JP3454252B2 - Electro-optical device - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a technical field of an electro-optical device of an active matrix driving system, and particularly, a thin film transistor for pixel switching.
sistor: hereinafter, appropriately referred to as TFT) is provided in a laminated structure on a substrate, and a light-shielding film for incident light is provided on the upper side of the TFT which is preferably used for a projector and the like and on the lower side of the TFT. This belongs to the technical field of electro-optical devices of the type in which a light shielding film for returning light is provided.

[0002]

2. Description of the Related Art Conventionally, in an electro-optical device such as a liquid crystal device of an active matrix driving system driven by TFT,
When the scanning signal is supplied to the gate electrode of the TFT via the scanning line, the TFT is turned on, and the image signal supplied to the source region of the semiconductor layer via the data line is applied to the TFT.
Is supplied to the pixel electrode via the source / drain of.
When light is incident on at least a part of a channel region of a semiconductor layer forming such a TFT or a junction region between the channel region and a source / drain and at least a source / drain adjacent thereto, photoexcitation occurs, and the transistor characteristics of the TFT. Changes, for example, so that the leak current in the off state increases. Therefore, in order to prevent the characteristic change of the TFT due to such incident light, for example, in the case of an electro-optical device of a type in which particularly strong incident light is incident, such as a transmissive electro-optical device for projector use. On the incident side of the projected light, a light-shielding film is provided on the counter substrate so as to cover the gap region between the pixel electrodes including the channel region of the TFT, or an opaque data line made of an Al film or the like is formed wide to form a channel. It covers the area. Furthermore, on the output side, by providing a light-shielding film below the TFT,
The back-reflected light and return light such as projected light penetrating the combined optical system from other electro-optical devices when a plurality of electro-optical devices are combined to form a projector are blocked.

[0003]

In the electro-optical device of this type, there is a strong general demand for improving the quality of a display image. For this reason, in each pixel, a non-pixel opening region through which display light does not pass is provided. On the other hand, by widening the pixel aperture region through which the display light is transmitted, the pixel pitch is made finer and the pixel aperture ratio is increased, and at the same time, as described above, the channel region of the TFT or a region adjacent to the channel region (hereinafter Referred to as a channel adjacent region), for example, T of LDD structure
It is extremely important to sufficiently shield the incident light and the reflected light in the low concentration region of FT. That is, as the pixel pitch is made finer, a slight change in the characteristics of the TFT leads to a great deterioration in image quality.

However, the higher the pixel aperture ratio, the smaller the total area of the plane where the light-shielding film or the film having the light-shielding function can be arranged. Therefore, it becomes more difficult to completely shield the TFT. There is. Furthermore, as the pixel pitch becomes finer, even incident light or reflected light slightly inclined with respect to the substrate surface will eventually undergo multiple reflection in the laminated structure after being obliquely incident, and finally the channel region There is also a problem that it enters the channel adjacent region. In particular, when the incident light side is covered with a data line made of an Al film having an extremely high reflectance, the wider the data line is, the closer the light blocking to the incident light becomes, but the wider the data line is. , The reflected light is reflected on the side of the data line facing the TFT, or is subsequently reflected on the side of the light shielding film below the TFT facing the TFT, and finally illuminates the channel region or the channel adjacent region. There is a problem that it is difficult to solve that the possibility of doing so increases. Further, the wider the width of the light-shielding film below the TFT, the closer the light-shielding to the reflected light becomes. There is also a difficult problem to be solved in that the possibility of finally irradiating the channel region or the channel adjacent region is increased due to the reflection or the subsequent reflection on the inner surface of the data line. In particular, in the case of an electro-optical device for a projector in which the intensity of incident light or reflected light per unit area is extremely high, such a problem is extremely serious in improving the image quality.

The present invention has been made in view of the above problems, and the change in characteristics of the pixel switching TFT due to incident light or reflected light is reduced while increasing the pixel aperture ratio.
An object of the present invention is to provide an electro-optical device capable of displaying high-quality images.

[0006]

(1) In order to solve the above-mentioned problems, the electro-optical device of the present invention has a scanning line on a substrate,
The data lines intersecting the scanning lines, a thin film transistor provided corresponding to intersections of the data lines and the scanning lines, an electro-optical device having a pixel electrode provided corresponding to the thin film transistor, wherein A scanning line is disposed on the channel region of the thin film transistor via a gate insulating film, and the light-shielding conductive film forming the capacitive electrode of the storage capacitor covers at least the channel region of the thin film transistor and the scanning line. Is arranged above the data line and below the data line.
The data line is made of a light-shielding conductive film,
It is characterized in that it is arranged so as to cover the channel region .

According to this structure of the present invention, the gate insulating film, the scanning line, and the shield are formed on the channel region formed on the substrate.
Light conductive film are laminated in this order. In such a stacked structure, the channel region can be shielded from light by the light-shielding conductive film. Further, since the conductive film also functions as a capacitance electrode of the storage capacitor, it is possible to sufficiently shield the channel region and construct the storage capacitor with a laminated structure having a relatively small number of layers. In addition, the data line
Can further enhance the light shielding effect of the channel region.
Wear.

(2) In one aspect of the first electro-optical device of the present invention, the conductive film includes a channel region of the thin film transistor, a junction region between the source / drain region of the thin film transistor and the channel region, and the junction. It is characterized in that at least a part of the source / drain region adjacent to the region is covered.

According to this structure of the present invention, not only the channel region but also the junction region between the source / drain region and the channel region and at least a part of the source / drain region adjacent to the junction region are covered with the conductive film. Therefore, it is possible to shield the incident light even in a low concentration region in the thin film transistor having the LDD structure, and it is possible to further reduce the characteristic change of the thin film transistor.

In another aspect of the first electro-optical device of the present invention, the storage capacitor electrically connects the first conductive film forming one capacitance electrode, the semiconductor layer forming the drain region, and the pixel electrode. The conductive film is formed of a second conductive film that is connected to and forms the other capacitive electrode of the storage capacitor, and the conductive film is the first conductive film.
It is characterized by being at least one of a conductive film and the second conductive film .

According to this structure of the present invention, the second conductive film serving as the other electrode of the storage capacitor also functions as a conductive film for relaying the drain region and the pixel electrode.
It is possible to prevent the penetration of etching due to the opening of the contact hole for connecting the pixel electrode and the drain region. That is, the drain region is connected to the second conductive film via the contact hole formed on the drain region, and the pixel electrode is connected to the second conductive film via the contact hole formed on the second conductive film. Therefore, two contact holes are required, and since the contact holes have a short distance, it is easy to control the etching depth and prevent penetration.

(4) In another aspect of the first electro-optical device of the present invention, the second conductive film has a channel region of the thin film transistor, and a junction region of the source / drain region of the thin film transistor and the channel region. And covering at least a part of the source / drain region adjacent to the junction region.

According to such a configuration of the present invention, the channel region is shielded by the scanning line arranged above the channel region and the first conductive film, and is further arranged between the scanning line and the first conductive film. Since light is shielded by the two conductive films, light can be shielded by the triple film, and the light shielding effect of the channel region can be further enhanced.

(5) In another aspect of the first electro-optical device of the present invention, the channel region is covered with the data line arranged above the first conductive film via an insulating film. It is characterized by being

According to this structure of the present invention, the channel region is shielded by the scanning line arranged above it and the first conductive film, and is further arranged above the second conductive film. Since the light is shielded by the data line, it can be shielded by the quadruple film, and the light shielding effect of the channel region can be further enhanced. Moreover, since the data line is arranged above the first conductive film, it is possible to suppress the temperature rise in the first conductive film due to light absorption.

(6) According to another aspect of the first electro-optical device of the present invention, it has a third conductive film made of the same film as the scanning line, and the third conductive film is an interlayer insulating film. It is characterized in that it is arranged so as to face the second conductive film.

According to such a configuration of the present invention, in addition to the storage capacitance due to the overlap between the first conductive film and the second conductive film,
By disposing the conductive film and the third conductive film so as to face each other with the interlayer insulating film interposed therebetween, it is possible to stack the storage capacitors in the thickness direction of the substrate. Therefore, even if the pixel pitch is miniaturized, it is possible to build a relatively large storage capacitor in the non-opening region. Further, since the third conductive film is made of the same film as the scanning line, the storage capacitor can be constructed with a laminated structure having a relatively small number of layers.

(7) According to another aspect of the first electro-optical device of the present invention, a fourth film is formed of the same film as the drain region.
It is characterized in that it has a conductive film, and the fourth conductive film is arranged so as to face the third conductive film via the gate insulating film.

According to such a configuration of the present invention, by disposing the fourth conductive film made of the same film as the drain region so as to face the third conductive film with the gate insulating film interposed therebetween, the storage capacitance is further increased in the thickness direction of the substrate. Can be stacked. That is,
A storage capacitance due to the overlapping of the first conductive film and the second conductive film,
A storage capacitance due to the overlapping of the second conductive film and the third conductive film,
The storage capacitance due to the overlapping of the third conductive film and the fourth conductive film allows the storage capacitors to be stacked in the thickness direction of the substrate. It is possible to build. Further, since the fourth conductive film is made of the same film as the drain region, the storage capacitor can be constructed with a laminated structure having a relatively small number of layers.

(8) According to another aspect of the first electro-optical device of the present invention, the first conductive film and the third conductive film are electrically connected to each other.

According to this structure of the present invention, two storage capacitors can be formed with the second conductive film interposed therebetween.

(9) According to another aspect of the first electro-optical device of the present invention, the second conductive film and the fourth conductive film are electrically connected to each other. To do.

According to this structure of the present invention, two storage capacitors can be formed with the third conductive film interposed therebetween. In particular, a combination of the first conductive film and the third conductive film and the second conductive film and the fourth conductive film arranged in the thickness direction of the substrate forms a storage capacitor having a comb-like meshed shape. . Therefore, it is possible to build a larger storage capacity in the non-opening region.

(10) According to another aspect of the first electro-optical device of the present invention, the first conductive film is made of a light-shielding conductive film.
Becomes the first conductive film covers the channel region, in the channel region and its neighboring region, in that it is formed so that the data lines in plan view is not protrude said first conductive layer Characterize.

According to such a configuration of the present invention, since the first conductive film covers the channel region, it is possible to prevent light from entering the channel region even with oblique incident light. Moreover, the data line is formed on the channel region so as not to protrude from the first conductive film in plan view.
Since the first conductive film located closer to the channel region is formed wider between the data line and the first conductive film, it is possible to prevent oblique light from entering the channel region. It is possible to prevent the reflected light of the line from entering the channel region.

(11) According to another aspect of the first electro-optical device of the present invention, the second conductive film is made of a film having a reflectance lower than that of the data line.

