JP3364328B2 - Resin-sealed semiconductor device and method of manufacturing the same - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a resin-sealed semiconductor device.
And a manufacturing method thereof .

[0002]

2. Description of the Related Art In recent years, resin-encapsulated semiconductor devices have become larger in size along with higher integration of semiconductor devices, and the trend toward thinner packages has been intensified along with the miniaturization of mounting space. The trend is expected to become stronger and stronger in the future. Also, as a result of the diversification of package types,
Although the types of resin-encapsulated semiconductor devices increase, the production amount of each type tends to decrease, and a method of manufacturing a resin-encapsulated semiconductor device corresponding to these types is desired.

Conventionally, resin-encapsulated semiconductor devices have been encapsulated by a transfer molding method. This method involves heating and melting a tablet made of epoxy molding compound powder mainly composed of epoxy resin, curing agent, filler, etc., injecting it into a mold using a transfer molding machine, molding at high temperature and high pressure, and curing. With the epoxy resin composition described above, for example, a semiconductor element mounted on a lead frame is sealed. According to this method, the epoxy resin composition completely covers the element, so that the element is excellent in hermeticity, and since it is densely molded with a mold, the appearance of the package is also good. Therefore, at present, most resin-sealed semiconductor devices are sealed by the transfer molding method. However, in the transfer molding method, various attempts have been made to reduce the elastic modulus and the thermal expansion coefficient of the encapsulating resin from the viewpoint of reducing the stress on the semiconductor element in response to the trend of thinner semiconductor elements. Although it has been made, a sealing resin having a low elastic modulus, a low thermal expansion coefficient, a high package accuracy, an excellent package cracking property at the time of mounting, and a sufficient reliability has been found. The reality is that there is none.

In the conventional transfer molding method, a highly reliable resin encapsulation method corresponding to a thin package has not been found. In particular, thinning has progressed,
When the package thickness is about 1 mm or less, the flow of the molten resin causes deformation of the bonding wire that connects the semiconductor element and the lead frame, and contact with an adjacent bonding wire is likely to occur. further,
With the increase in size of semiconductor elements, the size of the die pad becomes larger, tilting due to the deviation of the resin flow velocity above and below the die pad, unfilling occurs, and voids generated inside reduce the moisture resistance. There was a problem. It should be noted that such a problem also occurs when a wire bonding method is adopted and a so-called inner lead bonding method is used in which electrical connection with a semiconductor element is directly made to a tip of a lead of a film carrier or the like via a bump or the like. there were. For example, as a measure against a short circuit of the bonding wire at the time of resin sealing and a thinner package, a method has been proposed in which an insulating coating is applied to the bonding wire so that the bonding wire is deformed into a flat resin. It cannot be said that the manufacturing method has sufficient reliability.

Further, there is a problem of in-line manufacturing process. That is, in the manufacturing process of semiconductor devices, full automation is in progress, and some of them are automated by one line and unmanned. However, it is difficult to inline the semiconductor device encapsulation process with conventional transfer molding, and the line is removed and batch manufacturing is performed.Therefore, there is a new production method that allows the encapsulation process to be inline. It has been demanded.

Further, it is expected that the types of packages will become more and more diversified in the future, and the conventional transfer molding method will not be able to adequately cope with them. Under such circumstances, there is a demand for development of a flexible production mode capable of high-mix low-volume production. As described above, the conventional transfer molding method is not suitable for inline sealing process, and
Since it is difficult to cope with future increase in size and thickness of packages, a new production method to replace this is desired.

Therefore, as a resin-encapsulated semiconductor device which can be inlined in the encapsulation process, is suitable for making the package large and thin, and has high package accuracy and high package reliability, A sealing resin molded body made of uncured resin is arranged on at least the active surface side of the semiconductor element connected to the external lead structure, and the sealing resin molded body made of the uncured resin is pressed against the semiconductor element. However, a sealing method for curing is proposed (Japanese Patent Laid-Open No. 4-
No. 340258).

23 and 24 are vertical sectional views showing a process of manufacturing a resin-sealed type semiconductor device using such a conventional resin molded body for sealing. In this method, the semiconductor element 5
And, in a state where the resin moldings 1 and 2 for sealing are evenly brought into contact with the external lead structure including a film carrier or a lead frame, the uncured resin is melted by heat or light and then pressure-cured. Thus, the semiconductor element 5 is sealed. 23 and 24, 4
Is a bump, 6 is a mount agent layer made of an adhesive resin,
Reference numeral 7 is a film carrier, 9 is a die pad forming a part of the lead frame 8, and 10 is a bonding wire for connecting the lead frame 8 and the semiconductor element 5. According to this method, the sealing resin moldings 1 and 2 are sealed in a state of being brought into contact with the semiconductor element 5 and the external lead forming body in advance. Even if the cured resin has a large viscosity when melted, good and dense sealing can be performed. In addition, since the uncured resin melts and cures in a good state in this way, the mechanical strength of the obtained package is high, and when the package is smaller than the semiconductor element 5, or when the package is thin package of about 1 mm or less. In this case, the semiconductor element 5 can be satisfactorily sealed without cracks.

[0009]

However, according to this method, when the package is mounted in the same manner as the resin-sealed package by the conventional transfer molding method, package cracks are generated due to the influence of moisture absorbed and the product is damaged. There was a problem such as a decrease in reliability.

Further, for the purpose of making the semiconductor encapsulation process in-line, a semiconductor resin 5 is provided with a conveying device for the encapsulating resin.
Attempts have been made to fix the resin molding bodies 1 and 2 for encapsulation, and to convey and set the resin molding bodies 1 and 2 for encapsulation in a mold used for molding, but the former method is complicated. A sealing resin transfer device is required, or the sealing resin molded body temporarily fixed from the semiconductor element drops during transfer.
In the latter case, there are problems such as installation of a heating tank for softening the sealing resin and reaction of the sealing resin by heating to increase viscosity.

When pressure is applied from above and below using an uncured resin, a particularly large stress is applied in the up and down direction, and when inner lead bonding is used, as shown in FIG.
As shown in (b), the lead 3 is likely to be deformed in the vertical direction, which causes the lead 3 to come into contact with the end portion of the semiconductor element 5 and cause a short circuit.

When the wire bonding method is used, as shown in FIG. 24 (b), the lead frame 3
There is a problem that the bonding wire 7 for connecting the semiconductor element 5 and the semiconductor element 5 is deformed so that adjacent wires come into contact with each other, and when further deformed, the semiconductor element 5 and the die pad 9 are contacted. Such a problem was particularly likely to occur when an uncured resin thickened by heating in a heating tank or the like was used.

Further, there is a problem that the moldability and the productivity are not improved because an expensive mold is required for molding and a long curing time is required.

The present invention has been made in order to solve such a problem, and does not cause a defective element such as a short circuit when the resin-sealed semiconductor device is made thin and highly integrated.
It has excellent moisture resistance reliability after mounting, can be inlined in the semiconductor encapsulation process, does not drop the encapsulation resin conveyed in the encapsulation process, and requires a complicated encapsulation resin transfer device and encapsulation resin heating tank. Since there is no such thing, the manufacturing process is simple, the production efficiency is high,
Moreover, it is an object of the present invention to provide a resin-sealed semiconductor device having good reliability for a long period of time and a method for manufacturing the same.

[0015]

A first method for manufacturing a resin-encapsulated semiconductor device according to the present invention comprises a step of molding a concave resin molded body for sealing, and the molded concave resin molded body for sealing. and disposing a rim on at least one surface of the external lead and the counter is allowed to semiconductor devices, a sealing concave molded resin before
A method of manufacturing a resin-encapsulated semiconductor device, which comprises a step of curing while applying pressure to an external lead of a semiconductor element, wherein the step of molding a concave resin molding for sealing is a heated concave metal mold. Outer circumference by heating the resin molding for sealing in the mold
It is characterized in that it is a step of molding a concave resin molded body having a surface made of a cured resin and at least a sealing surface made of an uncured resin. The first resin-encapsulated semiconductor device obtained by the first manufacturing method is characterized in that at least one surface of the semiconductor element has a hollow portion that is not in contact with the encapsulating resin composition.

