JP3384399B2 - High withstand voltage level shift circuit for high withstand voltage IC - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a high breakdown voltage IC used for controlling and driving a power device and the like, and relates to a high breakdown voltage IC formed on a semiconductor substrate different from the power device or on the same semiconductor substrate.

[0002]

2. Description of the Related Art Here, since there are many references, the names of the documents are collectively numbered and described at the end of the [Problems to be solved by the invention] section.
]] The content shown in parentheses after the USP No in the reference is a brief explanation of the patent content.

The power devices [1] to [4] are widely used in many fields such as inverters and converters for controlling motors, inverters for lighting, various power supplies and switches for driving solenoids and relays. Conventionally, the drive and control of this power device was done by electronic circuits [5], [6] that were configured by combining individual semiconductor elements and electronic components.
LSI (Highly integrated IC, IC means integrated circuit)
Low withstand voltage ICs [7], [8] and several hundreds of volts using technology
Class high-voltage ICs [9], [10] have been put to practical use, and power ICs [11], [12] in which a drive / control circuit and a power device are integrated on the same semiconductor substrate are used for inverters and Converters and other converters have been made smaller and more reliable.

FIG. 6 is a circuit diagram mainly illustrating the power portion of the motor control inverter. Three-phase motor Mo
Power device used to drive the
BTs Q1 to Q6 and diodes D1 to D6) form a bridge circuit and have the structure of a power module [13] housed in the same package. Where I
GBT is an insulated gate bipolar transistor. The main power supply V _CC is normally a high voltage of 100 to 400V DC. When the high potential side of the main power supply V _CC is represented by V _CCH and the low potential side is represented by V _CCL , the _IGBTQ1 connected to V _CCH
In order to drive ~ Q3, the potential of the gate electrode of the IGBT becomes higher than this, so that the drive circuit has a photo coupler (PC: Photo Coupler) or a high voltage IC (HVIC: High Voltage I).
Negrated Circuit) is used.
Input / output terminal I / O (Input / Output) of the drive circuit
t) is usually connected to a microcomputer, and the microcomputer controls the entire inverter.

FIG. 7 shows a high voltage IC (HV) used in FIG.
2 shows a block diagram of an internal configuration unit of the IC). That structure
The success will be described below. Microphone through input / output terminal I / O
(B) Which IGBT is used to exchange signals with a computer
Control signals to turn on and off
And a control circuit CU (Control Unit)
The signals from the control circuit CU are received on the input lines SIN4 to SIN6.
Output line OUT4 for gate drive of IGBT
Output the signal from ~ 6 and detect the overcurrent of the IGBT.
Output terminal [14] OC4 ~ 6 to prevent overheating temperature terminal [15] OT4 ~
6 to output an abnormal signal on the output lines SOUT4 to SOUT6.
The main power supply V of FIG._CCLow potential side V_{CC L} Connect to
Gate drive circuit GDU for driving GBTQ4 to Q6
(Gate Drive Unit) 4 to 6, and GDU4
Main power supply V with the same function as ~ 6_CCHigh potential side V_CCH Connect to
Gate drive circuits GDU1 to GDU3 for driving Q1 to Q3
And V_CCL Level control circuit CU signal and V_CCH level
And V_CCLSignals of GDU1 to 3 that travel between levels
Mediating between (SIN1-3, SOUT1-3)
Level shift circuit LSU (Level Shi)
ft Unit). GDU1 to 3
Drive power source V_DD1 ~ V_DD3 (See Figure 8)
High potential side of V_DDH1~ V_DDH3, Low potential side is V_DDL1~ V
_DDL3, From the drive power supply in GDU4 ~ 6
Common power supply is V_DDC (Omitted in FIG. 8)
This common power supply V_DDC High potential side of V_DDHC, Low potential side is V
_DDLCIndicate. In addition, drivers for GDU4-6 and CU
Eve common power supply V_DDC Is about 10 to 20V.
Power supply V_DDC Low potential side V_DDLCIs the main power supply V in FIG._CCLow
Potential side V_CCL Connect to.

