 27 is configured, and the inverter 21 and the second driver circuit 23 configure a second differential signal generator 28.

The first driver circuit 22 shown in FIG.
The differential signals U1 and U2 as shown in are generated. The differential signals U1 and U2 have a second amplitude voltage dV1 (dV1 <d) whose amplitude voltage is smaller than the first amplitude voltage dVo.
Vo) and is based on the power supply potential Vcc. That is, one of them is composed of a power supply potential Vcc, and the other is composed of a combination of potentials having a potential difference of a minute voltage dV1 from the power supply potential Vcc.

On the other hand, the second driver circuit 23 is similar to that shown in FIG.
The differential signals L1 and L2 as shown in 3 are generated. The differential signals L1 and L2 have a third amplitude voltage dV2 (dV2 <dV2 <whose amplitude voltage is smaller than the first amplitude voltage dVo).
dVo), and is based on the ground potential Vss.
That is, one is composed of a ground potential Vss and the other is composed of a combination of potentials having a potential difference of a minute voltage dV2 from the ground potential Vss. The internal configurations of the first and second driver circuits 22 and 23 are the same as the configurations of FIG. 2 described above, and will be described in detail in a ninth embodiment described later.

Further, in FIG. 8, 24 and 25 are first and second differential signal wiring pairs for transmitting the differential signals from the driver circuits 22 and 23, respectively, and 26 is the two sets of differential signals. It is a receiver circuit (signal receiving circuit) that receives the first and second differential signals transmitted to the wiring pair 24, 25.

The receiver circuit 26 uses the first and second differential signals as its sole inputs, and statically interlocks with the electrical changes of its inputs to generate the second and the second differential signals as shown in FIG. The differential signals T1 and T2 of the fourth amplitude voltage dV3 (dV3> dV1, dV2) larger than the amplitude voltages dV1 and dV2 of 3 are output.

The specific construction of the receiver circuit 26 is shown in FIG. The difference from the receiver circuit of the first embodiment is that each of the two CMOS inverter circuit pairs 10 and 11 forming the flip-flop circuit 13 has P
The source electrode pairs of the MOS type load transistors P1 and P2 are directly connected to correspond to the first differential signal wiring pair 24, while the source electrode pairs of the NMOS type transistor pairs N1 and N2 are respectively connected to the second differential signal. It is a point that is directly connected corresponding to the wiring pair 25.

Therefore, in the present embodiment, the potentials of the source electrode and the gate electrode of the PMOS type transistor pair P1 and P2 of the flip-flop circuit 13 have the first difference as described in the first embodiment. The potentials of the source electrode and the gate electrode of the NMOS type transistor pair N1 and N2 change in synchronization with the potential changes of the dynamic signals U1 and U2 and the potential changes of the second differential signals L1 and L2. . Therefore, even if the amplitude voltage of the first and second differential signals is a minute voltage smaller than the potential of the power supply Vcc, the flip-flop circuit 13 operates at high speed.

As shown in the receiver circuit 26 'of FIG. 10, the two cross-coupled gate electrode nodes of the CMOS type inverter circuit pair 10 and 11 of the flip-flop circuit 13 are connected to capacitors 30a, 30b and 15a, respectively.
The first and second differential signal wiring pairs 24, 2 via 15b
If connected to 5, the four transistors P1, P2, N1 and N2 operate quickly in response to the potential changes of the first and second differential signals, as in the second embodiment, and the output terminals The potential changes of the pair T1 and T2 come to be linked at high speed.

Further, as shown in the receiver circuit 26 '' of FIG. 11, the flip-flop circuit 13 'is composed of NMOS type inverter circuits 10' and 11 ', and its NMO
Diode connection portion 1 of S-type load transistors N3 and N4
The receiver circuit can also be configured by connecting 0a ′ and 11a ′ to the first differential signal wiring pair 24.

Although the first to sixth embodiments have been described above, various combinations of these embodiments can be used to realize a desired signal transmitting / receiving circuit.

(Seventh Embodiment) Next, FIGS.
A seventh embodiment of the present invention will be described using.

The feature of the present embodiment is that a differential signal is input to the substrate electrode pair of the MOS transistor pair which constitutes the receiver circuit, and the impedance of each MOS transistor is controlled. In other words, in the first to sixth embodiments, the differential signal change is transmitted to the gate electrode and the source electrode of the transistor, the potential change width between both electrodes is increased, and the potential of the differential signal is increased. While the change was detected at high speed, in the present embodiment, the potential of the differential signal is changed not only by the potential change between the gate electrode and the source electrode but also by the potential change between the substrate electrode and the source electrode. It detects changes.

That is, in the receiver circuit 4 '' shown in FIG. 5, the PMOS type transistor pairs P1 and P2, P3 and P are used.
Each substrate electrode pair of 4 has PMOS type transistors P1 and P
Two source electrode pairs U1 and U2 are directly cross-coupled. Also, the NMOS type transistor pair N1 and N2
Each substrate electrode pair of N5 and N6 is directly cross-coupled to the wiring pair 3 of the differential signals L1 and L2 with reference to the ground potential. Furthermore, in the receiver circuit 4 ″ ″ shown in FIG.
The substrate electrode pair of the NMOS load transistor pair N3, N4 of the flip-flop circuit 13 'is directly cross-coupled to the source electrode pair U1, U2 of the NMOS transistor N3, N4. Then, since the substrate bias of the MOS transistors forming the receiver circuit is controlled by the potential difference and the impedance difference of the differential signal wiring pair 3, it becomes possible to control the threshold voltage of each MOS transistor. In addition, it is possible to perform impedance control linked to the potential changes of the differential signals L1 and L2.

(Eighth Embodiment) Next, an eighth embodiment of the present invention will be described with reference to FIGS. 3 to 7 and 9 to 11.

The characteristic point of this embodiment is shown in FIGS.
And in the receiver circuit shown in FIGS. 9 and 10,
Inverter circuit pair PMOS type load transistor pair P
The threshold voltage of 1 and P2 is set lower than the threshold voltage of other PMOS type transistors formed on the same chip, and in the receiver circuit shown in FIGS. The threshold voltage of the NMOS load transistor pair N3, N4 is set to be lower than the threshold voltages of other NMOS transistors formed on the same chip.

With the above-described configuration, in the present embodiment, the low level of the output terminal pair T1 and T2 of the receiver circuit slightly floats (potential rise), but the time delay of the output change with respect to the potential change of the differential signal is delayed. Can be suppressed to a small value.
In particular, it is effective when the power supply Vcc is a low voltage around 1 V or less.

(Ninth Embodiment) Next, a ninth embodiment of the present invention will be described with reference to FIGS.

This embodiment is based on the above-mentioned sixth to eighth embodiments.
3 shows a signal transmission circuit that transmits a differential signal to the receiver circuit of the embodiment.

That is, FIG. 12 shows a specific configuration of the driver circuits 22 and 23 of the sixth embodiment shown in FIG.
In the figure (a), the driver circuit 22 has two P
A first push-pull circuit 22x composed of MOS type transistors 22a and 22b and a second push-pull circuit 22y composed of two other PMOS type transistors 22c and 22d. V
Using the potential of cc as a reference voltage, the first differential signals U1 and U2 of small amplitude are generated near the potential of the power supply Vcc. In the same figure (b), the driver circuit 23 is composed of first and second push-pull circuits 23x and 23y which are also composed of four NMOS transistors 23a to 23d, and as shown in FIG. The second differential signals L1 and L2 having a small amplitude are generated near the ground potential with Vss as a reference voltage.

In FIG. 12 (a), VU1 and VU2
Are source power sources on the high side and the low side of the differential signals U1 and U2, respectively, and the source power source VU1 on the high side is the power source V
cc, and the potential difference between the two power supplies is equal to the second amplitude voltage dV1 as shown in FIG. In FIG.
VL1 and VL2 are high-side and low-side source power supplies of the differential signals U1 and U2, respectively, and the low-side source power supply VL2 is a ground power supply, and the potential difference between both power supplies is shown in FIG.
Equal to the third amplitude voltage dV2 as shown in.

Next, FIG. 14 shows a configuration for generating the source power supplies VU2 and VL1.

FIG. 14 shows a structure by resistance division. The amplitude voltage (second amplitude voltage) dV1 of the first differential signals U1 and U2 and the amplitude voltage (third amplitude voltage) dV2 of the second differential signals L1 and L2 are the power supply Vcc and the ground V.
It is realized with ss. Therefore, in FIG. 14, if the first and second driver circuits 22 and 23 and the insertion resistor R are connected in series between the power supply Vcc and the ground Vss, VU1 = Vcc VU2 = Vcc-dV1 VL1 = Vss + dV2 VU2 = It becomes Vss. Here, since the minute voltages dV1 and dV2 are determined by the resistance voltage division between the resistance of the switches forming the first and second driver circuits 22 and 23 and the insertion resistance R, the value of the insertion resistance R is increased. The smaller the voltage d
The values of V1 and dV2 become smaller.

FIG. 15 shows another structure for generating the source power supplies VU2 and VL1. The configuration of FIG. 15 is a configuration based on capacity division.

That is, in FIG. 15, the third driver circuit 40 is arranged between the first and second driver circuits 22 and 23, and these are connected in series between the power supply Vcc and the ground Vss. It is adopted.

The third driver circuit 40 inserted in the middle has the same configuration as either one of the first and second driver circuits 22 and 23 (the first driver circuit 22 in the figure), and its output A dummy capacitor Cm is connected to the pair. The capacitance value of the dummy capacitance Cm is set to a value smaller than the stray capacitance value of the first and second differential signal wiring pairs 24 and 25. In this case, the potentials VU2, VL1 are determined by capacitance division of the capacitance value of the dummy capacitance Cm and the wiring capacitance values of the first and second differential signal wiring pairs 24, 25, and the values of the potentials VU2, VL1. Minute voltage dV
The values of 1 and dV2 are determined.

