JP3422936B2 - Lead frame and manufacturing method thereof - Google Patents
Lead frame and manufacturing method thereofInfo
- Publication number
- JP3422936B2 JP3422936B2 JP20354798A JP20354798A JP3422936B2 JP 3422936 B2 JP3422936 B2 JP 3422936B2 JP 20354798 A JP20354798 A JP 20354798A JP 20354798 A JP20354798 A JP 20354798A JP 3422936 B2 JP3422936 B2 JP 3422936B2
- Authority
- JP
- Japan
- Prior art keywords
- die pad
- recess
- semiconductor element
- pad portion
- sealing resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/32257—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic the layer connector connecting to a bonding area disposed in a recess of the surface of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Punching Or Piercing (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Lead Frames For Integrated Circuits (AREA)
Description
【０００１】[0001]
【発明の属する技術分野】本発明はリードフレーム及び
その製造方法に関し、更に詳細にはサポートバーに連結
されているダイパッド部の一面側が半導体素子の搭載面
であり、且つ前記ダイパッド部の他面側の少なくとも一
部が、前記半導体素子を搭載したダイパッド部を樹脂封
止したとき、封止樹脂の表面と実質的に同一平面を形成
する露出面となるリードフレーム及びその製造方法に関
する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a lead frame and a method for manufacturing the same, and more particularly, one surface of a die pad portion connected to a support bar is a semiconductor element mounting surface, and the other surface of the die pad portion is the same. Relates to a lead frame, at least a part of which serves as an exposed surface that forms substantially the same plane as the surface of the sealing resin when the die pad portion on which the semiconductor element is mounted is resin-sealed, and a method for manufacturing the same.
【０００２】[0002]
【従来の技術】半導体装置に用いられるリードフレーム
では、通常、図７に示す様に、半導体素子が搭載される
ダイパッド部１００は、複数本のインナーリード１０
６、１０６・・によって囲まれ、且つレール部１０４、
１０４から延出されているサポートバー１０２、１０２
・・によって連結されている。かかる図７に示すリード
フレームを用いた半導体装置では、図８に示す如く、ダ
イパッド部１００がインナーリード１０６、１０６・・
よりも下方に位置するように、サポートバー１０２、１
０２・・がダイパッド部１００の直近で曲折されてい
る。このダイパッド部１００の一面側に搭載した半導体
素子１０８は、インナーリード１０６の各先端部とをワ
イヤ１１０、１１０によって接続されている。かかる半
導体素子１０８やサポートバー１０２等は、封止樹脂１
１２によって封止されて半導体装置を形成している。図
８に示す半導体装置では、半導体装置の放熱性を向上す
べく、ダイパッド部１００の裏面となる他面側が封止樹
脂１１２の表面と実質的に同一平面を形成する露出面と
なっている。2. Description of the Related Art In a lead frame used for a semiconductor device, as shown in FIG. 7, a die pad portion 100 on which a semiconductor element is mounted usually has a plurality of inner leads 10.
Surrounded by the rails 104,
Support bars 102, 102 extended from 104
.. are connected by. In the semiconductor device using the lead frame shown in FIG. 7, the die pad portion 100 has inner leads 106, 106 ...
Support bars 102, 1 so that they are located below
02 ... is bent near the die pad portion 100. The semiconductor element 108 mounted on the one surface side of the die pad portion 100 is connected to each tip portion of the inner lead 106 by wires 110 and 110. The semiconductor element 108, the support bar 102, and the like are formed of the sealing resin 1
It is sealed by 12 to form a semiconductor device. In the semiconductor device shown in FIG. 8, the other surface, which is the back surface of the die pad portion 100, is an exposed surface that forms substantially the same plane as the front surface of the sealing resin 112 in order to improve the heat dissipation of the semiconductor device.