FIG. 8 shows a more detailed connection diagram of the GDU1 and the IGBT Q1 of FIG. Here are other GDUs and I
GBT is omitted. Drive power supply V _{DD1 of} GDU1
Is about 10 to 20V, and the low potential side _VDDL1 is IG
It is connected to the emitter terminal E of BTQ1, that is, to the U phase of the inverter output, and the collector terminal C of IGBTQ1 is connected to the main power source V.
It is connected to the high potential side V _CCH of _CC . Therefore, IG
When the BTQ1 is turned on, the potential of V _DDL1 becomes substantially equal to the potential of V _CCH , and when the IGBT Q1 is turned off, it is V
The potential of _DDL1 becomes substantially equal to the potential of V _CCL . Therefore,
A higher dielectric strength voltage than the voltage of the main power supply V _CC is required between the GDU1 and other circuit units, and the same applies to the GDUs 2 and 3. The level shift circuit LSU must itself have a high breakdown voltage.
In the figure, the IGBTQ1 includes a current detection terminal [16] M, a temperature detection element θ, and a temperature detection terminal [17] Temp, and the gate drive circuit GDU1 detects an abnormality of the IGBTQ1 by the current detection terminal OC1 and the temperature detection terminal OT1. An abnormal signal is output from the output line SOUT1. OUT1 is a gate drive terminal.

FIG. 9 is a configuration diagram in which the same circuit as in FIG. 6 is configured by using a product called an intelligent power module [18]. In this case, the gate drive circuits GDU1 to GD
U6 is composed of a low breakdown voltage IC, individual electronic components, and a semiconductor element, and is provided in the power device side package together with the power devices (Q1 to Q6, D1 to D6). Even in this case, a photocoupler (PC) or a high voltage IC (HVIC) is used as the external drive circuit.

FIG. 10 shows the IGBT Q1 and GDU of FIG.
1 shows the circuit around 1 in detail. SIN1
The SOUT1 and SOUT1 are connected to a PC or an HVIC that has an external configuration. As another configuration example, GDU1 and Q
Also disclosed are power IC technologies [19] and [20] for integrating 1 on one chip (same semiconductor substrate) and power IC technologies [11] and [12] for integrating all circuits of FIG. 9 on one chip. Has been done.

FIG. 11 shows the high breakdown voltage IC (HVI) shown in FIG.
C) is a plan view of the chip, showing the layout of each circuit unit
I draw it so that you can see it. High breakdown voltage from other circuit units
GDU1 that needs to be separated by the junction separation [21], [22],
Electrically separated by [10] and dielectric separation [23], [11], [12]
It is formed in an isolated island, and its peripheral edge is high-voltage bonded.
Termination structure [11], [21] HVJT (High voltage for insulation
Surrounded by the structure of the end of the applied junction)
There is. In the level shift circuit LSU, the main power source V_CCLow
Potential V on the potential side_CCL Drive level V drive signal_DD1
Potential V on the low potential side_DDL1Level signal (input line SI
High withstand voltage n channel for level shifting to (N1 signal)
A MOSFET (HVN) is provided. This high endurance
In the n-channel MOSFET, the central drain electrode D
_N High voltage junction termination structure [10], [11] HVJT
It has been burned. Also, in the separated island of GDU1, V
_{DD L1}Set the level signal (the signal on the output line SOUT1) to V
_CCLHigh breakdown voltage p level for level shifting to level signal
A channel MOSFET (HVP) is provided.
Drain electrode D_P High voltage junction termination structure H
VJT is provided. Then, the input line of GDU1
The high-voltage junction termination between the SIN1 and the output line SOUT1
That between GDU1 and LSU over the structure HVJT
Wiring is straddling each. In addition, for each GDU in FIG.
The OUT terminal, OC terminal, and OT terminal shown are arranged, and
V for DU1 to GDU3_DDH1~ V_DDH3Terminal, V_DDL1~
V_DDL3The terminals are arranged, and in GDU4 to GDU6
V_DDHCTerminal and V_DDLCThe terminals of are arranged. In the figure
Gives a detailed description of GDU1 and GDU4, and other GDUs
Detailed explanation of the arrangement is omitted.