In the capacity division configuration shown in FIG. 15, the first
When the driver circuit 22 of FIG. 2 discharges the electric charge charged in the first differential signal wiring pair 24, the discharged electric charge simultaneously charges the second driver circuit 23 to the second differential signal wiring pair 25. The electric charge is reused in the second driver circuit 23 through the dummy capacitor Cm. Therefore, while driving the first and second driver circuits 22 and 23, one of the driver circuits operates by the reuse charge, so that the current consumption of one of the driver circuits becomes almost “0”, and thus the low consumption It is possible to provide a signal receiving circuit that has a high tracking speed, that is, a small clock skew while achieving power consumption.

(Tenth Embodiment) Next, a tenth embodiment of the present invention will be described with reference to FIGS. 16, 17 and 18.

In FIG. 16, 50 is a first flip-flop circuit composed of the NMOS type transistors shown in FIG. 11 described in the sixth embodiment, and 51 is a second flip-flop circuit similarly composed of PMOS type transistors. And 52 is an auxiliary receiver circuit (auxiliary receiving circuit) for receiving the outputs A to D of the first and second flip-flop circuits 50 and 51.

The first flip-flop circuit 50 has
First and second NMs flip-flop connected to each other
It is composed of OS type inverter circuits 50a and 50b. Each of the NMOS type load transistors N3 and N4 of the inverter circuits 50a and 50b has diode connecting portions 50c and 50d which connect the gate electrode and the source electrode thereof, respectively. The NMOS transistor pair N1 and N2 of the inverter circuit pair 50a and 50b has a second source electrode pair.
Of the load transistor pair N3 and N4, and the diode connection portions 50c and 50d of the load transistor pair N3 and N4 are connected to the first differential signal wiring pair 24.

In addition, the second flip-flop circuit 5
1 is a first and a second flip-flop connected to each other
Of PMOS inverter circuits 51a and 51b.
Each of the PMOS type load transistors P3 and P4 of the inverter circuits 51a and 51b has a diode connecting portion 51c and 51, respectively, which connects the gate electrode and the drain electrode thereof.
have d. P of the inverter circuit pair 51a, 51b
The source electrodes of the MOS transistor pairs P1 and P2 are connected to the first differential signal wiring pair 24, and the diode connection portions 51c and 5 of the load transistor pairs P3 and P4 are connected.
1d is connected to the second differential signal wiring line pair 25.

The internal structure of the auxiliary receiver circuit 52 is shown in FIG. The auxiliary receiver circuit 52 shown in FIG. 18A has first to fourth CMOS type inverter circuits 53 to 56. The first and second inverter circuits 53 and 54 have a common output terminal OT and each of the first wirings of the first differential signal wiring pair 24 (one of the differential signals U1 is transmitted in the figure). Wiring) and one wiring of the second differential signal wiring pair 25 (in the drawing, one wiring L1 of the differential signal is transmitted) as a predetermined power source and a ground power source. One of the signals A from the output pair of the second flip-flop circuit 51 is input, and one of the signals C from the output pair of the first flip-flop circuit 50 is input to the second inverter circuit 54. On the other hand, the third and fourth inverter circuits 55, 56
Have a common output terminal XOT, and each of the other wiring of the first differential signal wiring pair 24 (in the drawing, the other wiring U2 of the differential signal is transmitted) and the second differential signal wiring pair. Two
The other wiring of 5 (the wiring through which the other L2 of the differential signal is transmitted in the figure) is used as a predetermined power source and a ground power source, and the third inverter circuit 55 is connected to the output pair of the second flip-flop circuit 51. The other signal B is input, and the other signal D from the output pair of the first flip-flop circuit 50 is input to the fourth inverter circuit 56.

In this embodiment, the potential changes of the output pairs A to D of the first and second flip-flop circuits 50 and 51 are as shown in FIGS. 17 (a) and 17 (b). Time t = to shown in FIG. 9A and time t shown in FIG.
= T1, the complementary potential relationship is reversed in each pair. It should be noted that the output B does not go low to the ground potential and the output C does not go high to the power supply potential in FIG. On the other hand, in the same figure (b), the output A does not go low to the ground potential, and the output D does not go high to the power supply potential. The reason is that the inverter circuit connected to each flip-flop is a diode load type.
Therefore, when this output is connected to a simple logic circuit, a through current is involved, which causes unstable operation.

In order to prevent the shoot-through current, in the present embodiment, the auxiliary receiver circuit 5 having the structure shown in FIG.
Two are provided.

FIG. 18B shows a modified example of the auxiliary receiver circuit. This auxiliary receiver circuit 52 'has two sets of two inverter circuits connected in series.

That is, the auxiliary receiver circuit 52 'of FIG. 18 (b) is composed of the NMOS type inverter circuit 6 which constitutes one set.
0 and PMOS type inverter circuit 61, and another NMOS type inverter circuit 62 and PMOS forming another set.
Type inverter circuit 63. The set of NMOS
Type inverter circuit 60 and PMOS type inverter circuit 6
1 are connected in series to each other to form a series circuit, and the series connection point becomes an output terminal OT. This series circuit is
One of the differential signals U1 and U2 (U1 in the figure) and one of the second differential signals L1 and L2 (L1 in the figure) as a power source and a ground power source, and further, in each of the inverter circuits 60 and 61, One output C of one flip-flop circuit 50
And one of the outputs A of the second flip-flop circuit 51 is input to the gate electrode.

Further, the other set of the NMOS type inverter circuit 62 and the PMOS type inverter circuit 63 has the same structure. That is, both inverter circuits 6
3, 64 are connected in series with each other to form a series circuit, and the series connection point becomes the output terminal XOT. This series circuit uses the other U2 of the first differential signal and the other L2 of the second differential signal as a power source and a ground power source, and further, in each inverter circuit 62, 63, the first flip-flop circuit 50 The other output D and the second flip-flop circuit 5
The other output B of 1 is input to the gate electrode.

(Eleventh Embodiment) Next, an eleventh embodiment of the present invention will be described with reference to FIGS.

In the above description, the signal receiving circuit is constituted by the flip-flop circuit, but in the present embodiment, it is constituted by the inverter circuit.

FIG. 19 shows a semiconductor integrated circuit including the signal receiving circuit of the present invention. In the figure, 70 is the same as in FIG.
And a first differential clock signal UCLK, UXC of a small amplitude voltage (a voltage of half or less of the power supply voltage) with reference to the power supply potential Vcc from the first driver circuit 22 shown in FIG.
The first differential signal wiring pair 71 for transmitting LK is a small-amplitude voltage (voltage equal to or less than half of the power supply voltage) based on the ground potential Vss from the second driver circuit 23 shown in FIGS. 8 and 12. ) Second differential clock signals LCLK, LX
It is a second differential signal wiring pair for transmitting CLK.

Reference numeral 72 is an inverter circuit (signal receiving circuit) for receiving the differential clock signals from the first and second differential signal wiring pairs 70 and 71. Also generates a clock signal Q having a large amplitude voltage. SW1 is a first switch circuit activated at the falling edge of the clock signal Q from the inverter circuit 72, and 73 is data A when the first switch circuit SW1 is activated through the switch circuit SW1. This is a latch circuit that is input, and latches the input data A at the rising edge of the clock signal Q from the inverter circuit 72. Further, 76 is the inverter circuit 7
2 is another inverter circuit that inverts the clock signal Q from SW2, and SW2 is a second switch circuit that is activated at the falling edge of the inverted clock signal / Q from the other inverter circuit 76. The data latched at 73 is output.

The inverter circuit (signal receiving circuit) 72
FIG. 20 shows a specific configuration of the above. In the figure, the inverter circuit 72 is composed of a CMOS type inverter circuit. The CMOS type inverter circuit 72 is composed of a PMOS type transistor P1 and an NMOS type transistor N1 whose source electrode is connected to the drain electrode of the transistor P1. An inverter circuit 74 is further provided at the connection point of both transistors P1 and N1. Connected, this inverter circuit 74
Is the clock signal Q. And the PMOS
For the gate electrode and the source electrode of the p-type transistor P1
Differential clock signals UCLK and UXCLK of
The second differential clock signals LCLK and LXCLK are input to the gate electrode and the source electrode of the NMOS transistor N1. Therefore, when the PMOS transistor P1 is ON, one of the first differential clock signals UXC
When LK turns on the NMOS transistor N1, the second
One of the differential clock signals LXCLK is output to the inverter circuit 74. Therefore, the amplitude voltage of the clock signal (detection signal) Q output from the inverter circuit 74 is near the potential difference between the power supply potential Vcc and the ground potential Vss.

In the above configuration, in each of the MOS transistors P1 and N1 of the inverter circuit 72, the differential clock signal is input to the gate electrode and the source electrode thereof, and when the potential of the differential clock signal changes, the potential changes. Synchronously, the potentials of the gate electrode and the source electrode transit in opposite directions. Therefore, these MOS transistors P1,
When N1 is turned off, a negative voltage is applied between the gate electrode and the source electrode (that is, the potential difference of the differential clock signal is reverse biased), so that the threshold voltage is low, for example, Even if it is smaller than 0v, it cuts off sufficiently.
Therefore, the transmitted differential clock signals UCLK, UXC
Even if the amplitude voltage of LK, LCLK, and LXCLK is a minute voltage, the differential clock signal can be received statically and reliably, so that the differential clock signal having a minute amplitude is transmitted, and the current consumption of the semiconductor integrated circuit is reduced. Is possible.