A second resin-encapsulated semiconductor device of the present invention is
A resin-encapsulated semiconductor device in which a semiconductor element is encapsulated with a resin composition for encapsulation, which comprises a semiconductor element and internal leads.
Wherein the sealing resin molding external lead structure electrically connected through the body is made of a sealing resin composition inside Lee
The present invention is characterized by having a temporary fixing portion that is separated from the door structure and temporarily fixed. A second method for manufacturing a resin-encapsulated semiconductor device according to the present invention includes a semiconductor element and the semiconductor element.
Temporary fastening part electrically connected through the internal lead structure
And an external lead structure having an outer lead structure, and a temporary fixing portion provided on the external lead structure, separated from the internal lead structure.
And a step of disposing the uncured resin molded body, and a step of resin-sealing the semiconductor element by curing the uncured resin molded body while applying pressure.

A third resin-encapsulated semiconductor device of the present invention is
A resin-encapsulated semiconductor device in which a semiconductor element is encapsulated with a resin composition for encapsulation, and at least one of a semiconductor element, an external lead structure electrically connected to the semiconductor element, and an internal lead structure. One is characterized by being fixed with resin. A third method for manufacturing a resin-encapsulated semiconductor device of the present invention includes a semiconductor element, an inner lead structure electrically connected to the semiconductor element, and an uncured resin molded body on the outer lead structure. And a step of resin-sealing the semiconductor element by curing the uncured resin molded body while applying pressure, wherein a step of disposing the uncured resin molded body is provided. However, after the semiconductor element, at least one of the external lead structure and the internal lead structure electrically connected to the semiconductor element is cured with a curing resin, the uncured resin molded body is arranged.

The first resin-encapsulated semiconductor device of the present invention has a hollow structure as a sealing structure having hollow portions above and below the semiconductor element, and a structure having a hollow portion only on the active surface of the semiconductor element. A structure in which the active surface of the semiconductor element has a hollow portion and the back surface is a non-hollow portion can be mentioned.

The sealing structure having such a hollow portion is
It can be obtained by curing the concave resin molded body while applying pressure to the external leads. For example, a semiconductor element is connected to an external lead structure such as a lead frame or a film carrier through a bonding wire or a bump, and this is pressure-bonded or compression-molded with a concave resin molding for sealing to form a resin encapsulation having a hollow portion. A static semiconductor device can be obtained.

A method of manufacturing a concave resin molding for sealing in which the outer peripheral surface is made of a cured resin and at least the sealing surface is made of an uncured resin is as follows. A cured resin molded body and an uncured resin molded body can be integrated by a method of softening and molding into a concave mold shape. The uncured state and the cured state can be freely selected by setting the mold temperature and the molding time. Further, when package accuracy is required, a concave molded body can be produced by pressing and molding using upper and lower molds. The part that comes into contact with the leads during crimping is composed of an uncured resin molded body, and this uncured resin molded body cures from the molten state to produce a hollow resin package in which the lead part is fixed and the upper and lower resin layers are integrated. it can.

Specific examples of the method of manufacturing the first resin-encapsulated semiconductor device of the present invention include the following. 1) A concave resin molded body formed by heating a sealing resin molded body in a mold in advance is disposed on at least the active surface side or the back surface side of a semiconductor element electrically connected to an external lead structure. A method for manufacturing a hollow resin-encapsulated semiconductor device including a sealing step of curing this concave resin molded body while applying pressure to external leads to seal a semiconductor element, 2) externally via a bonding wire A concave resin molded body is arranged at least on the active surface side of the semiconductor element electrically connected to the lead structure, and the concave resin molded body is cured while being pressed against the external lead to seal the semiconductor element. A method for manufacturing a hollow resin-encapsulated semiconductor device including a sealing step, 3) disposing a recessed resin molded body on at least a back surface side of a semiconductor element electrically connected to an external lead structure via bumps, 4. A method for manufacturing a hollow resin-encapsulated semiconductor device, comprising a sealing step of curing a concave resin molded body under pressure against an external lead to seal a semiconductor element, 4) Electrically forming an external lead structure Step of arranging a concave resin molded body on at least the active surface side or the back surface side of the semiconductor element connected to, and curing the concave resin molded body while applying pressure to external leads to seal the semiconductor element A method for producing a hollow resin-encapsulated semiconductor device, wherein the recessed resin molded body of a hollow resin-encapsulated semiconductor device comprising: a cured resin layer and an uncured resin layer integrated with each other, 5) 4) A method for producing a hollow resin-encapsulated semiconductor device, comprising a concave resin molded body in which a cured resin layer and an uncured resin layer are integrated with the same resin composition.

The concave molding for sealing used in the present invention is particularly preferably a resin system in which ionic impurities are reduced. Examples of simple resins that can be used include thermosetting resins, photocurable resins, engineering plastics, and the like. Examples of the thermosetting resin include epoxy resin, polyimide resin, maleimide resin, silicone resin, phenol resin, polyurethane resin, polyester resin, and the like. These resins may be used alone or in combination, and a curing agent, a curing accelerator, a flame retardant, a filler, a colorant, a plasticizer, a low stress additive, and various other additives may be added to these resins. It may contain an agent.

Among the thermosetting resins, an epoxy resin is preferable as a resin having high adhesiveness to the device, and in particular, a biphenyl type epoxy resin represented by the following general formula (I), an orthocresol novolac epoxy resin, a general formula (II) )
A tris (hydroxyphenyl) methane-based epoxy resin represented by These epoxy resins not only improve the adhesiveness of the cured product according to the present invention, but also have the effect of improving the thermal shock resistance. Further, it is preferable because it has excellent humidity resistance reliability.

[0024]

[Chemical 1] Here, each R represents an organic group. Specific examples of the epoxy resin represented by the general formula (I) include 4,4'-bis (2,3-epoxypropoxy) biphenyl, 4,4'-bis (2,3-epoxypropoxy) -3, 3'-5,5'- Tetramethylbiphenyl, 4,4'-bis (2,3-epoxypropoxy) -3,3 '
-5,5'- Tetramethyl-2-chlorobiphenyl, 4,4'-
Bis (2,3-epoxypropoxy) -3,3′-5,5′-tetramethyl-2-bromobiphenyl, 4,4′-bis (2,3-epoxypropoxy) -3,3′-5, 5'-tetraethylbiphenyl, 4,4'-bis (2,3-epoxypropoxy) -3,3'-
5,5'-tetrabutylbiphenyl, 4,4'-bis (2,3-epoxypropoxy) -3,3'-5,5'-tetraphenylbiphenyl and the like can be mentioned. Further, as the epoxy resin having high adhesiveness, bisphenol A type epoxy resin, bisphenol F type epoxy resin and the like are also preferable.

In order to further improve the crack resistance, it is preferable to use a trifunctional epoxy resin represented by the following general formula (II).

[Chemical 2] Here, R ₁ and R ₂ represent an organic group. General formula (II)
As a specific example of the epoxy resin represented by, EPPN-502
(Nippon Kayaku product name, softening point 70 ° C, epoxy equivalent 170
), YL-932H (trade name manufactured by Yuka Shell, softening point 63 ° C, epoxy equivalent 171), ESX-221 (trade name manufactured by Sumitomo Chemical, softening point 85 ° C, epoxy equivalent 210) and the like.

Examples of the photocurable resin include polyester acrylate, epoxy acrylate, polyurethane acrylate, polyether acrylate, oligo acrylate, alkyd acrylate and polyol acrylate. Further, as a photoinitiator for these photocurable resins, acetophenone, benzophenone,
Examples thereof include Michler's ketone, benzyl, benzoin, benzoin alkyl ether, benzyl methyl ketal, tetramethyl thiuram monosulfide, thioxanthones and azo compounds.

Engineering plastics include polyphenylene sulfide (PPS), polyether ketone (PEEK), polyhydroxyphenylene ether (PPO), polyether sulfone (PES),
Polyether nitrile (PEN), aromatic polyesters such as polyarylate and polyoxybenzoyl, polymethylpentene, liquid crystal polymer, polyacetal, polycarbonate, acrylonitrile butadiene styrene (ABS), polyamides such as nylon 6 and nylon 66, ethylene Examples thereof include fluoropolymers such as tetrafluoroethylene copolymer and polytetrafluoroethylene.