The problems of the above-mentioned conventional high withstand voltage IC and power IC are that it is difficult to achieve a high withstand voltage exceeding 600 V, and the manufacturing cost is high. However, more detailed description will be given below. (1) Issues Related to Separation Technology As described above, a separation technology for electrically separating a circuit unit (for example, GDU 1, 2, 3 in FIG. 11) having a potential greatly different from that of other portions from other portions with a high withstand voltage. Dielectric isolation [11], [12], [23], junction isolation [10], [21], [22], self-isolation
There are technologies such as [20] and [24]. However, the dielectric isolation and the junction isolation have a complicated isolation structure and a high manufacturing cost. The higher the breakdown voltage, the higher the manufacturing cost. Further, although the manufacturing cost of self-isolation can be kept low, a high breakdown voltage technology has not yet been developed in the CMOS (complementary MOSFET) configuration, while an analog circuit in the NMOS (n-channel MOSFET) configuration capable of high breakdown voltage. It is extremely difficult to improve the accuracy of the above-mentioned current detection circuit and temperature detection circuit. (2) Issues related to high voltage junction termination structure HVJT High voltage junction termination structure is for vertical power devices [2
5], [26], for horizontal high-voltage devices [27], [28], [29]
Various structures are disclosed for each individual application. However, in the HVIC which is a high breakdown voltage IC and the high breakdown voltage power IC in which power devices are integrated, a high breakdown voltage junction termination structure between integrated circuit units (GDU1 to GDU1 in FIG.
3), a high withstand voltage lateral n-channel MOSFET high withstand voltage junction termination structure (around _DN of HVN in FIG. 11), a high withstand voltage lateral p channel MOSFET high withstand voltage junction termination structure (HVP in FIG. 11 D (Around _P ), and further, a high breakdown voltage junction termination structure for many applications such as a high breakdown voltage junction termination structure for vertical power devices needs to be formed on the same chip. In order to realize a high withstand voltage IC or a power IC with a conventional structure having a low versatility, many different high withstand voltage junction termination structures HVJT must be formed on the same chip, resulting in high manufacturing cost.

[0011]

The problems associated with the high breakdown voltage junction termination structure under the signal wiring are as follows. In a high breakdown voltage IC, signals are exchanged between integrated circuit units (for example, GDU1 and LSU in FIG. 11) having greatly different potentials, and therefore it is necessary to pass signal wiring on the high breakdown voltage junction termination structure HVJT. However, when a signal wiring is passed over the high breakdown voltage junction termination structure HVJT, there is a problem that the breakdown voltage of the high breakdown voltage junction termination structure HVJT is lowered due to the influence of the potential of the signal wiring [30]. Several structures [10], [11], [12], [31] have been proposed to solve this problem, but the manufacturing cost is high due to the complicated structure. In addition, in these proposed structures, the influence of the signal wiring cannot be completely eliminated, and the length of the decrease in breakdown voltage is reduced.
Although it can be put to practical use up to a withstand voltage of about 00V, a withstand voltage higher than that has not yet been realized.

The present invention is a high voltage junction termination structure HVJT.
The above problem that the withstand voltage of the high withstand voltage junction termination structure HVJT is lowered by the influence of the potential of the signal line when the signal line is passed therethrough, and the low cost high withstand voltage IC and the high withstand voltage level shift circuit used therefor are solved. The purpose is to provide. References [1] USP 4,364,073 (IGBT related) [2] USP 4,893,165 (Non punch through type IGBT related) [3] USP 5,008,725 (Power MOSFET related) [4] EP 0,071,916, JP-A-58-39065 (High speed) Power MOSFETs with built-in diode) [5] USP 5,091,664 (Drive circuit related) [6] USP 5,287,023 (Drive circuit related) [7] USP 4,947,234 (Low voltage IC and power device related) [8] USP 4,937,646 (Low voltage IC and (Power device related)