【０００３】[0003]
【発明が解決しようとする課題】図８に示す半導体装置
では、ダイパッド部１００の他面側も封止樹脂１１２に
よって覆われて成る半導体装置に比較して放熱性を向上
できるものの、ダイパッド部１００の他面側が露出面で
あるため、ダイパッド部１００の周縁と封止樹脂１１２
との境界から水分が半導体装置１１２内に侵入し易いこ
とが判明した。また、リードフレームのダイパッド部１
００に搭載した半導体素子１０８等を樹脂封止する際
に、ダイパッド部１００の他面側に封止樹脂が漏れ出し
易いこと、特にサポートバー１０２とダイパッド部１０
０との境界近傍から封止樹脂がダイパッド部１００の他
面側に漏れ出し易いことが判明した。かかる封止樹脂１
１２内への水分の侵入は、半導体装置の信頼性を損なう
現象であり、ダイパッド部１００の他面側への封止樹脂
の漏れ出しは、得られる半導体装置の外観及び放熱性を
低下させる現象であるため、これらの現象を可及的に防
止することが要請されている。そこで、本発明の課題
は、半導体装置を形成する封止樹脂内への水分の侵入、
及びダイパッド部に搭載した半導体素子等を樹脂封止す
る際に、露出面であるダイパッド部の他面側への封止樹
脂の漏れ出しを可及的に防止し得るリードフレーム及び
その製造方法を提供することにある。In the semiconductor device shown in FIG. 8, although the heat radiation performance can be improved as compared with the semiconductor device in which the other surface side of the die pad portion 100 is also covered with the sealing resin 112, the die pad portion 100 is provided. Since the other surface side is the exposed surface, the periphery of the die pad portion 100 and the sealing resin 112 are
It was found from the boundary between and that water easily enters the semiconductor device 112. In addition, the die pad portion 1 of the lead frame
When the semiconductor element 108 or the like mounted on the No. 00 is resin-sealed, the sealing resin easily leaks to the other surface side of the die pad 100, and particularly the support bar 102 and the die pad 10
It was found that the sealing resin easily leaked from the vicinity of the boundary with 0 to the other surface side of the die pad portion 100. Such sealing resin 1
The intrusion of water into the inside 12 is a phenomenon that impairs the reliability of the semiconductor device, and the leakage of the sealing resin to the other surface side of the die pad portion 100 reduces the appearance and heat dissipation of the obtained semiconductor device. Therefore, it is required to prevent these phenomena as much as possible. Therefore, an object of the present invention is to allow moisture to enter the sealing resin forming the semiconductor device,
And a lead frame capable of preventing leakage of the sealing resin to the other surface side of the die pad portion which is an exposed surface as much as possible when resin-sealing a semiconductor element mounted on the die pad portion, and a manufacturing method thereof. To provide.
【０００４】[0004]
【課題を解決するための手段】本発明者等は、前記課題
を解決すべく、先ず、図８に示す半導体装置において、
リードフレームのダイパッド部１００に搭載した半導体
素子１０８等を樹脂封止する際に、サポートバー１０２
とダイパッド部１００との境界近傍から封止樹脂が漏れ
出し易い現象について検討したところ、図９に示す如
く、サポートバー１０２とダイパッド部１００との境界
近傍、すなわちサポートバー１０２の曲折部から成る角
部が、その外側面が曲面状に形成されている曲面状の角
部となっていること、及びこの曲面状の角部から封止樹
脂がダイパッド部１００の露出面内に漏れ出し易くなっ
ていることが判明した。かかるサポートバー１０２の曲
折は、通常、プレス加工によって行われるが、曲折部の
外側面を内側面と同等以上の角張った角部（以下、シャ
ープな角部と称することがある）に形成することは極め
て困難である。このため、本発明者等は、サポートバー
１０２とダイパッド部１００との境界近傍に形成され
た、サポートバー１０２の曲折部から成る角部を封止樹
脂内に封止する位置とすることによって、サポートバー
の角部が曲面状であっても、ダイパッド部の露出面内に
封止樹脂の漏れ出しに関与しないこと、及びダイパッド
部の一面側に形成した凹部の底面に半導体素子を搭載す
ることによって、ダイパッド部と封止樹脂との境界から
侵入する水分の侵入経路を複雑化でき、水分の侵入を可
及的に防止し得ることを知り、本発明に到達した。In order to solve the above-mentioned problems, the inventors of the present invention first set out in the semiconductor device shown in FIG.
When the semiconductor element 108 etc. mounted on the die pad portion 100 of the lead frame is resin-sealed, the support bar 102
As a result of studying a phenomenon in which the sealing resin easily leaks from the vicinity of the boundary between the die pad 100 and the die pad portion 100, as shown in FIG. 9, a corner formed by the bent portion of the support bar 102 near the boundary between the support bar 102 and the die pad portion 100 is examined. That the outer surface is a curved corner portion, and that the sealing resin easily leaks into the exposed surface of the die pad portion 100 from the curved corner portion. It turned out that Bending of such support bar 102, which is usually done by pressing, is formed on the inner surface and equal or angulated corners the outer surface of the bent portion (hereinafter, it is Ru Oh termed sharp corners) Is extremely difficult. Therefore, the present inventors set the corner formed by the bent portion of the support bar 102, which is formed in the vicinity of the boundary between the support bar 102 and the die pad portion 100, to a position where it is sealed in the sealing resin. Even if the corners of the support bar are curved, they do not contribute to the leakage of the sealing resin into the exposed surface of the die pad, and the semiconductor element is mounted on the bottom surface of the recess formed on one side of the die pad. According to the present invention, the inventor has found that it is possible to complicate the entry path of water entering from the boundary between the die pad portion and the sealing resin and prevent the entry of water as much as possible.