Moreover, in the conventional configuration shown in FIG. 35 (a), the differential signals L1 and L2 are input to the gate electrodes of the NMOS transistors N1 and N2 that form a part of the receiver circuit, and their source electrodes are grounded. Since the potential is fixed to the ground potential, the gate-source voltages Vgs1 and Vg of the NMOS transistors N1 and N2 are fixed.
The difference ΔVgs (= Vgs1−Vgs2) of s2 cannot be made larger than the potential difference between the differential signals L1 and L2 as shown in FIG. On the other hand, in the present embodiment, as shown in FIG. 21A, the potentials of the source electrodes of the NMOS transistors N1 and N2 change in the direction opposite to the direction in which the potentials of the gate electrodes thereof change. Figure (b)
As shown in, the difference ΔVgs between the gate-source voltages Vgs1 and Vgs2 of both transistors N1 and N2 can be doubled as compared with the conventional configuration of FIG. Therefore, the operation can be further speeded up and the delay time can be shortened.

22 and 23 show modifications of the inverter circuit. In each figure, another inverter circuit 75 is provided separately from the inverter circuit 72 shown in FIG. 20, and in the configuration of this inverter circuit 75, the gate electrode and the source electrode of each MOS transistor and the differential clock signal are As shown in FIG. 23, the connection relationship is set to be complementary to that of the inverter circuit 72.

Therefore, in this modification, the inverter circuit 76 for further inverting the clock signal Q of the inverter circuit 72 in FIG. 19 can be eliminated. In particular, this is an effective embodiment for an application in which a delay time due to the inverter circuit 76 causes a problem.

(Twelfth Embodiment) Next, a twelfth embodiment of the present invention will be described with reference to FIGS. In FIG. 24, reference numeral 80 denotes a pair of wiring lines composed of two signal lines, through which the power supply potential V1 and the control signal SG1 are transmitted. Reference numeral 81 denotes another pair of wiring lines composed of two signal lines, through which another power supply potential V2 and the control signal SG2 are transmitted.

Reference numeral 82 is a power line switch (switch means), 83 is a ground line switch (switch means), and 84 is a logic section (circuit section). Power line switch 82
Is composed of a PMOS transistor QP1, its gate electrode is connected to the control line of the control signal SG1, and its source electrode is connected to the power supply line of the power supply potential V1. The ground line switch 83 is composed of a PMOS transistor QN1, and has its gate electrode connected to the control line for the control signal SG2 and its source electrode connected to the power supply line of the power supply potential V2.

The threshold voltage Vt (QP1) of the PMOS transistor QP1 of the power line switch 82 is shown in FIG.
As shown in FIG. 5, it is set to a value (-0.3 V in FIG. 25) equal to or less than the threshold voltage (-0.3 V) of the PMOS type transistor forming the logic section 84.

The threshold voltage Vt (QN1) of the NMOS transistor QN1 of the ground line switch 83 is equal to the threshold voltage (0.3V of the PMOS transistor constituting the logic portion 84, as shown in FIG. ) Or less (0.3 V in FIG. 25).

The power supply voltages V1 and V2, the control signal SG
1 and SG2 are controlled by a potential control circuit (potential control means) 77. That is, the power supply potential V1 is the predetermined potential Vcc.
At (3.3 V), the power supply potential V2 is fixedly controlled to the ground potential Vss. On the other hand, the control signal SG1 is set to the ground potential Vss (0V) so that the power line switch 82 (PMOS type transistor QP1) is turned on when the logic section 84 is active (activated), and the logic section 84
Does not need to operate in sleep mode (inactive state)
Then, the power line switch 82 (PMOS type transistor Q
P1) makes a transition in the direction of turning off (that is, a potential increasing direction) and the potential at the transition reaching point is the potential of the source electrode of the PMOS transistor QP1 (Vcc = 3.3V) at a minute potential dV (eg 0.3V). ), And is controlled to a potential (3.3V + 0.3V) that overdrives the gate electrode. Further, the control signal SG2 is set to the power supply potential Vcc so that the ground line switch 83 (NMOS type transistor QN1) is turned on when the logic section 84 is active.
When the logic section 84 is set to (3.3 V) and the logic section 84 is in the sleep mode, the ground line switch 83 (NMOS type transistor QN1) is turned off (that is, the potential is decreased).
And the potential at the transition reaching point exceeds the potential (Vss = 0V) of the source electrode of the NMOS transistor QN1 by a minute potential dV (for example, 0.3V) to overdrive the gate electrode (0V-0 .3V).

Here, conventionally, the threshold voltage of the transistor forming the logic portion is low (for example, 0.3).
Therefore, the threshold voltage of the transistors forming the power supply line switch and the ground line switch is set to a normal value (for example, 0.6 V), and the through current of the logic unit that flows in the sleep mode of the logic unit is set. The power supply line switch and the ground line switch are limited to a small value. However, in this configuration, since it is necessary to flow a large current when the logic section is active, it is necessary to configure the power supply line switch and the ground line switch with large-sized transistors, which has a drawback of increasing the layout area. This problem becomes more serious as the normal threshold voltage becomes closer to the power supply voltage.

However, in the present embodiment, the threshold voltages of the MOS transistors QP1 and QN1 forming the power line switch 82 and the ground line switch 83 are the same as the threshold voltages of the transistors forming the logic section 84. Since the same or smaller value is set, a larger current flows per unit channel when the logic section 84 is active, and it is not necessary to use a large-sized transistor, and the layout area can be small.
Moreover, in the sleep mode, the gate electrodes of the power supply line switch 82 and the ground line switch 83 are smaller than the normal threshold value (0.6V-0.3V = 0.3).
V), it is possible to control these switches 82 and 83 further to the off state (high impedance state) by being overdriven to a potential exceeding the potential of the source electrode, so that these power line switch 82 and ground line switch 83 are It is possible to sufficiently cut off, and thus it is possible to limit the shoot-through current flowing in the sleep mode to a small value.

(Thirteenth Embodiment) Next, a thirteenth embodiment of the present invention will be described with reference to FIGS. 25 and 26.

In the present embodiment, in the twelfth embodiment, the gate electrodes of the power supply line switch 82 and the ground line switch 83 are divided by a voltage amount (a voltage smaller than a normal threshold value when the logic portion 84 is in the sleep mode). Instead of overdriving only 0.3 V), the source electrodes of the power supply line switch 82 and the ground line switch 83 are overdriven.

That is, in FIG. 26, reference numerals 85 and 86 denote variable output potential DC / D for controlling the power supply potentials V1 and V2, respectively.
Each of the converters 85 and 86 is a C converter and converts the external power supply Vcc and the ground potential Vss into power supply potentials V1 and V2, respectively. The converters 85 and 86 make the output potential variable by changing the chopper ratio in the case of the internal configuration using the inductance or by switching the reference voltage in the case of the type that outputs by comparing with the reference voltage.

Power supply potentials V1, V2 and control signal SG1,
Specifically, SG2 is controlled as shown in FIG. 25 in contrast to the twelfth embodiment.

That is, when the control signal SG1 is active, the power line switch 82 (PMOS type transistor QP
The ground potential Vss (0V) is controlled to turn on 1), and the power supply potential Vcc (3.3V) is controlled to turn off the power supply line switch 82 in the sleep mode.

On the other hand, the power supply potentials V1 and V2 are controlled to different potentials in the active mode and the sleep mode. Specifically, as shown in FIG. 25, when the power supply potential V1 is active, the power supply potential Vcc (3 ....) turns on the power supply line switch 82 (PMOS type transistor QP1).
The control signal SG is controlled to 3 V) so that the power line switch 82 is further turned off in the sleep mode.
The minute voltage component d that becomes smaller than the normal threshold value in the direction opposite to the potential transition direction (potential increasing direction) of 1 (potential decreasing direction)
It is controlled to a predetermined potential (Vcc-dV = 3.3V-0.3V) by changing V (0.6V-0.3V = 0.3V).

Similarly, when the power supply potential V2 is active, the ground line switch 83 (NMOS type transistor QN
1) is controlled to the ground potential Vss (0V) so as to turn on, and in the sleep mode, the direction opposite to the potential transition direction (potential decreasing direction) of the control signal SG2 so as to further turn off the ground line switch 83. Minute voltage component dV (= 0.3
V), and a predetermined potential (Vss + dV = 0V +
0.3 V).

Therefore, in the present embodiment as well, similar to the twelfth embodiment, even if the transistors of low threshold voltage are used as the power supply line switch 82 and the ground line switch 83, they pass through in the sleep mode. These switches 82 and 83 can be cut off to such an extent that the current does not matter, and when active, a larger threshold current can be used to flow a larger current per unit channel width, so a large-sized transistor is used. There is an effect that it is not necessary to do so and the layout area is small.

It is to be noted that the twelfth and thirteenth embodiments are combined, that is, both the potentials of the gate electrode and the source electrode of the MOS transistors constituting the power line switch 82 and the ground line switch 83 are supplied to these transistors. If control is performed to further cut off, the threshold voltages of the MOS transistors forming these switches 82 and 83 can be further reduced, and can be set to 0V.

(Fourteenth Embodiment) Next, a fourteenth embodiment of the present invention will be described with reference to FIGS. 27 to 30. In this embodiment mode, a semiconductor having a pipeline structure in which a logic circuit or an arithmetic circuit is divided into a plurality of stages in the direction of the processing order and divided into a plurality of stages, and a switch circuit and a latch circuit are arranged between the respective stages. The improvement of integrated circuits. Hereinafter, only one stage will be illustrated and described.