[9] A. Wegener and M. Amato "A HIGH VOLTAGE INTERF
ACE IC FOR HALF-BRIDGECIRCUITS "Electrochemical So
ciety Extended Abstracts, vol.89-1, pp.476-478 (1989) [10] T. Terashima et al "Structure of 600V IC an
d A New Voltage Sensing Device "IEEE Proceeding of
the 5th International Symposium on Power Semicond
uctor Devices and ICs, pp.224-229 (1993) [11] K. Endo et al "A 500V 1A 1-chip Inverter IC
with a New Electric Field Reduction Structure "IE
EE Proceeding of the 6th International Symposium o
n Power Semiconductor Devices and ICs, pp.379-383 (1
994) [12] N. Sakurai et al "A three-phase inverter IC
for AC220V with a drasticall small chip size and
highly intelligent functions "IEEE Proceeding of T
he 5th International Symposium on Power Semiconduc
tor Devices and ICs, pp.310-315 (1993) [13] M. Mori et al "A HIGH POWER IGBT MODULE FOR
TRACTION MOTOR DRIVE "IEEE Proceeding of the 5th I
nternational Symposium on Power Semiconductor Devi
ces and ICs, pp.287-289 (1993) [14] USP 5,159,516 (current detection method related) [15] USP 5,070,322 (temperature detection method related) [16] USP 5,097,302 (current detection element related) [17] USP 5,304,837 (Related to temperature detection element) [18] K. Reinmuth et al "Intelligent Power Module
s for Driving Systems "IEEE Proceeding of the 6th I
nternational Symposium on Power Semiconductor Devi
ces and ICs, pp.93-97 (1994) [19] USP 4,677,325 (IPS related) [20] USP 5,053,838 (IPS related) [21] R. Zambrano et al "A New Edge Structure for
2kVolt Power IC Operation "IEEE Proceeding of the
6th International Symposium on Power Semiconducto
r Devices and ICs, pp.373-378 (1994) [22] MF Chang et al "Lateral HVIC with 1200-V
Bipolar and Field-Effect Devices "IEEE Transactions
on Electron devices, vol.ED-33, No.12, pp.1992-2001
(1986) [23] T. Ohoka et al "A WAFER BONDED SOI STRUCTUR
E FOR INTELLIGENT POWER ICs "IEEE Proceeding of th
e 5th International Symposium on Power Semiconduct
or Devices and ICs, pp.119-123 (1993) [24] JPMILLER "A VERY HIGH VOLTAGE TECHNOLOGY
(up to 1200V) FOR VERTICAL SMART POEWR ICs "Electr
ochemical Society Extended Abstracts, vol.89-1, pp.4
03-404 (1989) [25] USP 4,399,449 (HVJT related power devices) [26] USP 4,633,292 (HVJT related power devices) [27] USP 4,811,075 (HVJT related horizontal MOSFETs) [28] USP 5,258,636 (Horizontal MOSFET related) HVJT related) [29] USP 5,089,871 (HVJT related horizontal MOSFET) [30] PKTMOK and CATSALAMA "Interconnect I
nduced Breakdown in HVIC's "Electrochemical Societ
y Extended Abstracts, vol.89-1, pp.437-438 (1989) [31] USP 5,043,781 (Power IC related)

[0013]