【０００５】すなわち、本発明は、サポートバーに連結
されているダイパッド部の一面側が半導体素子の搭載面
であり、且つ前記ダイパッド部の他面側の少なくとも一
部が、前記半導体素子を搭載したダイパッド部を樹脂封
止したとき、封止樹脂の表面と実質的に同一平面を形成
する露出面となるリードフレームにおいて、該半導体素
子が接合される接合面積よりも広い開口面積の凹部が前
記ダイパッドの一面側に開口されていると共に、前記凹
部を形成する底部の一部がダイパッド部の他面側から突
出する突出部に形成され、前記凹部の底面に対応する前
記突出部の外側端面が、前記凹部の開口面積と等しく且
つ前記封止樹脂の表面と実質的に同一平面となる露出面
であり、前記樹脂封止の際に、前記露出面への封止樹脂
の漏れ出しを防止し得るように、前記突出部の外側端面
の外周縁が、面取りによって傾斜面に形成されて、角張
った角部に形成されていることを特徴とするリードフレ
ームにある。That is, according to the present invention, one surface side of the die pad portion connected to the support bar is a semiconductor element mounting surface, and at least a part of the other surface side of the die pad portion is a die pad on which the semiconductor element is mounted. When the portion is resin-sealed, in the lead frame, which becomes an exposed surface forming substantially the same plane as the surface of the sealing resin, the recess of the die pad has an opening area wider than the bonding area to which the semiconductor element is bonded. While being opened to the one surface side, a part of the bottom portion forming the recess is formed on a protrusion protruding from the other surface of the die pad portion, and the outer end surface of the protrusion corresponding to the bottom surface of the recess is a exposed surface composed of a surface substantially flush of equal and the sealing resin and the opening area of the recess, when the previous SL resin sealing, preventing the leakage of the sealing resin to the exposed face As can be, the outer end surface of the projecting portion
The lead frame is characterized in that the outer peripheral edge thereof is chamfered to form an inclined surface to form an angular corner portion.
【０００６】また、本発明は、サポートバーに連結され
ているダイパッド部の一面側が半導体素子の搭載面であ
り、且つ前記ダイパッド部の他面側の少なくとも一部
が、前記半導体素子を搭載したダイパッド部を樹脂封止
したとき、封止樹脂の表面と実質的に同一平面を形成す
る露出面となるリードフレームをプレス加工により製造
する際に、該ダイパッド部の一面側に、抜き方向に突出
させた抜き部の抜き落としを途中で停止する半抜き加工
を施すことによって、前記半導体素子が搭載される搭載
面積よりも広い開口面積の凹部を形成すると共に、前記
凹部の底部の一部をダイパッド部の他面側から突出して
突出部を形成し、前記凹部の底面に対応する突出部の外
側端面を前記凹部の開口面積と等しい面積に形成した
後、前記ダイパッド部の他面側に突出する突出部の外側
端面を、前記半抜き加工の抜き方向に対して反対側の方
向に押し戻すプッシュバック加工を施すことを特徴とす
るリードフレームの製造方法にある。かかる本発明にお
いて、半抜き加工の際に、ダイパッド部の他面側に突出
する突出部の外側端面の外周縁を傾斜面に形成する面取
りを施すことによって、突出部の外側端面の外周縁を形
成する角部を更にシャープな角部に形成できる。尚、本
発明において言う「実質的に同一平面」とは、封止樹脂
の表面と露出面を形成するダイパッド部の露出面となる
部分との間に、封止樹脂の表面張力によって形成される
程度の段差が形成されてもよいことを意味する。Further, according to the present invention, one surface side of the die pad portion connected to the support bar is a semiconductor element mounting surface, and at least a part of the other surface side of the die pad portion is a die pad on which the semiconductor element is mounted. When a lead frame, which is an exposed surface that forms substantially the same plane as the surface of the encapsulating resin when the part is resin-sealed, is manufactured by press working, it is made to protrude in one direction on the one surface side of the die pad part. By performing a half blanking process that stops the pulling out of the punched portion on the way, a concave portion having an opening area larger than the mounting area on which the semiconductor element is mounted is formed, and a part of the bottom portion of the concave portion is formed on the die pad portion. The protrusion is formed by protruding from the other surface side, and the outer end surface of the protrusion corresponding to the bottom surface of the recess is formed to have an area equal to the opening area of the recess .