Examples of the curing agent that can be used in the present invention include phenol novolac resin, cresol novolac resin, phenol aralkyl resin, allylphenol novolac resin, naphthol type novolac resin, and tris (hydroxyphenyl) alkane compound. You can

Examples of the low stress additive that can be used in the present invention include silicone rubber, methyl methacrylate butadiene styrene copolymer (MBS), acrylonitrile butadiene styrene copolymer (ABS) and the like.

The filler which can be used in the present invention includes quartz glass, fused silica, crystalline silica, glass, talc, alumina, calcium silicate, calcium carbonate, barium sulfate, magnesia, silicon nitride, boron nitride, There are various metal powders such as aluminum nitride, aluminum oxide, magnesium oxide, beryllium oxide, mica, metals, etc., such as aluminum powder with surface anti-oxidation treatment, copper powder and alloy powders thereof, etc. , A sub-spherical shape or a flaky shape can be used.

The curing accelerator that can be used in the present invention can be used without particular limitation as long as it can accelerate the curing reaction of the sealing organic resin component. Taking an epoxy resin as an example, examples of the curing accelerator include various amines, imidazoles, diazabicycloalkenes, organic phosphines, and metal chelates. Specifically, as amines, N, N-dimethylcyclohexylamine, N-methyldicyclohexylamine, triethylenediamine, diaminodiphenylsulfone, dimethylaminomethylphenol, benzyldimethylamine, trisdimethylaminomethylphenol, etc. are used as imidazoles. , 2-methylimidazole, 2-
Phenylimidazole, heptadecylimidazole, 2-
Heptadecyl imidazole, 2-ethyl imidazole, 2-
Ethyl-4-methylimidazole and the like are used as diazabicycloalkenes to obtain 1,8-diazabicyclo (5,4,0) undecene-7 (DBU), a phenolic salt of DBU (for example, U-CAT SA
Examples of organic phosphines such as No. 1) include triphenylphosphine (TPP), tributylphosphine, tricyclohexylphosphine, and methyldiphenylphosphine. As metal chelates, A
l Chelate, Zr chelate, etc.

Among these curing accelerators, triphenylphosphine (TPP) and heptadecylimidazole are particularly preferable because the obtained resin-encapsulated semiconductor device exhibits excellent electrical characteristics.

The flame retardant which can be used in the present invention is
Halogen-based, phosphorus-based, and inorganic flame-retardants can be used. Halogen-based flame retardants are mainly classified into bromine-based and chlorine-based flame retardants. Preferred brominated flame retardants include brominated bisphenol A type epoxy resin, tetrabromobisphenol A (TBA), 2,2-bis (4-hydroxy-3,5-dibromobenzene (HBB), tris (2,3 -Dibromopropyl) isocyanurate (TAIC-6B), 2,2-bis (4-hydroxyethoxy-3,5-dibromophenyl) propane (TBA-EO), decabromodiphenyl oxide (DBDPO), halogen-containing polyphosphate The bromine-based flame retardant has a higher flame-retardant effect than the chlorine-based one, and the combined effect with antimony trioxide is large. A preferable chlorine-based flame retardant is chlorinated paraffin. Preferred is a brominated bisphenol A type epoxy resin.Preferred phosphorus-based flame retardants are ammonium phosphate, triglycidyl phosphate (TCP), triethyl phosphate (TEP). Tris (β- chloroethyl) phosphate (T
CEP), trischloroethyl phosphate (CLP), trisdichloropropyl phosphate (CRP), cresyl diphenyl phosphate (CDP), xylenyl diphenyl phosphate (XDP), acidic phosphoric acid ester, nitrogen-containing phosphorus compounds and the like. Preferred inorganic flame retardants include red phosphorus, tin oxide, antimony trioxide, zirconium hydroxide, barium metaborate, aluminum hydroxide, magnesium hydroxide, calcium hydroxide, calcium aluminate hydrate, and the like. Particularly preferred inorganic flame retardants are antimony trioxide and aluminum hydroxide.

The colorants which can be used in the present invention are
In addition to commonly used carbon black, inorganic pigments, organic pigments, dyes and the like can be used. Inorganic pigments are generally not clear in color, but have excellent light resistance, heat resistance, solvent resistance, and high hiding power. A preferred inorganic pigment is Zn as a white pigment.
O ₂ , TiO ₂ , 2PbCO ₃ · Pb (OH) ₂ , ZnS + BaSO _4, etc.,
As a yellow pigment, PbCrO ₄ , CdS + ZnO, K ₃ [Co (N
O ₂ ) ₆ ] etc. are used as orange pigments such as PbCrO ₄ + PbSO ₄ +
Red pigments such as PbMoO ₄ are used as CdS + CdSe, Fe ₂
O ₃ , Pb ₃ O _4, etc., as a blue pigment, KFe [Fe (CN) ₆ ]
, NaFe [Fe (CN) ₆ ], NH ₄ Fe [Fe (CN) ₆ ] etc. as green pigments, CoO + ZnO, Cr ₂ O ₃ etc. as black pigments
It can be exemplified Fe ₃ O ₄ or the like. In addition, extender pigments include calcium carbonate, barium sulfate, aluminum hydroxide, barite powder, aluminum powder, and bronze powder, and these pigments may be used alone or in combination of a plurality of pigments. Preferred organic pigments and dyes include red and orange pigments such as azo-based, anthraquinone-based, and quinacridones, and purple pigments and dyes include triphenylmethane-based lake, oxazine dye, and anthraquinone dye, and blue pigments and dyes. As, phthalocyanine pigment, indanthrone dye, anthraquinone dye,
There are triphenylmethane lakes, green pigments include phthalocyanine pigments and anthraquinone pigments, and black dyes include diamond black, which is an oxidative condensation product of aniline, and these pigments or dyes can be used alone or in combination. You may use. As the black organic dye used in the present invention, an azo-based metal dye is particularly preferable.
As the azo type dye, a monoazo type dye is suitable.
The metal component contained in the monoazo dye is copper,
Examples thereof include potassium, sodium, chromium and cobalt, but copper and chromium are particularly preferable. Also,
The metal content is preferably 0.01 to 20% by weight. Further, the melting point of the dye is preferably 100 ° C. or higher, and the decomposition temperature is preferably 200 ° C.

In order to improve the mold releasability from the mold, a hydrocarbon wax, a fatty acid wax,
It is also effective to add a fatty acid amide wax, an ester wax or the like to the sealing resin or apply it to the contact surface with the mold. As a specific example, from the viewpoint of moisture resistance, carnauba wax, ester wax such as montan wax is preferable, and other long-chain carboxylic acids such as stearic acid, palmitic acid, zinc stearate, calcium stearate and metal salts thereof, Examples thereof include low molecular weight polyethylene wax. These release agents may be used alone or in combination.

The filler and the low stress additive used in the resin composition have a maximum particle size of 100 μm or less, preferably 50 μm or less. If the maximum particle size is large, problems such as damage to the leads due to large particles during molding and poor adhesion between the upper and lower resin molded bodies occur. As a result, the reliability of the device is lowered.

The uncured resin molded product and the uncured resin molded product used in the present invention can be prepared, for example, by the following method. An epoxy resin, a curing agent, a catalyst, a filler, a low stress additive, and other materials are crushed and mixed, and then melt-kneaded using an extruder, a roll, or the like to prepare a sealing resin. As a method of cutting the sealing concave mold forming body into a predetermined size, which is one of the processing methods, a method of cutting by punching with a mold or pressing a blade in a state where the resin is heated and softened, a roller There are a cutting method, an ultrasonic cutting method, a laser cutting method, a wire cutting method and the like. An example of the cutting method will be described. First, the uncured resin is pressure-molded to a predetermined thickness, and then the resin mold is softened on the release paper and pressed by a cold blade to cut the resin. Alternatively, the resin molding can be cut using a blade heated at room temperature. The heating temperature of the resin molded body or the blade is preferably 40 ° C. to 130 ° C., and the heating can be performed at a temperature within a range in which the reaction of the sealing resin does not proceed and the resin viscosity does not increase. The resin heating method is particularly preferable from the viewpoint of the accuracy of the cut surface and the uniformity of the heat history of the cut resin.