According to this structure of the present invention, since the reflectance of the second conductive film is lower than the reflectance of the data line, the reflected light or the multiple reflected light which reaches the channel region due to the oblique return light is not reflected. When the light is reflected on the lower surface of the second conductive film as in the invention, the light attenuated by the lower reflectivity is incident as compared with the case where the light is reflected on the lower surface of the data line. The influence of light can be suppressed. That is,
In the case of the present invention, even if the reflected light or the multiple reflected light from the lower side of the second conductive film reaches the channel region, its light intensity is attenuated, so that the characteristic change of the thin film transistor is suppressed. You can do it. Further, even for obliquely incident light, it is possible to sufficiently shield the channel region by widening the width of the second conductive film.

(12) According to another aspect of the electro-optical device of the present invention, the first conductive film and the data line are formed of a film containing at least Al.

According to this aspect of the invention, the incident light is reflected by the data line and the first conductive film, the temperature rise of the electro-optical device can be prevented, and the first conductive film can have a low resistance. it can.

(13) In another aspect of the first electro-optical device of the present invention, there is provided a base light-shielding film disposed below the semiconductor layer on the substrate, and the base light-shielding film is formed on the substrate. When viewed from the opposite side, at least the channel region is covered, and the underlying light-shielding film is formed so as not to protrude beyond the first conductive film in a plan view in the channel region and its adjacent region. To do.

According to such a structure of the present invention, since the scanning line, the first conductive film, and the data line are formed above the channel region, it is possible to prevent light from being irradiated onto the channel region from above. Further, since the base light-shielding film is arranged below the channel region, the channel region can be shielded from above and below. In particular, since the base light-shielding film covers the channel region, the base light-shielding film can prevent the channel region from being irradiated with light (return light or the like) from the opposite side of the substrate. Further, in the channel region and its adjacent region, the underlying light-shielding film is formed so as not to protrude beyond the first conductive film in plan view, so that the incident light is reflected by the underlying light-shielding film and applied to the channel region. Can be prevented. Even if there is oblique return light that may irradiate the channel region due to multiple reflection, most of it is reflected by the first conductive film having a low reflectance and is incident on the channel region. Attenuated light is incident on the region, and it is possible to prevent the light reflected by the data line having high reflectance from irradiating the channel region. Therefore, even if multiple reflection occurs, the influence on the channel region can be extremely suppressed.

(14) According to another aspect of the first electro-optical device of the present invention, the first conductive film is made of a light-shielding conductive film.
At least one of the first conductive film and the underlying light-shielding film is made of a refractory metal.

According to this aspect of the invention, the first conductive film and the underlying light-shielding film are made of, for example, an opaque refractory metal Ti.
(Titanium), Cr (Chromium), W (Tungsten), T
It is composed of a simple metal, an alloy, a metal silicide or the like containing at least one of a (tantalum), Mo (molybdenum) and Pb (lead). Therefore, the high temperature treatment can
It is possible to prevent the conductive film and the underlying light-shielding film from being destroyed or melted. Then, for example, when general Al (aluminum) is used as the material of the data line, the reflectance of the data line exceeds 80%, while Ti and C forming the first conductive film are used.
Since the reflectance of refractory metals such as r and W is significantly lower than this, the effects of the present invention can be sufficiently exerted.

(15) According to another aspect of the first electro-optical device of the present invention, the first conductive film and the second conductive film are
The first conductive film and the second conductive film are formed of a light-shielding conductive film and have substantially the same size below the data line.

According to this aspect, since the first conductive film has substantially the same size as the second conductive film, it is possible to prevent light from entering the channel layer due to internal reflection of the first conductive film, and Since the second conductive film has almost the same size as the first conductive film, the area of the first conductive film can be increased and the storage capacitance can be increased.

(16) According to another aspect of the first electro-optical device of the present invention, the first conductive film extends from the image display region in which the pixel electrode is arranged to the periphery thereof and the periphery thereof. It is characterized in that it is connected to a constant potential source in a region.

According to this aspect, the first conductive film functions not only as a light-shielding film but also as one electrode of the storage capacitor, and further, as it functions as a capacitance line, it has a relatively small number of layers. It is possible to construct a storage capacitor including a capacitance electrode in which a capacitance line is connected to a constant potential source while sufficiently shielding the channel region with a number of laminated structures. On this occasion,
The capacitance electrode may be formed of the first conductive film, or the capacitance electrode or another capacitance line (capacity line mutually redundant) may be formed of a conductive film different from the first conductive film. Moreover, it is possible to efficiently use the light-shielding region (non-opening region of each pixel) to connect the capacitor electrode to the constant potential source. As the constant potential source, if a constant potential source for peripheral circuits such as a data line driving circuit and a scanning line driving circuit provided in the peripheral area is used, it is not necessary to provide a dedicated constant potential source. It is efficient.

(17) According to another aspect of the first electro-optical device of the present invention, the third conductive film extends from the image display region to the periphery thereof along the scanning line and the periphery thereof. A region is formed of a capacitance line connected to a constant potential source, and the first conductive film is connected to the capacitance line.

According to this aspect, since the first conductive film is connected to the capacitance line, the potential of the first conductive film can be kept constant via the capacitance line, and the first conductive film is channeled. Even when the thin film transistor is arranged near a region or the like, it is possible to prevent a situation in which the characteristics of the thin film transistor are adversely affected by the potential fluctuation of the first conductive film. In addition, when the first conductive film is used as the capacitance electrode, the potential of the first conductive film can be fixed by the capacitance line, so that it can function well as the capacitance electrode.

(18) According to another aspect of the first electro-optical device of the present invention, the base light-shielding film is made of a light-shielding conductive film and is connected to the capacitance line for each pixel. Characterize.

According to this aspect, since the base light-shielding film is connected to the capacitance line for each pixel, the potential of the base light-shielding film can be kept constant via the capacitance line, and the base light-shielding film can be used as a channel. Even when the thin film transistor is arranged near a region or the like, it is possible to prevent the situation in which the characteristics of the thin film transistor are adversely affected by the potential fluctuation of the underlying light shielding film. Further, when the underlying light-shielding film is used as the capacitance electrode, the potential of the underlying light-shielding film can be fixed to the capacitance line, so that it can function well as the capacitance electrode.

(19) The second electro-optical device according to the present invention is
The thin film transistor is electrically connected to the semiconductor layer of the thin film transistor through a first connecting portion, and
Shading arranged to cover the channel region of the transistor
And sex of data lines, a scanning line overlapping the semiconductor layer of the thin film transistor, the semiconductor layer of the thin film transistor and the second
A pixel electrode which is electrically connected via the connecting portion, wherein
The light-shielding film is disposed below the data line and is provided in a region of the data line and the scanning line while avoiding the first connection portion and the second connection portion. .

According to this structure of the present invention, the light-shielding film is
It is possible to shield the defective area having a poor contrast ratio around the pixel electrode.

(20) In one aspect of the second electro-optical device of the present invention, the light-shielding film overlaps an edge portion of the pixel electrode.

According to this structure of the present invention, the light-shielding film is
The non-opening area can be defined by blocking the areas of the data line and the scanning line.

(21) In another aspect of the electro-optical device of the present invention, a lower light shielding film is provided below the semiconductor layer, and at least a part of the thin film transistor is sandwiched between the light shielding film and the lower light shielding film. Is characterized by.

According to this structure of the present invention, the light-shielding film and the lower light-shielding film can prevent light from entering the thin film transistor, and can suppress changes in the characteristics of the thin film transistor.

(22) In another aspect of the second electro-optical device of the present invention, the lower light-shielding film extends along at least one of the data line and the scanning line.

According to this structure of the present invention, the light-shielding property of the non-pixel opening region can be enhanced only by the substrate having the thin film transistor.

(23) In another aspect of the second electro-optical device of the present invention, at least a surface of the lower light-shielding film facing the thin film transistor side is formed of an antireflection film.

According to this structure of the present invention, when the lower light-shielding film is irradiated with the incident light, the antireflection film can prevent the light from being reflected to the channel region or the channel adjacent region of the thin film transistor.

(24) In another aspect of the second electro-optical device of the present invention, the electro-optical device further comprises a conductive relay film for electrically connecting the semiconductor layer and the pixel electrode.

According to such a structure of the present invention, it is possible to prevent the penetration of the etching due to the opening of the contact hole for connecting the pixel electrode and the drain region.

(25) In another aspect of the second electro-optical device of the present invention, the relay film is provided with the data line while avoiding the first connection portion that connects the semiconductor layer and the data line. It is characterized in that it is arranged in the region of the scanning line.

According to this structure of the present invention, it is possible to improve the light-shielding performance while ensuring the area of the first connection portion that connects the semiconductor layer and the data line.

(26) In another aspect of the second electro-optical device of the present invention, the relay film is arranged in a region of the second connection portion between the semiconductor layer and the pixel electrode, which is avoided by the light shielding film. It is characterized by being.

According to such a configuration of the present invention, the region along the scanning line can be completely shielded by shielding the region of the second connection portion between the semiconductor layer and the pixel electrode which cannot be shielded by the shielding film.

(27) In another aspect of the second electro-optical device of the present invention, the data line is formed of a light-shielding material.

According to such a constitution of the present invention, the light shielding performance can be further improved.

(28) In another aspect of the second electro-optical device of the present invention, a gap is formed between the data line and the pixel electrode, and the light shielding film is arranged in the region of the gap. It is characterized by

According to such a configuration of the present invention, the parasitic capacitance between the data line and the pixel electrode can be reduced, and the space between the data line and the pixel electrode can be shielded to define the pixel opening region.

(29) In another aspect of the second electro-optical device of the present invention, the data line is in a region of the first connection portion between the semiconductor layer and the data line, which is avoided by the light shielding film. It is characterized by being arranged.

According to such a configuration of the present invention, the region along the data line can be completely shielded by shielding the region of the first connection portion between the semiconductor layer and the data line which cannot be shielded by the light shielding film. .

(30) In another aspect of the second electro-optical device of the present invention, the non-pixel opening region is formed of the light shielding film and the lower light shielding film.

According to the structure of the present invention, the shorter the distance between the light shielding film and the lower light shielding film, the higher the light shielding property of the thin film transistor can be.

(31) In another aspect of the second electro-optical device of the present invention, the scanning line extends substantially at the center of the non-pixel opening region.

According to such a configuration of the present invention, if it is not necessary to form a capacitive electrode that forms a storage capacitor in the same film as the scanning line, the scanning line is extended to almost the center of the non-pixel opening region, and the thin film transistor of the thin film transistor is formed. The light blocking property of the channel region and its vicinity can be improved.

(32) In another aspect of the second electro-optical device of the present invention, in the periphery including the channel region of the thin film transistor, the relay film is provided in a region inside the light shielding film, and the relay film is provided inside the relay film. The lower light-shielding film is present in the area (1).

According to this structure of the present invention, the light incident from the side of the light shielding film is not directly applied to the lower light shielding film, so that the light reflected by the lower light shielding film is prevented from entering the thin film transistor. You can

(33) In another aspect of the second electro-optical device of the present invention, the semiconductor layer is located in a region inside the data line.