In order to achieve the above object, as a solving means, one of the main terminals is connected to the high potential side of a high voltage power source and the other of the main terminals is connected to a load.
A high withstand voltage level shift circuit of a high withstand voltage IC for driving the gates of at least one power device, the low withstand voltage low withstand voltage supplied with current from a low voltage power supply based on the low potential side of the high voltage power supply. A level shift circuit for converting a signal of a circuit portion into a signal to a high-potential-side low withstand voltage circuit portion to which a current is supplied by a low-voltage power source with one of the main terminals of the power device as a reference, One terminal of the first load means and the first voltage limiting means is connected to the drain (collector) electrode of the breakdown voltage n-channel transistor, and the other terminals of the first load means and the first voltage limiting means are at a high potential. Connected to the high-potential side of the low-voltage power supply in the side low-voltage circuit, and the first voltage generating means is connected to the source (emitter) electrode of the high-voltage n-channel transistor and the low-voltage power supply in the low-potential low-voltage circuit. The second voltage limiting means is connected between the gate (base) electrode of the high breakdown voltage n-channel transistor and the low potential side of the low voltage power source in the low potential side low breakdown voltage circuit portion, A signal from the low potential side low breakdown voltage circuit portion is input to the gate (base) electrode of the high breakdown voltage n channel transistor, and a signal from the drain (collector) electrode of the high breakdown voltage n channel transistor is output to the high potential side low breakdown voltage circuit portion. Will be done. Then, the second voltage limiting means may be composed of an n-channel MOS diode in which a gate (base) and a drain (collector) are connected. Alternatively, a high breakdown voltage level shift circuit of a high breakdown voltage IC for driving the gates of one or more power devices in which one of the main terminals is connected to the high potential side of the high voltage power supply and the other of the main terminals is connected to the load. And
A signal of a high-potential-side low-breakdown-voltage circuit part to which a current is supplied from a low-voltage power source with one of the main terminals of the power device as a reference is a low-voltage power source with the low-potential side of the high-voltage power source as a reference. Is a level shift circuit for converting a signal to a low-potential-side low-breakdown voltage circuit portion supplied with a current by a second load means and a third voltage limiting means on a drain (collector) electrode of a high-breakdown-voltage p-channel transistor. One terminal is connected, the other terminals of the second load means and the third voltage limiting means are connected to the low potential side of the low voltage power source of the low potential side low breakdown voltage circuit portion, and the second voltage generating means is connected. Has a high breakdown voltage p
The fourth voltage limiting means is connected between the source (emitter) electrode of the channel transistor and the high-potential side of the low-voltage power supply in the high-potential-side low-breakdown voltage circuit portion, and the fourth voltage limiting means is connected to the gate (base) electrode of the high-breakdown-voltage p-channel transistor. It is connected between the high-potential side low-voltage circuit part and the high-potential side of the low-voltage power supply,
A signal from the high-potential-side low-voltage circuit portion is input to the gate (base) electrode of the channel transistor, and a signal is output from the drain (collector) electrode of the high-voltage p-channel transistor to the high-potential side low-voltage circuit portion. And
Further, it is preferable that the fourth voltage limiting means is composed of a p-channel MOS diode in which a gate (base) and a drain (collector) are connected.

Also, in the text, "one of the main terminals of the power device is a high-potential-side low-breakdown voltage circuit portion to which current is supplied by a low-voltage power supply with reference to one of the main terminals" means either one. It means that when the power device on the high potential side is an n-channel element, the load side is the reference, and when it is a p-channel element, the power supply side is the reference. Here, the reference means that the source (emitter) electrode of the power device serves as a reference potential point (commonly referred to as a ground point). According to claims 1 to 4, the voltage generated by the current flowing through the first or second voltage generating means is high withstand voltage n.
Since it lowers the voltage between the gate (base) and source (emitter) of the channel or p-channel transistor,
The current flowing in the high breakdown voltage n-channel or p-channel transistor is suppressed to a low level, and the heat generation of the transistor is reduced, so that the reliability is improved.

According to the second and fourth aspects, the voltage of the MOS diode is lower than the voltage of the Zener diode which is normally used, so that the current can be suppressed further, the heat generation of the transistor is further reduced, and the reliability is improved. Further improve.

[0016]

BEST MODE FOR CARRYING OUT THE INVENTION Each reference numeral in the following drawings is the same as that described above, and a description thereof will be omitted. FIG. 1 shows a first reference example, FIG. 1A is a plan view, and FIG. 1B is a side view. High voltage junction termination structure HVJT is a high voltage side low voltage circuit GDU
1 to GDU3 and high breakdown voltage n-channel MOSFET (HV
N) and a high breakdown voltage p-channel MOSFET (HVP). High breakdown voltage n-channel MOSFE
T (HVN) and high breakdown voltage p-channel MOSFET (H
VP) has a drain electrode with a high withstand voltage junction termination structure HVJT
, The source electrode and the gate electrode are arranged outside the loop of the high breakdown voltage junction termination structure HVJT. And high breakdown voltage n-channel MOSFET (HVN)
Drain electrode D _N and GDU1, high breakdown voltage p-channel MO
The drain electrode D _P and LSU of the SFET (HVP) are S
IN1 and SOUT1 are connected respectively. This S
IN1 and SOUT1 are formed by bonding wires such as gold wires. Further, by separating the outer ends of the high withstand voltage junction termination structures HVJT of GDU1 to GDU3 and the outer ends of the high withstand voltage junction termination structures HVJT of HVN and HVP from the bonding wires by 100 μm or more, the space capacitance (floating capacity) The capacity can be reduced by an order of magnitude. Further, the larger this interval is, the smaller the space capacity can be made, but practically about 5 mm is the maximum, and usually about 1 mm is preferable. Here, the outer end means a portion that contacts the low potential side low breakdown voltage circuit in the case of each of the high breakdown voltage junction termination structures HVJT and HVN of GDU1 to GDU3, and a portion that contacts the high potential side low breakdown voltage circuit in the case of HVP.