Furthermore, in the present invention, it is possible to laminate a metal material for the purpose of imparting a high function to the encapsulating mold for forming a package and to incorporate a moisture shielding layer to improve the moisture resistance reliability. Preferably metal material thickness 100
It is possible to use a resin molding for sealing in which metal foils having a thickness of 0 μm or less are laminated. In this case, the encapsulating resin molding is arranged so that the uncured resin side of the encapsulating concave mold body faces the active surface side of the semiconductor element. As the material of the metal material, a material having high adhesive strength with the sealing resin and high thermal conductivity is preferable. As an example of metal, for example,
Iron, copper, aluminum, nickel, chromium, zinc, tin, silver, gold, lead, magnesium, titanium, zirconia,
Tungsten, molybdenum, cobalt, stainless steel, 4
2 Nickel-iron alloys, brass, duralumin and alloys of these metals. However, when aiming for a thinner package, it is desirable to use a material that can be processed to be particularly thin and is lightweight.

Further, the concave molding for sealing may be reinforced with various kinds of woven cloth. Typical examples of the material of the woven fabric include glass, quartz, carbon fiber, silicon carbide, silicon nitride, aluminum nitride, alumina, zirconia, potassium titanate fiber in the inorganic system, and nylon system in the organic system, acrylic system, Vinylon-based, polyvinyl chloride-based, polyester-based, aramid-based, phenol-based, rayon-based, acetate-based, cotton, hemp, silk, and wool. These may be used alone or in combination. An example of using a prepreg reinforced with a woven fabric such as a glass woven fabric is as follows. A resin, a curing material, a curing accelerator, a filler, and other materials are dissolved in a solvent such as acetone to prepare a solution having an appropriate concentration. Is adjusted and the solution is applied to a woven cloth, or the woven cloth is impregnated in the solution, and the solvent is volatilized during standing, heating, or depressurization to produce a prepreg. The prepreg having good adhesiveness to the lead thus formed and the resin molded body having poor adhesiveness to the mold are superposed and heat-pressed by a press. In the present invention, during compression molding of the semiconductor element and the sealing resin molding, the pressure inside the mold may be reduced in order to prevent the occurrence of voids as much as possible. Further, it is desirable to perform after-curing in order to improve various characteristics of the package after the formation.

When a molding die is used in the present invention, the shape of the resin molded body used is the same as or slightly smaller than the shape of the die used for molding, and the excess resin and air are used during pressurization. It is desirable to provide the mold with an air bend that emits. In addition, in the present invention, since the sealing step can be performed in-line, a flexible manufacturing method suitable for high-quality small-quantity production can be obtained. The external lead structure such as a film carrier on which the semiconductor element is mounted and the molding for encapsulation can be supplied in a reel system. For example, supply with reels so that both correspond,
By combining and sealing, the semiconductor device assembly to sealing can be performed in a continuous process.

FIG. 22 shows a conceptual diagram of the manufacturing apparatus. This device continuously seals a tape base material mounting a semiconductor element connected to an outer lead structure by inner lead bonding or wire bonding while moving it between a supply reel 100a and a take-up reel 100b. To do. This apparatus comprises a supply reel 100a, a semiconductor element heating tank 200, two uncured resin moldings from above and below, a temporary fixing portion 300, a press forming portion 400, and a winding reel 100b. There is. First, the fixing resin molded body is set on the semiconductor element delivered from the supply reel 100a, and the inner leads are fixed by the semiconductor element heating tank 200 by heat curing. Furthermore, the semiconductor element in a heated state is temporarily fixed with the uncured resin molded body 300 by
The uncured resin molded body is attached and temporarily fixed to the upper surface side and the lower surface side of the semiconductor element. The semiconductor element heating tank 200 has a function of keeping the temperature inside the tank constant by a heater warm air heating method, and heats the tape base material to a predetermined temperature in a short time. Then, the tape base material is compression-molded into a predetermined package by using the heated upper and lower molds 500a and 500b in the press molding unit 400. After that, take-up reel 1
Wind up with 00b. A heating tank for after-curing the sealing resin may be provided between the press section 400 of the semiconductor sealing device and the take-up reel 100b. Further, the temporary fixing portion 300 has a positioning sensor, and the sealing resin molded body is conveyed to a predetermined position of the semiconductor element by a vacuum chuck method and temporarily fixed to the heated element. Further, as the semiconductor element heating bath 200, a heating bath of an infrared heating system or the like can be used in addition to the heater warm air heating system. Further, in addition to tape base materials such as film carriers, thin metal lead frames can be applied to the line of the semiconductor manufacturing apparatus shown in FIG. 22, and for the purpose of batch production of resin-sealed semiconductor devices. It is also possible to incorporate a mounting device, a bonding device, a cut and bend device, a deburring device, a marking device and the like.

The second resin-encapsulated semiconductor device of the present invention is
The external lead structure electrically connected to the semiconductor element has a temporary fixing portion for temporarily fixing the sealing resin molded body made of the sealing resin composition. The semiconductor element is sealed by disposing the uncured resin molded body in the temporary fixing portion formed on the external lead structure and curing it while applying pressure to the semiconductor element. That is, for example, the uncured resin molded body is fixed to the temporary fixing portion of the uncured resin molded body without contacting the bonding wire connecting the semiconductor element and the lead frame, and then the fixed sealing resin molded body is pressure bonded. Alternatively, the second resin-encapsulated semiconductor device manufacturing method of the present invention can be obtained by compression forming. The temporary fixing portion is formed at least on the active surface side of the semiconductor element at a position not contacting the bonding wire. It is also possible to provide a temporary fixing portion on the back surface side.

As the form of the temporary fixing portion, as long as the resin molding for sealing can be fixed and the uncured resin molding can be prevented from falling and the bonding wire deformed when the resin is conveyed or set. It may have any shape.

Specifically, a temporary fixing portion for fixing by encapsulating the resin molding for sealing, a temporary fixing portion for adhesion and fixing with an adhesive, and a net-like structure above and below the semiconductor element are used as temporary fixing portions. Etc.

The sealing structure is a structure in which the semiconductor element is pressure-sealed from above and below with a sealing resin molding, and the sealing resin molding is pressure-sealed only from the active surface of the semiconductor element, and the back surface of the semiconductor element is sealed. It is possible to form structures with exposed parts.
In the case of resin sealing, if shape accuracy is required, a molding die is used, and compression molding using a simple press or the like is also possible without using the die.

The lead frame provided with a temporary fixing portion for temporarily fixing the uncured resin molding used in the present invention is provided with a fixing lead at least at one position in the lead frame, and preferably the lead is used. The structure has fixing leads at four or more locations on the frame, and the fixing leads do not come into contact with the bonding wires connecting the semiconductor element and the lead frame when the sealing resin molding is pressure-bonded and sealed, and the package is packaged. The shape of the fixing lead is preferably not exposed to the outside, and the fixing lead is formed by the punching step, the etching step, etc. at the time of making the lead frame, and then the shape of the sealing resin molded body used for sealing is adjusted. Forming of the fixing leads is performed. As the lead frame in which the fixing lead for the uncured resin molded body is provided on the lead frame of the present invention, a metal lead frame such as a Cu lead frame or a 42 alloy lead frame is preferable particularly from the fixing force at the time of temporary fixing. .

The type and particle size of the encapsulating resin composition, the curing agent, the filler, etc. used in the second resin-encapsulated semiconductor device of the present invention are the same as those used in the first resin-encapsulated semiconductor device. Anything can be used.

As an application example of the second resin-encapsulated semiconductor device, a net-like structure may be provided at at least one location of the external lead structure electrically connected to the semiconductor element. This net-like structure mainly functions as a temporary fixing portion of the sealing resin molding. As the form of the reticulated structure, any one can be used as long as the resin molding for sealing in a fluid state can pass therethrough and the resin molding before sealing can be temporarily fixed. Specifically, a lattice-like form or a strip-like form can be mentioned.

The net-like structure is provided at a height not particularly in contact with the bonding wire of the semiconductor element. Further, it is preferable to provide it at a lower position in consideration of a thin package, and a thin material can be selected for the net-like structural body in a range that is not deformed by the flow of the sealing resin. Specific examples of preferable materials include Cu material and 42 alloy material, which are the same materials as the lead frame, and general metals. Further, for the purpose of achieving high adhesion with the sealing resin, weight reduction, and cost reduction, a heat-resistant polymer material in consideration of the temperature during molding can also be used. In this case, the sealing resin temporarily fixed to the net-like structure passes through the mesh of the net-like structure during molding, the resin flows to the surface of the semiconductor element, and the resin is sealed. Also in this case, the type and particle size of the encapsulating resin composition, the curing agent, the filler, and the like used in the first resin-encapsulated semiconductor device can be used.