According to this structure of the present invention, by forming the semiconductor layer in the region of the data line, it is possible to reduce the incidence of light on the semiconductor layer. Accordingly, the semiconductor layer does not extend along the scanning line, so that the non-pixel opening region can have a narrow pitch and the light shielding performance can be improved.

The operation and other advantages of the present invention will be apparent from the embodiments described below.

[0073]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below with reference to the drawings.

(First Embodiment) The configuration of a liquid crystal device which is an example of the electro-optical device of the present invention will be described with reference to FIGS. 1 to 11. FIG. 1 is an equivalent circuit of various elements, wirings, etc. in a plurality of pixels formed in a matrix which constitutes an image display area of a liquid crystal device, and FIG. 2 shows data lines, scanning lines, pixel electrodes, etc. FIG. 3 is a plan view of a plurality of pixel groups adjacent to each other on the TFT array substrate, and FIG. 3 is a cross-sectional view taken along line AA ′ of FIG. 2. In FIG. 3, the scales of the layers and members are different so that the layers and members are recognizable in the drawing.

In FIG. 1, a plurality of pixels formed in a matrix form the image display area of the liquid crystal device of this embodiment are provided with a pixel electrode 9a and a TFT 30 for controlling the pixel electrode 9a. The data line 6a to which the image signal is supplied is electrically connected to the source of the TFT 30. Image signal S to be written in the data line 6a
, S2, ..., Sn may be supplied line-sequentially in this order, or may be supplied for each group to a plurality of adjacent data lines 6a. Also, T
The scanning line 3a is electrically connected to the gate of the FT 30, and the scanning signal G1 is supplied to the scanning line 3a at a predetermined timing.
, Gm are line-sequentially applied in this order. The pixel electrode 9a is electrically connected to the drain of the TFT 30 and serves as a switching element T.
By closing the switch of the FT 30 for a fixed period, the image signals S1, S2 supplied from the data line 6a,
..., Sn is written at a predetermined timing. Pixel electrode 9a
The image signal S of a predetermined level written in the liquid crystal through the
, S2, ..., Sn are held for a certain period of time with a counter electrode (described later) formed on a counter substrate (described later). The liquid crystal modulates light by changing the orientation and order of the molecular assembly depending on the applied voltage level, and enables gradation display. In the normally white mode, the transmitted light amount of the incident light decreases according to the applied voltage, and in the normally black mode, the transmitted light amount of the incident light increases according to the applied voltage. Light having a contrast ratio according to the image signal is emitted from the device.
Here, in order to prevent the held image signal from leaking, the storage capacitor 70 is added in parallel with the liquid crystal capacitor formed between the pixel electrode 9a and the counter electrode. The storage capacity 70 is
One capacitance electrode electrically connected to the pixel electrode 9a,
It is formed between the capacitance line 300 to which a constant potential is supplied and the other capacitance electrode electrically connected via a dielectric film.
The storage capacitor 70 holds, for example, the voltage of the pixel electrode 9a for a time that is three orders of magnitude longer than the time when the source voltage is applied. As a result, the holding characteristic is further improved, and a liquid crystal device having a high contrast ratio can be realized.

In FIG. 2, a plurality of transparent pixel electrodes 9a are arranged in a matrix on the TFT array substrate of the liquid crystal device.
(The pixel electrode end 9a 'is shown by a dotted line portion), and the data line 6a and the scanning line 3a are provided along the vertical and horizontal boundaries of the pixel electrode 9a, respectively. The scanning line 3a is arranged so as to face the channel region 1a '(the region of the oblique line on the lower right in the drawing) of the semiconductor layer 1a, and the scanning line 3a functions as a gate electrode. As described above, the TFTs 30 are provided at the intersections of the scanning lines 3a and the data lines 6a, in which a part of the scanning lines 3a is arranged as a gate electrode in the channel region 1a 'so as to face each other. The pixel electrode 9a relays the relay film 80a which is an intermediate conductive film,
The semiconductor layer 1a is electrically connected to a drain described later through the contact holes 8a and 8b. The data line 6a is electrically connected to a later-described source region of the semiconductor layer 1a made of a polysilicon film or the like through the contact hole 5.

Further, the capacitive electrode 3b (which is made of the same film as the scanning line 3a) is formed so as to at least partially overlap the capacitive electrode 1f (fourth capacitive electrode) extending from the semiconductor layer 1a with a gate insulating film described later interposed therebetween. A third capacitor electrode) may be provided. Thereby, at least a part of the storage capacitor 70 in FIG. 1 can be formed.

Further, a base light-shielding film 11a is provided in each of the regions shown by thick lines in FIG. 2 so as to pass below the TFT 30 along the scanning line 3a. More specifically, the base light-shielding film 11a is provided at a position that covers at least the channel region 1a ′ of the TFT and the junction region of the channel region 1a ′ and the source and drain regions, respectively, when viewed from the TFT array substrate side. . In addition, it is preferable that the pixel electrodes 9a are extended from the image display area formed in a matrix along the direction of the scanning line 3a to the periphery thereof and are connected to the constant potential source in the peripheral area. Thus, by fixing the potential of the base light-shielding film 11a at a constant potential, T
A malfunction of the FT 30 can be prevented. As the constant potential source, a peripheral circuit for driving the liquid crystal device described later,
For example, a constant potential source such as a negative power source or a positive power source supplied to the scan line driving circuit or the data line driving circuit, a ground power source, a constant potential source supplied to the counter electrode, or the like can be given. If the potential level is set, it is desirable to keep the scanning signal supplied to the scanning line 3a at the off level. As a result, almost no parasitic capacitance is generated between the scanning line 3a and the scanning line 3a, so that the scanning signal supplied to the scanning line 3a is hardly delayed.

In the present embodiment, in particular, the light-shielding conductive film (first capacitance electrode) 90 is provided in the region shown by the diagonal line rising to the right in the figure.
a is formed. The light-shielding conductive film 90a is formed between the scanning lines 3a and the data lines 6a, and the wirings such as the data lines 6a and the scanning lines 3a and the TFTs 3 except for the regions where the contact holes 5 and the contact holes 8b are formed.
Since it can be overlapped with 0 or a storage capacitor formation region in a plan view, it is possible to realize light shielding on the TFT array substrate. In addition, the light-shielding conductive film 90a is formed on the scanning line 3a.
It is possible to extend from the image display area to the periphery thereof in the direction of and to connect to the constant potential source in the peripheral area. As a result, the light-shielding conductive film 90a becomes the capacitance line 300 in FIG.
Can function as. Further, through the contact hole 95, the capacitance electrode 3b made of the same film as the scanning line 3a is formed.
By connecting to the capacitor electrode 1f, a constant potential is supplied, so that the storage capacitor 70 can be easily formed with the capacitor electrode 1f. As the constant potential source, a peripheral circuit for driving the liquid crystal device described later, for example, a negative power source supplied to a scanning line driving circuit, a data line driving circuit, a constant potential source such as a positive power source, a ground power source, a counter The constant potential source etc. which are supplied to an electrode are mentioned.

Next, as shown in the cross-sectional view of FIG. 3, the liquid crystal device according to the present embodiment has a transparent T structure that constitutes an example of the substrate.
An FT array substrate 10 and a transparent counter substrate 20 arranged to face the FT array substrate 10 are provided. The TFT array substrate 10 is
For example, it is made of a quartz substrate, a glass substrate or a silicon substrate, and the counter substrate 20 is made of, for example, a glass substrate or a quartz substrate. The TFT array substrate 10 is provided with a pixel electrode 9a made of a transparent conductive film such as an ITO film,
When TN (Twisted Nematic) liquid crystal or the like is used for the liquid crystal layer 50, the alignment film 16 that has been subjected to a predetermined alignment treatment such as rubbing treatment is provided on the surface of the pixel electrode 9a.

On the other hand, the counter substrate 20 is provided with a counter electrode 21 made of a transparent conductive film such as an ITO film over the entire surface thereof, and the surface of the counter electrode 21 is subjected to a predetermined alignment treatment such as rubbing treatment. The applied alignment film 22 is provided.

Further, a base light-shielding film 11a is provided between the TFT array substrate 10 and the TFT 30 at a position facing the TFT 30. Base light-shielding film 11a
Are formed at least at positions facing the channel region 1a ′ of the pixel switching TFT 30 and the junction region of the channel region 1a ′ and the source and drain regions, so that reflected light from the TFT array substrate 10 side, etc. The channel region 1a 'and its adjacent region are not irradiated. As a result, the characteristics of the TFT 30 do not change due to the generation of leak current caused by light. The base light-shielding film 11a is preferably Ti (titanium) or Cr.
(Chrome), W (tungsten), Ta (tantalum),
It is preferably composed of a simple metal, an alloy, a metal silicide or the like containing at least one opaque refractory metal such as Mo (molybdenum) and Pb (lead). Alternatively, an antireflection film of polysilicon or the like may be formed on the surface of the base light-shielding film 11a so that the light can be absorbed even if the incident light directly goes around. Further, when the light reflected from the TFT array substrate 10 side is weak, a polysilicon film may be used for the base light-shielding film 11a. Underlayer light-shielding film 1 from such a material
With the configuration of 1a, it is possible to prevent the base light-shielding film 11a from being destroyed or melted by the high temperature treatment in the formation of the gate insulating film 2, for example. In the present embodiment, the underlying light-shielding film 11a is formed below each scanning line 3a in a striped pattern along the scanning line 3a, but below each data line 6a is striped along the data line 6a. It is needless to say that they may be formed in a rectangular shape or may be formed in a grid pattern below each scanning line 3a and each data line 6a. By forming the underlying light-shielding film 11a in a striped pattern in this manner, the stress due to the underlying light-shielding film 11a can be relaxed, and by forming the underlying light-shielding film 11a, not only the light-shielding property is improved but also the underlying light-shielding film 11a is further reduced in resistance. Can be achieved.

A base insulating film 12 is provided between the base light-shielding film 11a and the TFT 30. The base insulating film 12 is provided to electrically insulate the semiconductor layer 1a forming the TFT 30 from the base light shielding film 11a. Further, the base insulating film 12 is formed on the TFT array substrate 10
By being formed on the entire surface of, the TFT also has a function as a base film for the TFT 30. That is, it has a function of preventing the characteristics of the TFT 30 from changing due to the roughness of the surface of the TFT array substrate 10 during polishing, the stain remaining after cleaning, and the like. The base insulating film 12 is, for example, NSG (non-doped tosilicate glass), PSG (phosphosilicate glass), or BS.
It is made of a highly insulating glass such as G (boron silicate glass) or BPSG (boron phosphorus silicate glass), or a silicon oxide film, a silicon nitride film, or the like. Further, the underlying insulating film 12 can prevent the underlying light shielding film 11a from contaminating the TFT 30 and the like.