After the outside of the protrusion that protrudes to the other surface side of the die pad portion
The end face should be on the opposite side to the drawing direction of the half blanking.
A lead frame manufacturing method is characterized in that pushback processing for pushing back in a direction is performed . In the present invention, during half blanking, by chamfering the outer peripheral edge of the outer end surface of the protrusion protruding to the other surface side of the die pad portion to form an inclined surface, the outer peripheral edge of the outer end surface of the protrusion is The corners to be formed can be formed into sharper corners. The term "substantially the same plane" as used in the present invention means that the surface tension of the sealing resin is formed between the surface of the sealing resin and the exposed surface of the die pad forming the exposed surface. This means that a certain level difference may be formed.
【０００７】本発明によって得られたリードフレームを
用いた半導体装置によれば、ダイパッド部に形成された
凹部によって、ダイパッド部の他面側に段差部が形成さ
れるため、封止樹脂とダイパッド部との境界に沿う水分
の侵入経路を複雑化でき、両者の境界から侵入する水分
を可及的に防止できる。また、封止樹脂とダイパッド部
の露出面との境界となるダイパッド部に形成された凹部
の外側端面の外周縁を形成する角部をシャープな角部と
することができ、ダイパッド部の露出面への封止樹脂の
漏れ出しを防止できる。尚、サポートバーとダイパッド
部との境界近傍に形成された、サポートバーの曲折部か
ら成る角部は、封止樹脂内に封止されているため、サポ
ートバーの角部が曲面状であっても、サポートバーの曲
折部はダイパッド部の露出面への封止樹脂の漏れ出しに
は関与しなくなった。According to the semiconductor device using the lead frame obtained by the present invention, the stepped portion is formed on the other surface side of the die pad portion due to the concave portion formed in the die pad portion, so that the sealing resin and the die pad portion are formed. It is possible to complicate the water invasion route along the boundary between and, and to prevent water invading from the boundary between them as much as possible. Further, the corner portion forming the outer peripheral edge of the outer end surface of the recess formed in the die pad portion, which is the boundary between the sealing resin and the exposed surface of the die pad portion, can be a sharp corner portion, and the exposed surface of the die pad portion It is possible to prevent the sealing resin from leaking out. In addition, since the corner portion formed of the bent portion of the support bar formed near the boundary between the support bar and the die pad portion is sealed in the sealing resin, the corner portion of the support bar has a curved shape. However, the bent portion of the support bar no longer contributes to the leakage of the sealing resin to the exposed surface of the die pad portion.
【０００８】[0008]
【発明の実施の形態】本発明によって得られるリードフ
レームの一例を図１に示す。図１に示すリードフレーム
１０において、レール部１１から延出されているサポー
トバー１２、１２・・に連結されるダイパッド部１４の
周囲は、複数本のインナーリード１６、１６・・により
取り囲まれている。かかるリードフレーム１０のダイパ
ッド部１４では、半導体素子１８の搭載面には、半導体
素子１８が接合される接合面積よりも広い開口面積の凹
部２０が形成されている。この凹部２０は、ダイパッド
部１４の部分断面図である図２に示す様に、その底面が
半導体素子１８の搭載面である。かかる底面が形成され
た凹部２０の底部２２の一部は、ダイパッド部１４の他
面側から突出する突出部２５に形成されており、ダイパ
ッド部１４の他面側に段差部が形成されている。この底
部２２の厚さは、凹部２０の開口周縁部２６と等しい。
また、ダイパッド部１４の他面側から突出し且つ凹部２
０の底面に対応する突出部２５の外側端面２４（以下、
単に外側端面２４と称することがある）は、凹部２０の
開口面積と等しい。尚、突出部２５の外側端面２４は、
後述する様に、封止樹脂の表面に露出する露出面とな
る。1 shows an example of a lead frame obtained by the present invention. In the lead frame 10 shown in FIG. 1, the periphery of the die pad portion 14 connected to the support bars 12 extending from the rail portion 11 is surrounded by a plurality of inner leads 16, 16 ... There is. In the die pad portion 14 of the lead frame 10, a recess 20 having an opening area larger than the bonding area where the semiconductor element 18 is bonded is formed on the mounting surface of the semiconductor element 18. As shown in FIG. 2, which is a partial sectional view of the die pad portion 14, the bottom surface of the recess 20 is the mounting surface of the semiconductor element 18. A part of the bottom 22 of the recess 20 having such a bottom surface is formed in a protrusion 25 protruding from the other surface of the die pad portion 14, and a step portion is formed on the other surface of the die pad portion 14. . The thickness of the bottom portion 22 is equal to that of the opening peripheral edge portion 26 of the recess 20.