A third resin-encapsulated semiconductor device of the present invention is
A thin uncured resin molding is placed in advance on at least one of the bonding wire, the inner lead and the semiconductor element, and after hardening and fixing, the encapsulating resin molding made of uncured resin is connected to the external lead structure. The semiconductor element is sealed by arranging it on at least the active surface side of the semiconductor element and curing the molding product made of uncured resin while pressing the semiconductor element. That is,
For example, a semiconductor element is connected to an external lead constituent body such as a lead frame or a film carrier via a bonding wire or a bump, and this is pressure-bonded or compression-molded with a resin molding body for sealing to obtain a third resin-sealed mold. A semiconductor device can be manufactured. The sealing structure is a structure in which the semiconductor resin is pressure-bonded and sealed from the top and bottom of the semiconductor element, and the resin molding for sealing is pressure-bonded and sealed only from the active surface of the semiconductor element, and the back surface of the semiconductor element is exposed. It is possible to mold the structure. The thin uncured resin molded body for fixing the bonding wire and the inner lead used in the present invention and the thermosetting resin for the uncured resin molded body may use the same resin or different resins, especially for fixing. A resin system having a strong adhesive force between the resin and the resin to be pressure-sealed is preferable, and a resin system having reduced ionic impurities is particularly preferable. As a specific example thereof, the one used for the first resin-encapsulated semiconductor device can be used. Also,
The type and particle size of the curing agent, the filler, and the like used in the first resin-encapsulated semiconductor device can be used.

[0051]

According to the first method of manufacturing a resin-encapsulated semiconductor device of the present invention, the resin molding is heated in advance in the mold,
By molding the concave resin molding, the manufacturing process can be simplified and can be made in-line.

Further, by arranging the concave resin molding on the semiconductor element previously connected by the bonding wire and curing the sealing resin molding made of uncured resin while applying pressure to the inner leads of the semiconductor element. Since the semiconductor element is sealed, a large force is not applied to the connection portion in the sealing step, the bonding wire does not come into contact with the end portion of the element, and the wire adjacent to the bonding wire does not come into contact. The reliability of the static semiconductor device can be greatly improved by eliminating element defects.

Further, by arranging the concave resin molding on the semiconductor element which is connected to the inner lead in advance via the bump and curing the resin molding while pressurizing the inner lead, the semiconductor element is sealed. The inner lead, the bonding wire, the semiconductor element, and the sealing resin layer do not come into contact with each other. As a result, there is no occurrence of inner lead deformation, wire deformation, bed movement, etc. due to resin flow such as transfer molding, and good reliability can be maintained. In the first resin-encapsulated semiconductor device, since the uncured resin molded body is melted and then cured while being pressed, water is not infiltrated from the lead interface, and the resin is sealed with high confidentiality. It can be performed. Further, regarding the package cracking property at the time of mounting, since the package is hollow, the resin layer is thin and water is easily discharged. For the concave resin molding, a resin system containing a large amount of filler component can be used for the purpose of reducing the coefficient of thermal expansion. Further, the semiconductor element can be sealed by melting and curing the uncured resin molding by supplying a small amount of heat or light. Moreover, since the uncured resin melts and cures in a good state in this way, the resulting package has high mechanical strength, and if the semiconductor element occupies a large area of the package, the thickness of the package is 1 mm or less. Even in the case of a mold package, sealing can be performed without damage by the sealing resin during molding. The method for manufacturing a resin-encapsulated semiconductor device according to the present invention,
In-line encapsulation process enables automation and is fully compatible with low-volume, high-mix production. As described above, according to the present invention, it is possible to simplify the manufacturing process and make it in-line, and it is possible to manufacture a resin-encapsulated semiconductor device having good reliability for a long period of time.

According to the second resin-encapsulated semiconductor device of the present invention, the film or the lead is formed by providing the uncured resin molded body on the temporary fixing portion for temporarily fixing the uncured resin molded body on the lead frame during manufacturing. When the semiconductor element is transported to the encapsulation device by the frame, the encapsulating resin molding does not drop, and there is no heating process of the encapsulating resin for temporary fixing to the lead frame. History is enough, and the increase in viscosity due to the reaction of the sealing resin is suppressed,
The deformation of the bonding wire can be reduced.
Then, the temporarily fixed resin molded body is pressure-bonded and sealed from the upper and lower sides of the semiconductor element, so that it is possible to manufacture a highly reliable resin-encapsulated semiconductor device in which element failure due to increase in viscosity of the sealing resin is suppressed. Also, due to the simplification of the sealing process,
It can be inlined. Compared to the transfer molding method, the uncured resin molded body has a higher melt viscosity and can be sealed better than the transfer molding method by reducing the pressing speed, which is one of the molding conditions during pressure bonding, and the coefficient of thermal expansion is small. For this purpose, a resin system containing a large amount of filler component can be used. Furthermore, the semiconductor element can be sealed by melting and curing the uncured resin molded body by supplying a small amount of heat or light. Moreover, since the uncured resin is melted and cured in a good state in this way, the same operational effect as that of the first resin-encapsulated semiconductor device can be obtained.

Further, by providing the net-like structure which is not deformed by the flow of the sealing resin in at least one place of the external lead structure, it becomes a buffer zone of the fluidized sealing resin.
As a result, a large force is applied to the connection portion in the sealing step, and the bonding wire does not come into contact with the end portion of the semiconductor element or contact between adjacent wires. Furthermore, since the uncured resin is melted and cured in a good state, it is possible to eliminate the element defects of the resin-encapsulated semiconductor device like the first resin-encapsulated semiconductor device and significantly improve the reliability. The effect is obtained.

According to the third resin-encapsulated semiconductor device of the present invention, a thin uncured resin molded body is previously arranged on the bonding wire, and after curing and fixing, a sealing resin molded body made of the uncured resin is formed. By curing the semiconductor element while applying pressure, a large force is applied to the connection portion in the sealing step, and the bonding wire does not come into contact with the end portion of the semiconductor element or contact between adjacent wires. In addition, a thin uncured resin molded body is placed on the inner leads in advance, and after curing and fixing, the sealing resin molded body made of the uncured resin is cured while applying pressure to the semiconductor element, thereby connecting in the sealing step. A large force is applied to the portion, and problems such as the inner lead coming into contact with the element end portion, the inner lead peeling from the bump, and the inner lead being cut off are eliminated.
As a result, the element failure of the resin-encapsulated semiconductor device can be eliminated and the reliability can be greatly improved. Further, since the sealing resin molded body is sealed in a state of being brought into contact with the semiconductor element, it is preferable that the uncured resin molded body has a large melt viscosity as compared with the transfer molding method. The resin system containing a large amount of the filler component can be used for the purpose of reducing the coefficient of thermal expansion. In this way, the uncured resin is melted and cured in a good state, so that the same effect as that of the first resin-encapsulated semiconductor device can be obtained.

[0057]

Embodiments of the present invention will now be described in detail with reference to the drawings. Note that Examples 1 to 5 and Comparative Examples 1 to 3 are the first resin-encapsulated semiconductor devices of the present invention, and Examples 6 to 11 and Comparative Examples 4 and 5 are the second resin-encapsulated semiconductors of the present invention. The device, Examples 12 to 14 and Comparative Examples 6 to 8 relate to the third resin-sealed semiconductor device of the present invention. Also, a reference example
Reference Example 1 and Reference Example 2 relate to a conventional resin-encapsulated semiconductor device.
It

Reference Example 1 FIG. 1 is a diagram showing a conventional method for manufacturing a concave resin molded body, and FIG. 3 has a structure in which a semiconductor element 5 in which an external lead 3 is connected via a bump 4 is sealed. It is sectional drawing which shows the manufacturing process of a resin-sealed semiconductor device.

Table 1 shows the compounding ratio of the sealing resin composition and the resin characteristics.