In FIG. 27, UCLK and UXCLK are referenced to power supply potential Vcc, and first differential clock signals LCLK and LXCLK having a smaller amplitude voltage than external amplitude clock signal CLK of CMOS level shown in FIG.
As shown in FIG. 28, 90 indicates a second differential clock signal having a minute amplitude voltage similar to the above, which is based on the ground potential Vss.
Is a first differential signal wiring pair for transmitting the first differential clock signals UCLK and UXCLK, and 91 is a second pair for transmitting the second differential clock signals LCLK and LXCLK.
20 is an inverter circuit (control means) as the signal receiving circuit shown in FIG.
Upon receiving the first and second differential clock signals, the internal inverter circuit 74 outputs a clock signal (another clock signal) Q which becomes low when the external clock signal CLK is high.

Reference numeral 92 is an inverter circuit for inverting the clock signal Q from the inverter circuit 72, and SW1 is a first switch circuit for receiving the clock signal Q from the inverter circuits 72 and 92 and its inverted signal XQ. , Is activated when the clock signal Q is low and inputs differential data A and XA. SW2 is the inverter circuit 7
A second switch circuit for receiving the clock signal Q from 2 and 92 and its inverted signal XQ, which is activated when the clock signal Q is high.

Further, 93 is a latch circuit which latches the differential data A, XA from the first switch circuit SW1 and outputs the latched differential data as differential signals B, XB.
Is output to the second switch circuit SW2. The latch circuit 93 is of a dynamic type and includes a flip-flop unit 93a, a power supply switch (first switch unit) PQ1 and a ground power supply switch (second switch unit) NQ2.

The power supply switch PQ1 is a PMOS
, A gate electrode and a source electrode thereof are connected to the first differential signal wiring pair 90, and a drain electrode thereof is connected to the flip-flop section 93a. The ground power supply switch NQ1 is composed of an NMOS transistor, and its gate electrode and source electrode are connected to the second differential signal wire pair 91, and its drain electrode is connected to the flip-flop section 93a.

With the above configuration, in the present embodiment, the operation of dynamic latch circuit 93 is controlled by power supply switch PQ1 and ground power supply switch NQ1 as shown in FIG. That is, the clock signal CL
In the half cycle of K (low period), the first switch circuit SW
When 1 is disconnected, both of the power supply switches PQ1 and NQ1 are turned on and the second switch circuit SW2 is also turned on. Therefore, the data latched by the latch circuit 93 is transferred to the second switch circuit. It is output to the output line pair 94 via SW2, and the output C of the output line pair 94,
The potential of XC is fixed.

On the other hand, in the other half cycle (high period) of the clock signal CLK, the second switch circuit SW2 is turned off and the first switch circuit SW1 is turned on. At this time, the dynamic latch circuit 93 is used. Since both power supply switches PQ1 and NQ1 are turned off, the differential contacts B and XB of the latch circuit 93 are input points A and XA.
Determined by Here, even when the data value input this time is changed in comparison with the data value latched last time, as described above, the power supply of the latch circuit 93 (that is,
One of the first and second differential signal wiring pairs 90, 91 UCL
K, LXCLK) are both power supply switches PQ1,
Since it is separated by turning off NQ1, data is inverted and written without passing through current.

Therefore, in the present embodiment, the first and second
The differential signal wiring pair 90 and 91 are used to control power supply to the dynamic latch circuit 93, and new data is fetched in the half cycle of the clock signal CLK while avoiding collision between input data and latch data. In the remaining half cycle of CLK, even if the signal has a slight potential difference, it is received by the differential amplifier, so that it can be stably amplified and data can be transferred.

FIG. 29 shows a case in which the first switch circuit SW1 of FIG. 28 is replaced with a CMOS type transistor, and a first switch circuit SW1 'composed of only NMOS type transistors is provided. There is.

When the first switch circuit SW1 'is composed of only NMOS type transistors in this way, CM
Compared with the case of using the OS type transistor, there is an effect that the charge / discharge current when the first switch circuit SW1 ′ is controlled can be reduced. However, as shown in FIG. 30, this type of switch circuit has difficulty in transmitting the high-side potential. Therefore, in the case where the next stage is a static inverter circuit, there is a problem that a through current flows, and conversely the current consumption increases. However, the dynamic latch circuit 93 shown in FIG. Like the amplification of the data line, a minute voltage is input as an input in a half cycle of the clock signal CLK, and the power supply switches PQ1 and NQ1 are turned on in the remaining half cycle of the clock signal CLK.
There is an effect that the captured minute voltage can be quickly converted into a CMOS-type high voltage.

(Fifteenth Embodiment) Next, a fifteenth embodiment of the present invention will be described with reference to FIGS. 31 and 32.

The present embodiment is applied to a half latch circuit as a semiconductor integrated circuit. In FIG. 31,
Reference numeral 100 denotes a first switch circuit including a PMOS transistor QP1 and 103 denotes an NMOS transistor QN1.
The second switch circuit 101 is a CMOS type inverter circuit including another PMOS type transistor QP3 and an NMOS type transistor QN3 arranged between the first and second switch circuits 100 and 103. The data signal IN is input to the gate electrode.

The first switch circuit 100 (PMOS
Type transistor QP1) has its gate electrode and source electrode connected to a differential signal wiring pair 90 for the first differential clock signals UCLK and UXCLK, and the second switch circuit 103 (NMOS type transistor QN1) has The gate electrode and the source electrode are the second differential clock signal LC
It is connected to the differential signal wiring pair 91 of LK and LXCLK.

The first and second switch circuits 100,
A first clocked inverter circuit 105 is configured by the 103 and the CMOS type inverter circuit 101. The half-latch circuit shown in FIG. 31 includes the first clocked inverter circuit 105 and the second clocked inverter circuit 106 having the same configuration as the first clocked inverter circuit 105 in order to separate or connect each stage forming the pipeline. The inverter circuit 102 is connected in a cascade connection with stages, and the output of the inverter circuit 102 is provided, and the output of the inverter circuit 102 is feedback-connected to the connection point of the clocked inverter circuits connected in the cascade connection.

In the half-latch circuit of this embodiment, the four switch circuits QP1, QN1, QP2, QN2 forming the two sets of clocked inverter circuits have the first and second differential clock signals UCLK, UXCLK, LCLK, L
It operates in synchronization with the potential change of XCLK.

FIG. 33 shows a conventional example of this embodiment. The circuit shown in the figure is the circuit disclosed in Japanese Patent Laid-Open No. 6-120782. This circuit divides a clock signal line into four lines in order to reduce charges charged and discharged by the clock signal, and synchronizes the signal of each signal line with the clock signal at an amplitude value of ½ of the power supply voltage. The charge and discharge charges are reused between the signal line pair UCLK and UXCLK that transitions from the power supply voltage to the intermediate potential and the signal line pair LCLK and LXCLK that transitions from the ground voltage to the intermediate potential. This reduces the power consumption required to generate the clock signal. However, the amplitude can only be limited to 1/2 of the power supply voltage,
And a change in the potential of the signal changes the switch circuits QP1, QN1, QP2, QN that form the clocked inverter circuit.
Since it is input only to the second gate electrode, there is a problem that the gain of the switch circuit is insufficient and the delay time becomes long.

On the other hand, in the present embodiment, the switch circuits QP1, QN1, QP composed of P-type and N-type MOS transistors forming the clocked inverter circuit.
2, the threshold voltage Vt of QN2 can be lowered by the potential difference between the first and second differential clock signals, so that if the gate voltage of the MOS transistor is Vg, the source voltage is Vs, and the threshold voltage is Vt. , The voltage (Vg-Vs-Vt) that determines the drive current of the MOS type transistor becomes large, and as a result, when compared with the same amplitude, a large current can flow and the operation speeds up, and the delay time increases. The effect that can be suppressed is produced. Therefore, when the same delay time is assumed, the amplitude voltage of the differential clock signal to be transmitted is the minute voltage dV, so that there is an effect that the power consumption can be reduced as compared with the conventional example of FIG. .

(Sixteenth Embodiment) Next, a sixteenth embodiment of the present invention will be described with reference to FIG.

This embodiment has a structure in which a circuit is added to the structure of the fifteenth embodiment shown in FIG. Less than,
Only the added configuration will be described.

In FIG. 34, reference numerals 120 and 121 denote the first and second source clock differential wiring pairs which run over the entire chip, and 12
Reference numeral 5 denotes two PMs for connecting and disconnecting the first source clock differential wiring pair 120 and the first clock differential wiring pair 90.
First switch circuit composed of OS type transistor, 12
Reference numeral 6 denotes two NMs for connecting and disconnecting the second source clock differential wiring pair 121 and the second clock differential wiring pair 91.
It is a second switch circuit including an OS transistor.

Further, 130 is a first connection circuit for fixing the two wirings forming the first clock differential wiring pair 90 to a predetermined potential and a ground potential, respectively, and 131 is a second clock differential wiring. It is a second connection circuit for fixing the two wirings forming the pair 91 to a predetermined potential and a ground potential, respectively.

The first connection circuit 130 connects one of the first clock differential wiring pair 90 (the wiring side of UXCLK) connected to the gate electrode of the PMOS transistor QP2 of the second clocked inverter circuit 106. NM to ground
A PMOS that connects the OS type transistor QN6 and the other side (UCLK wiring side) of the first clock differential wiring pair 90 connected to the source electrode of the PMOS type transistor QP2 of the second clocked inverter circuit 106 to a predetermined power supply.
Type transistor QP6.

Further, the second connection circuit 131 has a second
Of the second clock differential line pair 91 connected to the gate electrode of the NMOS type transistor QN2 of the clocked inverter circuit 106 of FIG. N which grounds the other side (wiring side of LXCLK) of the second clock differential wiring pair 90 connected to the source electrode of the NMOS transistor QN2 of the clocked inverter circuit 106
It is composed of a MOS transistor QN7.