Further, in the present embodiment, the TFT 30 formed on the base insulating film 12 has an LDD (Lightly Doped Drai).
n) structure, the semiconductor layer 1a made of, for example, a polysilicon film has a low-concentration source region 1b and a low-concentration drain region 1c sandwiching a channel region 1a ′ in which a channel is formed by an electric field from the scanning line 3a. And the high concentration source region 1d is connected to the low concentration source region 1b,
The high concentration drain region 1e is connected to the low concentration drain region 1c. By thus forming the TFT 30 with the LDD structure, the leak current when the TFT 30 is off can be significantly reduced, and the holding performance can be improved. Further, the TFT 30 may have an offset structure in which impurities are not implanted in the low concentration source region 1b and the low concentration drain region 1c, or the scanning line 3 may be used.
A self-aligned TFT in which a high-concentration source region 1d and a high-concentration drain region 1e are formed in a self-aligned manner by using a gate electrode which is a part of a as a mask to implant impurities at a high concentration may be used.

The gate insulating film 2 is formed as a thin film of 100 nm or less on the semiconductor layer 1a. As the gate insulating film 2, a dense and highly insulating film can be formed by oxidizing a polysilicon film at a high temperature of 1000 ° C. or higher. If high temperature processing is not possible, use CVD (Chemical Vapor Dep
osition) or the like. On the gate insulating film 2, for example, a scanning line 3a formed of a low resistance polysilicon film into which P (phosphorus) is implanted is arranged, and the semiconductor layer 1 is formed.
The scanning line 3a in a portion overlapping with a functions as a gate electrode.

Gate insulating film 2 formed on semiconductor layer 1a
And an interlayer insulating film 81 is deposited on the scanning line 3a by CVD or the like, and at a predetermined position of the high-concentration drain region 1e,
A contact hole 8a is opened in the gate insulating film 2 and the interlayer insulating film 81. The high-concentration drain region 1e is electrically connected to the conductive relay film 80a through the contact hole 8a. The interlayer insulating film 9 is formed on the relay film 80a.
1, the interlayer insulating film 4 and the interlayer insulating film 7 are sequentially stacked, and a contact hole 8b is opened at a predetermined position of the relay film 80a (second capacitance electrode) with respect to these interlayer insulating films. The relay film 80a and the pixel electrode 9a are electrically connected through the contact hole 8b. Thus, the relay film 80a functions as an intermediate conductive film for electrically connecting the semiconductor layer 1a and the pixel electrode 9a. With this relay film 80a, for a long distance from the pixel electrode 9a to the semiconductor layer 1a,
Since it is not necessary to open the contact hole at once, it is possible to prevent the semiconductor layer 1a having a very thin film thickness of, for example, about 50 nm from penetrating. Further, there is an advantage that the diameters of the contact holes 8a and 8b can be reduced by forming the contact holes separately. This allows
Since the area for forming the contact holes 8a and 8b can be small, the pixel aperture ratio can be increased and high definition can be realized. The material of the relay film 80a is Ti, Cr, W, Ta, M as in the case of the base light-shielding film 11a.
If it is formed of a simple metal, alloy, metal silicide or the like containing at least one opaque refractory metal such as o and Pb, it can function as a light shielding film. Further, since the selection ratio at the time of etching is high, even if the relay film 80a is formed to have a film thickness of, for example, about 50 nm, the relay film 80a does not penetrate through when the contact hole 8b is opened. If the interlayer insulating film 81 for insulating the scanning line 3a and the relay film 80a from each other is formed to have a film thickness of, for example, 500 nm or more that does not affect the switching operation of the TFT 30, the relay film 80a will be formed on the TFT 30 and the scanning line 3a. Can be provided so as to overlap with each other when viewed two-dimensionally. This allows
Since the light can be shielded below the data line 6a and in the immediate vicinity of the semiconductor layer 1a constituting the TFT 30, the incident light is directly irradiated to the channel region 1a ′ and the low-concentration source region 1b and the low-concentration drain region 1c which are the junction regions thereof. Or, the stray light reflected by the data line 6a or the like is not emitted.
As a result, the leak current when the TFT 30 is off can be significantly reduced, and the holding performance can be significantly improved.

In this embodiment, as shown in FIG.
A light-shielding conductive film 90a is formed on the relay film 80a via an interlayer insulating film 91. The light-shielding conductive film 90a can shield the non-opening region except the contact holes 5 and 8b, as described above. In addition, the light-shielding conductive film 9
Since 0a can function as the capacitor line 300 in FIG. 1, at least a part of the storage capacitor 70 can be formed between the conductive film 90a and the relay film 80a by using the interlayer insulating film 91 as a dielectric film. That is, the relay film 80a and the light-shielding conductive film 90a function as an electrode for forming the storage capacitor 70. Further, light can be shielded by the two layers of the relay film 80a and the light-shielding conductive film 90a in the immediate vicinity of the semiconductor layer 1a forming the TFT 30. As a result, the TFT 30
Since the leakage current at the time of turning off can be further greatly reduced, it is very advantageous for a liquid crystal device used under a strong light source such as a projection type projector. The material of the light-shielding conductive film 90a is Ti, Cr, W, Ta, Mo and Pb, like the base light-shielding film 11a or the relay film 80a.
When formed of a simple metal, an alloy, a metal silicide, or the like containing at least one opaque refractory metal such as, a wiring having a high light-shielding property and a low resistance can be realized. In addition, if a high temperature treatment of 400 degrees or more, such as activation heat treatment, is completed before forming the light-shielding conductive film 90a, a metal simple substance, an alloy, including Al (aluminum) having a lower resistance,
The light-shielding conductive film 90a can be formed of metal silicide or the like. By forming the light-shielding conductive film 90a which also serves as the capacitance line 300 with the same Al as the material of the data line 6a, the resistance of the capacitance line 300 is reduced by 2 to 3 digits as compared with the conventional polysilicon film. Can be achieved.
As a result, crosstalk in the scanning line 3a direction caused by the large time constant of the capacitance line 300 can be significantly reduced.

The light-shielding conductive film 90a may be electrically connected to the capacitance electrode 3b formed of the same film as the scanning line 3a through the contact hole 95 for each pixel electrode 9a. As a result, the capacitance electrode 3b can be fixed to the same constant potential as the light-shielding conductive film 90a. Therefore, between the capacitor electrode 3b and the relay film 80a electrically connected to the high-concentration drain region 1e of the semiconductor layer 1a, at least a part of the storage capacitor 70 is also used in this region by using the interlayer insulating film 81 as a dielectric film. Can be formed. Further, between the capacitor electrode 3b and the capacitor electrode 1f extending from the high-concentration drain region 1e of the semiconductor layer 1a, the gate insulating film 2 is used as a dielectric film to form at least a part of the storage capacitor 70 also in this region. You can also do it. In addition, the contact hole 95 is formed below the data line 6a to electrically connect the semiconductor layer 1a connected to the pixel electrode 9a adjacent to the data line 6a and the data line 6a. It is advisable to make an electrical connection in the immediate vicinity of the contact hole 5. With such a configuration, it is possible to secure a large area below the data line 6a for forming the storage capacitor 70.

FIG. 4 shows an equivalent circuit diagram of one pixel constituting the liquid crystal device of this embodiment. As shown in FIG. 4, the high-concentration drain region 1e of the semiconductor layer 1a is electrically connected to the relay film 80a and the pixel electrode 9a, while the light-shielding conductive film 9 is formed.
0a and the capacitive electrode 3b are electrically connected. The light-shielding conductive film 90a extends from the image display area to the periphery thereof and is connected to the constant potential source in the peripheral area. Further, the base light-shielding film 11a and the light-shielding conductive film 90a may be electrically connected. By combining these conductive films, the storage capacitor 70 having an ideal stack structure can be formed. That is, in the present embodiment, the high-concentration drain region 1e is provided between the conductive films of the light-shielding conductive film 90a fixed to a constant potential, the capacitor electrode 3b, and the base light-shielding film 11a via the dielectric film. It becomes possible to form the capacitor electrode 1f, the relay film 80a, and the pixel electrode 9a.

Specifically, FIGS. 5 to 9 show which region the storage capacitor is formed in the plan view of the adjacent pixel groups in FIG. The scales of FIGS. 2 and 5 to 9 are the same.

FIG. 5 shows a light-shielding conductive film 90a and a relay film 8.
0a shows the first storage capacitor C1 formed between the first storage capacitor C1 and the storage capacitor 0a. The interlayer insulating film 91 is used as the dielectric film. The cross-hatched area is an area where the first storage capacitor C1 is actually formed, and the contact hole 5 and the contact hole 95 are formed.
In addition, the storage capacitor C1 can be formed in a considerable part of the non-opening region except the contact hole 8b. Here, when the capacitance electrode 3b is not provided, it is not necessary to open the contact hole 95 for electrically connecting the capacitance electrode 3b and the light-shielding conductive film 90a.
The storage capacitor C1 can be formed. Further, in the present embodiment, since the first storage capacitor C1 can be formed on the channel region 1a ′ of the TFT 30 which has been impossible in the past, it is possible to improve the pixel aperture ratio and miniaturization of the transmissive liquid crystal device. Is very advantageous. As the interlayer insulating film 91, a film having a high insulating property and a high dielectric constant such as an oxide film or a nitride film can be used. Further, the relay film 80a is formed of a polysilicon film, and further, the light-shielding conductive film 90a is formed on the lower layer of the polysilicon film,
By forming the upper layer with a multilayer structure such as a light-shielding film containing a refractory metal, the interlayer insulating film 91 can be formed in a continuous process with the polysilicon film, so that a dense insulating film with few defects can be formed. You can This allows
In addition to reducing device defects, the interlayer insulating film 91a is reduced to 100n.
Since it can be formed to have a film thickness of m or less, the first storage capacitance C1 can be further increased.

Next, FIG. 6 shows the relay film 80a and the capacitor electrode 3b.
2 shows a second storage capacitor C2 formed between and. The interlayer insulating film 81 is used as the dielectric film. The cross-hatched area is an area where the second storage capacitor C2 is actually formed. The capacitor electrode 3b includes the semiconductor layer 1a and the relay film 80a.
Is divided for each pixel in the region of the contact hole 8a for electrically connecting with each other, and is electrically connected to the upper light-shielding conductive film 90a through the contact hole 95.
As shown in FIG. 6, when the capacitor electrode 3b is formed in a T shape, the second storage capacitor C2 can be efficiently formed. As the interlayer insulating film 81, a film having a high insulating property and a high dielectric constant such as an oxide film or a nitride film can be used. However, since the capacitor electrode 3b is formed of the same film as the scanning line 3a, the second storage capacitor C2
The area in which the first storage capacitor C1 is formed is smaller than the area in which the first storage capacitor C1 is formed. When the relay film 80a shields the channel region 1a ′ and its adjacent region from light, the thickness of the interlayer insulating film 81 is required to be 500 nm or more in order to prevent malfunction of the TFT 30, so that the second storage capacitor C
2 cannot be increased as much as the second storage capacity C1.