In addition, the concave portion 2 protrudes from the other surface side of the die pad portion 14 and
The outer end surface 24 of the protrusion 25 (hereinafter,
The outer end surface 24 may be simply referred to) as the opening area of the recess 20. The outer end surface 24 of the protruding portion 25 is
As described later, the exposed surface is exposed on the surface of the sealing resin.
【０００９】かかるダイパッド部１４の凹部２０内に半
導体素子１８が搭載されたリードフレームを用いた半導
体装置では、図３に示す様に、突出部２５の外側端面２
４は半導体装置を形成する封止樹脂２８の表面と実質的
に同一平面を形成する露出面となるように、サポートバ
ー１２、１２が曲折されている。このサポートバー１
２、１２の曲折部は、図３に示す様に、封止樹脂２８内
に封止されている。このため、この曲折部の角部が、図
９に示す如く、曲面状に形成されているものであって
も、ダイパッド部１４に搭載された半導体素子１８等を
樹脂封止した際に、封止樹脂２８の表面に露出する露出
面への封止樹脂の漏れ出しには関与しない。尚、「実質
的に同一平面」とは、封止樹脂２８の表面と露出面を形
成するダイパッド部１４に形成された突出部２５の外側
端面２４との間に、封止樹脂２８の表面張力によって形
成される程度の段差が形成されてもよいことを意味す
る。In the semiconductor device using the lead frame in which the semiconductor element 18 is mounted in the concave portion 20 of the die pad portion 14 , as shown in FIG.
The support bars 12 and 12 are bent so that 4 is an exposed surface that forms substantially the same plane as the surface of the sealing resin 28 that forms the semiconductor device. This support bar 1
The bent portions 2 and 12 are sealed in a sealing resin 28 as shown in FIG. Therefore, even if the corner portion of the bent portion is formed in a curved shape as shown in FIG. 9, when the semiconductor element 18 mounted on the die pad portion 14 is resin-sealed, it is sealed. It does not contribute to the leakage of the sealing resin to the exposed surface exposed on the surface of the stop resin 28. The term “substantially the same plane” means that the surface tension of the sealing resin 28 is between the surface of the sealing resin 28 and the outer end surface 24 of the protrusion 25 formed on the die pad portion 14 forming the exposed surface. It means that a step to the extent that is formed may be formed.
【００１０】一方、封止樹脂２８の表面と実質的に同一
表面を形成する露出面となる突出部２５の外側端面２４
を形成する外周縁は、図４に示す様に、封止樹脂２８と
接触している。このため、外側端面２４の外周縁を形成
する角部が、図９に示す如く、曲面状であると、半導体
素子１８等を樹脂封止する際に、封止樹脂２８の表面に
露出する露出面への封止樹脂の漏れ出しが発生し易い。
この点、図１〜図４に示す本発明に係るリードフレーム
では、突出部２５の外側端面２４の外周縁を形成する角
部を、ダイパッド部１４に搭載された半導体素子１８等
を樹脂封止する際に、封止樹脂２８の表面と実質的に同
一平面を形成する露出面となる突出部２５の外側端面２
４への封止樹脂の漏れ出しを防止し得るように、シャー
プな角部に形成する。On the other hand, the outer end surface 24 of the protruding portion 25 which is an exposed surface forming substantially the same surface as the surface of the sealing resin 28.
As shown in FIG. 4, the outer peripheral edge forming the part is in contact with the sealing resin 28. Therefore, when the corner portion forming the outer peripheral edge of the outer end surface 24 has a curved shape as shown in FIG. 9, when the semiconductor element 18 and the like are resin-sealed, the exposed portion is exposed on the surface of the sealing resin 28. The sealing resin easily leaks to the surface.
In this regard, in the lead frame according to the present invention shown in FIGS. 1 to 4, the corner portion forming the outer peripheral edge of the outer end surface 24 of the protrusion 25 is resin-sealed with the semiconductor element 18 mounted on the die pad portion 14. When this is done, the outer end surface 2 of the protruding portion 25, which is an exposed surface that forms substantially the same plane as the surface of the sealing resin 28,
It is formed in a sharp corner portion so that the sealing resin can be prevented from leaking to 4.