Further, 140 is a control circuit for controlling the first and second switch circuits 125 and 126 and the first and second connection circuits 130 and 131. This control circuit 140 generates a control signal SL. This control signal SL
Is set to a high-level potential when the data input to the clocked inverter circuits 105 and 106 does not change over time or when there is no need to transfer data to the next stage. The control signal SL is input to each gate electrode of the first switch circuit (PMOS type transistor) 125, the NMOS type transistor QN6 of the first connection circuit 130, and the NMOS type transistor QN7 of the second connection circuit 131. . On the other hand, the control signal SL is inverted by the inverter circuit 141, and the inverted signal XSL is supplied to the second switch circuit (NMOS type transistor) 126,
The PMOS transistor QP of the first connection circuit 130
6 and each gate electrode of the PMOS type transistor QP7 of the second connection circuit 131.

Therefore, in this embodiment, when the data input of the clocked inverter circuits 105 and 106 does not change with the passage of time, or when it is not necessary to transfer the data to the next stage, the control circuit 140 outputs the data. Control signal SL
As a result, the first and second clock differential wiring pairs 90 and 91 are separated from the first and second source clock differential wiring pairs 120 and 121, respectively.

At this time, the P-type and N-type MOS transistors QP2 and Q of the second clocked inverter circuit 106 are used.
Both N2 are turned on, and the latched data is retained as it is.

[0204]

As described above, according to the present invention,
Since it is possible to provide a signal receiving circuit that can statically operate at high speed even if it is a differential signal of a small amplitude voltage, it is possible to transmit a differential signal of a small amplitude voltage and it is necessary to drive the signal to be transmitted. This has the effect of significantly reducing power consumption. Moreover, when the signal to be transmitted is a clock signal, the influence of the wiring resistance can be reduced without widening the wiring width of the clock signal as in the conventional case.
The problem of increased current consumption due to increased wiring capacitance can also be avoided. Therefore, according to the present invention, it is possible to provide a signal transmission circuit, a signal reception circuit, etc. that can realize low power consumption at low cost without increasing the chip area and using a special process, and the practical effect thereof is great.

[Brief description of drawings]

FIG. 1 is an overall schematic configuration diagram showing a first embodiment of the present invention.

FIG. 2 is a diagram showing a specific configuration of a driver circuit according to the first embodiment of the present invention.

FIG. 3 is a diagram showing a specific configuration of a receiver circuit according to the first and eighth embodiments of the present invention.

FIG. 4 is a diagram showing a specific configuration of a receiver circuit according to second and eighth embodiments of the present invention.

FIG. 5 is a diagram showing a specific configuration of a receiver circuit in the third, seventh, and eighth embodiments of the present invention.

FIG. 6 is a diagram showing a specific configuration of a receiver circuit according to fourth and eighth embodiments of the present invention.

FIG. 7 is a diagram showing a specific configuration of a receiver circuit according to fifth, seventh and eighth embodiments of the present invention.

FIG. 8 is an overall schematic configuration diagram showing a sixth embodiment of the present invention.

FIG. 9 is a diagram showing a specific configuration of a receiver circuit according to sixth and eighth embodiments of the present invention.

FIG. 10 is a diagram showing a specific configuration of another receiver circuit according to the sixth and eighth embodiments of the present invention.

FIG. 11 is a diagram showing a specific configuration of still another receiver circuit according to the sixth and eighth embodiments of the present invention.

FIG. 12A is a diagram showing a specific configuration of a first driver circuit according to a ninth embodiment of the present invention, and FIG. 12B is a specific configuration of a second driver circuit according to the same embodiment. FIG.

FIG. 13 is a diagram showing a timing chart of a receiver circuit according to a ninth embodiment of the invention.

FIG. 14 is a diagram showing a specific configuration of another driver circuit according to the ninth embodiment of the invention.

FIG. 15 is a diagram showing a specific configuration of still another driver circuit according to the ninth embodiment of the present invention.

FIG. 16 is a diagram showing a specific configuration of a receiver circuit according to a tenth embodiment of the present invention.

FIG. 17 is a diagram showing a timing chart of a receiver circuit according to a tenth embodiment of the present invention.

FIG. 18A is a diagram showing a specific internal configuration of an auxiliary receiver circuit according to the tenth embodiment of the present invention;
(B) is a figure which shows the modification of an auxiliary receiver circuit.

FIG. 19 is a diagram showing an overall schematic configuration of a semiconductor integrated circuit according to an eleventh embodiment of the present invention.

FIG. 20 is a diagram showing a specific configuration of a receiver circuit of a semiconductor integrated circuit according to an eleventh embodiment of the present invention.

FIG. 21 (a) is a diagram showing the overall structure of an eleventh embodiment of the present invention, and FIG. 21 (b) is a gate of two NMOS type transistors forming a part of a receiver circuit in the same embodiment. It is a figure which shows the difference of the voltage between sources.

FIG. 22 is a diagram showing an overall schematic configuration of another semiconductor integrated circuit in the eleventh embodiment of the present invention.

FIG. 23 is a diagram showing a specific configuration of a receiver circuit of another semiconductor integrated circuit according to the eleventh embodiment of the present invention.

FIG. 24 is a diagram showing a specific configuration of a semiconductor integrated circuit according to a twelfth embodiment of the present invention.

FIG. 25 is a diagram showing potential setting of a predetermined portion and threshold voltage setting of a predetermined transistor of the semiconductor integrated circuit in the twelfth and thirteenth embodiments of the present invention.

FIG. 26 is a diagram showing an overall schematic configuration of a semiconductor integrated circuit in a thirteenth embodiment of the present invention.

FIG. 27 is a diagram showing a specific configuration of a semiconductor integrated circuit according to a fourteenth embodiment of the present invention.

FIG. 28 is a diagram showing a timing chart of a semiconductor integrated circuit according to a fourteenth embodiment of the present invention.

FIG. 29 is a diagram showing a specific configuration of another semiconductor integrated circuit according to the fourteenth embodiment of the present invention.

FIG. 30 is a diagram showing a timing chart of a semiconductor integrated circuit according to a fourteenth embodiment of the present invention.

FIG. 31 is a diagram showing a specific configuration of a semiconductor integrated circuit according to a fifteenth embodiment of the present invention.

FIG. 32 is a diagram showing a timing chart of the semiconductor integrated circuit in the fifteenth embodiment of the present invention.

FIG. 33 is a diagram showing a specific configuration of a conventional semiconductor integrated circuit corresponding to the fifteenth embodiment of the present invention.

FIG. 34 is a diagram showing a specific configuration of a semiconductor integrated circuit according to a sixteenth embodiment of the present invention.

FIG. 35 (a) is a diagram showing the overall configuration of a conventional example, and (b).
Is a part of the receiver circuit in the conventional example 2
It is a figure which shows the difference of the gate-source voltage of each NMOS type transistor.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 Inverter 2 Driver circuit 3 Differential signal wiring pair 4 Receiver circuit (signal receiving circuit) D Differential signal generation part 10 and 11 Inverter circuit 10 '1st NMOS type inverter circuit 11' 2nd NMOS type inverter circuit 10a ' , 11a ′ Diode connection parts 13 and 13 ′ Flip-flop circuit N1 NMOS type transistor P1 PMOS type transistors 15a and 15b Capacitance P4 First switch circuit P3 Second switch circuit N5 NMOS type transistor (second
Switch circuit) N6 NMOS type transistor (first
Switch circuit) 22 first driver circuit 23 second driver circuit 27 first differential signal generator 28 second differential signal generator Vcc power supply Vss ground 40 third driver circuit U1, U2 first Differential signals L1 and L2 Second differential signal 52 Auxiliary receiver circuit (auxiliary receiving circuit) 72 Inverter circuit (control means) 82 Power line switch (first switch means) 83 Ground line switch (second switch means) 84 Logic part (circuit part) 85, 86 Output potential variable DC / DC converters QP1, QN1 Transistors V1, V2 Power supply lines SG1, SG2 Control signal SW1 First switch circuit SW2 Second switch circuit 90 First clock differential Wiring pair 91 Second clock differential wiring pair 93 Dynamic flip-flop circuit (latch circuit) 93a Lip-flop unit UCLK, UXCLK First differential clock signal LCLK, LXCLK Second differential clock signal PQ1 PMOS type transistor (first
Switch part) NQ1 NMOS type transistor (second
Switch unit of 100) second CMOS type inverter circuit 101 first CMOS type inverter circuit 102 inverter circuit 105 first clocked inverter circuit 106 second clocked inverter circuit IN data signal QP3 PMOS type transistor NP3 NMOS type transistor 120 first source clock differential wiring pair 121 second source clock differential wiring pair 125 first switch circuit 126 second switch circuit 130, 131 connection circuit 140 control circuit

─────────────────────────────────────────────────── ─── Continuation of the front page (58) Fields surveyed (Int.Cl. ⁷ , DB name) H03K 19/0175 G06F 3/00 H03K 19/0948 H04L 25/02

Claims (73)