FIG. 7 shows a third storage capacitor C3 formed between the capacitance electrode 3b and the capacitance electrode 1f. The gate insulating film 2 is used as the dielectric film. The cross-hatched area is an area where the third storage capacitor C3 is actually formed. As described above, since the gate insulating film 2 is formed by being oxidized at a high temperature of 1000 ° C. or higher, a dense and highly insulating film is formed. Therefore, the area where the third storage capacitor C3 can be formed is almost the same as the area where the second storage capacitor C2 is formed in FIG. 6, but the third storage capacitor C3 is
It can be formed larger than 2. Also, the capacitor electrode 3
The third storage capacitor C3 can also be formed below the formation region of the contact hole 95 for electrically connecting the b and the upper light-shielding conductive film 90a.

Further, as shown in FIG. 8, the fourth storage capacitor C4 can be formed between the capacitor electrode 1f and the base light-shielding film 11a. The base insulating film 12 is used as the dielectric film. The area of cross hatching is actually the fourth storage capacity C
4 is a region to be formed. Underlayer insulating film 12 is 500n
If the film is formed with a film thickness of m or less, the distance between the channel region 1a ′ and the base light-shielding film 11a is also reduced, and the TFT 30 malfunctions due to the potential of the base light-shielding film 11a. Therefore,
The fourth insulating capacitor C4 may be increased by selectively thinning the underlying insulating film 12 in a region where the storage capacitor 1f and the underlying light-shielding film 11a overlap each other in plan view. That is, the fourth storage capacitance C4 can be increased by thinning the portion other than the region of the base insulating film 12 facing the channel region 1a.

Further, as shown in FIG. 9, the fifth storage capacitor C5 can be formed between the pixel electrode 9a and the light-shielding conductive film 90a. The interlayer insulating film 4 and the interlayer insulating film 7 are used as the dielectric film. The cross-hatched area is an area where the fifth storage capacitor C5 is actually formed. As the interlayer insulating film 4 and the interlayer insulating film 7, for example, NSG, P
It is made of highly insulating glass such as SG, BSG, or BPSG, or a silicon oxide film, a silicon nitride film, or the like. However, since the data line 6a is formed on the interlayer insulating film 4, the display image is deteriorated due to the parasitic capacitance generated between the pixel electrode 9a and the data line 6a. Therefore, it is necessary to thicken the interlayer insulating film 7. Actually, the fifth storage capacity C5 cannot be increased as much as the first storage capacity C1.

As described above, in the liquid crystal device of the present embodiment, the first storage capacitors C1 to C5 are stacked by stacking the capacitance electrodes for forming the storage capacitors 70 via the dielectric film.
Stack type storage capacity consisting of 5 layers up to storage capacity C5 7
0 can be formed. Thereby, even if the area for forming the storage capacitor is small, the large storage capacitor 70 can be efficiently formed. Here, in the liquid crystal device of the present embodiment, at least the first storage capacitor C1 can be formed.
In the future, even if the aperture ratio and the size of the pixel are further advanced and the storage capacitor electrode 3b cannot be formed, for example, according to the structure of the present embodiment, the interlayer which is the dielectric film of the first storage capacitor C1. By thinning the insulating film 91, a sufficient storage capacity 70 can be obtained.
Can be obtained. Therefore, according to the present embodiment, it is possible to select and use from among the storage capacitors of the first storage capacitor C1 to the fifth storage capacitor C5, which is advantageous for the specifications that meet the purpose of the electro-optical device. .

As shown in FIG. 3 again, the data line 6a is
It is formed on the interlayer insulating film 4 above the light-shielding conductive film 90a. Further, the data line 6a is connected to the gate insulating film 2,
Contact holes 5 are formed at predetermined locations in the interlayer insulating film 81, the interlayer insulating film 91, and the interlayer insulating film 7, and the high-concentration drain region 1 of the semiconductor layer 1 a is opened through the contact holes 5.
It is electrically connected to e. Further, since the image signal is supplied to the data line 6a, the data line 6a is made of a metal film such as Al having a low resistance and a high light shielding property, a metal silicide, or the like.

Here, in the liquid crystal device of the present embodiment, in addition to the data line 6a, the light-shielding conductive film 90a or the like can define the light-shielding region which is a non-opening region. Specifically, as shown in FIG. 10, a light-shielding conductive film 90a is formed so as to overlap the pixel electrode 9a, and the channel region 1a ′ is formed.
Most of the area including is shaded. Further, since the light-shielding conductive film 90a can shield most of the region along the data line 6a, it is not necessary to define the light-shielding region only by the data line 6a as in the conventional case, and the data line 6a and the pixel electrode 9a and 9a can be configured so as not to overlap with each other through the interlayer insulating film 7. As a result, the parasitic capacitance between the data line 6a and the pixel electrode 9a can be significantly reduced, and the display quality is not deteriorated due to the potential variation of the pixel electrode 9a. However, the light-shielding conductive film 9
Since 0a is formed below the data line 6a, the region where the contact hole 5 for electrically connecting the data line 6a and the semiconductor layer 1a is formed cannot be shielded. Therefore,
The region where the contact hole 5 is formed may be formed wide so that the data line 6a partially overlaps the pixel electrode 9a. If the region where the contact hole 5 is formed is located in the immediate vicinity of the channel region 1a ', the light-shielding conductive film 90a cannot sufficiently shield the vicinity of the channel region 1a'.
In such a case, there is no problem even if the formation region of the contact hole 5 is moved along the data line 6a in the direction away from the channel region 1a '. The present embodiment has an advantage that the first storage capacitor C1 formed between the relay film 80a and the light-shielding conductive film 90a does not change even if the formation region of the contact hole 5 is moved in this way. Also,
The light-shielding conductive film 90a includes the relay film 80a and the pixel electrode 9a.
Since it cannot be provided in the formation region of the contact hole 8b for electrically connecting and, this region may be shielded by the relay film 80a. If the relay film 80a is formed of a light transmissive film such as a polysilicon film, the base light shielding film 11a may shield light. At this time, the formation region of the contact hole 8b should be kept away from the channel region 1a '. As shown in FIG. 10, if the contact hole 8b is provided between the adjacent data lines 6a, even if the incident light is applied to the base light-shielding film 11a, it does not reach the channel region 1a ′, which is advantageous. is there. Further, since the pixel configuration can be formed line-symmetrically with respect to the data line 6a, for example, in a projector or the like in which liquid crystal devices having different twist directions of TN liquid crystal are combined, the display image quality such as color unevenness does not deteriorate.

As described above, in the present embodiment, since the light-shielding region can be defined on the TFT array substrate 10,
As shown in FIG. 3, it is not necessary to provide a light shielding film on the counter substrate 20. Therefore, when the TFT array substrate 10 and the counter substrate 20 are mechanically bonded together, even if the alignment is deviated, there is no light-shielding film on the counter substrate 20, so that the light transmitting region (opening region) is not changed. Absent. As a result, a stable pixel aperture ratio can always be obtained, and device defects can be greatly reduced.

Further, the liquid crystal device according to the present embodiment can have a structure stronger than the conventional one with respect to the incident angle of incident light. Therefore, description will be made with reference to FIG. Figure 11
(1) is a sectional view taken along the line BB ′ in FIG.
FIG. 11 (2) shows a conventional structure. Incidentally, FIG.
(1) and (2) are shown at the same scale.

In general, when light is irradiated to the vicinity of the channel region of the semiconductor layer 1a, a leak current due to photoexcitation occurs when the TFT 30 is turned off, so that the ability to retain the charges written in the pixel electrode 9a decreases. Will end up. Therefore, in the present embodiment, as shown in FIG. 11A, a conductive film 90a that shields the incident light L1 is provided, and TF
With respect to the reflected light L2 from the direction of the T array substrate 10, the base light-shielding film 11a is provided to prevent the semiconductor layer 1a from being irradiated with light. In addition, since the reflected light L2 is emitted at a light amount of 1/100 or less with respect to the light amount of the incident light L1, the width of the light-shielding conductive film 90a for shielding the incident light L1 in the channel region and its adjacent region. W
1 is longer than the width W2 of the base light-shielding film 11a. That is, the base light-shielding film 11a is formed so as not to protrude from the light-shielding conductive film 90a in the channel region and its adjacent region. Further, the width W3 of the semiconductor layer 1a is configured to be shorter than the width W2 of the base light-shielding film 11a in the channel region and its adjacent region. That is, the channel region and its adjacent region are covered with the base light-shielding film 11a when viewed from the TFT array substrate side. By adopting such a configuration, even if the incident light L1 is incident at an angle, it is possible to reduce the possibility that the light will reach the semiconductor layer 1a. Further, in the present embodiment, the light-shielding conductive film 90a is connected to the data line 6a and the semiconductor layer 1.
Since it can be formed between the layers of a, it becomes possible to shield light in the immediate vicinity of the channel region, as compared with the case where the data line 6a shields the channel region as in the conventional example shown in FIG. 11 (2). Now, let us consider a margin for the incident angle of the incident light L1 in the present embodiment and the conventional example. In general, it is unlikely that the incident light L1 is directly applied to the semiconductor layer 1a because the width W3 of the semiconductor layer 1a is short, for example, 1 μm. Therefore, the semiconductor layer 1a
It is assumed that the light applied to the underlying light-shielding film 11a provided below the mirror is reflected and applied to the semiconductor layer 1a. Here, it is assumed that the widths of the base light-shielding films 11a shown in (1) this embodiment and (2) conventional examples in FIG. 11 are the same W2. Further, the width of the light-shielding conductive film 90a in the present embodiment for blocking the incident light L1 and the width of the data line 6a in the conventional example are the same W1. In this embodiment, the base light-shielding film 11
The interlayer distance between a and the light-shielding conductive film 90a is D1, while in the conventional example, the interlayer distance between the underlying light-shielding film 11a and the data line 6a is D2. Here, when the interlayer distance between the base light-shielding film 11a and the data line 6a in the present embodiment is D2, the relationship of D1> D2 is satisfied. Therefore, the incident light L1
Are incident at the same angle, the angle of the incident light L1 has a margin in this embodiment because the interlayer distance to the underlying light shielding film 11a is short. That is, if the margin angle of the incident light L1 in this embodiment is R1 and the margin angle of the incident light L1 in the conventional example is R2,
R1> R2. From this result, the liquid crystal device of the present embodiment has a margin in the incident angle of the incident light, which is advantageous because it can cope with the future reduction in the size of the optical system and a further increase in the incident angle. . In the present embodiment, it is also possible to form a light-shielding film on the side surface of the semiconductor layer 1a via an insulating film, and it is possible to further improve the response to the incident angle.