FIG. 2 shows a second reference example. FIG. 2A is a plan view and FIG. 2B is a side view. High voltage junction termination structure H
VJT is a low-potential-side low breakdown voltage circuit composed of GDU4 to GDU6 and CU and LSU, GDU1 to GDU3, a high breakdown voltage n-channel MOSFET (HVN), and a high breakdown voltage p.
It is provided in each channel MOSFET (HVP),
High breakdown voltage n-channel MOSFET (HVN) and GDU1,
The high breakdown voltage p-channel MOSFET (HVP) and LSU are connected by SIN1 and SOUT1. This SIN
1, SOUT1 is a bonding wire such as a gold wire. Further, each high breakdown voltage junction termination structure H of GDU1 to GDU3
The same effect as described above can be obtained by separating the outer end of the VJT and the outer end of the high breakdown voltage junction termination structure HVJT of HVN and HVP from the bonding wire by 100 μm or more.

FIG. 3 shows a third reference example, FIG. 3 (a) is a plan view and FIG. 3 (b) is a side view. High voltage junction termination structure H
VJT is around the chip, GDU1 to GDU3, high breakdown voltage n
The high breakdown voltage n-channel MOSFET (HVN) and GDU1 and the high breakdown voltage p-channel MOSFET (HVP) and LSU provided in the channel MOSFET (HVN) and the high breakdown voltage p-channel MOSFET (HVP), respectively, are SIN.
1 and SOUT1. This SIN1, SO
UT1 is a bonding wire such as a gold wire. Also G
The outer end of each high breakdown voltage junction termination structure HVJT of DU1 to GDU3 and the high breakdown voltage junction termination structure H of HVN and HVP.
The outer edge of the VJT and the bonding wire are 100 μm
By separating them as described above, the same effect as described above can be obtained.

FIG. 4 shows a plan view of the fourth reference example. G, which is a gate drive unit IC included in the high voltage IC of FIG.
HUI, which is another component, is made by manufacturing each of the DUIC1 to GDUIC6 with individual bare chips (naked chips)
High voltage IC consisting of N, HVP, LSU, CU
(HV-IC) is manufactured with a bare chip other than those,
These bare chips are placed on the printed circuit board PCB.
Is connected at one end with a bonding wire of the drain electrode D _N and SIN1 of HVN, the source electrode S _P output HVP, is connected at one end and the bonding wires each of the gate electrode G _P and V _DDH1, SOUT1. In the HVN, the drain electrode is inside the high breakdown voltage junction termination structure HVJT, and the source electrode and the gate electrode are outside. In the HVP, the drain electrode is outside the high breakdown voltage junction termination structure HVJT, and the source electrode and the gate electrode are inside. Further, the circular arcs in the other figures indicate the connection with the bonding wires. The bonding wire and the high voltage junction termination structure HVJT are 100 μm
The space capacity is reduced by separating by more than m. Instead of the bare chip described above, it is of course possible to use one assembled into a package. In addition, GDUIC 1 to individual chips
GDUIC6 is an intelligent power module (I
High breakdown voltage IC excluding this function
A printed board in which the (HV-IC) is incorporated may be mounted on the IPM case.