(57) [Claims] 1. A signal transmission circuit for transmitting a signal to a signal reception circuit, wherein the signal is represented by a differential signal composed of two signals whose potential transition directions are opposite to each other, and A differential signal generating unit that uses one of the potentials as the potential of the power supply of the signal receiving circuit; and a wiring pair that differentially transmits the differential signal generated by the differential signal generating unit. Signal transmission circuit. 2. A signal receiving circuit including a transistor, wherein the signal receiving circuit receives a differential signal composed of two signals whose potential transition directions are opposite to each other, and the differential signal The signal receiving circuit is characterized in that the potentials of at least two electrodes of a source electrode, a gate electrode and a substrate electrode in the transistor change in synchronization with the change of the above. 3. A signal to be transmitted is represented by a differential signal composed of two signals whose potential transition directions are opposite to each other,
And a differential signal generator that uses one of the potentials of the differential signal as the potential of the power supply of the signal receiving circuit, and a wire pair to which the differential signal generated by the differential signal generator is differentially transmitted. A signal receiving circuit including a transistor, wherein the signal receiving circuit receives a differential signal transmitted to the wiring pair, and a source electrode and a gate in the transistor in synchronization with a change in the differential signal. A signal transmission / reception circuit characterized in that the potentials of at least two electrodes of an electrode and a substrate electrode are changed. 4. The transistor is turned on when one of the differential signals rises in potential and the other of the differential signals falls in potential, while the other of the differential signals rises in potential and the differential signal is generated. When the potential of the other signal drops, the transistor is turned on.
The signal receiving circuit or the signal transmitting / receiving circuit according to claim 2 or 3, wherein FF is performed. 5. The signal transmission circuit or signal transmission / reception circuit according to claim 1, wherein the signal to be transmitted is a clock signal. 6. The differential signal generator inputs a signal having a first amplitude voltage and converts the signal into a differential signal having a second amplitude voltage smaller than the first amplitude voltage. The signal transmission circuit or the signal transmission / reception circuit according to claim 1 or 3. 7. The differential signal generator includes an inverter that inverts a signal having the first amplitude voltage, and two output terminals that receive the signal and the inverted signal from the inverter and that form a pair. A first and a second push-pull circuit connected to the first push-pull circuit, the first push-pull circuit being connected to a first power supply terminal having a predetermined potential, and when the signal is at the “H” level. One of the output terminals is connected to the first power terminal,
When the inverted signal from the inverter is at "H" level, the other of the output terminals is connected to the first power supply terminal, and the second push-pull circuit is configured such that the predetermined potential is equal to the second amplitude voltage. It is connected to a second power supply terminal of a different potential, and the other of the output terminals is connected to the second power supply terminal when the signal is at "H" level, and the inverted signal from the inverter is "H". 7. The signal transmission circuit or the signal transmission / reception circuit according to claim 6, wherein one of the output terminals is connected to the second power supply terminal at the "level". 8. The signal receiving circuit includes a flip-flop circuit formed by flip-flop connecting two inverter circuits, and the flip-flop circuit is configured in synchronization with a change in the received differential signal. 4. The signal receiving circuit according to claim 2, wherein at least two electrode pairs of a source electrode pair, a gate electrode pair and a substrate electrode pair in one transistor pair between the inverter circuits change. Or a signal transmitting / receiving circuit. 9. The differential signal is received via a differential signal wiring pair made up of two signal lines, and the flip-flop circuit includes first and second NMOS type transistors and PMOS type transistors, respectively. Two CMOS-type inverter circuits are flip-flop connected, and the source signal pair of the NMOS-type transistor pair is independently connected to the differential signal wiring pair between the first and second CMOS-type inverter circuits. 9. The signal receiving circuit or the signal transmitting / receiving circuit according to claim 8, wherein 10. In the first CMOS type inverter circuit, drain electrodes of an NMOS type transistor and a PMOS type transistor are commonly connected, and the NMOS
The source electrode of the MOS transistor is connected to one of the pair of differential signal lines, the source electrode of the PMOS transistor is connected to the power supply of the signal receiving circuit via the first switch circuit, and the first switch circuit is The other of the differential signal wiring pair is connected to the gate electrode to control the current driving capability, and in the second CMOS type inverter circuit, the drain electrodes of the NMOS type transistor and the PMOS type transistor are commonly connected, and A source electrode of the NMOS transistor is connected to the other of the differential signal wiring pair, a source electrode of the PMOS transistor is connected to a power source of the signal receiving circuit via a second switch circuit, and the second switch is connected. In the circuit, one of the differential signal wiring pair is connected to its gate electrode to control the current drive capability. Signal receiving circuit or the signal transmitting and receiving circuit according to claim 9 wherein the symptoms. 11. In the first CMOS inverter circuit, the source electrode of any transistor is connected to one of the differential signal line pairs, and the gate electrode of the transistor is connected to the differential signal line pair via a capacitor. The second CMOS inverter circuit, the source electrode of one of the transistors is connected to the other of the differential signal wiring pair, and the gate electrode of the transistor is connected to the other of the differential signal wiring pair via the other capacitance. The signal receiving circuit or the signal transmitting / receiving circuit according to claim 9, wherein the signal receiving circuit or the signal transmitting / receiving circuit is connected to one of the dynamic signal wiring pairs. 12. A first structure each comprising a transistor
And a second switch circuit, wherein the first switch circuit is disposed between one of the differential signal wiring pair and a ground line, and the gate electrode of the first switch circuit is the second switch circuit.
Connected to the source electrode of the PMOS type transistor of the CMOS type inverter circuit, the second switch circuit is arranged between the other of the differential signal wiring pair and the ground line, and the gate electrode thereof is the first electrode.
10. The signal receiving circuit or the signal transmitting / receiving circuit according to claim 9, which is connected to a source electrode of a PMOS type transistor of the CMOS type inverter circuit. 13. An NMOS transistor pair is separately provided, and the NMOS transistor pair has a source electrode pair commonly connected to a ground line, and a gate electrode pair and a drain electrode pair cross-coupled to each other. The signal receiving circuit or the signal transmitting / receiving circuit according to claim 9, wherein a gate electrode pair and a drain electrode pair are connected to the differential signal wiring pair, respectively. 14. The signal receiving circuit is a flip-flop.
Comprising a flop circuits, the flip-flop circuit, the first and second NMOS inverter circuit is constructed by flip-flop connected, each NMOS inverter circuit, the load transistor and the other NMOS transistor of NMOS type A load transistor of each of the NMOS type inverter circuits has a diode connecting portion connecting a gate electrode and a drain electrode thereof, and a load transistor of the other NMOS type is provided between the first and second NMOS type inverter circuits. The signal receiving circuit or the signal transmitting / receiving circuit according to claim 2, wherein the source electrode pair of the transistor pair is connected to the differential signal wiring pair. 15. In the first NMOS type inverter circuit, the source electrode of the NMOS type load transistor and the drain electrode of the other NMOS type transistor are connected, and the source electrode of the other NMOS type transistor is a differential signal line. Connected to one of the pair, the diode connection part of the load transistor is connected to the power supply of the signal receiving circuit via the first switch circuit, and the first switch circuit has the gate electrode of the differential signal wiring pair. Of the other NMO is connected to the source electrode of the NMOS type load transistor and the drain electrode of the other NMOS type transistor in the second NMOS type inverter circuit.
The source electrode of the S-type transistor is connected to the other of the differential signal wiring pair, the diode connection portion of the load transistor is connected to the power supply of the signal receiving circuit via a second switch circuit, and the second switch 15. The signal receiving circuit or the signal transmitting / receiving circuit according to claim 14, wherein one of the pair of differential signal wirings is connected to the gate electrode of the circuit to control the current driving capability. 16. A signal to be transmitted is a differential signal which is composed of two signals whose potential transition directions are opposite to each other and one of the two signals has a potential of a power supply of a signal receiving circuit. A signal transmission method characterized by transmitting. 17. The signal transmission method according to claim 16, wherein the differential signal is a differential signal of a minute amplitude voltage smaller than the potential difference between the power supply potential of the signal receiving circuit and the ground potential. . 18. The signal transmission method according to claim 16, wherein the signal to be transmitted is a clock signal. 19. A signal having a first amplitude voltage is input, and the input signal is a second amplitude voltage that is smaller than the first amplitude voltage and that is based on a potential of a power supply of a signal receiving circuit. 17. The signal transmission method according to claim 16, wherein the signal is converted into a differential signal and the differential signal is transmitted. 20. A signal, characterized in that any two electrodes of a source electrode, a gate electrode and a substrate electrode of a transistor receive a differential signal composed of two signals whose potentials transition directions are opposite to each other. Receiving method. 21. In synchronization with the change of the differential signal, two or more of a source electrode pair, a gate electrode pair, and a substrate electrode pair of a transistor pair between two inverter circuits forming a flip-flop circuit. 21. The signal receiving method according to claim 20, wherein the potential of the electrode is changed to receive the differential signal. 22. A signal to be transmitted is a differential signal composed of two signals whose potential transition directions are opposite to each other, and one of the two signals is the potential of the power supply of the signal receiving circuit, A method of transmitting and receiving a signal, comprising transmitting and receiving the transmitted differential signal at any two electrodes of a source electrode, a gate electrode and a substrate electrode of a transistor. 23. A signal transmission circuit for transmitting a signal to a signal reception circuit, wherein the signal is expressed by a differential signal composed of two signals whose potential transition directions are opposite to each other, and A first differential signal generator that uses one of the potentials as a power source potential of the signal receiving circuit; and the signal is expressed by the differential signal, and one of the differential signals is ground potential. And a pair of wirings for differentially transmitting both of the differential signals generated by the first and second differential signal generation sections. Signal transmission circuit. 24. The first and second differential signal generators receive a signal having a first amplitude voltage, and the first differential signal generator is more than the first amplitude voltage. Generating a differential signal having a second amplitude voltage smaller than the first amplitude voltage, wherein the second differential signal generating unit generates a differential signal having a third amplitude voltage smaller than the first amplitude voltage. The signal transmission circuit according to claim 23. 25. The first differential signal generator is a PMO.