Further, in the liquid crystal device of the present embodiment, it is not necessary to shield the data line 6a from the light unlike the conventional example, and therefore the width W of the data line 6a in the channel region and its adjacent region is reduced.
4 can be made shorter than the width W1 of the light-shielding conductive film 90a. That is, the relationship of W1> W4 is established, and the data line 6a is formed so as not to protrude from the light-shielding conductive film 90a in the channel region and its adjacent region. This can prevent light reflected by the data line 6a from becoming stray light and irradiating the semiconductor layer 1a. In particular, the light-shielding conductive film 90a can be formed of a film containing a refractory metal having a reflectance lower than that of Al forming the data line 6a. It is also possible to absorb with.

Further, in the liquid crystal device of this embodiment, since the relay film 80a can be formed below the light-shielding conductive film 90a, the semiconductor film 1a is formed by the relay film 80a.
Can be shielded in the immediate vicinity, and the light shielding property is improved. In this case, the width of the relay film 80a is equal to the width W of the light-shielding conductive film 90a.
When it is set to be substantially the same as 1, the light shielding property is further improved. If the reflected light L2 is incident from the TFT array substrate 10 side, the conventional example uses the data line 6a having a high reflectance as a light-shielding film. Although there is a risk of irradiation of 1a, in the present embodiment, the relay film 80a is made of a polysilicon film or a film containing a low-reflecting refractory metal to absorb light. As a result, the stray light reflected on the inner surface can be significantly reduced, and there is no need to worry about deterioration of image quality display due to leakage of the TFT 30. Further, by forming the relay film 80a with a low-reflecting film, the light-shielding conductive film 90a may be formed with a film containing at least the same highly reflective Al as the data line 6a. As described above, the data line 6a and the light-shielding conductive film 90a can be formed of a film containing at least a high-reflectance Al having a reflectance of 80% or more in the visible light region in the light-shielding region of the liquid crystal device. As a result, the incident light can be reflected by the data line 6a and the light-shielding conductive film 90a to prevent the temperature rise of the liquid crystal device. Therefore, in the liquid crystal device according to the present embodiment, for example, it is possible to reduce the cost for developing a projector cooling device and improve the light resistance of the liquid crystal device.

In the present embodiment described above, the surface of the interlayer insulating film 7 under the pixel electrode 9a is flattened. This is to prevent the disclination of the liquid crystal due to the step difference of the wiring or the element, and may be performed to the interlayer insulating film 4 and the like further below. Here, as the flattening process, an organic or inorganic SOG (Silicon On Glass) film may be applied by a spin coater, or the CMP process may be performed to achieve the flattening process.

(Second Embodiment) The configuration of the second embodiment of the electro-optical device of the present invention will be described with reference to FIGS. 12 to 16.

A liquid crystal device, which is an example of an electro-optical device, must generally be subjected to AC inversion driving in order to prevent deterioration of the liquid crystal. Therefore, although some driving methods have been proposed, in the liquid crystal device according to the second embodiment of the present invention, as shown in FIG.
As shown in FIG. 3, the polarity of the image signal applied to the liquid crystal is inverted for each scanning line 3a, and in addition, the polarity of the image signal is inverted for each field. As a result, the direct current component applied to the liquid crystal can be suppressed as much as possible, and the occurrence of flicker can be significantly reduced. In this way, when the polarity of the image signal is inverted for each scanning line 3a, the scanning line 3a
Since the image signals of the same polarity are written in the pixel electrodes 9a adjacent to each other along the X direction, an electric field is not generated between the adjacent pixel electrodes 9a. On the other hand, since image signals of different polarities are written in the pixel electrodes 9a adjacent to each other along the data line 6a in the Y direction, an electric field is generated between the adjacent pixel electrodes 9a, and liquid crystal disclination 4 is generated.
00 occurs.

Therefore, in order to minimize the generation region of the disclination 400 in FIG. 12, in the second embodiment of the present invention, as shown in FIG. 13, a plurality of pixel groups adjacent to each other on the TFT array substrate are arranged. Is a groove 10 ′ with respect to the TFT array substrate 10 in the diagonally right upward area.
Are formed, and wirings such as the data line 6a and the TFT 30 are partially embedded and planarized. When the rubbing process is performed on the TFT array substrate in the direction of the arrow, the region where the disclination 400 is generated is further increased by not providing the groove 10 ′ in the region of the scanning line 3 a in contact with the opening region. It can be reduced. Thereby, the light leakage area of each pixel is reduced, and the pixel aperture ratio can be significantly improved. In particular, it is most suitable for a liquid crystal device for a projector which requires brightness and a small size.

FIG. 14 is a sectional view taken along the line AA 'in FIG. As shown in FIG. 14, the groove 10 ′ is formed in the TFT array substrate 10 in the region where the TFT 30 and the storage capacitor 70 are formed.
By forming, the pixel electrode 9a and the alignment film 16 can be formed substantially flat. The groove 10 'can be easily formed by photolithography and etching which are commonly used in pattern formation. Further, the taper angle of the side wall of the groove 10 'can be variously controlled by making full use of the dry etching method and the wet etching method. Further, the control of the depth of the groove 10 'is important for the planarization after forming the groove 10', but it can be easily controlled by the time management of dry etching or the like. As described above, when the groove 10 'is formed and flattened, the flattening can be realized without using any organic film or the like that is easily exposed to light, and thus the liquid crystal used in the projector using a strong light source. The device is particularly advantageous.

FIG. 15 is a sectional view taken along line BB ′ of FIG. 13, showing pixel electrodes 9a adjacent to each other in the X direction in FIG.
The cross-sectional structure between them is shown. In this way, the TFT array substrate 1
By forming the groove 10 ′ in 0, the formation region of the data line 6 a can be almost completely flattened. In particular, FIG.
When the rubbing process is performed along the data line 6a as shown in FIG. 6, the region where the data line 6a and the like are formed is buried and flattened. Nation never occurs.

FIG. 16 is a sectional view taken along the line CC ′ of FIG. 13, showing pixel electrodes 9a adjacent to each other in the Y direction in FIG.
The cross-sectional structure between them is shown. In this area, liquid crystal disclination occurs due to the electric field between the adjacent pixel electrodes 9a, so that as shown in FIG.
In the divided area, the groove 10 'is not formed in the TFT array substrate 10 in the formation area of the scanning line 3a so that the cell gap of the liquid crystal layer 50 becomes narrow. As a result, even if an electric field is generated between the pixel electrodes 9a adjacent to each other, the electric field between the counter electrode 21 provided on the counter substrate 20 and the pixel electrode 9a is strengthened, so that the region where liquid crystal disclination occurs is minimized. It can be made smaller.
Further, since it is not necessary to narrow the cell gap of the liquid crystal itself to reduce the disclination, various problems such as difficulty in developing the liquid crystal for the narrow cell gap and controlling the cell gap do not occur.

As described above, in the second embodiment of the present invention,
Since the groove 10 ′ is formed on the TFT array substrate 10 and the wiring and the element can be embedded therein almost completely or partially, compared with the case where the groove can be flattened only completely like the CMP process, It is possible to realize an electro-optical device including pixels with a higher aperture ratio. The groove 10 'is T
Similar effects can be obtained by forming an interlayer insulating film such as the base insulating film 12 and the interlayer insulating film 81 in addition to the FT array substrate 10. In addition, the groove 1 provided in the TFT array substrate 10
It is needless to say that 0'and a groove provided in the interlayer insulating film such as the base insulating film 12 or the interlayer insulating film 81 may be combined for flattening.

(Third Embodiment) FIG. 1 shows the configuration of a liquid crystal device which is a third embodiment of the electro-optical device according to the present invention.
This will be described with reference to FIGS. 17 is a plan view of a plurality of pixel groups adjacent to each other on a TFT array substrate on which data lines, scanning lines, pixel electrodes and the like are formed, and FIG.
FIG. 18 is a cross-sectional view taken along the line AA ′ of FIG. 17. In FIG. 18, the scales of the layers and members are different from each other in order to make the layers and members recognizable in the drawing.

As shown in FIG. 17, in the third embodiment,
Auxiliary wiring 3 formed of the same film as the scanning line 3a and also serving as the capacitive electrode 3b
The formation of b'is very different from that of the first embodiment. Further, the auxiliary wiring 3b ′ can be extended from the image display area to the periphery thereof along the direction of the scanning line 3a and can be connected to the constant potential source in the peripheral area. As the constant potential source, a negative power source, a constant potential source such as a positive power source, which is supplied to a peripheral circuit (for example, a scanning line driving circuit, a data line driving circuit, etc.) for driving the liquid crystal device described later, a ground power source, A constant potential source or the like supplied to the counter electrode can be cited, and the light-shielding conductive film 90 is included.
It is preferably the same as the potential supplied to a. Thereby, the auxiliary wiring 3b 'can function as a part of the capacitance line 300 in FIG. Also, the data line 6a
It is also possible to electrically connect to the upper light-shielding conductive film 90a through the contact hole 95 below. At this time, the connection between the auxiliary wiring 3b ′ and the light-shielding conductive film 90a via the contact hole 95 may be performed for each pixel electrode 9a or for each of the plurality of pixel electrodes 9a. In this way, the auxiliary wiring 3b ′ and the light-shielding conductive film 9 are formed.
With 0a, the capacity line 300 having a redundant structure can be constructed. In addition, also in the first and second embodiments, when there is a margin in the light-shielding region, the capacitor electrode 3b is extended and the auxiliary wiring 3 is formed.
It goes without saying that b'may be constructed.

Further, in the third embodiment, as shown in FIG. 17, the relay film 80a 'shown by a diagonal line rising to the right is formed so as not to overlap the scanning line 3a in plan view. It is very different from the form. As shown in FIG. 18, by forming the interlayer insulating film 81 with a film thickness of 100 nm or less, a large storage capacitance can be formed on the auxiliary wiring 3b ′ including the capacitance electrode. That is, the storage capacity C2 shown in FIG. 4 can be increased. In this case, since the interlayer insulating film 81 for insulating between the scanning line 3a and the relay film 80a ′ is thinned, providing the relay film 80a ′ so as to overlap the scanning line 3a increases the parasitic capacitance, The scanning signal is delayed. In addition, the relay film 80a '
Since the TFT 30 malfunctions due to the influence of the potential applied to the relay region 80a ′, the relay film 80a ′ cannot be provided near the channel region 1a ′. However, the semiconductor layer 1a and the relay film 80
Since the interlayer insulating film 81 between a and a ′ can be formed very thin, the high-concentration drain region 1e of the semiconductor layer 1a can be formed.
And the relay film 80a 'are not penetrated through the semiconductor layer 1a at the time of opening the contact hole 8a for electrically connecting. Further, there is an advantage that the opening diameter of the contact hole 8a can be made extremely small. Further, the light-shielding conductive film 90a is formed of the interlayer insulating film 91 in order to shield the channel region 1a ′ and its adjacent region from the scanning line 3a.
Although it must be formed with a film thickness of 0 nm or more, the storage capacitor C1 shown in FIG. 4 can be formed between the auxiliary wiring 3b 'and the light-shielding conductive film 90a.