【００１１】この様に、シャープな角部から成る外周縁
によって形成された外側端面２４を具備する突出部２５
は、図５に示す様に、ダイパッド部１４の一面側に、半
導体素子１８が搭載される搭載面積よりも大きなパンチ
３０とダイ３２とを用いたプレス加工によって凹部２０
を形成することにより形成できる。かかる凹部２０を形
成するプレス加工としては、抜き方向に突出させた抜き
部の抜き落としを途中で停止する半抜き加工を好適に挙
げることができる。この半抜き加工は、加工材の所定箇
所に当接したパンチ３０の先端部をダイ３２内に進入さ
せて抜き方向に突出させた抜き部を抜き落とす直前にパ
ンチ３０のダイ３２への進入を停止することによって行
うことができる。かかる半抜き加工によれば、パンチ３
０の先端部のダイ３２内への進入に伴ってダイパッド１
４の他面側から突出する突出部の側周面は、ダイ３２の
内壁面によって規制される。このため、突出部２５の外
側端面２４の外周縁を形成する角部は、曲げ加工によっ
て形成された角部に比較してシャープな角部とすること
ができる。Thus, the protruding portion 25 having the outer end surface 24 formed by the outer peripheral edge of the sharp corner portion.
As shown in FIG. 5, the concave portion 20 is formed on one surface side of the die pad portion 14 by press working using a punch 30 and a die 32 each having a larger mounting area on which the semiconductor element 18 is mounted.
Can be formed by forming. As the press working for forming the concave portion 20, there can be suitably mentioned a half blanking working for stopping the pulling out of the punched portion protruding in the pulling direction on the way. This half-blanking is performed by allowing the tip of the punch 30 that is in contact with a predetermined portion of the processed material to enter the die 32, and to allow the punch 30 to enter the die 32 immediately before the punched-out protruding portion is removed. It can be done by stopping. According to this half blanking, the punch 3
The die pad 1 as the tip of 0 enters the die 32.
The side peripheral surface of the projecting portion projecting from the other surface side of 4 is regulated by the inner wall surface of the die 32. Therefore, the corners forming the outer peripheral edge of the outer end surface 24 of the protrusion 25 can be sharper than the corners formed by bending.
【００１２】この様な半抜き加工によって凹部２０を形
成することにより、突出部２５の外側端面２４を形成す
る外周縁をシャープな角部とすることができるが、図６
（ａ）に示す様に、半抜き加工によって凹部２０を形成
した後、突出部２５の外側端面２４′に、抜き加工の加
工方向に対して反対側の方向に押し戻すプッシュバック
加工を施すことによって、外側端面２の外周縁を更に一
層シャープな角部に形成できる。また、ダイパッド部１
４の他面側から突出する突出部２５の外側端面２４の外
周縁を傾斜面とする面取りを施すことによって、突出部
２５の端面２４を形成する外周縁を更にシャープな角部
とすることもできる。かかる面取りを施した突出部２５
の部分断面図を図６（ｂ）に示す。図６（ｂ）に示す様
に、面取りされた突出部２５の傾斜面２７には、面取り
前の曲面状の角部が消滅されている。By forming the concave portion 20 by such a half blanking process, the outer peripheral edge forming the outer end surface 24 of the protruding portion 25 can be made into a sharp corner portion .
As shown in (a), after the recess 20 is formed by half blanking, the outer end surface 24 ′ of the projecting portion 25 is subjected to pushback processing that pushes back in the direction opposite to the working direction of punching. , The outer peripheral edge of the outer end face 2
Layers can be formed at sharp corners . Also, the die pad 1
By chamfering of an inclined surface of the outer peripheral edge of the outer end face 24 of the projecting portion 25 which projects from the other side of the 4, also be a further sharp corners the outer peripheral edge to form an end face 24 of the protrusion 25 it can. Projecting portion 25 having such chamfering
A partial cross-sectional view of is shown in FIG. As shown in FIG. 6B, the chamfered inclined surface 27 of the protruding portion 25 has the curved corners before chamfering disappeared.