FIG. 5 shows a high withstand voltage level shift circuit diagram in the first embodiment. It is preferable to use a constant current source such as a resistance or a depletion mode MOSFET for the voltage generation means R _N1 and R _P1 and the load means R _N2 and R _P2 . A Zener diode may be used for the voltage limiting means Z _N1 and Z _P1 , but a MOS diode (MOSFET
The source and gate are used as a diode by short-circuiting them) is better because it can keep the Zener voltage low. The current limiting means R _N3 and R _P3 are resistors,
In this case, it is added to limit the current flowing through the MOS diodes Z _N1 and Z _P1. However, if it is not necessary to limit the flowing current, this resistor need not be added.

In the sentence "High-potential-side low withstand voltage circuit portion supplied with current from a low-voltage power source based on one of the main terminals of a power device", one of the main terminals is high-potential. This means that when the power device on the side is an n-channel element, the load side is the reference, and when it is a p-channel element, the power supply side is the reference. Here, the reference means that the source (emitter) electrode of the power device serves as a reference potential point (commonly referred to as a ground point).

MOSFETs are suitable for high breakdown voltage n-channel or p-channel transistors.
(Junction type field effect transistor), bipolar transistor, IGBT (insulated gate type transistor), SIT
A transistor such as (static induction transistor) may be used. Although gold wires are used for the signal wires (SIN1, SOUT1, etc.), aluminum wires may be used. High voltage junction termination structure H
If the distance between the signal wiring of VJT and the signal wiring greatly differs from the signal wiring of 100 μm or more, the influence of the potential of the signal wiring has almost no influence on the high withstand voltage junction termination structure HVJT. Withstand voltage junction termination structure HVJT
The discharge phenomenon between them does not occur either.

[0023]

According to the present invention, it is possible to realize a high-voltage IC having a high performance at a low cost by reducing the influence of the breakdown voltage of the high-voltage junction termination structure due to the signal wiring. Further, by using these, a low-cost and high-performance drive circuit for a power device can be realized.

[Brief description of drawings]

FIG. 1 is a first reference example of the present invention, in which (a) is a plan view,
(B) is a side view

FIG. 2 is a second reference example of the present invention, (a) is a plan view,
(B) is a side view

FIG. 3 is a third reference example of the present invention, (a) is a plan view,
(B) is a side view

FIG. 4 is a plan view of a fourth reference example of the present invention.

FIG. 5 is a high breakdown voltage level shift circuit diagram of the first embodiment of the present invention.

FIG. 6 is a circuit configuration diagram mainly illustrating a power portion of a motor control inverter.

7 is a block diagram of an internal configuration unit of a high voltage IC (HVIC) used in FIG.

FIG. 8 is a more detailed connection diagram of the GDU1 and the IGBTQ1 of FIG.

FIG. 9 is a configuration diagram in which the same circuit as in FIG. 6 is configured by using a product called an intelligent power module.

10 is a diagram showing in detail the circuit around the IGBT Q1 and GDU1 of FIG.

11 is a plan view of a chip of the high voltage IC (HVIC) shown in FIG.

[Explanation of symbols]

HVIC High voltage IC HVJT High voltage junction termination structure V _DD1 Drive power supply S Source terminal D Drain terminal G Gate terminal Q1 Power device (IGBT) Q2 Power device (IGBT) Q3 Power device (IGBT) Q4 Power device (IGBT) Q5 Power device (IGBT) Q6 power device (IGBT) D1 power device (diode) D2 power device (diode) D3 power device (diode) D4 power device (diode) D5 power device (diode) D6 power device (diode) Mo motor V _CC main Power supply PC Photo coupler I / O Input / output terminal CU Control circuit LSU Level shift circuit GDU1 Gate drive circuit GDU2 Gate drive circuit GDU3 Gate drive circuit GDU4 Gate drive Circuit GDU5 Gate drive circuit GDU6 Gate drive circuit SIN Input line SOUT Output line V _DDC common power supply V _DDHC Common power supply high potential side V _DDLC Common power supply low potential side V _DD drive power supply V _DDH1 drive Power supply high potential side V _DDH2 drive High potential side of power supply V _DDH3 High potential side of drive power supply V _DDL1 Low potential side of drive power supply V _DDL2 Low potential side of drive power supply V _DDL3 Low potential side of drive power supply OUT Gate drive terminal OC Current detection terminal OT Temperature detection terminal M Current detection terminal (IGBT side) Temp Temperature detection terminal (temperature detection element side) θ Temperature detection element K Cathode A Anode U U phase HVN High breakdown voltage n-channel MOSFET HVP High breakdown voltage p-channel MOSFET _DN drain electrode D _P drain electrode _SP Source electrode G _P Gate electrode