(Fourth Embodiment) FIG. 1 shows the configuration of a liquid crystal device which is a fourth embodiment of the electro-optical device according to the present invention.
9 and FIG. 20. 19 is a plan view of a plurality of pixel groups adjacent to each other on a TFT array substrate on which data lines, scanning lines, pixel electrodes, etc. are formed, and FIG.
It is sectional drawing which followed the AA 'of FIG. Note that in FIG. 20, the scales of the layers and members are made different so that the layers and members are recognizable in the drawing. The same members as those in the first embodiment are designated by the same reference numerals, and detailed description thereof will be omitted.

In the fourth embodiment, as shown in FIG. 19, the scanning line 3a and the data line 6a are provided substantially at the center of the non-opening area. The semiconductor layer 1a is arranged below the data line 6a so as to cross the scanning line 3a. As shown in FIG. 20, the data line 6a and the high-concentration source region 1d of the semiconductor layer 1a.
Are electrically connected via the contact hole 5 below the data line 6a. In addition, the high-concentration drain region 1e of the semiconductor layer 1a and the relay film 80a are connected to the data line 6.
Electrical connection is made below a through the contact hole 8a. By arranging the semiconductor layer 1a below the light-shielding data line 6a in this way, the counter substrate 2
It has an effect of preventing the semiconductor layer 1a from being directly irradiated with the light incident from the 0 side. Further, by forming the semiconductor layer 1a and the contact holes 5 and 8a in line symmetry with respect to the center line of the non-opening region in the scanning line 3a direction and the non-opening region in the data line 6a direction, the step shape is formed. This is advantageous because it can be made bilaterally symmetric with respect to each other, and there is no difference in light leakage depending on the rotation direction of the liquid crystal.

Under the semiconductor layer 1a, the base insulating film 12 is formed.
The base light-shielding film 11a is formed via the. The base light-shielding film 11a is formed in a matrix along the data line 6a direction and the scanning line 3a direction. The semiconductor layer 1a is disposed inside the base light-shielding film 11a, and has an effect of preventing the return light from the TFT array substrate 10 side from directly irradiating the semiconductor layer 1a.

The relay film 80a is made of a conductive film containing a polysilicon film or a refractory metal, and is composed of the semiconductor layer 1a and the pixel electrode 9.
Between the layers of a, it extends in a substantially T shape along the scanning lines 3a and the data lines 6a, and functions as a buffer for electrically connecting the semiconductor layer 1a and the pixel electrodes 9a. Specifically, the high-concentration drain region 1 of the semiconductor layer 1a
e and the conductive relay film 80a are electrically connected to each other in the contact hole 8a, and the relay film 80a and the pixel electrode 9a are electrically connected to each other in the contact hole 8b.
By adopting such a configuration, even when a deep contact hole is formed in the interlayer insulating film, by providing the relay film 80a having a large etching selection ratio, the relay layer 80a penetrates the semiconductor layer 1a when the contact hole is opened. You can avoid danger. The relay film 80a is similarly formed in the contact hole 5 for electrically connecting the data line 6a and the high concentration source region 1d of the semiconductor layer 1a.
The same film may be used for relaying.

Further, in the fourth embodiment, the interlayer insulating film 91 is laminated on the relay film 80a, and the light-shielding conductive film 9 is formed thereon.
0a is formed. The light-shielding conductive film 90a is extended to the outside of the image display region in the scanning line 3a direction so as to cover the relay film 80a except for the contact hole 8b, and is supplied to the scanning line driving circuit, the data line driving circuit, and the like. The potential is fixed by being electrically connected to a constant potential source such as a negative power source or a positive power source, a ground power source, or a constant potential source supplied to the counter electrode. Therefore, the relay film 80a
Can be used as one capacitance electrode and the light-shielding conductive film 90a can be used as the other capacitance electrode to form the storage capacitance C1 shown in FIGS. At this time, it goes without saying that the interlayer insulating film 91 functions as a dielectric film of the storage capacitor C1.
Here, since the interlayer insulating film 91 is laminated only to form the storage capacitor C1, the relay film 80a and the light-shielding conductive film 9 are formed.
The storage capacitance C1 can be increased by thinning the interlayer insulating film 91 to a thickness that does not cause a leak with 0a. Further, in the fourth embodiment, by forming the interlayer insulating film 81 thick, the relay film 80a can be extended to above the TFT 30 and the scanning line 3a, so that the storage capacitance C1 can be efficiently increased. Further, in the fourth embodiment, the semiconductor layer 1a is extended and the capacitance electrode is not formed. As a result, it is not necessary to form the capacitance electrode and the capacitance line for forming the storage capacitance in the same film as the scanning line 3a, so that the scanning line 3a is shielded from the conductive film 90a as shown in FIG.
Alternatively, it can be arranged at almost the center of the non-opening region defined by the base light-shielding film 11a. Further, since it is not necessary to reduce the resistance of the semiconductor layer 1a made of a polysilicon film, it is not necessary to implant an impurity in the capacitor electrode forming portion,
The number of processes can be reduced.

In the fourth embodiment, the channel region 1a 'of the TFT 30 is formed at the intersection of the scanning line 3a and the data line 6a, so that it is almost at the center of the non-opening region in the data line 6a direction and the scanning line 3a direction. Can be provided. As a result, the incident light from the counter substrate 20 side and the TFT array substrate 1
Since the position where the return light from the 0 side is not irradiated with the light is the most, the leak current of the TFT 30 due to the light can be significantly reduced.

Further, in the fourth embodiment, as shown in FIG. 19, by forming the light-shielding conductive film 90a, the relay film 80a, and the underlying light-shielding film 11a in this order in the vicinity of the channel region 1a ′, the pattern width is narrowed. It is devised so that the incident light is not directly applied to the base light-shielding film 11a. Further, by interposing the relay film 80a made of a polysilicon film between the light-shielding conductive film 90a and the semiconductor layer 1a, the reflected light on the surface of the base light-shielding film 11a and the return light from the TFT array substrate 10 side are absorbed. It is possible to have the effect of making it have an advantage in light resistance.

Further, in the fourth embodiment, the data lines 6a,
The light-shielding conductive film 90a, the underlying light-shielding film 11a, etc.
Since the non-opening region can be formed on the T array substrate 10, the light shielding film need not be provided on the counter substrate 20. This allows
When the TFT array substrate 10 and the counter substrate 20 are mechanically bonded to each other, even if the alignment is deviated, the counter substrate 2
Since there is no light-shielding film on 0, the area through which light passes (opening area) does not change. As a result, a stable pixel aperture ratio can always be obtained, and device defects can be greatly reduced.

(Overall Configuration of Electro-Optical Device) The overall configuration of the liquid crystal device in each of the above embodiments will be described with reference to FIGS. 21 and 22. Note that FIG. 21 shows T
22 is a plan view of the FT array substrate 10 together with the constituent elements formed thereon as viewed from the counter substrate 20 side.
FIG. 22 is a sectional view taken along line HH ′ of FIG. 21.

In FIG. 21, a sealing material 52 is provided along the edge of the counter substrate 20 on the TFT array substrate 10 on which elements and wirings are formed. A light-shielding frame 53 for defining the periphery is provided. The frame 53 may be provided on the TFT array substrate 10 side as in the present embodiment, or may be provided on the counter substrate 20 side. In a region outside the sealing material 52, a data line driving circuit 101 and an external circuit connecting terminal 102 for supplying an image signal to the data line 6a at a predetermined timing are provided along one side of the TFT array substrate 10. A scanning line driving circuit 104 for supplying a scanning signal to the scanning line 3a at a predetermined timing is provided along two sides adjacent to this one side. It goes without saying that the scanning line driving circuit 104 may be provided on only one side if the delay of the scanning signal supplied to the scanning line 3a does not matter. Further, the data line driving circuits 101 may be arranged on both sides along the side of the image display area. Further, on the remaining one side of the TFT array substrate 10, a plurality of wirings 105 for supplying a common signal are provided between the scanning line driving circuits 104 provided on both sides of the image display area. In addition, the counter substrate 2
At least one position of the corner portion of 0 is provided with a vertical conductive material 106 for electrically connecting the TFT array substrate 10 and the counter substrate 20. That is, the counter electrode potential applied from the external circuit connection terminal 102 is
The counter electrode 2 provided on the counter substrate 20 via the wiring provided on the TFT array substrate 10 and the vertical conducting material 106.
1 is supplied. Then, as shown in FIG. 22, the counter substrate 20 is fixed to the TFT array substrate 10 by the sealing material 52. On the TFT array substrate 10, in addition to the data line driving circuit 101, the scanning line driving circuit 104, etc., a sampling circuit that supplies an image signal to a plurality of data lines 6a at a predetermined timing, a plurality of data lines. 6
Even if a precharge circuit for supplying a precharge signal of a predetermined voltage level to a is supplied respectively to the image signal a, an inspection circuit for inspecting the quality, defects, etc. of the liquid crystal device during manufacturing or shipping, good. As described above, in the liquid crystal device according to the present embodiment, the TF for controlling the pixel electrode 9a is used.
Since the peripheral circuits such as the data line driving circuit 101 and the scanning line driving circuit 102 can be formed on the same TFT array substrate 10 in the step of forming T30, a high-definition and high-density liquid crystal device can be realized. You can

Further, instead of providing the data line driving circuit 101 and the scanning line driving circuit 104 on the TFT array substrate 10, for example, a driving LSI mounted on a TAB (Tape Automated Bonding) substrate is provided with the TFT array substrate 10. You may make it electrically and mechanically connect through the anisotropic conductive film provided in the peripheral part. Further, the side of the counter substrate 20 on which the projection light enters and the TFT array substrate 10
On the side from which the emitted light is emitted, for example, TN mode,
VA (Vertically Aligned) mode, PDLC (Polymer D)
A polarizing film, a retardation film, a polarizing plate, etc. may be arranged in a predetermined direction depending on the operation mode such as ispersed Liquid Crystal) mode and the normally white mode / normally black mode.

Since the liquid crystal device in each of the embodiments described above is applied to a color display projector, three liquid crystal devices are respectively used as light valves for R (red) G (green) B (blue). The light of each color separated through the dichroic mirror for RGB color separation enters the respective light valves as projection light. Therefore, in each embodiment, the counter substrate 20 is not provided with a color filter. However, an RGB color filter is provided in a predetermined area facing the pixel electrode 9a together with its protective film,
It may be formed on the counter substrate 20. Alternatively, the pixel electrode 9a facing the RGB on the TFT array substrate 10
It is also possible to form a color filter layer below with a color resist or the like. With this configuration, the liquid crystal device according to each embodiment can be applied to a liquid crystal device for color display such as a direct-view type or a reflection type color liquid crystal television other than the projector. Further, microlenses may be formed on the counter substrate 20 so as to correspond to each pixel. By forming the microlens in this way, the efficiency of collecting incident light can be significantly improved, and a bright liquid crystal device can be realized. Furthermore, a dichroic filter that produces RGB colors may be formed by using interference of light by depositing a number of interference layers having different refractive indexes on the counter substrate 20. This counter substrate with a dichroic filter can realize a brighter liquid crystal display device.