【００１３】[0013]
【発明の効果】本発明に係るリードフレームによれば、
半導体装置を形成する封止樹脂の表面に、ダイパッド部
の他面側に形成した突出部の端面が露出するように、ダ
イパッド部に連結されたサポートバーを曲折しても、ダ
イパッド部に搭載した半導体素子等を樹脂封止する際
に、ダイパッド部の露出面に封止樹脂が進入する事態を
防止できる。更に、ダイパッド部の他面側に突出部を形
成することによって、ダイパッド部の他面側に段差部を
形成することができた。その結果、得られる半導体装置
の外観及び放熱性が向上された半導体装置を得ることが
でき、且つ水分の封止樹脂内への進入も少なく信頼性に
富む半導体装置を提供できる。According to the lead frame of the present invention,
Even if the support bar connected to the die pad was bent so that the end surface of the protrusion formed on the other side of the die pad was exposed on the surface of the sealing resin that forms the semiconductor device, it was mounted on the die pad. It is possible to prevent the sealing resin from entering the exposed surface of the die pad portion when the semiconductor element or the like is resin-sealed. Further, by forming the protruding portion on the other surface side of the die pad portion, the step portion can be formed on the other surface side of the die pad portion. As a result, it is possible to obtain a semiconductor device in which the appearance and heat dissipation of the obtained semiconductor device are improved, and to provide a highly reliable semiconductor device in which moisture does not enter the sealing resin.
【図１】本発明に係るリードフレームの一例を示す平面
図である。FIG. 1 is a plan view showing an example of a lead frame according to the present invention.
【図２】図１に示すリードフレームを構成するダイパッ
ド部の断面図である。2 is a cross-sectional view of a die pad portion that constitutes the lead frame shown in FIG.
【図３】図１に示すリードフレームを用いて得られた半
導体装置の断面である。FIG. 3 is a cross section of a semiconductor device obtained by using the lead frame shown in FIG.
【図４】図３に示す半導体装置の部分断面図である。FIG. 4 is a partial cross-sectional view of the semiconductor device shown in FIG.
【図５】図２に示すダイパッド部の凹部を形成する形成
方法を説明するための説明図である。5A and 5B are explanatory views for explaining a forming method for forming a concave portion of the die pad portion shown in FIG.
【図６】図５に示す凹部の形成方法の他の例である。6 is another example of the method for forming the recess shown in FIG.
【図７】従来のリードフレームの一例を示す平面図であ
る。FIG. 7 is a plan view showing an example of a conventional lead frame.
【図８】図７に示すリードフレームを用いた半導体装置
の断面図である。8 is a cross-sectional view of a semiconductor device using the lead frame shown in FIG.
【図９】図８に示す半導体装置の部分断面図である。9 is a partial cross-sectional view of the semiconductor device shown in FIG.
１０ リードフレーム １１ レール部 １２ サポートバー １４ ダイパッド部 １６ インナーリード １８ 半導体素子 ２０ 凹部 ２２ 底部 ２４ 外側端面 ２５ 突出部 ２６ 開口周縁部 ２８ 封止樹脂 10 lead frame 11 Rail section 12 Support bar 14 Die pad part 16 Inner lead 18 Semiconductor element 20 recess 22 bottom 24 Outer end face 25 Projection 26 Opening edge 28 Sealing resin
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 平５−29529（ＪＰ，Ａ) 特開 平７−130915（ＪＰ，Ａ) (58)調査した分野(Int.Cl.7，ＤＢ名) H01L 23/50 H01L 23/28 ─────────────────────────────────────────────────── ─── Continuation of the front page (56) References JP-A-5-29529 (JP, A) JP-A-7-130915 (JP, A) (58) Fields investigated (Int.Cl. 7 , DB name) H01L 23/50 H01L 23/28
Claims (3)
ド部の一面側が半導体素子の搭載面であり、且つ前記ダ
イパッド部の他面側の少なくとも一部が、前記半導体素
子を搭載したダイパッド部を樹脂封止したとき、封止樹
脂の表面と実質的に同一平面を形成する露出面となるリ
ードフレームにおいて、 該半導体素子が接合される接合面積よりも広い開口面積
の凹部が前記ダイパッドの一面側に開口されていると共
に、前記凹部を形成する底部の一部がダイパッド部の他
面側から突出する突出部に形成され、 前記凹部の底面に対応する前記突出部の外側端面が、前
記凹部の開口面積と等しく且つ前記封止樹脂の表面と実
質的に同一平面となる露出面であり、 前 記樹脂封止の際に、前記露出面への封止樹脂の漏れ出
しを防止し得るように、前記突出部の外側端面の外周縁
が、面取りによって傾斜面に形成されて、角張った角部
に形成されていることを特徴とするリードフレーム。1. A surface of a die pad portion connected to a support bar is a semiconductor element mounting surface, and at least a part of the other surface side of the die pad portion seals the die pad portion mounting the semiconductor element with a resin. When stopped, in the lead frame, which is an exposed surface forming substantially the same plane as the surface of the sealing resin, a recess having an opening area larger than the bonding area to which the semiconductor element is bonded is opened to one surface side of the die pad. In addition, a part of the bottom portion forming the recess is formed on a protrusion protruding from the other surface side of the die pad portion, and the outer end surface of the protrusion corresponding to the bottom surface of the recess is an opening area of the recess. equally a and exposed surface as a surface substantially flush of the sealing resin, the time before the SL resin sealing, as can prevent leakage of sealing resin to the exposed surface, the Outer edge of outer edge of protrusion
Is formed into an inclined surface by chamfering and is formed into an angled corner portion.