[0060]

[Table 1] The method for producing the encapsulating resin composition is to first disperse the components shown in Table 1 uniformly in a Henschel mixer, knead using a two-roll mill, and pulverize into tablets using a high-frequency preheater. A resin sheet 1a was produced by heating to a temperature of 85 ° C. and then pressure molding at a molding temperature of 120 ° C.
After cutting this resin sheet 1a into a predetermined size, T
Place on QFP100pin mold 20 and mold temperature 120
A concave resin molded body 1 was produced by molding at 0 ° C. (FIG. 1). Next, when performing resin sealing using the upper and lower concave resin moldings produced in this way, the uncured resin portions of the concave resin moldings 1 and 2 are temporarily heated to the front and back of the external lead structure in a heated state. Then, it is pressed and cured by using a mold 20 that surrounds the outer peripheral portion of the concave resin molded body.
A resin-sealed semiconductor device as shown in (b) was produced.

The mold used for enclosing the outer periphery is 1
A semiconductor element is sandwiched between concave resin moldings 1 and 2 using a mold having a 4 × 14 × 0.6 mm cavity 175 ° C ×
It was heated and pressed for 15 seconds to perform integral molding. Then 175 ℃
× After-curing for 8 hours, 85 ℃, relative humidity 8
Moisture absorption treatment for 5%, 168 hours, infrared reflow treatment at 240 ° C are performed sequentially, and further, thermal cycle test at -65 ° C to 200 ° C and moisture resistance reliability test at 128 ° C, 2.5 atmospheric pressure steam (pressure cooker test) ) Was carried out to check the number of defects. In addition, the presence or absence of deformation of the leads was also examined. The evaluation results are shown in Table 2.

Example 1 FIG. 2 is a diagram showing a method for producing a concave resin molded body of Example 1 . First, a cured resin b of a concave resin molded body to be an outer frame was produced by transfer molding. On top of this cured product b
An uncured resin molded body a , which was manufactured by the same method as in Reference Example 1 and was cut into a predetermined size, was placed and heat-molded to prepare a softened and integrated sealing concave resin molded body 1. The semiconductor element 5 mounted on the substrate is resin-sealed in the same manner as in Reference Example 1 by using the thus-fabricated vertical resin molded body, and the resin-sealed semiconductor device shown in FIG. Was produced. The obtained resin-sealed semiconductor device
It evaluated by the method similar to the reference example 1. The evaluation results are shown in Table 2.

Example 2 A semiconductor element 5 mounted on a substrate is manufactured by using a sealing resin molded body 1 and a concave resin molded body 2 in which a cured product b and an uncured resin molded body a are integrated. A resin-encapsulated semiconductor device shown in FIG. 5 was manufactured in the same manner as in Example 1 except that one-sided sealing was performed. The obtained resin-sealed semiconductor device was evaluated in the same manner as in Example 1. The evaluation results are shown in Table 2. Even when the one-sided sealing was performed by the method using only the concave resin molded body 2 shown in FIG. 6, the same result as in Example 2 was obtained. In FIG. 6, 6 indicates a mount agent layer.

Example 3 In FIG. 7, the semiconductor element 5 is mounted on the die pad 9 of the lead frame 8 via the mount agent layer 6, and the semiconductor element 5 and the lead frame 8 are connected using the bonding wire 10 and sealed. The concave resin molded bodies 1 and 2 were produced using the stopping resin composition, and the concave resin molded bodies 1 and 2 were manufactured.
The test element TQFP100pin (element size 10 × 10 ×
0.2 mm) was sealed to manufacture a resin-sealed semiconductor device. The obtained resin-sealed semiconductor device was evaluated in the same manner as in Example 1. The evaluation results are shown in Table 2. The presence or absence of deformation of the bonding wire 10 was investigated at the same time.

Example 4 The semiconductor element 5 mounted on the substrate was prepared by using one concave resin molding shown in FIG. 2 on the active side of the element and the back side of the element by using a flat resin molding on the substrate. A resin-encapsulated semiconductor device shown in FIG. 8 was produced in the same manner as in Example 1 except that single-sided encapsulation was performed. Example of the obtained resin-encapsulated semiconductor device
Evaluation was performed in the same manner as in 1 . The evaluation results are shown in Table 2.

Example 5 A semiconductor element 5 mounted on a substrate is manufactured by the same method as in Reference Example 1 except that one concave resin molding shown in FIG. 2 is sealed on one side of the active surface side of the element. The resin-sealed semiconductor device shown in FIG. 9 was produced. The obtained resin-sealed semiconductor device
It evaluated by the method similar to the reference example 1 . The evaluation results are shown in Table 2.

Reference Example 2 The semiconductor element 5 mounted on the substrate was molded by the same method as in Example 1 using the concave resin molding shown in FIG.
A resin-encapsulated semiconductor device was manufactured by using the steps shown in FIGS. 10 (a), (b), and (c). The obtained resin-sealed semiconductor device was evaluated in the same manner as in Example 1 . The evaluation results are shown in Table 2.

Comparative Example 1 A semiconductor device was manufactured by the same steps as in Reference Example 1, except that the same semiconductor element as that of Reference Example 1 was used and pressure curing was performed using a molding die using an uncured flat plate resin molded body from above and below. It was made. The obtained resin-sealed semiconductor device was evaluated by the same method as in Reference Example 1. The evaluation results are shown in Table 2.

Comparative Example 2 A semiconductor device was manufactured by the same steps as in Reference Example 1 except that the same semiconductor element as that of Example 3 was used and pressure curing was performed using a molding die using an uncured flat plate resin molding from above and below. It was made. The obtained resin-sealed semiconductor device was evaluated by the same method as in Reference Example 1. The evaluation results are shown in Table 2.

Comparative Example 3 Using the same semiconductor device as in Example 3 , TQFP100p was used.
A semiconductor device was manufactured by molding with an in-transfer mold and the same steps as in Example 3 . The obtained resin-sealed semiconductor device was evaluated by the same method as in Reference Example 1. The evaluation results are shown in Table 2. In Table 2, the size and shape of the resin molding used on the active surface side and the passive surface side of the semiconductor element, the chip size, the package size, the pressurizing condition, and the presence or absence of lead deformation and wire deformation after integral molding. The generation rate of initial defects is also shown.

[0071]

[Table 2] As is clear from Table 2, in the resin-encapsulated semiconductor devices obtained in Examples 1 to 5 , there is no lead deformation or wire deformation, and the resin-encapsulated semiconductor device is manufactured by molding at low pressure for a short time. We were able to. Further, as shown in Table 2, the resin-encapsulated semiconductor devices obtained in Examples 1 to 5 have excellent reliability in the results of the moisture resistance reliability test (pressure cooker test) and the thermal cycle test. It was On the other hand, in the case of using the flat-plate resin moldings of Comparative Examples 1 and 2 and the transfer molding method of Comparative Example 3, lead deformation and wire deformation occurred, and the moisture resistance reliability test (pressure cooker test) and the thermal cycle test were performed. Sometimes defects occurred early and lacked reliability.

Embodiment 6 FIG. 11 is a sectional view showing a manufacturing process of a bonding wire type resin-sealed semiconductor device in the second resin-sealed semiconductor device of the present invention. 16 shows a plan view of the obtained lead frame, and FIG. 17 shows a method of manufacturing the temporary fixing portion and the hanging pin portion. In FIG. 16, the lead frame 8 is a lead frame having a structure in which uncured resin fixing leads 11 serving as temporary fixing portions of resin and hanging pins 30 are provided at four corners. It is set in the recess. Then, the semiconductor element is resin-sealed with the upper and lower uncured resin moldings. In addition,
In FIG. 16, 9 is a die pad and 40 is a polyimide tape. FIG. 17 shows an example in which two temporary fixing portions are provided for the hanging pin portion. As a method of manufacturing the temporary fixing portion, the fixing lead is planarly manufactured by a punching method, an etching method, or the like when manufacturing the lead frame. Then, the uncured resin molded body is formed into a shape that is easy to fix, whereby a shape such as 11 can be produced. In this example, the same resin composition as in Reference Example 1 was used as the encapsulating resin composition.