A push-pull circuit including an S-type transistor and connected to two power sources having a potential difference equal to the second amplitude voltage; and the second differential signal generation unit including an NMOS-type transistor and the third 25. The signal transmission circuit according to claim 24, further comprising a push-pull circuit connected to two power sources having a potential difference equal to the amplitude voltage. 26. The first and second differential signal generators are connected in series between a power supply and a ground line, and the first differential signal generator and the second differential signal generator are provided. The resistor is arranged between the two.
The signal transmission circuit described. 27. The first and second differential signal generators are connected in series between a power supply and a ground line, and the first differential signal generator and the second differential signal generator are provided. A third differential signal generation unit having the same configuration as the first or second differential signal generation unit is disposed between them, and a differential signal is transmitted to the third differential signal generation unit. 24. The signal transmission circuit according to claim 23, wherein a capacitance smaller than the stray capacitance of the wiring is connected. 28. A first differential signal of a small amplitude voltage based on a voltage in the vicinity of the potential of the predetermined power supply of the predetermined power supply and the ground power supply of the signal receiving circuit, and a voltage in the vicinity of the potential of the ground power supply. And a second differential signal having a small amplitude voltage as a sole input, and statically interlocked with an electrical change of the first and second differential signals to obtain the first and second differential signals. A signal receiving circuit, which generates a third amplitude voltage larger than the amplitude voltage of the signal. 29. The signal receiving circuit includes a flip-flop circuit, and the flip-flop circuit includes first and second CMOSs.
Type inverter circuits are flip-flop connected, and each of the first and second CMOS type inverter circuits is composed of an NMOS type transistor and a PMOS type transistor in which drain electrodes are commonly connected to each other. NMO of the second CMOS type inverter circuit
One of the first and second differential signals is input to the source electrode pair of the S-type transistor, and the PMO of the first and second CMOS inverter circuits is input.
29. The signal receiving circuit according to claim 28, wherein the other one of the first and second differential signals is input to the source electrode pair of the S-type transistor. 30. A second differential signal is input to the source electrode pair of the NMOS transistors of the first and second CMOS inverter circuits, and the PMO of the first and second CMOS inverter circuits is input.
30. The signal receiving circuit according to claim 29, wherein the first differential signal is input to the source electrode pair of the S-type transistor. 31. The first and second differential signals are input via the first and second differential signal wiring pairs, respectively, and each transistor pair between the first and second CMOS type inverter circuits is , The gate electrode pair is connected to one of the first and second differential signal wiring pairs via capacitors, and the connection relationship between the gate electrode pair of each transistor pair and the differential signal wiring pair is: 30. The signal receiving circuit according to claim 29, wherein each is a cross-coupled connection via the capacitor. 32. The signal receiving circuit comprises a flip-flop circuit, and the flip-flop circuit includes first and second NMOSs.
Type inverter circuits are flip-flop connected, and the first and second NMOS type inverter circuits each include an NMOS type load transistor and another NMOS type transistor, and each load transistor has its gate electrode Each of the other NMOS type transistors has a diode connection part commonly connected to a drain electrode, and the drain electrode of each of the other NMOS type transistors is connected to a source electrode of a load transistor of its own inverter circuit, and the first and second NMOS type transistors are connected. A second differential signal is input to the source electrode pair of another NMOS type transistor pair between the inverter circuits, and the second differential signal is input to the drain electrode pair of the load transistor pair between the first and second NMOS type inverter circuits. 29. The signal receiving circuit according to claim 28, wherein the first differential signal is input. 33. Between inverter circuits forming a flip-flop circuit, a transistor pair having a source electrode pair connected to a differential signal wiring pair has a substrate electrode pair cross-coupled to the differential signal wiring pair. 30. The signal receiving circuit according to claim 14, wherein: 34. A flip-flop circuit is formed on the surface of a chip having a plurality of transistors formed on the surface thereof, and a load transistor of an inverter circuit constituting the flip-flop circuit has a threshold voltage of 30. The signal according to claim 14, which is set to a voltage value smaller than threshold voltages of other transistors forming a flip-flop circuit and a plurality of other transistors formed on the surface of the chip. Receiver circuit. 35. A signal receiving circuit comprises first and second flip-flop circuits and an auxiliary receiving circuit having four sets of inverter circuits, and each of the first and second flip-flop circuits comprises 2
The diode load type inverter circuit is flip-flop connected, and one of the complementary output potentials is the power supply potential or the ground potential, and the other does not reach the original ground potential or the power supply potential, and the auxiliary receiving circuit 30. The signal according to claim 29, wherein said complementary outputs are respectively received from said first and second flip-flop circuits, and complementary outputs of a power supply potential and a ground potential are output based on these four outputs. Receiver circuit. 36. The first flip-flop circuit comprises:
The first and second NMOS type inverter circuits are flip-flop connected, and each of the first and second NMOS type inverter circuits includes an NMOS type load transistor and another NMOS type transistor. The load transistor has a diode connection part in which its gate electrode and drain electrode are commonly connected,
The drain electrode of the type transistor is connected to the source electrode of the load transistor, and the first and second N-type transistors are connected.
Another NMOS is provided between the MOS inverter circuits.
A second differential signal is input to the source electrode pair of the pair of transistor transistors, and a first differential signal is input to the drain electrode pair of the load transistor pair, and the second flip-flop circuit is 1st and 2nd P
The MOS type inverter circuit is formed by flip-flop connection, and the first and second PMOS type inverter circuits are
Each is a PMOS type load transistor and another PMOS
Type transistor, and the load transistor is
The other PMOS type transistor has a diode connection part in which the gate electrode and the drain electrode are commonly connected, and the drain electrode of the other PMOS type transistor is connected to the source electrode of the load transistor, and the first and second PMOS type inverters are provided. Between the circuits, the first differential signal is input to the source electrode pair of the other PMOS transistor pair, while the second differential signal is input to the drain electrode pair of the load transistor pair. 36. The method according to claim 35, wherein
The signal receiving circuit described. 37. In the auxiliary receiving circuit, the four sets of inverter circuits are four sets of CMOS type inverter circuits, and the two sets of CMOS type inverter circuits have respective outputs commonly connected to each other. , One of the first differential signal and one of the second differential signal are used as a power supply and a ground power supply, and one of complementary outputs of the first flip-flop circuit and complementary of the second flip-flop circuit One of the outputs is input, and the other two sets of CMOS type inverter circuits have their outputs connected in common and receive the other of the first differential signal and the other of the second differential signals, respectively. 36. A power supply and a ground power supply, and the other complementary output of the first flip-flop circuit and the other complementary output of the second flip-flop circuit are input. Or 36
The signal receiving circuit described. 38. In the auxiliary receiving circuit, the four sets of inverter circuits include one set including an NMOS type inverter circuit and a PMOS type inverter circuit, and another set including another NMOS type inverter circuit and another PMOS type inverter circuit. And the pair of NMOS-type and PMOS-type inverter circuits are configured as a series circuit connected in series with each other, and the series connection point serves as an output terminal, and the first and second One of the differential signals is used as the power source and the ground power source of the series circuit,
Further, one of the outputs of the first and second flip-flop circuits is input to the gate electrode, respectively, and the other set of both NMOS type and PMOS type inverter circuits is configured as a series circuit connected in series with each other. Is
The series connection point is used as another output terminal, and the other of the first and second differential signals is used as a power source and a ground power source of the series circuit, and further, the outputs of the first and second flip-flop circuits, respectively. The signal receiving circuit according to claim 35 or 36, wherein the other is input to the gate electrode. 39. A second amplitude voltage inputting a signal having a first amplitude voltage, the input signal being smaller than the first amplitude voltage and having a reference near a potential of a power supply of the signal receiving circuit. While converting the input signal into a differential signal of a third amplitude voltage that is smaller than the first amplitude voltage and has a reference near the ground potential, 17. The signal transmission method according to claim 16, wherein both differential signals of the amplitude voltage of 3 are transmitted. 40. A first differential signal of a small amplitude voltage based on a voltage in the vicinity of the potential of the predetermined power supply of the predetermined power supply and the ground power supply of the signal receiving circuit, and a voltage in the vicinity of the potential of the ground power supply. And a second differential signal having a small amplitude voltage as a sole input, and statically interlocked with an electrical change of the first and second differential signals to obtain the first and second differential signals. A signal receiving method characterized by outputting a third amplitude voltage larger than the above amplitude voltage. 41. A signal having a first amplitude voltage is input, and the input signal is a differential signal composed of two signals whose potential transition directions are opposite to each other. A second amplitude voltage smaller than the amplitude voltage, further converting one of the potentials of the differential signal into a differential signal in the vicinity of the potential of the power supply of the signal receiving circuit; A differential signal having a third amplitude voltage smaller than the first amplitude voltage, and further converting one potential of the differential signals into a differential signal in the vicinity of a ground potential, Transmitting both differential signals of the second and third amplitude voltages, and thereafter, using the transmitted both differential signals as a sole input,
A signal transmission / reception characterized in that a signal having a fourth amplitude voltage larger than the second and third amplitude voltages of the both differential signals is output statically linked to the electrical change of the both differential signals. Method. 42. The signal receiving circuit comprises an inverter circuit having a transistor, and the inverter circuit receives a differential signal on two electrodes of a source electrode, a gate electrode and a substrate electrode of the transistor, and receives the differential signal. 4. The signal receiving circuit according to claim 2, wherein the potentials of the two electrodes change in synchronization with the change of the differential signal. 43. The differential signals to be received are a first differential signal of a small amplitude voltage near the potential of the power supply of the signal receiving circuit and a second differential signal of a small amplitude voltage near the ground potential, The inverter circuit includes two transistors connected in series, and the one transistor receives the first differential signal at two electrodes of a source electrode, a gate electrode and a substrate electrode thereof, and the other transistor is the other transistor. 43. The signal receiving circuit according to claim 42, wherein two of the source electrode, the gate electrode and the substrate electrode receive the second differential signal. 44. The inverter circuit comprises a CMOS type inverter circuit having a series circuit in which both PMOS type and NMOS type transistors are connected in series, and the series connection point serves as an output terminal. The signal according to claim 43, wherein the first differential signal is input to a source electrode and a gate electrode, and the second differential signal is input to a source electrode and a gate electrode of the NMOS transistor. Receiver circuit. 45. The signal receiving circuit according to claim 43, wherein amplitude voltages of the first and second differential signals are each smaller than a half value of a voltage of a power supply of the signal receiving circuit. 46. A source electrode of a transistor forming an inverter circuit which is a signal receiving circuit,