In the liquid crystal device in each of the embodiments described above, incident light is made to enter from the counter substrate 20 side as in the conventional case, but the base light-shielding film 11a and the light-shielding conductive film 90a are provided in the TFT array. Since it is provided on the substrate 10, light may be incident from the TFT array substrate 10 side and emitted from the counter substrate 20 side. Also, TF
There is no need to separately arrange a polarizing plate coated with an AR (Anti Reflection) coating for preventing reflection on the back surface side of the T array substrate 10 or to attach an AR film,
The material cost can be reduced by that much, and the yield is not significantly reduced due to dust, scratches, etc. when the polarizing plate is attached, which is very advantageous. Further, since the light resistance is excellent, even if a light source is used or polarization conversion is performed by a polarization beam splitter to improve light utilization efficiency, deterioration of image quality such as crosstalk due to light does not occur. Further, in the present embodiment, the conductive film 90a is formed to have a light-shielding property, but when another film having a light-shielding property is formed with respect to the incidence of light from the counter substrate side, the conductive film 90a is shielded from light. May not form due to sex. Even if the conductive film 90a does not have a light-shielding property, the structure of this embodiment can increase the storage capacitance.

The switching element provided in each pixel has been described as a positive stagger type or coplanar type polysilicon TFT, but it is an inverse stagger type TFT.
The respective embodiments are also effective for other types of TFTs such as and amorphous silicon TFTs.

The electro-optical device of the present invention is not limited to the above-described embodiments, but can be appropriately modified within the scope of the gist or concept of the invention which can be read from the claims and the entire specification. An electro-optical device with various modifications is also included in the technical scope of the present invention.

[Brief description of drawings]

FIG. 1 is an equivalent circuit diagram of various elements, wirings, and the like provided in a plurality of pixels in a matrix forming an image display area in an electro-optical device according to a first embodiment of the present invention.

FIG. 2 is a plan view of a plurality of pixel groups adjacent to each other on a TFT array substrate on which data lines, scanning lines, pixel electrodes and the like are formed in the electro-optical device according to the first embodiment.

3 is a cross-sectional view taken along the line A-A 'of FIG.

FIG. 4 is a view showing the configuration 1 of the electro-optical device according to the embodiment of the invention.
It is an equivalent circuit diagram of a pixel.

FIG. 5 is a plan view showing a light-shielding conductive film and a relay film of FIG.

FIG. 6 is a plan view of the relay film and the second capacitor electrode extracted from FIG.

FIG. 7 is a plan view showing a second capacitor electrode and a semiconductor layer of FIG. 2 in an extracted manner.

FIG. 8 is a plan view showing a semiconductor layer and a base light-shielding film extracted from FIG.

FIG. 9 is a plan view showing a light-shielding conductive film and a pixel electrode of FIG.

10 is a base light-shielding film, a light-shielding conductive film in FIG.
It is a top view which extracts and shows a relay film and a data line.

11 is a sectional view taken along the line BB ′ of FIG.
(2) is a sectional view of a conventional example.

FIG. 12 is a schematic diagram showing polarities of image signals supplied to a plurality of pixel electrodes in a matrix forming an image display area in the electro-optical device according to the second embodiment of the invention.

FIG. 13 is a plan view of a plurality of pixel groups adjacent to each other on a TFT array substrate on which data lines, scanning lines, pixel electrodes and the like are formed in the electro-optical device according to the second embodiment.

FIG. 14 is a cross-sectional view taken along the line A-A ′ in FIG.

FIG. 15 is a cross-sectional view taken along line B-B ′ of FIG.

16 is a cross-sectional view taken along the line C-C ′ of FIG.

FIG. 17 is a plan view of a plurality of pixel groups adjacent to each other on a TFT array substrate on which data lines, scanning lines, pixel electrodes and the like are formed in the electro-optical device according to the third embodiment.

18 is a cross-sectional view taken along the line A-A ′ of FIG.

FIG. 19 is a plan view of a plurality of pixel groups adjacent to each other on a TFT array substrate on which data lines, scanning lines, pixel electrodes and the like are formed in the electro-optical device according to the fourth embodiment.

20 is a cross-sectional view taken along the line AA ′ of FIG.

FIG. 21 is a plan view of the TFT array substrate in the liquid crystal device of each of the embodiments, together with the respective components formed thereon, as viewed from the counter substrate side.

FIG. 22 is a cross-sectional view taken along the line H-H ′ of FIG. 21.

[Explanation of symbols]

1a ... semiconductor layer 1a '... Channel region 1b ... Low concentration source region 1c ... low concentration drain region 1d ... High-concentration source region 1e ... high-concentration drain region 1f ... first capacitance electrode 2 ... Gate insulating film 3a ... scanning line 3b ... second capacitance electrode 4 ... Third interlayer insulating film 5 ... Contact hole 6a ... Data line 7 ... Fourth interlayer insulating film 8a ... Contact hole 8b ... Contact hole 9a ... Pixel electrode 10 ... TFT array substrate 11a ... Base light-shielding film 12 ... Base insulating film 16 ... Alignment film 20 ... Counter substrate 21 ... Counter electrode 22 ... Alignment film 30 ... TFT 50 ... Liquid crystal layer 70 ... Storage capacity 80a, 80a '... Relay film 81 ... First interlayer insulating film 90a ... Conductive film with light shielding property 91 ... Second interlayer insulating film 95 ... Contact hole 101 ... Data line drive circuit 104 ... Scan line drive circuit

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Claims (24)

(57) [Claims] 1. A scanning line on a substrate and a scanning line intersecting with the scanning line.
And data lines that correspond to intersections of the data lines and the scan lines
An electro-optical device having a thin film transistor provided in a thin film transistor and a pixel electrode provided corresponding to the thin film transistor, wherein a scanning line is arranged on a channel region of the thin film transistor through a gate insulating film, The light-shielding conductive film forming the capacitance electrode of the capacitance is arranged so as to cover at least the channel region of the thin film transistor and above the scanning line ,
The data lines are made of a light-shielding conductive film and are arranged below the lines.
An electro-optical device, which is arranged so as to cover the channel region of the transistor . 2. The conductive film covers at least a part of a channel region of the thin film transistor, a junction region between the source / drain region of the thin film transistor and the channel region, and a source / drain region adjacent to the junction region. The electro-optical device according to claim 1. 3. The storage capacitor electrically connects the first conductive film forming one capacitance electrode, the semiconductor layer forming the drain region and the pixel electrode, and the other capacitance electrode of the storage capacitor. The conductive film is formed of a second conductive film.
Is at least one of the first conductive film and the second conductive film
The electro-optical device according to claim 1 or claim 2, characterized in that. 4. The first conductive film is made of a light-shielding conductive film.
And the first conductive film covers the channel region,
4. The electro-optical device according to claim 3 , wherein the data line is formed so as not to protrude from the first conductive film in a plan view on the channel region and its adjacent region. Wherein said second conductive film, also claim 3, characterized in that it consists of a lower film reflectance than the data line
Is an electro-optical device according to claim 4 . Wherein wherein the first conductive film and the data line, characterized by comprising a film containing at least Al
The electro-optical device according to any one of claims 3 to 5 . 7. A base light-shielding film is disposed below the semiconductor layer on the substrate, the base light-shielding film covers at least the channel region when viewed from the opposite side of the substrate, and the channel region. and 請 that in its proximal region, characterized in that it is formed as the underlying light-shielding film in a plan view is not protrude than the first conductive film
The electro-optical device according to any one of claims 3 to 6 . 8. The first conductive film is made of a light-shielding conductive film.
Ri, claim 7 and wherein the first conductive film, characterized in that at least one of made of a refractory metal of the underlying shielding film
The electro-optical device according to. 9. The first conductive film and the second conductive film are shielded.
It is made of a light conductive film, and below the data line,
9. The first conductive film and the second conductive film have substantially the same size, and the first conductive film and the second conductive film have substantially the same size .
The electro-optical device according to an item. Wherein said first conductive film claims, characterized in that said extending therearound from the pixel electrode is an image display areas arranged which are connected to a constant potential source in the peripheral region
The electro-optical device according to any one of claims 3 to 9 . 11. A thin film transistor, and a semiconductor layer of the thin film transistor electrically connected to the semiconductor layer via a first connecting portion, and a channel of the thin film transistor.
A light-shielding data line arranged to cover the region, a scanning line overlapping the semiconductor layer of the thin film transistor, a pixel electrode electrically connected to the semiconductor layer of the thin film transistor via a second connecting portion, and wherein while being arranged from the data line downward, and a first light-shielding film which is disposed in the region of the scanning lines and the data lines while avoiding the second connecting portion and the connecting portion Electro-optical device. 12. The electro-optical device according to claim 11 , wherein the light-shielding film overlaps an edge portion of the pixel electrode. 13. includes a lower light shielding film below said semiconductor layer, at least a portion of the thin film transistor characterized in that it is sandwiched between the lower shielding film and the light-shielding film according
The electro-optical device according to claim 11 or 12 . 14. The electro-optical device according to claim 13 , wherein the lower light-shielding film extends along at least one of the data line and the scanning line. 15. The electro-optical device according to claim 13, wherein at least a surface of the lower light shielding film facing the thin film transistor side is formed of an antireflection film. 16. Furthermore, the electro-optic according to any one of claims 11 to 15, characterized in that it has the semiconductor layer and the pixel electrode and the conductive relay layer forming an electrical connection apparatus. 17. The relay layer, wherein, characterized in that to avoid the first connecting portion for connecting the data line and the semiconductor layer are arranged in the region of the scanning lines and the data lines Item 16. The electro-optical device according to Item 16 . 18. The relay layer, claim 16 or claim wherein said light shielding film is arranged in the region of the second connecting portion between the semiconductor layer and the pixel electrode to avoid
Item 17. The electro-optical device according to Item 17 . 19. The data line and to form a gap between the pixel electrode, claims 11 to the light-shielding film is characterized by being arranged in the region of the gap 18
The electro-optical device according to claim 1. 20. The electricity according to claim 19 , wherein the data line is arranged in a region of the first connection portion between the semiconductor layer and the data line, which is avoided by the light shielding film. Optical device. 21. A non-pixel aperture region claim, characterized in that formed between the shielding film and the lower light-shielding film 13
The electro-optical device according to. 22. The electro-optical device according to claim 21 , wherein the scanning line extends substantially at the center of the non-pixel opening region. In near containing 23. channel region of the thin film transistor, wherein said there is the relay layer in the inner region of the light-shielding film, wherein the lower light shielding film to the inner region of the relay layer is present Item 16. The electro-optical device according to Item 16 . 24. The electro-optical device according to claim 16 , wherein the semiconductor layer is located in a region inside the data line.