The semiconductor element 5 is arranged on the die pad 9 via the mount agent layer 6, and is connected to the lead frame 8 having the uncured resin fixing lead 11 by the bonding wire 10 (FIG. 11A). Next, the uncured resin molded bodies 1 and 2 are temporarily fixed to the uncured resin fixing lead 11 (FIG. 11 (b)), and the package QFP144 is used.
Resin encapsulation was performed by using a die for a pin package to produce a resin-encapsulated semiconductor device (FIG. 11C). In this step, the uncured resin fixing lead 1 that serves as a temporary fixing portion
1 is integrated with sealing resins 1 and 2 at the time of resin sealing. The molding conditions are shown in Table 3.

After the appearance of the package of the obtained resin-encapsulated semiconductor device was checked, the deformation of the bonding wire was observed by an X-ray photographing method to perform an initial check of the test element. The deformation amount (%) of the bonding wire is L, which is the straight line distance from the root of the bonding wire on the lead frame side to the bonding pad of the chip.
When the maximum amount of deformation (deviation from the straight line) between the bonding wire and the above-mentioned straight line is ΔL, (ΔL / L)
It was determined as × 100 (%). In addition, the cross section of the package was observed, and the case where the shape of the bonding wire was deformed was evaluated as NG, and the case where the shape of the bonding wire was not deformed was evaluated as OK. Then, a moisture resistance reliability test (pressure cooker test) and a thermal cycle test were performed under the same conditions as in Example 1. The evaluation results are shown in Table 3.

Example 7 A resin-sealed semiconductor device was manufactured under the same conditions as in Example 6 except that the uncured resin fixing lead 11 had the structure shown in FIG. In this case, if the uncured resin fixing leads 11 for temporary fixing are sealed with the upper and lower uncured resin molded bodies, FIG.
As shown in (c), the package is completely hidden inside the package. Example of evaluation of the obtained resin-encapsulated semiconductor device
Evaluation was made in the same manner as in 6 . The evaluation results are shown in Table 3.

Example 8 A resin-sealed semiconductor device was manufactured under the same conditions as in Example 6 except that the uncured resin fixing lead 11 had the structure shown in FIG. In this case, the temporary fixing portion is coated with a resin having an adhesive action. The resin-encapsulated semiconductor device thus obtained was evaluated in the same manner as in Example 6 . The evaluation results are shown in Table 3.

Example 9 A resin-sealed semiconductor device was produced under the same conditions as in Example 6 except that the uncured resin fixing lead 11 had the structure shown in FIG. In this case, the temporary fixing portion is coated with a resin having an adhesive action. The resin-encapsulated semiconductor device thus obtained was evaluated in the same manner as in Example 6 . The evaluation results are shown in Table 3.

Example 10 A resin-sealed semiconductor device was produced under the same conditions as in Example 6 except that the uncured resin fixing lead 11 had the structure shown in FIG. In this case, the uncured resin molded body was heated to 100 ° C. by the infrared method, and the resin was encapsulated in a state where the temporary fixing lead 11 was bitten and fixed. The resin-encapsulated semiconductor device thus obtained was evaluated in the same manner as in Example 6 .
The evaluation results are shown in Table 3.

Embodiment 11 FIG. 18 is a sectional view showing a manufacturing process of a bonding wire type resin-sealed semiconductor device in an application example of the second resin-sealed semiconductor device of the present invention. 19 is a plan view of the mesh structure 13. The resin composition for sealing used the resin composition shown in Table 1.

In this example, as shown in FIG. 18A, the uncured sealing resin moldings 1 and 2 are temporarily fixed by using the lead frame 8 having the net-like structure 13 provided above and below the semiconductor element 5. (FIG. 18B), and then resin sealing was performed to obtain a resin-sealed semiconductor device (FIG. 18C). The net-like structure 13 was made of the same material as the lead frame 8, copper. The obtained resin-sealed semiconductor device was evaluated in the same manner as in Example 6 . The evaluation results are shown in Table 3.

Comparative Example 4 A semiconductor device was manufactured by the same steps as in Reference Example 1, except that the uncured resin molding was temporarily fixed directly above and below the semiconductor element. The obtained resin-sealed semiconductor device was evaluated in the same manner as in Example 6 . The evaluation results are shown in Table 3.

Comparative Example 5 A semiconductor device was manufactured by the same steps as in Reference Example 1 except that the uncured resin molded body was not temporarily fixed to the upper and lower sides of the semiconductor element but set in the mold. The obtained resin-sealed semiconductor device was evaluated in the same manner as in Example 6 . The evaluation results are shown in Table 3.

[0083]

[Table 3] As is clear from Table 3, the resin-encapsulated semiconductor devices obtained in Examples 6 to 11 were compared with the resin-encapsulated semiconductor devices obtained in Comparative Examples 4 and 5 during resin transfer and setting. There is no fall of the uncured resin molded body, and X
The amount of deformation (%) of the bonding wire was small by the radiography method, the cross-section observation of the wire was good, and no initial failure occurred. Furthermore, it had excellent reliability in the results of the humidity resistance reliability test (pressure cooker test) and the thermal cycle test.

Embodiment 12 FIG. 20 is a sectional view showing a manufacturing process of a bonding wire type resin-sealed semiconductor device in the third resin-sealed semiconductor device of the present invention.

Table 4 shows the compounding ratio and physical properties of the encapsulating resin composition. Also refer to the production of resin compositions for sealing.
The procedure was the same as in Example 1.

[0086]

[Table 4] First, the semiconductor element 5 is placed on the die pad 9 of the lead frame 8 via the mount agent layer 6, and the fixing resin molded body 12 made of uncured resin is placed on the bonding wire and the upper portion of the semiconductor element 5 (FIG. 20). (A)). Next, the uncured resin molded body is heated and cured so as to cover the surfaces of the bonding wire 10 and the semiconductor element 5 and fixed (FIG. 20 (b)). Then, the uncured encapsulating resin molding 1
Resin sealing was performed using the method of performing pressure sealing in the mold for the package QFP100pin package using and 2 to obtain a resin sealed semiconductor device (FIGS. 20C and 20D). The resin composition shown in Table 4 was used as the sealing resin composition used for the fixing resin molded body 12.
The obtained resin-sealed semiconductor device was evaluated in the same manner as in Example 6 . The evaluation results are shown in Table 5.

Embodiment 13 FIG. 21 is a sectional view showing a manufacturing process of a bump-connection type resin-sealed semiconductor device of an inner lead in a third resin-sealed semiconductor device of the present invention.

In this example, the lead 3 is connected to the semiconductor element 5 via the bump 4 as shown in FIG. A fixing resin molded body 12 made of an uncured resin is arranged on the leads and the semiconductor element, and the fixing resin molded body 12 is formed in the following Example 13.
A package was manufactured by the same method as described above. The obtained resin-sealed semiconductor device was evaluated in the same manner as in Example 6 . The evaluation results are shown in Table 5.

Example 14 Package A package was prepared in the same manner as in Example 12 except that the mold for the QFP 144pin package was used. The obtained resin-encapsulated semiconductor device was evaluated in the same manner as in Example 8. The evaluation results are shown in Table 5.

Comparative Example 6 A package was produced in the same manner as in Example 14 except that the fixing uncured resin molded body 12 was not used. The obtained resin-sealed semiconductor device was evaluated in the same manner as in Example 6 . The evaluation results are shown in Table 5.

Comparative Example 7 Example except that the uncured resin molding 12 for fixing was not used.
A package was prepared in the same manner as in 13 . The obtained resin-sealed semiconductor device was evaluated in the same manner as in Example 6 . The evaluation results are shown in Table 5.

Comparative Example 8 Example except that the uncured resin molding 12 for fixation was not used.
A package was manufactured by the same method as 14 . The obtained resin-sealed semiconductor device was evaluated in the same manner as in Example 6 . The evaluation results are shown in Table 5.

[0093]

[Table 5] As is clear from Table 5, the resin-encapsulated semiconductor devices obtained in Examples 12 to 14 were compared with the resin-encapsulated semiconductor devices obtained in Comparative Examples 6 to 8 by X-ray imaging. The cross-section observation and inner lead observation of the wire were also good, and no initial defects occurred. Furthermore, it had excellent reliability in the results of the humidity resistance reliability test (pressure cooker test) and the thermal cycle test.