─────────────────────────────────────────────────── ─── Continuation of the front page (58) Fields surveyed (Int.Cl. ⁷ , DB name) H03K 17/00 H01L 27/088 H01L 21/8234

Claims (4)

(57) [Claims] 1. A high withstand voltage of a high withstand voltage IC for driving a gate of one or more power devices in which one of the main terminals is connected to the high potential side of a high voltage power source and the other of the main terminals is connected to a load. In the level shift circuit, the signal of the low-potential-side low-voltage circuit portion, which is supplied with current from the low-voltage power source with reference to the low-potential side of the high-voltage power source, is referenced to one of the main terminals of the power device. Is a level shift circuit for converting a signal to a high-potential-side low-breakdown voltage circuit portion to which current is supplied by the low-voltage power supply, wherein the drain (collector) electrode of the high-breakdown-voltage n-channel transistor is connected to the first load means and the first load means. One terminal of the first voltage limiting means is connected, and the other terminals of the first load means and the first voltage limiting means are connected to the high potential side of the low voltage power source of the high potential side low breakdown voltage circuit portion, 1
Voltage generating means is connected between the source (emitter) electrode of the high breakdown voltage n-channel transistor and the low potential side of the low voltage power supply in the low potential side low breakdown voltage circuit portion, and the second voltage limiting means is the high breakdown voltage n channel It is connected between the gate (base) electrode of the transistor and the low-potential side of the low-voltage power supply in the low-potential-side low-breakdown voltage circuit portion, and from the low-potential-side low-breakdown-voltage circuit portion to the gate (base) electrode of the high-breakdown-voltage n-channel transistor. Signal is input and a signal is output from the drain (collector) electrode of the high breakdown voltage n-channel transistor to the high potential side low breakdown voltage circuit portion. A high breakdown voltage level shift circuit for a high breakdown voltage IC. 2. The high breakdown voltage of a high breakdown voltage IC according to claim 1, wherein the second voltage limiting means is composed of an n-channel MOS diode in which a gate (base) and a drain (collector) are connected. Level shift circuit. 3. A high breakdown voltage of a high breakdown voltage IC for driving one or more power device gates, one of the main terminals of which is connected to the high potential side of a high voltage power supply and the other of which is connected to a load. In the level shift circuit, a signal of a high-potential-side low withstand voltage circuit portion, to which a current is supplied by a low-voltage power source with reference to one of the main terminals of the power device,
A level shift circuit for converting a signal to a low-potential-side low-voltage circuit portion supplied with current by a low-voltage power source based on the low-potential side of the high-voltage power source, the drain (collector of a high-voltage p-channel transistor ) One terminal of the second load means and the third voltage limiting means is connected to the electrode, and the other terminals of the second load means and the third voltage limiting means are connected to the low voltage of the low potential side low breakdown voltage circuit portion. The second voltage generating means is connected to the low potential side of the power source, and is connected between the source (emitter) electrode of the high breakdown voltage p-channel transistor and the high potential side of the low voltage power source in the high potential side low breakdown voltage circuit portion, The fourth voltage limiting means is connected between the gate (base) electrode of the high breakdown voltage p-channel transistor and the high potential side of the low voltage power supply in the high potential side low breakdown voltage circuit portion, and the gate (base) of the high breakdown voltage p channel transistor is connected. A high breakdown voltage level characterized in that a signal from the high breakdown voltage side low breakdown voltage circuit portion is input, and a signal is output from the drain (collector) electrode of the high breakdown voltage side p-channel transistor to the high potential side low breakdown voltage circuit portion. Shift circuit. 4. The high withstand voltage level shifter and circuit according to claim 3, wherein the fourth voltage limiting means comprises a p-channel MOS diode having a gate (base) and a drain (collector) connected to each other.