ド部の一面側が半導体素子の搭載面であり、且つ前記ダ
イパッド部の他面側の少なくとも一部が、前記半導体素
子を搭載したダイパッド部を樹脂封止したとき、封止樹
脂の表面と実質的に同一平面を形成する露出面となるリ
ードフレームをプレス加工により製造する際に、 該ダイパッド部の一面側に、抜き方向に突出させた抜き
部の抜き落としを途中で停止する半抜き加工を施すこと
によって、前記半導体素子が搭載される搭載面積よりも
広い開口面積の凹部を形成すると共に、前記凹部の底部
の一部をダイパッド部の他面側から突出して突出部を形
成し、前記凹部の底面に対応する突出部の外側端面を前
記凹部の開口面積と等しい面積に形成した後、 前記ダイパッド部の他面側に突出する突出部の外側端面
を、前記半抜き加工の抜き方向に対して反対側の方向に
押し戻すプッシュバック加工を施すことを特徴とする リ
ードフレームの製造方法。2. A die pad connected to a support bar.
One side of the module is the mounting surface of the semiconductor element, and
At least a part of the other surface side of the ipad portion is the semiconductor element.
When the die pad with the child is sealed with resin, the sealing tree
An exposed surface that forms substantially the same plane as the surface of the oil.
When manufacturing the frame by press working, the die pad part is formed on one side of
Performing a half-punching process that stops the removal of parts
Depending on the mounting area on which the semiconductor element is mounted,
A recess having a wide opening area is formed and the bottom of the recess is formed.
Part of the die pad from the other side of the die pad
The outer end face of the protrusion that corresponds to the bottom of the recess.
The outer end surface of the protruding portion that protrudes to the other surface side of the die pad portion after forming the same area as the opening area of the concave portion
In the direction opposite to the drawing direction of the half blanking
A method for manufacturing a lead frame , which comprises performing pushback processing for pushing back .
側に突出する突出部の外側端面の外周縁を傾斜面に形成
する面取りを施す請求項２記載のリードフレームの製造
方法。3. The other surface of the die pad portion during half blanking
The outer peripheral edge of the outer end surface of the protruding portion that protrudes to the side is formed into an inclined surface
The method for manufacturing a lead frame according to claim 2, wherein chamfering is performed .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20354798A JP3422936B2 (en) | 1998-07-17 | 1998-07-17 | Lead frame and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20354798A JP3422936B2 (en) | 1998-07-17 | 1998-07-17 | Lead frame and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000036558A JP2000036558A (en) | 2000-02-02 |
| JP3422936B2 true JP3422936B2 (en) | 2003-07-07 |
Family
ID=16475955
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20354798A Expired - Fee Related JP3422936B2 (en) | 1998-07-17 | 1998-07-17 | Lead frame and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3422936B2 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003264265A (en) * | 2002-03-08 | 2003-09-19 | Mitsubishi Electric Corp | Power semiconductor device |
| JP4769965B2 (en) * | 2006-07-28 | 2011-09-07 | オンセミコンダクター・トレーディング・リミテッド | Semiconductor device and manufacturing method thereof |
| JP5139383B2 (en) * | 2009-08-25 | 2013-02-06 | ルネサスエレクトロニクス株式会社 | Manufacturing method of semiconductor device |
| JP2013143519A (en) | 2012-01-12 | 2013-07-22 | Fuji Electric Co Ltd | Connector and resin sealed type semiconductor device |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0529529A (en) * | 1991-07-24 | 1993-02-05 | Matsushita Electron Corp | Resin-sealed semiconductor device |
| JP2540478B2 (en) * | 1993-11-04 | 1996-10-02 | 株式会社後藤製作所 | Heat sink for semiconductor device and manufacturing method thereof |
-
1998
- 1998-07-17 JP JP20354798A patent/JP3422936B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2000036558A (en) | 2000-02-02 |
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