[0094]

According to the first method for manufacturing a resin-sealed semiconductor device of the present invention and the resin-sealed semiconductor device obtained by this method, at least one surface of the semiconductor element is not in contact with the sealing resin composition. Since it has a hollow portion, a large force is applied to the connection portion in the sealing step, and the bonding wire does not come into contact with the element end portion or contact between adjacent wires. In addition, since the uncured resin molded body is melted and then cured while being pressed, water is not infiltrated from the lead interface, and highly resin-sealing can be performed. Furthermore, because the uncured resin melts and cures in a good state, the mechanical strength of the resulting package is high, the area occupied by semiconductor elements is large relative to the package, and the thickness of the package is less than 1 mm. Even in this case, sealing can be performed without damage by the sealing resin during molding. As a result, it is possible to eliminate element defects of the resin-encapsulated semiconductor device and significantly improve reliability.

The second method for manufacturing a resin-sealed semiconductor device of the present invention and the resin-sealed semiconductor device obtained by this method are provided with a temporary fixing portion for temporarily fixing the uncured resin molded body on the external lead structure. As a result, the sealing resin molded body does not drop during transportation. In addition, there is no heating process of the sealing resin, and only the heating history at the time of manufacturing the molded body is required, the increase in viscosity due to the reaction of the sealing resin is suppressed, and the deformation of the bonding wire can be reduced. as a result,
The reliability of the resin-encapsulated semiconductor device can be greatly improved by eliminating element defects. Further, since the net-like structure that is not deformed by the flow of the sealing resin is provided in at least one part of the external lead structure, in addition to the above-mentioned effect, even if a large force is applied to the connection portion in the sealing process, the bonding wire Does not come into contact with the end portion of the semiconductor element or contact between adjacent wires.

A third method for manufacturing a resin-sealed semiconductor device of the present invention and a resin-sealed semiconductor device obtained by this method are such that a thin uncured resin molded body is previously arranged on a bonding wire or an inner lead, After curing and fixing, the encapsulating resin molded body made of uncured resin is cured while being pressed against the semiconductor element, so that a large force is applied to the connection part in the encapsulation process, and the bonding wire or inner lead is applied to the semiconductor element end part. It is possible to prevent contact between adjacent bonding wires and peeling or cutting of the inner leads, thereby eliminating element defects of the resin-encapsulated semiconductor device and greatly improving reliability. In addition, the first to third resin-encapsulated semiconductor devices of the present invention can be automated by the in-line encapsulation process, and can be sufficiently adapted to small-quantity multi-product production.

[Brief description of drawings]

FIG. 1 is a diagram showing a method for manufacturing a concave resin molded body of Example 1.

FIG. 2 is a diagram illustrating a method for manufacturing a concave resin molded body of Example 2.

FIG. 3 is a cross-sectional view showing a manufacturing process of a resin-sealed semiconductor device having a structure in which a semiconductor element 5 in which external leads are connected via bumps is sealed.

FIG. 4 is a cross-sectional view showing a manufacturing process of a resin-sealed semiconductor device of Example 2.

FIG. 5 is a cross-sectional view showing the manufacturing process of the resin-sealed semiconductor device of Example 3;

FIG. 6 is a cross-sectional view showing another manufacturing process of the resin-sealed semiconductor device of the third embodiment.

FIG. 7 is a cross-sectional view showing the manufacturing process of the resin-sealed semiconductor device of Example 4.

FIG. 8 is a cross-sectional view showing a manufacturing process of a resin-sealed semiconductor device of Example 5;

FIG. 9 is a cross-sectional view showing the manufacturing process of the resin-sealed semiconductor device of the sixth embodiment.

FIG. 10 is a cross-sectional view showing the manufacturing process of the resin-sealed semiconductor device of Example 7.

FIG. 11 is a cross-sectional view showing the manufacturing process of the resin-sealed semiconductor device of Example 8.

FIG. 12 is a cross-sectional view showing the manufacturing process of the resin-sealed semiconductor device of Example 9.

FIG. 13 is a cross-sectional view showing the manufacturing process of the resin-sealed semiconductor device of Example 10.

FIG. 14 is a cross-sectional view showing the manufacturing process of the resin-sealed semiconductor device of Example 11.

FIG. 15 is a cross-sectional view showing the manufacturing process of the resin-sealed semiconductor device of Example 12;

16 is a plan view of a lead frame of a resin-sealed semiconductor device of Example 8. FIG.

FIG. 17 is a diagram showing a method of manufacturing a temporary fixing portion and a hanging pin portion.

FIG. 18 is a cross-sectional view showing the manufacturing process of the resin-sealed semiconductor device of Example 13;

FIG. 19 is a plan view of a mesh structure.

FIG. 20 is a cross-sectional view showing the manufacturing process of the resin-sealed semiconductor device of the fourteenth embodiment.

FIG. 21 is a cross-sectional view showing the manufacturing process of the resin-sealed semiconductor device of Example 15.

FIG. 22 is a conceptual diagram of a manufacturing apparatus.

FIG. 23 is a cross-sectional view showing a manufacturing process of a conventional resin-sealed semiconductor device.

FIG. 24 is another cross-sectional view showing the manufacturing process of the conventional resin-encapsulated semiconductor device.

[Explanation of symbols]

1, 2 ... Encapsulating resin molding, 3 ... Lead, 4 ... Bump, 5 ... Semiconductor element, 6 ... Mounting agent layer, 7 ...
Film carrier, 8 ... Lead frame, 9 ... Die pad, 10 ... Bonding wire, 11 ... Lead for fixing uncured resin, 12 ... Molded resin for fixing, 13
...... Reticulated structure, 30 ...... Folding pin, 40 ...... Polyimide tape, 100a …… Supply reel, 100b …… Winding reel, 200 …… Semiconductor element heating tank, 300 …… Temporary fixing part, 400 …… Press Molding part, 500a ... upper mold, 500b ... lower mold.

Continuation of the front page (72) Inventor Akira Zensaku 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki-shi, Kanagawa Toshiba Research and Development Center Co., Ltd. (56) Reference JP-A-5-291322 (JP, A) (58) Survey Selected fields (Int.Cl. ⁷ , DB name) H01L 23/00-23/10 H01L 23/28-23/30 H01L 21/56

Claims (4)

(57) [Claims] 1. A step of molding a concave resin molding for sealing and a step of removing the molded concave resin molding for sealing from the edge portion.
Placing on at least one surface of a semiconductor element part is read and the counter, the semiconductor a concave resin molded body for the sealing
A method for manufacturing a resin-encapsulated semiconductor device, which comprises a step of curing while applying pressure to an external lead of an element , wherein the step of molding the encapsulating concave-type resin molded body comprises a heated concave die. the outer peripheral surface by heating the sealing resin molded body inner is
A method of manufacturing a resin-encapsulated semiconductor device, comprising the step of molding a concave resin molded body made of a cured resin and having at least a sealing surface made of an uncured resin . 2. A resin-encapsulated semiconductor device in which a semiconductor element is encapsulated with an encapsulating resin composition, the external lead structure being electrically connected to the semiconductor element via an internal lead structure. The body is made of a resin composition for encapsulation, and a resin molding for encapsulation is separated from the internal lead structure.
Tacking temporarily fixed portion resin-sealed semiconductor device characterized by having a Te. 3. A semiconductor element, the semiconductor element and an internal lead.
And <br/> external lead structure having temporary fixing portions, which are electrically connected via the de structure, and the is spaced from the inner lead structure in the temporary fixing portions provided on the external lead structure on A method of manufacturing a resin-sealed semiconductor device, comprising: a step of disposing an uncured resin molded body; and a step of resin-sealing a semiconductor element by curing the uncured resin molded body while applying pressure. . 4. A step of disposing an uncured resin molded body on a semiconductor element, an inner lead structure and an outer lead structure electrically connected to the semiconductor element, and pressing the uncured resin molded body. A method of manufacturing a resin-encapsulated semiconductor device comprising a step of resin-encapsulating the semiconductor element by curing while the step of disposing the uncured resin molded body is the semiconductor element, the semiconductor element and A method for manufacturing a resin-encapsulated semiconductor device, characterized in that at least one of an external lead structure and an internal lead structure electrically connected to each other is cured with a curing resin, and then the uncured resin molded body is arranged. .