21. The signal receiving method according to claim 20, wherein the signal is input to two or more electrodes of the gate electrode and the substrate electrode to change the potentials of the two or more electrodes in synchronization with the differential signal. 47. An inverter circuit, which is a signal receiving circuit, includes two transistors, and a first differential signal at a potential near a potential of a power source of the signal receiving circuit is supplied to a source electrode of one transistor of the inverter circuit. , A gate electrode and a substrate electrode, and inputs a second differential signal at a potential near the ground potential to the source electrode, the gate electrode and the substrate electrode of the other transistor of the inverter circuit. 21. The signal receiving method according to claim 20, wherein two or more electrodes are input to receive the information indicated by the first and second differential signals. 48. The amplitude voltage of each of the first and second differential signals is set to a minute amplitude voltage that is smaller than the potential difference between the power supply and the ground potential of the signal receiving circuit. The signal receiving method described. 49. After receiving the information represented by the first and second differential signals, a detection signal of an amplitude voltage equal to the potential difference between the potential of the power supply of the signal receiving circuit and the ground potential is output according to this information. The signal receiving method according to claim 47, wherein: 50. A semiconductor integrated circuit comprising: a switch unit connected to a power supply line; and a circuit unit that receives power from the power supply line via the switch unit by the switch unit. A semiconductor integrated circuit comprising a potential control means for controlling the potential of the power supply line when power is supplied to the circuit portion from a line and when the power supply is stopped. 51. The power supply from the power supply line to the circuit unit is stopped by the switch unit when the circuit unit changes from an activated state to an inactivated state, and the potential control unit is the switch unit. 51. The semiconductor integrated circuit according to claim 50, wherein the potential of the power supply line is controlled so as to bring the switch means into a higher impedance state when the power supply to the circuit section is stopped by. 52. The switch means is composed of a transistor, and the transistor has a source electrode connected to the power supply line, a drain electrode connected to the circuit portion, and a gate electrode connected to a control line for controlling a gate voltage. 52. The semiconductor integrated circuit according to claim 50 or 51, wherein: 53. The potential control means controls the potential of the power supply line and the potential of the control line for controlling the gate voltage when the power supply to the circuit section is stopped by the switch means. 53. The semiconductor integrated circuit according to claim 52, wherein the potential of the power supply line is changed in the opposite direction. 54. The potential control means controls the potential of the power supply line and the potential of the control line for controlling the gate voltage when the power supply to the circuit portion is stopped by the switch means. 53. The semiconductor integrated circuit according to claim 52, wherein the transistor is further transited to a high impedance state and the potential at the transition reaching point is changed to a potential exceeding the potential of the source electrode of the transistor. 55. The switch means comprises a transistor, and the threshold voltage of the transistor is set to a voltage value equal to or lower than the threshold voltage of the transistor forming the circuit section. The semiconductor integrated circuit according to 50 or 51. 56. The switch means comprises a switch means arranged between a power supply line having a predetermined potential and the circuit section, and a switch means arranged between a power supply line having a ground potential and the circuit section. Claim 50 or 5 characterized by
1. The semiconductor integrated circuit according to 1. 57. A power supply line, a circuit section, and switch means connected to the power supply line and the circuit section are provided, and power is supplied from the power supply line to the circuit section through the switch means by the switch means. In the semiconductor integrated circuit thus configured, the potential of the power supply line is changed when power is supplied from the power supply line to the circuit section by the switch means and when the power supply is stopped. Circuit control method. 58. The potential of the power supply line is changed so as to bring the switch means into a higher impedance state when the power supply to the circuit portion is stopped by the switch means. Item 57. A method for controlling a semiconductor integrated circuit according to Item 57. 59. The switch means is composed of a transistor, and when the power supply to the circuit portion is stopped by the switch means, the gate electrode of the transistor is changed in a direction opposite to the direction of change of the potential of the power supply line. 59. The method for controlling a semiconductor integrated circuit according to claim 58, wherein: 60. A pipeline structure in which a logic circuit or an arithmetic circuit is divided into a plurality of stages in the direction of the processing order and divided into a plurality of stages, and a switch circuit and a latch circuit are arranged between the respective stages. In the semiconductor integrated circuit, a first and second clock differential wiring pair for transmitting first and second differential clock signals each of which is lower than a power supply voltage, and the first and second clock differential wiring pairs arranged in each of the stages. Control means for receiving the first and second differential clock signals of the two differential wiring pairs to generate another clock signal, and controlling the switch circuit of the corresponding stage by the other clock signal. A semiconductor integrated circuit characterized by the above. 61. The first differential clock signal is a small amplitude voltage differential signal with reference to a power supply potential, and the second differential clock signal is a small amplitude voltage with reference to a ground potential. 7. The differential signal according to claim 6,
0 of the semiconductor integrated circuit. 62. The control means comprises a CMOS type inverter circuit having a PMOS transistor and an NMOS transistor having drain electrodes connected to each other, wherein the PMOS transistor has a source electrode and a gate electrode having the first difference. A dynamic clock signal is input to the NMOS type transistor, the second differential clock signal is input to a source electrode and a gate electrode of the NMOS type transistor, and both the PMOS type and NMOS type drain electrodes are used as output terminals. 62. The semiconductor integrated circuit according to claim 61, wherein the other clock signal is output from 63. The latch circuit in each stage is configured by a dynamic flip-flop circuit, and the dynamic flip-flop circuit is arranged between a flip-flop section and a power supply line and the flip-flop section. 62. The semiconductor integrated circuit according to claim 61, further comprising a first switch section and a second switch section arranged between a ground line and the flip-flop section. 64. The first switch unit is composed of a PMOS transistor, and the second switch unit is N-type.
A gate electrode and a source electrode of the PMOS transistor, which are connected to the first clock differential wiring pair;
The drain electrode is connected to the flip-flop unit, the NMOS transistor has a gate electrode and a source electrode connected to the second clock differential wiring pair,
64. The semiconductor integrated circuit according to claim 63, wherein the drain electrode is connected to the flip-flop section. 65. A semiconductor integrated circuit having a pipeline structure, which has a plurality of stages obtained by dividing a logic circuit or an arithmetic circuit into a plurality of processing directions and a switch circuit and a latch circuit are arranged between the respective stages. In, a first differential clock signal whose reference is the power supply potential and a second differential clock signal whose reference is the ground potential are input to generate a clock signal whose amplitude voltage is the power supply potential, A method for controlling a semiconductor integrated circuit, comprising controlling the switch circuits at the respective stages based on the generated clock signal. 66. The power supply to the latch circuit is cut off in the first half cycle of the generated clock signal,
Data is taken into the latch circuit via the switch circuit, and in the latter half cycle of the clock signal, the switch circuit is closed to prevent the next data from being taken into the latch circuit, and power is supplied to the latch circuit. 66. The method of controlling a semiconductor integrated circuit according to claim 65, wherein the fetched data is output. 67. An inverter circuit for inputting data, inverting the data, and outputting the data; a first switch circuit arranged between the inverter circuit and a power supply line; and the inverter circuit and a ground line. A semiconductor integrated circuit comprising a clocked inverter circuit having a second switch circuit arranged between them, one of which serves as a power supply line and which comprises two signals whose potential transition directions are opposite directions. A wiring pair of a first differential clock signal and a wiring pair of a second differential clock signal, the other of which serves also as a ground line, wherein the first switch circuit is the first differential clock signal wiring. Connected to a pair and controlled by a first differential clock signal, and the second switch circuit connected to the second differential clock signal wiring pair and controlled by a second differential clock signal To Semiconductor integrated circuit to be butterflies. 68. The first switch circuit is a PMOS.
68. The semiconductor integrated circuit according to claim 67, comprising a type transistor, the gate electrode and the source electrode of which are connected to the first differential clock signal wiring pair. 69. The second switch circuit is an NMOS
68. The semiconductor integrated circuit according to claim 67, comprising a type transistor, the gate electrode and source electrode of which are connected to the second differential clock signal wiring pair. 70. Two clocked inverter circuits according to claim 67 are cascade-connected, and an inverter circuit for receiving and inverting the output of the clocked inverter circuit of the latter stage is provided, and the output of the inverter circuit is the A semiconductor integrated circuit comprising a half-latch circuit fed back to a vertically connected node of two clocked inverter circuits. 71. A first and a second source clock differential wiring pair running over the entire chip, a first and a second source clock differential wiring pair, and a first and a second clock differential wiring pair. A first and a second switch circuit respectively disposed between the first clock differential wiring pair and a power supply connected to one of the first clock differential wiring pair and grounding the other, and the second clock differential wiring pair. 71. A connection circuit for grounding one of them and connecting a power supply to the other thereof; and a control circuit for controlling the first and second switch circuits and the connection circuit.
The semiconductor integrated circuit described. 72. The control circuit controls the first and second switch circuits so as to separate the first and second clock differential wiring pairs from the source clock differential wiring pair. One of the clock differential wiring pair is connected to a power supply and the other is grounded, and one of the second clock differential wiring pair is grounded and the other is connected to a power supply, and the connection circuit is controlled. The semiconductor integrated circuit according to claim 71, wherein: 73. The control circuit comprises: a first and a second control circuit when the content of the data input to the clocked inverter circuit does not change with the passage of time and when it is not necessary to transfer the data to the next stage. 73. The semiconductor integrated circuit according to claim 72, which controls two switch circuits and the connection circuit.